Resonator, filter device, and base station

By covering the second dielectric body at the notch of the conductive layer of the dielectric resonator and using a shielding layer, the problems of dielectric resonator loss and power capacity are solved, and a resonator design with high Q value and high power capacity is realized, which improves the performance of filter devices and base stations.

WO2025145864A1PCT designated stage expired Publication Date: 2025-07-10HUAWEI TECH CO LTD
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Patent Information

Application Number
PCT/CN2024/138117
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-01-02
Filing Date
2024-12-10
Publication Date
2025-07-10

AI Technical Summary

Technical Problem

When the existing dielectric resonators adjust the resonant frequency, the formation of gaps in the conductive layer causes an increase in loss, reducing the Q value and power capacity, limiting their wide application.

Method used

Using a combined structure of the first dielectric body and the second dielectric body, the resonance frequency is adjusted by covering the second dielectric body at the gap of the conductive layer, and the shielding layer is used to reduce electromagnetic leakage, thereby increasing the Q value and power capacity.

Benefits of technology

Effectively reduce the surface loss of the dielectric resonator, improve the Q value and power capacity, reduce electromagnetic signal leakage, and improve the performance of filter devices and base stations.

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Abstract

The present application relates to the technical field of communications and provides a resonator, a filter device and a base station to solve the problem of low Q values and power capacities of resonators. The resonator provided by the present application comprises a first dielectric body, a conductive layer and a second dielectric body, the first dielectric body being formed by a first dielectric material, the second dielectric body being formed by a second dielectric material, and the conductive layer covering the outer surface of the first dielectric body. The conductive layer comprises at least one notch, the at least one notch being used for regulating the resonant frequency of the dielectric resonator. The second dielectric body at least covers part of a first notch, the first notch being one of the at least one notch. The relative dielectric constant of the first dielectric material is greater than the relative dielectric constant of the second dielectric material. Providing the second dielectric body covering the notch can regulate the resonant frequency of the resonator and allow the resonator to have a good Q value and power capacity.
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Description

Resonator, filter device and base station

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of the People's Republic of China on January 2, 2024, with application number 202410001378.7 and application name "A resonator, a filtering device and a base station", the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the field of communication technology, and in particular to a resonator, a filter device and a base station. Background Art

[0004] Filters are a crucial component of wireless base station equipment. As wireless base station equipment evolves toward multi-channel and high-integration capabilities, the demand for miniaturized, high-performance, and high-power filters is growing. Dielectric filters, in particular, are attracting increasing attention due to their miniaturization and high performance.

[0005] Dielectric filters are composed of dielectric resonators, which are resonators made of low-loss, high-relative-permittivity materials (such as ceramics). However, the resonant frequency of dielectric resonators is currently adjusted by forming notches in the conductive layer. This increases the loss of the dielectric resonator (lowers the Q value) and reduces its power handling capacity, thus restricting its widespread application. Summary of the Invention

[0006] The present application provides a resonator, a filter device and a base station with low loss and high power capacity.

[0007] In a first aspect, embodiments of the present application provide a resonator comprising a first dielectric body, a conductive layer, and a second dielectric body. The first dielectric body is formed from a first dielectric material, and the second dielectric body is formed from a second dielectric material. The conductive layer covers the outer surface of the first dielectric body. The conductive layer includes at least one notch, which is used to adjust the resonant frequency of the dielectric resonator. Furthermore, in the present application, the second dielectric body at least partially covers the first notch, wherein the first notch is one of the at least one notch. Specifically, when the conductive layer includes one notch, the second dielectric body may partially or completely cover the notch, and the second dielectric body is in contact with the conductive layer. When the conductive layer includes two or more notches, the second dielectric body may partially or completely cover any one notch. Alternatively, some notches may not cover the second dielectric body. The relative dielectric constant of the first dielectric material is greater than that of the second dielectric material. The provision of the second dielectric body can adjust the resonant frequency of the resonator and improve the resonator's Q value and power handling.

[0008] In a specific configuration, the relative dielectric constant of the first dielectric material may be greater than or equal to 8, so as to facilitate miniaturization of the resonator.

[0009] The relative dielectric constant of the second dielectric material may be less than or equal to 4.5, thereby reducing the influence of the second dielectric body on the resonant frequency of the resonant unit.

[0010] In one example, the dielectric strength of the second dielectric material may be greater than or equal to 33 kV / cm to increase the power capacity of the dielectric resonance unit.

[0011] In one example, the resonator may further include a shielding layer that covers at least a portion of the outer surface of the second dielectric body. Specifically, the shielding layer may cover a portion of the outer surface of the second dielectric body, or may completely cover the outer surface of the second dielectric body. The outer surface of the second dielectric body refers to the surface of the second dielectric body that is exposed to the outside in the absence of the shielding layer. Furthermore, the outer surface of the second dielectric body does not include the surface of the second dielectric body that contacts the first dielectric body and the conductive layer. The provision of a shielding layer can effectively prevent or reduce electromagnetic signal leakage from the resonator.

