Semiconductor element and semiconductor device

Abstract

This semiconductor element includes a body, a first electrode, and a first protective film. The first protective film covers the body and a section of the first electrode. The first protective film includes a first opening that penetrates in a first direction and exposes the first electrode. When viewed in the first direction, the circumferential edge of the first opening includes: a first edge and a second edge respectively extending in two directions orthogonal to the first direction; and a first connection edge connected to the first edge and the second edge. The length of the second edge is less than the length of the first edge. The first connection edge is curved. The radius of curvature of the first connecting edge is 20% or more of the length of the first edge.

Description

Semiconductor element and semiconductor device

[0001] The present disclosure relates to a semiconductor element and a semiconductor device on which the semiconductor element is mounted.

[0002] Patent Document 1 discloses an example of a semiconductor element (referred to as a semiconductor device in Patent Document 1). The semiconductor element includes a substrate having an element formation surface, pad terminals provided on the element formation surface, a passivation film covering a portion of the pad terminal and the element formation surface, Cu rewiring extending from the pad terminal, an organic coating covering the Cu rewiring, and a resin film covering the organic coating. The surface of the Cu rewiring includes a roughened surface that has been roughened. The organic coating is in contact with the roughened surface. This configuration allows the organic coating to exhibit an anchoring effect with respect to the Cu rewiring. Furthermore, since the organic coating has a relatively strong affinity with the resin film, the adhesive strength of the resin film to the organic coating is stronger. This makes it possible to suppress peeling of the resin film from the Cu rewiring layer.

[0003] When the semiconductor element disclosed in Patent Document 1 is used, heat is conducted from the element formation surface to the pad terminals. This causes repeated thermal stress to act on the passivation film located near the pad terminals. This may cause cracks in the passivation film.

[0004] Japanese Patent Application Laid-Open No. 2014-165335

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor element that can suppress the occurrence of cracks in a first protective film.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a body including a semiconductor layer, a first electrode located on one side of the body in a first direction and conductive to the semiconductor layer, and a first protective film located on the same side of the body as the first electrode. The first protective film covers a portion of the first electrode and the body. The first protective film has a first opening penetrating in the first direction and exposing the first electrode. When viewed in the first direction, the periphery of the first opening includes a first edge and a second edge extending in a direction perpendicular to the first direction, and a first connecting edge connecting the first edge and the second edge. The extending direction of the second edge is different from the extending direction of the first edge. The length of the second edge is equal to or shorter than the length of the first edge. The first connecting edge is curved. The radius of curvature of the first connecting edge is 20% or more of the length of the first edge.

[0007] A semiconductor device according to a second aspect of the present disclosure includes the semiconductor element according to the first aspect of the present disclosure and a substrate including a conductive portion. The semiconductor element further includes a second electrode, a second protective film, and a rewiring. The semiconductor element is mounted on the substrate. The rewiring is electrically connected to the conductive portion.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor element according to a first embodiment of the present disclosure. FIG. 2 is a partially enlarged view of FIG. 1, omitting illustration of a second protective film, a third protective film, and multiple rewirings, and showing multiple terminals and multiple bonding layers. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. FIG. 5 is a partially enlarged view of FIG. 2, omitting illustration of multiple terminals and multiple bonding layers. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 5. FIG. 7 is a cross-sectional view of a semiconductor device equipped with the semiconductor element shown in FIG. 1. FIG. 8 is a partially enlarged plan view of a semiconductor element according to a second embodiment of the present disclosure, corresponding to FIG. 5. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 8. FIG. 10 is a partially enlarged plan view of a semiconductor element according to a third embodiment of the present disclosure, corresponding to FIG. 5. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. Fig. 12 is a partially enlarged plan view of a semiconductor device according to a fourth embodiment of the present disclosure, and corresponds to Fig. 5. Fig. 13 is a cross-sectional view taken along line XIII-XIII in Fig. 12.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 6. The semiconductor device A10 is a large-scale integration (LSI) known as a wafer-level-chip size package (WL-CSP). The semiconductor device A10 includes a main body 11, multiple electrodes 12, a first protective film 20, a second protective film 31, a third protective film 32, multiple rewirings 40, multiple terminals 50, and multiple bonding layers 60. For ease of understanding, FIG. 2 omits the illustration of the second protective film 31, the third protective film 32, and the multiple rewirings 40, and shows the multiple terminals 50 and the multiple bonding layers 60 in a transparent manner. The multiple terminals 50 and the multiple bonding layers 60 shown in FIG. 2 are indicated by imaginary lines (double-dashed lines). For ease of understanding, FIG. 5 omits the illustration of the multiple terminals 50 and the multiple bonding layers 60 compared to FIG. 2.

