Colloidal quantum dot-based optical amplification photoelectric device and infrared photodetector using same

Abstract

One embodiment of the present invention provides a colloidal quantum dot-based optical amplification photoelectric device and an infrared photodetector using same. The colloidal quantum dot-based optical amplification photoelectric device according to an embodiment of the present invention can achieve a quantum efficiency of approximately 400% in the infrared region (900–1000 nm) by using a quantum tunneling effect that occurs when photo-generated holes are accumulated in an organic semiconductor-based hole transport layer and a strong electric field is applied locally.

Description

Colloidal quantum dot-based light-amplifying photovoltaic device and infrared photodetector using the same

[0001] The present invention relates to a colloidal quantum dot-based light amplification photoelectric device and an infrared photodetector using the same.

[0002] Infrared detectors were primarily used in military and security cameras, but are now also being used in vehicle cameras. Infrared detectors are categorized into thermal and photonic detectors.

[0003] A photonic sensor detects an electrical signal obtained by exciting electrons within a semiconductor material to a high energy level when infrared rays incident on the material excite the material, and has a fast response speed, high detection capability, and wavelength dependence of sensitivity.

[0004] Important parameters of infrared detectors vary depending on the application, but include quantum efficiency, dark current, and spectral bandwidth.

[0005] At this time, typical semiconductor photodetectors (InSb, HgCdTe, InAs / GaAs), quantum well infrared photodetectors (QWIPs), InAs / GaAs quantum dot photodetectors (QDIPs), and InAs / GaSb superlattice photodetectors can have relatively wide bandwidths.

[0006] At this time, infrared (IR) photodetectors (PDs) have potential applications in color imaging, industrial inspection, optical communications, autonomous vehicles, and bioimaging, but currently commercialized infrared photodetectors have the disadvantage of being difficult to use for general purposes due to expensive manufacturing and operating costs.

[0007] As an alternative, quantum dots (QDs) are attracting attention as next-generation infrared photodetector materials due to their advantages such as ease of synthesis, solution processability, high photoelectric conversion rate, and tunability of absorption wavelength range.

[0008] However, current colloidal quantum dots have several challenging problems, such as the difficulty of wet synthesis due to the limited selection of precursors, and the difficulty of controlling partial dangling bonds and defects on the surface.

[0009] Photodetector devices using colloidal quantum dots with these characteristics have the problem of having relatively low quantum efficiency.

[0010] Therefore, many challenges remain in the development of infrared photodetectors using colloidal quantum dots with high quantum efficiency.

[0011] <Prior Art Document> (Patent Document 1) Republic of Korea Patent Publication No. 10-2002-0076728

[0012] The technical problem to be achieved by the present invention is to provide a quantum dot-based optical amplification photoelectric element that increases the quantum efficiency by increasing the signal to noise ratio through the optical signal amplification phenomenon in order to increase the quantum efficiency of a quantum dot structure infrared photodetector.

[0013] The technical problems to be solved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0014] To achieve the above technical task, one embodiment of the present invention provides a colloidal quantum dot-based light amplification photoelectric device.

[0015] According to one embodiment of the present invention, the colloidal quantum dot-based light amplification photovoltaic device comprises: a substrate; a first electrode layer formed on the substrate; an electron transport layer positioned on the first electrode layer; a photoactive layer positioned on the electron transport layer, the photoactive layer including colloidal quantum dots; a hole transport layer positioned on the photoactive layer, the hole transport layer including an organic semiconductor compound; and a second electrode layer positioned on the hole transport layer, wherein the second electrode layer may be composed of a material having an energy level difference of 0.8 (eV) or more from a valence band energy level of the hole transport layer.

[0016] Additionally, according to one embodiment of the present invention, the first electrode layer may include a transparent conductive electrode.

[0017] Additionally, according to one embodiment of the present invention, the electron transport layer may include at least one of a metal oxide, a metal nitride, and a metal oxynitride.

[0018] Additionally, according to one embodiment of the present invention, the electron transport layer may include an electron transport material in the form of nanoparticles or bulk.

