Mounting device

Abstract

Provided is a mounting device which is capable of suppressing temperature unevenness caused when an integrated package having a non-uniform thermal conductivity is heated and thereby suppressing a faulty connection of the integrated package to a board. Specifically, the mounting device has: a stage 10 on which at least one from among an integrated package β and a board α is mounted; a pressing unit 23 for pressing the board α and the integrated package β; at least one heater from among a first heater 12 and a second heater 26 for heating the board α and the integrated package β; at least one attachment from among a first attachment 13 and a second attachment 26 which contacts either the board α or the integrated package β. The first attachment 13 and the second attachment 26 have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated packageβ in the moving direction of the pressing unit 23.

Description

Mounting Equipment

[0001] The present invention relates to a mounting apparatus for mounting an integrated package on a substrate.

[0002] A mounting apparatus for mounting a semiconductor chip on a substrate is known. The mounting apparatus places the semiconductor chip at a predetermined position on a stage substrate, and connects the semiconductor chip to the substrate by pressing the semiconductor chip against the substrate while melting the bumps on the semiconductor chip with heat.

[0003] In such a mounting device, if the temperature distribution of the heated semiconductor chip is uneven when connecting the semiconductor chip to the substrate, the bumps on the semiconductor chip will have uneven melting states. As a result, the semiconductor chip may not function properly due to poor connection to the substrate or uneven gaps between the semiconductor chip and the substrate. Therefore, mounting devices that suppress poor connection between the substrate and the semiconductor chip, uneven gaps between the substrate and the semiconductor chip, etc. are known.

[0004] The mounting apparatus (semiconductor manufacturing apparatus) described in Patent Document 1 includes a bonding head that mounts the semiconductor chip on the substrate, an attachment that is attached to the bonding head and that sucks the semiconductor chip, and a heating unit that heats the attachment. The heating unit has a first heating area and a second heating area that horizontally surrounds the first heating area. The mounting apparatus achieves a uniform temperature distribution of the semiconductor chip by independently controlling the temperatures of the first heating area and the second heating area.

[0005] International Publication No. 2021 / 100591

[0006] The mounting device described in Patent Document 1 achieves uniform temperature distribution of the semiconductor chip by setting the heating temperature of the second heating area, which heats the peripheral portion of the semiconductor chip, where the temperature is more likely to drop due to heat dissipation than the central portion of the semiconductor chip, higher than the heating temperature of the first heating area, which heats the central portion of the semiconductor chip. However, in an integrated package in which multiple different semiconductor chips are molded with resin, the integrated portion of the semiconductor chip, which has high thermal conductivity, and the resin portion, which has lower thermal conductivity than the integrated portion of the semiconductor chip, are unevenly located within the integrated package. In other words, the integrated package has a more complex thermal conductivity distribution than a single semiconductor chip. Therefore, the mounting device described in Patent Document 1 sometimes has difficulty achieving uniform heating to prevent poor connection between the substrate and the integrated package, uneven gaps between the substrate and the integrated package, etc.

[0007] An object of the present invention is to provide a mounting device that can suppress temperature variations when an integrated package having non-uniform thermal conductivity is heated, and can suppress poor connection of the integrated package to a substrate.

[0008] The present inventors have studied the configuration of a mounting device that can suppress temperature variations when an integrated package with non-uniform thermal conductivity is heated and can suppress poor connection of the integrated package to a substrate. As a result of extensive research, the present inventors have come up with the following configuration.

[0009] An implementation of the present invention provides a mounting device comprising: a stage on which at least one of an integrated package in which multiple semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted; a pressing unit arranged opposite the stage and moving relatively toward the stage to press the substrate and the integrated package; at least one of a first heating unit supported by the stage and heating the substrate and the integrated package, and a second heating unit supported by the pressing unit and heating the substrate and the integrated package; and at least one of a first attachment supported by the stage and contacting either the substrate or the integrated package from the direction of movement of the pressing unit, and a second attachment supported by the pressing unit and contacting the other of the substrate or the integrated package from the direction of movement of the pressing unit.

[0010] The first attachment and the second attachment have a distribution of pressure-direction thermal conductivity based on a distribution of pressure-direction thermal conductivity, which is the thermal conductivity of the integrated package in the pressure direction of the pressing portion.

[0011] In the above-described configuration, the first attachment and the second attachment have a pressure-direction thermal conductivity based on the distribution of the pressure-direction thermal conductivity of the integrated package. The first attachment and the second attachment are configured, for example, so that the pressure-direction thermal conductivity of a portion of the integrated package that contacts a portion having a lower pressure-direction thermal conductivity than the other portions is higher than that of the other portions. Furthermore, the first attachment and the second attachment are configured, for example, so that the pressure-direction thermal conductivity of a portion of the integrated package that contacts a portion having a higher pressure-direction thermal conductivity than the other portions is lower than that of the other portions. Thus, the first attachment and the second attachment distribute heat from the heating unit to each portion of the integrated package according to the distribution of the pressure-direction thermal conductivity of the integrated package. In this way, the mounting device adjusts at least one of the ease of heat transfer to and the ease of heat escape from the integrated package by using the first attachment and the second attachment. This makes it possible to suppress variations in temperature when an integrated package having non-uniform thermal conductivity is uniformly heated, and to suppress poor connection of the integrated package to the substrate.

[0012] From another viewpoint, the mounting device of the present invention preferably includes the following configuration: the first attachment and the second attachment are configured, when in contact with the substrate, so that, as viewed in the pressing direction, the pressing-direction thermal conductivity of a portion of the integrated package overlapping with the portion of the integrated package having the highest pressing-direction thermal conductivity becomes highest, and the pressing-direction thermal conductivity of a portion of the integrated package overlapping with the portion of the integrated package having the lowest pressing-direction thermal conductivity becomes lowest; and the pressing-direction thermal conductivity of a portion of the integrated package overlapping with the portion of the integrated package having the lowest pressing-direction thermal conductivity becomes highest, as viewed in the pressing direction.

[0013] In the above-described configuration, when the first attachment and the second attachment contact the substrate, the pressing-direction thermal conductivity of the portions overlapping with the portions of the integrated package having a higher pressing-direction thermal conductivity than the other portions is made higher than that of the other portions, thereby conducting a melting amount of heat to the bumps located in the portions of the integrated package having a higher pressing-direction thermal conductivity than the other portions. Also, by making the pressing-direction thermal conductivity of the first attachment and the second attachment lower than that of the other portions in the portions overlapping with the portions of the integrated package having a lower pressing-direction thermal conductivity than the other portions, heat is less likely to accumulate in the portions of the integrated package having a lower pressing-direction thermal conductivity than the other portions, thereby suppressing the temperature of the integrated package within an allowable temperature range.

[0014] When the first attachment and the second attachment contact the integrated package, the pressure-direction thermal conductivity of the portions of the integrated package overlapping with portions having a higher pressure-direction thermal conductivity than the other portions is lower than that of the other portions, thereby preventing heat conducted to the portions of the integrated package having a higher pressure-direction thermal conductivity from being conducted to the outside via the attachment. Furthermore, the first attachment and the second attachment increase the pressure-direction thermal conductivity of the portions of the integrated package overlapping with portions having a lower pressure-direction thermal conductivity than the other portions, thereby facilitating the dissipation of a portion of the heat stored in the portions of the integrated package having a lower pressure-direction thermal conductivity than the other portions. This allows the temperature of the integrated package to be kept within an allowable temperature range. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is heated, thereby preventing poor connection of the integrated package to a substrate.

[0015] From another perspective, the mounting device of the present invention preferably includes the following configuration: the first attachment changes the pressing direction thermal conductivity at a portion overlapping with the integrated package as viewed in the pressing direction by changing at least one of a ratio of a contact area with the substrate or the integrated package per unit area at the arbitrary position and a ratio of a contact area with the first heating unit per unit area at the arbitrary position; and the second attachment changes the pressing direction thermal conductivity at a portion overlapping with the integrated package as viewed in the pressing direction by changing at least one of a ratio of a contact area with the substrate or the integrated package per unit area at the arbitrary position and a ratio of a contact area with the second heating unit per unit area at the arbitrary position.

[0016] In the above-described configuration, the first attachment and the second attachment can arbitrarily change the pressure direction thermal conductivity between the first attachment and the second attachment and at least one of the substrate, the integrated package, and the heating unit by changing the ratio of the contact area per unit area with at least one of the substrate, the integrated package, and the heating unit. The pressure direction thermal conductivity of the first attachment and the second attachment decreases in proportion to the ratio of the contact area per unit area with at least one of the substrate, the integrated package, and the heating unit. The first attachment and the second attachment distribute the heat from the heating unit to each part of the substrate and the integrated package by arbitrarily changing the pressure direction thermal conductivity based on the pressure direction thermal conductivity of the integrated package. This reduces temperature variations when heating an integrated package with non-uniform thermal conductivity, and prevents poor connection of the integrated package to the substrate.

[0017] From another viewpoint, the mounting device of the present invention preferably includes the following configuration: the first attachment, in a portion overlapping with the integrated package as viewed in the pressing direction, changes at least one of a surface treatment of a contact portion with the substrate or the integrated package at the arbitrary position and a surface treatment of a contact portion with the first heating unit at the arbitrary position, thereby changing the pressing direction thermal conductivity at the arbitrary position; and the second attachment, in a portion overlapping with the integrated package as viewed in the pressing direction, changes at least one of a surface treatment of a contact portion with the substrate or the integrated package at the arbitrary position and a surface treatment of a contact portion with the second heating unit at the arbitrary position, thereby changing the pressing direction thermal conductivity at the arbitrary position.

