Semiconductor element, optical detection device, and semiconductor element production method

Abstract

The present invention improves the external quantum efficiency of a semiconductor element.　The present technology provides a semiconductor element comprising a first electrode, a second electrode, and a photoelectric conversion layer that is provided between the first electrode and the second electrode, wherein a protrusion is disposed on at least part of a surface of at least one layer among a plurality of layers included in a laminated structure which includes the first electrode, the second electrode, and the photoelectric conversion layer. The present technology also provides a semiconductor element production method comprising: forming a laminated structure in which a first electrode, a photoelectric conversion layer, and a second electrode are laminated in this order; and forming a protrusion on at least a part of a surface of at least one layer among a plurality of layers included in the laminated structure.

Description

Semiconductor element, photodetector, and method for manufacturing semiconductor element

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a semiconductor element, a photodetector, and a method for manufacturing a semiconductor element.

[0002] A semiconductor element using a semiconductor material having wavelength selectivity can photoelectrically convert light in a specific wavelength band.

[0003] For example, Patent Document 1 discloses a technology relating to "a solid-state imaging device comprising a photoelectric conversion layer containing first semiconductor nanoparticles and a buffer layer containing second semiconductor nanoparticles, wherein a pn junction surface is formed at the interface between the photoelectric conversion layer and the buffer layer, the product of the carrier concentration and film thickness of the buffer layer is greater than the product of the carrier concentration and diffusion length of minority carriers in the photoelectric conversion layer, and the thickness of the depletion region formed in the photoelectric conversion layer is maximized."

[0004] International Publication No. 2022 / 234806

[0005] However, there is room for improvement in the external quantum efficiency (EQE) of semiconductor devices.

[0006] Therefore, the main object of the present technology is to improve the external quantum yield of a semiconductor device.

[0007] The present technology provides a semiconductor element including: a first electrode; a second electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode; wherein a convex portion is disposed on at least a portion of a surface of at least one layer among a plurality of layers included in a stacked structure including the first electrode, the second electrode, and the photoelectric conversion layer. The convex portion may be disposed between the photoelectric conversion layer and the first electrode. The convex portion may be disposed between the second electrode and the photoelectric conversion layer. The convex portion may be disposed between the second electrode and the photoelectric conversion layer and between the photoelectric conversion layer and the first electrode. The convex portion may be disposed near the center of the surface on which it is disposed. The height of the convex portion may be smaller than the thickness of the photoelectric conversion layer. The height of the convex portion may vary depending on the distance from the center of the surface. The convex portion may be cone-shaped, cylindrical, or spherical. A plurality of the convex portions may be disposed within a single surface. The convex portions may be disposed at equal intervals. The convex portions may have two or more shapes. The convex portions may be arranged randomly without any regularity. A wall portion may be arranged between adjacent stacked structures. The wall portion may contain a material having a refractive index different from that of the photoelectric conversion layer. A light-shielding portion may be arranged between adjacent stacked structures. A reflecting portion may be arranged between adjacent stacked structures. A plurality of the stacked structures may be arranged in a matrix. The present technology may include a stacked structure having the convex portion and a stacked structure not having the convex portion. The present technology also provides a photodetector including a semiconductor element, the semiconductor element including a first electrode, a second electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a convex portion is arranged on at least a part of a surface of at least one layer among a plurality of layers included in the stacked structure including the first electrode, the second electrode, and the photoelectric conversion layer.The present technology also provides a method for manufacturing a semiconductor element, including: forming a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in this order; and forming a convex portion on at least a part of a surface of at least one layer among a plurality of layers in the stacked structure.

[0008] According to the present technology, it is possible to improve the external quantum yield of a semiconductor device. Note that the effects described herein are not necessarily limited to those described herein, and may be any of the effects described in the present disclosure.

[0009] 1 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 2 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 3 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 4 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 5 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 6 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 7 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology. 8 is a schematic cross-sectional view showing a configuration example of a photodetector according to an embodiment of the present technology. 9 is a schematic cross-sectional view showing a configuration example of a photodetector according to an embodiment of the present technology. 10 is a block diagram showing a configuration example of an electronic device according to an embodiment of the present technology. 11 is a schematic view showing a configuration example of a photodetection system 2000 according to an embodiment of the present technology. 12 is a circuit diagram showing an example of a configuration of the photodetection system 2000 according to an embodiment of the present technology. 13 is a schematic cross-sectional view showing a manufacturing method of a semiconductor element according to an embodiment of the present technology. 14 is a schematic cross-sectional view showing a manufacturing method of a semiconductor element according to an embodiment of the present technology. 15 is a schematic cross-sectional view showing a manufacturing method of a semiconductor element according to an embodiment of the present technology. FIG. 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 3 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 4 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 5 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 6 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 7 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology; FIG. 8 is a schematic cross-sectional view showing a method for manufacturing a semiconductor element according to an embodiment of the present technology;Fig. 1 is a schematic cross-sectional view showing a manufacturing method of a semiconductor element according to an embodiment of the present technology; Fig. 2 is a block diagram showing an example of a schematic configuration of a vehicle control system; Fig. 3 is an explanatory diagram showing an example of installation positions of an outside-vehicle information detection unit and an imaging unit; Fig. 4 is a block diagram showing an example of a schematic configuration of an endoscopic surgery system; Fig. 5 is a block diagram showing an example of a functional configuration of a camera head and a CCU;

[0010] Hereinafter, preferred embodiments for implementing the present technology will be described with reference to the drawings. Note that the embodiment described below shows an example of a typical embodiment of the present technology, and does not limit the scope of the present technology. In addition, the present technology can be combined with any of the following examples and their modifications.

[0011] In the following description of the embodiments, configurations may be described using terms including "approximately," such as "approximately parallel" and "approximately perpendicular." For example, "approximately parallel" does not only mean completely parallel, but also means substantially parallel, i.e., including a state where the orientation is deviated from the completely parallel state by, for example, a few percent. The same applies to other terms including "approximately." Furthermore, each figure is a schematic diagram and is not necessarily an accurate depiction. The scale of the drawings has been exaggerated to make the features of the technology easier to understand. Therefore, it should be noted that the scale of the drawings and the scale of the actual device are not necessarily the same.

