Mask device and method for manufacturing organic device

Abstract

This mask device comprises a mask and a frame connected to the mask. The mask includes a first layer and a second layer. The first layer includes a first surface, a second surface, and at least one first opening. The second layer includes a third surface facing the second surface, a fourth surface, and a plurality of second openings overlapping the first opening. The frame faces the first surface of the outer region of the first layer. At least a part of the frame extends to the outside of the outer edge of the first layer in planar view. The mask is fixed to the frame by a screw.

Description

Mask device and method for manufacturing organic device

[0001] SUMMARY OF THE INVENTION Embodiments of the present disclosure relate to a mask apparatus and a method for manufacturing an organic device.

[0002] Vapor deposition is known as a method for forming precise patterns. In vapor deposition, a mask with openings formed therein is first combined with a substrate. Then, a vapor deposition material is applied to the substrate through the openings in the mask. As a result, a vapor deposition layer containing the vapor deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels of organic electroluminescence (EL) display devices. Patent Document 1 discloses a mask used in vapor deposition.

[0003] JP 2009-062565 A

[0004] If openings are formed close to the outer edge of the mask, the outer edge becomes easily damaged, making the mask difficult to handle. Furthermore, when openings are formed close to the outer edge, the outer edge of the mask is narrow. As a result, when gripping the mask, there is a risk that not only the outer edge but also the region inside the outer edge, i.e., the region of the mask where the openings are formed, will be gripped. In this case, there is a risk that the region of the mask where the openings are formed will be contaminated. On the other hand, there is a demand for forming openings close to the outer edge of the mask, which enables the deposition layer to be formed over a wider area of ​​the substrate using a single mask.

[0005] The embodiments of the present disclosure aim to effectively solve such problems.

[0006] A mask device according to one embodiment of the present disclosure includes a mask and a frame connected to the mask, wherein the mask may include a first layer including a first surface, a second surface located opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a planar view, and a second layer including a third surface opposite the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view, wherein the frame may face the first surface of the outer region of the first layer, and at least a portion of the frame may extend outside the outer edge of the first layer in a planar view, and the frame may be fixed to the mask by screws.

[0007] According to embodiments of the present disclosure, handling of the mask is facilitated.

[0008] 5B is an enlarged view of a portion surrounded by a two-dot chain line in the cross section shown in FIG. 5A. FIG. 5C is a cross-sectional view showing an example of an effective area. FIG. 5D is an enlarged view of a portion surrounded by a two-dot chain line in the cross section shown in FIG. 5B. FIG. 6 is a view corresponding to FIG. 6, showing a modified example of a mask device. FIG. 5C is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. FIG. 5D is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. FIG. 5E is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. FIG. 5F is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. FIG. 5G is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. Fig. 6 is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. Fig. 7 is a cross-sectional view showing an example of a method for manufacturing a mask device according to an embodiment. Fig. 8 is a cross-sectional view showing a modified example of a mask device, corresponding to Fig. 6. Fig. 9 is a cross-sectional view showing a modified example of a mask device, corresponding to Fig. 6. Fig. 10 is a diagram showing an example of an apparatus including an organic device.

[0009] In this specification and drawings, unless otherwise specified, terms meaning the materials underlying a certain structure, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0010] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0011] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0012] In this specification and drawings, unless otherwise specified, the state in which the surface of element A is "opposed to" the surface of element B includes not only the case in which the surface of element A is in contact with the surface of element B, but also the case in which element C is located between the surfaces of element A and element B. In other words, the term "opposed to" is a term that indicates the orientation of two surfaces.

[0013] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0014] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other examples to the extent that no contradiction occurs. In addition, other examples may also be combined with each other to the extent that no contradiction occurs.

[0015] Unless otherwise specified, in the present specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the range that does not cause a contradiction.

[0016] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes of a display device other than an organic electroluminescence (EL) display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

[0017] A first aspect of the present disclosure is a mask device comprising: a mask; and a frame connected to the mask, wherein the mask comprises: a first layer including a first surface, a second surface located opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a planar view; and a second layer including a third surface opposite the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view, wherein the frame faces the first surface of the outer region of the first layer, and at least a portion of the frame extends outside the outer edge of the first layer in a planar view, and the mask is fixed to the frame with screws.

[0018] In the mask device according to the second aspect in accordance with the first aspect described above, the first layer may include silicon or a silicon compound, and the frame may include glass or metal.

[0019] In the mask device according to the third aspect in accordance with the first aspect or the second aspect, a buffer material may be provided between the mask and the frame.

[0020] In the mask device according to the fourth aspect, which is in accordance with any one of the first aspect to the third aspect described above, the mask and the frame may be arranged in this order in a direction from the head of the screw toward the leg, and a buffer material may be provided between the tip of the leg of the screw and the frame.

[0021] In the mask device according to the fifth aspect, which is in accordance with any one of the first aspect to the fourth aspect described above, the mask and the frame may be arranged in this order in a direction from the head of the screw toward the foot, and the top surface of the head of the screw may be flush with the fourth surface of the second layer, or may be located between the fourth surface and the first surface of the first layer.

[0022] In the mask device according to the sixth aspect, which is in accordance with any one of the first aspect to the fifth aspect, the mask may be fixed to the frame by two or more screws.

[0023] In the mask device according to the seventh aspect, which is in accordance with any one of the first aspect to the sixth aspect described above, the mask may be fixed to the frame by one or more pairs of screws, each of which is arranged on either side of the plurality of second openings in a plan view.

[0024] In the mask device according to the eighth aspect, which is in accordance with any one of the first aspect to the seventh aspect, the frame may be formed with a step portion for receiving at least a part of the mask.

[0025] In the mask device according to the ninth aspect, which is in accordance with any one of the first aspect to the eighth aspect, the mask may be detachably fixed to the frame.

[0026] In the mask device according to the tenth aspect, which is in accordance with any one of the first aspect to the ninth aspect, the screw may be made of the same material as the frame.

[0027] An eleventh aspect of the present disclosure is a method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by a vapor deposition method using a mask apparatus according to any one of the first aspect to the tenth aspect described above.

[0028] An embodiment will be described with reference to Figures 1 to 21. First, an organic device 100 including an organic layer formed using a mask will be described. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0029] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along an in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0030] The element 115 may have a first electrode 120 , an organic layer 130 overlying the first electrode 120 , and a second electrode 140 overlying the organic layer 130 .

[0031] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120. "Planar view" means viewing an object along the normal direction to the surface of a plate-like member such as the substrate 110.

[0032] The substrate 110 may be an insulating member. Examples of materials that can be used for the substrate 110 include rigid materials such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of silicon wafers used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment used in semiconductor manufacturing processes. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using equipment used in semiconductor manufacturing processes.

[0033] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140 or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0034] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0035] The organic layer 130 includes an organic material. When the organic layer 130 is energized, the organic layer 130 can perform some function. "Electrification" means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be, for example, a light-emitting layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may include an organic semiconductor material.

[0036] 1 , the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0037] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0038] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0039] The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof. As shown in FIG. 1 , the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0040] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Fig. 2 is a diagram showing a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process for depositing a vapor deposition material on an object.