[0019] In addition, according to one embodiment of the present invention, the colloidal quantum dot of the photoactive layer may include at least one selected from the group consisting of group 3-5 (III-V) compounds, group 2-6 (II-VI) compounds, and group 4-6 (IV-VI) compounds.

[0020] In addition, according to one embodiment of the present invention, the hole transport layer may include at least one selected from the group consisting of PTB7 (Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]), PTAA (Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine), and an organic semiconductor compound.

[0021] In addition, according to one embodiment of the present invention, the second electrode layer may include at least one selected from the group consisting of aluminum, calcium, and a conductive material having a valence band energy level difference of 0.8 (eV) or more with respect to the energy level of the hole transport layer.

[0022] In order to achieve the above technical task, another embodiment of the present invention provides a high-sensitivity infrared photodetector.

[0023] The high-sensitivity infrared photodetector according to one embodiment of the present invention may include the colloidal quantum dot-based light amplification photoelectric element.

[0024] A colloidal quantum dot-based light amplification photovoltaic device according to one embodiment of the present invention can have a quantum efficiency of approximately 400% in the infrared region (900 to 1000 nm) by accumulating holes generated by light in a hole transport layer based on an organic semiconductor and locally applying a strong electric field to cause a quantum tunneling effect.

[0025] In addition, the infrared photodetector according to one embodiment of the present invention can improve its performance as a photodetector by increasing the signal to noise ratio through signal amplification.

[0026] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the detailed description of the present invention or the composition of the invention described in the claims.

[0027] Figure 1 is a schematic diagram illustrating a colloidal quantum dot-based light amplification photovoltaic device.

[0028] Figure 2 is a graph showing the difference in quantum efficiency according to (a) a general diode structure and (b) an optical amplifier structure.

[0029] Figure 3 is a schematic diagram of carrier movement according to (a) a general diode structure and (b) an optical amplifier structure.

[0030] Figure 4 shows current-voltage curve data according to (a) a general diode structure and (b) an optical amplifier structure.

[0031] Hereinafter, the present invention will be described with reference to the attached drawings. However, the present invention can be implemented in various different forms and is therefore not limited to the embodiments described herein. In the drawings, irrelevant parts have been omitted for clarity of description, and similar parts have been designated with similar reference numerals throughout the specification.

[0032] Throughout the specification, when a part is said to be "connected (connected, contacted, or coupled)" to another part, this includes not only cases where it is "directly connected," but also cases where it is "indirectly connected" with another member in between. Furthermore, when a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise specifically stated.

[0033] The terminology used herein is merely used to describe specific embodiments and is not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this specification, it should be understood that the terms "comprises" or "has" indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0034]

[0035] Below, the present invention will be described with reference to the drawings presented in this specification. Note that the drawings may be exaggerated to illustrate the features of the present invention. In such cases, it is preferable to interpret them in light of the overall intent of this specification.

[0036]

[0037] Colloidal quantum dots (CQDs) present several challenging issues, including the difficulty of wet synthesis due to limited precursor selection, the difficulty of controlling partial dangling bonds and defects on the surface, and therefore are unsuitable as materials for infrared photodetectors. Accordingly, the present invention provides a colloidal quantum dot-based light amplification optoelectronic device that utilizes the phenomenon of quantum tunneling by accumulating photo-generated charges in an organic semiconductor-based hole transport layer and locally applying a strong electric field.

[0038]

[0039] A colloidal quantum dot-based light amplifying photovoltaic device according to one embodiment of the present invention is described.

[0040]

[0041] Figure 1 is a schematic diagram illustrating a colloidal quantum dot-based light amplification photovoltaic device.

[0042] Referring to FIG. 1, a colloidal quantum dot-based light amplification photovoltaic device (100) according to an embodiment of the present invention includes: a substrate (110); a first electrode layer (120) formed on the substrate; an electron transport layer (130) positioned on the lower electrode layer; a photoactive layer (140) positioned on the electron transport layer and including colloidal quantum dots; a hole transport layer (150) positioned on the photoactive layer; and a second electrode layer (160) positioned on the hole transport layer, wherein the second electrode may have an energy level difference of 0.8 (eV) or more from a valence band energy level of the hole transport layer.

