Semiconductor device

Abstract

This semiconductor device is provided with a first heat dissipation member, a second heat dissipation member, a semiconductor element, and a sealing resin. The semiconductor element is positioned on one side in a first direction with respect to the first heat dissipation member. The sealing resin covers the semiconductor element. The sealing resin has a first surface facing the side opposite to the side where the semiconductor element is positioned with respect to the first heat dissipation member in the first direction, and a second surface facing one side in a second direction. The first heat dissipation member is exposed from the first surface. The second heat dissipation member is exposed from the second surface.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a semiconductor device including a first semiconductor element, a first lead and a second lead each electrically connected to the first semiconductor element, and a sealing resin covering the first semiconductor element. The first semiconductor element is a switching element such as a MOSFET. The first lead includes a pad to which the first semiconductor element is electrically conductively bonded and a first terminal connected to the pad.

[0003] In the semiconductor device disclosed in Patent Document 1, the pad of the first lead is exposed from the back surface of the sealing resin. This configuration makes it easier for heat generated from the first semiconductor element to be released to the outside via the pad. Here, the larger the current flowing through the first semiconductor element, the greater the amount of heat generated from the first semiconductor element. Therefore, when a larger current is flowing through the first semiconductor element, it is necessary to further improve the heat dissipation performance of the semiconductor device.

[0004] JP 2018-14490 A

[0005] [Summary] An object of the present disclosure is to provide a semiconductor device that is improved over conventional devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can further improve heat dissipation.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a first heat dissipation member and a second heat dissipation member; a semiconductor element located on one side of the first heat dissipation member in a first direction; and a sealing resin covering the semiconductor element. The sealing resin has a first surface facing the opposite side of the first heat dissipation member from the side on which the semiconductor element is located in the first direction, and a second surface facing one side in a second direction perpendicular to the first direction. The first heat dissipation member is exposed from the first surface. The second heat dissipation member is exposed from the second surface.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1, seen through the sealing resin. FIG. 3 is a plan view corresponding to FIG. 1, omitting the sealing resin and seen through the third heat dissipation member. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a left side view of the semiconductor device shown in FIG. 1. FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 2. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 5. FIG. 11 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, seen through the sealing resin. FIG. 12 is a bottom view of the semiconductor device shown in FIG. 11. FIG. 13 is a left side view of the semiconductor device shown in FIG. 11. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 11. FIG. 15 is a plan view of a semiconductor device according to a third embodiment of the present disclosure. FIG. 16 is a plan view corresponding to FIG. 15 , seen through the sealing resin. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16 . FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 16 . FIG. 19 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure, seen through the sealing resin. FIG. 20 is a bottom view of the semiconductor device shown in FIG. 19 . FIG. 21 is a left side view of the semiconductor device shown in FIG. 19 . FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 19 . FIG. 23 is a plan view of a semiconductor device according to a fifth embodiment of the present disclosure, seen through the sealing resin. FIG. 24 is a left side view of the semiconductor device shown in FIG. 23 . FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 23 . FIG. 26 is a plan view of a semiconductor device according to a sixth embodiment of the present disclosure, seen through the sealing resin. Fig. 27 is a bottom view of the semiconductor device shown in Fig. 26. Fig. 28 is a left side view of the semiconductor device shown in Fig. 26. Fig. 29 is a cross-sectional view taken along line XXIX-XXIX in Fig. 26. Fig. 30 is a cross-sectional view taken along line XXX-XXX in Fig. 26.

[0009] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0010] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 10 . The semiconductor device A10 is a surface-mount package. The semiconductor device A10 is used in a power conversion circuit such as an inverter. The semiconductor device A10 includes a semiconductor element 10, a first heat dissipation member 21, a second heat dissipation member 22, a third heat dissipation member 23, a fourth heat dissipation member 24, a first terminal 31, a second terminal 32, a first conductive member 41, a second conductive member 42, and a sealing resin 50. For ease of understanding, FIG. 2 shows the sealing resin 50 in a see-through manner. In FIG. 2, the see-through sealing resin 50 is indicated by an imaginary line (two-dot chain line). For ease of understanding, FIG. 3 omits the sealing resin 50 and shows the third heat dissipation member 23 in a see-through manner. In FIG. 3, the see-through third heat dissipation member 23 is indicated by an imaginary line.

[0011] In the description of the semiconductor device A10, for convenience, the normal direction to a first surface 51 of a sealing resin 50 (described later) will be referred to as the "first direction z." A direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to each of the first direction z and the second direction x will be referred to as the "third direction y."

[0012] As shown in Figures 7 to 9, the sealing resin 50 covers the semiconductor element 10, the first conductive member 41, and the second conductive member 42. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. The sealing resin 50 has a first surface 51, a second surface 52, a third surface 53, a fourth surface 54, a fifth surface 55, and a sixth surface 56.

[0013] 7 and 8 , the first surface 51 faces in the first direction z on the side opposite to the side on which the semiconductor element 10 is located, with the first heat dissipation member 21 as the reference. The third surface 53 faces in the first direction z on the side opposite to the first surface 51. The second surface 52 and the fourth surface 54 face in opposite directions to each other in the second direction x. The fifth surface 55 and the sixth surface 56 face in opposite directions to each other in the third direction y.

[0014] As shown in FIGS. 7 to 9 , the first heat dissipation member 21 has the semiconductor element 10 mounted thereon. The first heat dissipation member 21, the first terminal 31, and the second terminal 32 are obtained from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the first heat dissipation member 21 is made of metal. A portion of the first heat dissipation member 21 protrudes from the sixth surface 56 of the sealing resin 50.

