Back contact cell, manufacturing method therefor and photovoltaic module

Abstract

The present application relates to the technical field of photovoltaics. Disclosed are a back contact cell, a manufacturing method therefor and a photovoltaic module, to reduce the reverse breakdown voltage of back contact cells. The back contact cell comprises a semiconductor substrate, first doped regions, second doped regions and at least one conductive semiconductor structure; the first doped regions and second doped regions of opposite conductivity types are alternately distributed at intervals on a backlight surface side of the semiconductor substrate; each conductive semiconductor structure comprises a first conductive semiconductor part and a second conductive semiconductor part; each first conductive semiconductor part is located in a gap region between a first doped region and a second doped region, and the conductivity type of the first conductive semiconductor part is opposite to the conductivity type of one of the first doped region and the second doped region; only part of each first doped region and only part of each second doped region are at least separately and electrically connected to a first conductive semiconductor part; each second conductive semiconductor part is arranged above the part of a first doped region and / or a second doped region facing away from the semiconductor substrate.

Description

Back contact cell and manufacturing method thereof, and photovoltaic module Technical Field

[0001] The present application relates to the field of photovoltaic technology, and in particular to a back-contact cell and a manufacturing method thereof, and a photovoltaic module. Background Art

[0002] A back-contact cell is a solar cell with no electrodes on the light-facing side of the cell. Instead, both the positive and negative electrodes are located on the backside of the cell. This reduces shading of the cell by the electrodes, increases the cell's short-circuit current, and improves the cell's energy conversion efficiency. Specifically, in existing back-contact cells, two doped layers of opposite conductivity, located on the backside, are partially separated by intermittent spacing regions to reduce the reverse breakdown voltage of the back-contact cell and mitigate the risk of hot spots on the module side.

[0003] However, from the perspective of the component, the two doping layers with opposite conductivity types are completely isolated, which will cause the back-contact cell to have a higher reverse breakdown voltage, and thus cause the photovoltaic modules including the existing back-contact cells to have a higher risk of hot spots during actual operation. Summary of the Invention

[0004] The purpose of the present application is to provide a back-contact cell and its manufacturing method, and a photovoltaic module, so as to locally electrically connect a first doping region and a second doping region of opposite conductivity types through a conductive semiconductor structure, thereby effectively reducing the reverse breakdown voltage of the back-contact cell.

[0005] In order to achieve the above objectives, in a first aspect, the present application provides a back-contact battery.

[0006] A back-contact battery according to the first aspect of the present application comprises: a semiconductor substrate, a first doping region, a second doping region, and at least one conductive semiconductor structure. The first doping region and the second doping region are alternately spaced and distributed on the backlight side of the semiconductor substrate, and the first doping region and the second doping region have opposite conductivity types. Along the arrangement direction of the first doping region and the second doping region, the region between the first doping region and the second doping region is a spacing region; wherein the conductive semiconductor structure comprises a first conductive semiconductor portion and a second conductive semiconductor portion in electrical contact; the first conductive semiconductor portion is located in the spacing region, and the conductivity type of the first conductive semiconductor portion is opposite to the conductivity type of one of the first doping region and the second doping region; only part of the first doping region and only part of the second doping region are respectively electrically connected to at least the first conductive semiconductor portion; the second conductive semiconductor portion is arranged above the portion of the first doping region and / or the second doping region facing away from the semiconductor substrate.

[0007] When the above technical solution is adopted, the first doping region and the second doping region of opposite conductivity types are alternately distributed on the backlight side of the semiconductor substrate to effectively shunt carriers when the back contact battery is in a working state, which is conducive to the formation of photocurrent. Secondly, the back contact battery provided by the present application also includes at least one conductive semiconductor structure at least partially located between the first doping region and the second doping region. Based on this, since each conductive semiconductor structure has conductive properties, and the conductive type of the conductive semiconductor structure is opposite to the conductive type of one of the first doping region and the second doping region, when the conductive semiconductor structure is electrically in contact with part of the first doping region and part of the second doping region respectively, the first doping region and the second doping region can be electrically connected by creating a local leakage point to form a built-in diode with a lower reverse breakdown voltage, which is conducive to having a lower reverse breakdown voltage when the back contact battery is blocked.

[0008] In addition, only part of the first doping region and only part of the second doping region are respectively in electrical contact with at least one conductive semiconductor structure. In other words, part of the first doping region and the corresponding part of the second doping region are respectively in electrical contact with at least one conductive semiconductor structure, while the remaining areas of the first doping region and the corresponding areas of the second doping region are still physically separated by insulating trenches or insulating materials, etc., to prevent the leakage current of the back contact battery under normal working conditions from being large due to the conductive semiconductor structure being provided between all the areas of the first doping region and the second doping region, thereby causing the working efficiency of the back contact battery to be low, and to ensure that the photovoltaic module including the back contact battery provided by the present application has a high photoelectric conversion efficiency in the forward voltage region. Secondly, the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, which can prevent the strict requirement of etching accuracy in order to obtain only a conductive semiconductor structure located only between the first doping region and the second doping region, thereby reducing the difficulty of etching. At the same time, it can also ensure that the first doping region can be locally electrically connected through the conductive semiconductor structure. Secondly, regardless of whether the corresponding setting mode of the second conductive semiconductor part is an insulating setting or an electrical setting, the second conductive semiconductor part can participate in the actual carrier recombination effect through the first conductive semiconductor part, that is, the existence of the second conductive semiconductor part can increase the leakage current of the first doped region and the second doped region through a single conductive semiconductor structure to a certain extent, thereby facilitating the same purpose of reducing the risk of hot spots when the conductive semiconductor structure has a relatively small size. It can provide another adjustment factor for adjusting the conductive semiconductor structure under the premise of reducing the risk of hot spots and ensuring high working efficiency, which is conducive to improving the applicability of the back-contact battery provided in this application in different application fields.

[0009] As a possible implementation, the first and second conductive semiconductor portions have the same conductivity type and are continuous and integral. In this case, the first and second conductive semiconductor portions can be manufactured simultaneously using the same process, thereby reducing the difficulty of manufacturing the conductive semiconductor structure, simplifying the manufacturing process of the conductive semiconductor structure, and improving the manufacturing efficiency of the back-contact cell.

[0010] As one possible implementation, the contact surface between the conductive semiconductor structure and one of the first and second doped regions, which has a conductivity type opposite to that of the conductive semiconductor structure, includes a lateral effective electrical contact surface; the height of the lateral effective electrical contact surface is a lateral effective electrical contact height Z; and the lateral effective electrical contact surface extends in a direction away from the backlight surface of the semiconductor substrate parallel to the thickness of the semiconductor substrate. In this case, the lateral morphology of the conductive semiconductor structure and the first and second doped regions, which has a conductivity type opposite to that of the conductive semiconductor structure, is relatively regular, which reduces the manufacturing difficulty of the conductive semiconductor structure and improves the yield of back-contact cells.

[0011] As a possible implementation, the first doped region and the second doped region each include multiple strip-shaped doped regions. The strip-shaped doped regions included in the first doped region and the strip-shaped doped regions included in the second doped region are parallel and spaced apart. The first conductive semiconductor portion included in the conductive semiconductor structure is located between two adjacent strip-shaped doped regions belonging to the first doped region and the second doped region, respectively. The width direction of the conductive semiconductor structure is parallel to the extension direction of the strip-shaped doped regions.

[0012] As a possible implementation, when the first doping region and the second doping region are arranged in an interdigitated, alternating pattern, each of the first doping region and the second doping region includes a plurality of strip-shaped doping regions and at least one connection region; the strip-shaped doping regions included in the first doping region and the strip-shaped doping regions included in the second doping region are arranged in parallel and in an alternating pattern; each connection region is electrically connected to a corresponding strip-shaped doping region of the same conductivity type; and the extension direction of the connection region is different from the extension direction of the strip-shaped doping region. Furthermore, the first conductive semiconductor portion included in at least one conductive semiconductor structure is located between two adjacent strip-shaped doping regions belonging to the first doping region and the second doping region, respectively, and the width direction of the conductive semiconductor structure is parallel to the extension direction of the strip-shaped doping regions; and / or the first conductive semiconductor portion included in at least one conductive semiconductor structure is located between a strip-shaped doping region included in one of the first doping region and the second doping region and an adjacent connection region included in the other, and the width direction of the conductive semiconductor structure is parallel to the distribution direction of the strip-shaped doping regions of opposite conductivity type.

[0013] Another back-contact cell according to the first aspect of the present application comprises: a semiconductor substrate, a first doped region, a second doped region, and at least one conductive semiconductor structure. Each conductive semiconductor structure is at least partially located between the first doped region and the second doped region, and only a portion of the first doped region and only a portion of the second doped region are respectively in electrical contact with at least one conductive semiconductor structure. The first doped region and the second doped region have opposite conductivity types, and the conductive semiconductor structure has an opposite conductivity type to that of one of the first doped region and the second doped region. The first doped region and the second doped region each include a plurality of strip-shaped doped regions and at least one connection region; the strip-shaped doped regions included in the first doped region and the strip-shaped doped regions included in the second doped region are parallel and alternately distributed on the backlight side of the semiconductor substrate; each connection region is electrically connected to a corresponding strip-shaped doped region of the same conductivity type as itself; and the extension direction of the connection region is different from the extension direction of the strip-shaped doped region. At least a portion of the at least one conductive semiconductor structure is located between a strip-shaped doped region included in one of the first doped region and the second doped region and an adjacent connection region included in the other. Another back-contact battery adopting the first aspect is intended to locally electrically connect a first doped region and a second doped region of opposite conductivity types through a conductive semiconductor structure, thereby effectively reducing the reverse breakdown voltage of the back-contact battery. At the same time, by reasonably setting the width of each conductive semiconductor structure along the extension direction of the spacing region, the leakage loss of the back-contact battery is effectively controlled, thereby making the back-contact battery have higher working efficiency.

[0014] When the above technical solution is adopted, the first doping region and the second doping region of opposite conductivity types are distributed on the backlight side of the semiconductor substrate to effectively shunt carriers when the back contact battery is in a working state, which is conducive to the formation of photocurrent. Secondly, the back contact battery provided by the present application also includes at least one conductive semiconductor structure at least partially located between the first doping region and the second doping region. Based on this, since each conductive semiconductor structure has conductive properties, and the conductive type of the conductive semiconductor structure is opposite to the conductive type of one of the first doping region and the second doping region, when the conductive semiconductor structure is electrically in contact with a part of the first doping region and a part of the second doping region respectively, the first doping region and the second doping region can be electrically connected by creating a local leakage point to form a built-in diode with a lower reverse breakdown voltage, which is conducive to making the back contact battery have a lower reverse breakdown voltage when it is blocked.

[0015] In addition, only portions of the first doped region and only portions of the second doped region are respectively in electrical contact with the at least one conductive semiconductor structure. In other words, portions of the first doped region and corresponding portions of the second doped region are respectively in electrical contact with at least one conductive semiconductor structure, while the remaining portions of the first doped region and corresponding portions of the second doped region are still physically isolated by insulating trenches or insulating materials. This prevents the back-contact cell from experiencing a large leakage current under normal operating conditions due to the presence of conductive semiconductor structures between all regions of the first doped region and the second doped region, thereby preventing the back-contact cell from having a low operating efficiency due to the presence of conductive semiconductor structures between all regions of the first doped region and the second doped region. This ensures that the photovoltaic module including the back-contact cell provided in this application has a high photoelectric conversion efficiency in the forward voltage region. At least a portion of the at least one conductive semiconductor structure is located between a strip-shaped doped region included in one of the first doped region and the second doped region and an adjacent connection region included in the other. This facilitates the regulation of the reverse breakdown voltage and forward leakage loss of the back-contact cell by adjusting the size of the conductive semiconductor structure according to actual application scenarios, thereby improving the operating performance of the back-contact cell provided in this application.

[0016] As one possible implementation, the region between the first doped region and the second doped region is a spacer region. The conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion in electrical contact. The first conductive semiconductor portion is located in the spacer region, and the second conductive semiconductor portion is disposed above a portion of the first doped region and / or the second doped region facing away from the semiconductor substrate.

[0017] The above technical solution can avoid the need for strict etching accuracy to obtain only a conductive semiconductor structure located between the first doped region and the second doped region, thereby reducing the etching difficulty. At the same time, it can also ensure that the first doped region can be locally electrically connected through the conductive semiconductor structure.

[0018] As a possible implementation, in the first doping region, the width of the strip-shaped doping region in contact with the conductive semiconductor structure is D2; in the second doping region, the width of the strip-shaped doping region in contact with the conductive semiconductor structure is D3. Furthermore, in the second conductive semiconductor portion, the width of the portion disposed above the strip-shaped doping region included in the first doping region and / or the strip-shaped doping region included in the second doping region, along the width direction of the strip-shaped doping region, is X1. In the above case, when the second conductive semiconductor portion is disposed above the strip-shaped doping region included in the first doping region, 0.1D2≤X1<0.5D2; and / or, when the second conductive semiconductor portion is disposed above the strip-shaped doping region included in the second doping region, 0.1D3≤X1<0.5D3.

[0019] When adopting the above technical solution, taking the example of a second conductive semiconductor portion being arranged above the strip-shaped doped region included in the first doped region along the width direction of the strip-shaped doped region as an example, the carriers collected by the first doped region need to be conducted out through the electrode structure that is in ohmic contact with itself. Based on this, along the width direction of the strip-shaped doped region, a portion of the strip-shaped doped region included in the first doped region along its own extension direction needs to be in direct ohmic contact with the electrode structure, and this ohmic contact area will occupy a certain width. In this case, when 0.1D2≤X1<0.5D2, it can prevent the strict etching accuracy required to form the second conductive semiconductor portion with a smaller setting width due to the smaller setting width X1 corresponding to the second conductive semiconductor portion, thereby reducing the etching difficulty. At the same time, it can also prevent the situation where the setting method corresponding to the second conductive semiconductor portion is an electrical setting, where the setting width X1 is small, resulting in a smaller effective electrical contact area corresponding to the conductive semiconductor structure, resulting in poor effect in reducing the risk of hot spots by providing a conductive semiconductor structure in a back-contact cell. Furthermore, this prevents the electrode structure from being unable to form ohmic contact with the strip-shaped doped regions included in the first doped region due to the larger width X1 of the second conductive semiconductor portion, thereby ensuring that the current collected by the first doped region can be conducted through the electrode structure, thereby facilitating the formation of photocurrent. Furthermore, the beneficial effects of 0.1D3 ≤ X1 < 0.5D3 are similar to those of 0.1D2 ≤ X1 < 0.5D2 and are not further elaborated here.

[0020] As a possible implementation, in the second conductive semiconductor portion, the portion disposed above the strip doping regions included in the first doping region and / or the strip doping regions included in the second doping region, along the width direction of the strip doping regions, has a width X1; along the extension direction of the spacing region, the width of the conductive semiconductor structure is W. When the second conductive semiconductor portion and the corresponding strip doping regions are electrically connected, X1 ≤ W ≤ 40X1, and / or the effective electrical contact height of the side surface electrically connected to the first doping region and the second doping region through the conductive semiconductor structure is Z, and 1,500th of X1 ≤ Z ≤ 1,400th of X1.

[0021] In the case of adopting the above technical solution, when the setting mode between the second conductive semiconductor part and the corresponding strip-shaped doped region is an electrical setting, the effective electrical contact area corresponding to the conductive semiconductor structure includes not only the effective electrical contact area between the side wall of the conductive semiconductor structure and the side of the first doped region or the second doped region, but also the contact area between the second conductive semiconductor part and the corresponding strip-shaped doped region. Based on this, the size of the effective electrical contact area can be adjusted by adjusting the numerical value of at least one of X1, W and Z, thereby affecting the reverse breakdown voltage corresponding to the back contact battery and the size of the leakage current under normal working conditions. In this case, when X1≤W≤40X1, the width W of the conductive semiconductor structure has a large optional range. By adjusting the width W of the conductive semiconductor structure, the reverse breakdown voltage corresponding to the back contact battery and the leakage current under normal working conditions can be adjusted, which is beneficial to improving the applicability of the back contact battery provided in the embodiment of the present application in different application scenarios. In addition, when W is within the above range, it can prevent the high manufacturing precision requirements for the conductive semiconductor structure caused by a small W, which is beneficial to reducing the manufacturing difficulty of the back-contact battery. It can also prevent the small W from causing the reverse breakdown voltage corresponding to the back-contact battery to be reduced to within the operating requirements, resulting in a large value for X1 and / or Z, thereby affecting the formation quality of the electrode structure, etc., and improving the yield of the back-contact battery. At the same time, it can also prevent the large leakage current corresponding to the single conductive semiconductor structure caused by a large W, ensuring that the back-contact battery has high operating performance under normal operation. In addition, the beneficial effects of 1 / 1500 of X1 ≤ Z ≤ 1 / 400 of X1 are similar to the beneficial effects of X1 ≤ W ≤ 40X1, and will not be repeated here.

[0022] As a possible implementation scheme, the width of the conductive semiconductor structure along the extension direction of the spacing area is W; when the corresponding setting mode of the second conductive semiconductor part is an electrical setting, 0.03mm≤X1≤0.2mm; and / or, 0.03mm≤W≤8mm.

[0023] When the above technical solution is adopted, if X1 is within the above range, it can prevent the high manufacturing precision requirements due to the small X1, thereby reducing the difficulty of manufacturing the back contact battery; it can also prevent the small effective electrical contact area corresponding to the conductive semiconductor structure due to the small X1, resulting in poor effect of reducing the risk of hot spots of the back contact battery by setting the conductive semiconductor structure. In addition, it can prevent the electrode structure from being difficult to manufacture and / or the contact resistance between the electrode structure and the strip doping region from being large due to the large X1, which makes the width of the portion of the strip doping region reserved for ohmic contact with the electrode structure along its own width direction small, thereby improving the yield of the back contact battery and the contact performance between the electrode structure and the strip doping region. In addition, the beneficial effects of W within the above range can be referred to in the previous text and will not be repeated here.

[0024] As a possible implementation scheme, when the first conductive semiconductor portion is located between two adjacent strip-shaped doped regions belonging to the first doping region and the second doping region, the width of the strip-shaped doped region corresponding to the conductive semiconductor structure in the first doping region is D2; the width of the strip-shaped doped region corresponding to the conductive semiconductor structure in the second doping region is D3; the width of the spacing region between the first doping region and the second doping region is D1; ​​along the distribution direction of the strip-shaped doped regions of opposite conductivity types, the length of the conductive semiconductor structure is D, and

[0025] When the above technical solution is adopted, the carriers collected by the first doping region and the second doping region need to be led out through the electrode structure that is in ohmic contact with itself. Based on this, along the width direction of the strip doping region, the first doping region and the second doping region include a portion of the strip doping region along its own extension direction that needs to be in direct ohmic contact with the electrode structure, and the ohmic contact area will occupy a certain width. In this case, when This helps prevent the need for strict etching precision to form a conductive semiconductor structure with a smaller width due to the smaller width of the conductive semiconductor structure, thereby reducing the difficulty of etching. It also helps prevent the situation where the conductive semiconductor structure is electrically configured, where the smaller width results in a smaller effective electrical contact area for the conductive semiconductor structure, leading to poor effectiveness in reducing the risk of hot spots in back-contact cells. Furthermore, it helps prevent the electrode structure from being unable to make ohmic contact with the strip-shaped doped regions included in the first and second doped regions due to the larger width of the conductive semiconductor structure, thereby ensuring that the current collected by the first and second doped regions can be conducted through the electrode structure, thereby facilitating the formation of photocurrent.

[0026] As a possible implementation, the first doping region and the second doping region are alternately spaced and arranged in an interdigitated manner; in the first doping region, the width of the strip doping region in contact with the conductive semiconductor structure is D2; in the second doping region, the width of the strip doping region in contact with the conductive semiconductor structure is D3. Furthermore, in the second conductive semiconductor portion, the width of the portion disposed on the strip doping region included in the first doping region and / or the strip doping region included in the second doping region along the extension direction of the strip doping region is X2. In the above case, when the second conductive semiconductor portion is disposed on the strip doping region included in the first doping region, 0.1D2≤X2≤1.2D2; and / or, when the second conductive semiconductor portion is disposed on the strip doping region included in the second doping region, 0.1D3≤X2≤1.2D3.

[0027] In the case of adopting the above technical solution, the following example illustrates a conductive semiconductor structure disposed on a strip-shaped doped region included in the first doped region along the extension direction of the strip-shaped doped region: As previously described, the carriers collected by the first doped region need to be conducted away through the electrode structure in ohmic contact with the first doped region. Furthermore, the extension length of the electrode structure on the strip-shaped doped region included in the first doped region affects the contact resistance between the electrode structure and the first doped region, as well as the ability of the carriers collected by each portion of the strip-shaped doped region included in the first doped region to be conducted away through the electrode structure in a timely manner. Based on this, when 0.1D2≤X2≤1.2D2, the requirement for strict etching accuracy due to the small width X2 of the second conductive semiconductor portion can be avoided, thereby reducing the manufacturing difficulty of the back-contact battery. Furthermore, when the corresponding configuration of the second conductive semiconductor portion is an electrical configuration, the small width X2 results in a small effective electrical contact area corresponding to the conductive semiconductor structure, thereby preventing the conductive semiconductor structure from being less effective in reducing the risk of hot spots in the back-contact battery. Furthermore, this prevents the inability to promptly remove carriers collected along the longitudinal edge of the strip-shaped doped region due to a large distance between the end of the electrode structure and the edge of the strip-shaped doped region along its extension direction, caused by the larger width X2 of the second conductive semiconductor portion. This ensures good performance of the back-contact battery. The beneficial effects of 0.1D3≤X2≤1.2D3 can be referenced in the analysis of the beneficial effects of 0.1D2≤X2≤1.2D2, and will not be further elaborated here.

[0028] As a possible implementation, the first doped regions and the second doped regions are alternately arranged in an interdigitated pattern. Within the first and second doped regions, the connection region in contact with the conductive semiconductor structure has a width of W1. Furthermore, within the second conductive semiconductor portion, the portion extending along the strip-shaped doped region and located above the connection region included in the first doped region and / or the connection region included in the second doped region has a width of X3; 0.1W1≤X3≤0.3W1.

[0029] When the above technical solution is adopted, in actual application, the electrode structure will also be formed above the connection area, and may even make ohmic contact with the connection area. Based on this, the portion of the electrode structure located above the connection area needs to occupy a certain width of the connection area. In this case, when 0.1W1≤X3≤0.3W1, it can prevent the second conductive semiconductor portion from having a small width X3, which would lead to strict etching accuracy requirements for forming a conductive semiconductor structure with a small width, thereby reducing the etching difficulty. At the same time, it can also prevent the second conductive semiconductor portion from having a small width X3, which would result in a small effective electrical contact area corresponding to the conductive semiconductor structure, resulting in poor effect in reducing the risk of hot spots in the back-contact cell by providing a conductive semiconductor structure, when the corresponding configuration method of the second conductive semiconductor portion is an electrical configuration. In addition, it can also prevent the electrode structure from being difficult to form in the small width area of ​​the connection area exposed outside the second conductive semiconductor portion due to a large X3, which is beneficial to reducing the manufacturing difficulty of the electrode structure. It can also prevent the electrode structure from having a small width formed on the connection area, which would lead to a large transmission resistance corresponding to the electrode structure, thereby ensuring that the electrode structure has good transmission performance.

[0030] As a possible implementation, when the conductive semiconductor structure is at least partially located between a strip-shaped doped region included in one of the first doped region and the second doped region and an adjacent connection region included in the other, the width of the connection region belonging to one of the first doped region and the second doped region and in contact with the conductive semiconductor structure is W1; the length of the strip-shaped doped region belonging to the other of the first doped region and the second doped region and in contact with the conductive semiconductor structure is W2; the width of the spacing region between the first doped region and the second doped region is D1. Furthermore, along the width direction of the spacing region, the length of the conductive semiconductor structure is D, and

[0031] In the case of adopting the above technical solution, after the version of the back contact battery is determined, D1, W1 and W2 are fixed values. Based on this, when the conductive semiconductor structure is at least partially located between a strip doping region included in one of the first doping region and the second doping region and the adjacent connection region included in the other, when D is equal to D1, the conductive semiconductor structure located between the strip doping region and the connection region with opposite conductivity types and adjacent to each other can be electrically contacted with the strip doping region and the connection region with opposite conductivity types and adjacent to each other along the arrangement direction of the first doping region and the second doping region, ensuring that the first doping region and the second doping region can be electrically connected through the conductive semiconductor structure; at the same time, the positive projection area of ​​the conductive semiconductor structure on the backlight side can also be precisely controlled to ensure that the hot spot risk corresponding to the back contact battery and the working efficiency under normal operation can accurately meet the working requirements. Secondly, the carriers collected by the first doping region and the second doping region need to be discharged through the electrode structure that is in ohmic contact with itself. Based on this, along the extension direction of the strip doping region, the first doping region and the second doping region include a portion of the strip doping region along the extension direction thereof that needs to be in direct ohmic contact with the electrode structure, and the ohmic contact region will occupy a certain length. In this case, when This helps prevent the need for strict etching accuracy to form a conductive semiconductor structure with a smaller width due to the smaller width of the conductive semiconductor structure above the portion of the first doped region and / or the second doped region that is away from the semiconductor substrate, thereby reducing the difficulty of etching. It also helps prevent the situation where the conductive semiconductor structure is electrically configured, where the smaller width results in a smaller effective electrical contact area for the conductive semiconductor structure, leading to poor results in reducing the risk of hot spots in a back-contact cell by configuring the conductive semiconductor structure. Furthermore, it helps prevent the electrode structure from being unable to make ohmic contact with the strip-shaped doped regions included in the first doped region and the second doped region due to the larger width of the conductive semiconductor structure, thereby ensuring that the current collected by the first doped region and the second doped region can be conducted through the electrode structure, thereby facilitating the formation of photocurrent.

