Mounting device and adjustment method

Abstract

Provided is a mounting device with which it is possible to suppress variation in temperature when heating an integrated package having a non-uniform thermal conductivity and suppress connection failure of the integrated package to a substrate. Specifically, the present invention comprises: a stage; a pressing unit that presses the substrate and the integrated package; a first attachment that is supported by the stage and comes into contact with one of the substrate and the integrated package; a second attachment that is supported by the pressing unit and comes into contact with the other of the substrate and the integrated package; a first heating unit that heats the first attachment; and a second heating unit that heats the second attachment. At least one of the first heating unit and the second heating unit has a plurality of heating regions based on a distribution of a pressing direction thermal conductivity, which is the thermal conductivity of the integrated package. The plurality of heating regions are configured so as to be able to generate heat at different heat generation amounts per unit time and per unit area.

Description

Mounting device and adjustment method

[0001] The present invention relates to a mounting apparatus for mounting an integrated package on a substrate and a method for adjusting the mounting apparatus.

[0002] A mounting apparatus for mounting a semiconductor chip on a substrate is known. The mounting apparatus places the semiconductor chip at a predetermined position on a stage substrate, and connects the semiconductor chip to the substrate by pressing the semiconductor chip against the substrate while melting the bumps on the semiconductor chip with heat.

[0003] In such a mounting device, if the temperature distribution of the semiconductor chip heated when connecting the semiconductor chip to the substrate is uneven, the melting state of the bumps on the semiconductor chip will vary. As a result, the semiconductor chip may not function properly due to poor connection to the substrate or uneven gaps between the semiconductor chip and the substrate. Therefore, mounting devices that suppress poor connection between the substrate and the semiconductor chip, uneven gaps between the substrate and the semiconductor chip, etc. are known.

[0004] The mounting apparatus (semiconductor manufacturing apparatus) described in Patent Document 1 includes a bonding head that mounts the semiconductor chip on the substrate, an attachment that is attached to the bonding head and that sucks the semiconductor chip, and a heating unit that heats the attachment. The heating unit has a first heating area and a second heating area that horizontally surrounds the first heating area. The mounting apparatus achieves a uniform temperature distribution of the semiconductor chip by independently controlling the temperatures of the first heating area and the second heating area.

[0005] International Publication No. 2021 / 100591

[0006] The mounting device described in Patent Document 1 achieves uniform temperature distribution of the semiconductor chip by setting the heating temperature of the second heating area, which heats the peripheral portion of the semiconductor chip, where the temperature is more likely to drop due to heat dissipation than the central portion of the semiconductor chip, higher than the heating temperature of the first heating area, which heats the central portion of the semiconductor chip. However, in an integrated package in which multiple different semiconductor chips are molded with resin, the integrated portion of the semiconductor chip, which has high thermal conductivity, and the resin portion, which has lower thermal conductivity than the integrated portion of the semiconductor chip, are unevenly located within the integrated package. In other words, the integrated package has a more complex thermal conductivity distribution than a single semiconductor chip. Therefore, the mounting device described in Patent Document 1 sometimes has difficulty achieving uniform heating to prevent poor connection between the substrate and the integrated package, uneven gaps between the substrate and the integrated package, etc.

[0007] An object of the present invention is to provide a mounting device and an adjustment method thereof that can suppress temperature variations when an integrated package with non-uniform thermal conductivity is heated and suppress poor connection of the integrated package to a substrate.

[0008] The present inventors have studied the configuration of a mounting device that can suppress temperature variations when an integrated package with non-uniform thermal conductivity is heated and can suppress poor connection of the integrated package to a substrate. As a result of extensive research, the present inventors have come up with the following configuration.

[0009] An implementation device according to an embodiment of the present invention includes a stage on which at least one of an integrated package in which multiple semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted; a pressing unit arranged opposite the stage and moving relatively toward the stage to press the substrate and the integrated package; a first attachment supported by the stage and contacting either the substrate or the integrated package from the direction of movement of the pressing unit; a second attachment supported by the pressing unit and contacting the other of the substrate or the integrated package from the direction of movement of the pressing unit; a first heating unit supported by the stage and heating the first attachment; and a second heating unit supported by the pressing unit and heating the second attachment.

[0010] At least one of the first heating unit and the second heating unit has a plurality of heating regions based on a distribution of thermal conductivity in a pressing direction, which is the thermal conductivity of the integrated package in the pressing direction of the pressing unit, and the plurality of heating regions are configured to generate heat at different amounts of heat per unit time and per unit area.

[0011] In the above configuration, at least one of the first heating unit and the second heating unit has multiple heating regions based on the distribution of the integrated package's pressure-direction thermal conductivity. Therefore, at least one of the first heating unit and the second heating unit heats the integrated package with a heat amount based on the integrated package's pressure-direction thermal conductivity. The mounting device adjusts the amount of heat transferred from the substrate to the integrated package, which is determined by the pressure-direction thermal conductivity and the temperature difference between the substrate and the integrated package, by heating using the multiple heating regions. This reduces temperature variations that occur when an integrated package with non-uniform thermal conductivity is heated uniformly, thereby preventing poor connection of the integrated package to the substrate.

[0012] From another viewpoint, the mounting device of the present invention preferably includes the following configuration: the plurality of heating regions overlap with each other at portions of the integrated package having different predetermined ranges of thermal conductivity in the pressing direction, as viewed in the pressing direction.

[0013] In the above-described configuration, the heating regions correspond to regions of pressure-direction thermal conductivity, with a region of the integrated package whose pressure-direction thermal conductivity falls within a predetermined range. Therefore, at least one of the first heating unit and the second heating unit can apply heat to each region of the integrated package whose pressure-direction thermal conductivity falls within a predetermined range, thereby transmitting an appropriate amount of heat for adjusting the temperature of each region of the pressure-direction thermal conductivity. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is uniformly heated, thereby reducing poor connection of the integrated package to a substrate.

[0014] From another viewpoint, the mounting device of the present invention preferably includes the following configuration: The plurality of heating regions are configured to generate heat at amounts proportional to the magnitude of the thermal conductivity in the pressing direction of the integrated packages that overlap when viewed in the pressing direction.

[0015] In the above configuration, when the heating region contacts at least one of the substrate and the integrated package, the heating region has a higher heat generation rate in a portion overlapping a portion of the integrated package where the pressure-direction thermal conductivity is higher than that of the other portion than the heating region overlapping the other portion. This allows the mounting device to suppress a temperature drop of the substrate by heating the portion where heat is more easily transferred from the substrate to the integrated package than the other portion with a higher heat generation rate than the other portion. Furthermore, the heating region has a lower heat generation rate in a portion overlapping a portion of the integrated package where the pressure-direction thermal conductivity is lower than that of the other portion than the heating region overlapping the other portion. This allows the mounting device to suppress a temperature rise of the substrate by heating the portion where heat is less easily transferred from the substrate to the integrated package than the other portion with a lower heat generation rate than the other portion. This suppresses temperature variations when an integrated package with non-uniform thermal conductivity is uniformly heated, thereby suppressing poor connection of the integrated package to the substrate.

[0016] From another perspective, the mounting device of the present invention preferably includes the following configuration: the first heating unit has a single heating area that generates heat at a predetermined heat amount per unit time and per unit area, and heats the substrate via the first attachment with the single heating area that generates heat with a uniform amount of heat, and the second heating unit has the plurality of heating areas that heat the integrated package via the second attachment with the plurality of heating areas that generate heat with different amounts of heat based on the distribution of thermal conductivity of the integrated package in the pressing direction.

[0017] In the above configuration, the integrated package, to which heat is transferred from the substrate uniformly heated by the first heating unit, is heated by the multiple heating regions of the second heating unit based on the distribution of pressure-direction thermal conductivity. The mounting device heats the integrated package with an amount of heat based on the pressure-direction thermal conductivity for each region of the integrated package whose pressure-direction thermal conductivity is within a predetermined range, thereby adjusting the amount of heat transferred from the substrate to the integrated package. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is heated, and prevents poor connection of the integrated package to the substrate.

[0018] From another viewpoint, it is preferable that the mounting device of the present invention includes the following configuration: a control unit that controls the second heating unit; the first attachment has temperature sensors at positions that overlap with the plurality of heating areas when viewed in the pressing direction; and the control unit controls the amount of heat generated by each of the plurality of heating areas so that the temperature detected by the temperature sensor falls within a predetermined range.

[0019] In the above configuration, the mounting device controls the heat generation amounts of the multiple heating regions so that the temperature of the first attachment holding the substrate falls within a predetermined range. That is, the mounting device heats the substrate using the multiple heating regions based on the substrate temperature, which varies depending on the difference in thermal conductivity of the integrated package in the pressing direction, thereby applying an amount of heat to the substrate that corresponds to the amount of heat transferred from the substrate to the integrated package. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is heated, and prevents poor connection of the integrated package to the substrate.

[0020] This is an adjustment method for adjusting the amount of heat generated by a first heating section that heats a substrate and an integrated package placed on the substrate from one side of the placement direction, and a second heating section that has multiple heating areas that heats from the other side of the placement direction.

