Crystal processing method and system

Abstract

Embodiments of the present description provide a crystal processing method and system. The method comprises: acquiring a target light yield and / or a target light output value of a crystal to be processed; determining a light output surface and a non-light output surface of said crystal; on the basis of the target light yield and / or the target light output value, determining a first surface parameter of the light output surface and a second surface parameter of the non-light output surface; and processing said crystal on the basis of the first surface parameter and the second surface parameter.

Description

Crystal processing method and system Technical Field

[0001] This specification relates to the field of crystal processing, and in particular to a crystal processing method and system. Background Art

[0002] Scintillator crystals are crystals that, when struck by high-energy particles such as X-rays, convert the kinetic energy of these particles into light energy, emitting a flash of light. They are widely used in nuclear medicine imaging, such as X-ray tomography (XCT) and positron emission tomography (PET), nuclear detection technologies, such as industrial computed tomography (CT), oil well exploration, nuclear physics, high-energy physics, environmental monitoring, safety testing, and weapon fire control and guidance. In high-energy physics and nuclear medicine imaging, scintillator crystals are required to exhibit high light yield, strong R-ray absorption, short luminescence decay time, high irradiation hardness, density, and atomic number. However, due to the large atomic radius of most scintillator crystals and the significant variation in atomic radius among different elements in the crystal, the segregation coefficient (K) of some elements in the crystal is low (e.g., far less than 1). This results in large variations in element doping concentrations between the head and tail of the crystal, further leading to variations in light output across the crystal, significantly impacting the uniformity of the crystal's scintillation performance.

[0003] Because it's difficult to achieve perfect consistency in the crystal growth process, growth environment, volatility, and temperature field, it's difficult to guarantee crystal uniformity and meet the demand for consistent light output from the crystal. Furthermore, due to temperature gradients during crystal growth, thermal stress in the crystal is high, and cracking is common during traditional processing.

[0004] Therefore, it is necessary to provide a crystal processing method and system to reduce the crystal cracking rate and improve the consistency of light output, meet the requirements for crystal performance and processing, and reduce production costs.

[0005] Summary of the Invention

[0006] One or more embodiments of the present disclosure provide a crystal processing method. The method includes: obtaining a target light yield and / or a target light output value of a crystal to be processed; determining a light output surface and a non-light output surface of the crystal to be processed; determining a first surface parameter of the light output surface and a second surface parameter of the non-light output surface based on the target light yield and / or the target light output value; and processing the crystal to be processed based on the first surface parameter and the second surface parameter.

[0007] One or more embodiments of the present disclosure provide a crystal processing system. The system includes: an input module configured to obtain a target light yield and / or a target light output value of a crystal to be processed; a determination module configured to determine a light output surface and a non-light output surface of the crystal to be processed; a processing module configured to determine a first surface parameter of the light output surface and a second surface parameter of the non-light output surface based on the target light yield and / or the target light output value; and a processing module configured to process the crystal to be processed based on the first surface parameter and the second surface parameter.

[0008] One or more embodiments of the present specification also provide a crystal processing system. The system includes: a control host and a processing device, wherein the control host is configured to: obtain a target light yield and / or a target light output value of a crystal to be processed; determine a light output surface and a non-light output surface of the crystal to be processed; determine a first surface parameter of the light output surface and a second surface parameter of the non-light output surface based on the target light yield and / or the target light output value; and control the processing device to process the crystal to be processed based on the first surface parameter and the second surface parameter.

[0009] Some embodiments of the present specification include at least the following beneficial effects: (1) by processing the light output surface through the first surface parameters and / or processing the non-light output surface through the second surface parameters, the light yield and / or light output of each crystal can be made consistent by changing the crystal surface parameters (for example, surface roughness, etc.); (2) the surface parameters of the non-light output surface and the light output surface of the crystal to be processed are automatically determined, so that on the basis of meeting the crystal performance requirements and processing requirements, the polishing parameters and grinding parameters are determined based on the determined surface parameters, thereby realizing fully automatic processing of the crystal and reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] This specification will be further described in the form of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting, and in these embodiments, like numbers represent like structures, wherein:

[0011] FIG1 is an exemplary module diagram of a crystal processing system according to some embodiments of the present specification;

[0012] FIG2A is a schematic diagram of an exemplary structure of a crystal processing system according to some embodiments of this specification;

[0013] FIG2B is a schematic diagram of an exemplary structure of a processing device according to some embodiments of this specification;

[0014] FIG3 is an exemplary flow chart of a crystal processing method according to some embodiments of this specification;

[0015] FIG4 is an exemplary schematic diagram of a crystal processing process according to some embodiments of the present specification;

[0016] FIG5 is an exemplary flow chart of determining processing quality according to some embodiments of this specification;

[0017] FIG6 is an exemplary schematic diagram of preprocessing according to some embodiments of the present specification. DETAILED DESCRIPTION

[0018] To more clearly illustrate the technical solutions of the embodiments of this specification, the following briefly describes the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this specification. Those skilled in the art can apply this specification to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0019] It should be understood that the terms "system," "device," "unit," and / or "module" used herein are a method for distinguishing different components, elements, parts, portions, or assemblies at different levels. However, if other terms can achieve the same purpose, the terms may be replaced by other expressions.

[0020] As used in this specification and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not refer to the singular but also include the plural. Generally speaking, the terms "comprises" and "include" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0021] Flowcharts are used throughout this specification to illustrate the operations performed by systems according to embodiments of this specification. It should be understood that preceding or following operations do not necessarily need to be performed in exact order. Instead, the steps may be processed in reverse order or simultaneously. Furthermore, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0022] FIG. 1 is an exemplary module diagram of a crystal processing system according to some embodiments of the present specification.

[0023] As shown in FIG. 1 , in some embodiments, a crystal processing system 100 may include an input module 110 , a determination module 120 , a processing module 130 , and a processing module 140 .

[0024] In some embodiments, the input module 110 is configured to obtain a target light yield and / or a target light output value of the crystal to be processed.

[0025] In some embodiments, the determination module 120 is configured to determine the light output surface and the non-light output surface of the crystal to be processed. In some embodiments, the determination module 120 may be further configured to obtain an initial light yield and / or an initial light output value for each surface of the crystal to be processed, and determine the light output surface and the non-light output surface based on the initial light yield and the target light yield of each surface; and / or determine the light output surface and the non-light output surface based on the initial light output value and the target light output value of each surface.

[0026] In some embodiments, processing module 130 is configured to determine a first surface parameter of the light output surface and a second surface parameter of the non-light output surface based on a target light yield and / or a target light output value. In some embodiments, processing module 130 may be further configured to obtain an initial light yield and / or an initial light output value, as well as an initial surface parameter, of the light output surface, and determine the first surface parameter based on the initial light yield, initial surface parameter, and target light yield of the light output surface; and / or determine the first surface parameter based on the initial light output value, initial surface parameter, and target light output value of the light output surface. In some embodiments, processing module 130 may be configured to determine a second surface parameter based on the first surface parameter and the target light yield; and / or determine the second surface parameter based on the first surface parameter and the target light output value.

[0027] In some embodiments, the processing module 140 is configured to process the crystal to be processed based on the first surface parameter and the second surface parameter. In some embodiments, the processing module 140 can be further configured to determine polishing parameters based on the first surface parameter, and process the light output surface based on the polishing parameters. In some embodiments, the processing module 140 can also be configured to determine grinding parameters based on the second surface parameter, and process the non-light output surface based on the grinding parameters. In some embodiments, the processing module 140 can be further configured to determine the polishing parameters and / or grinding parameters using a machine learning model, and the grinding parameters include the grit size of the grinding grit.

[0028] In some embodiments, the processing module 140 may also be configured to obtain the vibration response of the polishing disk and / or the grinding disk during the processing, and determine the processing quality of the light output surface and / or the non-light output surface based on the vibration response. In some embodiments, the processing module 140 may be further configured to extract the characteristic frequency band in the vibration response and identify the characteristic frequency band to determine whether the processed crystal has defects. In some embodiments, the processing module 140 may be further configured to process the characteristic frequency band through an abnormality recognition model to determine whether the processed crystal has defects, and the abnormality recognition model is a machine learning model. In some embodiments, in response to the processing quality not meeting the preset conditions, the processing module 140 may also be configured to stop processing or output a prompt message. In some embodiments, the processing module 140 may also be configured to obtain the vibration response of the polishing disk and / or the grinding disk during the processing and a reference vibration response, and in response to the difference between at least one frequency response parameter of the vibration response and the reference vibration response not meeting the preset response conditions, stop processing or output a prompt message.

[0029] In some embodiments, the processing module 140 can also be configured to process the non-light output surface based on a first polishing pressure and obtain a first polishing feedback; in response to the first polishing feedback satisfying the first pressurization condition, process the non-light output surface based on a second polishing pressure and obtain a second polishing feedback; in response to the second polishing feedback satisfying the first pressurization condition, process the non-light output surface based on a third polishing pressure; wherein, the first polishing pressure < the second polishing pressure < the third polishing pressure. In some embodiments, the first polishing feedback and the second polishing feedback include the torque of the motor driven by the polishing disc. In some embodiments, the first polishing feedback and the second polishing feedback include polishing efficiency, which is determined based on the polishing amount and / or the number of polishing turns, and the polishing amount is obtained by a laser rangefinder disposed above the polishing disc.