[0012] In terms of physical form, the second medium may be any one of solid, flexible, liquid, gas or powder, or the second medium may be a combination of at least two of solid, flexible, liquid, gas or powder.

[0013] In one example, the resonator may further include a bracket, which is used to fix the connection between the shielding layer and the conductive layer, thereby ensuring the structural stability of the entire resonator. In particular, when the second dielectric body includes a flexible body, liquid, gas or powder, the structural stability of the second dielectric body may be poor and may not provide effective support for the shielding layer. Therefore, by providing a bracket, the connection stability between the shielding layer and the first dielectric body and the conductive layer can be effectively improved, and the flexibility of the second dielectric body in material selection can also be effectively improved. Of course, when the second dielectric body is solid, the resonator may or may not include a bracket.

[0014] In one example, the outer surface of the first dielectric body includes a groove or through-hole, and the notch is located within the groove or through-hole. The second dielectric body covers at least a portion of the groove or through-hole. This means that the first dielectric body can have a variety of structural possibilities, providing good flexibility.

[0015] In one example, the outer surface of the second dielectric body has a groove extending to the notch, that is, the second dielectric body may not completely cover the notch.

[0016] In one example, the second dielectric body also covers at least a portion of the conductive layer, that is, the second dielectric body can cover the area outside the gap in the conductive layer, thereby effectively protecting the conductive layer.

[0017] In a second aspect, the present application further provides a filter device comprising an input port, an output port, and at least one resonator as described above, wherein the at least one resonator is connected to the output port and the output port is signal-connected. A signal can be transmitted from the input port to the filter device, and the signal is processed and then output through the output port.

[0018] In the filter device provided in the present application, by applying the above-mentioned resonator, the loss of the filter device can be effectively reduced, the power capacity can be increased, and the electromagnetic leakage can be reduced, which is beneficial to improving the performance of the filter device.

[0019] In specific applications, the filter device may be a filter, a multiplexer, etc. This application does not limit the specific type of the filter device.

[0020] In a specific configuration, when the filter device includes a plurality of resonators, the filter device may further include a coupling structure, and the plurality of resonators may be coupled via the coupling structure.

[0021] In a third aspect, the present application also provides a base station comprising a radio frequency circuit and the aforementioned filter device, wherein the filter device is communicatively connected to the radio frequency circuit. The filter device can filter and perform other processing on signals in the radio frequency circuit. By applying the aforementioned filter device, the base station can have lower losses, higher power carrying capacity, and improve the operating performance of the base station.

[0022] The base station mentioned in this application refers to a device that communicates directly with user equipment through a wireless channel. A base station may include various forms of macro base stations, micro base stations, relay stations, access points, or remote radio units. In systems using different wireless access technologies, the names of devices with base station functions may vary. In this application, the above-mentioned devices that communicate directly with user equipment through a wireless channel are collectively referred to as base stations.

[0023] Among them, the specific type of the base station and the functions implemented are not specifically limited in this application, and the resonators and filter devices provided in the embodiments of this application can also be used in other devices or scenarios that require the use of resonators and filter devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] FIG1 is a schematic diagram of a three-dimensional structure of a conventional resonator provided in an embodiment of the present application;

[0025] FIG2 is a schematic diagram of the cross-sectional structure taken along line AA in FIG1 ;

[0026] FIG3 is a schematic cross-sectional view of another conventional resonator provided in an embodiment of the present application;

[0027] FIG4 is a schematic diagram of a three-dimensional structure of a resonator provided in an embodiment of the present application;

[0028] FIG5 is a schematic cross-sectional view of the structure along line BB in FIG4 ;

[0029] FIG6 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0030] FIG7 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0031] FIG8 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0032] FIG9 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0033] FIG10 is a schematic diagram of a cross-sectional structure of another resonator provided in an embodiment of the present application;

[0034] FIG11 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0035] FIG12 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0036] FIG13 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0037] FIG14 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0038] FIG15 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0039] FIG16 is a schematic diagram of a three-dimensional structure of a first dielectric body covered with a conductive layer provided in an embodiment of the present application;

[0040] FIG17 is a schematic diagram of the cross-sectional structure taken along the CC direction in FIG16 ;

[0041] FIG18 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0042] FIG19 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0043] FIG20 is a schematic diagram of a cross-sectional structure of another resonator provided in an embodiment of the present application;

[0044] FIG21 is a schematic diagram of a three-dimensional structure of a first dielectric body covered with a conductive layer provided in an embodiment of the present application;

[0045] FIG22 is a schematic cross-sectional view of the structure taken along the DD line in FIG21 ;

[0046] FIG23 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0047] FIG24 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0048] FIG25 is a schematic cross-sectional view of another resonator provided in an embodiment of the present application;

[0049] FIG26 is a schematic structural diagram of a filter device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings.

