Evaporation source, vacuum deposition system, and method of manufacturing an organic display device

Abstract

An evaporation source configured to deposit a metallic layer on a substrate for display manufacturing having a first dimension with a first section of the first dimension and a second section of the first dimension is described. The evaporation source includes a first evaporator configured to deposit a first metal material. The first evaporator includes at least a first crucible configured to evaporate the first metal material; a first vapor distribution pipe portion in fluid communication with the first crucible and configured to deposit the first metal material along the first section; a first sealing coupled to the first crucible and configured to provide a fluid communication to the first vapor distribution pipe portion; a second vapor distribution pipe portion configured to deposit the first metal material along the second section; and a second sealing.

Description

EVAPORATION SOURCE, VACUUM DEPOSITION SYSTEM, AND METHOD OF MANUFACTURING AN ORGANIC DISPLAY DEVICETECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to evaporating and sealing of high temperature evaporators, particularly a metal material evaporation such as metals or metal alloys. Further, embodiments relate to deposition of materials for OLED manufacturing. In particular, embodiments relate to evaporation of metals and metal alloys. Specifically, embodiments relate to an evaporation source, particularly having one or more evaporators, e.g. for co-evaporation, and methods of manufacturing a display device. Further, embodiments of the present disclosure relate to a vacuum deposition system for depositing one or more layers, particularly layers including metals and metal alloys during OLED device manufacturing, on a substrate.BACKGROUND

[0002] An organic light-emitting diode (OLED) is a light-emitting diode in which an electroluminescent layer is a film of organic compound that emits light in response to an electric current. Since OLEDs emit light directly without involving any backlight and color filters, the color gamut and viewing angles possible with OLED displays are greater than viewing angles of traditional LCD displays. Further, OLEDs can be manufactured on flexible substrates, and accordingly, they can be utilized in a variety of applications.

[0003] Metallic evaporators are tools used for the production of, forexample, organic light-emitting diodes (OLED). However, also other applications utilize evaporators for depositing metal layers, for example, on large area substrates. OLEDs are a special type of light-emitting diode in which the emissive layer comprises a thin-film of certain organic compounds. OLEDs are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc., for displaying information. OLEDs can also be used for general space illumination.

[0004] Organic materials and metallic materials are deposited on a substrate in a vacuum deposition chamber for OLED manufacturing. Metallic materials are employed as, for example, electrode materials or electron transport layer (ETL) materials. The materials to be deposited are evaporated in a material deposition arrangement, and the evaporated materials are deposited on a substrate through nozzles. Metallic materials are evaporated in a material deposition arrangement at a temperature of about 1 ,000°C or above, or of about 1 ,500°C or above.

[0005] In light of the high temperature of the metal evaporation, thermal load on the substrates and / or other components during OLED manufacturing can be high. Evaporating metals, and particularly sealing a crucible to be exchanged for refilling of the crucible is challenging. For example, an evaporation crucible and a distribution pipe can be welded to each other, such that gaps or slits in the contact area of the evaporation crucible and the distribution pipe can be avoided. Alternatively, a material deposition arrangement with a sealing to evaporate metallic materials at a temperature of about 1 ,000°C or above may be provided.

[0006] In light of the demand to have a device manufacturing on larger substrate sizes, the concepts of high-temperature evaporation, such as for metallic layers, experience additional challenges such as, but not limiting to, uniform vapor distribution along at least one dimension of the substrate, longterm stability of the processes in spite of the high temperatures, and / or manufacturing limits for larger evaporators. Accordingly, it is difficult or evenimpossible to simply upscale existing concepts.

[0007] Accordingly, an improved metal or metal alloy evaporation source, an improved deposition system, and an improved metal or metal alloy evaporation is beneficial.SUMMARY

[0008] In light of the above, an evaporation source, a vacuum deposition system, and a method of manufacturing an organic display device according to the independent claims are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.

[0009] According to an embodiment, an evaporation source configured to deposit a metallic layer on a substrate for display manufacturing having a first dimension with a first section of the first dimension and a second section of the first dimension is provided. The evaporation source includes a first evaporator configured to deposit a first metal material. The first evaporator includes at least a first crucible configured to evaporate the first metal material; a first vapor distribution pipe portion in fluid communication with the first crucible and configured to deposit the first metal material along the first section; a first sealing coupled to the first crucible and configured to provide a fluid communication to the first vapor distribution pipe portion; a second vapor distribution pipe portion configured to deposit the first metal material along the second section; and a second sealing.

[0010] According to an embodiment, a vacuum deposition system is provided. The vacuum deposition system includes a vacuum deposition chamber; an evaporation source according to any of the embodiments of the present disclosure in the vacuum deposition chamber; and a substrate supporttrack configured for supporting the substrate during material deposition.

[0011] According to an embodiment, a method of manufacturing an organic display device having at least one metallic layer with an evaporation source of any of the embodiments of the present disclosure is provided. The method includes guiding at least the first metal material from the first crucible through the first vapor distribution pipe portion towards the substrate; and transporting the substrate past the evaporation source for depositing the metallic layer.BRIEF DESCRIPTION OF THE DRAWINGS

[0012] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:

[0013] FIG. 1 shows a schematic cross-sectional side view of a portion of an evaporation source according to embodiments described herein;

[0014] FIG. 2 shows a schematic view of an evaporation source having a first evaporator and a second evaporator according to embodiments described herein;

[0015] FIG. 3 shows a schematic cross-sectional side view of a portion of an evaporation source according to embodiments described herein;

[0016] FIG. 4 shows a schematic cross-sectional side view of a portion of an evaporation source according to embodiments described herein;

[0017] FIG. 5 shows a schematic cross-sectional side view of a portion of an evaporation source according to embodiments described herein;

[0018] FIG. 6A shows a schematic view of an evaporation source having a first evaporator and a second evaporator according to embodiments described herein;

[0019] FIG. 6B shows a schematic cross-sectional side view of a portion of an evaporation source according to embodiments described herein;

[0020] FIG. 7 shows a schematic cross-sectional top view of an evaporation source according to embodiments described herein and illustrates co-evaporation;

[0021] FIG. 8 shows a schematic view of a vacuum deposition system according to embodiments described; and

[0022] FIG. 9 shows a flow chart illustrating a method of manufacturing a device according to embodiments described herein.DETAILED DESCRIPTION OF EMBODIMENTS

[0023] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with any other embodiment to yield yet a further embodiment. It is intended that the present disclosure includes such modifications and variations.