[0015] 3 and 4 , the first heat dissipation member 21 has a mounting surface 211, a first heat dissipation surface 212, a first end surface 213, a plurality of first recesses 214, a third end surface 215, and a plurality of second recesses 216. The mounting surface 211 and the first heat dissipation surface 212 face opposite each other in the first direction z. A portion of the mounting surface 211 is covered with a sealing resin 50. The first heat dissipation surface 212 is exposed from a first surface 51 of the sealing resin 50. The first heat dissipation surface 212 is plated with a material containing tin (Sn).

[0016] As shown in FIGS. 4 and 5 , the first end surface 213 faces the same side as the second surface 52 of the sealing resin 50 in the second direction x. The first end surface 213 is exposed from the second surface 52. Each of the multiple first recesses 214 is recessed from the first end surface 213. The multiple first recesses 214 are arranged along the third direction y. As shown in FIGS. 4 and 6 , the third end surface 215 faces the opposite side to the first end surface 213 in the second direction x. The third end surface 215 is exposed from the fourth surface 54 of the sealing resin 50. Each of the multiple second recesses 216 is recessed from the third end surface 215. The multiple second recesses 216 are arranged along the third direction y. The number of the multiple second recesses 216 is smaller than the number of the multiple first recesses 214.

[0017] As shown in FIGS. 7 to 9 , the semiconductor element 10 is mounted on the mounting surface 211 of the first heat dissipation member 21. The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 10 may be various switching elements, such as a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 10 includes a compound semiconductor substrate. The compound semiconductor substrate includes silicon carbide (SiC). In the description of the semiconductor device A10, the semiconductor element 10 is an n-channel MOSFET.

[0018] As shown in FIGS. 3 and 8, the semiconductor element 10 has a first electrode 11, a second electrode 12, and a gate electrode 13.

[0019] As shown in Figure 8, the first electrode 11 is located on the side facing the mounting surface 211 of the first heat dissipation member 21 in the first direction z. A current corresponding to the power before being converted by the semiconductor element 10 flows through the first electrode 11. In other words, the first electrode 11 corresponds to the drain of the semiconductor element 10. The first electrode 11 is conductively bonded to the mounting surface 211 via a bonding layer 29. This allows the first heat dissipation member 21 to be electrically connected to the first electrode 11. The bonding layer 29 is, for example, solder. Alternatively, the bonding layer 29 may be a sintered metal containing silver (Ag) or the like.

[0020] 3 and 8 , the second electrode 12 is located on the opposite side to the first electrode 11 in the first direction z. A current corresponding to the power converted by the semiconductor element 10 flows through the second electrode 12. In other words, the second electrode 12 corresponds to the source of the semiconductor element 10.

[0021] 3 and 8 , the gate electrode 13 is located on the same side as the second electrode 12 in the first direction z. A gate voltage for driving the semiconductor element 10 is applied to the gate electrode 13. When viewed in the first direction z, the area of ​​the gate electrode 13 is smaller than the area of ​​the second electrode 12.

[0022] As shown in FIG. 3 , the second heat dissipation member 22 is located on one side of the semiconductor element 10 in the second direction x. The second heat dissipation member 22 is made of metal. The metal includes, for example, copper or a copper alloy. As shown in FIG. 3 , the second heat dissipation member 22 overlaps the first heat dissipation member 21 when viewed in the first direction z. As shown in FIG. 5 , the second heat dissipation member 22 overlaps the semiconductor element 10 when viewed in the second direction x. As shown in FIGS. 5 and 9 , the second heat dissipation member 22 is spaced apart from the first heat dissipation member 21.

[0023] As shown in FIGS. 3 to 5 , the second heat dissipation member 22 has a second heat dissipation surface 221, a second end surface 222, and a plurality of first protrusions 223. The second heat dissipation surface 221 faces the same side as the second surface 52 of the sealing resin 50 in the second direction x. The second heat dissipation surface 221 is exposed from the second surface 52. The second heat dissipation surface 221 is plated with tin. The second end surface 222 faces the same side as the first surface 51 of the sealing resin 50 in the first direction z. The second end surface 222 is covered with the sealing resin 50. Each of the plurality of first protrusions 223 protrudes from the second end surface 222. A portion of each of the plurality of first protrusions 223 is individually accommodated in a plurality of first recesses 214 of the first heat dissipation member 21. Each of the plurality of first protrusions 223 is exposed from the first surface 51.

[0024] 10 , the sealing resin 50 has intervening portions 57 accommodated in each of the multiple first recesses 214 of the first heat dissipation member 21. Each of the multiple first protrusions 223 of the second heat dissipation member 22 is in contact with the intervening portions 57. The intervening portions 57 prevent the multiple first protrusions 223 from contacting the first heat dissipation member 21.

[0025] As shown in FIG. 3 , the fourth heat dissipation member 24 is located on the opposite side of the semiconductor element 10 from the second heat dissipation member 22 in the second direction x. The fourth heat dissipation member 24 is made of metal. The metal includes, for example, copper or a copper alloy. As shown in FIG. 3 , the fourth heat dissipation member 24 overlaps the first heat dissipation member 21 when viewed in the first direction z. As shown in FIG. 6 , the fourth heat dissipation member 24 overlaps the semiconductor element 10 when viewed in the second direction x. As shown in FIGS. 6 and 9 , the fourth heat dissipation member 24 is spaced apart from the first heat dissipation member 21.