[0012] Unless otherwise specified, in the drawings, "top" means the top or upper side in the drawing, "bottom" means the bottom or lower side in the drawing, "left" means the left or left side in the drawing, and "right" means the right or right side in the drawing. Furthermore, in the drawings, the same or equivalent elements or members are given the same reference numerals, and redundant explanations will be omitted.

[0013] The description will be given in the following order: 1. First Embodiment of the Present Technology (Example 1 of Semiconductor Element) (1) Overall Configuration (2) Convex Portion (3) Wall Portion 2. Second Embodiment of the Present Technology (Example 2 of Semiconductor Element) 3. Third Embodiment of the Present Technology (Example 3 of Semiconductor Element) 4. Fourth Embodiment of the Present Technology (Example 4 of Semiconductor Element) 5. Fifth Embodiment of the Present Technology (Example 5 of Semiconductor Element) 6. Sixth Embodiment of the Present Technology (Example 6 of Semiconductor Element) 7. Seventh Embodiment of the Present Technology (Example 7 of Semiconductor Element) 8. Eighth Embodiment of the Present Technology (Example 8 of Semiconductor Element) 9. Ninth Embodiment of the Present Technology (Example 1 of Photodetector) 10. Tenth Embodiment of the Present Technology (Example 2 of Photodetector) 11. Eleventh Embodiment of the Present Technology (Example 3 of Photodetector) 12. Twelfth Embodiment of the Present Technology (Example of Electronic Device) 13. Thirteenth Embodiment of the Present Technology (Example of Photodetection System) 14. Fourteenth Embodiment of the Present Technology (Example 1 of Manufacturing Method of Semiconductor Element) 15. 15th embodiment of the present technology (second example of semiconductor element manufacturing method) 16. Application examples of the present technology (1) Application example to a moving body (2) Application example to an endoscopic surgery system

[0014] [1. First Embodiment of the Present Technology (First Example of Semiconductor Element)] [(1) Overall Configuration] The present technology provides a semiconductor element including a first electrode, a second electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a convex portion is arranged on at least a part of a surface of at least one layer among a plurality of layers included in a stacked structure including the first electrode, the second electrode, and the photoelectric conversion layer.

[0015] A configuration example of a semiconductor element according to an embodiment of the present technology will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology.

[0016] 1 , a semiconductor element is formed on a substrate 70. The semiconductor element has a first electrode 11, a second electrode 12, and a photoelectric conversion layer 13 provided between the first electrode 11 and the second electrode 12.

[0017] In this configuration example, a p-type buffer layer 15 is disposed between the second electrode 12 and the photoelectric conversion layer 13. An n-type buffer layer 14 is disposed between the photoelectric conversion layer 13 and the first electrode 11. Note that the p-type buffer layer 15 and the n-type buffer layer 14 do not necessarily have to be disposed in the semiconductor element.

[0018] The stacked structure 17 including the first electrode 11, the second electrode 12, and the photoelectric conversion layer 13 is covered with a protective layer 82. An on-chip lens 90 is disposed on the surface of the protective layer 82 opposite to the side on which the stacked structure 17 is disposed. Light enters the semiconductor element from the on-chip lens 90.

[0019] The on-chip lens 90 is made of, for example, a highly refractive material, such as amorphous silicon or a resin material such as a polymer.

[0020] Examples of materials for the protective layer 82 include SiN (silicon nitride), SiO (silicon oxide), and AlO (aluminum oxide).

[0021] The second electrode 12 is made of, for example, a transparent conductive material so that light from the on-chip lens 90 is incident on the photoelectric conversion layer 13. Examples of transparent conductive materials include ITO (indium tin oxide) and IZO (indium zinc oxide).

[0022] The p-type buffer layer 15 is a barrier layer that suppresses electrons from being injected into the photoelectric conversion layer 13 from the second electrode 12 side. The p-type buffer layer 15 is, for example, a layer having p-type conductivity. In particular, the p-type buffer layer 15 is configured to include, for example, semiconductor nanoparticles having p-type conductivity. These semiconductor nanoparticles are, for example, semiconductor materials having a crystalline structure of several nanometers in size. These semiconductor nanoparticles may be, for example, semiconductor quantum dots having a quantum confinement effect.

[0023] The p-type buffer layer 15 is composed of, for example, PbS-EDT. PbS-EDT is a semiconductor material made by adding ethanedithiol (EDT) to PbS quantum dots. EDT adsorbs onto the surface of PbS, narrowing the band gap of PbS and improving its characteristics.

[0024] Alternatively, the p-type buffer layer 15 may be configured to include, for example, PTB7-TH, which is a semiconductor material made by adding ethanedithiol (EDT) to PTB7, which is an organic semiconductor material.

[0025] The p-type buffer layer 15 may be made of, for example, a bulk semiconductor, which may be, for example, an organic bulk semiconductor (SPIRO-OMeTAD).

[0026] The photoelectric conversion layer 13 absorbs light of a predetermined wavelength band contained in light incident from the outside and converts it into signal charges. These signal charges are sent to a logic circuit 21 that processes the signal charges via the first electrode 11 and the like. The configuration of the logic circuit 21 is not particularly limited. An example of the configuration of the logic circuit 21 will be described later.

[0027] The photoelectric conversion layer 13 is composed of, for example, a deposition layer containing semiconductor nanoparticles having a conductivity type (p-type in this configuration example). These semiconductor nanoparticles are, for example, semiconductor materials having a crystalline structure of several nanometers in size. The semiconductor nanoparticles contained in the photoelectric conversion layer 13 may be, for example, semiconductor quantum dots having a quantum confinement effect. Specifically, these semiconductor nanoparticles may be, for example, PbS, InAs, InSb, or the like.

[0028] The n-type buffer layer 14 is a barrier layer that suppresses hole injection from the first electrode 11 side into the photoelectric conversion layer 13. The n-type buffer layer 14 is, for example, a layer having n-type conductivity. In particular, the n-type buffer layer 14 is configured to include, for example, semiconductor nanoparticles having n-type conductivity. These semiconductor nanoparticles are, for example, semiconductor materials having a crystalline structure of several nanometers in size. These semiconductor nanoparticles may be, for example, semiconductor quantum dots having a quantum confinement effect. Specifically, these semiconductor nanoparticles are configured to include, for example, ZnO.