[0041] 2 , the vapor deposition apparatus 10 may include therein a vapor deposition source 6, a heater 8, and a framed mask 15. The vapor deposition apparatus 10 may further include an exhaust unit for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7 such as an organic material or a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 under a vacuum atmosphere.

[0042] The framed mask 15 includes a mask 20 and a frame 60 attached to the mask 20. The framed mask 15 is also referred to as a mask device 15. The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The exit surface 202 is located opposite the incident surface 201. The mask device 15 is supported by a mask holder 9. The mask device 15 is arranged so that the incident surface 201 faces the deposition source 6 and the exit surface 202 faces the first surface 111 of the substrate 110. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0043] As shown in FIG. 2 , the deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 includes a metal material, the magnet 5 can magnetically attract the mask 20 toward the substrate 110. As a result, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. This can prevent shadows from occurring during the deposition process. In this application, a shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, or the like.

[0044] Next, the mask device 15 will be described in detail. Fig. 3 is a plan view showing an example of the mask device 15 when viewed from the incident surface 201 side. Fig. 4 is a plan view showing an example of the mask device 15 when viewed from the exit surface 202 side. Fig. 5A is a cross-sectional view taken along line VV of the mask device 15 in Fig. 3. Fig. 5B is an enlarged view of the portion surrounded by the two-dot chain line in the cross section of Fig. 5A.

[0045] First, the mask 20 will be described in detail. As shown in Fig. 5A, the mask 20 includes a first layer 30 and a second layer 40 arranged in this order from the incident surface 201 toward the exit surface 202. The first layer 30 may be made of, for example, silicon, a silicon compound, glass, or aluminum oxide (AlO ３ ) The silicon compound is, for example, silicon carbide (SiC). The second layer 40 includes, for example, a resin material. As shown in FIG. 5A , the mask 20 may further include an intermediate layer 50. The intermediate layer 50 is disposed between the first layer 30 and the second layer 40. Each layer will be described below.

[0046] 5B , the first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301.

[0047] The first opening 31 penetrates the first layer 30 from the first surface 301 to the second surface 302. As shown in Fig. 3 , the first layer 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1.

[0048] The first opening 31 may correspond to one screen of the organic EL display device. The mask 20 shown in Fig. 3 can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in Fig. 3, the first opening 31 may have a rectangular outline in a plan view.

[0049] The first wall surface 32 is the surface of the first layer 30 facing the first opening 31. In the example shown in FIG.

[0050] As shown in Fig. 3 , the region of the first layer 30 where the first openings 31 are not formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is a region located between two adjacent first openings 31 in a plan view. The outer region 35 is a region located between an outer edge 303 of the first layer 30 and the first openings 31 in a plan view. As shown in Fig. 3 , the inner region 36 may extend in a first direction D1 and a second direction D2.

[0051] When the first layer 30 includes silicon or a silicon compound, the first layer 30 may be fabricated, for example, by processing a silicon wafer. As shown in FIG. 3 , an outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also referred to as an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also referred to as a notch. When the first layer 30 is fabricated by processing a silicon wafer, the orientation flat and the notch represent the crystal orientation of the silicon wafer.

[0052] The maximum dimension S1 of the first layer 30 in a planar view may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension S1 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension S1 may be defined by a first group consisting of 100 mm, 150 mm, and 200 mm and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of the dimension S1 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension S1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension S1 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S1 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.

[0053] The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 3 mm or more, 10 mm or more, or 20 mm or more. The dimension S2 may be, for example, 30 mm or less, 50 mm or less, or 100 mm or less. The range of the dimension S2 may be defined by a first group consisting of 3 mm, 10 mm, and 20 mm and / or a second group consisting of 30 mm, 50 mm, and 100 mm. The range of the dimension S2 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension S2 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension S2 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S2 may be, for example, 3 mm or more and 100 mm or less, 3 mm or more and 50 mm or less, 3 mm or more and 30 mm or less, 3 mm or more and 20 mm or less, 3 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, or 50 mm or more and 100 mm or less.

[0054] The spacing S3 between two first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more. The spacing S3 may be, for example, 10 mm or less, 15 mm or less, or 20 mm or less. The range of the spacing S3 may be defined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm and / or a second group consisting of 10 mm, 15 mm, and 20 mm. The range of the spacing S3 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the spacing S3 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the spacing S3 may be defined by a combination of any two of the values ​​included in the second group described above. The spacing S3 may be, for example, 0.1 mm or more and 20 mm or less, 0.1 mm or more and 15 mm or less, 0.1 mm or more and 10 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 20 mm or less, 0.5 mm or more and 15 mm or less, 0.5 mm or more and 10 mm or less, 0.5 mm or more and 1.0 mm or less, 1.0 mm or more and 20 mm or less, 1.0 mm or more and 15 mm or less, 1.0 mm or more and 10 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, or 15 mm or more and 20 mm or less.

[0055] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 may be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. The thickness T1 may be, for example, 600 μm or less, 800 μm or less, or 1000 μm or less. The range of the thickness T1 may be defined by a first group consisting of 50 μm, 100 μm, and 200 μm, and / or a second group consisting of 600 μm, 800 μm, and 1000 μm. The range of the thickness T1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the thickness T1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the thickness T1 may be defined by a combination of any two of the values ​​included in the second group described above. The thickness T1 may be, for example, 50 μm or more and 1000 μm or less, 50 μm or more and 800 μm or less, 50 μm or more and 600 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 800 μm or less, 100 μm or more and 600 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 1000 μm or less, 200 μm or more and 800 μm or less, 200 μm or more and 600 μm or less, 600 μm or more and 1000 μm or less, 600 μm or more and 800 μm or less, or 800 μm or more and 1000 μm or less.

[0056] Next, the second layer 40 will be described. The second layer 40 includes a third surface 401, a fourth surface 402, and a plurality of second openings 41. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401.

[0057] The second openings 41 penetrate the second layer 40 from the third surface 401 to the fourth surface 402. One second opening 41 corresponds to one organic layer 130. A group of the regularly arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in Figures 3 and 4 , a group of the regularly arranged second openings 41 may overlap one first opening 31 in a plan view. The groups of the second openings 41 are supported by the first layer 30 formed by processing a single member such as a silicon wafer.

[0058] The second layer 40 may be divided into a peripheral region 43 and an effective region 44. The peripheral region 43 is a region that overlaps with the first layer 30 in a planar view. The effective region 44 is a region where a group of a plurality of regularly arranged second openings 41 is distributed. The peripheral region 43 may be further divided into an outer region 45 and an inner region 46. The outer region 45 is a region that overlaps with the outer region 35 of the first layer 30 in a planar view. The inner region 46 is a region that overlaps with the inner region 36 of the first layer 30 in a planar view.

[0059] 5C is a cross-sectional view showing an example of the effective area 44. The second layer 40 includes a second wall surface 42 facing the second opening 41. As shown in Fig. 5C, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it approaches the third surface 401. By including the tapered surface 42a in the second wall surface 42, it is possible to suppress the occurrence of a shadow near the second wall surface 42.

