Substrate processing apparatus, substrate processing method, and computer-readable storage medium

Abstract

Provided is a substrate processing apparatus comprising: a developing unit for developing a substrate having a metal-containing resist film formed thereon; a supply unit for supplying the substrate with a reaction adjustment fluid for promoting a curing reaction of the metal-containing resist; and a control unit, wherein the control unit controls the substrate processing apparatus to execute (A) a step for developing the substrate after exposure processing and before completion of patterning of the metal-containing resist to remove unexposed portions of the film and form recesses using the metal-containing resist on the substrate, and (B) a step for supplying the substrate with the reaction adjustment fluid after step (A) and before the completion.

Description

Substrate processing apparatus, substrate processing method, and computer storage medium

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer storage medium.

[0002] Patent Document 1 discloses a technique for forming a pattern of a metal-containing resist.

[0003] JP 2018-98229 A

[0004] The technology according to the present disclosure improves exposure sensitivity when forming a pattern of a metal-containing resist.

[0005] One aspect of the present disclosure is a substrate processing apparatus including: a development unit that develops a substrate on which a coating of metal-containing resist has been formed; a supply unit that supplies the substrate with a reaction control fluid that promotes a curing reaction of the metal-containing resist; and a control unit, wherein the control unit controls the substrate processing apparatus to perform the following steps: (A) developing the substrate after an exposure process and before completion of a pattern of the metal-containing resist to remove unexposed portions of the coating and form recesses on the substrate using the metal-containing resist; and (B) supplying the reaction control fluid to the substrate after step (A) and before completion of the pattern.

[0006] According to the present disclosure, it is possible to improve the exposure sensitivity when forming a pattern of a metal-containing resist.

[0007] FIG. 1 is a plan view schematically showing the outline of the configuration of a wafer processing system as a substrate processing apparatus according to a first embodiment; FIG. 2 is a front view schematically showing the outline of the configuration of a wafer processing system as a substrate processing apparatus according to the first embodiment; FIG. 3 is a vertical sectional view schematically showing the outline of the configuration of a heat treatment apparatus used for PEB processing; FIG. 4 is a bottom view schematically showing the outline of the configuration of an upper chamber; FIG. 5 is a vertical sectional view schematically showing the outline of the configuration of a development processing apparatus; FIG. 6 is a flowchart showing main steps of a first example of a processing sequence; FIG. 7 is a diagram showing the state of a wafer W in each step in a processing sequence; FIG. 8 is a vertical sectional view schematically showing another example of a development processing apparatus; FIG. 9 is a plan view schematically showing the outline of the configuration of a wafer processing system as a substrate processing apparatus according to a second embodiment;

[0008] In photolithography, a manufacturing process for semiconductor devices, etc., a series of processes is performed to form a desired resist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer"), etc. The series of processes includes, for example, a resist coating process in which a resist solution is supplied onto the substrate to form a resist coating (hereinafter referred to as a "resist film"), an exposure process in which the resist film is exposed to light in a predetermined pattern, a post-exposure bake (PEB) process in which the substrate is heated after exposure for the purpose of promoting a chemical reaction in the exposed resist film, and a development process in which the substrate after the exposure process is developed to form a resist pattern.

[0009] While chemically amplified resists have been widely used as resists in the past, non-chemically amplified metal-containing resists have recently been used. Furthermore, when using metal-containing resists, a technique has been proposed in which high concentrations of moisture and carbon dioxide are supplied to the substrate surface during PEB treatment (i.e., during the heat treatment before forming a pattern by development). One of the goals of this technique is to improve the exposure sensitivity when forming a metal-containing resist pattern, but there is still room for improvement in terms of exposure sensitivity.

[0010] The technology according to the present disclosure improves the exposure sensitivity.

[0011] Hereinafter, a substrate processing apparatus and a substrate processing method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0012] First Embodiment <Wafer Processing System> First, the configuration of a wafer processing system as a substrate processing apparatus according to the first embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that schematically show an outline of the configuration of a wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a development process on a wafer W.

[0013] 1, the wafer processing system 1 includes a cassette station 2 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2 and an interface station 4 that transfers the wafers W between the processing station 3 and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 or three or more processing stations may be installed.

[0014] The cassette station 2 is equipped with a cassette mounting table 21, a wafer transfer device 22, and a wafer transfer device 23. The cassette mounting table 21 has a plurality of cassette mounting plates 24 arranged in the X direction. The cassette station 2 uses the wafer transfer device 22 or the wafer transfer device 23 to transfer wafers between the cassette C mounted on the cassette mounting table 21 and the processing station 3. To this end, the wafer transfer device 22 and the wafer transfer device 23 are each provided with a drive mechanism for movement in various directions, such as the horizontal direction (X direction and Y direction), the vertical direction (Z direction), and around a vertical axis (θ direction), as needed, and may also be provided with a drive mechanism for movement in all directions. At least one of the wafer transfer device 22 and the wafer transfer device 23 is capable of transferring wafers W between the cassette C and the processing station 3. The operation of transferring the wafer W to and from the processing station 3 refers to, for example, transferring the wafer W to and from a third block G3 that includes a transfer device accessible by a wafer transfer device 33 (described later) in the processing station 3. The third block G3 may include a plurality of transfer devices (not shown) arranged vertically.

[0015] An inspection device (not shown) that inspects the wafer W may be provided at a position accessible to either the wafer transfer device 22 or the wafer transfer device 23 .

[0016] The processing station 3 includes multiple blocks, e.g., three blocks G1, G2, and G4 (first, second, and fourth blocks). As shown in FIG. 2, multiple layers 31 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). The fourth block G4 is provided on the interface station 4 side of the processing station 3 (the positive Y-direction side in FIG. 1) or at a connection point with another adjacent processing station 3. The fourth block G4 may include multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0017] The first block G1 includes a plurality of processing devices, such as a patterning film forming device and a development processing device (both not shown). The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device.

[0018] For example, the plurality of processing devices are arranged in a horizontal line in the first block G1. Note that the number, arrangement, and types of these processing devices in the first block G1 can be selected arbitrarily.

[0019] In these patterning film forming apparatuses and developing treatment apparatuses, predetermined processes are performed, for example, by supplying a predetermined processing liquid or a predetermined gas onto the wafer W. In this manner, the patterning film forming apparatus forms a resist film that is used as a mask when forming a pattern on an underlying film, or forms an anti-reflective film for efficiently performing a light irradiation process, such as an exposure process. On the other hand, in the developing treatment apparatus, a portion of the exposed resist film is removed to form the uneven shape that serves as the mask.

[0020] For example, the second block G2 is provided with vertically and horizontally aligned heat treatment devices (not shown) that perform heat treatments such as heating and cooling of the wafer W. The second block G2 also is provided with vertically (Z direction) and horizontally aligned hydrophobization devices that perform hydrophobization treatment to improve the fixation of the resist liquid to the wafer W, and peripheral exposure devices that expose the peripheral portion of the wafer W, both of which are not shown. The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected as desired.

[0021] 1, a wafer transfer area 32 is formed in an area sandwiched between the first block G1 and the second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0022] The wafer transfer device 33 has a transfer arm that is movable in, for example, the Y direction, the front-rear direction, the θ direction, and the Z direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as in Figure 1, the wafer transfer device 33 provided in the processing station 3 located on the interface station 4 side can transfer the wafer W to predetermined devices in the first, second, and fourth blocks G1, G2, and G4, as well as the fifth block G5 described below.