[0021] The adjustment method includes a first temperature adjustment step of heating the substrate and the integrated package by a first heating unit and a first adjusted heating area, which is a heating area of ​​the second heating unit that adjusts the amount of heat generated, and adjusting the amount of heat generated by the first adjusted heating area so that the temperature of an area of ​​the substrate that overlaps with the first adjusted heating area when viewed in the placement direction is within a target temperature range; and a second adjusted heating area of ​​heating the substrate and the integrated package by the first heating unit and the first adjusted heating area that generates heat at the amount of heat generated adjusted in the first temperature adjustment step, and adjusting the amount of heat generated by the first adjusted heating area, which is a heating area of ​​the second heating unit whose amount of heat generated is not adjusted in the first temperature adjustment step. and a readjustment process for adjusting the heat generation amounts of the first and second adjusted heating areas so that, as viewed in the placing direction, the temperature of the area of ​​the substrate overlapping with the first adjusted heating area, which generates heat at the heat generation amount adjusted in the first temperature adjustment process, and the temperature of the area of ​​the substrate overlapping with the second adjusted heating area, which generates heat at the heat generation amount adjusted in the second temperature adjustment process, are each within the target temperature range.

[0022] In the above-described configuration, the heat generation amounts of the second heating unit having multiple heating zones are individually adjusted in the first temperature adjustment process and the second temperature adjustment process, and then the heat generation amounts of the multiple heating zones whose heat generation amounts have been adjusted in the first temperature adjustment process and the second temperature adjustment process are readjusted in the readjustment process. The adjustment method adjusts the heat generation amounts of each heating zone taking into account the influence of the heating zones set based on the thermal conductivity in the pressing direction (mounting direction) between the substrate and the integrated package. This reduces temperature variations when an integrated package with non-uniform thermal conductivity is uniformly heated, and can prevent poor connection of the integrated package to the substrate.

[0023] The terminology used herein is for the purpose of defining particular embodiments only and is not intended to limit the invention.

[0024] In this specification, the use of "including," "comprising," or "having" and variations thereof identify the presence of stated features, steps, operations, elements, components, and / or equivalents thereof, but may include one or more of the steps, operations, elements, components, and / or groups thereof.

[0025] As used herein, the terms "attached," "connected," "coupled," and / or their equivalents are used broadly to encompass both "direct and indirect" attachments, connections, and couplings. Furthermore, "connected" and "coupled" are not limited to physical or mechanical connections or couplings, but can also include direct or indirect electrical connections or couplings.

[0026] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0027] [Integrated Package] In this specification, the term "integrated package" refers to a single package in which multiple semiconductor chips are integrated and molded on a package substrate. The integrated package includes a 2.5D integrated package in which two or more active semiconductor chips are arranged side by side on a silicon interposer (or organic interposer) with wiring processed on a silicon substrate, and a 3D integrated package in which two or more active semiconductor chips are integrated by die stacking. The integrated package is a package in which an integrated circuit configured by heterogeneous integration is resin-molded. Note that multiple semiconductor chips may also be connected by a silicon bridge on the package substrate. In the following embodiments, the integrated package may have any structure as long as it is a single package in which multiple semiconductor chips are integrated and molded.

[0028] [Substrate] In this specification, the term "substrate" refers to a substrate on which an integrated package is mounted and on which a wiring circuit made of a material such as silicon, ceramics, or resin is patterned. The substrate has conductive wiring. The integrated circuit and the substrate are connected by welding bumps, which are protruding connection electrodes.

[0029] [Pressure-Direction Thermal Conductivity of Integrated Package] In this specification, the pressure-direction thermal conductivity of an integrated package refers to the stacking direction of the semiconductor chips and silicon interposers in the integrated package, and refers to the average thermal conductivity per unit area in the pressing direction of the pressing part of the mounting device. Because multiple silicon semiconductor chips are unevenly integrated, the pressure-direction thermal conductivity of the integrated package differs between the stacked semiconductor chips and the silicon interposer-only portion when viewed in the pressure direction. Therefore, the pressure-direction thermal conductivity of the integrated package is unevenly distributed when viewed in the pressure direction based on the shape and stacking direction of the semiconductor chips in the integrated package. In the following embodiments, the distribution of the pressure-direction thermal conductivity of the integrated package is determined in advance through experiments, analysis, etc.

[0030] [Distribution of Pressure-Direction Thermal Conductivity] In the following embodiments, the distribution of pressure-direction thermal conductivity refers to the position, size, and range of a region where the pressure-direction thermal conductivity falls within a certain range, and defines the region as having a pressure-direction thermal conductivity of the average value within the certain range. In the following embodiments, the entire region of the integrated package as viewed from the pressure direction contains multiple regions with pressure-direction thermal conductivities of different average values ​​within a certain range. In other words, the integrated package in this embodiment has multiple regions with pressure-direction thermal conductivities within a certain range as viewed from the pressure direction.

[0031] [Pressing Direction] In the following embodiments, the pressing direction refers not only to the direction in which the pressing portion presses the integrated package, but also to the direction of the reaction force of the force applied to the integrated package by the pressing portion. Note that in the following embodiments, the pressing direction refers to the mounting direction of the integrated package mounted on the substrate.

[0032] According to one embodiment of the present invention, the mounting device and adjustment method use at least one of the first heating unit and the second heating unit, which have multiple heating regions based on the distribution of pressing direction thermal conductivity, which is the thermal conductivity of the integrated package in the movement direction of the pressing unit, to suppress temperature variations when heating an integrated package with uneven thermal conductivity, and to suppress poor connection of the integrated package to the substrate.

[0033] FIG. 1 is an overall configuration diagram of a mounting apparatus according to first and second embodiments of the present invention. FIG. 2 is a control block diagram of the mounting apparatus according to the first embodiment of the present invention. FIG. 3 is a plan view of an integrated package mounted on a substrate by the mounting apparatus of the present invention. FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. 3. FIG. 5 is a plan view of a second heater according to the first embodiment of the present invention. FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 5 and a cross-sectional view taken along the line IV-IV in FIG. 3. FIG. 7 is a partial cross-sectional view of a jig. FIG. 8 is a partial cross-sectional view of the mounting apparatus according to the first embodiment of the present invention and the jig in a state in which the jig is held by the mounting apparatus according to the first embodiment of the present invention. FIG. 9 is a partial cross-sectional view of the mounting apparatus according to the first embodiment of the present invention and the integrated package in a state in which the substrate and the integrated package are held by the mounting apparatus according to the first embodiment of the present invention. FIG. 10 is a partial cross-sectional view of the mounting apparatus according to the first embodiment of the present invention and the integrated package in a state in which the integrated package has been placed on a substrate by the mounting apparatus according to the first embodiment of the present invention. FIG. 11 is a plan view of a first heating unit according to the second embodiment of the present invention. FIG. 12 is a cross-sectional view taken along the line XII-XII in FIG. 11 and a cross-sectional view of the substrate and the integrated package. Fig. 13 is a control block diagram of a mounting device according to a second embodiment of the present invention. Fig. 14 is a partial cross-sectional view of the mounting device and the jig in a state in which the jig is held by the mounting device according to the second embodiment of the present invention. Fig. 15 is a partial cross-sectional view of the mounting device in a state in which the mounting device has placed an integrated package on a substrate in a third embodiment of the present invention. Fig. 16 is a control block diagram of the mounting device according to the third embodiment of the present invention.

[0034] The mounting device according to the present invention will be described below with reference to the drawings. In each drawing, the same parts are designated by the same reference numerals, and the description of those parts will not be repeated. The dimensions of the components in each drawing do not faithfully represent the actual dimensions of the components and the dimensional ratios of the components. In the following description of the embodiments of the present invention, the X and Y directions are assumed to be directions on a horizontal plane. The Y direction is a direction perpendicular to the X direction. The Z direction is a direction perpendicular to the X and Y directions. In this embodiment, the Z direction is defined as the vertical direction. However, this definition of the directions is not intended to limit the orientation of the positioning device in each embodiment when in use.

[0035] Furthermore, in the following description, expressions such as "fix," "connect," "join," and "attach" (hereinafter referred to as "fixing") include not only cases where members are directly fixed to each other, but also cases where members are fixed via other members. In other words, in the following description, expressions such as "fixing" include both direct and indirect fixing of members to each other.

[0036] [Embodiment 1] <Configuration of Mounting Apparatus 1> A mounting apparatus 1 according to Embodiment 1 of the present invention will be described with reference to Figures 1 and 2. Figure 1 is an overall configuration diagram of the mounting apparatus 1 according to Embodiment 1 of the present invention and the mounting apparatus 1A according to Embodiment 2. Figure 2 is a control block diagram of the mounting apparatus 1.

[0037] 1, a mounting apparatus 1 mounts an integrated package β on a substrate α. The mounting apparatus 1 is provided in a manufacturing apparatus such as a semiconductor manufacturing apparatus (not shown). The mounting apparatus 1 has a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 2).

