Material for forming a patterning coating comprising a cyclic moiety and devices incorporating the same

Abstract

A compound comprising: a phosphazene moiety, and a fragment represented by Chemical Formula (F-1): (F-1) wherein: * represents attachment to the phosphazene moiety; Cy represents a cyclic moiety; RL represents a linker moiety; Z 1 , Z 2 , and Z 4 each represent a ring atom of the cyclic moiety, and is a carbon (C) atom. An opto-electronic device comprising a compound comprising a core moiety and at least one ligand moiety bonded to the core moiety, the ligand moiety comprising a cyclic moiety.

Description

MATERIAL FOR FORMING A PATTERNING COATING COMPRISING ACYCLIC MOIETY AND DEVICES INCORPORATING THE SAMERELATED APPLICATIONS

[0001] The present application claims the benefit of priority to U.S. Provisional Application No. 63 / 614,875, filed December 26, 2023, and U.S. Provisional Application No. 63 / 657,735, filed June 7, 2024, the contents of each of which are incorporated herein by reference in their entirety.TECHNICAL FIELD

[0002] The present disclosure relates to layered semiconductor devices, and in some non- limiting examples, to a layered opto-electronic device having a plurality of sub-pixel emissive regions and a plurality of light transmissive regions, each sub-pixel comprising first and second electrodes separated by a semiconductor layer, in which at least one of the electrodes, a conductive coating electrically coupled therewith, and transmissive regions, may be patterned by depositing a patterning coating that may at least one of act, and be, a nucleation inhibiting coating for patterning at least one conductive deposited material such as may be deposited during a device fabrication process, to form such an electrode, and conductive coating, and to preclude deposition of such deposited material to form such transmissive region(s).BACKGROUND

[0003] In an opto-electronic device such as an organic light emitting diode (OLED), at least one semiconducting layer comprising an emissive layer may be disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode may be electrically coupled with a power source and respectively generate holes and electrons that migrate toward each other through the at least one semiconducting layer. When a pair of holes and electrons combine, light, in the form of a photon, may be emitted by the emissive layer.

[0004] OLED display panels, such as an active-matrix OLED (AMOLED) panel, may comprise a plurality of pixels, each pixel further comprising a plurality of (including without limitation, one of three, and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by one of three, and four, different colors, including without limitation, R(ed), G(reen), and B(lue). Each (sub-) pixel mayhave an associated emissive region, comprising a stack of an associated pair of electrodes and at least one semiconducting layer between them. In some non-limiting examples, each sub-pixel of a pixel may emit light, including without limitation, photons, that have an associated wavelength spectrum characterized by a given color, including without limitation, one of, R(ed), G(reen), B(lue), and W(hite). In some non-limiting examples, the (sub-) pixels may be selectively driven by a driving circuit comprising at least one thin- film transistor (TFT) structure electrically coupled with conductive metal lines, in some non-limiting examples, within a substrate upon which the electrodes and the at least one semiconducting layer are deposited. Various coatings (layers) of such panels may, in some non-limiting examples, be formed by vacuum-based deposition processes.

[0005] In AMOLED panels, light may be emitted by a sub-pixel when a voltage is applied across an anode and a cathode of the sub-pixel. By controlling the voltage applied across the anode and the cathode, it may be possible to control the emission of light from each sub- pixel of such panel. In cases where a common cathode is provided across multiple sub- pixels, the voltage across the anode and the cathode in each sub-pixel may be controlled by modulating the voltage of the anode. In some non-limiting examples, the adjacent anodes may be spaced apart in a lateral aspect, and at least one non-emissive region may be provided therebetween.

[0006] In some non-limiting examples, there may be an aim to provide a conductive deposited layer in a pattern for each (sub-) pixel of the panel across at least one of a: lateral, and cross-sectional, aspect thereof, by selective deposition of a closed coating of a conductive deposited material, to form one of: a device feature, including without limitation, an electrode, a conductive element electrically coupled therewith, and a region that is substantially devoid of the deposited material, including without limitation, to define a transparent region of the device, during the OLED manufacturing process.

[0007] One method for doing so, in some non-limiting examples, involves the interposition of a fine metal mask (FMM) during deposition of the deposited material. However, such deposited materials typically have substantially high evaporation temperatures, which impacts at least one of the: ability to re-use the FMM, and accuracy of the pattern that may be achieved, with attendant increases in at least one of: cost, effort, and complexity.

[0008] One method for doing so, in some non-limiting examples, involves depositing the deposited material and thereafter removing, including without limitation, by a laser drillingprocess, unwanted regions thereof to form the pattern. However, the removal process often involves one of the: creation, and presence, of debris, which may affect a yield of the manufacturing process.

[0009] Further, such methods may have reduced applicability, in at least one of: certain application, and certain devices with certain topographical features.

[0010] In some non-limiting examples, amorphous materials having a glass transition temperature (Tg) that is no more than a remove temperature are polymers. In some non- limiting examples, polymers may exhibit challenges in being deposited to form a thin film under vacuum, including without limitation, using vacuum thermal evaporation, due to their high molecular weight. In some non-limiting examples, molecular weight polymers may be able to be vacuum processed but may, in some non-limiting examples, be one of: crystalline, semi-crystalline, and have a high Tgthat is above room temperature. In some non-limiting examples, oligomers may be capable of being vacuum processed, but may, in some previously reported non-limiting examples, may one of: not be fully amorphous (which, in some non-limiting examples, may be evidenced by the material exhibiting at least one of: crystallization during cooling, cold crystallization during heating, and melting during heating); fail to exhibit a Tgbelow room temperature; and be liquids at room temperature. In some previously reported non-limiting examples, oligomers may contain fluoroalkyl groups, including without limitation, perfluoroalkyl groups, which may result in a substantially low surface energy, and therefore have at least one of a: weaker adhesion to adjacent layers, weaker cohesion than other layers in a thin film device, and low sublimation temperature. Compounds containing perfluoroalkyl groups may be have substantially low applicability in some scenarios since such compounds may have, including without limitation, be evaluated for, further restrictions against at least one of use, and manufacture, under various jurisdictions.

[0011] In some non-limiting examples, selective deposition may be a technique for patterning thin films that may dispense with lithographic processes. In some non-limiting examples, including without limitation, in electronic devices, selective deposition of metallic thin films would have substantially high applicability for use in mass production. In some non-limiting examples, selective deposition methods that: are compatible with in-line vacuum processing, use low process temperatures, and do not cause any cross contamination of materials during in-line vacuum processing, may have substantially high applicability in electronic device manufacturing. In some non-limiting examples, selectivedeposition methods that may dispense with the use of materials with substantially low surface energy may have applicability in some scenarios for substantially high manufacturability and device reliability.

[0012] In some non-limiting examples, selective deposition of metallic thin films may employ a nucleation inhibiting coating (NIC) to reduce a nucleation rate of a deposited material, including without limitation, metals and alloys. In some non-limiting examples, materials that function as an NIC for such deposited material, including without limitation, at least one of: Mg, Ag and MgAg, may comprise a fluoroalkyl group, including without limitation, a perfluoroalkyl group containing a plurality of perfluorinated carbon (C) atoms bonded to each other, which may impart a substantially low surface energy, including without limitation, no more than about 20 dynes / cm, for a thin film formed by such material. Although, in some non-limiting examples, a substantially low surface energy may have applicability in some scenarios for an NIC to function, it may, in some non-limiting examples, introduce at least one of a: reliability, and manufacturing, issue, for an electronic device comprising a plurality of stacked thin films, including without limitation, an OLED device. In some non-limiting examples, a material that comprises a fluoroalkyl group may have: (i) a substantially low adhesive strength, which may cause adhesive failure with adjacent layers; (ii) a substantially low cohesive strength, which may cause cohesive failure; (iii) a substantially low solubility in a non-fluorinated solvent, including without limitation, a solubility in N-methyl-2-pyrrolidone (NMP) of no more than about 10 mg / ml at 25°C, that may make substantially reduce an ability to process the material; and iv) a substantially low sublimation / evaporation temperature, in vacuum, of, without limitation, no more than about 120°C, that may one of: substantially reduce an ability to control rate during vacuum thermal deposition, and facilitate cross-contamination of materials.

[0013] In some non-limiting examples, a material with a substantially low surface energy may have a substantially low intermolecular force. In some non-limiting examples, a material with a substantially low intermolecular force may have a substantially low melting point. In some non-limiting examples, a material with a substantially low melting point may have reduced applicability in scenarios calling for a substantially high temperature reliability of, without limitation, up to one of about: 60°C, 85°C, and 100°C, due to changes in physical properties at operating temperatures that may approach the melting point. In some non-limiting examples, a material with a melting point of about 85°C may have reduced applicability in scenarios calling for a substantially high temperature reliability of up to about 100°C. In some non-limiting examples, a material with a substantially highmelting point, including without limitation, at least about 100°C, may have applicability in scenarios that call for substantially high temperature reliability. In some non-limiting examples, a material with a moderate surface tension, including without limitation, about 20-25 dynes / cm, may have applicability in scenarios that call for a substantially high melting point. In some non-limiting examples, a material with a moderate surface energy and a substantially high melting point have applicability as an NIC in scenarios calling for substantially high temperature reliability.

[0014] In some non-limiting examples, a material with a substantially low surface energy may have a substantially low intermolecular force. In some non-limiting examples, a material with a substantially low intermolecular force may have a substantially low cohesion energy. In some non-limiting examples, a material with a substantially low cohesion energy may have reduced applicability in scenarios that may call for a substantial high fracture toughness, including without limitation, a device that undergoes at least one of a: sheer, and bending, stress during at least one of: manufacturing, and use, as the material may easily crack / fracture. In some non-limiting examples, a material with a substantially high cohesion energy may have reduced applicability in a device manufactured on a flexible substrate, since it may easily crack / fracture upon application of at least one of: bending, and sheer, stress, during at least one of: manufacturing, and use, of the device. In some non- limiting examples, a material with a substantially high cohesion energy may have increased applicability in scenarios that call for a substantially high reliability under at least one of: bending, and sheer, stress. In some non-limiting examples, a material with a moderate surface energy may have increased applicability in scenarios that call for a substantially high reliability under at least one of: bending, and sheer, stress, including without limitation a device manufactured on a flexible substrate. In some non-limiting examples, a material with a moderate surface energy and at least one of a substantially high: cohesion energy, and fracture toughness, may have applicability as an NIC in scenarios that call for a substantially high reliability under at least one of: bending, and sheer, stress.

[0015] According to Young’s equation (Equation 15), a cohesion energy of a material is proportional to its surface energy [Thomas Young (1805) "An essay on the cohesion of fluids," Philosophical Transactions of the Royal Society of London, 95 : 65-87], According to Lindemann’s criterion, a melting temperature of a material is proportional to its cohesive energy [K. K. Nanda, S. N. Sahu and S. N. Behera (2002). "Liquid-drop model for the size- dependent melting of low-dimensional systems". Phys. Rev. A. 66 (1): 013208], In some non-limiting examples, a material with a moderate surface energy, at least one of asubstantially high: cohesion energy, and fracture toughness, and a substantially high melting point, may have applicability as an NIC in scenarios that may call for substantially high reliability under various conditions.

[0016] In some non-limiting examples, a material with a substantially low surface energy may have a substantially low intermolecular force. In some non-limiting examples, a material with a substantially low intermolecular force may have a substantially low sublimation temperature. In some non-limiting examples, a material with a substantially low sublimation temperature may have reduced applicability in scenarios including without limitation, a manufacturing process that calls for substantially precise control of layer thickness in a deposited film of the material. In some non-limiting examples, a material with a sublimation temperature of no more than about 100°C may have decreased applicability in controlling the deposition rate and layer thickness of a film deposited using, without limitation, vacuum thermal evaporation. In some non-limiting examples, a material with a substantially low sublimation temperature may have decreased applicability, as it may facilitate cross contamination during vacuum processing. In some non-limiting examples, a material with a substantially high sublimation temperature may have increased applicability in scenarios that may call for substantially precise control of film thickness. In some non- limiting examples, a material with a moderate surface energy may have increased applicability in scenarios that may call for a substantially high sublimation temperature. In some non-limiting examples, a material with a moderate surface energy and a substantially high sublimation temperature may have increased applicability as an NIC in scenarios that may call for at least one of: precise control of film thickness, and minimal cross- contamination of materials.

[0017] Methods of selective deposition of certain metals and metal alloys are known in the art. In some non-limiting examples, such methods may comprise using: (1) molecular amplification by surface energy modulation, (2) a masking oil, (3) a fluoroalkyl-containing self assembled monolayer (SAM), (4) a fluoroalkyl-containing photochromic diarylethene (DAE) molecule, and a fluoroalkyl-containing photochromic DAE-doped polymer, (5) a polydimethylsiloxane (PDMS) polymer, (6) at least one of: a fluoropolymer, and an oligomer, (7) a fluoroalkyl-containing polycyclic aromatic molecule, (8) a fluoroalkyl- containing polyhedral oligomeric silsesqui oxane (POSS), and (9) a polycyclic aromatic molecule.

[0018] In CN Patent Publication No. 1284508A entitled “Synthesis process of aryloxy cyclotrinitrile phosphide”, filed 07 September 2000 by LIU, W., et al., and published 21February 2001, there is disclosed a method for synthesizing an aryloxy cyclotriphosphazene compound. The compound is prepared by using hexachlorotrichlorophosphazene and substituted phenol in a reaction medium and refluxing for 1 to 15 hours in the presence of a solid base.

[0019] In PCT International Publication No. 2014025317A1 entitled “Lubricants for magnetic recording media”, filed 07 August 2013 by XU, J., et al., and published 13 February 2014, there is disclosed lubricants for magnetic recording media, and in particular, lubricants containing cyclotriphosphazene. Methods for preparing the lubricants are also disclosed.

[0020] In US Patent Publication No. 5652285A entitled “Flame retardant thermosettable resin compositions”, filed 08 February 1996 by COGGIO, W.D., et al., and published 29 July 1997, there is disclosed a thermosettable resin composition comprising (a) one or more thermosettable resins, (b) one or more of curatives, hardeners, and optionally catalysts for the curing of the thermosettable resin in an amount sufficient for the cure of the thermosettable resin, and (c) an effective amount of at least one non-functional cyclophosphazene to render said resin composition, when cured, flame retardant. The non- functional cyclophosphazene contains aryloxy group substitution and does not covalently bond with the resin network. As a result, the non-functional cyclophosphazene does not negatively impact key performance properties such as modulus, thermal stability, dielectric behavior, fracture toughness, moisture uptake or adhesion.

[0021] In CN Patent Publication No. 116262766A entitled “Organic compound containing polyfluoro long chain and application thereof’, filed 13 December 2022 by TANG, D., et al., and published 16 June 2023, there is disclosed an organic compound containing a polyfluoro long chain and application thereof. The compound disclosed introduces a polyfluoro long chain, breaks a conjugated system of a molecular structure, enables the absorption spectrum of the material to be blue-shifted, is not absorbed in visible light, and improves the transmittance of the material in a visible light region; the proper fluorine chain length can keep the material at the vapor deposition temperature suitable for vapor deposition, is suitable for long-time vapor deposition without decomposition, can enlarge an industrial processing window, and improves the thermal stability of the material; the exposed fluorine long chain enables the molecule to have a space configuration similar to a sphere by wrapping the mother nucleus by the fluorine chain, so that the molecule is favorable for forming lower surface tension, can be used as a cathode patterning material,can inhibit the adhesion deposition of a metal electrode, can obtain higher transmittance of an OLED device, can be applied to the technical direction of an OLED under-screen camera, and is favorable for improving the transmittance of the OLED under-screen camera.

[0022] In US Patent Application Publication No. 11856841 entitled “Compound for organic electronic element, organic electronic element using the same, and an electronic device thereof’, filed 15 February 2023 by KIM, K.W., et al., and published 15 June 2023, there is disclosed a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

[0023] In PCT International Publication No. WO 2023 / 013697 entitled “Material for metal patterning, fluoro compound, thin film for metal patterning, organic electroluminescence device, electronic device, and method for forming metal pattern”, filed 3 August 2022 by KAWASHIMA, H., et al., and published 9 February 2023, there is disclosed a material for metal patterning that can suppress, to a high degree, the formation of a metal thin film on a film surface, a fluoro compound, a thin film for metal patterning that uses the material and the fluoro compound, an organic electroluminescence device, a method for forming a metal pattern, and an electronic device. Used is a material for metal patterning that includes a compound having a molecular weight of 500-5000, wherein the compound has a ratio of the number of fluorine atoms to the number of carbon atoms in the molecule of 20% or more and has a monocyclic, connection or condensed-ring aromatic hydrocarbon group and / or heteroaromatic group and / or cyclic alkyl group, and at least one or more fluoroalkyl structures or only one fluoroalkylene structure, and the ratio of the number of carbon atoms directly bonded to fluorine atoms among the carbon atoms forming the fluoroalkyl structure and the fluoroalkylene structure is 30% or more.

[0024] In KAJDAS, C., “Nanoscale Boundary Lubrication of Diamond-like Carbon Coatings with Fluorinated Compounds”, J. Synthetic Lubricants, 2001, 18(1), 18, it is disclosed that progress in the technology of magnetic media has brought about a remarkable increase in recording density. The most important factor determining the utility of magnetic disks is durability against head wear, and this durability is controlled by several factors. The tribology of these media, particularly from the viewpoint of boundary lubrication, wad discussed. In that context there are two characteristic features of this lubrication regime:specific standard lubricants (fluoropolyethers such as Z-DOL and perfluoropolyetliers such as Z-15) and the newer application of these lubricants in the form of films only a few nanometers thick. Advanced phosphazene-type fluorinated compounds are of most interest at present, so these compounds are discussed in more detail. The emphasis is on X-1P lubricant used either alone or as an additive for fluoro- and perfluoropolyethers deposited on protective diamond-like carbon coatings.

[0025] In GLERIA, M., et al., “Fluorine containing phosphazene polymers”, Journal of Fluorine Chemistry, 2004, 125(2), 329, the synthesis, characterization, and practical exploitation of different types of polyphosphazenes substituted with fluorinated groups were disclosed. There are several ways in which fluorine atoms can be inserted into polyphosphazenes, all of which leading to different polymers showing a wide range of characteristics. In general it is true that the insertion of fluorine atoms into phosphazene macromolecules leads to an enhancement of the thermal stability, flame resistance, low- temperature elastomericity, and chemical inertness of the phosphazenes obtained.

[0026] In CHO, S.Y., et al., “Novel highly fluorinated perfluorocyclobutane-based phosphazene polymers for photonic applications”, Chemistry of Materials, 2007, novel cyclophosphazenes containing aryl trifluorovinyl ether functional units together with the corresponding perfluorocyclobutane (PFCB) phosphazene polymers have been synthesized and characterized. These polymers have desirable properties for low optical loss waveguide applications. The monomers used in this study were prepared from sodium 4- (trifluorovinyloxy)phenoxides and cyclophosphazenes with fluorinated alkoxy or aryloxy side groups. The resulting polymers, produced by 2π + 2π cyclopolymerization of the aromatic trifluorovinyl ether moieties, showed good chemical stabilities and high thermal stabilities (Td up to 330 °C). Tough and transparent thin films of these polymers were readily prepared by solvent-free processes using spin-coating of the monomers. By adjusting the ratio of monomers, the refractive index of the polymers could be controlled from 1.4528 to 1.5187 at 1550 nm, with exceptionally low birefringence of An = 0 to 0.0003 ± 0.0002. A propagation optical loss lower than ~0.25 dB / cm at 1550 nm was determined from the polymer films, for the TE polarization by measuring the scattered light intensity along the slab waveguide length. Such good thermal and optical properties demonstrate that these novel PFCB-based phosphazene polymers are promising candidates for optical waveguide or optical device materials.

[0027] In US Patent Application Publication No. 3140143 entitled “Information recording”, filed 18 November 1960 by KASPAUL, Alfred F., et al., and published 7 July 1964, there isdisclosed a process for recording information, which consists essentially in the steps of producing an invisible latent image upon a substantially inert, substantially anhydrous solid substrate having an inorganic metal compound as a functional part of the surface thereof by depositing at least trace amounts of an aqueous fluid in areas where a latent image is to be formed, removing any visible moisture, and thereafter, while maintaining the said substrate in vacuo, exposing the said substrate to vapor deposition of a metal of the group consisting of magnesium, zinc, cadmium and mercury for a period of time sufficient to produce a distinguishable image corresponding to said latent image.

[0028] In KASPAUAL, A.F., et al., “Application of molecular amplification to microcircuitry”, Trans. 10th National Vacuum Symposium, 1963, 422, it is disclosed that molecular amplification or selective deposition occurs from manipulation of effective surface energies. Theory, process, and instrumentation are described whereby passive and active electronic circuit elements and thin film devices are produced using modulated electron and ion beams and aperture modulated molecular beams to form nucleation sites on pre-conditioned substrates. This is followed by maskless development to three-dimensional planar structure using molecular beams and vapor phase deposition. The electron and ion beams are controlled by electro-optical scanning; or refractive processes analogous to optical methods, resulting in transformation of diagrams, drawings, images, or stored information directly into circuit elements and devices.

[0029] In US Patent Application Publication No. 4832983 entitled “Process for producing metallized plastic film”, filed 5 March 1987 by NAGATOMI, Kyosuke, et al., and published 23 May 1989, there is disclosed a process for producing a metallized plastic film, comprising the steps of applying a masking oil supplied from an oil supply source to the surface of a rubber roll drivingly in rotation and having formed on its surface projections or indentations in conformity with the margin pattern to be formed, applying the masking oil on the surface of the rubber roll to the surface of a plastic film in a pattern substantially similar to the margin pattern, and forming a vacuum-evaporated metal film on the oil bearing surface of the plastic film. Margins can be formed in a desired pattern efficiently by this process.

[0030] In US Patent Application Publication No. 4022928 entitled “Vacuum deposition methods and masking structure”, filed 10 May 1976 by PIWCYZK, B.P., and published 10 May 1977, there is disclosed a coating of a perfluoropoly ether compound that is applied to surfaces for inhibiting the deposition of a source material by evaporating or sputtering within a vacuum, and for the deposition of such material onto irregular surfaces, voids, orholes of an object. The coating can be applied by evaporating and then condensing the compound within a vacuum, or it can be applied as a fluid or thixotropic paste through direct contact by means such as a printing process. The coating can further be applied by spraying, or by spinning the surfaces about an axis with the fluid forming a thin coating through the action of centrifugal force. Selected portions of the coating can be removed so that the material is deposited in predetermined patterns. One method of removal is by dissolving the compound in a solvent. The coating can also be removed by selective evaporation in which a laser beam or an electron beam is directed across the surface. The beam evaporates the coating along a predetermined path whereby source material is subsequently condensed onto the substrate along this path. The vapor stream of material is reflected from surfaces coated with the compound so as to deposit onto surface portions of the object which are not in a line of sight with the source.

[0031] In COSNAHAN, T., et al., “Modelling of a vacuum metallization patterning method for organic electronics”, Surface and Coatings Technology, 2018, 336, 128, it is disclosed that the high throughput roll-to-roll patterning of metal thin films could be used to create organic functional devices. The compatibility of an in-vacuum selective metallization technique has been studied, which uses a sacrificial oil to define the metal electrode pattern for functional devices. The exact mechanism of the sacrificial oil masking, pattern definition and oil vaporization, due to the radiant heating from the thermal evaporation source, is described from previous research and experimental findings. The thermal modelling of this process develops further the requirements for the masking oil. It is found that in this particular system the oil thickness must be 1.63 ± 0.31 pm to match the radiative energy, and not be evaporated prior to leaving the metallization zone or to remain, as excess, after metallization is complete. The temperatures required are low and compatible with heat sensitive functional organic materials. The definition of the metal pattern edges is found to be like the liquid oil but thermal modelling still supports the theory of the oil vapor having the largest masking effect and concludes that the pattern definition quality does not depend on the sacrificial oil masking or vaporization effects but on the flexography patterning.

[0032] In US Patent Application Publication No. 2021 / 0371967 entitled “Selective deposition of metallic layers”, filed 21 October 2019 by VARAGNOLO, Silvia, et al., and published 2 December 2021, there is disclosed a method for selectively depositing a metallic layer including one or more of copper, silver and gold. The method includes depositing a fluorinated layer over a surface. The fluorinated layer has a thickness sufficientto substantially prevent deposition of the copper, silver and / or gold between the fluorinated layer and the surface during a subsequent evaporation step using a given deposition rate. The method also includes forming the metallic layer by evaporating, at the given deposition rate, the copper, silver and / or gold over the surface and the fluorinated layer. The copper, silver and / or gold preferentially adhere to the portions of the surface not covered by the fluorinated layer(s).

[0033] In VARAGNOLO, S., et al., “Selective deposition of silver and copper films by condensation coefficient modulation”, Materials Horizons, 2020, 7(1), 143, it is disclosed that an extremely thin (~10 nm) printed layer of specific organofluorine compounds enables selective deposition of copper and silver vapour, with metal condensing only where the organofluorine layer is not. This unconventional approach is fast, inexpensive, avoids metal waste and the use of harmful chemical etchants, and leaves the metal surface uncontaminated.

[0034] In AHN, J. K., et al., “Vapor-phase deposition-based self-assembled monolayer for an electrochemical sensing platform”, AIP Advances, 2020, 10(4), 045213, it is disclosed that vapor-phase deposition was investigated to prepare electrochemically stable self- assembled monolayers (SAMs) since the promising coating technology can improve the surface functionality for electrochemical biosensors. Mercaptopropionic acid (MP A)- Au SAMs in vapor-phase deposition were compared with those in the liquid-phase process, and their electrochemical properties were interrogated by measuring cyclic voltammetry and impedance spectroscopy. As a result, Au-MPA SAMs prepared in a vapor-phase process exhibited much higher electrochemical stability than those in a liquid-phase process. Furthermore, parameters in the vapor-phase deposition process were optimized for reproducible impedance signals, and the as-prepared Au-MPA SAMs under the conditions were adopted for detecting target IgE.

[0035] In TSUJIOKA, T., et al., “Selective metal deposition on photoswitchable molecular surfaces”, Journal of the American Chemical Society, 2008, 130(32), 10740, it is disclosed a novel phenomenon of selective metal deposition on photoswitchable diarylethene (DAE) surfaces. Magnesium vapor was deposited by vacuum evaporation on the colored DAE but not on the uncolored surface. The selective deposition originates in the change of the glass transition temperature of the amorphous DAE film resulting from photoisomerization and therefore from changes of surface molecular motion. Mg atoms on the uncolored surface actively migrated on the surface and were desorbed from the surface. The possibility ofdepositing other metals is also discussed. Light-controllable metal-integrated deposition was demonstrated as a new function of the photoswitchable molecular surfaces.

[0036] In PCT International Publication No. WO 2006 / 093193 entitled “Metal pattern, organic electronic device and process for producing the same”, filed 1 March 2006 by TSUJIOKA, T., et al., and published 8 September 2006, there is disclosed the formation of an electrode pattern of organic device with free morphology and with high precision, without being placed under various restraints accompanying the steps of metal mask preparation, formation of overhanging line bulkhead, detachment with adhesive film, etc. There is provided a process for producing an organic electronic device, wherein voltage is applied to a layer of organic electronic material to thereby cause it to function, the process comprising: forming a foundation layer containing an optionally substituted 1,2- diarylethene, realizing an isomerization reaction in given pattern of the 1,2-diarylethene of the foundation layer, and thereafter applying an electrode material on the foundation layer to thereby form an electrode pattern corresponding to the given pattern. The adherence of magnesium, etc. as the electrode material is changed by the isomerization reaction of the 1,2-diarylethene, and further by the induction of the isomerization reaction, a striking difference between magnesium adherence and nonadherence is brought about when the ratio between open-ring molecules and closed-ring molecules at relevant portion exceeds a certain value. Thus, patterning can be accomplished.