[0023] A plurality of wafer transfer devices 33 are arranged, for example, one above the other. One wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the upper layers 31 among the plurality of layers 31 stacked vertically. Another wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the plurality of layers 31 located below the layer 31. A plurality of wafer transfer regions 32 are provided to enable such transfer of wafers W. Note that the number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be selected arbitrarily, such as by providing a wafer transfer device 33 for each layer 31.

[0024] The wafer transfer area 32, the first block G1, or the second block G2 may also include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers wafers W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0025] The interface station 4 includes a fifth block G5 equipped with a plurality of transfer devices, and a wafer transfer device 41 and a wafer transfer device 42. The interface station 4 transfers the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device using the wafer transfer device 41 or the wafer transfer device 42. To this end, the wafer transfer device 41 and the wafer transfer device 42 are each provided with a drive mechanism for movement in each direction, such as the X direction, the Y direction, the Z direction, and around the vertical axis (the θ direction), as needed, and may also be provided with a drive mechanism for movement in all directions. At least one of the wafer transfer device 41 and the wafer transfer device 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0026] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in a position within the interface station 4 that is accessible by either the wafer transfer device 41 or the wafer transfer device 42.

[0027] The inspection device may be provided in the cassette station 2 as described above, but it may also be provided in the processing station 3 and the interface station 4 at a position accessible to any of the wafer transport devices 33, 41, and 42 provided inside each station.

[0028] The wafer processing system 1 described above is provided with at least one controller 100. The controller 100 processes computer-executable instructions that cause the wafer processing system 1 to perform the various processes described in this disclosure. The controller 100 may be configured to control each element of the wafer processing system 1 to perform the various processes described herein. In one embodiment, part or all of the controller 100 may be included in the coating and developing apparatus 1. The controller 100 may include a processing unit, a storage unit, and a communication interface. The controller 100 is implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations, and to execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating and developing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0029] It should be noted that the wafer processing system of the present disclosure is not limited to the configuration described above. For example, in the above-described embodiment, the wafer processing system is directly connected to the exposure apparatus, and the wafer W is transferred between the interface station 4 and the exposure apparatus. However, the wafer processing system does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where the necessary processing is performed, and then transferred back to the cassette station 2 for removal from the system. Furthermore, unnecessary processing devices listed above may not be provided in the wafer processing system, or processing may not be performed in those devices.

[0030] <Type of Resist> In the wafer processing system 1 of the present disclosure, the resist coating, i.e., the resist film, formed on the wafer W by the resist film forming device is a metal-containing resist coating, i.e., a metal-containing resist film. The metal contained in the metal-containing resist is arbitrary, but is, for example, tin. The metal-containing resist used in the wafer processing system 1 is a negative type.

[0031] <Heat Treatment Device> Next, among the above-mentioned heat treatment devices, a heat treatment device used for post-exposure bake processing, i.e., PEB processing, will be described. Fig. 3 is a vertical cross-sectional view showing a schematic outline of the configuration of a heat treatment device 200 used for PEB processing. Fig. 4 is a bottom view showing a schematic outline of the configuration of an upper chamber 301 described below.

[0032] 3 includes a chamber 300 that forms a processing space K in which a wafer W is accommodated during processing. The chamber 300 includes an upper chamber 301, a lower chamber 302, and a flow straightening member 303. The upper chamber 301 is located on the upper side, and the lower chamber 302 is located on the lower side.

[0033] The upper chamber 301 is configured to be freely elevated and lowered. An elevation mechanism (not shown) having a drive source such as a motor for raising and lowering the upper chamber 301 is controlled by the control device 100. The upper chamber 301 is formed, for example, in a disk shape. The upper chamber 301 has a ceiling 310. The ceiling 310 forms a processing space K below and is disposed so as to face a wafer W on a heating plate 350 (described later). The ceiling 310 is also provided with a shower head 311 serving as a reaction control fluid supply unit.

[0034] The shower head 311 supplies a reactive gas as a reaction control fluid that promotes a reaction in the metal-containing resist film into the processing space K. Specifically, the shower head 311 supplies the reactive gas from the ceiling 310 toward the wafer W on the hot plate 350 housed in the processing space K. Therefore, the heat treatment apparatus 200 having the shower head 311 constitutes a supply unit that supplies a reaction control fluid to the wafer W. The reactive gas is, for example, a gas containing both carbon dioxide and moisture, and at least one of these has a concentration higher than that of the atmosphere. The carbon dioxide concentration of the reactive gas is, for example, 0.04% or more and 50% or less. The moisture concentration of the reactive gas, i.e., humidity, is, for example, 50% or more and a concentration at which condensation does not occur (specifically, for example, 80%). The reactive gas may be a ketone organic solvent gas. The shower head 311 has a plurality of outlet holes 312 and a gas distribution space 313.

[0035] The outlet holes 312 are formed in the lower surface of the shower head 311. For example, as shown in FIG. 4 , the outlet holes 312 are arranged approximately uniformly in the central part of the lower surface of the shower head 311 except for the exhaust ports 331 described later.

[0036] The gas distribution space 313 distributes the reactive gas introduced into the shower head 311 and supplies it to each outlet hole 312. As shown in Figure 3, a supply mechanism 320 is connected to the shower head 311 via a supply pipe 314.

[0037] The supply mechanism 320 supplies a reactive gas to the showerhead 311 (specifically, the gas distribution space 313). The supply mechanism 320 includes, for example, a tank 321 for storing carbonated water as a reactive raw material and a supply pipe 322 for supplying a carrier gas to the tank 321, and supplies a mixed gas of vaporized carbonated water and the carrier gas. The tank 321 may be provided with a heater (not shown) for heating the carbonated water to promote vaporization. The carbonated water may also be vaporized by bubbling the carrier gas in the tank 321. The carrier gas may be, for example, nitrogen gas, compressed air, carbon dioxide gas, or a mixture thereof. The supply pipe 322 is provided with a supply device group 323 including an on-off valve, a flow rate control valve, and the like for controlling the flow of the carrier gas. The supply pipe 314 is provided with a supply device group 315 including an on-off valve, a flow rate control valve, and the like for controlling the flow of the reactive gas. The supply devices 315 and 323 are controlled by the control device 100.

[0038] Furthermore, a central exhaust section 330 is provided on the ceiling section 310 of the upper chamber 301. The central exhaust section 330 and a peripheral exhaust section 340 (described later) constitute an exhaust section for exhausting the interior of the processing space K.

[0039] The central exhaust unit 330 evacuates the processing space K above the hot plate 350 in the chamber 300 from a position on the ceiling 310 near the center of the wafer W on the hot plate 350 in a top view (from the central position in the illustrated example), i.e., from above the center of the wafer W on the hot plate 350 in a top view. The central exhaust unit 330 has an exhaust port 331. As shown in FIG. 4 , the exhaust port 331 is provided on the underside of the shower head 311 near the center of the wafer W on the hot plate 350 in a top view (the central position in the illustrated example), and opens downward. The central exhaust unit 330 evacuates the processing space K through the exhaust port 331.

[0040] 3 , the central exhaust section 330 has a central exhaust path 332 extending upward from an exhaust port 331. An exhaust device 334 such as a vacuum pump is connected to the central exhaust path 332 via an exhaust pipe 333. An exhaust equipment group 335 having a valve for adjusting the amount of exhaust is provided on the exhaust pipe 333. The exhaust device 334 and the exhaust equipment group 335 are controlled by the control device 100.

