Substrate processing device and processing system

Abstract

In the present invention, a semiconductor manufacturing apparatus comprises: a carrier block for carrying in and out a carrier; an atmosphere module including a plurality of atmospheric processing devices; and a vacuum module that includes a plurality of vacuum processing devices and that is positioned directly above the atmosphere module. The semiconductor manufacturing apparatus further comprises: an atmospheric processing conveyance path for delivering a wafer to an atmospheric processing device; and a vacuum processing conveyance path for delivering the wafer to a vacuum processing device. The atmospheric processing conveyance path and the vacuum processing conveyance path are connected to the carrier block.

Description

Substrate processing apparatus and processing system

[0001] The present disclosure relates to a substrate processing apparatus.

[0002] Patent Document 1 discloses a substrate processing apparatus that performs photolithography processes such as applying a resist to a wafer to form a resist film and supplying a developer to develop the exposed resist film.

[0003] JP 2010-219434 A

[0004] The present disclosure provides a substrate processing apparatus and a processing system that can improve the efficiency of substrate processing.

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a load / unload block for loading and unloading a carrier that accommodates a plurality of substrates, an atmospheric processing group including a plurality of atmospheric processing devices, and a vacuum processing group including a plurality of vacuum processing devices and positioned directly above the atmospheric processing group. The substrate processing apparatus according to an aspect of the present disclosure further includes an atmospheric processing transport path for transferring substrates to the atmospheric processing devices and a vacuum processing transport path for transferring substrates to the vacuum processing devices, the atmospheric processing transport path and the vacuum processing transport path being connected to the load / unload block.

[0006] According to the present disclosure, the efficiency of substrate processing can be improved.

[0007] 1 is a schematic diagram of a processing system according to a first embodiment. FIG. 2 is a configuration diagram of the PFAS detoxification system shown in FIG. 1. FIG. 3 is a diagram explaining processing in a monomer concentrator. FIG. 4 is a diagram explaining a detoxification device. FIG. 5 is a diagram explaining mist generation processing in the detoxification device. FIG. 6 is a diagram explaining a circulating filtration mechanism according to a modified example. FIG. 7 is a diagram explaining a circulating filtration mechanism according to a modified example. FIG. 8 is a schematic diagram of a processing system according to a second embodiment. FIG. 9 is a configuration diagram of the semiconductor manufacturing device shown in FIG. 10. FIG. 10 is a diagram explaining an interface block. FIG. 11 is a diagram explaining an installation base. FIG. 11 is a diagram explaining a vacuum system module and an atmospheric system module. FIG. 12 is a diagram explaining each transport path. FIG. 13 is a diagram explaining switching of an exhaust line. FIG. 14 is a diagram explaining an exhaust line according to a modified example.

[0008] Hereinafter, the embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description will be omitted.

[0009] [First Embodiment] Fig. 1 is a schematic diagram of a processing system 1 according to a first embodiment. As shown in Fig. 1, the processing system 1 includes a PFAS detoxification system 10 (processing apparatus) and a semiconductor manufacturing apparatus 100 (substrate processing apparatus). In the processing system 1, the PFAS detoxification system 10 detoxifies PFAS discharged from the semiconductor manufacturing apparatus 100. Note that Fig. 1 shows a schematic configuration of the PFAS detoxification system 10, and some components (e.g., components related to TMAH (tetramethylammonium hydroxide) wastewater, which will be described later) are not shown. PFAS refers to per- and polyfluoroalkyl substances (PFAS), which are organic fluorine compounds.

[0010] PFAS is a compound containing at least one aliphatic molecule of -CF2- or -CF3, and also includes organic polymer compounds (polymers) such as Teflon. PFAS is contained, for example, in fire extinguishing foams, plating solutions, aircraft hydraulic fluids, water repellents, floor waxes, etc. PFAS is also contained, for example, in textiles, medical products, electronic circuit boards, automobiles, food packaging paper, stone, flooring, leather, etc. In semiconductor manufacturing processes, for example, non-polymer PFAS is used in photoresists. Furthermore, polymer PFAS is used in liquid-contacting components such as piping, valves, and pumps in semiconductor manufacturing equipment, as well as in anti-reflective coatings, etc.

[0011] PFAS is stable in nature and is difficult to decompose. Therefore, PFAS has a high persistence and a tendency to accumulate in living organisms, and is said to be highly harmful. The PFAS detoxification system 10 according to this embodiment is a system that detoxifies PFAS discharged from semiconductor manufacturing equipment 100, thereby preventing PFAS from being discharged to the outside. The PFAS detoxification system 10 functions as a treatment device that treats wastewater discharged from semiconductor manufacturing equipment 100.

[0012] As shown in FIG. 1 , the PFAS detoxification system 10 includes a concentrator 11, a sulfuric acid treatment tank 12, a cooler 13, and a detoxification device 14. While the present embodiment describes the PFAS detoxification system 10 as a group of devices, the PFAS detoxification system 10 may also be configured as a single device. The semiconductor manufacturing apparatus 100 includes a lithography apparatus 111, a cleaning apparatus 112, an etching apparatus 113, and a film deposition apparatus 114. Each component of the semiconductor manufacturing apparatus 100 discharges substances containing PFAS as it performs processing. The processing units that make up the PFAS detoxification system 10 may or may not be installed in the same space (location). For example, each processing unit may be installed inside the building where the lithography apparatus 111, cleaning apparatus 112, or etching apparatus 113 is installed, or may be installed outside the building or in an adjacent space. Each processing unit may be installed separately inside and outside the building. Furthermore, among the concentrator 11, sulfuric acid treatment tank 12, cooler 13, and detoxification apparatus 14, those that are not in use do not need to be installed all the time.

[0013] The lithography apparatus 111 includes a coating / developing apparatus and an exposure apparatus. The exposure apparatus performs an exposure process on a resist film. Specifically, it irradiates an exposure target portion of a resist film (photosensitive coating) with energy rays using a method such as immersion exposure. The coating / developing apparatus forms a resist film on the surface of a substrate before the exposure process using the exposure apparatus, and then develops the resist film after the exposure process. PFAS is contained in liquids or gases discharged from the lithography apparatus 111. For example, PFAS is contained in resist waste liquid, alkaline waste liquid (positive developer) from the development process, acid waste liquid from resist stripping, organic exhaust, thermal exhaust, solidified sublimate, etc. In addition, organic solvent waste liquid from negative development process can also be considered extremely diluted resist waste liquid, and contains PFAS. In this embodiment, PFAS may be treated the same as the resist waste liquid described above. In this embodiment, PFAS contained in resist waste liquid and PFAS contained in positive developer will be mainly described. Examples of PFAS contained in the resist waste liquid include a photo acid generator (PAG), a surfactant, or a polymer modified with F. The resist waste liquid discharged from the lithography apparatus 111 is introduced into the PFAS detoxification system 10.

[0014] The cleaning device 112 performs a cleaning process on the substrate. For example, the cleaning device 112 uses H ２ O ２ The cleaning device 112 uses SPM (Sulfuric Acid Hydrogen Peroxide Mixture), which is a mixture of sulfuric acid and sulfuric acid. ２ O ２ A mixed aqueous solution of HCl and H O (SC2: Standard Clean 2) was used to remove particles. ２ O ２A mixed aqueous solution (SC1) of sulfuric acid and ammonia is used. Hot concentrated sulfuric acid alone is also produced during the waste liquid treatment. The cleaning device 112 discharges SPM waste liquid containing PFAS. The SPM waste liquid and hot concentrated sulfuric acid discharged from the cleaning device 112 are introduced into the sulfuric acid treatment tank 12. The cleaning device 112 also discharges acid waste gas containing PFAS. The acid waste gas discharged from the cleaning device 112 is introduced into the detoxification device 14.

[0015] The etching device 113 performs an etching process to remove the oxide film and thin film according to the pattern of the formed resist film. The etching device 113 discharges exhaust gas containing PFAS. The exhaust gas discharged from the etching device 113 is introduced into the detoxification device 14.

[0016] The film forming apparatus 114 forms a wiring film and an insulating film on a substrate. The film forming apparatus 114 uses various process gases (PFAS-containing or non-containing gases) and discharges the exhaust gas. The exhaust gas discharged from the film forming apparatus 114 is introduced into the detoxification apparatus 14.