[0029] The first electrode 11 reflects light toward the photoelectric conversion layer 13. This can improve the light utilization efficiency. Therefore, the first electrode 11 is made of, for example, a metal film having light reflectivity. Examples of the metal film having light reflectivity include gold (Au).

[0030] [(2) Convex Portion] When the photoelectric conversion layer 13 contains semiconductor nanoparticles, there is room for improvement in the external quantum yield (EQE). To improve the external quantum yield, for example, it is possible to increase the film thickness of the photoelectric conversion layer 13 (increase the number of deposited layers). However, if a certain number of layers is stacked, a non-depletion region occurs, signal charge disappears, and the external quantum yield reaches a plateau.

[0031] Therefore, it is preferable to improve the external quantum yield without increasing the film thickness of the photoelectric conversion layer 13. To achieve this, it is preferable to arrange a convex portion 16 on at least a part of the surface of at least one of the multiple layers of the stacked structure 17. When light incident from the on-chip lens 90 collides with the convex portion 16, the light is scattered. This scattering increases the optical path length of the light, thereby promoting photoelectric conversion in the photoelectric conversion layer 13. As a result, the external quantum yield is improved.

[0032] Furthermore, the arrangement of the protrusions 16 increases the area of ​​the interface between the layers, thereby improving the adhesion between the layers.

[0033] Furthermore, by reducing the diffracted light due to scattering, the total reflectance can be reduced and flare can be suppressed.

[0034] At least one of these effects also occurs in other embodiments described below, and therefore, repeated explanations may be omitted in the descriptions of other embodiments.

[0035] The protrusions 16 are arranged on at least a portion of the surface of at least one of the multiple layers of the stacked structure 17. The protrusions 16 may be arranged on one or both surfaces of the second electrode 12. The protrusions 16 may be arranged on one or both surfaces of the p-type buffer layer 15. The protrusions 16 may be arranged on one or both surfaces of the photoelectric conversion layer 13. The protrusions 16 may be arranged on one or both surfaces of the n-type buffer layer 14. The protrusions 16 may be arranged on one or both surfaces of the first electrode 11.

[0036] Furthermore, the number of convex portions 16 is not particularly limited. The number of convex portions 16 may be one or more. In the configuration example shown in this figure, the convex portions 16 are arranged between the photoelectric conversion layer 13 and the first electrode 11. Specifically, the convex portions 16 are arranged at the interface between the photoelectric conversion layer 13 and the n-type buffer layer 14, and at the interface between the n-type buffer layer 14 and the first electrode 11.

[0037] Because the first electrode 11 has optical reflectivity, light that strikes the protrusions 16 is scattered and reflected toward the photoelectric conversion layer 13. This scattering and reflection lengthens the optical path length of the light, thereby promoting photoelectric conversion in the photoelectric conversion layer 13. As a result, the external quantum yield is improved.

[0038] When the protrusions 16 are disposed at an interface, it is preferable that the difference in refractive index between the layers in contact with this interface is large. The larger the difference in refractive index, the more light is scattered. As a result, the external quantum efficiency is improved.

[0039] If the height of the protrusions 16 is greater than the thickness of the photoelectric conversion layer 13, the process of forming the photoelectric conversion layer 13 becomes complicated, and the manufacturing efficiency of the semiconductor device decreases. Therefore, it is preferable that the height of the protrusions 16 is smaller than the thickness of the photoelectric conversion layer 13. In addition, it is preferable that the width of the protrusions 16 is smaller than the width of the stacked structure 17.

[0040] The on-chip lens 90 focuses light near the center of the surface. Therefore, it is preferable that the convex portions 16 are arranged near the center of the surface. By arranging the convex portions 16 near the center of the surface, light is scattered uniformly. As a result, the external quantum yield is improved.

[0041] In addition to the protrusions 16 or instead of the protrusions 16, recesses having a recessed shape may be arranged.

[0042] [(3) Walls] Walls 18 are disposed between adjacent stacked structures 17. Light incident from the on-chip lens 90 is reflected by the walls 18 and returns to the photoelectric conversion layer 13, thereby improving the external quantum yield. Furthermore, the provision of the walls 18 can prevent light from mixing with adjacent stacked structures 17. As a result, flare can be suppressed.

[0043] In order to reflect light, the wall portion 18 preferably contains a material having a refractive index different from that of the photoelectric conversion layer 13. The wall portion 18 may contain, for example, the same material as the protective layer 82. Examples of materials that can be used for the protective layer 82 include SiN, SiO, and AlO. The refractive index of these materials is approximately 1.4 to 1.8.

[0044] On the other hand, when PbS, InAs, or the like is used as the material of the photoelectric conversion layer 13, the refractive index of the photoelectric conversion layer 13 is approximately 2.1 to 2.2. Since the refractive indexes of the photoelectric conversion layer 13 and the wall portions 18 are different from each other, light is reflected at the interface between the photoelectric conversion layer 13 and the wall portions 18.

[0045] In another configuration example, the wall portion 18 may include a metal material. Examples of the metal material include Al, AlCu, Cu, etc. Alternatively, the wall portion 18 may include a porous organic material. Alternatively, the wall portion 18 may be a medium such as air.

[0046] The above description of the semiconductor element according to the first embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0047] 2. Second Embodiment of the Present Technology (Second Example of Semiconductor Element) A configuration example of a semiconductor element according to an embodiment of the present technology will be described with reference to Fig. 2. Fig. 2 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology.

[0048] 2 , the convex portions 16 are disposed between the second electrode 12 and the photoelectric conversion layer 13. Specifically, the convex portions 16 are disposed at the interface between the protective layer 82 and the second electrode 12, the interface between the second electrode 12 and the p-type buffer layer 15, and the interface between the p-type buffer layer 15 and the photoelectric conversion layer 13.