[0012] In the description of the semiconductor element A10 and the semiconductor device B described later, for convenience, the normal direction to the main surface 11A of the body 11 described later will be referred to as the "first direction z." The direction perpendicular to the first direction z will be referred to as the "second direction x." The direction perpendicular to each of the first direction z and the second direction x will be referred to as the "third direction y."

[0013] 3 and 4 , the main body 11 includes a semiconductor substrate 111 and a semiconductor layer 112 located on one side of the semiconductor substrate 111 in the first direction z. The main body 11 has a main surface 11A facing one side of the first direction z. The semiconductor layer 112 includes the main surface 11A. The semiconductor substrate 111 is obtained from, for example, a silicon wafer. Various semiconductor circuits such as transistors and diodes are configured on and near the main surface 11A of the semiconductor layer 112.

[0014] As shown in FIGS. 3 and 4 , the multiple electrodes 12 are located on one side of the main body 11 in the first direction z. The multiple electrodes 12 are in contact with the main surface 11A of the main body 11. The multiple electrodes 12 are electrically connected to various semiconductor circuits configured in the semiconductor layer 112. The multiple electrodes 12 include, for example, aluminum (Al). The configurations, such as the arrangement and shape, of the multiple electrodes 12 in this disclosure are merely exemplary. As shown in FIG. 1 , the multiple electrodes 12 include a first electrode 12A, a second electrode 12B, and a third electrode 12C. Each of the first electrode 12A, the second electrode 12B, and the third electrode 12C extends in the third direction y. The first electrode 12A, the second electrode 12B, and the third electrode 12C are arranged along the second direction x. The second electrode 12B is located adjacent to the first electrode 12A in the second direction x. The third electrode 12C is located on the opposite side of the first electrode 12A with the second electrode 12B interposed therebetween.

[0015] 3, 4, and 6, the first electrode 12A has a connection surface 121 and an end surface 122. The connection surface 121 faces the same side as the main surface 11A of the body 11 in the first direction z. A portion of the connection surface 121 is covered with a first protective film 20. The end surface 122 faces the second electrode 12B. The end surface 122 faces the second direction x and is perpendicular to the connection surface 121. The end surface 122 is covered with the first protective film 20.

[0016] 2, 3, and 4, the first protective film 20 covers the main surface 11A of the main body 11 and a portion of each of the plurality of electrodes 12. The first protective film 20 is a thin film containing silicon dioxide (SiO) or silicon nitride (SiN), or a laminate of these thin films.

[0017] 2, 3, and 4, the first protective film 20 has a first opening 21 and a second opening 22. The first opening 21 and the second opening 22 each penetrate in the first direction z. The connection surface 121 of the first electrode 12A is exposed from the first opening 21. As viewed in the first direction z, the first opening 21 is located inward from the periphery of the connection surface 121. The second electrode 12B is exposed from the second opening 22. As viewed in the first direction z, the second opening 22 is located inward from the periphery of the second electrode 12B.

[0018] As shown in FIG. 5 , when viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, a third edge 213, a first connecting edge 214, and a second connecting edge 215. The first edge 211 extends in the third direction y. The second edge 212 and the third edge 213 each extend in the second direction x. Therefore, the direction in which the second edge 212 and the third edge 213 each extend is different from the direction in which the first edge 211 extends. The third edge 213 is located on the opposite side of the first edge 211 from the second edge 212. The lengths L2 and L3 of the second edge 212 and the third edge 213 are each less than the length L1 of the first edge 211. In the semiconductor element A10, the lengths L2 and L3 are each less than the length L1.

[0019] 5 , the first connecting edge 214 connects the first edge 211 and the second edge 212. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is 20% or more of the length L1 of the first edge 211. When viewed in the first direction z, the first connecting edge 214 is spaced apart from the extension line of the first edge 211 and the extension line of the second edge 212.

[0020] 5 , the second connecting edge 215 connects the first edge 211 and the third edge 213. The second connecting edge 215 is curved. The radius of curvature r2 of the second connecting edge 215 is 20% or more of the length L1 of the first edge 211. In the semiconductor element A10, the radius of curvature r2 is equal to the radius of curvature r1 of the first connecting edge 214. When viewed in the first direction z, the second connecting edge 215 is spaced apart from the extension line of the first edge 211 and the extension line of the third edge 213.

[0021] 5 and 6 , the first protective film 20 has a covering portion 23. The covering portion 23 is located between the first opening 21 and the second electrode 12B in the second direction x. The covering portion 23 defines the first opening 21. The covering portion 23 covers the connection surface 121 of the first electrode 12A. When viewed in the first direction z, the entire covering portion 23 overlaps the connection surface 121.