[0041] A peripheral exhaust unit 340 is provided on the ceiling unit 310 of the upper chamber 301. The peripheral exhaust unit 340 exhausts air from the processing space K from a position on the ceiling unit 310 closer to the peripheral edge of the wafer W on the hot plate 350 than the central exhaust unit 330 in a top view, i.e., from above the peripheral edge of the wafer W on the hot plate 350 in a top view. The peripheral exhaust unit 340 has an exhaust port 341. As shown in FIG. 4 , the exhaust port 341 opens downward from the lower surface of the ceiling unit 310 so as to surround the outer periphery of the shower head 311. The exhaust port 341 may be a plurality of exhaust holes arranged along the outer periphery of the shower head 311. The peripheral exhaust unit 340 exhausts air from the processing space K through the exhaust port 341.

[0042] 3 has a peripheral exhaust path extending from an exhaust port 341. An exhaust device 343 such as a vacuum pump is connected to the peripheral exhaust path via an exhaust pipe 342. An exhaust device group 344 having a valve for adjusting the amount of exhaust is provided on the exhaust pipe 342. The exhaust device 343 and the exhaust device group 344 are controlled by the control device 100.

[0043] The lower chamber 302 is provided to surround the periphery of a heating plate 350 (specifically, the sides and below the heating plate 350 ) as a heating section that supports and heats the wafer W.

[0044] The hot plate 350 has a thick disk shape. The hot plate 350 also has a built-in heater 351, for example. The heater 351 is, for example, a resistance heater. The temperature of the hot plate 350 is adjusted by, for example, controlling the heater 351 using the control device 100, whereby, for example, the wafer W placed on the hot plate 350 is heated to a predetermined temperature.

[0045] Furthermore, the hot plate 350 has, for example, a plurality of suction holes (not shown) for suctioning the wafer W to the hot plate 350. Each suction hole is formed so as to penetrate the hot plate 350 in the thickness direction.

[0046] Furthermore, in the lower chamber 302, for example, three lift pins 360 are provided below the hot plate 350 to support and lift the wafer W from below. The lift pins 360 are raised and lowered by a lift mechanism 361 having a drive source such as a motor that generates a driving force for raising and lowering the lift pins 360. This lift mechanism is controlled by the control device 100. In addition, a through hole 352 through which the lift pins 360 pass is formed in the center of the hot plate 350. The lift pins 360 can pass through the through hole 352 and protrude from the upper surface of the hot plate 350.

[0047] The heat treatment apparatus 200 may further include a cooling plate (not shown) that has a function of cooling the wafer W. The cooling plate, for example, reciprocates between a cooling position outside the chamber 300 and a transfer position where at least a portion of the cooling plate is disposed inside the chamber 300 and where the wafer W is transferred between the cooling plate and the heating plate 350. Alternatively, the cooling plate may be fixed at a position horizontally aligned with the heating plate 350, and the heat treatment apparatus 200 may include a transfer arm that transfers the wafer W between the cooling plate and the heating plate 350.

[0048] <Developing Treatment Device> Next, the developing treatment device as a developing unit will be described. Fig. 5 is a vertical cross-sectional view showing a schematic outline of the configuration of the developing treatment device 400.

[0049] The developing treatment device 400 in Fig. 5 develops the wafer W with a developing fluid, which is a non-liquid fluid having a developing action. Therefore, the developing treatment device 400 is functionally different from the heat treatment device 200 in Fig. 3 which heats the wafer W. However, the developing treatment device 400 has a similar configuration to the heat treatment device 200 in Fig. 3. The main difference is that the heat treatment device 200 has a supply mechanism 320, while the developing treatment device 400 has a supply mechanism 410.

[0050] The supply mechanism 410 of the development treatment device 400 supplies a process gas containing a weak acid gas as a developing fluid to the shower head 311 (specifically, the gas distribution space 313). In the development treatment device 400, the shower head 311 functions as a developing fluid supply unit. The supply mechanism 410 also includes, for example, a tank 411 that stores a mixed solution of a weak acid carboxylic acid and an organic solvent as a source of the weak acid gas, and a supply pipe 412 that supplies a carrier gas to the tank 411. The tank 411 may be provided with a heater (not shown) that heats the mixed solution to promote vaporization of the mixed solution. The mixed solution may also be vaporized by bubbling the carrier gas in the tank 411. The supply pipe 412 is provided with a group of supply devices 413 that includes an on-off valve, a flow rate control valve, and the like that control the flow of the carrier gas. In this case, the group of supply devices 315 also includes an on-off valve, a flow rate control valve, and the like that control the flow of the process gas containing the weak acid gas. The supply equipment groups 315 and 413 are controlled by the control device 100 .

[0051] 1 and 2, the developing treatment device is provided in the first block G1 in the wafer processing system 1. In contrast, the developing treatment device 400 in FIG. 5, which has a configuration similar to that of the heat treatment device, is provided in the second block G2, for example, similar to the heat treatment device.

[0052] <Processing Sequence Example 1> Next, an example of a processing sequence executed by the wafer processing system 1 will be described. Fig. 6 is a flowchart showing the main steps of processing sequence example 1. Fig. 7 is a diagram showing the state of the wafer W in each step in the processing sequence. Note that each of the following steps is executed under the control of the control device 100, which is a control unit, based on a program stored in the above-mentioned program storage unit (not shown).

[0053] 6, first, wafers W are loaded into the wafer processing system 1. Specifically, a cassette C containing a plurality of wafers W is loaded into the cassette station 2 of the wafer processing system 1 and placed on the cassette mounting plate 24. Next, the wafers W in the cassette C are sequentially removed by the wafer transfer device 22 or 23 and transferred to the transfer device in the third block G3.

[0054] (Step S2) Next, the wafer W is subjected to a resist coating process, and a metal-containing resist film is formed on the wafer W. That is, the wafer W is subjected to a metal-containing resist film formation process. Specifically, the wafer W transferred to the transfer device in the third block G3 is supported by the wafer transfer device 33 and transferred to the resist film forming device provided in the first block G1, where a metal-containing resist film is formed on the wafer W. The wafer W is then transferred to a heat treatment device for a pre-bake process (hereinafter referred to as a "PAB process") in the second block G2, and after the pre-bake process, is transferred to the transfer device in the fifth block G5. Note that when there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is temporarily placed in the transfer device in the fourth block G4 before being transferred to the transfer device in the fifth block G5, and is then transferred between the multiple wafer transfer devices 33.

[0055] (Step S3) Subsequently, the wafer W is subjected to an exposure process. Specifically, the wafer W transferred to the transfer device in the fifth block G5 is transferred to the exposure device by the wafer transfer device 41 and the wafer transfer device 42, and is subjected to an exposure process with a predetermined pattern. The exposed wafer W is transferred to the transfer device in the fifth block G5 by the wafer transfer device 41 and the wafer transfer device 42.

[0056] (Step S4) Next, a first post-exposure bake (PEB) process is performed on the wafer W. Specifically, the wafer W, which has been transferred to the transfer device in the fifth block G5 after the exposure process, is transferred by the wafer transfer device 33 to a heat treatment device for the first PEB process, and is subjected to a heat treatment using a hot plate of the heat treatment device.

[0057] The heat treatment apparatus for the first PEB treatment may be the heat treatment apparatus 200 shown in Fig. 3. In this case, the heat treatment performed on the wafer W may be a treatment in which a reactive gas is supplied to the wafer W and the wafer W is heated at a temperature equal to or lower than the boiling point of the solvent of the metal-containing resist (hereinafter referred to as a "high-reactivity low-temperature PEB treatment").

