Semiconductor device

Abstract

A semiconductor device according to the present invention includes: a semiconductor element including an element body, a first electrode, and a second electrode; a first lead that is located, with respect to the semiconductor element, on a first side in a second direction crossing a first direction and that has a first terminal surface; a second lead that is located, with respect to the first lead, on a second side in the second direction and that has a second terminal surface; a first conductive member that extends from the semiconductor element to the first side in the second direction and conductively connects the first electrode and the first lead; a second conductive member that extends from the semiconductor element to the first side in the second direction and conductively connects the second electrode and the second lead; and a sealing resin that covers the semiconductor element, the first conductive member, the second conductive member, and a part of each of the first lead and the second lead, and causes the first terminal surface and the second terminal surface to be exposed.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element and a plurality of leads. The leads are located on either side of the semiconductor element. The semiconductor element and the leads are connected by a plurality of bonding wires.

[0003] Japanese Patent Application Laid-Open No. 2023-73509

[0004] [Summary] Current flows through a semiconductor element from one side to the other side of the semiconductor element. If the current path forms a loop, there is a risk of increasing inductance.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-described circumstances, an object of the present disclosure is to provide a semiconductor device capable of reducing inductance.

[0006] A semiconductor device provided by one aspect of the present disclosure comprises a semiconductor element having an element body, a first electrode located on a first side in a first direction with respect to the element body, and a second electrode located on the first side in the first direction with respect to the element body; a first lead located on a first side in a second direction intersecting the first direction with respect to the semiconductor element and having a first terminal surface; a second lead having a second terminal surface located on a second side in the second direction with respect to the first lead; a first conductive member extending from the semiconductor element to the first side in the second direction and conductively connecting the first electrode and the first lead; a second conductive member extending from the semiconductor element to the first side in the second direction and conductively connecting the second electrode and the second lead; and a sealing resin covering the semiconductor element, the first conductive member, the second conductive member, and a portion of each of the first lead and the second lead, and exposing the first terminal surface and the second terminal surface.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 10 is a partial plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 11 is a partial plan view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 11. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 11. FIG. 14 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure. 15 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 16 is a partial plan view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 17 is a bottom view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 16. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 16. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 16. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 16. FIG. 22 is a cross-sectional view showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] First Embodiment: FIGS. 1 to 8 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a semiconductor element 8, a first lead 4, a second lead 5, a first conductive member 1, a second conductive member 2, and a sealing resin 9. The semiconductor device A1 may also include a third lead 6 and a third conductive member 3. The specific functions and uses of the semiconductor device A1 are not limited in any way. The semiconductor device A1 may be used in a power conversion circuit such as a DC-DC converter or an inverter. The package format of the semiconductor device A1 may be QFN (Quad Flat Non-leaded).

[0013] In these figures, for example, an example of the "thickness direction" in the present disclosure is the first direction z. Also, for example, the first side of the first direction z is the z1 side, and the second side opposite the first side in the z direction is the z2 side. Also, for example, a direction perpendicular to the first direction z is the second direction y. Also, for example, the first side of the second direction y is the first side y1, and the second side opposite the first side y1 is the second side y2. Also, for example, the direction perpendicular to the first direction z and the second direction y is the third direction x. Also, for example, the first side of the third direction x is the first side x1, and the second side opposite the first side x1 is the second side x2.

[0014] Semiconductor element 8: The semiconductor element 8 is a component that performs the electrical functions of the semiconductor device A1. The specific configuration of the semiconductor element 8 is not limited. In this embodiment, the semiconductor element 8 is a switching element and a transistor using a nitride semiconductor. More specifically, it may be a GaN-HEMT (High Electron Mobility Transistor) element using gallium nitride (GaN). The semiconductor element 8 is not limited to a nitride semiconductor and may use other semiconductors such as silicon (Si) and silicon carbide (SiC). The semiconductor element 8 is not limited to a HEMT and may be other transistors such as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 8 has an element body 80, one or more first electrodes 81, one or more second electrodes 82, and a third electrode 83. The semiconductor element 8 is mounted on the second main surface 51 of the second lead 5.

[0015] The element body 80 is, for example, a portion in which a substrate layer, a buffer layer, and a nitride layer (all not shown) are stacked. A metal layer may be provided on the second side z2 of the element body 80 in the first direction z. This metal layer and the second main surface 51 may be joined by a bonding material 89. The bonding material 89 may be either conductive or insulating. Examples of the conductive bonding material 89 include solder, Ag paste, Ag sintered material, and Cu sintered material. The semiconductor element 8 may be configured without the above-mentioned metal layer. Alternatively, the metal layer may be configured to have the same potential as, for example, the second electrode 82. In the illustrated example, the semiconductor element 8 overlaps a portion of the second thick portion 53 and a portion of the second thin portion 54 of the second lead 5 when viewed in the z direction.

[0016] The one or more first electrodes 81, the one or more second electrodes 82, and the third electrode 83 are located on a first side z1 in the first direction z of the element body 80. The number of the one or more first electrodes 81 and the one or more second electrodes 82 is not limited in any way. In the illustrated example, as shown in FIG. 3 , three first electrodes 81 and two second electrodes 82 are provided. The number of the first electrodes 81 may be the same as the number of the first branch portions 11, and the number of the second electrodes 82 may be the same as the number of the second branch portions 21. In this example, the first electrode 81 may function as a drain electrode. The second electrode 82 may function as a source electrode. Alternatively, unlike this example, the first electrode 81 may function as a source electrode, and the second electrode 82 may function as a drain electrode. The first electrodes 81 and the second electrodes 82 are arranged alternately in the x direction. The shapes of the first electrode 81 and the second electrode 82 are not limited in any way, and in the illustrated example, they may have a shape with the y direction as the longitudinal direction. The number of third electrodes 83 is not limited in any way. In the illustrated example, the semiconductor element 8 may have two third electrodes 83. The two third electrodes 83 may be spaced apart in the third direction x.