[0024] Within the following description of the drawings, the same reference numbers refer to the same or to similar components. Generally, only the differences with respect to the individual embodiments are described. Unless specified otherwise, the description of a part or aspect in one embodiment can apply to a corresponding part or aspect in another embodiment as well.

[0025] Before various embodiments of the present disclosure are described in more detail, some aspects with respect to some terms and expressions used herein are explained.

[0026] In the present disclosure, a “vacuum deposition system” is to be understood as an arrangement configured for material deposition on a substrate as described herein. In particular, a “vacuum deposition system” can be understood as an assembly configured for deposition of materials, e.g. for OLED display manufacturing, on large area substrates. For instance, a “large area substrate” can have a main surface with an area of 2 m2or larger. In some embodiments, a large area substrate can be defined by substrate generations, such as GEN6, GEN7.5, GEN8.5, GEN10, GEN11 , or GEN12. According to typical embodiments, the substrates may be process as a full substrate, a halfcut substrate (H) or a quarter cut substrate (Q). For example, embodiments of the present disclosure may be utilized for GEN6F, GEN8.7H or GEN8.5Q. According to some embodiments, which can be combined with other embodiments described herein, a first dimension of the substrate, along which an evaporation source extends may be 1 .7 m or more or 2.1 m or more.

[0027] The term “substrate” as used herein may particularly embrace substantially inflexible substrates, e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate. However, the present disclosure is not limited thereto, and the term “substrate” may also embrace flexible substrates such as a web or a foil. The term “substantially inflexible” is understood to distinguish over “flexible”. Specifically, a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates. According to embodiments described herein, the substrate may be made of any material suitable for material deposition. For instance, the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials,carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.

[0028] In the present disclosure, a “vacuum deposition chamber” is to be understood as a chamber configured for vacuum deposition. The term “vacuum”, as used herein, can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar. The pressure in a vacuum chamber as described herein may be between 10’5mbar and about 10’8mbar, more particularly between 10’5mbar and 10’7mbar, and even more particularly between about 10’6mbar and about 10’7mbar. According to some embodiments, the pressure in the vacuum chamber may be considered to be either the partial pressure of the evaporated material within the vacuum chamber or the total pressure (which may approximately be the same when only the evaporated material is present as a component to be deposited in the vacuum chamber).

[0029] In the present disclosure, an “evaporation source” can be understood as a device or assembly configured for providing a source of material to be deposited on a substrate. In particular, an “evaporation source” may be understood as a device or assembly having one or more crucibles configured to evaporate the material to be deposited and one or more vapor distribution pipes, particularly having vapor distribution pipe portions, and configured for providing the evaporated material to the substrate. The vapor distribution pipe portions can have any shape providing an enclosure for the evaporated material, having openings directing the evaporated material to a substrate. The expression “a vapor distribution pipe portions configured to provide the evaporated material to the substrate” may be understood in that the distribution assembly is configured for guiding gaseous source material in a deposition direction, exemplarily indicated in FIG. 1 by arrows through the outlets. Accordingly, the gaseous source material, for example a material for depositing a thin film, such as a metal material containing thin film, of e.g. an OLED device, is guided within the distribution pipe and exits the distributionpipe through one or more outlets. For example, the one or more outlets of the distribution assembly, e.g. a distribution pipe, can be nozzles extending along an evaporation direction. The evaporation direction can be essentially horizontal.

[0030] In the present disclosure, a “crucible” can be understood as a device having a reservoir for the material to be evaporated by heating the crucible. Accordingly, a “crucible” can be understood as a source material reservoir which can be heated to vaporize the source material into a gas by at least one of evaporation and sublimation of the source material. The crucible includes a heater to vaporize the source material in the crucible into a gaseous source material. The reservoir can have an inner volume for receiving the source material to be evaporated, e.g. a metal material. For example, the volume of the crucible can be from 2000 cm3to 12000 cm3, particularly from 3000 cm3to 6000 cm3. For instance, the crucible may be a crucible for evaporating metal materials, e.g. metal materials having an evaporation temperature of above 800°C.

[0031] The vapor distribution pipe can be a linear distribution showerhead, for example, having a plurality of openings (or an elongated slit) disposed therein. A showerhead as understood herein can have an enclosure, hollow space, or pipe, in which the evaporated material can be provided or guided, for example from the evaporation crucible to the substrate.

[0032] Accordingly, a “vapor distribution pipe” or a “vapor distribution pipe portion” as described herein may be configured to provide a line source extending essentially vertically for a vertical deposition process. However, according to some embodiments, which can be combined with other embodiments described herein, also horizontal deposition processes can be utilized, wherein the line source would extend essentially horizontal. In the present disclosure, the term “essentially vertically” is understood particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction of 10° or below. This deviation can be provided because asubstrate support with some deviation from the vertical orientation might result in a more stable substrate position or may result in less particles on the substrate during substrate processing. Yet, the substrate orientation during deposition of the metal material is considered essentially vertical, which is considered different from the horizontal substrate orientation. Accordingly, the surface of the substrates can be coated by a line source extending in one direction corresponding to one substrate dimension and a translational movement, e.g. of the substrate, along the other direction corresponding to the other substrate dimension.

[0033] For increasing substrate sizes, previous concepts of metal material evaporation are difficult or impossible to upscale. For example, welding of the materials, which form components of the evaporation source, is limited with respect to the size of the components. Sealing concepts are challenging, as the liquid metal or evaporated metal may creep into slits between flanges and seals. Embodiments of the present disclosure allow to manufacture or fabricate long evaporation sources, having for example long distribution pipes, particularly, wherein components of the evaporation source are made of, or include, refractory metals. Applications at a larger scale, i.e. for larger substrate generations are possible.