[0017] The concentrator 11 concentrates the PFAS-containing resist waste liquid discharged from the lithography tool 111 of the semiconductor manufacturing equipment 100. That is, the concentrator 11 concentrates the substrate processing waste liquid in the lithography tool 111 as a PFAS-containing waste liquid. As described below, the concentrator 11 includes a polymer concentrator 11a and a monomer concentrator 11b (see FIG. 2 ), but here they will be described as the concentrator 11 without distinguishing between them. The concentrator 11 uses, for example, an ultrafiltration membrane or a reverse osmosis membrane to concentrate the resist waste liquid and separate the solvent contained in the resist waste liquid (details will be described later). The concentrated resist waste liquid contains a polymer, so it has a high viscosity. The concentrated resist waste liquid is introduced into the sulfuric acid treatment tank 12. When the alkaline waste liquid discharged from the lithography tool 111 is concentrated by the concentrator 11, the alkaline waste liquid may be neutralized before being introduced into the reverse osmosis membrane.

[0018] The solvent separated from the resist waste liquid may be used as a recycled solvent for cup cleaning in the semiconductor manufacturing equipment 100, or may be collected by a solvent recovery company. In conventional cases, when solvent recovery companies attempt to refine recycled solvent from resist waste liquid by analyzing its components, there is a possibility that they may also recover waste liquid containing confidential materials of the resist manufacturer. In this regard, in the resist waste liquid passed through the concentrator 11 as in this embodiment, the solid components are contained in the concentrated liquid, thereby preventing confidential information from being leaked to the solvent recovery company.

[0019] The sulfuric acid treatment tank 12 decomposes and volatilizes the concentrated liquid concentrated by the concentrator 11 with the SPM waste liquid. That is, the sulfuric acid treatment tank 12 utilizes the SPM waste liquid from the cleaning device 112. In the SPM waste liquid, decomposition reactions such as oxidation and dehydration occur in the solvent and polymer, resulting in lower molecular weights (lower viscosity). At this time, the temperature of the SPM waste liquid increases due to an exothermic reaction (the temperature of the hot concentrated sulfuric acid in the SPM waste liquid increases). PFAS is not basically decomposed, but components such as PAG have low boiling points and are volatilized by the high-temperature SPM waste liquid (particularly due to the effect of the hot concentrated sulfuric acid contained in the SPM waste liquid). Conventionally, SPM waste liquid has been treated by adding catalase to prevent foaming, but in the sulfuric acid treatment tank 12, the SPM waste liquid is reacted with organic matter to produce H2O. ２ O ２ If all of these components are used up and degassed, downstream sulfuric acid waste liquid will not foam, making it easier to treat. It also reduces catalase levels. Because this reaction generates heat, for example, around 300°C, temperature difference power generation using the exhaust heat or steam generated from the circulating water used to cool the sulfuric acid treatment tank 12 may be used for power generation. The sulfuric acid waste liquid discharged from the sulfuric acid treatment tank 12 is recovered, for example, by a recycling company. This sulfuric acid waste liquid has a higher sulfuric acid purity than conventional waste liquids. It is desirable to treat the sulfuric acid treatment tank 12 in an inert nitrogen atmosphere to prevent accidental ignition. The SPM waste liquid may also be hot concentrated sulfuric acid waste liquid. In the case of hot concentrated sulfuric acid, decomposition reactions occur in the solvent and polymer, resulting in lower differentiation (lower viscosity). At this time, the temperature of the hot concentrated sulfuric acid increases due to an exothermic reaction, volatilizing PFAS, PAG, and the like.

[0020] When the concentrated resist waste solution is added to the SPM waste solution stored in the sulfuric acid treatment tank 12 and treated, H ２ O ２ As a result, the sulfuric acid treatment tank 12 is consumed, reducing the treatment capacity. After an appropriate amount of concentrated resist waste liquid is supplied, the sulfuric acid treatment tank 12 is placed on standby until the reaction settles down and gas generation ceases. Because a large amount of SPM waste liquid is produced from the cleaning device 112, it is necessary to treat the SPM waste liquid from the cleaning device 112 without delay. Therefore, the sulfuric acid treatment tank 12 may be composed of multiple treatment tanks. In this case, while one treatment tank is being treated, preparations such as the injection of liquid may be made in other treatment tanks. Furthermore, the liquid may be flowed downstream, such as through the first treatment tank, then the second treatment tank, and then the third treatment tank, depending on the progress of the reaction. If the resist waste liquid is a metal-containing resist, only the metal components precipitate without volatilization and are treated together with the sulfuric acid waste liquid in the same processes as those described above.

[0021] Since SPM waste liquid contains hydrogen peroxide, if it is disposed of as waste liquid, it may foam, putting a strain on the equipment, or the foaming gas may cause environmental damage. In this regard, the configuration according to this embodiment effectively utilizes the remaining hydrogen peroxide, and the foaming gas is also burned as fuel in the detoxification device 14, thereby reducing the burden on the equipment and the environment.

[0022] The cooler 13 liquefies and collects the PFAS-containing gas volatilized by the sulfuric acid treatment tank 12. The cooler 13 separates and collects the gas into a gaseous component, a low-molecular-weight gas, and a liquid component, a hydrocarbon (HC) extract. As shown in FIG. 2 , the gas from the sulfuric acid treatment tank 12 is cooled in the cooler 13, and the liquefied gas is collected as a HC (hydrocarbon) extract, while the non-condensed low-molecular-weight gas is also collected. The gas generated from the sulfuric acid treatment tank 12 is treated in a nitrogen atmosphere, and therefore is a mixed gas containing nitrogen. Since a mixed gas containing a large amount of nitrogen requires a large amount of processing in the subsequent detoxification device 14, the non-condensed low-molecular-weight gas in the cooler 13 may be separated into nitrogen and other components and concentrated using, for example, a nano-sub-ceramic filter.

[0023] A variety of organic gases and other gases are discharged from the sulfuric acid treatment tank 12 described above. PFAS such as PAG are also discharged as gases. While it is possible to directly introduce these gases into the detoxification device 14, transportability can be improved by first liquefying gases that become liquid at room temperature in the cooler 13. If the gases are transported without liquefaction, liquid pools may form in the piping, making control difficult. PFAS are contained in both the liquefied HC extract and the uncondensed low-molecular-weight gas. The HC extract and the low-molecular-weight gas are introduced into the detoxification device 14. To further improve gas transportability, all gases, including the low-molecular-weight gas, may be liquefied before being introduced into the detoxification device.

[0024] The detoxification device 14 detoxifies the substances treated by the cooler 13. The detoxification device 14 may be a combustion detoxification device that detoxifies the substances treated by the cooler 13 by combustion. The detoxification device 14 incinerates the HC extract and low-molecular-weight gases introduced from the cooler 13. Most of the HC extract is hydrocarbon, so it can be burned as fuel. Most of the low-molecular-weight gases are hydrocarbons with a carbon number of 10 or less, so they can also be burned as fuel. Conventionally, propane gas or city gas has been used as fuel in combustion detoxification devices, but since the HC extract, etc. is used as fuel as described above, the amount of propane gas, etc. can be reduced.

[0025] Furthermore, the detoxification device 14 may simultaneously combust and detoxify the exhaust gas introduced from the etching device 113, the exhaust gas introduced from the film-forming device 114, and the acid waste gas introduced from the cleaning device 112. These gases contain PFAS used in each device. By simultaneously combusting and detoxifying these gases, the amount of propane gas and other gases can be further reduced. During the combustion and detoxification, electricity may be generated by burning them using an internal combustion engine such as a gas turbine. Detoxified gases such as carbon dioxide may be recovered and used to synthesize organic substances such as formic acid and methanol. The detoxification device 14 may also be a subcritical treatment device that performs subcritical treatment on the material treated by the cooler 13, or a supercritical treatment device that performs supercritical treatment. The detoxified waste gas may also be processed into fluorine-ion-containing scrubber water and waste gas through a scrubber device (a device that washes the waste gas with water, neutralizes it with chemicals, or adsorbs it and releases it into the atmosphere). The scrubber water can be converted into calcium fluoride or fluorite by reacting it with calcium. Fluorite is the starting material for fluorine compounds, making it a resource that can be recycled.