[0060] In FIG. 5C , the symbol S8 represents the width of the tapered surface 42 a in the direction in which the second openings 41 are aligned. The width S8 may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more. The width S8 may be, for example, 10 μm or less, 20 μm or less, or 25 μm or less. The range of the width S8 may be determined by a first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm and / or a second group consisting of 10 μm, 20 μm, and 25 μm. The range of the width S8 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the width S8 may be determined by a combination of any two of the values ​​included in the first group. The range of the width S8 may be determined by a combination of any two of the values ​​included in the second group. The width S8 may be, for example, 0.1 μm or more and 25 μm or less, 0.1 μm or more and 20 μm or less, 0.1 μm or more and 10 μm or less, 0.1 μm or more and 1.0 μm or less, 0.1 μm or more and 0.5 μm or less, 0.5 μm or more and 25 μm or less, 0.5 μm or more and 20 μm or less, 0.5 μm or more and 10 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 25 μm or less, 1.0 μm or more and 10 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or more and 25 μm or less.

[0061] In FIG. 5C , the symbol θ1 represents the angle between the second wall surface 42 and the fourth surface 402. The angle θ1 may be, for example, greater than or equal to 50°, greater than or equal to 55°, or greater than or equal to 60°. The angle θ1 may be, for example, less than or equal to 80°, less than or equal to 85°, or less than 90°. The range of the angle θ1 may be determined by a first group consisting of 50°, 55°, and 60° and / or a second group consisting of 80°, 85°, and 90°. The range of the angle θ1 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the angle θ1 may be determined by a combination of any two of the values ​​included in the first group. The range of the angle θ1 may be determined by a combination of any two of the values ​​included in the second group. The angle θ1 may be, for example, 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 60°, 60° or more and less than 90°, 60° or more and less than 85°, 60° or more and less than 80°, 80° or more and less than 90°, 80° or more and less than 85°, or 85° or more and less than 90°.

[0062] The second layer 40 may contain a metal material. When the second layer 40 contains a metal material, the mask 20 can be attached to the substrate 110 by using a magnet 5. In this case, the mask 20 can be attracted to the magnet 5 by magnetic force, thereby improving the adhesion between the mask 20 and the substrate 110. Therefore, the definition of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved.

[0063] The metal material contained in the second layer 40 may be a magnetic metal material. Examples of the magnetic metal material include nickel, iron, cobalt, and alloys thereof. For example, the material constituting the second layer 40 may be an iron alloy containing nickel. The iron alloy may further contain cobalt in addition to nickel. For example, the material of the second layer 40 may be an iron alloy containing nickel and cobalt in total at a content of 30% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less. Examples of the iron alloy containing nickel include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, and a low-thermal expansion Fe—Ni-based plated alloy containing 38% by mass or more and 54% by mass or less of nickel. Examples of the iron alloy containing nickel and cobalt include a Super Invar material containing 30% by mass or more and 34% by mass or less of nickel, and further containing cobalt. Using such an iron alloy can reduce the thermal expansion coefficient of the second layer 40. For example, when a glass substrate is used as the substrate 110, the thermal expansion coefficient of the second layer 40 can be adjusted to a value equal to or close to that of the glass substrate, thereby preventing a decrease in accuracy.

[0064] A nickel alloy containing cobalt may be used as the material for forming the second layer 40. When a nickel alloy containing cobalt is used, a nickel alloy containing 8 mass % or more and 10 mass % or less of cobalt may be used as the material for the second layer 40. When such nickel or nickel alloy is used, decomposition of the components of the plating solution used in the second layer formation step described below can be suppressed, and the stability of the plating solution can be improved.

[0065] The second layer 40 may be composed of a single metal layer or may include multiple metal layers. When the mask 20 includes the intermediate layer 50, the second layer 40 is composed of a material that is resistant to an etchant that etches the intermediate layer 50.

[0066] The thickness of the second layer 40 is smaller than the thickness T1 of the first layer 30. The thickness of the second layer 40 may be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more. The thickness of the second layer 40 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The thickness range of the second layer 40 may be defined by a first group consisting of 0.5 μm, 1.0 μm, and 2.0 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The thickness range of the second layer 40 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The thickness range of the second layer 40 may be defined by a combination of any two of the values ​​included in the first group described above. The thickness range of the second layer 40 may be defined by a combination of any two of the values ​​included in the second group described above. The thickness of the second layer 40 may be, for example, 0.5 μm to 25 μm, 0.5 μm to 10 μm, 0.5 μm to 5 μm, 0.5 μm to 2.0 μm, 0.5 μm to 1.0 μm, 1.0 μm to 25 μm, 1.0 μm to 10 μm, 1.0 μm to 5 μm, 1.0 μm to 2.0 μm, 2.0 μm to 25 μm, 2.0 μm to 10 μm, 2.0 μm to 5 μm, 5 μm to 25 μm, 5 μm to 10 μm, or 10 μm to 25 μm. Having a thickness of 25 μm or less of the second layer 40 can suppress the occurrence of shadows. By making the thickness of the second layer 40 0.5 μm or more, it is possible to prevent defects such as pinholes and deformation from occurring in the second layer 40 .

[0067] The dimension S4 of the second opening 41 in plan view may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The dimension S4 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the dimension S4 may be defined by a first group consisting of 1 μm, 2 μm, and 3 μm, and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the dimension S4 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension S4 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension S4 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S4 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

[0068] The spacing S5 between two second openings 41 in the direction in which the second openings 41 are arranged may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The spacing S5 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the spacing S5 may be determined by a first group consisting of 1 μm, 2 μm, and 3 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the spacing S5 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the spacing S5 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the spacing S5 may be determined by a combination of any two of the values ​​included in the second group described above. The spacing S5 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

[0069] A distance S6 between the first wall surface 32 and the second opening 41 in a plan view may be larger than the distance S5. As a result, it is possible to prevent a shadow from being generated in the second opening 41 close to the first wall surface 32.

[0070] Next, the intermediate layer 50 will be described. The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the second layer 40. For example, the intermediate layer 50 may function as a stopper layer that stops etching in the process of processing the first layer 30 by etching. When the intermediate layer 50 is a stopper layer, the intermediate layer 50 may contain aluminum, an aluminum alloy, titanium, or a titanium alloy. When the intermediate layer 50 is a stopper layer, the intermediate layer 50 may contain an inorganic compound such as silicon oxide. Alternatively, the intermediate layer 50 may function to bond the first layer 30 and the second layer 40. For example, the intermediate layer 50 may be a bonding layer containing an adhesive.

[0071] The thickness of the intermediate layer 50 is not particularly limited as long as it can exhibit the above-described functions. For example, the thickness of the intermediate layer 50 may be smaller than or equal to the thickness of the second layer 40. The thickness of the intermediate layer 50 may be, for example, 5 nm or greater, 50 nm or greater, or 75 nm or greater. The thickness of the intermediate layer 50 may be, for example, 1 μm or less, 10 μm or less, or 100 μm or less. The thickness range of the intermediate layer 50 may be defined by a first group consisting of 5 nm, 50 nm, and 75 nm, and / or a second group consisting of 1 μm, 10 μm, and 100 μm. The thickness range of the intermediate layer 50 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The thickness range of the intermediate layer 50 may be defined by a combination of any two of the values ​​included in the first group described above. The thickness range of the intermediate layer 50 may be determined by a combination of any two of the values ​​included in the second group described above. The thickness of the intermediate layer 50 may be, for example, 5 nm to 100 μm, 5 nm to 10 μm, 5 nm to 1 μm, 5 nm to 75 nm, 5 nm to 50 nm, 50 nm to 100 μm, 50 nm to 10 μm, 50 nm to 1 μm, 50 nm to 75 nm, 75 nm to 100 μm, 75 nm to 10 μm, 75 nm to 1 μm, 75 nm to 1 μm, 1 μm to 100 μm, 1 μm to 10 μm, or 10 μm to 100 μm.

