Linking a semiconductor component with nanowires

Abstract

The invention relates to an arrangement (1) comprising: ■ a semiconductor component (3) having a first top side contact (9) on a top side (7), ■ a connecting element (4) comprising an electrically insulating central layer (11), wherein the connecting element (4) comprises a first electrically and / or thermally conductive coating (16) in a first portion (12) on an underside (14) of the central layer (11), wherein the connecting element (4) comprises a second electrically and / or thermally conductive coating (17) on a top side (15) of the central layer (11), said second coating being at least partially formed in the first portion (12) of the connecting element (4), wherein the first coating (16) and the second coating (17) are electrically and / or thermally conductively connected to one another by way of vias (19) passing through the central layer (11), ■ a contact body (5), wherein the first coating (16) of the connecting element (4) is electrically and / or thermally conductively connected to the first top side contact (9) of the semiconductor component (3) by way of a first plurality of nanowires (20), and wherein the second coating (17) of the connecting element (4) is electrically and / or thermally conductively connected to the contact body (5) by way of a second plurality of nanowires (21).

Description

[0001] Connecting a semiconductor component with nanowires

[0002] The invention relates to an arrangement comprising a semiconductor component connected to a contact body, such as a heat sink. The semiconductor component can be, for example, a MOSFET transistor.

[0003] The development of modern inverters with power semiconductors in areas such as green energy, EV, solar, and industrial motors is rapidly shifting from IGBT / Si-based technology to SiC MOSFET-based technology or to GaN transistor-based and GaN MOSFET-based technology. The advantages of these new technologies are not only the higher temperatures that the new semiconductor materials can withstand compared to Si. Another advantage is the higher switching frequencies enabled by these semiconductor components. With the higher switching frequencies, not only can the ideal sine wave be better reproduced, but the additional capacitances and inductances required for resonant circuits can also be reduced.

[0004] Current joining methods for power semiconductors include soldering, silver sintering, and bond wire technology. Solder has the advantage that the chip is immersed in a paste-like bonding agent under only slight pressure. The silver sintering process, on the other hand, requires a joining pressure of approximately 20 MPa. As long as the joining pressure can be applied across the entire surface of the semiconductor material, there is only a low risk of fracture in the semiconductor material. Therefore, no silver sintering is performed on the top surface.

[0005] The advantages of SiC applications are offset by new challenges arising from the different material properties of SiC compared to Si. SiC is significantly stiffer and more fragile than Si. The elastic properties of Si enable the use of simple copper / aluminum oxide / copper-based sandwiches to enable electrical contacting from the full-surface underside of a Si chip. Due to the low temperatures in Si applications, Si chips can generally be contacted from the top with a sufficient number of bond wires. Furthermore, the bond wires can also assist in cooling the semiconductor component. With the switch to SiC, cooling using a bond wire system alone is no longer possible in many relevant cases.The increased power density in a SiC MOSFET or a SiC diode, for example, often requires large-area heat dissipation on both sides for sufficient cooling. However, full-surface contacting of the SiC semiconductor surface is difficult for various reasons. First, the surface of the semiconductor component often has insulating elements made of polyimide, for example, so-called guard rings. These guard rings serve, for example, to reduce a voltage difference between the source and drain contacts and ensure that no short circuits occur. On the other hand, a gate contact is often located on the top side of MOSFET semiconductor components. This contact is needed to control the transistor and must be insulated from the other contact surfaces. In the standard process, this gate is contacted with bond wires.In such a case, full-surface connection is difficult to cool the top side of the semiconductor component due to the guard rings and / or the gate. The heat sink to be applied must therefore often have cutouts for the guard rings and / or the gate. Due to the joining tolerances that usually have to be taken into account, these cutouts must be generously dimensioned. If this partially covering heat sink is then pressed onto the SiC semiconductor component, zones inevitably arise in which no joining pressure is exerted on the SiC semiconductor component. The joining pressure of, for example, 20 MPa is applied adjacent to these zones. This leads to high fracture rates. Another disadvantage is that, in addition to the heat stress during the soldering or sintering process, the component must also undergo another final contacting process, for example, to contact the gate with bond wires.