[0018] In the above-described configuration, the first and second attachments can arbitrarily change the pressure direction thermal conductivity between the first and second attachments and at least one of the substrate, the integrated package, and the heating unit by changing the surface treatment of the portions that contact at least one of the substrate, the integrated package, and the heating unit. The pressure direction thermal conductivity of the first and second attachments varies depending on the surface roughness, surface treatment, etc. of the contact surfaces. The first and second attachments arbitrarily change the pressure direction thermal conductivity based on the pressure direction thermal conductivity of the integrated package, thereby distributing heat from the heating unit to each portion of the substrate and the integrated package. This reduces temperature variations when heating an integrated package with non-uniform thermal conductivity, and prevents poor connection of the integrated package to the substrate.

[0019] From another perspective, the mounting device of the present invention preferably includes the following configuration: the first attachment, in a portion overlapping with the integrated package as viewed in the pressing direction, changes at least one of a material of a contact portion with the substrate or the integrated package at an arbitrary position and a material of a contact portion with the first heating unit at an arbitrary position, thereby changing the pressing direction thermal conductivity at the arbitrary position; and the second attachment, in a portion overlapping with the integrated package as viewed in the pressing direction, changes at least one of a material of a contact portion with the substrate or the integrated package at an arbitrary position and a material of a contact portion with the second heating unit at an arbitrary position, thereby changing the pressing direction thermal conductivity at the arbitrary position.

[0020] In the above-described configuration, the first attachment and the second attachment have portions that contact at least one of the substrate, the integrated package, and the heating unit made of materials with different thermal conductivities, thereby allowing the pressure-direction thermal conductivity of the portions of the first attachment and the second attachment that contact at least one of the substrate, the integrated package, and the heating unit to be freely changed. The first attachment and the second attachment distribute the heat from the heating unit to each portion of the substrate and the integrated package by freely changing the pressure-direction thermal conductivity based on the pressure-direction thermal conductivity of the integrated package. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is heated, and prevents poor connection of the integrated package to the substrate.

[0021] From another perspective, the mounting apparatus of the present invention preferably includes the following configuration: The mounting apparatus includes a first heating unit, a second heating unit, a first attachment, and a second attachment. The stage supports the first heating unit and the first attachment. The first heating unit heats the substrate via the first attachment. The pressing unit supports the second heating unit and the second attachment. The second heating unit heats the integrated package via the second attachment.

[0022] In the above configuration, the mounting device conducts heat from the first heating unit to the substrate via the first attachment and conducts heat from the second heating unit to the integrated package via the second attachment. The mounting device distributes the heat from the first heating unit and the second heating unit to the substrate and the integrated package based on the manner in which heat is conducted by heating the substrate and the integrated package and the manner in which heat is conducted by heat radiation. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is heated, and can prevent poor connection of the integrated package to the substrate.

[0023] From another viewpoint, it is preferable that the mounting device of the present invention includes the following configuration: the heating unit has a plurality of heating regions whose temperatures can be independently controlled, and the heating unit is configured to be able to change the temperatures of the plurality of heating regions based on the distribution of the thermal conductivity in the pressing direction of the integrated package.

[0024] In the above configuration, the mounting device adjusts the temperatures of the substrate and the integrated package by distributing the heat from the heating unit using the attachment and by changing the heating temperature of the heating unit based on the thermal conductivity of the integrated package in the pressing direction, thereby suppressing temperature variations when an integrated package with non-uniform thermal conductivity is heated and preventing poor connection of the integrated package to the substrate.

[0025] The terminology used herein is for the purpose of defining particular embodiments only and is not intended to limit the invention.

[0026] In this specification, the use of "including," "comprising," or "having" and variations thereof identify the presence of stated features, steps, operations, elements, components, and / or equivalents thereof, but may include one or more of the steps, operations, elements, components, and / or groups thereof.

[0027] As used herein, the terms "attached," "connected," "coupled," and / or their equivalents are used broadly to encompass both "direct and indirect" attachments, connections, and couplings. Furthermore, "connected" and "coupled" are not limited to physical or mechanical connections or couplings, but can also include direct or indirect electrical connections or couplings.

[0028] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0029] [Integrated Package] In this specification, the term "integrated package" refers to a single package in which multiple semiconductor chips are integrated and molded on a package substrate. The integrated package includes a 2.5D integrated package in which two or more active semiconductor chips are arranged side by side on a silicon interposer (or organic interposer) with wiring processed on a silicon substrate, and a 3D integrated package in which two or more active semiconductor chips are integrated by die stacking. The integrated package is a package in which an integrated circuit configured by heterogeneous integration is resin-molded. Note that multiple semiconductor chips may also be connected by a silicon bridge on the package substrate. In the following embodiments, the integrated package may have any structure as long as it is a single package in which multiple semiconductor chips are integrated and molded.

[0030] [Substrate] In this specification, the term "substrate" refers to a substrate on which an integrated package is mounted, and which is made of a material such as silicon, ceramics, or resin and has a patterned wiring board. The substrate has conductive wiring. The integrated circuit and the resin substrate are connected by welding bumps, which are protruding connection electrodes.

[0031] [Pressure-Direction Thermal Conductivity of Integrated Package] In this specification, the pressure-direction thermal conductivity of an integrated package refers to the stacking direction of the semiconductor chips and silicon interposers in the integrated package, and refers to the average thermal conductivity per unit area in the pressing direction of the pressing part of the mounting device. Because multiple silicon semiconductor chips are unevenly integrated, the pressure-direction thermal conductivity of the integrated package differs between the stacked semiconductor chips and the silicon interposer-only portion when viewed in the pressure direction. Therefore, the pressure-direction thermal conductivity of the integrated package is unevenly distributed when viewed in the pressure direction based on the shape and stacking direction of the semiconductor chips in the integrated package. In the following embodiments, the distribution of the pressure-direction thermal conductivity of the integrated package is determined in advance through experiments, analysis, etc.

[0032] [Distribution of Thermal Conductivity in the Pressing Direction] In the following embodiments, the distribution of thermal conductivity in the pressing direction refers to the position, size, and range of a region where the thermal conductivity in the pressing direction falls within a certain range, and is defined as a region having a thermal conductivity in the pressing direction that is the average value of the certain range. In the following embodiments, the entire region of the integrated package as viewed from the pressing direction has multiple regions with thermal conductivities in the pressing direction that are different average values ​​within a certain range. In the integrated package of this embodiment, multiple regions with thermal conductivities in the pressing direction that are different average values ​​within a certain range are distributed in the region of the integrated package as viewed in the pressing direction, based on the structure of the integrated package in the pressing direction.

[0033] [Pressing Direction] In the following embodiments, the pressing direction refers not only to the direction in which the pressing portion presses the integrated package, but also to the direction of the reaction force of the force applied to the integrated package by the pressing portion. Note that in the following embodiments, the pressing direction refers to the mounting direction of the integrated package mounted on the substrate.

[0034] According to one embodiment of the present invention, the mounting device uses an attachment having a distribution of pressing direction thermal conductivity based on the distribution of pressing direction thermal conductivity, which is the thermal conductivity of the integrated package in the direction of movement of the pressing part, to uniformly heat an integrated package with uneven thermal conductivity and suppress poor connections.

[0035] FIG. 1 is a diagram illustrating the overall configuration of a mounting device according to a first embodiment of the present invention, a mounting device according to a first modification of the first embodiment, and a mounting device according to a second modification of the first embodiment. FIG. 2 is a control block diagram of the mounting device according to the first embodiment of the present invention, a mounting device according to a first modification of the first embodiment, and a mounting device according to a second modification of the first embodiment. FIG. 3 is a plan view of an integrated package mounted on a substrate by the mounting device of the present invention. FIG. 4 is a cross-sectional view taken along the arrows IV-IV in FIG. 3. FIG. 5 is a plan view of a first attachment according to the first embodiment of the present invention. FIG. 6 is a cross-sectional view taken along the arrows VI-VI in FIG. 5. FIG. 7 is a plan view of a second attachment according to the first embodiment. FIG. 8 is a cross-sectional view taken along the arrows VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view of the mounting device according to the first embodiment of the present invention, in a state in which a substrate and an integrated package are held by the mounting device. FIG. 10 is a cross-sectional view of the mounting device according to the first embodiment of the present invention, in a state in which the integrated package has been placed on a substrate by the mounting device. FIG. 11 is a plan view of a first attachment according to a first modification of the first embodiment of the present invention, and a cross-sectional view taken along the arrows X-X in the plan view. Fig. 12 is a plan view of a second attachment according to Modification 1 of Embodiment 1 of the present invention, and a cross-sectional view taken along the line XII-XII in the plan view. Fig. 13 is a plan view of a first attachment according to Modification 2 of Embodiment 1 of the present invention, and a cross-sectional view taken along the line XIII-XIII in the plan view. Fig. 14 is a plan view of a second attachment according to Modification 2 of Embodiment 1 of the present invention, and a cross-sectional view taken along the line XIV-XIV in the plan view. Fig. 15 is an overall configuration diagram of a mounting device according to Embodiment 2 of the present invention. Fig. 16 is a cross-sectional view of a state in which a substrate and an integrated package are held by the mounting device according to Embodiment 2 of the present invention. Fig. 17 is a cross-sectional view of a first heater and a first attachment according to another embodiment of the present invention.

