Radio frequency power output circuit and semiconductor process device

Abstract

The present application relates to the technical field of semiconductors, and discloses a radio frequency power output circuit and a semiconductor process device, which can alleviate the problem of low chamber matching degree caused by differences of radio frequency systems to improve the thin film performance. The radio frequency power output circuit comprises: a radio frequency power supply module, comprising a first radio frequency power supply and a second radio frequency power supply; and a power distribution module, comprising a first input end, a second input end, and a plurality of output ends which are in one-to-one correspondence with a plurality of process chambers, wherein the first input end is electrically connected to the first radio frequency power supply, the second input end is electrically connected to the second radio frequency power supply, the output ends are used for being electrically connected to the corresponding process chambers, and the power distribution module is used for averagely distributing, to the process chambers, the energy of a first radio frequency signal received by the first input end and / or the energy of a second radio frequency signal received by the second input end.

Description

RF power output circuit and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a radio frequency power output circuit and semiconductor process equipment. Background Art

[0002] As the critical dimension (CD) of components continues to decrease, PEALD (Plasma Enhanced Atomic Layer Deposition) technology, as a process for depositing semiconductor films with good uniformity, is very important in processes below 28nm. Compared with physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), films deposited by PEALD have good conformality, precise thickness control, and excellent filling capabilities for high aspect ratio pattern structures. In addition, PEALD's lower process temperature also facilitates process integration. However, various ALD (atomic layer deposition) methods, such as thermal ALD (thermal atomic layer deposition) and PEALD, have low production capacity due to slow reaction speeds, which limits their application in mass production in the integrated circuit industry.

[0003] To increase production capacity, batch-type, twin-chamber, and quadruple-chamber PEALD multi-wafer chambers are widely used in the deposition of oxides (such as SiO2). During the deposition process, multiple wafers can be placed in the chamber simultaneously, and the deposition process is completed in one go. Compared to single-wafer processes, this reduces wafer transfer time and significantly improves production capacity.

[0004] With the continuous advancement of semiconductor technology, multi-wafer processing systems, while meeting production capacity requirements, are increasingly demanding thin film performance requirements (such as thickness uniformity, density, and stress). Due to process limitations, differences in the RF systems of different chambers affect the matching of the deposited films in each chamber, and thus the performance of the films deposited in each chamber. Summary of the Invention

[0005] Embodiments of the present application provide a radio frequency power output circuit and semiconductor process equipment, which can improve the problem of low chamber matching caused by differences in radio frequency systems, thereby improving thin film performance.

[0006] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0007] In one aspect, an embodiment of the present application provides a radio frequency power output circuit for use in semiconductor process equipment, wherein the semiconductor process equipment includes: a plurality of independent process chambers;

[0008] The radio frequency power output circuit includes:

[0009] A radio frequency power supply module, comprising a first radio frequency power supply and a second radio frequency power supply, wherein the first radio frequency power supply is configured to output a first radio frequency signal, and the second radio frequency power supply is configured to output a second radio frequency signal, wherein a frequency value of the first radio frequency signal is greater than a frequency value of the second radio frequency signal;

[0010] A power distribution module includes a first input end, a second input end, and a plurality of output ends corresponding one to one with the plurality of process chambers; the first input end is electrically connected to the first RF power supply, and is used to receive the first RF signal output by the first RF power supply; the second input end is electrically connected to the second RF power supply, and is used to receive the second RF signal output by the second RF power supply; each of the output ends is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first RF signal received by the first input end and / or the energy of the second RF signal received by the second input end to each of the process chambers.

[0011] In some embodiments, the power distribution module includes a plurality of power distribution units, and the plurality of power distribution units correspond one to one with the plurality of process chambers;

[0012] The power distribution unit includes a first filtering circuit and a second filtering circuit;

[0013] The input end of the first filter circuit is electrically connected to the first RF power supply, and the output end is electrically connected to the corresponding process chamber; the first filter circuit is used to isolate signals other than the first RF signal;

[0014] The input end of the second filter circuit is electrically connected to the second RF power supply, and the output end is electrically connected to the output end of the first filter circuit; the second filter circuit is used to isolate signals other than the second RF signal.

[0015] In some embodiments, the power distribution unit further includes a balancing circuit, which is disposed between the output end of the first filter circuit and the process chamber and is configured to change the resonance point of the circuit to avoid series resonance.

[0016] In some embodiments, the first filtering circuit includes a fifth capacitor, the second filtering circuit includes a sixth capacitor and a third inductor connected in parallel, and the balancing circuit includes a fourth inductor;

[0017] The first end of the fifth capacitor is electrically connected to the first RF power supply, the first end of the sixth capacitor and the first end of the third inductor are both electrically connected to the second RF power supply, the second end of the fifth capacitor, the second end of the sixth capacitor and the second end of the third inductor are all electrically connected to the first end of the fourth inductor, and the second end of the fourth inductor is electrically connected to the corresponding process chamber.

[0018] In some embodiments, the inductance of the fourth inductor is smaller than the inductance of the third inductor.

[0019] In some embodiments, the second power distribution subunit further includes an isolation circuit;

[0020] The input end of the isolation circuit is electrically connected to the input end of the second filtering circuit, and the output end of the isolation circuit is grounded; the isolation circuit is used to isolate the first radio frequency signal flowing from the first filtering circuit to the second filtering circuit.

[0021] In some embodiments, the isolation circuit includes a seventh capacitor;

[0022] A first end of the seventh capacitor is electrically connected to a first end of the sixth capacitor, and a second end of the seventh capacitor is grounded.

[0023] In some embodiments, the radio frequency power output circuit further includes a plurality of power compensation units; the plurality of power compensation units correspond one to one with the plurality of power distribution units;

[0024] The input end of the power compensation unit is electrically connected to the output end of the corresponding power distribution unit, and the output end of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

[0025] In some embodiments, the power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel;

[0026] The first end of the first variable capacitor and the first end of the second variable capacitor are both electrically connected to the output end of the corresponding power distribution unit, and the second end of the first variable capacitor and the second end of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber;

[0027] The signal output by the power distribution unit includes a first signal and a second signal, the frequency of the first signal being greater than the frequency of the second signal;

[0028] The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0029] In some embodiments, the frequency value of the first radio frequency signal ranges from 10 MHz to 100 MHz, and the frequency value of the second radio frequency signal ranges from 300 KHz to 500 KHz.

[0030] In some embodiments, the radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit;

[0031] The input end of the first RF matching circuit is electrically connected to the output end of the first RF power supply, and the output end of the first RF matching circuit is electrically connected to the first input end of the power distribution module;

[0032] The input end of the second RF matching circuit is electrically connected to the output end of the second RF power supply, and the output end of the second RF matching circuit is electrically connected to the second input end of the power distribution module.