[0051] To facilitate understanding of the resonator provided in the embodiments of the present application, the following first introduces its application scenarios.

[0052] The resonator provided in the embodiments of the present application is specifically a dielectric resonator. A dielectric resonator refers to an electronic component that generates a resonant frequency, which mainly plays the role of frequency control. A dielectric resonator is a resonator made of a material with low loss and high relative dielectric constant (such as ceramics). It usually has a rectangular or cylindrical structure. The surface of the dielectric resonator is coated with a conductive material. The electromagnetic waves are repeatedly totally reflected inside the medium to form a resonant structure in the medium. Dielectric resonators are widely used in communication fields such as wireless base stations, navigation systems, and satellite communications due to their advantages such as high quality factor, low insertion loss, small size, and light weight.

[0053] As shown in Figures 1 and 2, a commonly used resonator 01 comprises a block-shaped dielectric body 011 and a conductive layer 012 covering the surface of the dielectric body 011. Conductive layer 012 has gaps 013 (i.e., non-conductive regions) extending through the thickness of conductive layer 012. In practical applications, the resonant frequency of resonator 01 can be adjusted by appropriately configuring parameters such as the number, shape, and area of ​​gaps 013.

[0054] For example, as shown in FIG3 , in another embodiment provided herein, the conductive layer 012 has two notches 013, which are disposed on two opposing surfaces of the conductive layer 012. The resonant frequency of the resonator 01 can be adjusted by properly setting parameters such as the shape and area of ​​the two notches 013.

[0055] In actual use, both the conductive region and the non-conductive region (ie, the notch 013 ) of the conductive layer 012 are exposed to the external environment, which results in a lower Q value of the resonator 01 and reduces the power capacity of the resonator 01 .

[0056] To this end, the present application provides a resonator with higher Q value and power handling.

[0057] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0058] As shown in Figures 4 and 5, in one example provided herein, a resonator 10 includes a first dielectric body 11, a conductive layer 12, and a second dielectric body 13. The first dielectric body 11 is formed from a first dielectric material, and the second dielectric body 13 is formed from a second dielectric material. The conductive layer 12 covers the outer surface of the first dielectric body 11, and the second dielectric body 13 covers the notch 121. The second dielectric body 13 is in contact with the conductive layer 12. The relative dielectric constant of the first dielectric material is greater than that of the second dielectric material. The conductive layer 12 includes a notch 121, which is used to adjust the resonant frequency of the dielectric resonator 10.

[0059] The notch 121 can also be considered a non-conductive region in the conductive layer 12. In practical applications, the resonant frequency of the resonator 10 can be adjusted by adjusting parameters such as the shape and area of ​​the notch 121. Furthermore, in the example provided herein, the second dielectric body 13 covers the notch 121, and the relative dielectric constant of the first dielectric material is greater than the relative dielectric constant of the second dielectric material.

[0060] In the example provided in this application, the second dielectric body 13 is provided to effectively reduce the surface loss of the resonator 10 and improve the Q value of the resonator 10 .

[0061] It should be noted that the power capacity of the resonator 10 refers to the maximum power that the resonator 10 can withstand. Generally speaking, the smaller the area of ​​the notch 121 in the conductive layer 12, the greater the power capacity of the resonator 10. However, in actual applications, when the notch 121 is exposed to the external environment, it is not conducive to ensuring the power capacity and operating reliability of the resonator 10. In the example provided in this application, by covering the notch 121 with the second dielectric body 13, the power capacity and reliability of the resonator 10 can be effectively improved. In addition, at the notch 121, a strong reflective interface can be formed between the first dielectric body 11 and the second dielectric body 13. The strong reflective interface can confine the magnetic field and reduce the energy escape from the first dielectric body 11, thereby reducing the surface loss of the resonator 10 and improving the Q value of the resonator 10. The Q value is also called the quality factor. It is a dimensionless unit that measures the performance of the resonator 10. Simply put, the higher the Q value of the resonator 10, the lower the loss of the resonator 10.

[0062] In addition, in the example provided in this application, the resonator 10 further includes a shielding layer 14. The shielding layer 14 covers the outer surface of the second dielectric body 13. By providing the shielding layer 14, the leakage of electromagnetic signals from the resonator 10 can be effectively prevented or reduced, thereby improving the shielding performance of the resonator 10. In a specific configuration, the shielding layer 14 can be made of a material with good conductivity, such as silver, copper, or aluminum. In some examples, the shielding layer 14 can be a metal shell structure with good structural strength. In a specific implementation, the material and structural type of the shielding layer 14 can be reasonably selected according to actual needs, and will not be elaborated here.