[0030] In some embodiments, the processing module 140 can also be configured to process the light output surface based on a first polishing pressure and obtain a first polishing feedback; in response to the first polishing feedback satisfying a second pressurization condition, process the light output surface based on a second polishing pressure and obtain a second polishing feedback; in response to the second polishing feedback satisfying a second pressurization condition, process the light output surface based on a third polishing pressure; wherein, the first polishing pressure < the second polishing pressure < the third polishing pressure.

[0031] In some embodiments, the processing module 140 may be further configured to pre-process the initial processing materials to obtain the crystal to be processed. In some embodiments, the pre-processing may include shaping, and the processing module 140 may be further configured to arrange multiple initial processing materials and polish the cross-sections of the arranged multiple initial processing materials. In some embodiments, the pre-processing may include combining, and the processing module 140 may be further configured to bond the multiple initial processing materials to form a combined processing material, and further bond a protective layer to the combined processing material to obtain the crystal to be processed.

[0032] In some embodiments, the crystal processing system 100 may further include a detection module. The detection module may be configured to detect the crystal to be processed or the initial processing material. In some embodiments, the detection module may include an image recognition module and a measurement module. The image recognition module may be configured to detect the type and appearance of the crystal to be processed or the initial processing material. The measurement module may be configured to detect the roughness, initial light yield, and / or initial light output value of the crystal to be processed or the initial processing material.

[0033] In some embodiments, the crystal processing system 100 may be integrated into a processor. The processor may process data and / or information obtained from other devices or system components. The processor may execute program instructions based on this data, information, and / or processing results to perform one or more functions described herein. By way of example only, the processor may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or any combination thereof.

[0034] For detailed description of each module, please refer to Figure 3-5 and its related description.

[0035] It should be noted that the above description of the crystal processing system and its modules is for convenience of description only and does not limit this specification to the scope of the embodiments cited. It is understandable that for those skilled in the art, after understanding the principle of the system, it is possible to arbitrarily combine the various modules, or form a subsystem to connect with other modules without deviating from this principle. In some embodiments, the input module 110, determination module 120, processing module 130 and processing module 140 disclosed in Figure 1 can be different modules in a system, or a module can realize the functions of two or more modules mentioned above. For example, each module can share a storage module, or each module can have its own storage module. Such variations are all within the scope of protection of this specification.

[0036] FIG. 2A is a schematic diagram illustrating an exemplary structure of another crystal processing system according to some embodiments of the present specification.

[0037] As shown in FIG. 2A , in some embodiments, a crystal processing system 200 may include a control host 210 , a processing device 220 , and a roughness detection device 230 .

[0038] The control host 210 can control the processing equipment 220 or the roughness detection equipment 230 to execute the crystal processing method described in the embodiments of this specification. In some embodiments, the control host 210 can be a processor.

[0039] In some embodiments, the control host 210 is configured to obtain a target light yield and / or target light output value for a crystal to be processed; determine a light-output surface and a non-light-output surface of the crystal to be processed; determine a first surface parameter of the light-output surface and a second surface parameter of the non-light-output surface based on the target light yield and / or target light output value; and control a processing device to process the crystal to be processed based on the first and second surface parameters. For detailed descriptions of the crystal processing method, please refer to Figures 3-5 of the specification and the related descriptions.

[0040] The processing equipment 220 is a device for processing the crystal to be processed. In some embodiments, the processing equipment 220 can perform crystal-related processing such as grinding and polishing.

[0041] In some embodiments, lapping can be a process in which abrasive particles are applied or pressed onto a lap, and the lap and the crystal to be processed are subjected to relative motion under a certain pressure to perform a finishing operation on the surface of the crystal to be processed. The surface flatness of the crystal to be processed can be adjusted by lapping. The surface obtained by lapping is referred to as a lapping surface. In some embodiments, one or both end faces of the crystal to be processed can be lapping to obtain one or two lapping surfaces. An end face refers to the plane at both ends of the length of the crystal to be processed. In some embodiments, all surfaces of the crystal to be processed can be lapping to obtain multiple lapping surfaces. For example, if the crystal to be processed is a rectangular parallelepiped, all six faces of the crystal to be processed can be lapping. In some embodiments, the lapping method can include one or more of single-sided lapping and double-sided lapping. The particle size of the abrasive medium contained in the lapping liquid can be 100-2500 mesh, preferably 100-2000 mesh. The type of lapping medium can include aluminum oxide, silicon oxide, cerium oxide, silicon carbide, boron carbide, diamond, etc.

[0042] In some embodiments, polishing can be a processing method that uses mechanical, chemical, or electrochemical methods to treat the surface of the crystal being processed, thereby reducing the surface roughness of the crystal to obtain a bright, smooth surface. In some embodiments, polishing can be performed on at least one surface of the crystal being processed. For example, processing equipment 220 can perform polishing on one or both end surfaces of the crystal being processed. The surface obtained by polishing is referred to as a polished surface. In some embodiments, polishing can be performed on the ground surface to obtain a polished surface. In some embodiments, polishing can also be performed on the non-ground surface to obtain a polished surface. In some embodiments, polishing can be performed on the end surface to obtain a polished surface. The polishing process can use a polishing slurry with finer grinding media to polish the surface of the crystal being processed. The specific process of polishing is the same as that of grinding. The polishing media contained in the polishing slurry can have a particle size of 5μm to 0.001μm, and the type of polishing media can be aluminum oxide, silicon oxide, cerium oxide, silicon carbide, boron carbide, diamond, etc. In some embodiments, polishing pads are attached to the upper and lower grinding discs before polishing. The polishing pads can be made of polyurethane, etc.

[0043] In some embodiments, processing equipment 220 can also perform pre-processing of the crystals to be processed. This pre-processing can include shaping and combining. Shaping involves arranging the initial workpieces and then polishing their cross-sections. Combining involves bonding the initial workpieces to form a combined workpiece and applying a protective layer to the combined workpiece. For more information on shaping and combining, see Figure 3 and its related description.

[0044] FIG2B is a schematic diagram of an exemplary structure of a processing device according to some embodiments of the present specification.

[0045] As shown in FIG2B , in some embodiments, processing equipment 220 includes a grinding disc and a polishing disc. In some embodiments, the grinding disc and the polishing disc can be placed in two processing areas, so that grinding and polishing can be performed in the two processing areas respectively. In some embodiments, the grinding disc and the polishing disc can be placed in the same processing area. When grinding is required, the grinding disc is installed in the processing area; when polishing is required, the polishing disc is installed in the processing area.

[0046] As shown in Figure 2B, in some embodiments, the grinding discs include an upper grinding disc 221 and a lower grinding disc 223, and the polishing discs include an upper polishing disc 222 and a lower polishing disc 224. The grinding discs are used for grinding, and the polishing discs are used for polishing. During grinding, a crystal 225 to be processed can be placed between the upper grinding disc 221 and the lower grinding disc 223. During polishing, the crystal 225 to be processed can be placed between the upper polishing disc 222 and the lower polishing disc 224. In some embodiments, the processing equipment 220 may further include a rotating shaft 226, to which the upper grinding disc 221 / upper polishing disc 222 is connected. In some embodiments, at least one vibration sensor 227 may be provided on the upper side of the upper grinding disc 221 / upper polishing disc 222. The vibration sensor 227 is used to detect the vibration response of the upper grinding disc 221 or upper polishing disc 222 during processing. For more information on vibration response, please refer to Figure 5 and the related description.

[0047] As shown in FIG2B , in some embodiments, the processing equipment 220 may further include a laser rangefinder 228 and a slip ring 229. The laser rangefinder 228 is used to measure the displacement of the upper grinding disc 221 or the upper polishing disc 222, thereby obtaining the grinding or polishing amount. The slip ring 229 may be used to lead out signal lines to prevent them from becoming tangled due to rotation.

[0048] When processing, the upper grinding disc and the lower grinding disc are used in combination to grind the crystal to be processed; the upper polishing disc and the lower polishing disc are used in combination to polish the crystal to be processed. For example, the crystal to be processed is fixed between the upper grinding disc (or upper polishing disc) and the lower grinding disc (or lower polishing disc). When the upper grinding disc (or upper polishing disc) and / or the lower grinding disc (or lower polishing disc) rotate, the position where the upper grinding disc (or upper polishing disc) and / or the lower grinding disc (or lower polishing disc) contact the crystal to be processed is rubbed. In some embodiments, the lower side of the upper grinding disc (for example, the side of the upper grinding disc that contacts the crystal to be processed) and the upper side of the lower grinding disc (for example, the side of the lower grinding disc that contacts the crystal to be processed) can be coated or pressed with abrasive materials. For example, abrasive sand or abrasive liquid. In some embodiments, a polishing medium can be placed on the polishing disc, and the surfaces of the lower side of the upper polishing disc and the upper side of the lower polishing disc can be coated with polishing materials, such as polishing liquid.

[0049] In some embodiments, the crystal processing system 200 includes a roughness detection device 230. The roughness detection device 230 is used to detect the roughness of the crystal to be processed. For example, the roughness detection device 230 can detect the roughness of each face of the crystal to be processed. In some embodiments, the roughness detection device 230 can detect the surface roughness of the crystal to be processed before and after grinding, during grinding, before and after polishing, and / or during polishing. In some embodiments, the roughness detection device 230 can transmit the detection value of the roughness to the control host 210, and the control host 210 can determine the first surface parameter and the second surface parameter based on the detection value of the roughness. The roughness detection device 230 can be any device capable of detecting the surface roughness of an object (for example, a roughness meter, etc.), and is not limited here.