[0006] The above discussion primarily focused on the challenges of contacting SiC semiconductor components such as SiC MOSFETs. Similar difficulties also arise with other materials, such as GaN. Contacting difficulties can also occur with other semiconductor components. In general, difficulties often arise when a semiconductor component is to be electrically and / or thermally connected to a contact body. This is primarily reflected in the fact that the connection does not hold reliably.

[0007] The object of the present invention is to connect a semiconductor component to a contact body in a particularly reliable manner.

[0008] These objects are achieved by the arrangement according to independent claim 1. Further advantageous embodiments are specified in the dependent claims. The features presented in the claims and in the description can be combined with one another in any technologically expedient manner.

[0009] According to the invention, an arrangement is presented which comprises:

[0010] ■ a semiconductor component having a first top contact on a top side,

[0011] ■ a connecting element which has an electrically insulating central layer, wherein the connecting element has a first electrically and / or thermally conductive coating within a first section on an underside of the central layer, wherein the connecting element has a second electrically and / or thermally conductive coating on an upper side of the central layer, which is formed at least partially in the first section of the connecting element, wherein the first coating and the second coating are electrically and / or thermally conductively connected to one another via vias which pass through the central layer,

[0012] ■ a contact body, wherein the first coating of the connecting element is electrically and / or thermally conductively connected to the first top contact of the semiconductor component via a first plurality of nanowires, and wherein the second coating of the connecting element is electrically and / or thermally conductively connected to the contact body via a second plurality of nanowires.

[0013] The described arrangement comprises a semiconductor component. This can be an electronic component such as a transistor, a diode, a computer chip, a power microcontroller, a microcontroller, a graphics controller, a power module, or a processor. The semiconductor component can in particular be a MOSFET. The semiconductor component can also be referred to as a semiconductor chip. The semiconductor component can, for example, be a component of a power computer. The invention described herein relates to the question of how the semiconductor component can be contacted. The mode of operation of the semiconductor component is not important here. It is sufficient that the semiconductor component has a contact on its top side. In contrast to the contacts described below, this contact is described as the first top side contact. However, this designation does not necessarily mean that there is another top side contact.For the sake of linguistic simplicity, the first top-side contact is referred to as the first top-side contact, particularly to distinguish it from the second top-side contact described below. The first top-side contact is preferably formed from a metal, for example, copper, silver, or gold. The first top-side contact can also be formed as a layer system composed of multiple metals.

[0014] Many semiconductor components have multiple contacts. Diodes, for example, typically have two contacts, transistors three. However, the invention described herein can already be used advantageously if a single contact is contacted as described herein. Whether there are additional contacts and whether these are contacted using known measures is irrelevant to the invention. For example, the invention can also be applied to semiconductor components that have more than one power contact, particularly in GaN semiconductor components. One of the power contacts can then be the first top-side contact described herein. A further power contact can be contacted, for example, via corresponding additional coatings of the central layer.

[0015] The arrangement further comprises a contact body. The contact body is electrically and / or thermally conductively connected to the first top contact. The contact body preferably serves to cool the semiconductor component. In this respect, the contact body can also be referred to as a heat sink. However, it is alternatively or additionally possible for the contact body to serve as an electrical contact. Generally, the purpose of the contact body is irrelevant to the invention described herein. Therefore, the term "contact body" is generally used herein. The heat sink is preferably formed from a metal, for example, copper.

[0016] To ensure that the contact body is connected particularly reliably to the first top-side contact, the connecting element is provided. The connecting element is arranged between the semiconductor component and the contact body. On the one hand, the connecting element rests against the top side of the semiconductor component and on the other hand against the underside of the contact body. The connecting element is connected to the top side of the semiconductor component and to the underside of the contact body. The connecting element can thus be considered a mediator of the connection.

[0017] The connecting element has an electrically insulating central layer. The central layer is preferably flexible. The electrically insulating layer essentially electrically insulates the top and bottom of the connecting element from one another. Electrically conductive coatings can be used to make the top and bottom surfaces electrically and / or thermally conductive in certain areas. Targeted vias penetrating the central layer can connect the coatings on the top and bottom of the connecting element in an electrically and / or thermally conductive manner. Depending on the application, the coatings on the top and bottom surfaces can be positioned and connected to one another in different ways. In this respect, the electrically insulating design of the central layer enables great flexibility.

