Resistive memory device using hydrogen ion migration and method for driving same

Abstract

The resistive memory device according to various embodiments of the present invention comprises: a first electrode; an active layer disposed on the first electrode; a barrier layer disposed on the active layer; a hydrogen supply layer disposed on the barrier layer; and a second electrode disposed on the hydrogen supply layer, wherein the concentration of hydrogen included in the barrier layer is lower than the concentration of hydrogen included in the hydrogen supply layer. According to various embodiments of the present invention, the method for driving a resistive memory device including a resistive memory device including a first electrode, an active layer, a barrier layer, a hydrogen supply layer, and a second electrode may comprise a step of inducing a first migration of hydrogen ions by applying a voltage to the second electrode while connecting the first electrode to ground.

Description

Resistive memory device using hydrogen ion migration and its driving method

[0001] Various embodiments of the present invention relate to a resistive memory element utilizing hydrogen ion movement and a method for driving the same.

[0002] Elements released from the insulating film or protective film that constitutes a semiconductor device using oxide diffuse as impurities into the oxide active layer, which is the channel region, and change the electrical characteristics and reliability of the semiconductor device. In particular, if the insulating film or protective film contains hydrogen, the performance characteristics may be improved, but if some of the hydrogen reacts with oxygen in the oxide and generates many carriers, it may rather deteriorate the performance of the device. Since hydrogen has a fast diffusion speed, a large amount of hydrogen can diffuse into the oxide semiconductor even during the device manufacturing process. Since the oxide semiconductor is an n-channel type, hydrogen acts as a carrier and generates electricity.

[0003] The semiconductor device manufacturing process involves tens to hundreds of steps. In particular, thermal treatment or gas introduction processes that increase the diffusion rate during the device manufacturing process can lead to changes in material properties due to reactions such as undesired oxidation or impurity introduction. To prevent hydrogen diffusion into oxide semiconductors, hydrogen diffusion barrier technology is utilized. Conversely, hydrogenation techniques, such as heat treatment in a hydrogen atmosphere, plasma-based hydrogen injection, or doping, are utilized to improve the properties of oxide semiconductor devices. However, hydrogen diffusion barrier formation and hydrogen treatment methods are inefficient in terms of device stability and cost because they require additional oxide semiconductor device processing steps. In particular, hydrogen diffusion is rapid and precise doping concentrations cannot be accurately determined. This makes it difficult to predict or control electrical characteristic changes, such as leakage current, operating speed, and trap formation, resulting from changes in the composition of the oxide semiconductor due to increased or decreased hydrogen. Therefore, a method that can easily control hydrogen diffusion within oxide semiconductors without additional processing steps is needed.

[0004] In various embodiments of the present invention, it is intended to provide a resistance memory device and a driving method thereof that induce a change in resistance of an active layer by inducing hydrogen ion movement through a bias.

[0005] A resistive memory device according to various embodiments of the present invention comprises: a first electrode; an active layer disposed on the first electrode; a barrier layer disposed on the active layer; a hydrogen supply layer disposed on the barrier layer; and a second electrode disposed on the hydrogen supply layer, wherein a hydrogen concentration included in the barrier layer is lower than a hydrogen concentration included in the hydrogen supply layer.

[0006] A method for driving a resistive memory element according to various embodiments of the present invention may include a step of inducing first movement of hydrogen ions by connecting the first electrode to ground and applying a voltage to the second electrode in a resistive memory element including a first electrode, an active layer, a barrier layer, a hydrogen supply layer, and a second electrode.

[0007] The present invention can drive a resistive memory element by inducing the movement of hydrogen ions only by controlling the bias using a simple two-terminal structure. The present invention can be driven by a new mechanism different from existing resistive memories, and by inducing a resistance change in an oxide active layer through the movement of hydrogen ions that are light in weight and have a fast movement speed, it is possible to perform rapid resistance change and low-voltage operation. In addition, since the movement of hydrogen ions is induced only by controlling the bias without going through an additional process and maintaining the existing process method, it is expected that issues due to hydrogen generated during the oxide process will be reduced.