[0026] Next, details of the PFAS detoxification system 10 shown in FIG. 1 will be described with reference to FIGS. 2 to 5. FIG. 2 is a configuration diagram of the PFAS detoxification system 10 shown in FIG. 1. FIG. 2 also illustrates components (such as components related to the TMAH waste liquid) that are not shown in FIG. 1. The PFAS detoxification system 10 further includes a waste liquid supply channel 15, a polymer filter 301 (first filter), a polymer concentrator 11a, and a monomer concentrator 11b. The PFAS detoxification system 10 also includes a circulation channel 16. The PFAS detoxification system 10 further includes a first filtrate flow channel 17a, a second filtrate flow channel 17b, a third filtrate flow channel 18, a fourth filtrate flow channel 19, a first reservoir 20xa, a second reservoir 20xb, and a third reservoir 20y. The PFAS detoxification system 10 further includes a bypass flow path 302. The PFAS detoxification system 10 further includes a first gas filter 22, a vacuum pump 23, and a distiller 24. The PFAS detoxification system 10 further includes a second gas filter 25. The PFAS detoxification system 10 further includes a waste liquid supply path 26, a concentrator 27, a circulation path 28, a developer flow path 29, a regenerated developer storage section 30, a developer treatment tank 31, a third gas filter 32, and a generator 33. The PFAS detoxification system 10 further includes a backflow liquid storage section 35. The PFAS detoxification system 10 further includes a discharge path 37. The PFAS detoxification system 10 further includes an SPM supply path 38.

[0027] Resist waste liquid containing PFAS discharged from the lithography apparatus 111 flows through the waste liquid supply path 15 and into a polymer filter 301 provided in the waste liquid supply path 15. The polymer filter 301 separates the resist waste liquid into a polymer concentrate (first solution) having a polymer (high molecular weight component) concentration equal to or greater than a predetermined concentration, and a monomer concentrate (second solution) having a monomer (low molecular weight component) concentration equal to or greater than a predetermined concentration but not equal to a predetermined concentration. The polymer concentrate may contain, for example, 20 to 60% by weight of polymer. The monomer concentrate may contain, for example, 2 to 30% by weight of monomer. The polymer filter 301 is a filter with a coarser mesh than the hollow fiber filter (filter 39, etc.) used to extract the filtrate (solvent), which will be described later. The polymer concentrate separated by the polymer filter 301 passes through the polymer concentrator 11a and is stored in the sulfuric acid treatment tank 12. The monomer concentrate separated by the polymer filter 301 is stored in the monomer concentrator 11b. In this manner, the monomer concentrator 11b is a storage unit that stores the monomer concentrate.

[0028] The circulation flow path 16 is a circulation flow path connected to the monomer concentrator 11b, and a filter 39 for removing polymer is provided midway along the flow path. The filter 39 is, for example, a hollow fiber filter. The provision of the filter 39 concentrates the monomer concentrate. The filtrate (solvent) that passes through the filter 39 flows through the first filtrate flow path 17a and is stored in the first reservoir 20xa. This filtrate is a low-concentration PFAS solution. The first reservoir 20xa is connected to the first filtrate flow path 17a and serves as a reservoir for storing the filtrate. The second filtrate flow path 17b is a flow path connecting the first reservoir 20xa and the second reservoir 20xb. The second filtrate flow path 17b is provided with a filter 40a. The filter 40a is, for example, an ion exchange resin filter. The provision of the filter 40a allows the filtrate that passes through the filter 40a to be a solution with a low PFAS content. The filtrate (solvent) that has passed through the filter 40a flows through the second filtrate flow path 17b and is stored in the second reservoir 20xb. The second reservoir 20xb is connected to the third filtrate flow path 18 and serves as a reservoir for storing the filtrate. The third filtrate flow path 18 is a flow path connecting the second reservoir 20xb and the third reservoir 20y. The third filtrate flow path 18 is provided with a filter 40b. The filter 40b is, for example, an ion exchange resin filter. By providing the filter 40b, the filtrate that has passed through the filter 40b can be made into a solution that contains almost no PFAS. The filtrate that has passed through the filter 40b flows through the third filtrate flow path 18 and is stored in the third reservoir 20y. This filtrate can be used as a regenerated solvent and flows to the outside from the fourth filtrate flow path 19 downstream of the third reservoir 20y.

[0029] The filtrate may be introduced (backflowed) from the outlet side of the polymer filter 301 via, for example, the third filtrate flow path 18 and the bypass flow path 302. This allows clogging of the polymer filter 301 with polymer components and the like to be eliminated. Such backflow of the filtrate may be achieved, for example, by gas pressure or a liquid delivery unit such as a pump. Because the polymer solution has a high concentration and viscosity, for example, a large amount of solvent is required to wash it away with a solvent. Furthermore, other methods require treatments such as UV irradiation, ozone oxidation, and plasma exposure. In this regard, the method of backflowing the filtrate allows for easy and appropriate cleaning of the polymer filter 301 without the need to prepare a separate solvent or perform UV irradiation or the like.

[0030] The components of the monomer concentrator 11b, circulation flow path 16, filters 39, 40a, 40b, first filtrate flow path 17a, first reservoir 20xa, second filtrate flow path 17b, second reservoir 20xb, and third filtrate flow path 18 constitute a low-molecular-weight component treatment section. The low-molecular-weight component treatment section increases the concentration of low-molecular-weight components such as PFAS in the monomer concentrate separated by the polymer filter 301. The components of the low-molecular-weight component treatment section, particularly the circulation flow path 16 and filter 39, function as a circulation filtration mechanism that circulates the monomer concentrate and filters out low-molecular-weight components. The components of the filters 40a, 40b, first filtrate flow path 17a, first reservoir 20xa, second filtrate flow path 17b, second reservoir 20xb, and third filtrate flow path 18 function as a purification mechanism that removes PFAS from the filtrate that has passed through the circulation filtration mechanism.

[0031] The components downstream of the waste liquid supply path 15, such as the polymer filter 301 and the low molecular weight component treatment section, may be provided separately for each type of solvent contained in the waste liquid.

[0032] Fig. 3 is a diagram illustrating the treatment in the monomer concentrator 11b. As shown in Fig. 3, the PFAS detoxification system 10 further includes a PFAS foam liquid collection chamber 311 (PFAS collection section). The PFAS foam liquid collection chamber 311 is configured to collect the PFAS foam liquid collected in the monomer concentrator 11b. The PFAS foam liquid collection chamber 311 has an inlet located downstream of the flow of the concentrated monomer liquid along the liquid surface in the monomer concentrator 11b.

[0033] In the monomer concentrator 11b, microbubbles are generated by air or nitrogen in the monomer concentrate from which the polymer has been removed. The microbubbles cause PFAS to collect at the interface, allowing a highly concentrated PFAS foam liquid to be recovered by scooping up the supernatant. As shown in FIG. 3 , a confluence point 15x for air or nitrogen is provided in the waste liquid supply path 15, allowing the air or nitrogen to flow into the monomer concentrator 11b along with the monomer concentrate. The inlet path 16a of the circulation path 16, which introduces the monomer concentrate into the filter 39, collects the monomer concentrate from near the bottom of the monomer concentrator 11b (a deep location away from the liquid surface). The outlet path 16b of the circulation path 16, which returns the monomer concentrator from the filter 39 to the monomer concentrator 11b, returns the monomer concentrate to near the liquid surface of the monomer concentrator 11b. The outlet path 16b is provided with a confluence point 16x for air or nitrogen to flow into the monomer concentrator 11b. In this way, by feeding air or nitrogen near the liquid surface in both the waste liquid supply path 15 and the discharge path 16b, microbubbles are generated near the liquid surface, allowing concentrated PFAS to be collected at the interface. The waste liquid supply path 15 and the discharge path 16b function as microbubble generators that generate microbubbles in the monomer concentrate in the monomer concentrator 11b. Furthermore, because the inlet of the PFAS foam liquid collection chamber 311 is located downstream of the flow of the monomer concentrate along the liquid surface in the monomer concentrator 11b, the highly concentrated PFAS foam liquid can be collected in the PFAS foam liquid collection chamber 311, just like scooping up the supernatant liquid at the interface.

[0034] Since the PFAS concentration decreases near the bottom of the monomer concentrator 11b, the PFAS concentration decreases in the monomer concentrate recovered through the inflow passage 16a and flowing into the filter 39. This increases the solvent recycling rate.

[0035] The PFAS foam may be discharged via the flow path 312 into the sulfuric acid treatment tank 12 storing SPM and burned there, or may be evaporated by heating before being discharged into the sulfuric acid treatment tank 12 and the gas incinerated. The PFAS foam may also be treated together with the components that solidify the PFAS component. If PFAS remains in the sulfuric acid treatment tank 12 without being vaporized, it may be mixed in with the residual sulfuric acid when it is disposed of as waste liquid and become a source of contamination. Therefore, the PFAS foam may be discharged directly to the detoxification device 14 (details will be described later). The flow path for the PFAS foam may be periodically switched, or the PFA foam may be discharged to the sulfuric acid treatment tank 12 side depending on the amount of SPM and the amount of polymer concentrate in the sulfuric acid treatment tank 12.