[0037] In TSUJIOKA, T., et al.. “Selective noble-metal deposition modulation on photocurable poly dimethyl siloxane films for electronics device applications”, Applied Physics Express, 2013, 5(2), 021601, it is disclosed metal-vapor deposition modulation on soft polymer surfaces and its applications. A soft viscous surface of poly(dimethylsiloxane) (PDMS) with a glass transition temperature (Tg) of -123 °C showed perfect desorption at room temperature for many kinds of metal vapor. Metal-vapor deposition modulation on PDMS surfaces was applied to the Ca-cathode patterning of an organic light-emitting device, the preparation of thin-film Pb fuse, and the Mg vapor transportation by a pipeline, indicating great potential in various fields of basic research, engineering, and industry.

[0038] In TSUJIOKA, T., et al., “Metal-vapor deposition modulation on soft polymer surfaces”, Applied Physics A, 2021, 127, 1, it is disclosed deposition modulation of noble- metal vapor on a photocurable polydimethylsiloxane (PDMS) film. When Au, Ag or Cu was vacuum-deposited on the UV-curable PDMS, Au and Cu formed a film on the surface even on the uncured film. Ag, however, was desorbed from the uncured film, and a small amount of evaporated Ag atoms was absorbed into the film. This metal species dependenceon metal-deposition / desorption tendency was correlated with the intrinsic vapor pressure of metal species; metals with a high vapor pressure tend to desorb. The uncured film with a small amount of Ag deposition was easily removed with a hexane rinse, leaving only Ag on the cured film. Using this principle, various Ag-film patterns were prepared by irradiating upon UV light with a photomask to form a cured pattern and using maskless Ag deposition. Furthermore, it is disclosed fabrication of fine Ag patterns with a width of several micron by UV-laser scanning and maskless Ag-vapor deposition. This method would be applied to the electrode / wiring for various electronic devices.

[0039] In WEISS, F. M., et al., “Molecular beam deposition of high-permittivity polydimethylsiloxane for nanometer-thin elastomer films in dielectric actuators”, Materials & Design, 2016, 105, 106, it is disclosed the synthesis of a high-permittivity oligomer, namely a chloropropyl -functional, vinyl-terminated siloxane to be thermally evaporated and subsequent UV curing to form an elastomer. The synthesized oligomer exhibits dielectric permittivity enhanced by 33% and a breakdown increase of 26% with respect to the commercially available oligomer DMS-V05. Films 160 nm thin were fabricated after being evaporated under ultra-high vacuum conditions. Spectroscopic ellipsometery served for film growth monitoring. Using atomic force microscopy, the film surface morphology and mechanics were characterized after growth termination and subsequent curing. The Young's modulus of the elastomer corresponded to (1.8 ± 0.2) MPa and is thus a factor of two lower than that of DMS-V05. Consequently, the properties of the films prepared by the new elastomer can be quantified by the normalized figure of merit, which estimates to 4.6.

[0040] In OHNISHI, Y., et al., “Optical characteristics of poly (tetrafluoroethylene) thin film prepared by a vacuum evaporation”, Japanese Journal of Applied Physics, 2016, 55(2s), 02BB04, it is disclosed that poly (tetrafluoroethylene)(PTFE) thin films were deposited onto a glass slide substrate by a heat-resistance type vacuum evaporation apparatus due to changing the evaporation conditions. Transparency of the PTFE thin films prepared by the vacuum evaporation depended on the deposition conditions, i.e., temperatures of the basket, and distance between the evaporation source and substrate. To elucidate relationship between the molecular structure and transparency of the PTFE thin film prepared by the vacuum evaporation, chemical structures, crystallinity and thermophysical property were investigated. The chemical bonding state of the PTFE thin film prepared by the vacuum evaporation was almost the same as that of the pristine PTFE, however, the crystallinity was different. Although the pristine PTFE was crystal structure, the transparent evaporated thin film was estimated to be microcrystal structure. In addition,endothermic peaks in a differential scanning calorimeter (DSC) spectrum of the PTFE thin film were different from that of the pristine PTFE. These endothermic peaks of the PTFE thin film prepared by the vacuum evaporation shifted lower temperature compared to the pristine PTFE, which suggests that molecular weight of the PTFE thin film prepared by the vacuum evaporation decreased compared with that of the pristine PTFE.

[0041] In KWON, S., el al., “Degradation of OLED performance by exposure to UV irradiation”, RSC Advances, 2019, 9, 42561, it is disclosed that organic light-emitting diode (OLED) displays are highly susceptible to the harsh environmental conditions found outdoors, like exposure to direct sunlight as well as UV radiation and storage temperature, resulting in a loss of luminance and lifespan, pixel shrinkage, and permanent damage and / or malfunction of the panel. Top emission OLEDs (TEOLEDs) using Yb : LiF (1 : 1, 2 nm) / Ag : Mg (10 : 1, 16 nm) and Mg : LiF (1 : 1, 2 nm) / Ag : Mg (10 : 1, 16 nm) cathode units were fabricated and the performances of the devices were investigated by subjecting them to UV radiation. A fabricated red TEOLED (control device), employing a standard Mg : LiF (1 : 1, 2 nm) electron injection layer (EIL) and an Ag : Mg (16 nm) cathode, showed a rapid decrease in luminance and a fast increase in driving voltage at 10 mA cm-2 over time after UV irradiation for 300 h. However, a cathode unit comprising a Yb : LiF (1 : 1, 2 nm) EIL and an Ag : Mg (10 : 1, 16 nm) cathode showed no loss of luminance or increase in driving voltage at 10 mA cm-2 over time after UV irradiation for 300 h. Therefore, the changes occurring in both cathode units due to UV irradiation were investigated using the lift-out FIB-TEM technique and EDS mapping. With UV irradiation for 300 h, Ag atoms migrated toward the center of the cathode, Mg atoms migrated toward the CPL, and no Mg atoms were observed in the EIL area. In contrast, it was observed (i) no substantial migration of Ag atoms and they were located at the center of the cathode, (ii) no migration of Mg atoms toward the CPL layer, and (iii) no movement of Yb atoms after UV irradiation.Furthermore, the UV irradiated red TEOLED with an Mg : LiF (1 : 1, 2 nm) EIL showed (i) deterioration in electron injection into the emissive layer (EML) and an increase in the EIL / metal interface resistance, and (ii) a remarkable shift of the J-V curve to the higher voltage side, while almost no such changes were observed in the TEOLD with a Yb : LiF (1 : 1, 2 nm) EIL. Also, an almost identical RGB pixel emitting area was noticed in the Yb : LiF (1 : 1, 2 nm) based devices after UV irradiation for 300 h. These results suggest that Yb could become a good candidate for the cathode unit, providing better device stability against harsh environmental conditions as well as excellent electron injection properties.

[0042] In KIM, S., et al., “Embedded oxidized Ag-Pd-Cu ultrathin metal alloy film prepared at low temperature with excellent electronic, optical, and mechanical properties”, ACS Applied Materials & Interfaces, 2022, 14, 15756, it is disclosed that most transparent conducting materials are based on SmlmCh (ITO). When applied onto flexible substrates, ITO can be prepared in an oxide-metal-oxide (OMO) configuration, typically ITO / Ag / ITO, where the ductility of the embedded metal layer is intended to reduce the mechanical brittleness and improve the electrical conductivity of the OMO multilayer. Hitherto, the lower limit of the thickness of the Ag layer has been limited by the percolation threshold, which limits the Ag layer to be thicker than ~10 nm to avoid agglomeration and to ensure conductivity and structural stability. Metal layers of thicknesses below 10 nm are, however, desirable for obtaining OMO coatings with better optical properties. It is known that agglomeration of the metal layer can, to some extent, be suppressed when substituting Ag by an Ag-Pd-Cu (APC) alloy. APC-based OMO films exhibit excellent optical and electrical properties, but still continuous APC films well below 10 nm thickness cannot be achieved. In this work we demonstrate that controlled oxidation of APC results in smooth, ultrathin APC:O continuous coatings (of thickness ~5 nm) on ITO-coated PET substrates. Moderate oxidation yields superficial PdOv formation, which suppresses Ag agglomeration, while still maintaining excellent conductivity. On the other hand, extensive oxidation of APC leads to extensive Pd oxide nucleation deteriorating the conductivity of the film. The ITO / APC:O / ITO films exhibit low resistivity, attributed to a high Hall mobility associated with suppressed agglomeration, good stability in high humidity / temperature environments, superior transmittance in the visible and infrared region, and excellent mechanical bending properties, thus providing new opportunities for fabricating superior transparent conducting coatings on polymer substrates.

[0043] In US Patent Application Publication No. 2009 / 0081827 entitled “Process for selective area deposition of inorganic materials”, filed 26 September 2007 by YANG, C., et al., and published 26 March 2009, there is disclosed an atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

[0044] In US Patent No. 7,160,819 entitled “Method to perform selective atomic layer deposition of zinc oxide”, filed 25 April 2005 by CONLEY, J.F., et al., and published 26 October 2006, there is disclosed a method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.

[0045] In US Patent Application Publication No. 2024 / 0341116 entitled “Light-emitting device, and electronic apparatus and electronic equipment, each including the light-emitting device”, filed 19 January 2024 by Choi et al., there is disclosed a light-emitting device, and an electronic apparatus and electronic equipment that each include the light-emitting device. The light-emitting device includes an anode, a cathode facing the anode, and an interlayer between the anode and the cathode, wherein the interlayer includes an emission layer and an electron transport region between the emission layer and the cathode. The electron transport region includes an electron injection layer adjacent to the cathode, the electron injection layer includes an alkali metal, and the cathode includes silver (Ag). It describes the alkali metal may be Lithium (Li), and describes the pixel shrinkage phenomenon observed in devices fabricated using Yb / AgMg cathode, and in those using Li / Ag cathode. The thickness of the electron injection layer may be in a range of about 5 A to about 20 A. The thickness of the cathode may be in a range of about 80 A to about 150 A.

[0046] Although numerous methods of selective deposition are known, in some non- limiting examples, they may have reduced appl i cabi li ty i n scenarios that call for: (1) substantially low temperature inline vacuum processing without cross-contamination of materials; (2) patterning of at least one of a: metal, metal alloy, and metal salt, with a broad range of evaporation / sublimation temperatures; (3) the absence of materials that comprise fluoroalkyl groups; and (4) a minimum residue of at least one of the deposited: metal, metal alloy, and metal salt.

[0047] Although numerous materials that can be used as an NIC for selective deposition are known, in some non-limiting examples, they may have reduced applicability in scenarios that call for: (1) low temperature inline vacuum processing without cross-contamination of materials; (2) patterning of at least one of: a metals, a metal alloy, and a metal salt, with a broad range of evaporation / sublimation temperatures and work functions; (3) the absence ofany materials that exhibit a substantially low surface energy when formed into a thin film form; (4) the absence of any materials that exhibit a low melting temperature, including, without limitation, of no more than about 25° C; and (5) do not leave any substantial residue of the deposited material on the NIC, as the presence of such residue may impact the opto- electronic performance of the device.

[0048] In some non-limiting examples, known methods of selective deposition that use molecular amplification by surface energy modulation may have limited applicability in scenarios that call for the deposited materials to be selectively deposited under normal temperature conditions, including without limitation, at 300K, and selective deposition of metals such as Ag and Cu that have a substantially high evaporation temperature, have been reported only at substantially elevated substrate temperatures, including without limitation, at 800K. In some non-limiting examples, such methods may have limited applicability for scenarios calling for selective deposition of deposited materials using low temperature in- line processing methods.

[0049] In some non-limiting examples, known methods for selective deposition that use mask oil may have limited applicability in some scenarios calling for use of low temperature in-line vacuum deposition processes. In some non-limiting examples, such masking oil may have substantially low compatibility with vacuum processing, as the masking oil may not be readily deposited as a thin film using vacuum thermal processing. In some non-limiting examples, introducing such masking oil into a substantially high vacuum environment may cause one of cross-contamination, and degassing, to occur, resulting in a substantially poor vacuum environment. Because the mask oil may, in some non-limiting examples, in a liquid state, there may be reduced applicability in scenarios calling for use of such masking oil in solid-state devices. In some non-limiting examples, masking oils that comprise fluoroalkyl groups, including without limitation, perfluoropolyether groups, may have a substantially low surface tension of no more than about 25 dynes / cm, which may result in such masking oils substantially easily wetting the surface of many different materials. Due to the liquid state of the oil, as well as the substantially low critical surface tension of the material, there may be reduced applicability in scenarios calling for the formation of fine feature patterns with precise dimensions using the mask oil as the oil may easily flow on the surface of a substrate, making precise control of a desired pattern challenging. In some non-limiting examples, the presence of fluoroalkyl, and perfluoroalkyl, groups may limit the applicability of such material in certain scenarios.

[0050] In some non-limiting examples, known methods for selective deposition using substantially small organic molecules, including without limitation, fluorinated silanes, including without limitation, trichloro(lH,lH,2H,2H-perfluorooctyl)silane (FTS), may have reduced applicability in certain scenarios. While vacuum deposition of such materials may be feasible in some non-limiting examples, such material may cause cross-contamination due to the substantially low: molecular weight, and evaporation / sublimation temperature, of such material.

[0051] In some non-limiting examples, known methods of selective deposition using compounds containing at least one of: fluoroalkyl, and perfluoroalkyl, groups may have limited applicability in certain scenarios. In some non-limiting examples, such materials may exhibit substantially low stability in solid-state devices due to the substantially low critical surface tension of at least one of: fluoroalkyl-, and perfluoroalkyl-, containing materials, which may lead to a substantially high likelihood of cohesive / adhesive failure of a device in certain scenarios. In some non-limiting examples, such materials may tend to exhibit substantially low solubility, including without limitation, in non-halogenated solvents, which may limit their applicability in scenarios calling for cleaning / removal of such materials from equipment and masks, including without limitation, high evaporation temperature FMMs, which may be used in the deposition of such materials.

[0052] In some non-limiting examples, known methods, by using solution-based processes, of selective deposition, including without limitation, spin-coating, to coat a substrate with a material that acts to inhibit deposition of the deposited material thereon, may have limited applicability in some scenarios. In some non-limiting examples, such solution-based processes may have substantially reduced compatibility with vacuum-based processes used for fabricating solid-state devices due to the use of solvents that may degrade other layers of such devices. In some non-limiting examples, use of radiation sources, including without limitations, UV light, for the purpose of causing chemical / physical changes to the material prior to subjecting the material to the vapor flux of the deposited material, including without limitation, cross-linking, may impart effects to other layers or materials of the device that have reduced applicability in some scenarios. In some non-limiting examples, a layer containing PDMS has been described as being used for selective deposition of certain deposited materials. In some non-limiting examples, such a method of depositing such PDMS layer may be limited to solution-based processes that may have substantially reduced compatibility with in-line vacuum deposition processes. In some non-limiting examples, it has now been found that a coating formed by PDMS may have substantially reducedapplicability in scenarios calling for the selective patterning of a deposited material comprising Yb and MgAg.

[0053] In some non-limiting examples, known methods for selective deposition, using polymers, including without limitation, fluoropolymers, including without limitation, PDMS, and PTFE, may have substantially reduced applicability in some scenarios. In some non-limiting examples, polymers may have substantially low solubility in non-halogenated solvents, including without limitation, N-Methyl-2-pyrrolidone (NMP). In some non- limiting examples, deposition of polymers may call for solution processing from fluorinated solvents, which may exhibit substantially poor compatibility with inline vacuum processing. While, in some non-limiting examples, some polymers may be deposited by vacuum deposition, such polymers may outgas during vacuum deposition, resulting in cross- contamination of the deposition equipment, which may have reduced applicability in some scenarios. In some non-limiting examples, the use of fluoropolymers may have reduced applicability in some scenarios since they may exhibit substantially low reliability when used in a thin film device due to weak at least one of: adhesion to other layers, and cohesion of the fluoropolymer layer, including without limitation, for polymers having substantially low molecular weight.BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numerals in different figures indicate at least one of: identical, and in some non-limiting examples, at least one of: analogous, and corresponding elements, and in which:

[0055] FIG. 1 is a simplified block diagram from a longitudinal aspect, of an example device having a plurality of layers in a lateral aspect, formed by selective deposition of a patterning coating in a first portion of the lateral aspect, followed by deposition of a closed coating of deposited material in a second portion thereof, according to an example in the present disclosure;

[0056] FIG. 2 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG. 1, in which the closed coating of deposited material in the second portion forms a second electrode of an opto-electronic device, according to an example in the present disclosure;

[0057] FIG. 3 is a schematic diagram showing an example process for depositing a patterning coating in a pattern on an exposed layer surface of an underlying layer in an example version of the device of FIG. 1, according to an example in the present disclosure;

[0058] FIG. 4 is a schematic diagram showing an example process for depositing a deposited material in the second portion on an exposed layer surface that comprises the deposited pattern of the patterning coating of FIG. 3, where the patterning coating is an NIC;

[0059] FIG. 5A is a schematic diagram illustrating an example version of the device of FIG. 1 in a cross-sectional view;

[0060] FIG. 5B is a schematic diagram illustrating the device of FIG. 5A in a complementary plan view;

[0061] FIGs. 6A-6B are schematic diagrams that show various potential behaviours of a patterning coating at a deposition interface with a deposited layer in an example version of the device of FIG. 1 according to various examples in the present disclosure;

[0062] FIGs. 7A-7H are simplified block diagrams from a cross-sectional aspect, of example versions of the device of FIG. 1, showing various examples of possible interactions between the particle structure patterning coating and the particle structures according to examples in the present disclosure;

[0063] FIG. 8 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 2 with additional example deposition steps according to an example in the present disclosure;

[0064] FIG. 9 is a schematic diagram that may show example stages of an example process for manufacturing an example version of an OLED device having sub-pixel regions having a second electrode of different thickness according to an example in the present disclosure;

[0065] FIG. 10 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device in which a second electrode is coupled with an auxiliary electrode according to an example in the present disclosure;

[0066] FIG. 11 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device having a partition and a sheltered region, such as a recess, in a non-emissive region thereof according to an example in the present disclosure;

[0067] FIGs. 12A-12B are schematic diagrams that show example cross-sectional views of an example OLED device having a partition and a sheltered region, such as an aperture, in a non-emissive region, according to various examples in the present disclosure;

[0068] FIG. 13 is a schematic diagram illustrating an example cross-sectional view of an example display panel having a plurality of layers, comprising at least one aperture therewithin, through which at least one electromagnetic signal may be exchanged according to an example in the present disclosure;

[0069] FIG. 14 is an example energy profile illustrating energy states of an adatom absorbed onto a surface according to an example in the present disclosure;

[0070] FIG. 15 is a schematic diagram illustrating the formation of a film nucleus according to an example in the present disclosure; and

[0071] FIG. 16 is a block diagram of an example computer device within a computing and communications environment that may be used for implementing devices and methods in accordance with representative examples of the present disclosure.

[0072] In the present disclosure, a reference numeral having at least one of: at least one numeric value (including without limitation, in at least one of: superscript, and subscript), and at least one alphabetic character (including without limitation, in lower-case) appended thereto, may be considered to refer to at least one of a: particular instance, and subset thereof, of the feature (element) described by the reference numeral. Reference to the reference numeral without reference to the at least one of the: appended value(s), and character(s), may, as the context dictates, refer generally to the feature(s) described by at least one of the: reference numeral, and set of all instances described thereby. Similarly, a reference numeral may have the letter “x’ in the place of a numeric digit. Reference to such reference numeral may, as the context dictates, refer generally to feature(s) described by the reference numeral, where the character “x” is replaced by at least one of: a numeric digit, and the set of all instances described thereby.

[0073] In the present disclosure, for purposes of explanation and not limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including without limitation, particular architectures, interfaces and techniques. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to not obscure the description of the present disclosure with unnecessary detail.

[0074] Further, it will be appreciated that block diagrams reproduced herein can represent conceptual views of illustrative components embodying the principles of the technology.

[0075] Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific details that are pertinent to understanding the examples of the present disclosure, to not obscure the disclosure with details that will be readily apparent to those of ordinary skill in the art having the benefit of the description herein.

[0076] Any drawings provided herein may not be drawn to scale and may not be considered to limit the present disclosure in any way.

[0077] Any feature shown in dashed outline may in some examples be considered as optional.SUMMARY

[0078] It is an object of the present disclosure to obviate / mitigate at least one disadvantage of the prior art.

[0079] According to a broad aspect, there is disclosed a compound comprising: a phosphazene moiety, and a fragment represented by Chemical Formula (F-1):wherein:* represents attachment to the phosphazene moiety;Cy represents a cyclic moiety;RLrepresents a linker moiety;Z1, Z2, and Z4each represent a ring atom of the cyclic moiety, and is a carbon (C) atom;RAcomprises at least one of: fluorine (F), a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, and an unsubstituted fluoroalkoxy group; andRBcomprises at least one of: hydrogen (H), deuterium (D), a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted a fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0080] In some non-limiting examples, the fragment represented by Chemical Formula (F-1) may comprise at least one ring substituent Rc.

[0081] In some non-limiting examples, the fragment may be represented by Chemical Formula (F-2):wherein:Rcrepresents at least one ring substituent, each independently comprise one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstitutedcycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0082] In some non-limiting examples,, the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), may comprise at least one F atom.

[0083] In some non-limiting examples, the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), may comprise one of no more than about: 45, 32, 27, 15, 7, 4, and 3, F atoms.

[0084] In some non-limiting examples, the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), may comprise one of no more than about: 15, 12, 11, 10, and 6, sp2C atoms.

[0085] In some non-limiting examples, the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), may comprise at least one of an: F atom bonded directly to an sp2C atom; F atom bonded directly to an sp3C atom, the sp3C atom being bonded directly to an sp2C atom; F atom bonded directly to an sp3C atom, the sp3C atom being bonded directly to an oxygen (O) atom, and F atom bonded directly to an sp3C atom, the sp3C atom being bonded directly to a sulfur (S) atom.

[0086] In some non-limiting examples, at least one of: RA, and Rc, may comprise at least one F atom.

[0087] In some non-limiting examples, the fragment may be represented by Chemical Formula (F-3):wherein:Z3represents represent a ring atom of the cyclic moiety, and is a C atom;

[0088] In some non-limiting examples, each RAmay independently represent one of: H, D, F, and CH3, and at least one RArepresents one of: F, and CH3.

[0089] In some non-limiting examples, the compound may be represented by Chemical Formula (A-1):(A-1)wherein: each L independently represent a ligand moiety; at least one Z is represented by one of Chemical Formulae: (F-1), and (F-2); and n is an integer of between 3 to 5.

[0090] In some non-limiting examples, the compound may be represented by one of Chemical Formulae: (A-2), and (A-3):(A-2)(A-3) wherein: each L independently represents a ligand moiety; and at least one Z is represented by one of Chemical Formulae: (F-1), and (F-2).

[0091] In some non-limiting examples, at least one L may comprise at least one of: H, F, chlorine (Cl), a hydroxyl moiety, a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted cycloalkyl moiety, an unsubstituted cycloalkyl moiety, a substituted alkoxy moiety, an unsubstituted alkoxy moiety, an unsubstituted aryloxy moiety, a substituted aryloxy moiety, an unsubstituted aryl moiety, a substituted aryl moiety, an unsubstituted fluoroaryl moiety, a substituted fluoroaryl moiety, an unsubstituted heteroaryloxy moiety, a substituted heteroaryloxy moiety, an unsubstituted cycloheteroalkyl moiety, a substituted cycloheteroalkyl moiety, an unsubstituted alkylsilyl moiety, a substituted alkylsilyl moiety, an unsubstituted alkylsiloxy moiety, a substituted alkylsiloxy moiety, an unsubstituted amino moiety, a substituted amino moiety, an amine moiety, an unsubstituted alkylamine moiety, a substituted alkylamine moiety, an unsubstituted arylamine moiety, a substituted arylamine moiety, a cyano moiety, an unsubstituted phosphazo moiety, a substituted phosphazo moiety, an unsubstituted siloxane moiety, a substituted siloxane moiety, a silane moiety, and an organosilicon moiety.

[0092] In some non-limiting examples, at least one L may be one of: an unsubstituted phenoxy moiety, and a substituted phenoxy moiety.

[0093] In some non-limiting examples, a ratio of a total number of F atoms to a total number of sp2atoms present in at least one L may be one of at least about: 0.42, 0.50, 0.58, 0.67, 0.75, 0.83, and 1.17.

[0094] In some non-limiting examples, a ratio of a total number of F atoms to a number of sp2C atoms present in at least L may be one of at least about: 0.42, 0.50, 0.58, 0.67, 0.75, 0.83, and 1.17.

[0095] In some non-limiting examples, a ratio of a total number of F atoms to a number of sp2C atoms present in each L may be one of no more than about: 4.50, 4.32, 3.85, 3.28, 2.50, 2.25, 2.00, 1.17, 0.83, 0.67, 0.33, 0.25, 0.17, and 0.08.

[0096] In some non-limiting examples, RLmay comprise at least one of: a single bond, CHz, CF2, CHF, O, OCH2, S, a secondary amine, a tertiary amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, and a phosphazo moiety.

[0097] In some non-limiting examples, the fragment may be represented by one ofChemical Formulae: (F-4) and (F-5):wherein:Z3, Z5, and Z6is each independently one of: C, boron (B), nitrogen (N), S, O, phosphorus (P), and silicon (Si).

[0098] In some non-limiting examples, in Chemical Formulae (F-4) and (F-5), each of Z1to Z6may be C.

[0099] In some non-limiting examples, in Chemical Formulae (F-4) and (F-5), each of Z2, Z4, Z6may be N, and each of Z1, Z3, Z5may be C.

[0100] In some non-limiting examples, the fragment may be represented by one of:Chemical Formulae (F-6)-(F-9):(F-6)(F-7)(F-8)wherein:Z3and Z5is each independently one of: C, B, N, S, O, P, and Si.

[0101] In some non-limiting examples, in Chemical Formulae (F-6)-(F-9), each ofZ1to Z5may be C.

[0102] In some non-limiting examples, Cy may comprise a polycyclic moiety.

[0103] In some non-limiting examples, Cy may comprise an aromatic moiety.

[0104] In some non-limiting examples, Cy may be a phenyl moiety.

[0105] In some non-limiting examples, RAmay be one of: F, CH3, and OCF3.

[0106] In some non-limiting examples, RBmay be one of: H, D, OCF3, CH3, andOCH3.

[0107] In some non-limiting examples, the compound may be one of: a small molecule, and an oligomeric rubber.

[0108] In some non-limiting examples, a molar weight of the compound may be one of no more than about: 100,000, 75,000, 10,000, 8,000, 7,000, and 5,000, g / mol.

[0109] In some non-limiting examples, the compound may exhibit a surface energy of one of at least about: 19, 20, 21, 22, and 23, dynes / cm, when formed as one of a: coating, and patterning coating.

[0110] In some non-limiting examples, the compound may exhibit a surface energy of one of no more than about: 29, 28, 26, 25, 24, and 23, dynes / cm, when formed as one of a: coating, and patterning coating.

[0111] In some non-limiting examples, the compound may exhibit a surface energy of one of between about: 19-25, 20-25, 21-24, 19-29, and 22-24, dynes / cm, when formed as one of a: coating, and patterning coating.

[0112] In some non-limiting examples, the compound may have a glass transition temperature of one of no more than about: 65°C, 55°C, 45°C, 35°C, 30°C, and 25°C.

[0113] In some non-limiting examples, the compound may have a glass transition temperature of one of at least about: -50°C, -30°C, -25°C, -20°C, -15°C, -10°C, -5°C, and 0°C.

[0114] In some non-limiting examples, the compound may have a glass transition temperature of one of between about: -30-60°C, -20-50°C, -10-50°C, 0-40°C, and 5-35°C.