[0036] The mounting device according to the present invention will be described below with reference to the drawings. In each drawing, the same parts are designated by the same reference numerals, and the description of those parts will not be repeated. The dimensions of the components in each drawing do not faithfully represent the actual dimensions of the components and the dimensional ratios of the components. In the following description of the embodiments of the present invention, the X and Y directions are assumed to be directions on a horizontal plane. The Y direction is a direction perpendicular to the X direction. The Z direction is a direction perpendicular to the X and Y directions. In this embodiment, the Z direction is defined as the vertical direction. However, this definition of the directions is not intended to limit the orientation of the positioning device in each embodiment when in use.

[0037] Furthermore, in the following description, expressions such as "fix," "connect," "join," and "attach" (hereinafter referred to as "fixing") include not only cases where members are directly fixed to each other, but also cases where members are fixed via other members. In other words, in the following description, expressions such as "fixing" include both direct and indirect fixing of members to each other.

[0038] [Embodiment 1] <Configuration of Mounting Apparatus 1> A mounting apparatus 1 according to Embodiment 1 of the present invention will be described with reference to Figures 1 and 2. Figure 1 is an overall configuration diagram of the mounting apparatus 1 according to Embodiment 1 of the present invention, a mounting apparatus 1A according to Modification 1 of Embodiment 1, and a mounting apparatus 1B according to Modification 2 of Embodiment 1. Figure 2 is a control block diagram of the mounting apparatus 1, the mounting apparatus 1A, and the mounting apparatus 1B.

[0039] 1 and 2 , a mounting apparatus 1 mounts an integrated package β on a substrate α. The mounting apparatus 1 is provided in a manufacturing apparatus such as a semiconductor manufacturing apparatus (not shown). The mounting apparatus 1 has a stage unit 10, a pickup unit 20, and a control device 30.

[0040] The stage unit 10 is a movable stage that positions the substrate α at any position on the XY plane. The stage unit 10 is supported by a frame (not shown). The stage unit 10 is disposed with its stage mounting surface 10a facing in the Z direction. The stage unit 10 has a stage driving device 11. The stage unit 10 is configured so that the stage mounting surface 10a can be moved to any position on the XY plane by the stage driving device 11. The stage unit 10 supports a first heater 12 and a first attachment 13, which are first heating sections.

[0041] The first heater 12, which is the first heating unit, heats the substrate α via the first attachment 13. The first heater 12 is, for example, a pulse heater having a ceramic housing. The first heater 12 includes a laser heating type heater that heats with a laser. The first heater 12 is configured to be able to rapidly heat up to a preset first temperature. The first heater 12 is fixed to the stage mounting surface 10a of the stage unit 10. The first heater 12 is arranged with its heating surface facing the Z direction. The first heater 12 is configured to be movable integrally with the stage unit 10. The amount of heat transfer per unit area on the heating surface of the first heater 12 is equal at all positions. In other words, the first heater 12 heats the entire heating surface equally.

[0042] The first attachment 13 holds the substrate α. The first attachment 13 is configured, for example, as a rectangular parallelepiped made of metal. The first attachment 13 is detachably fixed to the heating surface of the first heater 12. The first attachment 13 is disposed with its first attachment holding surface 13a, which holds the substrate α, facing the Z direction. The first attachment 13 has a plurality of suction holes (not shown) in the first attachment holding surface 13a. The first attachment 13 is configured so that the suction holes can be sucked by a suction device (not shown). The first attachment 13 is configured so that the substrate α can be sucked and held on the first attachment holding surface 13a by suction force generated in the suction holes. The first attachment 13 is configured so that it can move integrally with the first heater 12 by the stage unit 10. The first attachment 13 is heated by the first heater 12.

[0043] The pickup unit 20 is a unit that positions the integrated package β at any position on the XY plane. The pickup unit 20 is supported by a frame (not shown). The pickup unit 20 is disposed with its pickup unit mounting surface 20a facing the first attachment 13. The pickup unit 20 has a pickup unit drive device 21. The pickup unit 20 is configured to be movable to any position on the XY plane by the pickup unit drive device 21. The pickup unit 20 is provided with a camera 22 that measures the positions of the substrate α and the integrated package β. The pickup unit 20 supports a pressing unit 23 and a second attachment 25.

[0044] The pressing unit 23, which is a pressing section, is a unit that moves the integrated package β in the Z direction. The pressing unit 23 is fixed to the pickup unit mounting surface 20a. The pressing unit 23 is disposed so that the pressing unit mounting surface 23a faces the first attachment 13. The pressing unit 23 is configured so that the pressing unit mounting surface 23a can be moved to any position in the Z direction by a pressing unit drive device 24. The pressing unit 23 is also configured so that the pressing unit mounting surface 23a can be pressed against an object with a predetermined force by the pressing unit drive device 24. The pressing unit 23 is also configured so that it can move integrally with the pickup unit 20. In other words, the pressing unit 23 is configured so that it can place the integrated package β at any position on the substrate α and press it.

[0045] The second attachment 25 holds the accumulated package β. The second attachment 25 is configured as a rectangular parallelepiped made of, for example, an inorganic material such as ceramics or a metal. The second attachment 25 is detachably fixed to the mounting surface of the pressing unit 23. The second attachment 25 is disposed with its second attachment holding surface 25a, which holds the accumulated package β, facing the first attachment 13. The second attachment 25 has suction holes (not shown) in the second attachment holding surface. The second attachment 25 is configured so that the suction holes can be sucked by a suction device (not shown). The second attachment 25 is configured so that the accumulated package β can be sucked and held on the second attachment holding surface 25a by the suction force generated in the suction holes. The second attachment 25 is configured so that it can move integrally with the pickup unit 20 and the pressing unit 23.

[0046] 2, the control device 30 controls the stage driving device 11, the first heater 12, the pickup unit driving device 21, the camera 22, the pressing unit driving device 24, and a suction pump (not shown). The control device 30 essentially includes a CPU, ROM, RAM, HDD, etc. connected via a bus. Alternatively, the control device 30 may be configured as a one-chip LSI, etc. The control device 30 stores various programs and data for controlling the operations of the stage driving device 11, the first heater 12, the pickup unit driving device 21, the pressing unit driving device 24, and the suction pump (not shown).

[0047] The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the stage driving device 11. The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction actuator of the pressing unit driving device 24. The control device 30 is electrically connected to the camera 22. The control device 30 is electrically connected to the first heater 12.

[0048] The control device 30 is also electrically connected to the camera 22. The control device 30 is electrically connected to the X-direction scale and the Y-direction scale included in the stage driving device 11 and the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction scale included in the pressing unit driving device 24.

[0049] The control device 30 is configured to be able to output a position control signal to the stage drive device 11 for positioning the first attachment 13 (see FIG. 1) mounted on the stage unit 10 at a target position. The control device 30 is configured to be able to output a position control signal to the pickup unit drive device 21 and the press unit drive device 24 for positioning the second attachment 25 mounted on the press unit 23 at a target position. The control device 30 is configured to be able to output a temperature control signal to the first heater 12 for raising the temperature to a first temperature. The control device 30 is configured to be able to output a control signal to the camera 22 for capturing images of the substrate α and the integrated package β. The control device 30 is configured to be able to output a suction control signal to a suction pump (not shown).

[0050] The control device 30 can acquire the X and Y coordinates of the substrate α and the integrated package β using the camera 22. The control device 30 can acquire the X and Y coordinates of the first attachment 13 and the second attachment 25 using the X-direction scale and the Y-direction scale. The control device 30 can acquire the Z coordinate of the second attachment 25 using the Z-direction scale.

[0051] The mounting device 1 configured as described above holds the substrate α by suction when the substrate α is loaded onto the first attachment 13 of the stage unit 10 from an external transport device. The mounting device 1 holds the integrated package β by suction using the second attachment of the pickup unit 20. While checking the position of the substrate α using the camera 22, the mounting device 1 adjusts the position of the substrate α in the X and Y directions using the stage driver 11, and adjusts the position of the integrated package β in the X and Y directions using the pickup unit driver 21. The mounting device 1 adjusts the position of the integrated package β in the Z direction using the pressing unit driver 24, and places the integrated package β at a predetermined position on the substrate α.

[0052] The mounting device 1 presses the integrated package β, which is placed at a predetermined position on the substrate α, toward the substrate α using the pressing unit driving device 24. At the same time, the mounting device 1 heats the substrate α via the first attachment 13 using the first heater 12. The heat transferred to the substrate α via the first attachment 13 melts the bumps β6 (see FIG. 4 ) of the integrated package β. In this way, the mounting device 1 connects the integrated package β to the predetermined position on the substrate α.

[0053] <Structure of Integrated Package and Thermal Conductivity in the Pressing Direction> Next, the structure and thermal conductivity in the pressing direction of the integrated package β will be described with reference to Figures 3 and 4. Figure 3 is a plan view of the integrated package β mounted on a substrate by the mounting apparatuses 1, 1A, 1C, and 1D. Figure 4 is a cross-sectional view taken along the line IV-IV in Figure 3.

[0054] 3 and 4, the integrated package β is an integrated package in which a first semiconductor chip β3 and a second semiconductor chip β4 are connected to a resin package substrate β1 (see FIG. 4) via a silicon interposer β2 (see FIG. 4). The integrated package β is molded with resin β5. The surfaces of the first semiconductor chip β3 and the second semiconductor chip β4 opposite the silicon interposer β2 are not covered with resin β5. The package substrate β1 has bumps β6 including electrodes.