[0032] As a possible implementation, the conductive semiconductor structure has a width W along the extension direction of the spacer region; and the effective electrical contact height at the side of the first doped region and the second doped region electrically connected via the conductive semiconductor structure is Z. When the corresponding configuration of the second conductive semiconductor portion is an insulating configuration, 1 / 160,000 of W ≤ Z ≤ 1 / 25 of W.

[0033] When the above technical solution is adopted, in the actual manufacturing process, corresponding physical spacing layers are formed on the first doping region and the second doping region respectively. The physical spacing layer can be formed when the first doping region and the second doping region are manufactured by a diffusion process, or it can be formed so that the already formed first doping region and the second doping region are not affected by subsequent processes (for example, in order to prevent the already formed first doping region from being inverted when the second doping region is manufactured on the backlight side after the first doping region is formed, a physical spacing layer is formed on its surface). Based on this, the physical spacing layer can be a non-conductive insulating layer. At this time, regardless of whether the conductive semiconductor structure is provided on at least one of the first doping region and the second doping region, the effective electrical contact area between the conductive semiconductor structure and the first doping region and the second doping region is only the effective electrical contact area between the side surfaces of the first doping region and the second doping region and the conductive semiconductor structure, that is, the product of W and Z. In the above case, the reverse breakdown voltage and the leakage current under normal operation of the back contact battery can be adjusted by adjusting the numerical values ​​of W and Z, which is conducive to improving the applicability of the back contact battery provided by the embodiment of the present application in different application scenarios. In other words, if W and Z satisfy the above-mentioned size relationship range, it can prevent the back contact battery from having a large leakage current under normal working conditions due to an unreasonable setting of the proportional relationship between W and Z, which results in a large effective electrical contact area, thereby ensuring that the back contact battery has higher working performance; it can also prevent the back contact battery from having a small reduction in the reaction breakdown voltage of the back contact battery due to an unreasonable setting of the proportional relationship between W and Z, thereby ensuring that the back contact battery has a lower risk of hot spots.

[0034] As a possible implementation, the first doped region, the second doped region, and a portion of the conductive semiconductor structure are all formed within the semiconductor substrate, and the surface of each of the first doped region, the second doped region, and the conductive semiconductor structure facing away from the light-facing surface of the semiconductor substrate is flush with the surface of the corresponding region on the backlight side of the semiconductor substrate. In this case, the contact surface between the conductive semiconductor structure and one of the first doped region and the second doped region having a conductivity type opposite to that of the conductive semiconductor structure comprises a lateral effective electrical contact surface; the height of the lateral effective electrical contact surface is a lateral effective electrical contact height Z, which is equal to the minimum of a first depth and a second depth; the first depth is the depth of the one of the first doped region and the second doped region having a conductivity type opposite to that of the conductive semiconductor structure, and the second depth is the depth of the portion of the conductive semiconductor structure within the semiconductor substrate.

[0035] As a possible implementation, the one of the first and second doped regions having an opposite conductivity type and the conductive semiconductor structure each include a doped semiconductor layer located on a backlit surface of a semiconductor substrate; the contact surface between the one of the first and second doped regions having an opposite conductivity type and the conductive semiconductor structure and the conductive semiconductor structure includes a lateral effective electrical contact surface; the height of the lateral effective electrical contact surface is a lateral effective electrical contact height Z. The lateral effective electrical contact height Z is equal to the minimum of a first depth and a second depth; along an extension direction of the lateral effective electrical contact surface away from the backlit surface of the semiconductor substrate, the first depth is the depth of the lateral effective electrical contact surface corresponding to the one of the first and second doped regions having an opposite conductivity type and the conductive semiconductor structure, and the second depth is the depth of the lateral effective electrical contact surface corresponding to the conductive semiconductor structure.

[0036] When the above technical solution is adopted, regardless of whether the first doped region, the second doped region and the conductive semiconductor structure are all formed in the semiconductor substrate, or the first doped region and the second doped region have a conductivity type opposite to that of the conductive semiconductor structure, and the conductive semiconductor structure includes a doped semiconductor layer formed on the backlight surface of the semiconductor substrate, the size of the effective electrical contact area corresponding to the conductive semiconductor structure can be regulated by adjusting the size of the first thickness and the second thickness (or the first depth and the second depth), and then the leakage current of the first doped region and the second doped region through the conductive semiconductor structure can be adjusted, which is further conducive to achieving a balance between the reverse breakdown voltage and working efficiency corresponding to the back contact battery.

[0037] As a possible implementation scheme, in the case where the first doping region, the second doping region and the conductive semiconductor structure all include a doped semiconductor layer formed on the backlight surface, when the setting height of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure close to the backlight surface of the semiconductor substrate is less than the setting height of the doped semiconductor layer included in the conductive semiconductor structure close to the backlight surface of the semiconductor substrate, and a part of the side surface of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is in electrical contact with the semiconductor substrate, and the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is in electrical contact with the semiconductor substrate, When the other part of the side surface is in electrical contact with the conductive semiconductor structure, the effective electrical contact height Z of the side surface is equal to the thickness of the conductive semiconductor structure; or, when the doped semiconductor layer included in the one of the first doped region and the second doped region with the conductivity type opposite to the conductive semiconductor structure is different from the setting height of the doped semiconductor layer included in the conductive semiconductor structure close to the backlight surface of the semiconductor substrate, and the partial areas of the side surface of the doped semiconductor layer included in the one of the first doped region and the second doped region with the conductivity type opposite to the conductive semiconductor structure corresponding to the conductive semiconductor structure are all in electrical contact with the conductive semiconductor structure, the effective electrical contact height Z of the side surface is equal to the thickness of the one of the first doped region and the second doped region with the conductivity type opposite to the conductive semiconductor structure.

[0038] When the above technical solution is adopted, the effective electrical contact area corresponding to the conductive semiconductor structure can be precisely adjusted according to the different effective electrical contact thicknesses in each case, thereby precisely adjusting the size of the leakage current of the first doped region and the second doped region through the conductive semiconductor structure, thereby improving the yield of the back contact battery.

[0039] As a possible implementation scheme, when the setting height of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure on the backlight side of the semiconductor substrate is less than the setting height of the doped semiconductor layer included in the other one on the backlight side of the semiconductor substrate, and part of the side surface of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is in electrical contact with the semiconductor substrate, along the thickness direction of the semiconductor substrate, in the backlight side, the difference between the height of the regional surface corresponding to the conductive semiconductor structure and the height of the regional surface corresponding to the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is greater than or equal to 0.4 μm and less than or equal to 2 μm.

[0040] When adopting the above technical solution, the example of the doped semiconductor layer included in the first doped region and the conductive semiconductor structure having opposite conductivity types is used for explanation: when forming the doped semiconductor layer included in the first doped region, it is difficult to fill the material of the doped semiconductor layer included in the first doped region at the corner caused by the height difference, which easily makes it difficult for the doped semiconductor layer included in the first doped region to fully contact various parts of the surface of the semiconductor substrate (or, the semiconductor substrate and the conductive semiconductor structure) at the corner. Therefore, the difference between the surface height of the region corresponding to the conductive semiconductor structure on the backlight side and the surface height of the region of the doped semiconductor layer having opposite conductivity type to the conductive semiconductor structure is within the above range. The portion of the doped semiconductor layer included in the first doped region filled at the corner can be staggered with the sidewall of the conductive semiconductor structure having opposite conductivity type to itself, ensuring that the conductive semiconductor structure has a larger lateral effective electrical contact area with the first doped region having opposite conductivity type to itself. When the doped semiconductor layer included in the second doped region and the conductive semiconductor structure have opposite conductivity types, the corresponding beneficial effects are the same as the above effects and are not further described here.

[0041] As a possible implementation solution, the effective electrical contact height of the side surface where the first doped region and the second doped region are electrically connected through the conductive semiconductor structure is Z, and 0.00005 mm ≤ Z ≤ 0.002 mm.

[0042] When the above technical solution is adopted, in the actual application process, due to considerations such as carrier shunting capability and the amount of consumables used, the first doped region and the second doped region included in the back contact battery usually have a reasonable thickness (or depth) range. In addition, the size of the side effective electrical contact height Z will affect the effective electrical contact area corresponding to the conductive semiconductor structure, and thus affect the leakage current size of the first doped region and the second doped region locally conducted through a single conductive semiconductor structure. In this case, the side effective electrical contact height is within the above range, which can prevent the effective electrical contact area corresponding to the conductive semiconductor structure from being too large or too small, resulting in a poor balance between the hot spot risk of the back contact battery and the working efficiency under normal operation. In addition, it can also prevent the side effective electrical contact height from being too large, which leads to a large amount of material used to manufacture the conductive semiconductor structure, which is beneficial to controlling the manufacturing cost of the back contact battery.

[0043] As one possible implementation, a back-contact cell includes multiple conductive semiconductor structures. Adjacent conductive semiconductor structures are spaced apart. In this case, large local leakage current between the first doped region and the second doped region caused by contact between adjacent different conductive semiconductor structures can be prevented.

[0044] As a possible implementation scheme, when the back contact cell is a whole-piece back contact cell, the number of conductive semiconductor structures included in the back contact cell is greater than or equal to 30 and less than or equal to 8000; or, when the back contact cell is a one-N slice back contact cell, the number of conductive semiconductor structures included in the back contact cell is greater than or equal to 30 / N and less than or equal to 8000 / N; N is a positive integer greater than or equal to 2.

[0045] When the above technical solution is adopted, it can be understood that, when the size of each conductive semiconductor structure is fixed, the more conductive semiconductor structures are formed on the backlight side, the larger the sum of the orthographic projection areas of the conductive semiconductor structures on the backlight side. Secondly, within a certain range, the more the number of conductive semiconductor structures, the lower the reverse breakdown voltage of the back contact battery. However, beyond the corresponding range, even if more conductive semiconductor structures are arranged on the backlight side, the change in the reverse breakdown voltage of the back contact battery is small or even no longer changes. When the number of conductive semiconductor structures increases to a larger range, the working efficiency of the back contact battery will decrease with the increase of leakage current. Based on this, when the back contact battery is a whole back contact battery, the number of conductive semiconductor structures included in the back contact battery is set to be greater than or equal to 30 and less than or equal to 8000. This can prevent the reverse breakdown voltage of the back contact battery from being reduced due to the small number of conductive semiconductor structures, thereby ensuring that the hot spot risk of the back contact battery can be reduced to within the working requirements. In addition, it can also prevent the working efficiency of the photovoltaic module including the back contact battery provided by the present application from being affected by the large number of conductive semiconductor structures. As for the beneficial effects of the back contact battery being a one-N slice back contact battery and the number of conductive semiconductor structures included in the back contact battery being greater than or equal to 30 / N and less than or equal to 8000 / N, you can refer to the analysis of the beneficial effects of the back contact battery being a whole-piece back contact battery and the number of conductive semiconductor structures included in the back contact battery being greater than or equal to 30 and less than or equal to 8000 as described above, and no further details will be given here.

[0046] As a possible implementation scheme, when the setting method corresponding to the second conductive semiconductor part is an electrical setting, when the back contact cell is a whole back contact cell, the number of conductive semiconductor structures set on the backlight side is greater than or equal to 30 and less than or equal to 4000; when the back contact cell is a one-N slice back contact cell, the number of conductive semiconductor structures set on the backlight side is greater than or equal to 30 / N and less than or equal to 4000 / N; N is a positive integer greater than or equal to 2.

[0047] When employing the above-described technical solution, all other factors being equal, the effective electrical contact area corresponding to the conductive semiconductor structure is larger when the second conductive semiconductor portion is electrically configured, compared to when the second conductive semiconductor portion is insulated. Based on this, when the second conductive semiconductor portion is electrically configured, and the number of conductive semiconductor structures provided on the backlight side is within the above-described range, this can prevent a small reduction in the reverse breakdown voltage of the back-contact cell due to a small number of conductive semiconductor structures, thereby ensuring that the risk of hot spots in the back-contact cell can be reduced to within operating requirements. Furthermore, this can prevent the poor operating efficiency of the photovoltaic module including the back-contact cell provided herein from being caused by the presence of a large number of conductive semiconductor structures.

[0048] As a possible implementation scheme, when the setting mode corresponding to the second conductive semiconductor part is an insulating setting, when the back contact cell is a whole back contact cell, the number of conductive semiconductor structures set on the backlight side is greater than or equal to 5000 and less than or equal to 8000; when the back contact cell is a one-N slice back contact cell, the number of conductive semiconductor structures set on the backlight side is greater than or equal to 5000 / N and less than or equal to 8000 / N; N is a positive integer greater than or equal to 2.

[0049] In the case of adopting the above technical solution, when other factors are the same, compared with the case where the setting mode corresponding to the second conductive semiconductor part is an electrical setting, when the setting mode corresponding to the second conductive semiconductor part is an insulating setting, the effective electrical contact area corresponding to the conductive semiconductor structure is smaller. Based on this, when the setting mode corresponding to the second conductive semiconductor part is an insulating setting, the reverse breakdown voltage of the back-contact battery can be reduced to the target range by reasonably setting a larger number of conductive semiconductor structures on the backlight side. Based on this, the number of conductive semiconductor structures set on the backlight side is within the above range, which can prevent the reduction in the reverse breakdown voltage of the back-contact battery due to the small number of conductive semiconductor structures, and ensure that the hot spot risk of the back-contact battery can be reduced to within the working requirements. In addition, it can also prevent the poor working efficiency of the photovoltaic module including the back-contact battery provided in the present application due to the setting of more conductive semiconductor structures.

[0050] As a possible implementation solution, the orthographic projection areas of different conductive semiconductor structures on the backlight side are equal.

[0051] When the above-mentioned technical solution is adopted, when the orthographic projection areas of different conductive semiconductor structures on the backlight side are equal, it is beneficial to make the corresponding leakage currents equal after the first doping region and the second doping region are electrically connected to different conductive semiconductor structures, thereby making the reverse breakdown voltages of the built-in diodes arranged in different areas between the first doping region and the second doping region equal, thereby preventing the problem of battery burning due to local heat concentration when the back-contact battery is blocked, and further reducing the hot spot risk of the photovoltaic module including the back-contact battery provided by the present application.

[0052] As a possible implementation, different conductive semiconductor structures are evenly distributed on the backlight side. In this case, the reverse breakdown voltage of the built-in diode formed after the conductive semiconductor structures are provided is equalized between different areas of the first doped region and corresponding areas of the second doped region. This prevents the problem of localized heat concentration that may cause cell burns when the back-contact cell is blocked, further reducing the risk of hot spots in photovoltaic modules including the back-contact cell provided by the application.

[0053] As a possible implementation, different conductive semiconductor structures are distributed in a matrix on the backlight side. Adjacent rows of the matrix-distributed conductive semiconductor structures are aligned or staggered. In this case, the distribution of the different conductive semiconductor structures on the backlight side is relatively regular, and adjacent rows of the matrix-distributed conductive semiconductor structures can be aligned or staggered. This helps reduce the difficulty of manufacturing the conductive semiconductor structures while also ensuring that the conductive semiconductor structures are evenly distributed on the backlight side, further preventing the problem of battery burning due to local heat concentration when the back contact battery is blocked.

[0054] As a possible implementation, when adjacent rows of conductive semiconductor structures are staggered in a matrix pattern, the staggered distance between two adjacent rows of conductive semiconductor structures is equal to half the distance between the geometric centers of two adjacent conductive semiconductor structures in the same row. This helps ensure that the distribution density of the conductive semiconductor structures is roughly the same between different areas of the first doping region and corresponding areas of the second doping region, preventing the problem of back-contact cells being blocked by a long region physically separated by an insulating trench or insulating material, which could cause localized heat concentration and lead to battery burns.

[0055] As a possible implementation scheme, when the configuration mode corresponding to the second conductive semiconductor portion is an insulating configuration, the effective electrical contact area corresponding to at least one conductive semiconductor structure is greater than or equal to 0.000025 mm 2 , and less than or equal to 0.016mm 2 .

[0056] When the above technical solution is adopted, the effective electrical contact area corresponding to at least one conductive semiconductor structure is within the above range, which can prevent the magnitude of the reverse breakdown voltage of the back contact battery that can be reduced by setting the conductive semiconductor structure from being low due to the small effective electrical contact area corresponding to the conductive semiconductor structure, prevent the back contact battery from being burned due to local heat concentration, and effectively reduce the risk of hot spots in the photovoltaic module including the back contact battery provided by the present application; it can also prevent the strict requirements on etching accuracy for forming a smaller conductive semiconductor structure, thereby reducing the difficulty of etching. In addition, it can also prevent the leakage current of the back contact battery under normal working conditions from being large due to the large effective electrical contact area corresponding to the conductive semiconductor structure, further ensuring that the photovoltaic module including the back contact battery provided by the present application has a higher photoelectric conversion efficiency in the forward voltage region; it can also prevent the W and / or Z values ​​from being larger due to the increase in the effective electrical contact area corresponding to the conductive semiconductor structure, thereby further expanding the scope of application of the back contact battery provided by the present application.

[0057] As a possible implementation solution, when the configuration mode corresponding to the second conductive semiconductor portion is an electrical configuration, the effective electrical contact area corresponding to at least one conductive semiconductor structure is greater than or equal to 0.000175 mm 2 , and less than or equal to 1.616mm 2 The beneficial effect of this case is the same as that of the case where the second conductive semiconductor portion is provided in an insulating manner, and the effective electrical contact area corresponding to at least one conductive semiconductor structure is greater than or equal to 0.000025 mm 2 , and less than or equal to 0.016mm 2 The beneficial effects are similar and will not be described here.

[0058] As a possible implementation solution, the orthographic projection area of ​​the portion of at least one conductive semiconductor structure located between the first doping region and the second doping region on the backlight side is S1, the area of ​​the backlight side is S2, and the ratio of S1 to S2 is greater than or equal to 8.5×10 -7 %, and less than or equal to 6.67×10 -1 %.

[0059] When the above technical solution is adopted, the ratio between S1 and S2 is within the above range. This can prevent the magnitude of the reverse breakdown voltage of the back-contact cell, which can be reduced by providing a conductive semiconductor structure, from being too low due to a small S1, thus preventing the back-contact cell from burning due to local heat concentration, and effectively reducing the risk of hot spots in photovoltaic modules including the back-contact cell provided by the present application. It can also prevent the strict requirements for etching accuracy in order to form a smaller conductive semiconductor structure, thereby reducing the difficulty of etching. In addition, it can also prevent the leakage current of the back-contact cell under normal operating conditions from being too high due to a large S1, further ensuring that the photovoltaic module including the back-contact cell provided by the present application has a high photoelectric conversion efficiency in the forward voltage region.

[0060] As a possible implementation solution, the orthographic projection area of ​​the portion of at least one conductive semiconductor structure located between the first doped region and the second doped region on the backlight side is S1, the area of ​​the backlight side is S2, and the ratio of S1 to S2 is greater than or equal to 7.2×10 -6 %, and less than or equal to 4.6×10 -3 %. In this case, the ratio between S1 and S2 has a large optional range. According to the requirements of the back contact battery version, leakage prevention and hot spot risk reduction in the actual application scenario, a suitable solution can be selected, which is conducive to improving the applicability of the back contact battery provided by this application in different application scenarios. In addition, it can also prevent the effective electrical contact area corresponding to a single conductive semiconductor structure from being too small or too large. This effect can be referred to in the previous article and will not be repeated here.

[0061] As a possible implementation solution, the orthographic projection area of ​​the second conductive semiconductor portion on the backlight side is S4, the area of ​​the backlight side is S2, and the ratio of S4 to S2 is greater than 0 and less than or equal to 4.6×10 -3 In this case, it is possible to prevent the formation of the electrode structure from being affected by the larger width of the second conductive semiconductor portion on the first doping region and / or the second doping region due to the larger ratio between S4 and S2, thereby reducing the difficulty of manufacturing the electrode structure and ensuring good contact performance between the electrode structure and the corresponding doping region, and ensuring good transmission performance of the electrode structure itself.

[0062] As a possible implementation scheme, the sum of the orthographic projection areas of all conductive semiconductor structures located between the first doping region and the second doping region on the backlight side is S3, the area of ​​the backlight side is S2, and the ratio of S3 to S2 is greater than or equal to 0.002% and less than or equal to 20%.

[0063] When the above technical solution is adopted, the ratio of S3 to S2 is within the above range. This can prevent the situation where a small ratio of S3 to S2 results in a small orthographic projection area of ​​a single conductive semiconductor structure on the backlight side and / or a small number of conductive semiconductor structures disposed on the backlight side, thereby ensuring that the reverse breakdown voltage of the back-contact cell is reduced to a range that meets operating requirements due to the provision of a reasonable number and orthographic projection area of ​​conductive semiconductor structures. Furthermore, this can also prevent the situation where a large ratio of S3 to S2 results in a large orthographic projection area of ​​a single conductive semiconductor structure on the backlight side and / or a large number of conductive semiconductor structures disposed on the backlight side, thereby preventing the photovoltaic module including the back-contact cell from having poor operating efficiency in the forward voltage region.

[0064] As a possible implementation, the width of the spacer region between the first doping region and the second doping region is D1. Along the extension direction of the spacer region, the width of the conductive semiconductor structure is W, and 0.5D1≤W≤6D1.

[0065] When the above technical solution is adopted, the effective electrical contact area between the conductive semiconductor structure and the first doping region and the second doping region, as well as the area ratio of the portion of the conductive semiconductor structure that is in effective electrical contact with the first doping region and the second doping region on the backlight side can be effectively adjusted by adjusting the value of W. This prevents the magnitude of the reverse breakdown voltage of the back-contact battery that can be reduced by setting the conductive semiconductor structure from being low due to the small effective electrical contact area between a single conductive semiconductor structure and the first doping region and the second doping region, and the small total area ratio of the portion of all conductive semiconductor structures that are in effective electrical contact with the first doping region and the second doping region on the backlight side, thereby preventing the back-contact battery from being burned due to local heat concentration. Within a certain range, smaller conductive semiconductor structures have higher requirements for etching accuracy, so W ≥ 0.5D1 can further reduce the manufacturing difficulty of forming the conductive semiconductor structure on the backlight side. In addition, each conductive semiconductor structure can be regarded as a local recombination center set between the first doping region and the second doping region. Based on this, when W is within the above range, it can also prevent the local leakage current between the first doping region and the second doping region from being large due to the large value of W, thereby ensuring that the photovoltaic module including the back-contact cell provided in this application has a high photoelectric conversion efficiency in the forward voltage region.

[0066] As a possible implementation solution, 0.5D1≤W≤3D1.

[0067] When the above technical solution is adopted, in actual application, not only the width of the conductive semiconductor structure along the extension direction of the spacing region will affect the effective electrical contact area between the conductive semiconductor structure and the first doped region and the second doped region, but the thickness of the conductive semiconductor structure (and, when the conductive semiconductor structure is also electrically disposed above a portion of the first doped region and / or the second doped region facing away from the semiconductor substrate, the width of the portion of the conductive semiconductor structure disposed on the first doped region and / or the second doped region) may also affect the size of the effective electrical contact area. It can be understood that when the doped semiconductor layers included in the first doped region and the second doped region are disposed at different heights on the semiconductor substrate, and the smaller of the two is smaller than the height of the conductive semiconductor structure on the semiconductor substrate, and the smaller of the two has a conductivity type opposite to that of the conductive semiconductor structure, the greater the thickness of the conductive semiconductor structure, the greater the effective electrical contact area. In the above case, the width W of the conductive semiconductor structure along the extension direction of the spacing region is within the above range, and a predetermined setting space can be reserved at least for the thickness range of the conductive semiconductor structure and / or the setting width range under the electrical setting, thereby preventing the leakage loss of the back contact battery from being reduced to a small extent due to the large effective electrical contact area caused by the large thickness, width W and setting width of the conductive semiconductor structure under the electrical setting, thereby ensuring that the back contact battery has a relatively high working efficiency.

[0068] As a possible implementation, the conductive semiconductor structure has the same conductivity type as the first doped region and is continuous with the first doped region. Alternatively, the conductive semiconductor structure has the same conductivity type as the second doped region and is continuous with the first doped region.

[0069] When the above technical solution is adopted, in the actual manufacturing process, the same process can be used to manufacture the conductive semiconductor structure while manufacturing the first doping region or the second doping region. For example: when manufacturing the first doping region or the second doping region, the first doping region or the second doping region that is only provided in a local area of ​​the backlight surface can be obtained respectively by selectively etching the entire layer of doped semiconductor material formed on one side of the backlight surface. Based on this, when the conductive semiconductor structure is continuous with the first doping region or the second doping region, the conductive semiconductor structure and the first doping region (or the second doping region) are formed based on the same doped semiconductor material layer, which reduces the manufacturing cost of the back contact battery while eliminating the need to use deposition and etching processes to separately form the conductive semiconductor structure, thereby simplifying the manufacturing process of the back contact battery and improving the manufacturing efficiency of the back contact battery.