[0022] As shown in FIG. 6 , the covering portion 23 has a first surface 231 and a second surface 232. The first surface 231 faces the connection surface 121 of the first electrode 12A. The first surface 231 is in contact with the connection surface 121. The first surface 231 includes the periphery of the first opening 21, such as the first edge 211 described above. The dimension of the first surface 231 in the second direction x is 30% or more of the length L1 of the first edge 211. Furthermore, the dimension of the first opening 21 in the second direction x is greater than the gap G between the first electrode 12A and the second electrode 12B. The second surface 232 faces the opposite side of the first surface 231 in the first direction z. Therefore, the second surface 232 faces the same side as the main surface 11A of the main body 11 in the first direction z. The dimension of the second surface 232 in the second direction x is equal to the dimension of the first surface 231 in the second direction x.

[0023] 5 and 6 , the first protective film 20 has a groove 24. The groove 24 is recessed in the first direction z from the side facing the main surface 11A of the main body 11. The groove 24 extends in the third direction y. As viewed in the first direction z, the groove 24 overlaps with the gap G between the first electrode 12A and the second electrode 12B.

[0024] 6 , the first protective film 20 has an inner surface 241 that defines the groove portion 24. The inner surface 241 overlaps the covering portion 23 when viewed in the second direction x. The inner surface 241 is inclined with respect to the second surface 232 of the covering portion 23.

[0025] As shown in FIG. 2 , the first protective film 20 has a plurality of recesses 25. Each of the recesses 25 is recessed in the first direction z toward the side where the plurality of electrodes 12 are located. As viewed in the first direction z, each of the plurality of recesses 25 overlaps one of the plurality of electrodes 12. As shown in FIG. 2 , as viewed in the first direction z, each of the plurality of recesses 25 overlaps one of the first electrode 12A, the second electrode 12B, and the third electrode 12C. As viewed in the first direction z, each of the plurality of recesses 25 has a circular shape. As shown in FIGS. 5 and 6 , one of the plurality of recesses 25 is formed in the covering portion 23.

[0026] As shown in FIGS. 3 and 4 , the second protective film 31 is located between the main body 11 and the third protective film 32 in the first direction z. The second protective film 31 covers a portion of each of the plurality of electrodes 12 and the first protective film 20. The second protective film 31 is an insulator containing an organic compound. The second protective film 31 is made of a material containing polyimide. The second protective film 31 includes a portion located between the first protective film 20 and the plurality of rewirings 40. As shown in FIGS. 3 , 4 , and 6 , the second protective film 31 is accommodated in each of the first openings 21 and the second openings 22 of the first protective film 20 and includes a portion in contact with the first protective film 20. The second protective film 31 recesses into the grooves 24 and the plurality of recesses 25 of the first protective film 20.

[0027] As shown in Figures 3 and 4, the multiple rewirings 40 are located on the opposite side of the main body 11 from the multiple electrodes 12 in the first direction z. Each of the multiple rewirings 40 is electrically connected to one of the multiple electrodes 12. Each of the multiple rewirings 40 includes a barrier layer in contact with at least one of the multiple electrodes 12 and the second protective film 31, a seed layer stacked on the barrier layer, and a plating layer stacked on the seed layer. The barrier layer contains titanium (Ti). The seed layer and the plating layer each contain copper (Cu).

[0028] As shown in FIGS. 3 and 4 , each of the multiple rewirings 40 has a main portion 41, a contact portion 42, and a recessed portion 43. The contact portion 42 is electrically connected to one of the first electrode 12A, the second electrode 12B, and the third electrode 12C. A portion of the contact portion 42 is accommodated in one of the first opening 21 and the second opening 22 of the first protective film 20 and is in contact with the second protective film 31. The main portion 41 is connected to the contact portion 42. The main portion 41 is sandwiched between the second protective film 31 and the third protective film 32. The recessed portion 43 is recessed from the main portion 41 in the first direction z. When viewed in the first direction z, the recessed portion 43 overlaps the contact portion 42. The third protective film 32 is recessed into the recessed portion 43.

[0029] As shown in FIGS. 3 and 4 , the third protective film 32 covers the second protective film 31 and the plurality of rewirings 40. The third protective film 32 is an insulator containing an organic compound. The third protective film 32 is made of a material containing polyimide. In the semiconductor element A10, the composition of the third protective film 32 is the same as the composition of the second protective film 31. The third protective film 32 is in contact with the plurality of terminals 50. The dimension of the third protective film 32 in the first direction z is larger than the dimension of the second protective film 31 in the first direction z.

[0030] As shown in FIG. 3 , each of the multiple terminals 50 is located on the opposite side of the multiple electrodes 12 in the first direction z with respect to the multiple rewirings 40. Each of the multiple terminals 50 is electrically connected to the main portion 41 of one of the multiple rewirings 40. The multiple terminals 50 are exposed from the third protective film 32. In the semiconductor element A10, a portion of each of the multiple terminals 50 protrudes from the third protective film 32 in the first direction z. The multiple terminals 50 contain copper. As shown in FIG. 1 , in the semiconductor element A10, the multiple terminals 50 are arranged in a lattice pattern when viewed in the first direction z.

