System and method for setting write speed on the basis of temperature of storage device

Abstract

Disclosed in the present invention are a system and method for setting a write speed on the basis of the temperature of a storage device. The system of the present invention comprises a temperature control circuit and a write speed control circuit. The temperature control circuit senses the temperature of a storage device in real time. The write speed control circuit executes a proportional-integral-derivative algorithm to determine a specified write speed modulation ratio in real time on the basis of a change of the temperature of the storage device over time, so as to send a write speed modulation instruction to the storage device by means of a temperature controller. The write speed of the storage device is modulated in real time on the basis of the specified write speed modulation ratio specified by the write speed modulation instruction.

Description

System and method for setting write speed based on storage device temperature Technical Field

[0001] The present invention relates to a storage device, and in particular to a system and method for setting a write speed based on the temperature of the storage device. Background Art

[0002] No product is perfect, and this applies to storage devices like solid-state drives (SSDs), which can experience slowdowns or lags after prolonged use. Long-term storage device users may have experienced similar issues. For gamers who prioritize their gaming time, improving boot, loading, and smooth gameplay is essential for extended online gaming sessions. Storage device slowdowns often occur during data writing. One of the main causes of sudden slowdowns is a rapid temperature rise, causing a sudden drop in operating frequency. This can cause players to experience lags during use, directly impacting their perception of the device's quality.

[0003] Summary of the Invention

[0004] The present invention addresses the deficiencies of the prior art and provides a system and method for setting a write speed based on the temperature of a storage device.

[0005] The system for setting the write speed based on the temperature of a storage device of the present invention includes a temperature control circuit and a write speed control circuit. The temperature control circuit includes a temperature sensor and a temperature controller. The temperature sensor is connected to the temperature controller. The temperature sensor is configured to sense the temperature of the storage device in real time. The write speed control circuit is connected to the temperature controller. The write speed control circuit is configured to execute a proportional-integral-derivative (PID) algorithm to determine a specified write speed modulation ratio in real time based on the change in the temperature of the storage device sensed by the temperature sensor over time, and to send a write speed modulation instruction to the storage device through the temperature controller, for instructing the write speed of the storage device to be modulated in real time based on the specified write speed modulation ratio specified by the received write speed modulation instruction.

[0006] The method of setting the write speed based on the temperature of a storage device of the present invention includes the following steps: sensing the temperature of the storage device in real time; determining a specified write speed modulation ratio in real time based on the sensed change in the temperature of the storage device over time; sending a write speed modulation instruction to the storage device through the temperature controller in real time based on the specified write speed modulation ratio; and modulating the write speed of the storage device itself in real time based on the received specified write speed modulation ratio by the storage device.

[0007] As described above, the present invention provides a system and method for setting a write speed based on the temperature of a storage device. This system and method can detect changes in the temperature of a storage device over time in real time and, based on the detected temperature changes, modulate the write speed of the storage device in real time over time, thereby preventing damage to the storage device caused by overheating. Furthermore, the modulation process can prevent a sudden drop in the write speed of the storage device.

[0008] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG. 1 is a block diagram of a system for setting a write speed based on a storage device temperature according to an embodiment of the present invention.

[0010] 2 is a schematic diagram illustrating a temperature threshold of a storage device and its corresponding write speed reference value controlled by a system for setting write speed based on storage device temperature according to an embodiment of the present invention.

[0011] 3 is a schematic diagram illustrating a temperature threshold value, a sensed temperature value, and a designated write speed modulation ratio of a storage device controlled by a system for setting write speed based on storage device temperature according to an embodiment of the present invention.

[0012] FIG. 4 is a graph illustrating a system for setting a write speed based on a storage device temperature according to an embodiment of the present invention.

[0013] 5 is a flow chart illustrating the steps of determining a modulation ratio of a write speed according to a change in the temperature of a storage device over time, included in a method for setting a write speed based on the temperature of the storage device according to an embodiment of the present invention.