[0115] In some non-limiting examples, the compound may have a sublimation temperature of one of at least about: 150°C, 125°C, 110°C, 100°C, 90°C, and 75°C.

[0116] In some non-limiting examples, the compound may have a sublimation temperature of one of no more than about: 300°C, 350°C, 400°C, and 500°C.

[0117] In some non-limiting examples, the compound may have a sublimation temperature of one of between about: 100-320°C, 120-300°C, 140-280°C, and 150-250°C.

[0118] In some non-limiting examples, the compound may have a melting temperature of one of at least about: 50°C, 70°C, 75°C, 80°C, 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C.

[0119] In some non-limiting examples, the compound may have a melting temperature of one of at least about: 100°C, 110°C, 120°C, and 130°C.

[0120] In some non-limiting examples, the compound may have a melting temperature of one of no more than about: 350°C, 280°C, 250°C, 230°C, 220°C, 200°C, 190°C, 180°C, 170°C, 160°C, and 150°C.

[0121] In some non-limiting examples, the compound may have a melting temperature of one of between one of about: 90-220°C, 100-200°C, 100-180°C and 110- 160°C.

[0122] In a broader aspect, there may be disclosed an opto-electronic device comprising a compound comprising a core moiety and at least one ligand moiety bonded to the core moiety, the ligand moiety comprising a cyclic moiety.

[0123] In some non-limiting examples, the ligand moiety may comprise F.

[0124] In some non-limiting examples, the compound may be represented byChemical Formula (A-1):wherein: each L independently represent the ligand moiety; and n is an integer of between 3 to 5.

[0125] In some non-limiting examples, the ligand moiety may be substantially devoid of any perfluoroalkyl moiety comprising a plurality of adjacently bonded perfluorinated C atoms.

[0126] In some non-limiting examples, the compound may be substantially devoid of any perfluoroalkyl moiety comprising a plurality of adjacently bonded perfluorinated C atoms.

[0127] In some non-limiting examples, the at least one L may be represented by one of Chemical Formulae: (F-1), and (F-2):(F-1)(F-2)wherein:* represents attachment to P;Cy represents a cyclic moiety;RLrepresents a linker moiety;Z1, Z2, and Z4each represents a ring atom of the cyclic moiety, and is a C atom;RAcomprises at least one of: F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, and an unsubstituted fluoroalkoxy group;RBcomprises at least one of: H, D, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted a fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfidegroup, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group; andRcrepresents at least one ring substituent, each independently comprise one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0128] In some non-limiting examples, RLmay comprise at least one of: a single bond, CH2, CF2, CHF, O, OCH2, S, a secondary amine, a tertiary amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, and a phosphazo moiety.

[0129] In some non-limiting examples, the device may further comprise: a patterning coating comprising the composition of claim x, the patterning coating being disposed on a first layer surface of an underlying layer in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

[0130] In some non-limiting examples, the device may further comprising an emissive region comprising: a first electrode and a second electrode, andat least one semiconducting layer disposed between the first and second electrodes.

[0131] In some non-limiting examples, the first portion may exclude a lateral aspect of the emissive region.

[0132] In some non-limiting examples, the second electrode may comprise at least a part of the deposited layer as a layer thereof.

[0133] In some non-limiting examples, the first portion may include a lateral aspect of the emissive region.

[0134] In some non-limiting examples, further comprising an auxiliary electrode comprising the deposited layer as a layer thereof.DESCRIPTIONLayered Device

[0135] The present disclosure relates generally to layered semiconductor devices 100 (FIG. 1), and more specifically, to opto-electronic devices 200 (FIG. 2). An opto- electronic device 200 may generally encompass any device 100 that converts electrical signals into light in the form of photons and vice versa. In some non-limiting examples, the opto-electronic device 200 may be an organic light-emitting diode (OLED).

[0136] Those having ordinary skill in the relevant art will appreciate that, while the present disclosure is directed to opto-electronic devices 200, the principles thereof may, in some non-limiting examples, be applicable to any panel having a plurality of layers, including without limitation, at least one layer of conductive deposited material 431 (FIG. 4), including as a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, including without limitation, one of partially, and entirely, at a non-zero angle relative to a plane of at least one of the layers.

[0137] Turning now to FIG. 1, there may be shown a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, as shown in greater detail in FIG. 2, the device 100 may comprise a plurality of layers deposited upon a substrate 10.

[0138] In some non-limiting examples, a lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. In some non-limiting examples, a second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. In some non-limiting examples,at least one of the lateral axes may define a lateral aspect of the device 100. In some non- limiting examples, the longitudinal axis may define a longitudinal aspect of the device 100.

[0139] In some non-limiting examples, the layers of the device 100 may extend, in the lateral aspect, substantially parallel to a plane defined by the lateral axes. Those having ordinary skill in the relevant art will appreciate that the substantially planar representation shown in FIG. 1 may be, in some non-limiting examples, an abstraction for purposes of illustration. In some non-limiting examples, there may be, across a lateral extent of the device 100, localized substantially planar strata of different thicknesses and dimension, including, in some non-limiting examples, the substantially complete absence of at least one layer separated by non-planar transition areas (including lateral gaps and even discontinuities).

[0140] Thus, while for illustrative purposes, in some non-limiting examples, the device 100 may be shown in its longitudinal aspect as a substantially stratified structure of substantially parallel planar layers, such device 100 may illustrate locally, a diverse topography to define features, each of which may substantially exhibit the stratified profile discussed in the longitudinal aspect.

[0141] In some non-limiting examples, a lateral aspect of an exposed layer surface 11 of the device 100 may comprise a first portion 101 (FIG. 1) and a second portion 102 (FIG. 1). In some non-limiting examples, the second portion 102 may comprise that part of the exposed layer surface 11 of the device 100 that lies beyond the first portion 101.

[0142] As shown in FIG. 1, the layers of the device 100 may comprise a substrate 10, and a patterning coating 110 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof. In some non-limiting examples, the patterning coating 110 may be limited in its lateral extent to the first portion 101 and a deposited layer 130 may be disposed as a closed coating 140 on an exposed layer surface 11 of the device 100 in a second portion 102 of its lateral aspect.

[0143] In some non-limiting examples, at least one particle structure 150 may be disposed as a discontinuous layer 160 on the exposed layer surface 11 of the patterning coating 110. In some non-limiting examples, although not shown, at least one of: the patterning coating 110, the deposited layer 130, and at least one particle structure 150, may be deposited on a layer (underlying layer 610 (FIG. 6A)) other than the substrate 10 including without limitation, an intervening layer between the substrate 10 and at least oneof: the patterning coating 110, deposited layer 130, and the at least one particle structure 150. In some non-limiting examples, the underlying layer 610 may comprise at least one of: an orientation layer, and an organic supporting layer.

[0144] In some non-limiting examples, at least one of the: patterning coating 110, deposited layer 130, and at least one particle structure 150, may be covered by at least one overlying layer 170.

[0145] In some non-limiting examples, such overlying layer 170 may comprise at least one of an: encapsulation layer and optical coating. In some non-limiting examples, the encapsulation layer may comprise at least one of: a glass cap, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer, provided to encapsulate the device 100. In some non-limiting examples, the optical coating may comprise: at least one of an: optical, and structural, coating, and at least one component thereof, including without limitation, a polarizer, a color filter, an anti -reflection coating, an anti-glare coating, cover glass, and an optically clear adhesive (OCA).

[0146] In some non-limiting examples, at least one of a: substantially thin patterning coating 110 in the first portion 101, and deposited layer 130 in the second portion 102, may provide a substantially planar surface on which the overlying layer 170 may be deposited. In some non-limiting examples, providing such a substantially planar surface for application of such overlying layer 170 may increase adhesion thereof to such surface.

[0147] In some non-limiting examples, the optical coating may be used to modulate optical properties of light being at least one of: transmitted, emitted, and absorbed, by the device 100, including without limitation, plasmon modes. In some non-limiting examples, the optical coating may be used as at least one of: an optical filter, an index-matching coating, an optical outcoupling coating, a scattering layer, a diffraction grating, and parts thereof.

[0148] In some non-limiting examples, the optical coating may be used to modulate at least one optical microcavity effect in the device 100 by, without limitation, tuning at least one of the: total optical path length, and refractive index thereof. At least one optical property of the device 100 may be affected by modulating at least one optical microcavity effect including without limitation, the output light, including without limitation, at least one of: an angular dependence of an intensity thereof, and a wavelength shift thereof. In some non-limiting examples, the optical coating may be a non-electrical component, that is,the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.

[0149] In some non-limiting examples, the optical coating may be formed of any deposited material 431, and in some non-limiting examples, may employ any mechanism of depositing a deposited layer 130 as described herein.Patterning

[0150] In some non-limiting examples, with reference to FIG. 1, in some non- limiting examples, a patterning coating 110, comprising a patterning material 311 (FIG. 3), including without limitation, may be an NIC material, may be disposed, in some non- limiting examples, as a closed coating 140, on an exposed layer surface 11 of an underlying layer 610, including without limitation, a substrate 10, of the device 100, in some non- limiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 315 (FIG. 3) such as, without limitation, an FMM, including without limitation, to the first portion 101.

[0151] Thus, in some non-limiting examples, in the second portion 102 of the device 100, the exposed layer surface 11 of the underlying layer 610 of the device 100, may be substantially devoid of a closed coating 140 of the patterning coating 110.Patterning Coating

[0152] The patterning coating 110 may comprise a patterning material 311. In some non-limiting examples, the patterning coating 110 may comprise a closed coating 140 of the patterning material 311.

[0153] The patterning coating 110 may provide an exposed layer surface 11 with a substantially low propensity (including without limitation, a substantially low initial sticking probability) (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.) against deposition of a deposited material 431 to be deposited thereon upon exposing such surface to a vapor flux 432 of the deposited material 431, which, in some non-limiting examples, may be substantially no more than the propensity against deposition of the deposited material 431 to be deposited on the exposed layer surface 11 of the underlying layer 610 of the device 100, upon which the patterning coating 110 has been deposited.

[0154] Because of the attributes, including without limitation, a low initial sticking probability, of at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, against deposition of the deposited material 431, the exposed layer surface 11 of the first portion 101 comprising the patterning coating 110 may be substantially devoid of a closed coating 140 of the deposited material 431.

[0155] However, exposure of the device 100 to a vapor flux 432 of the deposited material 431 may, in some non-limiting examples, result in the formation of a closed coating 140 of a deposited layer 130 of the deposited material 431 in the second portion 102, where the exposed layer surface 11 of the underlying layer 610 may be substantially devoid of the patterning coating 110.

[0156] Thus, in some non-limiting examples, the patterning coating 110 may be an NIC that provides high deposition (patterning) contrast against subsequent deposition of the deposited material 431, such that the deposited material 431 tends not to be deposited, in some non-limiting examples, as a closed coating 140, where the patterning coating 110 has been deposited.

[0157] In some non-limiting examples, the patterning coating 110 may comprise a patterning material 311. In some non-limiting examples, the patterning material 311 may comprise an NIC material. In some non-limiting examples, the patterning coating 110 may comprise a closed coating 140 of the patterning material 311.

[0158] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 110 for causing formation of a discontinuous layer 160 of at least one particle structure 150, upon the patterning coating 110 in the first portion 101 being subjected to a vapor flux 432 of a deposited material 431. In at least some applications, the attributes of the patterning coating 110 may be such that a closed coating 140 of the deposited material 431 may be formed in the second portion 102, which may be substantially devoid of the patterning coating 110, while only a discontinuous layer 160 of at least one particle structure 150 having at least one characteristic may be formed in the first portion 101 on the patterning coating 110.

[0159] For purposes of simplicity of discussion, in the present disclosure, to the extent that a patterning coating 110 is deposited to act as a base for the deposition of at leastone particle structure 150 thereon, such patterning coating 110 may be designated as a particle structure patterning coating 110p. By contrast, to the extent that a patterning coating 110 is deposited in a first portion 101 to substantially preclude formation in such first portion 101 of a closed coating 140 of the deposited layer 130, thus restricting the deposition of a closed coating 140 of the deposited layer 130 to a second portion 102, such patterning coating 110 may be designated as a non-particle structure patterning coating 110n. Those having ordinary skill in the relevant art will appreciate that in some non- limiting examples, a patterning coating 110 may act as both a particle structure patterning coating 110pand a non-particle structure patterning coating 110n.

[0160] In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 160 of at least one particle structure 150 of a deposited material 431, which may be, in some non-limiting examples, of one of a: metal, and metal alloy (metal / alloy), including without limitation, at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, in the second portion 102, while depositing a closed coating 140 of the deposited material 431 having a thickness of, without limitation, one of no more than about: 100, 75, 50, 25, and 15, nm. In some non-limiting examples, an amount of the deposited material 431 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of between about: 1- 50%, 2-25%, 5-20%, and 7-10% of the amount of the deposited material 431 deposited as a closed coating 140 in the second portion 102, which, in some non-limiting examples may correspond to a thickness of one of no more than about: 100, 75, 50, 25, and 15, nm.

[0161] In some non-limiting examples, the patterning coating 110 may be disposed in a pattern that may be defined by at least one region therein that may be substantially devoid of a closed coating 140 of the patterning coating 110.

[0162] In some non-limiting examples, the at least one region may separate the patterning coating 110 into a plurality of discrete fragments thereof. In some non-limiting examples, the plurality of discrete fragments of the patterning coating 110 may be physically spaced apart from one another in the lateral aspect thereof. In some non-limiting examples, the plurality of the discrete fragments of the patterning coating 110 may be arranged in a regular structure, including without limitation, an array (matrix), such that in some non-limiting examples, the discrete fragments of the patterning coating 110 may be configured in a repeating pattern.

[0163] In some non-limiting examples, at least one of the discrete fragments of the patterning coating 110 may each correspond to an emissive region 210. In some non- limiting examples, an aperture ratio of the emissive regions 410 may be one of no more than about: 50%, 40%, 30%, and 20%.

[0164] In some non-limiting examples, the patterning coating 110 may be formed as a single monolithic coating.Attributes of Patterning Coating / MaterialComposition

[0165] In some non-limiting examples, the layered semiconductor device 100 may comprise a compound comprising a core moiety and at least one ligand moiety bonded to the core moiety, the ligand moiety comprising a cyclic moiety. In some non-limiting examples, the ligand moiety may comprise fluorine (F). In some non-limiting examples, at least one of the ring atoms of the cyclic moiety may be substituted with a moiety comprising F. In some non-limiting examples, at least one of: the patterning coating 110, and the patterning material 211, may comprise such a compound.

[0166] In some non-limiting examples, the core moiety may be a phosphazene moiety. In some non-limiting examples, the core moiety may be a cyclophosphazene moiety, including but not limited to, one of: a cyclotriphosphazene moiety, and a cyclotetraphosphazene moiety.

[0167] In some non-limiting examples, the compound may comprise: a phosphazene moiety, and a fragment represented by Chemical Formula (F-1):wherein:* represents attachment to the phosphazene moiety;Cy represents a cyclic moiety;RLrepresents a linker moiety;Z1, Z2, and Z4each represents a ring atom of the cyclic moiety, and is a carbon (C) atom;RAcomprises at least one of: F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, and an unsubstituted fluoroalkoxy group;RBcomprises at least one of: H, deuterium (D), a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted a fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkyl silyl group, an unsubstituted alkyl silyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0168] In various non-limiting examples of the present application, curved lines may be used to represent direct or indirect bond(s) between certain ring atoms. By way of non-limiting example, referring to Chemical Formula (F-l), the curved line connecting Z2and Z4may represent a direct bond between Z2and Z7, or the presence of one or more additional ring atoms arranged between Z2and Z4which, together with other ring atoms, form Cy. Similarly, the curved line connecting Z1and Z4may represent a direct bond between Z1and Z7, or the presence of one or more additional ring atoms arranged between Z1and Z4which, together with other ring atoms, form Cy.

[0169] In some non-limiting examples, RAcomprises at least one of: F, a substituted C1-C6alkyl group, an unsubstituted C1-C6alkyl group, a substituted C1-C6alkoxy, an unsubstituted C1-C6alkoxy group, a substituted C1-C6fluoroalkyl group, an unsubstituted C1-C6fluoroalkyl group, a substituted C1-C6fluoroalkoxy group, and an unsubstituted C1- C6fluoroalkoxy group;

[0170] In some non-limiting examples, RBcomprises at least one of: H, deuterium (D), a substituted C1-C6alkyl group, an unsubstituted C1-C6alkyl group, a substituted C1-C6alkoxy group, an unsubstituted C1-C6alkoxy group, a substituted C1-C6fluoroalkyl group,an unsubstituted C1-C6a fluoroalkyl group, a substituted C1-C6fluoroalkoxy group, an unsubstituted C1-C6fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0171] In some non-limiting examples, the fragment represented by Chemical Formula (F-1) may comprise at least one additional ring substituent. In some non-limiting examples, the fragment may be represented by Chemical Formula (F-2):wherein:Rcrepresents at least one ring substituent, each independently comprise one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, asulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group;*, Cy, Z1, Z2, Z4, RA, RB, and RLare as defined above.

[0172] By way of non-limiting example, Rcmay represent a plurality of ring substituents, including but not limited to, 1, 2, 3, or 4 substituents, each substituent being bonded to any of the ring atoms of Cy. In cases where Rcrepresents multiple substituents, each substituent may be selected independently of one another. In some non-limiting examples, Rcmay be substituted onto one or more of the additional ring atoms which may be present between at least one of: between Z2and Z1, and between Z1and Z4.

[0173] In some non-limiting examples, Rcmay represent at least one ring substituent, each independently comprising one of: H, D, F, a substituted C1-C6alkyl group, an unsubstituted C1-C6alkyl group, a substituted C1-C6alkoxy group, an unsubstituted C1- C6alkoxy group, a substituted C1-C6fluoroalkyl group, an unsubstituted C1-C6fluoroalkyl group, a substituted C1-C6fluoroalkoxy group, an unsubstituted C1-C6fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0174] In some non-limiting examples, the fragment represented by at least one of: Chemical Formulae (F-1), and (F-2), may comprise at least one F atom.

[0175] In some non-limiting examples, the fragment represented by at least one of: Chemical Formulae (F-1), and (F-2), may comprise one of no more than about: 45, 32, 27, 15, 7, 4, and 3, F atoms.

[0176] In some non-limiting examples, the fragment represented by at least one of: Chemical Formulae (F-1), and (F-2), may comprise one of no more than about: 15, 12, 11, 10, and 6, sp2C atoms.

[0177] In some non-limiting examples, the fragment represented by at least one of: Chemical Formulae (F-1), and (F-2), may comprise at least one of: an F atom bonded directly to an sp2C atom; an F atom bonded directly to an sp3C atom and the sp3C atom being bonded directly to an sp2C atom; an F atom bonded directly to an sp3C atom and the sp3C atom being bonded directly to an O atom, and an F atom bonded directly to an sp3C atom and the sp3C atom being bonded directly to an S atom.

[0178] In some non-limiting examples, at least one of: RA, and Rc, may comprise at least one F atom.

[0179] In some non-limiting examples, the fragment may be represented by Chemical Formula (F-3):wherein:Z3represents represent a ring atom of the cyclic moiety, and is a C atom; and *, Cy, Z1, Z2, ZZ. RA, RB, Rc, and RLare as defined above.

[0180] In some non-limiting examples, in Chemical Formula (F-3), each R1may independently represent one of: H, D, F, and CH3, and at least one RAmay represent one of: F, and CH3. In some non-limiting examples, each RAmay independently represent one of: F, and CH3. In some non-limiting examples, at least one RAmay represent F.

[0181] In some non-limiting examples, in Chemical Formula (F-3), the two RAgroups may be structurally identical. In some non-limiting examples, the two RAgroups may be structurally different.

[0182] In some non-limiting examples, the compound may be represented by Chemical Formula (A-1):(A-1) wherein: each L independently represent a ligand moiety; at least one Z is represented by one of: Chemical Formulae (F-1), and (F-2); and n is an integer of between 3 to 5.

[0183] In some non-limiting examples, the compound may be represented by one of Chemical Formulae (A-2), and (A-3):(A-2)(A-3) wherein: each Z independently represents a ligand moiety.

[0184] In some non-limiting examples, at least one L may be represented by one of: Chemical Formulae (F-1), and (F-2).

[0185] In some non-limiting examples, all ligand moieties, Z, of the compound may be structurally identical. In some non-limiting examples, the compound may comprise ligand moieties, Z, of different structures.

[0186] In some non-limiting examples, at least one ligand moiety, Z, may comprise at least one of: H, F, Cl, a hydroxyl moiety, a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted cycloalkyl moiety, an unsubstituted cycloalkyl moiety, asubstituted alkoxy moiety, an unsubstituted alkoxy moiety, an unsubstituted aryloxy moiety, a substituted aryloxy moiety, an unsubstituted aryl moiety, a substituted aryl moiety, an unsubstituted fluoroaryl moiety, a substituted fluoroaryl moiety, an unsubstituted heteroaryloxy moiety, a substituted heteroaryloxy moiety, an unsubstituted cycloheteroalkyl moiety, a substituted cycloheteroalkyl moiety, an unsubstituted alkylsilyl moiety, a substituted alkylsilyl moiety, an unsubstituted alkylsiloxy moiety, a substituted alkylsiloxy moiety, an unsubstituted amino moiety, a substituted amino moiety, an amine moiety, an unsubstituted alkylamine moiety, a substituted alkylamine moiety, an unsubstituted arylamine moiety, a substituted arylamine moiety, a cyano moiety, an unsubstituted phosphazo moiety, a substituted phosphazo moiety, an unsubstituted siloxane moiety, a substituted siloxane moiety, a silane moiety, and an organosilicon moiety.

[0187] In some non-limiting examples, at least one ligand moiety, Z, may be one of: an unsubstituted phenoxy moiety, and a substituted phenoxy moiety.

[0188] In some non-limiting examples, at least one ligand moiety, Z, may be one of: an unsubstituted fluorophenoxy moiety, and a substituted fluorophenoxy moiety.

[0189] In some non-limiting examples, a ratio of a total number of F atoms to a total number of sp2atoms present in at least one ligand moiety, Z, of the compound may be one of at least about: 0.42, 0.50, 0.58, 0.67, 0.75, 0.83, and 1.17.

[0190] In some non-limiting examples, a ratio of a total number of F atoms to a total number of sp2atoms present in each ligand moiety, Z, of the compound may be one of no more than about: 4.50, 4.32, 3.85, 3.28, 2.50, 2.25, 2.00, 1.17, 0.83, 0.67, 0.33, 0.25, 0.17, and 0.08.

[0191] An sp2atom, as used herein, may refer to any atom that is hybridized in an sp2configuration, including but not limited to: C, N, O, S, B, P, and Si.

[0192] In some non-limiting examples, a ratio of a total number of F atoms to a number of sp2C atoms present in at least one ligand moiety, Z, of the compound may be one of at least about: 0.42, 0.50, 0.58, 0.67, 0.75, 0.83, and 1.17.

[0193] In some non-limiting examples, a ratio of a total number of F atoms to a total number of sp2C atoms present in each ligand moiety, Z, of the compound may be one of no more than about: 4.50, 4.32, 3.85, 3.28, 2.50, 2.25, 2.00, 1.17, 0.83, 0.67, 0.33, 0.25, 0.17, and 0.08.Linker Moiety, RL

[0194] In some non-limiting examples, the linker moiety RLmay correspond to a part of the fragment that may be proximate to the core moiety, including without limitation,the phosphazene moiety, and may comprise the atom(s) that attach the cyclic moiety to the core moiety, including without limitation, the phosphazene moiety. In some non-limiting examples, RLmay comprise at least one of: a single bond, CH2, CF2, CHF, O, OCH2, S, a secondary amine, a tertiary amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, and a phosphazo moiety. In some non-limiting examples, RLmay be one of: -O-, and -O-CH2-.

[0195] In some non-limiting examples, the linker moiety may be substantially devoid of one of: a -CF3unit, and a -CF2-unit, except for those which are attached, for example, to an aromatic group by one of: an ether, and an amine, moiety. In some non- limiting examples, RLmay be substantially devoid of at least two adjacently bonded perfluorinated carbons.

[0196] In some non-limiting examples, the linker moiety may comprise one of no more than about: 4, 3, 2, and 1, ether unit(s). Without wishing to be bound by any particular theory, it may be postulated that the presence of multiple ether units within a single ligand moiety, which may decrease a melting point of the compound, may have reduced applicability in some scenarios.Cyclic Moiety, Cy

[0197] In some non-limiting examples, Cy may be a carbocyclic moiety where all ring atoms thereof are C. In some non-limiting examples, Cy may be a heterocyclic moiety. In some non-limiting examples, Cy may comprise, as a ring atom thereof, at least one heteroatom, including but not limited to at least one of: C, boron (B), N, S, O, P, and Si. In some non-limiting examples, Z1, Z2, and Z4may independently be one of: N and C. In some non-limiting examples, Z1, Z2, and Z4may be C.

[0198] In some non-limiting examples, the cyclic moiety may be a 6-membered cyclic moiety. In some non-limiting examples, the fragment may be represented by one of: Chemical Formulae (F-4) and (F-5):(F-5) wherein:Z3, Z5, and Z6is each independently one of: C, B, N, S, O, P, and Si; and *, RL, RARB, Rc, Z1, Z2, and Z4are as defined above.

[0199] In some non-limiting examples, in Chemical Formulae (F-4) and (F-5), each of Z1to Z6may be C.

[0200] In some non-limiting examples, in Chemical Formulae (F-4) and (F-5), each of Z2, Z4, Z6may be N, and each of Z1, Z3, Z5may be C.

[0201] In some non-limiting examples where the fragment is 5-membered, the fragment may be represented by one of: Chemical Formulae (F-6) to (F-9):wherein:Z3and Z5is each independently one of: C, B, N, S, O, P, and Si; and *, RL, RA, RB, Rc, Z1, Z2, and Z4are as defined above.

[0202] It would be appreciated by a person having ordinary skill in the relevant art that, in Chemical Formulae (F-1) to (F-4), (F-6), and (F-7), the single bond connecting adjacent ring atoms, including but not limited to: Z1, Z2, Z3, Z4, Z5, and Z6, may also encompass a bond of higher order, including but not limited to double, and triple, bonds.

[0203] In some non-limiting examples, in Chemical Formulae (F-6) to (F-9), each of Z1to Z5may be C.

[0204] In some non-limiting examples, Cy may comprise a monocyclic moiety. In some non-limiting examples, the Cy may comprise a polycyclic moiety, including without limitation, a bicyclic moiety, and a tricyclic moiety. In some non-limiting examples, Cy may be a polycyclic moiety having no more than one of: 9, 10, 13, and 14 ring atoms. In some non-limiting examples where Cy is a polycyclic moiety, Z4may be at a distal position to Z1.

[0205] As used herein, the term “distal position” refers to the relative spatial position of a first ring atom, including but not limited to, Z1, with respect to a second ring atom, including but not limited to, Z1, within a cyclic structure. More specifically, in some non-limiting examples, a second ring atom, including but not limited to, Z1, is at a distal position relative to a first ring atom, including but not limited to, Z1, when the second ring atom is positioned further away along the ring system, such that it is not immediately adjacent to the first atom, but rather is separated by at least one other ring atoms within the ring system. In some non-limiting examples, a second ring atom, including but not limited to, Z1, is at a distal position relative to a first ring atom, including but not limited to, Z1, when the second ring atom is positioned at a greater distance from the first ring atom in thecyclic structure. In some non-limiting examples, in a 6-membered ring system, including but not limited to, benzene, cyclohexane, piperidine, and pyrimidine, the ring atom at ring position 4 is in at distal position to the ring atom at ring position 1. In some non-limiting examples, in a 5-membered ring system, including but not limited to, cyclopentane, cyclopentadiene, and pyrrole, the ring atom at one of: ring positions 3, and 4, is at a distal position to the ring atom at ring position 1.