[0017] 1 to 8, the first lead 4 has a first main surface 41 and a first terminal surface 42. The first lead 4 may have a first thick portion 43 and a first thin portion 44.

[0018] The first main surface 41 is a surface facing a first side z1 in the first direction z, and in the illustrated example, may be a smooth surface perpendicular to the first direction z. The first lead 4 may have, for example, a recess or groove recessed from the first main surface 41 as appropriate. The first terminal surface 42 is a surface facing a second side z2 in the first direction z, and faces the opposite side from the first main surface 41. In the illustrated example, the first terminal surface 42 may be a smooth surface perpendicular to the first direction z. A plating layer made of Ni (nickel), Ti (titanium), or the like may be provided on the first terminal surface 42 as appropriate.

[0019] The first thick portion 43 is a portion where the first main surface 41 and the first terminal surface 42 overlap when viewed in the first direction z. In the illustrated example, the first thick portion 43 may be a portion whose longitudinal direction is the third direction x when viewed in the first direction z. The shape of the first thick portion 43 is not limited in any way. The thickness of the first thick portion 43 in the first direction z is the distance between the first main surface 41 and the first terminal surface 42. The first thin portion 44 is a portion that overlaps the first main surface 41 when viewed in the first direction z but does not overlap the first terminal surface 42. In the illustrated example, the first thin portion 44 extends from the first thick portion 43 in a direction intersecting the first direction z when viewed in the first direction z. The thickness of the first thin portion 44 in the first direction z is smaller than the distance between the first main surface 41 and the first terminal surface 42. The thickness of the first thick portion 43 and the thickness of the first thin portion 44 are not limited in any way. For example, the thickness of the first thick portion 43 may be about 0.2 mm to 0.5 mm, and the thickness of the first thin portion 44 may be 0.1 mm to 0.4 mm.

[0020] 1 to 4, the second lead 5 is located on the second side y2 in the second direction y relative to the first lead 4. The center of the second lead 5 in the third direction x may be located at approximately the same position in the third direction x as the center of the first lead 4 in the third direction x.

[0021] As shown in FIGS. 1 to 8 , the second lead 5 has a second main surface 51 and a second terminal surface 52. The second lead 5 may have a second thick portion 53 and a second thin portion 54. The second main surface 51 is a surface facing a first side z1 in the first direction z and, in the illustrated example, may be a smooth surface perpendicular to the first direction z. The second lead 5 may have, for example, a recess or groove recessed from the second main surface 51 as appropriate. The second terminal surface 52 is a surface facing a second side z2 in the first direction z and faces the opposite side from the second main surface 51. In the illustrated example, the second terminal surface 52 may be a smooth surface perpendicular to the first direction z. A plating layer made of Ni (nickel), Ti (titanium), or the like may be provided on the second terminal surface 52 as appropriate. In this embodiment, the second main surface 51 may be located at approximately the same position as the first main surface 41 in the first direction z, and the second terminal surface 52 may be located at approximately the same position as the first terminal surface 42 .

[0022] The semiconductor element 8 is bonded to the second main surface 51 by a bonding material 89. The bonding material 89 may be a conductive bonding material or an insulating bonding material.

[0023] The second thick portion 53 is a portion where the second main surface 51 and the second terminal surface 52 overlap as viewed in the first direction z. In the illustrated example, the second thick portion 53 may be a rectangular portion as viewed in the first direction z. The shape of the second thick portion 53 is not limited in any way. The thickness of the second thick portion 53 in the first direction z is the distance between the second main surface 51 and the second terminal surface 52. The second thin portion 54 is a portion that overlaps the second main surface 51 but does not overlap the second terminal surface 52 as viewed in the first direction z. In the illustrated example, the second thin portion 54 extends from the second thick portion 53 in directions intersecting the first direction z, such as the third direction x and the second direction y, as viewed in the first direction z. The thickness of the second thin portion 54 in the first direction z is smaller than the distance between the second main surface 51 and the second terminal surface 52. The thicknesses of the second thick portion 53 and the second thin portion 54 are not limited in any way. In the present embodiment, the thickness of the second thick portion 53 may be approximately the same as the thickness of the first thick portion 43, and the thickness of the second thin portion 54 may be approximately the same as the thickness of the first thin portion 44. In the illustrated example, the portion of the second thin portion 54 extending from the second thick portion 53 to the second side y2 in the second direction y may be larger than the portion extending to the first side y1.

[0024] Third lead 6: As shown in FIGS. 1 to 4 and 7 , the third lead 6 may be located on the second side y2 in the second direction y with respect to the second lead 5. The center of the third lead 6 in the third direction x may be located on the first side x1 in the third direction x with respect to the center of the second lead 5 in the third direction x. The third lead 6 has a third main surface 61 and a third terminal surface 62. The third lead 6 may have a third thick portion 63 and a third thin portion 64.