[0058] The high-reaction low-temperature PEB process includes, for example, the following steps S101 to S104.

[0059] In step S101, prior to heating the wafer W, the condition inside the chamber 300 is adjusted. Specifically, the upper chamber 301 is lowered and brought into contact with the lower chamber 302, i.e., the chamber 300 is closed, and the processing space K is formed. The hot plate 350 is then adjusted to a predetermined temperature. The carbon dioxide concentration and humidity inside the processing space K are also adjusted. The adjustment of the carbon dioxide concentration and humidity inside the processing space K is performed, for example, by continuing evacuation by the peripheral exhaust unit 340 and supply of reactive gas from the shower head 311 for a predetermined period of time.

[0060] In step S102, the wafer W is placed on the hot plate 350. Specifically, the upper chamber 301 is raised while the exhaust by the peripheral exhaust unit 340 and the supply of reactive gas from the shower head 311 are continued. Thereafter, the wafer W is transferred to above the hot plate 350 by the wafer transfer device 33. Next, the lift pins 360 are raised and lowered, and the wafer W is transferred from the wafer transfer device 33 to the lift pins 360 and from the lift pins 360 to the hot plate 350, and the wafer W is placed on the hot plate 350. Thereafter, the wafer W is adsorbed to the hot plate 350 via adsorption holes (not shown).

[0061] In step S103, the wafer W on the hot plate 350 is heated for a predetermined time at a heating temperature Tt that is equal to or lower than the boiling point of the solvent in the metal-containing resist, while continuing exhaust by the peripheral exhaust unit 340 and supply of the reactive gas from the shower head 311. Specifically, while continuing exhaust by the peripheral exhaust unit 340 and supply of the reactive gas from the shower head 311, the upper chamber 301 is lowered and abuts on the lower chamber 302, and the chamber 300 is closed. This starts heating the wafer W on the hot plate 350 at the heating temperature Tt for a predetermined time Jt while supplying the reactive gas, i.e., high-reaction, low-temperature PEB.

[0062] Specifically, the heating temperature Tt is equal to or lower than the boiling point of the solvent in the metal-containing resist, and is, for example, equal to or higher than 80° C. By setting the temperature at 80° C. or higher, it is possible to easily achieve uniformity in the temperature of the hot plate 350. The boiling point of the solvent in the metal-containing resist is, for example, 130° C.

[0063] Until the first predetermined time J1 (<Jt) has elapsed since the start of the high-reactivity low-temperature PEB, exhaust by the central exhaust section 330 is not performed, and exhaust by the peripheral exhaust section 340 and supply of reactive gas from the shower head 311 are performed.

[0064] The first predetermined time J1 is set so that the metal-containing resist film on the wafer W is solidified to a desired level. In other words, the first predetermined time J1 is set so that condensation of the metal-containing resist on the wafer W progresses to a desired level. Information about the first predetermined time J1 is stored in a storage unit (not shown).

[0065] When the first predetermined time J1 has elapsed since the start of the high-reactivity, low-temperature PEB, exhaust by the central exhaust unit 330 is started while exhaust by the peripheral exhaust unit 340 and supply of reactive gas from the shower head 311 are continued.

[0066] The high-reaction, low-temperature PEB ends when a second predetermined time J2 has elapsed since the central exhaust unit 330 started exhausting. Specifically, for example, the upper chamber 301 is raised and the chamber 300 is opened. At this time, for example, exhausting by the central exhaust unit 330, exhausting by the peripheral exhaust unit 340, and supply of reactive gas from the shower head 311 continue. The second predetermined time J2 is set so that the solidification of the metal-containing resist film on the wafer W progresses to a desired level. Information about the second predetermined time J2 is stored in a storage unit (not shown).

[0067] When the wafer W is heated as in the high-reaction low-temperature PEB, i.e., when the PEB process is performed at a low temperature at which metal-containing sublimates are not generated from the metal-containing resist film, the reaction within the metal-containing resist film due to the PEB process is insufficient.

[0068] To compensate for this lack of reaction, in the high-reactivity, low-temperature PEB, a reactive gas is supplied to the wafer W (specifically, to the processing space K). As described above, the reactive gas may be a gas containing both carbon dioxide and moisture, with at least one of the carbon dioxide and moisture concentrations higher than that of the atmosphere, or a ketone organic solvent gas. The inventors have confirmed that when a gas containing both carbon dioxide and moisture, with at least one of the carbon dioxide and moisture concentrations higher than that of the atmosphere, is used as the reactive gas, a reaction (specifically, a condensation reaction of the metal-containing resist) within the metal-containing resist film due to heating proceeds. Similarly, the inventors have confirmed that a reaction within the metal-containing resist film due to heating proceeds when a ketone organic solvent gas is used as the reactive gas.

[0069] In step S104, the wafer W is removed from the heating plate 350 and carried out to the outside of the heat treatment apparatus 200 in the reverse order of the procedure of placing the wafer W in step S102.

[0070] (Step S5) The wafer W that has been subjected to the first PEB treatment is subjected to a first development treatment. Specifically, the wafer W that has been subjected to the first PEB treatment is transferred to a development treatment device by the wafer transfer device 33, and developed. Unexposed portions of the metal-containing resist film on the wafer W are removed, and recesses Ra of the metal-containing resist are formed on the wafer W.

[0071] The recesses Ra formed in step S5 may expose the underlying film U of the metal-containing resist film R, as shown in FIG. 7(A).

[0072] Furthermore, as shown in FIG. 7(B), the depth D of the recess Ra formed in step S5 may be smaller than the thickness T of the metal-containing resist film. Specifically, the depth of the recess Ra may be smaller than the thickness T of the thickest part of the metal-containing resist film R after the formation of the recess Ra. More specifically, the depth of the recess Ra is, for example, 1 / 50 to 1 / 2 of the thickness T of the thickest part of the metal-containing resist film R after the formation of the recess Ra. Note that the recess Ra in FIG. 7(B) can be said to be a film of metal-containing resist remaining at the bottom without exposing the underlying film U of the metal-containing resist film. Furthermore, the width L of the recess Ra formed in step S5 is a target width L ０ That is, in step S5, the recesses Ra may be formed to have dimensions smaller than the target dimensions.

[0073] 5 using a developing fluid, or may be performed by a developing treatment device using a predetermined processing liquid (specifically, a developer), or a developing treatment device using a predetermined gas (specifically, for example, a gas other than the developing fluid and plasma). That is, the development performed in step S5 may be fluid development using a developing fluid, wet development using a processing liquid, or dry development using a gas other than the developing fluid and plasma.

[0074] The above-mentioned fluid development and dry development, which do not cause pattern collapse due to the surface tension of the treatment liquid, are preferably used when forming the recesses Ra in either of Figures 7(A) and 7(B). Furthermore, wet development may be used only when forming the recesses Ra in Figure 7(B), which are less likely to cause pattern collapse.

[0075] The above-described fluid development includes, for example, the following steps S111 and S112, which are performed in the development processing device 400.

[0076] In step S111, the wafer W is exposed to an acid atmosphere, which is an atmosphere containing a weak acid gas as a developing fluid, under a pressure equal to or higher than atmospheric pressure.

