Semiconductor element and semiconductor device

Abstract

This semiconductor element comprises: a body including a semiconductor layer; a first electrode located on one side of the body in a first direction and electrically conducted to the semiconductor layer; and a protective film located on the same side as the first electrode with respect to the body and covering the body and a portion of the first electrode. The first electrode has a connection surface which, in terms of the first direction, faces the opposite direction from the side facing the body. The protective film has a covering portion that covers the connection surface. The dimension of the covering portion in the first direction is larger than the dimension of the first electrode in the first direction.

Description

Semiconductor element and semiconductor device

[0001] The present disclosure relates to a semiconductor element and a semiconductor device on which the semiconductor element is mounted.

[0002] Patent Document 1 discloses an example of a semiconductor element (referred to as a semiconductor device in Patent Document 1). The semiconductor element includes a substrate having an element formation surface, pad terminals provided on the element formation surface, a passivation film covering a portion of the pad terminal and the element formation surface, Cu rewiring extending from the pad terminal, an organic coating covering the Cu rewiring, and a resin film covering the organic coating. The surface of the Cu rewiring includes a roughened surface that has been roughened. The organic coating is in contact with the roughened surface. This configuration allows the organic coating to exhibit an anchoring effect with respect to the Cu rewiring. Furthermore, since the organic coating has a relatively strong affinity with the resin film, the adhesive strength of the resin film to the organic coating is stronger. This makes it possible to suppress peeling of the resin film from the Cu rewiring layer.

[0003] When the semiconductor element disclosed in Patent Document 1 is used, heat is conducted from the element formation surface to the pad terminals. This causes repeated thermal stress to act on the passivation film located near the pad terminals. This may cause cracks in the passivation film.

[0004] Japanese Patent Application Laid-Open No. 2014-165335

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor element compared to conventional semiconductor elements. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor element that can suppress the occurrence of cracks in a protective film.

[0006] A semiconductor element provided by a first aspect of the present disclosure includes a body including a semiconductor layer, a first electrode located on one side of the body in a first direction and conducting to the semiconductor layer, and a protective film located on the same side of the body as the first electrode. The protective film covers a portion of the first electrode and the body. The first electrode has a connection surface facing the opposite side from the side facing the body in the first direction. The protective film has a covering portion covering the connection surface. A dimension of the covering portion in the first direction is larger than a dimension of the first electrode in the first direction.

[0007] A second aspect of the present disclosure provides a semiconductor device comprising: the semiconductor element provided by the first aspect of the present disclosure; and a substrate including a conductive portion. The semiconductor element further comprises a second electrode and a plurality of terminals. The semiconductor element is mounted on the substrate. The first electrode and the second electrode of the semiconductor element are conductively joined to the conductive portion via the plurality of terminals.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor element according to a first embodiment of the present disclosure. FIG. 2 is a partially enlarged view of FIG. 1 , showing multiple terminals and multiple bonding layers. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2 . FIG. 4 is a partially enlarged view of FIG. 2 , showing multiple terminals and multiple bonding layers, without illustrating them. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 4 . FIG. 6 is a cross-sectional view of a semiconductor device equipped with the semiconductor element shown in FIG. 1 . FIG. 7 is a partially enlarged view of FIG. 6 . FIG. 8 is a partially enlarged plan view of a semiconductor element according to a second embodiment of the present disclosure, corresponding to FIG. 4 . FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 8 . FIG. 10 is a partially enlarged plan view of a semiconductor element according to a third embodiment of the present disclosure, corresponding to FIG. 4 . FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10 . FIG. 12 is a partially enlarged plan view of a semiconductor element according to a fourth embodiment of the present disclosure, corresponding to FIG. 4 . FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor element A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 5. The semiconductor element A10 is, for example, an LSI (Large Scale Integration) configured using a BGA (Ball Grid Array). The semiconductor element A10 includes a main body 11, multiple electrodes 12, a protective film 20, multiple terminals 50, and multiple bonding layers 60. For ease of understanding, FIG. 2 shows the multiple terminals 50 and multiple bonding layers 60 in a transparent manner. The multiple terminals 50 and multiple bonding layers 60 shown in FIG. 2 are indicated by imaginary lines (two-dot chain lines). For ease of understanding, FIG. 4 omits the multiple terminals 50 and multiple bonding layers 60.