[0025] The third main surface 61 is a surface facing the first side z1 in the first direction z and, in the illustrated example, may be a smooth surface perpendicular to the first direction z. The third lead 6 may have, for example, a recess or groove recessed from the third main surface 61 as appropriate. The third terminal surface 62 is a surface facing the second side z2 in the first direction z and faces the opposite side from the third main surface 61. In the illustrated example, the third terminal surface 62 may be a smooth surface perpendicular to the first direction z. A plating layer made of Ni (nickel), Ti (titanium), or the like may be appropriately provided on the third terminal surface 62. In this embodiment, the third main surface 61 may be located at approximately the same position as the first main surface 41 and the second main surface 51 in the first direction z, and the third terminal surface 62 may be located at approximately the same position as the first terminal surface 42 and the second terminal surface 52.

[0026] The third thick portion 63 is a portion where the third main surface 61 and the third terminal surface 62 overlap when viewed in the first direction z. In the illustrated example, the third thick portion 63 may be a rectangular portion when viewed in the first direction z. The shape of the third thick portion 63 is not limited in any way. The thickness of the third thick portion 63 in the first direction z is the distance between the third main surface 61 and the third terminal surface 62. In this embodiment, the thin portion 32 is a portion that overlaps the third main surface 61 when viewed in the first direction z but does not overlap the third terminal surface 62. In the illustrated example, the third thin portion 64 extends from the third thick portion 63 in a direction intersecting the first direction z when viewed in the first direction z. The thickness of the third thin portion 64 in the first direction z is smaller than the distance between the third main surface 61 and the third terminal surface 62. The thicknesses of the third thick portion 63 and the third thin portion 64 are not limited in any way. In this embodiment, the thickness of the third thick portion 63 may be approximately the same as the thickness of the first thick portion 43 and the second thick portion 53, and the thickness of the third thin portion 64 may be approximately the same as the thickness of the first thin portion 44 and the second thin portion 54.

[0027] 1 to 3 and 5 to 8, the first conductive member 1 is located on a first side z1 in the first direction z from the first lead 4, the second lead 5, and the third lead 6. The first conductive member 1 of this embodiment has a first main portion 12, one or more first branch portions 11, and a first connecting portion 13.

[0028] In the illustrated example, the first main portion 12 may have a shape whose longitudinal direction is the third direction x. One or more first branch portions 11 and first connecting portions 13 are connected to the first main portion 12.

[0029] The one or more first branch portions 11 extend along the second direction y and from the first main portion 12 to a second side y2 in the second direction y. The number of the one or more first branch portions 11 is not limited in any way, and in the illustrated example, three first branch portions 11 may be provided. The multiple first branch portions 11 may be arranged side by side in the third direction x. The first branch portion 11 may have a first joint portion 111. The first branch portion 11 may have a first tip portion 112, a first rear end portion 113, and a first root portion 114.

[0030] The first joint 111 is a portion located on the second side y2 in the second direction y with respect to the first main portion 12. The first joint 111 may be located on the second side z2 with respect to the first main portion 12 in the first direction z. The shape of the first joint 111 is not limited in any way, and in the example shown, the first joint 111 may have a shape whose longitudinal direction is the second direction y when viewed in the first direction z. The first joint 111 may be perpendicular to the first direction z.

[0031] The first joint portion 111 is electrically connected to the first electrode 81 via a conductive bonding material 19. The conductive bonding material 19 may be, for example, solder, an Ag paste material, an Ag sintered material, or a Cu sintered material.

[0032] The first root portion 114 is located between the first joint portion 111 and the first main portion 12, and may be connected to the first main portion 12. The shape of the first root portion 114 is not limited in any way, and in the illustrated example, it may be a strip shape along the second direction y.

[0033] The first tip portion 112 is connected to the second side y2 in the second direction y with respect to the second joint portion 211. The first tip portion 112 is spaced apart from the first electrode 81. The first tip portion 112 may be inclined so as to be positioned closer to the first side z1 in the first direction z as it moves toward the second side y2 in the second direction y.

[0034] The first rear end portion 113 is interposed between the second joint portion 211 and the first root portion 114. The first rear end portion 113 is spaced apart from the first electrode 81. The first rear end portion 113 may be inclined so as to be positioned closer to the first side z1 in the first direction z as it moves toward the first side y1 in the second direction y.

[0035] In the illustrated example, the three first branches 11 may include first branches 11 having different lengths in the second direction y. The first branch 11 located in the center in the third direction x may have a longer length in the second direction y than the other first branches 11. The multiple first branches 11 may have the same length.

[0036] The first connecting portion 13 is connected to a first side y1 in the second direction y, which is opposite to the first branch portion 11 with respect to the first main portion 12. The first connecting portion 13 extends from the first main portion 12 to a second side z2 in the first direction z. The shape of the first connecting portion 13 is not limited in any way, and in the example shown, it may have a shape whose longitudinal direction is the third direction x. In the example shown, the center of the first connecting portion 13 in the third direction x may be the same as (or approximately the same as) the center of the first main portion 12 in the third direction x.

[0037] The first connecting portion 13 may include an inclined portion 131 and a joint portion 132. The inclined portion 131 is connected to the first main portion 12. The inclined portion 131 is inclined so that the more it moves toward the first side y1 in the second direction y, the more it is positioned on the second side z2 in the first direction z. The joint portion 132 is connected to the end of the inclined portion 131 on the second side z2 in the first direction z. The joint portion 132 is conductively joined to the first main surface 41 of the first lead 4 by a conductive bonding material 19.