[0031] As shown in FIG. 3 , the multiple bonding layers 60 are located on the opposite side of the multiple rewirings 40 relative to the multiple terminals 50 in the first direction z. The multiple bonding layers 60 are individually and electrically connected to the multiple terminals 50. The multiple bonding layers 60 are solder. Therefore, the composition of the multiple bonding layers 60 includes tin. The melting point of the multiple bonding layers 60 is lower than the melting point of the multiple terminals 50.

[0032] Next, a semiconductor device B on which the semiconductor element A10 is mounted will be described with reference to FIG.

[0033] As shown in FIG. 7 , the semiconductor device B includes a semiconductor element A10 and a base material 71. The semiconductor element A10 is mounted on the base material 71. The base material 71 includes a substrate 711 and a conductive portion 712. The substrate 711 is an insulator. The conductive portion 712 includes, for example, copper. The multiple bonding layers 60 of the semiconductor element A10 are conductively bonded to the conductive portion 712. Therefore, the multiple rewirings 40 of the semiconductor element A10 are electrically connected to the conductive portion 712 via the multiple terminals 50 and the multiple bonding layers 60.

[0034] In the semiconductor device B, the base material 71 is a wiring board. Alternatively, the base material 71 may be configured to include only the conductive portion 712, which is a lead. Furthermore, the base material 71 may be configured to include an external terminal located on the opposite side of the conductive portion 712 from the substrate 711 in the first direction z. In the semiconductor device B, the semiconductor element A10 may be covered with a sealing resin such as underfill.

[0035] Next, the effects of the semiconductor element A10 will be described.

[0036] The semiconductor device A10 includes a main body 11, a first electrode 12A, and a first protective film 20. The first protective film 20 has a first opening 21 penetrating in a first direction z and exposing the first electrode 12A. When viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, and a first connecting edge 214. The second edge 212 extends in a direction different from the first edge 211. The length L2 of the second edge 212 is equal to or shorter than the length L1 of the first edge 211. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is equal to or greater than 20% of the length L1. During use of the semiconductor device A10, thermal stress due to heat conducted from the main body 11 to the first electrode 12A acts on the first protective film 20. This configuration reduces the concentration of thermal stress acting on the periphery of the first opening 21. Therefore, this configuration makes it possible to suppress the occurrence of cracks in the first protective film 20 in the semiconductor element A10.

[0037] In addition to the above configuration, when viewed in the first direction z, the periphery of the first opening 21 includes a third edge 213 and a second connecting edge 215. The direction in which the third edge 213 extends is the same as the direction in which the second edge 212 extends. The length L3 of the third edge 213 is equal to or shorter than the length L1 of the first edge 211. The second connecting edge 215 is curved. The radius of curvature r2 of the second connecting edge 215 is equal to or greater than 20% of the length L1. This configuration effectively reduces the concentration of thermal stress acting on the periphery of the first opening 21.

[0038] When viewed in the first direction z, the first opening 21 is located inward from the periphery of the first electrode 12A. By adopting this configuration, the distribution of thermal stress acting on the periphery of the first opening 21 becomes more uniform.

[0039] The semiconductor element A10 further includes a second electrode 12B located adjacent to the first electrode 12A in the second direction x. The first protective film 20 is located between the first opening 21 and the second electrode 12B in the second direction x and includes a covering portion 23 that defines the first opening 21. The covering portion 23 has a first surface 231 facing the connection surface 121 of the first electrode 12A. The dimension of the first surface 231 in the second direction x is 30% or more of the length L1 of the first edge 211. This configuration further increases the contact area of ​​the covering portion 23 with the first electrode 12A. This effectively reduces thermal stress acting on the interface between the first electrode 12A and the covering portion 23.

[0040] In the above configuration, the dimension of the first surface 231 in the second direction x is preferably larger than the gap G between the first electrode 12A and the second electrode 12B.

[0041] The first protective film 20 has a recess 25 recessed in the first direction z toward the side where the first electrode 12A is located. When viewed in the first direction z, the recess 25 is circular. The semiconductor element A10 further includes a second protective film 31 covering the first protective film 20. The second protective film 31 is recessed into the recess 25. With this configuration, the second protective film 31 exhibits an anchoring effect with respect to the first protective film 20. This suppresses peeling of the second protective film 31 from the first protective film 20. Furthermore, concentration of thermal stress near the recess 25 in the first protective film 20 is reduced. In the first protective film 20, the covering portion 23 is a region where thermal stress is relatively likely to concentrate, so it is preferable that the recess 25 be formed in the covering portion 23.