[0034] Embodiments of the present disclosure provide evaporation sources, wherein welding and sealing mechanisms are combined.

[0035] FIG. 1 shows an evaporation source 100. The evaporation source includes a crucible 110 configured to have a metal material 112 provided therein. The evaporation source is configured to deposit a metallic layer on a substrate for display manufacturing. A metallic layer includes at least a first metal material, such as a metal or a metal alloy. Further, a metallic layer may include two or more metal materials, such as metals or metal alloys. Two or more metal materials can be co-evaporated to form a metallic layer, i.e. a single metallic layer.

[0036] The crucible 110 includes a flange 114. A flange 124 of a first vapor distribution pipe portion 120-1 may correspond to the flange 114 of the crucible. A sealing (not shown in FIG. 1 ) can be provided between the flanges to provide the fluid communication between the crucible and the first vapor distribution pipe portion. An opening may be provided at the bottom of the first vapor distribution pipe portion 120-1. The opening can be configured to allow fluid communication with the crucible 110, for instance, via an opening provided in a top wall of the crucible. For example, the diameter D of the opening can be selected from a range having a lower limit of 20 mm, particularly a lower limit of 40 mm, and an upper limit of 200 mm, particularly an upper limit of 100 mm. During operation of the evaporation source, evaporated metal material is guided from the crucible into the first vapor distribution pipe portion.

[0037] The evaporation source 100 further includes a second vapor distribution pipe portion 120-2. Corresponding flanges 124 of the first vapor distribution pipe portion 120-1 and the second vapor distribution pipe portion 120-2 can be sealed with a sealing.

[0038] According to embodiments of the present disclosure, and as shown in FIG. 1 , the evaporation source 100 is configured to deposit a metallic layer on a substrate 10. The substrate 10 has a first dimension, for example, the height in the case of vertical substrate processing. The first dimension has a section A and a section B. The first vapor distribution pipe portion 120-1 faces the section B to deposit metal material thereon. The second vapor distribution pipe portion 120-2 faces the section A to deposit material thereon.

[0039] According to an embodiment, an evaporation source configured to deposit a metallic layer on a substrate for display manufacturing is provided. The substrate has a first dimension with a first section of the first dimension and a second section of the first dimension. The evaporation source includes a first evaporator configured to deposit a first metal material. The first evaporator includes at least a first crucible configured to evaporate the firstmetal material; a first vapor distribution pipe portion in fluid communication with the first crucible and configured to deposit the first metal material along the first section; a first sealing coupled to the first crucible and configured to provide fluid communication to the first vapor distribution pipe portion; a second vapor distribution pipe portion configured to deposit the first metal material along the second section; and a second sealing. According to some embodiments, which can be combined with other embodiments described herein, the second sealing can be coupled to the first vapor distribution pipe portion and is configured to provide fluid communication between the first vapor distribution pipe portion and the second vapor distribution pipe portion. For example, the first sealing can be coupled to the first crucible and coupled to the first vapor distribution pipe portion.

[0040] Sealings of embodiments of the present disclosure can have first and second sealing rings interposed between a first flange and a second flange, wherein the first flange comprises a first molybdenum-containing region, wherein the second flange comprises a second molybdenum- containing region. The first sealing ring is in contact with the first molybdenum- containing region and the second sealing ring is in contact with the second molybdenum-containing region. At least surfaces of the first sealing ring and the second sealing ring comprise a carbon material. Further, a gasket can be provided between the sealing rings. For example, the gasket can be a foil or a stack of foils, such as one or more graphite foils.

[0041] In FIG. 1 , the first vapor distribution pipe portion 120-1 and the second vapor distribution pipe portion 120-2 have a first segment as indicated by reference numeral I and a second segment as indicated by reference numeral II. A plurality of first openings 122 are provided in the first segment. For example, the plurality of first openings may form one line for having the evaporation source forming a line source. Alternatively two or more lines can be provided. The plurality of first openings provide for a uniform metal material deposition on corresponding section portions of the substrate along the lengthdirection of the evaporation source 100. In the second segment shown by reference numeral II, one or more second openings 123 can be provided. The second openings 123 shown in FIG. 1 are tilted with respect to a horizontal orientation. Accordingly, compensation of deteriorations of the layer uniformity by the sealing between the first vapor distribution pipe portion and the second vapor distribution pipe portion can be provided. According to some embodiments, which can be combined with other embodiments described herein, the one or more second openings (or nozzles) are different than the plurality of first openings (or nozzles).

[0042] An inner heater 140 is provided in the first vapor distribution pipe portion and the second vapor distribution pipe portion. In embodiments as exemplarily shown in FIG. 1 , wherein the crucible 110 is provided below the distribution pipe, the inner heater 140 can be a slitted inner heater. The current can be provided by two connections provided, for example, at the top of the evaporation source.

[0043] According to some embodiments, which can be combined with other embodiments described herein, and inner heater can be a carbon heater provided by, for example, a carbon rod or a slitted carbon rod. According to other embodiments, which may be combined with embodiments of the present disclosure, the heater may be a refractory metal heater, e.g. a tungsten heater or a tantalum heater. Heating the vapor distribution pipe from inside is advantageous for high temperatures, because heat radiation provided by the inner heater, such as a center inner heater, is entirely provided for heating the vapor distribution pipe. Accordingly, there is the reduced amount of heat loss that is not utilized for heating the evaporation source.

[0044] FIG. 2 shows a front view of an evaporation source 100. The evaporation source 100 shown in FIG. 2 can be similar to the evaporation source shown in FIG. 1 . The evaporation source 100 includes a first evaporator 201 , wherein the cross-sectional side view of FIG. 1 shows one evaporator of the evaporation source. The evaporation source 100 further includes a secondevaporator 202. The first evaporator can be configured to deposit the first metal material and the second evaporator can be configured to deposit a second metal material, the second metal material being different from the first metal material. Accordingly, co-evaporation of two metal materials can be provided for depositing a metallic layer on the substrate for display manufacturing.

