Atomic layer deposition device

Abstract

The present invention is advantageous in that an object to be deposited can be heated to an appropriate temperature in a short time and continuously deposited without process delay. Furthermore, the present invention has the advantage of providing an atomic layer deposition device capable of: performing deposition with a desired thickness through a continuous process in one direction; and improving productivity.

Description

Atomic Layer Deposition Device

[0001] The present invention relates to an atomic layer deposition apparatus, and more particularly, to a preheating atomic layer deposition apparatus for obtaining a high-quality deposit while preventing deformation of a deposited material at room temperature and pressure, and a multi-head continuous process atomic layer deposition apparatus for accurately producing a deposit of a desired thickness in a short period of time.

[0002] Atomic layer deposition (ALD) is a method for depositing thin films on substrates or wafers. This method involves separating and supplying reactant materials, then depositing particles formed by chemical reactions between reactant gases onto the substrate or wafer surface to form a thin film. This ALD method offers the advantage of allowing for fine control of film thickness.

[0003] However, the above-mentioned atomic layer deposition method has the disadvantage of taking a long time and reducing productivity because it usually requires creating a vacuum inside the chamber, heating it with a heater, and sequentially injecting purge gas, precursor, and reaction gas.

[0004] To overcome this, a method is being studied in which a curved substrate is transported in a roll-to-roll manner for atomic layer deposition at atmospheric pressure, and precursors and deposition gases are sequentially sprayed by a head to continuously deposit them on the substrate.

[0005] According to prior art patent registration No. 10-2180295, a head for an atomic layer deposition device for depositing an atomic layer on a transported substrate is described, comprising: a top layer portion having a plurality of injection holes for injecting gas and an exhaust hole for exhausting gas; a mid layer portion provided below the top layer portion to disperse gas injected from the top layer portion along the transport direction of the substrate; a top-mid dispersion layer portion provided between the top layer portion and the mid layer portion to change the direction of the gas injected from the top layer portion to disperse it evenly; and a bottom layer portion provided below the mid layer portion to have a plurality of slits formed therein to allow gas to spread in the width direction of the substrate.

[0006] However, since it takes time to heat the substrate, there is a problem of low productivity, and if heating is not done properly, there is a major problem of low deposition quality because the required deposition temperature is not reached.

[0007] In addition, according to the prior art patent registration No. 10-1887193, there is provided a chamber body forming a process space with one side open; a chamber plate installed so as to be horizontally movable and coupled with the chamber body to seal the open side to complete the process space; first and second film winding rollers installed as a pair spaced apart from each other on both sides of the chamber plate, on which a film on which an atomic layer deposition process is to be performed is wound; a gas supply unit installed on the chamber plate and supplying a source gas, a purge gas, and a reaction gas to the process space in the order of the source gas, the purge gas, the reaction gas, and the purge gas; an exhaust unit installed on the opposite side of the chamber plate in the chamber body and discharging the gas supplied by the gas supply unit; a roller rotation unit installed on the outside of the chamber plate and rotating the first and second film winding rollers, respectively, so as to move the first and second film winding rollers from the first film winding roller toward the second film winding roller or from the second film winding roller toward the first film winding roller; The control unit includes a control unit that controls the gas supply unit, the exhaust unit, and the first and second film winding rollers so that one end of the film starts to move in the direction of the second film winding roller from the first film winding roller or in the opposite direction, and a source gas is supplied from the gas supply unit until the first movement is completed, and an excess amount of purge gas is supplied and exhausted inside the process space during the second movement of the film in the opposite direction to the first movement to perform the first purging, and a reaction gas is supplied until the third movement is completed, and an excess amount of purge gas is supplied and exhausted inside the process space during the fourth movement of the film in the opposite direction to the third movement to perform the second purging.

[0008] However, the conventional technology has the problem that the deposition time is long and the deposition efficiency is low because the deposition must be performed repeatedly while changing the rotation direction of the roller in order to deposit the desired thickness.

[0009] The present invention is intended to solve the above-mentioned problems, and specifically, to provide an atomic layer deposition device capable of heating a deposition material to an appropriate temperature in a short period of time and continuously depositing the material without delay in the process.

[0010] In addition, the purpose is to obtain a high-quality deposition product without deformation of the deposition product by appropriately controlling the temperature of the deposition product in each sequential process.