[0038] The stage unit 10 is a movable stage that positions the substrate α at any position on the XY plane. The stage unit 10 is supported by a frame (not shown). The stage unit 10 is disposed with its stage mounting surface 10a facing in the Z direction. The stage unit 10 has a stage driving device 11. The stage unit 10 is configured so that the stage mounting surface 10a can be moved to any position on the XY plane by the stage driving device 11. The stage unit 10 supports a first heater 12 and a first attachment 13, which are first heating sections.

[0039] The first heater 12 heats the substrate α via the first attachment 13. The first heater 12 is, for example, a pulse heater having a ceramic housing. The first heater 12 may be a laser heating type heater that heats with a laser, an induction heating type heater, or the like. The first heater 12 may be any heating device capable of heating the first attachment. The first heater 12 is configured to generate heat at a first heat generation amount C1, which is a preset heat generation amount per unit time and per unit area. The first heater 12 is fixed to the stage mounting surface 10a of the stage unit 10. The first heater 12 is disposed with its heating surface facing in the Z direction. The first heater 12 is configured to be movable integrally with the stage unit 10. The heat generation amount per unit time and per unit area on the heating surface of the first heater 12 is equal at all positions. In other words, the first heater 12 heats the entire heating surface equally.

[0040] The first attachment 13 holds the substrate α. The first attachment 13 is configured, for example, as a rectangular parallelepiped made of metal. The first attachment 13 is detachably fixed to the heating surface of the first heater 12. The first attachment 13 is disposed with its first attachment holding surface 13a, which holds the substrate α, facing the Z direction. The first attachment 13 has a plurality of suction holes (not shown) in the first attachment holding surface 13a. The first attachment 13 is configured so that the suction holes can be sucked by a suction device (not shown). The first attachment 13 is configured so that the substrate α can be sucked and held on the first attachment holding surface 13a by suction force generated in the suction holes. The first attachment 13 is configured so that it can move integrally with the first heater 12 by the stage unit 10. The first attachment 13 is heated by the first heater 12.

[0041] The pickup unit 20 is a unit that positions the integrated package β at any position on the XY plane. The pickup unit 20 is supported by a frame (not shown). The pickup unit 20 is disposed with its pickup unit mounting surface 20a facing the first attachment 13. The pickup unit 20 has a pickup unit drive device 21. The pickup unit 20 is configured to be movable to any position on the XY plane by the pickup unit drive device 21. The pickup unit 20 is provided with a camera 22 that measures the positions of the substrate α and the integrated package β. The pickup unit 20 supports a pressing unit 23, a second heater 25 that is a second heating unit, and a second attachment 26.

[0042] The pressing unit 23, which is a pressing section, is a unit that moves the integrated package β in the Z direction. The pressing unit 23 is fixed to the pickup unit mounting surface 20a. The pressing unit 23 is disposed so that the pressing unit mounting surface 23a faces the first attachment 13. The pressing unit 23 is configured to be able to move the pressing unit mounting surface 23a relatively to the stage unit 10 to any position in the Z direction by a pressing unit drive device 24. The pressing unit 23 is also configured to be able to press the pressing unit mounting surface 23a against an object with a predetermined force by the pressing unit drive device 24. The pressing unit 23 is also configured to be able to move integrally with the pickup unit 20. In other words, the pressing unit 23 is configured to be able to place the integrated package β at any position on the substrate α and press it.

[0043] The second heater 25 heats the integrated package β via the second attachment 26. The second heater 25 is, for example, a constant heater having a ceramic housing. The second heater 25 is fixed to the pressing unit mounting surface 23a. The second heater 25 is disposed with its heating surface facing the first attachment 13. The second heater 25 is configured to be movable integrally with the pressing unit 23. The second heater 25 has multiple heating regions.

[0044] The second attachment 26 holds the integrated package β. The second attachment 26 is configured as a rectangular parallelepiped made of, for example, an inorganic material such as ceramics, a metal, or the like. The second attachment 26 is detachably fixed to the mounting surface of the pressing unit 23. The second attachment 26 is arranged with its second attachment holding surface 26a, which holds the integrated package β, facing the first attachment 13. When the substrate α is held in a predetermined position on the first attachment 13, the second attachment 26 has a shape that overlaps the entire integrated package β placed on the substrate α when viewed in the pressing direction of the pressing unit 23. The second attachment 26 has suction holes (not shown) in the second attachment holding surface 26a. The second attachment 26 is configured to be able to suck the integrated package β through the suction holes by a suction device (not shown). The second attachment 26 is configured to be able to suck and hold the integrated package β on the second attachment holding surface 26a by suction force generated in the suction holes. The second attachment 26 is configured to be movable integrally with the pickup unit 20 and the pressing unit 23 .

[0045] 2, the control device 30 controls the stage drive device 11, the first heater 12, the pickup unit drive device 21, the camera 22, the pressing unit drive device 24, the second heater 25, and a suction pump (not shown). The control device 30 essentially includes a CPU, a ROM, a RAM, a HDD, and the like connected via a bus. Alternatively, the control device 30 may be configured as a one-chip LSI or the like. The control device 30 stores various programs and data for controlling the operations of the stage drive device 11, the first heater 12, the pickup unit drive device 21, the pressing unit drive device 24, the second heater 25, and the suction pump (not shown).

[0046] The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the stage driving device 11. The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction actuator of the pressing unit driving device 24. The control device 30 is electrically connected to the camera 22. The control device 30 is electrically connected to the first heater 12 and the second heater 25.

[0047] The control device 30 is also electrically connected to the camera 22. The control device 30 is electrically connected to the X-direction scale and the Y-direction scale included in the stage driving device 11 and the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction scale included in the pressing unit driving device 24.

[0048] The control device 30 is configured to be able to output a position control signal to the stage driving device 11 for positioning the first attachment 13 (see FIG. 1) mounted on the stage unit 10 at a target position. The control device 30 is configured to be able to output a position control signal to the pickup unit driving device 21 and the pressing unit driving device 24 for positioning the second attachment 26 mounted on the pressing unit 23 at a target position.

[0049] The control device 30 is configured to be able to output a heat generation amount control signal to the first heater 12 to cause it to generate heat at a first heat generation amount C1. The control device 30 is configured to be able to output a heat generation amount control signal to the multiple heating regions of the second heater 25 to cause them to generate heat at a predetermined heat generation amount.

[0050] The control device 30 is configured to be able to output a control signal for capturing images of the substrate α and the integrated package β to the camera 22. The control device 30 is configured to be able to output a suction control signal to a suction pump (not shown).

[0051] The control device 30 can acquire the X and Y coordinates of the substrate α and the integrated package β using the camera 22. The control device 30 can acquire the X and Y coordinates of the first attachment 13 and the second attachment 26 using the X-direction scale and the Y-direction scale. The control device 30 can acquire the Z coordinate of the second attachment 26 using the Z-direction scale.

[0052] The mounting device 1 configured as described above holds the substrate α by suction when the substrate α is loaded onto the first attachment 13 of the stage unit 10 from an external transport device. The mounting device 1 holds the integrated package β by suction using the second attachment of the pickup unit 20. While checking the position of the substrate α using the camera 22, the mounting device 1 adjusts the position of the substrate α in the X and Y directions using the stage driver 11, and adjusts the position of the integrated package β in the X and Y directions using the pickup unit driver 21. The mounting device 1 adjusts the position of the integrated package β in the Z direction using the pressing unit driver 24, and places the integrated package β at a predetermined position on the substrate α.

[0053] The mounting device 1 presses the integrated package β, which is placed at a predetermined position on the substrate α, toward the substrate α using the pressing unit driving device 24. At the same time, the mounting device 1 heats the substrate α via the first attachment 13 using the first heater 12. The mounting device 1 heats the integrated package β via the second attachment 26 using the second heater 25. The heat transferred to the substrate α via the first attachment 13 and the heat transferred to the integrated package β via the second attachment 26 melt the bumps β6 (see FIG. 4 ) of the integrated package β. In this way, the mounting device 1 connects the integrated package β to the predetermined position on the substrate α.

[0054] <Structure of Integrated Package and Thermal Conductivity in the Pressing Direction> Next, the structure and thermal conductivity in the pressing direction of the integrated package β will be described with reference to Figures 3 and 4. Figure 3 is a plan view of the integrated package β mounted on a substrate by the mounting devices 1, 1A, and 1B. Figure 4 is a cross-sectional view taken along the line IV-IV in Figure 3.

[0055] 3 and 4, the integrated package β is an integrated package in which a first semiconductor chip β3 and a second semiconductor chip β4 are connected to a resin package substrate β1 (see FIG. 4) via a silicon interposer β2 (see FIG. 4). The integrated package β is molded with resin β5. The surfaces of the first semiconductor chip β3 and the second semiconductor chip β4 opposite the silicon interposer β2 are not covered with resin β5. The package substrate β1 has bumps β6 including electrodes.