[0018] The connecting element is preferably an elastic and plastic insulating body that is partially clad on both sides with an electrically and / or thermally conductive material such as copper. The cladding preferably follows the layout of the semiconductor component. It can provide sufficient material for electrical and / or thermal conduction. The central layer can be referred to as the insulating body. Tiny, mass-produced holes can be placed through the insulating body, which are then filled with copper, for example, and locally connect the top and bottom of the connecting element in an electrically and / or thermally conductive manner. These are the vias. These can provide material for electrical and / or thermal conduction.

[0019] In the most general case considered here initially, it is sufficient that the connecting element has a first electrically and / or thermally conductive coating on an underside of the central layer and the connecting element has a second electrically and / or thermally conductive coating on an upper side of the central layer. The first coating is formed within a first region. This means that the first coating is formed in part of the first section or in the entire first section, but does not extend beyond the first section. The first section is part of the connecting element. This is to be understood as meaning that the first section forms part of the surface of the connecting element. The second coating is formed at least partially in the first section of the connecting element. It follows that the first coating and the second coating overlap one another.In principle, the first coating and the second coating are separated from each other by the electrically insulating central layer. This separation is overcome locally by electrically and / or thermally conductively connecting the first coating and the second coating via vias that penetrate the central layer. This is possible because the first coating and the second coating overlap as described. The vias are preferably provided in an overlap region between the first coating and the second coating.

[0020] The first coating is preferably made of a metal, for example, copper. The second coating is preferably made of a metal, for example, copper. The vias are preferably made of a metal, for example, copper.

[0021] The first coating preferably has a layer thickness in the range of 5 to 70 μm, for example 17 μm. The second coating preferably has a layer thickness in the range of 10 to 300 μm, for example 70 μm. The first coating is preferably thinner than the second coating, preferably by at least a factor of 2, particularly preferably by at least a factor of 5. This configuration allows the connecting element to particularly well compensate for differing thermal expansions of the semiconductor component and the contact body.

[0022] In general, it is preferred that coatings on the underside of the central layer have a layer thickness in the range of 5 to 70 µm, for example, 17 µm, and / or that coatings on the top side of the central layer have a layer thickness in the range of 10 to 300 µm, for example, 70 µm. The coatings on the underside of the central layer are preferably thinner than the coatings on the top side of the central layer, preferably by at least a factor of 2, more preferably by at least a factor of 5.

[0023] An electrically and / or thermally conductive connection is formed between the first top contact of the semiconductor component and the contact body via the connecting element. For this purpose, the first top contact is connected to the first coating, the first coating is connected to the second coating via the vias, and the second coating is connected to the contact body. The materials involved in these connections are electrically and / or thermally conductive.

[0024] The first coating of the connecting element is electrically and / or thermally conductively connected to the first top contact of the semiconductor component via a first plurality of nanowires. The second coating of the connecting element is electrically and / or thermally conductively connected to the contact body via a second plurality of nanowires.

[0025] These connections are formed via a respective plurality of nanowires. The following statements apply to the first plurality of nanowires and the second plurality of nanowires, but also to the further plurality of nanowires introduced below. A nanowire is understood here to be any material body with a wire-like shape and a size in the range of a few nanometers to a few micrometers. A nanowire can, for example, have a circular, oval, or polygonal base. In particular, a nanowire can have a hexagonal base.

[0026] Preferably, all nanowires are made of the same material. It is particularly preferred that the nanowires be made of the same material as the surface connected via the nanowires. The fact that the nanowires are involved in the electrically and / or thermally conductive connection implies that the nanowires are electrically and / or thermally conductive. The nanowires are preferably made of a metal, for example, copper.

[0027] The nanowires preferably have a length in the range of 100 nm [nanometers] to 100 μm [micrometers], in particular in the range of 500 nm to 60 μm. Furthermore, the nanowires preferably have a diameter in the range of 10 nm to 10 μm, in particular in the range of 30 nm to 2 μm. The term "diameter" refers to a circular base area; if the base area deviates from this, a comparable definition of a diameter is to be applied. It is particularly preferred that all nanowires used have the same length and diameter.