[0049] Because the second electrode 12 is optically transparent, light that strikes the protrusions 16 is scattered while traveling toward the photoelectric conversion layer 13. This scattering increases the optical path length of the light, thereby promoting photoelectric conversion in the photoelectric conversion layer 13. As a result, the external quantum yield is improved.

[0050] The above description of the semiconductor element according to the second embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0051] 3. Third Embodiment of the Present Technology (Third Example of Semiconductor Element) A configuration example of a semiconductor element according to an embodiment of the present technology will be described with reference to Fig. 3. Fig. 3 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology.

[0052] 3 , convex portions 16 are disposed between the second electrode 12 and the photoelectric conversion layer 13, and between the photoelectric conversion layer 13 and the first electrode 11. Specifically, convex portions 16 are disposed at the interface between the protective layer 82 and the second electrode 12, the interface between the second electrode 12 and the p-type buffer layer 15, and the interface between the p-type buffer layer 15 and the photoelectric conversion layer 13. Furthermore, convex portions 16 are disposed at the interface between the photoelectric conversion layer 13 and the n-type buffer layer 14, and the interface between the n-type buffer layer 14 and the first electrode 11.

[0053] Because the second electrode 12 is optically transparent, light that strikes the protrusions 16 is scattered while traveling toward the photoelectric conversion layer 13. This scattering increases the optical path length of the light, thereby promoting photoelectric conversion in the photoelectric conversion layer 13. As a result, the external quantum yield is improved.

[0054] Because the first electrode 11 has optical reflectivity, light that strikes the protrusions 16 is scattered and reflected toward the photoelectric conversion layer 13. This scattering and reflection lengthens the optical path length of the light, thereby promoting photoelectric conversion in the photoelectric conversion layer 13. As a result, the external quantum yield is improved.

[0055] From the above, the semiconductor device according to the third embodiment may have an improved external quantum efficiency compared to the semiconductor devices according to the first and second embodiments.

[0056] The above description of the semiconductor element according to the third embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0057] 4. Fourth Embodiment of the Present Technology (Fourth Example of Semiconductor Element)] A configuration example of a semiconductor element according to an embodiment of the present technology will be described with reference to Fig. 4. Fig. 4 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology.

[0058] 4, the height of the protrusions 16 varies depending on the distance from the center of the surface. By forming the protrusions 16 in this manner, it is possible to scatter light uniformly.

[0059] In this configuration example, the height of the convex portions 16 gradually increases as they approach the center of the surface. Alternatively, the height of the convex portions 16 may gradually decrease as they approach the center of the surface.

[0060] Furthermore, the interval between the convex portions 16 may vary depending on the distance from the center of the surface.

[0061] The above description of the semiconductor element according to the fourth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0062] 5. Fifth embodiment of the present technology (semiconductor element example 5) There is no particular limitation on the shape of the protrusions 16. The protrusions 16 may be, for example, cone-shaped, column-shaped, or spherical.

[0063] Examples of cones include circular cones and pyramids. Examples of cones include regular cones and elliptical cones. Examples of pyramids include prisms with polygonal bases, such as triangular pyramids, square pyramids, and pentagonal pyramids. The corners of the polygons may be rounded.

[0064] Examples of the prism include a circular cylinder, a rectangular cylinder, and an anti-rectangular cylinder. Examples of the circular cylinder include a regular circular cylinder and an elliptical cylinder. Examples of the rectangular cylinder include a prism with a polygonal base, such as a triangular prism, a quadrangular prism, and a pentagonal prism. The corners of this polygon may be rounded.

[0065] The sphere includes, for example, a hemisphere, etc. The cross section of the sphere may be a perfect circle or an ellipse.

[0066] Examples of the shape of the protrusions 16 will be described with reference to Fig. 5. Fig. 5 is a schematic cross-sectional view showing examples of the shape of the protrusions 16 according to an embodiment of the present technology.

[0067] As shown in Fig. 5A, the protrusions 16 may be cone-shaped, as shown in Fig. 5B, the protrusions 16 may be column-shaped, or as shown in Fig. 5C, the protrusions 16 may be hemispherical.

[0068] The above description of the semiconductor element according to the fifth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0069] 6. Sixth Embodiment of the Present Technology (Sixth Example of Semiconductor Element) One or more convex portions may be arranged within one surface. An example of the arrangement of the convex portions 16 as viewed from the on-chip lens 90 side will be described with reference to FIG. 6. FIG. 6 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology, and corresponds to the cross-sectional line shown in FIG.

[0070] 6A, a plurality of protrusions 16 may be arranged on one surface. In this example, the protrusions 16 are arranged at equal intervals.

[0071] Alternatively, as shown in FIGS. 6B and 6C, one protrusion 16 may be arranged on one surface.

[0072] 6D , convex portions 16 of two or more shapes may be arranged. Convex portions 16 of two or more shapes may be arranged within one surface, or convex portions 16 of different shapes may be arranged on each of multiple surfaces. For example, cone-shaped convex portions 16 may be arranged between the second electrode 12 and the photoelectric conversion layer 13, and columnar-shaped convex portions 16 may be arranged between the photoelectric conversion layer 13 and the first electrode 11.

[0073] Alternatively, as shown in Fig. 6E, the protrusions 16 may be arranged randomly without any regularity. Since the light is bent in random directions, the light can be scattered more effectively. As a result, the external quantum efficiency is improved.

[0074] The above description of the semiconductor element according to the sixth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0075] 7. Seventh Embodiment of the Present Technology (Seventh Example of Semiconductor Element)] A configuration example of a semiconductor element according to an embodiment of the present technology will be described with reference to Fig. 7. Fig. 7 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology.

[0076] 7, a light-shielding portion 19 is disposed between adjacent stacked structures 17. The light-shielding portion 19 blocks light from the on-chip lens 90, thereby preventing the light from entering the adjacent stacked structures 17. As a result, flare can be suppressed. The material of the light-shielding portion 19 is not particularly limited as long as it is a material that absorbs light.

[0077] Furthermore, a reflective portion 20 may be disposed between adjacent stacked structures 17. This reflective portion 20 further reflects the light reflected by the first electrode 11, thereby improving the external quantum yield. The material of the reflective portion 20 is not particularly limited as long as it is a material that reflects light. Examples of materials for the reflective portion 20 include Al, AlCu, and Cu.