[0042] The first protective film 20 has a groove 24 that is recessed from the side opposite to the side facing the main body 11 in the first direction z and extends in the third direction y. As viewed in the first direction z, the groove 24 overlaps the gap G between the first electrode 12A and the second electrode 12B. The second protective film 31 is recessed into the groove 24. This configuration can increase the anchoring effect of the second protective film 31 relative to the first protective film 20 while suppressing a reduction in the dimension in the first direction z of each portion of the first protective film 20 that individually covers the first electrode 12A and the second electrode 12B. This more effectively suppresses peeling of the second protective film 31 relative to the first protective film 20.

[0043] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 8 and 9. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and redundant description will be omitted. For ease of understanding, Figure 8 omits the illustration of the second protective film 31, the third protective film 32, the rewirings 40, the terminals 50, and the bonding layers 60. Figure 8 corresponds to Figure 5, which shows the semiconductor device A10.

[0044] In the semiconductor element A20, the configuration of the first electrode 12A is different from that of the semiconductor element A10.

[0045] 8 and 9 , the end surface 122 of the first electrode 12A is inclined with respect to the second direction x. The end surface 122 is inclined in the first direction z from the connection surface 121 of the first electrode 12A to the main surface 11A of the body 11 in a direction approaching the second electrode 12B.

[0046] Next, the effects of the semiconductor element A20 will be described.

[0047] The semiconductor element A20 includes a body 11, a first electrode 12A, and a first protective film 20. The first protective film 20 has a first opening 21 penetrating in the first direction z and exposing the first electrode 12A. When viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, and a first connecting edge 214. The second edge 212 extends in a direction different from the first edge 211. The length L2 of the second edge 212 is equal to or shorter than the length L1 of the first edge 211. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is equal to or greater than 20% of the length L1. Therefore, with this configuration, the occurrence of cracks in the first protective film 20 can be suppressed even in the semiconductor element A20. Furthermore, the semiconductor element A20 has the same configuration as the semiconductor element A10, and thus exhibits the same effects as the semiconductor element A10.

[0048] In the semiconductor element A20, the end face 122 of the first electrode 12A is inclined with respect to the second direction x. The end face 122 is inclined in the first direction z from the connection surface 121 of the first electrode 12A toward the main body 11 toward the second electrode 12B. This configuration further increases the contact area of ​​the first protective film 20 with the first electrode 12A. This effectively reduces thermal stress acting on the interface between the first electrode 12A and the first protective film 20.

[0049] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 10 and 11. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and redundant description will be omitted. For ease of understanding, Figure 10 omits the illustration of the second protective film 31, the third protective film 32, the rewirings 40, the terminals 50, and the bonding layers 60. Figure 10 corresponds to Figure 5, which shows the semiconductor device A10.

[0050] In the semiconductor element A30, the configuration of the first protective film 20 is different from that of the semiconductor element A20 described above.

[0051] As shown in FIGS. 10 and 11, in a cross section (cross section shown in FIG. 11) in which the first direction z and the second direction x are in-plane directions, an inner surface 241 defining the groove portion 24 is convex.

[0052] Next, the effects of the semiconductor element A30 will be described.

[0053] The semiconductor element A30 includes a body 11, a first electrode 12A, and a first protective film 20. The first protective film 20 has a first opening 21 penetrating in the first direction z and exposing the first electrode 12A. As viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, and a first connecting edge 214. The second edge 212 extends in a direction different from the first edge 211. The length L2 of the second edge 212 is equal to or shorter than the length L1 of the first edge 211. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is equal to or greater than 20% of the length L1. Therefore, with this configuration, the occurrence of cracks in the first protective film 20 can be suppressed even in the semiconductor element A30. Furthermore, the semiconductor element A30 has the same configuration as the semiconductor element A10, and thus exhibits the same effects as the semiconductor element A10.

[0054] In the semiconductor element A30, in a cross section (see FIG. 11 ) in which the first direction z and the second direction x are in-plane directions, the inner surface 241 defining the groove portion 24 is convex. This configuration allows the thermal stress transmitted from the second surface 232 of the covering portion 23 to flow more smoothly in the first protective film 20. This effectively reduces the thermal stress acting on the interface between the first protective film 20 and the outside.

[0055] Fourth Embodiment: A semiconductor element A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 12 and 13. In these figures, elements that are the same as or similar to those in the semiconductor element A10 described above are designated by the same reference numerals, and redundant description will be omitted. For ease of understanding, Figure 12 omits the illustration of the second protective film 31, the third protective film 32, the rewirings 40, the terminals 50, and the bonding layers 60. Figure 12 corresponds to Figure 5, which shows the semiconductor element A10.

[0056] In the semiconductor element A40, the configuration of the first protective film 20 is different from that of the semiconductor element A30 described above.