[0045] According to some embodiments, which can be combined with other embodiments described herein, the evaporated metal material of the first evaporator can be silver (Ag) and the evaporated metal material of the second evaporator can be magnesium (Mg). The first and second evaporated metal materials can be evaporated in a ratio between 1 :1 < Ag : Mg < 12:1 , particularly between 3:1 < Ag : Mg < 10:1.

[0046] FIG. 3 shows an evaporation source 100 illustrating yet further embodiments of the present disclosure. Vapor conduit 320 is provided to guide evaporated metal material from the crucible 110 towards the first vapor distribution pipe portion and the second vapor distribution pipe portion. The crucible 110 can be fluidly connected to the vapor conduit with the first sealing 130. Further, the vapor conduit 320 can be connected to the first vapor distribution pipe portion with a second sealing 130 and can be connected to the second vapor distribution pipe portion with the third sealing 130.

[0047] The evaporated material is guided into the vapor distribution pipe between a lower end of the vapor distribution pipe and an upper end of the vapor distribution pipe. For example, the center feed conduit or a center feed crucible can be provided.

[0048] According to some embodiments, which can be combined with other embodiments described herein, an evaporator of an evaporation source 100 may include a vapor conduit, wherein the vapor conduit is coupled to a first sealing coupled to the crucible, and wherein a second sealing is coupled to the distribution pipe portion and the second sealing. Further, a third sealingis provided, wherein the third sealing is coupled to the vapor conduit and the second vapor distribution pipe portion.

[0049] As compared to the previously described embodiments, the one or more second openings 332 provided in the segments, indicated by reference numeral II, may have a larger opening diameter or nozzle diameter, which is indicated by the enlarged arrow.

[0050] Further, the inner heater extends entirely through the vapor distribution pipe, i.e. through the first vapor distribution pipe portion and the second vapor distribution pipe portion. The inner heater 340 can extend above an upper end of the vapor distribution pipe and below a lower end of the vapor distribution pipe. Accordingly, a non-slitted inner heater can be provided. A first electrical connection can be provided at the upper end of the inner heater and a second electrical connection can be provided at the lower end of the inner heater, in order to provide a current in the inner heater, for example, the carbon rod or a rod of a refractory metal.

[0051] As shown in FIG. 3, and according to embodiments of the present disclosure, which can be combined with other embodiments described herein, the sealings, the first sealing, the second sealing, and the third sealing, can be provided with a horizontal orientation. That is, that sealing surfaces are horizontal and an opening for fluid communication through the sealing is vertical. Accordingly, a torque on the sealing can be reduced or avoided. Improved sealing can be provided, which is particularly beneficial for high temperature applications such as metal material evaporation. According to embodiments of the present disclosure, all high temperature sealings for sealing metal material vapor between components of the evaporation source can be horizontal.

[0052] Further details, features, implementations and aspects of embodiments described with respect to other figures, may similarly be implemented for embodiments described with respect to FIG. 3.

[0053] FIG. 4 illustrates evaporation source 100 with yet further modifications that can be combined with other embodiments described herein. As shown in FIG. 4, the one or more second openings 423 to compensate for the existence of sealing with respect to layer uniformity, are provided with a closer distance or pitch along the length direction of the evaporation source in the segment denoted by reference numeral II.

[0054] According to some embodiments, which can be combined with other embodiments described herein, one or more characteristics of the plurality of first openings 122 and of the one or more second openings (e.g. reference numerals 123, 323, 423) can be different. The characteristics can be selected from the group consisting of: a direction of the opening or nozzle, a diameter of the opening or nozzle, a distance between openings or nozzles, i.e. an opening density or nozzle density, and a nozzle channel length.

[0055] According to some embodiments, which can be combined with other embodiments described herein, the first vapor distribution pipe portion includes a plurality of first openings distributed along the direction of the first section and disposed in a first segment; and one or more second openings distributed along the direction of the first section and disposed in a second segment, wherein the second segment is arranged between the first sealing and the first segment and wherein the one or more second openings are different than the plurality of first openings. According to some embodiments, which can be combined with other embodiments described herein, the plurality of first openings may include a first opening type and a second, different opening type arranged to face an edge of the substrate. The second opening type may be utilized to compensate for edge effects and to allow for uniform layer deposition at the substrate edge.

[0056] As further shown in FIG. 4, the rods of the inner heater 340 can be connected with the connector 440, for example, a threaded connector in which threaded rods can be screwed into.

[0057] According to some embodiments, which can be combined with other embodiments described herein, an evaporation source may include an inner heater provided partially with the first vapor distribution pipe portion and the second vapor distribution pipe portion. For example, the inner heater may extend through, and optionally beyond, the first vapor distribution pipe portion and the second vapor distribution pipe portion. According to some implementations, the inner heater includes one or more rods. For example, the one or more rods are two or more rods that may be coupled with a connector. A rod can be a carbon rod or a rod of a refractory metal, such as tungsten or tantalum. In other words, an inner heater can be or can include a carbon rod, a refractory metal rod, such as a tungsten rod or a tantalum rod.

[0058] According to some embodiments, which can be combined with other embodiments described herein, each of the vapor distribution pipe portions can include an outer tube 125. The openings or nozzles are provided in the outer tube. Further, an inner tube 127 can be coupled to, e.g. welded to, the outer tube as sown in FIG. 1 . The inner heater can be provided in the inner tube such that the inner heater is not in direct contact with the material to be evaporated.

[0059] According to yet further embodiments, an evaporation source to deposit the metallic layer on a large area substrate can be provided as exemplarily shown in FIGS. 5, 6A and 6B. Embodiments of the present disclosure provide evaporation sources, wherein welding and sealing mechanisms are combined. According to some embodiments, which can be combined with other embodiments described herein, a stack evaporation source for large-scale deposition can be provided. An appropriate stacking of deposition sources allows to scale up metal material deposition. Accordingly, his scaling is not limited to a total lens of an individual component, such as the first vapor distribution pipe portion or the second vapor distribution pipe portion.