[0050] In some embodiments, the crystal processing system 200 may further include an image recognition device, a light yield detection device, and a light output value detection device. The image recognition device can be used to detect the type and appearance of the crystal to be processed or the initial processing material. The light yield detection device can be used to detect the initial light yield of each face of the crystal to be processed. The light output value detection device can be used to detect the initial light output value of each face of the crystal to be processed. The image recognition device can be any device capable of capturing and identifying an image, and the light output value detection device can be any device capable of detecting light output values. For more information on initial light yield and initial light output values, see Figure 3 and its related description.

[0051] FIG3 is an exemplary flow chart of a crystal processing method according to some embodiments of this specification. As shown in FIG3 , process 300 includes the following steps. In some embodiments, process 300 can be performed by crystal processing system 100 or crystal processing system 200.

[0052] Step 310 , obtaining a target light yield and / or target light output value of the crystal to be processed. In some embodiments, step 310 may be executed by the input module 110 or the control host 210 .

[0053] The crystal to be processed refers to the crystal to be processed. In some embodiments, the crystal to be processed can be a crystal to be processed for size, shape, and surface parameters (e.g., surface roughness, etc.). Processing includes processing operations to change the size, shape, and surface parameters of the crystal. In some embodiments, the crystal to be processed can be a combination of one or more crystals of various types such as cerium bromide crystals, cerium-doped lanthanum bromide crystals, cerium-doped lanthanum chloride crystals, silicate scintillating crystals, and garnet scintillating crystals. The shape of the crystal to be processed can be various. For example, the crystal to be processed can be a crystal rod, a crystal block, or a crystal of other shapes.

[0054] Light yield refers to a crystal's ability to convert gamma photons into visible light. The light output value is the ratio of the total number of photons emitted by the crystal to the energy of the incident radiation absorbed. The target light yield is the desired light yield of the crystal being processed. The target light output value is the desired light output value of the crystal being processed. The target light yield and / or target light output value can be user-defined and set based on actual production requirements.

[0055] In some embodiments, the crystal to be processed may be a crystal obtained by pre-processing. The pre-processing may be performed by the processing module 140. In some embodiments, the processing module 140 or the control host 210 may control the processing equipment 220 to pre-process the initial processing material to obtain the crystal to be processed.

[0056] Initial processing material is untreated raw crystal material. This material can be ingots, blocks, or other shaped crystals grown in a crystal growth facility. During the growth process, the raw crystal material may develop microcracks or small chippings. To avoid these cosmetic defects, the raw crystal material may be cut into ingots of varying sizes. To ensure uniform dimensions before grinding or to avoid cosmetic defects, the initial processing material requires pretreatment.

[0057] In some embodiments, the pre-treatment may include a shaping treatment, which refers to a process for treating surface defects of the initial processed material and maintaining the uniform size of the crystals to be processed.

[0058] In some embodiments, the shaping process includes: directly grinding a defective side of a single initially processed material to remove obvious defects on the side.

[0059] In some embodiments, the shaping process includes: arranging a plurality of initial processed materials and polishing the cross-sections of the arranged plurality of initial processed materials. In some embodiments, a plurality of initial processed materials having similar sizes and / or similar light yields may be arranged and the cross-sections of the arranged plurality of initial processed materials may be polished. In some embodiments, the close size may mean that the size deviation between the initial processed materials is less than a corresponding size deviation threshold (for example, 0.1 mm, etc.). For example, when the length deviation, width deviation, and height deviation of the plurality of initial processed materials are respectively less than the corresponding size deviation threshold, the sizes of the plurality of initial processed materials may be considered to be close. The size of the initial processed materials can be obtained by measurement. In some embodiments, the close light yield may mean that the light yield deviation between the initial processed materials is less than a corresponding light yield deviation threshold (for example, 3600 Ph / Mev, etc.). The light yield of the initial processed materials can be measured by a scintillation detector system.

[0060] In some embodiments, the appearance of the initial material can be inspected before pretreatment. For example, a detection module or image recognition device can detect the type and appearance of the initial material. In some embodiments, the detection module or image recognition device can detect whether there are cracks or gaps on the surface of the initial material. Furthermore, the pretreatment module can pretreatment the initial material based on the detection results, for example, by polishing the surface with cracks or gaps.

[0061] In some embodiments, the defective surfaces of multiple initial processed materials can be placed on the same side, and the adjacent surfaces corresponding to the defective surfaces of the multiple initial processed materials can be overlapped and placed in sequence to achieve the arrangement and placement of multiple initial processed materials.

[0062] In some embodiments, multiple initial materials can be arranged along their axes. For example, the axes of the multiple initial materials can be arranged so that they are parallel. This arrangement is merely illustrative and does not limit the present embodiment.

[0063] In some embodiments, each of the initial processing materials may be separated by a protective layer (eg, polyurethane skin, etc.), wherein the protective layer between the initial processing materials can prevent the initial processing materials from being scratched, broken, etc. during the processing and polishing process.

[0064] The cross section is a side perpendicular to the arrangement direction of the plurality of initial processed materials and is also the side that needs to be polished. In some embodiments, the cross section can be a "large surface" formed by arranging the sides of the plurality of initial processed materials that have defects.

[0065] Before polishing, the processing module 140 or the control host 210 can draw a reference flat grinding line (virtual line) across each initial processing material. The reference flat grinding line is parallel to the cross-sections of the multiple initial processing materials placed in an array. In some embodiments, the processing module 140 or the control host 210 can draw a reference flat grinding line based on the defects present in the multiple initial processing materials. For example, the reference flat grinding line is drawn according to the degree of defects in the initial processing materials (for example, line marks, bumps, cracks), and the reference flat grinding line needs to be lower than the defect position of the initial processing materials. During the polishing process, the processing equipment 220 can perform the polishing process until the cross-section position is polished to the reference flat grinding line. For example only, if a crack or notch is detected on the surface of the initial processing material, the reference flat grinding line can be drawn below the notch. After polishing to the reference flat grinding line, the crack or notch has been polished away, and the defect of the initial processing material has been removed.

[0066] As an example only, the shaping process using the processing equipment 220 may be as follows:

[0067] S1. Arranging and placing multiple initial processing materials may include:

[0068] S11. Measure the dimensions at both ends of the multi-line or inner circle cutting surface, mark the high point position of the initial processed material (for example, the highest point position on a certain surface), and use the surface with the largest degree of defects (for example, line marks, bumps, cracks, etc.) as the cross section.

[0069] S12. Place limit blocks in three directions on the workbench of the flat grinder, place the initial processing materials on the workbench in turn, and place the high points in the same direction; a polyurethane skin can be placed between each initial processing material to prevent the initial processing materials from causing cracks due to friction.

[0070] S13. Use the limiting blocks to limit the initial processing materials one by one in turn, and squeeze the left and right ends of the initial processing materials against each other to reduce the gap.

[0071] S14. Turn on the magnetic switch on the equipment control panel to magnetically adsorb the limit block on the flat grinder workbench.

[0072] S2. Grinding the sections of the arranged multiple initial processed materials may include:

[0073] S21. Draw a reference flat grinding line on the combined workpiece, move the grinding wheel to a position 1 to 2 mm above the highest point of the combined workpiece; then move the grinding wheel to the starting point of the flat grinding position (for example, the highest point of the combined workpiece), and require a horizontal distance of 5 to 10 mm between the grinding wheel and the crystal to prevent damage to the grinding wheel surface.

[0074] S22. Determine the processing parameters: the total amount of grinding is set according to the actual situation, the grinding weight is 0.005-0.025 mm, the number of light grinding is 1-3 times, the grinding width is the maximum length of the combined processing material + 10 mm, and the grinding sand is 100-2500 mesh.

[0075] S23. Start the flat grinder to perform shaping operations, and use a right-angle tool to control the angle during the operation.

[0076] After completing the shaping of a single surface of the initial workpiece, the aforementioned steps may be repeated for shaping the other surfaces.

[0077] In some embodiments, pre-processing may include a composite process, which includes bonding multiple initial materials (e.g., initial materials with or without shaping treatment) to form a composite material. The bonding surfaces are adjacent surfaces of the surface to be processed. For example, the multiple initial materials can be bonded together using glue or an adhesive medium. Each initial material in the resulting composite material can be ground or polished together. In some embodiments, the processing module 140 or the control host 210 can control the processing equipment 220 to further bond a protective layer to the composite material to obtain a crystal to be processed. For example, a protective layer can be bonded to each surface of the composite material except the processing surface. The protective layer has a higher hardness than the initial materials to protect the initial materials during processing. As shown in FIG6 , a group of initial materials 610 can be bonded to form a composite material 620. A protective layer 630 can be bonded to all four sides of the composite material 620 (e.g., the sides other than the surface to be processed), resulting in a crystal to be processed 640. For example, protective layers of the same size can be bonded to opposing surfaces, or a protective layer can be bonded around the perimeter of the combined materials. The protective layer can be a polyurethane coating or other protective material, without limitation. The crystals obtained from the combined process are a combination of multiple initial materials. Polishing these materials together can reduce repetitive operations, improve processing efficiency, and make the finished crystals more uniform in size.

[0078] In some embodiments, the crystal to be processed may also be an unprocessed crystal raw material, and the crystal processing process described in the embodiments of this specification may be directly performed.

[0079] Pre-processing the initial material removes any defects that may exist in the raw crystals and maintains uniform size across multiple crystals. Adding a protective layer also protects the crystals during subsequent processing, improving both quality and efficiency.

[0080] Step 320 , determining the light output surface and the non-light output surface of the crystal to be processed. In some embodiments, step 320 may be executed by the determination module 120 or the control host 210 .