[0014] 6 is a flow chart illustrating the steps of determining a write speed modulation ratio based on a comparison between the temperature of the storage device and a temperature threshold, included in a method for setting a write speed based on the temperature of the storage device according to an embodiment of the present invention.

[0015] 7 is a flow chart illustrating the steps of establishing a temperature-controlled calculation equation for writing speed in a test mode, included in a method for setting writing speed based on storage device temperature according to an embodiment of the present invention.

[0016] 8 is a flow chart illustrating the steps of using a write speed temperature control equation to calculate a write speed modulation ratio of a storage device in an actual usage mode, included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0017] The following is an explanation of the embodiments of the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following embodiments will further explain the relevant technical content of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.

[0018] Please refer to Figures 1 and 5, wherein Figure 1 is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, and Figure 5 is a flow chart of the steps included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, which determines the modulation ratio of the write speed according to the change of the temperature of the storage device over time.

[0019] The method for setting a write speed based on storage device temperature according to an embodiment of the present invention may be, for example, but not limited to, executed by a system for setting a write speed based on storage device temperature according to an embodiment of the present invention to control modulation of the write speed of one or more storage devices (such as, but not limited to, the storage device SG shown in FIG1 ). Each storage device includes at least one storage component and a control component, wherein the control component is connected to the storage component to control the storage component to perform processing operations such as data writing and erasing.

[0020] As shown in Figure 1, the system for setting the write speed based on the temperature of a storage device according to an embodiment of the present invention comprises at least a temperature controller circuit TMR and a write speed control circuit WCR. The temperature controller circuit TMR comprises a temperature sensor SR and a temperature control circuit CT.

[0021] For example, the write speed control circuit WCR described herein may be a proportional-integral-derivative (PID) controller for executing a proportional-integral-derivative (PID) algorithm, and the controlled storage device SG may be a solid state drive (SSD). This is merely an example, and the present invention is not limited thereto. In practice, the controller may be replaced with another controller having the same function.

[0022] The temperature control circuit CT is connected to the temperature sensor SR, the write speed control circuit WCR, and the control component of the storage device SG. The temperature sensor SR is adjacent to the storage device SG.

[0023] The method for setting the write speed based on the storage device temperature according to an embodiment of the present invention includes steps S101 to S104 as shown in FIG. 5 , so as to modulate the write speed of the storage device SG according to the temperature change of the storage device SG, which is described in detail below.

[0024] In step S101 , the temperature sensor SR of the temperature control circuit CT senses the temperature of the storage device SG in real time.

[0025] In step S102, the write speed control circuit WCR executes a proportional-integral-derivative (PID) algorithm to determine a modulation ratio of the write speed of the storage device SG over time based on the change in the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT over time, as a specified write speed modulation ratio.

[0026] In step S103 , the write speed control circuit WCR sends a write speed modulation command according to the specified write speed modulation ratio, and transmits the command to the control element of the storage device SG via the temperature control circuit CT.

[0027] In step S104 , the control element of the storage device SG modulates the write speed of the storage elements of the storage device SG according to a write speed modulation command received from the write speed control circuit WCR.

[0028] Please refer to Figures 1, 2 and 6, wherein Figure 1 is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, Figure 2 is a schematic diagram of the temperature critical value of a storage device controlled by the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention and its corresponding write speed reference value, and Figure 6 is a flow chart of the steps of determining a write speed modulation ratio based on a comparison between the temperature of the storage device and the temperature critical value included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0029] As shown in FIG1 , the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention includes, in addition to a temperature controller circuit TMR and a write speed control circuit WCR, a comparison circuit TER for executing the method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention. The comparison circuit CMP is connected to the temperature control circuit CT of the temperature controller circuit TMR and the write speed control circuit WCR.

[0030] The method for setting the write speed based on the storage device temperature according to the embodiment of the present invention may further include steps S201 to S203 as shown in FIG6 , to determine the modulation ratio of the write speed of the storage device SG based on the comparison result of the temperature of the storage device SG with a temperature threshold SP, as described in detail below.