[0060] FIG. 5 shows a further evaporation source 100 and illustratesfurther embodiments, which can be combined with other embodiments described herein. A first crucible 110 is coupled with a sealing to vapor conduit 320. The vapor conduit guides evaporated metal material to the first vapor distribution pipe portion 120-1 , particularly the vapor conduit 320 is coupled to the first vapor distribution pipe portion between the first end of the first vapor distribution pipe portion and a second, opposing end of the first vapor distribution pipe portion. According to some embodiments, which can be combined with other embodiments described herein, vapor conduit 320 can be welded to the first vapor distribution pipe portion. Alternatively, a sealing connection as exemplarily shown in FIG. 3 may be provided.

[0061] The evaporation source 100 includes a second crucible 510. The second crucible 510 can be coupled to the second vapor distribution pipe portion similar to the coupling of the first crucible to the first vapor distribution pipe portion. The first vapor distribution pipe portion and the second vapor distribution pipe portion are separated from each other. The evaporation source 100 is configured to deposit a metallic layer on a substrate 10. The substrate 10 has a first dimension, for example, the height in the case of vertical substrate processing. The first dimension has a section A and a section B. The first vapor distribution pipe portion 120-1 faces the section B to deposit metal material thereon. The second vapor distribution pipe portion 120-2 faces the section A to deposit material thereon.

[0062] According to some embodiments, which can be combined with other embodiments described herein, the first vapor distribution pipe portion and the second vapor distribution pipe portion are displaced with respect to each other in a plane parallel to a deposition surface, e.g. a surface of the substrate. The displacement of the first vapor dispersion distribution pipe portion and the second vapor distribution pipe portion is along the dimension of the substrate, in which the sections A and B are provided.

[0063] Further, as previously described with respect to other embodiments of the present disclosure, each of the distribution pipe portions have segmentsI and II, wherein segment I includes a plurality of first openings (or a plurality of first nozzles) and segment II includes one or more second openings (or one or more second nozzles). The one or more second openings 123 are different as compared to the first openings 122 to compensate for a separation between the first vapor distribution pipe portion and the second vapor distribution by portion.

[0064] As shown in FIG. 5, according to some embodiments, which can be combined with other embodiments described herein, the inner heaters 140 of the evaporation source are slitted. The slitted arrangement of the inner heaters are provided due to the separation of the first vapor distribution pipe portion of the second vapor distribution pipe portion. The upper inner heater 140 is slitted from a top end. The lower inner heater 140 is slitted from the bottom end.

[0065] FIG. 6A shows a front view of an evaporation source 100. FIG. 6B shows a side view of the evaporation source of FIG. 6A. As explained with respect to FIG. 2, at least a first evaporator 201 and a second evaporator 202 can be provided. Having an evaporation source 100 with 2 or more evaporators allows for co-evaporation of different metal materials. Similar to the embodiments described with respect to FIG. 5, the embodiments shown in FIGS. 6A and 6B have a second vapor distribution pipe portion 120-2 separated from the first vapor distribution pipe portion 120-1 . In the case of a bottom-feed crucible, a displacement of the first vapor distribution pipe portion and the second vapor distributed portion is provided in 2 different directions in a plane parallel to the deposition surface.

[0066] Some embodiments have a sideward displacement, which results during operation in the fact that material is deposited at a different time in section A of the substrate as compared to section B of the substrate, which can result in uniform deposition of the metallic layer, particularly also for coevaporation.

[0067] Accordingly, a displacement along the first dimension of thesubstrate having the first section and the second section (A and B) can be compensated by having a plurality of first openings in segment I of a vapor evaporation pipe portion and one or more different, second openings in segment II of the vapor evaporation pipe portion. For example, the first dimension can be a height for a vertical substrate processing. A displacement in a second direction, particularly perpendicular to the direction of the first dimension, results in a time delay of the deposition of the one or more metal materials.

[0068] According to some embodiments, which can be combined with other embodiments described herein, the time delay is to be considered in light of a beneficial wide-angle deposition for OLED display manufacturing. Embodiments of the present disclosure can include material deposition from a line source, particularly a vertical line source, with wide angles, and more particularly for deposition of a continuous layer. A continuous layer deposition is provided by deposition without a fine metal mask, i.e. a mask for structured deposition, such as the deposition of pixels through mask openings.

[0069] FIG. 6B shows a mask 16. The mask 16 masks an edge of the substrate and / or edges of devices to be manufactured. The mask 16 does not provide a pixel pattern on the substrate. Accordingly, a maskless deposition in the sense of the present disclosure can be provided. In other words, a deposition is not provided in a predetermined pattern but as a continuous layer in areas in which the edges are not masked. According to some embodiments, which can be combined with other embodiments described herein, at least a first material deposition source is provided for vertical deposition of a continuous layer and is configured to be deposited masklessly, i.e. without a pattern-generation mask or a pixel-generation mask. According to some embodiments, which can be combined with other embodiments described herein, a wide-angle deposition allows for coating under an overhang structure provided on a substrate.

[0070] According to some embodiments, which can be combined withother embodiments described herein, an evaporator of an evaporation source may include a second crucible, wherein the second crucible is coupled to a second sealing and in fluid communication with the second vapor distribution pipe portion, particularly wherein the second vapor distribution pipe portion is coupled to the second sealing. The first vapor distribution pipe portion and the second vapor distribution pipe portion are displaced with respect to each other, to face the first section and the second section of the substrate. Particularly, the first vapor distribution pipe portion and the second vapor distribution pipe portion are displaced in two different directions of a plane parallel to a deposition surface.

[0071] As described above, the first vapor distribution pipe portion and a second vapor distribution pipe portion can each be welded from a plurality of components, each to form a single piece having a hollow space. The welded distribution pipe portions can be combined by sealing or stacking to provide for deposition in different sections of the substrate, the different sections being arranged along one dimension.