[0063] It should be noted that the outer surface of the second dielectric body 13 refers to all exposed outer surfaces of the second dielectric body 13, and does not include the surface of the second dielectric body 13 that contacts the first dielectric body 11 and the conductive layer 12. When the shielding layer 14 is specifically configured, the shielding layer 14 may completely cover the outer surface of the second dielectric body 13, or may cover a portion of the outer surface of the second dielectric body 13. Alternatively, in some examples, the shielding layer 14 may be omitted.

[0064] In addition, in the example provided in the present application, the resonator 10 also includes a bracket 15. The bracket 15 is used to fix the conductive layer 12 and the shielding layer 14. By providing the bracket 15, the connection stability between the conductive layer 12 and the shielding layer 14 is effectively guaranteed, thereby improving the structural stability of the entire resonator 10. In addition, in specific applications, the bracket 15 can be a rectangular block or a ring. Or it can be understood that the dielectric resonator 10 can include one bracket 15 or two or more brackets 15. In summary, in actual applications, the conductive layer 12 and the shielding layer 14 can be fixedly connected by the bracket 15, and the structural shape, setting position and number of the bracket 15 can be reasonably set according to actual needs, which will not be elaborated here.

[0065] In a specific configuration, the conductive layer 12 and the shielding layer 14 may also be connected via the second dielectric body 13 , that is, the bracket 15 may be omitted.

[0066] In practical applications, the specific materials of the first dielectric body 11 , the second dielectric body 13 and the conductive layer 12 can be various.

[0067] For example, the first dielectric body 11 can be made of a first dielectric material having a high relative dielectric constant, such as ceramic. The specific relative dielectric constant of the first dielectric material can be any value greater than or equal to 8. Alternatively, in practical applications, the relative dielectric constant of the first dielectric material can be any value less than 8 and greater than the relative dielectric constant of the second dielectric material.

[0068] The second dielectric body 13 can be made of a second dielectric material having a certain relative dielectric constant, wherein the specific relative dielectric constant of the second dielectric material can be any value less than or equal to 4.5.

[0069] The conductive layer 12 and the shielding layer 14 can be made of materials with good conductivity, such as silver, copper or aluminum.

[0070] It is understandable that in actual applications, the specific materials and relative dielectric constants of the first dielectric material, the second dielectric material, the conductive layer 12 and the shielding layer 14 can be reasonably set according to actual needs.

[0071] In one example provided herein, the second dielectric body 13 can also be made of a material with a relatively high dielectric strength. In specific configurations, the dielectric strength of the second dielectric material can be greater than or equal to any value within the range of 33 kV / cm. In practical applications, the specific material and dielectric strength of the second dielectric material can be appropriately configured based on actual needs, and this is not further detailed here.

[0072] Furthermore, in terms of physical form, the second dielectric body 13 can be any of a solid, a flexible body, a liquid, a gas, or a powder, or a combination of at least two of them. Specifically, the second dielectric body 13 can be any of a pure solid, a flexible body, a liquid, a gas, or a powder. When the second dielectric body 13 is any of a pure solid, a flexible body, a liquid, a gas, or a powder, the second dielectric body 13 can be made of a single second dielectric material or a mixture of two or more different second dielectric materials. Alternatively, the second dielectric body 13 can be a combination of a solid and a flexible body. Alternatively, the second dielectric body 13 can be a combination of a solid, a flexible body, and a liquid. Alternatively, the second dielectric body 13 can be a combination of a solid, a flexible body, a liquid, and a gas. Alternatively, the second dielectric body 13 can be a combination of a solid, a flexible body, a liquid, a gas, and a powder. In summary, in terms of physical form, the second dielectric body 13 can be any of a solid, a flexible body, a liquid, a gas, or a powder, or a combination of at least two of them.

[0073] It should be noted that when the second dielectric body 13 is a flexible body, liquid, gas, or powder, the structural stability of the second dielectric body 13 is relatively poor. Therefore, in some examples, auxiliary structures such as the aforementioned bracket 15 can be used to ensure the structural stability of the entire resonator 10. Of course, when the second dielectric body 13 is made of a material with good structural stability, such as a fixed material, the resonator 10 can also include the aforementioned bracket 15.

[0074] It should be noted that in the examples provided in Figures 4 and 5 , the conductive layer 12 has one notch 121, and the second dielectric body 13 completely covers the notch 121. However, in other examples, the conductive layer 12 may include two or more notches 121. The second dielectric body 13 may cover all or at least one of the notches 121. Alternatively, the second dielectric body 13 may cover at least a portion of a notch 121. Furthermore, the outer surface of the first dielectric body 11 refers to all exposed outer surfaces of the first dielectric body 11.

