Nanoelectromechanical device and manufacturing method thereof

Abstract

The present invention relates to a nanoelectromechanical device and a manufacturing method thereof, the device comprising: a first electrode formed on the upper part of a metal wiring layer; a second electrode spaced apart from the first electrode and disposed to be parallel to the first electrode; a movable beam disposed between the first electrode and the second electrode and moving horizontally to come into contact with the first electrode or the second electrode; and a via anchor connected to an upper portion and a lower portion of one side of the movable beam to support the movable beam. Accordingly, the present invention can improve the durability of the device, can operate even at a low driving voltage, and can improve the degree of integration.

Description

Nano-electromechanical devices and their manufacturing methods

[0001] The present invention relates to a nano-electromechanical device and a method for manufacturing the same, and more particularly, to a nano-electromechanical device having a structure in which the upper and lower portions of one end of a movable beam are fixed to a via anchor, and a method for manufacturing the same.

[0002]

[0003] The market demand for ultra-low-power, high-density memory has been growing exponentially. However, existing memory devices are implemented using Complementary Metal-Oxide-Semiconductor (CMOS) process technology, which results in area loss, performance degradation, and low yields. To overcome these issues, various low-power, high-energy-efficiency memory devices are being researched. In particular, active research is being conducted on nano-electromechanical devices, which are integrated into the metal wiring layers on top of ICs rather than conventional semiconductor devices.

[0004] Despite their superior electrical performance, these nano-electromechanical devices suffer from poor switching cycle endurance, severely limiting their applications. Existing nano-electromechanical devices exhibit a rapid increase in operating voltage with repeated switching cycles. This is due to excessive stress concentrated on the anchor portion of the movable beam, which accumulates material fatigue and softens the material, weakening its resilience. Repeated occurrences of this phenomenon can lead to mechanical failures, such as breakage of the movable beam. Therefore, existing nano-electromechanical devices require solutions that can improve durability and suppress increases in operating voltage.

[0005]

[0006] [Prior Art Literature]

[0007] [Patent Document]

[0008] Korean Patent No. 10-1383760 (April 3, 2014)

[0009]

[0010] One embodiment of the present invention proposes a nano electromechanical device that can be implemented with a simple process and low cost as an ultra-low power non-volatile memory device that can be integrated three-dimensionally on an existing semiconductor chip, and that can be implemented in a smaller area while improving device durability through an improved structure.

[0011] One embodiment of the present invention proposes a nano-electromechanical device capable of maximizing the advantages of low-power non-volatile memory characteristics by operating at a lower operating voltage than conventional devices.

[0012] One embodiment of the present invention proposes a nano-electromechanical device having a via anchor structure using mechanical torsion and a manufacturing process thereof.

[0013]

[0014] Among the embodiments, the nano-electromechanical device includes a first electrode formed on an upper portion of a metal wiring layer; a second electrode spaced apart from and arranged in parallel with the first electrode; a movable beam arranged between the first electrode and the second electrode and moving horizontally to contact the first electrode or the second electrode; and a via anchor connected to the upper and lower portions of one side of the movable beam to support the movable beam.

[0015] The above via anchor may include a lower via anchor connected to a lower side of the movable beam; and an upper via anchor connected to an upper side of the movable beam and positioned perpendicular to the lower via anchor.

[0016] The above lower via anchor may be formed by embedding a conductive material in a lower via anchor support formed of a first insulating film and formed in a first via anchor region defined at the lower portion of the semiconductor structure.

[0017] The upper via anchor may be formed by embedding a conductive material in an upper via anchor support formed of a second insulating film and formed in a second via anchor region defined on the upper side of the semiconductor structure.

[0018] The above-mentioned movable beam can be moved toward the first electrode or the second electrode and connected to the corresponding electrode by an electromagnetic force applied between the electrodes when a positive voltage is applied to the first electrode or the second electrode.

[0019] The above via anchor can rotate at a certain angle in the direction when the movable beam is pulled in the direction of the first electrode or the second electrode.

[0020] The above via anchor is capable of rotation (torsion) and can support horizontal movement of the movable beam through the rotation.