[0033] In some embodiments, the first RF matching circuit includes a first capacitor, a second capacitor, and a first inductor;

[0034] The first end of the first capacitor and the first end of the second capacitor are both electrically connected to the output end of the first RF power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module;

[0035] The second radio frequency matching circuit includes a third capacitor, a fourth capacitor and a second inductor;

[0036] The first end of the third capacitor and the first end of the second inductor are both electrically connected to the output end of the second RF power supply, the second end of the third capacitor is grounded, the second end of the second inductor and the first end of the fourth capacitor are both electrically connected to the second input end of the power distribution module, and the second end of the fourth capacitor is grounded.

[0037] On the other hand, an embodiment of the present application provides a semiconductor process equipment including a plurality of independent process chambers and the above-mentioned radio frequency power output circuit;

[0038] The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly located in the chamber body and arranged opposite to each other;

[0039] Each output end of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0040] In some embodiments, the upper electrode assembly includes a cavity cover and a flow uniformity structure, the flow uniformity structure is fixed on one side of the cavity cover, and the cavity cover includes an air inlet block;

[0041] The process chamber also includes an annular insulation layer, an annular heating belt and multiple heating rods arranged on the side of the chamber cover away from the uniform flow structure; the inner ring of the annular insulation layer is used to expose the air inlet block of the chamber cover; the multiple heating rods are arranged in a circle around the annular insulation layer, part of the heating rods are arranged in the chamber cover, and the rest of the heating rods protrude from the upper surface of the chamber cover; the annular heating belt is arranged in a circle around the multiple heating rods.

[0042] An embodiment of the present application provides an RF power output circuit and semiconductor process equipment. The RF power output circuit is applied to the semiconductor process equipment. The first RF signal output by the first RF power supply and / or the second RF signal output by the second RF power supply can be evenly distributed to each process chamber after passing through a power distribution module, thereby improving the problem of low chamber matching caused by differences in RF systems and further improving thin film performance.

[0043] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0045] FIG1 is a schematic structural diagram of a dual-cavity PEALD provided by the prior art;

[0046] FIG2 is a schematic diagram of a radio frequency feeding structure of a chamber provided by the prior art;

[0047] FIG3 is a schematic structural diagram of a radio frequency power output circuit provided in an embodiment of the present application;

[0048] FIG4 is a schematic structural diagram of another radio frequency power output circuit provided in an embodiment of the present application;

[0049] FIG5 is a schematic structural diagram of a semiconductor process equipment provided in an embodiment of the present application;

[0050] FIG6 is a schematic structural diagram of a heating block of a chamber cover provided by the prior art;

[0051] FIG7 is a temperature rise curve diagram of heating using the heating block shown in FIG6 ;

[0052] FIG8 is a schematic structural diagram of an annular heating belt and a heating rod provided in an embodiment of the present application;

[0053] FIG9 is a top view of FIG8;

[0054] FIG10 is a schematic structural diagram of a heating rod and a cavity cover provided in an embodiment of the present application;

[0055] FIG11 is a schematic structural diagram of another heating rod and cavity cover provided in an embodiment of the present application;

[0056] FIG12 is a temperature rise curve diagram of heating using the annular heating belt and heating rod shown in FIG8 . DETAILED DESCRIPTION

[0057] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0058] In the embodiments of the present application, words such as "first" and "second" are used to distinguish identical or similar items with substantially the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present application, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0059] In the embodiments of the present application, the meaning of "plurality" is two or more, unless otherwise specifically defined. In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present application.

[0060] In the related art, the PEALD dual-chamber structure can be referred to as shown in Figure 1, where RC1 and RC2 are two physically isolated independent chambers. The process gas Gas flowing out of the Gas Panel (gas cabinet, not shown in Figure 1) above the RC1 and RC2 chambers is separated by pipelines and flows into the RC1 and RC2 chambers through the respective gas distribution devices of the RC1 and RC2 chambers (marked as 1 and 2 respectively); the PEALD dual-chamber structure also includes two independent RF power supplies S1 and S2, and two independent RF matching controllers Match1 and Match2. The RF energy provided by the RF power supplies S1 and S2 enters the RC1 and RC2 chambers respectively for process ignition after being matched by the RF matching controllers Match1 and Match2 respectively. The RC1 and RC2 chambers can generate RF plasma simultaneously or successively. The heating bases (heaters) of the RC1 and RC2 chambers are marked as 3 and 4 respectively, and the wafers on the heating bases of the RC1 and RC2 chambers are marked as 5 and 6 respectively. Isolation valves IV1 and IV2 are installed on the front-end exhaust lines of the RC1 and RC2 chambers, Fore line 1 (not labeled in Figure 1) and Fore line 2 (not labeled in Figure 1), respectively, as well as butterfly valves TV1 and TV2 that control the chamber pressure by opening and closing at different angles. This structure can achieve physical isolation between the RC1 and RC2 chambers, while independently controlling the exhaust speed of the RC1 and RC2 chambers and adjusting the process pressure of the RC1 and RC2 chambers separately. The inlet blocks (i.e., the inlet blocks) at the intersection of the channels for the process gas of the RC1 and RC2 chambers and the cleaning gas (generally NF3) of the RPS (Remote Plasma System) are labeled 7 and 8, respectively. Isolation valves IV3 and IV4 with independent switches are installed between the RPS and the inlet blocks, respectively. When thin films accumulate in chambers RC1 and RC2 and require cleaning, the cleaning gas NF3 flows from the RPS through two pipelines directly to chambers RC1 and RC2, respectively, achieving independent cleaning of chambers RC1 and RC2. In Figure 1, the gas inlet structure also includes a source bottle 9, and MFC stands for mass flow controller.

[0061] The RF feeding structure of one chamber in the PEALD dual chamber can be referred to as shown in Figure 2. In Figure 2, the process gas enters the chamber from the air inlet block 7 through the chamber lid (chamber cover) 16 and the showerhead (flow uniformity component) 17. The frequency of the RF Generator (RF power supply) is high frequency (for example, 13.56MHz). The RF Power (RF energy) it outputs is first transmitted to the RF Match (RF matcher) through the Cable (coaxial cable), and then fed to the upper electrode (RF Electrode) of the chamber through the RF copper bar 12, that is, the chamber lid (chamber cover) 16 shown in Figure 2. The heating base 11 is grounded as the lower electrode. After the RF signal is fed from the RF copper bar 12, plasma 10 is generated between the upper electrode and the lower electrode. In this RF system, the chamber cover 16 is connected to the RF as the upper electrode, and the heating base heater is grounded as the lower electrode. In Figure 2, the upper heating block is marked as 13, the ceramic insulating isolation block is marked as 14, and the chamber wall is marked as 15.