[0072] Yet further, embodiments relate to the above described concepts or the first evaporator and may further provide a second evaporator to evaporate second metal material for co-evaporation with the first metal material. Even though the first evaporator and the second evaporator may be slightly different to adjust for different properties of the first metal material and the second metal material, the first evaporator and the second evaporator can be essentially the same. Additionally, the first evaporator and the second evaporator may share some components, such as a controller or the like. According to some embodiments, which can be combined with other embodiments described herein, the second evaporator comprises, for example, the same number of crucibles, the same number of distribution pipe portions, and the same number of sealings as the first evaporator. Differences between the first evaporator and the second evaporator may for example include the diameter of openings or nozzles. The different opening diameters of openings or nozzles can beutilized to influence the ratio of the first metal material and the second metal material during co-evaporation. Other material-dependent differences may occur. For example, the evaporation temperature, the tube material, the crucible material, and / or the crucible size may differ. According to some embodiments, which can be combined with other embodiments described herein, the first evaporator and the second evaporator are identical except for material-dependent characteristics and / or shared components.

[0073] Embodiments of the present disclosure relate to an evaporation source including vapor distribution pipe portions and including a crucible. According to some embodiments, which can be combined with other embodiments described herein, a sealing concept that is particularly useful for high temperatures of 800°C or above, for example, 1000°C to 1500°C or even 1200°C to 1500°C is provided. Further, welded portions of the evaporation source are provided to delimit the sealing.

[0074] According to some embodiments, which can be combined with other embodiments described herein, the distribution pipe portions and the crucible, and optionally other components of the evaporation source, can include or can be made of a refractory metal, for example, Mo, W, Ta and alloys or composites thereof. For example, MoLa may be used. Accordingly, high temperatures can be provided during operation of the evaporation source.

[0075] Common vacuum sealing concepts like ConFlat (CF) or Klein Flange (KF) are not suitable for high temperatures. In particular, common sealing materials are not suitable for high temperatures. According to embodiments of the present disclosure, metal surfaces are utilized for sealing. The sealing concept according to embodiments of the present disclosure can be used for high temperatures of, for example, up to 1500°C. The flange is configured for temperatures of 800°C or above. The sealing surfaces have a high temperature stable metal material, for example including Mo, Ta, W, alloys thereof or combinations or compositions thereof.

[0076] FIG. 7 shows a more detailed schematic cross-sectional top view of an evaporation source according to embodiments described herein. In particular, FIG. 7 shows a cross-sectional top view of an evaporation source including a first evaporator 701 and a second evaporator 702.

[0077] Accordingly, from FIG. 7, it can be seen that, e.g. two evaporators (or three evaporators) can be provided next to each other. Accordingly, an evaporation source can be provided as an array of evaporators, e.g. wherein more than one kind of material can be evaporated at the same time. In particular, with exemplary reference to FIG. 7, the evaporation source of a vacuum deposition system may include two evaporators, e.g. a first evaporator 701 and a second evaporator 702.

[0078] Each evaporator can include two or more distribution pipe portions as described herein and a crucible as described herein, wherein first and second sealing rings are interposed between a first flange and a second flange, wherein the first flange comprises a first molybdenum-containing region, wherein the second flange comprises a second molybdenum- containing region, wherein the first sealing ring is in contact with the first molybdenum-containing region, wherein the second sealing ring is in contact with the second molybdenum-containing region, and wherein at least surfaces of the first sealing ring and the second sealing ring comprise a carbon material. Further, a gasket can be provided between the sealing rings. For example, the gasket can be a foil or a stack of foils, such as one or more graphite foils.

[0079] It is to be understood that the description with respect to the features of the evaporation source 100 as described with reference to FIGS. 1-6B, may also be applied to the evaporators shown in FIG. 7.

[0080] According to embodiments which can be combined with any other embodiment described herein, an evaporation source control housing 750 may be provided adjacent to at least one of the evaporators. The evaporators each have a first vapor distribution pipe portion 120-1 . In particular, the evaporationsource control housing can be configured to maintain atmospheric pressure therein and is configured to house at least one element selected from the group consisting of: a switch, a valve, a controller, a cooling unit, a cooling control unit, a heating control unit, a power supply, and a measurement device. FIG. 7 further shows the inner heaters 140 of the evaporators.

[0081] In FIG. 7, for illustrative purposes, evaporated source material exiting the outlets of the evaporators are indicated by arrows. Due to the shape of the distribution assemblies, the evaporation cones originating from the three distribution assemblies are in close proximity to each other, such that mixing of the source material from the different distribution assemblies can be improved. In particular, the shape of the cross-section of the distribution pipes allows to place the outlets or nozzles of neighboring distribution pipes close to each other.

[0082] As shown in FIG. 8, according to an embodiment, a vacuum deposition system 800 is provided. The vacuum deposition system includes one or more vacuum deposition chambers 810 and one or more evaporation sources 100 according to embodiments of the present disclosure. The one or more evaporation sources are provided in the one or more vacuum deposition chambers. Further, the vacuum deposition system includes a substrate support track configured for supporting the substrate during material deposition.

[0083] FIG. 8 shows vacuum deposition system 800. The vacuum deposition system includes a plurality of vacuum chambers. The one or more vacuum chambers include a vacuum deposition chamber 810 and a vacuum transfer chamber 830. FIG. 8 exemplarily shows three vacuum deposition chambers and two vacuum transfer chambers. A glass handling module 850 can be provided at one end of the vacuum deposition system 800. The glass handling module can load and / or unload substrates into the vacuum deposition system, e.g. onto a respective substrate carrier. Further, a rotation module 840, for example, a vacuum rotation module, can be provided at a second endof the substrate processing system, which is distal to the mask handling module.