[0043] First, the present invention includes a substrate (110).

[0044] At this time, the substrate may be an inorganic substrate or an organic substrate, and the inorganic substrate may include at least one of glass, quartz, Al2O3, SiC, Si, GaAs, and InP, and the organic substrate may include any one of Kepton foil, polyimide (PI), polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylenenaphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polycarbonate (PC), cellulose triacetate (CTA), and cellulose acetate propionate (CAP).

[0045] At this time, it is more preferable that the inorganic substrate and the organic substrate are made of a transparent material that transmits light, and when an organic substrate is introduced, the flexibility of the electrode can be increased.

[0046]

[0047] Additionally, the present invention may include a first electrode layer (120) formed on the substrate.

[0048] The first electrode layer (120) may include at least one of a conductive electrode and a transparent conductive electrode to improve light transmission, and any electrode material commonly used in the art may be used.

[0049] For example, the first electrode (120) may be formed of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (Indium Zinc Oxide), aluminum-doped zinc oxide (AZO), antimony-doped tin oxide (ATO), gallium-doped zinc oxide (GZO), indium zinc tin oxide (IZTO), graphene, carbon nanotube, poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS), titanium carbide, silver nanowire, aluminum (Al), silver (Ag), gold (Au), copper (Cu), It may include at least one of palladium (Pd), platinum (Pt), carbon nanotube (CNT), and graphene.

[0050] In addition, in the quantum dot thin film-based optical amplification sensor according to an embodiment of the present invention, at least one of the first electrode (110) and the second electrode (160) may be a transparent electrode.

[0051]

[0052] Additionally, the present invention may include an electron transport layer (130) formed on the first electrode layer (120).

[0053]

[0054] *The electron transport layer (130 ETL) may include at least one of a metal oxide, a metal nitride, and a metal oxynitride.

[0055] Preferably, the electron transport layer (130) may include an electron transport material in the form of nanoparticles or bulk, and the electron transport material in the form of nanoparticles or bulk may include at least one of an n-type metal oxide, metal nitride, or metal nitride semiconductor material such as ZnO, ZnON, or TiO2.

[0056] At this time, the electron transport material in the form of nanoparticles or bulk can play a role in blocking the movement of positive charges among photocharges and facilitating the movement of electrons by utilizing the band structure.

[0057] The thickness of the electron transport layer (130) may be 10 nm to 200 nm. If the thickness of the electron transport layer (130) is less than 10 nm, band junction for charge extraction does not occur well and hole movement is difficult to block, so there is a problem of increased dark current. If it exceeds 200 nm, electron movement is hindered by trap levels, etc., so there is a problem of reduced electron lifespan or reduced current output.

[0058]

[0059] Additionally, the present invention includes a photoactive layer (140) formed on an electron transport layer (130).

[0060] At this time, the photoactive layer may include quantum dots.

[0061] The above quantum dots are semiconductor materials with a crystal structure of several nanometers in size. Since these quantum dots are very small in size, they have a large surface area per unit volume and exhibit quantum confinement effects, so they have physicochemical properties different from the properties of the semiconductor material itself. In other words, quantum dots can have various properties controlled by controlling their physical size. Quantum dots absorb light from an excitation source, enter an energy excited state, and can emit energy corresponding to the energy band gap of the quantum dot.

[0062] Therefore, the colloidal quantum dot-based light amplification photovoltaic device according to an embodiment of the present invention has the effect of absorbing light, generating electron pairs in an energy excited state, and outputting them as photocurrent by including quantum dots in the photoactive layer (140).

[0063] The colloidal quantum dots described above possess the advantage of a tunable bandgap due to quantum size effects. These colloidal quantum dots can be synthesized in solution and processed into semiconductor nanocrystals. These colloidal quantum dots can capture a broadband solar spectrum beyond the Shockley-Queisser limit and are characterized by low manufacturing costs.