[0036] Returning to FIG. 2 , the polymer concentrate flows into the sulfuric acid treatment tank 12 via the polymer concentrator 11a. In the sulfuric acid treatment tank 12, the polymer concentrate is decomposed and volatilized by the SPM waste liquid. This causes decomposition reactions, such as oxidation and dehydration, resulting in decomposition into gases containing carbon monoxide, carbon dioxide, nitrogen, water vapor, hydrocarbon gases, and PFAS. The gases released in this process reach temperatures of 100°C or higher. The gases volatilized in the sulfuric acid treatment tank 12 are then separated by a first gas filter 22. The first gas filter 22 is a filter that separates the gases volatilized in the sulfuric acid treatment tank 12 into PFAS-rich gas and PFAS-removed gas. The first gas filter 22 is, for example, a pervaporation filter, but may also be a ceramic filter. The first gas filter 22 receives heat generated in the sulfuric acid treatment tank 12 and is heated to a temperature higher than that of the concentrated liquid before decomposition. The first gas filter 22 may be disposed in the same space as the sulfuric acid treatment tank 12, or may be connected to the sulfuric acid treatment tank 12 by a conductive member such as metal, so as to receive the heat generated in the sulfuric acid treatment tank 12. In this embodiment, the PFAS-rich gas refers to a gas in which the PFAS concentration is higher than that of the gas before it is affected by the predetermined action. Here, separation by the first gas filter 22 corresponds to the predetermined action. In this embodiment, the predetermined action is not limited to separation by the first gas filter 22, and when PFAS-rich gas is generated, the action that causes it to be generated can be said to be the predetermined action.

[0037] The first gas filter 22, which is a pervaporation filter, separates gases by utilizing the difference in momentum due to differences in molecular weight. That is, by reducing the pressure downstream of the first gas filter 22, for example, the first gas filter 22 allows gases with relatively small molecular weights (nitrogen, carbon monoxide, carbon dioxide, water vapor, etc.) to pass (flow downstream) while blocking gases with relatively large molecular weights (PFAS, hydrocarbons). This allows for the PFAS-rich gas to be largely separated from the PFAS-removed gas.

[0038] The vacuum pump 23 is a pump that reduces the pressure downstream of the first gas filter 22 and achieves the separation of gases by the first gas filter 22. The cooler 13 liquefies and collects the gas containing PFAS. The collected liquid and gas are stored in the distiller 24. The liquid PFAS and hydrocarbons, as well as the gaseous PFAS and hydrocarbons (and ozone, described below) are introduced from the distiller 24 into the detoxification device 14.

[0039] The PFAS detoxification system 10 takes in outside air and separates it into nitrogen and oxygen using the second gas filter 25. That is, the second gas filter 25 separates the outside air into a gas with a higher nitrogen concentration than air (hereinafter simply referred to as nitrogen) and a gas with a higher oxygen concentration than air (hereinafter simply referred to as oxygen). The second gas filter 25 then supplies the nitrogen to the sulfuric acid treatment tank 12, thereby preventing ignition in the sulfuric acid treatment tank 12. The second gas filter 25 also supplies oxygen to the detoxification device 14, thereby promoting combustion in the detoxification device 14. Note that the detoxification device 14 may be supplied with ozone generated from the oxygen described above. Such ozone may be supplied to the distiller 24 and then introduced into the detoxification device 14, or may be introduced directly into the detoxification device 14. Methods for generating ozone from oxygen include, for example, UV irradiation and electrical discharge.

[0040] In the PFAS detoxification system 10, a TMAH waste liquid, which is a positive developer, is introduced from, for example, a lithography tool 111. In the PFAS detoxification system 10, the TMAH waste liquid discharged from the lithography tool 111 of the semiconductor manufacturing equipment 100 is concentrated in a concentrator 27. In addition, a first concentrated liquid, which is a concentrated liquid of the positive developer concentrated by the concentrator 27, is decomposed and volatilized in a developer treatment tank 31.

[0041] The waste liquid supply path 26 supplies the TMAH waste liquid introduced from the lithography apparatus 111 to the concentrator 27. The waste liquid supply path 26 and the waste liquid supply path 15, which supplies the resist waste liquid to the concentrator 11, are provided separately. The waste liquid supply path 26 is provided with a filter 41 that removes polymers. The filter 41 is a developer waste liquid filter that removes polymers from the TMAH waste liquid. The circulation flow path 28 is a circulation flow path connected to the concentrator 27, and a filter 42 for increasing the concentration of PFAS is provided midway along the flow path. The developer (PFAS-free developer) that passes through the filter 42 passes through the developer flow path 29 and is stored in the recycled developer storage section 30. This developer can be used as recycled developer. The filter 42 is a positive developer waste liquid treatment section that separates the TMAH waste liquid into a PFAS-concentrated developer and a PFAS-free developer. The PFAS-free developer may be caused to flow backward from the secondary side of the filter 41. The backward flow liquid reservoir 35 is a developer filter cleaning liquid chamber that stores the liquid that has flowed backward and passed through the filter 41 in this manner.

[0042] The concentrated solution concentrated in the concentrator 27 is supplied to the developer treatment tank 31 via the concentrated solution flow path 45. The developer treatment tank 31 is provided in contact with the sulfuric acid treatment tank 12 described above. Specifically, the developer treatment tank 31 is provided so as to surround the sulfuric acid treatment tank 12 from below. This allows the developer treatment tank 31 to receive heat from the sulfuric acid treatment tank 12, which can decompose and volatilize the first concentrated solution. Note that the method for decomposing the first concentrated solution is not limited to heat; for example, the first concentrated solution may be decomposed by exposure to microorganisms. Furthermore, the first concentrated solution may be used as a cooling solvent for the SPM in the sulfuric acid treatment tank 12.

[0043] TMAH decomposed by heat (e.g., at approximately 140°C) in the developer treatment tank 31 is decomposed into trimethylamine and dimethyl ether. These gases can be used as fuel in the detoxification device 14. PFAS is not decomposed by heat but is released as a gas and burned in the detoxification device 14. The gas released from the developer treatment tank 31 contains nitrogen, water vapor, hydrocarbons, trimethylamine, dimethyl ether, PFAS, and the like. The third gas filter 32, for example, reduces the pressure downstream to allow gases with relatively small molecular weights (nitrogen, water vapor, etc.) to pass (flow downstream) while blocking gases with relatively large molecular weights (trimethylamine, dimethyl ether, PFAS, hydrocarbons). This allows for the PFAS-rich gas to be largely separated from the PFAS-removed gas. Nitrogen, water vapor, and the like are released outside the system. The released water vapor is converted back into water in the generator 33, allowing power generation using the pressure difference. The gas containing PFAS and the like sent to the detoxification device 14 may be compressed before being sent to the detoxification device 14 .

[0044] The detoxification device 14 may have a combustion chamber that mixes and burns the gas volatilized by the developer treatment tank 31 and the gas volatilized by the sulfuric acid treatment tank 12. As described above, the PFAS foam liquid may be introduced into the detoxification device 14 in the form of a mist (see FIGS. 4 and 5). In this case, as shown in FIGS. 4 and 5, the PFAS foam liquid is introduced into the detoxification device 14 together with an oxygen-free gas. The oxygen-free gas here may contain various gases generated in the PFAS detoxification system 10.

[0045] As shown in Fig. 5, in detail, the PFAS foam and the gas not containing oxygen are turned into mist and introduced into the combustion chamber 14a of the detoxification device 14. By turning the PFAS foam into mist, the PFAS foam can be burned all at once. ２ or H ２ The PFAS gas is burned to CO. The bond between C and F is broken, and C becomes CO. ２The F is exhausted as F ions (fluoride ions). Then, in the scrubber chamber 14b of the detoxification device 14, the F ions dissolve in water and are recovered as HF (hydrofluoric acid). The HF is then neutralized with, for example, sodium hydroxide and discharged as waste liquid.