[0077] Specifically, first, the upper chamber 301 of the development treatment device 400 is lifted, and the wafer W is transferred by the wafer transfer device 33 to above the hot plate 350. Next, the lift pins 360 are lifted and the wafer transfer device 33 is retracted, and the wafer W is supported by the lift pins 360. Thereafter, the upper chamber 301 is lowered, and the processing space K is defined by the upper chamber 301 and the lower chamber 302. At this time, the wafer W continues to be supported by the lift pins 360 and separated from the hot plate 350, for example. At this stage, the hot plate 350 is adjusted to a predetermined temperature.

[0078] Thereafter, a processing gas containing a weak acid gas is supplied to the wafer W from the shower head 311, and exhaust is performed by the central exhaust unit 330 and the peripheral exhaust unit 340. As a result, the wafer W is exposed to an acid atmosphere containing a weak acid gas under a predetermined pressure equal to or higher than atmospheric pressure in the processing space K. When the negative metal-containing resist film on the wafer W is exposed to the acid atmosphere, the unexposed portions react with the weak acid gas and are converted into low-molecular-weight compounds. Note that "atmospheric pressure" is, for example, 670 Torr to 760 Torr.

[0079] In this step, exhaust by the central exhaust section 330 and exhaust by the peripheral exhaust section 340 are performed so that, for example, processing gas containing weak acid gas does not leak out of the chamber 300 and atmospheric gas outside the chamber 300 does not flow into the chamber 300.

[0080] Meanwhile, in step S112, the product of the reaction between the metal-containing resist and the weak acid gas is removed by heating the wafer W. Specifically, for example, without the wafer W being unloaded from the chamber 300, the supply of the process gas from the shower head 311 is stopped while the central exhaust unit 330 and the peripheral exhaust unit 340 continue to exhaust. The lift pins 360 supporting the wafer W are lowered, and the wafer W is transferred to and placed on the hot plate 350. The wafer W is then suctioned to the hot plate 350 via suction holes (not shown). This initiates a heating process for the wafer W supported on the hot plate 350, which is completed after a predetermined time has elapsed. After the heating process is completed, the wafer W is removed from the hot plate 350 by the lift pins 360, transferred to the wafer transfer device 33, and unloaded from the development processing device 400.

[0081] In step S112, when the wafer W is heated, unexposed portions of the negative metal-containing resist film on the wafer W that have been converted into low-molecular-weight compounds by reaction with the weak acid gas are sublimated and removed. For example, when the weak acid gas is acetic acid gas and the metal-containing resist film contains tin as a metal, tin acetate is sublimated.

[0082] Furthermore, in step S112, in order to promote sublimation of the unexposed portions of the metal-containing resist film, the processing space K may be evacuated to a low pressure within the processing space K. Specifically, when the weak acid gas is acetic acid gas and the metal-containing resist film contains tin as the metal, evacuation by the central exhaust unit 330 and the peripheral exhaust unit 340 may be performed so that the pressure within the processing space K becomes equal to or lower than the vapor pressure of tin acetate for the set temperature of the wafer W.

[0083] The heating of the wafer W by the hot plate 350 is performed even when the wafer W is not supported on the hot plate 350. For example, as in step S111 of the above example, even when the wafer W is supported by the lift pins 360 and separated from the hot plate 350, the wafer W is heated by the hot plate 350. Furthermore, even when the wafer W is separated from the hot plate 350, the product produced by the reaction between the metal-containing resist and the weak acid gas is sublimated and removed. Therefore, it can be said that the molecular weight reduction process using the weak acid gas in step S111 and the sublimation process in step S112 are performed in parallel.

[0084] (Step S6) The wafer W that has been subjected to the first development process is subjected to a second PEB process in which a reactive gas is supplied and the wafer W is heated. Specifically, the wafer W that has been subjected to the first development process is transferred by the wafer transfer device 33 to a heat treatment device for the second PEB process, and is subjected to a heat treatment using a hot plate of the heat treatment device.

[0085] The thermal processing apparatus for the second PEB processing is, for example, the thermal processing apparatus 200 shown in Fig. 3, and a reactive gas is supplied to the wafer W during or before the second PEB processing. The second PEB processing performed on the wafer W using the thermal processing apparatus 200 shown in Fig. 3 may be the high-reactivity, low-temperature PEB processing described above.

[0086] 7(C) and 7(D), by heating the wafer W while supplying the reactive gas or after supplying the reactive gas, not only the tops of the convex portions constituting the concave portions Ra of the metal-containing resist on the wafer W but also the side surfaces constituting the concave portions Ra become reacted portions P1 that have reacted with the reactive gas. That is, among the boundary portions of the exposed portion of the metal-containing resist film and the unexposed portion, not only the portion corresponding to the film surface before development but also the portion corresponding to the inside of the film before development (i.e., the portion away from the film surface) reacts with the reactive gas.

[0087] 7A, the heating in step S6 is performed to harden the resist pattern P to such an extent that it is hardly removed in the second development in step S7 described later (to allow the condensation reaction to proceed). Also, when a recess Ra smaller than the target dimension as shown in FIG. 7B is formed in step S5, the heating in step S6 is performed to harden the resist pattern P to such an extent that it is removed in the second development in step S7 described later (to allow the condensation reaction to proceed).

[0088] (Step S7) The wafer W that has been subjected to the second PEB process is subjected to a second development process. Specifically, the wafer W that has been subjected to the second PEB process is developed, and then transferred by the wafer transfer device 33 to a development processing device, where it is developed.

[0089] 7A, when a recess Ra exposing the underlying film U of the metal-containing resist film R is formed in step S5, the residue of the metal-containing resist at the bottom of the recess Ra is removed by the second development in step S7, completing the metal-containing resist pattern. On the other hand, when a recess Ra smaller than the target dimension is formed in step S5, as shown in FIG. 7B, the portion of the recess Ra larger than the target dimension is removed by the second development in step S7, completing the metal-containing resist pattern.

[0090] The second development in step S7 may be performed by the development processing device 400 in Fig. 5 using a developing fluid, instead of a development processing device using a predetermined processing liquid, or by a development processing device using a predetermined gas (specifically, for example, a gas other than the developing fluid and plasma). That is, the development performed in step S7 may be the aforementioned fluid development or dry development, instead of wet development. This makes it possible to prevent pattern collapse due to the surface tension of the processing liquid.

[0091] (Step S8) The wafer W that has been subjected to the second development process is subjected to (POST process). Specifically, the wafer W that has been subjected to the second PEB process is transferred by the wafer transfer device 33 to a heat treatment device for POST process, and is subjected to heat treatment using a hot plate of the heat treatment device. This step S8 may be omitted.

[0092] (Step S9) Then, the wafer W is unloaded from the wafer processing system 1. Specifically, the wafer W is transported by the wafer transport device 33 to the delivery device in the third block G3, and then transported by the wafer transport device 22 or 23 in the cassette station 2 to the cassette C on the predetermined cassette mounting plate 24. In this way, a series of photolithography steps is completed.

[0093] <Major Effects of Example 1 of Processing Sequence> As described above, in this example, after the exposure process and before the metal-containing resist pattern P is completed, recesses Ra are formed in the metal-containing resist, and then a reactive fluid is supplied to the wafer W. Therefore, not only the portion of the boundary between the exposed portion of the metal-containing resist film R and the unexposed portion that corresponds to the film surface before recess formation but also the portion that corresponds to the film interior before recess formation (i.e., the portion away from the film surface) can be reacted with the reaction adjusting fluid. This allows the curing reaction (specifically, the condensation reaction of the metal-containing resist) of the boundary portion, which tends to be insufficiently cured, to proceed. In particular, the portion that corresponds to the film interior is difficult to cure because the exposure light does not easily reach it, but the curing reaction can also proceed in this portion. Therefore, according to this embodiment, the exposure sensitivity when forming a metal-containing resist pattern can be improved.