[0081] The light output surface is the surface of the crystal to be processed where light output is planned. In some embodiments, the number of light output surfaces may be one or two. If there are two light output surfaces, the two light output surfaces may be opposite each other. By way of example only, if the crystal to be processed is a rectangular parallelepiped, the light output surface of the crystal to be processed may be the top or bottom surface of the rectangular parallelepiped. In some embodiments, the number of light output surfaces may be manually determined or input.

[0082] The non-light output surface is the surface of the crystal to be processed other than the light output surface. As an example only, if the light output surface of the crystal to be processed is the top or bottom surface of a rectangular parallelepiped, the non-light output surface of the crystal to be processed is the four side surfaces of the rectangular parallelepiped.

[0083] In some embodiments, the determination module 120 or the control host 210 can determine the light output surface and the non-light output surface of the crystal to be processed based on manual input.

[0084] In some embodiments, the determination module 120 or the control host 210 can determine the light output surface and the non-light output surface based on the target light yield of the crystal to be processed and the initial light yield of each surface. In some embodiments, the determination module 120 or the control host 210 can obtain the initial light yield of each surface of the crystal to be processed and determine the light output surface and the non-light output surface based on the initial light yield of each surface and the target light yield.

[0085] The initial light yield is the light yield of one face of the crystal to be processed. Because the surface conditions of each face of the crystal to be processed vary, the initial light yield corresponding to each face may be different. In some embodiments, the initial light yield of each face of the crystal to be processed can be measured by a measurement module. In some embodiments, the light yield (in phe / MeV) can be measured by a scintillation detector system.

[0086] In some embodiments, the determination module 120 or the control host 210 can determine the light output surface and the non-light output surface based on the target light output value of the crystal to be processed and the initial light output value of each surface. In some embodiments, the determination module 120 or the control host 210 can obtain the initial light output value of each surface of the crystal to be processed and determine the light output surface and the non-light output surface based on the initial light output value and the target light output value of each surface.

[0087] The initial light output value is the light output value of one face of the crystal to be processed. For example, the initial light output value can be the ratio of the total number of photons emitted by one face of the crystal to be processed to the incident radiation energy absorbed by that face. Due to the different surface conditions of each face of the crystal to be processed, the initial light output value corresponding to each face may be different. In some embodiments, a measurement module can be used to detect the initial light output value of each face of the crystal to be processed. In some embodiments, the light output performance of the crystal can be tested according to measurement methods in relevant industry standards. For example, in conjunction with the T / CAB 0180-2022 standard (entitled "GAGG Crystal and Wafer Array Performance Measurement Method") issued by the China Association for Promoting Industry-University-Research Cooperation, the full absorption peak method and the Compton edge method can be used for measurement. The measurement principle is: when monoenergetic gamma radiation is incident on a scintillation detector, the distribution of its output pulse amplitude is mainly composed of spectral segments such as the Compton distribution and the full absorption peak (except for low-atomic-number scintillators). The full absorption peak method and the Compton edge method use the full absorption peak or the Compton distribution edge amplitude as the metric for determining the scintillator light output, respectively. In some embodiments, the light output value may also be calculated based on a correspondence between the light yield and the light output value (the correspondence may be determined based on experiments).

[0088] The number of light output surfaces is different, and the method of determining the light output surfaces is also different.

[0089] In some embodiments, in response to there being only one light output surface, the determination module 120 or the control host 210 may determine the surface whose initial light output value is closest to the target light output value as the light output surface, and the remaining surfaces as non-light output surfaces. In some embodiments, in response to there being only one light output surface, the determination module 120 or the control host 210 may determine the surface whose initial light output value is closest to the target light output value as the light output surface, and the remaining surfaces as non-light output surfaces. In some embodiments, in response to there being only one light output surface, the determination module 120 or the control host 210 may determine the surface whose initial light output value is closest to the target light output value and the surface whose initial light output value is closest to the target light output value as the light output surface, and the remaining surfaces as non-light output surfaces.

[0090] In some embodiments, in response to the light output surfaces being two opposing surfaces, the determination module 120 or the control host 210 may determine the average of the initial light yields of each of the two opposing surfaces, and determine the two opposing surfaces whose average initial light yields are closest to the target light yield as light output surfaces, with the remaining surfaces being non-light output surfaces. In some embodiments, in response to the light output surfaces being two opposing surfaces, the determination module 120 or the control host 210 may determine the average of the initial light output values ​​of each of the two opposing surfaces, and determine the two opposing surfaces whose average initial light output values ​​are closest to the target light output value as light output surfaces, with the remaining surfaces being non-light output surfaces. In some embodiments, in response to the light output surfaces being two opposing surfaces, the determination module 120 or the control host 210 may determine the average of the initial light yields and the average of the initial light output values ​​of each of the two opposing surfaces, and determine the two opposing surfaces whose average initial light yields are closest to the target light yield and the two opposing surfaces whose average initial light yields are closest to the target light yield as light output surfaces, with the remaining surfaces being non-light output surfaces. In some embodiments, light output surfaces and non-light output surfaces may also be determined using other methods. The embodiments of this specification do not limit the method for determining the light output surface and the non-light output surface.

[0091] In some embodiments of this specification, target light yield and initial light yield for each surface, and / or target light output value and initial light output value for each surface, can be used to determine the light output surface with the lowest processing requirements and the non-light output surface, thereby improving processing efficiency. When light output is provided to two opposing surfaces, determining the light output surface based on the average light yield or light output value can effectively avoid the problem of uneven light output.

[0092] Step 330 : Determine a first surface parameter of the light output surface and a second surface parameter of the non-light output surface based on the target light yield and / or target light output value. In some embodiments, step 330 may be performed by the processing module 130 or the control host 210 .

[0093] Surface parameters refer to parameters related to the surface condition of the crystal. In some embodiments, the surface parameters may include at least one of surface roughness Ra, warpage Wap, total thickness deviation TTV, perpendicularity, parallelism, etc.

[0094] The first surface parameter is the parameter value that the surface parameter of the light output surface is expected to reach after processing. The first surface parameters of different light output surfaces can be the same or different.

[0095] In some embodiments, the first surface parameter may include a target roughness of the light output surface. The target roughness of the light output surface is a parameter value that the surface roughness Ra of the light output surface after processing is expected to reach.

[0096] The second surface parameter is the parameter value that the surface parameter of the non-light output surface is expected to reach after processing. The second surface parameters of different non-light output surfaces can be the same or different.

[0097] In some embodiments, the second surface parameter may include a target roughness of the non-light output surface. The target roughness of the non-light output surface is a parameter value that the surface roughness Ra of the non-light output surface is expected to reach after processing.

[0098] In some embodiments, the processing module 130 or the control host 210 can determine the first surface parameter and the second surface parameter based on the target light yield and / or target light output value in a variety of ways. For example, the processing module 130 or the control host 210 can determine the surface parameters (including the first surface parameter and / or the second surface parameter) based on historical processing data, including: determining historical processing data having historical light yield and / or historical target light output values ​​that are similar to or the same as the current target light yield and / or target light output value from the historical processing data, and determining the historical first surface parameter and the historical second surface parameter in the historical processing data as the first surface parameter and the second surface parameter corresponding to the current target light yield and / or target light output value, respectively.

[0099] In some embodiments, the control host 210 may first determine the first surface parameter, and then determine the second surface parameter based on the first surface parameter.

[0100] In some embodiments, the processing module 130 or the control host 210 can obtain the initial light yield and / or initial light output value of the light output surface, as well as the initial surface parameters; determine the first surface parameters based on the initial light yield, initial surface parameters and target light yield of the light output surface; and / or determine the first surface parameters based on the initial light output value, initial surface parameters and target light output value of the light output surface.

[0101] The initial surface parameters are the initial values ​​of the surface parameters of the light output surface before processing. The initial surface parameters can be obtained by detecting the light output surface of the crystal to be processed using relevant detection equipment (eg, roughness detection equipment, etc.).

[0102] In some embodiments, the processing module 130 or the control host 210 can determine the first surface parameter (e.g., the target roughness of the light output surface) in a variety of ways based on the initial surface parameters, initial light yield, and target light yield of the light output surface. For example, a correspondence between different initial surface parameters, different initial light yields, different target light yields, and different target roughnesses can be preset based on historical data or prior knowledge, and the corresponding target roughness can be determined based on the correspondence and the initial surface parameters, initial light yield, and target light output value of the current light output surface. In some embodiments, the processing module 130 or the control host 210 can determine the first surface parameter (e.g., the target roughness of the light output surface) in a variety of ways based on the initial surface parameters, initial light output value, and target light output value of the light output surface. For example, a correspondence between different initial surface parameters, different initial light output value, different target light output value, and different target roughnesses can be preset based on historical data or prior knowledge, and the corresponding target roughness can be determined based on the correspondence and the initial surface parameters, initial light output value, and target light output value of the current light output surface.

[0103] In some embodiments, the processing module 130 or the control host 210 may determine the first surface parameter using a first determination model, wherein the first determination model is a machine learning model, such as a convolutional neural network model.

[0104] In some embodiments, the input of the first determination model may include an initial light output value (and / or initial light yield) of at least one light output surface, initial surface parameters, and a target light output value (and / or target light yield) of the crystal to be processed, and the output may include first surface parameters corresponding to at least one light output surface. In some embodiments, the first determination model may be obtained by training a plurality of first training samples with first training labels. As an example only, a plurality of first training samples with first labels may be input into the initial first determination model, a loss function may be constructed using the first labels and the results of the initial first determination model, and the parameters of the initial first determination model may be iteratively updated based on the loss function. When the loss function of the initial first determination model meets a preset condition, the model training is completed, and a trained first determination model is obtained. The preset condition may be that the loss function converges, the number of iterations reaches a threshold, etc.