[0072] Preferably, the intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. As a result, the occurrence of a shadow due to the intermediate layer 50 can be suppressed.

[0073] In the above-described mask 20, the region including the region where the first opening 31 is formed, the region where the second opening 41 is formed (effective region 44), and the inner regions 36, 46 will hereinafter also be referred to as the inner region 26 of the mask 20. The region including the outer regions 35, 45 will also be referred to as the outer region 25 of the mask 20. The outer region 25 surrounds the inner region 26. The outer region 25 includes a connection region 27 to which the frame 60 is connected. The connection region 27 is the outer edge region of the outer region 25.

[0074] Next, the frame 60 will be described in detail. The frame 60 is attached to the mask 20 for the purpose of being gripped when handling the mask 20, for example, when moving the mask 20. As shown in FIG. 3 and other figures, the mask 20 has second openings 41, and therefore the first openings 31, formed up to the vicinity of its outer edge. When handling the mask 20, for example, when moving the mask 20, it is desirable to grip the outer region 35 of the first layer 30 to prevent deformation of the second openings 41 of the second layer 40 or to prevent contamination of the second layer 40. However, because the first openings 31 are formed up to the vicinity of the outer edge 303 of the first layer 30, the width of the outer region 35 is insufficient for gripping the outer region 35. Furthermore, because the first openings 31 are formed up to the vicinity of the outer edge 303 of the first layer 30, the outer region 35 is narrow. The narrow outer region 35 is easily damaged. The outer region 35 is particularly susceptible to damage when the first layer 30 contains silicon or a silicon compound. By attaching the frame 60 to the outer region 25 of the mask 20, the frame 60 can be grasped when handling the mask 20, and the risk of damage to the first layer 30 is reduced. As a result, the mask 20 can be easily handled.

[0075] 3 to 5B, the frame 60 includes a fifth surface 601 and a sixth surface 602. The fifth surface 601 faces the same side as the fourth surface 402. The sixth surface 602 is located on the opposite side of the fifth surface 601. In the illustrated example, the fifth surface 601 and the first surface 301 face each other.

[0076] 5A and 5B , the mask 20 is fixed to the frame 60 with screws 70. The frame 60 faces the first surface 301 of the outer region 35 of the first layer 30. In the illustrated example, a buffer material 75 is disposed between the first surface 301 of the outer region 35 and a fifth surface 601 of the frame 60. The frame 60 faces the first layer 30 via the buffer material 75. In a plan view, the frame 60 does not overlap with the first opening 31. In addition, in a plan view, at least a portion of the frame 60 extends beyond the outer edge 303 of the first layer 30. Therefore, the frame 60 expands the area for gripping the mask 20 when handling it.

[0077] The frame 60 includes a glass material or a metal material. The glass material is quartz glass, borosilicate glass, alkali-free glass, soda glass, etc. The metal material is invar or stainless steel such as SUS430 or SUS304. By including these materials in the frame 60, the rigidity of the frame 60 can be made higher than that of the first layer 30. The material of the frame 60 may be determined so that the frame 60 has the required rigidity, taking into consideration the gripping force of an operator or robot hand handling the mask device 15.

[0078] Furthermore, it is preferable that the linear thermal expansion coefficient of the frame 60 is approximately the same as the linear thermal expansion coefficient of the first layer 30. As a result, when the mask device 15 is heated, the elongation rates of the frame 60 and the first layer 30 can be approximately the same. As a result, the risk of damage to the first layer 30 is reduced. Specifically, the absolute value of the difference between the linear thermal expansion coefficient of the frame 60 and the linear thermal expansion coefficient of the first layer 30 is 15 ppm / °C or less, or may be 10 ppm / °C or less, or may be 5.0 ppm / °C or less.

[0079] In the illustrated example, the frame 60 is formed in an annular shape. The frame 60 has a region that extends circumferentially outside the outer edge 303 of the first layer 30 in a plan view. This effectively reduces the risk of damage to the outer region 35 of the first layer 30 when handling the mask 20. More specifically, a third opening 61 that penetrates from the fifth surface 601 to the sixth surface 602 is formed in the center of the frame 60. In the illustrated example, the third opening 61 has a shape similar to the outer edge 303 of the first layer 30. The maximum dimension S9 of the third opening 61 is smaller than the maximum dimension S1 of the outer edge 303 of the first layer 30. In a plan view, the third opening 61 overlaps the inner region 26 of the mask 20.

[0080] The shape and dimensions of the outer edge 603 of the frame 60 are not particularly limited. The shape and dimension S10 of the outer edge 603 of the frame 60 may be determined based on the dimensions and shape of the hand of a worker or robot hand handling the mask device 15 and the dimensions and shape of the mask holder 9 of the deposition apparatus 10. The outer edge 603 of the frame 60 may be rectangular or another polygonal shape. The dimension S10 of the outer edge 603 of the frame 60 may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension S10 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension S10 may be defined by a first group consisting of 100 mm, 150 mm, and 200 mm, and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of dimension S10 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of dimension S10 may be defined by a combination of any two of the values ​​included in the first group described above. The range of dimension S10 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S10 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.

[0081] The distance S11 between the outer edge 603 of the frame 60 and the outer edge 303 of the first layer 30 may also be determined based on the dimensions and shape of the hand of a worker or robot hand handling the mask device 15 and the dimensions and shape of the mask holder 9 of the vapor deposition apparatus 10. The distance S11 may be, for example, 5 mm or more, 10 mm or more, or 15 mm or more. The distance S11 may be, for example, 30 mm or less, 60 mm or less, or 100 mm or less. The range of the distance S11 may be defined by a first group consisting of 5 mm, 10 mm, and 15 mm and / or a second group consisting of 30 mm, 60 mm, and 100 mm. The range of the distance S11 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the distance S11 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the distance S11 may be determined by a combination of any two of the values ​​included in the second group. The distance S11 may be, for example, 5 mm to 100 mm, 5 mm to 60 mm, 5 mm to 30 mm, 5 mm to 15 mm, 5 mm to 10 mm, 10 mm to 100 mm, 10 mm to 60 mm, 10 mm to 30 mm, 10 mm to 15 mm, 15 mm to 100 mm, 15 mm to 60 mm, 15 mm to 30 mm, 30 mm to 100 mm, 30 mm to 60 mm, or 60 mm to 100 mm.

[0082] As shown in FIG. 5B , the frame 60 includes a connection region 67 around the third opening 61 to which the mask 20 is connected. The connection region 67 overlaps the connection region 27 of the mask 20 in a planar view. The width S12 of the connection regions 27, 67 may be, for example, 1 mm or more, 5 mm or more, or 10 mm or more. The width S12 may be, for example, 20 mm or less, 25 mm or less, or 30 mm or less. The range of the width S12 may be defined by a first group consisting of 1 mm, 5 mm, and 10 mm and / or a second group consisting of 20 mm, 25 mm, and 30 mm. The range of the width S12 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the width S12 may be defined by a combination of any two of the values ​​included in the first group. The range of the width S12 may be defined by a combination of any two of the values ​​included in the second group. The width S12 may be, for example, 1 mm or more and 30 mm or less, 1 mm or more and 25 mm or less, 1 mm or more and 20 mm or less, 1 mm or more and 10 mm or less, 1 mm or more and 5 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 25 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 30 mm or less, 20 mm or more and 25 mm or less, or 25 mm or more and 30 mm or less.