[0206] In some non-limiting examples where Cy is a polycyclic moiety, one of at least: 2, 3, 4, and 5, ring atoms may be positioned between Z1and Z4of one of: Chemical Formulae (F-1), and (F-2). In some non-limiting examples where Cy is a polycyclic moiety, one of at least: 2, 3, 4, and 5, ring atoms may be positioned between Z2and Z4of one of: Chemical Formulae (F-1), and (F-2). In some non-limiting examples, Cy may be a fused polycyclic moiety. In some non-limiting examples, the fused polycyclic moiety may consist of one of: 2, and 3, ring structures joined together by shared ring atoms.

[0207] In some non-limiting examples, Cy may comprise a plurality of cyclic moieties, including but not limited to, two, and three, cyclic moieties, that are linked to one another via at least one bridging moiety. In some non-limiting examples where at least two cyclic moieties are present, at least one bridging moiety may be present to bond the at least two cyclic moieties together. In some non-limiting examples where N cyclic moieties are present in the ligand moiety, the number of bridging moieties may be between 1 to (N -1).

[0208] In some non-limiting examples, the bridging moiety may comprise at least one of: a single bond, C, CH, CH2, CH3, CR2, C(R2) CHF, CF2, CF3, CF2N, NH, NR2, S, O, CO, SO2, an ether, a thioether, a disulfide, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, and an unsubstituted heterocycloalkylene. In some non-limiting examples, each R2independently may represent at least one of: H, D, F, an alkyl group, a fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.

[0209] In some non-limiting examples, the bridging moiety may be substantially devoid of one of: a -CF3unit, and a -CF2-unit, except for those which are attached, forexample, to an aromatic group by one of: an ether, and an amine, moiety. In some non- limiting examples, RBmay be substantially devoid of at least two adjacently bonded perfluorinated carbons.

[0210] In In some non-limiting examples, the linker moiety RLmay be attached to a ring atom of the cyclic moiety, and may be in one of : an ortho, a meta, a para, position, with respect to the bridging moiety, if present.

[0211] In some non-limiting examples, the cyclic moiety may comprise a structure represented by at least one of Formulae (DAR-l)-(DAR-27): andrepresents

[0212] In each of Formulae (DAR-l)-(DAR-27):X and Q each independently one of: C, and a heteroatom, which, in some non-limiting examples, may act as a bonding site for the cyclic moiety to bond to one of: the linker moiety RL, and a substituent group, including but not limited to at least one of: RA, RB, and Rc.

[0213] In some non-limiting examples, X may be a heteroatom selected from one of: B, O, and N.

[0214] In some non-limiting examples, Q may be a heteroatom selected from one of: B, N, S, O, and Si.Aromatic Cyclic Moiety

[0215] In some non-limiting examples, Cy may comprise an aromatic moiety. In some non-limiting examples, the aromatic moiety may be a monocyclic aromatic moiety. In some non-limiting examples, the aromatic moiety may be a polycyclic aromatic moiety, including without limitation, a bicyclic aromatic moiety, and a tricyclic aromatic moiety. In some non-limiting examples, the aromatic moiety may be an aromatic hydrocarbon moiety. In some non-limiting examples, the aromatic moiety may be a heterocyclic aromatic moiety in which at least one C ring atom of the aromatic moiety has been replaced by a corresponding number of heteroatom(s), including, without limitation, at least one of: B, P, N, S, O, and Si. In some non-limiting examples, the aromatic moiety may comprise a six- membered ring structure, including without limitation, a phenyl.

[0216] In some non-limiting examples, Cy may comprise at least one of: a 6-20 membered aromatic moiety, a 6-15 membered aromatic moiety, and a 6-9 membered aromatic moiety. In some non-limiting examples, the aromatic moiety may comprise between 6-30 C atoms. In some non-limiting examples, the aromatic moiety may comprise one of no more than about: 15, 12, 11, 10, and 6, sp2atoms, including but not limited to atleast one of: C, B, P, N, S, O, and Si. In some non-limiting examples, the aromatic moiety may comprise one of no more than about: 15, 12, 11, 10, and 6, sp2C atoms. In some non- limiting examples, Cy may represent a phenyl moiety. In some non-limiting examples, Cy may represent a fluorinated phenyl moiety.

[0217] As used herein, the term “aromatic moiety” may refer to a ring system that exhibits aromaticity. In some non-limiting examples, such a ring system may comprise conjugated π-electrons that satisfies the Hiickel (4n+2) rule for aromaticity. Non-limiting examples of an aromatic moiety may include: a phenyl group, a biphenyl group, a naphthyl group, an anthracenyl group, and an indenyl group. Non-limiting examples of a heterocyclic aromatic moiety may include one of: a furyl group, a pyridyl group, a pyrrolyl group, a pyrimidyl group, a thienyl group, an imidazoyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinazolinyl group, an isoquinazolinyl group, a triazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a benzoxazolyl group, a benzisoxazolyl group, a benzothiazolyl group, and a benzimidazolyl group.

[0218] In some non-limiting examples, Cy may comprise a structure represented by one of Formulae (AR-l)-(AR-37):

[0219] In each of Formulae (AR-l)-(AR-37), at least one atom may attach to the linker moiety RL. In some non-limiting examples, at least one of the remaining atoms mayattach to at least one of: a substituent, including but not limited to, at least one of: RA, RB, and Rc, and another cyclic moiety. It will be understood that the term “attach to”, as used herein, may include the implicit proviso that such attachment is in accordance with the permitted valence of the atom(s).

[0220] In some non-limiting examples, the ligand moiety may comprise a plurality of cyclic moieties. In some non-limiting examples, the ligand moiety may comprise two cyclic moieties, Cy1 and Cy2. In some non-limiting examples, at least one of Cy1 and Cy2 may be an aromatic moiety. In some non-limiting examples, both Cy1 and Cy2 may be aromatic moieties. In some non-limiting examples, one of Cy1 and Cy2 may be an aromatic moiety, the other may be a non-aromatic moiety, including but not limited to: a cycloalkyl, and a cycloheteroalkyl, moiety. In some non-limiting examples, the ligand moiety may comprise three cyclic moieties linked to one another through at least one bridging moiety, wherein at least one of the three cyclic moieties may be an aromatic moiety. In some non- limiting examples, the ligand may comprise four cyclic moieties linked to one another through three bridging moieties, wherein at least one of the four cyclic moieties may be an aromatic moiety.

[0221] As used herein, the term “cycloheteroalkyl” may generally refer to a cycloalkyl group in which at least one constituent C atom has been replaced by a corresponding number of heteroatoms, including without limitation, O, N, and S. In some non-limiting examples, a cycloheteroalkyl group may comprise at least one of: a morpholine unit, a piperidine unit, a pyrrolidine unit, an azepane unit, and a piperazine unit.

[0222] In some non-limiting examples, the ligand moiety may comprise at least one cyclic moiety. In some non-limiting examples, the at least one cyclic moiety may be

[0223] The cyclic moiety Cy may comprise at least one substituent, including but not limited to: RA, RB, and Rc, attached to its ring atom(s). In some non-limiting examples, at least one of RA, RB, and Rcmay be a F-containing substituent. In some non-limiting examples, the F-containing substituent may comprise at least one of: F, a branched fluoroalkyl group, an unbranched fluoroalkyl group, a branched fluoroalkoxy group, an unbranched fluoroalkoxy group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted fluoroheterocycloalkyl group, an unsubstituted fluoroheterocycloalkyl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted fluor oheteroaryl oxy group, a unsubstituted fluor oheteroaryl oxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, and a polyfluorosulfanyl group.

[0224] In some non-limiting examples, at least one of RA, RB, and Rcmay be substantially devoid of F. In some non-limiting examples, at least one of RA, RB, and Rcmay comprise at least one of: H, chlorine (Cl), bromine (Br), iodine (I), a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted aryl group, an unsubstituted aryl group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0225] In some non-limiting examples, RAmay comprise at least one of: F, a substituted C1-C6alkyl group, an unsubstituted C1-C6alkyl group, a substituted C1-C6alkoxy, an unsubstituted C1-C6alkoxy group, a substituted C1-C6fluoroalkyl group, an unsubstituted C1-C6fluoroalkyl group, a substituted C1-C6fluoroalkoxy group, and an unsubstituted C1-C6fluoroalkoxy group. In some non-limiting examples, RAmay comprise at least one of: F, CH3, OCH3, and OCF3. In some non-limiting examples, RAmay be one of: F, CH3, and OCF3.

[0226] In some non-limiting examples, RBmay comprise at least one of: H, D, a substituted C1-C6alkyl group, an unsubstituted C1-C6alkyl group, a substituted C1-C6alkoxy group, an unsubstituted C1-C6alkoxy group, a substituted C1-C6fluoroalkyl group, an unsubstituted C1-C6a fluoroalkyl group, a substituted C1-C6fluoroalkoxy group, an unsubstituted C1-C6fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

[0227] In some non-limiting examples, RBmay be a substituent other than F. In some non-limiting examples, RBmay be one of: H, D, OCF3, CH3, and OCH3.

[0228] In some non-limiting examples, each Rcmay independently comprise one of: H, D, a substituted C1-C6alkyl group, an unsubstituted C1-C6alkyl group, a substituted C1- C6alkoxy group, an unsubstituted C1-C6alkoxy group, a substituted C1-C6fluoroalkyl group, an unsubstituted C1-C6fluoroalkyl group, a substituted C1-C6fluoroalkoxy group, an unsubstituted C1-C6fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, anarylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group. In some non-limiting examples, Rcmay be one of: H, F, OCF3, CH3, and OCH3.

[0229] In some non limiting examples, the ligand moiety may be represented by one of Chemical Formulae (PCM-1) to (PCM- 1275):

[0230] In Formulae (PCM-1) to (PCM-1275), each R is independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.

[0231] Non-limiting examples of the compound represented by Chemical Formulae (A-2) and (A-3) are listed in the table below. In some non-limiting examples, all of the ligand moieties in the compound may be identical to one another.

[0232] In some non-limiting examples, at least one of the ligand moieties, Z, may comprise a backbone, and at least one F atom attached thereto. In some non-limiting examples, the backbone may be a C-containing backbone. In some non-limiting examples, the backbone may comprise a heteroatom, including without limitation, Si.

[0233] In some non-limiting examples, at least one of the ligand moieties, Z, may comprise a linker moiety, RL, an intermediate moiety, RDand a terminal group, RT. In some non-limiting examples, at least one of the ligand moieties, Z, may comprise a branching moiety, RE. In some non-limiting examples, at least one of the ligand moieties, Z, may comprise at least one saturated bond. In some non-limiting examples, the bonds of at least one of the ligand moieties, Z, may be substantially saturated bonds, such that at least one of the ligand moieties, Z, is a saturated moiety. In some non-limiting examples, various moieties of at least one of the ligand moieties, Z, including without limitation, RL, RD, RT, and RE, may be saturated moieties.

[0234] In some non-limiting examples, at least one of the ligand moiety, Z, may be independently represented by Chemical Formula (E-l): (E-I)wherein:* may indicate a point of attachment to the cyclophosphazene core moiety, RLrepresents the linker moiety, RDrepresents the intermediate moiety, and RTrepresents the terminal moiety.

[0235] In some non-limiting examples, RLmay comprise at least one of: a single bond, O, N, S, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene, a phosphazene backbone monomer, and a phosphazene group. In some non-limiting examples, RLmay comprise at least one of: a single bond, O, N, S, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, and an unsubstituted fluoroalkylene. In some non-limiting examples, RLmay comprise at least one of: a single bond, O, N, S, an alkylene, a fluorom ethylene, and a difluoromethylene. In some non-limiting examples, RLmay be selected from: -O-, and -O-CH2-.

[0236] In some non-limiting examples, RDmay comprise at least one of: a single bond O, an ether, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted phenyl, an unsubstituted phenyl, a substituted biphenyl, an unsubstituted biphenyl, a substituted binaphthalene, an unsubstituted binaphthalene, a substituted heteroarylene, and an unsubstituted heteroarylene.

[0237] In some non-limiting examples, RDmay be represented by Chemical Formula (EB-1): (EB-1)wherein:X is each independently one of: H, D, F, and CF3; a is an integer between 0-6; and b is an integer between 0-12; and a sum of a and b is at least 1.

[0238] In some non-limiting examples, RTmay comprise at least one of: a substituted alkyl, an unsubstituted alkyl, a branched fluoroalkyl, an unbranched fluoroalkyl, a substituted heterocycloalkyl, an unsubstituted heterocycloalkyl, a substituted alkoxy, an unsubstituted alkoxy, a branched silyloxy, an unbranched silyloxy, a branched fluoroalkoxy, an unbranched fluoroalkoxy, a fluoroaryl, a polyfluorosulfanyl, and a fluorocycloalkyl.

[0239] In some non-limiting examples, RTmay comprise at least one of: F, H, CF2H, CF3, OCF3, CF2CF3, CF2CF2H, CH2CF2H, and CH2CF3.

[0240] In some non-limiting examples, at least one ligand moiety, Z, may independently comprise at least one of: a fluoroalkyl moiety, and a fluoroaryl moiety.

[0241] In some non-limiting examples, at least one ligand moiety, Z, may comprise a fluoroalkyl moiety represented by Chemical Formula (FL-1):(FL-1) where: x is an integer between 0-6, y is an integer between 1-20; andA is one of: H, D, and F.

[0242] In some non-limiting examples, x may be an integer from 1-4, y may be an integer from 3-10, and A may be one of: H and F. In some non-limiting examples, x may be one of: 1 and 2, y may be one of: 3, 4, 6, and 8, and A may be one of: H and F. In some non- limiting examples, x may be 2, y may be 1, and A may be one of: H and F. In some non- limiting examples x and y may sum to one of no more than: 15, 12, 10, and 8.

[0243] In some non-limiting examples, at least one ligand moiety, Z, may be a fluoroalkyl of: (FL-2)wherein: x is an integer from 1-6, y is an integer from 1-6, z is an integer from 1-6, u is an integer from 1-6, andA is one of: H and F.

[0244] In some non-limiting examples, x may be an integer from 1-3, y may be an integer from 1-6, z may be an integer from 1-3, and u may be an integer from 1-6. In some non-limiting examples, at least one of y and u may be one of no more than: 5, 4, and 3. In some non-limiting examples, x, y, z, and u may sum to one of no more than: 15, 12, 10, and 8.

[0245] In some non-limiting examples, at least one ligand moiety, Z, may comprise a fluoroalkoxy moiety, including without limitation, a C3-C15fluoroalkoxy.

[0246] In some non-limiting examples, at least one of: a substituted fluoroalkoxy, and an unsubstituted fluoroalkoxy, may comprise those derived by substituting at least one H atom of an alkoxy group comprising, without limitation, between about: 1-15 C atoms, with a corresponding number of F atoms. In some non-limiting examples, fluoroalkoxy may comprise those derived by attaching an ether bridging group to at least one of: a substituted fluoroalkyl, and an unsubstituted fluoroalkyl.

[0247] In some non-limiting examples, at least one of: a substituted fluoralkylsiloxy, and an unsubstituted fluoroalkylsiloxy, may comprise those derived by substituting at least one H atom of an alkylsiloxy group comprising, without limitation, between about: 1-15 C atoms, with a corresponding number of F atoms. In some non-limiting examples, fluoroalkylsiloxy may comprise those derived by attaching a siloxane bridge to at least one of: a substituted fluoroalkyl, and an unsubstituted fluoroalkyl.

[0248] In some non-limiting examples, at least one ligand moiety, Z, may comprise a continuous fluorinated chain of C species with no more than 6 fluorinated C atoms. In some non-limiting examples, such moiety may comprise at least one of: at least one of: a substituted fluoroalkyl, and an unsubstituted fluoroalkyl, in which no more than 6 fluorinated C atoms form a continuous fluorinated chain, a substituted fluoroalkoxy, and an unsubstituted fluoroalkoxy, in which no more than 6 fluorinated C atoms form a continuous fluorinated chain, and at least one of: a substituted fluoroalkylsiloxy, and an unsubstituted fluoroalkylsiloxy, in which no more than 6 fluorinated C atoms form a continuous fluorinated chain. In some non-limiting examples, at least one ligand moiety, Z, may comprise a continuous fluorinated chain of C species with one of no more than: 5, 4, and 3 fluorinated C atoms.

[0249] In some non-limiting examples, at least one ligand moiety, Z, may be represented by Chemical Formula (FCM-1):wherein: t is an integer between 1-3; u is an integer between 3-15; andZ represents one of: H, D, and F.

[0250] In some non-limiting examples, the compound may comprise, as at least one ligand moiety, L, a fluoroalkyl selected from one of Chemical Formulae (F-1)-(F-202):In some non-limiting examples, the compound may comprise at least one ligand moiety comprising a phenoxy moiety substituted with at least one of the fluoroalkyl moieties represented by one of Chemical Formulae (F-1) to (F-202).Plurality of Ligand Moieties

[0251] In some non-limiting examples, the compound may comprise a plurality of ligand moieties described herein, including without limitation, one of at least about: two, three, four, five, six, seven, and eight, ligand moieties. In some non-limiting examples, the ligand moieties may be identical. In some non-limiting examples, the ligand moieties may be different. In some non-limiting examples, the compound may be a mixed ligand compound comprising at least one first ligand moiety and at least one second ligand moiety, wherein the first ligand moiety may be structurally different from the second ligand moiety.

[0252] In some non-limiting examples, at least one ligand moiety, including without limitation, at least one of: the first ligand moiety, and the second ligand moiety, may comprise an F-containing moiety, including but not limited to, an F-containing cyclic moiety.In some non-limiting examples, one of: the first ligand moiety, and the second ligand moiety, may comprise an F-containing moiety, including but not limited to, an F-containing cyclic moiety, while the other one of: the first ligand moiety, and the second ligand moiety, may be substantially devoid of F, including without limitation, one of: H, Cl, a hydroxyl moiety, an alkyl moiety, a cycloalkyl moiety, an alkoxy moiety, an aryloxy moiety, an aryl moiety, a heteroaryloxy moiety, a cycloheteroalkyl moiety, an alkylsilyl moiety, an alkylsiloxy moiety, an amino moiety, an amine moiety, an alkylamine moiety, an arylamine moiety, a cyano moiety, a phosphazo moiety, a siloxane moiety, a silane moiety, and an organosilicon moiety. In some non-limiting examples, both the first ligand moiety and the second ligand moiety may be F-containing moieties, including but not limited to, F-containing cyclic moieties. In some non-limiting examples, at least one of: the first ligand moiety, and the second ligand moiety, may be represented by one of: Chemical Formulae (F-1) to (F-9).

[0253] In some non-limiting examples, a number of the second ligand moieties in the compound may be no more than a number of the first ligand moieties therein. In some non- limiting examples, the compound may comprise a plurality of the first ligand moieties and a single second ligand moiety. In some non-limiting examples, the first ligand moiety may be represented by one of: Chemical Formulae (F-1) to (F-9). In some non-limiting examples, a majority of ligand moieties in the compound may be represented by at least one of: Chemical Formulae (F-1) to (F-9). In some non-limiting examples, all the ligand moieties in the compound may be represented by at least one of : Chemical Formulae (F-1) to (F-9).

[0254] In some non-limiting examples, the second ligand moiety may have a F content that is no more than that of the first ligand moiety. In some non-limiting examples, the second ligand moiety may comprise a number of F atoms that is no more than that of the first ligand moiety. In some non-limiting examples, the second ligand moiety may have a degree of fluorination that is no more than that of the first ligand moiety. In some non- limiting examples, the second ligand moiety may comprise a number of C atoms that is no more than that of the first ligand moiety.

[0255] In some non-limiting examples, the first ligand moiety and the second ligand moiety may comprise different numbers of F atoms. In some non-limiting examples, numbers of F atoms of the first ligand moiety and the second ligand moiety may differ by one of no more than about: 2, 4, 6, 8, 9, 11, 13, and 15. In some non-limiting examples, the first ligand moiety and the second ligand moiety may comprise an identical number of F atoms.

[0256] In some non-limiting examples, the first ligand moiety and the second ligand moiety may comprise different numbers of C atoms. In some non-limiting examples, numbers of C atoms of the first ligand and the second ligand moiety may differ by one of no more than about: 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, and 22. In some non-limiting examples, the first ligand moiety and the second ligand moiety may comprise an identical number of C atoms.

[0257] In some non-limiting examples, a molar weight attributable to the first ligand moiety may be different from a molar weight attributable to the second ligand moiety. In some non-limiting examples, a molar weight attributable to the second ligand moiety may be no more than a molar weight attributable to the first ligand moiety.

[0258] As used herein, an “F content” of a ligand moiety may be understood to generally correspond to an amount of F contained by the ligand moiety measured by, in some non-limiting examples, at least one of: atomic percentage, weight percentage, and volume percentage, of the ligand moiety.

[0259] In some non-limiting examples, the first ligand moiety and the second ligand moiety may have different degrees of fluorination. In some non-limiting examples, a degree of fluorination may be measured by an F content of each ligand moiety. In some non- limiting examples, a degree of fluorination may be measured by a quotient of F / C, which may represent a ratio of a number of F atoms to a number of C atoms present in the ligand moiety. In some non-limiting examples, degrees of fluorination of the first ligand moiety and the second ligand moiety may differ by one of no more than about: 0.03, 0.09, 0.16, 0.18, 0.22, 0.28, 0.33, 0.45, 0.56, 0.66, 0.71, 0.78, 0.82, 0.99, 1.28, 1.56, 1.64, 1.78, and 1.85.

[0260] In some non-limiting examples, the molecular structure of the mixed ligand compound may be represented by any one of Chemical Formulae (XAA-1) - (XAA-5) and (XAB-1) - (XAB-7):

[0261] In each of Chemical Formulae (XAA-1) - (XAA-5) and (XAB-1) - (XAB-7),L1represents a first ligand moiety, L2represents a second ligand moiety.

[0262] Non-limiting examples of combinations of L1and L2which may be applicable in each of Chemical Formulae (XAA-1) - (XAA-5) and (XAB-1) - (XAB-7) are provided in the table below.

[0263] In some non-limiting examples, the compound may comprise: at least one first ligand moiety, the first ligand moiety comprising at least one cyclic moiety; and at least one second ligand moiety, the second ligand moiety comprising a fluoroalkyl moiety. In some non- limiting examples, the first ligand moiety may be represented by any one of Chemical Formulae (Fl) to (F-9), and the second ligand moiety may be represented by any one of Chemical Formulae (E-1), (FL-1), (FL-2), and (FCM-1). In some non-limiting examples, the first ligand moiety may be represented by any one of Chemical Formulae (PCM-1) to (PCM-1275). In some non-limiting examples, the second ligand moiety may comprise a fluoroalkyl selected from one of Chemical Formulae (F-1)-(F-202).Composition Comprising a Plurality of Compounds

[0264] In some non-limiting examples, a layered semiconductor device 100 comprising a composition comprising a plurality of compounds may be provided. In some non-limiting examples, at least one of the plurality of compounds may be the mixed ligand compound described herein. In some non-limiting examples, each of the plurality of compounds may comprise a core moiety and a plurality of ligand moi eties bonded to the core moiety, wherein at least one of the ligand moiety may be represented by at least one of Chemical Formulae (F-1) to (F-9). In some non-limiting examples, at least one of the plurality of compounds may be the mixed ligand compound. In some non-limiting examples, the plurality of compounds may contain at least one ligand moiety in common. In some non-limiting examples, the ligand moiety in common may be represented by one of Chemical Formulae (F-1) to (F-9). In some non- limiting examples, the composition may comprise a mixed ligand compound comprising at least one first ligand moiety and at least one second ligand moiety, and a second compound comprising the at least one first ligand moiety of the mixed ligand compound. In some non- limiting examples, such composition may be provided as a formulation, which may be used to form a thin film for various applications, including, in some non-limiting examples, semiconductors, displays, and optical coatings. In some non-limiting examples, such composition may be part of a layered semiconductor device 100.

[0265] In some non-limiting examples, at least one compound of the composition may comprise a ligand moiety that is substantially absent in another compound of the composition.

[0266] In some non-limiting examples, a number of the first ligand moieties of the second compound may be equal to a sum of a number of the first ligand moieties and the second ligand moieties of the mixed ligand compound. In some non-limiting examples, a number of the secondligand moieties in at least one of the: mixed ligand compound, and second compound, may be no more than a number of the first ligand moieties therein. In some non-limiting examples, the ligand moieties of the mixed ligand compound may be composed substantially of the first ligand moiety and the second ligand moiety. In some non-limiting examples, ligand moieties of the second compound may be composed substantially of the first ligand moieties.

[0267] In some non-limiting examples, the mixed ligand compound may comprise one second ligand moiety, and a remainder of the ligand moieties may be composed substantially of the first ligand moieties. In some non-limiting examples, the first ligand moieties may each be independently represented by at least one of: Chemical Formulae (F-1) to (F-9). In some non- limiting examples, a majority of the composition may be composed substantially of the mixed ligand compound, and a remainder of the composition may be composed substantially of the second compound. In some non-limiting examples, the mixed ligand compound may constitute one of at least about: 50, 60, 70, 75, 80, 85, 90, 95, 98, and 99% of the composition.

[0268] In some non-limiting examples, the mixed ligand compound may comprise, as a ratio of a number of the ligand moieties composed by such compound, about 1 : 1 of the first ligand moiety to the second ligand moiety. In some non-limiting examples, the composition may comprise additional mixed ligand compound(s), including without limitation, the second compound, comprising, as a ratio of the number of the ligand moieties composed by such compound(s), one of at least about: 1 :2, 2: 1, 1 :5, and 5: 1, of the first ligand moiety to the second ligand moiety. In some non-limiting examples, a percentage of the composition that is the mixed ligand compound may be at least a percentage of any other compounds of the composition.

[0269] In some non-limiting examples, each of the plurality of compounds of the composition may comprise: a first ligand moiety, and a second ligand moiety. In some non- limiting examples, each of the plurality of compounds may be the mixed ligand compound. In some non-limiting examples, a plurality of the compounds of the composition may comprise: at least one first ligand moiety, and at least one second ligand moiety. In some non-limiting examples, the plurality of the compounds of the composition may have different ratios of: a number of the first ligand moiety to a number of the second ligand moiety composed therein. In some non-limiting examples, the composition may comprise an additional compound comprising one of: the first ligand moiety, and the second ligand moiety.

[0270] In some non-limiting examples, the core moiety of each compound of the plurality of compounds may be substantially identical in chemical structure. In some non-limitingexamples, the core moiety may be a cyclophosphazene moiety, including without limitation, one of: a cyclotriphosphazene moiety, and a cyclotetraphosphazene moiety.

[0271] In some non-limiting examples, a composition comprising a plurality of compounds with substantially similar chemical structures, including without limitation, compounds comprising at least one of a common: core moiety, first ligand moiety, and second ligand moiety, may tend to exhibit a set of properties that differ from the corresponding set of properties of any single compound in the composition. Without wishing to be bound by any particular theory, it may be postulated that the composition may have applicability for providing the patterning coating 110 in at least some scenarios. In some non-limiting examples, it has been found that a patterning coating 110 comprising a composition comprising: a first compound with a low melting point and a low initial sticking probability, and a second compound with a high melting point and a high initial sticking probability, may tend to exhibit a melting point that is at least that of the first compound, and an initial sticking probability that is no more than that of the second compound. In some non-limiting examples, such a composition may provide an ability to modulate at least one property of the patterning coating 110 by, including without limitation, adjusting individual quantities of compounds in the composition.