[0055] As shown in Figure 3, the integrated package β has an area Aβ1 where a package substrate β1 (see Figure 4), a silicon interposer β2 (see Figure 4), and a first semiconductor chip β3 are stacked, an area Aβ2 where a package substrate β1, a silicon interposer β2, and a second semiconductor chip β4 are stacked, and an area Aβ3 (shaded area) where a package substrate β1, a silicon interposer β2, and a resin β5 are stacked.

[0056] As shown in FIG. 4 , the pressure direction thermal conductivity Tβ1 of region Aβ1 is the highest in the integrated package β. In other words, region Aβ1 is the region that transfers heat most easily. When heat is transferred from the second heater 26 located on the pressing unit 23 side to region Aβ1, the heat from the second heater 26 is most easily transferred to the bump β6 located in region Aβ1 via region Aβ1. Therefore, the bump β6 located in region Aβ1 is most easily heated by the heat transferred from region Aβ1. Furthermore, when heat is transferred from the first heater 12 located on the stage unit 10 side to the bump β6 located in region Aβ1, the heat from the first heater 12 is most easily transferred to region Aβ1 via the bump β6. Therefore, the bump β6 located in region Aβ1 is least easily heated because heat escapes to the outside via region Aβ1.

[0057] The thermal conductivity Tβ2 in the pressing direction of the region Aβ2 is the second highest in the integrated package β after the region Aβ1.

[0058] The pressure direction thermal conductivity Tβ3 of region Aβ3 is the lowest in the integrated package β. In other words, region Aβ3 is the region that conducts heat least easily. When heat is conducted from the second heater 26 located on the pressing unit 23 side to region Aβ3, the heat from the second heater 26 is conducted least easily to the bump β6 located in region Aβ3 via region Aβ3. Therefore, the bump β6 located in region Aβ3 is least likely to be heated by the heat conducted from region Aβ3. Furthermore, when heat is conducted from the first heater 12 located on the stage unit 10 side to the bump β6 located in region Aβ3, the heat from the first heater 12 is conducted least easily to region Aβ3 via the bump β6. Therefore, the bump β6 located in region Aβ3 is most likely to be heated because heat is least likely to escape to the outside via region Aβ3.

[0059] <Pressing Direction Thermal Conductivity of First Attachment and Second Attachment> Next, the pressing direction thermal conductivity of the first attachment 13 and the second attachment 25 will be described with reference to Figs. 5 to 8. Fig. 5 is a plan view of the first attachment 13. Fig. 6 is a cross-sectional view taken along the line VI-VI in Fig. 5. Fig. 7 is a plan view of the second attachment 25. Fig. 8 is a cross-sectional view taken along the line VIII-VIII in Fig. 7. In the following description, it is assumed that an integrated package β is disposed at a predetermined position on the substrate α.

[0060] 5 and 6 , the first attachment 13 has a shape that, when the substrate α is held in a predetermined position, supports at least a portion of the area that overlaps with the integrated package β placed on the substrate α, as viewed in the pressing direction of the pressing unit 23. The first attachment 13 also supports an area of ​​the substrate α that can withstand the force applied to the integrated package β by the pressing unit 23.

[0061] The first attachment 13 is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat from the first heater 12 transferred to the substrate α via the first attachment 13 is proportional to the contact area between the first attachment 13 and the substrate α. Therefore, the amount of heat from the first heater 12 transferred to the substrate α via the first attachment 13 varies based on the ratio of the contact area with the substrate α per unit area at any position of the first attachment 13. In other words, the pressing direction thermal conductivity of the first attachment 13, which indicates the ease of heat transfer when the heat from the first heater 12 is transferred to the substrate α via the first attachment 13, can be set to any value by changing the ratio of the contact area with the substrate α per unit area at any position of the first attachment 13.

[0062] The ratio of the contact area per unit area of ​​the first attachment 13 with the substrate α can be reduced by providing, for example, a grid-like groove 13c in region A1, which is the surface of the first attachment 13 that contacts the substrate α while holding the substrate α in a predetermined position. When viewed in the pressing direction, region A1 includes region A11 that overlaps with region Aβ1 of the integrated package β, region A12 that overlaps with region Aβ2, and region A13 that overlaps with region Aβ3 (see FIGS. 3 and 4). Region A13 is region A1 minus regions A11 and A12.

[0063] Region A11 is configured so that the proportion of the contact area with the substrate α per unit area is larger than those of regions A12 and A13. In other words, the proportion of grooves 13c in region A11 is smaller than those of regions A12 and A13. Region A12 is configured so that the proportion of the contact area with the substrate α per unit area is larger than those of region A13. In other words, the proportion of grooves 13c in region A12 is smaller than those of region A13. Region A13 is configured so that the proportion of the contact area with the substrate α per unit area is smaller than those of regions A11 and A12. In other words, the proportion of grooves 13c in region A13 is larger than those of regions A12 and A13.

[0064] 6, region A11 has a higher pressing direction thermal conductivity T11 than regions A12 and A13. Region A12 has a higher pressing direction thermal conductivity T12 than region A13. Region A13 has a lower pressing direction thermal conductivity T13 than regions A11 and A12.

[0065] That is, the pressing direction thermal conductivity T11 of the region A11, which overlaps with the region Aβ1 (see FIG. 3 ), which has the highest pressing direction thermal conductivity in the integrated package β, is higher than the pressing direction thermal conductivity T12 of the region A12 and the pressing direction thermal conductivity T13 of the region A13. The pressing direction thermal conductivity T12 of the region A12, which overlaps with the region Aβ2 (see FIG. 3 ), which has a higher pressing direction thermal conductivity than the region Aβ3 (see FIG. 3 ), is higher than the pressing direction thermal conductivity T13 of the region A13. Therefore, the heat from the first heater 12 is more easily transferred to the region A11 than to the regions A12 and A13. The heat from the first heater 12 is more easily transferred to the region A12 than to the region A13. The heat from the first heater 12 is less easily transferred to the region A13 than to the regions A11 and A12. In this way, the first attachment 13 has a pressure direction thermal conductivity based on the distribution of the pressure direction thermal conductivity of the integrated package β when viewed in the pressure direction.

[0066] 7 and 8, the second attachment 25 has a shape that supports at least a part of the area that overlaps with the accumulated package β when viewed in the pressing direction of the pressing unit 23. The second attachment 25 also supports an area of ​​the accumulated package β that can withstand the force applied to the accumulated package β by the pressing unit 23.

[0067] The second attachment 25 is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat from the first heater 12 transferred from the integrated package β to the second attachment 25 is proportional to the contact area between the second attachment 25 and the integrated package β. Therefore, the amount of heat from the first heater 12 transferred from the integrated package β to the second attachment 25 varies based on the ratio of the contact area with the integrated package β per unit area at any position on the second attachment 25. In other words, the pressing direction thermal conductivity of the second attachment 25, which indicates the ease of heat transfer when the heat from the first heater 12 is transferred from the integrated package β to the second attachment 25, can be set to any value by changing the ratio of the contact area with the integrated package β per unit area at any position on the second attachment 25.

[0068] In the second attachment 25, region A2, which is the surface that contacts the integrated package β arranged at a predetermined position on the substrate α, includes, when viewed in the pressing direction, region A21 that overlaps with region Aβ1 of the integrated package β, region A22 that overlaps with region Aβ2, and region A33 that overlaps with region Aβ3 (see Figures 3 and 4).

[0069] Region A21 is configured with grid-like grooves 25c so that the proportion of the contact area with the integrated package β per unit area is smaller than regions A22 and A23. Region A22 is configured with grooves 25c so that the proportion of the contact area with the integrated package β per unit area is smaller than region A23. Region A23 is configured with grooves 25c so that the proportion of the contact area with the integrated package β per unit area is larger than regions A21 and A22.

[0070] Therefore, the region A21 has a lower pressing direction thermal conductivity T21 than the regions A22 and A23. The region A22 has a lower pressing direction thermal conductivity T22 than the region A23. The region A23 has a higher pressing direction thermal conductivity T23 than the regions A21 and A22.

[0071] That is, the pressing direction thermal conductivity T21 of the region A21 overlapping with the region Aβ1 (see FIG. 3 ), which has the highest pressing direction thermal conductivity in the integrated package β, is lower than the pressing direction thermal conductivity T22 of the region A22 and the pressing direction thermal conductivity T23 of the region A23. The pressing direction thermal conductivity T22 of the region A22 overlapping with the region Aβ2 (see FIG. 3 ), which has a higher pressing direction thermal conductivity than the region Aβ3 (see FIG. 3 ), is lower than the pressing direction thermal conductivity T23 of the region A23. In this way, the second attachment 25 has a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β, as viewed in the pressing direction.

[0072] The mounting device 1 configured in this manner is configured such that, when viewed in the pressing direction, heat from the first heater 12 is more easily transferred via the first attachment 13 to the region of the substrate α overlapping with the region Aβ1 than to other regions, and heat from the region Aβ1 is less easily transferred to the second attachment 25 than to other regions (heat from the region Aβ1 is less likely to escape to the second attachment 25). Furthermore, the mounting device 1 is configured such that, when viewed in the pressing direction, heat from the first heater 12 is less easily transferred via the first attachment 13 to the region of the substrate α overlapping with the region Aβ3, which has the lowest pressing-direction thermal conductivity, than to other regions, and heat from the region Aβ3 is more easily transferred to the second attachment 25 than to other regions (heat from the region Aβ3 is more likely to escape to the second attachment 25). This allows the mounting device 1 to suppress variations in heating temperature due to differences in the pressing-direction thermal conductivity of the integrated package β.