[0056] As shown in Figure 3, the integrated package β has a first region Aβ1 in which a package substrate β1 (see Figure 4), a silicon interposer β2 (see Figure 4), and a first semiconductor chip β3 are stacked, a second region Aβ2 in which a package substrate β1, a silicon interposer β2, and a second semiconductor chip β4 are stacked, and a third region Aβ3 (shaded area) in which a package substrate β1, a silicon interposer β2, and a resin β5 are stacked.

[0057] As shown in Figure 4, the pressure direction thermal conductivity Tβ1 of the first region Aβ1 is the highest in the integrated package β. When heat is transferred from the second heater 25 located on the pressing unit 23 side to the first region Aβ1, the bumps β6 located in the first region Aβ1 are the most susceptible to heating and cooling (the least likely to accumulate heat). Also, when heat is transferred from the first heater 12 located on the stage unit 10 side to the first region Aβ1, the bumps β6 located in the first region Aβ1 are the least susceptible to heating and cooling (the least likely to accumulate heat). Therefore, if heating is not continued in the first region Aβ1, the temperature is likely to drop below the temperature required for mounting on the substrate α.

[0058] The thermal conductivity Tβ2 in the pressing direction of the second region Aβ2 is set to be the second highest in the integrated package β after the first region Aβ1.

[0059] The pressure direction thermal conductivity Tβ3 of the third region Aβ3 is the lowest in the integrated package β. When heat is transferred from the second heater 25 located on the pressing unit 23 side to the third region Aβ3, the bumps β6 located in the third region Aβ3 are the least likely to heat up and cool down (they are the most likely to accumulate heat). Also, when heat is transferred from the first heater 12 located on the stage unit 10 side to the third region Aβ3, the bumps β6 located in the third region Aβ3 are the most likely to heat up and cool down (they are the most likely to accumulate heat). Therefore, the temperature of the third region Aβ3 is likely to rise above the above temperature if heating continues.

[0060] <Heating Area of ​​Second Heating Unit> Next, the first heating area A21, second heating area A22, and third heating area A23 of the second heater 25 will be described with reference to Fig. 2 and Figs. 5 to 8. Fig. 5 is a plan view of the second heater 25. Fig. 6 is a cross-sectional view taken along the line VI-VI in Fig. 5 and a cross-sectional view taken along the line IV-IV in Fig. 3. Fig. 7 is a partial cross-sectional view of the jig T. Fig. 8 is a partial cross-sectional view of the mounting device 1 and the jig T in a state in which the jig T is held by the mounting device 1. In the following description, it is assumed that an integrated package β is disposed at a predetermined position on the substrate α.

[0061] 5 and 6 , the second heater 25 has a shape that overlaps at least a portion of the integrated package β arranged on the substrate α when viewed in the pressing direction of the pressing unit 23 while the substrate α is held in a predetermined position on the first attachment 13. In this embodiment, the second heater 25 overlaps the entire integrated package β when viewed in the pressing direction. The second heater 25 is also configured to be able to withstand the force applied to the integrated package β by the pressing unit 23.

[0062] The second heater 25 has multiple heating regions. The multiple heating regions are a first heating region A21, a second heating region A22, and a third heating region A23, which are determined based on the distribution of thermal conductivity in the pressing direction of the integrated package β. The first heating region A21, the second heating region A22, and the third heating region A23 are configured to independently change the heat generation amount per unit time and per unit area. The first heating region A21 generates heat at a first heating region heat generation amount C21, which is the heat generation amount per unit time and per unit area (see FIG. 2). The second heating region A22 generates heat at a second heating region heat generation amount C22, which is the heat generation amount per unit time and per unit area (see FIG. 2). The third heating region A23 generates heat at a third heating region heat generation amount C23, which is the heat generation amount per unit time and per unit area (see FIG. 2).

[0063] As shown in FIG. 6 , the first heated region A21 overlaps with at least a portion of the first region Aβ1 of the integrated package β when viewed in the pressing direction. The second heated region A22 overlaps with at least a portion of the second region Aβ2 of the integrated package β when viewed in the pressing direction. The third heated region A23 overlaps with the third region Aβ3 when viewed in the pressing direction. In this embodiment, the first heated region A21 overlaps with the entire first region Aβ1 when viewed in the pressing direction and has substantially the same shape as the first region Aβ1. In this embodiment, the second heated region A22 overlaps with the entire second region Aβ2 when viewed in the pressing direction and has substantially the same shape as the second region Aβ2. In this embodiment, the third heated region A23 overlaps with the entire third region Aβ3 when viewed in the pressing direction.

[0064] 2, the first heating area A21, the second heating area A22, and the third heating area A23 are electrically connected to the control device 30. The first heating area A21 is configured to generate heat, for example, at a first heating area heat generation amount C21, based on a heat generation control signal from the control device 30. The second heating area A22 is configured to generate heat, for example, at a second heating area heat generation amount C22, based on a heat generation control signal from the control device 30. The third heating area A23 is configured to generate heat, for example, at a third heating area heat generation amount C23, based on a heat generation control signal from the control device 30.

[0065] 7 and 8, the setting of the heat amounts of the first heating area A21, the second heating area A22, and the third heating area A23 will be described. The heat amounts of the first heating area A21, the second heating area A22, and the third heating area A23 are determined by temperature measurement using a jig T.

[0066] 7, the jig T includes a substrate α, an integrated package β, a first jig temperature sensor γ1, a second jig temperature sensor γ2, and a third jig temperature sensor γ3. The jig T has the integrated package β mounted on the substrate α. The jig T also includes the first jig temperature sensor γ1, the second jig temperature sensor γ2, and the third jig temperature sensor γ3 between the substrate α and the integrated package β.

[0067] As shown in FIG. 8 , the first jig temperature sensor γ1 is positioned so as to overlap the first region Aβ1 when viewed in the pressing direction. That is, the first jig temperature sensor γ1 detects the temperature between the substrate α and the integrated package β in the first region Aβ1 when viewed in the pressing direction. The second jig temperature sensor γ2 is positioned so as to overlap the second region Aβ2 when viewed in the pressing direction. That is, the second jig temperature sensor γ2 detects the temperature between the substrate α and the integrated package β in the second region Aβ2 when viewed in the pressing direction. The third jig temperature sensor γ3 is positioned so as to overlap the third region Aβ3 when viewed in the pressing direction. That is, the third jig temperature sensor γ3 detects the temperature between the substrate α and the integrated package β in the third region Aβ3 when viewed in the pressing direction.

[0068] The jig T is mounted on the first attachment 13 of the mounting device 1 and is pressed by the pressing unit 23 via the second attachment 26. Furthermore, the jig T is heated by the first heater 12, which generates heat at a first heat generation amount C1, and is also heated by the first heating area A21, the second heating area A22, and the third heating area A23 of the second heater 25 (see FIG. 8). At this time, the first heating area A21, the second heating area A22, and the third heating area A23 generate heat at a second heat generation amount C2.

[0069] The heat from the first heater 12 transferred to the substrate α is transferred to the integrated package β at a rate proportional to the pressing direction thermal conductivity Tβ1 of the first region Aβ1 (see FIG. 7), the pressing direction thermal conductivity Tβ2 of the second region Aβ2 (see FIG. 7), and the pressing direction thermal conductivity Tβ3 of the third region Aβ3 (see FIG. 7). The portion of the substrate α of the jig T that overlaps with the first region Aβ1, which has the highest pressing direction thermal conductivity Tβ1, when viewed in the pressing direction, is most susceptible to transferring heat to the integrated package β. In other words, heat transferred to the portion of the substrate α that overlaps with the first region Aβ1 when viewed in the pressing direction is most susceptible to escaping from the substrate α to the integrated package β. The portion of the substrate α of the jig T that overlaps with the third region Aβ3, which has the lowest pressing direction thermal conductivity Tβ3, when viewed in the pressing direction, is least susceptible to transferring heat to the integrated package β. In other words, when viewed in the pressing direction, the heat transferred to the portion of the substrate α that overlaps with the third region Aβ3 is less likely to escape from the substrate α to the integrated package β.

[0070] Furthermore, the heat from the first heater 12 transferred to the substrate α is transferred to the integrated package β at a rate proportional to the temperature difference between the first region Aβ1 and the substrate α, the temperature difference between the second region Aβ2 and the substrate α, and the temperature difference between the third region Aβ3 and the substrate α. The portion of the substrate α of the jig T that overlaps with the first region Aβ1, which has the highest pressing-direction thermal conductivity Tβ1, as viewed in the pressing direction, becomes less likely to transfer heat to the integrated package β when the temperature difference with the first region Aβ1 is reduced. The portion of the substrate α of the jig T that overlaps with the third region Aβ3, which has the lowest pressing-direction thermal conductivity Tβ3, as viewed in the pressing direction, becomes more likely to transfer heat to the integrated package β when the temperature difference with the third region Aβ3 is increased.