[0064] In addition, colloidal quantum dots are very promising for multiple exciton generation and can be used in tandem or multi-junction configurations, so their potential applications are very broad.

[0065] The colloidal quantum dot used in the present invention may include at least one selected from the group consisting of group III-V compounds, group II-VI compounds, and group IV-VI compounds.

[0066] For example, group III-V compounds may include InAs, InSb, and GaAs materials, group II-VI compounds may include CdS and CdSe materials, and group IV-VI compounds may include PbS and PbSe materials.

[0067] At this time, the size of the colloidal quantum dot may be 1 nm to 30 nm. If the size of the colloidal quantum dot is less than 1 nm, there is a problem of low conductivity and reduced photoexcitation effect, and if it exceeds 30 nm, there is a problem of low particle stability and difficulty in maintaining performance.

[0068] Therefore, colloidal quantum dot-based light amplification photovoltaic devices can selectively control the wavelength of light that can be absorbed by controlling the particle size because the quantum confinement effect varies.

[0069] At this time, the thickness of the photoactive layer (140) may be 40 nm to 500 nm.

[0070] If the thickness of the photoactive layer (140) is less than 40 nm, there is a problem that the amount of light absorption is too small and photoexcitation does not occur sufficiently, and if it exceeds 500 nm, there is a problem that the proportion of photocharges due to photoexcitation that have a lifespan that ends before moving to the electrode is too large and it is difficult to output as photocurrent.

[0071] Accordingly, in the colloidal quantum dot-based light amplification photoelectric device according to the embodiment of the present invention, when the thickness of the photoactive layer (140) is reduced, the movement of photoexcited photocharges is easy, but light cannot be sufficiently absorbed. When the thickness is increased, the light can be sufficiently absorbed, but internal defects increase and the movement distance of photocharges becomes longer, which may reduce the lifespan of the photoexciters.

[0072]

[0073] Additionally, the present invention may include a hole transport layer (150) formed on a photoactive layer.

[0074] The hole transport layer of the present invention may include an organic semiconductor material.

[0075] The reason for using an organic semiconductor material in the hole transport layer of the present invention is that it is a simple solution process, is a safe material with no toxicity, and can have its optical and electrical properties controlled as desired through molecular design.

[0076] The hole transport layer of the present invention is characterized by accumulating holes generated by light using an organic semiconductor material. The specific principle is as follows.

[0077] Typically, photoexcitons generated in the photoactive layer (140) are divided into electrons and holes, and the holes move through the hole transport layer (150). At this time, the hole transport layer (150) not only transports holes but also blocks electrons from flowing in from the electrode. Effectively blocking electrons can minimize current in the absence of light and increase photosensitivity.

[0078] However, the hole transport layer (150) of the colloidal quantum dot-based light amplification photoelectric device of the present invention uses an organic semiconductor material to accumulate holes generated by light in the organic semiconductor-based hole transport layer inside the device. The holes accumulated in the hole transport layer (150) locally apply a strong electric field to generate a quantum tunneling effect between the photoactive layer (140) and the second electrode (160). It is characterized by generating a light amplification effect in which charges are amplified compared to the incoming photons by the principle that quantum tunneling occurs in the presence of light.

[0079] At this time, the thickness of the hole transport layer (150) may be 5 nm to 50 μm.

[0080] If the thickness of the above hole transport layer (150) is less than 5 nm, there is a problem of high dark current due to quantum tunneling even in the absence of light, and if it exceeds 50 nm, there is a problem of no optical amplification because quantum tunneling does not occur even in the presence of light.

[0081] Accordingly, by using the principle of using a second electrode layer in which the energy level difference between the valence band energy level of the hole transport layer and the energy level of the hole transport layer is 0.8 eV or more, charges are accumulated in the hole transport layer (150), and an optical amplification effect through quantum tunneling can be derived.

[0082] Additionally, the present invention may include a second electrode layer (160) formed on a hole transport layer.

[0083] At this time, the second electrode layer is characterized by using an electrode having an energy level difference of 0.8 (eV) or more with respect to the valence band of the hole transport layer.