[0062] In the dual-cavity PEALD of the related technology, the RC1 and RC2 chambers shown in Figure 1 are provided with two RF power supplies S1 and S2. During the process, the RF energy is controlled by controlling the RF set power of the respective RF power supplies of the RC1 and RC2 chambers, that is, the RF input power (i.e., forward power, Psetting) is set in the process operation menu (recipe). This power is the initial output power of the RF power supply end (RF Generator). The output power is adjusted by the respective RF matchers of the RC1 and RC2 chambers (i.e., Match1 and Match2 shown in Figure 1). The adjustment goal is to make the reflected power (Preflected) lower than the set spec (specification), for example: Preflected <1% × Psetting, in the hope of achieving consistent feeding power of the RC1 and RC2 chambers.

[0063] Compared with the single-chamber PEALD process, the multi-chamber (for example, dual-chamber or quad-chamber) PEALD process has the problem of mismatch between multiple chambers. This mismatch is reflected in the process as inconsistent film performance between samples deposited in each chamber. For example, the wet etch rate (WER), thickness and stress of the films deposited in each chamber are mismatched, exceeding the spec range, which directly affects the application of the film; especially in applications such as 28nm spacer, double pattern (double exposure) below 28nm, and liner, there are very strict requirements for matching between chambers. Taking the dual-chamber PEALD equipment as an example, if a SiO2 film (TSV liner) is to be formed for the advanced packaging layer, the target thickness is The average deposition thickness of each ALD reaction cycle is about The difference in SiO2 thickness between two wafers deposited simultaneously in two chambers is required to be less than Average deposition thickness per cycle of ALD reaction, the difference between the two chambers is < Although within a certain range, the thickness difference can be reduced by adjusting the number of cycles (i.e., the number of cycles) between the two chambers, there is no doubt that high requirements are placed on the matching between the chambers. Differences in the gas transmission system, temperature control system, RF generation and transmission system of the two chambers may affect the matching degree of the two chambers. In addition, the above-mentioned TSV liner film generally requires stress (film stress) at -250±50MPa. On the basis of strictly meeting the film performance, the manufacturing of each equipment also needs to compress the equipment manufacturing cost, reduce the equipment operating cost (Cost of Ownership, CoO) and equipment consumables cost (Cost of Consumables, CoC).

[0064] In addition, with the increasing demand for equipment manufacturing costs, the PEALD dual-cavity method of related technologies, which uses two RF power supplies and two matching control systems, faces greater cost pressure. At the same time, the current equipment lacks means to adjust film properties (especially film stress). For example: The stress required for TSV liners (three-dimensional through-silicon via deposition of silicon dioxide protective layers) is generally -250±50MPa. Adjusting gas flow and process pressure has limited effect. Although increasing the RF power provided by the RF power supply can change the film stress, the improvement is limited and will lead to deterioration in thickness uniformity, film particles and other properties.

[0065] Based on the above, an embodiment of the present application provides a radio frequency power output circuit, which is applied to semiconductor process equipment. The semiconductor process equipment includes: multiple independent process chambers.

[0066] As shown in FIG3 , the RF power output circuit includes: a RF power supply module 20 and a power distribution module 22.

[0067] The RF power module 20 includes a first RF power supply 201 and a second RF power supply 202. The first RF power supply 201 is used to output a first RF signal, and the second RF power supply 202 is used to output a second RF signal. The frequency value of the first RF signal is greater than the frequency value of the second RF signal.

[0068] The power distribution module 22 includes a first input end, a second input end, and multiple output ends corresponding to multiple process chambers one by one; the first input end is electrically connected to the first RF power supply 201, and is used to receive the first RF signal output by the first RF power supply 201; the second input end is electrically connected to the second RF power supply 202, and is used to receive the second RF signal output by the second RF power supply 202; each output end is used to be electrically connected to the corresponding process chamber; the power distribution module 22 is used to evenly distribute the energy of the first RF signal received by the first input end and / or the energy of the second RF signal received by the second input end to each process chamber.

[0069] In a specific implementation, in the above-mentioned RF power supply module 20, the first RF power supply 201 is a high-frequency RF power supply, and the second RF power supply 202 is a low-frequency RF power supply. This application does not limit the frequency values ​​of the first RF signal and the second RF signal. For example, the frequency value of the first RF signal can be 13.56MHz, and the frequency value of the second RF signal can be 400KHz. Similarly, this application does not limit the specific structure and power value of the first RF power supply 201 and the second RF power supply 202. Since the output frequency of the first RF power supply 201 is relatively high, the power is correspondingly large. For example, the power value range of the first RF power supply 201 is set at 1500W to 5000W, with 3000W to 5000W being preferred; the power value range of the second RF power supply 202 is set at 100W to 1000W, with 500W to 1000W being preferred.

[0070] The present application does not limit the specific structure of the power distribution module 22, and the number of its output terminals is the same as the number of process chambers. If the number of process chambers is two, the RF power output circuit is applied to a dual-chamber semiconductor process equipment. In this case, the power distribution module 22 includes two output terminals, which can be called a twin-chamber RF power distribution system (TCPD), which is used to evenly distribute the energy of the first RF signal received by the first input terminal and / or the energy of the second RF signal received by the second input terminal to the two process chambers, while ensuring that the energy of the two different frequencies does not crosstalk. Of course, the number of process chambers can also be three, four or more, and the output terminals of the power distribution module 22 in the RF power output circuit are correspondingly three, four or more. It should be noted that the power distribution module 22 mainly realizes the even distribution of the energy of the RF signal received by the first input terminal and / or the energy of the RF signal received by the second input terminal to each process chamber. When only the first input terminal receives the RF signal, the power distribution module 22 evenly distributes the energy of the RF signal received by the first input terminal to each process chamber. When only the second input terminal receives a radio frequency signal, the power distribution module 22 evenly distributes the energy of the radio frequency signal received at the second input terminal to each process chamber. When both the first input terminal and the second input terminal receive radio frequency signals, the power distribution module 22 evenly distributes the energy of the radio frequency signal received at the first input terminal and the energy of the radio frequency signal received at the second input terminal to each process chamber.

[0071] Therefore, the power distribution module 22 is used to evenly distribute the energy of the first RF signal received at the first input end and / or the energy of the second RF signal received at the second input end to each process chamber in the following cases:

[0072] In the first case, in the RF power supply module 20, only the first RF power supply 201 outputs the first RF signal, and the second RF power supply 202 does not output the second RF signal. The power distribution module 22 is used to evenly distribute the energy of the first RF signal received at the first input end to each process chamber.

[0073] In the second case, in the RF power supply module 20, only the second RF power supply 202 outputs the second RF signal, and the first RF power supply 201 does not output the first RF signal. The power distribution module 22 is used to evenly distribute the energy of the second RF signal received at the second input end to each process chamber.

[0074] In the third case, in the RF power module 20, the first RF power supply 201 outputs a first RF signal and the second RF power supply 202 outputs a second RF signal, the power distribution module 22 is used to evenly distribute the energy of the first RF signal received at the first input end and the energy of the second RF signal received at the second input end to each process chamber.