[0021] Among the embodiments, the nano-electromechanical device can be configured such that the deformation occurring in the movable beam during the operation of the movable beam can be distributed to the via anchor as the torsion.

[0022] Among the examples, the nano electromechanical device is characterized by a linear spring constant (K) of the movable beam when the structure of the via anchor is replaced with a spring model. beam ) and the spring constant (K) derived from the torsional stiffness of the via anchor. via ') can have a serial structure.

[0023] Among the embodiments, a method for manufacturing a nano electromechanical device includes the steps of forming a first insulating film on an upper portion of a semiconductor structure; etching the first insulating film and filling a conductive material to form a lower via anchor and a movable beam; forming a second insulating film on the entire upper portion; and etching the second insulating film and filling a conductive material to form an upper via anchor.

[0024] The step of forming the lower via anchor and the movable beam may include a step of etching the first insulating film to form a lower via anchor region so that the lower metal wiring included in the semiconductor structure is exposed.

[0025] The step of forming the lower via anchor and the movable beam may include a step of etching the first insulating film to form a movable beam region extending in the same direction as the lower metal wiring from above the lower via anchor region.

[0026] The step of forming the lower via anchor and the movable beam may include the step of embedding and planarizing a conductive material in the lower via anchor region and the movable beam region.

[0027] The step of forming the upper via anchor may include a step of etching the second insulating film to form the upper via anchor in a vertical line with the lower via anchor.

[0028] The step of forming the upper via anchor may include a step of etching the second insulating film to form an upper metal wiring region on top of the upper via anchor region, and a step of filling and planarizing a conductive material in the upper via anchor region and the upper metal wiring region.

[0029] Among the embodiments, the method for manufacturing a nano electromechanical device may further include a step of etching the first insulating film and the second insulating film to expose a side surface of the lower via anchor and an upper portion of the movable beam, thereby forming an air gap around the movable beam.

[0030] Among the embodiments, a method for manufacturing a nano-electromechanical device includes the steps of forming a lower metal wiring on an upper portion of a semiconductor structure, and forming a first insulating film over the entire upper portion including the lower metal wiring; etching the first insulating film to form a first via anchor region and a movable beam region; burying a conductive material in the first via anchor region and the movable beam region to form a lower via anchor and a movable beam; forming a second insulating film over the entire upper portion, and etching the second insulating film to form a second via anchor region and an upper metal wiring region; burying a conductive material in the second via anchor region and the upper metal wiring region to form an upper via anchor and an upper metal wiring; and etching the first insulating film and the second insulating film adjacent to the movable beam to form an air gap of a predetermined distance around the movable beam.

[0031] The semiconductor structure may include a plurality of metal wirings.

[0032] The above lower via anchor and upper via anchor can be formed in a vertical line.

[0033] The lower via anchor and the upper via anchor can be formed to be in contact with one side of the movable beam.

[0034]

[0035] The disclosed technology may have the following effects. However, this does not mean that a particular embodiment must include all or only the following effects, and thus the scope of the disclosed technology should not be construed as being limited thereby.

[0036] A nano-electromechanical device and a manufacturing method according to one embodiment of the present invention can obtain an effect of improving device durability by distributing stress due to deformation borne by a movable beam anchor part of a T-shaped structure using the torsion of upper and lower via anchors.

[0037] Additionally, the torsion of the via anchor helps the movement of the movable beam, enabling operation at lower operating voltages, and reduces the length of the movable beam, providing the effect of enabling the fabrication of smaller nano-electromechanical devices.

[0038] In addition, by replacing the area of ​​the movable beam anchor portion of the T-shaped structure with upper and lower via anchors, it is advantageous to vertically integrate each metal layer, and the effect of increasing the device integration can be obtained.

[0039]

[0040] FIG. 1 is a drawing illustrating a nano-electromechanical device according to one embodiment of the present invention.

[0041] FIGS. 2A-2E are diagrams illustrating a method for manufacturing a nano-electromechanical device according to one embodiment of the present invention.

[0042] FIG. 3 is a drawing showing the operation of a nano-electromechanical device according to one embodiment of the present invention.