[0026] As shown in FIGS. 3 , 4 , and 6 , the fourth heat dissipation member 24 has a fourth heat dissipation surface 241, a fourth end surface 242, and a plurality of second protrusions 243. The fourth heat dissipation surface 241 faces the same side as the fourth surface 54 of the sealing resin 50 in the second direction x. The fourth heat dissipation surface 241 is exposed from the fourth surface 54. The dimension of the fourth heat dissipation surface 241 in the third direction y is smaller than the dimension of the second heat dissipation surface 221 of the second heat dissipation member 22 in the third direction y. The fourth heat dissipation surface 241 is plated with tin. The fourth end surface 242 faces the same side as the first surface 51 of the sealing resin 50 in the first direction z. The fourth end surface 242 is covered by the sealing resin 50. Each of the plurality of second protrusions 243 protrudes from the fourth end surface 242. A portion of each of the multiple second protrusions 243 is individually housed in the multiple second recesses 216 of the first heat dissipation member 21. Each of the multiple second protrusions 243 is exposed from the first surface 51. The configuration of the multiple second protrusions 243 and the multiple second recesses 216 is similar to the configuration of the multiple first protrusions 223 of the second heat dissipation member 22 and the multiple first recesses 214 of the first heat dissipation member 21 shown in FIG.

[0027] 2 and 7 , the first terminal 31 is located on one side of the first heat dissipation member 21 in the third direction y. As shown in Fig. 4 , the first terminal 31 is exposed from a first surface 51 of the sealing resin 50. A portion of the first terminal 31 protrudes from a fifth surface 55 of the sealing resin 50. The surface of the first terminal 31 exposed from the sealing resin 50 is plated with a composition containing tin.

[0028] As shown in FIGS. 2 and 7 , the first conductive member 41 is conductively bonded to the second electrode 12 of the semiconductor element 10 and the first terminal 31. This electrically connects the first terminal 31 to the second electrode 12. The first conductive member 41 is a metal clip. The first conductive member 41 includes, for example, copper or a copper alloy. The first conductive member 41 has a main portion 411, a first bonding portion 412, and a second bonding portion 413. The main portion 411 faces the third heat dissipation member 23 in the first direction z. The main portion 411 extends in the third direction y. The main portion 411 has a support surface 411A that faces the same side as the third surface 53 of the sealing resin 50 in the first direction z. The first bonding portion 412 is located on one side of the main portion 411 in the third direction y and is connected to the main portion 411. The first bonding portion 412 is conductively bonded to the second electrode 12 via the bonding layer 29. The second bonding portion 413 is located on the opposite side of the main portion 411 from the first bonding portion 412, and is connected to the main portion 411. The first bonding portion 412 is conductively bonded to the first terminal 31 via the bonding layer 29.

[0029] 2 and 8 , the second terminal 32 is located on the same side as the first terminal 31 with respect to the first heat dissipation member 21 in the third direction y. The second terminal 32 is located adjacent to the first terminal 31 in the second direction x. As shown in FIG. 4 , the second terminal 32 is exposed from the first surface 51 of the sealing resin 50. A portion of the second terminal 32 protrudes from the fifth surface 55 of the sealing resin 50. The surface of the second terminal 32 exposed from the sealing resin 50 is plated with a composition containing tin.

[0030] 2 , the second conductive member 42 is conductively bonded to the gate electrode 13 of the semiconductor element 10 and the second terminal 32. This allows the second terminal 32 to be electrically connected to the gate electrode 13. The second conductive member 42 is a wire. The second conductive member 42 contains, for example, either aluminum (Al) or gold (Au).

[0031] As shown in Figures 7 to 9, the third heat dissipation member 23 is located on the opposite side of the semiconductor element 10 from the first heat dissipation member 21 in the first direction z. As shown in Figure 2, the third heat dissipation member 23 overlaps the semiconductor element 10 when viewed in the first direction z. The gate electrode 13 of the semiconductor element 10 is spaced apart from the third heat dissipation member 23 when viewed in the first direction z. The third heat dissipation member 23 is made of metal. The metal includes, for example, copper or a copper alloy. The third heat dissipation member 23 is connected to the second heat dissipation member 22 and the fourth heat dissipation member 24. Therefore, the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24 are integrated.

[0032] 7 to 9, the third heat dissipation member 23 has a third heat dissipation surface 231 that faces the same side as the third surface 53 of the sealing resin 50 in the first direction z. As shown in Fig. 1, the third heat dissipation surface 231 is exposed from the third surface 53. The third heat dissipation surface 231 is plated with a composition containing tin.

[0033] 7 , the third heat dissipation member 23 is conductively joined to the support surface 411A of the main portion 411 of the first conductive member 41 via the bonding layer 29. Alternatively, the third heat dissipation member 23 may be conductively joined to the support surface 411A by welding without the bonding layer 29. As a result, the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24 are supported by the first conductive member 41. The first conductive member 41 is electrically connected to the second electrode 12 of the semiconductor element 10. Therefore, a voltage equal to the voltage applied to the second electrode 12 is applied to the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24.

[0034] Next, the effects of the semiconductor device A10 will be described.