[0031] In step S201, a comparison circuit CMP receives a temperature threshold SP of a storage device SG via a temperature control circuit CT of a temperature controller circuit TMR. The temperature threshold SP is equal to or slightly lower than the maximum temperature that the storage device SG can withstand, such as, but not limited to, 70°C as shown in FIG. The temperature threshold SP may be pre-set by a manufacturer's electronics and stored in a storage component or control component of the storage device SG.

[0032] It should be understood that when the method and system for setting write speed based on storage device temperature according to embodiments of the present invention are applied to different storage devices, the temperature threshold obtained or set may be different, depending on the temperature tolerance of each storage device.

[0033] In step S202, the comparison circuit CMP compares the temperature of the storage device SG sensed by the temperature sensor SR in step S101 with a temperature threshold SP to output a comparison signal. Alternatively, the comparison circuit CMP may further calculate a temperature difference between the temperature of the storage device SG sensed by the temperature sensor SR and the temperature threshold SP to output a comparison signal.

[0034] In step S203 , the write speed control circuit WCR determines a designated write speed modulation ratio WR(t) %, ie, the write speed modulation ratio of the storage device SG, according to a comparison signal received from the comparison circuit CMP.

[0035] After executing step S203, the above steps S103 and S104 are executed so that the write speed control circuit WCR instructs the temperature control circuit CT to control the control component of the storage device SG to modulate the write speed of the storage device SG in real time based on a write speed modulation ratio specified by a write speed modulation instruction.

[0036] The write speed control circuit WCR or the manufacturer's electronic device may define the appropriate write speed of the storage device SG when the temperature of the storage device SG reaches a temperature threshold SP, such as 70 degrees as shown in FIG. 2 , as a write speed reference value.

[0037] When it is sensed that the temperature of the storage device SG is about to reach a temperature threshold SP, such as 70°C, the write speed of the storage device SG begins to be gradually reduced over time in advance, so that the write speed of the storage device SG is maintained at no more than a write speed reference value. The problem of a sudden drop in the write speed of the storage device can be avoided during the modulation process.

[0038] Please refer to Figures 1 and 7, where Figure 1 is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, and Figure 7 is a flow chart of the steps of establishing a write speed temperature control calculation equation in a test mode included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0039] The method for setting the write speed based on the storage device temperature according to the embodiment of the present invention may further include steps S301 to S308 as shown in FIG. 7 , to establish a write speed temperature control equation in a test mode, which is described in detail below.

[0040] After executing step S101 to sense the temperature of the storage device SG by the temperature sensor SR of the temperature control circuit CT in a test mode, steps S301 to S303 are executed, and the execution order is not limited to that shown in FIG. 8 .

[0041] In step S301, the comparison circuit CMP obtains the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT at a certain time point (t=s) in a test mode, expressed as T(t)=T(s), where s represents a certain time point, which is a sampling time point in the test mode.

[0042] In step S302, the comparison circuit CMP obtains the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT at a time point (t=s-1) before a certain time point (t=s) in a test mode, expressed as T(t)=T(s-1). The previous time point (t=s-1) is a sampling time point before the certain time point (t=s), for example but not limited to a time point one second before the certain time point (t=s).

[0043] In step S303, the comparison circuit CMP obtains the temperature of the storage device SG sensed by the temperature sensor SR of the temperature control circuit CT at a time point (t=s-2) immediately before a certain time point (t=s) in a test mode, expressed as T(t)=T(s-2). The time point (t=s-1) immediately before the certain time point (t=s) is the sampling time point immediately before the certain time point (t=s), for example but not limited to a time point 2 seconds before the certain time point (t=s).

[0044] After executing steps S201 to S203 to determine a designated write speed modulation ratio WR(t)% of the storage device SG at a certain time point (t=s) by the write speed control circuit WCR, steps S304 to S308 are executed accordingly.