[0070] As a possible implementation scheme, the back-contact battery also includes a surface passivation layer and an electrode structure. The surface passivation layer is formed at least on the first doping region, the second doping region and the conductive semiconductor structure. The electrode structure penetrates the surface passivation layer and is in ohmic contact with the first doping region and the second doping region, respectively. The portion of the electrode structure electrically connected to the first doping region and the portion of the electrode structure electrically connected to the second doping region are insulated from each other. Along the direction parallel to the backlight surface, the minimum spacing between the electrode structure and the portion of the surface passivation layer covering the conductive semiconductor structure is greater than or equal to 30 μm and less than or equal to 250 μm.

[0071] When the above technical solution is adopted, in the actual application process, the equipment for manufacturing the electrode structure often has a certain processing error, which leads to a certain deviation between the target formation range of the electrode structure and the actual formation range. Based on this, the minimum spacing between the electrode structure and the portion of the surface passivation layer covering the conductive semiconductor structure is within the above range, which can prevent the electrode structure from being at least partially formed above the conductive semiconductor structure due to the small minimum spacing, and thus being unable to timely extract the collected carriers of the first doping region and / or the second doping region. In addition, it can also prevent the conductive semiconductor structure from being set on the first doping region and the second doping region from being too small due to the large minimum spacing, thereby ensuring that each conductive semiconductor structure has a relatively large effective electrical contact area, which is beneficial to reducing the reverse breakdown voltage of the back-contact battery.

[0072] As one possible implementation, at least one of the first doped region, the second doped region, and the conductive semiconductor structure includes a doped semiconductor layer located on the backlight side of the semiconductor substrate; and the back-contact cell further includes a passivation layer located between the semiconductor substrate and the doped semiconductor layer. In this case, the passivation layer can passivate the corresponding region of the backlight side of the semiconductor substrate, reducing the carrier recombination rate.

[0073] As a possible implementation, the doped semiconductor layer includes: at least one of a doped polycrystalline silicon layer, a doped single crystal silicon layer, a doped amorphous silicon layer, a doped microcrystalline silicon layer, and a doped nanocrystalline silicon layer; and / or, when a passivation layer is provided between the doped semiconductor layer included in the first doped region and the semiconductor substrate, the passivation layer located between the doped semiconductor layer included in the first doped region and the semiconductor substrate is a tunneling passivation layer or an intrinsic amorphous silicon layer; and / or, when a passivation layer is provided between the doped semiconductor layer included in the second doped region and the semiconductor substrate, the passivation layer located between the second doped region and the semiconductor substrate is a tunneling passivation layer or an intrinsic amorphous silicon layer; and / or, when a passivation layer is provided between the doped semiconductor layer included in the conductive semiconductor structure and the semiconductor substrate, the passivation layer located between the conductive semiconductor structure and the semiconductor substrate is a tunneling passivation layer or an intrinsic amorphous silicon layer. In the above cases, there are multiple options for the type of doped semiconductor layer and the type of different passivation layers, which is conducive to expanding the application range of the back contact battery provided by the present application.

[0074] As a possible implementation solution, the first doped region and the second doped region both include a doped semiconductor layer located on the backlight surface of the semiconductor substrate.

[0075] As a possible implementation scheme, when one of the first doped region and the second doped region includes a doped semiconductor layer located on the backlight surface of the semiconductor substrate and the other is located within the semiconductor substrate, the second conductive semiconductor portion is arranged above the portion of the one of the first doped region and the second doped region located within the semiconductor substrate that is away from the semiconductor substrate.

[0076] As a possible implementation, the conductive semiconductor structure further includes a third conductive semiconductor portion electrically contacting the first conductive semiconductor portion. The third conductive semiconductor portion is disposed above a portion of the doped semiconductor layer facing away from the semiconductor substrate.

[0077] As a possible implementation scheme, when the first doped region and the second doped region are both formed in the semiconductor substrate, the conductive semiconductor structure also includes a third conductive semiconductor portion electrically contacting the first conductive semiconductor portion; one of the second conductive semiconductor portion and the third conductive semiconductor portion is arranged above a portion of one of the first doped region and the second doped region facing away from the semiconductor substrate, and the other of the second conductive semiconductor portion and the third conductive semiconductor portion is arranged above a portion of the other of the first doped region and the second doped region facing away from the semiconductor substrate.

[0078] When adopting the above-mentioned technical solution, there are at least four schemes for setting the first doped region and the second doped region on the backlight side of the semiconductor substrate. According to the different conductive semiconductor structures of each scheme, there are also corresponding different setting methods, which is convenient for selecting a suitable scheme according to the requirements of different application scenarios and the requirements for the size of the effective electrical contact area, which is conducive to expanding the application scope of the back-contact battery provided by this application.

[0079] As a possible implementation scheme, when the corresponding setting mode of the second conductive semiconductor part is an insulating setting, the back contact battery also includes a physical spacing layer arranged between the second conductive semiconductor part and the corresponding first doping region and / or the corresponding second doping region; the physical spacing layer includes a doped silicon glass layer or a surface passivation layer.

[0080] As a possible implementation scheme, when the corresponding setting mode of the second conductive semiconductor part is electrical contact, the back contact battery also includes a physical spacing layer arranged between the second conductive semiconductor part and the corresponding first doping region and / or the corresponding second doping region, and the physical spacing layer includes a tunneling passivation layer or an intrinsic amorphous silicon layer.

[0081] As a possible implementation scheme, the effective electrical contact area corresponding to the conductive semiconductor structure is S, S = α × W × X + β × W × Z; wherein, 0≤α≤1, 0≤β≤1; the width of the conductive semiconductor structure along the extension direction of the spacing region is W; the height of the side effective electrical contact surface between the one of the first doped region and the second doped region with the opposite conductivity type to the conductive semiconductor structure and the conductive semiconductor structure is the side effective electrical contact height Z; the setting width of the second conductive semiconductor portion is X.

[0082] When adopting the above technical solution, the effective electrical contact area S corresponding to the conductive semiconductor structure is related to α, W, X, β and Z. The effective electrical contact area can be controlled by adjusting the sizes of the five values ​​of α, W, X, β and Z to obtain a suitable area of ​​the effective electrical contact surface and achieve optimized design of the product configuration.

[0083] As a possible implementation, the effective electrical contact surface corresponding to the conductive semiconductor structure includes a side effective electrical contact surface and / or a top effective electrical contact surface. Furthermore, the effective electrical contact area S is equal to α×W×X+β×Z×W. Where 0≤α≤1, 0≤β≤1; the width of the conductive semiconductor structure along the extension direction of the spacing region is W; the height of the side effective electrical contact surface between the conductive semiconductor structure and the first or second doped region of opposite conductivity type is Z; and the width of the second conductive semiconductor portion is X.

[0084] As a possible implementation solution, when the configuration corresponding to the second conductive semiconductor portion is an insulating configuration, α is equal to 0, and β is greater than 0.

[0085] As a possible implementation scheme, when the setting mode corresponding to the second conductive part is an electrical setting and the conductive semiconductor structure is not electrically contacted with the side of the conductive semiconductor structure of the opposite conductivity type in the first doping region and the second doping region, β is equal to 0 and α is greater than 0.

[0086] As a possible implementation scheme, when the setting mode corresponding to the second conductive part is an electrical setting, and the conductive semiconductor structure is electrically contacted with the side of one of the conductive types opposite to the conductive semiconductor structure in the first doping region and the second doping region, α and β are both greater than 0.

[0087] In a second aspect, the present application provides a photovoltaic assembly, which includes the solar cell provided by the first aspect and various implementations thereof.

[0088] The beneficial effects of the second aspect and its various implementations in this application can be referred to the analysis of the beneficial effects of the first aspect and its various implementations, and will not be repeated here.

[0089] In a third aspect, the present application also provides a method for manufacturing a back-contact battery, comprising: first, providing a semiconductor substrate. Next, forming a first doped region and a second doped region on the backlight side of the semiconductor substrate; the first doped region and the second doped region are alternately spaced and distributed on the backlight side of the semiconductor substrate, and the first doped region and the second doped region have opposite conductivity types; along the arrangement direction of the first doped region and the second doped region, the region between the first doped region and the second doped region is a spacing region. Next, forming a conductive semiconductor structure on the backlight side of the semiconductor substrate; the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion in electrical contact; the first conductive semiconductor portion is located in the spacing region, and the conductivity type of the first conductive semiconductor portion is opposite to the conductivity type of one of the first doped region and the second doped region; only a portion of the first doped region and only a portion of the second doped region are electrically connected to at least the first conductive semiconductor portion; and the second conductive semiconductor portion is disposed above a portion of the first doped region and / or the second doped region facing away from the semiconductor substrate.

[0090] As a possible implementation scheme, the backlight surface of the semiconductor substrate has first and second regions that are alternately spaced, and a spacer region located between the first region and the adjacent second region. In this case, forming a first doped region, a second doped region, and a conductive semiconductor structure on the backlight side of the semiconductor substrate includes: forming a first doped region in the first region. Next, forming a doped semiconductor material layer arranged in an entire layer in the first doped region, the spacer region, and the second region. The doped semiconductor material layer is selectively etched to remove portions of the doped semiconductor material layer corresponding to the first doped region and the spacer region; after the selective etching, the doped semiconductor material layer forms a second doped region and at least one conductive semiconductor structure, and the second doped region is located in the second region.

[0091] As a possible implementation scheme, the backlight surface of the semiconductor substrate has a first region and a second region that are alternately spaced, and a spacer region located between the first region and the second region adjacent thereto. In this case, forming a first doped region, a second doped region, and a conductive semiconductor structure on the backlight side of the semiconductor substrate includes: forming the second doped region in the first region. Next, forming a doped semiconductor material layer arranged in an entire layer in the second doped region, the spacer region, and the second region. Next, selectively etching the doped semiconductor material layer to remove portions of the doped semiconductor material layer corresponding to the second doped region and the spacer region; after selectively etching, the doped semiconductor material layer forms a first doped region and a conductive semiconductor structure, with the first doped region located in the second region.

[0092] The beneficial effects of the third aspect and its various implementation methods in this application can be referred to the beneficial effect analysis of the corresponding implementation methods in the first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0093] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0094] FIG1 is a schematic diagram of the scope of the selective etching area in the related art and a schematic diagram of the distribution of the first doped region and the second doped region on the backlight side after selective etching;

[0095] FIG2 is a schematic diagram showing a distribution relationship between the first doped region and the second doped region on the backlight side of a back-contact cell provided in an embodiment of the present application;

[0096] FIG3 is a schematic diagram of a first distribution of a conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact battery provided by an embodiment of the present application;

[0097] FIG4 is a schematic diagram of a first distribution of a conductive semiconductor structure between adjacent strip-shaped doped regions and a connecting region of opposite conductivity types in a back-contact battery provided by an embodiment of the present application;

[0098] FIG5 is a first longitudinal cross-sectional schematic diagram of a partial structure of a back-contact battery provided in an embodiment of the present application;

[0099] FIG6 is a second longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0100] FIG7 is a schematic diagram of a second distribution of a conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact battery provided by an embodiment of the present application;

[0101] FIG8 is a schematic diagram of a third distribution of a conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact battery provided by an embodiment of the present application;

[0102] FIG9 is a schematic diagram of a fourth distribution of the conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact battery provided by an embodiment of the present application;

[0103] FIG10 is a schematic diagram of a second distribution of the conductive semiconductor structure between adjacent strip-shaped doped regions and connecting regions of opposite conductivity types in a back-contact battery provided by an embodiment of the present application;

[0104] FIG11 is a schematic diagram of the scope of the selective etching area in an embodiment of the present application and a schematic diagram of the distribution of the first doped region, the second doped region and the conductive semiconductor structure on the backlight side after selective etching;

[0105] FIG12 is a third longitudinal cross-sectional schematic diagram of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0106] FIG13 is a fourth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0107] FIG14 is a fifth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0108] FIG15 is a sixth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0109] FIG16 is a seventh longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0110] FIG17 is an eighth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0111] FIG18 is a ninth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0112] FIG19 is a tenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0113] FIG20 is an eleventh longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0114] FIG21 is a twelfth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0115] FIG22 is a thirteenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0116] FIG23 is a fourteenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0117] FIG24 is a schematic longitudinal cross-sectional view of a fifteenth embodiment of a partial structure of a back-contact battery provided in an embodiment of the present application;

[0118] FIG25 is a sixteenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0119] FIG26 is a seventeenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0120] FIG27 is an eighteenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0121] FIG28 is a nineteenth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0122] FIG29 is a twentieth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0123] FIG30 is a twenty-first longitudinal cross-sectional schematic diagram of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0124] FIG31 is a twenty-second longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0125] FIG32 is a twenty-third schematic longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0126] FIG33 is a twenty-fourth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0127] FIG34 is a twenty-fifth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0128] FIG35 is a twenty-sixth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0129] FIG36 is a twenty-seventh longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0130] FIG37 is a twenty-eighth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0131] FIG38 is a twenty-ninth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0132] FIG39 is a 30th longitudinal cross-sectional schematic diagram of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0133] FIG40 is a thirty-first longitudinal cross-sectional schematic diagram of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0134] FIG41 is a thirty-second longitudinal cross-sectional schematic diagram of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0135] FIG42 is a thirty-third schematic longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0136] FIG43 is a thirty-fourth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0137] FIG44 is a thirty-fifth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0138] FIG45 is a thirty-sixth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0139] FIG46 is a thirty-seventh longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0140] FIG47 is a thirty-eighth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0141] FIG48 is a thirty-ninth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0142] FIG49 is a schematic longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0143] FIG50 is a schematic diagram of a first distribution of the conductive semiconductor structure on the backlight side of the back-contact battery provided in an embodiment of the present application;

[0144] FIG51 is a schematic diagram of a second distribution of the conductive semiconductor structure on the backlight side of the back-contact cell provided in an embodiment of the present application;

[0145] FIG52 is a graph showing the relationship between the number of conductive semiconductor structures and the leakage current, hot spot temperature, and reverse breakdown voltage when W is 200 μm and D1 is 100 μm in a back-contact cell provided by an embodiment of the present application;

[0146] FIG53 is a graph showing the relationship between the number of conductive semiconductor structures and the change in operating efficiency when W is equal to 200 microns and D1 is equal to 100 microns in a back-contact cell provided by an embodiment of the present application;

[0147] FIG54 is a graph showing the relationship between the number of conductive semiconductor structures and the leakage current, hot spot temperature, and reverse breakdown voltage when W is 680 μm and D1 is 100 μm;

[0148] FIG55 is a graph showing the relationship between the number of conductive semiconductor structures and the change in operating efficiency when W is 680 μm and D1 is 100 μm;

[0149] FIG56 is a graph showing the relationship between reverse current and reverse voltage corresponding to Examples 1 to 4 in the embodiments of the present application;

[0150] FIG57 is a schematic diagram of a fifth distribution of the conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact cell provided by an embodiment of the present application;

[0151] FIG58 is a schematic diagram of a sixth distribution of the conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact cell provided by an embodiment of the present application;

[0152] FIG59 is a schematic diagram of a seventh distribution of the conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact cell provided by an embodiment of the present application;

[0153] FIG60 is a schematic diagram of an eighth distribution of the conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact cell provided by an embodiment of the present application;

[0154] FIG61 is a schematic diagram of a ninth distribution of the conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact cell provided by an embodiment of the present application;

[0155] FIG62 is a schematic diagram of a tenth distribution of a conductive semiconductor structure between two adjacent strip-shaped doped regions of opposite conductivity types in a back-contact cell provided by an embodiment of the present application;

[0156] FIG63 is a forty-first schematic longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0157] FIG64 is a forty-second schematic longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0158] FIG65 is a forty-third schematic longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0159] FIG66 is a forty-fourth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0160] FIG67 is a forty-fifth longitudinal cross-sectional view of a portion of the structure of a back-contact battery provided in an embodiment of the present application;

[0161] Figure 68 is the forty-sixth longitudinal cross-sectional schematic diagram of a partial structure in the back-contact battery provided in an embodiment of the present application.

[0162] Figure numerals: 11 is the first doping region, 12 is the second doping region, 13 is the conductive semiconductor structure, 14 is the strip doping region, 15 is the connection region, 16 is the physical spacing layer, 17 is the first conductive semiconductor part, 18 is the second conductive semiconductor part, 19 is the surface passivation layer, 20 is the electrode structure, and 21 is the third conductive semiconductor part. DETAILED DESCRIPTION

[0163] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely illustrative and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0164] The accompanying drawings illustrate various schematic diagrams of structures according to embodiments of the present disclosure. These figures are not drawn to scale, and for the purpose of clarity, certain details are exaggerated and certain details may be omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions as needed.

[0165] In the context of this disclosure, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intervening layer / element between them. Furthermore, if a layer / element is "on" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element. To make the technical problems, technical solutions, and beneficial effects to be solved by this application more clearly understood, the application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely intended to explain this application and are not intended to limit this application.

[0166] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.

[0167] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to internal communication between two components or the interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0168] The hot spot effect occurs when a photovoltaic module experiences quality issues such as broken, cracked, or welded solar cells, or when the solar cells are obstructed by shadows, bird droppings, or dust, causing the problematic solar cell to act as a load and consume the energy generated by other solar cells connected in series, resulting in a localized increase in temperature. Furthermore, within a certain range, the higher the reverse breakdown voltage of the solar cell, the higher the temperature generated after the hot spot problem occurs.

[0169] As shown in Figure 1, in existing back-contact cells, two doped regions of opposite conductivity types, located on the backlight side, are completely isolated by a spacer region to reduce leakage from the cell end and improve the operating efficiency of the individual back-contact cells. However, from the perspective of the module, the complete isolation between the two doped layers of opposite conductivity types will result in a higher reverse breakdown voltage for the back-contact cell, which in turn leads to a higher risk of hot spots during actual operation of photovoltaic modules containing existing back-contact cells.

[0170] To address the above technical issues, in a first aspect, embodiments of the present application provide a back-contact battery. The back-contact battery can be a whole-sheet back-contact battery or a 1 / N sliced ​​back-contact battery. By dividing the whole-sheet back-contact battery by a division multiple N, N 1 / N sliced ​​back-contact batteries can be obtained. The division multiple N of the sliced ​​back-contact battery can be any positive integer greater than or equal to 2.

[0171] Specifically, as shown in Figures 7 to 10, the back-contact cell provided by the embodiment of the present application includes: a semiconductor substrate (not shown in the figures), a first doping region 11, a second doping region 12 and at least one conductive semiconductor structure 13. The first doping regions 11 and the second doping regions 12 are alternately spaced and distributed on the backlight side of the semiconductor substrate. The first doping regions 11 and the second doping regions 12 have opposite conductivity types. Along the arrangement direction of the first doping regions 11 and the second doping regions 12, the area between the first doping regions 11 and the second doping regions 12 is the spacing region. Among them, the conductive semiconductor structure 13 includes a first conductive semiconductor portion 17 and a second conductive semiconductor portion 18 that are in electrical contact. The first conductive semiconductor portion is located in the spacing region, and only a portion of the first doping region 11 and only a portion of the second doping region 12 are respectively electrically connected to at least the conductive semiconductor structure 13; the second conductive semiconductor portion 18 is arranged above the portion of the first doping region and / or the second doping region that is away from the semiconductor substrate.

[0172] When the above technical solution is adopted, as shown in Figures 7 to 10, first doped regions 11 and second doped regions 12 of opposite conductivity types are alternately spaced and distributed on the backlight side of the semiconductor substrate to effectively shunt carriers when the back-contact cell is in operation, thereby facilitating the formation of photocurrent. Secondly, as shown in Figures 7 to 10, the back-contact cell provided in the embodiment of the present application also includes a first conductive semiconductor portion 17 located between the first doped region and the second doped region. Based on this, because each conductive semiconductor structure 13 has conductive properties and the conductivity type of the first conductive semiconductor portion 17 is opposite to the conductivity type of one of the first doped region 11 and the second doped region 12, when the first conductive semiconductor portion 17 is electrically connected to a portion of the first doped region and a portion of the second doped region, the first doped region and the second doped region can be electrically connected by creating a local leakage point to form a built-in diode with a low reverse breakdown voltage, thereby facilitating a low reverse breakdown voltage when the back-contact cell is blocked. In addition, only a portion of the first doped region and only a portion of the second doped region are electrically connected to the first conductive semiconductor portion 17. In other words, part of the first doping region and the corresponding part of the second doping region are respectively electrically connected to the above-mentioned first conductive semiconductor portion 17, while the remaining areas in the first doping region and the corresponding areas in the second doping region are still physically separated by insulating grooves or insulating materials, etc., to prevent the back contact battery from having a large leakage current when it is in normal working conditions due to the conductive semiconductor structure 13 being provided between all areas of the first doping region and the second doping region, thereby preventing the back contact battery from having a low working efficiency due to the large leakage current when it is in normal working conditions, and ensuring that the photovoltaic module including the back contact battery provided in the embodiment of the present application has a high photoelectric conversion efficiency in the forward voltage region.

[0173] Secondly, the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, which can prevent the strict requirement of etching accuracy for obtaining only a conductive semiconductor structure located only between the first doped region and the second doped region, thereby reducing the difficulty of etching. At the same time, it can also ensure that the first doped region can be locally electrically connected through the conductive semiconductor structure. Secondly, regardless of whether the corresponding setting mode of the second conductive semiconductor portion is an insulating setting or an electrical setting, the second conductive semiconductor portion can participate in the actual carrier recombination effect through the first conductive semiconductor portion, that is, the existence of the second conductive semiconductor portion can increase the leakage current of the first doped region and the second doped region through a single conductive semiconductor structure to a certain extent, thereby facilitating the same purpose of reducing the risk of hot spots when the conductive semiconductor structure has a relatively small size. It can provide another adjustment factor for adjusting the conductive semiconductor structure under the premise of reducing the risk of hot spots and ensuring high working efficiency, which is conducive to improving the applicability of the back contact battery provided by this application in different application scenarios.

[0174] In addition, in response to the above-mentioned technical problem (from the component end, the two doping layers with opposite conductivity types are completely isolated, which will cause the back contact battery to have a higher reverse breakdown voltage, and thus cause the photovoltaic module including the existing back contact battery to have a higher risk of hot spots during actual operation), those skilled in the art changed the continuous insulating grooves located on the spacing area in the original back contact battery to discontinuous insulating grooves, so that the two doping layers with opposite conductivity types are electrically connected through the disconnected parts of the insulating grooves, thereby reducing the reverse breakdown voltage of the back contact battery and reducing the risk of hot spots in the photovoltaic module including the existing back contact battery during actual operation. However, the width of the undisconnected part in the spacing area of ​​the existing back contact battery is set unreasonably along its own extension direction, resulting in a large leakage current of the back contact battery from the battery end, which in turn makes the working efficiency of the back contact battery poor. The present application also provides a solution to this.

[0175] Specifically, as shown in Figures 2 to 4, the back-contact cell provided in the embodiment of the present application includes: a semiconductor substrate (not shown in the figures), a first doping region 11, a second doping region 12 and at least one conductive semiconductor structure 13. Each conductive semiconductor structure 13 is at least partially located between the first doping region 11 and the second doping region 12, and only a portion of the first doping region 11 and only a portion of the second doping region 12 are respectively in electrical contact with at least one conductive semiconductor structure 13. The first doping region 11 and the second doping region 12 have opposite conductivity types, and the conductive semiconductor structure 13 has an opposite conductivity type to that of one of the first doping region 11 and the second doping region 12. As shown in Figure 2, the first doping region 11 and the second doping region 12 each include a plurality of strip-shaped doping regions 14 and at least one connection region 15. The strip-shaped doped regions 14 included in the first doped region 11 and the strip-shaped doped regions 14 included in the second doped region 12 are arranged parallel and alternately on the backlight side of the semiconductor substrate. Each connection region 15 is electrically connected to a corresponding strip-shaped doped region 14 of the same conductivity type as itself. The connection region 15 extends in a direction different from that of the strip-shaped doped regions 14. As shown in Figures 2 and 4, at least one conductive semiconductor structure 13 is at least partially located between a strip-shaped doped region 14 included in one of the first doped region 11 and the second doped region 12 and an adjacent connection region 15 included in the other.

[0176] It should be noted that the extension direction of the spacer region is parallel to the backlight surface of the semiconductor substrate and perpendicular to the width of the spacer region. The width direction of the conductive semiconductor structure is parallel to the distribution direction of the strip-shaped doped regions of opposite conductivity types.