[0043] FIG. 4 is a drawing showing the degree of stress applied to an anchor portion of a nano-electromechanical device according to one embodiment of the present invention.

[0044] FIG. 5 is a drawing for explaining linear spring modeling of a nano electromechanical device according to one embodiment of the present invention.

[0045] FIG. 6 is a drawing for explaining the effect of a via anchor of a nano electromechanical device according to one embodiment of the present invention on a movable beam.

[0046] FIG. 7 is a drawing for explaining the state of a nano-electromechanical device according to one embodiment of the present invention.

[0047]

[0048] The description of the present invention is merely an example for structural and functional explanation, and therefore, the scope of the present invention should not be construed as being limited by the embodiments described in the text. That is, since the embodiments can be modified in various ways and can take various forms, the scope of the present invention should be understood to include equivalents that can realize the technical idea. In addition, the purposes or effects presented in the present invention do not mean that a specific embodiment must include all of them or only such effects, and therefore, the scope of the present invention should not be construed as being limited thereby.

[0049] Meanwhile, the meaning of the terms described in this application should be understood as follows.

[0050] Terms such as "first" and "second" are intended to distinguish one component from another, and the scope of the rights should not be limited by these terms. For example, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

[0051] When a component is said to be "connected" to another component, it should be understood that while it may be directly connected to that other component, there may also be other components intervening. Conversely, when a component is said to be "directly connected" to another component, it should be understood that there are no other intervening components. Similarly, other expressions describing relationships between components, such as "between" and "directly between," or "adjacent to" and "directly adjacent to," should be interpreted similarly.

[0052] Singular expressions should be understood to include plural expressions unless the context clearly indicates otherwise, and terms such as "comprises" or "have" should be understood to specify the presence of a feature, number, step, operation, component, part or combination thereof, but not to exclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

[0053] For each step, the identifiers (e.g., a, b, c, etc.) are used for convenience of explanation and do not describe the order of the steps. The steps may occur in a different order than stated unless the context clearly dictates a specific order. That is, the steps may occur in the same order as stated, may be performed substantially simultaneously, or may be performed in the opposite order.

[0054] Unless otherwise defined, all terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted to be consistent with their meaning within the context of the relevant technology, and should not be interpreted as having an idealized or overly formal meaning unless explicitly defined herein.

[0055] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached drawings. Identical components in the drawings are designated by the same reference numerals, and redundant descriptions of identical components will be omitted.

[0056]

[0057] Typically, nano-electromechanical devices have three states: initial, state 1, and state 2. First, when the movable beam is not attached to any electrode, it is the initial state. When it is attached to the first electrode (L1), it is state 1. When it is attached to the second electrode (L2), it is state 2. This acts as a non-volatile memory that stores each state using the principle of mechanical movement. The stored state is determined by the position of the movable beam of the nano-electromechanical memory switch. In the initial state, the movable beam does not contact the first electrode (L1) or the second electrode (L2). Then, a positive voltage (V L1 or V L2 ) is applied to the first electrode (L1) or the second electrode (L2), the movable beam moves toward the first electrode (L1) or the second electrode (L2) by the electromagnetic force applied between the metal electrodes and is connected to the electrode. The connected movable beam and the electrode maintain and store the state semi-permanently without an additional external force by the attractive force acting on the surface of the contacting material, such as the van der Waals attractive force. Through this non-volatility, the electromechanical memory device can achieve ultra-low power memory characteristics.

[0058]

[0059] FIG. 1 is a drawing illustrating a nano-electromechanical device according to one embodiment of the present invention, wherein FIG. 1(a) is a perspective view, FIG. 1(b) is a cross-sectional view illustrating a cross-section along line A-A', and FIG. 1(c) is a cross-sectional view illustrating a cross-section along line B-B'.

[0060] Referring to FIG. 1, the nano-electromechanical device may include a first electrode (L1) and a second electrode (L2), a movable beam (110), and a via anchor (120).

[0061] The first electrode (L1) is formed on top of the metal wiring layer. The second electrode (L2) is spaced apart from and arranged parallel to the first electrode (L1).