[0083] The thickness T2 of the frame 60 is also not particularly limited. It may be determined based on the dimensions and shape of the hand of a worker or robot hand handling the mask device 15 and the dimensions and shape of the mask holder 9 of the vapor deposition apparatus 10. The thickness T2 may be, for example, 500 μm or more, 2 mm or more, or 5 mm or more. The thickness T2 may be, for example, 10 mm or less, 20 mm or less, or 30 mm or less. The range of the thickness T2 may be defined by a first group consisting of 500 μm, 2 mm, and 5 mm, and / or a second group consisting of 10 mm, 20 mm, and 30 mm. The range of the thickness T2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T2 may be defined by a combination of any two of the values ​​included in the first group. The range of the thickness T2 may be defined by a combination of any two of the values ​​included in the second group. The thickness T2 may be, for example, 500 μm or more and 30 mm or less, 500 μm or more and 20 mm or less, 500 μm or more and 10 mm or less, 500 μm or more and 5 mm or less, 500 μm or more and 2 mm or less, 2 mm or more and 30 mm or less, 2 mm or more and 20 mm or less, 2 mm or more and 10 mm or less, 2 mm or more and 5 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, or 20 mm or more and 30 mm or less.

[0084] By determining the shape and dimensions of the outer edge 603 of the frame 60 and the thickness T2 of the frame 60 based on the dimensions and shape of the robot hand that handles the mask device 15 and the dimensions and shape of the mask holder 9 of the vapor deposition apparatus 10, the shape and dimensions of the mask device 15 can be made suitable for an existing robot hand or an existing vapor deposition apparatus 10. In other words, it is not necessary to make the shape and dimensions of the mask 20 suitable for an existing robot hand or an existing vapor deposition apparatus 10, and the degree of freedom in designing the mask 20 is improved.

[0085] In the illustrated example, the mask 20 protrudes from the fifth surface 601 of the frame 60. Furthermore, as will be described later, the screws 70 do not protrude from the exit surface 202 of the mask 20. Therefore, when a deposition layer is formed on the substrate 110 or a component on the substrate 110 through the mask 20, the exit surface 202 of the mask 20 can come into contact with the substrate 110 or a component on the substrate 110.

[0086] Next, the screws 70 will be described in detail. The screws 70 secure the mask 20 to the frame 60. By using the screws 70 to secure the mask 20 to the frame 60, the mask 20 can be easily connected to the frame 60. Furthermore, the mask 20 can be easily detachably connected to the frame 60. When the mask 20 is detachably connected to the frame 60, after using the mask device 15 in a vapor deposition process, the mask 20 can be removed from the frame 60 and the frame 60 can be used to fabricate a new mask device 15. The mask device 15 used in a vapor deposition process can be cleaned using an ultrasonic cleaner or the like and reused in a vapor deposition process. Repeated cleaning can cause the mask 20 to deform or break, resulting in misalignment or deformation of the second opening 41. When a vapor deposition process is performed using such a mask 20, the accuracy of the position and shape of the deposition layers, such as the organic layer 130 and the second electrode 140, formed on the substrate 110, deteriorates. Therefore, if the mask device 15 has been used several times, the mask 20 needs to be replaced.

[0087] 5B , the screw 70 has a head 71 and a leg 72. The mask 20 and the frame 60 are stacked in this order from the head 71 of the screw 70 toward the leg 72. The screw 70 is inserted through screw holes 20H, 60H formed in the mask 20 and the frame 60. The screw 70 and the screw holes 20H, 60H extend in the stacking direction of the mask 20 and the frame 60. The screw holes 20H, 60H overlap in the stacking direction of the mask 20 and the frame 60.

[0088] The screws 70 are arranged in the connection region 27 of the mask 20 and the connection region 67 of the frame 60. Corresponding to the arrangement of the screws 70, screw holes 20H are formed in the connection region 27 of the mask 20. The screw holes 20H penetrate the mask 20 from the exit surface 202 to the entrance surface 201. Furthermore, the screw holes 60H are formed in the connection region 67 of the frame 60. In the example shown in the figure, the screw holes 60H are formed as blind holes that are open on the fifth surface 601 of the frame 60. However, the screw holes 60H may also penetrate the frame 60 from the fifth surface 601 to the sixth surface 602.

[0089] The number of screws 70 for fixing the mask 20 to the frame 60 is not particularly limited. The number of screws 70 may be one or more, two or more, four or more, or eight or more. The greater the number of screws 70, the more improved the flatness of the mask 20 in the mask device 15. In the example shown in FIG. 4 , the mask 20 is fixed to the frame 60 by one or more pairs of screws 70 a, 70 a; 70 b, 70 b; 70 c, 70 c; or 70 d, 70 d, each of which is arranged with a plurality of second openings 41 between them in a plan view. This also improves the flatness of the mask 20 in the mask device 15. Improving the flatness of the mask 20 in the mask device 15 improves the accuracy of the position, shape, and other properties of vapor deposition layers, such as the organic layer 130 and the second electrode 140, on the substrate 110.

[0090] In the example shown in FIG. 6 , the top surface 71 a of the head 71 of the screw 70 is flush with the exit surface 202 of the mask 20. Therefore, the top surface 71 a of the head 71 of the screw 70 is flush with the fourth surface 402 of the second layer 40. In this case, when a deposition layer is formed on the substrate 110 or a component on the substrate 110 through the mask 20, the exit surface 202 of the mask 20 can be brought into contact with the substrate 110 or a component on the substrate 110. Of course, as shown in FIG. 7 , the top surface 71 a of the head 71 of the screw 70 may be located between the fourth surface 402 of the second layer 40 and the first surface 301 of the first layer 30. In this case, too, the exit surface 202 of the mask 20 can be brought into contact with the substrate 110 or a component on the substrate 110. "Flush" means that the two surfaces are located on the same horizontal plane.

[0091] The screws 70 may be made of high-speed steel, hardened steel, stainless steel, titanium alloy, aluminum alloy, nickel alloy, molybdenum alloy, tungsten alloy, ceramics such as alumina and zirconia, hard plastic, graphite, carbon fiber, or glass. The nickel alloy may be an Invar material. The stainless steel may be SUS430, SUS304, or the like. The glass may be quartz glass, borosilicate glass, alkali-free glass, soda glass, or the like. The screws 70 may be made of the same material as the frame 60. For example, if the frame 60 is made of glass, the screws 70 may also be made of glass. For example, if the frame 60 is made of metal, the screws 70 may also be made of metal. If the screws 70 are made of the same material as the frame 60, the screws 70 and the frame 60 can be fastened together well, allowing the mask 20 to be securely fixed to the frame 60.