[0012] In the description of the semiconductor element A10 and the semiconductor device B described later, for convenience, the normal direction to the main surface 11A of the body 11 described later will be referred to as the "first direction z." The direction perpendicular to the first direction z will be referred to as the "second direction x." The direction perpendicular to each of the first direction z and the second direction x will be referred to as the "third direction y."

[0013] 1, the main body 11 includes a semiconductor substrate 111 and a semiconductor layer 112 located on one side of the semiconductor substrate 111 in the first direction z. The main body 11 has a main surface 11A facing one side of the first direction z. The semiconductor layer 112 includes the main surface 11A. The semiconductor substrate 111 is obtained from, for example, a silicon wafer. Various semiconductor circuits such as transistors and diodes are configured on and near the main surface 11A of the semiconductor layer 112.

[0014] As shown in FIG. 3 , the multiple electrodes 12 are located on one side of the main body 11 in the first direction z. The multiple electrodes 12 are in contact with the major surface 11A of the main body 11. The multiple electrodes 12 are electrically connected to various semiconductor circuits configured in the semiconductor layer 112. The multiple electrodes 12 include, for example, aluminum (Al). The configurations, such as the arrangement and shape, of the multiple electrodes 12 in this disclosure are merely exemplary. As shown in FIG. 1 , the multiple electrodes 12 include a first electrode 12A, a second electrode 12B, and a third electrode 12C. Each of the first electrode 12A, the second electrode 12B, and the third electrode 12C extends in the third direction y. The first electrode 12A, the second electrode 12B, and the third electrode 12C are arranged along the second direction x. The second electrode 12B is located adjacent to the first electrode 12A in the second direction x. The third electrode 12C is located on the opposite side of the first electrode 12A, with the second electrode 12B sandwiched therebetween.

[0015] 3 and 5 , the first electrode 12A has a connection surface 121 and an end surface 122. The connection surface 121 faces the same side as the main surface 11A of the body 11 in the first direction z. A portion of the connection surface 121 is covered with a protective film 20. The end surface 122 faces the second electrode 12B. The end surface 122 faces the second direction x and is perpendicular to the connection surface 121. The end surface 122 is covered with the protective film 20.

[0016] 2 and 3, the protective film 20 covers the main surface 11A of the main body 11 and a portion of each of the plurality of electrodes 12. The protective film 20 is a thin film containing silicon dioxide (SiO2) or silicon nitride (Si3N4), or a laminate of these thin films. The protective film 20 is exposed to the outside of the semiconductor element A10.

[0017] 2 and 3 , the protective film 20 has a first opening 21 and a second opening 22. The first opening 21 and the second opening 22 each penetrate in the first direction z. The connection surface 121 of the first electrode 12A is exposed from the first opening 21. As viewed in the first direction z, the first opening 21 is located inward from the periphery of the connection surface 121. The second electrode 12B is exposed from the second opening 22. As viewed in the first direction z, the second opening 22 is located inward from the periphery of the second electrode 12B.

[0018] As shown in FIG. 4 , when viewed in the first direction z, the periphery of the first opening 21 includes a first edge 211, a second edge 212, a third edge 213, a first connecting edge 214, and a second connecting edge 215. The first edge 211 extends in the third direction y. The second edge 212 and the third edge 213 each extend in the second direction x. Therefore, the direction in which the second edge 212 and the third edge 213 each extend is different from the direction in which the first edge 211 extends. The third edge 213 is located on the opposite side of the first edge 211 from the second edge 212. The lengths L2 and L3 of the second edge 212 and the third edge 213 are each less than the length L1 of the first edge 211. In the semiconductor element A10, the lengths L2 and L3 are each less than the length L1.

[0019] 4 , the first connecting edge 214 connects the first edge 211 and the second edge 212. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is 20% or more of the length L1 of the first edge 211. When viewed in the first direction z, the first connecting edge 214 is spaced apart from the extension line of the first edge 211 and the extension line of the second edge 212.