[0046] As the reaction between the resist concentrate and the SPM waste liquid progresses in the sulfuric acid treatment tank 12, the hydrogen peroxide in the SPM is deactivated, significantly reducing its reactivity. At this time, the SPM becomes concentrated sulfuric acid, which can cause a dehydration reaction, but carbonization of the organic matter progresses, causing the liquid to turn yellow or brown. Therefore, for example, when the liquid turns yellow, the SPM waste liquid is discharged from the discharge flow path 37. At this time, carbonized matter is filtered out by a filter 43 provided in the discharge flow path 37. The discharged SPM waste liquid is free of hydrogen peroxide, and the purity of the sulfuric acid has been increased by filtering through the filter 43, so it can be used as recycled sulfuric acid.

[0047] When new SPM waste liquid is supplied to the sulfuric acid treatment tank 12, a portion of the SPM waste liquid can be introduced into the outlet side of the filter 43 to clean the filter 43 that traps the carbonized matter. That is, the SPM waste liquid may be caused to react with the carbonized matter trapped in the filter 43 by flowing the SPM waste liquid into a flow path connected to the outlet of the filter 43 within the SPM supply path 38 for supplying new SPM waste liquid to the sulfuric acid treatment tank 12. As a result, the carbonized matter trapped in the filter 43 becomes carbon dioxide, which is discharged, and the filter 43 is cleaned.

[0048] Next, the effects of the PFAS detoxification system 10 according to this embodiment will be described.

[0049] The PFAS detoxification system 10 according to this embodiment is a treatment device for treating wastewater discharged from a semiconductor manufacturing apparatus 100, and includes a polymer filter 301 and a low-molecular-weight component treatment section. The polymer filter 301 is a filter that separates resist wastewater into a polymer concentrate having a polymer concentration equal to or greater than a predetermined concentration and a monomer concentrate having a monomer concentration equal to or greater than a predetermined concentration but not equal to a predetermined concentration. The low-molecular-weight component treatment section includes a monomer concentrator 11b, a circulation flow path 16, filters 39, 40a, 40b, a first filtrate flow path 17a, a first reservoir 20xa, a second filtrate flow path 17b, a second reservoir 20xb, a third filtrate flow path 18, and the like. The low-molecular-weight component treatment section increases the concentration of PFAS, a low-molecular-weight component, in the monomer concentrate separated by the polymer filter 301.

[0050] In this way, after the polymer and monomer are first separated by the polymer filter 301, a process for increasing the PFAS concentration in the monomer concentrate or the like (i.e., a process for removing PFAS) is performed. This allows the processing of the components to be removed and detoxified to be carried out more smoothly. As described above, the PFAS detoxification system 10 according to this embodiment allows the removal or detoxification of wastes related to semiconductor manufacturing to be carried out smoothly.

[0051] The low molecular weight component treatment section may have a circulation filtration mechanism that circulates the monomer concentrate and filters out low molecular weight components, and a purification mechanism that removes PFAS from the filtrate that has passed through the circulation filtration mechanism. With this configuration, PFAS can be efficiently removed, and the removal or detoxification of waste products related to semiconductor manufacturing can be more smoothly carried out.

[0052] The polymer filter 301 and the low molecular weight component treatment section may be provided separately for each type of solvent contained in the waste liquid, thereby enabling appropriate removal of PFAS from various solvents.

[0053] The PFAS detoxification system 10 may further include a filter 42 that separates the TMAH waste liquid into a PFAS-concentrated developer and a PFAS-free developer, and a filter 41 that removes polymers from the TMAH waste liquid. The PFAS detoxification system 10 may also include a backflow liquid storage unit 35 that stores the liquid that has passed through the filter 41 by backflowing the PFAS-free developer from the secondary side. With this configuration, PFAS can be appropriately removed from the TMAH waste liquid as well, and the filter 41 can be appropriately cleaned with the backflow liquid.

[0054] The molecular component treatment section may further include a monomer concentrator 11 b for storing the monomer concentrate, and a PFAS foam liquid collection chamber 311 having an inlet located downstream of the flow of the monomer concentrate along the liquid surface of the monomer concentrator 11 b. With this configuration, PFAS collected along the flow of the monomer concentrate can be appropriately recovered.

[0055] The low molecular weight component treatment section may further include a microbubble generator that generates microbubbles in the monomer concentrate in the monomer concentrator 11 b. With this configuration, the PFAS concentrated by the generated microbubbles can be collected at the interface, and the PFAS can be appropriately recovered in the PFAS foam liquid collection chamber 311.

[0056] Although the present embodiment has been described above, the present disclosure is not limited to the above. For example, although the circulation filtration mechanism has been described as being one filter 39 provided in the circulation flow path 16, the circulation filtration mechanism may include a plurality of (four, for example) filters 39 a, 39 b, 39 c, and 39 d (second filters) and a passage order switching mechanism that switches the serial passage order of the monomer concentrate through the plurality of filters 39 a, 39 b, 39 c, and 39 d.

[0057] 6 to 8 are diagrams illustrating a circulation filtration mechanism according to a modified example. As shown in FIG. 6, a plurality of filters 39a, 39b, 39c, and 39d are provided in the circulation flow path 16, which is a flow path connected to the monomer concentrator 11b, and are connected in series with one another. If the monomer concentrate always flows through the filter 39a, the filter 39b, the filter 39c, and the filter 39d in this order, the filter 39a will be the most contaminated. The above-mentioned passage order switching mechanism is employed as a means for uniformly distributing the contamination of the filters.

[0058] In Figure 7, filter 39a is indicated by "A", filter 39b by "B", filter 39c by "C", and filter 39d by "D". Also, the flow paths and valves between each filter are shown schematically. Here, an example will be described in which the opening and closing of the valves is controlled to switch the serial passing order of the monomer concentrate through each filter. Therefore, each valve corresponds to the passing order switching mechanism described above. While the figure shows four filters in series, the present invention is not limited to this, and two or more filters may be connected in series.

[0059] In the example shown in FIG. 7( a), the valves are controlled so that the monomer concentrate passes through in the order of "A → B → C → D." That is, a valve 601 in the flow path toward the "A" direction is opened so that the monomer concentrate flows through the circulation flow path 16 in the "A" direction. Note that a valve 602 in the flow path toward the "B" direction, a valve 603 in the flow path toward the "C" direction, and a valve 604 in the flow path toward the "D" direction are all closed so that the monomer concentrate flowing through the circulation flow path 16 does not initially flow in the "B," "C," or "D" directions. Next, a valve 605 in the flow path between "A" and "B" is opened so that the monomer concentrate flows from "A" to "B." Note that a valve 606 in the flow paths between "A" and "C" and between "A" and "D" is closed. Next, a valve 607 in the flow path between "B" and "C" is opened so that the monomer concentrate flows from "B" to "C." Note that a valve 608 in the flow path between "B" and "D" is closed. Subsequently, a valve 609 in the flow path between "C" and "D" and a valve 610 in the flow path between "D" and the filtrate reservoir are opened so that the monomer concentrate flows from "C" to "D" and then from "D" to the filtrate reservoir.

[0060] 7(b), the valves are controlled so that the monomer concentrate passes through in the order of "B → C → D → A." That is, valve 602 is opened so that the monomer concentrate flows through the circulation flow path 16 in the "B" direction. Note that valve 601 in the "A" direction flow path, valve 603 in the "C" direction flow path, and valve 604 in the "D" direction flow path are all closed so that the monomer concentrate flowing through the circulation flow path 16 does not initially flow in the "A," "C," or "D" directions. Next, valve 607 in the flow path between "B" and "C" is opened so that the monomer concentrate flows from "B" to "C." Note that valve 605 in the flow path between "B" and "A" and valve 608 in the flow path between "B" and "D" are closed. Next, valve 609 in the flow path between "C" and "D" is opened so that the monomer concentrate flows from "C" to "D." Next, valve 611 in the flow path between "D" and "A" and valve 606 in the flow path between "A" and the filtrate reservoir are opened so that the monomer concentrate flows from "D" in the direction of "A" and then from "A" in the direction of the filtrate reservoir.

[0061] Before replacing the filter, for example, filtrate (thinner) may be reversed to remove clogging (impurities) from the filter. In this case, cleaning of one of the multiple filters may be intensified. Such filter cleaning may be performed sequentially after a certain amount of processing. In the example shown in FIG. 7( c), for the purpose of cleaning "A" (filter 39a), only the valve 606 in the flow path between the filtrate reservoir and "A" is open so that the filtrate flows in the "A" direction. Furthermore, the valve 601 is closed so that the filtrate flows from "A" to the drainage path 650.