[0038] Second conductive member 2: As shown in FIGS. 1 to 3, 6, and 8, one or more second conductive members 2 are located on a first side z1 in the first direction z from the first lead 4, the second lead 5, and the third lead 6. The number of the one or more second conductive members 2 is not limited in any way. The illustrated semiconductor device A1 may include two second conductive members 2. The two second conductive members 2 are aligned in the third direction x. Each second conductive member 2 is located between two first branch portions 11 adjacent to each other in the third direction x.

[0039] The second conductive member 2 of this embodiment may have a second branch portion 21 and a second connecting portion 23 .

[0040] The second branch portions 21 extend in the second direction y. Each second branch portion 21 may have a second tip portion 212, a second rear end portion 213, and a second root portion 214.

[0041] The second joint 211 may be located on the second side z2 from the first main portion 12 in the first direction z. The shape of the second joint 211 is not limited in any way, and in the illustrated example, it may have a shape whose longitudinal direction is the second direction y when viewed in the first direction z. The second joint 211 may be perpendicular to the first direction z. The second joint 211 may overlap the first joint 111 when viewed in the third direction x. That is, the second branch portion 21 may overlap the first branch portion 11 when viewed in the third direction x. In the illustrated example, the positions of the first joint 111 and the second joint 211 in the first direction z may be the same (or approximately the same).

[0042] The second joint portion 211 is electrically connected to the second electrode 82 via a conductive bonding material 29. The conductive bonding material 29 may be, for example, solder, an Ag paste material, an Ag sintered material, or a Cu sintered material.

[0043] The second root portion 214 is located on a first side y1 in the second direction y with respect to the second joint portion 211. The shape of the second root portion 214 is not limited in any way, and in the illustrated example, it may be a strip shape extending along the second direction y. The second root portion 214 may be located on a first side z1 in the first direction z with respect to the second joint portion 211.

[0044] The second tip portion 212 is connected to the second side y2 in the second direction y with respect to the second joint portion 211. The second tip portion 212 is spaced apart from the first electrode 81. The second tip portion 212 may be inclined so as to be positioned closer to the first side z1 in the first direction z as it moves toward the second side y2 in the second direction y.

[0045] The second rear end portion 213 is interposed between the second joint portion 211 and the second root portion 214. The second rear end portion 213 is spaced apart from the second electrode 82. The second rear end portion 213 may be inclined so as to be positioned closer to the first side z1 in the first direction z as it moves toward the first side y1 in the second direction y.

[0046] In the illustrated example, the two second conductive members 2 may have the same length in the second direction y. The two second conductive members 2 may have different lengths in the second direction y.

[0047] The second connecting portion 23 is connected to the second root portion 214 on a first side y1 in the second direction y. The second connecting portion 23 extends from the second root portion 214 to a second side z2 in the first direction z. The shape of the second connecting portion 23 is not limited in any way, and in the illustrated example, it may have a shape that stands up along the first direction z.

[0048] An end portion of the second connecting portion 23 on the second side z2 in the first direction z is conductively joined to the second main surface 51 of the second lead 5 by a conductive bonding material 29. In the illustrated example, the end portion of the second connecting portion 23 on the second side z2 in the first direction z is conductively joined to a portion of the second main surface 51 that extends from the semiconductor element 8 to the first side y1 in the second direction y.

[0049] Third conductive member 3: The third conductive member 3 electrically connects the third electrode 83 and the third lead 6. One end of the third conductive member 3 is joined to the third electrode 83. The other end of the third conductive member 3 is joined to the third main surface 61. The specific configuration of the third conductive member 3 is not limited in any way. In the illustrated example, the third conductive member 3 may be a wire. The third conductive member 3 may include a metal such as Au (gold), Cu (copper), or an alloy thereof.

[0050] In the semiconductor device A1, the first lead 4 is electrically connected to one or more first electrodes 81 of the semiconductor element 8 via the first conductive member 1. The second lead 5 is electrically connected to one or more second electrodes 82 of the semiconductor element 8 via one or more second conductive members 2. The third lead 6 is electrically connected to the third electrode 83 of the semiconductor element 8 via the third conductive member 3.

[0051] Sealing resin 9: The sealing resin 9 covers the first conductive member 1, the second conductive member 2, and portions of the first lead 4 and the second lead 5. The sealing resin 9 exposes the first terminal surface 42 and the second terminal surface 52. The sealing resin 9 may cover a portion of the third lead 6 and the third conductive member 3. The sealing resin 9 is made of an insulating material such as epoxy resin. As shown in FIGS. 3 to 8 , the sealing resin 9 may have a resin first surface 91, a resin second surface 92, a resin third surface 93, a resin fourth surface 94, a resin fifth surface 95, and a resin sixth surface 96, and may have, for example, a rectangular parallelepiped shape.

[0052] The resin first surface 91 is a surface facing the first side z1 in the first direction z. In the illustrated example, the resin first surface 91 may be a plane perpendicular to the first direction z. The resin second surface 92 is a surface facing the second side z2 in the first direction z. In the illustrated example, the resin second surface 92 may be a plane perpendicular to the first direction z.

[0053] The resin third surface 93 is a surface facing the first side x1 in the third direction x. In the example shown, the resin third surface 93 may be a plane perpendicular to the third direction x. The resin fourth surface 94 is a surface facing the second side x2 in the third direction x. In the example shown, the resin fourth surface 94 may be a plane perpendicular to the third direction x.

[0054] The resin fifth surface 95 is a surface facing the first side y1 in the second direction y. In the example shown, the resin fifth surface 95 may be a plane perpendicular to the second direction y. The resin sixth surface 96 is a surface facing the second side y2 in the second direction y. In the example shown, the resin sixth surface 96 may be a plane perpendicular to the second direction y.