[0272] Without wishing to be bound by any particular theory, it may be postulated that a substantially small difference in molar weights of the compounds in the composition may have applicability, in at least some scenarios. In some non-limiting examples, compounds with a substantially small difference in molar weights may tend to exhibit similar sublimation characteristics, which, in some non-limiting examples, may correspond to similar sublimation temperatures and partial pressures exhibited by the compounds at a given temperature. In some non-limiting examples where the composition is sublimed to provide the patterning coating 110, the compounds in the composition, including without limitation, the compounds with a substantially small difference in molar weights, may facilitate in providing a substantially homogeneous patterning coating 110, even over a prolonged deposition period.

[0273] In some non-limiting examples, the compounds of the composition may exhibit substantially the same vapor pressure.Linked Cyclophosphazene Compound

[0274] In some non-limiting examples, the layered semiconductor device 100 may comprise a linked cyclophosphazene compound comprising: a plurality of cyclophosphazenemoieties, each cyclophosphazene moiety being bonded to at least one other cyclophosphazene moiety by at least one tethering moiety; and a plurality of ligand moieties, as described herein, bonded to the plurality of cyclophosphazene moieties, at least one of the ligand moieties being represented by one of: Chemical Formulae (F-1) to (F-9). In some non-limiting examples, the plurality of cyclophosphazene moieties may comprise a first cyclophosphazene moiety and a second cyclophosphazene moiety; wherein a first tethering moiety bonds the first cyclophosphazene moiety to the second cyclophosphazene moiety. In some non-limiting examples, chemical structures of the plurality of cyclophosphazene moieties may be one of: identical, and different, to one another. In some non-limiting examples, at least one of: the patterning coating 110, and the patterning material 411, may comprise such a linked cyclophosphazene compound.

[0275] In some non-limiting examples, at least one P atom of the plurality of cyclophosphazene moieties may be bonded to the tethering moiety.

[0276] In some non-limiting examples, a P atom of at least one of the plurality of cyclophosphazene moieties may be substituted, including without limitation, by at least one substituent as described herein. In some non-limiting examples, at least one of the plurality of ligand moieties may be a low surface tension moiety.

[0277] In some non-limiting examples, the linked cyclophosphazene compound may comprise at least three cyclophosphazene moieties. In some non-limiting examples, the linked cyclophosphazene compound may comprise a first cyclophosphazene moiety, a second cyclophosphazene moiety, and a third cyclophosphazene moiety.

[0278] In some non-limiting examples, the third cyclophosphazene moiety may bond to at least one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by at least one tethering moiety. In some non-limiting examples, the third cyclophosphazene moiety may bond to a first tethering moiety that connects the first cyclophosphazene moiety to the second cyclophosphazene moiety. In some non-limiting examples, the third cyclophosphazene moiety may bond to one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety, by a second tethering moiety that may be one of structurally: identical, and different, to the first tethering moiety.

[0279] In some non-limiting examples, the compound may be a linked cyclophosphazene compound represented by one of Chemical Formulae (LP-1)-(LP-17):wherein: each L independently represents a ligand moiety; at least one L is represented by one of: Chemical Formulae (F-1) to (F-9);each Lcindependently represents a tethering moiety comprising at least one of: a single bond, C, CH, CH2, CR1, C(R1)2, CHF, CF2, nitrogen (N), NH, NR1, sulfur (S), oxygen (O), an ether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted arylene, an unsubstituted arylene, a substituted fluoroarylene, an unsubstituted fluoroarylene, a substituted heteroarylene, an unsubstituted heteroarylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted heteroalkylene, an unsubstituted heteroalkylene, a substituted heterocycloalkylene, an substituted heterocycloalkylene, a substituted adamantane moiety, an unsubstituted adamantane moiety, a substituted diamondoid moiety, and an unsubstituted diamondoid moiety; and each R1is independently at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, an aryl group, a haloaryl group, a heteroaryl group, a fluoroaryl group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.

[0280] Without wishing to be bound by any particular theory, it may be postulated that a linked cyclophosphazene compound represented by any one of Chemical Formulae (LP-1) to (LP-17) may have applicability as at least one of: a patterning coating 110, and a patterning material 411, that facilitates selective deposition of a deposited material 531. In some non- limiting examples, it has been found that the use of such patterning material 411 may provide at least one of: a substantially high deposition contrast; a substantially low propensity for a patterning coating 110 comprising the patterning material 411, to undergo crystallization; and a substantially low propensity for the patterning coating 110 comprising the patterning material 411, to undergo cohesive failure, including without limitation, delamination.

[0281] In some non-limiting examples, the tethering moiety Lc may comprise at least one of: a cyclic moiety as described herein, and an acyclic moiety.

[0282] In some non-limiting examples, the tethering moiety Lcmay form a chain structure with the first cyclophosphazene moiety and the second cyclophosphazene moiety.

[0283] In some non-limiting examples, the tethering moiety Lcmay form a cyclic structure with a P atom of at least one of: the first cyclophosphazene moiety, and the second cyclophosphazene moiety.

[0284] In some non-limiting examples where the tethering moiety comprises a heteroatom, the heteroatom may act as a bonding site for at least one of the: firstcyclophosphazene moiety, and the second cyclophosphazene moiety, where the heteroatom is available for formation of such bond(s).

[0285] In some non-limiting examples, the tethering moiety may be substantially devoid of at least two adjacently bonded perfluorinated carbons. In some non-limiting examples, the tethering moiety may be substantially devoid of one of: a -CF3unit, and a -CF2-unit, except for those which are attached, for example, to an aromatic group by one of: an ether, and an amine, moiety.

[0286] In some non-limiting examples, the tethering moiety may have a molar mass of one of at least about: 12, 13, 15, 16, 20, 25, 30, 40, 50, 70, 100, 120, 130, and 150, g / mol.

[0287] In some non-limiting examples, the tethering moiety Lc may comprise at least one cyclic moiety as described herein.

[0288] In some non-limiting examples, the cyclic moiety may be one of: directly, and indirectly, connected to at least one of the plurality of cyclophosphazene moieties, including without limitation, the first cyclophosphazene moiety, and the second cyclophosphazene moiety. In some non-limiting examples, a ring atom of the at least one cyclic moiety may be directly connected to at least one P atom of at least one of the plurality of cyclophosphazene moieties. In some non-limiting examples, a ring atom of the at least one cyclic moiety may be connected to at least one P atom of at least one of the plurality of cyclophosphazene moieties via a spacer moiety.

[0289] In some non-limiting examples, the spacer moiety Lsmay be bonded to a P atom of the cyclophosphazene moiety, and one of: a C atom, and a heteroatom, of the cyclic moiety. In some non-limiting examples, the total number of spacer moieties may be no more than a total number of cyclophosphazene moieties in the linked cyclophosphazene compound.

[0290] In some non-limiting examples, the spacer moiety may comprise at least one of: a single bond, O, S, N, C, an ether, a thioether, a substituted amine, an unsubstituted amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, a substituted arylene, an unsubstituted arylene, a substituted heteroarylene, and an unsubstituted heteroarylene. In some non-limiting examples, the spacer moiety may comprise O.

[0291] In some non-limiting examples, the tethering moiety, Lc, may comprise an acyclic moiety, including, without limitation, at least one of: a single bond, C, CH, CH2, CR4, C(R4)2,CHF, CF2, N, NH, NR4, S, O, an ether, a substituted amine (including without limitation, a secondary, and a tertiary, amine), an unsubstituted amine (including without limitation, asecondary, and a tertiary, amine), a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted heteroalkylene, and an unsubstituted heteroalkylene. In some non-limiting examples, R4each may independently represent at least one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a cycloalkyl group, an alkoxy group, a haloalkoxy group, a fluoroalkoxy group, a carbonyl group, a nitro group, a sulfide group, a sulfonyl group, an alkenyl group, and an alkynyl group.

[0292] In some non-limiting examples, Lcmay comprise a phosphazene moiety, including without limitation, at least one of: a linear, and a branched moiety, which may be represented as (N=P)x, where x is an integer. In some non-limiting examples, the phosphazene moiety may be provided in conjunction with one of the plurality of cyclophosphazene moieties of the linked cyclophosphazene compound.

[0293] In some non-limiting examples, an atom of the acyclic moiety may be directly connected to at least one P atom of at least one of the plurality of cyclophosphazene moieties. In some non-limiting examples, an atom of the acyclic moiety may be indirectly connected to at least one P atom of at least one of the plurality of cyclophosphazene moieties via the spacer moiety as described herein.

[0294] In some non-limiting examples, the compound may exhibit substantially no absorption of light in at least one of: the visible spectrum, and the NIR spectrum, including without limitation, at a wavelength of between about: 350-1,400 nm.

[0295] In some non-limiting examples, the compound may have an optical gap of one of at least about: 3.4, 3.5, 4.1, 5.0, and 6.2, eV.

[0296] In some non-limiting examples, the compound may exhibit substantially no photoluminescence in a wavelength range of between about: 380-700 nm.

[0297] In some non-limiting examples, the compound may be solid at room temperature and pressure.

[0298] In some non-limiting examples, the compound may be one of: a small molecule, and an oligomeric rubber.

[0299] In some non-limiting examples, the compound may be an oligomer.

[0300] In some non-limiting examples, the compound may comprise no more than at least one of: 20, 18, 15, 13, 10, and 8 monomer units. In some non-limiting examples, the monomer unit comprises a phosphazo moiety.

[0301] In some non-limiting examples, a molar weight of the compound is one of at least about: 100, 500, 750, 1,000, 1,250, 1,500, 1,750, and 2,000, g / mol.

[0302] In some non-limiting examples, a molar weight of the compound is one of no more than about: 100,000, 75,000, 10,000, 8,000, 7,000, and 5,000, g / mol.

[0303] In some non-limiting examples, an atomic ratio of a total number of F atoms bonded to sp3C atoms to a total number of F atoms bonded to sp2C atoms in the molecule is between 0 to 1.

[0304] In some non-limiting examples, the compound may be substantially devoid of at least one of: a perfluoroalkyl, and a polyfluoroalkyl, moiety.

[0305] In some non-limiting examples, a percentage of a molar weight of the compound that is attributable to F atoms may be one of no more than about: 50%, 55%, 60%, 65%, and 70%.

[0306] In some non-limiting examples, a percentage of a molar weight of the compound that is attributable to F atoms may be one of at least about: 10%, 15%, 20%, 25%, and 30%.

[0307] In some non-limiting examples, an atomic ratio of F:C of the at least one ligand moiety, L, may be one of between about: 1 : 1-1 :10, 1 : 1-1 :7, 1 : 1.2-: 1 :7, 1 : 1.5-1 :8, 1 :2-1 :6, and 1 : 1-1 :2.

[0308] In some non-limiting examples, an atomic ratio of F:C of the compound may be one of between about: 1 : 1-1 :10, 1 : 1-1 :7, 1 : 1.2-: 1 :7, 1 : 1.5-1 :8, 1 :2-1 :6, and 1 : 1-1 :2.

[0309] In some non-limiting examples, a weight percentage of F atoms in the at least one ligand moiety, / ., may one of between about: 5-70%, 7-65%, 10-60%, 15%-55%, and 30%-50%.

[0310] In some non-limiting examples, a weight percentage of F atoms in the compound may be between about: 1-70%, 5-65%, 7-55%, and 10-50%.

[0311] In some non-limiting examples, the compound may exhibit a solubility of one of at least about: 10 mg / mL, 50 mg / mL, 80 mg / mL, 100 mg / mL, 150 mg / mL, 250 mg / mL, 500 mg / mL, 1 g / mL, 1.5 g / mL, 2 g / mL, 2.5 g / mL, and 3 g / mL, in an organic solvent at around 25°C.

[0312] In some non-limiting examples, the organic solvent may be at least one of: N- Methyl-2-pyrrolidone (NMP), acetone, isopropanol (IP A), and ethanol. In some non-limiting examples, the organic solvent may be NMP.

[0313] In some non-limiting examples, the compound does not exhibit cold crystallization at between about 0-50°C.

[0314] In some non-limiting examples, the compound may exhibit viscoelasticity. In some non-limiting examples, the compound may exhibit viscoelasticity at about 25°C. In some non-limiting examples, the compound may be in a rubbery state at about 25°C.

[0315] In some non-limiting examples, the compound may exhibit a fragility of no more than: 120, 100, 80, and 60.Deposition Contrast

[0316] In some non-limiting examples, a material, including without limitation, a patterning material 311, that may function as an NIC for a given at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, may have a substantially high deposition contrast when deposited on a substrate 10.

[0317] In some non-limiting examples, if a substrate 10 tends to act as a nucleation- promoting coating (NPC) 620, and a portion thereof is coated with a material, including without limitation, a patterning material 311, that may tend to function as an NIC against deposition of a deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, a coated portion (first portion 101) and an uncoated portion (second portion 102) may tend to have different at least one of: initial sticking probabilities, and nucleation rates, such that the deposited material 431 deposited thereon may tend to have different average film thicknesses.

[0318] As used herein, a quotient of an average film thickness of the deposited material 431 deposited in the second portion 102 divided by an average film thickness of the deposited material in the first portion 101 in such scenario may be generally referred to as a deposition contrast. Thus, if the deposition contrast is substantially high, an average film thickness of the deposited material 431 in the second portion 102 may be substantially at least that of an average film thickness of the deposited material 431 in the first portion 101.

[0319] In some non-limiting examples, a material, including without limitation, a patterning material 311, that may function as an NIC for a given deposited material 431, may have a substantially high deposition contrast when deposited on a substrate 10.

[0320] In some non-limiting examples, there may be a negative correlation between the initial sticking probability of at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within thedevice 100, against deposition of the deposited material 431 and a deposition contrast thereof, that is, a low initial sticking probability may be substantially correlated with a high deposition contrast.

[0321] In some non-limiting examples, if the deposition contrast is substantially high, there may be little to no deposited material 431 deposited in the first portion 101, when there is sufficient deposition of the deposited material 431 to form a closed coating 140 thereof in the second portion 102.

[0322] In some non-limiting examples, if the deposition contrast is substantially low, there may be a discontinuous layer 160 of at least one particle structure 150 of the deposited material 431 deposited in the first portion 101, when there is sufficient deposition of the deposited material 431 to form a closed coating 140 in the second portion 102.

[0323] In some non-limiting examples, there may be scenarios calling for the formation of a discontinuous layer 160 of at least one particle structure 150 of the deposited material 431, in the first portion 101, when an average layer thickness of a closed coating 140 of the deposited material 431 in the second portion 102 is substantially small, including without limitation, one of no more than about: 100, 50, 25, and 15, nm, including without limitation, the formation of nanoparticles (NPs) in the first portion 101, where absorption of light by such NPs is called for, including without limitation, to protect an underlying layer 610 from light having a wavelength of no more than about 460 nm.

[0324] In some non-limiting examples, in such scenarios, there may be applicability for a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15.

[0325] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low deposition contrast against deposition of a deposited material 431, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, where an average layer thickness of the deposited material 431 in the first portion 101 is large, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.

[0326] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low deposition contrast against deposition of a deposited material 431, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, scenarios calling for at least one of: the substantial absence of a closed coating 140, and a high density of, particle structures150 in the first portion 101, including without limitation, when an average layer thickness of the deposited material 431 in the second portion 102 is large, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm, including without limitation, in some scenarios calling for the substantial absence of absorption of light in at least one of the visible spectrum and the NIR spectrum, including without limitation, scenarios calling for an increased transparency to light having a wavelength that is at least about 460 nm.

[0327] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low deposition contrast against deposition of a deposited material 431, may have applicability in some scenarios calling for at least one of a discontinuous layer 160 of, and a low density of, particle structures 150 of the deposited material 431 in the first portion 101, when an average layer thickness of a closed coating 140 of the deposited material 431 in the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm. In some non-limiting examples, a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15 may have applicability in some scenarios when an average layer thickness of the deposited material 431 in the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.

[0328] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially high deposition contrast against deposition of a deposited material 431, may have reduced applicability in some scenarios calling for a reduced deposition contrast, including without limitation, where an average layer thickness of the deposited material 431 in the first portion 101 is substantially low, including without limitation, one of no more than about: 100, 50, 25, and 15, nm, including without limitation, in some scenarios that call for a deposition of a discontinuous layer 160 of at least one particle structure 150 of the deposited material 431 in the second portion 102.

[0329] In some non-limiting examples, a material, including without limitation, a patterning material 311, may tend to have a substantially low deposition contrast if the initial sticking probability of such material against deposition of at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, is substantially high.Transmittance

[0330] In some non-limiting examples, at least one of: the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a transmittance for light of at least a threshold transmittance value, after being subjected to a vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li and a Ag-containing material, including without limitation, MgAg.

[0331] In some non-limiting examples, such transmittance may be measured after exposing the exposed layer surface 11 of at least one of: the patterning coating 110, and the patterning material 411, formed as a thin film, to a vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg, under typical conditions that may be used for depositing an electrode of an opto-electronic device 200, which in some non-limiting examples, may be a cathode of an organic light-emitting diode (OLED) device 200.

[0332] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg, may comprise: maintaining a vacuum pressure at a reference pressure, including without limitation, of one of about: 10-4Torr, 10-5Torr, 10-6Torr, 10-7Torr, and 10-8Torr; the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg, being substantially consistent with a reference deposition rate, including without limitation, of about 1 angstrom (A) / sec, which in some non-limiting examples, may be monitored using a quartz crystal microbalance (QCM); the vapor flux 532 of the deposited material 531 being directed toward the exposed layer surface 11 at an angle that is substantially close to normal to a plane of the exposed layer surface 11; the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg, until a reference average layer thickness, including without limitation, of about 15 nm, is reached, and upon such reference average layer thicknessbeing attained, the exposed layer surface 11 not being further subjected to the vapor flux of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg.

[0333] In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg, may be substantially at room temperature (e.g. about 25°C). In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material a Ag-containing material, including without limitation, MgAg, may be positioned about 65 cm away from an evaporation source by which the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing material, including without limitation, MgAg, is evaporated.

[0334] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum, which may be one of at least about: 450 nm, 460 nm, 500 nm, 520 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in at least one of: the infrared (IR), and near IR (NIR), spectrum. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength of one of about: 700 nm, 850 nm, 900 nm, and 1,000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through a sample. In some non-limiting examples, the threshold transmittance value may be one of at least about: 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0335] It would be appreciated by a person having ordinary skill in the relevant art that high transmittance may generally indicate an absence of a closed coating 140 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, Li, and a Ag-containing materials, including without limitation, MgAg. On the other hand, low transmittance may generally indicate presence of a closed coating 140 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, Li, and Ag-containing materials, includingwithout limitation, MgAg, since metallic thin films, particularly when formed as a closed coating 140, may exhibit a high degree of absorption of light.

[0336] A series of samples was fabricated to measure the transmittance of an example material, as well as to visually observe whether a closed coating 140 of a deposited material was formed on the exposed layer surface 11 of such example material.

[0337] The molecular structures of the example materials used herein are set out in Table 1 below.Synthesis of EM-42

[0338] To a 500 mL round bottom flask equipped with a stirring bar, 2, 3,5,6- tetrafluorophenol (47.0 g, 282.9 mmol, 10.0 equiv.) was added. The round bottom flask was then purged with argon (Ar) for 10 minutes. 250 mL anhydrous acetone was added to the round bottom flask via a cannula, followed by the addition of K2CO3(46.9 g, 12.0 equiv.). The mixture was heated at 60°C, during which octachlorocyclophosphazene (OCCP, 13.1 g, 28.3 mmol, 1.0 equiv.) was added. After 20 hours of heating at 60°C, the heating was stopped and the mixture was allowed to cool to room temperature. The mixture was filtered under suction using a Buchner funnel with medium frit (topped with a celite layer of approximately 1 cm). The filtrate was reduced with a rotary evaporator to yield a white solid (50 g). The white solid was triturated in 400 mL of IP A overnight, then filtered under suction using a Buchner funnel with medium frit. The solid obtained after filtration was washed with IPA (4x lOOmL) to yield the final product (white solid, 18g). The final product was analysed by high resolution electrospray ionisation mass spectrometry (HRESI-MS); m, ''z Peak: 1500.89.General procedure for the synthesis of EM-84 - EM-97, EM-99 - EM-116, EM-120, EM- 121, and EM-128 - EM-131

[0339] To a 250 mL round bottom flask equipped with a stirring bar, a chlorocyclophosphazene (3.01 mmol, 1.0 equiv.), and one of: an alcohol R-OH, and a thiol R- SH (30.1 mmol, 10.0 equiv.), were added to suspend in acetonitrile (ACN, 50 mL). The mixture was placed in an ice bath, followed by the addition of K2CO3(4.16 g, 30.1 mmol, 10.0 equiv.). The reaction was allowed to proceed and was monitored by NMR. Upon reaction completion, the reaction mixture was filtered under suction. Water was added to the filtrate to crash out a solid. The solid was filtered under suction and recrystallized to yield the final product, which was analysed by HRESI-MS. The reactants and the MS results are summarised in Table 2 below.Table 2

[0340] To a 250 mL round bottom flask equipped with a stirring bar, an OCCP (3.01 mmol, 1.0 equiv.), 2,3,6-trifluorophenol (30.1 mmol, 10.0 equiv.), and 2,3,5,6-tetrafluorophenol (30.1 mmol, 10.0 equiv.), were added to suspend in acetonitrile (ACN, 50 mL). The mixture was placed in an ice bath, followed by the addition of K2CO3(4.16 g, 30.1 mmol, 10.0 equiv.). The reaction was allowed to proceed and was monitored by NMR. Upon reaction completion, the reaction mixture was filtered under suction. Water was added to the filtrate to crash out a solid. The solid was filtered under suction and recrystallized to yield the final product, which was analysed by HRESI-MS. As summarized in Table 3 below, the HRESI-MS result suggests that a composition comprising a plurality of compounds (herein referred to as “EC-1”) was formed.Table 3Synthesis of Example Composition 2 (EC -2)

[0341] To a 250 mL round bottom flask equipped with a stirring bar, an OCCP (3.01 mmol, 1.0 equiv.), phenol (30.1 mmol, 10.0 equiv.), and 2,3,5,6-tetrafluorophenol (30.1 mmol, 10.0 equiv.), were added to suspend in acetonitrile (ACN, 50 mL). The mixture was placed in an ice bath, followed by the addition of K2CO3(4.16 g, 30.1 mmol, 10.0 equiv.). The reaction was allowed to proceed and was monitored by NMR. Upon reaction completion, the reaction mixture was filtered under suction. Water was added to the filtrate to crash out a solid. The solid was filtered under suction and recrystallized to yield the final product, which was analysed by HRESI-MS. As summarized in Table 4 below, the HRESI-MS result suggests that a composition comprising a plurality of compounds (herein referred to as “EC-2”) was formed.Table 4Synthesis of Example Composition 3 (EC-3)

[0342] To a 250 mL round bottom flask equipped with a stirring bar, an OCCP (3.01 mmol, 1.0 equiv.), 2, 3, 5 -trifluorophenol (30.1 mmol, 10.0 equiv.), and 2,3,5,6-tetrafluorophenol (30.1 mmol, 10.0 equiv.), were added to suspend in acetonitrile (ACN, 50 mL). The mixture was placed in an ice bath, followed by the addition of K2CO3(4.16 g, 30.1 mmol, 10.0 equiv.). The reaction was allowed to proceed and was monitored by NMR. Upon reaction completion, the reaction mixture was filtered under suction. Water was added to the filtrate to crash out a solid.The solid was filtered under suction and recrystallized to yield the final product, which was analysed by HRESI-MS. As summarized in Table 5 below, the HRESI-MS result suggests that a composition comprising a plurality of compounds (herein referred to as “EC-3”) was formed. Table 5Synthesis of Exam le Composition 4 (EC-4)

[0343] To a 250 mL ound bottom flask equipped with a stirring bar, an OCCP (3.01 mmol, 1.0 equiv.), 2,3 -difluorophenol (30.1 mmol, 10.0 equiv.), and 2,3,5,6-tetrafluorophenol (30.1 mmol, 10.0 equiv.), were added to suspend in acetonitrile (ACN, 50 mL). The mixture was placed in an ice bath, followed by the addition of K2CO3(4.16 g, 30.1 mmol, 10.0 equiv.). The reaction was allowed to proceed and was monitored by NMR. Upon reaction completion, the reaction mixture was filtered under suction. Water was added to the filtrate to crash out a solid. The solid was filtered under suction and recrystallized to yield the final product, which was analysed by HRESI-MS. As summarized in Table 6 below, the HRESI-MS result suggests that a composition comprising a plurality of compounds (herein referred to as “EC-4”) was formed. Table 6

[0344] Those having ordinary skill in the relevant art will appreciate that samples having little to no deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg, present thereon may be substantially transparent, while samples with substantial amounts of at least one of: a metal, and an alloy, deposited thereon,including without limitation, as a closed coating 140, may in some non-limiting examples, exhibit a substantially reduced transmittance. Accordingly, the performance of various example coatings as a patterning coating 110 may be assessed by measuring transmission through the samples, which may be inversely correlated to at least one of: an amount, and an average layer thickness, of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, in the form of at least one of Yb, Ag, Mg, and a Ag- containing material, including without limitation, MgAg, being deposited thereon, since metallic thin films, including without limitation, when formed as a closed coating 140, may exhibit a high degree of absorption of light.Experiment 1

[0345] A series of samples was fabricated to measure the transmittance of an example material. Each sample was prepared by depositing, on a glass substrate 10, an approximately 10 nm thick layer of an electron transport material, followed by depositing thereon, an approximately 30 nm thick coating of an example material. The example material was varied between the samples. For each sample, the exposed layer surface 11 of the coating was subjected to an open mask deposition of a deposited material 531, comprising Yb:LiF (1 : 1 (vol:vol)), at a rate of about 1 A / sec, until a reference thickness of about 1.5 nm was achieved, followed by MgAg (MgAg = 1 :9 (vol: vol)) until a reference thickness of about 15 nm was achieved. Once the samples were fabricated, light transmittance measurements were taken to determine a relative amount of the deposited material deposited on the exposed layer surface 11 of the patterning coating 110. Those having ordinary skill in the relevant art will appreciate that samples having little to no metal present thereon may be substantially transparent, while samples with metal deposited thereon, particularly as a closed coating, may generally exhibit a substantially lower light transmittance.

[0346] The transmittance at wavelengths of 450, 520, and 850, nm after each sample was subjected to a vapor flux 532 of Yb:LiF and MgAg was measured and summarized in Table 7:Table 7Experiment 2

[0347] A series of samples was fabricated to measure the transmittance of an example material. Each sample was prepared by depositing, on a glass substrate 10, an approximately 20 nm thick layer of a hole transport material, followed by an approximately 20 nm thick layer of anelectron transport material. This is followed by depositing thereon an approximately 30 nm thick coating of an example material. The example material was varied between the samples. For each sample, the exposed layer surface 11 of the coating was subjected to an open mask deposition of a deposited material 531 comprising MgAg (Mg:Ag = 1 :9 (vokvol)), at a rate of about 1 A / sec, until a reference thickness of about 15 nm was achieved. Once the samples were fabricated, light transmittance measurements were taken to determine a relative amount of the deposited material deposited on the exposed layer surface 11 of the patterning coating 110. Those having ordinary skill in the relevant art will appreciate that samples having little to no metal present thereon may be substantially transparent, while samples with metal deposited thereon, particularly as a closed coating, may generally exhibit a substantially lower light transmittance.