[0075] For example, as shown in FIG. 6 , in another example provided in the present application, the conductive layer 12 has two notches 121 , and the two notches 121 are respectively located on two opposite surfaces of the conductive layer 12 .

[0076] It is understood that in other examples, the conductive layer 12 may also include three or more notches 121. When the conductive layer 12 includes multiple notches 121, all of the notches 121 may be located in the conductive layer 12 on the same side of the first dielectric body 11, or may be located on different sides of the first dielectric body 11. In other words, the conductive layer 12 on one side of the first dielectric body 11 may have no notches 121, or may have at least one notch 121.

[0077] In addition, in practical application, the shape of the notch 121 can be a polygon such as a circle, an ellipse, a rectangle, or other irregular shapes. In specific settings, the cross-sectional shape of the notch 121 can be reasonably set according to actual needs, and no further details are given here.

[0078] 4 to 6 , the second dielectric body 13 wraps around the outer surface of the conductive layer 12 . That is, both the first dielectric body 11 and the conductive layer 12 are wrapped by the second dielectric body 13 .

[0079] In other examples, the second dielectric body 13 may also cover a portion of the outer surface of the conductive layer 12 .

[0080] 7 , in another example provided herein, the second dielectric body 13 not only completely covers the notch 121, but also covers the conductive layer 12 in the plane where the notch 121 is located. Covering the conductive layer 12 with the second dielectric body 13 can enhance the protection effect on the conductive layer 12.

[0081] In specific configurations, different regions of the second dielectric body 13 can be made of the same material to improve manufacturing convenience. Alternatively, the portion of the second dielectric body 13 covering the notch 121 can be made of a material with a high relative dielectric constant and high dielectric strength, while other regions of the second dielectric body 13 can be made of other materials, thereby reducing the cost of the second dielectric body 13.

[0082] Alternatively, as shown in FIG8 , in another example provided herein, the conductive layer 12 includes two notches 121. The second dielectric body 13 includes two portions. One portion of the second dielectric body 13 completely covers one of the notches 121 and the conductive layer 12 in the plane where the notch 121 is located. The other portion of the second dielectric body 13 covers the other notch 121 and the conductive layer 12 in the plane where the notch 121 is located.

[0083] Alternatively, in an example, when the conductive layer 12 includes a plurality of gaps 121 , the second dielectric body 13 may only cover one gap 121 .

[0084] For example, as shown in FIG. 9 , in another example provided in the present application, the second dielectric body 13 completely covers only one of the gaps 121 and the conductive layer 12 on the plane where the gap 121 is located.

[0085] 7 to 9 , the second dielectric body 13 covers not only the notch 121 but also the conductive layer 12 in the plane where the notch 121 is located. In other examples, the second dielectric body 13 may only cover the notch 121 without covering the conductive layer 12.

[0086] For example, as shown in FIG. 10 , in another example provided in this application, the second dielectric body 13 only covers the gap 121 , and the shielding layer 14 completely covers the second dielectric body 13 .

[0087] Alternatively, as shown in FIG. 11 , in another example provided in the present application, the second dielectric body 13 only covers the gap 121 , and the shielding layer 14 covers a portion of the second dielectric body 13 , and the second dielectric body 13 has an exposed area.

[0088] Alternatively, please refer to FIG. 11 and FIG. 12 in combination. In the example provided in FIG. 12 , the second dielectric body 13 only covers the gap 121 , and the shielding layer 14 can be omitted.

[0089] Alternatively, as shown in FIG13 , in another example provided herein, the conductive layer 12 includes two notches 121. One of the notches 121 (the upper notch 121 in FIG13 ) is covered with the second dielectric body 13, and the outer surface of the second dielectric body 13 is covered with the shielding layer 14. The other notch 121 (the lower notch 121 in FIG13 ) is only covered with the second dielectric body 13, and the outer surface of the second dielectric body 13 is not covered with the shielding layer 14. It should be noted that in the example provided in FIG13 , the shielding layer 14 completely covers the upper second dielectric body 13. In other examples, only a portion of the upper second dielectric body 13 may be covered by the shielding layer 14.

[0090] It should be noted that when the shielding layer 14 does not completely cover the outer surface of the second dielectric body 13, a small amount of magnetic leakage may occur in the area not covered by the shielding layer 14. However, this can still effectively reduce the magnetic leakage of the resonator 10. In other words, compared to the case where the shielding layer 14 is not provided, even if the shielding layer 14 does not completely cover all the outer surfaces of the second dielectric body 13, the magnetic leakage of the resonator 10 can still be effectively reduced.

[0091] 10 to 13 , the second dielectric body 13 completely covers the notch 121 . However, in other examples, the second dielectric body 13 may also cover a portion of the notch 121 .