[0084] The vacuum deposition system as shown in FIG. 8 is an in-line vacuum deposition system. Substrates to be processed in the vacuum deposition system 800 are loaded at the glass handling module, for example, on substrate carriers, and are unloaded at the glass handling module, for example from substrate carriers. Substrates can be transported on the first substrate support track 832 in one direction, for example, from left to right in FIG. 8. The substrate can be rotated in a rotation module and transferred to a second substrate support track 832. The substrates can be transported, for example, from right to left, on the second substrate support track in order to be unloaded at the glass handling module. Accordingly, an empty carrier is provided, after unloading a processed substrate, at the same position at which a new substrate is to be loaded on the empty carrier. Thus, transportation of empty carriers, for example, on a carrier return path, can be avoided or reduced. Further, exposure of a carrier to an atmospheric condition can be avoided or reduced to a minimum.

[0085] Further, the rotation module allows for “folding” the substrate processing system. As exemplarily shown in FIG. 8, the substrate processing system can include a forward transportation path on a first substrate support track for depositing a first group of material layers, for example organic layers, on the substrate and a backward transportation path on the second substrate support track for depositing a second group of material layers over the first group of material layers. The substrate is rotated between the forward transportation path and the backward transportation path by the rotation module 840. By “folding” the substrate processing system, the length of the substrate processing system can be reduced.

[0086] The in-line substrate processing system can be a display manufacturing system or a part of a display manufacturing system, in particular an OLED display manufacturing system, and more particularly, an OLEDdisplay manufacturing system for large area substrates. The transport of a substrate carrier, i.e. the movement of a substrate carrier through the in-line substrate processing system can, for example, be carried out in a vertically orientated state of the substrate carrier. For example, substrate carriers can be configured to hold a substrate, such as a glass plate, in a vertically orientated state or a substantially vertically orientated state.

[0087] According to some embodiments, which can be combined with other embodiments described herein, the substrate carriers can be configured for holding or carrying the substrate or the substrate and a mask in a substantially vertical orientation. As used throughout the present disclosure, “vertical” or “substantially vertical” is understood, particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction or orientation of ±20° or below, e.g. of ±10° or less. Such a deviation can be provided, for example, because a substrate support with some deviation from the vertical orientation might result in a more stable substrate position. Further, fewer particles reach the substrate surface when the substrate is tilted forward. However, the substrate orientation, e.g., during the deposition of materials, such as organic or metallic materials, on a substrate in a high vacuum, is considered as substantially vertical, which is considered different from the horizontal substrate orientation, which may be considered as horizontal ±20° or less.

[0088] As shown in FIG. 8, a substrate support track 832 can be provided. According to some embodiments, a substrate support track can be configured for contactless transportation of a substrate carrier. The contactless transportation may be a magnetic levitation system. In particular, the magnetic levitation system may be provided so that at least a part of the weight of a substrate carrier is carried by the magnetic levitation system. The carriers can then be guided essentially contactlessly along a substrate support track through the in-line substrate processing system. In particular, the transportation may include a carrier holding structure and carrier drivingstructure. A carrier holding structure can be configured for a contactless holding of a carrier. A carrier driving structure can be configured for a contactless translation of a carrier. A carrier holding structure may include a magnetic levitation system for contactless holding of a substrate carrier. Further, a carrier driving structure may include a magnetic drive system for a contactless driving of a carrier.

[0089] Deposition sources can be provided in the vacuum processing system. According to some embodiments, which can be combined with other embodiments described herein, a deposition source 820 can be an organic deposition source. Additionally, an evaporation source 100 can be a metal deposition source, for example, to deposit a cathode of the device to be manufactured on the substrate. As shown in FIG. 8, according to some embodiments, which can be combined with other embodiments described herein, an evaporation source 100 according to any of the embodiments described herein, can be provided in one of the vacuum deposition chambers.

[0090] According to one embodiment, a vacuum deposition system is provided. The vacuum deposition system includes a vacuum deposition chamber; an evaporation source according to any of the embodiments described herein. The evaporation source is provided in the vacuum deposition chamber. Further a substrate support track configured for supporting the substrate during material deposition is provided. According to some embodiments, which can be combined with other embodiments described herein, the substrate support track can be configured to move the substrate past the evaporation source during operation of the evaporation source. Particularly, a dynamic deposition can be provided and more particularly, for a maskless deposition process as described herein. For example, the evaporation source is stationary with respect to a translational movement along the substrate support track. Additionally, the evaporation source can be rotatable, particularly to move the evaporation source in an idle position, i.e. a position in which no evaporation occurs towards a substrate.

[0091] According to an embodiment, as shown in FIG. 9, a method 900 of manufacturing an organic display device having at least one metallic layer with an evaporation source according to any of the embodiments of the present disclosure is provided.

[0092] The method 900 includes in block 910 guiding at least a first metal or metal alloy from the first crucible through the first vapor distribution pipe portion towards the substrate. The method 900 further includes in block 920, transporting the substrate past the evaporation source for depositing the metallic layer.

[0093] According to embodiments of the present disclosure, an evaporation source with two or more vapor distribution pipe portions are provided. Accordingly, a first section along a substrate dimension and a second section along the substrate dimension can be coated. A line source extending along at least one dimension of the substrate, being longer than one substrate dimension can be provided. By transporting the substrate along the evaporation source, the substrate can be coated, particularly without a pixel mask.

[0094] According to some embodiments, which can be combined with other embodiments described herein, deposition can be provided as a wide- angle deposition. For example, a wide-angle deposition can have a full angle of an evaporation plume of at least 50°, particularly at least 60° or even 70°. The wide-angle deposition can be utilized for depositing a material under an overhang structure of a pixel of a display. The material is deposited under an overhang structure in a direction along the first dimension, e.g. vertical, and a further direction along a second dimension, e.g. horizonal. Particularly for the first dimension, which corresponds to the length of the combined length of the first vapor distribution pipe portion and the second vapor distribution pipe portion, the evaporation source is longer than the substrate dimension. Accordingly, the wide-angle deposition can be provided along this dimension. According to some embodiments, which can be combined with otherembodiments described herein, the line source provided by the evaporation source extends over the first dimension of the substrate (e.g. vertical). For example, the over-scan length, e.g. for vertical processing at the top and the bottom, can each be larger than a distance between an opening or nozzle (i.e. vapor nozzle in the distribution pipe portion) and a substrate receiving area or substrate. For example, the over-scan length (each at top and bottom) can be 110% or more of the distance, 115% or more of the distance, or even 120% or more. Additionally, the plurality of first openings of a vapor distribution pipe portion may include a first opening type and a second, different opening type arranged to face an edge of the substrate. The second opening type may be utilized to compensate for edge effects and to allow for uniform layer deposition at the substrate edge.