[0020] 4 , the second connecting edge 215 connects the first edge 211 and the third edge 213. The second connecting edge 215 is curved. The radius of curvature r2 of the second connecting edge 215 is 20% or more of the length L1 of the first edge 211. In the semiconductor element A10, the radius of curvature r2 is equal to the radius of curvature r1 of the first connecting edge 214. When viewed in the first direction z, the second connecting edge 215 is spaced apart from the extension line of the first edge 211 and the extension line of the third edge 213.

[0021] 2 and 3, the protective film 20 has a covering portion 23. The covering portion 23 covers the connection surface 121 of the first electrode 12A. When viewed in the first direction z, the covering portion 23 entirely overlaps the connection surface 121. As shown in FIG. 5, a dimension t2 of the covering portion 23 in the first direction z is larger than a dimension t1 of the first electrode 12A in the first direction z. The dimension t2 is set to be 5 / 4 or more of the dimension t1.

[0022] As shown in FIGS. 4 and 5 , the covering portion 23 includes a first portion 23A located between the first opening 21 and the second electrode 12B in the second direction x. The first portion 23A defines the first opening 21. The first portion 23A has a first surface 231 and a second surface 232. The first surface 231 faces the connection surface 121 of the first electrode 12A. The first surface 231 is in contact with the connection surface 121. The first surface 231 includes the periphery of the first opening 21, such as the first edge 211 described above. The dimension of the first surface 231 in the second direction x is at least one-third of the dimension of the first electrode 12A in the second direction x. Furthermore, the dimension of the first surface 231 in the second direction x is larger than the gap G between the first electrode 12A and the second electrode 12B. The second surface 232 faces the opposite side of the first surface 231 in the first direction z. Therefore, the second surface 232 faces the same side in the first direction z as the main surface 11A of the main body 11. The dimension of the second surface 232 in the second direction x is equal to the dimension of the first surface 231 in the second direction x.

[0023] 4 and 5 , the protective film 20 has a groove 24. The groove 24 is recessed from the side opposite to the main surface 11A of the main body 11 in the first direction z. The groove 24 extends in the third direction y. As viewed in the first direction z, the groove 24 overlaps with the gap G between the first electrode 12A and the second electrode 12B.

[0024] 5, the protective film 20 has an inner surface 241 that defines the groove portion 24. The inner surface 241 overlaps the first portion 23A of the covering portion 23 when viewed in the second direction x. The inner surface 241 is inclined with respect to the second surface 232 of the first portion 23A.

[0025] As shown in Fig. 3 , the multiple terminals 50 are located on the opposite side of the multiple electrodes 12 from the main body 11 in the first direction z. The multiple terminals 50 are individually and electrically connected to the multiple electrodes 12. As shown in Fig. 5 , each of the multiple terminals 50 is spaced apart from the protective film 20. A portion of each of any two of the multiple terminals 50 is individually housed in the first opening 21 and the second opening 22 of the protective film 20. A portion of each of the multiple terminals 50 protrudes from the protective film 20 in the first direction z. The composition of the multiple terminals 50 includes copper (Cu).

[0026] As shown in FIG. 3 , the multiple bonding layers 60 are located on the opposite side of the multiple electrodes 12 with respect to the multiple terminals 50 in the first direction z. The multiple bonding layers 60 are individually and electrically connected to the multiple terminals 50. The multiple bonding layers 60 are solder. Therefore, the composition of the multiple bonding layers 60 includes tin. The melting point of the multiple bonding layers 60 is lower than the melting point of the multiple terminals 50.

[0027] Next, a semiconductor device B on which the semiconductor element A10 is mounted will be described with reference to FIGS.

[0028] As shown in FIG. 6 , the semiconductor device B includes a semiconductor element A10, a substrate 71, a sealing resin 72, and multiple mounting terminals 73. The semiconductor element A10 is mounted on the substrate 71. The substrate 71 includes a substrate 711, a conductive portion 712, a mounting portion 713, and a connecting portion 714. The substrate 711 is an insulator. The conductive portion 712, the mounting portion 713, and the connecting portion 714 each include, for example, copper. The conductive portion 712 is located on one side of the substrate 711 in the first direction z. The multiple electrodes 12 of the semiconductor element A10 are conductively bonded to the conductive portion 712 via multiple terminals 50 and multiple bonding layers 60. The mounting portion 713 is located on the opposite side of the substrate 711 from the conductive portion 712. The connecting portion 714 is electrically connected to the conductive portion 712 and the mounting portion 713. This provides electrical continuity between the mounting portion 713 and the conductive portion 712. Alternatively, the substrate 71 may include only the conductive portion 712 which is a lead.