[0035] The semiconductor device A10 includes a first heat dissipation member 21, a second heat dissipation member 22, a semiconductor element 10, and a sealing resin 50. The sealing resin 50 has a first surface 51 facing the opposite side of the first heat dissipation member 21 from the side on which the semiconductor element 10 is located in the first direction z, and a second surface 52 facing one side in the second direction x. The first heat dissipation member 21 is exposed from the first surface 51. The second heat dissipation member 22 is exposed from the second surface 52. With this configuration, the first heat dissipation member 21 and the second heat dissipation member 22 are exposed from the first surface 51 and the second surface 52, which have different normal directions, respectively. As a result, heat generated from the semiconductor element 10 is efficiently dissipated to the outside via the first heat dissipation member 21 and the second heat dissipation member 22. Therefore, with this configuration, the semiconductor device A10 can achieve further improved heat dissipation.

[0036] The semiconductor device A10 further includes a third heat dissipation member 23. The sealing resin 50 has a third surface 53 facing the opposite side to the first surface 51 in the first direction z. The third heat dissipation member 23 is exposed from the third surface 53. With this configuration, heat generated from the semiconductor element 10 can be efficiently dissipated to the outside via the third heat dissipation member 23 in addition to the first heat dissipation member 21 and the second heat dissipation member 22.

[0037] The semiconductor device A10 further includes a fourth heat dissipation member 24. The sealing resin 50 has a fourth surface 54 facing the opposite side to the second surface 52 in the second direction x. The fourth heat dissipation member 24 is exposed from the fourth surface 54. With this configuration, heat generated from the semiconductor element 10 can be efficiently dissipated to the outside via the fourth heat dissipation member 24 in addition to the first heat dissipation member 21, the second heat dissipation member 22, and the third heat dissipation member 23.

[0038] The third heat dissipation member 23 is connected to the second heat dissipation member 22 and the fourth heat dissipation member 24. By adopting this configuration, it is possible to reduce unevenness in heat distribution in each of the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24.

[0039] The first electrode 11 of the semiconductor element 10 is conductively joined to the first heat dissipation member 21. The second heat dissipation member 22 and the fourth heat dissipation member 24 are each spaced apart from the first heat dissipation member 21. This configuration ensures mutual insulation between the first heat dissipation member 21 and the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24, even when the first heat dissipation member 21 is used as a conductive member.

[0040] When viewed in the first direction z, the second heat dissipation member 22 overlaps the first heat dissipation member 21. The first heat dissipation member 21 has a first end face 213 exposed from the second surface 52 of the sealing resin 50. The second heat dissipation member 22 has a second end face 222 covered by the sealing resin 50. With this configuration, mutual insulation between the first heat dissipation member 21 and the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24 is ensured by the sealing resin 50, while an increase in the dimension of the semiconductor device A10 in the second direction x can be suppressed.

[0041] The first heat dissipation member 21 has a first recess 214 recessed from a first end face 213. The second heat dissipation member 22 has a first protrusion 223 protruding from a second end face 222. A portion of the first protrusion 223 is housed in the first recess 214. This configuration makes it possible to position the second heat dissipation member 22 relative to the first heat dissipation member 21.

[0042] The sealing resin 50 has an intervening portion 57 accommodated in the first recess 214 of the first heat dissipation member 21. The first protruding portion 223 of the second heat dissipation member 22 is in contact with the intervening portion 57. With this configuration, the sealing resin 50 ensures mutual insulation between the first heat dissipation member 21 and the first protruding portion 223.

[0043] The first convex portion 223 of the second heat dissipation member 22 is exposed from the first surface 51 of the sealing resin 50. By adopting this configuration, when forming the sealing resin 50 in the manufacture of the semiconductor device A10, the second heat dissipation member 22 in addition to the first heat dissipation member 21 can be supported by a mold.

[0044] The semiconductor device A10 further includes a first conductive member 41 conductively joined to the second electrode 12 of the semiconductor element 10 and the first terminal 31. The third heat dissipation member 23 is conductively joined to the first conductive member 41. With this configuration, the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24 can be supported by the first conductive member 41. In this case, mutual insulation between the first heat dissipation member 21 and the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24 is ensured, so that a configuration can be achieved in which current can flow from the first conductive member 41 to the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24 without any problems.

[0045] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 11 to 14. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 11 shows the sealing resin 50 through which light is transmitted. In Figure 11, the transparent sealing resin 50 is shown by imaginary lines.

[0046] In the semiconductor device A20, the configurations of the first heat dissipation member 21, the fourth heat dissipation member 24, and the first conductive member 41 are different from those of the semiconductor device A10.

[0047] 12 , the number of the second recesses 216 of the first heat dissipation member 21 is equal to the number of the first recesses 214 of the first heat dissipation member 21. The number of the second protrusions 243 of the fourth heat dissipation member 24 is equal to the number of the first protrusions 223 of the second heat dissipation member 22. The dimension in the third direction y of the fourth heat dissipation surface 241 of the fourth heat dissipation member 24 is equal to the dimension in the third direction y of the second heat dissipation surface 221 of the second heat dissipation member 22.

[0048] 11 and 14 , the first conductive member 41 has a protrusion 414. The protrusion 414 protrudes from the support surface 411A of the main portion 411. The protrusion 414 extends in the second direction x. The third heat dissipation member 23 is in contact with the protrusion 414.

[0049] Next, the effects of the semiconductor device A20 will be described.