[0071] In the jig T, the first heating area A21, the second heating area A22, and the third heating area A23 heat each portion of the integrated package β to different temperatures, and thus an amount of heat corresponding to the temperature difference between the substrate α and each portion of the integrated package β is transferred from the substrate α to the integrated package β. This changes the temperature between the substrate α and the integrated package β of the jig T. Therefore, the second heater 25 can adjust the heat generation amount for each heating area to adjust the temperature between the substrate α and the integrated package β.

[0072] Poor connection when the integrated package β is mounted on the substrate α can be suppressed by uniformly melting the bumps connecting the substrate α and the integrated package β. Therefore, the first heating region heat generation amount C21, the second heating region heat generation amount C22, and the third heating region heat generation amount C23 of the second heater 25 are determined to be heat generation amounts such that the temperature of the first region Aβ1 detected by the first jig temperature sensor γ1 of the jig T, the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2, and the temperature of the third region Aβ3 detected by the third jig temperature sensor γ3 of the jig T are within a predetermined range.

[0073] The portion of the substrate α overlapping the first region Aβ1, which has the highest thermal conductivity in the pressing direction, is heated by the first heating region A21, which generates heat at a first heating region heat generation amount C21 higher than the second heating region heat generation amount C2, thereby reducing the temperature difference between the substrate α and the integrated package β. Therefore, the temperature of the portion of the substrate α overlapping the first region Aβ1 in the pressing direction is likely to rise because the amount of heat transferred to the first region Aβ1 is reduced. Furthermore, the portion of the substrate α overlapping the third region Aβ3, which has the lowest thermal conductivity in the pressing direction, is heated by the third heating region A23, which generates heat at a third heating region heat generation amount C23 lower than the second heating region heat generation amount C22, thereby increasing the temperature difference between the substrate α and the integrated package β. Therefore, the temperature of the portion of the substrate α overlapping the third region Aβ3 in the pressing direction is unlikely to rise because the amount of heat transferred to the third region Aβ3 is increased. As a result, the mounting device 1 can adjust the temperature between the substrate α and the integrated package β within a predetermined range by adjusting the heat generation amounts of the first heating area A21, the second heating area A22, and the third heating area A23.

[0074] A method for adjusting the temperature (heat generation amount) of each heating region using the jig T by the control device 30 will be specifically described. The control device 30 is electrically connected to the jig T and can acquire the temperature of the first region Aβ1 detected by the first jig temperature sensor γ1 of the jig T, the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2, and the temperature of the third region Aβ3 detected by the third jig temperature sensor γ3. The temperature sensors that measure the temperature of each heating region may be disposed on the second attachment 26.

[0075] As a first temperature adjustment step, the control device 30 sets one of the heating regions of the first heater 12 and the second heater 25 as a first adjusted heating region, and heats the jig T using the first adjusted heating region. The control device 30 heats the jig T, for example, using the first heater 12 and the first heated region A21, which is the first adjusted heating region of the second heater 25. The control device 30 adjusts the heat generation amount of the first heater 12 and the heat generation amount of the first heated region A21 of the second heater 25 so that the temperature of the first region Aβ1 detected by the first jig temperature sensor γ1 of the jig T is within the target temperature range of the first region Aβ1.

[0076] In the second temperature adjustment step, the control device 30 heats the first heating region A21 of the second heater 25, the heat generation amount of which has been adjusted as the first adjusted heating region in the first temperature adjustment step, and the first heater 12, at the adjusted heat generation amount, while setting the heating region of the second heater 25, the heat generation amount of which has not been adjusted in the first temperature adjustment step, as the second adjusted heating region, and heats the jig T using the second adjusted heating region. The control device 30 heats the jig T, for example, using the second heating region A22 of the second heater 25 as the second adjusted heating region. The control device 30 adjusts the heat generation amount of the second heating region A22 of the second heater 25 so that the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2 of the jig T is within the target temperature range of the second region Aβ2.

[0077] In the readjustment step, the control device 30 heats the first heating region A21 of the second heater 25 with the heat generation amount adjusted in the first temperature adjustment step, and heats the second heating region A22 of the second heater 25 with the heat generation amount adjusted in the second temperature adjustment step, while heating the first heater 12. Furthermore, the control device 30 readjusts the heat generation amount of the first heating region A21 and the heat generation amount of the second heating region A22 of the second heater 25 so that the temperature of the first region Aβ1 detected by the first jig temperature sensor γ1 is within the target temperature range of the first region Aβ1, and the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2 is within the target temperature range of the second region Aβ2.

[0078] In this way, the control device 30 performs a first temperature adjustment process in which one of the heating regions is designated as a first adjustment heating region and the heat generation amount is adjusted, and then performs a second adjustment process in which the other heating region whose heat generation amount was not adjusted in the first temperature adjustment process is designated as a second adjustment heating region and the heat generation amount is adjusted. Furthermore, the control device 30 readjusts the heat generation amount of each heating region so that the temperature of the region heated by each adjustment heating region whose heat generation amount was adjusted in the first temperature adjustment process and the second temperature adjustment process falls within the target temperature range of each region. This makes it possible to adjust the heat generation amount of each heating region taking into account the influence of the other heating regions.

[0079] As described above, the first heating area A21 is controlled to generate heat at a first heating area heat generation amount C21 that is greater than the second heating area heat generation amount C22 of the second heating area A22 and the third heating area heat generation amount C23 of the third heating area A23. The second heating area A22 is controlled to generate heat at a second heating area heat generation amount C22 that is greater than the third heating area heat generation amount C23 of the third heating area A23. The third heating area A23 is controlled to generate heat at a third heating area heat generation amount C23 that is smaller than the first heating area heat generation amount C21 of the first heating area A21 and the second heating area heat generation amount C22 of the second heating area A22.

[0080] The mounting device 1 configured in this manner reduces the temperature difference between the substrate α and the first region Aβ1 compared to the other regions, thereby suppressing the amount of heat transferred from the substrate α to the integrated package β. Furthermore, the mounting device 1 increases the temperature difference between the substrate α and the third region Aβ3 compared to the other regions, thereby increasing the amount of heat transferred from the substrate α to the integrated package β. In this way, the mounting device 1 adjusts the heat generation amounts of the first heating region A21, the second heating region A22, and the third heating region A23 based on the distribution of the pressure direction thermal conductivity of the integrated package β, thereby suppressing variations in the temperature distribution between the substrate α and the integrated package β and suppressing poor connection of the integrated package β to the substrate α.

[0081] <Mounting of Integrated Package> Next, mounting of the integrated package β on the substrate α by the mounting device 1 will be described with reference to Figures 9 and 10. Figure 9 is a partial cross-sectional view of the mounting device 1 and the integrated package β in a state in which the mounting device 1 holds the substrate α and the integrated package β. Figure 10 is a cross-sectional view of the mounting device 1 and the integrated package β in a state in which the integrated package β is placed on the substrate α in embodiment 1. Note that the mounting device 1 controls each part using control signals from the control device 30.

[0082] 9 , in the mounting apparatus 1, a substrate α is loaded onto the first attachment 13 by an external transport device (not shown). The mounting apparatus 1 suction-holds the substrate α using the first attachment 13. The substrate α is held at a predetermined position on the first attachment 13.

[0083] The mounting device 1 uses the pressing unit 23, which is moved by the pickup unit driving device 21, to suction and hold the stacked package β, which is located at a predetermined standby position, via the second attachment 26. The stacked package β is held at a predetermined position by the second attachment 26. At this time, the first heating area A21 of the second heater 25 holding the second attachment 26 overlaps with the first area Aβ1 of the stacked package β when viewed in the pressing direction. The second heating area A22 of the second heater 25 overlaps with the second area Aβ2 of the stacked package β when viewed in the pressing direction. The third heating area A23 of the second heater 25 overlaps with the third area Aβ3 of the stacked package β when viewed in the pressing direction.

[0084] 10 , the mounting device 1 uses the pressing unit 23 to place the integrated package β on the substrate α mounted on the first attachment 13. At this time, the integrated package β is held by the second attachment 26 in a state where the bumps β6 of the integrated package β are in contact with the electrodes on the substrate α.

[0085] The mounting device 1 heats the first heater 12 at a first heat generation amount C1 to melt the bump β6. At the same time, the mounting device 1 causes the second heater 25 to generate heat in the first heating area A21 at a first heating area heat generation amount C21, the second heating area A22 at a second heating area heat generation amount C22, and the third heating area A23 at a third heating area heat generation amount C23.

[0086] Heat is uniformly transferred from the heating surface of the first heater 12 to the substrate α via the first attachment 13. Heat is transferred from the first heating area A21, the second heating area A22, and the third heating area A23 to the integrated package β via the second attachment 26. At the same time, the mounting device 1 presses the integrated package β toward the substrate α with a predetermined external force using the pressing unit 23. The temperature of the first heater 12 is higher than the maximum temperature of the second heater 25.