[0078] It should be noted that either one of the light-shielding portion 19 and the reflecting portion 20 may be provided, or both may be provided.

[0079] The above description of the semiconductor element according to the seventh embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0080] 8. Eighth Embodiment of the Present Technology (Eighth Example of Semiconductor Element)] A configuration example of a semiconductor element according to an embodiment of the present technology will be described with reference to Fig. 8. Fig. 8 is a schematic cross-sectional view showing a configuration example of a semiconductor element according to an embodiment of the present technology.

[0081] As shown in FIG. 8, a plurality of laminated structures 17 are arranged in a matrix.

[0082] In the configuration example shown in FIG. 8A, a plurality of laminated structures 17 arranged in a matrix all have the same shape, arrangement position and number of protrusions 16.

[0083] 8B, a stacked structure 17A having a convex portion and a stacked structure 17B having no convex portion are arranged in a matrix. The wavelength band of the acquired light can be changed depending on whether or not there is a convex portion.

[0084] 8C and 8D , two or more types of laminated structures are arranged in a matrix. The first laminated structure 171, the second laminated structure 172, and the third laminated structure 173 differ in at least one of the shape, position, and number of the protrusions 16. The wavelength band of the acquired light can be changed depending on the shape, position, and number of the protrusions 16.

[0085] The positions of the laminated structure 17A having a convex portion, the laminated structure 17B not having a convex portion, the first laminated structure 171, the second laminated structure 172, and the third laminated structure 173 are not particularly limited.

[0086] The above description of the semiconductor element according to the eighth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0087] [9. Ninth Embodiment of the Present Technology (Example 1 of Photodetection Device)] The present technology provides a photodetection device including any one of the semiconductor elements according to the first to eighth embodiments. That is, the photodetection device has a first electrode, a second electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and a convex portion is arranged on at least a part of a surface of at least one layer among a plurality of layers included in a stacked structure including the first electrode, the second electrode, and the photoelectric conversion layer.

[0088] A configuration example of a light detection device according to an embodiment of the present technology will be described with reference to Fig. 9. Fig. 9 is a schematic cross-sectional view showing a configuration example of a light detection device according to an embodiment of the present technology.

[0089] 9, the photodetector includes a semiconductor element. The semiconductor element includes, for example, a photoelectric conversion unit formed of a stacked structure of a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12. Note that the p-type buffer layer and n-type buffer layer described above are not shown in the figure.

[0090] In this configuration example, a plurality of protrusions 16 are arranged on a part of the interface between the photoelectric conversion layer 13 and the first electrode 11 .

[0091] The first electrode 11 is formed on an interlayer insulating layer 81. A protective layer 82 is formed on the entire surface including the second electrode 12, and an on-chip lens 90 is provided on the protective layer 82. The interlayer insulating layer 81 and the protective layer 82 are made of a well-known insulating material (for example, SiO ２ The insulating layer 11 may be made of a material such as silicon nitride (SiN).

[0092] The semiconductor element is provided on a semiconductor substrate (more specifically, a silicon semiconductor layer) 70. Here, the light incident surface of the photodetector is referred to as the upper side, and the opposite side is referred to as the lower side.

[0093] A wiring layer 62 made up of a plurality of wires is provided below the photodetector. The wiring layer 62 and the first electrode 11 are connected via a connection hole 64, a pad portion 63, and a contact hole portion 61.

[0094] The semiconductor substrate 70 includes at least one amplifier transistor TR1 that constitutes a logic circuit.ａｍｐ , reset transistor TR1 ｒｓｔ , and the selection transistor TR1 ｓｅｌ A reset transistor TR1 is provided. ｒｓｔ The amplifier transistor TR1 is composed of a gate portion 51, a channel forming region 51A, and source / drain regions 51B and 51C. ａｍｐ The select transistor TR1 is composed of a gate portion 52, a channel forming region 52A, and source / drain regions 52B and 52C. ｓｅｌ is composed of a gate portion 53, a channel forming region 53A, and source / drain regions 53B and 53C.

[0095] The above description of the photodetector according to the ninth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0096] 10. Tenth Embodiment of the Present Technology (Example 2 of Photodetection Device)] A configuration example of a photodetection device according to an embodiment of the present technology will be described with reference to Fig. 10. Fig. 10 is a schematic cross-sectional view showing the configuration example of a photodetection device according to an embodiment of the present technology.

[0097] The photodetector according to this embodiment further includes a charge storage electrode 22 and the like in addition to the photodetector according to the ninth embodiment.

[0098] The charge storage electrode 22 is connected to the logic circuit via a connection hole 66, a pad portion 65, and a wiring layer 62 provided in the interlayer insulating layer 81. By providing the charge storage electrode 22, a kind of capacitor is formed by the photoelectric conversion layer 13, the interlayer insulating layer 81, and the charge storage electrode 22, and the charge of the photoelectric conversion layer 13 can be stored.

[0099] The above description of the photodetector according to the tenth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0100] 11. Eleventh Embodiment of the Present Technology (Example 3 of Photodetection Device)] A configuration example of a photodetection device according to an embodiment of the present technology will be described with reference to Fig. 11. Fig. 11 is a schematic configuration diagram showing the configuration example of a photodetection device according to an embodiment of the present technology.

[0101] As shown in FIG. 11 , the photodetector 1 according to this embodiment is configured to have a pixel region (so-called imaging region) 3 in which pixels 2, each including a plurality of photoelectric conversion elements, are regularly arranged two-dimensionally on a semiconductor substrate 70 (e.g., a silicon substrate), and a peripheral circuit section.

[0102] Each pixel 2 has a photoelectric conversion element (e.g., a photodiode) and multiple pixel transistors (so-called MOS transistors). The multiple pixel transistors can be configured, for example, with a transfer transistor, a reset transistor, and an amplification transistor. A selection transistor can also be added. The equivalent circuit of a unit pixel is the same as a normal one, so a detailed description will be omitted.

[0103] The pixel 2 may have a shared pixel structure, which is composed of multiple photodiodes, multiple transfer transistors, one shared floating diffusion, and each shared pixel transistor.