[0348] The transmittance at wavelengths of 450, 520, and 850, nm after each sample was subjected to a vapor flux 532 of MgAg was measured and summarized in Table 8:Table 8some non-limiting examples, a nucleation modifying material comprising a core moiety, and at least one ligand moiety bonded to the core moiety, wherein the ligand moiety comprises: F, and a cyclic moiety, may exhibit different EM transmittance characteristics. In some non-limiting examples, nucleation modifying materials comprising a nucleation modifying material comprising a core moiety, and at least one ligand moiety bonded to the core moiety, wherein the ligand moiety comprises: F, and a cyclic moiety, including without limitation, EM-42, EM-88, EM-91, EM-97, EM-99, EM-102, EM-105, EM-107 to EM-109, EM-111 to EM-116, EM-120, and EC-1 to EC-4 may exhibit EM transmittance characteristics that are at least that of anucleation modifying material that is substantially devoid of: a core moiety, and at least one ligand moiety bonded to the core moiety, wherein the ligand moiety comprises: F, and a cyclic moiety, including without limitation, PDMS, EM-11, EM- 12, and EM- 103. In some non- limiting examples, nucleation modifying materials that exhibit a substantially high transmittance in a visible wavelength range, including without limitation, one of about: 450 nm, and 520 nm, and a substantially low transmittance in a near-infrared wavelength range, including without limitation: about 850 nm, may have applicability in scenarios calling for substantially high transmittance in a visible wavelength range, including without limitation, one of: 450 nm, and 520 nm. Examples of such nucleation modifying materials may include, but are not limited to, EM-88, EM-99, EM-102, EM-105, EM-107, EM-108, EM-109, EM-111-EM-113, EM-116, and EC-3. In some non-limiting examples, EM-42, EM-88, EM-95, EM-97, EM-99, EM- 102, EM- 105, EM-107, EM-108, EM-109, EM-111-EM-l 15, EM-120, and EC-l-EC-4, each exhibiting a transmittance of more than 50% at a wavelength of 520 nm, may have applicability in some scenarios calling for a substantially low transmittance reduction at such wavelength compared, in some non-limiting examples, to EM-116 and EM-91, each exhibiting each exhibiting a transmittance of no more than 50% at 520 nm. In some non-limiting examples, EM-42, EM-88, EM-99, EM-102, EM-105, EM-107-EM-109, EM-111-116, EM-120, and EC-1-EC-4, each exhibiting a transmittance of more than 50% at a wavelength of 450 nm, may have applicability in some scenarios calling for a substantially low transmittance reduction at such wavelength compared, in some non-limiting examples, to EM-91, EM-95, and EM-97. In some non-limiting examples, EM-42, EM-88, EM-114, EM-115, EM-120, EC-1, EC-2, EC-4 may have applicability in scenarios calling for a substantially high transmittance in both the visible and NIR wavelengths.Surface Energy

[0350] A characteristic surface energy, as used herein, in some non-limiting examples, with respect to a material, may generally refer to a surface energy determined from such material.

[0351] In some non-limiting examples, a characteristic surface energy may be measured from a surface formed by the material deposited (coated) in a thin film form.

[0352] Various methods and theories for determining the surface energy of a solid are known.

[0353] In some non-limiting examples, a surface energy may be calculated (derived) based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure the contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, a surface energy of a solid surface may be equal to the surface tension of a liquid with the highest surface tension that completely wets the surface.

[0354] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method, as further detailed in W. A. Zisman, Advances in Chemistry A3 (1964), pp. 1-51.

[0355] In some non-limiting examples, a characteristic surface energy of a material, including without limitation, a patterning material 411, in a coating, including without limitation, a patterning coating 110, may be determined by depositing the material as a substantially pure coating (e.g. a coating formed by a substantially pure material) on a substrate 10 and measuring a contact angle thereof with an applicable series of probe liquids.

[0356] In some non-limiting examples, a Zisman plot may be used to determine a maximum value of surface tension that would result in complete wetting (i.e. a contact angle 0c of 0°) of the surface.

[0357] In some non-limiting examples, a coating, including without limitation, the patterning coating 110, formed by the compound may exhibit a surface energy of one of at least about: 19 dynes / cm, 20 dynes / cm, 21 dynes / cm, 22 dynes / cm, and 23 dynes / cm.

[0358] In some non-limiting examples, a coating, including without limitation, the patterning coating 110, formed by the compound may exhibit a surface energy of one of no more than about: 29 dynes / cm, 28 dynes / cm, 26 dynes / cm, 25 dynes / cm, 24 dynes / cm, and 23 dynes / cm.

[0359] In some non-limiting examples, a coating, including without limitation, the patterning coating 110, formed by the compound may exhibit a surface energy of one of between about: 19-25 dynes / cm, 20-25 dynes / cm, 21-24 dynes / cm, 19-29 dynes / cm, and 22-24 dynes / cm.

[0360] A material which has applicability for use in providing the patterning coating 110 may generally have a low surface energy when deposited as a thin film (coating) on a surface. In some non-limiting examples, a material with a low surface energy may exhibit low intermolecular forces.

[0361] Without wishing to be bound by any particular theory, it is now postulated that a material with a substantially high surface energy may have applicability at least in some applications that call for a high temperature reliability.

[0362] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method.

[0363] In some non-limiting examples, a series of samples was fabricated to measure the critical surface tension of the surfaces formed by the various materials. The results of the measurement are summarized in Table 9:Table 9

[0364] Based on the foregoing measurement of the critical surface tension in Table 9 and the transmittance results presented in Tables 7 and 8, it was found that materials that form substantially low surface energy surfaces when deposited as a coating, including without limitation, a patterning coating 110, which in some non-limiting examples, may be those having a critical surface tension of between about: 19-25 dynes / cm, may have applicability for forming the patterning coating 110 to inhibit deposition of a deposited material 531 thereon, including without limitation, at least one of Yb, Ag, Mg, Li, and Ag-containing materials, including without limitation, MgAg.

[0365] Without wishing to be bound by any particular theory, it may be postulated that materials that form a surface having a surface energy that is no more than, in some non-limitingexamples, about 15 dynes / cm, may have reduced applicability as a patterning material 411 in some scenarios, as such materials may exhibit at least one of: substantially poor adhesion to layer(s) surrounding such materials, a low melting point, and a low sublimation temperature.

[0366] In some non-limiting examples, the surface of at least one of: the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, comprising the compounds described herein, may exhibit a surface energy of one of no more than about: 23 dynes / cm, 22 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, and 15 dynes / cm..

[0367] In some non-limiting examples, there may be scenarios calling for a patterning material 411 that has a substantially low surface energy that is not unduly low, including without limitation, between about 15-23 dynes / cm.

[0368] In some non-limiting examples, the surface of at least one of: the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, comprising the compounds described herein, may exhibit a surface energy that may be one of between about: 15-23 dynes / cm, 17-23 dynes / cm, 19-23 dynes / cm, and 20-23 dynes / cm.TemperatureGlass Transition Temperature

[0369] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of: a film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a glass transition temperature that is one of: one of at least about: 300°C, 200°C, 170°C, 150°C, 130°C, 120°C, 110°C, and 100°C, and one of no more than about: 20°C, 0°C, -20°C, -30°C, and -50°C.

[0370] It may be postulated that, in some non-limiting examples, a patterning material 311 that does not undergo a glass transition while within a typical operating temperature range, including without limitation, between about 25°C-80°C, for a consumer electronic device, mayhave applicability in some scenarios as it may contribute to enhanced stability of such device 100.

[0371] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of: a film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a glass transition temperature that is one of: one of at least about: 150°C, 130°C, 120°C, 110°C, and 100°C, and one of no more than about: 20°C, 0°C, -20°C, -30°C, and -50°C.

[0372] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof, may have a glass transition temperature, at atmospheric pressure, that is one of no more than about: 65°C, 55°C, 45°C, 35°C, 30°C, and 25°C.

[0373] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof, may have a glass transition temperature, at atmospheric pressure, that is one of at least about: : -50°C, -30°C, -25°C, -20°C, -15°C, -10°C, -5°C, and 0°C.

[0374] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof, may have a glass transition temperature, at atmospheric pressure, that is one of between about: -30-60°C, -20-50°C, -10-50°C, 0-40°C, and 5-35°C.Examples

[0375] In some non-limiting examples, the glass transition temperatures (Tg) of select example materials was measured using differential scanning calorimetry. Specifically, the glass transition temperature was determined for each example material during the second heating cycle at a heating rate of 10°C / min and under atmospheric pressure. The results of the measurement are summarized in Table 10:Table 10Sublimation Temperature

[0376] In some non-limiting examples, a material, including without limitation, a patterning material 411, having substantially low inter-molecular forces may tend to exhibit a substantially low sublimation temperature.

[0377] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness of a closed coating 140 of a deposited film of the material.

[0378] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof, may have a sublimation temperature of one of at least about: 150°C, 125°C, 110°C, 100°C, 90°C, and 75°C.

[0379] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a sublimation temperature of one of no more than about: 140°C, 120°C, 110°C, 100°C, 90°C, and 75°C, may tend to encounter constraints on at least one of: a deposition rate and an average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.

[0380] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high sublimation temperature may have applicability in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0381] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof, may have a sublimation temperature of one of no more than about: 300°C, 350°C, 400°C, and 500°C.

[0382] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a sublimation temperature that is at least about: 350°C, 400°C, and 500°C, may have reduced applicability in some scenarios, when processing such material fordeposition as a thin film, using, without limitation, vacuum thermal evaporation, in certain tool configurations, because of the substantially high sublimation temperature.

[0383] In some non-limiting examples, at least one of the patterning coating 110, and the compound thereof, may have a sublimation temperature of one of between about: 100-320°C, 120-300°C, 140-280°C, and 150-250°C. In some non-limiting examples, such sublimation temperature may allow the patterning material 411 to be substantially readily deposited as a coating using PVD.

[0384] In some non-limiting examples, a material with substantially low intermolecular forces may exhibit a substantially low sublimation temperature.

[0385] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness of a closed coating 140 of the material.

[0386] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a sublimation temperature that is one of no more than about: 140°C, 120°C, 110°C, 100°C and 90°C, may tend to encounter constraints on at least one of: the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.

[0387] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high sublimation temperature may have applicability in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.Examples

[0388] The sublimation temperature of a material, including without limitation, a patterning material 411, may be determined using various methods apparent to those having ordinary skill in the relevant art, including without limitation, by heating the material in an evaporation source under a substantially high vacuum environment, in some non-limiting examples, no more than 10-4Torr, and including without limitation, in a crucible and by determining a temperature that may be attained, to at least one of:• observe commencement of the deposition of the material onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible;• observe a specific deposition rate, in some non-limiting examples, 0.1 A / sec, onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible; and• reach a threshold vapor pressure of the material, in some non-limiting examples, one of about” 10-4and 10-5Torr.

[0389] In some non-limiting examples, the QCM may be mounted about 65 cm away from the crucible for the purpose of determining the sublimation temperature.

[0390] In some non-limiting examples, the sublimation temperatures of select example materials were measured. The results of the measurement are summarized in Table 11 :Table 11Melting Point

[0391] In some non-limiting examples, a material, including without limitation, a patterning material 411, with substantially low inter-molecular forces may tend to exhibit a substantially low melting point.

[0392] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low melting point may have reduced applicability in some scenarios calling for substantial temperature reliability for temperatures of one of no more than about: 60°C, 80°C, and 100°C, in some non-limiting examples, because of changes in physical properties of such material at operating temperatures that approach the melting point.

[0393] In some non-limiting examples, a material with a melting point of about 120°C may have reduced applicability in some scenarios calling for substantially high temperature reliability, including without limitation, of at least about: 100 °C.

[0394] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high melting point may have applicability in some scenarios calling for substantially high temperature reliability.

[0395] In some non-limiting examples, at least one of: the patterning coating 110 and the compound thereof may have a melting temperature, at atmospheric pressure, that is one of at least about: 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C.

[0396] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof may have a melting temperature, at atmospheric pressure, that is one of at least about: 50°C, 70°C, 75°C, 80°C, 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C.

[0397] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof may have a melting temperature, at atmospheric pressure, that is one of at least about: 100°C, 110°C, 120°C, and 130°C.

[0398] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof may have a melting temperature, at atmospheric pressure, that is one of no more than about: 350°C, 280°C, 250°C, 230°C, 220°C, 200°C, 190°C, 180°C, 170°C, 160°C, and 150°C.

[0399] In some non-limiting examples, at least one of: the patterning coating 110, and the compound thereof may have a melting temperature, at atmospheric pressure, that is between one of about: 90-220°C, 100-200°C, 100-180°C and 110-160°C.Examples

[0400] In some non-limiting examples, the melting point of select example materials was measured using differential scanning calorimetry. Specifically, the melting point was determined for each sample during the second heating cycle at a heating rate of 10°C / min and under atmospheric pressure. The results of the measurement are summarized in Table 12:Table 12Cohesion Energy

[0401] According to Young’s equation (Equation 15) the cohesion energy (fracture toughness / cohesion strength) of a material may tend to be proportional to its surface energy (cf Young, Thomas (1805) “An essay on the cohesion of fluids”, Philosophical Transactions of the Royal Society of London, 95: 65-87).

[0402] According to Lindemann’s criterion, the cohesion energy of a material may tend to be proportional to its melting temperature (cf Nanda, K.K., Sahu, S.N, and Behera, S.N (2002), “Liquid-drop model for the size-dependent melting of low-dimensional systems” Phys. Rev. A. 66 (1): 013208).

[0403] In some non-limiting examples, a material, including without limitation, a patterning material 311, having substantially low inter-molecular forces may tend to exhibit a substantially low cohesion energy.

[0404] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low cohesion energy may have reduced applicability in some scenarios that call for substantial fracture toughness, including without limitation, in a device 100 that may tend to undergo at least one of: sheer, and bending, stressduring at least one of: manufacture, and use, as such material may tend to crack (fracture) in such scenarios. In some non-limiting examples, a material, including without limitation, a patterning material 311, having a cohesion energy of no more than about 30 dynes / cm may have reduced applicability in some scenarios in a device 100 manufactured on a flexible substrate 10.

[0405] In some non-limiting examples, a material, including without limitation, a patterning material 311, that has a substantially high cohesion energy, may have applicability in some scenarios calling for substantially high reliability under at least one of: sheer, and bending, stress, including without limitation, a device 100 manufactured on a flexible substrate 10.

[0406] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a surface energy that is substantially low but is not unduly low may have applicability in some scenarios that call for substantial reliability under at least one of: sheer, and bending, stress, including without limitation, a device 100 manufactured on a flexible substrate 10.Examples

[0407] In some non-limiting examples, a series of samples was fabricated to determine a point of failure upon peeling or delamination thereof. Specifically, each sample was fabricated by depositing, on a glass substrate 10, an approximately 50 nm thick layer of each example material acting as the patterning coating 110, followed by an approximately 50 nm thick layer of an organic material commonly used as a capping layer (CPL). An adhesive tape was then applied to the exposed layer surface 11 of the CPL for each sample. The adhesive tape was peeled off to cause delamination (cohesive failure) of each sample, and the peeled adhesive tape, as well as the delaminated samples, were analyzed to determine at which layer (including without limitation, at an interface with an adjacent layer thereof) the failure occurred. Samples for which the failure occurred within the patterning coating 110 (including without limitation, at an interface between the patterning coating 110 and an adjacent layer), were identified as having failed a delamination test, and samples for which the failure occurred within the CPL (i.e. a cohesion failure within the CPL) were identified as having passed the delamination test. Table 13 summarizes the results of such analysis.Table 13

[0408] Based on the foregoing analysis of the delamination tests, it was found that the sample fabricated with a patterning coating 110 comprising one of: EM-8, EM-42, EM-86, EM- 89, EM- 100, EM- 108, EM- 109, EM-112, EM-113, EM- 120, EM- 121, EC-1, EC-2, and EC-4 as a patterning material 411), showed failure occurring within the CPL, in that the CPL separated to form new surfaces, while the samples fabricated with a patterning coating 110 comprising one of: EM-4, EM-11, EM- 13, and EM- 14 as a patterning material 411, showed failure occurring within the patterning coating 110, in that the patterning coating 110 separated to form new surfaces.

[0409] Without wishing to be bound by any particular theory, it may be postulated that this was due to the cohesion energy of the CPL being no more than both the cohesion energy of the patterning coating 110 and the adhesive energy at an interface between the patterning coating 110 and the CPL, when the patterning material 411 comprised one of: EM-8, EM-42, EM-86, EM-89, EM- 100, EM- 108, EM- 109, EM-112, EM-113, EM- 120, EM- 121, EC-1, EC-2, and EC- 4 one of: EM-8, EM-42, EM-86, EM-89, EM- 100, EM- 108, EM- 109, EM-112, EM-113, EM- 120, EM-121, EC-1, EC -2, and EC-4. Conversely, each patterning coating 110 formed by a patterning material 411 comprising one of: EM-4, EM-11, EM-13, and EM-14, exhibited a cohesion energy that was no more than both the cohesion energy of the CPL and the adhesive energy at an interface between the patterning coating 110 and the CPL, for such sample, such that delamination by cohesive failure occurred in both samples within the patterning coating 110.Optical / Band Gap

[0410] In the present disclosure, a semiconductor material may be described as a material that generally exhibits a band gap. In some non-limiting examples, the band gap may be formed between a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Semiconductor materials may thus tend to exhibit electrical conductivity that is substantially no more than that of a conductive material (including without limitation, at least one of: a metal, and an alloy), but that is substantially at least that an insulating material (including without limitation, glass). In some non-limiting examples, the semiconductor material may comprise an organic semiconductor material. In some non-limiting examples, the semiconductor material may comprise an inorganic semiconductor material.

[0411] In some non-limiting examples, an optical gap of a material, including without limitation, a patterning material 311, may tend to correspond to the H0M0-LUM0 gap of the material.

[0412] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially large / wide optical (H0M0-LUM0 gap) may tend to exhibit substantially weak, including without limitation, substantially no, photoluminescence in at least one of: the deep B(lue) region of the visible spectrum, the near UV spectrum, the visible spectrum, and the NIR spectrum.

[0413] In some non-limiting examples, a material having a substantially small HOMO- LUMO gap may have applicability in some scenarios to detect a film of the material using optical techniques.

[0414] In some non-limiting examples, an optical gap of the patterning material 311 may be wider than a photon energy of the light emitted by the source, such that the patterning material 311 does not undergo photoexcitation when subjected to such light.Refractive Index and Extinction Coefficient

[0415] In some non-limiting examples, at least one of the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a low refractive index.

[0416] In some non-limiting examples, at least one of the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a refractive index of one of at least about: 1.45, 1.4, and 1.3.

[0417] In some non-limiting examples, at least one of the patterning coating 110, and the patterning material 411, in some non-limiting examples, when deposited as at least one of a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a refractive index for light at a wavelength of 550 nm that may be one of no more than about: 1.7, 1.65, 1.6, and 1.55.

[0418] In some non-limiting examples, the refractive index, of the patterning coating 110 may be no more than about 1.7. In some non-limiting examples, the refractive index of the patterning coating 110 may be one of no more than about: 1.65, and 1.55. In some non-limiting examples, the refractive index of the patterning coating 110 may be one of between about: 1.2- 1.6, 1.3-1.6, and 1.4-1.6. As further described in various non-limiting examples above, the patterning coating 110 exhibiting a substantially low refractive index may have application in some scenarios, to enhance at least one of: the optical properties, and performance, of the device 100, including without limitation, by enhancing outcoupling of light emitted by the opto- electronic device 200.

[0419] In some non-limiting examples, the patterning coating 110 may be at least one of: substantially transparent, and light-transmissive.

[0420] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an extinction coefficient that may be no more than about 0.01 for light at a wavelength that is one of at least about: 600, 500, 460, 420, and 410, nm.

[0421] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have an extinction coefficient that may be one of at least about: 0.05, 0.1, 0.2, and 0.5 for light at a wavelength that is one of no more than about: 400, 390, 380, and 370, nm.

[0422] In this way, at least one of the: patterning coating 110, and patterning material 311, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may absorb light in the UVA spectrum incident upon the device 100, thereby reducing a likelihood that light in the UVA spectrum may impart constraints in terms of at least one of device: performance, stability, reliability, and lifetime.

[0423] In some non-limiting examples, the patterning coating 110 may exhibit an extinction coefficient of one of no more than about: 0.1, 0.08, 0.05, 0.03, and 0.01, in the visible spectrum.Photoluminescence, Absorption and Other Optical Effects

[0424] In some non-limiting examples, photoluminescence of at least one of: a coating, and a material may be observed through a photoexcitation process. In a photoexcitation process, at least one of: the coating, and the material, may be subjected to light emitted by a source, including without limitation, a UV lamp.

[0425] When the emitted light is absorbed by at least one of: the coating, and the material, the electrons thereof may be temporarily excited. Following excitation, at least one relaxation process may occur, including without limitation, at least one of: fluorescence and phosphorescence, in which light may be emitted from at least one of the: coating, and material.

[0426] The light emitted from at least one of: the coating, and the material, during such process may be detected, for example, by a photodetector, to characterize the photoluminescence properties of at least one of the: coating, and material.

[0427] As used herein, a wavelength of photoluminescence, in relation to at least one of: the coating, and the material, may generally refer to a wavelength of light emitted by such at least one of: the coating, and the material, as a result of relaxation of electrons from an excited state. As would be appreciated by a person having ordinary skill in the relevant art, a wavelength of light emitted by at least one of: the coating, and the material, as a result of the photoexcitation process may, in some non-limiting examples, be longer than a wavelength of radiation used to initiate photoexcitation. Photoluminescence may be detected using various techniques known in the art, including, without limitation, fluorescence microscopy.

[0428] In some non-limiting examples, the optical gap of the various coatings / materials may correspond to an energy gap of the coating / material from which light is one of: absorbed, and emitted, during the photoexcitation process.

[0429] In some non-limiting examples, photoluminescence may be detected by subjecting the coating / material to light having a wavelength corresponding to the UV spectrum, such as in some non-limiting examples, one of: UVA, and UVB. In some non-limiting examples, light for causing photoexcitation may have a wavelength of about 365 nm.

[0430] In some non-limiting examples, the patterning material 311 may not substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0431] In some non-limiting examples, the patterning material 311 may not exhibit photoluminescence upon being subjected to light having a wavelength of one of at least about: 300, 320, 350, and 365, nm.

[0432] As used herein, at least one of the: coating, and material, that is photoluminescent, may be one that exhibits photoluminescence at a wavelength when irradiated with an excitation radiation at a certain wavelength. In some non-limiting examples, at least one of: the coating, and the material, that is photoluminescent, may exhibit photoluminescence at a wavelength that exceeds about 365 nm, which is a wavelength of the radiation source frequently used in fluorescence microscopy, upon being irradiated with an excitation radiation having a wavelength of 365 nm.

[0433] At least one of the: coating, and material, that is photoluminescent, may be detected on a substrate 10 using standard optical techniques including without limitation, fluorescence microscopy, which may establish the presence of such at least one of the: coating, and material.

[0434] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, may exhibit photoluminescence, including without limitation, by comprising a material that exhibits photoluminescence.

[0435] In some non-limiting examples, the presence of such patterning coating 110 may be detected (observed) using routine characterization techniques such as fluorescence microscopy upon deposition of the patterning coating 110.

[0436] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, may exhibit photoluminescence at a wavelength corresponding to at least one of: the UV spectrum, and visible spectrum, including without limitation, by comprising a material that exhibits photoluminescence. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the UV spectrum, including, without limitation, one of: the UVA spectrum, and UVB spectrum. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the visible spectrum. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to one of: deep B(lue) and near UV.

[0437] In some non-limiting examples, at least one of the materials of the patterning coating 110 that may exhibit photoluminescence may comprise at least one of: a conjugated bond, an aryl moiety, a donor-acceptor group, and a heavy metal complex.

[0438] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, comprised of a material, including without limitation, a patterning material 311, having substantially weak to no photoluminescence (absorption) in a wavelength range of one of at least about: 365, and 460, nm, may tend to not act as one of: a photoluminescent, and an absorbing, coating and may have applicability in some scenarios calling for substantially high transparency in at least one of the: visible, and NIR, spectrum.

[0439] In some non-limiting examples, such material may tend to exhibit substantially low photoluminescence upon being subjected to light having a wavelength of about 365 nm, which is a wavelength of the radiation source frequently used in fluorescence microscopy. Thepresence of such materials, including without limitation, a patterning material 311, especially when deposited, in some non-limiting examples, as a thin film, may have reduced applicability in some scenarios calling for typical optical detection techniques, including without limitation, fluorescence microscopy. This may impose constraints in some scenarios in which such material may be selectively deposited, for example through an FMM, over part(s) of a substrate 10, as there may be some scenarios for determining, following the deposition of the material, the part(s) in which such materials are present.

[0440] In some non-limiting examples, a material with substantially low to no absorption at a wavelength that is one of at least about: 365, and 460, nm, may have applicability in some scenarios calling for substantially high transparency in at least one of the: visible, and NIR, spectrum.

[0441] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may not substantially attenuate light passing therethrough, in at least the visible spectrum.

[0442] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may not substantially attenuate light passing therethrough, in at least one of the: IR, and NIR, spectrum.

[0443] In this way, at least one of the: patterning coating 110, and patterning material 311, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may absorb light in the UVA spectrum incident upon the device 100, thereby reducing a likelihood that light in the UVA spectrum may impart constraints in terms of at least one of device: performance, stability, reliability, and lifetime.

[0444] In some non-limiting examples, the patterning coating 110 may act as an optical coating.

[0445] In some non-limiting examples, the patterning coating 110 may modify at least one of: at least one property, and at least one characteristic, of light (including without limitation, in the form of photons) emitted by the device 100. In some non-limiting examples, the patterningcoating 110 may exhibit a degree of haze, causing emitted light to be scattered. In some non- limiting examples, the patterning coating 110 may comprise a crystalline material for causing light transmitted therethrough to be scattered. Such scattering of light may facilitate enhancement of the outcoupling of light from the device 100 in some non-limiting examples. In some non-limiting examples, the patterning coating 110 may initially be deposited as a substantially non-crystalline, including without limitation, substantially amorphous, coating, whereupon, after deposition thereof, the patterning coating 110 may become crystallized and thereafter serve as an optical coupling.

[0446] In some non-limiting examples, the patterning material 311 may exhibit insignificant, including without limitation, no detectable, absorption when subjected to light having a wavelength of one of at least about: 300, 320, 350, and 365, nm.

[0447] In some non-limiting examples, the patterning coating 110 may not exhibit any substantial light absorption at any wavelength corresponding to the visible spectrum.Average Laver Thickness

[0448] In some non-limiting examples, an average layer thickness of the patterning coating 110 may be one of no more than about: 10, 8, 7, 6, and 5, nm.Weight

[0449] Without wishing to be bound by any particular theory, it may be postulated that, for compounds that are adapted to form surfaces with substantially low surface energy, there may be scenarios calling for, in at least some applications, the molecular weight of such compounds to be one of between about: 800-3,000, 900-2,000, 900-1,800, and 900-1,600, g / mol.

[0450] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 311 may be no more than about 6,000 g / mol. In some non-limiting examples, the molecular weight of the compound may be one of no more than about: 6,000, 5,500, 5,000, 4,500, 4,300, and 4,000, g / moll.

[0451] In some non-limiting examples, the molecular weight of the compound may be one of at least about: 500, 550, 580, 650, 750, 1,000, 1,200, 1,300, 1,500, 1,700, 2,000, 2,200, and 2,500, g / mol.

[0452] In some non-limiting examples, the molecular weight of the compound may be one of between about: 800-4,000, 900-2,000, 900-1,800, and 900-1,600, g / mol.

[0453] In some non-limiting examples, a percentage of the molar weight of such compound that may be attributable to the presence of F atoms, may be one of between about: 40- 90%, 45-85%, 50-80%, 55-75%, and 60-75%. In some non-limiting examples, F atoms may constitute a majority of the molar weight of such compound.Inter-Relationships Between Patterning Coating Attributes

[0454] Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting low initial sticking probability with respect to the deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, may exhibit high transmittance. Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting high sticking probability with respect to the deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, may exhibit low transmittance.