[0087] When viewed in the pressing direction, heat from the first heater 12 that is transferred to the portion of the substrate α that overlaps with the first region Aβ1 is transferred to the first region Aβ1 of the integrated package β based on the pressing direction thermal conductivity Tβ1 of the first region Aβ1 and the temperature difference between the first region Aβ1 and the substrate α (see FIG. 6). When viewed in the pressing direction, heat from the first heater 12 that is transferred to the portion of the substrate α that overlaps with the second region Aβ2 is transferred to the second region Aβ2 of the integrated package β based on the pressing direction thermal conductivity Tβ2 of the second region Aβ2 and the temperature difference between the second region Aβ2 and the substrate α (see FIG. 6). When viewed in the pressing direction, heat from the first heater 12 that is transferred to the portion of the substrate α that overlaps with the third region Aβ3 is transferred to the third region Aβ3 of the integrated package β based on the pressing direction thermal conductivity Tβ3 of the third region Aβ3 and the temperature difference between the third region Aβ3 and the substrate α (see FIG. 6).

[0088] Heat transferred to the portion of the substrate α overlapping with the first region Aβ1 in the pressing direction is transferred via electrodes of the substrate α, in the order of bumps β6 located in the first region Aβ1 of the integrated package β, a portion of the package substrate β1, a portion of the silicon interposer β2, and the first semiconductor chip β3. Heat transferred to the portion of the substrate α overlapping with the second region Aβ2 in the pressing direction is transferred via electrodes of the substrate α, in the order of bumps β6 located in the second region Aβ2 of the integrated package β, a portion of the package substrate β1, a portion of the silicon interposer β2, and the second semiconductor chip β4. Heat transferred to the portion of the substrate α overlapping with the third region Aβ3 in the pressing direction is transferred via electrodes of the substrate α, in the order of bumps β6 located in the third region Aβ3 of the integrated package β, a portion of the package substrate β1, a portion of the silicon interposer β2, and the resin β5.

[0089] Heat is transferred to the first region Aβ1 of the integrated package β via the second attachment 26 from the first heating region A21, which is generating heat at a first heating region heat generation amount C21 (see FIG. 2). The first region Aβ1 is heated to a higher temperature than the second region Aβ2 and the third region Aβ3. In other words, the temperature difference between the first region Aβ1 and the substrate α is smallest. Heat is transferred to the second region Aβ2 of the integrated package β via the second attachment 26 from the second heating region A22, which is generating heat at a second heating region heat generation amount C22 (see FIG. 2). The second region Aβ2 is heated to a lower temperature than the first region Aβ1. In other words, the temperature difference between the second region Aβ2 and the substrate α is the second smallest after the first region Aβ1. Heat is transferred to the third region Aβ3 of the integrated package β via the second attachment 26 from the third heating region A23, which is generating heat at a third heating region heat generation amount C23 (see FIG. 2). The third region Aβ3 is heated to a temperature lower than that of the second region Aβ2, that is, the temperature difference between the third region Aβ3 and the substrate α is the largest.

[0090] The portion of the substrate α in contact with the first region Aβ1, which is heated to the highest temperature by the first heating region A21, has a small temperature difference from the first region Aβ1, and therefore transfers less heat to the integrated package β than other portions of the substrate α. The portion of the substrate α in contact with the third region Aβ3, which has the lowest thermal conductivity in the pressing direction, has a large temperature difference from the third region Aβ3, and therefore transfers more heat to the integrated package β than other portions of the substrate α. The mounting device 1 adjusts the amount of heat transferred from the substrate α to the integrated package β by adjusting the heat values ​​of the first heating region A21, the second heating region A22, and the third heating region A23. In other words, the mounting device 1 adjusts the ease of heat transfer from the first heater 12 from the substrate α to the integrated package β using the second heater 25. This allows the temperature between the substrate α and the integrated package β to be maintained within a predetermined range.

[0091] The integrated package β, which is heated by the first heater 12 and the second heater 25 and pressed against the substrate α by the pressing unit 23, comes into contact with the electrodes of the substrate α with the bumps β6 in a melted state.

[0092] The mounting device 1 stops heating by the first heater 12 and the second heater 25 when a predetermined time has elapsed since heating by the first heater 12 and the second heater 25 and pressing by the pressing unit 23 started. Furthermore, the mounting device 1 stops pressing by the pressing unit 23 when a predetermined time has elapsed since heating by the first heater 12 and the second heater 25 stopped.

[0093] In this way, the mounting device 1 heats the first heating area A21, the second heating area A22, and the third heating area A23, which are divided based on the first area Aβ1, the second area Aβ2, and the third area Aβ3 of the integrated package β, at temperatures based on the thermal conductivity of the integrated package β in the pressing direction, thereby suppressing changes in the temperature distribution of the substrate α due to the influence of not only the shape of the integrated package β but also the internal structure of the integrated package β. This suppresses temperature variations when heating the integrated package β, which has non-uniform thermal conductivity, and suppresses poor connection of the integrated package β to the substrate α.

[0094] In the mounting device 1, when the integrated package β is heated by the first heating area A21, the second heating area A22, and the third heating area A23 of the second heater 25 and the substrate α is not heated by the first heater 12, it is necessary to increase the temperature of the second heater 25 in order to heat the bumps β6 that are distant from the second heater 25. In this case, the second attachment 26 heated by the second heater 25 may experience a thermal shock inside the attachment due to an increase in the temperatures of the first heating area A21, the second heating area A22, and the third heating area A23 of the second heater 25 and the temperature difference between the areas, which may cause distortion of the second attachment.

[0095] Furthermore, when the integrated package β is heated by the second heater 25 and the substrate α is heated to a predetermined temperature by the first heater 12, which is a constant heater that constantly heats the substrate α, the flux, resin adhesive, etc. applied to the electrodes of the substrate α may be altered by the heat. Furthermore, when the substrate α is heated at a temperature at which the flux, resin adhesive, etc. applied to the substrate α are not altered, it takes time for the bumps β6 to fuse the substrate α and the integrated package β, reducing production efficiency.

[0096] Therefore, by using the first heater 12, which is a pulse heater with a forced cooling function, to rapidly heat the substrate α to a predetermined temperature for a predetermined time and then rapidly cool it, it is possible to prevent deterioration of the flux, resin adhesive, etc. applied to the substrate α. Also, by heating the bumps β6 with the second heater 12, it is possible to lower the set temperature of the second heater 25 and prevent thermal shock to the second attachment.

[0097] [Embodiment 2] A mounting apparatus 1A according to Embodiment 2 of the present invention will be described below with reference to Figures 1, 11 to 13. Figure 11 is a plan view of a first heater 12A. Figure 12 is a cross-sectional view taken along line XII-XII in Figure 11 and a cross-sectional view of a substrate α and an integrated package β. Figure 13 is a control block diagram of the mounting apparatus 1A.

[0098] In the mounting device 1A, the configurations of the first heater 12A and the second heater 25A are different from the first heater 12 and the second heater 25 of the mounting device 1. In the following embodiments, the same components as those in the first embodiment are denoted by the same reference numerals and their description is omitted, and only the parts that are different from the first embodiment will be described.

[0099] 1, the mounting apparatus 1A has a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 13). The stage unit 10 supports a first heater 12A, which is a first heating section, and a first attachment 13. The pickup unit 20 supports a pressing unit 23, a second heater 25A, and a second attachment 26.

[0100] 12, the first heater 12A, which is the first heating unit, heats the substrate α via the first attachment 13. The first heater 12A is, for example, a constant heater having a ceramic housing. The first heater 12A is fixed to the stage mounting surface 10a of the stage unit 10. The first heater 12A is disposed with its heating surface facing in the Z direction. The first heater 12A is configured to be movable integrally with the stage unit 10. The first heater 12A has multiple heating regions.

[0101] The second heater 25A, which is the second heating section, heats the integrated package β via the second attachment 26. The second heater 25A is, for example, a constant heater having a ceramic housing. The second heater 25A is fixed to the pressing unit mounting surface 23a. The second heater 25A is disposed with its heating surface facing the first attachment 13. The second heater 25A is configured to be movable integrally with the pressing unit 23. The second heater 25A has multiple heating regions. The amount of heat generated per unit time and per unit area on the heating surface of the second heater 25A is equal at all positions. In other words, the second heater 25A heats the entire heating surface equally.

[0102] 13, the control device 30A is configured to be able to output a heat generation amount control signal to the second heater 25 to cause it to generate heat at a first heat generation amount C1. The control device 30A is configured to be able to output a heat generation amount control signal to the multiple heating regions of the first heater 12A to cause them to generate heat at a predetermined heat generation amount.

[0103] <Heating Areas of First Heating Unit> The first heating area A11, second heating area A12, and third heating area A13 of the first heater 12A will be described with reference to Figure 12. The first heater 12A has a shape that overlaps at least a portion of the integrated package β placed on the substrate α when viewed in the pressing direction while the substrate α is held in a predetermined position on the first attachment 13. In this embodiment, the first heater 12A overlaps the entire integrated package β when viewed in the pressing direction. The first heater 12A is also configured to be able to withstand the force applied to the integrated package β by the pressing unit 23.