[0075] An embodiment of the present application provides an RF power output circuit and semiconductor process equipment. The RF power output circuit is applied to the semiconductor process equipment. The first RF signal output by the first RF power supply 201 and / or the second RF signal output by the second RF power supply 202 can evenly distribute the energy of the first RF signal and / or the energy of the second RF signal to each process chamber after passing through the power distribution module 22, thereby improving the problem of low chamber matching caused by differences in RF systems and further improving thin film performance.

[0076] In addition, the RF power output circuit provided in the present application uses two RF power supplies with different frequency values, namely the first RF power supply 201 and the second RF power supply 202. Not only can the function of using one of the RF power supplies alone be realized, but the two RF power supplies can also be combined to achieve a better debugging method.

[0077] For example, regarding the aforementioned problem of the lack of means to adjust film properties (especially film stress) in related art equipment, methods such as adjusting gas flow and process pressure have limited effectiveness. Although increasing the RF power can change film stress, the improvement is limited and can lead to deterioration in thickness uniformity and film particle size.

[0078] In the present application, when it is necessary to optimize and adjust the film stress, the first RF power supply 201 in the RF power supply module 20 outputs a first RF signal, and the second RF power supply 202 outputs a second RF signal. The power distribution module 22 evenly distributes the energy of the first RF signal received at the first input terminal and the energy of the second RF signal received at the second input terminal to each process chamber, that is, evenly distributes the energy of the two different frequencies to each process chamber. The film stress can be adjusted by adjusting the power of the second RF power supply 202 (i.e., adjusting the low-frequency energy fed to the process chamber) without adjusting the power of the first RF power supply 201, thereby ensuring that the film stress performance is improved without reducing the thickness uniformity and film particle performance, thereby improving the film quality.

[0079] Therefore, the RF power output circuit provided in the embodiment of the present application can adjust the film properties such as film stress, wet etching rate, thickness uniformity, and film particles by adjusting the power of the first RF power supply 201 and / or the power of the second RF power supply 202; compared with the related art that adjusts the film properties by adjusting the power of the high-frequency RF power supply, the RF power output circuit provided in the embodiment of the present application adds a process debugging method, which can significantly improve the film quality. In addition, in the RF power output circuit provided in the embodiment of the present application, only one high-frequency first RF power supply 201 and one low-frequency second RF power supply 202 are provided, and all chambers share the first RF power supply 201 and the second RF power supply 202; compared with the related art structure in which each chamber uses one high-frequency power supply, the RF power output circuit provided in the embodiment of the present application saves the number of high-frequency power supplies, thereby reducing equipment costs.

[0080] The following uses a dual-cavity PEALD device as an example to compare the application of related technologies and this application. In the process of depositing SiO2 for TSV liner using a PEALD device, the related technology uses two of the same high-frequency RF power supplies (the output RF signal frequency is generally 13.56MHz) to feed RF signals to the dual cavities respectively; in the adjustment of film stress, the flow rate of the precursor gas (for example: source SAM24) and the reaction gas (for example: O2) has almost no adjustment effect on the film stress. Increasing the high-frequency RF power supply power (RF power), for example, from 500W to 1000W, can partially adjust the film stress, for example: from 200MPa to 0MPa; while the film stress requirement of the general TSV liner process is -280±50MPa, the adjustable range is quite different from the requirement; if in order to meet the film stress requirement, the high-frequency RF power supply power needs to be increased again; but it will lead to deterioration of thickness uniformity, film particles and other performance. In this application, two RF power sources with different output frequencies (e.g., 13.56 MHz and 400 kHz) are used. The RF energy fed into each chamber includes high-frequency (HF) and low-frequency (LF) RF energy. The high-frequency energy is used to adjust thickness uniformity and film properties such as grain size, while the low-frequency energy is used to adjust film stress. By adjusting the output power of the second RF power source, the stress requirements of the TSV liner can be met without adjusting the output power of the first RF power source 201. By adjusting the RF energy, especially the low-frequency energy, the film stress adjustment window can be significantly expanded, thereby enabling better process integration of the TSV liner film with the preceding and following layers.

[0081] When using PEALD equipment to deposit SiO2 for spacer (sidewall) processing, there are relatively strict requirements for the WER (Wet Etch Rate) range of the film. In the related art, the WER requirements can be met by adjusting the power of the high-frequency RF power supply and other process parameters, but the performance such as thickness uniformity and film particles will deteriorate. In the present application, the WER requirements can be met by adjusting the power of the low-frequency energy, i.e., the second RF power supply 202, on the premise of adjusting the power of the high-frequency energy, i.e., the first RF power supply 201, in a small range. Since the first RF power supply 201 and other process parameters do not change or change slightly, the performance such as thickness uniformity and film particles will remain basically constant.

[0082] In some embodiments, as shown in FIG. 3 , the RF power output circuit further includes: a first RF matching circuit 211 and a second RF matching circuit 212 .

[0083] The input end of the first RF matching circuit 211 is electrically connected to the output end of the first RF power supply 201 , and the output end of the first RF matching circuit 211 is electrically connected to the first input end of the power distribution module 22 ;

[0084] An input end of the second RF matching circuit 212 is electrically connected to an output end of the second RF power supply 202 , and an output end of the second RF matching circuit 212 is electrically connected to a second input end of the power distribution module 22 .

[0085] This application does not limit the specific structure of the first RF matching circuit 211 and the second RF matching circuit 212. The first RF matching circuit 211 and the second RF matching circuit 212 generally include an L-type matching network, a π-type (pi-type) matching network or a T-type matching network, etc., which can be selected according to actual requirements. The relevant description of the L-type matching network, the π-type matching network or the T-type matching network can refer to the existing technology and will not be described in detail here. The first RF matching circuit 211 maximizes the output power of the first RF power supply 201 and minimizes the reflection loss. The second RF matching circuit 212 maximizes the output power of the second RF power supply 202 and minimizes the reflection loss.

[0086] Exemplarily, referring to FIG4 , the first RF matching circuit 211 includes a first capacitor C1, a second capacitor C2, and a first inductor L1; wherein, the first end of the first capacitor C1 and the first end of the second capacitor C2 are both electrically connected to the output end of the first RF power supply 201, and the second end of the first capacitor C1 is grounded; the second end of the second capacitor C2 is electrically connected to the first end of the first inductor L1; and the second end of the first inductor L1 is electrically connected to the first input end of the power distribution module 22 (i.e., the first node N1 in FIG4 ).

[0087] The second RF matching circuit 212 includes a third capacitor C3, a fourth capacitor C4, and a second inductor L2; wherein the first end of the third capacitor C3 and the first end of the second inductor L2 are both electrically connected to the output end of the second RF power supply 202, and the second end of the third capacitor C3 is grounded; the second end of the second inductor L2 and the first end of the fourth capacitor C4 are both electrically connected to the second input end of the power distribution module 22 (i.e., the second node N2 in Figure 4); and the second end of the fourth capacitor C4 is grounded.