[0105] In some embodiments, the first training sample may include at least a sample initial light output value (and / or sample initial light yield) of the sample light output surface, sample initial surface parameters, and a sample target light output value (and / or sample target light yield) of the sample to-be-processed crystal. The first training label may be the first surface parameter corresponding to the sample light output surface. The first training label may be obtained manually or automatically based on historical data.

[0106] In some embodiments, the processing module 130 or the control host 210 may determine the second surface parameter based on the first surface parameter and the target light output value (and / or target light yield). For example, the processing module 130 or the control host 210 may determine the second surface parameter based on the first surface parameter and the target light output value (and / or target light yield) in combination with the number of light output surfaces.

[0107] In some embodiments, in response to the light output surfaces being two opposing surfaces, the processing module 130 or the control host 210 may determine the second surface parameters of the non-light output surface based on the first surface parameters of the light output surface and the target light output value (and / or target light yield) of the crystal to be processed. For example, the processing module 130 or the control host 210 may input the first surface parameters of the two opposing light output surfaces into a second determination model to thereby output the second surface parameters of the non-light output surface. See below for more details on the second determination model.

[0108] In some embodiments, in response to there being only one light output surface, the processing module 130 or the control host 210 may first determine the second surface parameters of the non-light output surface surrounding the light output surface based on the first surface parameters of the light output surface and the target light output value (and / or target light yield) of the crystal to be processed, and then determine the second surface parameters of the non-light output surface relative to the light output surface based on the first surface parameters of the light output surface and the target light output value (and / or target light yield) of the crystal to be processed.

[0109] The non-light output surfaces surrounding the light output surface refer to non-light output surfaces adjacent to the light output surface, and the non-light output surfaces opposite the light output surface refer to non-light output surfaces opposite the light output surface. For example, if the crystal to be processed is a rectangular parallelepiped and the light output surface is the top surface of the crystal to be processed, the second surface parameters of the four side surfaces of the crystal to be processed can be determined first, and then the second surface parameters of the bottom surface of the crystal to be processed can be determined.

[0110] In some embodiments of the present disclosure, by distinguishing non-light output surfaces, the influence of the non-light output surface opposite the light output surface on the light output can be reduced, thereby improving the consistency of the light output of the processed crystal. When there is only one light output surface, the influence of the non-light output surface surrounding the light output surface and the non-light output surface opposite the light output surface on the light output is different. Therefore, by first determining the second surface parameters of the remaining non-light output surfaces (for example, the remaining non-light output surfaces not opposite the light output surface), and then determining the second surface parameters of the non-light output surface opposite the light output surface, the accuracy of the calculated second surface parameters can be improved.

[0111] In some embodiments, the processing module 130 or the control host 210 may determine the second surface parameter in a variety of ways based on the first surface parameter and the target light output value (and / or target light yield).

[0112] In some embodiments, the processing module 130 or the control host 210 may determine the second surface parameter based on the first surface parameter and the target light output value (and / or target light yield) by querying a parameter comparison table. The parameter comparison table includes a correspondence between different first surface parameters, different target light output values ​​(and / or different target light yields), and different second surface parameters. The parameter comparison table may be determined based on historical data or prior knowledge.

[0113] In some embodiments, the processing module 130 or the control host 210 may determine the second surface parameter using a second determination model, wherein the second determination model is a machine learning model (eg, a convolutional neural network model, etc.).

[0114] In some embodiments, the input of the second determination model may include first surface parameters of at least one light output surface and a target light output value (and / or target light yield) of the crystal to be processed, and the output may include second surface parameters of at least one non-light output surface. In some embodiments, the second determination model may be trained using a plurality of second training samples with second training labels. The training process of the second determination model is similar to that of the first determination model. For more details, please refer to the relevant content of the training process of the first determination model.

[0115] In some embodiments, the second training sample may include at least a sample first surface parameter of the sample light output surface and a sample target light output value (and / or sample target light yield) of the sample crystal to be processed. The second training label may be a second surface parameter corresponding to the sample non-light output surface. The second training label may be obtained based on manual labeling or automatically labeled based on historical data. The sample light output surface involved in the second training sample and the sample non-light output surface involved in the second training label belong to the same sample crystal to be processed.

[0116] In some embodiments of the present specification, the first surface parameters of the light output surface are first determined, and then the second surface parameters of the non-light output surface are determined. This can improve the accuracy of the calculated first surface parameters and / or second surface parameters, thereby improving the precision of the processing process. Since the roughness of each surface of the crystal to be processed needs to be within an appropriate range, excessive or insufficient roughness will affect the crystal to be processed. Therefore, the better the accuracy of the first surface parameters and the second surface parameters, the better the performance of the processed crystal. Furthermore, by respectively determining the first surface parameters and the second surface parameters using the first determination model and the second determination model, the self-learning ability of the machine learning model can be utilized to find patterns from a large amount of historical data, obtain the relationship between the initial light output value (and / or initial light yield), the initial surface parameters, the target light output value (and / or target light yield) and the first surface parameters, as well as the relationship between the first surface parameters, the target light output value (and / or target light yield) and the second surface parameters, thereby improving the accuracy and efficiency of determining the first surface parameters and the second surface parameters.

[0117] Step 340 , processing the crystal to be processed based on the first surface parameter and the second surface parameter. In some embodiments, step 340 may be executed by the processing module 140 or the control host 210 controlling the processing device 220 .

[0118] In some embodiments, the processing module 140 or the control host 210 can control the processing equipment 220 to polish the light output surface so that the surface parameters of the light output surface reach the first surface parameters, and to grind the non-light output surface so that the surface parameters of the non-light output surface reach the second surface parameters.

[0119] In some embodiments, the processing module 140 or the control host 210 can determine polishing parameters based on the first surface parameters and process the light output surface based on the polishing parameters. In some embodiments, the processing module 140 or the control host 210 can determine grinding parameters based on the second surface parameters and process the non-light output surface based on the grinding parameters.

[0120] For more details about polishing parameters and / or grinding parameters for processing the crystal to be processed, please refer to Figures 4 and 5 and their related descriptions, which will not be repeated here.

[0121] In some embodiments of the present specification, the light output surface is processed by the first surface parameters and / or the non-light output surface is processed by the second surface parameters. By changing the crystal surface parameters (for example, surface roughness, etc.), the light output of each crystal can be made consistent; on the basis of meeting the crystal performance requirements and processing requirements, fully automatic processing of the crystal is achieved, thereby reducing production costs.

[0122] FIG. 4 is an exemplary schematic diagram of a crystal processing process according to some embodiments of the present specification.

[0123] As shown in Figure 4, in some embodiments, the processing module 140 or the control host 210 can determine the polishing parameters 420 based on the first surface parameters 410, and process the light output surface 430 based on the polishing parameters 420; and / or determine the grinding parameters 450 based on the second surface parameters 440, and process the non-light output surface 460 based on the grinding parameters 450.

[0124] Polishing parameters are processing parameters related to polishing the light output surface. In some embodiments, the polishing parameters may include the relative speed of the upper and lower polishing discs, the polishing liquid flow rate, the polishing pressure, the number of rotations of the upper and lower polishing discs, and the type of polishing grit. The polishing grit may include aluminum oxide, silicon oxide, cerium oxide, silicon carbide, boron carbide, or diamond. The polishing liquid may be formed by mixing at least one polishing grit, such as aluminum oxide, silicon oxide, cerium oxide, silicon carbide, boron carbide, or diamond, with a liquid (e.g., water). The particle size of the polishing liquid may be 0.001 to 5 μm.

[0125] In some embodiments, the processing module 140 or the control host 210 can determine polishing parameters based on the first surface parameters using various methods. For example, the processing module 140 or the control host 210 can determine polishing parameters based on historical processing data, including: determining historical processing data having historical first surface parameters similar to or identical to the current first surface parameters from the historical processing data, and using the polishing parameters corresponding to the historical processing data as the polishing parameters corresponding to the current first surface parameters. For more information on the first surface parameters, see step 330 and the related description thereof, and will not be repeated here.

[0126] In some embodiments, the processing module 140 or the control host 210 may determine the polishing parameters using a processing parameter model, wherein the processing parameter model is a machine learning model, for example, a convolutional neural network model.

[0127] In some embodiments, the processing parameter model may include a polishing layer. The input of the polishing layer includes the first surface parameters of at least one light output surface, and the output of the polishing layer may include the polishing parameters of at least one light output surface. In some embodiments, the polishing layer of the processing parameter model can be obtained by training multiple third training samples with third training labels. The training process of the polishing layer is similar to the training process of the first determination model. For more details, please refer to Figure 3 and its related description. In some embodiments, the third training sample may include at least the sample first surface parameters of the sample light output surface, and the training label may be the corresponding polishing parameter of the sample light output surface. The third training label can be obtained based on manual labeling or automatically labeled based on historical data.

[0128] In some embodiments of this specification, polishing parameters are determined by a machine learning model. The self-learning ability of the machine learning model can be used to find patterns from a large amount of historical data, obtain the relationship between the first surface parameters and the polishing parameters, and improve the accuracy and efficiency of determining the polishing parameters.