[0029] As shown in Fig. 6, the sealing resin 72 covers the semiconductor element A10. The sealing resin 72 is made of a material containing, for example, epoxy resin. The sealing resin 72 is an insulator. As shown in Fig. 7, the sealing resin 72 contacts the protective film 20 of the semiconductor element A10. A portion of the sealing resin 72 is recessed into the first opening 21 and the groove 24 of the protective film 20.

[0030] The multiple mounting terminals 73 are located on the opposite side of the substrate 71 from the semiconductor element A10. Each of the multiple mounting terminals 73 is electrically connected to a mounting portion 713 of the substrate 71. The multiple mounting terminals 73 are used when mounting the semiconductor device B on a wiring board. The multiple mounting terminals 73 are, for example, solder balls.

[0031] Next, the effects of the semiconductor element A10 will be described.

[0032] The semiconductor element A10 includes a main body 11, a first electrode 12A, and a protective film 20. The protective film 20 covers a portion of the first electrode 12A and the main body 11. The protective film 20 has a covering portion 23 that covers the connection surface 121 of the first electrode 12A. The dimension t2 of the covering portion 23 in the first direction z is greater than the dimension t1 of the first electrode 12A in the first direction z. During use of the semiconductor element A10, thermal stress caused by heat conducted from the main body 11 to the first electrode 12A acts on the protective film 20. Therefore, by adopting this configuration, the concentration of thermal stress in the covering portion 23 is reduced. Therefore, with this configuration, it is possible to suppress the occurrence of cracks in the protective film 20 in the semiconductor element A10.

[0033] In the above configuration, the dimension t2 of the covering portion 23 in the first direction z is preferably 5 / 4 or more of the dimension t1 of the first electrode 12A in the first direction z.

[0034] The protective film 20 has a first opening 21 penetrating the covering portion 23 in the first direction z. The connection surface 121 of the first electrode 12A is exposed through the first opening 21. As viewed in the first direction z, the first opening 21 is located inward from the periphery of the connection surface 121. With this configuration, the distribution of thermal stress acting on the periphery of the first opening 21 becomes more uniform.

[0035] The semiconductor element A10 further includes a second electrode 12B located adjacent to the first electrode 12A in the second direction x. The covering portion 23 of the protective film 20 includes a first portion 23A located between the first opening 21 and the second electrode 12B in the second direction x. The first portion 23A has a first surface 231 facing the connection surface 121 of the first electrode 12A. The dimension of the first surface 231 in the second direction x is at least one-third of the dimension of the first electrode 12A in the second direction x. This configuration further increases the contact area of ​​the covering portion 23 with the first electrode 12A. This effectively reduces thermal stress acting on the interface between the first electrode 12A and the covering portion 23.

[0036] In the above configuration, the dimension of the first surface 231 in the second direction x is preferably larger than the gap G between the first electrode 12A and the second electrode 12B.

[0037] When viewed in the first direction z, the periphery of the first opening 21 of the protective film 20 includes a first edge 211, a second edge 212, and a first connecting edge 214. The direction in which the second edge 212 extends is different from the direction in which the first edge 211 extends. The length L2 of the second edge 212 is equal to or shorter than the length L1 of the first edge 211. The first connecting edge 214 is curved. The radius of curvature r1 of the first connecting edge 214 is equal to or greater than 20% of the length L1. This configuration effectively reduces the concentration of thermal stress acting on the periphery of the first opening 21.