[0055] The first terminal surface 42 and the second terminal surface 52 are exposed from the resin second surface 92. The third terminal surface 62 may be exposed from the resin second surface 92. All or any of the first terminal surface 42, the second terminal surface 52, and the third terminal surface 62 may be flush with the resin second surface 92. All or any of the first terminal surface 42, the second terminal surface 52, and the third terminal surface 62 may protrude slightly from the resin second surface 92.

[0056] The first main portion 12, the first thin portion 44, and the second thin portion 54 may be exposed from the resin third surface 93. The first main portion 12, the first thin portion 44, and the second thin portion 54 may be exposed from the resin fourth surface 94. The first thin portion 44 may be exposed from the resin fifth surface 95. The third thin portion 64 may be exposed from the resin sixth surface 96.

[0057] The semiconductor device A1 may be mounted on a circuit board (not shown) or the like, using the first terminal surface 42, the second terminal surface 52, and the third terminal surface 62 exposed from the second resin surface 92 as mounting terminals. The second side z2 of the semiconductor device A1 in the first direction z may be the mounting surface. The second terminal surface 52 may function as a heat dissipation surface for dissipating heat from the semiconductor element 8.

[0058] Next, the operation of the semiconductor device A1 will be described.

[0059] When the first electrode 81 is a drain electrode and the second electrode 82 is a source electrode, as shown in FIG. 5 , when the semiconductor element 8 is switched ON, current entering from the first terminal surface 42 flows along the first conductive member 1 to the first electrode 81, as indicated by the dashed-dotted arrow in the figure. This current then flows through the element body 80 from the second electrode 82 to the second joint portion 211, as shown in FIG. 6 . The current then flows along the second conductive member 2 to the second lead 5. As can be seen from FIG. 6 , the area of ​​the current loop formed by the first branch portion 11 and the second branch portion 21 is very small when viewed in the third direction x. For example, unlike the present embodiment, in a configuration in which current from the second electrode 82 flows through the second conductive member 2 to the second side y2 in the second direction y relative to the semiconductor element 8 and then flows to the second side z2 in the first direction z, a current loop may be formed that may include the semiconductor element 8, for example, within the third direction x. Compared to the above configuration, the semiconductor device A1 can reduce the area of ​​the current loop, thereby reducing inductance. In particular, when the switching frequency of the semiconductor element 8 is a high frequency of several MHz, the reduction in inductance can improve the operating efficiency.

[0060] Since the first conductive member 1 has a configuration including a plurality of first branch portions 11 and a first main portion 12, the mounting process of the first conductive member 1 can be carried out more easily.

[0061] When the first branch portion 11 and the second branch portion 21 overlap each other as viewed in the third direction x, the area of ​​the current loop can be further reduced.

[0062] The second connecting portion 23 is connected to a portion of the second main surface 51 that is located on the first side y1 in the second direction y from the semiconductor element 8, thereby making it possible to further reduce the area of ​​the current loop.

[0063] By providing the first connecting portion 13 with the inclined portion 131, the area of ​​the current loop can be further reduced.

[0064] 9 to 22 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each of the modified examples and embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0065] 9 shows a first modification of the semiconductor device A1. The semiconductor device A11 of this modification further includes a fourth lead 7.

[0066] The fourth lead 7 is located on the second side y2 in the second direction y with respect to the second lead 5. The fourth lead 7 is spaced apart from the second lead 5. The fourth lead 7 has a fourth main surface 71 and a fourth terminal surface 72. The fourth main surface 71 faces the first side z1 in the first direction z. The semiconductor element 8 is bonded to the fourth main surface 71 via a bonding material 89. The fourth terminal surface 72 faces the second side z2 in the first direction z. The fourth terminal surface 72 is exposed from the resin second surface 92.

[0067] The fourth lead 7 may have a fourth thick portion 73 and a fourth thin portion 74. The fourth thick portion 73 is a portion where the fourth main surface 71 and the fourth terminal surface 72 overlap as viewed in the first direction z. In the illustrated example, the fourth thick portion 73 may be a rectangular portion as viewed in the first direction z. The shape of the fourth thick portion 73 is not limited in any way. The thickness of the fourth thick portion 73 in the first direction z is the distance between the fourth main surface 71 and the fourth terminal surface 72. The fourth thin portion 74 is a portion that overlaps the fourth main surface 71 as viewed in the first direction z but does not overlap the fourth terminal surface 72. In the illustrated example, the fourth thin portion 74 extends from the fourth thick portion 73 in a direction intersecting the first direction z, such as the third direction x and the second direction y, as viewed in the first direction z. The thickness of the fourth thin portion 74 in the first direction z is smaller than the distance between the fourth main surface 71 and the fourth terminal surface 72. There are no limitations on the thickness of the fourth thick portion 73 and the fourth thin portion 74. In the present embodiment, the thickness of the fourth thick portion 73 may be approximately the same as the thickness of the second thick portion 53, and the thickness of the fourth thin portion 74 may be approximately the same as the thickness of the second thin portion 54.

[0068] As can be seen from this modification, the semiconductor element 8 may be mounted on the second lead 5, or on the fourth lead 7 other than the second lead 5.

[0069] 10 shows a second modification of the semiconductor device A1. A semiconductor device A12 of this modification includes a plurality of first conductive members 1.