[0073] <Mounting of Integrated Package> Next, mounting of the integrated package β on the substrate α by the mounting device 1 will be described with reference to Figures 9 and 10. Figure 9 is a cross-sectional view of the mounting device 1 holding the substrate α and the integrated package β. Figure 10 is a cross-sectional view of the mounting device 1 holding the integrated package β on the substrate α in the first embodiment.

[0074] In the mounting device 1, the substrate α is loaded onto the first attachment 13 by an external transport device. The mounting device 1 suction-holds the substrate α by the first attachment 13. The substrate α is held at a predetermined position on the first attachment 13.

[0075] The mounting device 1 uses the pressing unit 23, which is moved by the pickup unit driving device 21, to suction-hold the integrated package β, which is located at a predetermined standby position, via the second attachment. The integrated package β is held at a predetermined position by the second attachment 25. At this time, the region A21 of the second attachment 25 is in contact with the region Aβ1 of the integrated package β. In this embodiment, the region A21 of the second attachment 25 is in contact with the first semiconductor chip β3. The region A22 of the second attachment 25 is in contact with the region Aβ2 of the integrated package β. In this embodiment, the region A22 of the second attachment 25 is in contact with the second semiconductor chip β4. The region A23 of the second attachment 25 is in contact with the region Aβ3 of the integrated package β. In this embodiment, the region A23 of the second attachment 25 is in contact with the resin β5.

[0076] 10 , the mounting device 1 uses the pressing unit 23 to place the integrated package β on the substrate α mounted on the first attachment 13. At this time, the integrated package β is held by the second attachment 25 in a state where the bumps β6 of the integrated package β are in contact with the electrodes on the substrate α.

[0077] The substrate α, on which the integrated package β is placed at a predetermined position, is held at a predetermined position by the first attachment 13. In this case, the region A11 of the first attachment 13 overlaps with the region Aβ1 of the integrated package β when viewed in the pressing direction. The region A12 of the first attachment 13 overlaps with the region Aβ2 of the integrated package β when viewed in the pressing direction. The region A23 of the second attachment 25 overlaps with the region Aβ3 of the integrated package β when viewed in the pressing direction.

[0078] To melt the bumps β6, the mounting device 1 heats the substrate α and the integrated package β to a first temperature via the first attachment 13 using the first heater 12. Heat is transferred to the first attachment 13 from the heating surface of the first heater 12. At the same time, the mounting device 1 presses the integrated package β toward the substrate α with a predetermined external force using the pressing unit 23.

[0079] The first attachment 13 is transferred from the first heater 12 at a rate proportional to the pressing direction thermal conductivity T11 of the region A11, the pressing direction thermal conductivity T12 of the region A12, and the pressing direction thermal conductivity T13 of the region A13 (see FIG. 6 ). Therefore, a greater amount of heat is transferred to the region A11 than to the regions A12 and A13. A greater amount of heat is transferred to the region A12 than to A13. A smaller amount of heat is transferred to the region A13 than to the regions A11 and A12. In other words, the heat from the first heater 12 is more easily transferred to the region A11 than to the regions A12 and A13. The heat from the first heater 12 is more easily transferred to the region A12 than to the region A13. The heat from the first heater 12 is less easily transferred to the region A13 than to the regions A11 and A12.

[0080] The heat transferred to the first attachment 13 is transferred to the substrate α at a rate proportional to the pressing direction thermal conductivity T11 of the region A11, the pressing direction thermal conductivity T12 of the region A12, and the pressing direction thermal conductivity T13 of the region A13 (see FIG. 6 ). Therefore, a greater amount of heat is transferred to the portion of the substrate α in contact with the region A11 than to the portions in contact with the regions A12 and A13. A greater amount of heat is transferred to the portion of the substrate α in contact with the region A12 than to the portion in contact with the region A13. A lesser amount of heat is transferred to the portion of the substrate α in contact with the region A13 than to the portions in contact with the regions A11 and A12.

[0081] Heat transferred from region A11 to substrate α is transferred in the following order: bump β6 located in region Aβ1 of integrated package β, a portion of package substrate β1, a portion of silicon interposer β2, and first semiconductor chip β3, via electrodes of substrate α overlapping region A11. Heat transferred from region A12 to substrate α is transferred in the following order: bump β6 located in region Aβ2 of integrated package β, a portion of package substrate β1, a portion of silicon interposer β2, and second semiconductor chip β4, via electrodes of substrate α overlapping region A12. Heat transferred from region A13 to substrate α is transferred in the following order: bump β6 located in region Aβ3 of integrated package β, a portion of package substrate β1, a portion of silicon interposer β2, and resin β5, via electrodes of substrate α overlapping region A13.

[0082] The integrated package β is transferred with a quantity of heat proportional to the pressing direction thermal conductivity Tβ1 of the region Aβ1, the pressing direction thermal conductivity Tβ2 of the region Aβ2, and the pressing direction thermal conductivity Tβ3 of the region Aβ3 (see FIG. 4). Therefore, a greater quantity of heat is transferred to the region Aβ1 than to the regions Aβ2 and Aβ3. A greater quantity of heat is transferred to the region Aβ2 than to the region Aβ3. A smaller quantity of heat is transferred to the region Aβ3 than to the regions Aβ1 and Aβ2. In other words, the heat from the first heater 12 is more easily transferred to the region Aβ1 where the first semiconductor chip β3 is located than to the regions Aβ2 and Aβ3. The heat from the first heater 12 is more easily transferred to the region Aβ2 where the second semiconductor chip β4 is located than to the region Aβ3. The heat from the first heater 12 is less easily transferred to the region Aβ3 where the resin β5 is located than to the regions Aβ1 and Aβ2.

[0083] The heat conducted to the integrated package β is conducted to the second attachment 25 at a rate proportional to the pressing direction thermal conductivity Tβ1 of the region Aβ1, the pressing direction thermal conductivity Tβ2 of the region A12, and the pressing direction thermal conductivity Tβ3 of the region A13 (see FIG. 4 ). The heat conducted to the region Aβ1 is conducted to the region A21 of the second attachment 25 that overlaps with the region Aβ1 via the first semiconductor chip β3 when viewed in the pressing direction. The heat conducted to the region Aβ2 is conducted to the region A22 of the second attachment 25 that overlaps with the region Aβ2 via the second semiconductor chip β4 when viewed in the pressing direction. The heat conducted to the region Aβ3 is conducted to the region A23 of the second attachment 25 via the resin β5 when viewed in the pressing direction.

[0084] The second attachment 25 receives a heat amount proportional to the pressing direction thermal conductivity T21 of the region A21, the pressing direction thermal conductivity T22 of the region A22, and the pressing direction thermal conductivity T23 of the region A23 (see FIG. 8 ). Therefore, less heat is transmitted to the portion of the pressing unit 23 in contact with the second attachment 25 that is in contact with the region A21 than to the portions in contact with the regions A22 and A23. Less heat is transmitted to the portion of the pressing unit 23 that is in contact with the region A22 than to the portion in contact with the region A23. More heat is transmitted to the portion of the pressing unit 23 that is in contact with the region A23 than to the portions in contact with the regions A21 and A22. In other words, the region A21 is less able to dissipate heat from the integrated package β to the outside than the regions A22 and A23. The region A22 is less able to dissipate heat from the integrated package β to the outside than the region A23. The area A23 dissipates heat from the integrated package β to the outside more easily than the areas A21 and A22.

[0085] The mounting device 1 increases the amount of heat transferred from the first heater 12 to the region Aβ1 of the integrated package β, by bringing the region A11, which has the highest pressure-direction thermal conductivity, in the first attachment 13 into contact with the region Aβ1, which heats up easily and cools down quickly. Furthermore, the mounting device 1 makes it difficult for the heat transferred to the region Aβ1 to escape to the outside by bringing the region A21, which has the lowest pressure-direction thermal conductivity, in contact with the region Aβ1. This makes it difficult for the mounting device 1 to make the temperature of the region Aβ1 drop below the first temperature.

[0086] Furthermore, the mounting device 1 contacts the region Aβ3 of the integrated package β, which is slow to heat up and cool down, with the region A13, which has the lowest pressure-direction thermal conductivity, of the first attachment 13, thereby suppressing the amount of heat transferred from the first heater 12 to the region Aβ3. Furthermore, the mounting device 1 contacts the region Aβ3 with the region A23, which has the highest pressure-direction thermal conductivity, of the second attachment 25, thereby making it easier for the heat transferred to the region Aβ3 to escape to the outside. As a result, the mounting device 1 makes it difficult for the temperature of the region Aβ3 to rise above the first temperature.

[0087] The integrated package β, which has been heated to the first temperature by the first heater 12 and pressed against the substrate α by the pressing unit 23, comes into contact with the electrodes of the substrate α with the bumps β6 in a melted state.

[0088] The mounting device 1 stops heating by the first heater 12 when a predetermined time has elapsed since the first heater 12 started heating and the pressing unit 23 started pressing. Furthermore, the mounting device 1 stops pressing by the pressing unit 23 when a predetermined time has elapsed since the heating by the first heater 12 stopped.

[0089] In this way, the mounting apparatus 1 adjusts the ease of heat transfer from the first heater 12 to the integrated package β using the first attachment 13, and adjusts the ease of heat transfer from the integrated package β to the outside using the second attachment 25.