[0028] The nanowires are preferably perpendicular to the surface connected via the nanowires.

[0029] Because the nanowires are very small, a large number of nanowires can be used. This results in a comparatively large contact area. The connection via nanowires is therefore particularly well electrically and / or thermally conductive. The connection via nanowires can be formed with little effort. Various possibilities are known from the state of the art, all of which can be used here. In particular, it is sufficient to provide the nanowires on one of the joining partners, for example, on the coatings of the central layer of the connecting element, for example by galvanic growth. It is not required, but possible, that nanowires are also provided on the contact surfaces of the respective joining partners. The connection can be formed by simply bringing the joining partners together. Applying pressure and heating are optional.Heating to at least 90 to 150°C is preferred, especially if the nanowires are provided on only one of the joining partners to be joined. Alternatively, the joining partners can be glued together, with the plurality of nanowires establishing electrical and thermal contact through the adhesive, and the adhesive providing the mechanical connection.

[0030] In a preferred embodiment of the arrangement, the semiconductor component is formed with SiC and / or GaN.

[0031] By using SiC and / or GaN, the advantages of corresponding semiconductor components known from the prior art can be exploited. These advantages were described in the introduction to the prior art. The use of the connecting element can overcome the difficulties arising from the use of these materials. In particular, the connecting element can provide particularly good heat dissipation. This enables the semiconductor component to be operated at particularly high power.

[0032] Alternatively to the present embodiment, the semiconductor component can also be formed with Si, for example.

[0033] In a further preferred embodiment of the arrangement, the semiconductor component and the contact body have different thermal expansion coefficients from one another.

[0034] One of the difficulties with the use of SiC and / or GaN is thermal expansion. For example, with Si, this is less of an issue, since Si semiconductor components typically operate at lower temperatures. Thermal expansion is particularly critical when the interconnected components have different thermal expansion coefficients, as in this embodiment. However, the connecting element can compensate for differing thermal expansions of the semiconductor component and the contact body. This is due, on the one hand, to the nanowires and, on the other, to the electrically insulating central layer with the vias. Compared to a pure copper connection, for example, this design is generally considerably more expandable.The system created with the connecting element nevertheless offers a continuous conduction path from the first top contact to the contact body thanks to the central layer, which serves as an elastic inner plastic insulating body with vias. The thickness of the central layer can be adjusted to the requirements of the application. This allows for optimal electrical and / or thermal conductivity on the one hand, and optimal elasticity on the other, to be achieved in order to compensate for the difference in thermal expansion between the semiconductor component and the contact body, as well as to compensate for mechanical stresses in the vertical plane to the joining surface.

[0035] The greater the thermal expansion coefficients of the semiconductor component and the contact body differ from each other, the more pronounced the advantages of the invention described herein become. It is therefore preferred that the thermal expansion coefficients of the semiconductor component and the contact body differ from each other by at least 50%.

[0036] The thermal expansion coefficient of a semiconductor component refers to the semiconductor component as a whole. For example, if the semiconductor component is a SiC chip or a GaN chip, the thermal expansion coefficient of the semiconductor component is the thermal expansion coefficient of SiC or GaN, respectively.

[0037] In a further preferred embodiment of the arrangement, the central layer of the connecting element has a thickness in the range of 5 to 60 µm.

[0038] It turns out that these thicknesses are particularly useful.

[0039] In a further preferred embodiment, the arrangement further comprises a substrate, wherein the semiconductor component has a bottom contact on a bottom side, which is electrically and / or thermally conductively connected to a first contact surface of the substrate.

[0040] In this embodiment, the semiconductor component is contacted on both sides, as is desired in many applications. For this purpose, the semiconductor component has a bottom contact in addition to the first top contact. The function of the individual contacts is irrelevant for the invention described here. Due to the double-sided contact, the semiconductor component in this embodiment can be understood as being embedded between two elements (the substrate and the contact body). The substrate can, but does not have to, be designed differently than the contact body. It is also possible for the semiconductor component to be embedded between two similar elements, one of which is referred to here as the contact body and one as the substrate. The substrate can also be generally referred to as the second contact body when the contact body is referred to as the first contact body.