[0045] In step S304 , the write speed control circuit WCR obtains a designated write speed modulation ratio of the storage device SG sensed at a certain time point (t=s) determined by executing steps S201 to S203 in a test mode, expressed as WR(t)%=WR(s)%.

[0046] In step S305, the write speed control circuit WCR obtains a designated write speed modulation ratio of the storage device SG sensed at the previous time point (t=s-1) determined by executing steps S201 to S203 in a test mode, expressed as WR(t)%=WR(s-1)%.

[0047] In step S306, the write speed control circuit WCR substitutes the temperature of the storage device SG sensed at a certain time point (expressed as T(t)=T(s)) obtained in steps S301 to S304, the temperature of the storage device SG sensed at the previous time point (expressed as T(t)=T(s-1)), the temperature of the storage device SG sensed at the previous time point (expressed as T(t)=T(s-2)), a specified write speed modulation ratio of the storage device SG sensed at a certain time point (expressed as WR(t)%=WR(s)%), and a specified write speed modulation ratio of the storage device SG sensed at the previous time point (expressed as WR(t)%=WR(s-1)%) into the following write speed calculation equation in a test mode to calculate a plurality of setting parameters Kp, Ki, and Kd in step S307: WR(t)=WR(t-1)-{Kp×[(T(t)-T(t-1)]+Ki×[T(t)-SP]+Kd×[T(t)-2T(t-1)+T(t-2)]};

[0048] Wherein, WR(t) represents a specified write speed modulation ratio determined for the storage device SG at a certain point in time, WR(t-1) represents a specified write speed modulation ratio determined for the storage device SG at a previous point in time, T(t) represents the temperature of the storage device SG sensed by the temperature sensor SR at a certain point in time, T(t-1) represents the temperature of the storage device SG sensed by the temperature sensor SR at a previous point in time, T(t-2) represents the temperature of the storage device SG sensed at an even previous point in time, SP represents a temperature threshold, and Kp, Ki, and Kd are multiple setting parameters.

[0049] For ease of explanation, as described above, data of the storage device SG is sampled in a test mode. However, in practice, data of other storage devices may be sampled and substituted into a write speed calculation equation to calculate a plurality of setting parameters Kp, Ki, and Kd.

[0050] In step S308 , the write speed control circuit WCR substitutes only the known setting parameters Kp, Ki, and Kd into the above-mentioned write speed calculation equation in a test mode to form / establish a write speed temperature control calculation equation.

[0051] Please refer to Figures 1 and 8, where Figure 1 is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, and Figure 8 is a flow chart of the steps of using a write speed temperature control equation to calculate the write speed modulation ratio of the storage device in an actual usage mode included in a method for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0052] The method for setting the write speed based on the storage device temperature according to an embodiment of the present invention may further include steps S401 to S408 as shown in FIG7 , in which the aforementioned established write speed temperature control equation is used to calculate a specified write speed modulation ratio WR(t)% for the storage device SG (or other storage devices having the same or similar characteristics) during actual use under an actual usage mode. Detailed description is provided below.

[0053] In step S401 , the write speed control circuit WCR obtains a built write speed temperature control equation in an actual use mode.

[0054] In step S402, the temperature sensor SR of the temperature controller circuit TMR senses the temperature of the memory device SG at a current time (t=s+n) in an actual use mode, represented by T(t)=T(s+n). The current time (t=s+n) herein is a time point at which the temperature of the memory device SG is sensed in the actual use mode, and is a time point n seconds after a sampling time point (t=s) in the test mode.

[0055] In step S403, the temperature sensor SR of the temperature controller circuit TMR senses the temperature of the storage device SG at a previous time point (t=s-1, for example, 1 second before time s+n) before a current time point (t=s+n) in an actual use mode, which is expressed as T(t)=T(s+n-1).

[0056] In step S404, the write speed control circuit WCR obtains a designated write speed modulation ratio of the storage device SG sensed at a previous time point (t=s+n-1) determined by executing steps S201 to S203 in an actual usage mode, expressed as WR(t)%=WR(s+n-1)%.