[0088] In the first RF matching circuit 211, the branch containing the second capacitor C2 and the first inductor L1 forms an L-shaped structure with the branch containing the first capacitor C1. The first RF matching circuit 211 is an L-type matching network circuit, which can provide wide-band impedance matching between the first RF power supply 201 and the load, and has a simple structure and is easy to implement. In the second RF matching circuit 212, the branch containing the third capacitor C3, the branch containing the second inductor L2, and the branch containing the fourth capacitor C4 form a Pi-shaped structure. The second RF matching circuit 212 is a Pi-type matching network circuit, which can achieve more precise matching and a lower error rate.

[0089] It should be noted that the above-mentioned "first end" refers to the circuit diagram structure. When the components (inductors or capacitors) are arranged in the vertical direction, the upper end is the first end and the lower end is the second end; when the components (inductors or capacitors) are arranged in the horizontal direction, the left end is the first end and the right end is the second end. For example, in Figure 3, the first capacitor C1 is arranged in the vertical direction, with the upper end being the first end and the lower end being the second end; in Figure 3, the second capacitor C2 is arranged in the horizontal direction, with the left end being the first end and the right end being the second end; in Figure 3, the first inductor L1 is arranged in the horizontal direction, with the left end being the first end and the right end being the second end. The meanings of the first end and the second end of other inductors or capacitors are similar to this and will not be explained one by one later.

[0090] In one or more embodiments, as shown in FIG. 3 , the power distribution module 22 includes a plurality of power distribution units, and the plurality of power distribution units correspond to the plurality of process chambers 24 on a one-to-one basis.

[0091] As shown in FIG4 , the power distribution unit includes a first filter circuit 221 and a second filter circuit 222 . The first filter circuit 221 has an input electrically connected to the first RF power source 201 and an output electrically connected to the corresponding process chamber. The first filter circuit 221 is configured to isolate signals other than the first RF signal. The second filter circuit 222 has an input electrically connected to the second RF power source 202 and an output electrically connected to the output of the first filter circuit 221 . The second filter circuit 221 is configured to isolate signals other than the second RF signal. FIG4 illustrates an example in which the power distribution module 22 includes two power distribution units, each electrically connected to the bases 242 of two process chambers.

[0092] Each of the power distribution units is correspondingly provided with a process chamber, and high-frequency energy and / or low-frequency energy are fed into the corresponding process chamber simultaneously.

[0093] The first RF energy (i.e., high-frequency energy) generated by the first RF power supply 201 and / or the second RF energy (i.e., low-frequency energy) generated by the second RF power supply 202 can be evenly distributed to each process chamber after passing through multiple power distribution units. At the same time, multiple power distribution units can also avoid crosstalk between energies of two different frequencies.

[0094] The first filter circuit 221 can isolate and prevent low-frequency energy (e.g., 400 kHz) from flowing through, while ensuring that high-frequency energy (e.g., 13.56 MHz) flows through, and at the same time, prevent low-frequency energy from flowing toward the first RF power supply 201. The second filter circuit 222 can filter out high-frequency energy (e.g., 13.56 MHz), that is, prevent high-frequency energy from flowing through, while ensuring that low-frequency energy (e.g., 400 kHz) flows through, and at the same time, prevent high-frequency energy from flowing toward the second RF power supply 202.

[0095] In specific implementations, series resonance can easily form between the power distribution unit and the chamber. If series resonance occurs during the chamber's ignition process, excessive current in the circuit can easily burn out components, significantly reducing safety and device quality. In some embodiments, as shown in FIG4 , the power distribution unit also includes a balancing circuit 223, which is disposed between the output of the first filter circuit 221 and the process chamber 24 and is used to shift the circuit's resonance point to avoid series resonance. This balancing circuit 223 shifts the circuit's resonance point, thereby avoiding series resonance and improving safety and device quality.

[0096] To simplify the structure, facilitate implementation, and further reduce costs, in some embodiments, as shown in FIG4 , the first filter circuit 221 includes a fifth capacitor C5, the second filter circuit 222 includes a sixth capacitor C6 and a third inductor L3 connected in parallel, and the balancing circuit 223 includes a fourth inductor L4; wherein, a first end of the fifth capacitor C5 is electrically connected to the first RF power supply 201, a first end of the sixth capacitor C6 and a first end of the third inductor L3 are both electrically connected to the second RF power supply 202, a second end of the fifth capacitor C5, a second end of the sixth capacitor C6, and a second end of the third inductor L3 are all electrically connected to a first end of the fourth inductor L4, and a second end of the fourth inductor L4 is electrically connected to a corresponding process chamber 24.

[0097] The larger the inductance of the inductor, the greater the loss of high-frequency energy. In order to minimize the loss of the first RF energy (ie, high-frequency energy), in some embodiments, the inductance of the fourth inductor L4 is smaller than the inductance of the third inductor L3.

[0098] In order to prevent the first RF energy (i.e., high-frequency energy) flowing out of the first filter circuit 221 from flowing into the second RF power supply 201 and thus affecting the second RF power supply 202, in some embodiments, as shown in FIG4 , the power distribution unit further includes an isolation circuit 224, wherein an input end of the isolation circuit 224 is electrically connected to an input end of the second filter circuit 222, and an output end of the second filter circuit 222 is grounded; the isolation circuit 224 is configured to isolate the first RF signal flowing from the first filter circuit 221 to the second filter circuit 222; in this way, the first RF energy (i.e., high-frequency energy) flowing out of the first filter circuit 221 is grounded after passing through the second filter circuit 222 and the isolation circuit 224, thereby preventing it from flowing into the second RF power supply 202 and thus avoiding affecting the second RF power supply 202.

[0099] In order to effectively isolate high-frequency energy, in some embodiments, as shown in FIG. 4 , the isolation circuit 224 includes a seventh capacitor C7 ; a first end of the seventh capacitor C7 is electrically connected to a first end of the sixth capacitor C6 , and a second end of the seventh capacitor C7 is grounded.

[0100] In order to further ensure that the power of the RF signal output by the RF power output circuit to each process chamber is the same, thereby further improving the process matching degree of each chamber, in one or more embodiments, as shown in Figure 3, the RF power output circuit also includes: multiple power compensation units 23; multiple power compensation units 23 and multiple power distribution units correspond one to one.

[0101] The input end of the power compensation unit 23 is electrically connected to the output end of the corresponding power distribution unit, and the output end of the power compensation unit 23 is used to electrically connect to the corresponding process chamber 24; each power compensation unit 23 is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit 23 to the corresponding process chamber 24 is the same.

[0102] The present application does not limit the specific structure of the power compensation unit, which can be selected based on actual needs. Each power compensation unit 23 outputs an RF signal to a corresponding process chamber 24. Each power compensation unit 23 can adjust the impedance value based on the process results, thereby changing the first RF energy value and / or the second RF energy value flowing into each process chamber 24, thereby ensuring that the power of the RF signal output to each process chamber 24 is the same, thereby achieving RF power compensation for each process chamber 24.