[0070] The number of the plurality of first conductive members 1 corresponds to the number of the plurality of first electrodes 81, which is three in the illustrated example. Each of the first conductive members 1 may have a first branch portion 11 and a first connecting portion 13.

[0071] As can be seen from this modification, the inductance can be reduced. Either a configuration in which one first conductive member 1 has multiple first branch portions 11 or a configuration in which multiple first conductive members 1 each having one first branch portion 11 are provided may be used.

[0072] 11 to 13 show a third modification of the semiconductor device A1. In the semiconductor device A13 of this modification, the first conductive member 1 is made up of one or more wires, and the second conductive member 2 is made up of one or more wires.

[0073] There is no limitation on the number of wires constituting the first conductive member 1, and the number may be one or more. The wires may contain metals such as Cu (copper), Al (aluminum), Au (gold), etc., or alloys thereof.

[0074] There is no limitation on the number of wires constituting the second conductive member 2, and the number may be one or more. The wires may contain metals such as Cu (copper), Al (aluminum), Au (gold), etc., or alloys thereof.

[0075] This modification can reduce inductance. As can be seen from this modification, the first conductive member 1 and the second conductive member 2 may have various configurations, such as a configuration formed using a metal plate or a configuration using wires.

[0076] 14 to 21 show a semiconductor device according to a second embodiment of the present disclosure. A semiconductor device A2 according to this embodiment differs from the above-described embodiments mainly in the configuration of the second conductive member 2.

[0077] In this embodiment, the second conductive member 2 has a second main portion 22 and a third connecting portion 24 in addition to one or more second branch portions 21 and second connecting portions 23 .

[0078] The number of the one or more second branch portions 21 is not limited in any way, and in the illustrated example, the second conductive member 2 may have two second branch portions 21 .

[0079] The second main portion 22 is located on a second side y2 in the second direction y with respect to the two second branch portions 21. The second main portion 22 may be connected to second tip portions 212 of the two second branch portions 21. The second main portion 22 may be located on a first side z1 in the first direction z with respect to the two second branch portions 21. The second main portion 22 may have a second through hole 222. The second through hole 222 penetrates the second main portion 22 in the first direction z.

[0080] The third connecting portion 24 is connected to the second side y2 in the second direction y of the second main portion 22. The third connecting portion 24 extends from the second main portion 22 to the second side z2 in the first direction z. An end of the third connecting portion 24 on the second side z2 in the first direction z is conductively joined to the second main surface 51 via a conductive bonding material 29.

[0081] The second main portion 22 may have an extending portion 223. The extending portion 223 may include a portion extending from the second main portion 22 to the first side x1 in the third direction x, and a portion extending from the extending portion to the second side y2 in the second direction y.

[0082] The second main portion 22 may have a second recess 221. The second recess 221 is recessed toward the second side y2 in the second direction y. When viewed in the first direction z, the second recess 221 faces the tip of the first branch portion 11 on the second side y2 in the second direction y.

[0083] The first main portion 12 may have one or more first recesses 121. The first recesses 121 are recessed toward a first side y1 in the second direction y. The first recesses 121 face the second root portion 214 when viewed in the first direction z.

[0084] The first main portion 12 may have a first through hole 122. The first through hole 122 penetrates the first main portion 12 in the first direction z.

[0085] The second lead 5 may have a fifth terminal surface 55 and a second thick portion 56. The fifth terminal surface 55 is a surface facing the second side z2 in the first direction z. The fifth terminal surface 55 may be exposed from the second resin surface 92. The fifth terminal surface 55 is located on the second side y2 in the second direction y relative to the second terminal surface 52. The second thick portion 56 is a portion that overlaps with the second main surface 51 and the fifth terminal surface 55 when viewed in the first direction z.

[0086] In the semiconductor device A2, the first electrode 81 may be a drain electrode, and the second electrode 82 may be a source electrode.

[0087] The semiconductor device A2 can reduce inductance. The fifth terminal surface 55 is electrically connected to the second electrode 82 of the semiconductor element 8 via the second branch portion 21, the second main portion 22, and the third connecting portion 24. The fifth terminal surface 55 may be used as a source sense terminal of the semiconductor device A2.

[0088] 22 shows a first modification of the semiconductor device A2. The semiconductor device A21 of this modification includes a fifth lead 5A.

[0089] The fifth lead 5A is located on the second side y2 in the second direction y with respect to the second lead 5. The fifth lead 5A has a fifth main surface 57. The fifth main surface 57 faces the first side z1 in the first direction z. The fifth lead 5A has the above-mentioned fifth terminal surface 55. The second thick portion 56 of the fifth lead 5A is a portion that overlaps with the fifth main surface 57 and the fifth terminal surface 55 when viewed in the first direction z.

[0090] This modification can reduce inductance. As can be seen from this modification, the second terminal surface 52 and the fifth terminal surface 55 may be formed by a part of the same lead, or may be formed by separate leads.

[0091] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways. The present disclosure includes the embodiments described in the following appendices.