[0104] The peripheral circuit section includes a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, a control circuit 8, and the like.

[0105] The control circuit 8 receives an input clock and data instructing the operation mode, etc., and outputs data such as internal information of the photodetector. That is, the control circuit 8 generates clock signals and control signals that serve as the basis for the operation of the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. These signals are then input to the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc.

[0106] The vertical drive circuit 4 is configured by, for example, a shift register, selects pixel drive wirings, supplies pulses for driving pixels to the selected pixel drive wirings, and drives the pixels row by row. That is, the vertical drive circuit 4 selects and scans each pixel 2 in the pixel area 3 row by row in the vertical direction, and supplies pixel signals based on signal charges generated in the photoelectric conversion elements (e.g., photodiodes) of each pixel 2 in accordance with the amount of received light to the column signal processing circuit 5 via vertical signal lines 9.

[0107] The column signal processing circuits 5 are arranged, for example, for each column of pixels 2, and perform signal processing such as noise removal for each pixel column on signals output from one row of pixels 2. That is, the column signal processing circuits 5 perform signal processing such as CDS for removing fixed pattern noise specific to the pixels 2, signal amplification, and AD conversion. A horizontal selection switch (not shown) is provided at the output stage of the column signal processing circuit 5 and connected between it and the horizontal signal line 10.

[0108] The horizontal drive circuit 6 is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in turn, causing each of the column signal processing circuits 5 to output a pixel signal to the horizontal signal line 10.

[0109] The output circuit 7 processes and outputs signals sequentially supplied from each of the column signal processing circuits 5 via the horizontal signal line 10. For example, the output circuit 7 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, etc. The input / output terminal 12 exchanges signals with the outside.

[0110] The above description of the photodetector according to the eleventh embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0111] [12. Twelfth Embodiment of the Present Technology (Example of Electronic Device)] The present technology provides an electronic device including any one of the photodetector devices according to the ninth to eleventh embodiments. The above-described photodetector device can be applied to various electronic devices, such as imaging systems such as digital still cameras and digital video cameras, mobile phones with an imaging function, or other devices with an imaging function.

[0112] A configuration example of this electronic device will be described with reference to Fig. 12. Fig. 12 is a block diagram showing a configuration example of an electronic device according to an embodiment of the present technology.

[0113] 12, electronic device 1000 includes an optical system 1001, a photodetector 100, and a DSP (Digital Signal Processor) 1002. DSP 1002, memory 1003, a display device 1004, a recording device 1005, an operation system 1006, and a power supply system 1007 are connected via a bus 1008. Electronic device 1000 is capable of capturing still images and moving images.

[0114] The optical system 1001 is configured to have one or more lenses, and guides image light (incident light) from an object to the photodetector 100 , forming an image on the light-receiving surface (sensor section) of the photodetector 100 .

[0115] Any of the photodetector devices having the above-described configuration examples is applied as the photodetector 100. Electrons are accumulated in the photodetector 100 for a certain period of time in accordance with an image formed on a light-receiving surface via an optical system 1001. A signal corresponding to the electrons accumulated in the photodetector 100 is then supplied to a DSP 1002.

[0116] The DSP 1002 performs various signal processing on the signal from the photodetector 100 to acquire an image, and temporarily stores the image data in a memory 1003. The image data stored in the memory 1003 is recorded in a recording device 1005 or supplied to a display device 1004 to display the image. An operation system 1006 accepts various operations by a user and supplies operation signals to each block of the electronic device 1000, and a power supply system 1007 supplies power necessary to drive each block of the electronic device 1000.

[0117] The above description of the electronic device according to the twelfth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0118] 13. Thirteenth Embodiment of the Present Technology (Example of Light Detection System) The present technology provides a light detection system including any one of the light detection devices according to the ninth to eleventh embodiments.

[0119] An example configuration of this light detection system will be described with reference to Fig. 13A and Fig. 13B. Fig. 13A is a schematic diagram showing an example configuration of a light detection system 2000 according to an embodiment of the present technology. Fig. 13B is a circuit diagram showing an example configuration of the light detection system 2000 according to an embodiment of the present technology.

[0120] The light detection system 2000 includes a light emitting device 2001 as a light source unit that emits infrared light L2, and a light detecting device 2002 as a light receiving unit having a photoelectric conversion element. The light detecting device 2002 may be the light detecting device 100 described above. The light detecting system 2000 may further include a system control unit 2003, a light source driving unit 2004, a sensor control unit 2005, a light source side optical system 2006, and a camera side optical system 2007.

[0121] The photodetector 2002 can detect light L1 and light L2. Light L1 is external ambient light reflected by the subject (object to be measured) 2100. Light L2 is light emitted by the light-emitting device 2001 and then reflected by the subject 2100. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by a photoelectric conversion unit in the photodetector 2002, and light L2 can be detected by a photoelectric conversion region in the photodetector 2002. Image information of the subject 2100 can be obtained from light L1, and distance information between the subject 2100 and the photodetector system 2000 can be obtained from light L2.

[0122] The light detection system 2000 can be mounted on, for example, an electronic device such as a smartphone or a mobile object such as a car. The light emitting device 2001 can be configured by, for example, a semiconductor laser, a surface emitting semiconductor laser, or a vertical cavity surface emitting laser (VCSEL).

[0123] The method of detecting the light L2 emitted from the light emitting device 2001 by the photodetector 2002 can be, for example, an iTOF system, but is not limited to this. In the iTOF system, the photoelectric conversion unit can measure the distance to the subject 2100 by, for example, time-of-flight (TOF).

[0124] As a method for detecting the light L2 emitted from the light emitting device 2001 by the light detection device 2002, for example, a structured light method or a stereo vision method can be adopted. For example, in the structured light method, a predetermined pattern of light is projected onto the subject 2100, and the distance between the light detection system 2000 and the subject 2100 can be measured by analyzing the degree of distortion of the pattern. In addition, in the stereo vision method, for example, two or more cameras are used to acquire two or more images of the subject 2100 viewed from two or more different viewpoints, thereby making it possible to measure the distance between the light detection system 2000 and the subject.