[0062] The first electrode (L1) and the second electrode (L2) are respectively connected to the lower metal wirings (130) through a number of vias. The first electrode (L1) and the second electrode (L2) are arranged in parallel and spaced apart from each other by a certain distance.

[0063] The movable beam (110) is arranged between the first electrode (L1) and the second electrode (L2) and moves horizontally to contact the first electrode (L1) or the second electrode (L2). One end of the movable beam (110) is fixed by a via anchor (120) and connected to the lower metal wiring (130) and the upper metal wiring (140). By horizontally moving the movable beam (110) fixed by the via anchor (120), it can contact the first electrode (L1) or the second electrode (L2) and change to the first state (state 1) or the second state (state 2), respectively. When a positive voltage is applied to the first electrode (L1) or the second electrode (L2), the movable beam (110) can move toward the first electrode (L1) or the second electrode (L2) by an electromagnetic force applied between the electrodes and be connected to the corresponding electrode.

[0064] The movable beam (110) may be extended in the same direction as the lower metal wiring (130) and may be extended in a direction perpendicular to and intersecting with the upper metal wiring (140). Here, the lower metal wiring (130) and the upper metal wiring (140) may be formed through the same process as the CMOS metal wiring.

[0065] A via anchor (120) is connected to the upper and lower portions of one side of a movable beam (110) to support the movable beam (110). The via anchor (120) may include a lower via anchor (120a) connected to the lower portion of one side of the movable beam (110) and an upper via anchor (120b) connected to the upper portion of one side of the movable beam (110). Here, the upper via anchor (120b) may be arranged in a vertical line so as to overlap with the lower via anchor (120a), but is not necessarily limited thereto and may be formed in a form in which it partially overlaps or does not overlap with the lower via anchor (120a).

[0066] The lower via anchor (120a) may be formed in a first via anchor region defined at the bottom of the semiconductor structure and may be formed by embedding a conductive material in a lower via anchor support formed of a first insulating film. In addition, the upper via anchor (120b) may be formed in a second via anchor region defined at the top of the semiconductor structure and may be formed by embedding a conductive material in an upper via anchor support formed of a second insulating film.

[0067] The via anchor (120) can rotate at a certain angle along the direction of movement of the movable beam (110), and at this time, the degrees of rotation of the lower via anchor (120a) and the upper via anchor (120b) may be different. The via anchor (120) can rotate at a certain angle in the direction of the pull-in operation in which the movable beam (110) moves toward the first electrode (L1) or the second electrode (L2). The via anchor (120) can rotate (torsion) and support the horizontal movement of the movable beam (110) through the rotation.

[0068]

[0069] FIGS. 2A to 2E are cross-sectional views illustrating a method for manufacturing a nano-electromechanical device according to one embodiment of the present invention.

[0070] First, referring to FIG. 2A, a lower metal wiring (210) is formed on the upper portion of a semiconductor structure (200), and a first insulating film (220) is formed on the entire upper portion including the lower metal wiring (210). At this time, the semiconductor structure (200) may include a plurality of metal wirings, etc. Thereafter, the first insulating film (220) is etched to form a first via anchor region and a movable beam region. At this time, the lower metal wiring (210) is exposed by the first via anchor region. Here, the first via anchor region may correspond to the lower via anchor region. The movable beam region may be formed in a form extending in the same direction as the lower metal wiring (210) from the upper portion of the lower via anchor region.

[0071] Then, referring to FIG. 2b, a conductive material is embedded in the first via anchor region and the movable beam region, and a planarization process is performed until the first insulating film (220) is exposed to form a lower via anchor (230) and a movable beam (240).

[0072] Then, referring to FIG. 2c, a second insulating film (250) is formed over the entire upper portion, and the second insulating film (250) is etched to form a second via anchor region and an upper metal wiring region. At this time, the second via anchor region is formed to be positioned perpendicular to the lower via anchor (230). Here, the second via anchor region may correspond to the upper via anchor region. The upper metal wiring region may be formed on the upper portion of the upper via anchor region.

[0073] Then, referring to FIG. 2d, a conductive material is embedded in the second via anchor region and the upper metal wiring region formed by etching the second insulating film (250), and a planarization process is performed until the second insulating film (250) is exposed. Through this process, an upper via anchor (260) and an upper metal wiring (270) are formed.