[0092] The ratio L72 / R72 of the length L72 of the leg 72 of the screw 70 that extends inside the frame 60 to the diameter R72 of the leg 72 may be, for example, 1.5 or more, or 2 or more.

[0093] Next, the buffer material 75 will be described. The buffer material 75 has cushioning properties. By disposing the buffer material 75 between the mask 20 and the frame 60, the buffer material 75 can absorb the stress applied to the mask 20 from the frame 60. As a result, the risk of damage to the mask 20 can be reduced. Furthermore, if unevenness exists on the incident surface 201 and / or the fifth surface 601 in the connection regions 27, 67 of the mask 20 and the frame 60, the buffer material 75 deforms to fill the unevenness. Therefore, even if unevenness exists in the connection regions 27, 67 of the mask 20 and the frame 60, the mask 20 can be connected to the frame 60 so that the exit surface 202 of the mask 20 is flat. The buffer material 75 may include a resin-based or silicone-based elastic material. The buffer material 75 may also include porous ceramic.

[0094] As shown in FIG. 4 , the mask device 15 may include an alignment mark 16. The alignment mark 16 is formed, for example, on the exit surface 202 of the mask 20. The alignment mark 16 is used to adjust the relative position of the mask device 15 with respect to the substrate 110 (and therefore to adjust the relative position of the mask 20 with respect to the substrate 110). If the substrate 110 has a property of transmitting visible light, the alignment mark 16 can be seen through the substrate 110. The alignment mark 16 may be formed in the second layer 40, or in a layer other than the second layer 40. The alignment mark 16 may be located in the outer region 25 or the inner region 26 of the mask 20.

[0095] 4, the alignment mark 16 may have a circular outline in a plan view. Although not shown, the alignment mark 16 may have an outline other than a circle, such as a rectangle or a cross.

[0096] The thickness of each layer, the dimensions of each component, the spacing, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

[0097] (Method of Manufacturing Mask Device) Next, a method of manufacturing a mask device according to this embodiment will be described with reference to FIGS. 8 to 21 . First, a method of manufacturing the mask 20 will be described. First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.

[0098] 8, a resist formation step is carried out to partially form a resist layer 37A on the second surface 302 of the first layer 30. A resist opening 371A is formed in the resist layer 37A. The resist opening 371A is formed to face the screw hole 30H. The screw hole 30H is a portion of the screw hole 20H that extends within the first layer 30.

[0099] The resist layer 37A may be a photoresist. In this case, the resist layer 37A is formed on the second surface 302 by first coating the second surface 302 with a liquid resist material. After coating, a step of heating the resist layer 37A may be performed. Subsequently, a photolithography process is performed in which the resist layer 37A is exposed and developed. As a result, a resist opening 371A can be formed in the resist layer 37A.

[0100] Although not shown, the resist layer 37A may be a silicon oxide film partially formed on the second surface 302. The silicon oxide film is formed by, for example, partially performing a thermal oxidation process on the second surface 302.

[0101] 9 , a screw hole forming step is performed in which the first layer 30 is etched from the second surface 302 side to form screw holes 30H in the first layer 30. The etching in the screw hole forming step may be dry etching using an etching gas.

[0102] The screw hole 30H includes a first portion 30Ha that receives the head 71 of the screw 70 and a second portion 30Hb through which the leg 72 of the screw 70 is inserted. The diameter of the second portion 30Hb is generally uniform in the thickness direction of the first layer 30, while the diameter of the first portion 30Ha increases in the direction from the first surface 301 to the second surface 302. The method for forming such a screw hole 30H is not particularly limited, but the following method, for example, can be employed. First, as shown in FIG. 19 , the first layer 30 is etched by isotropic etching. As a result, the first portion 30Ha is formed in the first layer 30. By forming the first portion 30Ha by isotropic etching, the diameter of the first portion 30Ha increases in the direction from the first surface 301 to the second surface 302. Then, as shown in FIG. 20 , the bottom of the first portion 30Ha is etched by anisotropic etching to form the second portion 30Hb. By forming the second portion 30Hb by anisotropic etching, the diameter of the second portion 30Hb can be made approximately uniform in the thickness direction of the first layer 30. Through these steps, the screw hole 30H including the first portion 30Ha and the second portion 30Hb can be formed.

[0103] The etching process for forming the second portion 30Hb may be deep reactive ion etching. In this case, an etching gas in plasma form is used. The etching gas may be, for example, SF ６ It's gas.

[0104] After the screw holes 30H are formed in the first layer 30, the resist layer 37A is removed. For example, a resist processing liquid is supplied to the second surface 302. When the resist layer 37A is a photoresist, the resist processing liquid contains, for example, N-methyl-2-pyrrolidone. The resist layer 37A may be removed by irradiating the resist layer 37A with oxygen plasma. When the resist layer 37A is a silicon oxide film, the resist processing liquid contains, for example, hydrofluoric acid. CF ４ The resist layer 37A may be removed by dry etching using gas or the like.

[0105] 10 , the intermediate layer 50 is formed on the second surface 302 of the first layer 30. The intermediate layer 50 may be formed on the entire second surface 302. The intermediate layer 50 may also be formed inside the screw holes 30H. The intermediate layer 50 may be formed by a vacuum film formation method such as sputtering, for example.

[0106] 11, a resist layer 37B is formed partially on the intermediate layer 50. A resist opening 371B is formed in the resist layer 37B. The resist opening 371B is formed to face the screw hole 30H.

[0107] The resist layer 37B may be a photoresist. In this case, the resist layer 37B is formed on the intermediate layer 50 by first coating the intermediate layer 50 with a liquid resist material. After coating, a step of heating the resist layer 37B may be performed. Next, a photolithography process is performed in which the resist layer 37B is exposed and developed. As a result, a resist opening 371B can be formed in the resist layer 37B.

[0108] 12, the intermediate layer 50 is etched from the resist layer 37B side. As a result, a screw hole 50H is formed in the intermediate layer 50, and the intermediate layer 50 inside the screw hole 30H is removed. The screw hole 50H is the portion of the screw hole 20H that extends inside the intermediate layer 50. The etching for removing the intermediate layer 50 may be dry etching using an etching gas.

[0109] Subsequently, the resist layer 37B is removed. For example, a resist processing liquid is supplied to the intermediate layer 50. When the resist layer 37B is a photoresist, the resist processing liquid contains, for example, N-methyl-2-pyrrolidone. The resist layer 37B may be removed by irradiating the resist layer 37B with oxygen plasma.

[0110] 13, a resist pattern formation process is carried out to form a plurality of resist protrusions 371C, 372C on the intermediate layer 50. The resist protrusions 371C are formed in a pattern corresponding to the second openings 41. The resist protrusions 371C are formed at positions that overlap the second openings 41 on the intermediate layer 50 in a plan view. The resist protrusions 372C are formed at positions that overlap the screw holes 50H, 30H. The resist protrusions 372C fill the screw holes 50H, 30H and protrude from the screw holes 50H, 30H.

[0111] The resist convex portions 371C and 372C may be photoresist. In this case, the photoresist may be a positive resist. Examples of positive resists include iP5700, PMER-P-LA900PM, and PMER-P7100 manufactured by Tokyo Ohka Kogyo Co., Ltd., and NPR9700 manufactured by Nagase ChemteX.

