Substrate treatment apparatus and substrate treatment method

Abstract

The present invention provides a method for treating a substrate. The substrate processing method according to an embodiment includes: a processing step of processing a substrate by generating a process plasma in a chamber; and a cleaning step of removing particle sources present in the chamber by generating a cleaning plasma in the chamber, wherein the process plasma is generated by exciting a fluorine-containing gas, and the cleaning plasma may be generated by exciting oxygen gas and nitrogen gas.

Description

Substrate processing device and substrate processing method

[0001] The present invention relates to a substrate processing device and method, and more particularly, to a device and method for processing a substrate using plasma.

[0002] Plasma is an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by extremely high temperatures, strong electric fields, or radio-frequency electromagnetic fields (RF electromagnetic fields). Semiconductor device manufacturing processes often involve ashing or etching, which use plasma to remove thin films on substrates. These processes occur when ions and radical particles contained in the plasma collide with or react with the film on the substrate.

[0003] Plasma generated during the process of processing a preceding substrate may damage the inner walls of the chamber or components contained in the chamber, resulting in the generation of particles. Consequently, after performing a predetermined process on a preceding substrate using plasma, a large number of particles may adhere to the succeeding substrate when processing the succeeding substrate. If particles adhere to the succeeding substrate, it becomes difficult for the succeeding substrate to be uniformly processed by the plasma. In particular, with the recent trend of requiring substrates with fine patterns, the aspect ratio (AR) of the patterns is increasing. If particles adhere to a substrate with a pattern having a high AR ratio, the adhered particles are difficult to remove from the substrate. Therefore, it is necessary to prevent particles from adhering to the succeeding substrate being processed in advance.

[0004] The purpose of the present invention is to provide a substrate processing device and method capable of uniformly processing a substrate.

[0005] In addition, the present invention aims to provide a substrate processing device and method capable of efficiently removing a particle source that can be attached to a subsequent substrate from a chamber.

[0006] In addition, the present invention aims to provide a substrate processing device and method capable of minimizing the number of particles attached to a subsequent substrate after processing a preceding substrate.

[0007] The problems to be solved by the present invention are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0008] The present invention provides a method for processing a substrate. In one embodiment, the substrate processing method comprises a processing step of processing a substrate by generating a process plasma within a chamber; and a cleaning step of generating a cleaning plasma within the chamber to remove a particle source present within the chamber, wherein the process plasma may be generated by exciting a fluorine-containing gas, and the cleaning plasma may be generated by exciting oxygen gas and nitrogen gas.

[0009] In one embodiment, in the cleaning step, the ratios of the oxygen gas and the nitrogen gas supplied into the chamber may be different.

[0010] In one embodiment, during the cleaning step, the total amount of oxygen gas supplied into the chamber may be greater than the total amount of nitrogen gas supplied into the chamber.

[0011] In one embodiment, the ratio of the oxygen gas and the nitrogen gas may be 8:2.

[0012] In one embodiment, in the cleaning step, the oxygen gas and the nitrogen gas can be simultaneously supplied into the chamber.

[0013] In one embodiment, in the cleaning step, the oxygen gas and the nitrogen gas can be alternately supplied into the chamber.

[0014] In one embodiment, in the cleaning step, the oxygen gas and the nitrogen gas can each be pulse-supplied into the chamber.

[0015] In one embodiment, the particle source may be a material comprising aluminum and fluorine.

[0016] In one embodiment, the inner wall of the chamber may be lined with a material comprising aluminum.

[0017] In one embodiment, the cleaning plasma and the particle source can react spontaneously.

[0018] In one embodiment, the processing step and the cleaning step may be performed multiple times in one cycle.

[0019] In one embodiment, the cleaning step may be performed before a subsequent substrate is introduced into the chamber after processing the preceding substrate in the processing step, or while the chamber is in an idle state.