[0103] In some embodiments, in order to further simplify the structure and facilitate implementation, the power compensation unit 23 may include a first variable capacitor and a second variable capacitor in parallel; the first end of the first variable capacitor and the first end of the second variable capacitor are both electrically connected to the output end of the corresponding power distribution unit, and the second end of the first variable capacitor and the second end of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber 24.

[0104] The signal output by the power distribution unit includes a first signal and a second signal, the frequency of the first signal is greater than the frequency of the second signal; the first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0105] By adjusting the impedance value of the first variable capacitor and the second variable capacitor (i.e., the effective capacitance value connected to the loop), the current values ​​of the two branches where the first variable capacitor and the second variable capacitor are located can be adjusted respectively, thereby changing the energy value of the first signal (i.e., the high-frequency energy value) and the energy value of the second signal (i.e., the low-frequency energy value), and then changing the total energy value of the RF signal flowing to the process chamber 24, and ultimately achieving the purpose of power compensation and realizing chamber matching.

[0106] In some embodiments, the frequency value of the first RF signal ranges from 10 MHz to 100 MHz. For example, the frequency value of the first RF signal can be 10 MHz, 13.56 MHz, 15 MHz, 30 MHz, or 50 MHz, etc., and 13.56 MHz is generally used more often. The frequency value of the second RF signal ranges from 300 KHz to 500 KHz. For example, the frequency value of the second RF signal can be 300 KHz, 400 KHz, or 500 KHz, etc., and 400 KHz is generally used more often.

[0107] An embodiment of the present application further provides a semiconductor process device comprising a plurality of independent process chambers and the above-mentioned radio frequency power output circuit.

[0108] As shown in reference figure 5, the process chamber includes a chamber body 249 and an upper electrode assembly and a lower electrode assembly located in the chamber body 249 and arranged opposite to each other; each output end of the power distribution module of the RF power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0109] The upper electrode assembly may include a cavity cover 243 and a flow-uniform structure 241 as shown in FIG. 5 , wherein the flow-uniform structure 241 is fixed on one side of the cavity cover 243 ; the lower electrode assembly may include a base 242 as shown in FIG. 5 .

[0110] The RF power output circuit is used to feed RF signals to the upper electrode assembly or the lower electrode assembly of each process chamber. Each output end of the power distribution module of the RF power output circuit can be electrically connected to the upper electrode assembly of the corresponding process chamber, in which case the lower electrode assembly of each process chamber is grounded; or each output end of the power distribution module of the RF power output circuit can be electrically connected to the lower electrode assembly of the corresponding process chamber, in which case the upper electrode assembly of each process chamber is grounded; or some output ends of the power distribution module of the RF power output circuit are electrically connected to the upper electrode assembly of the corresponding process chamber (in which case the lower electrode assembly of this part of the process chamber is grounded), and the remaining output ends are electrically connected to the lower electrode assembly of the corresponding process chamber (in which case the upper electrode assembly of this part of the process chamber is grounded), without specific limitation here.

[0111] In order to further improve the chamber matching, each output end of the power distribution module of the RF power output circuit can be electrically connected to the base 242 of the corresponding process chamber, and the chamber cover 243 and the uniform flow structure 241 of each process chamber are grounded; the first RF energy and / or the second RF energy is fed into the base 242, thereby forming a negative bias on the wafer surface. Under the action of the negative bias, the deposited reactants are denser, which is more conducive to improving the film quality (for example: WER and stress film performance).

[0112] When the output end of the power distribution module of the RF power output circuit is electrically connected to the upper electrode assembly, the output end can be electrically connected to the flow distribution structure 241, or can also be electrically connected to the cavity cover 243, which is not limited here. When the output end of the power distribution module of the RF power output circuit is electrically connected to the lower electrode assembly, the output end can be electrically connected to the base 242. The specific location electrically connected to the base 242 is not limited. For example, in order to facilitate implementation and not occupy additional space, it can be electrically connected to the base shaft (heater shaft).

[0113] For the detailed description of the RF power output circuit, please refer to the aforementioned embodiment and will not be repeated here.

[0114] The semiconductor process equipment provided in the embodiment of the present application is an atomic layer deposition device, which may also include an air intake structure, an online cleaning structure, and an exhaust gas exhaust structure. The air intake structure, the online cleaning structure, and the exhaust gas exhaust structure can refer to the existing technology and will not be described here.

[0115] The semiconductor process equipment provided in the embodiments of the present application is used for thin film deposition, thereby improving the problem of low chamber matching caused by differences in RF systems and thereby enhancing film performance. Furthermore, when the power distribution module of the RF power output circuit is used to evenly distribute the first RF signal energy output by the first RF power supply and the second RF signal energy output by the second RF power supply to each process chamber, the stress performance of the film can be improved without compromising thickness uniformity and film particle performance, significantly enhancing film quality. At the same time, the number of high-frequency power supplies can be reduced, thereby reducing equipment costs.

[0116] In related art, the chamber cover is the first passage for source gases, process gases, and RF energy before entering the chamber. Therefore, temperature control of the chamber cover is crucial. As shown in Figure 6 , four independent heating blocks 13 are installed on the upper surface of the chamber cover. These four heating blocks are connected in series to heat the chamber cover. The heating blocks can be made of a heating plate. In Figure 6 , the air inlet component is labeled 7, and the exposed area on the chamber cover not covered by the heating blocks 13 is labeled 130.

[0117] Take the chamber cover plate temperature ramp during the PEALD (Polyurethane Evaporation) SiN film deposition process as an example. In this process, the heating base temperature is 450°C, and the chamber cover plate set temperature is 200°C. As shown in Figure 7, four heating plates heat the chamber cover plate. In the first stage (step 1), from 0 min to t1 min, the chamber cover plate temperature rises from room temperature (25°C) to the set temperature of 200°C. Then, the heating stage enters the holding stage. Due to inertia, the temperature reaches a maximum of approximately 215°C in the second stage (step 2). Using PID (Proportional Integral Derivative) control, the temperature gradually returns to the set temperature of 200°C, taking (t2-t1) min. Because the heating plate power is fixed, the chamber cover plate temperature ramps up quickly in the first stage, potentially affecting fragile components within the chamber. Furthermore, the maximum temperature often exceeds the set temperature significantly, resulting in a longer setback time and a longer overall ramp-up time, which reduces production capacity.