[0094] Furthermore, in this example, the aforementioned fluid development or dry development may be used for at least one of the first and second developments, rather than wet development. This prevents pattern collapse due to the surface tension of the processing liquid. Therefore, pattern collapse associated with thickening of the metal-containing resist film can be suppressed. By thickening the metal-containing resist film, the surface roughness of the pattern can be improved. Therefore, this example can achieve all three of the following: improved pattern surface roughness, suppression of pattern collapse, and improved exposure sensitivity. The "pattern surface roughness" refers to, for example, line width roughness (LWR) and line edge position roughness (LER).

[0095] As described above, the first and second development steps may be performed using the fluid development method. Fluid development does not use plasma; that is, the portions of the metal-containing resist film to be developed are removed without plasma. When plasma is supplied from above the processing space toward the wafer below, the processing space needs to be enlarged vertically to adjust the state of the ions and radicals in the plasma. In contrast, fluid development does not use plasma, so the processing space K does not need to be enlarged vertically. Therefore, fluid development allows for a greater number of layers, including the development processing equipment, to be stacked within a safe working height compared to dry development using plasma. Furthermore, unlike wet development, fluid development uses a simpler structure than the drainage configuration and liquid receiving cup structure. Therefore, fluid development allows for a greater number of layers, including the development processing equipment, to be stacked within a safe working height compared to wet development. Therefore, using the fluid development method for at least one of the first and second development steps facilitates improved development throughput.

[0096] Furthermore, in this example, after the exposure process and before the pattern of the metal-containing resist is completed, a process of heating the wafer W may be performed in which a reactive gas is supplied to the wafer W and the wafer W is heated at a temperature equal to or lower than the boiling point of the solvent of the metal-containing resist, i.e., the above-mentioned high-reaction, low-temperature PEB process. Specifically, at least one of the first PEB process and the second PEB process may be the above-mentioned high-reaction, low-temperature PEB process.

[0097] In at least one of the first PEB process and the second PEB process, which are high-reactivity, low-temperature PEB processes, the heating temperature of the wafer W is below the boiling point of the solvent in the metal-containing resist, thereby suppressing the generation of metal-containing sublimates. As a result, contamination of the wafer W and the heat treatment device 40 by metal-containing sublimates can be suppressed. Furthermore, in at least one of the first PEB process and the second PEB process, which are high-reactivity, low-temperature PEB processes, even if the heating temperature of the wafer W is as low as below the boiling point of the solvent in the metal-containing resist, a reactive gas is supplied to the wafer W, thereby suppressing insufficient reaction in the metal-containing resist film.

[0098] Furthermore, by lowering the heating temperature of the wafer W in the first PEB treatment to below the boiling point, solidification of the unexposed portions of the metal-containing resist can be suppressed. That is, the solubility of the unexposed portions of the metal-containing resist can be improved. Therefore, film loss of the exposed portions of the metal-containing resist film can be suppressed when forming the recesses Ra (specifically, during the first development in step S5). Furthermore, during the first development, the recesses Ra can be formed in a short time.

[0099] 7A , by lowering the heating temperature of the first PEB treatment to a temperature equal to or lower than the boiling point of the solvent in the metal-containing resist, the following effect can be achieved: Since the solubility of the unexposed portions of the metal-containing resist can be improved, residues of the metal-containing resist can be prevented from being left at the bottom of the recesses Ra, and bridge defects can be prevented.

[0100] Furthermore, as described above, the depth of the recesses Ra formed in the first development may be smaller than the thickness T of the metal-containing resist film. This makes it possible to further suppress collapse of the metal-containing resist pattern P. Therefore, it is possible to suppress pattern collapse that occurs with an increase in the thickness of the metal-containing resist film.

[0101] <Another Example of Development Processing Apparatus and Example 2 of Processing Sequence> Figure 8 is a vertical cross-sectional view schematically illustrating another example of the development processing apparatus. In the development processing apparatus 400A of the example of Figure 8, a supply mechanism 420 is connected to a shower head 311 via a supply pipe 314. The supply mechanism 420 is configured to selectively supply either a processing gas containing a weak acid gas or a gas for PEB processing (e.g., a reactive gas) to the shower head 311 (specifically, the gas distribution space 313). The supply mechanism 420 is controlled by the control device 100.

[0102] In the processing sequence example 2 executed by the wafer processing system 1 including the developing treatment device 400A, steps S1 to S6 are performed similarly to the processing sequence example 1. However, while in the processing sequence example 1, the first developing treatment and the second PEB treatment on the wafer W are performed by different devices, in this example, they are performed by the same device, specifically, the developing treatment device 400A.

[0103] During the first development process by the development processing apparatus 400 A, a process gas containing a weak acid gas is supplied from the supply mechanism 420 toward the wafer W through the shower head 311 .

[0104] In this example, after the first development process, the wafer W is not transferred from the development processing device 400 A, and is subsequently subjected to the second PEB process by the same development processing device 400 A. That is, after the formation of the recesses Ra in step S5 and before the completion of the pattern of the metal-containing resist, the wafer W is heated in the processing space K of the development processing device 400 A where the wafer W is located when the recesses Ra are formed in step S5.

[0105] During the second development process by the development processing device 400A, the reactive gas from the supply mechanism 420 is supplied toward the wafer W through the shower head 311.

[0106] According to the processing sequence of this example, the waiting time from the first development process to the start of the second PEB process can be shortened. Therefore, fluctuations in the CD (Critical Dimension) of the metal-containing resist pattern due to the longer waiting time can be suppressed. Furthermore, according to the processing sequence of this example, the waiting time can be made substantially uniform between wafers W, and therefore the effect of the waiting time on the CD of the metal-containing resist pattern can be made substantially uniform between wafers W. Therefore, according to the processing sequence of this example, variations in the CD of the metal-containing resist pattern between wafers W can be suppressed. In this example, the process performed after the second PEB process is, for example, the same as in Example 1 of the processing sequence.

[0107] Second Embodiment <Wafer Processing System> Fig. 9 is a plan view schematically showing an outline of the configuration of a wafer processing system as a substrate processing apparatus according to a second embodiment. The wafer processing system 1A in Fig. 9 includes a developing treatment device that develops wafers W on which a metal-containing resist film has been formed, and another developing treatment device that develops wafers W on which a chemically amplified resist film (hereinafter referred to as "chemically amplified resist film") has been formed.

[0108] The developing treatment device that develops the wafer W on which the metal-containing resist film is formed is, for example, the developing treatment device 400 or the developing treatment device 400A that performs fluid development on the wafer W. When the developing treatment device 400 is used, the developing treatment device 400 is provided, for example, in the block G2 of the processing station 3. The same applies when the developing treatment device 400A is used.

[0109] The developing treatment device that develops the wafer W on which the chemically amplified resist film is formed is, for example, a developing treatment device 500 that performs wet development on the wafer W. The developing treatment device 500 is provided in the block G1 of the processing station 3, for example.

[0110] The wafer W on which the metal-containing resist film is formed and the wafer W on which the chemically amplified resist film is formed are each subjected to a heat treatment by a heating device. The heating device is provided in the block G2 of the processing station 3, for example, similar to the developing treatment device 400.