[0129] In some embodiments, before polishing, the processing module 140 or the control host 210 can control the processing equipment 220 to protect the surface not to be processed (eg, non-light output surface) (eg, adding a protective layer, etc.).

[0130] In some embodiments, the processing module 140 or the control host 210 can control the processing equipment 220 to place a polishing medium and add polishing liquid on a processing area, such as a polishing plate (e.g., an upper polishing plate and / or a lower polishing plate), place the crystal to be processed on the lower polishing plate, and then apply different polishing pressures to the processing area to perform the polishing process. In some embodiments, the polishing pressure can be divided into three levels: low, medium, and high. The processing module 140 or the control host 210 can increase the polishing pressure from low to high to perform the polishing process. A specific number of rotations can be set under different polishing pressures. For more information about polishing pressure and polishing rotations, please refer to the relevant content about grinding pressure and grinding rotations in Figure 2B.

[0131] In some embodiments, the processing module 140 or the control host 210 may control the processing device 220 to process the light output surface based on a first polishing pressure and obtain a first polishing feedback; in response to the first polishing feedback satisfying a second pressure condition, process the light output surface based on a second polishing pressure and obtain a second polishing feedback; and in response to the second polishing feedback satisfying the second pressure condition, process the light output surface based on a third polishing pressure, where the first polishing pressure < the second polishing pressure < the third polishing pressure.

[0132] In some embodiments, the first polishing pressure may be a low pressure, the second polishing pressure may be a medium pressure, and the third polishing pressure may be a high pressure. The polishing process is initially performed starting with a low pressure and then gradually increasing the polishing pressure.

[0133] The first polishing feedback is feedback obtained after applying the first polishing pressure, and the second polishing feedback is feedback obtained after applying the second polishing pressure. In some embodiments, the first polishing feedback or the second polishing feedback may include polishing efficiency. The polishing efficiency may be determined based on the polishing amount and the polishing time. For example, the polishing efficiency may be the ratio of the polishing amount to the polishing time. The polishing time may be determined by counting the length of time between the start time of polishing and the end time point corresponding to the polishing amount. When the rotational speed is constant, the polishing time may be determined by the number of polishing turns. The polishing amount may be obtained based on a laser rangefinder disposed above the polishing disk. In some embodiments, the first polishing feedback may be the light output value (and / or light yield) of the light output surface after the polishing process, which may be obtained by a measuring module or a detection device.

[0134] The second pressurization condition is a condition for determining whether to continue to apply greater polishing pressure. The second pressurization condition is related to the type of polishing feedback. For example, the second pressurization condition may be that the polishing efficiency has not reached the set value or the rate of change of the polishing efficiency has reached the set condition. When the rate of change of the polishing efficiency becomes larger, it indicates that the surface flatness of the crystal to be processed has changed significantly, and pressure can be applied to perform the next step of polishing. For another example, the second pressurization condition may be that the light output value of the light output surface has not reached the target light output value, or the difference with the target light output value is greater than the difference threshold. For another example, the second pressurization condition may be that the light yield of the light output surface has not reached the target light yield, or the difference with the target light yield is greater than the difference threshold.

[0135] In some embodiments, in response to the first polishing feedback satisfying the second pressure condition, the processing module 140 or the control host 210 can control the processing equipment 220 to process the light output surface based on the second polishing pressure. In response to the first polishing feedback not satisfying the second pressure condition, the processing module 140 or the control host 210 can control the processing equipment 220 to continue processing the crystal to be processed at the first polishing pressure, or to stop processing.

[0136] In some embodiments, in response to the second polishing feedback satisfying the second pressure condition, the processing module 140 or the control host 210 may control the processing equipment 220 to process the light output surface based on the third polishing pressure. In response to the second polishing feedback not satisfying the second pressure condition, the processing module 140 or the control host 210 may control the processing equipment 220 to continue processing the to-be-processed crystal at the second polishing pressure, or to stop processing.

[0137] In some embodiments, specific values ​​of the first polishing pressure, the second polishing pressure, and the third polishing pressure can be determined by staff or relevant industry personnel.

[0138] In some embodiments of this specification, by setting three different polishing pressure levels to perform the polishing process, damage to the crystal to be processed due to a small force-bearing area or uneven force during the polishing process can be avoided.

[0139] Grinding parameters are relevant processing parameters for grinding the non-light output surface. In some embodiments, the grinding parameters may include the grinding method, the type of grinding liquid or the mesh size of the grinding sand. The grinding method can be divided into dry grinding and wet grinding. Among them, dry grinding uses grinding sand to grind directly. Wet grinding requires mixing the grinding sand with a liquid to form a grinding liquid for grinding. The type of grinding liquid can be the same as the type of polishing liquid, except that the particle size (also called mesh size) of the grinding sand (called polishing sand in the polishing liquid) is different. In some embodiments, the grinding parameters may also include the ratio of the mesh size of the grinding sand to water. In some embodiments, the grinding parameters may also include the relative speed of the upper and lower grinding discs, the flow rate of the grinding liquid, the grinding pressure, the number of grinding disc rotations, etc.

[0140] In some embodiments, the processing module 140 or the control host 210 can determine the grinding parameters based on the second surface parameters in various ways. For example, the processing module 140 or the control host 210 can determine the grinding parameters based on historical processing data. The process of determining the grinding parameters is similar to the process of determining the polishing parameters. For more details, please refer to the relevant description above. For more details about the second surface parameters, please refer to step 330 and the related description, and will not be repeated here.

[0141] In some embodiments, the processing module 140 or the control host 210 can determine the grinding parameters through a processing parameter model.

[0142] In some embodiments, the processing parameter model may further include a grinding layer. The grinding layer and the polishing layer are two separate layers in the processing parameter model. In some embodiments, the input of the grinding layer includes the second surface parameters of at least one non-light output surface, and the output of the grinding layer may include the grinding parameters of at least one non-light output surface. In some embodiments, the grinding layer of the processing parameter model can be obtained by training a plurality of fourth training samples with a fourth training label. The training process of the grinding layer is similar to the training process of the first determination model. For more information, see Figure 3 and its related description. In some embodiments, the fourth training sample may at least include the sample second surface parameters of the sample non-light output surface, and the training label may be the corresponding grinding parameter of the sample non-light output surface. The fourth training label can be obtained based on manual labeling or automatically labeled based on historical data. In some embodiments, the polishing layer and the grinding layer of the processing parameter model can be trained separately.

[0143] In some embodiments of this specification, grinding parameters are determined by a machine learning model. The self-learning ability of the machine learning model can be used to find patterns from a large amount of historical data, obtain the relationship between the second surface parameters and the grinding parameters, and improve the accuracy and efficiency of determining the grinding parameters.

[0144] In some embodiments, before performing the grinding process, the processing module 140 or the control host 210 can protect the surface that is not to be processed (eg, the light output surface) (eg, by adding a protective layer, etc.).

[0145] In some embodiments, the processing module 140 or the control host 210 can place abrasive sand or abrasive liquid on a processing area, such as a grinding disc (e.g., an upper grinding disc and / or a lower grinding disc), place the crystal to be processed on the lower grinding disc, and then apply different grinding pressures to the processing area to perform the grinding process. In some embodiments, the grinding pressure can be divided into three levels: low, medium, and high. The processing module 140 or the control host 210 can increase the grinding pressure from low to high to perform the grinding process, and a specific number of rotations can be set under different grinding pressures. For more information about the grinding pressure, number of grinding rotations, and the grinding process, please refer to Figure 2B and its related description.

[0146] In some embodiments, during the grinding process, the processing module 140 or the control host 210 can automatically add abrasives to the grinding liquid or grinding area according to the determined grinding parameters. In some embodiments of this specification, automatically adding abrasives or grinding can achieve fully automatic processing of the crystal to be processed, thereby improving processing efficiency.

[0147] In some embodiments, the processing module 140 or the control host 210 may process the non-light output surface based on a first polishing pressure and obtain a first polishing feedback; in response to the first polishing feedback satisfying a first pressure condition, process the non-light output surface based on a second polishing pressure and obtain a second polishing feedback; and in response to the second polishing feedback satisfying the first pressure condition, process the non-light output surface based on a third polishing pressure, where the first polishing pressure < the second polishing pressure < the third polishing pressure.

[0148] In some embodiments, the first polishing pressure may be a low pressure, the second polishing pressure may be a medium pressure, and the third polishing pressure may be a high pressure. The polishing process is initially performed starting with a low pressure and then gradually increasing the polishing pressure.

[0149] The first grinding feedback is the feedback obtained after applying a first grinding pressure, and the second grinding feedback is the feedback obtained after applying a second grinding pressure. The first pressure condition is the condition used to determine whether to continue applying a higher grinding pressure. The first pressure condition is related to the type of grinding feedback.

[0150] In some embodiments, the first grinding feedback and the second grinding feedback may include the torque of a motor driving the grinding disk. Accordingly, the first pressurizing condition may be that the torque of the motor is greater than a torque threshold range.

[0151] In some embodiments, the first grinding feedback and the second grinding feedback may include grinding efficiency, and the grinding efficiency is determined based on the grinding amount and / or the number of grinding turns, and the grinding amount is obtained by a laser rangefinder arranged above the grinding disc. For example, the grinding efficiency can be determined based on the grinding amount and the grinding time. For example, the grinding efficiency can be the ratio of the grinding amount to the grinding time. The grinding time can be determined by counting the length of time between the time point when grinding starts and the end time point corresponding to the grinding amount. When the rotation speed is constant, the grinding time can be determined by the number of grinding turns. In some embodiments, the laser rangefinder can monitor the displacement of the upper grinding disc, which represents the grinding thickness, thereby determining the grinding amount under the grinding pressure. In some embodiments, the number of grinding turns is the number of turns that the grinding disc (including the upper grinding disc and the lower grinding disc) rotates, which can be obtained based on detection.