[0041] Contacting on the underside is achieved by electrically and / or thermally connecting the semiconductor component with the underside contact to a first contact surface of a substrate. The further configuration of the substrate is irrelevant here. For example, it can be a simple Si substrate. The underside contact is preferably formed from a metal, for example, copper, silver, or gold. The underside contact can also be formed as a layer system of multiple metals.

[0042] To distinguish it from the second contact surface described below, the contact surface described here is referred to as the first contact surface. However, this designation does not necessarily imply that there is another contact surface. The first contact surface is referred to as such merely for the sake of linguistic simplicity.

[0043] The underside contact is preferably electrically and / or thermally conductively connected to the first contact area of ​​the substrate via a fourth plurality of nanowires. The above statements regarding the nanowire connection apply accordingly to this connection. By using nanowires to make contact with the underside contact, not only can the generally known advantages of such a connection be utilized in this respect, but the semiconductor component can also be connected to both the contact body and the substrate in a single, simple joining step. This facilitates manufacturing. In particular, compared to the prior art, not only can the wire bonding process be eliminated, but the joining processes can also be accelerated by up to 50%. The underside contact can also be electrically and / or thermally conductively connected to the first contact area of ​​the substrate via a further connecting element.The connecting element can be connected to the bottom contact and / or to the first contact surface of the substrate via a respective plurality of nanowires. The further connecting element can be designed like the connecting element described herein or differently, for example, completely electrically conductive. During the manufacture of the arrangement, the components to be connected (substrate, semiconductor component, and contact body) can be pressed together. Force can be introduced into the semiconductor component across its entire surface on both sides. This reduces the risk of the semiconductor component breaking during joining. Furthermore, this embodiment enables the semiconductor component to be cooled particularly efficiently on both sides.

[0044] In a further preferred embodiment of the arrangement, the semiconductor component further has a second top-side contact on the top side, wherein the connecting element has a third electrically and / or thermally conductive coating in a second section arranged next to the first section on the underside of the central layer, wherein the first coating and the third coating are electrically insulated from one another, and wherein the third coating of the connecting element is electrically and / or thermally conductively connected to the second top-side contact of the semiconductor component via a third plurality of nanowires.

[0045] This embodiment is more specific than the general case described above in that it now also utilizes the possibility of having multiple coatings on one side of the central layer of the connecting element. For this purpose, the connecting element has, in addition to the first coating, also the third coating on its underside. These are arranged side by side and electrically insulated from each other. This implies that the first coating and the third coating are spaced apart from each other.

[0046] The connecting element is connected to the second top-side contact via the third coating. This connection is also formed by a plurality of nanowires. The above statements regarding the nanowire connection apply accordingly to this connection. The second top-side contact can be contacted via this connection. This is possible by contacting the third coating of the connecting element. How and where this occurs is generally irrelevant. A conduction path from the second top-side contact initially runs through the third coating. The conduction path can run entirely along the underside of the central layer. However, there is also nothing to prevent the conduction path from the second top-side contact from being routed to the top of the central layer via vias. This can be done as an alternative to or in addition to a route along the underside.Theoretically, the conduction path can switch back and forth between the top and bottom sides as often as desired. A practical example of relevance is a configuration in which the connecting element has a fourth electrically and / or thermally conductive coating spaced from the second coating, which overlaps the third coating, and which is electrically and / or thermally conductively connected to the third coating via vias penetrating the central layer. In this case, the second top-side contact can be contacted via the top side of the connecting element.

[0047] In general, the connecting element offers a variety of different ways in which conduction paths can be routed from a contact on the top side of the semiconductor component. For this purpose, the connecting element can also be designed in multiple layers. For example, the connecting element can have two or more central layers, with coatings also being arranged between the two central layers. This allows more than two conduction paths to be routed in parallel and electrically insulated from one another.