[0084] At this time, in the present invention, the valence band of the hole transport layer may be 5.0 (eV) to 5.5 (eV).

[0085] At this time, the energy level of the second electrode layer may be 2.9 (eV) to 4.3 (eV).

[0086] At this time, when not receiving light, the hole transport layer acts as an electron blocking layer to reduce noise generated when electrons pass through, and when receiving light, holes accumulate in the hole transport layer due to the difference in energy levels, a strong internal electric field is applied, and the energy barrier of the hole transport layer becomes thin, so that charges can be injected from the electrode through the quantum tunneling effect to amplify the signal.

[0087] At this time, the second electrode (160) may include at least one material from the group consisting of aluminum, calcium, and a conductive material having a difference in energy level between the valence band energy level of the hole transport layer and the energy level of the hole transport layer of 0.8 (eV) or more.

[0088] The thickness of the second electrode (160) may be 40 nm to 500 nm. If the thickness of the upper electrode (160) is less than 40 nm, there is a problem that the electrode is scratched and disappears upon contact, and if it exceeds 500 nm, there is a problem that the process is time- and financially inefficient.

[0089]

[0090] A high-sensitivity infrared photodetector according to another embodiment of the present invention is described.

[0091] A high-sensitivity infrared photodetector according to one embodiment of the present invention may include the colloidal quantum dot-based light amplification photoelectric element described above.

[0092] Quantum dot photodetectors (QPDs) play a pivotal role in selective near-infrared (NIR) detection, which requires high optical sensitivity for remote sensing, deep tissue penetration, and specific molecular absorption. These infrared region light (IR) photodetectors (PDs) have potential applications in color imaging, industrial inspection, optical communications, autonomous vehicles, and bioimaging. However, currently commercialized IR PDs are limited in their general applications due to their high manufacturing and operating costs.

[0093] As an alternative, quantum dots (QDs) are attracting attention as next-generation infrared region light (IR) photodetector (PD) materials due to their advantages such as ease of synthesis, solution processability, high photoelectric conversion efficiency, and tunability of absorption wavelength range.

[0094] Accordingly, the present invention can provide a high-sensitivity infrared photodetector including a photoamplification photoconductor including colloidal quantum dots.

[0095]

[0096] Hereinafter, the present invention will be described in more detail through manufacturing examples and experimental examples. These manufacturing examples and experimental examples are intended solely to illustrate the present invention, and the scope of the present invention is not limited by these manufacturing examples and experimental examples.

[0097]

[0098] Manufacturing Example: Fabrication of a Colloidal Quantum Dot-Based Light Amplifying Optoelectronic Device

[0099] First, a first electrode layer made of indium tin oxide (ITO) was formed on a substrate made of glass material using a physical vapor deposition (PVD) method.

[0100] Next, a spin coating method was performed on the first electrode layer to form an electron transport layer composed of ZnO material.

[0101] Next, a photoactive layer composed of InAs colloidal quantum dot material was formed by performing a spin coating method on the electron transport layer.

[0102]

[0103] *Next, a hole transport layer composed of PTB7 (Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]) was formed by performing a spin coating method on the photoactive layer.

[0104] Next, a second electrode layer made of aluminum was formed by performing thermal evaporation on the hole transport layer.

[0105]

[0106] Experimental Example 1: Experiment to Confirm the Quantum Efficiency of a Colloidal Quantum Dot-Based Light Amplifying Photovoltaic Device

[0107] Figure 2 is a graph showing the difference in quantum efficiency according to (a) a general diode structure and (b) an optical amplifier structure.

[0108] Referring to the above Figure 2, when compared to the graph of a general diode structure, the graph of the optical amplifier structure can be confirmed to have the effect of high quantum efficiency.

[0109]

[0110] Experimental Example 2: Experiment to Confirm Carrier Movement According to the Structure of a Colloidal Quantum Dot-Based Light Amplifying Photovoltaic Device

[0111] Figure 3 is a schematic diagram of carrier movement according to (a) a general diode structure and (b) an optical amplifier structure.