[0152] In some embodiments, in response to the first grinding feedback and the second grinding feedback including the grinding efficiency, the first pressurizing condition may be that the grinding efficiency is less than a set value.

[0153] In some embodiments of the present specification, polishing parameters and / or grinding parameters are determined based on the first surface parameters and the second surface parameters, respectively, and the processing process is performed according to the determined polishing parameters and / or grinding parameters, which can realize automatic identification of the crystal to be processed and automatic acquisition of the required polishing liquid, grinding liquid or grinding sand, thereby realizing fully automatic processing of the crystal to be processed.

[0154] In some embodiments, in response to the first polishing feedback satisfying the first pressure condition, the processing module 140 or the control host 210 can control the processing equipment 220 to process the non-light output surface at a second polishing pressure and obtain second polishing feedback. In response to the first polishing feedback not satisfying the first pressure condition, the processing module 140 or the control host 210 can control the processing equipment 220 to continue processing the to-be-processed crystal at the first polishing pressure, or to stop processing.

[0155] In some embodiments, in response to the second polishing feedback satisfying the first pressure condition, the processing module 140 or the control host 210 can control the processing equipment 220 to process the non-light output surface at a third polishing pressure. In response to the second polishing feedback not satisfying the first pressure condition, the processing module 140 or the control host 210 can control the processing equipment 220 to continue processing the unprocessed crystal at the second polishing pressure, or to stop processing.

[0156] In some embodiments, the first grinding pressure, the second grinding pressure, and the third grinding pressure can be determined by a worker or a person skilled in the relevant industry.

[0157] In some embodiments of this specification, by setting three levels of grinding pressure to perform the grinding process, it is possible to avoid damage to the crystal to be processed due to the unevenness of the target surface to be processed, which may be caused by a small force area or uneven force during the grinding process.

[0158] FIG5 is an exemplary flowchart of determining processing quality according to some embodiments of this specification. In some embodiments, process 500 can be performed by the crystal processing system 100 (e.g., the processing module 140) or the crystal processing system 200 (e.g., the control host 210). As shown in FIG5, process 500 includes the following steps.

[0159] During the processing, the processing module 140 or the control host 210 can further determine whether there are defects in the processing quality and make corrections in real time to ensure the processing quality of the crystal to be processed.

[0160] Step 510: Acquire the vibration response of the polishing disc and / or the grinding disc during the processing.

[0161] The vibration response refers to the vibration of the polishing disc (e.g., the upper polishing disc and / or the lower polishing disc) and / or the grinding disc (e.g., the upper grinding disc and / or the lower grinding disc). For example, the vibration response may include the time point, vibration amplitude, vibration frequency, etc. at which the polishing disc and / or the grinding disc vibrates. In some embodiments, the vibration response may be obtained by a device such as a vibration sensor provided on the polishing disc and / or the grinding disc. In some embodiments, when processing (e.g., grinding and / or polishing) one of the surfaces, the processing module 140 or the control host 210 may determine the corresponding vibration curve as the vibration response based on the vibration amplitude detected at multiple time points.

[0162] In some embodiments, the processing module 140 or the control host 210 can obtain vibration responses corresponding to different light output surfaces and / or different non-light output surfaces.

[0163] Step 520 : Determine the processing quality of the light output surface and / or the non-light output surface based on the vibration response.

[0164] Processing quality can reflect whether there are defects in the processing. In some embodiments, processing module 140 or control host 210 can determine processing quality based on the vibration response in various ways. For example, processing module 140 or control host 210 can determine processing quality based on the number of time points in the vibration response where the vibration amplitude is outside the normal amplitude range. A greater number of such time points indicates poorer processing quality.

[0165] In some embodiments, the processing module 140 or the control host 210 can extract a characteristic frequency band from the vibration response and identify the characteristic frequency band to determine whether the processed crystal has defects.

[0166] The characteristic frequency band is a frequency band with abnormal amplitude in the vibration response. As an example only, the vibration of the polishing disc and / or the grinding disc is generally periodic, and the obtained vibration response should also show periodic characteristics. Therefore, the characteristic frequency band can be a non-periodic frequency band in the vibration response. As another example, the characteristic frequency band can be a sudden change frequency band in the vibration response (for example, a frequency band composed of the time point corresponding to the sudden change in vibration amplitude and the surrounding time points). The above description of the characteristic frequency band is for illustrative purposes only and is not intended to limit the scope of this specification.

[0167] In some embodiments, the processing module 140 or the control host 210 may extract a characteristic frequency band by extracting a non-periodic frequency band and / or a sudden change frequency band.

[0168] In some embodiments, the processing module 140 or the control host 210 can determine whether the processed crystal has defects and the types of defects by querying the defect comparison table based on the characteristic frequency band (for example, based on the waveform). The defect comparison table may include a correspondence between different characteristic frequency bands and different defect types, and the defect comparison table can be determined based on historical data and / or prior knowledge. When the processing module 140 or the control host 210 cannot find the corresponding defect type in the defect comparison table, it is determined that the processed crystal does not have defects; when the processing module 140 or the control host 210 finds the corresponding defect type in the defect comparison table, it can be determined that the processed crystal has defects and the types of defects.

[0169] In some embodiments, in response to the absence of defects in the processed crystal, the processing module 140 or the control host 210 may determine that the processing quality is good. For example, it may be determined that its quality score is full marks. In response to the presence of defects in the processed crystal, the processing module 140 or the control host 210 may determine that the processing quality is poor. For example, the processing module 140 or the control host 210 may determine that its quality score does not reach full marks or is 0. In some embodiments, the processing module 140 or the control host 210 may further determine a corresponding quality score based on the defect type. Different defect types correspond to different quality scores, and the correspondence between defect types and quality scores can be determined by the system or manually preset.

[0170] In some embodiments, the processing module 140 or the control host 210 may further determine the processing quality of the processing surface based on the processing surface to which the vibration response belongs (for example, the light output surface and / or the non-light output surface to be processed).

[0171] In some embodiments of this specification, characteristic frequency bands may represent segments where problems are likely to occur during the processing. By identifying the characteristic frequency bands to determine the processing quality, the scope of determining whether a problem occurs can be narrowed. Therefore, by extracting the characteristic frequency bands to determine the processing quality, the efficiency and accuracy of the calculation process can be effectively improved.

[0172] In some embodiments, the processing module 140 or the control host 210 may process the characteristic frequency band using an anomaly recognition model to determine whether the processed crystal has defects.

[0173] In some embodiments, the anomaly recognition model is a machine learning model, for example, a convolutional neural network model, etc. The input of the anomaly recognition model may include a characteristic frequency band, and the output of the anomaly recognition model may include the defect category and the corresponding quality score corresponding to the processed crystal. When the output of the anomaly recognition model is 0, it can be determined that there are no defects in the processed crystal. In some embodiments, the anomaly recognition model can be obtained by training a plurality of fifth training samples with a fifth training label. The training process of the anomaly recognition model is similar to the training process of the first determination model. For more information, see Figure 3 and its related description. In some embodiments, the fifth training sample may include a sample characteristic frequency band, and the fifth training label may be the defect category and the corresponding quality score corresponding to the sample characteristic frequency band. The fifth training label can be obtained based on manual labeling or automatically labeled based on historical data.

[0174] In some embodiments of this specification, the problem of identifying characteristic frequency bands through an anomaly recognition model can utilize the self-learning ability of the machine learning model to find patterns from a large amount of historical data, obtain the relationship between characteristic frequency bands and defect categories, and effectively improve the efficiency of the calculation process and the accuracy of the recognition results.

[0175] Step 530 : In response to the processing quality not meeting the preset condition, stop processing or output a prompt message.

[0176] Preset conditions are conditions for determining processing quality. In some embodiments, the preset conditions may be one or more of the following: defects or damage in the crystal being processed, certain types of defects in the crystal being processed, or a quality score of the crystal being processed falling below a set score threshold. Preset conditions can be set based on actual needs.

[0177] Prompt information is information used to prompt the processing status. In some embodiments, the processing module 140 or the control host 210 can display image or text prompt information through a display device, or can output voice prompt information. In some embodiments, the prompt information may include the type of defects that may appear in the processed crystal. In some embodiments, the prompt information may also include relevant information of the processing process (for example, first surface parameters, second surface parameters, number of grinding circles, polishing pressure or grinding pressure, polishing liquid or grinding liquid, etc.). The processing module 140 or the control host 210 can output prompt information in various feasible ways (for example, in the form of text, image or voice, etc.), which are not limited here.

[0178] In some embodiments, the processing module 140 or the control host 210 can obtain the vibration response and reference vibration response of the polishing disk and / or the grinding disk during processing; in response to the difference between at least one frequency response parameter of the vibration response and the reference vibration response not meeting a preset response condition, the processing is stopped or a prompt message is output.

[0179] The reference vibration response is a standard vibration curve corresponding to the vibration response. The processing module 140 or the control host 210 can determine the processing quality based on a comparison between the vibration response and the reference vibration response. If the difference in at least one frequency response parameter between the vibration response and the reference vibration response is within a parameter threshold, it indicates that the vibration response is similar to the reference vibration response, and the processing is likely to be correct. Otherwise, a problem may exist.