[0011] In addition, the present invention is intended to solve the above-mentioned problem, and specifically, to provide an atomic layer deposition apparatus capable of performing deposition of a desired thickness in a continuous process in one direction and improving productivity.

[0012] An atomic layer deposition apparatus according to one aspect of the present invention includes a chamber section through which a deposition material passes, a roller section provided outside the chamber section and configured to transport the deposition material, a head section provided inside the chamber section and configured to spray an inert gas, a precursor, and a reaction gas onto the deposition material, a preheating section provided in front of the head section based on the direction of transport by the roller section and configured to heat the deposition material before passing through the head section, and a control section configured to control the operation of the roller section and the head section.

[0013] Preferably, a cooling unit configured to cool the deposition material to a temperature below a certain level may be provided behind the head unit based on the direction in which the material is transported by the roller unit.

[0014] Preferably, the preheating unit is provided at the lower portion of the deposition object, and the preheating unit may include a first convection heater configured to heat the deposition object by convection using heat generated by heating a heat source, an infrared heater provided behind the first convection heater based on the direction conveyed by the roller unit and including an infrared bulb configured to heat the deposition object by infrared rays, and a second convection heater provided between the infrared heater and the head unit based on the direction conveyed by the roller unit and configured to heat the deposition object by convection using heat generated by heating a heat source.

[0015] Preferably, the infrared heater may further include a cover portion that surrounds the infrared bulb and has a reflector provided inside to guide light emitted from the infrared bulb toward the deposition material.

[0016] Preferably, the infrared bulbs are provided in multiple numbers, and the control unit can be configured to control the temperature by periodically turning some of the infrared bulbs on and off.

[0017] Preferably, the chamber portion may include an upper chamber and a lower chamber disposed below the upper chamber, and in which the head portion, the preheating portion, and the cooling portion are accommodated therein.

[0018] Preferably, the interior of the chamber portion may include a preheating zone in which the preheating portion is provided, a head zone in which the head portion is provided, and a cooling zone in which the cooling portion is provided.

[0019] Preferably, a first blocking wall having a hole formed therein to enable mutual communication may be provided between the preheating zone and the head zone.

[0020] Preferably, the atomic layer deposition device may further include a height adjustment unit configured to adjust the height of the deposition material transported by the roller unit, and provided on both sides of the chamber unit.

[0021] Preferably, the height adjustment unit may include an idle roller provided inside the height adjustment unit to maintain the tension of the deposition material, support the deposition material horizontally, and be configured to be movable up and down to adjust the height of the deposition material, a motor provided at a lower portion of the height adjustment unit to provide driving force to the idle roller, and a height shaft connected to the rotational axis of the idle roller and configured to rotate according to the rotational drive of the motor to move the rotational axis of the idle roller up and down.

[0022] Preferably, the preheating unit may further include at least one heating roll configured to heat the deposition material, which is provided in front of the first convection heater or between the first convection heater and the infrared heater.

[0023] Preferably, the head portion may be installed in a plurality of rows in a direction perpendicular to the direction in which the deposited material is transported.

[0024] Preferably, the control unit may be configured to set a head unit to be driven among the plurality of head units according to the thickness of the deposition material.

[0025] Preferably, a plurality of head portions can be installed under the deposition material.

[0026] Preferably, the head unit includes a plurality of injection slits configured to inject an inert gas, a precursor, and a reaction gas onto the deposition object, and a plurality of suction slits configured to suck the inert gas, the precursor, and the reaction gas remaining after being injected onto the deposition object from the deposition object, and a partition wall is provided between adjacent injection slits and the suction slits, and the injection slits and the suction slits are alternately formed along a direction conveyed by the roller unit, and the partition wall is provided in plurality, and the partition walls can be configured to have the same width or different widths along a direction conveyed by the roller unit.

[0027] Preferably, the bulkhead may include a first bulkhead and a second bulkhead adjacent to the first bulkhead and having a width of 1.2 to 1.8 times the width of the first bulkhead.

[0028] According to the present invention, there is an advantage in that the deposition material can be heated to an appropriate temperature in a short period of time, thereby enabling continuous deposition without delay in the process.

[0029] In addition, there is an advantage in that a high-quality deposition product without deformation of the deposition product can be obtained by appropriately controlling the temperature of the deposition product in each sequential process.