[0092] For example, as shown in FIG14 , in another example provided herein, the conductive layer 12 includes a notch 121, and the second dielectric body 13 covers a portion of the notch 121. Alternatively, it is understood that the outer surface of the second dielectric body 13 includes a groove 131 extending to the notch 121. In a specific configuration, the cross-section of the groove 131 can be substantially uniform or variable along its depth.

[0093] Alternatively, as shown in FIG15 , in another example provided herein, the conductive layer 12 includes two notches 121. One of the notches 121 (the lower notch 121 in FIG15 ) is exposed. The second dielectric body 13 partially covers the other notch 121 (the upper notch 121 in FIG15 ). Specifically, the outer surface of the second dielectric body 13 includes a groove 131 extending to the notch 121.

[0094] In addition, in the above example, the first dielectric body 11 is a substantially rectangular block structure, and no structures such as grooves or through holes are provided on the surface of the first dielectric body 11 .

[0095] Alternatively, as shown in FIG16 , in another example provided herein, a surface of the first dielectric body 11 includes a through hole 112. In practical applications, the first dielectric body 11 may include one through hole 112, or may include two or more through holes 112. Furthermore, when the first dielectric body 11 includes two or more through holes 112, all of the through holes 112 may be located on the same side surface of the first dielectric body 11, or on different sides of the first dielectric body 11. In other words, one side surface of the first dielectric body 11 may have no through hole 112, or may have at least one through hole 112.

[0096] For example, as shown in FIG. 10 , in an example provided in the present application, the first dielectric body 11 includes a through hole 112 , and the notch 121 is located in the conductive layer 12 within the through hole 112 .

[0097] Specifically, the first dielectric body 11 includes a through hole 112 , and the conductive layer 12 includes two notches 121 . Furthermore, the two notches 121 are both located in the conductive layer 12 within the through hole 112 .

[0098] It should be noted that, when the first dielectric body 11 includes the through hole 112 , the first dielectric body 11 can be directly replaced with the first dielectric body 11 shown in FIG. 4 and FIG. 5 , thereby forming a new resonator 10 .

[0099] 18 , the resonator 10 includes a first dielectric body 11 , a conductive layer 12 , a second dielectric body 13 , and a bracket 15 . Furthermore, the first dielectric body 11 has a through hole 112 .

[0100] Alternatively, based on the first dielectric body 11 having the through hole 112 shown in FIG. 17 , a second dielectric body 13 and a shielding layer 14 and other structures may be provided to form a new resonator 10 .

[0101] For example, as shown in FIG. 19 , in another example provided in the present application, the conductive layer 12 includes two gaps 121 , the second dielectric body 13 may completely cover one of the gaps 121 , and the other gap 121 may not cover the second dielectric body 13 .

[0102] Alternatively, as shown in FIG. 20 , in another example provided in this application, the conductive layer 12 includes a notch 121 , and a portion of the notch 121 may be covered by the second dielectric body 13 , that is, the second dielectric body 13 has a groove 131 extending to the notch 121 .

[0103] Additionally, in other examples, the through hole 112 may also be replaced by a groove structure.

[0104] For example, as shown in FIG. 21 and FIG. 22 , in an example provided in this application, the first dielectric body 11 includes two grooves 111 , and the conductive layer 12 includes two notches 121 . The two notches 121 are respectively located in the conductive layer 12 within the two grooves 111 .

[0105] It should be noted that, when the first dielectric body 11 includes the groove 111 , the first dielectric body 11 can be directly replaced with the first dielectric body 11 shown in FIG. 4 and FIG. 5 , thereby forming a new resonator 10 .

[0106] That is, when the resonator 10 includes the aforementioned bracket 15 , the first dielectric body 11 may still include structures such as the groove 111 or the through hole 112 .

[0107] 23 , the resonator 10 includes a first dielectric body 11 , a conductive layer 12 , a second dielectric body 13 , and a bracket 15 . Furthermore, the first dielectric body 11 has two grooves 111 .

[0108] Alternatively, based on the first dielectric body 11 having the groove 111 shown in FIG. 22 , a second dielectric body 13 and a shielding layer 14 and other structures may be provided to form a new resonator 10 .

[0109] For example, as shown in FIG. 24 , in another example provided in the present application, the conductive layer 12 includes two gaps 121 , the second dielectric body 13 may completely cover one of the gaps 121 , and the other gap 121 may not cover the second dielectric body 13 .

[0110] Alternatively, as shown in FIG. 25 , in another example provided herein, the conductive layer 12 includes two notches 121 , one of which may not cover the second dielectric body 13 , while a portion of the other notch 121 may be covered by the second dielectric body 13 . That is, the second dielectric body 13 has a groove 131 extending to the notch 121 .