[0118] In the related art, the structure of a heating block is provided on the chamber cover, which has the disadvantages of a single heating method and poor temperature control accuracy due to the poor repeatability of the heating block process. At the same time, this heating method also has a certain impact on the RF output. The heating element and the temperature control element will interfere with the RF. In the actual process, there have been many problems with film performance fluctuations caused by the heating belt. In the actual process, it was found that when the RF setting power of the two chambers is the same, there are certain differences in the film performance (thickness, thickness uniformity, WER, stress, etc.) of the two chambers. There are many reasons for this difference, which may be related to the hardware differences between the two chambers themselves, the actual RF feed energy differences, insufficient heating and temperature control accuracy, and untimely temperature feedback.

[0119] In order to improve the temperature control accuracy and reduce the heating time, in some embodiments, in combination with Figures 5, 8 and 9, the chamber cover 243 includes an air inlet block 248; the process chamber also includes an annular insulation layer 240, an annular heating belt 245 and a plurality of heating rods 244 arranged on the side of the chamber cover 243 away from the uniform flow structure 241; the inner ring of the annular insulation layer 240 is used to expose the air inlet block 248 of the chamber cover 243; the plurality of heating rods 244 are arranged in a circle around the annular insulation layer 240, a part of the heating rod 244 is arranged in the chamber cover 243, and the rest protrudes from the upper surface of the chamber cover 243; the annular heating belt 245 is arranged in a circle around the plurality of heating rods 244.

[0120] In order to improve the uniformity of heating, multiple heating rods 244 can be evenly arranged around the annular insulation layer 240. The angle between the heating rods 244 and the upper surface of the cavity cover 243 is not limited. For example, the heating rods 244 can be arranged perpendicular to the upper surface of the cavity cover 243. In this case, the heating rods 244 are vertically inserted into the cavity cover 243; or the heating rods 244 can be arranged at an acute angle to the upper surface of the cavity cover 243. In this case, the heating rods 244 are obliquely inserted into the cavity cover 243. The direction of oblique insertion is not limited here. It can be obliquely inserted into the cavity cover 243 in a direction away from the center of the cavity cover 243 as shown in Figure 10, or obliquely inserted into the cavity cover 243 in a direction close to the center of the cavity cover 243 as shown in Figure 11. In order to save space, the heating rod 244 shown in Figure 5 can be set vertically to the upper surface of the cavity cover 243; in order to improve the temperature uniformity of the cavity cover 243, the heating rod 244 shown in Figure 11 can be inserted obliquely into the cavity cover 243 in the direction close to the center of the cavity cover 243.

[0121] The number, heating power, and specific placement of the heating rods 244 can be adjusted based on process temperature requirements. For example, the number of heating rods 244 can be 5 to 10, with 6 to 8 being preferred. The power of the heating rods 244 can be 300W to 1000W, with 400W to 600W being preferred. Furthermore, the insertion angle and depth of the heating rods 244 can be determined based on the shape and thickness of the chamber cover 243 and the flow distribution structure 241.

[0122] To protect the heating rod and extend its service life, as shown in FIG5 , the process chamber may further include a ceramic cylinder 247 , which surrounds the heating rod 244 to provide protection and facilitate insertion and removal. As shown in FIG5 , the chamber cover 243 may further include an annular insulating layer 246 , which isolates the annular heating belt 245 from the chamber wall of the chamber body 249 , protecting the annular heating belt 245 .

[0123] The embodiment of the present application provides a heating structure that integrates a heating rod 244 and an annular heating belt 245. The annular heating belt 245 can be used to heat the cavity cover 243 from room temperature to a first preset temperature value, with a lower heating rate during this stage. The heating rod 244 can then be used to heat the cavity cover 243 from the first preset temperature value to a second preset temperature value, with a higher heating rate during this stage. Finally, the annular heating belt 245 can be used to heat the cavity cover 243 from the second preset temperature value to the target temperature value. Due to inertia, the temperature of the cavity cover 243 will continue to rise from the target temperature value to a maximum value, and then the PID control method can be used to adjust the temperature back to near the target temperature value. Because the heating rate of heating rod 244 is greater than that of annular heating belt 245, using annular heating belt 245 to heat the chamber cover 243 during the period from the second preset temperature value to the target temperature value can reduce the subsequent maximum temperature reached due to inertia, thereby shortening the temperature recovery time, saving overall warm-up time, shortening the recovery time after chamber PM (maintenance) or downtime, and improving machine utilization. In addition, using annular heating belt 245 to heat the chamber cover 243 during the period from room temperature to the first preset temperature value, due to its slow heating rate and low temperature rise rate, it can protect the fragile components in the chamber as much as possible and extend their service life.

[0124] Taking the heating process of the chamber cover 243 during the PEALD process of forming a SiN thin film as an example, the temperature of the susceptor 242 in this process is 450°C, and the set temperature of the chamber cover 243 is 200°C. During the heating process adopted in the embodiment of the present application, the first preset temperature value can be set to 100°C, the second preset temperature value can be set to 180°C, the target temperature value is 200°C, and the maximum temperature during the heating process is 205°C. Compared with the maximum temperature of 215°C in the aforementioned related art, the maximum temperature reached during the heating process is significantly reduced, thereby reducing the callback time for the temperature to fall from the maximum value to the target temperature value, saving the overall heating time.

[0125] An embodiment of the present application further provides a temperature control method for semiconductor process equipment, comprising:

[0126] S1 . Referring to Step 1 shown in FIG. 12 , during a time period of 0 min to t3 min, the annular heating belt 245 is controlled to heat, so that the temperature of the chamber cover 243 rises from room temperature to a first preset temperature value.

[0127] The room temperature is generally 25°C, and the range of the first preset temperature value may include 90°C to 110°C. For example, the first preset temperature value may be 90°C, 100°C or 110°C, etc., which can be determined according to actual conditions.

[0128] S2. Referring to the Step 2 stage shown in FIG12 , during the time period t3 min-t4 min, the annular heating belt 245 is controlled to stop heating, and the heating rod 244 is controlled to heat, so that the temperature of the cavity cover 243 rises from the first preset temperature value to the second preset temperature value; the heating rate of the heating rod 244 is greater than the heating rate of the annular heating belt 245.

[0129] The second preset temperature value may range from 170° C. to 190° C. For example, the second preset temperature value may be 170° C., 180° C., or 190° C., etc., and may be determined according to actual conditions.

[0130] S3, referring to the Step 3 stage shown in FIG12, during the time period t4 min-t5 min, the heating rod 244 is controlled to stop heating, and the annular heating belt 245 is controlled to heat, so that the temperature of the cavity cover 243 rises from the second preset temperature value to the target temperature value.

[0131] The target temperature value may range from 195° C. to 205° C. For example, the target temperature value may be 195° C., 200° C., or 205° C., etc., and may be determined according to actual conditions.

[0132] The aforementioned temperature control method, on the one hand, reduces the maximum temperature subsequently reached due to inertia, thereby shortening the temperature recovery time, saving overall warm-up time, and shortening the recovery time after a chamber PM (maintenance) or downtime (downtime), thereby improving machine utilization. On the other hand, during the stage where the temperature of the chamber cover 243 rises from room temperature to the first preset temperature value, the annular heating belt 245 is used for heating. Due to its slow heating rate and low temperature rise rate, it can protect the fragile components within the chamber as much as possible and extend their service life.