[0057] In step S405, the temperature sensor SR of the temperature controller circuit TMR senses the temperature of the storage device SG at a time point before a current time point (t=s+n) (t=s-2, for example, 2 seconds before time s+n) in an actual use mode, which is expressed as T(t)=T(s+n-2).

[0058] In step S406, the write speed control circuit WCR substitutes the temperature of the storage device SG sensed at a current time point (expressed as T(t)=T(s+n)), the temperature of the storage device SG sensed at a time point immediately before the current time point (expressed as T(t)=T(s+n-1)), a specified write speed modulation ratio of the storage device SG sensed at the immediately previous time point (expressed as WR(t)%=WR(s+n-1)%)), and the temperature at the immediately previous time point (expressed as T(t)=T(s+n-2)) obtained in steps S402 to S405 into a write speed temperature control equation established in step S308 to calculate a specified write speed modulation ratio WR(s+n)% of the storage device sensed at the current time point in step S407.

[0059] In step S408, the write speed control circuit WCR multiplies a designated write speed modulation ratio WR(s+n)% of the storage device SG sensed at a current point in time by a write speed reference value of the storage device SG in an actual usage mode to calculate a designated write speed. The write speed control circuit WCR then issues a write speed modulation command based on the designated write speed.

[0060] Finally, in an actual usage mode, the control component of the storage device SG modulates the write speed at which data is written to the storage components of the storage device SG to a specified write speed indicated by the write speed modulation command received from the write speed control circuit WCR. It should be understood that the method for setting the write speed based on the storage device temperature of the embodiment of the present invention can be repeatedly executed to dynamically and gradually modulate the write speed of the storage device SG in real time as the temperature of the storage device SG changes.

[0061] Please refer to Figures 1, 3 and 4, where Figure 1 is a block diagram of a system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, Figure 3 is a schematic diagram of a temperature critical value, a sensed temperature value and a specified write speed modulation ratio of a storage device controlled by the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention, and Figure 4 is a graph of the system for setting a write speed based on the temperature of a storage device according to an embodiment of the present invention.

[0062] The write speed control circuit WCR can establish a temperature change curve CUTM in a graph as shown in FIG4 based on multiple temperatures of the storage device SG (and other storage devices) sensed by the temperature sensor SR at multiple time points, such as the temperatures T(t), T(t-1), and T(t-2) shown in FIG3 .

[0063] As shown in FIG4 , the vertical axis on one side of the graph lists multiple reference temperature values, and the horizontal axis on one side of the graph, such as the left side, lists multiple times. The write speed control circuit WCR can set multiple write speed reference modulation ratios corresponding to the multiple reference temperature values, and list the multiple write speed reference modulation ratios on the vertical axis on the other side of the graph, such as the right side.

[0064] The write speed control circuit WCR may establish a temperature threshold line CUSP in a curve diagram as shown in FIG4 according to a temperature threshold SP of the storage device SG (and other storage devices), such as 70° C. as shown in FIG3 .

[0065] The write speed control circuit WCR can establish a specified write speed ratio curve CUWR in a graph as shown in FIG4 based on the change of a specified write speed modulation ratio WR(t)% of the storage device SG (and other storage devices) as shown in FIG3 with temperature.

[0066] In summary, the present invention provides a system for setting the write speed based on the temperature of a storage device. This system and method can detect changes in the temperature of a storage device over time in real time. Based on the detected temperature changes, the write speed of the storage device can be modulated in real time over time to prevent damage to the storage device caused by overheating. Furthermore, the modulation process can prevent a sudden drop in the write speed of the storage device.

[0067] The contents disclosed above are only preferred feasible embodiments of the present invention and are not intended to limit the claims of the present invention. Therefore, any equivalent technical changes made using the contents of the present invention's description and drawings are included in the claims of the present invention.