[0038] In addition to the above configuration, when viewed in the first direction z, the periphery of the first opening 21 includes a third edge 213 and a second connecting edge 215. The direction in which the third edge 213 extends is the same as the direction in which the second edge 212 extends. The length L3 of the third edge 213 is equal to or shorter than the length L1 of the first edge 211. The second connecting edge 215 is curved. The radius of curvature r2 of the second connecting edge 215 is equal to or greater than 20% of the length L1. This configuration further effectively reduces the concentration of thermal stress acting on the periphery of the first opening 21.

[0039] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 8 and 9. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 8 omits the illustration of multiple terminals 50 and multiple bonding layers 60. Figure 8 corresponds to Figure 4, which shows the semiconductor device A10.

[0040] In the semiconductor element A20, the configuration of the first electrode 12A is different from that of the semiconductor element A10.

[0041] 8 and 9 , the end surface 122 of the first electrode 12A is inclined with respect to the second direction x. The end surface 122 is inclined in the first direction z from the connection surface 121 of the first electrode 12A to the main surface 11A of the body 11 in a direction approaching the second electrode 12B.

[0042] Next, the effects of the semiconductor element A20 will be described.

[0043] The semiconductor element A20 includes a main body 11, a first electrode 12A, and a protective film 20. The protective film 20 covers a portion of the first electrode 12A and the main body 11. The protective film 20 has a covering portion 23 that covers the connection surface 121 of the first electrode 12A. A dimension t2 of the covering portion 23 in the first direction z is larger than a dimension t1 of the first electrode 12A in the first direction z. Therefore, with this configuration, the semiconductor element A20 can also suppress the occurrence of cracks in the protective film 20. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A20 achieves the same effects as the semiconductor element A10.

[0044] In the semiconductor element A20, the end face 122 of the first electrode 12A is inclined with respect to the second direction x. The end face 122 is inclined in the first direction z from the connection surface 121 of the first electrode 12A toward the main body 11 toward the second electrode 12B. This configuration further increases the contact area of ​​the protective film 20 with the first electrode 12A. This effectively reduces thermal stress acting on the interface between the first electrode 12A and the protective film 20.

[0045] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 10 and 11. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 10 omits the illustration of multiple terminals 50 and multiple bonding layers 60. Figure 10 corresponds to Figure 4, which shows the semiconductor device A10.

[0046] In the semiconductor element A30, the configuration of the protective film 20 is different from that of the semiconductor element A20 described above.

[0047] As shown in FIGS. 10 and 11, in a cross section (cross section shown in FIG. 11) in which the first direction z and the second direction x are in-plane directions, an inner surface 241 defining the groove portion 24 is convex.

[0048] Next, the effects of the semiconductor element A30 will be described.

[0049] The semiconductor element A30 includes a main body 11, a first electrode 12A, and a protective film 20. The protective film 20 covers a portion of the first electrode 12A and the main body 11. The protective film 20 has a covering portion 23 that covers the connection surface 121 of the first electrode 12A. A dimension t2 of the covering portion 23 in the first direction z is larger than a dimension t1 of the first electrode 12A in the first direction z. Therefore, with this configuration, the semiconductor element A30 can also suppress the occurrence of cracks in the protective film 20. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A30 achieves the same effects as the semiconductor element A10.

[0050] In the semiconductor element A30, in a cross section (see FIG. 11 ) in which the first direction z and the second direction x are in-plane directions, the inner surface 241 defining the groove portion 24 is convex. This configuration allows the thermal stress transmitted from the second surface 232 of the first portion 23A (covering portion 23) to flow more smoothly in the protective film 20. This effectively reduces the thermal stress acting on the interface between the protective film 20 and the outside.

[0051] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 12 and 13. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 12 omits the illustration of multiple terminals 50 and multiple bonding layers 60. Figure 12 corresponds to Figure 4, which shows the semiconductor device A10.

[0052] In the semiconductor element A40, the configuration of the protective film 20 is different from that of the semiconductor element A30 described above.

[0053] 12 and 13 , the first portion 23A of the covering portion 23 of the protective film 20 has a third surface 233. The third surface 233 faces the same side as the second surface 232 in the first direction z and is located between the first surface 231 and the second surface 232 in the first direction z. The third surface 233 is accommodated in the first opening 21 of the protective film 20. The dimension of the third surface 233 in the second direction x is smaller than the dimension of the second surface 232 in the second direction x. Furthermore, the dimension of the second surface 232 in the second direction x is smaller than the dimension of the first surface 231 in the second direction x.