[0057] 12 and 13 , the covering portion 23 of the first protective film 20 has a third surface 233. The third surface 233 faces the same side as the second surface 232 in the first direction z and is located between the first surface 231 and the second surface 232 in the first direction z. The third surface 233 is accommodated in the first opening 21 of the first protective film 20. The third surface 233 is in contact with the second protective film 31. The dimension of the third surface 233 in the second direction x is smaller than the dimension of the second surface 232 in the second direction x. Furthermore, the dimension of the second surface 232 in the second direction x is smaller than the dimension of the first surface 231 in the second direction x.

[0058] Next, the effects of the semiconductor element A40 will be described.

[0059] The semiconductor element A40 includes a body 11, a first electrode 12A, and a first protective film 20. The first protective film 20 has a first opening 21 penetrating in the first direction z and exposing the first electrode 12A. As viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, and a first connecting edge 214. The second edge 212 extends in a direction different from the first edge 211. The length L2 of the second edge 212 is equal to or shorter than the length L1 of the first edge 211. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is equal to or greater than 20% of the length L1. Therefore, with this configuration, the occurrence of cracks in the first protective film 20 can be suppressed even in the semiconductor element A40. Furthermore, the semiconductor element A40 has the same configuration as the semiconductor element A10, and thus exhibits the same effects as the semiconductor element A10.

[0060] In the semiconductor element A40, the covering portion 23 of the first protective film 20 has a third surface 233. The third surface 233 is housed in the first opening 21 of the first protective film 20. The dimension of the third surface 233 in the second direction x is smaller than the dimension of the second surface 232 in the second direction x. Furthermore, the dimension of the second surface 232 in the second direction x is smaller than the dimension of the first surface 231 in the second direction x. With this configuration, the second protective film 31 contacts the third surface 233, thereby further increasing the anchoring effect of the second protective film 31 with respect to the first protective film 20. This more effectively suppresses peeling of the second protective film 31 from the first protective film 20.