[0050] The semiconductor device A20 includes a first heat dissipation member 21, a second heat dissipation member 22, a semiconductor element 10, and a sealing resin 50. The sealing resin 50 has a first surface 51 facing the opposite side of the first heat dissipation member 21 in the first direction z from the side on which the semiconductor element 10 is located, and a second surface 52 facing one side in the second direction x. The first heat dissipation member 21 is exposed from the first surface 51. The second heat dissipation member 22 is exposed from the second surface 52. Therefore, with this configuration, the semiconductor device A20 can also achieve further improvement in heat dissipation. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0051] In the semiconductor device A20, the dimension in the third direction y of the fourth heat dissipation surface 241 of the fourth heat dissipation member 24 is equal to the dimension in the third direction y of the second heat dissipation surface 221 of the second heat dissipation member 22. By adopting this configuration, the area of ​​the fourth heat dissipation member 24 exposed from the sealing resin 50 is increased, and therefore the heat dissipation performance of the semiconductor device A20 can be improved compared to the semiconductor device A10.

[0052] In the semiconductor device A20, the first conductive member 41 has a protrusion 414 protruding from the support surface 411A of the main portion 411. The third heat dissipation member 23 is conductively joined to the support surface 411A and is in contact with the protrusion 414. With this configuration, when the third heat dissipation member 23 is conductively joined to the first conductive member 41, the protrusion 414 restricts misalignment of the third heat dissipation member 23 in the third direction y. This reduces misalignment of the third heat dissipation member 23 with respect to the first conductive member 41.

[0053] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 15 to 18. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 16 shows the sealing resin 50 in perspective. In Figure 16, the transparent sealing resin 50 is shown by imaginary lines.

[0054] In the semiconductor device A30, the configurations of the third heat dissipation member 23 and the first conductive member 41 are different from those of the semiconductor device A10.

[0055] 16 to 18 , the third heat dissipation member 23 is integrated with the main portion 411 of the first conductive member 41. The third heat dissipation member 23 includes an element that also serves as the main portion 411 and an element that extends outward beyond the main portion 411 in a direction perpendicular to the first direction z. As shown in FIG. 15 , the main portion 411 is exposed from the third surface 53 of the sealing resin 50.

[0056] Next, the effects of the semiconductor device A30 will be described.

[0057] The semiconductor device A30 includes a first heat dissipation member 21, a second heat dissipation member 22, a semiconductor element 10, and a sealing resin 50. The sealing resin 50 has a first surface 51 facing the opposite side of the first heat dissipation member 21 in the first direction z from the side on which the semiconductor element 10 is located, and a second surface 52 facing one side in the second direction x. The first heat dissipation member 21 is exposed from the first surface 51. The second heat dissipation member 22 is exposed from the second surface 52. Therefore, with this configuration, the semiconductor device A30 can also achieve further improvement in heat dissipation. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0058] In the semiconductor device A30, the third heat dissipation member 23 is integral with the first conductive member 41. By adopting this configuration, the dimension of the semiconductor device A30 in the first direction z can be reduced.

[0059] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 19 to 22. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 19 shows the sealing resin 50 through which light is transmitted. In Figure 19, the transmitted sealing resin 50 is shown by imaginary lines.

[0060] In the semiconductor device A40, the configurations of the first heat dissipation member 21, the second heat dissipation member 22, and the fourth heat dissipation member 24 are different from those of the semiconductor device A10.

[0061] 19 and 20 , the first heat dissipation member 21 does not have a plurality of first recesses 214 and a plurality of third end faces 215. As shown in Fig. 22 , the first end face 213 and the third end face 215 of the first heat dissipation member 21 are covered with the sealing resin 50.

[0062] 19 , when viewed in the first direction z, the second heat dissipation member 22 is spaced apart from the first heat dissipation member 21. As shown in FIGS. 20 and 21 , the second heat dissipation member 22 does not have a plurality of first protrusions 223. As shown in FIGS. 20 and 22 , the second end surface 222 of the second heat dissipation member 22 is exposed from the first surface 51 of the sealing resin 50.

[0063] 19 , when viewed in the first direction z, the fourth heat dissipation member 24 is spaced apart from the first heat dissipation member 21. As shown in Fig. 20 , the fourth heat dissipation member 24 does not have the multiple second protrusions 243. As shown in Fig. 20 and 22 , a fourth end surface 242 of the fourth heat dissipation member 24 is exposed from the first surface 51 of the sealing resin 50.

[0064] Next, the effects of the semiconductor device A40 will be described.

[0065] The semiconductor device A40 includes a first heat dissipation member 21, a second heat dissipation member 22, a semiconductor element 10, and a sealing resin 50. The sealing resin 50 has a first surface 51 that faces the opposite side of the first heat dissipation member 21 in the first direction z from the side on which the semiconductor element 10 is located, and a second surface 52 that faces one side in the second direction x. The first heat dissipation member 21 is exposed from the first surface 51. The second heat dissipation member 22 is exposed from the second surface 52. Therefore, with this configuration, the semiconductor device A40 can also achieve further improvement in heat dissipation. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0066] In the semiconductor device A40, the second heat dissipation member 22 and the fourth heat dissipation member 24 are each spaced apart from the first heat dissipation member 21 when viewed in the first direction z. The first end face 213 and the third end face 215 of the first heat dissipation member 21 are covered with the sealing resin 50. This configuration allows the second heat dissipation member 22 and the fourth heat dissipation member 24 to be more reliably spaced apart from the first heat dissipation member 21. As a result, the sealing resin 50 ensures mutual insulation between the first heat dissipation member 21 and the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24.

[0067] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 23 to 25. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 23 shows the sealing resin 50 in perspective. In Figure 23, the transparent sealing resin 50 is shown by imaginary lines.