[0177] When the above technical solution is adopted, as shown in FIG2 , the first doping region 11 and the second doping region 12 of opposite conductivity types are distributed on the backlight side of the semiconductor substrate to effectively shunt carriers when the back contact cell is in operation, thereby facilitating the formation of photocurrent. Secondly, as shown in FIG3 and FIG4 , the back contact cell provided in the embodiment of the present application further includes at least one conductive semiconductor structure 13 located at least partially between the first doping region and the second doping region. Based on this, since each conductive semiconductor structure 13 has conductive properties and the conductivity type of the conductive semiconductor structure 13 is opposite to the conductivity type of one of the first doping region 11 and the second doping region 12, when the conductive semiconductor structure 13 is electrically connected to a portion of the first doping region and a portion of the second doping region, the first doping region and the second doping region can be electrically connected by creating a local leakage point to form a built-in diode with a lower reverse breakdown voltage, thereby facilitating the back contact cell to have a lower reverse breakdown voltage when it is blocked. In addition, only a portion of the first doping region and only a portion of the second doping region are electrically connected to at least one conductive semiconductor structure 13. In other words, a portion of the first doping region and a corresponding portion of the second doping region are respectively electrically contacted with at least one conductive semiconductor structure 13, while the remaining regions of the first doping region and the corresponding regions of the second doping region are still physically isolated by insulating trenches or insulating materials, etc., to prevent the back contact cell from having a large leakage current under normal working conditions due to the conductive semiconductor structure 13 being provided between all regions of the first doping region and the second doping region, thereby preventing the back contact cell from having a low working efficiency due to the conductive semiconductor structure 13 being provided between all regions of the first doping region and the second doping region, thereby ensuring that the photovoltaic module including the back contact cell provided by the embodiment of the present application has a high photoelectric conversion efficiency in the forward voltage region. As shown in Figures 2 and 4, at least one conductive semiconductor structure 13 is at least partially located between a strip-shaped doping region 14 included in one of the first doping region 11 and the second doping region 12 and an adjacent connecting region 15 included in the other, so that the reverse breakdown voltage and forward leakage loss of the back contact cell can be regulated by adjusting the size of the conductive semiconductor structure 13 according to the actual application scenario, thereby improving the working performance of the back contact cell provided by the embodiment of the present application.

[0178] In actual application, the semiconductor substrate may be a substrate made of any semiconductor material, such as a silicon substrate, a silicon-germanium substrate, a germanium substrate, or a gallium arsenide substrate.

[0179] With respect to the first doping region and the second doping region, in terms of conductivity type, the first doping region can be an N-type doping region, in which case the second doping region is a P-type doping region. Alternatively, the first doping region can also be a P-type doping region, in which case the second doping region is an N-type doping region. Secondly, the embodiment of the present application does not specifically limit the thickness (or depth) H1 of the first doping region and the thickness (or depth) H2 of the second doping region, as long as they can be applied to the back-contact battery provided in the embodiment of the present application.

[0180] In addition, in terms of formation position, the first doping region and the second doping region can both be formed on the backlight side of the semiconductor substrate; in this case, the surface of the first doping region facing away from the light-facing side of the semiconductor substrate and the surface of the second doping region facing away from the light-facing side of the semiconductor substrate can both be flush with the backlight side of the semiconductor substrate, or there can be a height difference between them. The depth of the first doping region and the second doping region refers to the corresponding doping depth. Secondly, the material of the first doping region and the second doping region is the same as that of the semiconductor substrate.

[0181] Alternatively, the first doped region and / or the second doped region may both comprise a doped semiconductor layer formed on the backlight surface of the semiconductor substrate. In this case, the material of the doped semiconductor layer may comprise any semiconductor material such as silicon, silicon germanium, germanium, or gallium arsenide. In terms of the arrangement of the material, the crystalline phase of the doped semiconductor layer may be amorphous, microcrystalline, nanocrystalline, single crystal, or polycrystalline. Specifically, the material of the doped semiconductor layer included in the first doped region and the doped semiconductor layer included in the second doped region may be the same or different.

[0182] Among them, when the first doped region includes a doped semiconductor layer located on the backlight surface of the semiconductor substrate, the doped semiconductor layer included in the first doped region can be directly formed on a partial area of ​​the backlight surface of the semiconductor substrate; or, the back contact battery provided in the embodiment of the present application also includes a passivation layer located between the doped semiconductor layer included in the first doped region and the semiconductor substrate. The material of the passivation layer can be determined according to the material of the doped semiconductor layer included in the first doped region and the actual application scenario, and is not specifically limited here. For example: when the doped semiconductor layer included in the first doped region is a doped polycrystalline silicon layer, the passivation layer is a tunneling passivation layer. For another example: when the doped semiconductor layer included in the first doped region includes a doped amorphous silicon layer and / or a doped microcrystalline silicon layer, the passivation layer is an intrinsic amorphous silicon layer.

[0183] Secondly, when the doped semiconductor layer included in the first doped region is located on the backlight surface of the semiconductor substrate, the first doped region may further include a sub-doped region formed by diffusion in a corresponding region of the semiconductor substrate. Specifically, when a passivation layer is provided between the doped semiconductor layer included in the first doped region and the semiconductor substrate, the first doped region may also include a sub-doped region formed by diffusion in a corresponding region of the passivation layer.

[0184] When the doped semiconductor layer included in the second doping region is located on the backlight surface of the semiconductor substrate, the doped semiconductor layer included in the second doping region can be directly formed on a partial area of ​​the backlight surface of the semiconductor substrate; or, the back contact battery provided in the embodiment of the present application also includes a passivation layer located between the doped semiconductor layer included in the second doping region and the semiconductor substrate. The material of the passivation layer can be determined according to the material of the doped semiconductor layer included in the second doping region and the actual application scenario, and is not specifically limited here. For example: when the doped semiconductor layer included in the second doping region is a doped amorphous silicon layer and / or a doped microcrystalline silicon layer, the passivation layer can be an intrinsic amorphous silicon layer. For another example: when the doped semiconductor layer included in the second doping region is a doped polycrystalline silicon layer, the passivation layer is a tunneling passivation layer.

[0185] Secondly, when the second doped region includes a doped semiconductor layer located on the backlight surface of the semiconductor substrate, the second doped region may further include a sub-doped region formed by diffusion in a corresponding region of the semiconductor substrate. Specifically, when a passivation layer is provided between the doped semiconductor layer included in the second doped region and the semiconductor substrate, the second doped region may also include a sub-doped region formed by diffusion in a corresponding region of the passivation layer.

[0186] Specifically, when a passivation layer is provided between the doped semiconductor layer included in the first doped region and the semiconductor substrate, and between the doped semiconductor layer included in the second doped region and the semiconductor substrate, the materials and / or thicknesses of the two passivation layers may be the same or different.

[0187] Illustratively, in the back-contact cell provided in an embodiment of the present application, the semiconductor substrate is a P-type semiconductor substrate, and the first doped region and the second doped region both include a doped semiconductor layer formed on the backlight surface of the semiconductor substrate. The doped semiconductor layer included in the first doped region and the doped semiconductor layer included in the second doped region are both doped polysilicon layers, and a tunneling passivation layer is formed between the doped semiconductor layer included in the first doped region and the doped semiconductor layer included in the second doped region and the semiconductor substrate, respectively.

[0188] In terms of morphology, the embodiments of the present application do not impose any specific restrictions on the morphology of the first doping region and the second doping region, as long as the first doping region and the second doping region can be alternately distributed on the backlight side.

[0189] For example, the first doped region and the second doped region may be arranged in strips, alternating with each other. In this case, the strip-shaped doped regions included in the first doped region and the strip-shaped doped regions included in the second doped region are parallel and spaced apart. The conductive semiconductor structure may be at least partially located between two adjacent strip-shaped doped regions of opposite conductivity types.

[0190] Alternatively, as shown in FIG2 , the first doping regions 11 and the second doping regions 12 may be arranged alternately in an interdigitated pattern. In this case, each of the first doping region 11 and the second doping region 12 includes a plurality of strip-shaped doping regions 14 and at least one connection region 15. The strip-shaped doping regions 14 included in the first doping region 11 and the strip-shaped doping regions 14 included in the second doping region 12 are arranged in parallel and alternately. Each connection region 15 is electrically connected to a corresponding strip-shaped doping region 14 of the same conductivity type as itself. The extension direction of the connection region 15 is different from the extension direction of the strip-shaped doping regions 14.

[0191] With respect to the conductive semiconductor structures, the embodiments of the present application do not impose specific restrictions on the morphology of the conductive semiconductor structures. For example, the orthographic projection of each conductive semiconductor structure on the backlight side may be rectangular, trapezoidal, hexagonal, or beaded. Furthermore, the embodiments of the present application do not impose specific restrictions on the conductivity type and impurity doping concentration of the conductive semiconductor structures; any configuration is acceptable as long as the first doped region and the second doped region are electrically connected.

[0192] From the perspective of actual manufacturing, the conductive semiconductor structure can be formed separately on the backlight side of the semiconductor substrate relative to the first doping region and the second doping region, that is, the conductive semiconductor structure is not integrally continuous with the first doping region and the second doping region. In this case, the material of the conductive semiconductor structure can be the same as or different from the material of the first doping region or the second doping region. The doping concentration of impurities in the conductive semiconductor structure can be greater than, equal to, or less than the doping concentration of impurities in either the first doping region or the second doping region. In addition, in this case, when the conductive semiconductor structure is formed on the semiconductor substrate, at least part of the conductive semiconductor structure can be directly located on the semiconductor substrate, or a passivation layer can be formed between the conductive semiconductor structure and the semiconductor substrate. The material of the passivation layer can be determined according to the material of the conductive semiconductor structure. For example, when the conductive semiconductor structure is a doped amorphous silicon layer and / or a doped microcrystalline silicon layer, the passivation layer can be an intrinsic amorphous silicon layer. For another example, when the conductive semiconductor structure is a doped polycrystalline silicon layer, the passivation layer is a tunneling passivation layer. Specifically, when a passivation layer is provided between the first doped region and / or the second doped region and the semiconductor substrate, and between the conductive semiconductor structure and the semiconductor substrate, the material and / or thickness of at least two passivation layers may be the same or different.

[0193] Alternatively, as shown in FIG5 , the conductive semiconductor structure 13 has the same conductivity type as the first doped region 11 and is continuous with the first doped region 11; in this case, the material and impurity doping concentration of the conductive semiconductor structure 13 are respectively the same as the material and impurity doping concentration of the first doped region 11 ( FIG5 is a schematic longitudinal cross-sectional view along the A-A' direction of FIG3 ). Alternatively, as shown in FIG6 , the conductive semiconductor structure 13 has the same conductivity type as the second doped region 12 and is continuous with the second doped region 12. In this case, the material and impurity doping concentration of the conductive semiconductor structure 13 are respectively the same as the material and impurity doping concentration of the second doped region 12.

[0194] When the conductive semiconductor structure includes a doped semiconductor layer located on the backlight surface of the semiconductor substrate, the region corresponding to the conductive semiconductor structure may include the region where the doped semiconductor layer itself is located, and may also include a sub-doped region formed by diffusion within the corresponding region of the semiconductor substrate. Specifically, when a passivation layer is provided between the doped semiconductor layer and the semiconductor substrate included in the conductive semiconductor structure, the region corresponding to the conductive semiconductor structure may also include a sub-doped region formed by diffusion within the corresponding region of the passivation layer.

[0195] It is worth noting that in the actual manufacturing process, the same process can be used to manufacture the conductive semiconductor structure while manufacturing the first doping region or the second doping region. For example: when the first doping region or the second doping region is continuous with the conductive semiconductor structure, the first doping region or the second doping region located only on the local area of ​​the backlight surface can be obtained by selectively etching the entire layer of doped semiconductor material formed on the side of the backlight surface. Based on this, when the conductive semiconductor structure is continuous with the first doping region (or the second doping region), the conductive semiconductor structure and the first doping region (or the second doping region) are formed based on the same doped semiconductor material layer, which reduces the manufacturing cost of the back contact battery while eliminating the need to use deposition and etching processes to separately form the conductive semiconductor structure, thereby simplifying the manufacturing process of the back contact battery and improving the manufacturing efficiency of the back contact battery. When the conductive semiconductor structure is not integrally continuous with the first doping region and the second doping region, a conductive semiconductor structure that meets the corresponding material and doping concentration requirements can be formed according to the needs of the actual application scenario. There is no need to make the material and doping concentration of the conductive semiconductor structure only the same as the first doping region or the second doping region that is integrally continuous with it, thereby improving the applicability of the back-contact battery provided in the embodiment of the present application in different application scenarios.

[0196] In terms of setting relative heights, the backlight surface of the semiconductor substrate may be a plane, and in this case, the surfaces of the first doped region, the second doped region, and the conductive semiconductor structure corresponding to the backlight surface are flush.

[0197] Alternatively, the first doping region and the second doping region each have a height difference greater than 0 between their respective surfaces on the backlight side of the semiconductor substrate. In this case, the smaller of the surface on the backlight side of the first doping region and the surface on the backlight side of the second doping region may be the same height as the surface on the backlight side of the conductive semiconductor structure, or the larger of the surface on the backlight side of the first doping region and the surface on the backlight side of the second doping region may be the same height as the surface on the backlight side of the conductive semiconductor structure, or the height of the surface on the backlight side of the conductive semiconductor structure may be between the height of the surface on the backlight side of the first doping region and the height of the surface on the backlight side of the second doping region.

[0198] In addition, the specific formation position of the portion of each conductive semiconductor structure between the first doping region and the second doping region can be determined based on the morphology of the first doping region and the second doping region, as well as the actual application scenario, as long as the first doping region and the second doping region can be electrically connected through the conductive semiconductor structure.

[0199] Exemplarily, when the first doping regions and the second doping regions are distributed alternately in strips, at least one conductive semiconductor structure is at least partially located between two adjacent strip-shaped doping regions with opposite conductivity types.

[0200] For example, when the first doping region and the second doping region are alternately distributed in an interdigitated manner, as shown in Figures 2 and 3, at least one conductive semiconductor structure 13 can be at least partially located between two adjacent strip-shaped doping regions 14 belonging to the first doping region 11 and the second doping region 12, respectively. In this case, the width direction of the conductive semiconductor structure 13 is parallel to the extension direction of the strip-shaped doping region 14; and / or, as shown in Figures 2 and 4, at least one conductive semiconductor structure 13 can also be at least partially located between a strip-shaped doping region 14 included in one of the first doping region 11 and the second doping region 12 and an adjacent connecting region 15 included in the other. In this case, the width direction of the conductive semiconductor structure 13 is parallel to the distribution direction of the strip-shaped doping regions 14 of opposite conductivity types. In this case, there are at least three optional options for the location of each conductive semiconductor structure 13 on the backlight side, which facilitates the selection of an appropriate option according to the requirements of different application scenarios, thereby improving the applicability of the back-contact battery provided by the embodiment of the present application in different application scenarios.

[0201] Specifically, as shown in FIG. 7 to FIG. 9 , the conductive semiconductor structure 13 may include a first conductive semiconductor portion 17 and a second conductive semiconductor portion 18 that are in electrical contact.

[0202] Alternatively, as shown in FIG. 3 to FIG. 6 , the conductive semiconductor structure 13 may also be located only between the first doping region 11 and the second doping region 12 .

[0203] When the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, in terms of the object of installation, as shown in FIG7 , the second conductive semiconductor portion 18 may be provided only on the first doped region. As shown in FIG8 , the second conductive semiconductor portion 18 may be provided only on the second doped region. As shown in FIG9 , the second conductive semiconductor portion 18 may be provided on both the first doped region and the second doped region. In this case, there are multiple options for the formation range of the conductive semiconductor structure 13, which can avoid the need for strict etching accuracy to obtain only the conductive semiconductor structure 13 located only between the first doped region and the second doped region, thereby reducing the difficulty of etching. At the same time, it can also ensure that the first doped region can be locally electrically connected through the conductive semiconductor structure 13.

[0204] In terms of the arrangement direction, when the first and second doped regions are arranged in an alternating strip pattern, the second conductive semiconductor portion can be arranged along the width direction of the doped strip regions, above the portion of the corresponding doped strip regions facing away from the semiconductor substrate. In this case, the arrangement width of the portion of the second conductive semiconductor portion arranged along the width direction of the doped strip regions above the corresponding doped strip regions is defined as X1.

[0205] Alternatively, as shown in FIG2 , when the first doping regions 11 and the second doping regions 12 are alternately distributed in an interdigitated manner, as shown in FIG7 to FIG9 , the second conductive semiconductor portion 18 may be disposed on the strip-shaped doping regions 14 included in the first doping region and / or the strip-shaped doping regions 14 included in the second doping region along the width direction of the strip-shaped doping regions 14. In this case, it is defined that the width of the portion of the second conductive semiconductor portion 18 disposed on the corresponding strip-shaped doping regions 14 along the width direction of the strip-shaped doping regions 14 is X1. Alternatively, as shown in FIG10 , the second conductive semiconductor portion 18 may also be disposed on the strip-shaped doping regions 14 included in the first doping region and / or the strip-shaped doping regions 14 included in the second doping region along the extension direction of the strip-shaped doping regions 14. In this case, it is defined that the width of the portion of the second conductive semiconductor portion 18 disposed on the corresponding strip-shaped doping regions 14 along the extension direction of the strip-shaped doping regions 14 is X2. Alternatively, as shown in Figure 10, the second conductive semiconductor portion 18 can also be arranged on the connection region 15 included in the first doping region and / or the connection region 15 included in the second doping region along the extension direction of the strip doping region 14. In this case, it is defined that: in the second conductive semiconductor portion, the setting width of the portion arranged on the corresponding connection region 15 along the extension direction of the strip doping region 14 is X3.

[0206] In terms of setting distribution, when the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, as shown in Figures 7 to 9, the second conductive semiconductor portion 18 may be provided above one side of the first doping region and / or the second doping region along the width direction; or, as shown in Figure 11, the second conductive semiconductor portion 18 may be provided above both sides of the first doping region 11 and / or the second doping region 12 along the width direction.

[0207] In terms of the arrangement, as shown in Figures 12 and 13 , the second conductive semiconductor portion 18 can be in direct contact with the first doping region 11 and / or the second doping region 12. In this case, not only are the sidewalls of the conductive semiconductor structure 13 in electrical contact with the first doping region 11 and the second doping region 12, but the portion of the conductive semiconductor structure 13 disposed on the first doping region 11 and / or the second doping region 12 is also in electrical contact with the first doping region 11 and / or the second doping region 12.

[0208] Alternatively, in the actual manufacturing process, as shown in FIG14 , corresponding physical spacer layers 16 may be formed on the first doping region 11 and the second doping region 12, respectively. The physical spacer layer 16 may be formed when the first doping region 11 and the second doping region 12 are manufactured using a diffusion process, or may be formed to prevent the already formed first doping region 11 and the second doping region 12 from being affected by subsequent processes (e.g., in order to prevent the already formed first doping region 11 from being inverted when the second doping region 12 is manufactured on the backlight side after the first doping region 11 is formed, a physical spacer layer 16 is formed on the surface of the first doping region 11). Based on this, the physical spacer layer 16 may be a conductive layer, and in this case, the corresponding portion of the conductive semiconductor structure 13 is electrically connected to the first doping region 11 and / or the second doping region 12, and the corresponding electrical contact of the conductive semiconductor structure 13 may refer to the corresponding electrical contact during the direct contact described above. Alternatively, the physical spacing layer 16 may be a non-conductive insulating layer. In this case, regardless of whether the conductive semiconductor structure 13 is disposed on at least one of the first doping region 11 and the second doping region 12, the conductive semiconductor structure 13 is only electrically contacted with the side surfaces of the first doping region 11 and the second doping region 12, respectively. That is, reference may be made to the electrical contact situation described above when the conductive semiconductor structure 13 is only located between the first doping region 11 and the second doping region 12.

[0209] In terms of the structural configuration, the contact surface between the conductive semiconductor structure and the conductive semiconductor structure of the first and second doped regions, whichever has a conductivity type opposite to that of the conductive semiconductor structure, comprises a lateral effective electrical contact surface. This lateral effective electrical contact surface may be parallel to the thickness direction of the semiconductor substrate, or may have a certain angle with the thickness direction of the semiconductor substrate. The embodiment of the present application does not specifically limit the size of this angle.

[0210] As for the specific structure of the conductive semiconductor structure, it can be determined according to the formation position of the first doping region and the second doping region on the backlight side of the semiconductor substrate. Specifically, it can be divided into the following four cases for explanation:

[0211] In the first case, as shown in FIG67 , when one of the first doping region 11 and the second doping region 12 comprises a doped semiconductor layer located on the backlight surface of the semiconductor substrate, and the other is located within the semiconductor substrate, the conductive semiconductor structure 13 may include a first conductive semiconductor portion 17 and a second conductive semiconductor portion 18. The second conductive semiconductor portion 18 is disposed above a portion of the first doping region 11 or the second doping region 12 located within the semiconductor substrate and facing away from the semiconductor substrate.

[0212] Second, as shown in FIG68 , when one of the first doped region 11 and the second doped region 12 comprises a doped semiconductor layer located on the light-reflecting surface of the semiconductor substrate, and the other is located within the semiconductor substrate, the conductive semiconductor structure 13 further comprises a third conductive semiconductor portion 21 electrically contacting the first conductive semiconductor portion 17. The third conductive semiconductor portion 21 is disposed above a portion of the doped semiconductor layer facing away from the semiconductor substrate.

[0213] The third type, as shown in FIG63 , when the first doping region 11 and the second doping region 12 both include a doped semiconductor layer located on the backlight surface of the semiconductor substrate, the conductive semiconductor structure includes the above-mentioned first conductive semiconductor portion and the second conductive semiconductor portion.

[0214] Fourthly, as shown in FIG65 , when both the first doping region 11 and the second doping region 12 are formed in the semiconductor substrate, the conductive semiconductor structure 13 further includes a third conductive semiconductor portion 13 in electrical contact with the first conductive semiconductor portion 17. The second conductive semiconductor portion 18 is disposed above a portion of one of the first doping region 11 and the second doping region 12 facing away from the semiconductor substrate, and the third conductive semiconductor portion 21 is disposed above a portion of the other of the first doping region 11 and the second doping region 12 facing away from the semiconductor substrate.

[0215] In terms of surface height difference, along the thickness direction of the semiconductor substrate, the ratio of the height from the upper surface of the second conductive semiconductor portion to the upper surface of the first doped region or the second doped region disposed directly below it to the thickness of the first doped region or the second doped region disposed directly below the same second conductive semiconductor portion can be greater than or equal to 0.5 and less than or equal to 1.5. In this case, it is possible to prevent the corresponding field passivation capability from being poor due to the smaller thickness of the first doped region or the second doped region caused by the larger ratio. In addition, it is also possible to prevent the corresponding parasitic absorption from being high due to the larger thickness of the first doped region or the second doped region caused by the smaller ratio, thereby ensuring that the back-contact battery has a higher operating efficiency.

[0216] For example, along the thickness direction of the semiconductor substrate, the height from the upper surface of the second conductive semiconductor portion to the upper surface of the first doped region or the second doped region disposed directly thereunder may be greater than or equal to 50 nm and less than or equal to 2 μm. For example, along the thickness direction of the semiconductor substrate, the height from the upper surface of the second conductive semiconductor portion to the upper surface of the first doped region or the second doped region disposed directly thereunder may be 50 nm, 100 nm, 300 nm, 600 nm, 900 nm, 1.2 μm, 1.5 μm, or 2 μm, etc.

[0217] In addition, when the first doped region, the second doped region, and the conductive semiconductor structure all include doped semiconductor layers, as shown in Figures 18, 19, 24, and 34, the height of the surface of the region of the backlight surface corresponding to the conductive semiconductor structure 13 can be greater than or equal to the height of the surface of the region of the backlight surface corresponding to the first doped region 11 (or second doped region 12) of opposite conductivity type to the conductive semiconductor structure 13. Alternatively, as shown in Figures 20, 25, and 36, the height of the surface of the region of the backlight surface corresponding to the conductive semiconductor structure 13 can also be less than the height of the surface of the region of the backlight surface corresponding to the first doped region 11 (or second doped region 12) of opposite conductivity type to the conductive semiconductor structure 13. In this case, during the actual manufacturing process, when forming the conductive semiconductor structure 13, the material used to form the doped semiconductor layer included in the conductive semiconductor structure 13 is difficult to fill in the corners caused by the height difference, which easily makes it difficult for the doped semiconductor layer included in the conductive semiconductor structure 13 to fully contact various portions of the corresponding structure surface at the corners. Therefore, the setting height of the regional surface of the conductive semiconductor structure 13 corresponding to the backlight side can also be less than the setting height of the regional surface of the backlight side corresponding to the first doping region 11 (or the second doping region 12) of the opposite conductivity type to the conductive semiconductor structure 13. When the setting height of the regional surface of the conductive semiconductor structure 13 corresponding to the backlight side can be greater than or equal to the setting height of the regional surface of the backlight side corresponding to the first doping region 11 (or the second doping region 12) of the opposite conductivity type to the conductive semiconductor structure 13, the part of the doped semiconductor layer included in the conductive semiconductor structure 13 filling the corner can be staggered with the side wall of the doped semiconductor layer included in the first doping region 11 of the opposite conductivity type to itself (or the doped semiconductor layer included in the second doping region 12), ensuring that the conductive semiconductor structure 13 has a larger side effective electrical contact area with the first doping region 11 (or the second doping region 12) of the opposite conductivity type to itself.

[0218] Specifically, when the height of the doped semiconductor layer included in the conductive semiconductor structure on the backlight side is less than the height of the doped semiconductor layer included in the first doped region (or the doped semiconductor layer included in the second doped region) of opposite conductivity type to the conductive semiconductor structure on the backlight side, the size of the height difference can be determined based on the manufacturing process of the conductive semiconductor structure in the actual application scenario. Exemplarily, the difference between the height of the surface of the doped semiconductor layer included in the region of the conductive semiconductor structure corresponding to the backlight side and the height of the surface of the doped semiconductor layer included in the region of the first doped region and the second doped region corresponding to the backlight side and opposite conductivity type to the conductive semiconductor structure can be greater than or equal to -2μm and less than or equal to -0.4μm. For example, the height difference can be -2μm, -1.8μm, -1.5μm, -1.2μm, -1μm, -0.8μm, or -0.4μm, etc.