[0008] FIG. 1 is a cross-sectional view of a resistive memory element according to one embodiment of the present invention.

[0009] Figure 2 shows the results of confirming the change in hydrogen concentration and electrical conductivity of the oxide according to the type of insulating film laminated on the oxide active layer.

[0010] FIG. 3 is a drawing for explaining a method for driving a resistive memory element according to one embodiment of the present invention.

[0011] Figure 4 shows the results confirming that a resistive memory element is implemented according to bias application.

[0012] Hereinafter, various embodiments of this document are described with reference to the attached drawings. The embodiments and terminology used herein are not intended to limit the technology described in this document to specific embodiments, but should be understood to encompass various modifications, equivalents, and / or alternatives of the embodiments.

[0013] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

[0014]

[0015] First, a resistive memory element according to one embodiment of the present invention will be described with reference to FIG. 1.

[0016] FIG. 1 is a cross-sectional view of a resistive memory element according to one embodiment of the present invention.

[0017] Referring to FIG. 1, a resistive memory element (10) according to an embodiment of the present invention may include a first electrode (100), an active layer (200), a barrier layer (300), a hydrogen supply layer (400), and a second electrode (500). The resistive memory element (10) of the present invention has a two-terminal structure and may be driven by utilizing the movement of hydrogen ions induced in the active layer (140). In addition, the structure of the resistive memory element (10) of FIG. 1 may be a horizontal structure in which the first electrode (100), the active layer (200), the barrier layer (300), the hydrogen supply layer (400), and the second electrode (500) are arranged horizontally.

[0018] The first electrode (100) may be made of a low-resistivity metal material such as one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), palladium (Pd), platinum (Pt), titanium (Ti), nickel (Ni), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0019] The active layer (200) may be disposed on the first electrode (100). The active layer (200) may include nanowires, nanoparticles, organic materials, hybrid materials, etc. Specifically, examples of materials that may be used as the active layer (200) include IGZO, ITZO, ZnO, HfOx, GaN, Si, SiGe, CdS, V2O5, NiO, C, GaAs, SiC, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgSe, HgTe, CuAls, AlInP, AlGaAs, AlInAs, AlGaSb, AlInSb, GaInP, GaInAs, GaInSb, GaPAs, GaAsSb, InPAs, InAsSb, etc.

[0020] The thickness of the active layer (200) may be 25 to 80 nm.

[0021] A barrier layer (300) may be disposed between the active layer (200) and the hydrogen supply layer (400). The barrier layer (300) may contain hydrogen. The hydrogen concentration contained in the barrier layer (300) may be lower than the hydrogen concentration contained in the hydrogen supply layer (400).

[0022] The barrier layer (300) can prevent hydrogen from being physically injected into the active layer (200) and causing a large change in resistance. That is, the barrier layer (300) can prevent the physical injection of hydrogen into the active layer (200). The barrier layer (300) not only prevents the physical injection, but also can act as a bridge for the movement of hydrogen ions through a bias. Therefore, the barrier layer (300) may be an insulating film material that can sufficiently block the physical injection of hydrogen without inducing a change in the resistance of the active layer (200) when laminated on the active layer (200). For example, the barrier layer (300) may include silicon oxide (SiOx) that contains relatively less hydrogen than the hydrogen supply layer (400).

[0023] Meanwhile, when the resistance memory element (10) is driven, hydrogen ions move from the hydrogen supply layer (400) to the active layer (200) by bias and pass through the barrier layer (300). At this time, the bandgap of the barrier layer (300) must be sufficiently large. For this purpose, the thickness of the barrier layer (300) may be 5 to 10 nm.

[0024] The hydrogen supply layer (400) may be placed on the barrier layer (300). The hydrogen supply layer (400) may contain hydrogen. The hydrogen supply layer (400) may be 10 20 atoms / cm 3 10 inland 22 atoms / cm 3 It can include a hydrogen concentration. When the resistance memory element (10) is driven, hydrogen ions in the hydrogen supply layer (400) can move to the active layer (200) by bias.