[0030] In addition, according to the present invention, there is an advantage in that an atomic layer deposition apparatus can be provided that can perform deposition of a desired thickness in a continuous process in one direction and improve productivity.

[0031] Figure 1 is a front view showing the appearance of an atomic layer deposition device according to the present invention.

[0032] Figure 2 is a perspective view of Figure 1

[0033] Figure 3 is a schematic diagram showing the internal structure of the chamber portion in Figure 1.

[0034] Fig. 4 is a configuration diagram showing the configuration of the preheating section in Fig. 1.

[0035] Figure 5 is a structural diagram showing the structure of the infrared heater in Figure 4.

[0036] Figure 6 is a flow chart showing a deposition method using an atomic layer deposition device according to the present invention.

[0037] Fig. 7 is an explanatory diagram for explaining the heating method by the preheating unit in Fig. 6.

[0038] Figure 8 is a schematic diagram showing the internal structure of a chamber according to another embodiment of the present invention.

[0039] Figure 9 is a structural diagram showing the structure of the head portion arranged in the width direction of the deposition material as viewed from above.

[0040] Figure 10 is a schematic diagram showing the detailed structure of the head part equipped in the atomic layer deposition device of Figure 8.

[0041] Figure 11 is a flow chart showing a deposition method using an atomic layer deposition device according to the present invention.

[0042] The configuration and operation of a specific embodiment of the present invention will be described in detail with reference to the drawings.

[0043] Referring to FIGS. 1 to 3, the preheating atomic layer deposition device according to the present invention is configured to include a roller section (30, 40), a chamber section (100), a substrate height adjustment section (20), and a control section (not shown), and a head section (300), a preheating section (400), and a cooling section (500) are provided inside the chamber section (100).

[0044] The above roller section (30, 40) includes a supply roll (30) and a take-up roll (40). A deposition material (50), such as a flexible substrate, film, or separator, is wound around the supply roll (30), and the deposition material is wound again by the take-up roll (40) after passing through the chamber (100). That is, the roller that pulls and transports the deposition material is composed of a pair of rollers, including a supply roll (30) and a take-up roll (40).

[0045] The height of the deposition material supplied by the above supply roll (30) is adjusted by the height adjustment unit (20). The height adjustment unit (20) is installed adjacent to the chamber unit (100), and is preferably provided as a pair on both sides of the chamber unit.

[0046] The above chamber section (100) serves as a housing that creates an atmosphere that allows the deposition material to be deposited quickly without deformation, and may be composed of a lower chamber and an upper chamber.

[0047] That is, the lower chamber may be equipped with equipment such as a head portion (300), a preheating portion (400), a cooling portion (500), and a head support portion (700), and it is preferable that the upper chamber be equipped to be separated from the lower chamber. The upper chamber may be equipped to be completely separated from the lower chamber or to be opened in a rotational manner using a hinge.

[0048] A deposition material supply port (110) and a deposition material discharge port (130) are formed on the side of the chamber section (100) to serve as an inlet and outlet through which the deposition material passes. It is preferable that the deposition material supply port (110) and the deposition material discharge port (130) be formed in the form of a narrow slit to prevent the inflow of external air or impurities.

[0049] The interior of the chamber (100) may be provided with three parts: a preheating zone (120), a head zone (140), and a cooling zone (160).

[0050] The above preheating zone (120) is provided in front of the head zone and serves to allow the deposition material to reach a temperature suitable for the deposition process by the head section (300) in a short period of time.

[0051] Specifically, the preheating zone (120) is equipped with a preheating unit (400), and the preheating unit (400) includes a first convection heater (410), an infrared heater (430), and a second convection heater (450). It is preferable that the preheating unit (400) be equipped below the deposition material.

[0052] The first convection heater (410) heats a heat source and uses the heat generated to heat the deposition material through convection. The heat source may be formed of a liquid such as water or a heating wire, and may be configured in a form surrounded by a heating plate.

[0053] The above infrared heater (430) may include an infrared bulb, and as shown in FIG. 4, a plurality of bulb rows formed in the direction of transport of the deposition material may be arranged in a direction perpendicular to the transport direction.

[0054] Referring to FIG. 5, the infrared heater is provided with a cover part (434) that surrounds an infrared bulb (432), and a reflector is provided inside the cover part (434) so ​​that light emitted from the infrared bulb can be uniformly irradiated toward the deposition material (50).