Claims

1. A system for setting a write speed based on the temperature of a storage device, characterized in that, The system for setting the write speed based on the temperature of the storage device includes: A temperature control circuit, including a temperature sensor and a temperature controller, the temperature sensor is connected to the temperature controller, and the temperature sensor is configured to sense the temperature of a storage device in real time; and A write speed control circuit, connected to the temperature controller, configured to execute a proportional-integral-derivative algorithm to determine a specified write speed modulation ratio in real time according to the change of the temperature of the storage device sensed by the temperature sensor over time, and to send a write speed modulation instruction to the storage device through the temperature controller for indicating that the write speed of the storage device is modulated in real time based on the specified write speed modulation ratio specified by the received write speed modulation instruction.

2. The system for setting a write speed based on the temperature of a storage device according to claim 1, wherein The system for setting the write speed based on the temperature of the storage device further includes: A comparison circuit, connected to the temperature controller, configured to compare the temperature of the storage device sensed by the temperature sensor in real time with a temperature threshold to output a comparison signal.

3. The system for setting a write speed based on the temperature of a storage device according to claim 2, wherein The comparison circuit calculates a temperature difference between the temperature of the storage device sensed by the temperature sensor in real time and the temperature threshold to output the comparison signal.

4. The system for setting a write speed based on the temperature of a storage device according to claim 3, wherein The write speed control circuit is connected to the comparison circuit, and the write speed control circuit determines the specified write speed modulation ratio according to the comparison signal to output the write speed modulation instruction.

5. The system for setting a write speed based on the temperature of a storage device according to claim 1, wherein The write speed control circuit establishes a temperature change curve in a graph according to multiple temperature values of the storage device sensed by the temperature sensor at multiple time points. The vertical axis on one side of the graph lists multiple reference temperature values, and the horizontal axis on one side of the graph lists multiple times.

6. The system for setting a write speed based on the temperature of a storage device according to claim 5, wherein The write speed control circuit establishes a temperature threshold line in the graph according to a temperature threshold of the storage device.

7. The system for setting a write speed based on the temperature of a storage device according to claim 6, wherein The write speed control circuit sets multiple write speed reference modulation ratios corresponding to the multiple reference temperature values respectively, lists the multiple write speed reference modulation ratios on the vertical axis on the other side of the graph, and establishes a specified write speed ratio curve in the graph according to the change of the specified write speed modulation ratio with the change of the temperature of the storage device.

8. The system for setting a write speed based on the temperature of a storage device according to claim 1, wherein, The write speed control circuit substitutes the temperatures of the storage device sensed by the temperature sensor at a certain time point, the previous time point, and the time point before that into a write speed operation equation, and substitutes the specified write speed modulation ratios set for the storage device at a certain time point and the previous time point into the write speed operation equation to calculate multiple set parameters; Where the write speed operation equation is: WR(t) = WR(t - 1) - {Kp × [(T(t) - T(t - 1)] + Ki × [T(t) - SP] + Kd × [T(t) - 2T(t - 1) + T(t - 2)]}; Wherein, WR(t) represents a specified write speed modulation ratio set for the storage device at a certain time point, WR(t - 1) represents the specified write speed modulation ratio set for the storage device at the previous time point, T(t) represents the temperature of the storage device sensed by the temperature sensor at a certain time point, T(t - 1) represents the temperature of the storage device sensed by the temperature sensor at the previous time point, T(t - 2) represents the temperature of the storage device sensed at the time point even before that, SP represents a temperature threshold value, and Kp, Ki, and Kd are the multiple set parameters.

9. The system for setting a write speed based on the temperature of a storage device according to claim 8, wherein The write speed control circuit substitutes the calculated multiple set parameters into the write speed operation equation to form a write speed temperature control operation equation, and substitutes the temperature of the storage device sensed by the temperature sensor at any time point into the write speed temperature control operation equation to calculate the specified write speed modulation ratio of the storage device at this time point.

10. The system for setting a write speed based on the temperature of a storage device according to claim 9, wherein The storage device multiplies the specified write speed modulation ratio by a write speed reference value of the storage device to calculate a specified write speed of the storage device.