[0025] The hydrogen supply layer (400) may be an insulating film containing hydrogen. Specifically, the hydrogen supply layer (400) may include silicon nitride (SiNx).

[0026] The second electrode (500) may be placed on the hydrogen supply layer (400). The second electrode (500) may be made of a low-resistivity metal material, such as one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), palladium (Pd), platinum (Pt), titanium (Ti), nickel (Ni), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0027] The resistance memory element (10) of the present invention can induce a change in the resistance state by inducing hydrogen ion movement in the active layer (200). Specifically, the first resistance state can be exhibited in which the first electrode (100) is connected to the ground, a voltage is applied to the second electrode (500), and the active layer (200) is set to a low resistance state. Specifically, in the first resistance state, hydrogen ions of the hydrogen supply layer (400) can move to the active layer (200) through the barrier layer (300) along the electric field. Therefore, the hydrogen ions that have moved to the active layer (200) can act as a donor and exhibit a low resistance state.

[0028] Thereafter, the second electrode (500) is connected to the ground, and a voltage is applied to the first electrode (100), so that the active layer (200) can exhibit a second resistance state in which it is reset to a high resistance state. Specifically, in the second resistance state, the hydrogen ions that have moved to the active layer (200) can move to the hydrogen supply layer (400) through the barrier layer (300) only when an electric field is applied due to the high band gap of the barrier layer (300). Therefore, when a bias in the opposite direction is applied, the hydrogen ions can move to the hydrogen supply layer (400) again, so that the active layer (200) can exhibit a high resistance state.

[0029] These state changes can be used to perform data writing or data reading.

[0030] In this way, the present invention can drive a resistive memory element by inducing the movement of hydrogen ions only by controlling the bias using a simple 2-terminal structure. The present invention can be driven by a new mechanism different from the existing resistive memory, and by inducing a change in the resistance of the oxide active layer through the movement of hydrogen ions that are light in weight and have a fast movement speed, it is possible to perform a fast operation of the resistance change and a low-voltage operation. In addition, since the movement of hydrogen ions is induced only by controlling the bias without going through an additional process and maintaining the existing process method, it is expected that issues due to hydrogen generated during the oxide process will be reduced.

[0031]

[0032] Hereinafter, a method for manufacturing a resistance memory element according to various embodiments of the present invention will be described.

[0033] First, a thin film for forming a hydrogen supply layer (400) can be manufactured. Specifically, a SiNx thin film can be manufactured as the hydrogen supply layer (400). The SiNx thin film can be formed through PECVD or PEALD. The hydrogen content of the hydrogen supply layer (400) can be controlled by the content, ratio, temperature, and power of the precursor injected during thin film formation. At this time, NH3 can be used as the hydrogen precursor. More specifically, the SiNx thin film can be manufactured at a temperature of 200 to 350°C using SiH4 and NH3 precursors. Referring to the left drawing of FIG. 2, the SiNx thin film has a hydrogen concentration of 10 20 atoms / cm 3 10 inland 22 atoms / cm 3 May include:

[0034] Next, a thin film for forming a barrier layer (300) can be manufactured. Specifically, a SiOx thin film can be manufactured as the barrier layer (300). The SiOx thin film can be manufactured using SiH4 and N2O precursors. The hydrogen content of the barrier layer (300) can be controlled by the content, ratio, temperature, and power of the precursors injected during thin film formation. Referring to the left drawing of Fig. 2, SiOx contains a relatively low concentration of hydrogen compared to SiNx.

[0035] Next, after preparing the active layer (200), a barrier layer (300) may be first laminated on the active layer (200), and then a hydrogen supply layer (400) may be laminated on the barrier layer (300). For example, referring to the right drawing of FIG. 2, when a SiNx hydrogen supply layer containing a large amount of hydrogen is directly laminated on an active layer (200) containing IGZO, it may be difficult to implement a resistance memory element because the hydrogen is physically injected and the resistance changes significantly. Meanwhile, referring to the right drawing of FIG. 2, when a SiOx barrier layer is laminated on an active layer (200) containing IGZO, it was confirmed that the change in the electrical conductivity of the active layer (200) was small, and it can be seen that a resistance memory element can be implemented.