[0055] That is, by efficiently reflecting and heating the light emitted from the infrared bulb, the distance from the head zone can be shortened, thereby achieving a high-quality deposition effect. The reflector may be formed in a downward convex curved shape.

[0056] The above second convection heater (450) may have the same configuration as the first convection heater (410), and serves to allow the deposition material to reach the process temperature (90°C or higher and 100°C or lower) before entering the head zone.

[0057] Additionally, the preheating unit (400) may further include at least one heating roll (not shown).

[0058] At least one heating roll may be provided in front of the first convection heater (410) or between the first convection heater (410) and the infrared heater (430) to heat the deposition material.

[0059] As an example, the heating roll may be equipped with a heating device inside. In this case, the heating device equipped inside the heating roll may be an electric heater, but is not limited thereto.

[0060] Meanwhile, in the embodiment of the present invention, the arrangement order of the first convection heater (410), the infrared heater (430), the second convection heater (450), and the heating roll can be changed according to the design, and not all of them are necessarily installed, and at least one or more can be selectively provided.

[0061] In the head section (300) provided in the above head zone (140), deposition work is performed on the deposition object by spraying inert gas, precursor, and reaction gas onto the deposition object or discharging them to the outside.

[0062] The head portion (300) may be configured by stacking multiple layers, and the injected gas may be branched and sprayed in each layer. In the layer closest to the deposition object, a sectioned portion is formed along the direction in which the deposition object is transported, and an inert gas, a precursor, a reactive gas, etc. are sequentially sprayed along the sectioned portion. In addition, an exhaust port may be formed between the sections where the inert gas, precursor, and reactive gas are sprayed, through which excess gas is discharged to the outside.

[0063] The deposition material is transported by the rotation of the take-up roll (40), and the substrate is maintained horizontally between a pair of rollers. It is preferable that the distance between the head portion and the deposition material be 400 to 500 μm.

[0064] The deposited material transferred inside the chamber is transferred to the right, and each gas is sprayed to a designated location from the head section.

[0065] Specifically, first, nitrogen (N2) gas, which is an inert gas, is injected, and when the nitrogen gas passes through, the first precursor, TMA gas, is injected. This TMA gas is bonded to the substrate surface. Thereafter, the remaining TMA gas is discharged over the head through the exhaust port through a purge operation. Next, N2 gas, which is an inert gas, is injected again, a purge operation is performed, and thereafter, H2O gas, which is a second precursor or reaction gas, is injected. The H2O gas chemically bonds with the first precursor, TMA, to form an aluminum oxide (Al2O3) film.

[0066] A first blocking wall (125) having a hole formed therein so that the preheating zone (120) and the head zone (140) can be connected to each other can be installed between the above-mentioned preheating zone (120) and the head zone (140).

[0067] After the head zone (140), a cooling zone (160) is provided. A cooling unit (500) may be provided in the cooling zone (160), and the cooling unit can rapidly cool the deposited material to a temperature below a certain level using a fan or a coolant. The cooling unit prevents deformation of the deposited material after deposition, thereby enabling the acquisition of a high-quality deposited material.

[0068] A second blocking wall (145) for heat insulation may be installed between the head zone (140) and the cooling zone (160), or the cooling zone (160) may be provided separately outside the chamber.

[0069] An idle roller (21) is provided inside the height adjustment unit (20) to maintain tension and horizontally support the deposition material. In addition, the idle roller (21) is provided to be able to move up and down so as to adjust the height of the deposition material. This height adjustment unit has the advantage of being able to adjust the height to an appropriate level even when the precursor or reaction gas is replaced with a different type.

[0070] In addition, since the height can be adjusted to an appropriate level when the thickness of the deposited material changes, thin film formation on multiple substrates is possible without replacing the head.

[0071] A motor (22) is provided at the lower portion of the height adjustment unit, and a height shaft (23) having a screw thread is connected to the motor. The height shaft is connected to the rotational axis of the idle roller, and as the height shaft rotates, the rotational axis of the idle roller moves up and down. A control unit (not shown) can precisely adjust the height of the idle roller of the height adjustment unit by controlling the rotation of the motor.

[0072] That is, the motor (22) is provided at the bottom of the height adjustment unit (20) and can provide driving force to the idle roller (21). In addition, the height axis (23) is connected to the rotational axis of the idle roller (21) and can rotate according to the rotational drive of the motor (22) to move the rotational axis of the idle roller (21) up and down.