[0219] The type of physical spacer layer formed on the first and second doped regions can be determined based on the conductive properties of the physical spacer layer and the actual application scenario. For example, the physical spacer layer can include a transparent conductive layer to enhance carrier transport efficiency. Alternatively, the physical spacer layer can include a surface passivation layer made of a material such as silicon nitride, aluminum oxide, or titanium oxide to passivate surface defects on the side of the first and second doped regions facing away from the semiconductor substrate. Alternatively, the physical spacer layer can include a doped silica glass layer (the doped silica glass layer can be a phosphosilicate glass layer or a borosilicate glass layer, etc.) formed when the first and / or second doped regions of silicon material are doped using a diffusion process. The doped silica glass layer can be a conductive layer or an insulating layer. Specifically, when the thickness of the doped silica glass layer is relatively large, the doped silica glass layer can be an insulating layer; when the thickness of the doped silica glass layer is relatively small, the doped silica glass layer can be a conductive layer with a certain conductivity. In this application, a doped silica glass layer with a certain conductivity is referred to as a conductive doped silica glass layer. Hereinafter, the term "doped silica glass layer" defaults to an insulating doped silica glass layer.

[0220] In actual application, the height of the side effective electrical contact surface is defined as the side effective electrical contact height Z. The following is an explanation of at least two cases based on the different formation positions of the first doped region and the second doped region on the backlight side:

[0221] In the first embodiment, as shown in Figures 64 and 66, the first doped region 11, the second doped region 12, and at least a portion of the conductive semiconductor structure 13 are all formed within the semiconductor substrate, and the surface of each of the first doped region 11, the second doped region 12, and the conductive semiconductor structure 13 facing away from the light-facing surface of the semiconductor substrate is flush with the surface of the corresponding region on the backlight side of the semiconductor substrate. In this embodiment, the contact surface between the conductive semiconductor structure 13 and the first doped region 11 or the second doped region 12, which has a conductivity type opposite to that of the conductive semiconductor structure, comprises a lateral effective electrical contact surface; the height of the lateral effective electrical contact surface is a lateral effective electrical contact height Z, which is equal to the minimum of a first depth and a second depth; the first depth is the depth of the first doped region 11 or the second doped region 12, which has a conductivity type opposite to that of the conductive semiconductor structure 13, and the second depth is the depth of the portion of the conductive semiconductor structure 13 within the semiconductor substrate. For example, when the depth of one of the first doped region 11 and the second doped region 12 having a conductivity type opposite to that of the conductive semiconductor structure 13 is the depth H1 of the first doped region 11 , and the depth H of the conductive semiconductor structure 13 is greater than H1 , the above-mentioned side effective electrical contact height Z is equal to H1 .

[0222] In a second embodiment, the first doped region or the second doped region having a conductivity type opposite to that of the conductive semiconductor structure, and the conductive semiconductor structure both include a doped semiconductor layer formed on a backlight surface of a semiconductor substrate; the contact surface between the first doped region or the second doped region having a conductivity type opposite to that of the conductive semiconductor structure and the conductive semiconductor structure includes a lateral effective electrical contact surface; the height of the lateral effective electrical contact surface is a lateral effective electrical contact height Z. The lateral effective electrical contact height Z is equal to the minimum of a first thickness and a second thickness; along the extension direction of the lateral effective electrical contact surface, the first thickness is the thickness of the lateral effective electrical contact surface corresponding to the first doped region or the second doped region having a conductivity type opposite to that of the conductive semiconductor structure, and the second thickness is the thickness of the lateral effective electrical contact surface corresponding to the conductive semiconductor structure. For example, along the extension direction of the lateral effective electrical contact surface, when the thickness of the lateral effective electrical contact surface corresponding to the first doped region or the second doped region having a conductivity type opposite to that of the conductive semiconductor structure is equal to the thickness H2 of the second doped region, and the thickness H of the conductive semiconductor structure is greater than H2, the lateral effective electrical contact height Z is equal to H2.

[0223] Specifically, in the second case above, when the first doped region, the second doped region, and the conductive semiconductor structure all include a doped semiconductor layer formed on the backlight surface, the side effective electrical contact height Z and the effective electrical contact area corresponding to the conductive semiconductor structure can be described in combination with the relationship between the conductivity types of the conductive semiconductor structure and the first doped region and the second doped region, the arrangement height of the doped semiconductor layer included in the first doped region and the second doped region on the semiconductor substrate, and the formation of the conductive semiconductor structure:

[0224] The first type is that the conductive semiconductor structure is integrally continuous with the first doped region. In this case, the conductive semiconductor structure and the second doped region have opposite conductivity types. In this case, when the conductive semiconductor structure is located only between the first doped region and the second doped region, as shown in Figure 15, if the semiconductor substrate is planar, the effective electrical contact area corresponding to the conductive semiconductor structure is H2×W, and the lateral effective electrical contact height Z is H2, where H2 is the thickness of the second doped region. As shown in Figure 16, if the height of the doped semiconductor layer included in the first doped region and the conductive semiconductor structure on the semiconductor substrate is greater than the height of the second doped region, the effective electrical contact area corresponding to the conductive semiconductor structure is H×W, and the lateral effective electrical contact height Z is H, where H is the thickness of the conductive semiconductor structure. As shown in Figure 17, if the height of the doped semiconductor layer included in the first doped region and the conductive semiconductor structure on the semiconductor substrate is less than the height of the doped semiconductor layer included in the second doped region, the effective electrical contact area corresponding to the conductive semiconductor structure is H2×W, and the lateral effective electrical contact height Z is H2.

[0225] In the first case, when the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, as shown in Figures 18 to 20 , regardless of whether the doped semiconductor layers included in the first doped region and the second doped region are disposed at the same height on the semiconductor substrate, if the second conductive semiconductor portion 18 is disposed in an electrical configuration, the effective electrical contact area of ​​the conductive semiconductor structure is H2×W+W×X, and the effective lateral electrical contact height Z is H2; if the second conductive semiconductor portion 18 is disposed in an insulating configuration, the effective electrical contact area of ​​the conductive semiconductor structure is H2×W, and the effective lateral electrical contact height Z is H2. Where X is one of X1, X2, or X3 described above.

[0226] The second type is that the conductive semiconductor structure is integrally continuous with the second doped region. In this case, the conductive semiconductor structure has the opposite conductivity type to the first doped region. In this case, when the conductive semiconductor structure is located only between the first doped region and the second doped region, as shown in Figure 21, if the semiconductor substrate is planar, the effective electrical contact area corresponding to the conductive semiconductor structure is H1×W, and the lateral effective electrical contact height Z is H1, where H1 is the thickness of the first doped region. As shown in Figure 22, if the height of the doped semiconductor layer included in the second doped region and the conductive semiconductor structure on the semiconductor substrate is less than the height of the doped semiconductor layer included in the first doped region, the effective electrical contact area corresponding to the conductive semiconductor structure is H1×W, and the lateral effective electrical contact height Z is H1. As shown in Figure 23, if the height of the doped semiconductor layer included in the second doped region and the conductive semiconductor structure on the semiconductor substrate is greater than the height of the doped semiconductor layer included in the first doped region, the effective electrical contact area corresponding to the conductive semiconductor structure is H×W, and the lateral effective electrical contact height Z is H.

[0227] In the second case, when the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, as shown in Figures 24 to 26, regardless of whether the setting heights of the doped semiconductor layers included in the first doped region and the second doped region on the semiconductor substrate are the same, if the setting method corresponding to the second conductive semiconductor portion 18 is an electrical setting, then the effective electrical contact area corresponding to the conductive semiconductor structure is H1×W+W×X, and the side effective electrical contact height Z is H1; if the setting method corresponding to the second conductive semiconductor portion 18 is an insulating setting, then the effective electrical contact area corresponding to the conductive semiconductor structure is H1×W, and the side effective electrical contact height Z is H1.

[0228] The third type is that the conductive semiconductor structure is not integrally continuous with the first doped region and the second doped region, and the conductive semiconductor structure has an opposite conductivity type to the first doped region. In this case, as shown in FIG33 , if the height of the doped semiconductor layer included in the second doped region and the conductive semiconductor structure on the semiconductor substrate is greater than the height of the doped semiconductor layer included in the first doped region, the effective electrical contact area corresponding to the conductive semiconductor structure is H×W, and the effective lateral electrical contact height Z is H. As shown in FIG27 to FIG32 and FIG34 to FIG38 , the effective electrical contact area corresponding to the conductive semiconductor structure under the remaining distributions is H1×W, and the effective lateral electrical contact height Z is H1.

[0229] Fourth, the conductive semiconductor structure is not integrally continuous with the first doped region and the second doped region, and the conductive semiconductor structure and the second doped region have opposite conductivity types. In this case, as shown in Figures 43 and 44, if the height of the doped semiconductor layer included in the first doped region and the conductive semiconductor structure on the semiconductor substrate is greater than the height of the doped semiconductor layer included in the second doped region, the effective electrical contact area corresponding to the conductive semiconductor structure is H×W, and the lateral effective electrical contact height Z is H. As shown in Figures 40 to 42 and Figures 45 to 49, the effective electrical contact area corresponding to the conductive semiconductor structure in the remaining distributions is H2×W, and the lateral effective electrical contact height Z is H2.

[0230] It is worth noting that, from the first to fourth cases described above, the effective side electrical contact height of the first doped region and the second doped region electrically coupled through the conductive semiconductor structure is Z. As shown in Figures 15, 18, 21, 27 to 29, 34 and 35, and 40 and 42, when the backlight surface of the semiconductor substrate is a plane, the effective side electrical contact height Z is equal to the thickness of the one of the first doped region 11 and the second doped region 12 that has an opposite conductivity type to the conductive semiconductor structure 13 (i.e., H1 or H2);

[0231] Alternatively, as shown in Figures 16, 23, 33, 43, and 44, the height of the doped semiconductor layer included in the one of the first doped regions 11 and the second doped region 12 having a conductivity type opposite to that of the conductive semiconductor structure 13 on the backlight side of the semiconductor substrate is less than the height of the doped semiconductor layer included in the conductive semiconductor structure 13 on the backlight side of the semiconductor substrate, and a portion of the side surface of the doped semiconductor layer included in the one of the first doped region 11 and the second doped region 12 having a conductivity type opposite to that of the conductive semiconductor structure 13 is in electrical contact with the semiconductor substrate, and a portion of the side surface of the doped semiconductor layer included in the one of the first doped region 11 and the second doped region 12 having a conductivity type opposite to that of the conductive semiconductor structure 13 is in electrical contact with the conductive semiconductor structure 13, then the effective side electrical contact height Z is equal to the thickness (i.e., H) of the conductive semiconductor structure 13.

[0232] Or, as shown in Figures 17, 19, 20, 22, 24 to 26, 30 to 32, and 37 to 39, when the doped semiconductor layers included in the first doping region 11 and the second doping region 12 are arranged at different heights on the backlight side of the semiconductor substrate, and the parts corresponding to the conductive semiconductor structure in the side surfaces of the doped semiconductor layers included in the one of the first doping region 11 and the second doping region 12 with the opposite conductivity type to the conductive semiconductor structure 13 are all electrically in contact with the conductive semiconductor structure, the side effective electrical contact height Z is equal to the thickness of the one of the first doping region 11 and the second doping region 12 with the opposite conductivity type to the conductive semiconductor structure 13.

[0233] Furthermore, as can be seen from the above, when the height of the doped semiconductor layer of the first and second doped regions with the opposite conductivity type to the conductive semiconductor structure is lower than the height of the doped semiconductor layer of the conductive semiconductor structure with the opposite conductivity type, and a portion of the side surface of the doped semiconductor layer of the first and second doped regions with the opposite conductivity type to the conductive semiconductor structure is in electrical contact with the semiconductor substrate, and another portion of the side surface of the doped semiconductor layer of the first and second doped regions with the opposite conductivity type to the conductive semiconductor structure is in electrical contact with the conductive semiconductor structure, a portion of the side surface of the doped semiconductor layer of the first and second doped regions with the opposite conductivity type to the conductive semiconductor structure is in electrical contact with the semiconductor substrate, resulting in only a portion of the side surface of the doped semiconductor layer of the first and second doped regions with the opposite conductivity type to the conductive semiconductor structure being in electrical contact with the conductive semiconductor structure. In this case, the difference between the height of the surface of the region of the conductive semiconductor structure facing the backlight side and the height of the surface of the region of the conductive semiconductor structure facing the backlight side can be determined based on the manufacturing process of the first and second doped regions in actual application scenarios. For example, in this case, along the thickness direction of the semiconductor substrate, on the backlight side, the difference between the height of the surface of the region corresponding to the conductive semiconductor structure and the height of the surface of the region corresponding to the doped semiconductor layer of the first and second doped regions having a conductivity type opposite to that of the conductive semiconductor structure can be greater than or equal to 0.4 μm and less than or equal to 2 μm. For example, in this case, the difference between the height of the surface of the region corresponding to the conductive semiconductor structure on the backlight side and the height of the surface of the region corresponding to the first and second doped regions having a conductivity type opposite to that of the conductive semiconductor structure on the backlight side can be 0.4 μm, 0.6 μm, 0.8 μm, 1 μm, 1.5 μm, 1.8 μm, or 2 μm, etc. In this case, taking the case where the first doped region has a conductivity type opposite to that of the conductive semiconductor structure as an example, when forming the doped semiconductor layer included in the first doped region, it is difficult for the material used to form the doped semiconductor layer included in the first doped region to fill the corners caused by the height difference, thereby easily making it difficult for the doped semiconductor layer included in the first doped region to fully contact various portions of the surface of the semiconductor substrate (or, the semiconductor substrate and the conductive semiconductor structure) at the corners. Therefore, if the difference between the height of the surface of the area of ​​the conductive semiconductor structure corresponding to the backlight side and the height of the surface of the area of ​​the first doping region and the second doping region corresponding to the backlight side and having the opposite conductivity type to the conductive semiconductor structure is within the above range, the part of the doped semiconductor layer filled in the corner of the first doping region can be staggered with the side wall of the conductive semiconductor structure having the opposite conductivity type to itself, ensuring that the conductive semiconductor structure has a larger side effective electrical contact area with the first doping region having the opposite conductivity type to itself.When the conductivity type of the second doped region is opposite to that of the conductive semiconductor structure, the corresponding beneficial effects are the same as the above effects, which will not be described in detail here.

[0234] The effective electrical contact surface corresponding to each conductive semiconductor structure includes a side effective electrical contact surface and / or a top effective electrical contact surface. Specifically, the effective electrical contact area S is equal to α×W×X+β×Z×W. Wherein, α and β are both constants greater than or equal to 0 and less than or equal to 1. The specific sizes of α and β can be determined based on the formation position of the conductive semiconductor structure, the conductive properties of the physical spacer layer, and the specific structure of the back contact battery.

[0235] For example, if the conductive semiconductor structure does not include a second conductive semiconductor portion disposed above the first doped region and / or the portion of the second doped region facing away from the semiconductor substrate, or if the conductive semiconductor structure includes the second conductive semiconductor portion in an insulating configuration, then α is equal to 0. In this case, β is greater than 0 and less than or equal to 1, and the effective electrical contact area is equal to β×Z×W.

[0236] For example, if both the first doped region and the second doped region are formed within the semiconductor substrate, and the conductive semiconductor structure is formed only on the semiconductor substrate, or if one of the first doped region and the second doped region has a conductivity type opposite to that of the conductive semiconductor structure and is located within the semiconductor substrate, and the conductive semiconductor structure is disposed only above a portion of the first doped region and the second doped region that has a conductivity type opposite to that of the conductive semiconductor structure and is facing away from the semiconductor substrate, then β is equal to 0. The effective electrical contact area is the effective electrical contact area of ​​the top surface. Furthermore, in this case, α is greater than 0 and less than or equal to 1. The effective electrical contact area is equal to α×W×X.

[0237] For example, if the configuration corresponding to the second conductive semiconductor portion included in the conductive semiconductor structure is an electrical configuration, and the effective electrical contact surface between the first doped region and the second doped region having a conductivity type opposite to that of the conductive semiconductor structure and the conductive semiconductor structure also includes a lateral effective electrical contact surface, then α is greater than 0 and less than or equal to 1, and β is greater than or equal to 0 and less than or equal to 1. It can be understood that the effective electrical contact area S is equal to α×W×X+β×Z×W.

[0238] Among them, when α is greater than 0, the specific size of α can be determined according to the electrical conductivity of the top effective electrical contact surface between the second conductive semiconductor portion and the one with the opposite conductivity type to the conductive semiconductor structure in the first doping region and the second doping region. For example: when the second conductive semiconductor portion is directly formed on the portion of the one with the opposite conductivity type to the conductive semiconductor structure in the first doping region and the second doping region that is away from the semiconductor substrate, α can be equal to 1. Alternatively, when a physical spacing layer with good conductive properties such as a transparent conductive layer is formed between the second conductive semiconductor portion and the one with the opposite conductivity type to the conductive semiconductor structure in the first doping region and the second doping region, α can also be equal to 1. Alternatively, when a physical spacing layer with poor conductive properties such as a conductive doped silicon glass layer is formed between the second conductive semiconductor portion and the one with the opposite conductivity type to the conductive semiconductor structure in the first doping region and the second doping region, α can also be less than 1.

[0239] When β is greater than 0, the specific value of β can be determined based on the electrical conductivity between the conductive semiconductor structure and the side surface of the first doped region and the second doped region having the opposite conductivity type to the conductive semiconductor structure. For example, when the conductive semiconductor structure, the first doped region, and the second doped region all include doped semiconductor layers, and the doped semiconductor layer of the conductive semiconductor structure directly contacts the side surface of the doped semiconductor layer of the first doped region and the second doped region having the opposite conductivity type to the conductive semiconductor structure, β can be equal to 1. Alternatively, β can be greater than or equal to α.

[0240] In the above case, the effective electrical contact area can be controlled by adjusting the sizes of α and β to obtain a suitable effective electrical contact surface area and achieve an optimized design of the product configuration.

[0241] Secondly, in actual application, the orthographic projection area of ​​the conductive semiconductor structure on the backlight side may affect the effective electrical contact area corresponding to the conductive semiconductor structure, thereby affecting the magnitude of the leakage current formed by the first doping region and the second doping region through the conductive semiconductor structure, and further affecting the reverse breakdown voltage of the back contact battery and the working efficiency of the back contact battery under normal working conditions. Based on this, the ratio between the orthographic projection area of ​​each conductive semiconductor structure on the backlight side and the area of ​​the backlight surface, as well as the range of the conductive semiconductor structure on the first doping region and / or the second doping region can be determined according to the requirements for the reverse breakdown voltage and working efficiency of the back contact battery in the actual application scenario and the accuracy of the manufacturing equipment for the actual manufacturing of the back contact battery.

[0242] For example, the orthographic projection area of ​​the portion of the at least one conductive semiconductor structure located between the first doping region and the second doping region on the backlight side is S1, the area of ​​the backlight side is S2, and the ratio of S1 to S2 may be greater than or equal to 8.5×10 -7%, and less than or equal to 6.67×10 -1 %. For example, the ratio of the orthographic projection area of ​​at least one conductive semiconductor structure on the backlight side to the area of ​​the backlight side may be 8.5×10 -7 %, 1×10 -6 %, 1×10 -5 %, 1×10 -4 %, 1×10 -3 %, 1×10 -2 %, 1×10 -1 % or 6.67×10 -1 %. In this case, the magnitude of the reverse breakdown voltage of the back-contact cell that can be reduced by providing a conductive semiconductor structure due to a small S1 can be prevented, and the back-contact cell can be prevented from burning due to local heat concentration, effectively reducing the risk of hot spots in photovoltaic modules including the back-contact cell provided by the embodiments of the present application. It can also prevent the need for strict etching accuracy to form a smaller conductive semiconductor structure, thereby reducing the difficulty of etching. Furthermore, it can also prevent the leakage current of the back-contact cell from being large under normal operating conditions due to a large S1, further ensuring that the photovoltaic module including the back-contact cell provided by the embodiments of the present application has a high photoelectric conversion efficiency in the forward voltage region.

[0243] The specific value of the orthographic projection area of ​​the portion of each conductive semiconductor structure located between the first doped region and the second doped region on the backlight side can be determined based on the aforementioned ratio and the specific dimensions of the semiconductor substrate used in actual application scenarios. For example, if the area of ​​the backlight side of the semiconductor substrate is 359.0364 square centimeters, the orthographic projection area of ​​the portion of at least one conductive semiconductor structure located between the first doped region and the second doped region on the backlight side can be a value greater than or equal to 300 square microns and less than or equal to 2.4 square centimeters.

[0244] Preferably, the ratio between S1 and S2 can be greater than or equal to 7.2×10 -6 %, and less than or equal to 4.6×10 -3 %. For example, the ratio between S1 and S2 can be 7.2×10 -6 %, 1×10 -5 %, 1×10 -4 %, 1×10 -3 % or 4.6×10 -3%. As for the preferred range of the positive projection area of ​​the portion of the conductive semiconductor structure located between the first doping region and the second doping region on the backlight side, it can be determined based on the above ratio and the specific size of the semiconductor substrate used in the actual application scenario. For example: when the area of ​​the backlight side of the semiconductor substrate is 34944 square millimeters, the positive projection area of ​​the portion of at least one conductive semiconductor structure located between the first doping region and the second doping region on the backlight side can be any value greater than or equal to 0.0025 square millimeters and less than or equal to 1.6 square millimeters. In this case, the ratio between S1 and S2 has a large optional range, and a suitable solution can be selected based on the requirements of the back contact battery format, leakage prevention, and reduction of hot spot risks in the actual application scenario, which is conducive to improving the applicability of the back contact battery provided in this application in different application scenarios. In addition, it can also prevent the effective electrical contact area corresponding to a single conductive semiconductor structure from being too small or too large. This effect can be referred to the previous text and will not be repeated here.

[0245] In the case where the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion, the area ratio of the orthographic projection area S4 of the second conductive semiconductor portion on the backlight side can be determined based on the requirements for the reverse breakdown voltage and working efficiency of the back-contact battery in the actual application scenario, as well as the accuracy of the manufacturing equipment for actually manufacturing the back-contact battery, and no specific limitation is made here.

[0246] For example, the ratio of S4 to S2 may be greater than 0 and less than or equal to 4.6×10 -3 %. For example, the ratio between S4 and S2 can be 0.1×10 -3 %, 0.5×10 -3 %, 1.0×10 -3 %, 1.5×10 -3 %, 2×10 -3 %, 2.5×10 -3 %, 3×10 -3 %, 4×10 -3 % or 4.6×10 -3%. As for the preferred range of the orthographic projection area of ​​the second conductive semiconductor portion on the backlight side, it can be determined based on the above ratio and the specific size of the semiconductor substrate used in the actual application scenario. For example: when the area of ​​the backlight side of the semiconductor substrate is 34944 square millimeters, the orthographic projection area of ​​the second conductive semiconductor portion on the backlight side can be any value greater than 0 and less than or equal to 1.6 square millimeters. In this case, it can be prevented that the ratio between S4 and S2 is large, which makes the width of the second conductive semiconductor portion on the first doping region and / or the second doping region larger and affects the formation of the electrode structure. While reducing the difficulty of manufacturing the electrode structure, it can also ensure that the electrode structure has good contact performance with the corresponding doping region, and that the electrode structure itself has good transmission performance.

[0247] As for the specific size of the effective electrical contact area corresponding to each conductive semiconductor structure, it can be determined based on the formation range of the conductive semiconductor structure, the requirements for the reverse breakdown voltage and working efficiency of the back-contact battery in the actual application scenario, the format size requirements for the back-contact battery in the actual application scenario, and the accuracy of the manufacturing equipment used to actually manufacture the back-contact battery.

[0248] In the case where the conductive semiconductor structure includes the second conductive semiconductor portion, the specific size of the effective electrical contact area is divided into the following two cases for description according to different configurations of the conductive semiconductor structure:

[0249] For example, when the conductive semiconductor structure is insulated and disposed on a portion of the first doping region and / or the second doping region that is in electrical contact with itself, the effective electrical contact area corresponding to at least one conductive semiconductor structure may be greater than or equal to 0.000025 mm 2 , and less than or equal to 0.016mm 2 For example, in this case, the effective electrical contact area corresponding to at least one conductive semiconductor structure may be 0.000025 mm 2 , 0.0001mm 2 , 0.0012mm 2 , 0.0015mm 2 , 0.0018mm 2 , 0.002mm 2 , 0.0022mm 2 , 0.0025mm 2 , 0.005mm 2 , 0.01mm 2 or 0.016mm 2Etc. In this case, if the effective electrical contact area corresponding to at least one conductive semiconductor structure is within the above range, it can prevent the magnitude of the reverse breakdown voltage of the back contact battery that can be reduced by setting the conductive semiconductor structure from being low due to the small effective electrical contact area corresponding to the conductive semiconductor structure, prevent the back contact battery from being burned due to local heat concentration, and effectively reduce the risk of hot spots in the photovoltaic module including the back contact battery provided by the embodiment of the present application; it can also prevent the strict requirements on etching accuracy for forming a smaller conductive semiconductor structure, thereby reducing the difficulty of etching. In addition, it can also prevent the leakage current of the back contact battery under normal working conditions from being large due to the large effective electrical contact area corresponding to the conductive semiconductor structure, further ensuring that the photovoltaic module including the back contact battery provided by the embodiment of the present application has a higher photoelectric conversion efficiency in the forward voltage region; it can also prevent the W and / or Z values ​​from being larger due to the increase in the effective electrical contact area corresponding to the conductive semiconductor structure, thereby further expanding the scope of application of the back contact battery provided by the embodiment of the present application.