[0048] In many applications it is desired that only the first top contact is electrically connected to the contact body, while the second top contact is electrically insulated from the contact body. This is also possible if the conduction path from the second top contact is partially routed on the top side of the connecting element. This can be achieved, for example, simply by the contact body having a recess in the region of the conduction path or not extending into this area at all. In this case, the previously described advantages of a full-surface design of the contact body are partially lost. However, compared to prior art solutions, such a solution is still advantageous. One of the major advantages of the invention in this embodiment is that bond wires can be dispensed with, so that a correspondingly large amount of space does not have to be left free with the contact body.

[0049] For example, the connecting element can be designed such that a conduction path from the first top-side contact of the semiconductor component, after passing through the central layer, is forwarded via the vias on the top side of the central layer, while a conduction path from the second top-side contact is routed on the underside of the central layer. This ensures that the second top-side contact is electrically isolated from the first top-side contact.

[0050] The second top contact is preferably formed from a metal, for example, copper, silver, or gold. The second top contact can also be formed as a layer system of multiple metals. The third coating is preferably formed from a metal, for example, copper.

[0051] The third coating preferably has a layer thickness in the range of 5 to 70 μm, for example, 17 μm. The third coating preferably has the same layer thickness as the first coating. Preferably, the first coating and the third coating are each thinner than the second coating, preferably by at least a factor of 2, particularly preferably by at least a factor of 5.

[0052] In this embodiment, the semiconductor component has three contacts. It can be configured, for example, as a MOSFET. In this case, the first top contact can be, for example, a source contact, the second top contact a gate contact, and the bottom contact a drain contact. However, this configuration of the contacts is not important here. In this embodiment, the design of the semiconductor component is also generally unimportant.

[0053] In a further preferred embodiment of the arrangement, the contact body is arranged at least partially above the first top contact and at least partially above the second top contact. It is particularly advantageous that the third coating is electrically insulated upwards by the electrically insulating central layer. The contact body can therefore also be arranged above the second top contact without being electrically conductively connected to it. This solves the problem described above with regard to the prior art of configurations in which the gate contact is contacted as a second top contact with bond wires. In such configurations, the contact body can only be formed laterally next to the gate contact in order to leave space for the bond wires. The present embodiment, in contrast, allows a full-surface connection of the contact body to the semiconductor component.This allows for uniform contact pressure to be applied during assembly manufacturing. This reduces stress and prevents the risk of the semiconductor component breaking during bonding of the contact body. Furthermore, alignment of the joining partners is made easier during joining because all components to be joined (substrate, semiconductor component, and contact body) can be the same size.

[0054] The described invention also allows the contact body, which preferably dissipates heat, to be formed over the entire surface of the semiconductor component. This allows a particularly large amount of material to be available for heat dissipation.

[0055] In a further preferred embodiment of the arrangement, an electrically insulating separating element is arranged on the top side of the semiconductor component between the first top side contact and the second top side contact of the semiconductor component.

[0056] The electrically insulating separating element is preferably made of polyimide. The separating element is particularly preferably designed as a guard ring. Such a design is known per se from the prior art. However, in combination with the invention described herein, this offers the advantage that the separating element can be pressed against the electrically insulating central layer of the connecting element during joining. Even if this results in damage to the separating element and / or the central layer, the electrically insulating design of the central layer would still ensure the electrical insulation between the first top-side contact and the second top-side contact.

[0057] The use of nanowires for the connections makes it possible to compensate for irregularities, such as those that may be caused by separating elements. This is especially true in the preferred case where no nanowires or electrically and / or thermally conductive coatings are present in the area of ​​the separating element on the connecting element.

[0058] In a further preferred embodiment of the arrangement, the second coating of the connecting element also extends into the second section of the connecting element.

[0059] Due to the electrically insulating design of the central layer, the second coating on the top side of the central layer does not need to be limited to the first section. Instead, the second coating can also extend into the area above the second top-side contact without being electrically connected to it. This allows for a particularly large surface area for heating and for connecting the contact body.

[0060] In a further preferred embodiment of the arrangement, the second section of the connecting element extends laterally beyond the semiconductor component.