[0111] The wafer processing system 1A may include a resist coating apparatus that forms a metal-containing resist film on the wafer W, and another resist coating apparatus that forms a chemically amplified resist film on the wafer W. The two resist coating apparatuses are provided in the block G1 of the processing station 3, for example.

[0112] The resist coating device for the metal-containing resist film, the resist coating device for the chemically amplified resist film, and the developing treatment device for the chemically amplified resist film are provided on different layers in block G1 of processing station 3, and the processing spaces are partitioned from one another. Similarly, the heating device for the metal-containing resist film or the chemically amplified resist film, and the developing treatment device for the metal-containing resist film may be provided on different layers in block G2 of processing station 3, and the processing spaces may be partitioned from one another. Furthermore, the heating device for the metal-containing resist film and the heating device for the chemically amplified resist film may be provided on different layers in block G2 of processing station 3, and the processing spaces may be partitioned from one another.

[0113] In this embodiment, the number of steps included in the series of processing sequences executed by the wafer processing system 1A is the same for both the chemically amplified resist and the metal-containing resist, and the type of processing performed on the wafer W in the n-th step (n is a natural number equal to or greater than 1) is approximately the same for both the chemically amplified resist and the metal-containing resist.

[0114] Specifically, the above-described series of processing sequences for a wafer W using a chemically amplified resist mainly includes the following steps, in order: A1: Formation of a chemically amplified resist film A2: PAB processing A3: PEB processing A4: Wet development A5: Post-processing The wafer W on which a chemically amplified resist pattern has been formed through steps A1 to A5 is transferred to an etching device external to the wafer processing system 1A. Then, using the chemically amplified resist pattern as a mask, the underlying film of the chemically amplified resist film is etched.

[0115] On the other hand, in the above-mentioned series of processing sequences for a wafer W having a metal-containing resist film, the following steps are mainly performed in order: B1: Formation of a metal-containing resist film; B2: PAB processing; B3: First PEB processing; B4: Fluid development (recess formation); B5: Second PEB processing. Through steps B1 to B5, for example, recesses Ra made of the metal-containing resist film that are smaller than the target dimensions are formed on the wafer W. The wafer W is then transferred to an etching apparatus external to the wafer processing system 1A. Then, when the underlying film of the metal-containing resist film is etched using the metal-containing resist pattern as a mask, portions of the recesses Ra that are larger than the target dimensions are removed. That is, in the fluid development of step B4, recesses smaller than the target dimensions are formed, and when the underlying film is etched by the external etching apparatus, the portions of the recesses Ra that are larger than the target dimensions are removed.

[0116] By performing the fluid development in step B4 in this manner, the number of steps included in the series of processing sequences executed by the wafer processing system 1A can be made equal for chemically amplified resist and metal-containing resist. That is, the number of processing devices used in the series of processing sequences is the same for metal-containing resist and chemically amplified resist. The number of wafer transports by the wafer transport device is the same for metal-containing resist and chemically amplified resist. Therefore, when processing related to metal-containing resist and processing related to chemically amplified resist is performed consecutively, the waiting time for transport by the wafer transport device can be suppressed. Therefore, processing related to metal-containing resist and processing related to chemically amplified resist can be performed consecutively with good productivity.

[0117] Furthermore, in this embodiment, recesses are formed in the wafer W using the metal-containing resist through the above-described step B4, and then in the subsequent step B5, a reactive gas is supplied to the wafer W. Therefore, also in this embodiment, it is possible to improve the exposure sensitivity when forming a pattern of the metal-containing resist.

[0118] In this embodiment, too, by setting the heating temperature of the wafer W during the first PEB treatment in step B3 to below the boiling point of the solvent in the metal-containing resist, the generation of metal-containing sublimates can be suppressed during the PEB treatment. Therefore, a component for dealing with metal-containing sublimates can be omitted from the heat treatment apparatus for the first PEB treatment. Therefore, a heat treatment apparatus for PEB treatment of a chemically amplified resist that does not originally have a component for dealing with metal-containing sublimates can also be used as a heat treatment apparatus for the first PEB treatment of a metal-containing resist. That is, a heat treatment apparatus can be shared between the PEB treatment of a chemically amplified resist and the first PEB treatment of a metal-containing resist. When supplied in this manner, the heating temperature of the wafer W may be the same for the PEB treatment of a chemically amplified resist and the first PEB treatment of a metal-containing resist. This eliminates the need to change the temperature of the hot plate of the shared heat treatment apparatus when performing processes for a metal-containing resist and a chemically amplified resist consecutively, and also eliminates the need to wait for the hot plate temperature to stabilize after the change. Therefore, the processing for the metal-containing resist and the processing for the chemically amplified resist can be carried out continuously with good productivity.

[0119] For the same reason, by setting the heating temperature of the wafer W during the second PEB treatment in step B5 below the boiling point of the solvent in the metal-containing resist, a heat treatment device can be shared between the POST treatment for the chemically amplified resist and the second PEB treatment for the metal-containing resist. In this case, the heating temperature of the wafer W may be the same for the POST treatment for the chemically amplified resist and the second PEB treatment for the metal-containing resist. This eliminates the need to change the temperature of the heating plate of the shared heat treatment device when performing the treatment for the metal-containing resist and the treatment for the chemically amplified resist consecutively, and also eliminates the need to wait for the temperature of the heating plate to stabilize after the change. Therefore, the treatment for the metal-containing resist and the treatment for the chemically amplified resist can be performed consecutively with high productivity.

[0120] <Variation of the second embodiment> The fluid development in step B4 may form a recess Ra that exposes the underlying film U of the metal-containing resist film, and the residue at the bottom of the recess Ra may be removed by etching the underlying film using the external etching device.

[0121] <Other Modifications> In the above examples, the reaction adjusting fluid is a reactive gas, but it may be a mist. Also, in the above examples, the developing fluid is a weak acid gas, but it may be a mist.