[0125] The light emitting device 2001 and the light detecting device 2002 can be controlled synchronously by a system control unit 2003 .

[0126] The above description of the light detection system according to the thirteenth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0127] [14. Fourteenth Embodiment of the Present Technology (First Example of Semiconductor Element Manufacturing Method)] The present technology provides a method for manufacturing a semiconductor element, including: forming a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in this order; and forming a convex portion on at least a part of a surface of at least one layer among a plurality of layers included in the stacked structure.

[0128] A method for manufacturing the semiconductor element shown in Fig. 1 will be described with reference to Fig. 14 to Fig. 22. Fig. 14 to Fig. 22 are schematic cross-sectional views showing a method for manufacturing a semiconductor element according to an embodiment of the present technology.

[0129] First, as shown in FIG. 14, the first electrode 11 is formed.

[0130] 15, for example, a photolithography technique is used to form a convex portion. Specifically, a photoresist 23 is applied onto the first electrode 11, and then exposure, development, and the like are performed.

[0131] Next, as shown in FIG. 16, for example, etching is performed to form the convex portions 16.

[0132] 17, the n-type buffer layer 14 is formed by, for example, a coating method or a CVD (Chemical Vapor Deposition) method.

[0133] 18, the photoelectric conversion layer 13 is formed. For example, a coating method can be used for this formation.

[0134] 19 , a p-type buffer layer 15 and a second electrode 12 are formed on the photoelectric conversion layer 13. For example, a coating method or a CVD method can be used for this formation. In this manner, a stacked structure is formed in which the first electrode 11, the photoelectric conversion layer 13, and the second electrode 12 are stacked in this order, and a convex portion is formed on at least a part of the surface of at least one layer among the multiple layers of this stacked structure.

[0135] Next, as shown in FIG. 20, for example, photolithography and etching are performed to divide the laminated structure into a plurality of laminated structures.

[0136] 21, a protective layer 82 is formed, which can be formed by, for example, a coating method or a CVD method.

[0137] Finally, as shown in FIG. 22, an on-chip lens 90 is formed.

[0138] The above description of the semiconductor device manufacturing method according to the fourteenth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0139] 15. Fifteenth Embodiment of the Present Technology (Second Example of Manufacturing Method of Semiconductor Element)] A manufacturing method of the semiconductor element shown in Fig. 2 will be described with reference to Fig. 23 to Fig. 29. Fig. 23 to Fig. 29 are schematic cross-sectional views showing a manufacturing method of a semiconductor element according to an embodiment of the present technology.

[0140] First, as shown in FIG. 23, the first electrode 11 is formed.

[0141] 24 , an n-type buffer layer 14, a photoelectric conversion layer 13, a p-type buffer layer 15, and a second electrode 12 are formed on the first electrode 11. For example, a coating method or a CVD (Chemical Vapor Deposition) method can be used for this formation. In this manner, a stacked structure is formed in which the first electrode 11, the photoelectric conversion layer 13, and the second electrode 12 are stacked in this order.

[0142] Next, convex portions are formed using photolithography, as shown in Fig. 25. Specifically, a photoresist 24 is applied onto the second electrode 12, and then exposed to light, developed, and so on.

[0143] 26, etching is performed to form a convex portion 16. In this way, a convex portion is formed on at least a part of the surface of at least one layer among the plurality of layers of this laminated structure.

[0144] Next, as shown in FIG. 27, for example, photolithography and etching are performed to divide the laminated structure into a plurality of laminated structures.

[0145] 28, a protective layer 82 is formed by, for example, a coating method or a CVD method.

[0146] Finally, as shown in FIG. 29, an on-chip lens 90 is formed.

[0147] The above description of the semiconductor device manufacturing method according to the fifteenth embodiment of the present technology can be applied to other embodiments of the present technology unless there is a particular technical contradiction.

[0148] [16. Application Examples of the Present Technology] [(1) Application Examples to Mobile Bodies] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0149] FIG. 30 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0150] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 30 , the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0151] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0152] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0153] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0154] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0155] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0156] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0157] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0158] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0159] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 30, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0160] FIG. 31 is a diagram showing an example of the installation position of the imaging unit 12031.

[0161] In FIG. 31 , the imaging unit 12031 includes imaging units 12101 , 12102 , 12103 , 12104 , and 12105 .

[0162] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0163] 31 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0164] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0165] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0166] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0167] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0168] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the image capture unit 12031 among the components described above. By applying the technology according to the present disclosure, it is possible to improve the external quantum yield of the semiconductor element in the image capture unit 12031.

[0169] (2) Application Example to Endoscopic Surgery System The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0170] FIG. 32 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0171] 32 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0172] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0173] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0174] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0175] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various types of image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0176] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0177] The light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing the surgical site, etc.

[0178] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0179] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0180] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical site, can be configured from a white light source, such as an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 11203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, color images can be obtained without providing a color filter to the image sensor.

[0181] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0182] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may involve fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation may involve irradiating excitation light onto body tissues and observing the fluorescence from the tissue (autofluorescence observation), or by locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0183] FIG. 33 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0184] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0185] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0186] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. The 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0187] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0188] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0189] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0190] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0191] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0192] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0193] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0194] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0195] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102 .

[0196] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0197] Furthermore, the control unit 11413 displays the captured image showing the surgical site, etc., on the display device 11202 based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0198] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable of these.

[0199] In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0200] The above describes an example of an endoscopic surgery system to which the technology disclosed herein can be applied. The technology disclosed herein can be applied to, for example, the imaging unit 11402 among the components described above. By applying the technology disclosed herein, it is possible to improve the external quantum yield of the semiconductor element in the imaging unit 11402.

[0201] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0202] The above describes an example of an in-vivo information acquisition system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the image capturing unit 10112 and the like among the above-described configurations.

[0203] It should be noted that the embodiments of the present technology are not limited to the above-described embodiments, and various modifications are possible within the scope of the present technology. The specific numerical values, shapes, materials (including compositions), etc. described in each embodiment are merely examples, and the present technology is not limited to these.