[0054] Next, the effects of the semiconductor element A40 will be described.

[0055] The semiconductor element A40 includes a main body 11, a first electrode 12A, and a protective film 20. The protective film 20 covers a portion of the first electrode 12A and the main body 11. The protective film 20 has a covering portion 23 that covers the connection surface 121 of the first electrode 12A. A dimension t2 of the covering portion 23 in the first direction z is larger than a dimension t1 of the first electrode 12A in the first direction z. Therefore, with this configuration, the occurrence of cracks in the protective film 20 can be suppressed in the semiconductor element A40 as well. Furthermore, by having a configuration common to the semiconductor element A10, the semiconductor element A40 achieves the same effects as the semiconductor element A10.

[0056] In the semiconductor element A40, the first portion 23A (covering portion 23) of the protective film 20 has a third surface 233. The third surface 233 is accommodated in the first opening 21 of the protective film 20. The dimension of the third surface 233 in the second direction x is smaller than the dimension of the second surface 232 in the second direction x. Furthermore, the dimension of the second surface 232 in the second direction x is smaller than the dimension of the first surface 231 in the second direction x. Here, in the semiconductor device B on which the semiconductor element A10 is mounted, the sealing resin 72 is in contact with the protective film 20 (see FIG. 7 ). Therefore, by adopting this configuration, the sealing resin 72 exhibits an anchoring effect with respect to the third surface 233. As a result, in the semiconductor device B′ on which the semiconductor element A40 is mounted instead of the semiconductor element A10, interfacial peeling between the protective film 20 and the sealing resin 72 can be effectively suppressed.