11. A method for setting a write speed based on the temperature of a storage device, characterized in that, The method for setting the write speed based on the temperature of the storage device includes the following steps: Sense the temperature of a storage device in real time; Determine a specified write speed modulation ratio in real time according to the change of the sensed temperature of the storage device over time; Send a write speed modulation instruction to the storage device in real time according to the specified write speed modulation ratio; And Based on the received specified write speed modulation ratio, the storage device modulates the write speed of itself in real time.

12. The method for setting a write speed based on the temperature of a storage device according to claim 11, wherein The method for setting the write speed based on the temperature of the storage device further includes the following steps: Compare the temperature of the storage device sensed in real time with a temperature threshold value to output a comparison signal.

13. The method for setting a write speed based on the temperature of a storage device according to claim 12, wherein The method for setting the write speed based on the temperature of the storage device further includes the following steps: Calculate a temperature difference between the temperature of the storage device sensed in real time and the temperature threshold value to output the comparison signal.

14. The method for setting a write speed based on the temperature of a storage device according to claim 13, wherein The method for setting the write speed based on the temperature of the storage device further includes the following steps: According to the comparison signal, determine the specified write speed modulation ratio of a write speed reference value corresponding to the temperature threshold value to output the write speed modulation instruction; And Modulate the current write speed of the storage device based on the specified write speed modulation ratio.

15. The method for setting a write speed based on the temperature of a storage device according to claim 11, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: In establishing a curve graph, list multiple reference temperature values on the vertical axis on one side of the curve graph, and list multiple times on the horizontal axis on one side of the curve graph; And According to the multiple temperature values of the storage device sensed at multiple time points, establish a temperature change curve in the curve graph.

16. The method for setting a write speed based on the temperature of a storage device according to claim 15, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Based on a temperature threshold value of the storage device, a temperature threshold line is established in the curve graph.

17. The method for setting a write speed based on the temperature of a storage device according to claim 16, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Set a plurality of write speed reference modulation ratios corresponding to the plurality of reference temperature values respectively; List the plurality of write speed reference modulation ratios on the vertical axis on the other side of the curve graph; And Based on the change of the specified write speed modulation ratio with the temperature change of the storage device, a specified write speed ratio curve is established in the curve graph.

18. The method for setting a write speed based on the temperature of a storage device according to claim 11, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Establish a write speed operation equation: WR(t) = WR(t - 1) - {Kp×[(T(t) - T(t - 1)] + Ki×[T(t) - SP] + Kd×[T(t) - 2T(t - 1) + T(t - 2)]}; Wherein, WR(t) represents the specified write speed modulation ratio set for the storage device at a certain time point, WR(t - 1) represents the specified write speed modulation ratio set for the storage device at the previous time point, T(t) represents the temperature of the storage device sensed at a certain time point, T(t - 1) represents the temperature of the storage device sensed at the previous time point, T(t - 2) represents the temperature of the storage device sensed at the time point before the previous time point, SP represents a temperature threshold value, and Kp, Ki, and Kd are a plurality of set parameters; Substitute the temperatures of the storage device sensed at a certain time point, the previous time point, and the time point before the previous time point into the write speed operation equation; and Substitute the specified write speed modulation ratios set for the storage device at a certain time point and the previous time point into the write speed operation equation to calculate the plurality of set parameters.

19. The method for setting a write speed based on the temperature of a storage device according to claim 18, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Substitute the calculated plurality of set parameters into the write speed operation equation to form a write speed temperature control operation equation; And Substitute the temperature of the storage device sensed at any time point into the write speed temperature control operation equation to calculate the specified write speed modulation ratio of the storage device at this time point.

20. The method for setting a write speed based on the temperature of a storage device according to claim 19, wherein, The method for setting the write speed based on the temperature of the storage device further includes the following steps: Multiply the specified write speed modulation ratio by a write speed reference value of the storage device to calculate a specified write speed of the storage device.

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