[0073] Next, an atomic layer deposition method using the preheating atomic layer deposition device will be described with reference to FIG. 6.

[0074] To perform a deposition process using this preheating atomic layer deposition device, a deposition target is installed. The deposition target is preferably made of a flexible material such as a film or separator, and is preferably installed by penetrating the chamber while being wound by a roller.

[0075] Once the installation of the deposition material is complete, the preheating unit and cooling unit are operated.

[0076] At this time, the preheating unit and cooling unit are each equipped with a temperature sensor, and the temperature value is measured in real time and transmitted to the control unit.

[0077] Referring to Fig. 7, in the preheating section, the temperature of the deposition material is quickly raised to a process temperature (e.g., 90°C) suitable for the deposition process. To this end, the preheating section uses an infrared heater to instantaneously heat the deposition material to a temperature (maximum temperature) higher than the process temperature, and then the intensity of the infrared heater is reduced and the deposition material is heated by a convection heater, thereby gradually converging to the process temperature.

[0078] The above maximum temperature is preferably set at a temperature that does not cause deformation depending on the material of the deposition object, and the control unit controls the intensity of the infrared heater to heat the deposition object to the maximum temperature in a short time. That is, the maximum number of infrared bulbs included in the infrared heater is preset according to the maximum temperature, and the control unit lowers the temperature by turning off some of the infrared bulbs when the temperature of the deposition object reaches the maximum temperature.

[0079] Afterwards, duty operation can be performed by turning the infrared bulb on and off depending on the work environment, and after a certain period of time, the work of heating to the highest temperature can be repeated.

[0080] In the above control unit, control is performed by comprehensively using the temperature sensor installed in the preheating unit and the speed sensor provided in the roller unit, and the control of the preheating unit can determine the duty ratio and the number of on / off switches of the infrared bulbs according to the speed sensor value.

[0081] Referring to Fig. 8, the chamber portion (100) may be equipped with a head portion (300) into which various gases required for deposition are sprayed. The head portion (300) is preferably equipped below the deposition object to ensure stable alignment, and in the present embodiment, a plurality of head portions (300) may be equipped along the transport direction of the deposition object. Such a plurality of head portions (300) may be installed below the deposition object.

[0082] The above head part (300) can be supported by a head support part (700) provided at the bottom, and it is preferable that the head support part (700) be precisely height-adjustable.

[0083] The head unit (300) may be equipped with a distance sensor (350), and the distance sensor (350) measures the distance from the floor surface. The control unit uses distance data transmitted from the distance sensor (350) equipped in each head unit (300) to adjust the height of the head support unit (700), thereby maintaining the arrangement of all head units (300) to be uniform.

[0084] In addition, a light emitting element (610) and a light receiving element (630) are provided inside the chamber (100) to match the height of the head (300) so that horizontal alignment can be confirmed.

[0085] The control unit receives the desired deposition thickness and sets the head unit (300) to be driven among the plurality of head units (300). The thickness deposited at one time in each head unit (300) is stored in the storage unit, and the control unit sets the required combination of head units (300) according to the input deposition thickness.

[0086] For example, if the deposition thickness of the equipped head unit (300) is 5 nm and the input deposition thickness is 10 nm, the control unit can select and drive head units 1 and 2 because the combined deposition thickness of head units 1 and 2 is 10 nm. At this time, when the deposition material passes through head unit 1, it is deposited with a thickness of 5 nm, and when it passes through head unit 2, 5 nm is deposited again on top, resulting in a deposition with a thickness of 10 nm.

[0087] The above control unit can change the head unit in situations such as head replacement, or by changing the head unit that is operated periodically. When changing the head unit, the marker unit (800) can be operated to spray a visible marker on the deposition object. For example, after 12 hours from the start of operation of heads 1 and 2, the control unit can operate heads 3 and 4, and after another 12 hours, operate heads 1 and 2.

[0088] Additionally, if the control unit detects an abnormal signal from a head unit in operation, it can stop the operation of that head unit and start the operation of another head unit. For example, if an abnormal signal due to nozzle clogging of head unit 2 is detected while heads 1 and 2 are in operation, the operation of head unit 2 is stopped and the operation of head unit 3 is started. This operation method enables continuous operation of the entire process without interruption even in unexpected situations.