[0111] Of course, in other examples, the first dielectric body 11 may also include three or more through holes 112 or grooves 111 , which will not be described in detail here.

[0112] When the groove 111 or the through hole 112 is provided, the structural shapes of the groove 111 or the through hole 112 can be various.

[0113] For example, as shown in Figures 17 and 22, in an example provided in the present application, the cross-section of the groove 111 or the through hole 112 is circular, and the cross-section of the groove 111 or the through hole 112 is basically consistent along the depth direction of the groove 111 or the through hole 112.

[0114] Of course, in other examples, the cross-section of the groove 111 or the through hole 112 may also vary.

[0115] For example, the groove 111 can be a stepped groove. Specifically, along the depth direction of the groove 111, the groove 111 can be divided into two sections with different cross-sections. Alternatively, along the depth direction of the groove 111, the groove 111 can include three or more sections with different cross-sections. Alternatively, within a certain section along the depth direction of the groove 111, the cross-sectional shape of the groove 111 can gradually increase or decrease.

[0116] In addition, when the through hole 112 is set, the through hole 112 can be set similarly with reference to the structure of the above-mentioned groove 111, and will not be described in detail here.

[0117] It is understood that in practical applications, the first dielectric body 11 may also have a cylindrical structure with a circular, elliptical, polygonal, or other irregular cross-section, or may have other shapes. Furthermore, the first dielectric body 11 may not include the grooves 111 or the through-holes 112, or may include only the grooves 111, or only the through-holes 112. Alternatively, the first dielectric body 11 may include both the grooves 111 and the through-holes 112. The shape and structure of the first dielectric body 11 can be appropriately adjusted based on actual circumstances, and will not be elaborated upon here.

[0118] It should be noted that, in actual applications, when the first dielectric body 11 includes a groove 111, the notch 121 in the conductive layer 12 may be located in the conductive layer 12 within the groove 111, or may be located in the conductive layer 12 outside the groove 111. Alternatively, when the conductive layer 12 includes multiple notches 121, all of the notches 121 may be located in the conductive layer 12 within the groove 111, or at least one notch 121 may be located in the conductive layer 12 within the groove 111.

[0119] When the first dielectric body 11 includes a through hole 112, the notch 121 in the conductive layer 12 may be located in the conductive layer 12 within the through hole 112, or may be located in the conductive layer 12 outside the through hole 112. Alternatively, when the conductive layer 12 includes multiple notches 121, all of the notches 121 may be located in the conductive layer 12 within the through hole 112, or at least one notch 121 may be located in the conductive layer 12 within the through hole 112.

[0120] 23 , the second dielectric body 13 completely fills the groove 111. However, in other examples, the second dielectric body 13 may only cover the gap 121, and the remaining area in the groove 111 may not be filled with any material, or may be filled with other materials.

[0121] 18 , the second dielectric body 13 completely fills the through hole 112. However, in other examples, the second dielectric body 13 may only cover the gap 121, and the remaining area in the through hole 112 may not be filled with any material, or may be filled with other materials.

[0122] In actual application, the structural shape of the first dielectric body 11, the number of the notches 121, and the setting position have high flexibility. Therefore, in actual application, the coverage of the notches 121 by the second dielectric body 13 can be flexibly set. In addition, the coverage of the second dielectric body 13 by the shielding layer 14 can also be flexibly set.

[0123] It should be noted that in practical applications, the first dielectric body 11 , the conductive layer 12 , the second dielectric body 13 and the shielding layer 14 of different structural types can be arbitrarily combined according to actual needs to form various types of resonators 10 .

[0124] In addition, in actual application, the dielectric resonator 10 can be used alone in a communication device, or the dielectric resonator 10 can also be used in a filtering device.

[0125] For example, as shown in Figure 26, the embodiment of the present application further provides a filter device 20. The filter device 20 is specifically a dielectric filter.

[0126] Specifically, the dielectric filter includes an input port 21, an output port 22, and the aforementioned resonators. Signals can be transmitted from the input port 21 into the dielectric filter, where they are filtered and then output through the output port 22. The dielectric filter includes six resonators, namely resonators 10a, 10b, 10c, 10d, 10e, and 10f. At least one of the resonators is a resonator provided by the present invention. The dielectric filter also includes a coupling structure that enables coupling between different resonators.

[0127] For example, as shown in Figure 26, in one example provided herein, a dielectric filter includes six coupling structures. The three ends of T-shaped hole 23 form coupling structures 200a, 200b, and 200c, respectively. The three ends of T-shaped hole 24 form coupling structures 200d, 200e, and 200f, respectively. Furthermore, the dielectric filter also includes two concave-hole-shaped coupling structures 200g and 200h. Among them, the coupling structure 200a can be used to achieve coupling between the resonator 10a and the resonator 10f, the coupling structure 200b (200f) can be used to achieve coupling between the resonator 10a and the resonator 10b, the coupling structure 200d can be used to achieve coupling between the resonator 10b and the resonator 10c, the coupling structure 200e can be used to achieve coupling between the resonator 10c and the resonator 10d, the coupling structure 200h can be used to achieve coupling between the resonator 10d and the resonator 10e, and the coupling structure 200c can be used to achieve coupling between the resonator 10e and the resonator 10f.