[0095] According to some embodiments, which can be combined with other embodiments described herein, the method includes forming a metallic layer on a substrate comprising the first metal material and a second metal material. The method may include the process of forming a metallic layer on a substrate including a mixture of the first metal material and the second metal material. According to an embodiment, the evaporated materials of the first evaporator may be silver (Ag). The evaporated material of the second evaporator may be magnesium (Mg). The evaporated material of the first evaporator, e.g. Ag, and the evaporated material of the second evaporator, e.g. Mg, may be evaporated in a ratio of 1 :1 < Ag : Mg < 12:1 , particularly in a ratio of 3: 1 < Ag : Mg < 10: 1

[0096] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

CLAIMS1 . An evaporation source configured to deposit a metallic layer on a substrate for display manufacturing having a first dimension with a first section of the first dimension and a second section of the first dimension, comprising: a first evaporator configured to deposit a first metal material, comprising: at least a first crucible configured to evaporate the first metal material; a first vapor distribution pipe portion in fluid communication with the first crucible and configured to deposit the first metal material along the first section; a first sealing coupled to the first crucible and configured to provide a fluid communication to the first vapor distribution pipe portion; a second vapor distribution pipe portion configured to deposit the first metal material along the second section; and a second sealing.

2. The evaporation source of claim 1 , wherein the second sealing is coupled to the first vapor distribution pipe portion and is configured to provide a fluid communication between the first vapor distribution pipe portion and the second vapor distribution pipe portion.

3. The evaporation source of any of claims 1 to 2, wherein the first vapor distribution pipe portion comprises: a plurality of first openings distributed along a direction of the first section and disposed in a first segment; and one or more second openings distributed along a direction of the second section and disposed in a second segment, wherein the second segment is arranged between the first sealing and the first segment and wherein the one or more second openings are different than the plurality of first openings.

4. The evaporation source of any of claims 1 to 3, further comprising: an inner heater provided partially with the first vapor distribution pipe portion and the second vapor distribution pipe portion and extending through the first vapor distribution pipe portion and the second vapor distribution pipe portion.

5. The evaporation source of claim 4, wherein the inner heater comprises: one or more rods, particularly one or more carbon rods, or one or more refractor metal rods.

6. The evaporation source according to claim 5, wherein the one or more rods are two or more rods coupled with a connector.

7. The evaporation source according to any of claims 4 to 6, wherein each of the first vapor distribution pipe portion and the second vapor distribution pipe portion include an inner tube and an outer tube at least partially surround the inner tube, and wherein the inner heater is provided within the inner tube.

8. The evaporation source of any of claims 1 to 7, wherein the first sealing is oriented horizontally and the second sealing is oriented horizontally.

9. The evaporation source of any of claims 1 to 8, wherein the first sealing is coupled to the first crucible and coupled to the first vapor distribution pipe portion.

10. The evaporation source of any of claims 1 to 8, wherein the first evaporator comprises: a vapor conduit, wherein the vapor conduit is coupled to the first sealing and wherein the second sealing is coupled to the first vapor distribution pipe portion and the second sealing; and a third sealing, wherein the third sealing is coupled to the vapor conduit and the second vapor distribution pipe portion.11 . The evaporation source of any of claims 1 to 8, wherein the first evaporator further comprises:a second crucible, wherein the second crucible is coupled to the second sealing and in fluid communication with the second vapor distribution pipe portion, particularly wherein the second vapor distribution pipe portion is coupled to the second sealing, and wherein the first vapor distribution pipe portion and the second vapor distribution pipe portion are displaced with respect to each other to face the first section and the second section of the substrate, particularly the first vapor distribution pipe portion and the second vapor distribution pipe portion are displaced in two different directions of a plane parallel to a deposition surface.

12. The evaporation source of any of claims 1 to 11 , wherein the first vapor distribution pipe portion and the second vapor distribution pipe portion are each welded from a plurality of components, each to form a single piece having a hollow space.

13. The evaporation source of any of claims 1 to 12, further comprising: a second evaporator extending in parallel to the first evaporator and configured to evaporate a second metal material for co-evaporation with the first metal material.

14. The evaporation source of claim 13, wherein the second evaporator comprises the same number of crucibles, the same number of distribution pipe portions, and the same number of sealings as the first evaporator.

15. The evaporation source of any of claim 1 to 14, wherein the first sealing and the second sealing, each comprise:first and second sealing rings interposed between a first flange and a second flange, wherein the first flange comprises a first molybdenum- containing region, wherein the second flange comprises a second molybdenum-containing region, wherein the first sealing ring is in contact with the first molybdenum-containing region, wherein the second sealing ring is in contact with the second molybdenum-containing region, and wherein at least surfaces of the first sealing ring and the second sealing ring comprise a carbon material; and a gasket can be provided between the sealing rings, particularly wherein the gasket can be a foil or a stack of foils.

16. A vacuum deposition system, comprising: a vacuum deposition chamber; an evaporation source according to any of claims 1 to 15 in the vacuum deposition chamber; and a substrate support track configured for supporting the substrate during material deposition.

17. The vacuum deposition system of claim 16, wherein the substrate support track is configured to move the substrate past the evaporation source during operation of the evaporation source.

18. The vacuum deposition system of any of claims 16 to 17, wherein the evaporation source is stationary with respect to a translational movement along the substrate support track.

19. The vacuum deposition system of claim 18, wherein the evaporation source is rotatable.

20. A method of manufacturing an organic display device having at least one metallic layer with an evaporation source of any of claims 1 to 15, the method comprising: guiding at least the first metal material from the first crucible through the first vapor distribution pipe portion towards the substrate; and transporting the substrate past the evaporation source for depositing the metallic layer.

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