[0061] In this embodiment, the second top contact can be contacted particularly well – even if the contact body extends over the entire extent of the semiconductor component. For this purpose, the second section with the second coating extends laterally into an area adjacent to the semiconductor component.

[0062] In this embodiment, too, it is fundamentally irrelevant whether the electrically and / or thermally conductive connection to the second top-side contact is routed only along the underside of the central layer or also partially along the top side. A particularly simple configuration is one in which the electrically and / or thermally conductive connection to the second top-side contact is routed only along the underside of the central layer. In this case, the third coating is sufficient to connect the second top-side contact. However, in this embodiment, too, there is nothing to prevent the conductive path from the second top-side contact from being routed via vias to the top side of the central layer, provided that electrical insulation from the contact body is ensured.

[0063] In a further preferred embodiment of the arrangement, the third coating of the connecting element is connected to a second contact surface of the substrate laterally next to the semiconductor component.

[0064] The second contact surface is preferably electrically insulated from the first contact surface. This prevents a short circuit between the second top contact and the bottom contact, which is desirable for many applications. The second top contact can be contacted via the second contact surface.

[0065] Alternatively or additionally, the connecting element can also be designed such that the first top contact can be contacted laterally next to the semiconductor component, for example via a third contact surface of the substrate.

[0066] As an alternative to the present embodiment, the second top-side contact is not connected to a second contact surface of the substrate, but rather to a contact surface of another element. The second top-side contact can also be contacted in this way.

[0067] The invention is explained in more detail below with reference to the figures. The figures show a particularly preferred embodiment, to which the invention is not limited, however. The figures and the proportions depicted therein are merely schematic. They show:

[0068] Fig. 1 : an arrangement according to the invention.

[0069] Fig. 1 shows an arrangement 1 comprising a substrate 2, a semiconductor component 3, a connecting element 4, and a contact body 5. The semiconductor component 3 and the contact body 5 have different thermal expansion coefficients.

[0070] The semiconductor component 3 has a first top contact 9 and a second top contact 10 on a top side 7, as well as a bottom contact 8 on a bottom side 6. The semiconductor component 3 is formed with SiC and / or GaN. The semiconductor component 3 can be, for example, a MOSFET transistor. In this case, the first top contact 9 can be a source contact, the second top contact 10 a gate contact, and the bottom contact 8 a drain contact.

[0071] The connecting element 4 has an electrically insulating central layer 11. The central layer 11 of the connecting element 4 has a thickness in the range of 5 to 60 μm. In a first section 12, the connecting element 4 has, on an underside 14 of the central layer 11, a first electrically and / or thermally conductive coating 16 and a third electrically and / or thermally insulating coating 18. On an upper side 15 of the central layer 11, the connecting element 4 has a second electrically and / or thermally conductive coating 17, which extends partially into the first section 12 of the connecting element 4 and beyond a second section 13 of the connecting element 4. The first coating 16 and the second coating 17 are electrically and / or thermally conductively connected to one another via vias 19, which penetrate the central layer 11.The first coating 16 and the third coating 18 are electrically insulated from each other.

[0072] The first coating 16 of the connecting element 4 is electrically and / or thermally conductively connected to the first top contact 9 of the semiconductor component 3 via a first plurality of nanowires 20. The second coating 17 of the connecting element 4 is electrically and / or thermally conductively connected to the contact body 5 via a second plurality of nanowires 21. The third coating 18 of the connecting element 4 is electrically and / or thermally conductively connected to the second top contact 10 of the semiconductor component 3 via a third plurality of nanowires 22. The bottom contact 8 of the semiconductor component 3 is electrically and / or thermally conductively connected to a first contact area 25 of the substrate 2 via a fourth plurality of nanowires 23.

[0073] A guard ring is arranged as an electrically insulating separating element 24 on the top side 7 of the semiconductor component 3 between the first top side contact 9 and the second top side contact 10 of the semiconductor component 3. Further separating elements 24 of this type are formed on the edge of the semiconductor component 3. The contact body 5 is arranged partially above the first top side contact 9 and partially above the second top side contact 10.