[0250] For example, when the configuration of the conductive semiconductor structure is electrical, the effective electrical contact area of ​​at least one conductive semiconductor structure may be greater than or equal to 0.000175 mm 2 , and less than or equal to 1.616mm 2 For example, in this case, the effective electrical contact area corresponding to at least one conductive semiconductor structure may be 0.000175 mm 2 , 0.001mm 2 , 0.005mm 2 , 0.01mm 2 , 0.02mm 2 , 0.04mm 2 , 0.06mm 2 , 0.08mm 2 , 0.1mm 2 , 0.2mm 2 , 0.6mm 2 , 1mm 2 , 1.2mm 2 or 1.616mm 2 The beneficial effect in this case is similar to that in the case where the conductive semiconductor structure is insulated and arranged on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, and the effective electrical contact area corresponding to at least one conductive semiconductor structure is greater than or equal to 0.000025 mm 2 , and less than or equal to 0.016mm 2 The beneficial effects are similar and will not be described here.

[0251] When the conductive semiconductor structure is located only between the first doped region and the second doped region, only the sidewalls of the conductive semiconductor structure are in contact with the first doped region and the second doped region, respectively. In this case, the effective electrical contact area corresponding to the conductive semiconductor structure can refer to the effective electrical contact area corresponding to the portion of the conductive semiconductor structure that is insulated and disposed in electrical contact with the first doped region and / or the second doped region, as described above, and will not be further described here.

[0252] As for the specific size of each conductive semiconductor structure, it can be determined based on the specific formation position of the portion of each conductive semiconductor structure between the first doping region and the second doping region, the range in which the conductive semiconductor structure is set on the first doping region and / or the second doping region, and the actual application scenario.

[0253] 2 to 4 , the width of the spacer region between the first doping region 11 and the second doping region 12 is D1. Along the extending direction of the spacer region, the width of the conductive semiconductor structure 13 is W, and 0.5D1≤W≤6D1.

[0254] It should be noted that the extending direction of the spacer region is a direction parallel to the backlight surface of the semiconductor substrate and perpendicular to the width of the spacer region.

[0255] When the above technical solution is adopted, the width of the conductive semiconductor structure 13 along the extension direction of the spacer region satisfies 0.5D1≤W≤6D1. In this case, by adjusting the value of W, the effective electrical contact area between the conductive semiconductor structure 13 and the first and second doped regions, as well as the area ratio of the portion of the conductive semiconductor structure 13 that effectively contacts the first and second doped regions on the backlight side can be effectively adjusted. This prevents the magnitude of the reverse breakdown voltage of the back-contact battery that can be reduced by the provision of the conductive semiconductor structure 13 due to a small effective electrical contact area between a single conductive semiconductor structure 13 and the first and second doped regions, as well as a small total area ratio of the portion of all conductive semiconductor structures 13 that effectively contacts the first and second doped regions on the backlight side, thereby preventing the back-contact battery from burning due to local heat concentration. Within a certain range, smaller conductive semiconductor structures 13 have higher requirements for etching precision. Therefore, setting W≥0.5D1 can further reduce the manufacturing difficulty of forming the conductive semiconductor structure 13 on the backlight side. Furthermore, each conductive semiconductor structure 13 can be considered a local recombination center disposed between the first doped region and the second doped region. Therefore, when W is within the above range, it is possible to prevent a large local leakage current between the first doped region and the second doped region due to a large W value, thereby ensuring that the photovoltaic module including the back-contact cell provided by the embodiments of the present application has a high photoelectric conversion efficiency in the forward voltage region.

[0256] Specifically, W can be any value greater than or equal to 0.5D1 and less than or equal to 6D1. For example, the value of W can be equal to 0.5D1, D1, 2D1, 3D1, 4D1, 5D1 or 6D1.

[0257] Preferably, W can be any value greater than or equal to 0.5D1 and less than or equal to 3D1. For example, the value of W can be equal to 0.5D1, 0.8D1, D1, 1.5D1, 2D1, 2.5D1 or 3D1, etc. In this case, in actual application, not only the width of the conductive semiconductor structure along the extension direction of the spacing region will affect the effective electrical contact area between the conductive semiconductor structure and the first doping region and the second doping region, but also the thickness of the conductive semiconductor structure (and, in the case where the corresponding arrangement of the conductive semiconductor structure is to be electrically arranged on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, the width of the portion of the conductive semiconductor structure arranged on the first doping region and / or the second doping region; or the doping concentration of impurities in the conductive semiconductor structure, etc.) may also affect the size of the effective electrical contact area. For example, when the doped semiconductor layers included in the first doped region and the second doped region are arranged at different heights on the semiconductor substrate, and the smaller of the two is smaller than the height of the doped semiconductor layer included in the conductive semiconductor structure on the semiconductor substrate, and the smaller of the two is of opposite conductivity to the conductive semiconductor structure, the greater the thickness of the doped semiconductor layer included in the conductive semiconductor structure, the greater the effective electrical contact area. In the above case, the width W of the conductive semiconductor structure along the extension direction of the spacing region is within the above range, and a predetermined arrangement space can be reserved for at least the thickness range of the conductive semiconductor structure and / or the arrangement width range under the electrical arrangement, thereby preventing the leakage loss of the back contact battery from being reduced to a small extent due to the larger thickness, width W and arrangement width of the conductive semiconductor structure under the electrical arrangement, thereby ensuring that the back contact battery has a relatively high working efficiency.

[0258] The width of the conductive semiconductor structure may be determined according to the orthographic projection area of ​​the conductive semiconductor structure on the backlight side and the range of the conductive semiconductor structure on the first doping region and / or the second doping region.

[0259] For example, as shown in FIG3 , when the conductive semiconductor structure 13 is at least partially located between two adjacent strip-shaped doped regions 14 belonging to the first and second doped regions, the following are defined: in the first doped region, the width of the strip-shaped doped region 14 in contact with the conductive semiconductor structure 13 is D2; in the second doped region, the width of the strip-shaped doped region 14 in contact with the conductive semiconductor structure 13 is D3; along the distribution direction of the strip-shaped doped regions 14 of opposite conductivity type, the length of the conductive semiconductor structure 13 is D, where D1≤D≤D1+D2+D3. In this case, as shown in FIG3 , after the back-contact cell layout is determined, D1, D2, and D3 are fixed values. Based on this, when the conductive semiconductor structure 13 is at least partially located between two adjacent strip-shaped doping regions 14 belonging to the first doping region and the second doping region respectively, if D is equal to D1, the conductive semiconductor structure 13 located between the two adjacent strip-shaped doping regions 14 with opposite conductivity types can be electrically contacted with the two adjacent strip-shaped doping regions 14 with opposite conductivity types along the arrangement direction of the strip-shaped doping regions 14 with opposite conductivity types, respectively, to ensure that the first doping region 11 and the second doping region can be electrically connected through the conductive semiconductor structure 13; at the same time, the orthographic projection area of ​​the conductive semiconductor structure 13 on the backlight side can also be precisely controlled to ensure that the hot spot risk corresponding to the back-contact battery and the working efficiency under normal operation can accurately meet the working requirements. Secondly, as shown in Figures 7 to 9, the D value can also be greater than D1 and less than or equal to D1+D2+D3. In this case, the conductive semiconductor structure 13 can not only be located between two adjacent strip-shaped doping regions 14 of opposite conductivity types, but can also be set on at least one of the two adjacent strip-shaped doping regions 14 of opposite conductivity types. This can avoid the need for strict etching accuracy in order to obtain only the conductive semiconductor structure 13 located only between the two adjacent strip-shaped doping regions 14 of opposite conductivity types, thereby reducing the etching difficulty. Furthermore, when the conductive semiconductor structure 13 is electrically disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, the size of the effective electrical contact area can be adjusted by adjusting the D value, which is beneficial for achieving a balance between the reverse breakdown voltage and leakage loss of the back-contact battery, thereby facilitating the back-contact battery to have good operating performance.

[0260] Preferably, the D value can satisfy In this case, the carriers collected by the first doping region and the second doping region need to be conducted out through the electrode structure that is in ohmic contact with itself. Based on this, along the width direction of the strip doping region, the first doping region and the second doping region, along the extension direction of the strip doping region, need to directly make ohmic contact with the electrode structure, and the ohmic contact area will occupy a certain width. In this case, when This helps prevent the need for strict etching accuracy to form a conductive semiconductor structure with a smaller width due to the smaller width of the conductive semiconductor structure, thereby reducing the difficulty of etching. It also helps prevent the situation where the conductive semiconductor structure is electrically configured, where the smaller width of the conductive semiconductor structure results in a smaller effective electrical contact area, leading to poor hot spot reduction in back-contact cells. Furthermore, it helps prevent the electrode structure from being unable to make ohmic contact with the strip-shaped doped regions included in the first and second doped regions due to the larger width of the conductive semiconductor structure, thereby ensuring that the current collected by the first and second doped regions can be conducted through the electrode structure, thereby facilitating the formation of photocurrent.

[0261] For example, as shown in FIG4 , when the conductive semiconductor structure 13 is at least partially located between a strip-shaped doped region 14 included in one of the first and second doped regions and an adjacent connection region 15 included in the other, the following are defined: the width of the connection region 15 belonging to one of the first and second doped regions and in contact with the conductive semiconductor structure 13 is W1; the length of the strip-shaped doped region 14 belonging to the other of the first and second doped regions and in contact with the conductive semiconductor structure 13 is W2. Furthermore, along the width direction of the spacing region, the length of the conductive semiconductor structure 13 is D, and D1 ≤ D ≤ D1 + W1 + W2. In this case, after the back-contact cell layout is determined, D1, W1, and W2 are fixed values. Based on this, when the conductive semiconductor structure 13 is at least partially located between a strip-shaped doping region 14 included in one of the first doping region and the second doping region and the adjacent connection region 15 included in the other, when D is equal to D1, the conductive semiconductor structure 13 located between the strip-shaped doping region 14 and the connection region 15 of opposite conductivity type and adjacent to each other can be electrically contacted with the strip-shaped doping region 14 and the connection region 15 of opposite conductivity type and adjacent to each other along the arrangement direction of the first doping region and the second doping region, respectively, to ensure that the first doping region and the second doping region can be electrically connected through the conductive semiconductor structure 13; at the same time, the positive projection area of ​​the conductive semiconductor structure 13 on the backlight side can also be precisely controlled to ensure that the hot spot risk corresponding to the back-contact battery and the working efficiency under normal operation can accurately meet the working requirements. Secondly, as shown in FIG10 , the D value can also be greater than D1 and less than or equal to W1+W2+D1. In this case, the conductive semiconductor structure 13 can not only be located between the strip-shaped doped regions 14 and the connecting regions 15 of opposite conductivity types and adjacent to each other, but can also be arranged on at least one of the strip-shaped doped regions 14 and the connecting regions 15 of opposite conductivity types and adjacent to each other. This can avoid the need for strict etching accuracy in order to obtain only the conductive semiconductor structure 13 located only between the strip-shaped doped regions 14 and the connecting regions 15 of opposite conductivity types and adjacent to each other, thereby reducing the etching difficulty. Furthermore, when the conductive semiconductor structure 13 is electrically arranged on the portion of the first doped region and / or the second doped region that is in electrical contact with itself, the size of the effective electrical contact area can be adjusted by adjusting the D value, which is beneficial for achieving a balance between the reverse breakdown voltage and leakage loss of the back-contact battery, thereby facilitating the back-contact battery to have good operating performance.

[0262] Preferably, In this case, the carriers collected by the first doping region and the second doping region need to be conducted out through the electrode structure that is in ohmic contact with itself. Based on this, along the extension direction of the strip doping region, the first doping region and the second doping region, along the extension direction of the strip doping region, need to directly make ohmic contact with the electrode structure, and the ohmic contact area will occupy a certain length. In this case, when This helps prevent the need for strict etching accuracy to form a conductive semiconductor structure with a smaller width due to the smaller width of the conductive semiconductor structure above the portion of the first doping region and / or the second doping region that is away from the semiconductor substrate, thereby reducing the difficulty of etching. It also helps prevent the situation where the conductive semiconductor structure is electrically configured, where the smaller width of the conductive semiconductor structure results in a smaller effective electrical contact area, leading to poor results in reducing the risk of hot spots in a back-contact cell by configuring the conductive semiconductor structure. Furthermore, it helps prevent the electrode structure from being unable to make ohmic contact with the strip-shaped doping regions included in the first doping region and the second doping region due to the larger width of the conductive semiconductor structure, thereby ensuring that the current collected by the first doping region and the second doping region can be conducted through the electrode structure, thereby facilitating the formation of photocurrent.

[0263] As for the values ​​of D and W corresponding to the conductive semiconductor structure, they can be determined based on the layout of the back-contact battery in the actual application scenario and the above-mentioned size relationship, and are not specifically limited here.

[0264] Specifically, for example, when the second conductive semiconductor portion is disposed above the portion of the corresponding strip-doped region facing away from the semiconductor substrate along the width direction of the strip-doped region, the width of the second conductive semiconductor portion along the width direction of the strip-doped region can be greater than or equal to one-tenth of the width of the corresponding strip-doped region and less than one-half of the width of the corresponding strip-doped region. In this case, the carriers collected by the first doped region need to be conducted out through an electrode structure that is in ohmic contact with itself. Based on this, along the width direction of the strip-doped region, a portion of the strip-doped region included in the first doped region along its own extension direction needs to be in direct ohmic contact with the electrode structure, and this ohmic contact area will occupy a certain width. In this case, when the width of the second conductive semiconductor portion is greater than or equal to one-tenth of the width of the corresponding strip-shaped doped region and less than one-half of the width of the corresponding strip-shaped doped region, this can prevent the need for strict etching accuracy to form the second conductive semiconductor portion with a smaller width due to the smaller width X1 corresponding to the second conductive semiconductor portion, thereby reducing the etching difficulty. Furthermore, when the second conductive semiconductor portion is electrically configured, the smaller width X1 can prevent the conductive semiconductor structure from having a smaller effective electrical contact area, thereby reducing the effectiveness of reducing the risk of hot spots in a back-contact cell by configuring the conductive semiconductor structure. Furthermore, the larger width X1 of the second conductive semiconductor portion can prevent the electrode structure from being unable to make ohmic contact with the strip-shaped doped region included in the first doped region, thereby ensuring that the current collected by the first doped region can be conducted through the electrode structure, thereby facilitating the formation of photocurrent.

[0265] Secondly, when the first doping region and the second doping region are distributed alternately in a forked-finger shape, as shown in Figures 7 to 9, when the D value of the conductive semiconductor structure 13 is greater than D1; or, as shown in Figure 10, when the W value is greater than D2+2D1 or the W value is greater than D3+2D1, the conductive semiconductor structure 13 is also arranged above the portion of the first doping region and / or the second doping region away from the semiconductor substrate. At this time, the size of the effective electrical contact area corresponding to the conductive semiconductor structure 13 may be affected. Therefore, the setting size of the conductive semiconductor structure 13, the ratio and specific size between the width W and the side effective electrical contact height Z can be determined according to the location where the conductive semiconductor structure 13 is set and the size requirements of the effective electrical contact area in the actual application scenario. No specific limitation is made here.

[0266] For example, when the second conductive semiconductor portion 18 is disposed on the corresponding strip-shaped doped region along the width direction of the strip-shaped doped region, as shown in Figures 7 to 9, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the first doped region, 0.1D2≤X1<0.5D2; and / or, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the second doped region, 0.1D3≤X1<0.5D3. For example, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the first doped region, X1 may be equal to 0.1D2, 0.2D2, 0.25D2, 0.3D2, 0.35D2, or 0.4D2, etc. For example, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the second doped region, X1 may be equal to 0.1D3, 0.2D3, 0.25D3, 0.3D3, 0.35D3, or 0.4D3, etc. In this case, the conductive semiconductor structure 13 is disposed on the strip doped region 14 included in the first doped region along the width direction of the strip doped region 14 as an example for explanation: the carriers collected by the first doped region need to be conducted through the electrode structure that is in ohmic contact with itself. Based on this, along the width direction of the strip doped region 14, a portion of the strip doped region 14 included in the first doped region along its own extension direction needs to be in direct ohmic contact with the electrode structure, and this ohmic contact area will occupy a certain width. In this case, when 0.1D2≤X1<0.5D2, it can prevent the strict etching accuracy required to form the second conductive semiconductor portion 18 with a smaller width due to the smaller width X1 of the second conductive semiconductor portion 18, thereby reducing the etching difficulty. It can also prevent the situation where the configuration corresponding to the second conductive semiconductor portion 18 is an electrical configuration, resulting in a smaller effective electrical contact area corresponding to the conductive semiconductor structure, which may lead to poor effectiveness in reducing the risk of hot spots in back-contact cells by disposing the conductive semiconductor structure. Furthermore, this prevents the electrode structure from failing to establish ohmic contact with the strip-shaped doped regions 14 included in the first doped region due to the larger width X1 of the second conductive semiconductor portion 18, thereby ensuring that the current collected by the first doped region can be conducted through the electrode structure, thereby facilitating the formation of photocurrent. Furthermore, the beneficial effects of 0.1D3≤X1<0.5D3 are similar to those of 0.1D2≤X1<0.5D2 and are not further elaborated here.

[0267] For example, when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, X1 ≤ W ≤ 40X1, and / or the effective electrical contact height of the side surface of the first doped region and the second doped region electrically coupled through the conductive semiconductor structure is Z, and 1 / 1500 of X1 ≤ Z ≤ 1 / 400 of X1. For example, when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, W can be equal to X1, 5X1, 10X1, 15X1, 20X1, 30X1, or 40X1, etc. For example, when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, Z can be equal to 1 / 1500 of X1, 1 / 1000 of X1, 1 / 800 of X1, 1 / 600 of X1, or 1 / 400 of X1. In this case, when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, the effective electrical contact area between the conductive semiconductor structure and the first doped region and the second doped region, respectively, includes not only the contact area between the sidewall of the conductive semiconductor structure and the first doped region or the second doped region, but also the contact area between the second conductive semiconductor portion and the corresponding strip-shaped doped region. Based on this, the effective electrical contact area can be adjusted by adjusting the value of at least one of X1, W, and Z, thereby affecting the reverse breakdown voltage and leakage current of the back-contact battery under normal operating conditions. In this case, when X1≤W≤40X1, the width W of the conductive semiconductor structure has a large optional range. By adjusting the width W of the conductive semiconductor structure, the reverse breakdown voltage and leakage current of the back-contact battery under normal operating conditions can be adjusted, which helps to improve the applicability of the back-contact battery provided by the embodiment of the present application in different application scenarios. In addition, when W is within the above range, it can prevent the high manufacturing precision requirements for the conductive semiconductor structure due to a small W, which helps to reduce the manufacturing difficulty of the back-contact battery. It can also prevent the setting of X1 and / or Z to a large value to achieve the reverse breakdown voltage of the back-contact battery within the operating requirements due to a small W, thereby affecting the formation quality of the electrode structure, etc., and improving the yield of the back-contact battery. At the same time, it can also prevent the leakage current corresponding to a single conductive semiconductor structure from being large due to a large W, ensuring that the back-contact battery has high operating performance under normal operation. In addition, the beneficial effect of 1,500th of X1 ≤ 1,400th of Z ≤ 1,000th of X1 is similar to the beneficial effect of X1 ≤ W ≤ 40X1, and will not be repeated here.

[0268] Exemplarily, when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, 0.03mm≤X1≤0.2mm; and / or, 0.03mm≤W≤8mm. For example: when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, X1 can be equal to 0.03mm, 0.08mm, 0.1mm, 0.15mm, 0.18mm or 0.2mm, etc. For example: when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, W can be equal to 0.03mm, 0.5mm, 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm or 8mm, etc. In this case, when X1 is within the above range, it can prevent the high manufacturing precision requirements due to the small X1, thereby reducing the difficulty of manufacturing the back contact battery; it can also prevent the small X1 resulting in a small effective electrical contact area corresponding to the conductive semiconductor structure, which leads to poor effect in reducing the risk of hot spots of the back contact battery by setting the conductive semiconductor structure. Furthermore, this can prevent the difficulty in manufacturing the electrode structure and / or the high contact resistance between the electrode structure and the strip doped regions due to a large X1, which results in a smaller width of the portion of the strip doped region reserved for ohmic contact with the electrode structure along its width direction. This can help improve the yield of back-contact cells and the contact performance between the electrode structure and the strip doped regions. The beneficial effects of W within the above range can be found in the previous text and will not be elaborated on here.

[0269] Exemplarily, when the configuration corresponding to the second conductive semiconductor portion is an insulating configuration, one sixteen thousandth of W ≤ Z ≤ one twenty-fifth of W. For example: in this case, the side effective electrical contact height Z can be equal to one sixteen thousandth of W, one fifteen thousandth of W, one twelve thousandth of W, one ten thousandth of W, or one twenty-fifth of W, etc. In this case, regardless of whether the conductive semiconductor structure is disposed on at least one of the first doping region and the second doping region, the effective electrical contact area between the conductive semiconductor structure and the first doping region and the second doping region, respectively, is only the effective electrical contact area between the side surfaces of the first doping region and the second doping region and the conductive semiconductor structure, respectively, that is, the product of W and Z. In the above case, by adjusting the numerical values ​​of W and Z, the reverse breakdown voltage of the back contact battery and the leakage current under normal operation can be adjusted, which is beneficial to improving the applicability of the back contact battery provided in the embodiment of the present application in different application scenarios. In other words, if W and Z satisfy the above-mentioned size relationship range, it can prevent the back contact battery from having a large leakage current under normal working conditions due to an unreasonable setting of the proportional relationship between W and Z, which results in a large effective electrical contact area, thereby ensuring that the back contact battery has higher working performance; it can also prevent the back contact battery from having a small reduction in the reaction breakdown voltage of the back contact battery due to an unreasonable setting of the proportional relationship between W and Z, thereby ensuring that the back contact battery has a lower risk of hot spots.

[0270] Exemplarily, the side effective electrical contact height Z can satisfy: 0.00005mm≤Z≤0.002mm. For example: the side effective electrical contact height Z can be 0.00005mm, 0.0001mm, 0.0002mm, 0.0003mm, 0.0004mm, 0.0005mm, 0.001mm or 0.002mm, etc. In this case, in the actual application process, for the sake of carrier shunting capability and consumables usage, the first doping region and the second doping region included in the back contact battery usually have a reasonable thickness (or depth) range. In addition, the size of the side effective electrical contact height Z will affect the effective electrical contact area of ​​the conductive semiconductor structure with the first doping region and the second doping region, respectively, and thus affect the leakage current size of the first doping region and the second doping region through the single conductive semiconductor structure. In this case, keeping the effective electrical contact height Z within the above range prevents the conductive semiconductor structure from having an excessively large or small effective electrical contact area, which could lead to a poor balance between the risk of hot spots and the operating efficiency of the back-contact cell under normal operation. Furthermore, a larger effective electrical contact height Z could prevent the conductive semiconductor structure from requiring more material than necessary, thus helping to control the manufacturing cost of the back-contact cell.

[0271] For example, when the second conductive semiconductor portion is disposed on the corresponding strip-shaped doped region along the extension direction of the strip-shaped doped region, as shown in FIG10 , when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the first doped region, 0.1D2≤X2≤1.2D2; and / or, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the second doped region, 0.1D3≤X2≤1.2D3. For example, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the first doped region, X2 may be equal to 0.1D2, 0.3D2, 0.6D2, 0.9D2, D2, or 1.2D2, etc. For example, when the second conductive semiconductor portion 18 is disposed on the strip-shaped doped region 14 included in the second doped region, X2 may be equal to 0.1D3, 0.3D3, 0.6D3, 0.9D3, D3, or 1.2D3, etc. In this case, the conductive semiconductor structure 13 is disposed on the strip-shaped doped region 14 included in the first doped region along the extension direction of the strip-shaped doped region 14. As previously described, the carriers collected by the first doped region need to be conducted away through the electrode structure in ohmic contact with the first doped region. Furthermore, the extension length of the electrode structure on the strip-shaped doped region 14 included in the first doped region affects the contact resistance between the electrode structure and the first doped region, as well as the ability of the carriers collected by each portion of the strip-shaped doped region 14 included in the first doped region to be conducted away through the electrode structure in a timely manner. Therefore, when 0.1D2≤X2≤1.2D2, the smaller width X2 of the second conductive semiconductor portion 18 can be avoided, which can prevent the strict etching accuracy required to form the conductive semiconductor structure 13 with a smaller width, thereby reducing the manufacturing difficulty of the back-contact battery. Furthermore, when the corresponding configuration of the second conductive semiconductor portion 18 is an electrical configuration, the smaller width X2 can also prevent the conductive semiconductor structure from having a smaller effective electrical contact area, which can lead to poor hot spot reduction effectiveness in the back-contact battery. Furthermore, this prevents the long distance X2 between the end of the electrode structure and the edge of the strip-shaped doped region 14 along its extension direction, which can lead to the inability to promptly remove carriers collected along the edge of the strip-shaped doped region 14. This ensures good performance of the back-contact battery. The beneficial effects of 0.1D3≤X2≤1.2D3 can be referenced in the analysis of the beneficial effects of 0.1D2≤X2≤1.2D2, and will not be further elaborated here.