[0036]

[0037] Hereinafter, a method for driving a resistive memory element according to various embodiments of the present invention will be described.

[0038] A method for driving a resistive memory element according to various embodiments of the present invention may include a step of connecting the first electrode to ground and applying a voltage to the second electrode to induce first movement of hydrogen ions in a resistive memory element including a first electrode, an active layer, a barrier layer, a hydrogen supply layer, and a second electrode.

[0039] In the step of inducing the first movement, hydrogen ions in the hydrogen supply layer can move to the active layer. Specifically, in the step of inducing the first movement, the first electrode can be connected to the ground, and a voltage can be applied to the second electrode so that the active layer can exhibit a first resistance state in which it is set to a low resistance state. In the first resistance state, hydrogen ions in the hydrogen supply layer can move to the active layer through the barrier layer along the electric field. Therefore, the hydrogen ions that have moved to the active layer can act as donors and exhibit a low resistance state.

[0040] After the step of inducing the first movement, a step of inducing the second movement of hydrogen ions may be further included. In the step of inducing the second movement, the second electrode may be connected to ground, and a voltage may be applied to the first electrode to reset the active layer to a high resistance state, thereby exhibiting a second resistance state. Specifically, in the second resistance state, the hydrogen ions that have moved to the active layer can only move to the hydrogen supply layer through the barrier layer when an electric field is applied due to the high band gap of the barrier layer. Therefore, by applying a bias in the opposite direction, the hydrogen ions can move to the hydrogen supply layer again, thereby exhibiting a high resistance state in the active layer.

[0041] These state changes can be used to perform data writing or data reading.

[0042]

[0043] Hereinafter, the present invention will be described in detail by way of examples. However, the following examples are only intended to illustrate the present invention, and the present invention is not limited to the following examples.

[0044]

[0045] Example

[0046] A resistive memory device was implemented using a device having the structure of Fig. 1. In the device used in the experiment, the first and second electrodes were formed of gold (Au), and the active layer was formed with a thickness of 40 nm including InGaZnO. The barrier layer was formed with a thickness of 8 nm including silicon oxide (SiOx). The hydrogen supply layer was formed with a thickness of 6 nm including oxynitride (SiNx). In addition, the hydrogen concentration included in the hydrogen supply layer was 10 20 atoms / cm 3 It was.

[0047] The first electrode was connected to ground, and a voltage of 5 V was applied to the second electrode. As a result, as shown in Fig. 4, it was confirmed that the hydrogen ions of the hydrogen supply layer moved to the active layer, thereby exhibiting the first resistance state in which the active layer was set to a low resistance state.

[0048] Next, the second electrode was connected to ground, and a voltage of 5 V was applied to the first electrode. As a result, as shown in Fig. 4, it was confirmed that the hydrogen ions in the active layer were moved back to the hydrogen supply layer, thereby exhibiting a second resistance state in which the active layer was reset to a high resistance state.

[0049] That is, it was confirmed that application to resistance memory is possible by inducing the movement of hydrogen ions only by bias control as shown in Fig. 4.

[0050]

[0051] The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to just one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by those skilled in the art to which the embodiments pertain. Therefore, the contents related to such combinations and modifications should be construed as falling within the scope of the present invention.

[0052] In addition, although the above description focuses on embodiments, these are merely examples and do not limit the present invention. Those skilled in the art to which the present invention pertains will appreciate that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present embodiments. For example, each component specifically shown in the embodiments can be modified and implemented. In addition, differences related to such modifications and applications should be interpreted as being included within the scope of the present invention defined in the appended claims.