[0074] The second section 13 of the connecting element 4 extends laterally to the right beyond the semiconductor component 3. This makes it possible for the third coating 18 of the connecting element 4 to be connected to a second contact surface 26 of the substrate 2 laterally next to the semiconductor component 3. In this way, the second top contact 10 can be contacted.

[0075] List of reference symbols

[0076] 1 arrangement

[0077] 2 Substrat

[0078] 3 Semiconductor component

[0079] 4 Connecting element

[0080] 5 contact bodies

[0081] 6 Bottom of the semiconductor component

[0082] 7 Top side of the semiconductor device

[0083] 8 Underside contact

[0084] 9 first top contact

[0085] 10 second top contact

[0086] 11 central layer

[0087] 12 first section

[0088] 13 second section

[0089] 14 Bottom of the central layer

[0090] 15 Top of the central layer

[0091] 16 first electrically conductive coating

[0092] 17 second electrically conductive coating

[0093] 18 third electrically conductive coating

[0094] 19 Through-hole plating

[0095] 20 first variety of nanowires

[0096] 21 second multitude of nanowires

[0097] 22 third variety of nanowires

[0098] 23 fourth variety of nanowires

[0099] 24 Separator

[0100] 25 first contact surface

[0101] 26 second contact surface

[0102] 27 fifth variety of nanowires

Claims

Claims 1. Arrangement (1) comprising: ■ a semiconductor component (3) which has a first top contact (9) on a top side (7), ■ a connecting element (4) which has an electrically insulating central layer (11), wherein the connecting element (4) has a first electrically and / or thermally conductive coating (16) within a first section (12) on an underside (14) of the central layer (11), wherein the connecting element (4) has a second electrically and / or thermally conductive coating (17) on an upper side (15) of the central layer (11), which is formed at least partially in the first section (12) of the connecting element (4), wherein the first coating (16) and the second coating (17) are electrically and / or thermally conductively connected to one another via vias (19) which pass through the central layer (11), ■ a contact body (5), wherein the first coating (16) of the connecting element (4) is electrically and / or thermally conductively connected to the first top contact (9) of the semiconductor component (3) via a first plurality of nanowires (20), and wherein the second coating (17) of the connecting element (4) is electrically and / or thermally conductively connected to the contact body (5) via a second plurality of nanowires (21).

2. Arrangement (1) according to claim 1, wherein the semiconductor component (3) is formed with SiC and / or GaN.

3. Arrangement (1) according to one of the preceding claims, wherein the semiconductor component (3) and the contact body (5) have different thermal expansion coefficients.

4. Arrangement (1) according to one of the preceding claims, wherein the central layer (11) of the connecting element (4) has a thickness in the range of 5 to 60 µm.

5. Arrangement (1) according to one of the preceding claims, further comprising a substrate (2), wherein the semiconductor component (3) has on a bottom side (6) a bottom contact (8) which is electrically and / or thermally conductively connected to a first contact surface (25) of the substrate (2).

6. Arrangement (1) according to one of the preceding claims, wherein the semiconductor component (3) further has a second top contact (10) on the top side (7), wherein the connecting element (4) has a third electrically and / or thermally conductive coating (18) in a second section (13) arranged next to the first section (12) on the underside (14) of the central layer (11), wherein the first coating (16) and the third coating (18) are electrically insulated from one another, and wherein the third coating (18) of the connecting element (4) is electrically and / or thermally conductively connected to the second top contact (10) of the semiconductor component (3) via a third plurality of nanowires (22).

7. Arrangement (1) according to claim 6, wherein an electrically insulating separating element (24) is arranged on the top side (7) of the semiconductor component (3) between the first top side contact (9) and the second top side contact (10) of the semiconductor component (3).

8. Arrangement (1) according to claim 6 or 7, wherein the second coating (17) of the connecting element (4) also extends into the second portion (13) of the connecting element (4).

9. Arrangement (1) according to one of claims 6 to 8, wherein the contact body (5) is arranged at least partially above the first top contact (9) and at least partially above the second top contact (10).

0. Arrangement (1) according to one of claims 6 to 9, wherein the third coating (18) of the connecting element (4) is connected to a second contact surface (26) of the substrate (2) laterally next to the semiconductor component (3).

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