[0272] For example, as shown in FIG10 , along the extension direction of the strip-shaped doped region 14 , the width X3 of the second conductive semiconductor portion 18 can satisfy the following: 0.1W1≤X3≤0.3W1. For example, X3 can be equal to 0.1W1, 0.12W1, 0.14W1, 0.16W1, 0.18W1, 0.2W1, 0.24W1, 0.28W1, or 0.3W1, etc. In this case, in actual application, the electrode structure will also be formed above the connection region 15, and may even make ohmic contact with the connection region 15. Based on this, the portion of the electrode structure located above the connection region 15 needs to occupy a certain width of the connection region 15. In this case, when 0.1W1≤X3≤0.3W1, the second conductive semiconductor portion 18 can be prevented from having a smaller width X3, which would result in strict etching accuracy requirements for forming the conductive semiconductor structure 13 with a smaller width, thereby reducing the etching difficulty. Furthermore, when the second conductive semiconductor portion 18 is configured electrically, the smaller width X3 would result in a smaller effective electrical contact area for the conductive semiconductor structure, thereby preventing poor hot spot reduction effects achieved by configuring the conductive semiconductor structure in the back-contact cell. Furthermore, the larger X3 can be prevented from making it difficult to form the electrode structure in the smaller width region of the connection region 15 exposed outside the second conductive semiconductor portion 18. This helps reduce the manufacturing difficulty of the electrode structure and prevents the smaller width of the electrode structure formed on the connection region 15 from resulting in a larger transmission resistance, thereby ensuring that the electrode structure has good transmission performance.

[0273] As for the thickness H of the conductive semiconductor structure, as mentioned above, the value of H may affect the size of the side effective electrical contact height Z. Therefore, it can be determined based on the specific formation process of the conductive semiconductor structure and the effective electrical contact area between the conductive semiconductor structure and the first doping region and the second doping region in the actual application scenario, and is not specifically limited here. It can be understood that, as shown in Figure 6, when the conductive semiconductor structure 13 is integrally continuous with the second doping region 12, the thickness of the conductive semiconductor structure 13 is equal to the thickness of the second doping region 12. As shown in Figure 5, when the conductive semiconductor structure 13 is integrally continuous with the first doping region 11, the thickness of the conductive semiconductor structure 13 is equal to the thickness of the first doping region 11.

[0274] In terms of quantity, the back-contact cell provided in the embodiments of the present application may include only one conductive semiconductor structure. Alternatively, as shown in Figures 50 and 51 , the back-contact cell may include multiple conductive semiconductor structures 13. Furthermore, adjacent conductive semiconductor structures 13 are spaced apart. In this case, large local leakage current between the first doped region and the second doped region caused by contact between adjacent different conductive semiconductor structures 13 can be prevented.

[0275] In the case where the back-contact cell includes multiple conductive semiconductor structures, the orthographic projection areas of different conductive semiconductor structures on the backlight side may be equal or unequal. As shown in Figures 50 and 51, when the orthographic projection areas of different conductive semiconductor structures 13 on the backlight side are equal, it is beneficial to make the corresponding leakage currents after the first doping region and the second doping region are electrically connected to the different conductive semiconductor structures 13 respectively equal, thereby making the reverse breakdown voltages of the built-in diodes set in different regions between the first doping region and the second doping region equal, thereby preventing the problem of battery burning due to local heat concentration when the back-contact cell is blocked, and further reducing the hot spot risk of the photovoltaic module including the back-contact cell provided by the embodiment of the present application.

[0276] In addition, it can be understood that when the width W of the conductive semiconductor structure satisfies 0.5D1≤W≤6D1, the number of conductive semiconductor structures included in the back-contact cell affects the sum of the positive projection areas of all conductive semiconductor structures on the backlight side, thereby affecting the working efficiency of the photovoltaic module including the back-contact cell in the normal voltage region, and affecting the magnitude of the reverse breakdown voltage of the back-contact cell. Therefore, based on the requirements of the above two situations in the actual application scenario, the number of conductive semiconductor structures included in the back-contact cell and the area ratio of the sum of the positive projection areas of all conductive semiconductor structures on the backlight side can be determined.

[0277] Exemplarily, the sum of the orthographic projection areas of all conductive semiconductor structures located between the first doping region and the second doping region on the backlight side is S3, the area of ​​the backlight side is S2, and the ratio of S3 to S2 can be greater than or equal to 0.002% and less than or equal to 20%. For example, the ratio of S3 to S2 can be 0.002%, 0.01%, 0.1%, 1%, 5%, 10%, 15%, or 20%. In this case, the ratio of S3 to S2 is within the above range, which can prevent the orthographic projection area of ​​a single conductive semiconductor structure on the backlight side from being small and / or the number of conductive semiconductor structures provided on the backlight side from being small due to the small ratio of S3 to S2, thereby ensuring that the reverse breakdown voltage of the back-contact battery is reduced to a range that meets operating requirements due to the provision of a reasonable number and a reasonable orthographic projection area of ​​conductive semiconductor structures. In addition, it can also prevent the photovoltaic module including the back-contact cell from having poor working efficiency in the forward voltage region due to the large ratio of S3 to S2, which results in a large positive projection area of ​​a single conductive semiconductor structure on the backlight side and / or a large number of conductive semiconductor structures arranged on the backlight side.

[0278] As for the number of conductive semiconductor structures provided on the backlight side, it can be understood that, as shown in Figures 52 to 55, when the size of each conductive semiconductor structure 13 is fixed, the more conductive semiconductor structures 13 are formed on the backlight side, the larger the sum of the orthographic projection areas of the conductive semiconductor structures 13 on the backlight side. Secondly, within a certain range, the more conductive semiconductor structures 13 there are, the lower the reverse breakdown voltage of the back-contact battery gradually becomes. However, beyond the corresponding range, even if more conductive semiconductor structures 13 are provided on the backlight side, the change in the reverse breakdown voltage of the back-contact battery is small or even ceases to change. When the number of conductive semiconductor structures 13 increases to a larger range, the working efficiency of the back-contact battery decreases as the leakage current increases. Based on this, the number of conductive semiconductor structures can be determined based on the classification of the back-contact battery, the size of the conductive semiconductor structure 13, and the requirements for the reverse breakdown voltage and working efficiency of the back-contact battery in actual application scenarios.

[0279] For example, when the back contact cell is a whole-piece back contact cell, the number of conductive semiconductor structures included in the back contact cell can be greater than or equal to 30 and less than or equal to 8000. For example, when the back contact cell is a whole-piece back contact cell, the number of conductive semiconductor structures included in the back contact cell can be 30, 300, 400, 450, 500, 800, 1000, 1500, 2000, 2500, 3000 or 8000, etc. When the above technical solution is adopted, when the back contact cell is a whole-piece back contact cell, the number of conductive semiconductor structures included in the back contact cell is set to be greater than or equal to 30 and less than or equal to 8000. This can prevent the reverse breakdown voltage of the back contact cell from being reduced too little due to the small number of conductive semiconductor structures, thereby ensuring that the hot spot risk of the back contact cell can be reduced to within the working requirements. In addition, it can also prevent the working efficiency of the photovoltaic module including the back contact cell provided by the embodiment of the present application from being poor due to the large number of conductive semiconductor structures.

[0280] For example, when the back-contact cell is a 1 / N split-sheet back-contact cell, the number of conductive semiconductor structures included in the back-contact cell may be greater than or equal to 30 / N and less than or equal to 8000 / N, where N is a positive integer greater than or equal to 2. For example, when the back-contact cell is a 1 / 2 split-sheet back-contact cell, the number of conductive semiconductor structures included in the back-contact cell may be 15, 120, 150, 175, 200, 300, 500, 800, 1000, 1200, 1500, or 1650. The beneficial effects in this case can be analyzed with reference to the beneficial effects of the case where the back-contact cell is a whole-sheet back-contact cell, where the number of conductive semiconductor structures included in the back-contact cell is greater than or equal to 30 and less than or equal to 8000, as described above, and will not be repeated here.

[0281] Specifically, in actual application, the number of the conductive semiconductor structures included in the back contact cell can be determined according to the ratio between the width W of the conductive semiconductor structure and D1.

[0282] For example, when the ratio of W to D1 is greater than or equal to 0.5 and less than or equal to 2, if the back-contact cell is a whole-sheet back-contact cell, the number of conductive semiconductor structures included in the back-contact cell may be greater than or equal to 30 and less than or equal to 2000. If the back-contact cell is a 1 / N slice back-contact cell, the number of conductive semiconductor structures included in the back-contact cell may be greater than or equal to 30 / N and less than or equal to 2000 / N.

[0283] For example, when the ratio of W to D1 is greater than 2 and less than or equal to 3, if the back-contact cell is a whole-piece back-contact cell, the number of conductive semiconductor structures included in the back-contact cell may be greater than or equal to 350 and less than or equal to 1530. If the back-contact cell is a 1 / N sliced ​​back-contact cell, the number of conductive semiconductor structures included in the back-contact cell may be greater than or equal to 350 / N and less than or equal to 1530 / N.

[0284] In addition, as mentioned above, when the conductive semiconductor structure is also arranged on the portion of the first doped region and the second doped region that is in electrical contact with itself, the different arrangements of the conductive semiconductor structure may also cause the size of the effective electrical contact area corresponding to the conductive semiconductor structure to change, thereby affecting the reverse breakdown voltage of the back-contact battery and the leakage current under normal operation. Based on this, the number of conductive semiconductor structures arranged on the backlight side under different arrangements can be determined based on the requirements for the reverse breakdown voltage and leakage current of the back-contact battery under normal operation in actual application scenarios, and no specific limitation is made here.

[0285] For example, in the case where the conductive semiconductor structure is electrically disposed on a portion of the first doping region and / or the second doping region that is in electrical contact with the structure itself, when the back-contact cell is a whole-piece back-contact cell, the number of the conductive semiconductor structures disposed on the backlight side may be greater than or equal to 30 and less than or equal to 4000; when the back-contact cell is a one-N split-piece back-contact cell, the number of the conductive semiconductor structures disposed on the backlight side may be greater than or equal to 30 / N and less than or equal to 4000 / N, where N is a positive integer greater than or equal to 2. For example, in the case where the conductive semiconductor structure is electrically disposed on a portion of the first doping region and / or the second doping region that is in electrical contact with the structure itself, when the back-contact cell is a whole-piece back-contact cell, the number of the conductive semiconductor structures disposed on the backlight side may be 30, 100, 500, 1000, 1500, 2000, 2500, 3000, 3500, or 4000, etc. For example, when the conductive semiconductor structure is electrically disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, and when the back-contact cell is a half-slice back-contact cell, the number of conductive semiconductor structures disposed on the back-light side can be 15, 100, 300, 500, 1000, 1500, or 2000, etc. In this case, when other factors are the same, compared with when the conductive semiconductor structure is insulated and disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, the effective electrical contact area corresponding to the conductive semiconductor structure is larger when the conductive semiconductor structure is electrically disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself. Based on this, when the conductive semiconductor structure is electrically disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, the number of conductive semiconductor structures disposed on the back-light side is within the above range, which can prevent a smaller reduction in the reverse breakdown voltage of the back-contact cell due to a smaller number of conductive semiconductor structures, thereby ensuring that the hot spot risk of the back-contact cell can be reduced to within operating requirements. In addition, it can also prevent the poor working efficiency of the photovoltaic module including the back contact cell provided by the embodiment of the present application due to the provision of more conductive semiconductor structures.

[0286] For example, in the case where the conductive semiconductor structure is insulated and disposed on the portion in electrical contact with the first doping region and / or the second doping region, when the back-contact cell is a whole-piece back-contact cell, the number of the conductive semiconductor structures disposed on the backlight side may be greater than or equal to 5000 and less than or equal to 8000; when the back-contact cell is a one-N slice back-contact cell, the number of the conductive semiconductor structures disposed on the backlight side may be greater than or equal to 5000 / N and less than or equal to 8000 / N, where N is a positive integer greater than or equal to 2. For example, in the case where the conductive semiconductor structure is insulated and disposed on the portion in electrical contact with the first doping region and / or the second doping region, when the back-contact cell is a whole-piece back-contact cell, the number of the conductive semiconductor structures disposed on the backlight side may be 5000, 5500, 6000, 6500, 7000, 7500 or 8000, etc. For example, when the conductive semiconductor structure is insulated and disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, when the back contact cell is a half-slice back contact cell, the number of conductive semiconductor structures disposed on the backlight side can be 2500, 2800, 3000, 3200, 3500, 3800, or 4000, etc. In this case, when other factors are the same, compared with the conductive semiconductor structure being electrically disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, the effective electrical contact area corresponding to the conductive semiconductor structure is smaller when the conductive semiconductor structure is insulated and disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself. Based on this, when the conductive semiconductor structure is insulated and disposed on the portion of the first doping region and / or the second doping region that is in electrical contact with itself, the reverse breakdown voltage of the back contact cell can be reduced to a target range by reasonably disposing a larger number of conductive semiconductor structures on the backlight side. Based on this, the number of conductive semiconductor structures provided on the backlight side is within the above-mentioned range. This can prevent a small reduction in the reverse breakdown voltage of the back-contact cell due to a small number of conductive semiconductor structures, thereby ensuring that the risk of hot spots on the back-contact cell can be reduced to within operating requirements. Furthermore, it can also prevent the poor operating efficiency of the photovoltaic module including the back-contact cell provided in the embodiments of the present application due to the provision of a large number of conductive semiconductor structures.

[0287] The following describes four specific embodiments and one comparative example of the back contact cell provided by the present application in conjunction with FIG56 and Table 1. As shown in FIG11 , in the back contact cell corresponding to Example 1, each strip-shaped doped region 14 is provided with a second conductive semiconductor portion 18 on both sides along the width direction, and the number of second conductive semiconductor portions 18 provided is 6732. The sum of the effective electrical contact areas corresponding to all conductive semiconductor structures 13 on the backlight side is 242.4 mm. 2 .

[0288] In the back contact cell corresponding to Example 2, the conductive semiconductor structures are arranged on both sides of the electrical connection point (the electrical connection point refers to the point where the electrode structure is connected to the series interconnection member such as the soldering ribbon) along the extension direction of the strip-shaped doped region, and the number of second conductive semiconductor parts is 672. The sum of the effective electrical contact areas corresponding to all the conductive semiconductor structures on the backlight side is 31.2 mm. 2 .

[0289] Example 3 is based on Example 1. Along the width direction of the strip doping region, every 7 strip doping regions are used as the next strip doping region. Second conductive semiconductor portions are provided on both sides along the width direction, and the number of second conductive semiconductor portions provided is 884. The sum of the effective electrical contact areas corresponding to all conductive semiconductor structures on the backlight side is 31.8 mm. 2 .

[0290] Example 4 is based on Example 3, and the area corresponding to the second conductive semiconductor portion is reduced. In this case, the number of second conductive semiconductor portions is still 884, but the total effective electrical contact area corresponding to all conductive semiconductor structures on the backlight side is 7.96 mm. 2 .

[0291] The comparative example is as shown in FIG1 , in which the first doping region and the second doping region are completely isolated from each other.

[0292] Table 1 Comparison of parameters of back contact cells corresponding to Examples 1 to 4

[0293] As can be seen from the data shown in Figure 56 and Table 1, due to the provision of a conductive semiconductor structure, the maximum reverse voltage of the back-contact cells corresponding to Examples 1 to 4 is less than the maximum reverse voltage corresponding to the comparative example. In addition, the number of conductive semiconductor structures in Example 3 is less than the number of conductive semiconductor structures provided in Example 1, so the maximum reverse voltage and hot spot temperature of the back-contact cell corresponding to Example 3 are greater than the maximum reverse voltage and hot spot temperature of the back-contact cell corresponding to Example 1. Furthermore, the provision area of ​​the conductive semiconductor structure in Example 4 is less than the provision area of ​​the conductive semiconductor structure in Example 3, so the maximum reverse voltage of the back-contact cell corresponding to Example 4 is greater than the maximum reverse voltage of the back-contact cell corresponding to Example 3.

[0294] As for the distribution of different conductive semiconductor structures on the backlight side, the position of each conductive semiconductor structure on the backlight side can be randomly set. Preferably, as shown in Figures 50 and 51, the different conductive semiconductor structures 13 are evenly distributed on the backlight side. In this case, it is beneficial to make the reverse breakdown voltage of the built-in diode formed between the different areas of the first doping region and the corresponding areas of the second doping region after the conductive semiconductor structure 13 is set equal, thereby preventing the problem of battery burning due to local heat concentration when the back contact battery is blocked, and further reducing the hot spot risk of the photovoltaic module including the back contact battery provided by the embodiment of the present application.

[0295] In actual applications, Figures 57 to 62 illustrate several optional distribution methods for the conductive semiconductor structures 13 within different unit regions on the backlight side. The different conductive semiconductor structures 13 can be evenly distributed on the backlight side using at least the methods shown in Figures 25 to 30. The embodiments of this application do not specifically limit the distribution method of the different conductive semiconductor structures 13 on the backlight side.

[0296] For example, as shown in Figures 50 and 51, different conductive semiconductor structures 13 can be distributed in a matrix on the backlight side. Adjacent rows of the conductive semiconductor structures 13 arranged in the matrix are aligned or staggered. Specifically, in the conductive semiconductor structures 13 arranged in the matrix, one conductive semiconductor structure 13 in each row can be aligned or staggered with the corresponding conductive semiconductor structure 13 in the adjacent row. Alternatively, in the conductive semiconductor structures 13 arranged in the matrix, at least two oppositely disposed conductive semiconductor structures 13 in each row can be aligned or staggered with the corresponding at least two oppositely disposed conductive semiconductor structures 13 in the adjacent row.

[0297] In this case, the distribution of different conductive semiconductor structures 13 on the backlight side is relatively regular, and the adjacent rows of the matrix-shaped conductive semiconductor structures 13 also have two distribution modes: alignment and staggered arrangement. This is conducive to reducing the difficulty of manufacturing the conductive semiconductor structure 13, and is also conducive to making the conductive semiconductor structure 13 evenly distributed on the backlight side, further preventing the problem of battery burning due to local heat concentration when the back contact battery is blocked.

[0298] In the case where adjacent rows of conductive semiconductor structures are staggered in a matrix arrangement, the staggered distance L between two adjacent rows of conductive semiconductor structures can be any value greater than 0 and less than the geometric center distance L1 between two adjacent conductive semiconductor structures in the same row.

[0299] For example, as shown in FIG51 , when adjacent rows of conductive semiconductor structures 13 are staggered in a matrix pattern, the staggered distance L between two adjacent rows of conductive semiconductor structures 13 is equal to half the distance L1 between the geometric centers of two adjacent conductive semiconductor structures 13 in the same row. This facilitates ensuring that the distribution density of the conductive semiconductor structures 13 is substantially uniform between different regions of the first doping region 11 and corresponding regions of the second doping region 12. This prevents the problem of back-contact cells being blocked by localized heat concentration, which could lead to battery burnout, due to a long region physically separated by an insulating trench or insulating material between the first doping region 11 and the second doping region 12.

[0300] In actual applications, as shown in FIG63 , a back-contact cell may further include a surface passivation layer 19 and an electrode structure 20. The surface passivation layer 19 is formed at least on the first doped region 11, the second doped region 12, and the conductive semiconductor structure 13. The electrode structure 20 penetrates the surface passivation layer 19 and makes ohmic contact with the first doped region 11 and the second doped region 12, respectively. The portion of the electrode structure 20 electrically coupled to the first doped region 11 and the portion electrically coupled to the second doped region 12 are insulated from each other.

[0301] Specifically, the embodiment of the present application does not impose any specific restrictions on the materials and thicknesses of the surface passivation layer and the electrode structure, as long as they can be applied to the back-contact battery provided in the embodiment of the present application. In addition, as shown in FIG63 , the conductive semiconductor structure 13 may be arranged on the portion of the first doping region 11 and / or the second doping region 12 that is in electrical contact with itself. At this time, the conductive semiconductor structure 13 will also occupy a certain range on the portion of the first doping region 11 and / or the second doping region 12 that is in electrical contact with itself, which may affect the manufacture of the electrode structure 20. Based on this, it can be determined according to the requirements for the manufacturing accuracy of the electrode structure 20, the contact performance of the electrode structure 20, and the effective electrical contact area corresponding to the conductive semiconductor structure 13 in the actual application scenario, and no specific restrictions are imposed here.

[0302] For example, along a direction parallel to the backlight surface, the minimum spacing D4 between the electrode structure and the portion of the surface passivation layer covering the conductive semiconductor structure can be greater than or equal to 30 μm and less than or equal to 250 μm. For example, along a direction parallel to the backlight surface, the minimum spacing D4 between the electrode structure and the portion of the surface passivation layer covering the conductive semiconductor structure can be 30 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 220 μm, or 250 μm, etc. In this case, in actual applications, the equipment for manufacturing the electrode structure often has certain processing errors, resulting in a certain deviation between the target formation range of the electrode structure and the actual formation range. Based on this, the minimum spacing D4 between the electrode structure and the portion of the surface passivation layer covering the conductive semiconductor structure is within the above range. This can prevent the electrode structure from being at least partially formed above the conductive semiconductor structure due to a small minimum spacing D4, thereby preventing the collected carriers of the first doped region and / or the second doped region from being unable to be promptly removed. In addition, it can also prevent the conductive semiconductor structure from being set on the first doping region and the second doping region from having a smaller width due to the larger minimum spacing D4, ensuring that each conductive semiconductor structure has a relatively large effective electrical contact area, which is beneficial to reducing the reverse breakdown voltage of the back contact battery.

[0303] In a second aspect, an embodiment of the present application provides a photovoltaic assembly, which includes the solar cell provided by the first aspect and various implementations thereof.

[0304] The beneficial effects of the second aspect and its various implementations in the embodiments of the present application can be analyzed with reference to the beneficial effects of the first aspect and its various implementations, and will not be repeated here.

[0305] In a third aspect, an embodiment of the present application further provides a method for manufacturing a back-contact battery, the method comprising the following steps:

[0306] First, a semiconductor substrate is provided.

[0307] Next, a first doping region and a second doping region are formed on the backlight side of the semiconductor substrate; the first doping region and the second doping region are alternately distributed on the backlight side of the semiconductor substrate, and the conductivity types of the first doping region and the second doping region are opposite; along the arrangement direction of the first doping region and the second doping region, the area between the first doping region and the second doping region is the spacing area.

[0308] Next, a conductive semiconductor structure is formed on the backlight side of the semiconductor substrate; the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion that are electrically contacted; the first conductive semiconductor portion is located in the spacing area, and the conductivity type of the first conductive semiconductor portion is opposite to the conductivity type of one of the first doping region and the second doping region; only a portion of the first doping region and only a portion of the second doping region are respectively electrically connected to at least the first conductive semiconductor portion; the second conductive semiconductor portion is arranged above a portion of the first doping region and / or the second doping region that is away from the semiconductor substrate.

[0309] Specifically, the backlight surface of the semiconductor substrate may have first regions and second regions that are alternately distributed, and a spacing region between the first region and the second region adjacent thereto.

[0310] Among them, the boundaries between the first region, the second region and the spacing region on the backlight side of the semiconductor substrate are virtual boundaries. A first doped region will be formed in the first region later. Therefore, the range of the first region on the backlight side can be determined based on the formation range of the first doped region in the actual application scenario. A second doped region will be formed in the second region later. Therefore, the range of the second region on the backlight side can be determined based on the formation range of the second doped region in the actual application scenario. As for the spacing region, after the ranges of the first region and the second region are determined, the range of the spacing region between the first region and the second region adjacent to it can be determined. Among them, the materials and dimensions of the first doped region, the second doped region and the conductive semiconductor structure can be referred to the previous text and will not be repeated here.

[0311] In the actual manufacturing process, the manufacturing process of forming the first doped region, the second doped region and the conductive semiconductor structure on the backlight side of the semiconductor substrate is divided into the following two descriptions:

[0312] The first method is to form a first doped region in the first area.

[0313] In the actual manufacturing process, a process such as chemical vapor deposition can be used to form a complete intrinsic semiconductor layer on the backlight side. The intrinsic semiconductor layer is then doped using diffusion or ion implantation to obtain a doped semiconductor material. Subsequently, the doped semiconductor material is selectively etched using a laser etching process, or dry or wet etching under the action of a corresponding mask, to remove the portion of the doped semiconductor material corresponding to the second region and the spacer region, thereby obtaining the first doped region.

[0314] In the case where the intrinsic semiconductor layer is doped using a diffusion process and the intrinsic semiconductor layer is silicon, a conductive doped silicon glass layer or a doped silicon glass layer is also formed on the side of the first doped region facing away from the semiconductor substrate. In addition, when the manufactured back-contact battery also includes a passivation layer located between the first doped region and the first area, a process such as chemical vapor deposition can be used before forming the above-mentioned intrinsic semiconductor layer to form a passivation material layer arranged in an entire layer on the backlight side. Then, while selectively etching the doped semiconductor material, the above-mentioned passivation material layer is selectively etched to obtain a passivation layer located between the first doped region and the semiconductor substrate. Of course, before forming the intrinsic semiconductor layer, deposition and etching processes can also be used to form a passivation layer only in the first area.

[0315] Next, as shown in FIG11 , a doped semiconductor material layer is formed in the first doping region 11 , the spacing region, and the second region.