[0133] It should be noted that, after the above step S3, the temperature control method further includes:

[0134] S4, referring to the Step 4 stage shown in FIG12, during the time period t5 min-t6 min, the PID control method is used to adjust the temperature so that the temperature returns to the target temperature value.

[0135] The PID control method is widely used in temperature control, water level control, flight attitude control and other fields. For related instructions, please refer to the existing technology and will not be repeated here.

[0136] It should be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0137] References in this application to "one embodiment," "an embodiment," or "one or more embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of this application. Furthermore, please note that instances of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0138] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should all be included within the scope of the claims of the present application.

Claims

1. A radio frequency power output circuit, characterized in that Applied to semiconductor process equipment, the semiconductor process equipment includes: a plurality of independent process chambers; the radio frequency power output circuit includes: A radio frequency power supply module, including a first radio frequency power supply and a second radio frequency power supply. The first radio frequency power supply is used to output a first radio frequency signal, and the second radio frequency power supply is used to output a second radio frequency signal, and the frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal. A power distribution module, including a first input terminal, a second input terminal, and a plurality of output terminals corresponding to the plurality of process chambers one by one; the first input terminal is electrically connected to the first radio frequency power supply for receiving the first radio frequency signal output by the first radio frequency power supply; the second input terminal is electrically connected to the second radio frequency power supply for receiving the second radio frequency signal output by the second radio frequency power supply; each output terminal is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first radio frequency signal received by the first input terminal and / or the energy of the second radio frequency signal received by the second input terminal to each process chamber.

2. The radio frequency power output circuit according to claim 1, wherein The power distribution module includes a plurality of power distribution units, and the plurality of power distribution units correspond to the plurality of process chambers one by one. The power distribution unit includes a first filter circuit and a second filter circuit. The input terminal of the first filter circuit is electrically connected to the first radio frequency power supply, and the output terminal is electrically connected to the corresponding process chamber; the first filter circuit is used to isolate signals other than the first radio frequency signal. The input terminal of the second filter circuit is electrically connected to the second radio frequency power supply, and the output terminal is electrically connected to the output terminal of the first filter circuit; the second filter circuit is used to isolate signals other than the second radio frequency signal.

3. The radio frequency power output circuit according to claim 2, wherein The power distribution unit further includes a balance circuit, and the balance circuit is arranged between the output terminal of the first filter circuit and the process chamber, and is used to change the resonance point of the circuit to avoid series resonance.

4. The radio frequency power output circuit according to claim 3, wherein The first filter circuit includes a fifth capacitor, the second filter circuit includes a sixth capacitor and a third inductor connected in parallel, and the balance circuit includes a fourth inductor. Wherein, the first end of the fifth capacitor is electrically connected to the first radio frequency power supply, the first ends of the sixth capacitor and the third inductor are both electrically connected to the second radio frequency power supply, the second ends of the fifth capacitor, the second ends of the sixth capacitor and the second end of the third inductor are all electrically connected to the first end of the fourth inductor, and the second end of the fourth inductor is electrically connected to the corresponding process chamber.

5. The radio frequency power output circuit according to claim 4, wherein The inductance value of the fourth inductor is less than the inductance value of the third inductor.

6. The radio frequency power output circuit according to claim 4, wherein, The power distribution unit further includes an isolation circuit. The input terminal of the isolation circuit is electrically connected to the input terminal of the second filter circuit, and the output terminal of the isolation circuit is grounded; the isolation circuit is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit.

7. The radio frequency power output circuit according to claim 6, characterized in that The isolation circuit includes a seventh capacitor. The first end of the seventh capacitor is electrically connected to the first end of the sixth capacitor, and the second end of the seventh capacitor is grounded.

8. The radio frequency power output circuit according to any one of claims 2-7, characterized in that, The radio frequency power output circuit further includes a plurality of power compensation units; the plurality of power compensation units correspond to the plurality of power distribution units one by one; The input end of the power compensation unit is electrically connected to the output end of the corresponding power distribution unit, and the output end of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

9. The radio frequency power output circuit according to claim 8, wherein The power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel; The first end of the first variable capacitor and the first end of the second variable capacitor are both electrically connected to the output end of the corresponding power distribution unit, and the second end of the first variable capacitor and the second end of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber; The signal output by the power distribution unit includes a first signal and a second signal, and the frequency of the first signal is greater than the frequency of the second signal; The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

10. The radio frequency power output circuit according to any one of claims 1-7, characterized in that, The frequency value range of the first radio frequency signal includes 10 MHz to 100 MHz, and the frequency value range of the second radio frequency signal includes 300 KHz to 500 KHz.

11. The radio frequency power output circuit according to any one of claims 1-7, characterized in that The radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit; The input end of the first radio frequency matching circuit is electrically connected to the output end of the first radio frequency power supply, and the output end of the first radio frequency matching circuit is electrically connected to the first input end of the power distribution module; The input end of the second radio frequency matching circuit is electrically connected to the output end of the second radio frequency power supply, and the output end of the second radio frequency matching circuit is electrically connected to the second input end of the power distribution module.

12. The radio frequency power output circuit according to claim 11, wherein The first radio frequency matching circuit includes a first capacitor, a second capacitor and a first inductor; Wherein, the first end of the first capacitor and the first end of the second capacitor are both electrically connected to the output end of the first radio frequency power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module; The second radio frequency matching circuit includes a third capacitor, a fourth capacitor and a second inductor; Wherein, the first end of the third capacitor and the first end of the second inductor are both electrically connected to the output end of the second radio frequency power supply, the second end of the third capacitor is grounded, the second end of the second inductor and the first end of the fourth capacitor are both electrically connected to the second input end of the power distribution module, and the second end of the fourth capacitor is grounded.

13. A semiconductor process equipment, characterized in that, It includes a plurality of independent process chambers and the radio frequency power output circuit according to any one of claims 1-12; The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly which are oppositely arranged inside the chamber body; Each output end of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

14. The semiconductor process equipment according to claim 13, wherein, The upper electrode assembly includes a cavity cover and a flow homogenizing structure. The flow homogenizing structure is fixed on one side of the cavity cover, and the cavity cover includes an air inlet block; The process chamber further includes an annular heat insulation layer, an annular heating belt, and a plurality of heating rods disposed on the side of the cavity cover away from the flow homogenizing structure. The inner ring of the annular heat insulation layer is used to expose the air inlet block of the cavity cover. The plurality of heating rods are arranged in a circle around the annular heat insulation layer. A part of the heating rod is disposed inside the cavity cover, and the rest protrudes from the upper surface of the cavity cover; The annular heating belt is arranged in a circle around the plurality of heating rods.

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