[0062] Instead of the above-described valves, the passing order may be switched by a three-way valve. In Fig. 8, filter 39a is indicated by "A", filter 39b by "B", filter 39c by "C", and filter 39d by "D". The flow paths between the filters and the three-way valves are also shown schematically. Here, an example will be described in which the serial passing order of the monomer concentrate through each filter is switched by controlling the three-way valve. Therefore, each three-way valve corresponds to the passing order switching mechanism described above.

[0063] In the example shown in FIG. 8( a), the three-way valves are controlled so that the monomer concentrate passes through in the order of "A → B → C → D." That is, the three-way valve 701 in the flow path toward the "A" direction is controlled so that the monomer concentrate flowing through the circulation flow path 16 flows in the "A" direction. Note that the three-way valve 702 in the flow path toward the "B" direction, the three-way valve 703 in the flow path toward the "C" direction, and the three-way valve 704 in the flow path toward the "D" direction are controlled so that the monomer concentrate flowing through the circulation flow path 16 does not initially flow in the directions "B," "C," or "D." Next, the three-way valve 702 in the flow path between "A" and "B" is controlled so that the monomer concentrate flows from "A" in the "B" direction. Note that the valves 706 in the flow paths between "A" and "C" and between "A" and "D" are closed so as to prevent the monomer concentrate from flowing in the directions "C" and "D." Next, a three-way valve 703 in the flow path between "B" and "C" is controlled so that the monomer concentrate flows in the direction from "B" to "C". Note that a valve 708 in the flow path between "B" and "D" is closed. Next, a three-way valve 704 in the flow path between "C" and "D" is controlled so that the monomer concentrate flows from "C" to "D" and then flows from "D" to the filtrate reservoir, and a valve 710 in the flow path between "D" and the filtrate reservoir is opened.

[0064] 8(b), the valves are controlled so that the monomer concentrate passes through in the order of "B → C → D → A." That is, the three-way valve 702 of the flow path toward the "B" direction is controlled so that the monomer concentrate flowing through the circulation flow path 16 flows in the "B" direction. The three-way valve 701 of the flow path toward the "A" direction, the three-way valve 703 of the flow path toward the "C" direction, and the three-way valve 704 of the flow path toward the "D" direction are controlled so that the monomer concentrate flowing through the circulation flow path 16 does not initially flow in the "A," "C," or "D" directions. Next, the three-way valve 703 of the flow path between "B" and "C" is controlled so that the monomer concentrate flows from "B" to "C." The valve 708 of the flow path between "B" and "D" is closed. Next, the three-way valve 704 of the flow path between "C" and "D" is controlled so that the monomer concentrate flows from "C" to "D." Next, the three-way valve 701 in the flow path between "D" and "A" is controlled so that the monomer concentrate flows from "D" in the direction of "A" and then from "A" in the direction of the filtrate reservoir, and the valve 706 in the flow path between "A" and the filtrate reservoir is opened.

[0065] Before replacing the filter, for example, filtrate (thinner) may be reversed to remove clogging (impurities) from the filter. In this case, cleaning of one of the multiple filters may be intensified. Such filter cleaning may be performed sequentially after a certain amount of processing. In the example shown in FIG. 8( c), for the purpose of cleaning "A" (filter 39a), only the valve 706 in the flow path between the filtrate reservoir and "A" is open so that the filtrate flows in the "A" direction. In addition, the three-way valve 701 is controlled so that the filtrate flows from "A" to the drain path 750.

[0066] As described above, the circulation filtration mechanism has a plurality of filters, and the order in which the concentrated monomer liquid passes through each filter is switched, thereby making it possible to prevent only some of the filters from becoming dirty.

[0067] Second Embodiment Next, a second embodiment of the present disclosure will be described. In the description of the second embodiment, the description that overlaps with the first embodiment will be omitted, and differences from the first embodiment will be mainly described.

[0068] In the above-described first embodiment, the PFAS detoxification system 10 has been mainly described as part of the processing system 1. In this embodiment, a detailed description will be given of an example of the configuration of a semiconductor manufacturing apparatus 100 (substrate processing apparatus) included in the processing system 1. Note that the semiconductor manufacturing apparatus 100 described below does not necessarily have to be configured to be used in combination with the PFAS detoxification system 10.

[0069] 9 is a schematic diagram of a processing system 1 according to the second embodiment. The processing system 1 includes a semiconductor manufacturing apparatus 100. As described above, the waste liquid and exhaust gas discharged from the semiconductor manufacturing apparatus 100 are treated in the PFAS detoxification system 10. The semiconductor manufacturing apparatus 100 operates by receiving power and other supplies from the power generation and storage device 3 and each module utility device 2.

[0070] Semiconductor manufacturing apparatus 100 is a system that forms a photosensitive coating on a substrate, exposes the photosensitive coating, and develops the photosensitive coating. The substrate to be processed is a semiconductor wafer. Semiconductor manufacturing apparatus 100 is sized to fit into, for example, a clean room, and if the clean room is sufficiently tall, it may be configured as a high-rise structure, for example, two stories high, making full use of the height of the clean room.

[0071] 9 and 10 , semiconductor manufacturing apparatus 100 includes a processing block 800, an exposure apparatus 801, an interface block 802 (relay block), and a carrier block 803 (loading / unloading block). In semiconductor manufacturing apparatus 100, for example, exposure apparatus 801 is provided at an end, and interface block 802, processing block 800, and carrier block 803 are provided in this order from the side closest to exposure apparatus 801.

[0072] The exposure tool 801 performs an exposure process on a resist film (photosensitive coating) applied to a wafer. Specifically, the exposure tool 801 irradiates an exposure target portion of the resist film with energy rays using a method such as EUV or immersion exposure. Alternatively, a semiconductor manufacturing device other than an exposure tool may be connected instead of the exposure tool 801. The other semiconductor manufacturing device may be, for example, a device that performs processes such as film formation or cleaning, and the processing method may be a processing method for a single substrate or a batch processing method for processing multiple substrates at a time.

[0073] The carrier block 803 loads wafers into and unloads wafers from the processing block 800. The carrier block 803 can support carriers that accommodate multiple wafers, and loads and unloads the wafers described above by loading and unloading the carriers. The carrier block 803 is provided with multiple carrier mounting stages (not shown) and a wafer transport device (not shown).

[0074] The interface block 802 is connected to the processing block 800 and transfers wafers between it and the exposure tool 801. FIG. 11 is a diagram illustrating the interface block 802. FIG. 11( a) shows a plan view of the interface block 802, FIG. 11( b) shows a front view of the interface block 802, and FIG. 11( c) shows a side view of the interface block 802. As shown in FIG. 11( c), the interface block 802 incorporates transfer devices 802x and 802y including transfer arms and is connected to the exposure tool 801. The interface block 802 also has load locks 802a and 802b that function as vacuum environment switching chambers. The load locks 802a and 802b are configured to be removable so that wafers can be transferred in a vacuum environment. The interface block 802 is connected to an atmospheric processing transfer path 821, a vacuum processing transfer path 822, and a bypass transfer path 823, which will be described later.

[0075] 10, the processing block 800 includes an atmospheric module 850 (atmospheric processing group), a vacuum module 860 (vacuum processing group), and a transfer path 804. The processing block 800 will be described in detail below with reference to FIGS. 12 to 15 in addition to FIG. 10.

[0076] The atmospheric module 850 is an atmospheric processing group including a plurality of atmospheric processing devices. The vacuum module 860 is a vacuum processing group including a plurality of vacuum processing devices and is located directly above the atmospheric module 850. The vacuum module 860 is located directly above the atmospheric module 850 via mounting bases 811 and 812.

[0077] The mounting pedestals 811 and 812 are arranged to cover the atmospheric module 850 and support the vacuum module 860. As shown in FIG. 12 , the mounting pedestal 811 has a pair of legs 811 a and a support portion 811 b bridged between the pair of legs 811 a and 811 a. The mounting pedestal 812 has a pair of legs 812 a and a support portion 812 b bridged between the pair of legs 812 a and 812 a. The mounting pedestals 811 and 812 may have the same configuration, for example. The mounting pedestal 811 may cover, for example, half of the atmospheric processing equipment in the atmospheric module 850 that is closer to the carrier block 803. The mounting pedestal 812 may cover, for example, half of the atmospheric processing equipment in the atmospheric module 850 that is closer to the interface block 802. The mounting bases 811 and 812 need only be able to support the vacuum system module 860 , and do not necessarily have to cover the entire area of ​​the upper surface of the atmospheric system module 850 .