[0057] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0058] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor element comprising: a body including a semiconductor layer; a first electrode located on one side of the body in a first direction and conductive to the semiconductor layer; and a protective film located on the same side of the body as the first electrode and covering a portion of the first electrode and the body, wherein the first electrode has a connection surface facing the side opposite to the side facing the body in the first direction, and the protective film has a covering portion covering the connection surface, and a dimension of the covering portion in the first direction is larger than a dimension of the first electrode in the first direction. Supplementary note 2. The semiconductor element described in Supplementary note 1, wherein the protective film has a first opening penetrating the covering portion in the first direction, the connection surface being exposed from the first opening, and the first opening being located inward from a periphery of the connection surface as viewed in the first direction. Supplementary note 3. The semiconductor element described in Supplementary note 2, wherein the dimension of the covering portion in the first direction is 5 / 4 or more of the dimension of the first electrode in the first direction. Supplementary note 4. The semiconductor element according to Appendix 3, wherein the protective film includes at least one of silicon dioxide and silicon nitride. Appendix 5. The semiconductor element according to Appendix 4, further comprising: a second electrode located on the same side as the first electrode with respect to the main body and conducting to the semiconductor layer, wherein the protective film covers a portion of the second electrode, and the second electrode is located adjacent to the first electrode in a second direction orthogonal to the first direction, the covering portion is located between the first opening and the second electrode in the second direction and includes a first portion that defines the first opening, the first portion having a first surface facing the connection surface, and the dimension of the first surface in the second direction is one-third or more of the dimension of the first electrode in the second direction. Appendix 6. The semiconductor element according to Appendix 5, wherein the dimension of the first surface in the second direction is larger than the gap between the first electrode and the second electrode. Appendix 7. The semiconductor element according to claim 5, wherein the first electrode has an end face facing the second electrode, the end face is covered with the protective film, and the end face is inclined with respect to the second direction.Appendix 8. The semiconductor element according to Appendix 7, wherein the end surface is inclined in the first direction from the connection surface to the main body toward the second electrode. Appendix 9. The semiconductor element according to Appendix 8, wherein the first portion has a second surface facing the opposite side to the first surface in the first direction, and a dimension of the second surface in the second direction is smaller than a dimension of the first surface in the second direction. Appendix 10. The semiconductor element according to Appendix 9, wherein the first portion has a third surface facing the same side as the second surface in the first direction and positioned between the first surface and the second surface in the first direction, the third surface being accommodated in the first opening, and a dimension of the third surface in the second direction smaller than a dimension of the second surface in the second direction. Appendix 11. The semiconductor element according to Appendix 8, wherein the protective film has a groove portion that is recessed from a side opposite to a side facing the main body in the first direction and extends in a third direction orthogonal to each of the first direction and the second direction, and the groove portion overlaps a gap between the first electrode and the second electrode as viewed in the first direction. Appendix 12. The semiconductor element according to Appendix 11, wherein the protective film has an inner surface that defines the groove portion and overlaps the first portion as viewed in the second direction, and the inner surface is convex in a cross section having the first direction and the second direction as in-plane directions. Appendix 13. The semiconductor element according to Appendix 5, wherein, when viewed in the first direction, the periphery of the first opening includes a first edge and a second edge extending in a direction perpendicular to the first direction, and a first connecting edge connecting the first edge and the second edge, the first surface includes the periphery of the first opening, the direction in which the second edge extends is different from the direction in which the first edge extends, the length of the second edge is equal to or less than the length of the first edge, the first connecting edge is curved, and a radius of curvature of the first connecting edge is 20% or more of the length of the first edge. Appendix 14. The semiconductor element according to Appendix 13, wherein the direction in which the second edge extends is the second direction, and the direction in which the first edge extends is perpendicular to the direction in which the second edge extends. Appendix 15. The semiconductor element according to Appendix 14, wherein, when viewed in the first direction, the first connecting edge is spaced apart from an extension line of the first edge and an extension line of the second edge.Appendix 16. The semiconductor element according to any one of Appendixes 5 to 15, wherein the protective film has a second opening that penetrates in the first direction and exposes the second electrode, and the second opening is located inward from a periphery of the second electrode when viewed in the first direction. Appendix 17. The semiconductor element according to Appendix 16, further comprising a plurality of terminals that are individually conductive to the first electrode and the second electrode, the plurality of terminals being spaced from the protective film, and a portion of each of the plurality of terminals being individually accommodated in the first opening and the second opening. Appendix 18. A semiconductor device comprising: the semiconductor element according to Appendix 17; and a substrate including a conductive portion, wherein the semiconductor element is mounted on the substrate, and the first electrode and the second electrode are conductively joined to the conductive portion via the plurality of terminals. Appendix 19. The semiconductor element according to Appendix 15, wherein the length of the second edge is shorter than the length of the first edge. Appendix 20. The semiconductor element according to Appendix 15, wherein, when viewed in the first direction, the periphery of the first opening includes a third edge located on the opposite side of the second edge with the first edge therebetween, and a second connecting edge connecting the first edge and the third edge, the third edge extending in the second direction, the length of the third edge being equal to or less than the length of the first edge, the second connecting edge being curved, and a radius of curvature of the second connecting edge being 20% ​​or more of the length of the first edge. Appendix 21. The semiconductor element according to Appendix 20, wherein the length of each of the second edge and the third edge is shorter than the length of the first edge. Appendix 22. The semiconductor element according to Appendix 17, wherein the protective film is exposed to the outside.

[0059] A10 to A40: Semiconductor element B: Semiconductor device 11: Main body 11A: Main surface 111: Semiconductor substrate 112: Semiconductor layer 12: Electrode 12A, 12B, 12C: First electrode, second electrode, third electrode 121: Connection surface 122: End surface 20: Protective film 21: First opening 211, 212, 213: First edge, second edge, third edge 214, 215: First connecting edge, second connecting edge 22: Second opening 23: Covering portion 23A: First portion 231, 232, 233: First surface, second surface, third surface 24: Groove portion 241: Inner surface 50: Terminal 60: Bonding layer 71: Base material 711: Substrate 712: Conductive portion 713: Mounting portion 714: Connecting portion 72: Sealing resin 73: Mounting terminal z, x, y: First direction, second direction, third direction

Claims

1. A semiconductor device comprising: a main body including a semiconductor layer; a first electrode located on one side of the main body in a first direction and electrically connected to the semiconductor layer; and a protective film located on the same side as the first electrode with respect to the main body and covering a part of the first electrode and the main body, wherein the first electrode has a connection surface facing a side opposite to the side facing the main body in the first direction, the protective film has a covering portion covering the connection surface, and a dimension of the covering portion in the first direction is larger than a dimension of the first electrode in the first direction.