[0061] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0062] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a body including a semiconductor layer; a first electrode located on one side of the body in a first direction and conductive to the semiconductor layer; and a first protective film located on the same side of the body as the first electrode and covering a portion of the first electrode and the body, wherein the first protective film has a first opening that penetrates in the first direction and exposes the first electrode, wherein, as viewed in the first direction, a periphery of the first opening includes first and second edges extending in a direction perpendicular to the first direction and a first connecting edge connecting the first and second edges, wherein the extending direction of the second edge is different from the extending direction of the first edge, the length of the second edge is equal to or less than the length of the first edge, the first connecting edge is curved, and the radius of curvature of the first connecting edge is 20% or more of the length of the first edge. Supplementary note 2. The semiconductor element according to Supplementary Note 1, wherein the direction in which the second edge extends is perpendicular to the direction in which the first edge extends.Supplementary Note 3. The semiconductor element according to Supplementary Note 2, wherein, when viewed in the first direction, the first connecting edge is spaced apart from an extension line of the first edge and an extension line of the second edge.Supplementary Note 4. The semiconductor element according to Supplementary Note 3, wherein, when viewed in the first direction, the periphery of the first opening includes a third edge located on the opposite side of the second edge with the first edge therebetween, and a second connecting edge connecting the first edge and the third edge, the direction in which the third edge extends is the same as the direction in which the second edge extends, the length of the third edge is equal to or less than the length of the first edge, the second connecting edge is curved, and the radius of curvature of the second connecting edge is 20% or more of the length of the first edge.Supplementary Note 5. The semiconductor element according to Supplementary Note 4, wherein the lengths of the second edge and the third edge are each shorter than the length of the first edge.Supplementary Note 6. The semiconductor element according to any one of claims 3 to 5, wherein the first opening is located inward from a periphery of the first electrode when viewed in the first direction. The semiconductor element according to claim 6, wherein the first protective film includes at least one of silicon dioxide and silicon nitride.Appendix 8. The semiconductor element according to Appendix 7, further comprising a second electrode located on the same side as the first electrode with respect to the main body and conducting to the semiconductor layer, wherein the first protective film covers a portion of the second electrode, the second electrode being located adjacent to the first electrode in a second direction orthogonal to the first direction, the first protective film being located between the first opening and the second electrode in the second direction and having a covering portion defining the first opening, the first electrode having a connection surface facing the side opposite to the side on which the main body is located in the first direction, the covering portion covering the connection surface, the covering portion having a first surface facing the connection surface and including a periphery of the first opening, and a dimension of the first surface in the second direction that is 30% or more of a length of the first edge. Appendix 9. The semiconductor element according to Appendix 8, wherein the dimension of the first surface in the second direction is greater than a gap between the first electrode and the second electrode in the second direction. Appendix 10. The semiconductor element according to Appendix 8, wherein the first protective film has a recess recessed toward a side where the first electrode is located in the first direction, and the recess overlaps the first electrode as viewed in the first direction. Appendix 11. The semiconductor element according to Appendix 10, wherein the recess is circular as viewed in the first direction. Appendix 12. The semiconductor element according to Appendix 11, wherein the recess is formed in the covering portion. Appendix 13. The semiconductor element according to Appendix 11, wherein the first protective film has a second opening that penetrates in the first direction and exposes the second electrode, and the second opening is located inward from a periphery of the second electrode as viewed in the first direction. Appendix 14. The semiconductor element according to Appendix 13, wherein the first protective film has a groove portion that is recessed from a side opposite to a side facing the main body in the first direction and extends in a third direction orthogonal to each of the first direction and the second direction, and the groove portion overlaps a gap between the first electrode and the second electrode as viewed in the first direction. Appendix 15. The semiconductor element according to Appendix 14, wherein the first protective film has an inner surface that defines the groove portion and overlaps the covering portion as viewed in the second direction, and the inner surface is convex in a cross section having the first direction and the second direction as in-plane directions.Appendix 16. The semiconductor element according to Appendix 15, wherein the covering portion has a second surface facing the opposite side to the first surface in the first direction, and wherein a dimension of the second surface in the second direction is smaller than a dimension of the first surface in the second direction. Appendix 17. The semiconductor element according to Appendix 16, wherein the covering portion has a third surface facing the same side as the second surface in the first direction and positioned between the first surface and the second surface in the first direction, the third surface being housed in the first opening, and wherein a dimension of the third surface in the second direction is smaller than a dimension of the second surface in the second direction. Appendix 18. Appendix 14: The semiconductor element according to Appendix 14, further comprising: a second protective film covering the first protective film; and a rewiring located on the opposite side of the main body with respect to the first electrode and the second electrode and electrically connected to either the first electrode or the second electrode, wherein the second protective film includes a portion located between the first protective film and the rewiring, and the rewiring includes a portion housed in either the first opening or the second opening. Appendix 19: The semiconductor element according to Appendix 18, wherein the second protective film is housed in each of the first opening and the second opening and includes a portion in contact with the first protective film. Appendix 20: A semiconductor device comprising: the semiconductor element according to Appendix 18; and a substrate including a conductive portion, wherein the semiconductor element is mounted on the substrate, and the rewiring is electrically connected to the conductive portion. Appendix 21: The semiconductor element according to Appendix 15, wherein the first electrode has an end face facing the second electrode, the end face is covered by the protective film, and the end face is inclined with respect to the second direction. Appendix 22. The semiconductor element according to Appendix 21, wherein the end surface is inclined in the first direction from the connection surface to the main body in a direction approaching the second electrode. Appendix 23. The semiconductor element according to Appendix 18, further comprising: a third protective film covering the second protective film and the rewiring; and a terminal located on the opposite side of the rewiring from the first electrode and the second electrode and electrically connected to the rewiring, wherein the third protective film is in contact with the terminal, and the terminal is exposed from the third protective film.Appendix 24. The semiconductor element according to Appendix 23, wherein a portion of the terminal protrudes from the third protective film in the first direction. Appendix 25. The semiconductor element according to Appendix 23, wherein each of the second protective film and the third protective film includes polyimide. Appendix 26. The semiconductor element according to Appendix 23, wherein the redistribution line has a main portion located between the second protective film and the third protective film and a contact portion connected to the main portion, the contact portion being electrically connected to the first electrode and in contact with the second protective film, and the terminal being electrically connected to the main portion. Appendix 27. The semiconductor element according to Appendix 26, wherein a portion of the contact portion is housed in the first opening. Appendix 28. The semiconductor element according to Appendix 27, wherein the redistribution line has a recessed portion recessed from the main portion in the first direction, the recessed portion overlapping the contact portion when viewed in the first direction, and the third protective film recessing into the recessed portion. Appendix 29. 25. The semiconductor element of claim 24, further comprising a bonding layer electrically connected to the terminal, the bonding layer being located on the opposite side of the terminal from the rewiring, and the melting point of the bonding layer being lower than the melting point of the terminal.

[0063] A10 to A40: semiconductor element B: semiconductor device 11: body 11A: main surface 111: semiconductor substrate 112: semiconductor layer 12: electrode 12A, 12B, 12C: first electrode, second electrode, third electrode 121: connection surface 122: end surface 20: first protective film 21: first opening 211, 212, 213: first edge, second edge, third edge 214, 215: first connecting edge, second connecting edge 22: second opening 23: covering portion 231, 232, 233: first surface, second surface, third surface 24: groove portion 241: inner surface 25: recess 31: second protective film 32: third protective film 40: rewiring 41: main portion 42: contact portion 43: recessed portion 50: terminal 60: Bonding layer 71: Base material 711: Substrate 712: Conductive part z, x, y: First direction, second direction, third direction

Claims

1. A semiconductor device comprising: a body including a semiconductor layer; a first electrode located on one side of the body in a first direction and electrically connected to the semiconductor layer; and a first protective film located on the same side as the first electrode with respect to the body and covering a part of the first electrode and the body, wherein the first protective film has a first opening that penetrates in the first direction and exposes the first electrode, and when viewed in the first direction, a periphery of the first opening includes a first edge and a second edge that respectively extend in two directions orthogonal to the first direction, and a first connecting edge connecting the first edge and the second edge, the direction in which the second edge extends is different from the direction in which the first edge extends, a length of the second edge is equal to or less than a length of the first edge, the first connecting edge is a curve, and a radius of curvature of the first connecting edge is 20% or more of the length of the first edge.