[0078] 13(a) is a schematic plan view of the vacuum system module 860, and FIG. 13(b) is a schematic plan view of the atmospheric system module 850. In the example shown in FIG. 13(a), the vacuum system module 860 is configured to include a plurality of etching apparatuses 113 and a plurality of film formation apparatuses 114. By lowering the heights of these etching apparatuses 113 and film formation apparatuses 114, it is possible to arrange the components of the atmospheric system module 850, which will be described later, in the gaps below. The vacuum system module 860 may also include a gas-based resist film formation apparatus and a developing apparatus.

[0079] 13B, the atmospheric module 850 is configured to include a plurality of coating devices 851, a plurality of developing devices 852, a plurality of heat treatment devices 853, and a plurality of cleaning devices 112. Note that the types and numbers of devices included in each module are not limited to those described above.

[0080] Each component of each module described above can be removed and inserted like a drawer in a dresser for maintenance and replacement. The power required for each component of each module may be supplied via an auto-coupler, for example. This allows each component of each module to be safely removed and inserted.

[0081] 14 is a diagram illustrating each transfer path 804. The semiconductor manufacturing apparatus 100 includes, as the transfer paths 804, an atmospheric processing transfer path 821, a vacuum processing transfer path 822, and a bypass transfer path 823.

[0082] The atmospheric processing transfer path 821 is a transfer path for transferring wafers to and from each of the above-mentioned components of the atmospheric module 850. The atmospheric processing transfer path 821 extends between the carrier block 803 and the interface block 802 so as to be connected to both the carrier block 803 and the interface block 802.

[0083] The vacuum processing transfer path 822 is a transfer path that transfers wafers to and from each of the above-mentioned components of the vacuum system module 860. The vacuum processing transfer path 822 extends between the carrier block 803 and the interface block 802 so as to be connected to both the carrier block 803 and the interface block 802. The vacuum processing transfer path 822 extends at a height corresponding to the vacuum system module 860, which is above the atmospheric system module 850, and extends above the atmospheric processing transfer path 821.

[0084] The bypass transfer path 823 is a transfer path above the vacuum processing transfer path 822 that transfers wafers between the carrier block 803 and the interface block 802. By using the bypass transfer path 823, wafers can be transferred more quickly (in one leap).

[0085] Next, an example of exhaust line maintenance will be described, taking advantage of the unique features of the unitized configuration of the atmospheric system module 850 and the vacuum system module 860. Figures 15(a) and 15(b) are diagrams for explaining the switching of the exhaust line.

[0086] 15A, for example, in a film forming apparatus 114 of a vacuum system module 860, a chamber 114a is connected to a vacuum exhaust line 842 via a turbo molecular pump 114b. The vacuum exhaust line 842 is the vacuum exhaust line of the film forming apparatus 114, which is a vacuum system processing apparatus. Also, for example, an atmospheric exhaust line 841 is assumed to extend from a plurality of heat treatment apparatuses 853 of an atmospheric system module 850. Now, the vacuum exhaust line 842 and the atmospheric exhaust line 841 are assumed to extend parallel to and close to each other.

[0087] In this case, as shown in FIG. 15B, for example, a part of the exhaust line 841a extending from the heat treatment device 853 can be switched and connected to merge with the reduced pressure exhaust line 842. In this case, sublimates accumulated in the piping of the heat treatment device 853 can be exhausted by the vacuum flowing through the reduced pressure exhaust line 842, and the sublimates can be appropriately released. Such exhaust switching may be performed when semiconductors are not being manufactured or when maintenance is being performed. In such a configuration, the exhaust line 841a is a reduced pressure exhaust switching unit that allows the interior of the atmospheric treatment device to be reduced in pressure.

[0088] Generally, the decompression exhaust line and the atmospheric exhaust line are sometimes heated under control to prevent clogging with deposits. In this case, the total amount of energy can be reduced by heating them simultaneously rather than individually. That is, the total amount of energy can be reduced by simultaneously heating the above-mentioned decompression exhaust line 842 and the atmospheric exhaust line 841. In this case, the heat can be supplied by, for example, exhaust heat energy from the detoxification device 14, heat energy from the cleaning device 112, or energy (electricity) generated within the device.

[0089] Next, the effects of the semiconductor manufacturing apparatus 100 according to this embodiment will be described.

[0090] Semiconductor manufacturing apparatus 100 includes a carrier block 803 for loading and unloading carriers, an atmospheric module 850 including a plurality of atmospheric processing devices, and a vacuum module 860 including a plurality of vacuum processing devices and positioned directly above atmospheric module 850. Semiconductor manufacturing apparatus 100 further includes an atmospheric processing transfer path 821 for transferring wafers to the atmospheric processing devices, and a vacuum processing transfer path 822 for transferring wafers to the vacuum processing devices. The atmospheric processing transfer path 821 and the vacuum processing transfer path 822 are connected to carrier block 803.

[0091] In the semiconductor manufacturing apparatus 100 according to this embodiment, the atmospheric system module 850 and the vacuum system module 860 are located one above the other, which allows for the consolidation of exhaust lines, utility supply lines, and the like. Furthermore, since the two modules are located one above the other and each has its own dedicated transport path, a decrease in transport efficiency is also suppressed. The semiconductor manufacturing apparatus 100 described above can improve the efficiency of substrate processing. Furthermore, since the vacuum system module 860 is located at the top, maintenance of the vacuum processing equipment can be performed from multiple angles.

[0092] The semiconductor manufacturing apparatus 100 may further include mounting bases 811, 812 that are arranged to cover the atmospheric module 850 and support the vacuum module 860. This configuration makes it possible to easily and appropriately realize a configuration in which the two modules are positioned one above the other. Furthermore, the presence of the mounting bases 811, 812 reduces the load on the atmospheric module 850.

[0093] The semiconductor manufacturing apparatus 100 may further include an interface block 802 and a bypass transfer path 823 that transfers wafers between the carrier block 803 and the interface block 802 above the vacuum system module 860. With this configuration, wafers can be transferred more quickly using the bypass transfer path 823, further improving the efficiency of substrate processing.

[0094] The semiconductor manufacturing apparatus 100 may further include a pressure reduction / exhaust switching unit that connects a pressure reduction / exhaust line 842 of the vacuum-system processing apparatus with an atmospheric exhaust line 841 of the atmospheric processing apparatus and that enables the interior of the atmospheric processing apparatus to be depressurized via the atmospheric exhaust line 841. With this configuration, the sublimates accumulated in the atmospheric exhaust line 841 can be exhausted by the vacuum that flows through the pressure reduction / exhaust line 842, and the sublimates can be appropriately released.

[0095] Although the present disclosure has been described above with reference to this embodiment, the present disclosure is not limited thereto. For example, the filtrate may be reused after distillation, or may be used to clean components of the processing unit (e.g., cleaning a processing cup) without distillation. Furthermore, for example, the atmospheric module 850 may be configured to control the temperature by exhaust or temperature-controlled water in the vacuum module 860. FIG. 16 is a diagram illustrating an exhaust line according to this modification. Assume that in the vacuum module, the decompression exhaust line 842 of the film forming apparatus 114, which is a vacuum processing apparatus, functions as a heat exhaust line. Assume also that a heat conductive member 901 capable of conducting heat is provided, connected to the heat processing apparatus 853, which is an atmospheric processing apparatus. In this case, a heat conduction mechanism 902 is provided to connect the decompression exhaust line 842, which is a heat exhaust line, to the heat conductive member 901 and transfer heat to the heat processing apparatus 853. By providing this heat conduction mechanism 902, the temperature in the atmospheric module can be appropriately controlled using the exhaust heat from the vacuum module. The heat conduction mechanism 902 may be constantly connected or may be capable of switching its connection state based on a signal from a control unit (not shown). The decompression exhaust line 842 may be replaced with a pipe for flowing temperature-controlled water. In this case, for example, preliminary temperature control of the heat treatment device 853 may be performed, and temperature-controlled water may be used up to about 60° C., and the water may be further heated to the target temperature by electric power.