[0089] Referring to Fig. 9, the head parts (300) may be installed in a plurality of rows arranged in a direction perpendicular to the width direction (W) of the deposition material, i.e., the direction (A) in which the deposition material is transported. At this time, the head parts (300) may be arranged in a plurality of rows, and it is preferable that the head parts (300) provided in adjacent rows are formed in an overlapping portion (B) so that there is no non-deposition portion.

[0090] In cases where the width of the deposition material is wide, there is a problem in that the head part (300) must be manufactured separately with a large size, and as the size of the head part (300) increases, there is a disadvantage in that uniform deposition becomes difficult. According to the present embodiment, since deposition is performed using a plurality of head parts (300) on a wide deposition material, a uniform, high-quality deposition material can be obtained.

[0091] Specifically, referring to FIG. 10, the head portion (300) may include a plurality of injection slits (310), a plurality of suction slits (320), and a partition wall (330).

[0092] The above plurality of injection slits (310) can be configured to inject an inert gas, a precursor, and a reaction gas onto the deposition target.

[0093] The above-described plurality of suction slits (320) may be configured to suck in the remaining inert gas, precursor, and reaction gas that have been sprayed onto the deposition object from the deposition object. At this time, the remaining inert gas, precursor, and reaction gas that have been sprayed onto the deposition object and sucked through the suction slits (320) may be introduced into the head unit (300).

[0094] At this time, the injection slit (310) and the suction slit can be formed alternately along the direction of transport by the roller section (30, 40).

[0095] The above-mentioned partition wall (330) may be provided between adjacent injection slits (310) and suction slits (320), and may be provided in multiple numbers.

[0096] In particular, the bulkheads (330) can be configured to have the same width or different widths along the direction in which they are transported by the roller sections (30, 40).

[0097] In one embodiment, the bulkhead (330) may include a first bulkhead (332) and a second bulkhead (334) adjacent to the first bulkhead (332) and having a width of 1.2 to 1.8 times the width of the first bulkhead (332). Preferably, the second bulkhead (334) may have a width of 1.5 times the width of the first bulkhead (332).

[0098] That is, when the partition wall (330) is configured to have different widths along the direction in which it is transported by the roller section (30, 40), the residence time of the precursor on the deposition material in the direction in which it is transported by the roller section (30, 40) can be increased. Accordingly, uniform atomic layer deposition can be achieved on the deposition material, thereby obtaining a high-quality deposition material.

[0099] Next, with reference to FIG. 11, an atomic layer deposition method using a multi-head continuous process atomic layer deposition device according to the present invention will be described.

[0100] To perform a deposition process using this multi-head continuous process atomic layer deposition device, a deposition target is installed. The deposition target is preferably made of a flexible material such as a film or separator, and is preferably installed by penetrating the chamber while being wound by a roller.

[0101] Once the deposition material is installed, the desired deposition thickness is input. Then, the roller unit is driven to begin transporting the deposition material. Simultaneously, all head units within the chamber are driven. At this time, sensing values ​​regarding the head unit's operation are transmitted from various sensors installed in the head unit to the control unit, which then determines whether the head unit is functioning abnormally based on these sensing values.

[0102] The control unit sets the head unit to be driven among multiple head units, excluding the head unit that is judged to have an abnormality. At this time, the deposition thickness of each head unit may vary, and the control unit considers the deposition thickness of each head unit and sets a combination that matches the input deposition thickness and starts driving the selected head unit. When setting the head unit to be driven, the heads to be driven sequentially, starting from the head unit to be driven first, are set and a driving schedule is generated.

[0103] The control unit checks whether a preset change cycle has arrived during the operation of the head unit. If the change cycle has arrived, the control unit refers to the operation schedule and operates the next head unit. In addition, if an abnormal signal is generated from a head unit being operated, the control unit stops the operation of the relevant head unit and operates the next head unit.

[0104] Afterwards, when the control unit transmits a deposition completion signal, it stops the operation of all head units and also stops the operation of the roller unit to end the work.

[0105] Although the present invention has been described above with reference to embodiments thereof, it will be understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the following claims.