[0020] In addition, the present invention provides a device for processing a substrate. In one embodiment, the substrate processing device includes: a first chamber having a processing space for processing a substrate; a second chamber for generating plasma in a discharge space therein; a gas supply unit for supplying a gas excited by the plasma to the discharge space; and a controller for controlling the gas supply unit, wherein the gas supply unit includes: a first gas supply unit for supplying a fluorine-containing gas to the discharge space; and a second gas supply unit for supplying oxygen gas and nitrogen gas to the discharge space, wherein the controller controls the first gas supply unit and the second gas supply unit to supply the fluorine-containing gas to the discharge space to generate process plasma in the discharge space, diffuse the process plasma into the processing space to process a substrate in the processing space, and then supply the oxygen gas and nitrogen gas into the discharge space to generate cleaning plasma in the discharge space, and diffuse the cleaning plasma into the processing space to remove a particle source generated in the first chamber during the process of processing the substrate.

[0021] In one embodiment, the controller can control the first gas supply unit and the second gas supply unit so that the total amount of the oxygen gas supplied to the discharge space is greater than the total amount of the nitrogen gas supplied to the discharge space.

[0022] In one embodiment, the ratio of the oxygen gas and the nitrogen gas may be 8:2.

[0023] In one embodiment, the inner wall of the first chamber may be lined with a material including aluminum.

[0024] In one embodiment, the particle source may be a material comprising aluminum and fluorine.

[0025] In one embodiment, the first gas supply unit may include a first gas line connected to the first chamber; and a first flow rate controller installed in the first gas line to control a flow rate of the fluorine-containing gas supplied to the discharge space, and the second gas supply unit may include a second-first gas line connected to the first chamber to supply the oxygen gas to the discharge space; a second-second gas line connected to the first chamber to supply the nitrogen gas to the discharge space; a second-first flow rate controller installed in the second-first gas line to control a flow rate of the oxygen gas supplied to the discharge space; and a second-second flow rate controller installed in the second-2 gas line to control a flow rate of the nitrogen gas supplied to the discharge space.

[0026] In one embodiment, the device further includes a diffusion chamber disposed between the first chamber and the second chamber to diffuse the plasma generated in the discharge space into the processing space, and the diffusion chamber may have a shape in which its width increases from the top to the bottom.

[0027] In addition, the present invention provides a method for processing a substrate. In one embodiment, the substrate processing method comprises: a processing step of processing a substrate by diffusing process plasma into a chamber for processing the substrate; and a cleaning step of removing a particle source existing in the chamber by diffusing cleaning plasma into the chamber, wherein in the processing step, the substrate is processed using the process plasma generated by exciting a fluorine-containing gas supplied into the chamber, and in the cleaning step, the particle source generated in the chamber in the processing step is removed using the cleaning plasma generated by exciting oxygen gas and nitrogen gas supplied into the chamber, and the cleaning step is performed before a subsequent substrate is loaded into the chamber after processing a preceding substrate in the processing step, or while the chamber is in an idle state, and the ratio of the total amount of the oxygen gas and the nitrogen gas supplied into the chamber to generate the cleaning plasma may be 8:2.

[0028] According to one embodiment of the present invention, the preceding substrate and the succeeding substrate can be processed uniformly.

[0029] Additionally, according to one embodiment of the present invention, a particle source that may be attached to a subsequent substrate can be efficiently removed from the chamber.

[0030] Additionally, according to one embodiment of the present invention, the number of particles attached to a subsequent substrate after processing a preceding substrate can be minimized.

[0031] The effects of the present invention are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0032] FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment.

[0033] Figure 2 is a flow chart of a substrate processing method according to one embodiment.

[0034] Figure 3 is a flowchart schematically showing one cycle of a substrate processing method according to one embodiment.

[0035] FIG. 4 is a graph schematically showing the number of fluorine ions measured on a substrate according to a mixing ratio of nitrogen gas and oxygen gas according to one embodiment.

[0036] FIG. 5 is a comparative diagram schematically showing the number of particles measured on a substrate according to the number of repetitions of one cycle of a substrate processing method according to one embodiment.

[0037] Figure 6 is a flowchart schematically showing one cycle of a substrate processing method according to another embodiment.

[0038] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited by the embodiments described below. These embodiments are provided to more fully explain the present invention to those of ordinary skill in the art. Therefore, the shapes of components in the drawings are exaggerated for clarity.