2. The semiconductor device according to claim 1, wherein the protective film has a first opening penetrating the covering portion in the first direction, the connection surface is exposed from the first opening, and in a view in the first direction, the first opening is located inward of a periphery of the connection surface.

3. The semiconductor device according to claim 2, wherein the dimension of the covering portion in the first direction is 5 / 4 or more of the dimension of the first electrode in the first direction.

4. The semiconductor device according to claim 3, wherein the protective film contains at least one of silicon dioxide and silicon nitride.

5. The semiconductor device according to claim 4, further comprising a second electrode located on the same side as the first electrode with respect to the main body and electrically connected to the semiconductor layer, wherein the protective film covers a part of the second electrode, the second electrode is located adjacent to the first electrode in a second direction orthogonal to the first direction, the covering portion is located between the first opening and the second electrode in the second direction and includes a first portion defining the first opening, the first portion has a first surface facing the connection surface, and a dimension of the first surface in the second direction is 1 / 3 or more of a dimension of the first electrode in the second direction.

6. The semiconductor device according to claim 5, wherein the dimension of the first surface in the second direction is larger than a gap between the first electrode and the second electrode.

7. The semiconductor device according to claim 5, wherein the first electrode has an end surface facing the second electrode, the end surface is covered by the protective film, and the end surface is inclined with respect to the second direction.

8. The semiconductor device according to claim 7, wherein the end surface is inclined in a direction approaching the second electrode from the connection surface to the main body in the first direction.

9. The first part has a second surface facing the side opposite to the first surface in the first direction, and a dimension of the second surface in the second direction is smaller than a dimension of the first surface in the second direction. The semiconductor element according to claim 8.

10. The first part has a third surface facing the same side as the second surface in the first direction and located between the first surface and the second surface in the first direction. The third surface is accommodated in the first opening, and a dimension of the third surface in the second direction is smaller than a dimension of the second surface in the second direction. The semiconductor element according to claim 9.

11. The protective film has a groove portion that is recessed from the side opposite to the side facing the main body in the first direction and extends in a third direction orthogonal to each of the first direction and the second direction. When viewed in the first direction, the groove portion overlaps with a gap between the first electrode and the second electrode. The semiconductor element according to claim 8.

12. The protective film defines the groove portion and has an inner surface overlapping the first part when viewed in the second direction. In a cross section with the first direction and the second direction as in-plane directions, the inner surface is convex. The semiconductor element according to claim 11.

13. When viewed in the first direction, a periphery of the first opening includes a first edge and a second edge extending in a direction orthogonal to the first direction, and a first connecting edge connecting the first edge and the second edge. The first surface includes the periphery of the first opening. A direction in which the second edge extends is different from a direction in which the first edge extends. A length of the second edge is less than or equal to a length of the first edge. The first connecting edge is a curve, and a radius of curvature of the first connecting edge is 20% or more of the length of the first edge. The semiconductor element according to claim 5.

14. A direction in which the second edge extends is the second direction, and a direction in which the first edge extends is orthogonal to the direction in which the second edge extends. The semiconductor element according to claim 13.

15. When viewed in the first direction, the first connecting edge is away from an extension line of the first edge and an extension line of the second edge. The semiconductor element according to claim 14.

16. The protective film has a second opening that penetrates in the first direction and exposes the second electrode. When viewed in the first direction, the second opening is located inward of a periphery of the second electrode. The semiconductor element according to any one of claims 5 to 15.

17. The semiconductor device according to claim 16, further comprising a plurality of terminals individually connected to the first electrode and the second electrode, wherein the plurality of terminals are separated from the protective film, and a part of each of the plurality of terminals is individually accommodated in the first opening and the second opening.

18. A semiconductor device comprising: the semiconductor device according to claim 17; and a base material including a conductive portion, wherein the semiconductor device is mounted on the base material, and the first electrode and the second electrode are conductively bonded to the conductive portion via the plurality of terminals.

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