[0122] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0123] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0124] The following configuration examples also fall within the technical scope of the present disclosure: (1) A substrate processing apparatus comprising: a developing unit that develops a substrate coated with a metal-containing resist; a supply unit that supplies the substrate with a reaction control fluid that promotes a curing reaction of the metal-containing resist; and a control unit, wherein the control unit controls the substrate processing apparatus to perform the following steps: (A) developing the substrate after an exposure process and before completion of a pattern of the metal-containing resist to remove unexposed portions of the coating and form recesses on the substrate with the metal-containing resist; and (B) supplying the reaction control fluid to the substrate after the step (A) and before completion. (2) The substrate processing apparatus according to (1), comprising: a heating unit that heats the substrate and also serves as the supply unit, wherein the control unit controls the substrate processing apparatus to further perform the following steps: (C) supplying the reaction control fluid to the substrate after the exposure process and before completion, and heating the substrate at a temperature equal to or lower than the boiling point of a solvent in the metal-containing resist. (3) The substrate processing apparatus according to (1) or (2), wherein the recess exposes an underlying film of the metal-containing resist coating. (4) The substrate processing apparatus according to (1) or (2), wherein the depth of the recess is smaller than the thickness of the metal-containing resist coating. (5) The substrate processing apparatus according to any one of (1) to (4), wherein the developing unit has a fluid supply part that supplies a developing fluid, which is a non-liquid fluid having a developing action, to the substrate, and the step (A) forms the recess by supplying the developing fluid to the substrate. (6) The substrate processing apparatus according to (5), wherein the control part controls the substrate processing apparatus to further perform a step (D) of heating the substrate after the step (A) and before the completion, and the heating of the substrate in the step (D) is performed in a processing space of the developing unit where the substrate is located when the recess is formed in the step (A).(7) The substrate processing apparatus according to any one of (1), (2), and (4), further comprising another developing unit that develops a substrate coated with a chemically amplified resist, wherein the developing unit for the metal-containing resist performs the step (A) to form the recesses smaller than the target dimensions, and a process of etching an underlying film of the metal-containing resist coating that is performed on the substrate after the step (B) to remove portions of the recesses larger than the target dimensions. (8) A substrate processing method comprising: (A) developing the substrate coated with a metal-containing resist after an exposure process and before completion of a pattern of the metal-containing resist to remove unexposed portions of the coating and form recesses made of the metal-containing resist on the substrate; and (B) supplying the substrate with a reaction adjusting fluid that promotes a curing reaction of the metal-containing resist after the step (A) and before completion. (9) (C) The substrate processing method according to (8), further comprising the step of supplying the reaction control fluid to the substrate after the exposure process and before the completion, and heating the substrate at a temperature equal to or lower than the boiling point of a solvent in the metal-containing resist. (10) The substrate processing method according to (8) or (9), wherein the recess exposes an underlying film of the metal-containing resist coating. (11) The substrate processing method according to (8) or (9), wherein the depth of the recess is smaller than the thickness of the metal-containing resist coating. (12) The substrate processing method according to any one of (8) to (11), wherein the step (A) supplies a developing fluid, which is a non-liquid fluid having a developing action, to the substrate to form the recess. (13) The substrate processing method according to (12), further comprising (D) a step of heating the substrate after the step (A) and before the completion, wherein the heating of the substrate in the step (D) is performed in a processing space in which the substrate is located when the recess is formed in the step (A).(14) A substrate processing method according to any one of (8), (9), and (11), in which the (A) step is performed in the developing unit of a substrate processing apparatus that includes a developing unit for developing the substrate on which the metal-containing resist coating is formed and another developing unit for developing a substrate on which a chemically amplified resist coating is formed, to form the recesses that are smaller than the target dimensions, and a process of etching the underlying film of the metal-containing resist coating that is performed on the substrate after the (B) step is performed to remove the portions of the recesses that are larger than the target dimensions. (15) A readable computer storage medium storing a program that runs on a computer of a control unit that controls a substrate processing apparatus to cause the substrate processing apparatus to execute a substrate processing method, the substrate processing method comprising: (A) developing a substrate having a metal-containing resist coating formed thereon after an exposure process and before completion of a pattern of the metal-containing resist, thereby removing unexposed portions of the coating and forming recesses made of the metal-containing resist on the substrate; and (B) supplying a reaction adjusting fluid to the substrate after the (A) process and before completion of the pattern, which promotes a curing reaction of the metal-containing resist.

[0125] 1, 1A Wafer processing system 2 Second cassette station 100 Control device 200 Heat treatment device 400, 400A Development treatment device Ra Recess W Wafer

Claims

1. A substrate processing apparatus comprising: a development unit that develops a substrate on which a metal-containing resist film has been formed; a supply unit that supplies the substrate with a reaction control fluid that promotes the curing reaction of the metal-containing resist; and a control unit, wherein the control unit controls the substrate processing apparatus to perform the following steps: (A) developing the substrate after an exposure process and before completion of a pattern of the metal-containing resist to remove unexposed portions of the film and form recesses on the substrate using the metal-containing resist; and (B) supplying the reaction control fluid to the substrate after step (A) and before completion.

2. The substrate processing apparatus according to claim 1, further comprising a heating unit that heats the substrate and also serves as the supply unit, wherein the control unit controls the substrate processing apparatus to further perform the steps of (C) supplying the reaction adjusting fluid to the substrate after the exposure process and before the completion, and heating the substrate at a temperature below the boiling point of the solvent of the metal-containing resist.

3. The substrate processing apparatus according to claim 1, wherein the recess exposes an underlying film of the metal-containing resist coating.

4. The substrate processing apparatus according to claim 1, wherein the depth of the recess is less than the thickness of the metal-containing resist coating.

5. A substrate processing apparatus according to any one of claims 1 to 4, wherein the developing unit has a fluid supply section that supplies a developing fluid, which is a non-liquid fluid having a developing action, to the substrate, and the (A) step supplies the developing fluid to the substrate to form the recess.

6. The substrate processing apparatus according to claim 5, wherein the control unit controls the substrate processing apparatus to further execute a step (D) of heating the substrate after the step (A) and before the completion, and the heating of the substrate in the step (D) is performed within the processing space of the development unit in which the substrate is located when the recess is formed in the step (A).

7. A substrate processing apparatus according to any one of claims 1, 2 and 4, further comprising another developing unit for developing a substrate on which a coating of chemically amplified resist has been formed, wherein the (A) step is carried out in the developing unit for the metal-containing resist to form a recess smaller than the target dimension, and a process of etching the underlying film of the metal-containing resist coating carried out on the substrate after the (B) step is carried out to remove the portion of the recess larger than the target dimension.

8. A substrate processing method comprising: (A) developing a substrate having a metal-containing resist film formed thereon after exposure processing and before completion of the pattern of the metal-containing resist to remove unexposed portions of the film and form recesses on the substrate using the metal-containing resist; and (B) supplying a reaction adjusting fluid to the substrate after the (A) step and before completion of the pattern, which promotes a curing reaction of the metal-containing resist.

9. The substrate processing method according to claim 8, further comprising the step of (C) supplying the reaction adjusting fluid to the substrate after the exposure process and before the completion, and heating the substrate at a temperature below the boiling point of the solvent of the metal-containing resist.

10. The substrate processing method according to claim 8, wherein the recess exposes an underlying film of the metal-containing resist coating.

11. The substrate processing method according to claim 8, wherein the depth of the recess is less than the thickness of the metal-containing resist film.

12. A substrate processing method according to any one of claims 8 to 11, wherein step (A) forms the recess by supplying a developing fluid, which is a non-liquid fluid having a developing action, to the substrate.

13. The substrate processing method according to claim 12, further comprising the step of (D) heating the substrate after the step (A) and before the completion, wherein the heating of the substrate in the step (D) is carried out in a processing space in which the substrate is located when the recess is formed in the step (A).

14. A substrate processing method according to any one of claims 8, 9 and 11, wherein the (A) step is carried out in a developing unit of a substrate processing apparatus that is equipped with a developing unit for developing the substrate on which the metal-containing resist coating has been formed and another developing unit for developing a substrate on which a chemically amplified resist coating has been formed, to form the recesses that are smaller than the target dimensions, and a process of etching the underlying film of the metal-containing resist coating that is carried out on the substrate after the (B) step is carried out to remove the portions of the recesses that are larger than the target dimensions.

15. A readable computer storage medium storing a program that runs on a computer of a control unit that controls a substrate processing apparatus to cause the substrate processing apparatus to execute a substrate processing method, the substrate processing method comprising: (A) developing a substrate on which a metal-containing resist film has been formed after an exposure process and before completion of a pattern of the metal-containing resist, thereby removing unexposed portions of the film and forming recesses on the substrate made of the metal-containing resist; and (B) supplying a reaction adjusting fluid that promotes a curing reaction of the metal-containing resist to the substrate after the (A) process and before completion.

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