[0112] The height T3 of the resist convex portions 371C, 372C is defined as the distance between the top of the resist convex portions 371C, 372C and the surface of the intermediate layer 50. The height T3 is greater than the thickness of the second layer 40. The height T3 may be, for example, 2.0 μm or more, 3.0 μm or more, or 4.0 μm or more. The thickness of the second layer 40 may be, for example, 7 μm or less, 12 μm or less, or 27 μm or less.

[0113] The sidewall surface of the resist protrusion 371C has a tapered surface 371Ca that narrows inward as it extends away from the intermediate layer 50. Specifically, the shape of the resist protrusion 371C as a whole may be a truncated pyramid or a truncated cone. The angle θ2 between the tapered surface 371Ca and the surface of the intermediate layer 50 may be the same as the angle θ1 between the tapered surface 42a of the second opening 41 and the third surface 401.

[0114] The resist pattern forming step includes, for example, a resist layer forming step, an exposure step, and a development step.

[0115] The resist layer forming step is a step of forming a resist layer on the intermediate layer 50. The resist layer forming step includes, for example, a step of applying a liquid resist to the intermediate layer 50. The resist layer forming step may include a step of heating the liquid resist on the intermediate layer 50. The resist layer is formed by drying the liquid resist.

[0116] In the exposure process, the resist layer is irradiated with light so that in a subsequent development process, the resist layer remains in the portions of the resist layer corresponding to the second opening 41 and the screw hole 20H, while the resist layer in other portions on the intermediate layer 50 is removed. Specifically, because the resist layer is a positive resist, light is irradiated onto the resist layer in the above-mentioned other portions on the intermediate layer 50. The light is, for example, i-line. The i-line is a spectral line of mercury having a wavelength of 365 nm.

[0117] After the exposure step, the resist layer is developed to obtain a plurality of resist convex portions 371C and 372C on the intermediate layer 50. The developer contains, for example, TMAH (tetramethylammonium hydroxide).

[0118] Next, the second layer formation process is carried out. Specifically, as shown in FIG. 14 , a plating process is performed on the intermediate layer 50 on which the resist convex portions 371C and 372C are formed. As a result, the second layer 40 is formed. In the second layer 40, second openings 41 and screw holes 40H are formed corresponding to the resist convex portions 371C and 372C. The screw holes 40H are portions of the screw holes 20H that extend within the second layer 40.

[0119] The plating process may be electrolytic plating. Specifically, a plating power source is connected to the intermediate layer 50, and the laminate including the first layer 30, the intermediate layer 50, and the resist convex portions 371C, 372C is immersed in a plating bath containing a plating solution. As a result, metal is deposited in the gaps between the resist convex portions 371C, 372C on the intermediate layer 50, forming the second layer 40. For example, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used.

[0120] 15, the resist convex portions 371C and 372C are removed. At this time, not only the resist convex portion 371C in the second opening 41 and the resist convex portion 372C in the screw hole 40H, but also the resist convex portions 372C in the screw holes 50H and 30H are removed. For example, the resist convex portions 371C and 372C may be removed by exposing and developing the resist convex portions 371C and 372C. The developer may contain, for example, TMAH (tetramethylammonium hydroxide). Alternatively, the resist convex portions 371C and 372C may be removed by bringing a resist processing liquid into contact with the resist convex portions 371C and 372C. The resist processing liquid may contain, for example, N-methyl-2-pyrrolidone.

[0121] 16, a resist layer 38 is formed partially on the first surface 301 of the first layer 30. In the resist layer 38, a resist opening 381 facing the first opening 31 is formed.

[0122] The resist layer 38 may be a photoresist. In this case, the resist layer 38 is formed on the first surface 301 by first coating the first surface 301 with a liquid resist material. After coating, a step of heating the resist layer 38 may be performed. Subsequently, a photolithography process is performed in which the resist layer 38 is exposed and developed. As a result, resist openings 381 can be formed in the resist layer 38.

[0123] Although not shown, the resist layer 38 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation process on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the second layer 40 are stacked on the first layer 30.

[0124] Next, as shown in FIG. 17 , a first layer processing step is performed in which the first layer 30 is etched from the first surface 301 side to form a first opening 31 in the first layer 30. The etching in the first layer processing step may be dry etching using an etching gas. The etching gas is an example of the etchant described above. Because the intermediate layer 50 is resistant to the etchant, as shown in FIG. 17 , the etching can be prevented from progressing to the second layer 40. The etching step to form the first opening 31 may be deep reactive ion etching.

[0125] After the holes reach the intermediate layer 50, a step of removing the resist layer 38 may be carried out. For example, a resist processing liquid is supplied to the first surface 301. When the resist layer 38 is a photoresist, the resist processing liquid contains, for example, N-methyl-2-pyrrolidone. The resist layer 38 may be removed by irradiating the resist layer 38 with oxygen plasma. When the resist layer 38 is a silicon oxide film, the resist processing liquid contains, for example, hydrofluoric acid. CF ４ The resist layer 38 may be removed by dry etching using gas or the like.

[0126] After the first layer processing step, a step of removing the intermediate layer 50 may be performed. For example, an etchant for the intermediate layer 50 is supplied to the first opening 31. As a result, as shown in FIG. 18 , the intermediate layer 50 that overlaps the first opening 31 in plan view can be removed. The etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or wet etching using an acidic etching solution.

[0127] The order of the step of removing the resist layer 38 and the step of removing the intermediate layer 50 is not particularly limited, and these steps may be performed simultaneously.

[0128] Next, a method for manufacturing the frame 60 will be described. First, a plate-shaped member containing the above-mentioned glass material or metal material is prepared, and the plate-shaped member is cut to produce the frame 60 having the third opening 61 and the screw hole 60H. A drill, a cutting tool, a milling cutter, an end mill, or the like can be used as a cutting tool for cutting the plate-shaped member.

[0129] After the mask 20 and the frame 60 are fabricated, an attachment process is performed to attach the frame 60 to the mask 20. Specifically, as shown in FIG. 21 , a buffer material 75 is circumferentially arranged on the fifth surface 601 of the frame 60 along the edge of the third opening 61. The buffer material 75 has through holes 75H formed therein that face the screw holes 60H. Next, the buffer material 75 is oriented so that it faces the incident surface 201 of the mask 20, and the mask 20 is placed on the buffer material 75. At this time, the mask 20 is positioned relative to the frame 60 using the screw holes 60H of the frame 60 and / or the through holes 75H of the buffer material 75 and the screw holes 20H of the mask 20. Then, screws 70 are inserted through the screw holes 20H, the through holes 75H, and the screw holes 60H from the mask 20 side, and the mask 20 is fastened to the frame 60 as shown in FIG. 5A . Through these processes, the mask device 15 is fabricated.

[0130] Next, an example of a method for manufacturing the organic device 100 using the mask device 15 will be described.