[0180] The reference vibration response can be determined based on historical data. In some embodiments, the reference vibration response can be obtained by fitting historical vibration curves obtained from multiple standard processing processes with similar grinding parameters. The standard processing process can be a process in which the processed crystal is free of defects. For example, the reference vibration response can be obtained by fitting historical vibration curves obtained from multiple standard processing processes with similar grinding parameters.

[0181] Frequency response parameters are characteristic data of the vibration response. They can include the amplitude of the vibration response, the frequency position of peaks and valleys, and the peak-to-peak spacing.

[0182] In some embodiments, the preset response condition may include a difference in at least one frequency response parameter falling within a parameter threshold range. The parameter threshold range corresponds to a threshold range for the difference in the frequency response parameter and can be determined manually or based on historical data. If the difference in at least one frequency response parameter between the vibration response and the reference vibration response falls within the parameter threshold range, it indicates that the vibration response is similar to the reference vibration response, and there may be no problem with the machining process. Otherwise, there may be a problem.

[0183] In some embodiments of this specification, the processing quality of a processed crystal can be quickly and effectively determined by comparing the vibration response with a reference vibration response.

[0184] It should be noted that the above description of processes 300 and 500 is for illustration and purpose only and does not limit the scope of application of this specification. Those skilled in the art may, under the guidance of this specification, make various modifications and alterations to processes 300 and 500. However, such modifications and alterations remain within the scope of this specification.

[0185] While the basic concepts have been described above, it will be apparent to those skilled in the art that the detailed disclosure is merely illustrative and does not limit this specification. Although not explicitly stated herein, various modifications, improvements, and revisions to this specification may be made by those skilled in the art. Such modifications, improvements, and revisions are suggested in this specification and remain within the spirit and scope of the exemplary embodiments of this specification.

[0186] This specification also uses specific terms to describe the embodiments of this specification. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "one embodiment," "an embodiment," or "an alternative embodiment" two or more times in different locations in this specification do not necessarily refer to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of this specification may be appropriately combined.

[0187] In addition, unless expressly stated in the claims, the order of the processing elements and sequences, the use of alphanumeric characters, or the use of other names described in this specification are not intended to limit the order of the processes and methods of this specification. Although the above disclosure discusses some of the invention embodiments currently considered useful through various examples, it should be understood that such details are for illustrative purposes only, and the appended claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that are consistent with the spirit and scope of the embodiments of this specification. For example, although the system components described above can be implemented by hardware devices, they can also be implemented only by software solutions, such as installing the described system on an existing server or mobile device.

[0188] Similarly, it should be noted that, in order to simplify the presentation of this specification and thus facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of this specification sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not imply that the subject matter of this specification requires more features than those recited in the claims. In fact, an embodiment may have fewer features than all of the features of a single disclosed embodiment.

[0189] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0190] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, and documents, cited in this specification is hereby incorporated by reference in its entirety. This includes application history documents that are inconsistent with or conflict with the content of this specification, as well as documents (currently or subsequently attached to this specification) that limit the broadest scope of the claims of this specification. It should be noted that if the descriptions, definitions, and / or terminology used in the accompanying materials are inconsistent or conflicting with the content of this specification, the descriptions, definitions, and / or terminology used in this specification will control.

[0191] Finally, it should be understood that the embodiments described in this specification are intended only to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly described and illustrated in this specification.

Claims

1. A crystal processing method, characterized in that, Including: Obtaining a target light yield and / or a target light output value of a crystal to be processed; Determining a light output surface and a non-light output surface of the crystal to be processed; Determining a first surface parameter of the light output surface and a second surface parameter of the non-light output surface based on the target light yield and / or the target light output value; Processing the crystal to be processed based on the first surface parameter and the second surface parameter.

2. The method according to claim 1, wherein The determining of the light output surface and the non-light output surface of the crystal to be processed includes: Obtaining an initial light yield and / or an initial light output value of each surface of the crystal to be processed; Determining the light output surface and the non-light output surface based on the initial light yield of each surface and the target light yield; and / or Determining the light output surface and the non-light output surface based on the initial light output value of each surface and the target light output value.

3. The method according to claim 1, characterized in that, The determining of the first surface parameter of the light output surface and the second surface parameter of the non-light output surface based on the target light yield and / or the target light output value includes: Obtaining an initial light yield and / or an initial light output value of the light output surface, and an initial surface parameter; Determining the first surface parameter based on the initial light yield of the light output surface, the initial surface parameter, and the target light yield; and / or Determining the first surface parameter based on the initial light output value of the light output surface, the initial surface parameter, and the target light output value.

4. The method according to claim 3, characterized in that The determining of the first surface parameter of the light output surface and the second surface parameter of the non-light output surface based on the target light yield and / or the target light output value includes: Determining the second surface parameter based on the first surface parameter and the target light yield; and / or Determining the second surface parameter based on the first surface parameter and the target light output value.

5. The method according to claim 1, characterized in that The processing of the crystal to be processed based on the first surface parameter and the second surface parameter includes: Determining polishing parameters based on the first surface parameter; Processing the light output surface based on the polishing parameters; And / or, Determining grinding parameters based on the second surface parameter; Processing the non-light output surface based on the grinding parameters.

6. The method according to claim 5, characterized in that, The method includes: Determining the polishing parameters and / or the grinding parameters through a machine learning model, where the grinding parameters include the mesh number of abrasive grains.

7. The method according to claim 1, characterized in that, The processing of the crystal to be processed based on the first surface parameter and the second surface parameter includes: Obtaining the vibration response of a polishing disc and / or a grinding disc during the processing; Determining the processing quality of the light output surface and / or the non-light output surface based on the vibration response.

8. The method according to claim 7, wherein The determining of the processing quality of the light output surface and / or the non-light output surface based on the vibration response includes: Extracting a characteristic frequency band from the vibration response; Identifying the characteristic frequency band to determine whether the processed crystal has defects.

9. The method according to claim 8, wherein The identifying of the characteristic frequency band to determine whether the processed crystal has defects includes: Processing the characteristic frequency band through an anomaly identification model to determine whether the processed crystal has defects, where the anomaly identification model is a machine learning model.

10. The method according to claim 7, characterized in that, The processing of the crystal to be processed based on the first surface parameter and the second surface parameter further includes: In response to the machining quality not meeting the preset conditions, stop machining or output a prompt message.

11. The method according to claim 1, characterized in that, The machining of the crystal to be machined based on the first surface parameter and the second surface parameter includes: Obtain the vibration response and the reference vibration response of the polishing disc and / or the grinding disc during the machining process; In response to the difference between at least one frequency response parameter of the vibration response and the reference vibration response not meeting the preset response conditions, stop machining or output a prompt message.

12. The method according to claim 1, wherein The machining of the crystal to be machined based on the first surface parameter and the second surface parameter includes: Machine the non-light output surface based on the first grinding pressure and obtain the first grinding feedback; In response to the first grinding feedback meeting the first pressurization condition, machine the non-light output surface based on the second grinding pressure and obtain the second grinding feedback; In response to the second grinding feedback meeting the first pressurization condition, machine the non-light output surface based on the third grinding pressure; Wherein, the first grinding pressure < the second grinding pressure < the third grinding pressure.

13. The method according to claim 12, wherein The first grinding feedback and the second grinding feedback include the torque of the motor that drives the grinding disc.

14. The method according to claim 12, wherein The first grinding feedback and the second grinding feedback include the grinding efficiency, which is determined based on the grinding amount and / or the number of grinding circles, and the grinding amount is obtained by a laser rangefinder arranged above the grinding disc.

15. The method according to claim 1, characterized in that, The machining of the crystal to be machined based on the first surface parameter and the second surface parameter includes: Machine the light output surface based on the first polishing pressure and obtain the first polishing feedback; In response to the first polishing feedback meeting the second pressurization condition, machine the light output surface based on the second polishing pressure and obtain the second polishing feedback; In response to the second polishing feedback meeting the second pressurization condition, machine the light output surface based on the third polishing pressure; Wherein, the first polishing pressure < the second polishing pressure < the third polishing pressure.

16. The method according to claim 1, characterized in that, The method further includes: Perform pretreatment on the initial processing material to obtain the crystal to be machined.

17. A crystal processing system, characterized in that, Including: An input module configured to obtain the target light yield and / or the target light output value of the crystal to be machined; A determination module configured to determine the light output surface and the non-light output surface of the crystal to be machined; A processing module configured to determine the first surface parameter of the light output surface and the second surface parameter of the non-light output surface based on the target light yield and / or the target light output value; A machining module configured to machine the crystal to be machined based on the first surface parameter and the second surface parameter.

18. A crystal processing system, characterized in that, Including: A control host and a machining device, the control host being configured to: Obtain the target light yield and / or the target light output value of the crystal to be machined; Determine the light output surface and the non-light output surface of the crystal to be machined; Determine the first surface parameter of the light output surface and the second surface parameter of the non-light output surface based on the target light yield and / or the target light output value; Control the machining device to machine the crystal to be machined based on the first surface parameter and the second surface parameter.

19. The system according to claim 18, wherein The machining device includes: an upper grinding disc and a lower grinding disc, and the crystal to be machined is placed between the upper grinding disc and the lower grinding disc; The upper grinding disc is connected to the rotating shaft; At least one vibration sensor is disposed on the upper side surface of the upper grinding disc, and the vibration sensor is configured to obtain the vibration response of the upper grinding disc.

20. The system according to claim 18, wherein The system further includes a roughness detection device configured to detect the roughness of the crystal to be processed.

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