[0128] It should be understood that the example provided in FIG. 26 is merely a specific example of a dielectric filter. In actual applications, the specific structural type of the dielectric filter, as well as the structure and number of resonators contained in the dielectric filter, can vary. Furthermore, the type of coupling structure within the dielectric filter can also vary. When configuring the dielectric filter, conventional methods can be employed for reasonable configuration. This will not be elaborated upon here.

[0129] In addition, when specifically configured, the resonator 10 can also be used in multiplexers such as duplexers and triplexers. Alternatively, the resonator 10 can also be used in other types of electronic devices. This application does not limit the specific application scenarios of the resonator 10.

[0130] In addition, an embodiment of the present application further provides a base station, which includes devices such as the filter device and radio frequency circuit described in the above embodiment. The radio frequency circuit is communicatively connected to the filter device, so that the filter device can filter and perform other processing on the signal generated by the radio frequency circuit. Of course, in other examples, the base station may also include devices such as antennas. In actual applications, the type and quantity of electronic devices included in the base station can be reasonably set according to actual needs. The base station mentioned in this application refers to a device that communicates directly with user equipment through a wireless channel. The base station may include various forms of macro base stations, micro base stations, relay stations, access points or radio frequency remote units, etc. In systems using different wireless access technologies, the names of devices with base station functions may be different. In this application, the above-mentioned devices that communicate directly with user equipment through wireless channels are collectively referred to as base stations.

[0131] Among them, the specific type of the base station and the functions implemented are not specifically limited in this application, and the resonator 10 and filter device provided in the embodiment of this application can also be used in other devices or scenarios that require the use of the resonator 10 and filter device.

[0132] In the various embodiments of the present application, unless otherwise specified or there is a logical conflict, the terms and / or descriptions between different embodiments are consistent and can be referenced by each other. The technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationships.

[0133] In this application, "plurality" refers to two or more. "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can mean: A exists alone, A and B exist simultaneously, and B exists alone. A and B can be singular or plural.

[0134] It is understood that the various numbers used in the embodiments of this application are merely for ease of description and are not intended to limit the scope of the embodiments of this application. The order of the sequence numbers of the above-mentioned processes does not necessarily imply a specific order of execution; the order of execution of the processes should be determined by their functions and inherent logic.

Claims

1. A resonator, characterized in that, Comprising: A first dielectric body formed of a first dielectric material, an outer surface of the first dielectric body being covered with a conductive layer, the conductive layer including at least one notch for adjusting a resonance frequency of the resonator; A second dielectric body formed of a second dielectric material, the second dielectric body covering at least a part of the first notch and the second dielectric body being in contact with the conductive layer, the first notch being one of the at least one notch; Wherein, a relative dielectric constant of the first dielectric material is greater than a relative dielectric constant of the second dielectric material.

2. The resonator according to claim 1, characterized in that, A dielectric strength of the second dielectric material is greater than or equal to 33 kV / cm.

3. The resonator according to claim 1 or 2, characterized in that, The relative dielectric constant of the first dielectric material is greater than or equal to 8.

4. The resonator according to any one of claims 1 to 3, characterized in that, The resonator further includes a shielding layer covering at least a part of an outer surface of the second dielectric body.

5. The resonator according to claim 4, wherein The resonator further includes a bracket for fixedly connecting the shielding layer and the conductive layer.

6. The resonator according to any one of claims 1 to 5, characterized in that A groove or a through hole is included on an outer surface of the first dielectric body, the notch being located in the groove or the through hole; The second dielectric body covers at least a part of the groove or the through hole.

7. The resonator according to any one of claims 1 to 6, characterized in that, An outer surface of the second dielectric body has a groove extending to the notch.

8. The resonator according to any one of claims 1 to 7, characterized in that, The second dielectric body is at least one of a solid, a flexible body, a liquid, a gas, or a powder.

9. A filtering device, characterized in that, Including an input port, an output port, and at least one resonator according to any one of claims 1 to 8, the at least one resonator being signal-connected to the output port and the output port.

10. The filtering device according to claim 9, characterized in that, The filtering device includes a coupling structure and a plurality of the resonators, the plurality of resonators being coupled through the coupling structure.

11. A base station, characterized in that, Including a radio frequency circuit and a filtering device according to claim 9 or 10, the filtering device being communicatively connected to the radio frequency circuit.

Citation Information

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