[0104] The heating area of ​​the first heater 12A is divided into multiple heating areas. The first heater 12A has, as the multiple heating areas, a first heating area A11, a second heating area A12, and a third heating area A13, which are determined based on the distribution of thermal conductivity in the pressing direction of the integrated package β. The first heating area A11, the second heating area A12, and the third heating area A13 are configured so that the heat generation amount per unit time and per unit area can be independently changed. The first heating area A11 generates heat at a first heating area heat generation amount C11 (see FIG. 13), which is the heat generation amount per unit time and per unit area. The second heating area A12 generates heat at a second heating area heat generation amount C12 (see FIG. 13), which is the heat generation amount per unit time and per unit area. The third heating area A13 generates heat at a third heating area heat generation amount C13 (see FIG. 13), which is the heat generation amount per unit time and per unit area.

[0105] The first heated region A11 overlaps with at least a portion of the first region Aβ1 of the aggregate package β when viewed in the pressing direction. The second heated region A12 overlaps with at least a portion of the second region Aβ2 of the aggregate package β when viewed in the pressing direction. The third heated region A13 overlaps with the third region Aβ3 when viewed in the pressing direction. In this embodiment, the first heated region A11 overlaps with the entire first region Aβ1 of the aggregate package β when viewed in the pressing direction and has substantially the same shape as the first region Aβ1. In this embodiment, the second heated region A12 overlaps with the entire second region Aβ2 of the aggregate package β when viewed in the pressing direction and has substantially the same shape as the second region Aβ2. In this embodiment, the third heated region A13 overlaps with the entire third region Aβ3 of the aggregate package β when viewed in the pressing direction.

[0106] 13, the first heating area A21, the second heating area A12, and the third heating area A13 are electrically connected to the control device 30A. The first heating area A11 is configured to generate heat, for example, at a first heating area heat generation amount C11, based on a heat generation control signal from the control device 30A. The second heating area A12 is configured to generate heat, for example, at a second heating area heat generation amount C12, based on a heat generation control signal from the control device 30A. The third heating area A13 is configured to generate heat, for example, at a third heating area heat generation amount C13, based on a heat generation control signal from the control device 30A.

[0107] Next, the setting of the heating amounts of the first heating area A11, the second heating area A12, and the third heating area A13 will be described with reference to Fig. 14. Fig. 14 is a partial cross-sectional view of the mounting device 1A and the jig T in a state in which the jig T is held by the mounting device 1A according to the second embodiment of the present invention. The heat values ​​of the first heating area A11, the second heating area A12, and the third heating area A13 are determined by temperature measurement using the jig T. Note that the minimum temperature of the first heater 12A is higher than the temperature of the second heater 25A.

[0108] 14, in the jig T, the first heating area A11, the second heating area A12, and the third heating area A13 heat each portion of the substrate α to different temperatures, thereby adjusting the amount of heat transferred from the substrate α to the integrated package β. This changes the temperature between the substrate α and the integrated package β of the jig T. Therefore, the first heater 12A can adjust the temperature between the substrate α and the integrated package β by adjusting the heat generation amount for each heating area.

[0109] The first heating area heat generation amount C11, the second heating area heat generation amount C12, and the third heating area heat generation amount C13 of the first heater 12A are determined to be heat generation amounts such that the temperature of the first area Aβ1 detected by the first jig temperature sensor γ1 of the jig T, the temperature of the second area Aβ2 detected by the second jig temperature sensor γ2, and the temperature of the third area Aβ3 detected by the third jig temperature sensor γ3 are within a predetermined range.

[0110] The jig T, while mounted on the first attachment 13 of the mounting device 1, is pressed by the pressing unit 23 via the second attachment 26. Furthermore, the jig T is heated by the second heater 25, which generates heat at a second heat generation amount C2 (see FIG. 13 ), and is also heated by the first heating area A11, the second heating area A12, and the third heating area A13 of the first heater 12A. At this time, the first heating area A11, the second heating area A12, and the third heating area A13 generate heat at a first heat generation amount C1. The amount of heat transferred from the portion of the substrate α heated by the first heating area A11 to the first area Aβ1 is greater than the amount of heat transferred from the portions of the substrate α heated by the other heating areas to the integrated package β. Furthermore, the amount of heat transferred from the portion of the substrate α heated by the third heating area A13 to the third area Aβ3 is less than the amount of heat transferred from the portions of the substrate α heated by the other heating areas to the integrated package β.

[0111] The amount of heat transferred from the first heating region A11 to the portion of the substrate α overlapping the first region Aβ1, which has the highest thermal conductivity in the pressing direction, increases due to heating by the first heating region A11, which generates heat at a first heating region heat generation amount C11 (see FIG. 13 ) higher than the first heat generation amount C1. Therefore, the temperature of the portion of the substrate α overlapping the first region Aβ1 in the pressing direction is likely to rise because the difference between the amount of heat transferred from the substrate α to the integrated package β and the amount of heat transferred from the first heating region A11 to the substrate α increases. Furthermore, the amount of heat transferred from the third heating region A13 to the portion of the substrate α overlapping the third region Aβ3, which has the lowest thermal conductivity in the pressing direction, decreases due to heating by the third heating region A13, which generates heat at a third heating region heat generation amount C13 (see FIG. 13 ) lower than the first heat generation amount C1. Therefore, the temperature of the portion of the substrate α overlapping with the third region Aβ3 in the pressing direction is less likely to rise because the difference between the amount of heat transferred from the substrate α to the integrated package β and the amount of heat transferred from the third heating region A13 to the substrate α is small. As a result, the first heating region A11, the second heating region A12, and the third heating region A13 can adjust the temperature between the substrate α and the integrated package β within a predetermined range.

[0112] The mounting device 1A configured in this manner increases the balance between the amount of heat transferred from the first heating region A11 to the portion of the substrate α overlapping with the first region Aβ1 and the amount of heat transferred from the substrate α to the first region Aβ1, as viewed in the pressing direction. Furthermore, the mounting device 1 reduces the balance between the amount of heat transferred from the third heating region A13 to the portion of the substrate α overlapping with the third region Aβ3, as viewed in the pressing direction, and the amount of heat transferred from the substrate α to the third region Aβ3. In this way, the mounting device 1 adjusts the heat values ​​of the first heating region A21, the second heating region A22, and the third heating region A23 based on the distribution of the thermal conductivity of the integrated package β in the pressing direction, thereby suppressing variations in the temperature distribution between the substrate α and the integrated package β and suppressing poor connection of the integrated package β to the substrate α.

[0113] [Embodiment 3] A mounting apparatus 1B according to a third embodiment of the present invention will be described below with reference to Figures 15 and 16. Figure 15 is a partial cross-sectional view of the mounting apparatus 1B according to the third embodiment of the present invention, in which an integrated package β is placed on a substrate α by the mounting apparatus 1B. Figure 16 is a control block diagram of the mounting apparatus 1B. The mounting apparatus 1B differs from the mounting apparatus 1 in that a first attachment 13B has a first temperature sensor 27a, a second temperature sensor 27b, and a third temperature sensor 27c.

[0114] <Configuration of Mounting Apparatus 1B> As shown in FIG. 15, the mounting apparatus 1B has a stage unit 10, a pickup unit 20, and a control device 30B (see FIG. 16).

[0115] The stage unit 10 supports a first heater 12, which is a first heating unit, and a first attachment 13B.

[0116] The first attachment 13B has a first temperature sensor 27a, a second temperature sensor 27b, and a third temperature sensor 27c. When viewed in the pressing direction, the first temperature sensor 27a is positioned to overlap a first region Aβ1 of the integrated package β disposed on the substrate α held in a predetermined position on the first attachment 13B. When viewed in the pressing direction, the second temperature sensor 27b is positioned to overlap a second region Aβ2 of the integrated package β disposed on the substrate α. When viewed in the pressing direction, the third temperature sensor 27c is positioned to overlap a third region Aβ3 of the integrated package β disposed on the substrate α.

[0117] The first temperature sensor 27a can measure the temperature of the portion of the substrate α that overlaps with the first region Aβ1 when viewed in the pressing direction. The second temperature sensor 27b can measure the temperature of the portion of the substrate α that overlaps with the second region Aβ2 when viewed in the pressing direction. The third temperature sensor 27c can measure the temperature of the portion of the substrate α that overlaps with the third region Aβ3 when viewed in the pressing direction.

[0118] As shown in FIG. 16, the control device 30B stores various programs and data for controlling the operation of the second heater 25 based on the temperatures detected by the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c.

[0119] The control device 30B is electrically connected to the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c.

[0120] The control device 30B is configured to be able to output a temperature control signal to the first heating area A21 based on the temperature detected by the first temperature sensor 27a. The control device 30B is configured to be able to output a temperature control signal to the second heating area A22 based on the temperature detected by the second temperature sensor 27b. The control device 30B is configured to be able to output a temperature control signal to the third heating area A23 based on the temperature detected by the third heating area A23.

[0121] When setting the heating amounts of the first heating area A21, the second heating area A22, and the third heating area A23, the mounting device 1B can set the first heating area heat generation amount C21, the second heating area heat generation amount C22, and the third heating area heat generation amount C23 based on the detected temperatures of the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c (see Figure 16) instead of the first jig temperature sensor γ1 (see Figure 7), the second jig temperature sensor γ2 (see Figure 7), and the third jig temperature sensor γ3 (see Figure 7) of the jig T.