[0074] Then, referring to FIG. 2e, the first insulating film (220) and the second insulating film (250) are etched so that an air gap of a certain interval is formed around the movable beam (240). This is to secure an air gap around the movable beam (240) so that the movable beam (240) can operate. At this time, it is preferable that the second insulating film (250) is etched so that the top of the movable beam (240) is exposed, and the first insulating film (220) is etched so that the side of the lower via anchor (230) is exposed.

[0075]

[0076] FIG. 3 is a drawing illustrating the operation of a nano-electromechanical device according to one embodiment of the present invention.

[0077] Referring to Fig. 3, the operating appearances of a T-shaped nano-electromechanical device (a) and a via-anchor structured nano-electromechanical device (b) are compared as follows.

[0078] First, the T-shaped nano-electromechanical element (a) experiences an increase in operating voltage as the switching cycle is repeated, which places excessive stress on the anchor portion (A) of the movable beam, accumulating material fatigue, and thus softening, which may weaken the restoring force. In addition, mechanical defects, such as the movable beam breaking, may occur.

[0079] In contrast, the nano-electromechanical device (b) with a via-anchor structure can improve durability compared to a T-shaped device because the deformation occurring in the movable beam during operation is distributed to the upper and lower via anchors as a torsion, as in 'B'. In addition, since the torsion of the via anchor helps the horizontal movement of the movable beam, even if the length of the movable beam is shortened, the increase in driving voltage is reduced, making it possible to manufacture a nano-electromechanical device with a smaller size and lower driving voltage.

[0080]

[0081] FIG. 4 is a drawing showing the degree of stress applied to an anchor portion of a nano electromechanical device according to one embodiment of the present invention, and shows the results of FEA (Finite Element Analysis).

[0082] Referring to Fig. 4, the stress applied to the anchor portion of the movable beam of a nano electromechanical element with a T-shaped structure (a) and a nano electromechanical element with a via anchor structure (b) can be compared.

[0083] Referring to the FEA simulation results of Fig. 4, it can be seen that the stress that was concentrated in the anchor portion of the movable beam (400) in the T-shaped structure is distributed to the upper via anchor (410a) and the lower via anchor (410b). Numerically, a stress reduction of up to 40 to 45% can be confirmed.

[0084]

[0085] FIG. 5 is a drawing for explaining linear spring modeling of a nano electromechanical device according to one embodiment of the present invention, and FIG. 6 is a drawing for explaining the influence of the torsion of a via anchor of a nano electromechanical device according to one embodiment of the present invention on a movable beam.

[0086] Referring to Fig. 5, the via anchor structure can be replaced with a simple spring model as in Fig. 5. Here, K beam is the linear spring constant, and K via represents the torsional stiffness. That is, for linear spring modeling as in Fig. 5, K via The spring constant K via' should be converted to spring constant K via' and linear spring constant K beam can be obtained through <Mathematical Formula 1> and <Mathematical Formula 2> below, respectively.

[0087] <Mathematical Formula 1>

[0088]

[0089] <Mathematical Formula 2>

[0090]

[0091] Torque (T) is the product of torsion (θ) and torsional stiffness, and the product of applied force (F) and the distance (r) from the point of force to the axis of rotation. Therefore, by calculating F using the two equations for torque, it can be defined as in the mathematical equation <Mathematical equation 3> below.

[0092] <Mathematical Formula 3>

[0093] F=(K via ·θ) / r, F=K via' ·Δg

[0094] Therefore, through the two equations of F, <Equation 3>, K via' can be obtained. At this time, the torsional hardness (K) of the via modeled as a cylinder via ) is defined as the product of shear modulus (G) and rotational inertia (J) divided by the height of the cylinder (h), and as shown in Fig. 6, the angle (torsion, θ) due to the twisting of the via is very small, so Δg = L beam ·It can be assumed as θ.