[0316] In the actual manufacturing process, chemical vapor deposition and other processes can be used to form an intrinsic semiconductor layer with a whole layer in the first doping area, the spacing area and the second area, and the intrinsic semiconductor layer can be doped by diffusion or ion implantation to obtain a doped semiconductor material layer.

[0317] Wherein, when the intrinsic semiconductor layer is doped by a diffusion process and the intrinsic semiconductor layer is silicon, a doped silicon glass layer or a conductive doped silicon glass layer is further formed on the side of the doped semiconductor material layer facing away from the semiconductor substrate.

[0318] Next, as shown in Figure 11, the doped semiconductor material layer is selectively etched to remove the portion of the doped semiconductor material layer corresponding to the first doped region 11 and the portion of the spacing region; after selective etching, the doped semiconductor material layer forms a second doped region 12 and at least one conductive semiconductor structure 13; the second doped region 12 is located in the second area; the second doped region 12 and the first doped region 11 have opposite conductivity types, and the second doped region 12 and the conductive semiconductor structure 13 have the same conductivity type; only a portion of the first doped region 11 and only a portion of the second doped region 12 are electrically in contact with the at least one conductive semiconductor structure 13 respectively; the conductive semiconductor structure 13 includes a first conductive semiconductor portion 17 and a second conductive semiconductor portion 18 that are continuous as one; the first conductive semiconductor portion 17 is located between the first doped region 11 and the second doped region 12, and the second conductive semiconductor portion 18 is arranged above the portion of the first doped region 11 that is away from the semiconductor substrate.

[0319] In actual applications, a laser etching process, or dry etching or wet etching using a mask using a corresponding mask plate, is used to selectively etch the doped semiconductor material layer to remove portions of the doped semiconductor material layer corresponding to the first region and the spacer region, thereby obtaining a second doped region and a conductive semiconductor structure. The schematic diagram on the left of FIG11 is a schematic diagram of the selectively etched region (corresponding to the region where the grid is located in the figure) after the doped semiconductor material layer is formed. The schematic diagram on the right of FIG11 is a schematic diagram after the second doped region and the conductive semiconductor structure are formed by selective etching.

[0320] It can be understood that under this manufacturing method, if the material of the first doped region is silicon and the first doped region is diffused using a diffusion process, then after the conductive semiconductor structure is formed, there is a doped silicon glass layer or a conductive doped silicon glass layer between the second conductive semiconductor portion included in the conductive semiconductor structure and the first doped region located directly below it. Alternatively, before forming the intrinsic semiconductor layer used to manufacture the second doped region and the conductive semiconductor structure, the doped silicon glass layer or the conductive doped silicon glass layer located on the first doped region can be removed, and the second conductive semiconductor portion included in the conductive semiconductor structure can be directly in contact with the first doped region located directly below it. Alternatively, before forming the intrinsic semiconductor layer used to manufacture the second doped region and the conductive semiconductor structure, the doped silicon glass layer or the conductive doped silicon glass layer located on the first doped region can be removed, and the corresponding film layer (such as a transparent conductive layer, etc.) required in practice can be formed.

[0321] In addition, when the manufactured back-contact cell also includes a passivation layer located between the second doped region and the second region, after forming the first doped region and before forming the intrinsic semiconductor layer used to manufacture the doped semiconductor material layer, a process such as chemical vapor deposition can be used to form a passivation material layer disposed entirely in the first doped region, the spacer region, and the second region. Then, while selectively etching the doped semiconductor material layer, the passivation material layer is selectively etched to obtain a passivation layer located between the second doped region and the semiconductor substrate, and between the conductive semiconductor structure and the semiconductor substrate. Of course, it is also possible to form a passivation layer only in the second region using processes such as deposition and etching before forming the intrinsic semiconductor layer.

[0322] The second method: forming a second doped region in the first region. Next, forming a doped semiconductor material layer in its entirety in the second doped region, the spacing region, and the second region. Next, selectively etching the doped semiconductor material layer to remove the portion of the doped semiconductor material layer located in part of the second doped region and part of the spacing region; after selective etching, the doped semiconductor material layer forms a first doped region and at least one conductive semiconductor structure; the first doped region is located in the second region; the first doped region and the second doped region have opposite conductivity types, and the first doped region and the conductive semiconductor structure have the same conductivity type; only a portion of the first doped region and only a portion of the second doped region are electrically in contact with at least one conductive semiconductor structure, respectively; the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion that are continuous as one; the first conductive semiconductor portion is located between the first doped region and the second doped region, and the second conductive semiconductor portion is disposed above a portion of the second doped region that faces away from the semiconductor substrate.

[0323] The specific manufacturing process of the second manufacturing method can refer to the specific manufacturing process of the first manufacturing method described above. The difference between the two is that in the first method, the conductive semiconductor structure is continuously integrated with the second doped region, while in the second method, the conductive semiconductor structure is continuously integrated with the first doped region.

[0324] The beneficial effects of the third aspect and its various implementation methods in the embodiments of the present application can be analyzed with reference to the beneficial effects of the corresponding implementation methods in the first aspect, and will not be repeated here.

[0325] Furthermore, in actual applications, the conductive semiconductor structure can also be formed separately from the first doped region and the second doped region on the semiconductor substrate. Based on this, in actual manufacturing, deposition and selective etching processes can be used to form the first doped region in the first region of the backlit surface of the semiconductor substrate, and the second doped region in the second region of the backlit surface of the semiconductor substrate. In this case, the first doped region and the second doped region are alternately spaced. Subsequently, deposition and etching processes are used to form the conductive semiconductor structure in at least some of the spaced regions, depending on the requirements for the formation range of the conductive semiconductor structure in the actual application scenario.

[0326] While the above description does not provide detailed technical details regarding patterning and etching of each layer, those skilled in the art will appreciate that various technical means can be employed to form layers, regions, and the like in desired shapes. Furthermore, those skilled in the art may devise methods that differ from those described above to form the same structure. Furthermore, while each embodiment has been described separately, this does not mean that the measures in each embodiment cannot be advantageously combined.

[0327] The above describes the embodiments of the present disclosure. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which are intended to fall within the scope of the present disclosure.

Claims

1. A back contact battery, characterized in that: include: a semiconductor substrate, a first doped region, a second doped region, and at least one conductive semiconductor structure; The first doping regions and the second doping regions are alternately distributed on the backlight side of the semiconductor substrate, and the conductivity types of the first doping regions and the second doping regions are opposite; along the arrangement direction of the first doping regions and the second doping regions, the region between the first doping regions and the second doping regions is the spacing region; wherein, The conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion in electrical contact; the first conductive semiconductor portion is located in the spacing region, and the conductivity type of the first conductive semiconductor portion is opposite to the conductivity type of one of the first doping region and the second doping region; only a portion of the first doping region and only a portion of the second doping region are respectively electrically connected to at least the first conductive semiconductor portion; the second conductive semiconductor portion is arranged above a portion of the first doping region and / or the second doping region that is away from the semiconductor substrate.

2. The back contact battery according to claim 1, characterized in that The contact surface between the conductive semiconductor structure and one of the first doped region and the second doped region having a conductivity type opposite to that of the conductive semiconductor structure includes a side effective electrical contact surface; the height of the side effective electrical contact surface is a side effective electrical contact height Z; and the direction of the extension direction of the side effective electrical contact surface away from the backlight surface of the semiconductor substrate is parallel to the thickness direction of the semiconductor substrate.

3. The back contact battery according to claim 1, characterized in that The first doping region and the second doping region each include a plurality of strip-shaped doping regions; the strip-shaped doping regions included in the first doping region and the strip-shaped doping regions included in the second doping region are parallel and spaced apart; The conductive semiconductor structure includes a first conductive semiconductor portion located between two adjacent strip-shaped doped regions belonging to the first doped region and the second doped region respectively, and the width direction of the conductive semiconductor structure is parallel to the extension direction of the strip-shaped doped regions.

4. The back contact battery according to claim 1, characterized in that In the case where the first doping region and the second doping region are alternately distributed in an interdigitated manner, each of the first doping region and the second doping region includes a plurality of strip-shaped doping regions and at least one connecting region; the strip-shaped doping regions included in the first doping region and the strip-shaped doping regions included in the second doping region are parallel and alternately distributed; each connecting region is electrically connected to a corresponding strip-shaped doping region of the same conductivity type as itself; and an extension direction of the connecting region is different from an extension direction of the strip-shaped doping region; The first conductive semiconductor portion included in at least one of the conductive semiconductor structures is located between two adjacent strip-shaped doping regions belonging to the first doping region and the second doping region respectively, and the width direction of the conductive semiconductor structure is parallel to the extension direction of the strip-shaped doping regions; and / or the first conductive semiconductor portion included in at least one of the conductive semiconductor structures is located between a strip-shaped doping region included in one of the first doping region and the second doping region and an adjacent connection region included in the other, and the width direction of the conductive semiconductor structure is parallel to the distribution direction of the strip-shaped doping regions of opposite conductivity type.

5. A back contact battery, characterized in that: include: a semiconductor substrate, a first doped region, a second doped region, and at least one conductive semiconductor structure; Each of the conductive semiconductor structures is at least partially located between the first doping region and the second doping region, and only a portion of the first doping region and only a portion of the second doping region are respectively in electrical contact with the at least one conductive semiconductor structure; the first doping region and the second doping region have opposite conductivity types, and the conductive semiconductor structure has an opposite conductivity type to that of one of the first doping region and the second doping region; wherein, The first doping region and the second doping region each include a plurality of strip-shaped doping regions and at least one connection region; the strip-shaped doping regions included in the first doping region and the strip-shaped doping regions included in the second doping region are distributed in parallel and alternately on the backlight side of the semiconductor substrate; each connection region is electrically connected to the corresponding strip-shaped doping region of the same conductivity type as itself; the extension direction of the connection region is different from the extension direction of the strip-shaped doping region; at least one conductive semiconductor structure is at least partially located between a strip-shaped doping region included in one of the first doping region and the second doping region and an adjacent connection region included in the other.

6. The back contact battery according to claim 1, characterized in that The area between the first doping region and the second doping region is a spacing region; the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion that are electrically contacted; the first conductive semiconductor portion is located in the spacing region, and the second conductive semiconductor portion is arranged above a portion of the first doping region and / or the second doping region that is away from the semiconductor substrate.

7. The back contact cell according to claim 3, 4 or 6, characterized in that: In the first doping region, the width of the strip doping region corresponding to the conductive semiconductor structure is D2; in the second doping region, the width of the strip doping region corresponding to the conductive semiconductor structure is D3; In the second conductive semiconductor portion, a portion disposed above the strip-shaped doping region included in the first doping region and / or the strip-shaped doping region included in the second doping region along the width direction of the strip-shaped doping region has a width X1; When the second conductive semiconductor portion is disposed above the strip-shaped doped region included in the first doped region, 0.1D2≤X1<0.5D2; and / or, when the second conductive semiconductor portion is disposed above the strip-shaped doped region included in the second doped region, 0.1D3≤X1<0.5D3.

8. The back contact cell according to claim 3, 4 or 6, characterized in that: In the second conductive semiconductor portion, a portion disposed above the strip-shaped doping region included in the first doping region and / or the strip-shaped doping region included in the second doping region along the width direction of the strip-shaped doping region has a width X1; Along the extension direction of the spacer region, the width of the conductive semiconductor structure is W; when the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, X1≤W≤40X1, and / or, the effective electrical contact height of the side of the first doped region and the second doped region electrically connected through the conductive semiconductor structure is Z, and one thousand five hundredth of X1≤Z≤one four hundredth of X1.

9. The back contact battery according to claim 7, characterized in that Along the extension direction of the spacing region, the width of the conductive semiconductor structure is W; when the corresponding configuration of the second conductive semiconductor portion is an electrical configuration, 0.03 mm ≤ X1 ≤ 0.2 mm; and / or 0.03 mm ≤ W ≤ 8 mm.

10. The back contact battery according to claim 4 or 6, characterized in that In the first doping region, the width of the strip doping region corresponding to the conductive semiconductor structure is D2; in the second doping region, the width of the strip doping region corresponding to the conductive semiconductor structure is D3; In the second conductive semiconductor portion, a portion arranged above the strip-shaped doping region included in the first doping region and / or the strip-shaped doping region included in the second doping region along the extending direction of the strip-shaped doping region has a width of X2; When the second conductive semiconductor portion is disposed above the strip-shaped doped region included in the first doped region, 0.1D2≤X2≤1.2D2; and / or, when the second conductive semiconductor portion is disposed above the strip-shaped doped region included in the second doped region, 0.1D3≤X2≤1.2D3.

11. The back contact battery according to claim 4 or 6, characterized in that In the first doping region and the second doping region, the width of the connection region corresponding to the conductive semiconductor structure is W1; In the second conductive semiconductor portion, a portion disposed on the connection region included in the first doping region and / or the connection region included in the second doping region along the extension direction of the strip-shaped doping region has a width X3; 0.1W1≤X3≤0.3W1.

12. The back contact battery according to claim 4 or 6, characterized in that In the case where the first conductive semiconductor portion is located between a strip-shaped doped region included in one of the first doped region and the second doped region and an adjacent connecting region included in the other, the width of the connecting region belonging to one of the first doped region and the second doped region and corresponding to the conductive semiconductor structure is W1; The strip-shaped doped region, which belongs to the other of the first doped region and the second doped region and corresponds to the conductive semiconductor structure, has a length of W2; and a spacing region between the first doped region and the second doped region has a width of D1; Along the width direction of the spacer region, the length of the conductive semiconductor structure is D, and 13. The back contact cell according to claim 1 or 5, characterized in that Along the extension direction of the spacer region, the width of the conductive semiconductor structure is W; the effective electrical contact height of the side surface where the first doped region and the second doped region are electrically connected through the conductive semiconductor structure is Z; When the second conductive semiconductor portion is configured as an insulating configuration, 1 / 160,000 of W≤Z≤1 / 25 of W.

14. The back contact cell according to claim 1 or 5, characterized in that The one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure, and the conductive semiconductor structure both include a doped semiconductor layer located on the backlight surface of the semiconductor substrate; the setting height of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure, close to the backlight surface of the semiconductor substrate, is smaller than the setting height of the doped semiconductor layer included in the conductive semiconductor structure, close to the backlight surface of the semiconductor substrate, and a portion of the side surface of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is in electrical contact with the semiconductor substrate, and another portion of the side surface of the doped semiconductor layer included in the one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is in electrical contact with the conductive semiconductor structure, Along the thickness direction of the semiconductor substrate, in the backlight surface, the difference between the height of the surface of the region corresponding to the conductive semiconductor structure and the height of the surface of the region corresponding to one of the first doping region and the second doping region with a conductivity type opposite to that of the conductive semiconductor structure is greater than or equal to 0.4 μm and less than or equal to 2 μm.

15. The back contact cell according to claim 1 or 5, characterized in that The effective electrical contact height of the side surface where the first doping region and the second doping region are electrically connected through the conductive semiconductor structure is Z, and 0.00005 mm ≤ Z ≤ 0.002 mm.

16. The back contact cell according to claim 1 or 5, characterized in that The back contact battery includes a plurality of the conductive semiconductor structures; adjacent conductive semiconductor structures are arranged at intervals.

17. The back contact battery according to claim 16, characterized in that In the case where the back contact cell is a whole back contact cell, the number of the conductive semiconductor structures included in the back contact cell is greater than or equal to 30 and less than or equal to 8000; or In the case where the back contact cell is a 1 / N sliced ​​back contact cell, the number of the conductive semiconductor structures included in the back contact cell is greater than or equal to 30 / N and less than or equal to 8000 / N; N is a positive integer greater than or equal to 2.

18. The back contact battery according to claim 16, characterized in that When the second conductive semiconductor portion is electrically configured, When the back contact cell is a whole back contact cell, the number of the conductive semiconductor structures provided on the backlight side is greater than or equal to 30 and less than or equal to 4000; When the back contact cell is a 1 / N sliced ​​back contact cell, the number of the conductive semiconductor structures arranged on the backlight side is greater than or equal to 30 / N and less than or equal to 4000 / N; N is a positive integer greater than or equal to 2.

19. The back contact battery according to claim 16, characterized in that When the second conductive semiconductor portion is arranged in an insulating manner, When the back contact cell is a whole back contact cell, the number of the conductive semiconductor structures provided on the backlight side is greater than or equal to 5000 and less than or equal to 8000; When the back contact cell is a 1 / N sliced ​​back contact cell, the number of the conductive semiconductor structures arranged on the backlight side is greater than or equal to 5000 / N and less than or equal to 8000 / N; N is a positive integer greater than or equal to 2.

20. The back contact cell according to claim 16, characterized in that The orthographic projection areas of the different conductive semiconductor structures on the backlight side are equal; and / or, The different conductive semiconductor structures are evenly distributed on one side of the backlight surface.

21. The back contact cell according to claim 16, characterized in that The different conductive semiconductor structures are distributed in a matrix on one side of the backlight surface; adjacent rows of the conductive semiconductor structures distributed in the matrix are aligned or staggered.

22. The back contact cell according to claim 21, characterized in that When the conductive semiconductor structures are staggered between adjacent rows in a matrix arrangement, the staggered distance between two adjacent rows of the conductive semiconductor structures is equal to half of the distance between the geometric centers of two adjacent conductive semiconductor structures in the same row.

23. The back contact cell according to claim 1 or 6, characterized in that When the second conductive semiconductor portion is in an insulating configuration, the effective electrical contact area of ​​at least one conductive semiconductor structure is greater than or equal to 0.000025 mm 2 , and less than or equal to 0.016mm 2 ; or, When the configuration corresponding to the second conductive semiconductor portion is an electrical configuration, the effective electrical contact area corresponding to at least one of the conductive semiconductor structures is greater than or equal to 0.000175 mm 2 , and less than or equal to 1.616mm 2 .

24. The back contact cell according to claim 1, characterized in that The orthographic projection area of ​​a portion of at least one of the conductive semiconductor structures located between the first doped region and the second doped region on the backlight side is S1, the area of ​​the backlight side is S2, and the ratio of S1 to S2 is greater than or equal to 8.5×10 -7 %, and less than or equal to 6.67×10 -1 %.

25. The back contact cell according to claim 1, characterized in that The orthographic projection area of ​​the second conductive semiconductor portion on the backlight side is S4, the area of ​​the backlight side is S2, and the ratio of S4 to S2 is greater than 0 and less than or equal to 4.6×10 -3 %.

26. The back contact cell according to claim 1, characterized in that The sum of the orthographic projection areas of all portions of the conductive semiconductor structure located between the first doping region and the second doping region on the backlight side is S3, the area of ​​the backlight side is S2, and the ratio of S3 to S2 is greater than or equal to 0.002% and less than or equal to 20%.

27. The back contact cell according to claim 1 or 6, characterized in that The width of the spacing region between the first doping region and the second doping region is D1; ​​along the extension direction of the spacing region, the width of the conductive semiconductor structure is W, and 0.5D1≤W≤6D1.

28. The back contact cell according to claim 27, characterized in that 0.5D1≤W≤3D1.

29. The back contact cell according to claim 1 or 5, characterized in that The back contact battery further includes a surface passivation layer and an electrode structure; wherein, The surface passivation layer is formed at least on the first doping region, the second doping region and the conductive semiconductor structure; The electrode structure penetrates the surface passivation layer and is in ohmic contact with the first doping region and the second doping region respectively; the portion of the electrode structure electrically connected to the first doping region and the portion of the electrode structure electrically connected to the second doping region are insulated from each other; along a direction parallel to the backlight surface, the minimum spacing between the electrode structure and the portion of the surface passivation layer covering the conductive semiconductor structure is greater than or equal to 30 μm and less than or equal to 250 μm.

30. The back contact cell according to claim 1 or 5, characterized in that At least one of the first doped region, the second doped region and the conductive semiconductor structure includes a doped semiconductor layer located on the backlight side of the semiconductor substrate; the back contact cell further includes a passivation layer located between the semiconductor substrate and the doped semiconductor layer.

31. The back contact cell according to claim 30, characterized in that The doped semiconductor layer includes at least one of a doped polycrystalline silicon layer, a doped single crystal silicon layer, a doped amorphous silicon layer, a doped microcrystalline silicon layer, and a doped nanocrystalline silicon layer; and / or, In the case where a passivation layer is provided between the doped semiconductor layer included in the first doped region and the semiconductor substrate, the passivation layer located between the doped semiconductor layer included in the first doped region and the semiconductor substrate is a tunneling passivation layer or an intrinsic amorphous silicon layer; and / or, In the case where a passivation layer is provided between the doped semiconductor layer included in the second doped region and the semiconductor substrate, the passivation layer between the second doped region and the semiconductor substrate is a tunneling passivation layer or an intrinsic amorphous silicon layer; and / or, In the case where a passivation layer is provided between the doped semiconductor layer included in the conductive semiconductor structure and the semiconductor substrate, the passivation layer between the conductive semiconductor structure and the semiconductor substrate is a tunneling passivation layer or an intrinsic amorphous silicon layer.

32. The back contact cell according to claim 1 or 5, characterized in that The first doping region and the second doping region both include a doped semiconductor layer located on the backlight surface of the semiconductor substrate.

33. The back contact cell according to claim 1 or 6, characterized in that When one of the first doped region and the second doped region includes a doped semiconductor layer located on the backlight surface of the semiconductor substrate, and the other is located within the semiconductor substrate, the second conductive semiconductor portion is arranged above a portion of the one of the first doped region and the second doped region located within the semiconductor substrate that is away from the semiconductor substrate.

34. The back contact cell according to claim 33, characterized in that The conductive semiconductor structure further includes a third conductive semiconductor portion electrically contacting the first conductive semiconductor portion; the third conductive semiconductor portion is disposed above a portion of the doped semiconductor layer facing away from the semiconductor substrate.

35. The back contact cell according to claim 1 or 6, characterized in that When the first doped region and the second doped region are both formed in the semiconductor substrate, the conductive semiconductor structure further includes a third conductive semiconductor portion electrically contacting the first conductive semiconductor portion; one of the second conductive semiconductor portion and the third conductive semiconductor portion is arranged above a portion of one of the first doped region and the second doped region facing away from the semiconductor substrate, and the other of the second conductive semiconductor portion and the third conductive semiconductor portion is arranged above a portion of the other of the first doped region and the second doped region facing away from the semiconductor substrate.

36. The back contact cell according to claim 1 or 6, characterized in that When the corresponding setting mode of the second conductive semiconductor part is an insulating setting, the back contact battery also includes a physical spacing layer arranged between the second conductive semiconductor part and the corresponding first doping region and / or the corresponding second doping region; the physical spacing layer includes a doped silicon glass layer or a surface passivation layer.

37. The back contact cell according to claim 1 or 6, characterized in that When the corresponding setting mode of the second conductive semiconductor part is electrical contact, the back contact battery also includes a physical spacing layer arranged between the second conductive semiconductor part and the corresponding first doping region and / or the corresponding second doping region, and the physical spacing layer includes a tunneling passivation layer or an intrinsic amorphous silicon layer.

38. A photovoltaic module, characterized in that: Comprising a back contact cell as claimed in any one of claims 1 to 37.

39. A method for manufacturing a back contact battery, characterized in that: include: providing a semiconductor substrate; forming a first doping region and a second doping region on a backlight side of the semiconductor substrate; The first doping regions and the second doping regions are alternately and spaced apart on a side of the backlight surface of the semiconductor substrate, and the first doping regions and the second doping regions have opposite conductivity types; along the arrangement direction of the first doping regions and the second doping regions, the region between the first doping regions and the second doping regions is a spacing region; A conductive semiconductor structure is formed on the backlight side of the semiconductor substrate; the conductive semiconductor structure includes a first conductive semiconductor portion and a second conductive semiconductor portion in electrical contact; the first conductive semiconductor portion is located in the spacing area, and the conductivity type of the first conductive semiconductor portion is opposite to the conductivity type of one of the first doping region and the second doping region; only a portion of the first doping region and only a portion of the second doping region are respectively electrically connected to at least the first conductive semiconductor portion; the second conductive semiconductor portion is arranged above a portion of the first doping region and / or the second doping region that is away from the semiconductor substrate.

40. The method for manufacturing a back contact battery according to claim 39, wherein: The backlight surface of the semiconductor substrate has first areas and second areas that are alternately spaced, and a spacing area between the first area and the second area adjacent thereto; Forming the first doped region, the second doped region, and the conductive semiconductor structure on the backlight side of the semiconductor substrate includes: forming the first doped region in the first area; forming a doped semiconductor material layer in the first doped region, the spacer region and the second region; The doped semiconductor material layer is selectively etched to remove the portion of the doped semiconductor material layer corresponding to the first doped region and the portion of the spacing region; the doped semiconductor material layer after the selective etching forms the second doped region and at least one conductive semiconductor structure, and the second doped region is located in the second region.

41. The method for manufacturing a back contact battery according to claim 39, wherein: The backlight surface of the semiconductor substrate has first areas and second areas that are alternately spaced, and a spacing area between the first area and the second area adjacent thereto; Forming the first doped region, the second doped region, and the conductive semiconductor structure on the backlight side of the semiconductor substrate includes: forming the second doped region in the first region; forming a doped semiconductor material layer in the second doped region, the spacer region and the second region; The doped semiconductor material layer is selectively etched to remove the portion of the doped semiconductor material layer corresponding to the second doped region and the portion of the spacing region; the doped semiconductor material layer after the selective etching forms the first doped region and the conductive semiconductor structure, and the first doped region is located in the second region.

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