[0090] The first attachment 13 can transfer a larger amount of heat to the region Aβ1 than the amount of heat escaping from the region Aβ1 to the outside, thereby maintaining the temperature of the region Aβ1 within the allowable temperature range. Furthermore, the first attachment 13 does not easily transfer heat to the region Aβ3, which has a lower thermal conductivity in the pressing direction of the integrated package β than other parts, thereby suppressing the temperature of the integrated package β within the allowable temperature range.

[0091] The second attachment 25 can maintain the temperature of the region Aβ1 within the allowable temperature range because the heat conducted to the region Aβ1, where the thermal conductivity in the pressing direction of the integrated package β is higher than that of other regions, is less likely to be transmitted to the outside. Furthermore, the second attachment 25 can easily transmit a portion of the heat stored in the region Aβ3, where the thermal conductivity in the pressing direction of the integrated package β is lower than that of other regions, to the outside, thereby keeping the temperature of the integrated package β within the allowable temperature range. This reduces temperature variations when the integrated package β, which has non-uniform thermal conductivity, is heated, and can prevent poor connection of the integrated package β to the substrate α.

[0092] [Variation 1 of Embodiment 1] A mounting device 1A according to Variation 1 of Embodiment 1 of the present invention will be described below with reference to Figures 1, 11, and 12. Figure 11 shows a plan view of a first attachment 13A according to Variation 1 of Embodiment 1 and a cross-sectional view taken along the line X-X in the plan view. Figure 12 shows a plan view of a second attachment 25A according to Variation 1 of Embodiment 1 and a cross-sectional view taken along the line XII-XII in the plan view.

[0093] The mounting device 1A has a first attachment 13A and a second attachment 25A whose configurations differ from the first attachment 13 and the second attachment 25 of the mounting device 1. In the following embodiments, the same components as those in the first embodiment are denoted by the same reference numerals and their description will be omitted, and only the parts that differ from the first embodiment will be described.

[0094] 1, the mounting apparatus 1A has a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 2). The stage unit 10 supports a first heater 12, which is a first heating section, and a first attachment 13A made of an aluminum alloy. The pickup unit 20 supports a pressing unit 23 and a second attachment 25A made of an aluminum alloy.

[0095] As shown in Figure 11, the first attachment 13A is configured to have a pressure-direction thermal conductivity based on the distribution of the pressure-direction thermal conductivity of the integrated package β when viewed in the pressure direction. The amount of heat from the first heater 12 transferred to the substrate α via the first attachment 13A varies depending on the type and thickness of the surface treatment of the first attachment 13A. The amount of heat from the first heater 12 (see Figure 1) transferred to the substrate α via the first attachment 13A is reduced, for example, by the first attachment 13A having an aluminum coating. In other words, the pressure-direction thermal conductivity of the first attachment 13A can be set to any value by changing the presence or absence of a surface treatment (hereinafter referred to as anodizing) that forms an aluminum coating at any position on the first attachment 13A and the thickness of the aluminum oxide coating.

[0096] In this embodiment, the region A11 of the first attachment 13A does not have an aluminum oxide coating. The region A12 of the first attachment 13A has an aluminum oxide coating C2 that is thinner than the region A13. The region A13 of the first attachment 13A has an aluminum oxide coating C3 that is thicker than the region A12.

[0097] Therefore, region A11 has a higher pressing direction thermal conductivity T11 than regions A12 and A13. Region A12 has a higher pressing direction thermal conductivity T12 than region A13. Region A13 has a lower pressing direction thermal conductivity T13 than regions A11 and A12.

[0098] As shown in FIG. 12 , the second attachment 25A is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat transferred from the first heater 12 (see FIG. 1 ) to the second attachment 25A from the integrated package β varies depending on the type and thickness of the surface treatment of the second attachment 25A. Therefore, the amount of heat transferred from the first heater 12 to the second attachment 25A from the integrated package β to the second attachment 25A is reduced, for example, by the second attachment 25A having an aluminum coating. In other words, the pressing direction thermal conductivity of the second attachment 25A can be set to any value by changing whether or not anodizing is performed at any position on the second attachment 25A and the thickness of the aluminum oxide coating.

[0099] In this embodiment, the region A21 of the second attachment 25A has the aluminum oxide coating C3 with the thickest thickness. The region A22 of the second attachment 25A has the aluminum oxide coating C2 with a thinner thickness than the region A21. The region A23 of the second attachment 25A does not have an aluminum oxide coating.

[0100] Therefore, region A21 has a lower pressing direction thermal conductivity T21 than regions A22 and A23. Region A22 has a lower pressing direction thermal conductivity T22 than region A23. Region A23 has a higher pressing direction thermal conductivity T23 than regions A21 and A22.

[0101] The mounting device 1A configured in this manner is configured so that, when viewed in the pressing direction, heat from the first heater 12 is more easily transferred via the first attachment 13A to a region of the substrate α overlapping with region Aβ1 (see FIG. 4) than to other regions, and heat from region Aβ1 is less easily transferred to the second attachment 25A than to other regions. Furthermore, the mounting device 1A is configured so that, when viewed in the pressing direction, heat from the first heater 12 is less easily transferred via the first attachment 13A to a region of the substrate α overlapping with region Aβ3 (see FIG. 4), which has the lowest thermal conductivity in the pressing direction, than to other regions, and heat from region Aβ3 is more easily transferred to the second attachment 25A than to other regions. The first attachment 13A and the second attachment 25A distribute the heat of the first heater 12 to each portion of the substrate α and the integrated package β by arbitrarily changing the presence or absence and thickness of an aluminum oxide film. As a result, the mounting device 1A can suppress variations in heating temperature due to differences in thermal conductivity of the integrated package β in the pressing direction, and can suppress poor connection of the integrated package β to the substrate α.

[0102] [Modification 2 of Embodiment 1] A mounting device 1B according to Modification 2 of Embodiment 1 of the present invention will be described below with reference to Figures 1, 13, and 14. Figure 13 shows a plan view of a first attachment 13B according to Modification 2 of Embodiment 1 and a cross-sectional view taken along the line XIII-XIII in the plan view. Figure 14 shows a plan view of a second attachment 25B according to Modification 2 of Embodiment 1 and a cross-sectional view taken along the line XIV-XIV in the plan view.

[0103] The mounting apparatus 1B differs from the first attachment 13 and the second attachment 25 of the mounting apparatus 1 in the configurations of the first attachment 13B and the second attachment 25B.

[0104] 1, the mounting apparatus 1B has a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 2). The stage unit 10 supports a first heater 12, which is a first heating section, and a first attachment 13B. The pickup unit 20 supports a pressing unit 23 and a second attachment 25B.

[0105] As shown in Figure 13, the first attachment 13B is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat from the first heater 12 (see Figure 1) transferred to the substrate α via the first attachment 13B varies depending on the material of the first attachment 13B. For example, the amount of heat from the first heater 12 transferred to the substrate α via the first attachment 13B is reduced when a portion of the first attachment 13B is made of resin. In other words, the pressing direction thermal conductivity of the first attachment 13B can be set to any value by changing the material at any position on the first attachment 13B.

[0106] In this embodiment, the region A11 of the first attachment 13B is made of a first member 13x made of an aluminum alloy. The region A12 of the first attachment 13B is made of a second member 13y made of iron, which has a lower thermal conductivity in the pressing direction than the first member 13x of the region 11A. The region A13 of the first attachment 13B is made of a third member 13z made of resin, which has a lower thermal conductivity in the pressing direction than the second member 13y of the region A12.

[0107] Therefore, region A11 has a higher pressing direction thermal conductivity T11 than regions A12 and A13. Region A12 has a higher pressing direction thermal conductivity T12 than region A13. Region A13 has a lower pressing direction thermal conductivity T13 than regions A11 and A12.

[0108] 14 , the second attachment 25B is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat transferred from the first heater 12 to the second attachment 25B varies depending on the material of the second attachment 25B. For example, the amount of heat transferred from the first heater 12 to the second attachment 25B is reduced when a portion of the second attachment 25B is made of resin. In other words, the pressing direction thermal conductivity of the second attachment 25B can be set to any value by changing the material at any position on the second attachment 25B.

[0109] In this embodiment, the region A21 of the second attachment 25B is formed of a first member 25x made of resin. The region A22 of the second attachment 25B is formed of a second member 25y made of iron, which has a higher thermal conductivity in the pressing direction than the member 25x of the region 21A. The region A23 of the first attachment 13B is formed of a third member 25z made of an aluminum alloy, which has a higher thermal conductivity in the pressing direction than the second member 25y of the region A22.

[0110] Therefore, region A21 has a lower pressing direction thermal conductivity T21 than regions A22 and A23. Region A22 has a lower pressing direction thermal conductivity T22 than region A23. Region A23 has a higher pressing direction thermal conductivity T23 than regions A21 and A22.

[0111] The mounting device 1B configured in this manner is configured so that, when viewed in the pressing direction, heat from the first heater 12 is more easily transferred via the first attachment 13B to the region of the substrate α overlapping with region Aβ1 than to other regions, and heat from region Aβ1 (see FIG. 4) is less easily transferred to the second attachment 25B than to other regions. Furthermore, the mounting device 1A is configured so that, when viewed in the pressing direction, heat from the first heater 12 is less easily transferred via the first attachment 13B to the region of the substrate α overlapping with region Aβ3 (see FIG. 4), which has the lowest thermal conductivity in the pressing direction, than to other regions, and heat from region Aβ3 is more easily transferred to the second attachment 25B than to other regions. The first attachment 13B and the second attachment 25B distribute the heat of the first heater 12 to each part of the substrate α and the integrated package β by arbitrarily changing the materials of the components of each region. As a result, the mounting device 1B can suppress variations in heating temperature due to differences in thermal conductivity of the integrated package β in the pressing direction, and can suppress poor connection of the integrated package β to the substrate α.