2. The semiconductor device according to claim 1, wherein the direction in which the second edge extends is orthogonal to the direction in which the first edge extends.

3. The semiconductor device according to claim 2, wherein when viewed in the first direction, the first connecting edge is away from an extension line of the first edge and an extension line of the second edge.

4. The semiconductor device according to claim 3, wherein when viewed in the first direction, a periphery of the first opening includes a third edge located on a side opposite to the second edge with the first edge interposed therebetween, and a second connecting edge connecting the first edge and the third edge, the direction in which the third edge extends is the same as the direction in which the second edge extends, a length of the third edge is equal to or less than a length of the first edge, the second connecting edge is a curve, and a radius of curvature of the second connecting edge is 20% or more of the length of the first edge.

5. The semiconductor device according to claim 4, wherein each of the lengths of the second edge and the third edge is smaller than the length of the first edge.

6. The semiconductor device according to any one of claims 3 to 5, wherein when viewed in the first direction, the first opening is located inward of a periphery of the first electrode.

7. The semiconductor device according to claim 6, wherein the first protective film includes at least one of silicon dioxide and silicon nitride.

8. Further comprising a second electrode that is located on the same side as the first electrode with respect to the main body and is electrically connected to the semiconductor layer, the first protective film covering a part of the second electrode, the second electrode being located adjacent to the first electrode in a second direction orthogonal to the first direction, the first protective film being located between the first opening and the second electrode in the second direction and having a covering portion that defines the first opening, the first electrode having a connection surface facing the side opposite to the side where the main body is located in the first direction, the covering portion covering the connection surface, the covering portion facing the connection surface and having a first surface including the periphery of the first opening, the semiconductor element according to claim 7, wherein the dimension of the first surface in the second direction is 30% or more of the length of the first edge.

9. The semiconductor element according to claim 8, wherein the dimension of the first surface in the second direction is larger than the gap between the first electrode and the second electrode in the second direction.

10. The first protective film has a recess that is recessed toward the side where the first electrode is located in the first direction, and when viewed in the first direction, the recess overlaps the first electrode. The semiconductor element according to claim 8.

11. The semiconductor element according to claim 10, wherein when viewed in the first direction, the recess is circular in shape.

12. The semiconductor element according to claim 11, wherein the recess is formed in the covering portion.

13. The first protective film has a second opening that penetrates in the first direction and exposes the second electrode, and when viewed in the first direction, the second opening is located inward of the periphery of the second electrode. The semiconductor element according to claim 11.

14. The first protective film has a groove portion that is recessed from the side opposite to the side facing the main body in the first direction and extends in a third direction orthogonal to each of the first direction and the second direction, and when viewed in the first direction, the groove portion overlaps the gap between the first electrode and the second electrode. The semiconductor element according to claim 13.

15. The first protective film defines the groove portion and has an inner surface that overlaps the covering portion when viewed in the second direction, and in a cross section having the first direction and the second direction as in-plane directions, the inner surface is convex. The semiconductor element according to claim 14.

16. The covered portion has a second surface facing the side opposite to the first surface in the first direction, and the dimension of the second surface in the second direction is smaller than the dimension of the first surface in the second direction. The semiconductor device according to claim 15.

17. The covered portion has a third surface facing the same side as the second surface in the first direction and located between the first surface and the second surface in the first direction. The third surface is accommodated in the first opening, and the dimension of the third surface in the second direction is smaller than the dimension of the second surface in the second direction. The semiconductor device according to claim 16.

18. A second protective film covering the first protective film, and a rewiring located on the side opposite to the main body with reference to the first electrode and the second electrode and electrically connected to either the first electrode or the second electrode. The second protective film includes a portion located between the first protective film and the rewiring, and the rewiring includes a portion accommodated in either the first opening or the second opening. The semiconductor device according to claim 14.

19. The second protective film is accommodated in each of the first opening and the second opening and includes a portion in contact with the first protective film. The semiconductor device according to claim 18.

20. A semiconductor device including the semiconductor device according to claim 18 and a base material including a conductive portion. The semiconductor device is mounted on the base material, and the rewiring is electrically connected to the conductive portion.

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