[0131] First, a substrate 110 on which a first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum film deposition method or the like, and then patterning the conductive layer by a photolithography method or the like. The patterning of the conductive layer may be performed using an apparatus for performing a semiconductor manufacturing process. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0132] Next, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, etc. is formed on the first electrode 120. For example, first, a mask device 15 including a first mask 20 is placed in the vapor deposition device 10, and the first organic layer 130A is formed by vapor deposition using the first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, a mask device 15 including a second mask 20 is placed in the vapor deposition device 10, and the second organic layer 130B is formed by vapor deposition using the second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, a mask device 15 including a third mask 20 is placed in the vapor deposition device 10, and a third organic layer is formed by vapor deposition using the third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer. When the mask device 15 is installed in the vapor deposition apparatus 10 or removed from the vapor deposition apparatus 10, the frame 60 is grasped. This reduces the risk of the first layer 30 being damaged or the second layer 40 being deformed. Furthermore, within the vapor deposition apparatus 10, the frame 60 is supported by the mask holder 9. This reduces the risk of the mask holder 9 interfering with the first opening 31 of the first layer 30 or the second opening 41 of the second layer 40. In other words, this reduces the risk that the mask holder 9 will interfere with the deposition material adhering to the substrate 110.

[0133] Next, the second electrode 140 is formed on the organic layer 130. For example, as shown in FIG. 1 , the second electrode 140 may be formed over the entire first surface 111 by a vacuum film formation method or the like. Alternatively, although not shown, the second electrode 140 may be formed by a vapor deposition method using a mask 20, similar to the organic layer 130. Thereafter, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this manner, the organic device 100 can be obtained.

[0134] A plurality of organic devices 100 may be formed on one substrate 110. One organic device 100 may correspond to one first opening 31 of the mask 20. In this case, a step of cutting the substrate 110 may be performed. For example, the substrate 110 is cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. As a result, a plurality of organic devices 100 can be obtained.

[0135] The effect of the mask 20 when forming the organic layer 130, the second electrode 140, etc. by vapor deposition using the mask 20 will be described.

[0136] The mask 20 includes a first layer 30 containing silicon or a silicon compound. Therefore, when the substrate 110 contains silicon, it is possible to suppress the difference between the thermal expansion of the substrate 110 and the thermal expansion of the mask 20. This prevents the accuracy of the positions, shapes, etc. of the deposited layers, such as the organic layer 130 and the second electrode 140, from being reduced due to the thermal expansion of the mask 20. This makes it possible to provide an organic device 100 with a high element density.

[0137] The mask 20 includes a second layer 40 including a plurality of second openings 41. By providing the second layer 40 separately from the first layer 30, the thickness of the second layer 40 can be reduced, thereby suppressing the occurrence of shadows during the vapor deposition process. Furthermore, by appropriately ensuring the distance S6 between the first wall surface 32 and the second openings 41 in a plan view, the thickness of the first layer 30 can be appropriately ensured while suppressing shadows.

[0138] The above-described embodiment can be modified in various ways. Below, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in modified examples, the description of those effects may be omitted.

[0139] For example, the mask 20 may not include the intermediate layer 50 between the first layer 30 and the second layer 40. In this case, the second surface 302 of the first layer 30 and the third surface 401 of the second layer 40 may be directly connected to each other.

[0140] 22, the buffer material 75 may be disposed between the tip of the leg 72 of the screw 70 and the frame 60. In this case, the risk of the frame 60 being damaged by the stress applied to the frame 60 from the screw 70 is reduced.

[0141] 23 , a step portion 65 may be provided on the inner periphery of the frame 60. The step portion 65 is recessed in a direction from the fifth surface 601 toward the sixth surface 602. The step portion 65 is formed by a surface 651 that extends from the inner edge 604 of the frame 60 toward the outer edge 603, and a surface 652 that connects the surface 651 to the fifth surface 601. The surface 651 constitutes a part of the fifth surface 601. The surface 652 connects the remaining part of the fifth surface 601 to the surface 651. The surface 652 constitutes a part of the inner surface of the frame 60. In this case, at least a part of the mask 20 may be received in the step portion 65, more specifically, in the space defined by the surfaces 651 and 652. In this case, the outer edge of the mask 20 is surrounded by the frame 60. As a result, the risk of damage to the outer region 25 of the mask 20 (particularly the outer region 35 of the first layer 30) is more effectively suppressed.

[0142] When at least a portion of the mask 20 is received in the stepped portion 65 of the frame 60, it is desirable that the exit surface 202 of the mask 20 be flush with or protrude from the fifth surface 601 of the frame 60. In this case, when a deposition layer is formed on the substrate 110 or a component on the substrate 110 through the mask 20, the exit surface 202 of the mask 20 can be brought into contact with the substrate 110 or a component on the substrate 110.

[0143] 24 is a diagram showing an example of an apparatus 200 including an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal may be smart glasses, a head-mounted display, or the like.

[0144] The mask device 15 according to the embodiment described above includes a mask 20 and a frame 60 connected to the mask 20. The mask 20 includes a first layer 30 and a second layer 40. The first layer 30 includes a first surface 301, a second surface 302 located opposite the first surface 301, at least one first opening 31 penetrating from the first surface 301 to the second surface 302, an outer edge 303, and an outer region 35 located between the outer edge 303 and the first opening 31 in a plan view. The second layer 40 includes a third surface 401 facing the second surface 302, a fourth surface 402 located opposite the third surface 401, and a plurality of second openings 41 penetrating from the third surface 401 to the fourth surface 402 and overlapping the first opening 31 in a plan view. The frame 60 faces the first surface 301 of the outer region 35 of the first layer 30. In a plan view, at least a portion of the frame 60 extends beyond the outer edge 303 of the first layer 30. The mask 20 is fixed to the frame 60 with screws 70. In this case, the frame 60 can be gripped when handling the mask 20, thereby reducing the risk of damage to the mask 20. As a result, the mask 20 is easier to handle. Furthermore, since the mask 20 can be easily fixed to the frame 60, the mask device 15 can be easily manufactured.

[0145] It is also possible to combine the multiple components disclosed in the above-described embodiments and modifications as needed, or to delete some of the components disclosed in the above-described embodiments and modifications.

Claims

1. A mask device comprising a mask and a frame connected to the mask, wherein the mask includes a first layer including a first surface, a second surface located on the opposite side of the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a plan view, a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, the frame faces the first surface of the outer region of the first layer, and in a plan view, at least a part of the frame extends outside the outer edge of the first layer, and the mask is fixed to the frame by screws.

2. The mask device according to claim 1, wherein the first layer includes silicon or a silicon compound, and the frame includes glass or metal.

3. The mask device according to claim 1, further comprising a buffer material between the mask and the frame.

4. The mask device according to claim 1, wherein the mask and the frame are arranged in this order in a direction from the head to the leg of the screw, and a buffer material is provided between the tip of the leg of the screw and the frame.

5. The mask device according to claim 1, wherein the mask and the frame are arranged in this order in a direction from the head to the leg of the screw, and the top surface of the head of the screw is flush with the fourth surface of the second layer or is located between the fourth surface and the first surface of the first layer.

6. The mask device according to claim 1, wherein the mask is fixed to the frame by two or more screws.

7. The mask device according to claim 1, wherein the mask is fixed to the frame by one or more pairs of screws each of which sandwiches the plurality of second openings in a plan view.

8. The mask device according to claim 1, wherein a step portion for receiving at least a part of the mask is formed in the frame.

9. The mask device according to claim 1, wherein the mask is detachably fixed to the frame.

10. The mask device according to claim 1, wherein the screw is made of the same material as the frame.

11. A method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by a vapor deposition method using the mask device according to any one of claims 1 to 10.

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