[0092] Supplementary Note 1. A semiconductor element (8) having an element body (80), a first electrode (81) located on a first side (z1) in a first direction (z) relative to the element body (80), and a second electrode (82) located on the first side (z1) in the first direction (z) relative to the element body (80); a first lead (4) located on a first side (y1) in a second direction (y) intersecting the first direction (z) relative to the semiconductor element (8) and having a first terminal surface (42); a second lead (5) having a second terminal surface (52) located on a second side (y2) in the second direction (y) relative to the first lead (4); and a first conductive member (1) extending from the semiconductor element (8) to the first side (y1) in the second direction (y) and conductively connecting the first electrode (81) and the first lead (4). A semiconductor device (A1) comprising: a second conductive member (2) extending from the semiconductor element (8) toward the first side (y1) in the second direction (y) and conductively connecting the second electrode (82) and the second lead (5); and a sealing resin (9) covering the semiconductor element (8), the first conductive member (1), the second conductive member (2), and a portion of each of the first lead (4) and the second lead (5), and exposing the first terminal surface (42) and the second terminal surface (52). Supplementary Note 2. The semiconductor device (A1) according to Supplementary Note 1, wherein the semiconductor element (8) has a plurality of the first electrodes (81) and a plurality of the second electrodes (82), and the plurality of first electrodes (81) and the plurality of second electrodes (82) are alternately positioned in a third direction (x) intersecting the first direction (z) and the second direction (y). Supplementary Note 3. The semiconductor device (A1) described in Appendix 2, wherein the first conductive member (1) has a plurality of first branch portions (11) and a first connecting portion (13), each of the plurality of first branch portions (11) having a shape along the second direction (y) and individually conductively connected to the plurality of first electrodes (81), and the first connecting portion (13) is located on the first side (y1) of the plurality of first branch portions (11) in the second direction (y) and is conductively connected to the first lead (4).Supplementary Note 4. The semiconductor device (A1) according to Supplementary Note 3, comprising a plurality of second conductive members (2) corresponding to the plurality of second electrodes (82), each of the plurality of second conductive members (2) having a second branch portion (21) and a second connecting portion (23), the second branch portion (21) having a shape along the second direction (y) and being conductively joined to the second electrode (82), and the second connecting portion (23) being located on the first side (y1) in the second direction (y) with respect to the second branch portion (21), and being conductively joined to the second lead (5). Supplementary Note 5. The semiconductor device (A1) according to Supplementary Note 4, wherein the plurality of first branch portions (11) and the second branch portions (21) of the plurality of second conductive members (2) overlap when viewed in the third direction (x). Supplementary Note 6. The semiconductor device (A1) according to any one of Supplementary Notes 3 to 5, wherein the first connecting portion (13) includes an inclined portion (131) inclined with respect to both the first direction (z) and the second direction (y). Supplementary Note 7. The semiconductor device (A1) according to Supplementary Note 6, wherein the inclined portion (131) has a through hole (1311). Supplementary Note 8. The semiconductor device (A1) according to any one of Supplementary Notes 3 to 7, wherein the first conductive member (1) has a first main portion (12) interposed between the plurality of first branch portions (11) and the first connecting portion (13) and extending in the third direction (x). Supplementary Note 9. The semiconductor device (A1) according to Supplementary Note 8, wherein the first main portion (12) is located on the first side (z1) in the first direction (z) with respect to the plurality of first branch portions (11). Supplementary Note 10. The semiconductor device (A1) according to any one of Supplements 1 to 9, wherein the second conductive member (2) is connected to a portion of the second lead (5) located on the first side (y1) in the second direction (y) with respect to the semiconductor element (8).Supplementary Note 11. The semiconductor device (A1) according to any one of Supplements 1 to 10, wherein the sealing resin (9) has a resin first surface (91) facing the first side (z1) in the first direction (z) and a resin second surface (92) facing a second side (z2) in the first direction (z), and the first terminal surface (42) and the second terminal surface (52) are exposed from the resin second surface (92).Supplementary Note 12. The semiconductor device (A1) according to any one of Supplements 1 to 11, wherein the semiconductor element (8) is mounted on the second lead (5).Appendix 13. The semiconductor device (A11) according to any one of Appendixes 1 to 11, further comprising a fourth lead (7) on which the semiconductor element (8) is mounted. Appendix 14. The semiconductor device (A2) according to any one of Appendixes 1 to 13, further comprising a fifth terminal surface (55) located on the y2 side in the second direction (y) with respect to the second terminal surface (52), and the second conductive member (2) has a portion extending from the second electrode (82) to the second side (y2) in the second direction (y) and is conductive to the fifth terminal surface (55). Appendix 15. The semiconductor device (A2) according to Appendix 14, wherein the second lead (5) includes the fifth terminal surface (55). Appendix 16. The semiconductor device (A1) according to Appendix 1, wherein the first conductive member (1) has a first branch portion (11) and a first connecting portion (13), the first branch portion (11) has a shape along the second direction (y) and is conductively joined to the first electrode (81), and the first connecting portion (13) is located on the first side (y1) in the second direction (y) with respect to the first branch portion (11) and is conductively joined to the first lead (4). Appendix 17. The semiconductor device (A1) according to Supplementary Note 16, wherein the second conductive member (2) has a second branch portion (21) and a second connecting portion (23), the second branch portion (21) is shaped along the second direction (y) and is conductively joined to the second electrode (82), and the second connecting portion (23) is located on the first side (y1) in the second direction (y) with respect to the second branch portion (21) and is conductively joined to the second lead (5). Supplementary Note 18. The semiconductor device (A1) according to any of Supplements 1 to 17, wherein the first electrode (81) is a drain electrode and the second electrode (82) is a source electrode. Supplementary Note 19. The semiconductor device (A1) according to any of Supplements 1 to 17, wherein the first electrode (81) is a source electrode and the second electrode (82) is a drain electrode. Supplementary Note 20. The semiconductor device (A1) according to any of Supplements 1 to 19, wherein the element body (80) includes GaN. Supplementary Note 21. The semiconductor device (A1) according to any one of Supplementary Note 1 to Supplementary Note 20, wherein the semiconductor element (8) has a third electrode (83).Supplementary Note 22. The semiconductor device (A1) according to any one of Supplementary Note 1 to Supplementary Note 21, wherein the first conductive member (1) and the second conductive member (2) are formed of metal plates. Supplementary Note 23. The semiconductor device (A13) according to Supplementary Note 1, wherein the first conductive member (1) and the second conductive member (2) are formed of wires.