[0095] Therefore, as in the model of <Mathematical Formula 1>, K via' This derived result can be obtained. As can be seen from the linear spring model, in the T-shaped element structure, K beam If only the springs were to bear the stress, in the via anchor structure, K is placed in series via' A spring is added and the force is distributed between the two springs, K beam The effect of stress distribution can be achieved.

[0096] And, referring to FIG. 6, when the nano electromechanical device of the via anchor structure operates, the torsion of the via anchor is applied simultaneously with the movement of the movable beam, so unlike the T-shaped structure that only depends on the deformation of the movable beam, the distance between the movable beam and the electrode is reduced by Δg due to the influence of the torsion.

[0097] Therefore, even at the same voltage, a stronger electrostatic force is applied, enabling operation with a lower driving voltage (Vp). Here, the driving voltage (Vp) can be obtained through the following <Mathematical Formula 4>.

[0098] <Mathematical Formula 4>

[0099] (g 0'= g0- Δg)

[0100] FEA simulation results show that, under identical conditions, nano-electromechanical devices with via-anchor structures can operate with a 10-20% reduced operating voltage compared to T-type devices. Therefore, by reducing the length of the movable beam, it is possible to reduce the size of a single device while simultaneously fabricating nano-electromechanical devices with lower or equal operating voltages.

[0101]

[0102] FIG. 7 is a drawing for explaining the state of a nano-electromechanical device according to one embodiment of the present invention.

[0103] Referring to FIG. 7, the movable beam (700) maintains an initial state (FIG. 7(b)) in which it does not contact the first electrode (L1) or the second electrode (L2), and in the initial state, a positive voltage (V L1 or V L2 ) is applied to the first electrode (L1) or the second electrode (L2), the movable beam (700) can be moved toward state 1, which is the first electrode (L1), or state 2, which is the second electrode (L2) by the electromagnetic force generated between the metals, and can be changed to a state connected to the corresponding electrode (Fig. 7(a), Fig. 7(c)).

[0104] The operating principle of these nano-electromechanical devices is that each electrode and the movable beam are connected by an adhesive force between the connected areas, and the stored state is maintained even when the voltage supply is cut off, showing non-volatile characteristics.

[0105] In the case of applying a nano electromechanical element of a via anchor structure as in one embodiment of the present invention to an array such as an associative memory, compared to forming a matchline by connecting the same metal layer when connecting the anchors of a 1x8 array in a T-shaped structure, in the via anchor structure, the nano electromechanical element is vertically integrated in each layer of M1 to M8, and then the via to be connected is set as a matchline, making it easy to manufacture an array with a significantly reduced space. This has the effect of greatly enhancing the high integration characteristic, which is the strength of the nano electromechanical element.

[0106]

[0107] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below.

[0108]

[0109] [Explanation of symbols]

[0110] 110,240,400,700: Movable beam 120: Via anchor

[0111] 120a,230,410b: Lower via anchor 120b,260,410a: Upper via anchor

[0112] 130,210: Lower metal wiring 140,270: Upper metal wiring

[0113] 200: Semiconductor structures

[0114] 220: First insulating film 250: Second insulating film

Claims

1. A first electrode formed on the upper part of the metal wiring layer; A second electrode arranged parallel to and spaced apart from the first electrode; A movable beam disposed between the first electrode and the second electrode and moving horizontally to contact the first electrode or the second electrode; and A nano-electromechanical device comprising via anchors connected to the upper and lower sides of the movable beam to support the movable beam.

2. In the first paragraph, the via anchor A lower via anchor connected to the lower side of the above-mentioned movable beam; and A nano-electromechanical device characterized by comprising an upper via anchor connected to one upper side of the above-described movable beam and arranged in a vertical line with the lower via anchor.

3. In the second paragraph, the lower via anchor A nano-electromechanical device characterized in that it is formed by embedding a conductive material in a lower via anchor support formed of a first insulating film and formed in a first via anchor region defined at the lower part of a semiconductor structure.

4. In the third paragraph, the upper via anchor A nano-electromechanical device characterized in that it is formed by embedding a conductive material in an upper via anchor support formed of a second insulating film and formed in a second via anchor region defined on the upper portion of the semiconductor structure.