[0112] [Embodiment 2] A mounting apparatus 1C according to embodiment 2 of the present invention will be described below with reference to Figures 15 and 16. The mounting apparatus 1C differs from the mounting apparatus 1 in that it includes a second heater 26. Figure 15 is an overall configuration diagram of the mounting apparatus 1C according to embodiment 2 of the present invention. Figure 16 is a cross-sectional view of the mounting apparatus 1C according to embodiment 2 holding a substrate α and an integrated package β.

[0113] <Configuration of Mounting Apparatus 1C> As shown in FIGS. 15 and 16, the mounting apparatus 1C has a stage unit 10, a pickup unit 20, and a control device 30.

[0114] The pickup unit 20 is provided with a camera 22 that measures the positions of the substrate α and the integrated package β. The pickup unit 20 supports a pressing unit 23, a second attachment 25, and a second heater that is a second heating section.

[0115] The second heater 26, which is a second heating unit, heats the integrated package β via the second attachment 25. The second heater 26 is, for example, a constant heater having a ceramic housing. The second heater 26 is configured to maintain a preset second temperature. The second heater 26 is fixed to the pressing unit mounting surface 23a. The second heater 26 is disposed with its heating surface facing the first attachment 13. The second heater 26 is configured to be movable integrally with the pressing unit 23. The amount of heat transferred per unit area on the heating surface of the second heater 26 is equal at all positions. In other words, the second heater 26 heats the entire heating surface equally. The second heater 26 is configured to be controllable by a control device (not shown).

[0116] The second attachment 25 holds the integrated package β. The second attachment 25 is formed, for example, of a rectangular parallelepiped made of metal. The second attachment 25 is detachably fixed to the heating surface of the second heater 26. The second attachment 25 is configured to be movable integrally with the pickup unit 20 and the pressing unit 23. The second attachment 25 is heated by the second heater 26.

[0117] <Mounting of Integrated Package> Next, mounting of the integrated package β on the substrate α by the mounting apparatus 1C will be described with reference to FIG.

[0118] 16, the mounting device 1C uses a pressing unit 23 moved by a pickup unit driving device 21 (see FIG. 15) to suction and hold a stacked package β located at a predetermined standby position via the second attachment. The stacked package β is held at a predetermined position by the second attachment 25. At this time, the second heater 26 is maintained at a second temperature. Therefore, while held by the second attachment 25, the stacked package β is heated to the second temperature by the second heater 26 via the second attachment 25. Note that the second temperature is lower than the first temperature of the first heater 12 (see FIG. 15).

[0119] The second attachment 25 receives a heat quantity proportional to the pressing direction thermal conductivity T21 of the region A21, the pressing direction thermal conductivity T22 of the region A22, and the pressing direction thermal conductivity T23 of the region A23 (see FIG. 8 ). Therefore, a greater amount of heat is transmitted to the region A21 than to the regions A22 and A23. A greater amount of heat is transmitted to the region A22 than to the region A23. A smaller amount of heat is transmitted to the region A23 than to the regions A21 and A22. In other words, the heat from the first heater 12 is less transmitted to the region A21 than to the regions A22 and A23. The heat from the first heater 12 is less transmitted to the region A12 than to the region A13. The heat from the first heater 12 is more easily transmitted to the region A13 than to the regions A11 and A12.

[0120] The heat transferred to the second attachment 25 is transferred to the integrated package β at a rate proportional to the pressing direction thermal conductivity T21 of the region A21, the pressing direction thermal conductivity T22 of the region A22, and the pressing direction thermal conductivity T23 of the region A23. Therefore, less heat is transferred to the portion of the integrated package β in contact with the region A21 than to the portions in contact with the regions A22 and A23. Less heat is transferred to the portion of the integrated package β in contact with the region A22 than to the portion in contact with the region A23. More heat is transferred to the portion of the integrated package β in contact with the region A23 than to the portions in contact with the regions A21 and A22. In other words, the heat of the second heater 26 transferred to the region A21 is less transferred to the integrated package β than to the regions A22 and A23. The heat of the second heater 26 transferred to the region A22 is less transferred to the integrated package β than to the region A23. The heat of the second heater 26 that is transferred to the region A23 is more easily transferred to the integrated package β than to the region A21 and the region A22.

[0121] Heat transferred from region A21 to the integrated package β is transferred in the following order: first semiconductor chip β3, part of silicon interposer β2, part of package substrate β1, and bump β6, all of which are located in region Aβ1 of the integrated package β that overlaps region A21. Heat transferred from region A22 to the integrated package β is transferred in the following order: second semiconductor chip β4, part of silicon interposer β2, part of package substrate β1, and bump β6, all of which are located in region Aβ2 of the integrated package β that overlaps region A22. Heat transferred from region A23 to the integrated package β is transferred in the following order: resin β5, part of silicon interposer β2, part of package substrate β1, and bump β6, all of which are located in region Aβ3 of the integrated package β that overlaps region A23.

[0122] The integrated package β is transferred with a proportion of heat proportional to the pressing direction thermal conductivity T21 of the region A21, the pressing direction thermal conductivity T22 of the region A22, and the pressing direction thermal conductivity T23 of the region A23 (see FIG. 8). Therefore, less heat is transferred to the region Aβ1 than to the regions Aβ2 and Aβ3. Less heat is transferred to the region Aβ2 than to the region Aβ3. More heat is transferred to the region Aβ3 than to the regions Aβ1 and Aβ2. In other words, less heat is transferred to the region Aβ1, which has a pressing direction thermal conductivity Tβ1 higher than the regions Aβ2 and Aβ3, than to the regions Aβ2 and Aβ3 (see FIG. 4). Less heat is transferred to the region Aβ2, which has a pressing direction thermal conductivity Tβ2 higher than the region Aβ3, than to the region Aβ3 (see FIG. 4). A larger amount of heat is transferred to the region Aβ3 than to the regions Aβ1 and Aβ2, since the region Aβ3 has a lower thermal conductivity in the pressing direction Tβ3 than the regions Aβ1 and Aβ2 (see FIG. 4).

[0123] The mounting device 1C reduces the amount of heat transferred from the second heater 26 to the region Aβ1, which is easily heated, by bringing the region A21, which has the lowest pressing direction thermal conductivity T21, of the second attachment 25 into contact with the region Aβ1, which is easily heated, of the integrated package β. Furthermore, the mounting device 1 increases the amount of heat transferred from the second heater 26 to the region Aβ3, which is difficult to heat, by bringing the region A23, which has the highest pressing direction thermal conductivity T23 of the second attachment 25, into contact with the region Aβ3, which is difficult to heat, of the integrated package β. This allows the mounting device 1C to efficiently heat the integrated package β using the second heater 26.

[0124] In this way, the mounting device 1C adjusts the ease of heat transfer from the first heater 12 to the integrated package β using the first attachment 13, and adjusts the ease of heat transfer from the second heater 26 to the integrated package β using the second attachment 25.

[0125] The second attachment 25 reduces the amount of heat transferred to the region Aβ1 where the thermal conductivity in the pressing direction of the integrated package β is higher than that of other portions, and increases the amount of heat transferred to the region Aβ3 where the thermal conductivity in the pressing direction of the integrated package β is higher than that of other portions, thereby efficiently raising the temperature of the integrated package β to the second temperature. This reduces temperature variations when the integrated package β, which has non-uniform thermal conductivity, is heated, and prevents poor connection of the integrated package β to the substrate α.

[0126] [Other Embodiments] In the above-described embodiment 1, the mounting devices 1, 1A, and 1B uniformly heat the first attachment 13 using the first heater 12, which is the first heating unit, and in embodiment 2, the mounting device 1C uniformly heats the second attachment 25 using the second heater 26, which is the second heating unit. However, the first heating unit and the second heating unit may be configured to heat the first attachment and the second attachment to different temperatures in different regions.

[0127] 17 is a cross-sectional view of a first heater 12D and a first attachment 13 according to another embodiment. As shown in FIG. 17, the first heater 12D, which is a first heating unit, has a first heating region Ah1 and a second heating region Ah2. The first heating region Ah1 and the second heating region Ah2 are configured to be temperature-controllable independently. That is, the first heater 12D can heat the first heating region Ah1 and the second heating region Ah2 to different temperatures.

[0128] The first heating area Ah1 is positioned so as to overlap with the area A11 of the first attachment 13 when viewed in the pressing direction. The second heating area Ah2 is positioned so as to overlap with the areas A12 and A13 of the first attachment 13 when viewed in the pressing direction.

[0129] When the first attachment 13 is heated by the first heater 12D, heat based on the pressing direction thermal conductivity T11 and the first region temperature of the first heated region Ah1 is conducted to the region A11 of the first attachment 13. Heat based on the pressing direction thermal conductivity T12 and the second region temperature of the second heated region Ah2 is conducted to the region A12. Heat based on the pressing direction thermal conductivity T13 and the second region temperature of the second heated region Ah2 is conducted to the region A13.