[0093] A1, A11, A12, A2, A21: semiconductor device 1: first conductive member 2: second conductive member 3: third conductive member 4: first lead 5: second lead 5A: fifth lead 6: third lead 7: fourth lead 8: semiconductor element 9: sealing resin 11: first branch portion 12: first main portion 13: first connecting portion 19: conductive bonding material 21: second branch portion 22: second main portion 23: second connecting portion 24: third connecting portion 29: conductive bonding material 32: thin portion 41: first main surface 42: first terminal surface 43: first thick portion 44: first thin portion 51: second main surface 52: second terminal surface 53: second thick portion 54: second thin portion 55: fifth terminal surface 56: Second thick portion 57: Fifth main surface 61: Third main surface 62: Third terminal surface 63: Third thick portion 64: Third thin portion 71: Fourth main surface 72: Fourth terminal surface 73: Fourth thick portion 74: Fourth thin portion 80: Element body 81: First electrode 82: Second electrode 83: Third electrode 89: Bonding material 91: First resin surface 92: Second resin surface 93: Third resin surface 94: Fourth resin surface 95: Fifth resin surface 96: Sixth resin surface 111: First bonding portion 112: First tip portion 113: First rear end portion 114: First base portion 121: First recess 122: First through hole 131: Inclined portion 132: Bonding portion 211: Second bonding portion 212: Second tip portion 213: Second rear end portion 214: Second base portion 221: Second recess 222: Second through hole 223: Extension portion x: Third direction y: Second direction z: First direction

Claims

1. A semiconductor device comprising: a semiconductor element having an element body, a first electrode located on a first side in a first direction with respect to the element body, and a second electrode located on the first side in the first direction with respect to the element body; a first lead located on a first side in a second direction intersecting the first direction with respect to the semiconductor element and having a first terminal surface; a second lead located on a second side in the second direction with respect to the first lead and having a second terminal surface; a first conductive member extending from the semiconductor element to the first side in the second direction and conductively connecting the first electrode and the first lead; a second conductive member extending from the semiconductor element to the first side in the second direction and conductively connecting the second electrode and the second lead; and a sealing resin covering the semiconductor element, the first conductive member, and the second conductive member, and a part of each of the first lead and the second lead, and exposing the first terminal surface and the second terminal surface.

2. The semiconductor device according to claim 1, wherein the semiconductor element has a plurality of the first electrodes and a plurality of the second electrodes, and the plurality of the first electrodes and the plurality of the second electrodes are alternately positioned in a third direction intersecting the first direction and the second direction.

3. The semiconductor device according to claim 2, wherein the first conductive member has a plurality of first branch portions and a first connecting portion, each of the plurality of first branch portions has a shape along the second direction and is conductively joined to each of the plurality of first electrodes individually, and the first connecting portion is located on the first side in the second direction with respect to the plurality of first branch portions and is conductively joined to the first lead.

4. The semiconductor device according to claim 3, further comprising a plurality of the second conductive members corresponding to the plurality of the second electrodes, each of the plurality of the second conductive members has a second branch portion and a second connecting portion, the second branch portion has a shape along the second direction and is conductively joined to the second electrode, and the second connecting portion is located on the first side in the second direction with respect to the second branch portion and is conductively joined to the second lead.

5. The semiconductor device according to claim 4, wherein the plurality of the first branch portions and the second branch portions of the plurality of the second conductive members overlap when viewed in the third direction.

6. The semiconductor device according to any one of claims 3 to 5, wherein the first connecting portion includes an inclined portion inclined with respect to both the first direction and the second direction.

7. The semiconductor device according to claim 6, wherein the inclined portion has a through hole.

8. The semiconductor device according to any one of claims 3 to 7, wherein the first conductive member has a first main portion interposed between the plurality of first branch portions and the first connecting portion and extending in the third direction.

9. The semiconductor device according to claim 8, wherein the first main portion is located on the first side in the first direction with respect to the plurality of first branch portions.

10. The semiconductor device according to any one of claims 1 to 9, wherein the second conductive member is connected to a portion of the second lead that is located on the first side in the second direction with respect to the semiconductor element.

11. The semiconductor device according to any one of claims 1 to 10, wherein the encapsulating resin has a first resin surface facing the first side in the first direction and a second resin surface facing the second side in the first direction, and the first terminal surface and the second terminal surface are exposed from the second resin surface.

12. The semiconductor device according to any one of claims 1 to 11, wherein the semiconductor element is mounted on the second lead.

13. The semiconductor device according to any one of claims 1 to 11, further comprising a fourth lead on which the semiconductor element is mounted.

14. The semiconductor device according to any one of claims 1 to 13, comprising a fifth terminal surface located on the y2 side in the second direction with respect to the second terminal surface, wherein the second conductive member has a portion extending from the second electrode to the second side in the second direction and is electrically connected to the fifth terminal surface.

15. The semiconductor device according to claim 14, wherein the second lead includes the fifth terminal surface.

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