[0053] [National Research and Development Project Supporting This Invention]

[0054] [Project ID] 1711191520

[0055] [Assignment Number] 2023030112

[0056] [Ministry Name] Ministry of Science and ICT

[0057] [Name of Project Management (Specialist) Institution] National Research Foundation of Korea

[0058] [Research Project Name] Individual Basic Research (Ministry of Science and ICT)

[0059] [Research Project Title] Study of Memory Effects Implemented with Asymmetric Local Energy Levels for Multilayer Perceptron Implementation

[0060] [Name of the project performing organization] Daegu Gyeongbuk Institute of Science and Technology

[0061] [Research Period] March 1, 2023 - February 29, 2024

[0062] [National Research and Development Project Supporting This Invention]

[0063] [Project ID] 1711201679

[0064] [Assignment Number] 2023010248

[0065] [Ministry Name] Ministry of Science and ICT

[0066] [Name of Project Management (Specialist) Institution] Daegu Gyeongbuk Institute of Science and Technology

[0067] [Research Project Name] Daegu Gyeongbuk Institute of Science and Technology Research Operational Expenses Support (Main Project Expenses)

[0068] [Research Project Name] Neuromorphic Device Technology Research for Intelligent Semiconductor Development

[0069] [Name of the project performing organization] Daegu Gyeongbuk Institute of Science and Technology

[0070] [Research Period] January 1, 2023 - December 31, 2023

Claims

1. First electrode; An active layer disposed on the first electrode; A barrier layer disposed on the above active layer; A hydrogen supply layer disposed on the barrier layer; and Including a second electrode disposed on the hydrogen supply layer, A resistance memory element characterized in that the hydrogen concentration included in the barrier layer is lower than the hydrogen concentration included in the hydrogen supply layer.

2. In paragraph 1, The above hydrogen supply layer is 10 20 atoms / cm 3 10 inland 22 atoms / cm 3 A resistive memory element characterized by including a hydrogen concentration of .

3. In paragraph 1, A resistance memory device, characterized in that the hydrogen supply layer comprises SiNx.

4. In paragraph 1, A resistive memory device characterized in that the barrier layer comprises SiOx.

5. In paragraph 1, A resistive memory device, characterized in that the active layer comprises at least one selected from the group consisting of IGZO, ITZO, ZnO, and HfOx.

6. A resistance memory device according to claim 1, characterized in that the thickness of the barrier layer is 5 to 10 nm.

7. In paragraph 1, A resistance memory element characterized in that the above resistance memory element has a two-terminal structure.

8. In paragraph 1, A first resistance state in which the first electrode is connected to ground and a voltage is applied to the second electrode so that the active layer is set to a low resistance state; and A resistance memory element characterized in that the second electrode is connected to ground and a voltage is applied to the first electrode to indicate a second resistance state in which the active layer is reset to a high resistance state.

9. In paragraph 8, In the above first resistance state, A resistance memory device characterized in that hydrogen ions of the hydrogen supply layer move to the active layer.

10. In paragraph 8, In the above second resistance state, A resistive memory device characterized in that hydrogen ions of the active layer move to the hydrogen supply layer.

11. In a resistance memory device including a first electrode, an active layer, a barrier layer, a hydrogen supply layer, and a second electrode, A method for driving a resistive memory element, comprising the step of connecting the first electrode to ground and applying a voltage to the second electrode to induce a first movement of hydrogen ions.

12. In paragraph 11, In the step of inducing the above first movement, A method for driving a resistance memory element, characterized in that hydrogen ions of the hydrogen supply layer move to the active layer.

13. In paragraph 11, After the step of inducing the above first movement, A method for driving a resistive memory element, further comprising the step of connecting the second electrode to ground and applying a voltage to the first electrode to induce a second movement of hydrogen ions.

14. In paragraph 13, In the step of inducing the above second movement, A method for driving a resistive memory element, characterized in that hydrogen ions of the active layer move to the hydrogen supply layer.

15. In paragraph 11, In the step of inducing the above first movement, A method for driving a resistance memory element, wherein the above active layer is set to a low resistance state.

16. In paragraph 13, In the step of inducing the above second movement, A method for driving a resistive memory element, wherein the above active layer is reset to a high resistance state.

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