[0068] In the semiconductor device A50, the configurations of the first heat dissipation member 21, the second heat dissipation member 22, and the fourth heat dissipation member 24 are different from those of the semiconductor device A40 described above.

[0069] As shown in Fig. 23 , when viewed in the first direction z, the second heat dissipation member 22 and the fourth heat dissipation member 24 each overlap the first heat dissipation member 21. As shown in Fig. 23 and 25 , a first end surface 213 of the first heat dissipation member 21 is exposed from the second surface 52 of the sealing resin 50. As shown in Fig. 25 , a third end surface 215 of the first heat dissipation member 21 is exposed from the fourth surface 54 of the sealing resin 50. The second end surface 222 of the second heat dissipation member 22 and the fourth end surface 242 of the fourth heat dissipation member 24 are covered with the sealing resin 50.

[0070] Next, the effects of the semiconductor device A50 will be described.

[0071] The semiconductor device A50 includes a first heat dissipation member 21, a second heat dissipation member 22, a semiconductor element 10, and a sealing resin 50. The sealing resin 50 has a first surface 51 facing the opposite side of the first heat dissipation member 21 in the first direction z from the side on which the semiconductor element 10 is located, and a second surface 52 facing one side in the second direction x. The first heat dissipation member 21 is exposed from the first surface 51. The second heat dissipation member 22 is exposed from the second surface 52. Therefore, with this configuration, the semiconductor device A50 can also achieve further improvement in heat dissipation. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0072] In the semiconductor device A50, when viewed in the first direction z, the second heat dissipation member 22 and the fourth heat dissipation member 24 each overlap the first heat dissipation member 21. A second end surface 222 of the second heat dissipation member 22 and a fourth end surface 242 of the fourth heat dissipation member 24 are covered with sealing resin 50. This configuration allows the second heat dissipation member 22 and the fourth heat dissipation member 24 to be separated from the first heat dissipation member 21. As a result, the sealing resin 50 ensures mutual insulation between the first heat dissipation member 21 and the second heat dissipation member 22, the third heat dissipation member 23, and the fourth heat dissipation member 24.

[0073] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 26 to 30. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 26 shows the sealing resin 50 in perspective. In Figure 26, the transparent sealing resin 50 is shown by imaginary lines.

[0074] The semiconductor device A60 differs from the semiconductor device A10 in the configurations of the first heat dissipation member 21, the second heat dissipation member 22, and the fourth heat dissipation member 24, and in the additional inclusion of a third terminal 33. The configurations of the second heat dissipation member 22 and the fourth heat dissipation member 24 are similar to those of the semiconductor device A50 described above.

[0075] As shown in Figures 26, 27, and 30, the first heat dissipation member 21 includes an insulating layer 21A, a conductive layer 21B, a heat dissipation layer 21C, a first support layer 21D, and a second support layer 21E. The first heat dissipation member 21 is a substrate formed, for example, by active metal brazing (AMB). The insulating layer 21A is made of ceramics containing silicon nitride (AlN), for example. The conductive layer 21B, the heat dissipation layer 21C, the first support layer 21D, and the second support layer 21E include a metal, for example, copper. The conductive layer 21B and the heat dissipation layer 21C are located on opposite sides of the insulating layer 21A. The conductive layer 21B and the heat dissipation layer 21C are bonded to the insulating layer 21A. The conductive layer 21B includes a mounting surface 211. The heat dissipation layer 21C includes a first heat dissipation surface 212. Therefore, the first electrode 11 of the semiconductor element 10 is conductively bonded to the conductive layer 21B via the bonding layer 29. The heat dissipation layer 21C is exposed from the first surface 51 of the sealing resin 50. The end of the insulating layer 21A is sandwiched between the sealing resin 50 on both sides in the first direction z.

[0076] 26 and 30 , the first support layer 21D and the second support layer 21E are located on the same side as the conductive layer 21B with respect to the insulating layer 21A. The first support layer 21D and the second support layer 21E are located on opposite sides of the semiconductor element 10 in the second direction x. A second end surface 222 of the second heat dissipation member 22 is joined to the first support layer 21D via a bonding layer 29. A fourth end surface 242 of the fourth heat dissipation member 24 is joined to the second support layer 21E via a bonding layer 29.

[0077] 29 , the third terminal 33 is conductively bonded to the conductive layer 21B via the bonding layer 29. This allows the third terminal 33 to be electrically connected to the first electrode 11 of the semiconductor element 10. The third terminal 33 contains the same metal as the metal contained in each of the first terminal 31 and the second terminal 32. A portion of the third terminal 33 protrudes from the sixth surface 56 of the sealing resin 50.

[0078] Next, the effects of the semiconductor device A60 will be described.

[0079] The semiconductor device A60 includes a first heat dissipation member 21, a second heat dissipation member 22, a semiconductor element 10, and a sealing resin 50. The sealing resin 50 has a first surface 51 that faces the opposite side of the first heat dissipation member 21 in the first direction z from the side on which the semiconductor element 10 is located, and a second surface 52 that faces one side in the second direction x. The first heat dissipation member 21 is exposed from the first surface 51. The second heat dissipation member 22 is exposed from the second surface 52. Therefore, with this configuration, the semiconductor device A60 can also achieve further improvement in heat dissipation. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A60 achieves the same effects as the semiconductor device A10.