[0130] With this configuration, the mounting device adjusts the temperatures of the substrate α and the integrated package β by changing the heating temperature of the first heater 12D based on the thermal conductivity of the integrated package β in the pressing direction, in addition to distributing heat using the first attachment 13. This makes it possible to suppress temperature variations when heating the integrated package β, which has non-uniform thermal conductivity, and to suppress poor connection of the integrated package β to the substrate α.

[0131] In the first embodiment described above, the mounting apparatuses 1, 1A, and 1B position the integrated package β relative to the substrate α using the pickup unit 20. However, the mounting apparatus may be configured to position the substrate α relative to the integrated package β using a stage.

[0132] In the first embodiment described above, the mounting apparatuses 1, 1A, and 1B pick up the integrated package β using the pickup unit 20. However, the mounting apparatus may be configured to pick up the integrated package β using an external pickup unit and position it relative to the substrate α.

[0133] In the above-described first and second embodiments, the mounting apparatuses 1, 1A, 1B, and 1C hold the substrate α with the first attachment 13 and the integrated package β with the second attachment. However, the mounting apparatus may be configured to hold the integrated package β with the first attachment and the substrate α with the second attachment.

[0134] In the above-described embodiments, the mounting devices 1, 1A, and 1B press the substrate α and the integrated package β mounted on the stage unit 10 using the pressing unit 23 that moves relatively toward the stage unit 10. However, the mounting devices may be configured to press the substrate α and the integrated package β by moving the stage unit on which the substrate α and the integrated package β are mounted toward the pressing unit.

[0135] In the above-described first and second embodiments, the first attachment 13 and the second attachment 25 adjust the thermal conductivity in the pressing direction by forming grooves in the region that contacts the substrate α or the integrated package β. However, the first attachment and the second attachment may adjust the thermal conductivity in the pressing direction by changing the surface roughness of the region that contacts the substrate α or the integrated package β.

[0136] In the above-described modification of the first embodiment, the first attachment 13 and the second attachment 25 have their pressure-direction thermal conductivity adjusted by forming an aluminum oxide film on the area in contact with the substrate α or the integrated package β. However, the surface treatment for adjusting the pressure-direction thermal conductivity of the first attachment and the second attachment may be any surface treatment that can adjust the pressure-direction thermal conductivity of the area in contact with the substrate α or the integrated package β.

[0137] In the above-described first and second embodiments, the pressing direction thermal conductivity of the first attachments 13, 13A, and 13B is adjusted by changing one of the contact area ratio, surface treatment, and material of the regions A11, A12, and A13, which are surfaces that come into contact with the substrate α. However, the pressing direction thermal conductivity of the first attachment may be adjusted by changing one of the contact area ratio, surface treatment, and material of at least one of the surfaces that come into contact with the substrate α (the object to be held) and the first heating unit.

[0138] In the above-described first and second embodiments, the second attachments 25, 25A, and 25B adjust the thermal conductivity in the pressing direction by changing one of the surface treatment and material and the contact area ratio of the regions A21, A22, and A23 that contact the integrated package β. However, the second attachment may adjust the thermal conductivity in the pressing direction by changing one of the surface treatment and material and the contact area ratio of at least one of the surface that contacts the integrated package β (the object to be held) and the surface that contacts the pressing unit (the second heating unit).

[0139] In the above-described first and second embodiments, the mounting devices 1, 1A, 1B, and 1C adjust the thermal conductivity in the pressing direction of the first attachments 13, 13A, and 13B and the second attachments 25, 25A, and 25B. However, the mounting device may be configured to adjust the thermal conductivity in the pressing direction of at least one of the first attachment and the second attachment.

[0140] In the first embodiment described above, the mounting apparatuses 1, 1A, and 1B heat the first attachments 13, 13A, and 13B using the first heater 12. However, the mounting apparatus may be configured to heat the second attachment.

[0141] In the above-described first and second embodiments, the mounting apparatuses 1, 1A, and 1B heat the first attachments 13, 13A, and 13B using the first heater 12, which is a pulse heater. However, the mounting apparatuses may be configured to heat the first attachments using a constant heater.

[0142] In the second embodiment described above, the mounting apparatus 1C heats the second attachment 25 by the second heater 26, which is a constant heater. However, the mounting apparatus may be configured to heat the second attachment by a pulse heater.

[0143] Although the embodiments of the present invention have been described above, the above-described embodiments are merely examples for carrying out the present invention. Therefore, the present invention is not limited to the above-described embodiments, and it is possible to appropriately modify the above-described embodiments within the scope of the spirit of the present invention.

[0144] 1, 1A, 1B, 1C, 1D Mounting device 10 Stage unit 10a Stage mounting surface 11 Stage driving device 12, 12D First heater 13, 13A, 13B First attachment 13a First attachment holding surface 13c Groove 13x, 25x First member 13y, 25y Second member 13z, 25z Third member 20 Pickup unit 20a Pickup unit mounting surface 21 Pickup unit driving device 22 Camera 23 Pressing unit 23a Pressing unit mounting surface 24 Pressing unit driving device 25, 25A, 25B Second attachment 25a Second attachment holding surface 25c Groove 26 Second heater 30 Control device α Substrate β Integrated package β1 Package substrate β2 Silicon interposer β3 First semiconductor chip β4 Second semiconductor chip β5 Resin β6 Bump A11, A12, A13 First attachment area A21, A22, A23 Second attachment area Aβ1, Aβ2, Aβ3 Integrated package area T11, T12, T13 Thermal conductivity of first attachment in pressing direction T21, T22, T23 Thermal conductivity of second attachment in pressing direction Tβ1, Tβ2, Tβ3 Thermal conductivity of integrated package in pressing direction C2, C3 Aluminum oxide film Ah1 First heating area Ah2 Second heating area

Claims

1. A stage on which at least one of an integrated package in which a plurality of semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted; a pressing portion disposed to face the stage, relatively moving toward the stage, and pressing the substrate and the integrated package; at least one of a first heating portion supported by the stage and heating the substrate and the integrated package, and a second heating portion supported by the pressing portion and heating the substrate and the integrated package; and at least one of a first attachment supported by the stage and contacting, from the moving direction of the pressing portion, either one of the substrate and the integrated package, and a second attachment supported by the pressing portion and contacting, from the moving direction of the pressing portion, the other one of the substrate and the integrated package, wherein the first attachment and the second attachment have a distribution of the pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity which is the thermal conductivity of the integrated package in the pressing direction of the pressing portion.

2. The mounting apparatus according to claim 1, wherein when the first attachment and the second attachment contact the substrate, the pressing direction thermal conductivity of the portion overlapping with the portion having the highest pressing direction thermal conductivity of the integrated package becomes the highest, and the pressing direction thermal conductivity of the portion overlapping with the portion having the lowest pressing direction thermal conductivity of the integrated package becomes the lowest when viewed in the pressing direction; and when the first attachment and the second attachment contact the integrated package, the pressing direction thermal conductivity of the portion overlapping with the portion having the highest pressing direction thermal conductivity of the integrated package becomes the lowest, and the pressing direction thermal conductivity of the portion overlapping with the portion having the lowest pressing direction thermal conductivity of the integrated package becomes the highest when viewed in the pressing direction.

3. In the mounting device according to claim 1 or 2, the first attachment changes the pressing direction thermal conductivity at any position by changing at least one of the ratio of the contact area per unit area between the substrate or the integrated package and the contact area per unit area between the first heating part at any position in the portion overlapping the integrated package when viewed in the pressing direction; the second attachment changes the pressing direction thermal conductivity at any position by changing at least one of the ratio of the contact area per unit area between the substrate or the integrated package and the contact area per unit area between the second heating part at any position in the portion overlapping the integrated package when viewed in the pressing direction. Mounting device.

4. In the mounting device according to claim 1 or 2, the first attachment changes the pressing direction thermal conductivity at any position by changing at least one of the surface treatment of the contact portion between the substrate or the integrated package and the surface treatment of the contact portion between the first heating part at any position in the portion overlapping the integrated package when viewed in the pressing direction; the second attachment changes the pressing direction thermal conductivity at any position by changing at least one of the surface treatment of the contact portion between the substrate or the integrated package and the surface treatment of the contact portion between the second heating part at any position in the portion overlapping the integrated package when viewed in the pressing direction. Mounting device.

5. In the mounting apparatus according to claim 1 or 2, the first attachment changes the pressing direction thermal conductivity at an arbitrary position by changing at least one of the material of the contact portion between the substrate or the integrated package and the first heating portion at an arbitrary position in a portion overlapping the integrated package when viewed in the pressing direction. The second attachment changes the pressing direction thermal conductivity at an arbitrary position by changing at least one of the material of the contact portion between the substrate or the integrated package and the second heating portion at an arbitrary position in a portion overlapping the integrated package when viewed in the pressing direction. Mounting apparatus.

6. In the mounting apparatus according to claim 1 or 2, including a first heating portion and a second heating portion, including a first attachment and a second attachment, the stage supports the first heating portion and the first attachment, the first heating portion heats the substrate via the first attachment, the pressing portion supports the second heating portion and the second attachment, and the second heating portion heats the integrated package via the second attachment. Mounting apparatus.

7. In the mounting apparatus according to claim 1 or 2, the heating portion has a plurality of heating regions that can be independently temperature-controlled, and is configured to be able to change the temperature of the plurality of heating regions based on the distribution of the pressing direction thermal conductivity of the integrated package. Mounting apparatus.

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