5. In paragraph 1, the movable beam A nano-electromechanical device characterized in that when a positive voltage is applied to the first electrode or the second electrode, the nano-electromechanical device moves toward the first electrode or the second electrode and is connected to the corresponding electrode by an electromagnetic force applied between the electrodes.

6. In the fifth paragraph, the via anchor A nano-electromechanical device characterized in that the above-mentioned movable beam rotates at a certain angle in the direction of the first electrode or the second electrode during a pull-in operation.

7. In the first paragraph, the via anchor A nano-electromechanical device characterized in that it is capable of rotation (torsion) and supports horizontal movement of the movable beam through said rotation.

8. In paragraph 7, A nano-electromechanical device characterized in that the deformation occurring in the movable beam when the movable beam is operated is distributed to the via anchor as the rotation (torsion).

9. In paragraph 1, When the structure of the above via anchor is replaced with a spring model, the linear spring constant (K) of the movable beam beam ) and the spring constant (K) derived from the torsional stiffness of the via anchor. via A nano-electromechanical device characterized by having a serial structure of ').

10. A step of forming a first insulating film on top of a semiconductor structure; A step of etching the first insulating film and filling a conductive material to form a lower via anchor and a movable beam; A step of forming a second insulating film over the entire upper portion; and A method for manufacturing a nano electromechanical device, comprising the step of etching the second insulating film and filling a conductive material to form an upper via anchor.

11. In the 10th paragraph, the step of forming the lower via anchor and the movable beam A method for manufacturing a nano-electromechanical device, characterized by comprising a step of etching the first insulating film to form a lower via anchor region so as to expose a lower metal wiring included in the semiconductor structure.

12. In the 11th paragraph, the step of forming the lower via anchor and the movable beam A method for manufacturing a nano-electromechanical element, characterized by comprising the step of etching the first insulating film to form a movable beam region extending in the same direction as the lower metal wiring from above the lower via anchor region.

13. In the 12th paragraph, the step of forming the lower via anchor and the movable beam is A method for manufacturing a nano-electromechanical device, characterized by comprising the steps of embedding and planarizing a conductive material in the lower via anchor region and the movable beam region.

14. In the 10th paragraph, the step of forming the upper via anchor is A method for manufacturing a nano electromechanical device, characterized by comprising a step of etching the second insulating film to form an upper via anchor region in a vertical line with the lower via anchor.

15. In the 14th paragraph, the step of forming the upper via anchor is A method for manufacturing a nano-electromechanical device, characterized by comprising the steps of etching the second insulating film to form an upper metal wiring region on the upper side of the upper via anchor region, and burying and planarizing a conductive material in the upper via anchor region and the upper metal wiring region.

16. In paragraph 10, A method for manufacturing a nano-electromechanical device, characterized in that it further comprises the step of etching the first insulating film and the second insulating film to expose the side surface of the lower via anchor and the upper surface of the movable beam, thereby forming an air gap around the movable beam.

17. A step of forming a lower metal wiring on an upper portion of a semiconductor structure and forming a first insulating film on the entire upper portion including the lower metal wiring; A step of etching the first insulating film to form a first via anchor region and a movable beam region; A step of forming a lower via anchor and a movable beam by embedding a conductive material in the first via anchor region and the movable beam region; A step of forming a second insulating film over the entire upper portion and etching the second insulating film to form a second via anchor region and an upper metal wiring region; A step of forming an upper via anchor and an upper metal wiring by embedding a conductive material in the second via anchor region and the upper metal wiring region; and A method for manufacturing a nano-electromechanical element, comprising the step of etching a first insulating film and a second insulating film adjacent to the movable beam to form an air gap of a predetermined interval around the movable beam.

18. In the 17th paragraph, the semiconductor structure A method for manufacturing a nano-electromechanical device, characterized by including a plurality of metal wirings.

19. In the 17th paragraph, the lower via anchor and the upper via anchor A method for manufacturing a nano-electromechanical device, characterized in that it is formed in a vertical line.

20. In paragraph 17, the lower via anchor and the upper via anchor A method for manufacturing a nano-electromechanical element, characterized in that it is formed so as to be in contact with one side of the above-mentioned movable beam.

Images