[0080] In the semiconductor device A60, the first heat dissipation member 21 includes an insulating layer 21A, a conductive layer 21B, a heat dissipation layer 21C, a first support layer 21D, and a second support layer 21E. The first electrode 11 of the semiconductor element 10 is conductively bonded to the conductive layer 21B. The second heat dissipation member 22 is bonded to the first support layer 21D. The fourth heat dissipation member 24 is bonded to the second support layer 21E. With this configuration, the first heat dissipation member 21 ensures mutual insulation between the first terminal 31 and the third terminal 33.

[0081] The present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the present disclosure can be freely designed in various ways. In the present disclosure, the semiconductor element 10 can be various elements such as various switching elements and various diodes such as Schottky barrier diodes. Therefore, the type of element of the semiconductor element 10 is not limited to the above-described embodiment.

[0082] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first heat dissipation member and a second heat dissipation member; a semiconductor element located on one side of the first heat dissipation member in a first direction; and a sealing resin covering the semiconductor element, wherein the sealing resin has a first surface facing an opposite side to the side on which the semiconductor element is located with respect to the first heat dissipation member in the first direction, and a second surface facing an opposite side in a second direction orthogonal to the first direction, wherein the first heat dissipation member is exposed from the first surface, and the second heat dissipation member is exposed from the second surface. Supplementary note 2. The semiconductor device described in Supplementary note 1, further comprising: a third heat dissipation member located on the opposite side of the first heat dissipation member with respect to the semiconductor element in the first direction, wherein the sealing resin has a third surface facing an opposite side to the first surface in the first direction, and wherein the third heat dissipation member is exposed from the third surface. Supplementary note 3. The semiconductor device according to Appendix 2, further comprising a fourth heat dissipation member, the fourth heat dissipation member being located on the opposite side to the second heat dissipation member with respect to the semiconductor element in the second direction, the sealing resin having a fourth surface facing the opposite side to the second surface in the second direction, and the fourth heat dissipation member being exposed from the fourth surface. Appendix 4. The semiconductor device according to Appendix 3, wherein the third heat dissipation member is connected to the second heat dissipation member and the fourth heat dissipation member. Appendix 5. The semiconductor device according to Appendix 4, wherein the second heat dissipation member overlaps the semiconductor element as viewed in the second direction. Appendix 6. The semiconductor device according to Appendix 5, wherein the third heat dissipation member overlaps the semiconductor element as viewed in the first direction. Appendix 7. The semiconductor device according to Appendix 4, wherein the semiconductor element has a first electrode facing the first heat dissipation member, and the first electrode is conductively joined to the first heat dissipation member. Appendix 8. The semiconductor device according to Appendix 7, wherein the first heat dissipation member is made of metal. Appendix 9. The semiconductor device according to Appendix 7, wherein the second heat dissipation member and the fourth heat dissipation member are each spaced apart from the first heat dissipation member. Appendix 10. The semiconductor device according to Appendix 9, wherein the second heat dissipation member overlaps the first heat dissipation member when viewed in the first direction.Appendix 11. The semiconductor device according to Appendix 10, wherein the first heat dissipation member has a first end face facing the same side as the second surface in the second direction, and the first end face is exposed from the second surface. Appendix 12. The semiconductor device according to Appendix 11, wherein the second heat dissipation member has a second end face facing the same side as the first surface in the first direction, and the second end face is covered with the sealing resin. Appendix 13. The semiconductor device according to Appendix 12, wherein the first heat dissipation member has a first recess recessed from the first end face, and the second heat dissipation member has a first protrusion protruding from the second end face, and a portion of the first protrusion is accommodated in the first recess. Appendix 14. The semiconductor device according to Appendix 13, wherein the sealing resin has an interposing portion accommodated in the first recess, and the first protrusion is in contact with the interposing portion. Appendix 15. The semiconductor device according to Appendix 14, wherein the first protrusion is exposed from the first surface. Appendix 16. The semiconductor device according to Appendix 9, wherein the second heat dissipation member is spaced apart from the first heat dissipation member when viewed in the first direction. Appendix 17. The semiconductor device according to any one of Appendixes 9 to 16, further comprising: a first terminal located on one side in a third direction orthogonal to each of the first direction and the second direction; the semiconductor element has a second electrode located on the opposite side to the first electrode in the first direction; and the first terminal being electrically connected to the second electrode. Appendix 18. The semiconductor device according to Appendix 17, further comprising a first conductive member electrically connected to the second electrode and the first terminal; and at least a portion of the first conductive member being covered with the sealing resin. Appendix 19. The semiconductor device according to Appendix 18, wherein the third heat dissipation member is electrically connected to the first conductive member. Appendix 20. The semiconductor device according to Appendix 18, wherein the third heat dissipation member is integral with the first conductive member. Appendix 21. The semiconductor device according to claim 6, wherein the fourth heat dissipation member overlaps the semiconductor element when viewed in the second direction. 22. The semiconductor device according to claim 21, wherein an area of ​​a portion of the fourth heat dissipation member exposed from the fourth surface is smaller than an area of ​​a portion of the second heat dissipation member exposed from the second surface.Appendix 23. The semiconductor device according to Appendix 7, wherein the first heat dissipation member includes an insulating layer, and a conductive layer and a heat dissipation layer located on opposite sides of the insulating layer, the first electrode is conductively bonded to the conductive layer, and the heat dissipation layer is exposed from the first surface. Appendix 24. The semiconductor device according to Appendix 23, wherein the first heat dissipation member includes a first support layer located on the same side as the conductive layer with respect to the insulating layer, the first support layer including a metal, and the second heat dissipation member is bonded to the first support layer. Appendix 25. The semiconductor device according to Appendix 18, wherein the semiconductor element has a gate electrode located on the same side as the second electrode in the first direction, and the third heat dissipation member is spaced from the gate electrode as viewed in the first direction. Appendix 26. The semiconductor device according to Appendix 25, further comprising a second terminal located adjacent to the first terminal in the second direction, and the second terminal is electrically connected to the gate electrode. Appendix 27. The semiconductor device according to claim 26, further comprising a second conductive member conductively bonded to the gate electrode and the second terminal, the second conductive member being covered with the sealing resin. 28. The semiconductor device according to claim 19, wherein the first conductive member has a support surface facing the same side as the third surface in the first direction and a protrusion protruding from the support surface, and the third heat dissipation member is conductively bonded to the support surface and in contact with the protrusion.