[0112] Referring to the above Figure 3, when compared with the carrier movement schematic diagram of a general diode structure, the carrier movement characteristics according to the structure of the optical amplifier element can be confirmed that when not receiving light, the hole transport layer can act as an electron blocking layer, and when receiving light, holes are accumulated in the hole transport layer due to the energy level difference, so that when a strong internal electric field is applied and the energy barrier of the hole transport layer becomes thin, charges are injected from the electrode through the quantum tunneling effect, and the effect of amplifying the signal can be confirmed.

[0113]

[0114] Experimental Example 3: Current-voltage curve data according to the structure of a colloidal quantum dot-based light amplification photovoltaic device.

[0115] Figure 4 shows current-voltage curve data according to (a) a general diode structure and (b) an optical amplifier structure.

[0116] Referring to the above Fig. 4, when compared with the current-voltage curve of a general diode structure, the current-voltage curve according to the optical amplifier structure shows a form in which the current density value is 0 when the voltage is 0 V, and the current value increases rapidly in reverse bias, so that the effect of charge injection by the quantum tunneling effect from the second electrode layer (160) can be confirmed.

[0117]

[0118] The foregoing description of the present invention is for illustrative purposes only, and those skilled in the art will readily appreciate that the present invention can be readily modified into other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. For example, each component described as a single entity may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined manner.

[0119] The scope of the present invention is indicated by the claims described below, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

[0120] <Explanation of symbols>

[0121] 100: Colloidal quantum dot-based light-amplifying photovoltaic device

[0122] 110: Substrate

[0123] 120: First electrode layer

[0124] 130: Electron transport layer

[0125] 140: Photoactive layer

[0126] 150: Hole transport layer

[0127] 160: Second electrode layer

Claims

1. Substrate; A first electrode layer formed on the above substrate; An electron transport layer positioned on the first electrode layer; A photoactive layer positioned on the electron transport layer, wherein the photoactive layer comprises colloidal quantum dots; A hole transport layer positioned on the photoactive layer, the hole transport layer including an organic semiconductor compound; and Including a second electrode layer positioned on the above hole transport layer, A colloidal quantum dot-based light amplification photovoltaic device, characterized in that the second electrode layer is composed of a material having an energy level difference of 0.8 (eV) or more with respect to the valence band energy level of the hole transport layer.

2. In paragraph 1, A colloidal quantum dot-based light amplifying photovoltaic device, characterized in that the first electrode layer comprises a transparent conductive electrode.

3. In paragraph 1, A colloidal quantum dot-based light amplifying photovoltaic device, characterized in that the electron transport layer comprises at least one of a metal oxide, a metal nitride, and a metal oxynitride.

4. In paragraph 1, A colloidal quantum dot-based light amplifying photovoltaic device, characterized in that the electron transport layer comprises an electron transport material in the form of nanoparticles or bulk.

5. In paragraph 1, A colloidal quantum dot-based light amplification photovoltaic device, characterized in that the colloidal quantum dot of the photoactive layer comprises at least one selected from the group consisting of group 3-5 (III-V) compounds, group 2-6 (II-VI) compounds, and group 4-6 (IV-VI) compounds.

6. In paragraph 1, A colloidal quantum dot-based light amplification photovoltaic device, characterized in that the hole transport layer comprises at least one selected from the group consisting of PTB7 (Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]), PTAA (Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine), and organic semiconductor compounds.

7. In paragraph 1, A colloidal quantum dot-based light amplification photovoltaic device, characterized in that the second electrode layer comprises at least one selected from the group consisting of aluminum, calcium, and conductive materials having a difference in energy level between the valence band energy level of the hole transport layer and the energy level of the hole transport layer of 0.8 (eV) or more.

8. A high-sensitivity infrared photodetector comprising the colloidal quantum dot-based light amplification photovoltaic device of claim 1.

9. In paragraph 8, The above high-detection infrared photodetector is a high-detection infrared photodetector characterized by having a quantum efficiency of 400% or more in the infrared region.

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