[0122] Furthermore, the mounting device 1B can adjust the heat generation amounts of the first heating area A21, the second heating area A22, and the third heating area A23 based on the temperatures detected by the first temperature sensor 27 a, the second temperature sensor 27 b, and the third temperature sensor 27 c. When mounting the integrated package β on the substrate α, if the detected temperature of at least one of the first temperature sensor 27 a, the second temperature sensor 27 b, and the third temperature sensor 27 c is not within a predetermined range, the mounting device 1B can adjust the heat generation amount of at least one of the first heating area A21, the second heating area A22, and the third heating area A23 to bring the detected temperature of the second temperature sensor 27 b and the third temperature sensor 27 c into the predetermined range. This suppresses temperature variations when heating an integrated package with non-uniform thermal conductivity, and suppresses poor connection of the integrated package to the substrate.

[0123] [Other Embodiments] In the above-described first embodiment, the mounting device 1 uniformly heats the first attachment 13 using the first heater 12, which is the first heating unit, and heats the second attachment 26 with different amounts of heat in each region using the first heating region A21, the second heating region A22, and the third heating region A23 of the second heater 25, which is the second heating unit. Also, in the above-described second embodiment, the mounting device 1A heats the first attachment 13 with different amounts of heat in each region using the first heating region A11, the second heating region A12, and the third heating region A13 of the first heater 12, which is the first heating unit, and heats the second attachment 26 uniformly using the second heater 25, which is the second heating unit. However, the first heating unit and the second heating unit may each be configured to have a plurality of heating regions. The mounting device configured in this manner can heat the first attachment 13 with different amounts of heat in different regions by the first heating section, and can heat the second attachment 26 with different amounts of heat in different regions by the second heating section.

[0124] In each of the above-described embodiments, the first heated region A11 and the first heated region A21 have substantially the same shape as the first region Aβ1. The second heated region A12 and the second heated region A22 have substantially the same shape as the second region Aβ2. The third heated region A13 and the third heated region A23 have substantially the same shape as the third region Aβ3. However, each heated region may have any shape as long as it can heat the corresponding region.

[0125] In the above-described embodiments, the mounting devices 1, 1A, and 1B press the substrate α and the integrated package β mounted on the stage unit 10 using the pressing unit 23 that moves relatively toward the stage unit 10. However, the mounting devices may be configured to press the substrate α and the integrated package β by moving the stage unit on which the substrate α and the integrated package β are mounted toward the pressing unit.

[0126] In the above-described embodiments, the mounting apparatuses 1, 1A, and 1B position the integrated package β relative to the substrate α using the pickup unit 20. However, the mounting apparatus may be configured to position the substrate α relative to the integrated package β using a stage.

[0127] Furthermore, in the above-described embodiments, the mounting apparatuses 1, 1A, and 1B pick up the integrated package β using the pickup unit 20. However, the mounting apparatus may be configured to pick up the integrated package β using an external pickup unit and position it relative to the substrate α.

[0128] In the above-described embodiments, the mounting apparatuses 1, 1A, and 1B hold the substrate α with the first attachment 13 and the integrated package β with the second attachment. However, the mounting apparatus may be configured to hold the integrated package β with the first attachment and the substrate α with the second attachment.

[0129] In the above-described first and second embodiments, the mounting apparatuses 1, 1A, and 1B heat the first attachment 13 with the first heater 12, which is a pulse heater, and heat the second attachment 26 with the second heater 25. However, the mounting apparatus may be configured to heat the first attachment and the second attachment with a constant heater.

[0130] Although the embodiments of the present invention have been described above, the above-described embodiments are merely examples for carrying out the present invention. Therefore, the present invention is not limited to the above-described embodiments, and it is possible to appropriately modify the above-described embodiments within the scope of the spirit of the present invention.

[0131] 1, 1A, 1B Mounting device 10 Stage unit 10a Stage mounting surface 11 Stage driving device 12, 12A First heater 13, 13B First attachment 13a First attachment holding surface 20 Pickup unit 20a Pickup unit mounting surface 21 Pickup unit driving device 22 Camera 23 Pressing unit 23a Pressing unit mounting surface 24 Pressing unit driving device 25, 25A Second heater 26 Second attachment 26a Second attachment holding surface 27a First temperature sensor 27b Second temperature sensor 27c Third temperature sensor 30, 30A, 30B Control device T Jig γ1 First jig temperature sensor γ2 Second jig temperature sensor γ3 Third jig temperature sensor α Substrate β Integrated package β1 Package substrate β2 Silicon interposer β3 First semiconductor chip β4 Second semiconductor chip β5 Resin β6 Bump A11 First heating area of ​​first heater A12 Second heating area of ​​first heater A13 Third heating area of ​​first heater A21 First heating area of ​​second heater A22 Second heating area of ​​second heater A23 Third heating area of ​​second heater C1 First heat generation amount C11 Heat generation amount of first heating area C12 Heat generation amount of first heating area C13 Heat generation amount of first heating area C2 Second heat generation amount C21 Heat generation amount of first heating area C22 Heat generation amount of second heating area C23 Heat generation amount of second heating area Aβ1 First area of ​​integrated package Aβ2 Second area of ​​integrated package Aβ3 Third area of ​​integrated package Tβ1, Tβ2, Tβ3 Thermal conductivity of integrated package in pressing direction

Claims

1. A mounting apparatus, comprising: a stage on which at least one of an integrated package in which a plurality of semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted; a pressing portion disposed to face the stage, relatively moving toward the stage, and pressing the substrate and the integrated package; a first attachment supported by the stage and contacting either the substrate or the integrated package from the moving direction of the pressing portion; a second attachment supported by the pressing portion and contacting the other of the substrate and the integrated package from the moving direction of the pressing portion; a first heating portion supported by the stage and heating the first attachment; and a second heating portion supported by the pressing portion and heating the second attachment, wherein at least one of the first heating portion and the second heating portion has a plurality of heating regions based on a distribution of a pressing direction thermal conductivity, which is the thermal conductivity of the integrated package in the pressing direction of the pressing portion, and the plurality of heating regions are configured to generate heat with different heat generation amounts per unit time and per unit area.

2. The mounting apparatus according to claim 1, wherein the plurality of heating regions are configured to overlap with each other for each portion having a pressing direction thermal conductivity within a predetermined range in the integrated package when viewed in the pressing direction.

3. The mounting apparatus according to claim 1 or 2, wherein the plurality of heating regions are configured to generate heat with a heat generation amount proportional to the magnitude of the pressing direction thermal conductivity of the integrated package that overlaps when viewed in the pressing direction.

4. The mounting apparatus according to claim 1 or 2, wherein the first heating portion has a single heating region that generates heat with a predetermined heat generation amount per unit time and per unit area, and heats the substrate with a single heating region that generates heat with a uniform amount of heat through the first attachment, and the second heating portion has the plurality of heating regions, and heats the integrated package with the plurality of heating regions that generate heat with different amounts of heat based on the distribution of the pressing direction thermal conductivity of the integrated package through the second attachment.

5. The mounting apparatus according to claim 4, further comprising a control unit that controls the second heating unit, wherein the first attachment has a temperature sensor at a position overlapping the plurality of heating regions when viewed in the pressing direction, and the control unit controls the calorific value of each of the plurality of heating regions so that the temperature detected by the temperature sensor becomes a temperature within a predetermined range. Mounting apparatus.

6. A method for adjusting the calorific values of a first heating unit that heats a substrate and an integrated package mounted on the substrate from one side in the mounting direction, and a second heating unit that has a plurality of heating regions for heating from the other side in the mounting direction, the method comprising: a first temperature adjustment step of heating the substrate and the integrated package by the first heating unit and a first adjustment heating region that is a heating region whose calorific value is adjusted among the plurality of heating regions of the second heating unit, and adjusting the calorific value of the first adjustment heating region so that the temperature of the region of the substrate overlapping the first adjustment heating region is within a target temperature range when viewed in the mounting direction; a second temperature adjustment step of heating the substrate and the integrated package by the first heating unit and the first adjustment heating region that generates heat with the calorific value adjusted in the first temperature adjustment step, and heating the substrate and the integrated package by the first heating unit and a second adjustment heating region that is a heating region of the second heating unit whose calorific value was not adjusted in the first temperature adjustment step, and adjusting the calorific value of the second adjustment heating region so that the temperature of the region of the substrate overlapping the second adjustment heating region is within a target temperature range when viewed in the mounting direction; and a readjustment step of adjusting the calorific values of the first adjustment heating region and the second adjustment heating region so that the temperature of the region of the substrate overlapping the first adjustment heating region that generates heat with the calorific value adjusted in the first temperature adjustment step and the temperature of the region of the substrate overlapping the second adjustment heating region that generates heat with the calorific value adjusted in the second temperature adjustment step are each within a target temperature range. Adjustment method.

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