[0204] The present technology may also have the following configurations. [1] A semiconductor element including a first electrode, a second electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein a convex portion is disposed on at least a part of a surface of at least one layer among a plurality of layers included in a stacked structure including the first electrode, the second electrode, and the photoelectric conversion layer. [2] The semiconductor element according to [1], wherein the convex portion is disposed between the photoelectric conversion layer and the first electrode. [3] The semiconductor element according to [1], wherein the convex portion is disposed between the second electrode and the photoelectric conversion layer. [4] The semiconductor element according to [1], wherein the convex portion is disposed between the second electrode and the photoelectric conversion layer and between the photoelectric conversion layer and the first electrode. [5] The semiconductor element according to any one of [1] to [4], wherein the convex portion is disposed near the center of the surface on which it is disposed. [6] The semiconductor element according to any one of [1] to [5], wherein the height of the convex portion is smaller than the thickness of the photoelectric conversion layer. [7] The semiconductor element according to any one of [1] to [6], wherein the height of the convex portion varies depending on the distance from the vicinity of the center in the plane. [8] The semiconductor element according to any one of [1] to [7], wherein the convex portion has a cone shape, a column shape, or a sphere shape. [9] The semiconductor element according to any one of [1] to [8], wherein a plurality of the convex portions are arranged in one plane.

[10] The semiconductor element according to [9], wherein the convex portions are arranged at equal intervals.

[11] The semiconductor element according to [9] or

[10] , wherein the convex portions have two or more different shapes.

[12] The semiconductor element according to any one of [9] to

[11] , wherein the convex portions are arranged randomly without any regularity.

[13] The semiconductor element according to any one of [1] to

[12] , wherein a wall portion is arranged between adjacent stacked structures.

[14] The semiconductor element according to

[13] , wherein the wall portion contains a material having a refractive index different from that of the photoelectric conversion layer.

[15] The semiconductor element according to any one of [1] to

[14] , wherein a light-shielding portion is disposed between adjacent stacked structures.

[16] The semiconductor element according to any one of [1] to

[15] , wherein a reflective portion is disposed between adjacent stacked structures.

[17] The semiconductor element according to any one of [1] to

[15] , wherein a plurality of the stacked structures are arranged in a matrix.

[18] The semiconductor element according to

[17] , comprising: the stacked structure having the convex portion; and the stacked structure not having the convex portion.

[19] A photodetector comprising a semiconductor element, the semiconductor element having: a first electrode; a second electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode; and a convex portion is disposed on at least a portion of a surface of at least one layer among a plurality of layers included in the stacked structure including the first electrode, the second electrode, and the photoelectric conversion layer.

[20] A method for manufacturing a semiconductor element, the method comprising: forming a stacked structure in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in this order; and forming a convex portion on at least a portion of a surface of at least one layer among a plurality of layers included in the stacked structure.

[21] An electronic device comprising the photodetector according to

[19] .

[22] A photodetection system comprising the photodetector according to

[19] .

[0205] REFERENCE SIGNS LIST 11 First electrode 12 Second electrode 13 Photoelectric conversion layer 14 N-type buffer layer 15 P-type buffer layer 16 Convex portion 17 Stacked structure 18 Wall portion 19 Light-shielding portion 20 Reflecting portion 21 Logic circuit 70 Substrate 82 Protective layer 90 On-chip lens 1, 100 Photodetector 101 Electronic device 1000 Electronic device 2000 Photodetection system 2001 Light-emitting device 2002 Photodetector 2003 System control unit 2004 Light source driving unit 2005 Sensor control unit 2006 Light source side optical system 2007 Camera side optical system

Claims

1. A semiconductor device having a first electrode, a second electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, wherein convex portions are disposed on at least a part of the surface of at least one layer among the plurality of layers included in the laminated structure including the first electrode, the second electrode, and the photoelectric conversion layer.

2. The semiconductor device according to claim 1, wherein the convex portion is disposed between the photoelectric conversion layer and the first electrode.

3. The semiconductor device according to claim 1, wherein the convex portion is disposed between the second electrode and the photoelectric conversion layer.

4. The semiconductor device according to claim 1, wherein the convex portions are disposed between the second electrode and the photoelectric conversion layer and between the photoelectric conversion layer and the first electrode.

5. The semiconductor device according to claim 1, wherein the convex portion is disposed near the center within the surface on which it is disposed.

6. The semiconductor device according to claim 1, wherein the height of the convex portion is smaller than the thickness of the photoelectric conversion layer.

7. The semiconductor device according to claim 1, wherein the height of the convex portion varies according to the distance from near the center within the surface.

8. The semiconductor device according to claim 1, wherein the convex portion has a conical shape, a cylindrical shape, or a spherical shape.

9. The semiconductor device according to claim 1, wherein a plurality of the convex portions are disposed within one surface.

10. The semiconductor device according to claim 9, wherein the respective convex portions are disposed at equal intervals.

11. The semiconductor device according to claim 9, wherein convex portions of two or more shapes are disposed.

12. The semiconductor device according to claim 9, wherein the respective convex portions are randomly disposed without regularity.

13. The semiconductor device according to claim 1, wherein a wall portion is disposed between adjacent laminated structures.

14. The semiconductor device according to claim 13, wherein the wall portion contains a material having a refractive index different from that of the photoelectric conversion layer.

15. The semiconductor device according to claim 1, wherein a light-shielding portion is disposed between adjacent laminated structures.

16. The semiconductor device according to claim 1, wherein a reflection portion is disposed between adjacent laminated structures.

17. The semiconductor device according to claim 1, wherein a plurality of the laminated structures are arranged in a matrix.

18. The semiconductor device according to claim 17, comprising the laminated structure having the convex portion and the laminated structure not having the convex portion.

19. A photodetector comprising a semiconductor element, wherein the semiconductor element has a first electrode, a second electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and convex portions are disposed on at least a part of a surface of at least one layer among a plurality of layers included in a laminated structure including the first electrode, the second electrode, and the photoelectric conversion layer.

20. A method for manufacturing a semiconductor element, the method including: forming a laminated structure in which a second electrode, a photoelectric conversion layer, and a first electrode are laminated in this order; and forming convex portions on at least a part of a surface of at least one layer among a plurality of layers included in the laminated structure.

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