[0455] In some non-limiting examples, a material, including without limitation, a patterning material 311, may tend to have a substantially high initial sticking probability against deposition of a deposited material, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, if the material has a substantially high surface energy.

[0456] In some non-limiting examples, a patterning coating 110 having a substantially low surface energy and a substantially high melting point may have applicability in some scenarios calling for high temperature reliability. In some non-limiting examples, there may be challenges in achieving such a combination from a single material given that in some non- limiting examples, a single material having a low surface energy may tend to exhibit a low melting point.

[0457] In some non-limiting examples, a patterning material 311 that has a substantially low surface tension that is not unduly low, may have applicability in some scenarios calling for a substantially high melting point, including without limitation, between about 15-23 dynes / cm.

[0458] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a surface tension that is substantially low, but not unduly low,may have applicability in some scenarios that call for a substantially high sublimation temperature, including without limitation, between about 15-23 dynes / cm.

[0459] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, comprised of a material, including without limitation, a patterning material 311, having a substantially low surface energy and a substantially high sublimation temperature may have application in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0460] Without wishing to be bound by any particular theory, it may be postulated that materials that form an exposed layer surface 11 having a surface energy, in some non-limiting examples, of one of no more than about: 13, 14, and 15, dynes / cm, may have reduced applicability as a patterning material 311 in some scenarios, as such materials may exhibit at least one of: substantially low adhesion to layer(s) surrounding such materials, a substantially low melting point, and a substantially low sublimation temperature.

[0461] Without wishing to be bound by any particular theory, it may be postulated that materials that form an exposed layer surface 11 having a surface energy, in some non-limiting examples, of one of no more than about: 13, 15, and 17, dynes / cm, may have reduced applicability as a patterning material 311 in some scenarios, as such materials may exhibit at least one of: substantially poor cohesion strength, a substantially low melting point, and a substantially low sublimation temperature.

[0462] Without wishing to be bound by any particular theory, it may be postulated that such compounds, including without limitation, of at least one patterning material 311, may exhibit at least one property that may have applicability in some scenarios for forming at least one of a: coating, and layer, having at least one of: a substantially high melting point, in some non-limiting examples, of at least 100°C, a substantially low surface energy, and a substantially amorphous structure, when deposited, in some non-limiting examples, using vacuum-based thermal evaporation processes.

[0463] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, having a substantially low surface energy, a substantially high cohesion energy, and a substantially high melting point may have applicability in some scenarios that call for substantially high reliability under various conditions. In some non-limiting examples, there may be challenges in achieving such a combination from a single material, given that, in somenon-limiting examples, a unitary material having a substantially low surface energy may tend to exhibit a substantially low cohesion energy and a substantially low melting point.

[0464] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low surface energy and a substantially high cohesion energy may have applicability in some scenarios that call for substantially high reliability under at least one of: sheer, and bending, stress. In some non-limiting examples, there may be challenges in achieving such a combination from a single material, given that, in some non-limiting examples, a thin film formed substantially of a single material having a substantially low surface energy may tend to exhibit a substantially low cohesion energy.

[0465] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low surface energy may tend to exhibit at least one of a substantially: large, and wide, optical gap.

[0466] In general, a material with a low surface energy may exhibit at least one of a: large, and wide, optical gap which, in some non-limiting examples, may correspond to the H0M0-LUM0 gap of the material.

[0467] It has also now been found that a patterning coating 110 formed by a compound exhibiting a substantially low surface energy may also exhibit a substantially low refractive index.

[0468] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 311, may exhibit a surface energy of no more than about 25 dynes / cm and a refractive index of no more than about 1.45. In some non-limiting examples, at least one of: at least one of: the patterning coating 110, and the patterning material 711, may comprise a material exhibiting a surface energy of no more than about 20 dynes / cm and a refractive index of no more than about 1.4.

[0469] In some non-limiting examples, a material, including without limitation, a patterning material 311, having a substantially low surface energy may have applicability in some scenarios calling for substantially weak to no, at least one of: photoluminescence, and absorption, in a wavelength range that is one of at least about: 365 and 460, nm.

[0470] In some non-limiting examples, a material, including without limitation, a patterning material 311, having at least one of a substantially: large, and wide, optical (andH0M0-LUM0) gap may tend to exhibit a substantially weak to no photoluminescence in at least one of the: deep B(lue) region of the visible, near UV, visible, and NIR, spectrum.

[0471] Without wishing to be bound by any particular theory, it has been observed that compounds with substantially low surface energies that also have a molecular weight of no more than about 1,000 g / mol, may exhibit at least one of a: substantially low sublimation temperature of, without limitation, no more than about 100°C, and substantially low melting point of, without limitation, one of no more than about: 100°C, and 80°C, such that compounds may have reduced applicability in certain scenarios.

[0472] Without wishing to be bound by any particular theory, it may be postulated that, for compounds that are adapted to form surfaces with substantially low surface energy, there may be scenarios calling for, in some non-limiting examples, the molecular weight of such compounds to be one of between about: 500-6,000, 550-5,500, 580-4500, 580-4,000, 650-3,800, 750-3,500, and 1,000-3,000, g / mol.

[0473] At least some materials with at least one of: one of a: large, and wide, optical, and H0M0-LUM0, gap, may exhibit substantially weak to no photoluminescence in at least one of: the visible spectrum, the deep B(lue) region thereof, and the near UV spectrum. In some non- limiting examples, a material with a substantially small H0M0-LUM0 gap may have applicability in applications to detect a film of the material using optical techniques. In some non-limiting examples, a material with higher surface energy may have applicability for applications to detect of a film of the material using optical techniques.

[0474] In some non-limiting examples, a material having a substantially large H0M0- LUMO gap may have applicability in some scenarios calling for weak to no at least one of: photoluminescence, and absorption, in a wavelength range of one of at least about: 365, and 460, nm.Doping

[0475] In some non-limiting examples, the patterning coating 110 may exhibit, including without limitation, because of at least one of the: patterning material 311 used, and deposition environment, at least one nucleation site for the deposited material 431.

[0476] In some non-limiting examples, the patterning coating 110 may be doped, including without limitation, by at least one of: covering, and supplementing, with another material that may act as at least one of: a seed, and heterogeneity, to act as such a nucleation sitefor the deposited material 431. In some non-limiting examples, such other material may comprise an NPC 620 material. In some non-limiting examples, such other material may comprise an organic material, in some non-limiting examples, at least one of a: polycyclic aromatic compound, and material comprising a non-metallic element, including without limitation, at least one of: O, S, N, and C, whose presence might otherwise be a contaminant in at least one of the: source material, equipment used for deposition, and vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a fraction of a monolayer, to avoid forming a closed coating 140 thereof.Rather, the monomers of such other material may tend to be spaced apart in the lateral aspect so as form discrete nucleation sites for the deposited material.Plurality of Materials Forming a Patterning Coating

[0477] In some non-limiting examples, forming a patterning coating 110 of a single patterning material 411 against the deposition of a deposited material 531, including without limitation, at least one of: a given metal, and a given alloy, including without limitation, at least one of: Yb, Au Ag, Mg, Li, and a Ag-containing materials, including without limitation, MgAg, that satisfies constraints of at least one material property selected from at least one of: initial sticking probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesion energy, optical gap, photoluminescence, refractive index, extinction coefficient, absorption, other optical effect, average layer thickness, molecular weight, and composition, for a given scenario, may impose challenges, given the substantially complex inter-relationships between the various material properties.

[0478] In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials. In some non-limiting examples, the patterning coating 110 may comprise a first material and a second material. In some non-limiting examples, the patterning coating 110 may comprise additional materials, including without limitation, at least one of: a third material, and a fourth material.

[0479] In some non-limiting examples, at least one of the plurality of materials of the patterning coating 110 may serve as an NIC when deposited as a thin film.

[0480] In some non-limiting examples, at least one of the plurality of patterning materials 411 may serve as an NIC when deposited as a thin film. In some non-limiting examples, at leastone of the patterning materials 411 may not serve as an NIC. In some non-limiting examples, such at least one of the patterning materials 411 that do not serve as an NIC may form an NPC 720 when deposited as a thin film. In some non-limiting examples, the presence of the first material in the patterning coating 110 may result in an increased initial sticking probability thereof compared to cases in which the patterning coating 110 is formed of the second material and is substantially devoid of the first material.

[0481] In some non-limiting examples, at least one of: the first material, and the second material, may comprise a molecule that comprises at least one of: a cage structure, a cyclic structure, and an organic-inorganic hybrid structure.

[0482] In some non-limiting examples, the host may comprise a fully condensed oligomer. In some non-limiting examples, the molecular structure of the host may be substantially devoid of any partially condensed, including without limitation, uncondensed, moieties.

[0483] In some non-limiting examples, the first material may form an NPC 720 when deposited as a thin film, and the second material may form an NIC when deposited as a thin film.

[0484] In some non-limiting examples, employing a plurality of patterning materials 411 that each satisfy a different combination of constraints of the at least one material property, may have applicability in some scenarios to achieve a combination of characteristics of the patterning coating 110, including without limitation, at least one of:• high patterning contrast,• low propensity to crystallize in a thin film form,• low risk of cohesion failure and / or delamination in a thin film form,• the patterning coating 110 exhibiting a photoluminescent response, and• formation of at least one particle structure 150 on an exposed layer surface 11 of the patterning coating 110.

[0485] In some non-limiting examples, at least one of the materials of the patterning coating 110 may be adapted to form a surface having a low surface energy when deposited as a thin film. In some non-limiting examples, the first material, when deposited as a thin film, may be adapted to form a surface having a lower surface energy than a surface provided by a thin film comprising the second material.

[0486] In some non-limiting examples, the patterning coating 110 may exhibit photoluminescence, including without limitation, by comprising a material which exhibits photoluminescence.

[0487] In some non-limiting examples, the first material may exhibit photoluminescence at a wavelength corresponding to the visible spectrum, and the second material may not exhibit substantial photoluminescence at any wavelength corresponding to the visible spectrum.

[0488] In some non-limiting examples, the second material may not substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum. In some non- limiting examples, the second material may not exhibit photoluminescence upon being subjected to light having a wavelength of one of at least about: 300 nm, 320 nm, 350 nm, and 365 nm. In some non-limiting examples, the second material may exhibit insignificant to no detectable absorption when subjected to such light.

[0489] In some non-limiting examples, the second optical gap of the second material may be wider than the photon energy of the light emitted by the source, such that the second material does not undergo photoexcitation when subjected to such light. However, in some non-limiting examples, the patterning coating 110 comprising such second material may nevertheless exhibit photoluminescence upon being subjected to light due to the first material exhibiting photoluminescence. In some non-limiting examples, the presence of the patterning coating 110 may be detected using routine characterization techniques such as fluorescence microscopy upon deposition of the patterning coating 110.

[0490] In some non-limiting examples, the first material may have a first optical gap, and the second material may have a second optical gap. In some non-limiting examples, the second optical gap may exceed the first optical gap. In some non-limiting examples, a difference between the first optical gap and the second optical gap may exceed one of about: 0.3 eV, 0.5 eV, 0.7 eV, 1 eV, 1.3 eV, 1.5 eV, 1.7 eV, 2 eV, 2.5 eV, and 3 eV.

[0491] In some non-limiting examples, the first optical gap may be one of no more than about: 4.1 eV, 3.5 eV, and 3.4 eV. In some non-limiting examples, the second optical gap may exceed one of about: 3.4 eV, 3.5 eV, 4.1 eV, 5 eV, and 6.2 eV.

[0492] In some non-limiting examples, at least one of: the first optical gap, and the second optical gap, may correspond to the H0M0-LUM0 gap.

[0493] In some non-limiting examples, an optical gap of at least one of: the various coatings, and materials, including without limitation, at least one of: the first optical gap, and the second optical gap, may correspond to an energy gap of at least one of: the coating, and the material, from which light is at least one of: absorbed, and emitted, during the photoexcitation process.

[0494] In some non-limiting examples, a concentration, including without limitation by weight, of the first material in the patterning coating 110 may be no more than that of the second material in the patterning coating 110. In some non-limiting examples, the patterning coating 110 may comprise one of at least about: 0.1, 0.2, 0.5, 0.8, 1, 3, 5, 8, 10, 15, and 20, wt.%, of the first material. In some non-limiting examples, the patterning coating 110 may comprise one of no more than about: 50, 40, 30, 25, 20, 15, 10, 8, 5, 3, and 1, wt.%, of the first material. In some non-limiting examples, a remainder of the patterning coating 110 may be composed substantially of the second material.

[0495] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise a plurality of: at least one of: a first ligand moiety, and a second ligand moiety.

[0496] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may comprise a plurality of at least one of: a first ligand moiety, and a second ligand moiety. In some non-limiting examples, the plurality of at least one of: the first ligand moiety, and the second ligand moiety, may attach to a core moiety. In some non-limiting examples, the core moiety may comprise N. In some non-limiting examples, the core moiety may comprise a phosphazene group. In some non-limiting examples, the core moiety may be a cyclophosphazene.

[0497] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of: the first material, and the second material, may be represented by Chemical Formula (A-1):(A-1)Where: each L independently represent a ligand moiety; and n is an integer between 2-4.

[0498] In some non-limiting examples, at least one ligand moiety, L, may comprise at least one of: H, F, Cl, a hydroxyl moiety, a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted cycloalkyl moiety, an unsubstituted cycloalkyl moiety, a substituted alkoxy moiety, an unsubstituted alkoxy moiety, an unsubstituted aryloxy moiety, a substituted aryloxy moiety, an unsubstituted aryl moiety, a substituted aryl moiety, an unsubstituted fluoroaryl moiety, a substituted fluoroaryl moiety, an unsubstituted heteroaryloxy moiety, a substituted heteroaryloxy moiety, an unsubstituted cycloheteroalkyl moiety, a substituted cycloheteroalkyl moiety, an unsubstituted alkylsilyl moiety, a substituted alkylsilyl moiety, an unsubstituted alkylsiloxy moiety, a substituted alkylsiloxy moiety, an unsubstituted amino moiety, a substituted amino moiety, an amine moiety, an unsubstituted alkylamine moiety, a substituted alkylamine moiety, an unsubstituted arylamine moiety, a substituted arylamine moiety, a cyano moiety, an unsubstituted phosphazo moiety, a substituted phosphazo moiety, an unsubstituted siloxane moiety, a substituted siloxane moiety, a silane moiety, and an organosilicon moiety.

[0499] In some non-limiting examples, the at least one of the materials of the patterning coating 110, including without limitation, the first material, may comprise, as a ratio of a number of the ligand moi eties in such material, about 1 : 1 of the first ligand moiety to the second ligand moiety.

[0500] In some non-limiting examples, the at least one of the materials of the patterning coating 110, including without limitation, the second material, may comprise, as a ratio of the number of the ligand moieties composed in such material, one of at least about: 1 :2, 2: 1, 1 :5, and 5: 1, of the first ligand moiety to the second ligand moiety.

[0501] In some non-limiting examples, at least one of the materials of the patterning coating, including without limitation, the first material, and the second material, may comprise: a first ligand moiety comprising a fluoroalkyl moiety, and a second ligand moiety comprising atleast one of: a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating, including without limitation, the first material, and the second material, may comprise: a first ligand moiety represented by one of: Chemical Formulae (F-1) to (F-9), and a second moiety comprising at least one of: H, F, Cl, a hydroxyl moiety, a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted cycloalkyl moiety, an unsubstituted cycloalkyl moiety, a substituted alkoxy moiety, an unsubstituted alkoxy moiety, an unsubstituted aryloxy moiety, a substituted aryloxy moiety, an unsubstituted aryl moiety, a substituted aryl moiety, an unsubstituted fluoroaryl moiety, a substituted fluoroaryl moiety, an unsubstituted heteroaryloxy moiety, a substituted heteroaryloxy moiety, an unsubstituted cycloheteroalkyl moiety, a substituted cycloheteroalkyl moiety, an unsubstituted alkylsilyl moiety, a substituted alkylsilyl moiety, an unsubstituted alkylsiloxy moiety, a substituted alkylsiloxy moiety, an unsubstituted amino moiety, a substituted amino moiety, an amine moiety, an unsubstituted alkylamine moiety, a substituted alkylamine moiety, an unsubstituted arylamine moiety, a substituted arylamine moiety, a cyano moiety, an unsubstituted phosphazo moiety, a substituted phosphazo moiety, an unsubstituted siloxane moiety, a substituted siloxane moiety, a silane moiety, and an organosilicon moiety.Mixtures with Other Materials

[0502] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material, and the second material, may comprise at least one of: F, and Si. In some non-limiting examples, at least one of the: first, and second, material, may comprise at least one of: F, and Si. In some non-limiting examples, the first material may comprise at least one of: F, and Si, and the second material may comprise at least one of: F, and Si. In some non-limiting examples, the first material and the second material may both comprise F. In some non-limiting examples, the first material and the second material may both comprise Si. In some non-limiting examples, each of the first material and the second material may comprise at least one of: F, and Si.

[0503] In some non-limiting examples, at least one material of: the first material, and the second material may comprise both F and Si. In some non-limiting examples, one of: the first material, and the second material, may not comprise at least one of: F, and Si. In some non- limiting examples, the second material may comprise at least one of: F, and Si, and the first material may not comprise at least one of: F, and Si.

[0504] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise a compound that comprises F. In some non-limiting examples, at least one of the: first, and second, material, may comprise a compound that comprises F and C. In some non-limiting examples, at least one of the: first, and second, material, may comprise a compound that comprises F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0505] In some non-limiting examples, an atomic ratio of F to C may be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp3hybridized C atoms present in the compound structure. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise a compound that comprises, as part of its molecular sub- structure, a moiety comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 1, 1.5, and 2.

[0506] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, may be at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise an sp2C atom. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise an sp3C atom. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and an sp3C atom, and at least one of the other materials of the patterning coating 110 may comprise an sp2C atom. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and an sp3C atom, wherein all F atoms bonded to a C atom may be bonded to an sp3C atom, and at least one of the other materials of the patterningcoating 110 may comprise an sp2C atom. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and an sp3C atom wherein all F atoms bonded to a C atom may be bonded to an sp3C atom, and at least one of the other materials of the patterning coating 110 may comprise an sp2C atom and may not comprise F. In some non-limiting examples, in any of the foregoing non-limiting examples, “at least one of the materials of the patterning coating 110” may correspond to the second material, and the “at least one of the other materials of the patterning coating 110” may correspond to the first material.

[0507] Those having ordinary skill in the relevant art will appreciate that the presence of materials in a coating which comprises at least one of: F, an sp2C atom, an sp3C atom, an aromatic hydrocarbon moiety, other functional groups, and other moieties, may be detected using various methods known in the art, including in some non-limiting examples, X-ray Photoelectron Spectroscopy (XPS).

[0508] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation may be at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the materials of the patterning coating 110 may not comprise an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and may not comprise an aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and may not comprise an aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety and may not comprise F. In some non-limiting examples, the aromatic hydrocarbon moiety may comprise at least one of: a substituted polycyclic aromatic hydrocarbon moiety, an unsubstituted polycyclic aromatic hydrocarbon moiety, a substituted phenyl moiety, and an unsubstituted phenyl moiety.

[0509] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the materials of the patterning coating 110 may be devoid of a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and may be devoid of a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and may be devoid of a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety and may be devoid of F.

[0510] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, the presence of a high surface tension moiety in a compound, including without limitation, a moiety comprising at least one sp2C atom, including without limitation, a polycyclic aromatic hydrocarbon moiety, may decrease an ability of a patterning coating 110 comprising such a compound to function as an NIC against deposition of a deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg. In some non-limiting examples, the patterning coating 110 comprising such a compound may have a substantially high initial sticking probability, due to the presence of the high surface tension moiety.

[0511] In some non-limiting examples, it may be postulated that the presence of a high surface tension moiety in a compound, including without limitation, a moiety comprising at least one sp2C atom, including without limitation, a polycyclic aromatic hydrocarbon moiety, may increase the reliability of a patterning coating 110 comprising such compound by, including without limitation, increasing at least one of the: cohesion energy, and stability, of the patterning coating 110.

[0512] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, the presence of a low surface tension moiety in a compound, including without limitation, a moiety comprising at least one F atom, including without limitation, a fluoroalkyl moiety, may increase an ability of a patterning coating 110 comprising such a compound to function as an NIC against deposition of a deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg. In some non- limiting examples, the patterning coating 110 comprising such a compound may have a substantially low initial sticking probability, due to the presence of the low surface tension moiety.

[0513] In some non-limiting examples, it may be postulated that the presence of a low surface tension moiety in a compound, including without limitation, a moiety comprising at least one F atom, including without limitation, a fluoroalkyl moiety, may decrease the reliability of a patterning coating 110 comprising such compound by, including without limitation, decreasing the cohesion energy of the patterning coating 110.

[0514] In some non-limiting examples, a mixed ligand compound comprising a: high, and low, surface tension moiety, may have applicability in some scenarios. In some non-limiting examples, such mixed ligand compound may have applicability in providing a substantially homogeneous patterning coating 110. Without wishing to be bound by any particular theory, it may be postulated that a patterning coating 110 comprising a compound having a: high, and low, surface tension moiety, including without limitation, the mixed ligand compound, may exhibit an increased: reliability, and ability to inhibit the deposition of a deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg.

[0515] In some non-limiting examples, a composition comprising a plurality of compounds, including without limitation, at least one compound comprising a high surface tension moiety, and at least one compound comprising a low surface tension moiety, may have applicability in some scenarios. Without wishing to be bound by any particular theory, it may be postulated that a patterning coating 110 comprising such a composition may exhibit an increased: reliability, and ability to inhibit the deposition of a deposited material 431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and a Ag-containing material, including without limitation, MgAg.

[0516] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise an organic-inorganic hybrid material.

[0517] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise an oligomer.

[0518] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may comprise a compound having a molecular structure comprising a backbone and at least one functional group bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety, and the at least one functional group may be an organic moiety.

[0519] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one of a: linear, branched, and cyclic, siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise a fluoro-siloxane.

[0520] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the materials of the patterning coating 110 may not comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of thepatterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety and may not comprise at least one of a: fluorocarbon, and siloxane, moiety.

[0521] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may have a molecular structure comprising a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a polyoctahedral silsesquioxane (POSS). In some non-limiting examples, the backbone may comprise a silsesquioxane group. In some non-limiting examples, the backbone may comprise a silsesquioxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0522] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first material and the second material, may have a molecular structure comprising at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group. In some non-limiting examples, the aryl group may be at least one of: phenyl, and naphthyl. In some non-limiting examples, at least one C atom of an aryl group may be substituted by a heteroatom, including without limitation may be at least one of: O, N, and S, to derive a heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group. In some non-limiting examples, the molecular structure of the compound may include: (i) the backbone comprising at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group; and (ii) at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0523] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the materials of the patterning coating 110 may not comprise aphenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety and may not comprise F.

[0524] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the materials of the patterning coating 110 may not comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety and may not comprise either of a: fluorocarbon, and siloxane, moiety.

[0525] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may have a molecular structure comprising at least one of: a substituted hydrocarbon, and an unsubstituted hydrocarbon, group. In some non-limiting examples, the compound may have a molecular structure comprising at least one of a: linear, branched, and cyclic, hydrocarbon group. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted by a heteroatom, including without limitation, at least one of: O, N, and S.

[0526] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer comprising F. In some non-limiting examples, the compound may be an oligomer. In some non- limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer comprising F.

[0527] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be a metal complex. In some non-limiting examples, the metal complex may be an organo-metal complex. In some non-limiting examples, the organo-metal complex may comprise F. In some non-limiting examples, the organo-metal complex may comprise at least one ligand comprising F. In some non-limiting examples, the at least one ligand comprising F may comprise a fluoroalkyl group.

[0528] In general, at least one of the molecular: structures, and compositions, of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be different. In some non-limiting examples, the materials may be selected such that they possess at least one property which is one of substantially: similar to, and different from, one another, including without limitation, at least one of: presence of a element in common; similarity in molecular structure; characteristic surface energy; refractive index; molar weight; and thermal property, including without limitation, at least one of a: melting, sublimation, glass transition, and thermal decomposition, temperature, and at least one of a: molecular structure of monomer, monomer backbone, and functional group.

[0529] A characteristic surface energy, as used herein, in some non-limiting examples, with respect to a material, may generally refer to a surface energy determined from such material. In some non-limiting examples, a characteristic surface energy may be measured from a surface formed by the material deposited in a thin film form. Various methods and theories for determining the surface energy of a solid are known. In some non-limiting examples, a surface energy may be determined based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure a contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, a surface energy of a solid surface may be equal to the surface tension of a liquid with the highest surface tension that completely wets the surface. In some non-limiting examples, a Zisman plot may be used todetermine a highest surface tension value that would result in complete wetting (i.e. contact angle of 0°) of the surface.

[0530] In some non-limiting examples, at least one of the: first, and second, material, of the patterning coating 110 may be an oligomer.

[0531] In some non-limiting examples, the first material may comprise a first oligomer, and the second material may comprise a second oligomer. Each of the first oligomer and the second oligomer may comprise a plurality of monomers.

[0532] In some non-limiting examples, at least a fragment of the molecular structure of the at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be represented by Formula (I):(Mon)n(I) where:Mon represents a monomer, and n is an integer of at least 2.

[0533] In some non-limiting examples, n may be an integer of one of between about: 2- 100, 2-50, 3-20, 3-15, 3-10, and 3-7.

[0534] In some non-limiting examples, the first material may be a linked cyclophosphazene, and the molecular structure of the second material may be independently represented by Formula (I).

[0535] In some non-limiting examples, at least one functional group of the monomer may have a surface tension of one of no more than about: 25, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, and 10, dynes / cm.

[0536] In some non-limiting examples, the monomer may comprise at least one of: a CF2, and a CF2H, moiety. In some non-limiting examples, the monomer may comprise at least one of: a CF2, and a CF3, moiety. In some non-limiting examples, the monomer may comprise a CH2CF3moiety. In some non-limiting examples, the monomer may comprise at least one of: C, and O. In some non-limiting examples, the monomer may comprise a fluorocarbon monomer. In some non-limiting examples, the monomer may comprise at least one of a: vinyl fluoride, vinylidene fluoride, tetrafluoroethylene, chlorotrifluoroethylene, hexafluoropropylene, and fluorinated 1,3- di oxole, moiety.

[0537] In some non-limiting examples, the monomer may comprise a monomer backbone and a functional group. In some non-limiting examples, the functional group may be bonded, one of: directly, and via a linkage group, to the monomer backbone. In some non-limiting examples, the monomer may comprise the linkage group, and the linkage group may be bonded to the monomer backbone and to the functional group. In some non-limiting examples, the monomer may comprise a plurality of functional groups, which may be one of: the same, and different, from one another. In such examples, each functional group may be bonded, one of: directly, and via a linkage group, to the monomer backbone. In some non-limiting examples, where a plurality of functional groups is present, a plurality of linkage groups may also be present.

[0538] In some non-limiting examples, the molecular structure of the second material, may comprise a plurality of different monomers. In some non-limiting examples, such molecular structure may comprise monomer species that have different at least one of molecular: composition, and structure. Non-limiting examples of such molecular structure include those represented by Formulae (II) and (III):(MonA)k(MonB)m(II)(MonA)k(MonB)m(Monc)o(III) where: MonAMonB, and Monceach represent a monomer specie, and k, m, and o each represent an integer of at least 2.

[0539] In some non-limiting examples, k, m, and o each represent an integer of one of between about: 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7. Those having ordinary skill in the relevant art will appreciate that various non-limiting examples and descriptions regarding monomer, Mon, may be applicable with respect to each of MonAMonB, and Monc.

[0540] In some non-limiting examples, the monomer may be represented by *Formula (IV):M-(L-Rx)y (IV) where:M represents the monomer backbone unit,L represents the linkage group,R represents the functional group, x is an integer between 1-4, and y is an integer between 1-3.