Claims

1. Chamber section through which the deposited material passes; A roller section provided on the outside of the chamber section and configured to transport the deposition material; A head section provided inside the chamber section and configured to inject an inert gas, a precursor, and a reaction gas onto the deposition target; A preheating unit provided in front of the head unit based on the direction of transport by the roller unit and configured to heat the deposition material before passing through the head unit; and An atomic layer deposition apparatus characterized by including a control unit configured to control the driving of the roller unit and the head unit.

2. In paragraph 1, An atomic layer deposition apparatus characterized in that a cooling unit is provided behind the head unit to cool the deposition material to a predetermined temperature or lower based on the direction of transport by the roller unit.

3. In paragraph 1, The above preheating part is provided at the lower part of the deposition material, The above preheating part, A first convection heater configured to heat the deposition material by convection using heat generated by heating a heat source; An infrared heater including an infrared bulb configured to heat a deposition material by infrared rays and provided behind the first convection heater based on the direction conveyed by the roller unit; and An atomic layer deposition apparatus characterized by including a second convection heater provided between the infrared heater and the head unit based on the direction conveyed by the roller unit and configured to heat the deposition material by convection using heat generated by heating the heat source.

4. In paragraph 3, The above infrared heater, An atomic layer deposition apparatus characterized in that it further includes a cover part that surrounds the infrared bulb and has a reflector provided inside to guide light emitted from the infrared bulb toward the deposition target.

5. In paragraph 3, The above infrared bulbs are provided in multiple units, An atomic layer deposition device, characterized in that the control unit is configured to control the temperature by periodically turning a part of the infrared bulb on and off.

6. In paragraph 2, The above chamber part, upper chamber; and An atomic layer deposition apparatus characterized by including a lower chamber disposed at the lower portion of the upper chamber and having the head portion, the preheating portion, and the cooling portion accommodated therein.

7. In paragraph 2, The interior of the above chamber is An atomic layer deposition apparatus characterized by including a preheating zone equipped with the preheating unit, a head zone equipped with the head unit, and a cooling zone equipped with the cooling unit.

8. In paragraph 7, An atomic layer deposition apparatus characterized in that a first barrier wall having a hole formed between the preheating zone and the head zone to enable mutual communication is provided.

9. In paragraph 1, An atomic layer deposition apparatus characterized in that it further includes a height adjustment unit provided on both sides of the chamber unit, the height of the deposition material being transported by the roller unit being adjusted.

10. In paragraph 9, The above height adjustment part, An idler roller provided inside the height adjustment section to maintain the tension of the deposition material, support the deposition material horizontally, and is configured to move up and down to adjust the height of the deposition material; A motor provided at the lower portion of the height adjustment unit and configured to provide driving force to the idle roller; and An atomic layer deposition device characterized by including a height axis connected to the rotation axis of the idle roller and configured to move the rotation axis of the idle roller up and down by rotating according to the rotational drive of the motor.

11. In paragraph 3, The above preheating part, An atomic layer deposition apparatus characterized by further comprising at least one heating roll provided in front of the first convection heater or between the first convection heater and the infrared heater and configured to heat the deposition material.

12. In paragraph 1, The above head part, An atomic layer deposition device characterized in that a plurality of the deposition materials are installed side by side in a direction perpendicular to the direction in which the deposition material is transferred.

13. In paragraph 12, The above control unit, An atomic layer deposition apparatus characterized in that it is configured to set a driven head unit among a plurality of head units according to the thickness of the deposition material.

14. In paragraph 12, Multiple head parts, An atomic layer deposition apparatus characterized in that it is installed under the above-mentioned deposition target.

15. In paragraph 1, The above head part, A plurality of injection slits configured to inject an inert gas, a precursor, and a reaction gas onto the above deposition material; and It comprises a plurality of suction slits configured to suck the remaining inert gas, precursor and reaction gas sprayed onto the above deposition object from the above deposition object, A partition is provided between the adjacent injection slit and the suction slit, The above injection slit and the above suction slit are formed alternately along the direction of transport by the roller unit, The above bulkheads are provided in multiple units, An atomic layer deposition apparatus, characterized in that the above-mentioned baffles are configured to have the same width or different widths along the direction in which they are conveyed by the roller unit.

16. In paragraph 15, The above bulkhead, First bulkhead; and An atomic layer deposition apparatus characterized by including a second barrier wall adjacent to the first barrier wall and having a width of 1.2 to 1.8 times the width of the first barrier wall.

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