[0083] A10 to A60: semiconductor device 10: semiconductor element 11, 12: first electrode, second electrode 13: gate electrode 21: first heat dissipation member 21A: insulating layer 21B: conductive layer 21C: heat dissipation layer 21D, 21E: first support layer, second support layer 211: mounting surface 212: first heat dissipation surface 213: first end surface 214: first recess 215: third end surface 216: second recess 22: second heat dissipation member 221: second heat dissipation surface 222: second end surface 223: first convex portion 23: third heat dissipation member 231: third heat dissipation surface 24: fourth heat dissipation member 241: fourth heat dissipation surface 242: fourth end surface 243: second convex portion 29: bonding layer 31 to 33: First to third terminals 41: First conductive member 411: Main portion 411A: Support surface 412, 413: First bonding portion, second bonding portion 414: Protrusion 42: Second conductive member 50: Sealing resin 51 to 56: First to sixth surfaces 57: Interposition portion z, x, y: First to third directions

Claims

1. A semiconductor device comprising a first heat radiating member, a second heat radiating member, a semiconductor element located on one side in a first direction of the first heat radiating member, and a sealing resin covering the semiconductor element, wherein the sealing resin has a first surface facing a side opposite to the side where the semiconductor element is located with respect to the first heat radiating member in the first direction, and a second surface facing one side in a second direction orthogonal to the first direction, the first heat radiating member is exposed from the first surface, and the second heat radiating member is exposed from the second surface.

2. The semiconductor device according to claim 1, further comprising a third heat radiating member, wherein the third heat radiating member is located on a side opposite to the first heat radiating member with respect to the semiconductor element in the first direction, the sealing resin has a third surface facing a side opposite to the first surface in the first direction, and the third heat radiating member is exposed from the third surface.

3. The semiconductor device according to claim 2, further comprising a fourth heat radiating member, wherein the fourth heat radiating member is located on a side opposite to the second heat radiating member with respect to the semiconductor element in the second direction, the sealing resin has a fourth surface facing a side opposite to the second surface in the second direction, and the fourth heat radiating member is exposed from the fourth surface.

4. The semiconductor device according to claim 3, wherein the third heat radiating member is connected to the second heat radiating member and the fourth heat radiating member.

5. The semiconductor device according to claim 4, wherein the second heat radiating member overlaps the semiconductor element when viewed in the second direction.

6. The semiconductor device according to claim 5, wherein the third heat radiating member overlaps the semiconductor element when viewed in the first direction.

7. The semiconductor device according to claim 4, wherein the semiconductor element has a first electrode facing the first heat radiating member, and the first electrode is conductively bonded to the first heat radiating member.

8. The semiconductor device according to claim 7, wherein the first heat radiating member is made of metal.

9. The semiconductor device according to claim 7, wherein each of the second heat radiating member and the fourth heat radiating member is separated from the first heat radiating member.

10. The semiconductor device according to claim 9, wherein the second heat radiating member overlaps the first heat radiating member when viewed in the first direction.

11. The first heat radiating member has a first end face facing the same side as the second face in the second direction, and the first end face is exposed from the second face. The semiconductor device according to claim 10.

12. The second heat radiating member has a second end face facing the same side as the first face in the first direction, and the second end face is covered with the encapsulating resin. The semiconductor device according to claim 11.

13. The first heat radiating member has a first recess recessed from the first end face, the second heat radiating member has a first protrusion protruding from the second end face, and a part of the first protrusion is accommodated in the first recess. The semiconductor device according to claim 12.

14. The encapsulating resin has an intervening portion accommodated in the first recess, and the first protrusion is in contact with the intervening portion. The semiconductor device according to claim 13.

15. The first protrusion is exposed from the first face. The semiconductor device according to claim 14.

16. When viewed in the first direction, the second heat radiating member is separated from the first heat radiating member. The semiconductor device according to claim 9.

17. The semiconductor device further includes a first terminal located on one side of a third direction orthogonal to each of the first direction and the second direction. The semiconductor element has a second electrode located on the side opposite to the first electrode in the first direction, and the first terminal is electrically connected to the second electrode. The semiconductor device according to any one of claims 9 to 16.

18. The semiconductor device further includes a first conductive member electrically joined to the second electrode and the first terminal, and at least a part of the first conductive member is covered with the encapsulating resin. The semiconductor device according to claim 17.

19. The third heat radiating member is electrically joined to the first conductive member. The semiconductor device according to claim 18.

20. The third heat radiating member is integrated with the first conductive member. The semiconductor device according to claim 18.

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