[0541] In some non-limiting examples, the linker group may be represented by at least one of: a single bond, O, N, NH, C, CH, CH2, and S.

[0542] Various non-limiting examples of the functional group which have been described herein may apply with respect to R of Formula (IV). In some non-limiting examples, the functional group R may comprise an oligomer unit, and the oligomer unit may further comprise a plurality of functional group monomer units. In some non-limiting examples, a functional group monomer unit may be at least one of: CH2, and CF2. In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of an: alkyl, and fluoroalkyl, oligomer unit. In some non-limiting examples, the oligomer unit may comprise a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be arranged at a terminal end of the oligomer unit and bonded to a functional group monomer unit. In some non-limiting examples, the terminal end at which the functional group terminal unit may be arranged may correspond to a fragment of the functional group that may be distal to the monomer backbone unit. In some non-limiting examples, the functional group terminal unit may comprise at least one of: CF2H, and CF3.

[0543] In some non-limiting examples, the monomer backbone unit M may have a substantially high surface tension. In some non-limiting examples, the monomer backbone unit may have a surface tension that is at least that of at least one of the functional group(s) R bonded thereto. In some non-limiting examples, the monomer backbone unit may have a surface tension that is at least that of a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and afunctional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; a molecular structure of a monomer, a monomer backbone, and a functional group; any functional group R bonded thereto.

[0544] In some non-limiting examples, the monomer backbone unit may have a surface tension of one of at least about: 25, 30, 40, 50, 75, 100; 150, 200, 250, 500, 1,000, 1,500, and 2,000, dynes / cm.

[0545] In some non-limiting examples, the monomer backbone unit may comprise P and N, including without limitation, a phosphazene, in which there is a double bond between P and N and may be represented as at least one of: “NP' and “N=P” . In some non-limiting examples, the monomer backbone unit may comprise Si and O, including without limitation, silsesquioxane, which may be represented as SiO3 / 2.

[0546] In some non-limiting examples, at least a part of the molecular structure of the at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, is represented by Formula (V):(NP-(L-Rx)y)n (V) where:NP represents the phosphazene monomer backbone unit,L represents the linker group,R represents the functional group, x is an integer between 1-4, y is an integer between 1-3, and n is an integer of at least 2.

[0547] In some non-limiting examples, the molecular structure of the second material, may be represented by Formula (V). In some non-limiting examples the second material may bea cyclophosphazene. In some non-limiting examples, the molecular structure of the cyclophosphazene may be represented by Formula (V).

[0548] In some non-limiting examples, L may represent O, x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, at least a fragment of the molecular structure of the the second material may be represented by Formula (VI):(NP(ORƒ)2)n(VI) where: Rƒrepresents the fluoroalkyl group, and n is an integer between 3 -7.

[0549] In some non-limiting examples, the fluoroalkyl group may comprise at least one of a: CF2, CF2H, CH2CF3, and CF3, group. In some non-limiting examples, the fluoroalkyl group may be represented by Formula (VII):(VII) where: p is an integer between 1-5; q is an integer between 6-20; and Z represents one of: H, and F.

[0550] In some non-limiting examples, p may be 1.

[0551] In some non-limiting examples, the fluoroalkyl group Rƒin Formula (VI) may be represented by Formula (VII).

[0552] In some non-limiting examples, at least a fragment of the molecular structure of the second material may be represented by Formula (VIII):( SiO3 / 2-(L-R))n(VIII) where:L represents the linkage group,R represents the functional group, andn is an integer between 6-12.

[0553] In some non-limiting examples, L may represent the presence of at least one of: a single bond, O, substituted alkyl, and unsubstituted alkyl. In some non-limiting examples, n may be one of: 8, 10, and 12. In some non-limiting examples R may comprise a functional group with low surface tension. In some non-limiting examples, R may comprise at least one of: an F- containing, and a Si-containing, group. In some non-limiting examples, R may comprise at least one of a: fluorocarbon, and siloxane-containing, group. In some non-limiting examples, R may comprise at least one of a: CF2, and CF2H, group. In some non-limiting examples, R may comprise at least one of a: CF2, and CF3, group. In some non-limiting examples, R may comprise a CH2CF3group. In some non-limiting examples, the material represented by Formula (VIII) may be a POSS.

[0554] In some non-limiting examples, at least a fragment of the molecular structure of at least one of the materials of the patterning coating 110, including without limitation, the second material, may be represented by Formula (IX):(SiO3 / 2-Rƒ)n(IX) where: n is an integer of 6-12, and Rƒrepresents a fluoroalkyl group.

[0555] In some non-limiting examples n may be one of: 8, 10, and 12. In some non- limiting examples, Rƒmay comprise a functional group with substantially low surface tension. In some non-limiting examples, Rƒmay comprise at least one of a: CF2, and CF2H, moiety. In some non-limiting examples, Rƒmay comprise at least one of a: CF2, and CF3, moiety. In some non- limiting examples, Rƒmay comprise a CH2CF3moiety. In some non-limiting examples, the material represented by Formula (IX) may be a POSS.

[0556] In some non-limiting examples, the fluoroalkyl group, Rƒ, in Formula (IX) may be represented by Formula (VII).

[0557] In some non-limiting examples, at least a fragment of the molecular structure of the second material may be represented by Formula (X):(SiO3 / 2-(CH2)x(CF3))n(X) where:x is an integer between 1-5, and n is an integer between 6-12.

[0558] In some non-limiting examples, n may be one of: 8, 10, and 12.

[0559] In some non-limiting examples, the compound represented by Formula (X) may be a POSS.

[0560] In some non-limiting examples, at least one of the: functional group R, and fluoroalkyl group R / , may be selected independently upon each occurrence of such group in any of the foregoing formulae. Those having ordinary skill in the relevant art will appreciate that any of the foregoing formulae may represent a sub-structure of the compound, and at least one of additional: groups, and moi eties, may be present, which may not be explicitly shown in the above formulae. Those having ordinary skill in the relevant art will appreciate that various formulae provided in the present application may represent at least one of: linear, branched, cyclic, cyclo- linear, and cross-linked, structures.

[0561] While some non-limiting examples have been described herein with reference to a first material and a second material, it will be appreciated that the patterning coating 110 may further include at least one additional material, including, without limitation, at least one of a: third, and fourth, material, and descriptions regarding at least one of the molecular: structures, and properties, of at least one of the: first material, second material, first oligomer, and second oligomer, may be applicable with respect to additional materials which may be contained in the patterning coating 110.

[0562] In some non-limiting examples, a difference in the sublimation temperature of the plurality of materials of the patterning coating 110, including, without limitation, a difference between the first material and the second material, may be one of no more than about: 5, 10, 15, 20, 30, 40, and 50°C.

[0563] In some non-limiting examples, a difference in a melting temperature of the plurality of materials of the patterning coating 110, including, without limitation, a difference between the first material and the second material, may be one of no more than about: 5, 10, 15, 20, 30, 40, and 50°C.

[0564] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may have a substantially low characteristic surface energy.

[0565] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first and second, material, may have a low characteristic surface energy of no more than about 20 dynes / cm.

[0566] In some non-limiting examples, the surface energy of each of the at least two materials of the patterning coating 110, including, without limitation, those of the first material and the second material, may be one of no more about: 25, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, and 10, dynes / cm.

[0567] In some non-limiting examples, a refractive index at a wavelength at least one of: 500, and 460, nm, of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be one of no more than about: 1.5, 1.45, 1.44, 1.43, 1.42, and 1.41.

[0568] In some non-limiting examples, a molar weight of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be one of at least about: 750, 1,000, 1,250, 1,500, 1,750, and 2,000, g / mol.

[0569] In some non-limiting examples, a molar weight of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be one of no more than about: 10,000, 8,000, 7,000, and 5,000, g / mol.

[0570] In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials exhibiting similar thermal properties. In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials with similar thermal properties, including without limitation, at least one of a: melting, and sublimation, temperature.

[0571] In some non-limiting examples, a method for manufacturing a layered semiconductor device 100, including without limitation, an opto-electronic device 200, may comprise actions of: depositing a patterning coating 110 on a first exposed layer surface 11 of the device 100 in a first portion 101 of a lateral aspect thereof; and depositing a deposited material 431 on a second exposed layer surface 11 of the device 100 in a second portion 102 of the lateral aspect thereof. An initial sticking probability against deposition of the deposited material 431 onto an exposed layer surface 11 of the patterning coating 110 in the first portion 101, may be substantially no more than the initial sticking probability against deposition of the deposited material 431 onto an exposed layer surface 11 in the second portion 102, such that the exposed layer surface 11 of the patterning coating 110 in the first portion 101 may be substantially devoidof a closed coating 140 of the deposited material 431. In some non-limiting examples, the patterning coating 110 deposited on the first exposed layer surface 11 of the device 100 may comprise a first material and a second material.

[0572] In some non-limiting examples, depositing the patterning coating 110 on the first exposed layer surface 11 of the device 100 may comprise providing a mixture comprising a plurality of materials, and causing the mixture to be deposited onto the first exposed layer surface 11 of the device 100 to form the patterning coating 110 thereon. In some non-limiting examples, the mixture may comprise the first material and the second material. In some non-limiting examples, the first material and the second material may both be deposited onto the first exposed layer surface 11 to form the patterning coating 110 thereon.

[0573] In some non-limiting examples, the mixture comprising the plurality of materials may be deposited onto the first exposed layer surface 11 of the device 100 by a PVD process, including without limitation, thermal evaporation. In some non-limiting examples, the patterning coating 110 may be formed by evaporating the mixture from a single evaporation source and causing the mixture to be deposited on the first exposed layer surface 11 of the device 100. In some non-limiting examples, the mixture comprising, in some non-limiting examples, the first material and the second material, may be placed in a single evaporation source (crucible) to be heated under vacuum. Once the evaporation temperature of the materials is reached, a vapor flux generated therefrom may be directed towards the first exposed layer surface 11 of the device 100 to cause the deposition of the patterning coating 110 thereon.

[0574] Without wishing to be bound by any particular theory, it may be postulated that a composition comprising a plurality of materials, including without limitation, a first material and a second material, with at least one of a substantially similar: sublimation temperature, and molar weight, may have applicability in some scenarios calling for the formation of a substantially homogenous patterning coating 110, even over a prolonged deposition period, during which the patterning coating 110 may be deposited from a crucible containing such composition.

[0575] For the purpose of the present disclosure, the terms “composition” and “mixture” may be interchangeably used to refer to the same concept.

[0576] In some non-limiting examples, the patterning coating 110 may be deposited by co-evaporation of the first material and the second material. In some non-limiting examples, the first material may be evaporated from a first evaporation source, and the second material may beconcurrently evaporated from a second evaporation source such that the mixture may be formed in the vapor phase and may be co-deposited onto the first exposed layer surface 11 to provide the patterning coating 110 thereon.Amorphous Rubbery NICs

[0577] In some non-limiting examples, there may be an aim to provide a new material that may be used as an NIC for selective deposition.

[0578] In some non-limiting examples, there may be an aim to provide a new material that may be used as an NIC for selective deposition. In some non-limiting examples, the material may: (1) be compatible with substantially low-temperature inline vacuum processing without substantial risk of introducing cross-contamination of materials; and (2) be capable of patterning at least one of a: metal, metal alloy, and metal salt, with a broad range of evaporation / sublimation temperatures and work functions, (3) exhibits a surface energy that is no less than at least one of about 19 dynes / cm, 20 dynes / cm, 21 dynes / cm, and 22 dynes / cm when formed into a thin film form; (4) exhibits a melting temperature that is no less than at least one of about: 25° C, 50°C, 70°C, 75°C, 80°C, 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C; and (5) be capable of patterning the deposited material such that substantially no residue remains of the deposited material on the NIC.

[0579] In some non-limiting examples, a material that may be substantially devoid of at least one of a: (i) fluoroalkyl group; (ii) perfluoroalkyl group comprising a plurality of perfluorinated C atoms that are bonded together, may have increased applicability in some scenarios.

[0580] For OLED applications, selective deposition of a metallic thin film comprising at least one of: Mg, Ag, MgAg, Yb, LiF, LiF:Yb, Au, Cu, Pd, Li, LiAg, and Ca, may have substantially high applicability in some scenarios. In some non-limiting examples, MgAg may be an alloy commonly used as a cathode. In some non-limiting examples, Yb, LiF, and LiF : Yb may be employed as electron injection layers (EILs) that comprise part of the metallic cathode layer structure. RSC Adv., 9, 42561 (2019). In some non-limiting examples, other low work function metals, including without limitation: Li, Ca, and their alloys with other metals, may have applicability as at least one of: a cathode material, and an EIL. In some non-limiting examples, Ag-Cu-Pd alloys may be used as high conductivity electrodes [ACS Appl. Mater. Interfaces 14, 13, 15756-15764 (2022)]. In some non-limiting examples, combinations of alkaline earth metal(s) and Ag may be useful as at least one of: a cathode material, and an EIL.Non-limiting examples of such combinations include LiAg as described in US Patent Application Publication No. 2024 / 0341116 entitled “Light-emitting device, and electronic apparatus and electronic equipment, each including the light-emitting device”, filed 19 January 2024 by Choi et al.

[0581] In some non-limiting examples, an NIC may have substantially high applicability in the selective deposition of these thin films that leaves a minimum amount of residual material. In some non-limiting examples, such NIC may have a substantially low initial sticking probability and a substantially high deposition contrast.

[0582] In some non-limiting examples, an NIC that have does not substantially device reliability may have increased applicability in some scenarios. In some non-limiting examples, such NIC may have a melting temperature of one of at least about: 25° C, 50°C, 70°C, 75°C, 80°C, 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C. In some non-limiting examples, such NIC may have substantially high cohesive strength and adhesive strength to adjacent layers. In some non-limiting examples, an NIC with moderate surface energy, including without limitation between about 20-25 dynes / cm, may have substantially high applicability in scenarios that call for increased device reliability. In some non-limiting examples, cohesive strength and adhesive strength to adjacent layers may be substantially low for a material that has a substantially low surface energy, including without limitation no more than about 20 dynes / cm, and such material may cause cohesive / adhesive failure when used in certain scenarios.

[0583] In some non-limiting examples, a compound that may be substantially devoid of fluoroalkyl groups may have substantially high applicability in some scenarios, as the presence of fluoroalkyl groups in a compound may reduce the solubility of the compound in non-fluorinated solvents and decrease a surface energy of the coatings formed with such compound. In some non- limiting examples, materials comprising a perfluoroalkyl group comprising a plurality of perfluorinated C atoms that are bonded together may have reduced applicability in some scenarios, in light of the evaluation, in various jurisdictions, of increasing regulatory restrictions against the manufacture and use of such class of materials. In some non-limiting examples, use of materials containing such perfluoroalkyl groups may have reduced applicability in some scenarios, as the presence of such groups may substantially reduce the solubility of the compound in non-fluorinated solvents thus substantially: increasing a difficulty of cleaning, including without limitation, removal, of the material from various equipment and parts used during panel fabrication, and reducing reliability of devices fabricated using such material due tothe substantially low surface energy of the material and a comcomitant substantial increase in a likelihood of cohesive / adhesive failure when incorporated into devices.

[0584] In some non-limiting examples, an NIC that can be formed by low-temperature inline vacuum thermal evaporation may have increased applicability in some scenarios. In some non-limiting examples, such material may exhibit a sublimation / evaporation temperature, under vacuum, that may have applicability in vacuum-based deposition at temperatures that may be no more than the thermal decomposition temperature to allow a film to be formed using such material.

[0585] In some non-limiting examples, an NIC that can be patterned using an FMM may have increased applicability in some scenarios. In some non-limiting examples, this process may call for a substantially low deposition temperature, including without limitation, of no more than about 400°C, to substantially reduce warping of the FMM. In some non-limiting examples, this process may call for a substantially thin layer thickness, including without limitation, of no more than about 100 nm, to reduce buildup of material on the mask. In some non-limiting examples, this process may call for a substantially high solubility of the NIC in a non-fluorinated solvent, including without limitation, at least lOmg / ml in NMP, to periodically clean the FMM of the material between use.

[0586] In some non-limiting examples, the material for patterning layer may have a solubility of no less than at least one of: 10 mg / mL, 50 m...

Claims

What is claimed is1. A compound comprising: a phosphazene moiety, and a fragment represented by Chemical Formula (F-1):wherein:* represents attachment to the phosphazene moiety;Cy represents a cyclic moiety;RLrepresents a linker moiety;Z1, Z2, and Z4each represent a ring atom of the cyclic moiety, and is a carbon (C) atom;RAcomprises at least one of: fluorine (F), a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, and an unsubstituted fluoroalkoxy group; andRBcomprises at least one of: hydrogen (H), deuterium (D), a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted a fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

2. The compound of claim 1, wherein the fragment represented by Chemical Formula (F-1) comprises at least one ring substituent Rc.

3. The compound of claim 2, wherein the fragment is represented by Chemical Formula(F-2):wherein:Rcrepresents at least one ring substituent, each independently comprise one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

4. The compound of claim 1 or 3, wherein the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), comprises at least one F atom.

5. The compound of claim 1 or 3, wherein the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), comprises one of no more than about: 45, 32, 27, 15, 7, 4, and 3, F atoms.

6. The compound of claim 1 or 3, wherein the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), comprises one of no more than about: 15, 12, 11, 10, and 6, sp2C atoms.

7. The compound of claim 1 or 3, wherein the fragment represented by at least one of Chemical Formulae: (F-1), and (F-2), comprises at least one of an: F atom bonded directly to an sp2C atom; F atom bonded directly to an sp3C atom, the sp3C atom being bonded directly to an sp2C atom; F atom bonded directly to an sp3C atom, the sp3C atom being bonded directly to an oxygen (O) atom, and F atom bonded directly to an sp3C atom, the sp3C atom being bonded directly to a sulfur (S) atom.

8. The compound of claim 1 or 3, wherein at least one of: R ', and RC, comprise(s) at least one F atom.

9. The compound of claim 3, wherein the fragment is represented by Chemical Formula(F-3):(F-3) wherein:Z3represents represent a ring atom of the cyclic moiety, and is a C atom;10. The compound of claim 9, wherein each RAindependently represents one of: H, D, F, and CH3, and at least one RArepresents one of: F, and CH3.

11. The compound of claim 1 or 3, wherein the compound is represented by ChemicalFormula (A-1):(A-1) wherein: each L independently represent a ligand moiety; at least one / . is represented by one of Chemical Formulae: (F-1), and (F-2); and n is an integer of between 3 to 5.

12. The compound of claim 1 or 3, wherein the compound is represented by one ofChemical Formulae: (A-2), and (A-3):(A-2)(A-3) wherein: each L independently represents a ligand moiety; and at least one L. is represented by one of Chemical Formulae: (F-1), and (F-2).

13. The compound of claim 11 or 12, wherein at least one L comprises at least one of: H, F, chlorine (Cl), a hydroxyl moiety, a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted cycloalkyl moiety, an unsubstituted cycloalkyl moiety, a substituted alkoxy moiety, an unsubstituted alkoxy moiety, an unsubstituted aryloxy moiety, a substituted aryloxy moiety, an unsubstituted aryl moiety, a substituted aryl moiety, an unsubstituted fluoroaryl moiety, a substituted fluoroaryl moiety, an unsubstituted heteroaryloxy moiety, a substituted heteroaryloxy moiety, an unsubstituted cycloheteroalkyl moiety, a substituted cycloheteroalkyl moiety, an unsubstituted alkylsilyl moiety, a substituted alkylsilyl moiety, an unsubstituted alkylsiloxy moiety, a substituted alkylsiloxy moiety, an unsubstituted amino moiety, a substituted amino moiety, an amine moiety, an unsubstituted alkylamine moiety, a substituted alkylamine moiety, an unsubstituted arylamine moiety, a substituted arylamine moiety, a cyano moiety, an unsubstituted phosphazo moiety, a substituted phosphazo moiety, an unsubstituted siloxane moiety, a substituted siloxane moiety, a silane moiety, and an organosilicon moiety.

14. The compound of claim 11 or 12, wherein at least one L is one of: an unsubstituted phenoxy moiety, and a substituted phenoxy moiety.

15. The compound of claim 11 or 12, wherein a ratio of a total number of F atoms to a total number of sp2atoms present in at least one L is one of at least about: 0.42, 0.50, 0.58, 0.67, 0.75, 0.83, and 1.17.

16. The compound of claim 11 or 12, wherein a ratio of a total number of F atoms to a number of sp2C atoms present in at least L is one of at least about: 0.42, 0.50, 0.58, 0.67, 0.75, 0.83, and 1.17.

17. The compound of claim 11 or 12, wherein a ratio of a total number of F atoms to a number of sp2C atoms present in each L is one of no more than about: 4.50, 4.32, 3.85, 3.28, 2.50, 2.25, 2.00, 1.17, 0.83, 0.67, 0.33, 0.25, 0.17, and 0.08.

18. The compound of claim 1, wherein RLcomprises at least one of: a single bond, CH2, CF2, CHF, O, OCH2, S, a secondary amine, a tertiary amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, and a phosphazo moiety.

19. The compound of claim 3, wherein the fragment is represented by one of Chemical Formulae: (F-4) and (F-5):wherein:Z3, Z5, and Z6is each independently one of: C, boron (B), nitrogen (N), S, O, phosphorus (P), and silicon (Si).

20. The compound of claim 19, wherein in Chemical Formulae (F-4) and (F-5), each of Z1to Z6is C.

21. The compound of claim 19, wherein in Chemical Formulae (F-4) and (F-5), each of Z2, Z4, Z6is N, and each of Z1, Z3, Z5is C.

22. The compound of claim 3, wherein the fragment is represented by one of: ChemicalFormulae (F-6)-(F-9):wherein:Z3and Z5is each independently one of: C, B, N, S, O, P, and Si.

23. The compound of claim 22, wherein in Chemical Formulae (F-6)-(F-9), each of Z1to Z5is C.

24. The compound of claim 1, wherein Cy comprises a polycyclic moiety.

25. The compound of claim 1, wherein Cy comprises an aromatic moiety.

26. The compound of claim 1, wherein Cy is a phenyl moiety.

27. The compound of claim 1, wherein RAis one of: F, CH3, and OCF3.

28. The compound of claim 1, wherein RBis one of: H, D, OCF3, CH3, and OCH3.

29. The compound of claim 1, wherein the compound is one of: a small molecule, and an oligomeric rubber.

30. The compound of claim 1, wherein a molar weight of the compound is one of no more than about: 100,000, 75,000, 10,000, 8,000, 7,000, and 5,000, g / mol.

31. The compound of claim 1, wherein the compound exhibits a surface energy of one of at least about: 19, 20, 21, 22, and 23, dynes / cm, when formed as one of a: coating, and patterning coating.

32. The compound of claim 1, wherein the compound exhibits a surface energy of one of no more than about: 29, 28, 26, 25, 24, and 23, dynes / cm, when formed as one of a: coating, and patterning coating.

33. The compound of claim 1, wherein the compound exhibits a surface energy of one of between about: 19-25, 20-25, 21-24, 19-29, and 22-24, dynes / cm, when formed as one of a: coating, and patterning coating.

34. The compound of claim 1, wherein the compound has a glass transition temperature of one of no more than about: 65°C, 55°C, 45°C, 35°C, 30°C, and 25°C.

35. The compound of claim 1, wherein the compound has a glass transition temperature of one of at least about: -50°C, -30°C, -25°C, -20°C, -15°C, -10°C, -5°C, and 0°C.

36. The compound of claim 1, wherein the compound has a glass transition temperature of one of between about: -30-60°C, -20-50°C, -10-50°C, 0-40°C, and 5-35°C.

37. The compound of claim 1, wherein the compound has a sublimation temperature of one of at least about: 150°C, 125°C, 110°C, 100°C, 90°C, and 75°C.

38. The compound of claim 1, wherein the compound has a sublimation temperature of one of no more than about: 300°C, 350°C, 400°C, and 500°C.

39. The compound of claim 1, wherein the compound has a sublimation temperature of one of between about: 100-320°C, 120-300°C, 140-280°C, and 150-250°C.

40. The compound of claim 1, wherein the compound has a melting temperature of one of at least about: 50°C, 70°C, 75°C, 80°C, 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, and 200°C.

41. The compound of claim 1, wherein the compound has a melting temperature of one of at least about: 100°C, 110°C, 120°C, and 130°C.

42. The compound of claim 1, wherein the compound has a melting temperature of one of no more than about: 350°C, 280°C, 250°C, 230°C, 220°C, 200°C, 190°C, 180°C, 170°C, 160°C, and 150°C.

43. The compound of claim 1, wherein the compound has a melting temperature of one of between one of about: 90-220°C, 100-200°C, 100-180°C and 110-160°C.

44. An opto-electronic device comprising a compound comprising a core moiety and at least one ligand moiety bonded to the core moiety, the ligand moiety comprising a cyclic moiety.

45. The device of claim 44, wherein the ligand moiety comprises F.

46. The device of claim 45, wherein the compound is represented by Chemical Formula (A-1):wherein: each L independently represent the ligand moiety; and n is an integer of between 3 to 5.

47. The device of claim 44, wherein the ligand moiety is substantially devoid of any perfluoroalkyl moiety comprising a plurality of adjacently bonded perfluorinated C atoms.

48. The device of claim 44, wherein the compound is substantially devoid of any perfluoroalkyl moiety comprising a plurality of adjacently bonded perfluorinated C atoms.

49. The device of claim 46, wherein the at least one L is represented by one of Chemical Formulae: (F-1), and (F-2):( - ) wherein:* represents attachment to P;Cy represents a cyclic moiety;RLrepresents a linker moiety;Z1, Z2, and Z4each represents a ring atom of the cyclic moiety, and is a C atom;RAcomprises at least one of: F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, and an unsubstituted fluoroalkoxy group;RBcomprises at least one of: H, D, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted a fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, an unsubstituted heteroaryloxy group, a substituted alkyl silyl group, an unsubstituted alkyl silyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, analkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group; andRcrepresents at least one ring substituent, each independently comprise one of: H, D, F, a substituted alkyl group, an unsubstituted alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryl group, an unsubstituted aryl group, a substituted aryloxy group, an unsubstituted aryloxy group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted fluoroaryloxy group, an unsubstituted fluoroaryloxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted heterocycloalkyl group, an unsubstituted heterocycloalkyl group, a substituted heteroaryloxy group, a unsubstituted heteroaryloxy group, a substituted alkylsilyl group, an unsubstituted alkylsilyl group, a substituted alkylsiloxy group, an unsubstituted alkylsiloxy group, an amino group, an amine group, an alkylamine group, an arylamine group, a cyano group, a phosphazo group, a sulfanyl group, a sulfide group, a sulfonyl group, a thiol group, an alkylthio group, a carbonyl group, a siloxane group, a silane group, and an organosilicon group.

50. The device of claim 49, wherein RLcomprises at least one of: a single bond, CHz, CF2, CHF, O, OCH2, S, a secondary amine, a tertiary amine, a substituted alkylene, an unsubstituted alkylene, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a substituted cycloalkylene, an unsubstituted cycloalkylene, and a phosphazo moiety.

51. The device according to claim 44, further comprising: a patterning coating comprising the composition of claim x, the patterning coating being disposed on a first layer surface of an underlying layer in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

52. The device according to claim 44, further comprising an emissive region comprising: a first electrode and a second electrode, and at least one semiconducting layer disposed between the first and second electrodes.

53. The device according to claim 51, wherein the first portion excludes a lateral aspect of the emissive region.

54. The device of claim 52, wherein the second electrode comprises at least a part of the deposited layer as a layer thereof.

55. The device of claim 52, wherein the first portion includes a lateral aspect of the emissive region.

56. The device of claim 51, further comprising an auxiliary electrode comprising the deposited layer as a layer thereof.

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