[0096] A configuration with a vacuum module on the upper level and an atmospheric module on the lower level offers the following advantages over a non-unitized configuration: - Small footprint: By stacking the vacuum and atmospheric systems, which were previously installed as separate devices, a smaller footprint is achieved. - Q-time control (interlayer process optimization): When multiple tools are installed independently, substrates are transported between them using an OHT. In contrast, the configuration of this embodiment combines the vacuum and atmospheric systems into a single inline tool that shares a L / P, allowing for faster transfer than OHT transport, i.e., shorter and more stable inter-process transitions. It also offers the advantage of being a total solution for pattern control. While optimization is typically performed for each individual tool, the interconnected tools in the configuration of this embodiment make it easier to comprehensively manage their processing conditions, making it easier to provide optimal processing conditions and results as a series of integrated processes. Energy conservation and waste control: Because the vacuum and atmospheric modules are stacked vertically, energy savings can be achieved by utilizing the configuration of one of the multiple pieces of equipment described above to control and adjust the environment of the other. Regarding waste control, the vertical stacking of the vacuum and atmospheric modules facilitates the consolidation of waste exhaust systems. The centralization of processing equipment facilitates the installation of compact systems. Furthermore, a single waste treatment system can manage the waste volume and discharge treatment status for multiple substrate processing steps in the vacuum and atmospheric systems. Flexible transport control (facilitating multiple transfers to the same module; flexible transfer between upper and lower layers), flexible module layout (COT only, cleaning only, etching only, etc. possible). Substrates can be transported separately to the vacuum and standby systems, and multiple transfers in the same module are possible by moving between the upper and lower layers. If the upper and lower layers are connected on both the CSB side and the opposite side, a transfer route that circulates between the upper and lower layers can reduce substrate congestion and ensure smooth processing.Furthermore, the vacuum layer and the atmospheric layer do not necessarily have to be equipped with multiple types of processing equipment; only one type of equipment may be installed, allowing for a high degree of freedom in equipment layout. Other Advantages: In semiconductor production, there are cases where the same product is mass-produced, and cases where a wide variety of products are produced in small quantities. In the case of a configuration like this embodiment, since it includes various processing modules, it is possible to select and execute the combination of modules to be used depending on the product type, making it advantageous for small-lot, wide-variety production. Even in the case of mass production, parallel processing may be performed using multiple types of equipment, or even multiple units of the same equipment, and stable products cannot be produced unless consideration is given to differences between the equipment. However, the configuration of this embodiment stabilizes the process within a small, closed combination, allowing for efficient production.

[0097] Finally, various exemplary embodiments included in the present disclosure are described below in [E1] to [E14].

[0098] [E1] A processing device for treating waste liquid discharged from a semiconductor manufacturing device, comprising: a first filter for separating the waste liquid into a first solution having a predetermined concentration or more of high molecular weight components and a second solution having a predetermined concentration or more of low molecular weight components but not having a predetermined concentration or more of high molecular weight components; and a low molecular weight component processing unit for processing the second solution separated by the first filter to increase the concentration of the low molecular weight components.

[0099] [E2] The treatment device according to [E1], wherein the low molecular weight component treatment section has a circulation filtration mechanism that circulates the second solution to filter the low molecular weight components, and a purification mechanism that removes PFAS from the filtrate that has passed through the circulation filtration mechanism.

[0100] [E3] The treatment device according to [E2], wherein the circulation filtration mechanism has a plurality of second filters and a passing order switching mechanism that switches the serial passing order of the second solution through the plurality of second filters.

[0101] [E4] The treatment device according to any one of [E1] to [E3], wherein the first filter and the low molecular weight component treatment section are provided separately for each type of solvent contained in the waste liquid.

[0102] [E5] The treatment device according to any one of [E1] to [E4], further comprising: a positive developer waste treatment unit that separates TMAH waste liquid into a PFAS-concentrated developer and a PFAS-free developer; a developer waste filter that removes polymers from the TMAH waste liquid; and a developer filter cleaning liquid chamber that stores the PFAS-free developer that has passed through the developer waste filter by causing it to flow backward from the secondary side.

[0103] [E6] The processing apparatus according to any one of [E1] to [E5], wherein the low molecular weight component processing unit further includes a storage unit that stores the second solution, and a PFAS trapping unit whose inlet is located downstream of the flow of the second solution along the liquid surface of the storage unit.

[0104] [E7] The processing apparatus according to [E6], wherein the low molecular weight component processing section further includes a microbubble generating section that generates microbubbles in the second solution in the storage section.

[0105] [E8] A treatment method for treating waste liquid discharged from a semiconductor manufacturing device, comprising: a step of sorting the waste liquid into a first solution having a predetermined concentration or more of high molecular weight components and a second solution having a predetermined concentration or more of low molecular weight components but not having a predetermined concentration or more of high molecular weight components; and a step of treating the second solution sorted out in the sorting step to increase the concentration of the low molecular weight components.

[0106] [E9] A substrate processing apparatus comprising: a load / unload block for loading and unloading a carrier containing a plurality of substrates; an atmospheric processing group including a plurality of atmospheric processing devices; a vacuum processing group including a plurality of vacuum processing devices and positioned directly above the atmospheric processing group; an atmospheric processing transport path for transferring substrates to the atmospheric processing device; and a vacuum processing transport path for transferring substrates to the vacuum processing device, wherein the atmospheric processing transport path and the vacuum processing transport path are connected to the load / unload block.

[0107] [E10] The substrate processing apparatus according to [E9], further comprising a mounting base that is disposed so as to cover the atmospheric processing group and supports the vacuum processing group.

[0108] [E11] The substrate processing apparatus according to [E9] or [E10], further comprising: a relay block connected to the atmospheric processing transport path and the vacuum processing transport path; and a bypass transport path above the vacuum processing group for transferring substrates between the load / unload block and the relay block.

[0109] [E12] The substrate processing apparatus according to any one of [E9] to [E11], further comprising a pressure reduction / exhaust switching unit that connects a pressure reduction / exhaust line of the vacuum processing apparatus with an atmospheric exhaust line of the atmospheric processing apparatus, and that enables the interior of the atmospheric processing apparatus to be reduced in pressure via the atmospheric exhaust line.

[0110] [E13] The substrate processing apparatus according to any one of [E9] to [E12], further comprising: a heat exhaust line of the vacuum processing apparatus; a heat conduction member connected to the atmospheric processing apparatus and enabling heat conduction; and a heat conduction mechanism connecting the heat exhaust line and the heat conduction member to each other and conducting heat to the atmospheric processing apparatus.

[0111] [E14] A processing system comprising: the substrate processing apparatus according to any one of [E9] to [E13]; and one waste processing apparatus that processes discharge from the atmospheric processing apparatus and discharge from the vacuum processing apparatus.

[0112] 10...PFAS detoxification system, 11...concentrator, 12...sulfuric acid treatment tank, 13...cooler, 14...detoxification device, 100...semiconductor manufacturing device, 111...lithography device, 112...cleaning device, 113...etching device, 114...film formation device

Claims

1. A substrate processing apparatus comprising: a loading / unloading block for loading / unloading a carrier that houses a plurality of substrates; an atmospheric processing group including a plurality of atmospheric processing apparatuses; a vacuum processing group including a plurality of vacuum processing apparatuses and located directly above the atmospheric processing group; an atmospheric processing transfer path for transferring substrates to / from the atmospheric processing apparatuses; and a vacuum processing transfer path for transferring substrates to / from the vacuum processing apparatuses, wherein the atmospheric processing transfer path and the vacuum processing transfer path are connected to the loading / unloading block.

2. The substrate processing apparatus according to claim 1, further comprising an installation pedestal arranged to cover the atmospheric processing group and support the vacuum processing group.

3. The substrate processing apparatus according to claim 1, further comprising: a relay block connected to the atmospheric processing transfer path and the vacuum processing transfer path; and a bypass transfer path for transferring substrates between the loading / unloading block and the relay block above the vacuum processing group.

4. The substrate processing apparatus according to claim 1, further comprising a decompression exhaust switching unit in which a decompression exhaust line of the vacuum processing apparatus and an atmospheric exhaust line of the atmospheric processing apparatus are connected, and the inside of the atmospheric processing apparatus can be decompressed through the atmospheric exhaust line.

5. The substrate processing apparatus according to claim 1, further comprising: an exhaust heat line of the vacuum processing apparatus; a heat conduction member connected to the atmospheric processing apparatus and enabling heat conduction; and a heat conduction mechanism connecting the exhaust heat line and the heat conduction member to transfer heat to the atmospheric processing apparatus.

6. A processing system comprising: the substrate processing apparatus according to any one of claims 1 to 5; and one waste processing apparatus for processing discharges from the atmospheric processing apparatus and discharges from the vacuum processing apparatus.

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