[0039] While terms like "first" and "second" may be used to describe various components, these components should not be limited by these terms. These terms may be used to distinguish one component from another. For example, without departing from the scope of the present invention, a first component could be referred to as a "second component," and similarly, a second component could also be referred to as a "first component."

[0040] FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment.

[0041] A substrate processing device (1) according to one embodiment may include a processing unit (20), a plasma generation unit (40), and a diffusion unit (60).

[0042] In the processing unit (20), a substrate (W) is processed using plasma. The processing unit (20) may include a first chamber (220), a support unit (240), an exhaust baffle (260), and a baffle (280).

[0043] The first chamber (220) may have an open upper portion. The first chamber (220) has a processing space (222) therein. The processing space (222) functions as a space where a substrate (W) is processed. A support unit (240) and an exhaust baffle (260), which will be described later, may be arranged in the processing space (222).

[0044] A bottom hole is formed at the bottom of the first chamber (220). The bottom hole is connected to an exhaust line (224). A pump (not shown) is installed in the exhaust line (224). Impurities (byproducts) generated during the process of processing the substrate (W) or gases remaining within the processing space (222) are discharged to the outside of the processing space (222) through the exhaust line (224).

[0045] A liner (226) may be provided on the inner wall of the first chamber (220). The liner (226) is provided along the periphery of the inner wall of the first chamber (220). The liner (226) protects the inner wall of the first chamber (220). In the process of processing the substrate (W) using plasma, an arc discharge may occur inside the first chamber (220). Accordingly, by allowing the liner (226) to be primarily exposed to the plasma, damage to the inner wall of the first chamber (220) by the plasma can be minimized. The liner (226) may be made of a material including aluminum. For example, the liner (226) may be made of aluminum oxide (Al2O3). However, the present invention is not limited to the above-described example, and the liner (226) may be provided on the inner wall of at least one of the second chamber (420) and the diffusion chamber (620) described below.

[0046] The support unit (240) supports the substrate (W) in the processing space (222). The support unit (240) can chuck the substrate (W) using electrostatic force. Alternatively, the support unit (240) can support the substrate (W) in various ways, such as vacuum suction or mechanical clamping. It may include a support plate (242) and a support shaft (244). The substrate (W) is mounted on the upper surface of the support plate (242). When the support unit (240) supports the substrate (W) using electrostatic force, the support plate (242) can be connected to an external direct current power source. The support shaft (244) is coupled to the lower end of the support plate (242). The support shaft (244) can move the support plate (242) up and down. Accordingly, the position of the substrate (W) supported on the support plate (242) can be changed.

[0047] The exhaust baffle (260) uniformly exhausts the atmosphere within the processing space (222). The exhaust baffle (260) has a generally ring shape. The exhaust baffle (260) is arranged between the first chamber (220) and the support unit (240). More specifically, the exhaust baffle (260) is arranged between the inner surface of the liner (226) and the outer surface of the support plate (242).

[0048] A plurality of exhaust holes (262) are formed in the exhaust baffle (260). The exhaust holes (262) may penetrate the top and bottom of the exhaust baffle (260). The exhaust holes (262) may be arranged spaced apart from each other along the circumferential direction of the exhaust baffle (260).

[0049] A baffle (280) may be disposed between the processing unit (20) and the diffusion unit (60) described below. In addition, the baffle (280) may be disposed on the upper side of the support unit (240). The baffle (280) may evenly distribute plasma diffused inside the diffusion unit (60) to the processing space (222). The baffle (280) may have a generally circular shape. A plurality of baffle holes (282) may be formed in the baffle (280). The plurality of baffle holes (282) are disposed to be spaced apart from each other. The plurality of baffle holes (282) may penetrate the upper and lower ends of the baffle (280). The baffle holes (282) may function as a passage through which plasma flows.

[0050] Plasma can be generated in the plasma generation unit (40). The plasma generation unit (40), the diffusion unit (60) described below, and the processing unit (20) are sequentially positioned in a direction from top to bottom. The plasma generation unit (40) can include a second chamber (420), a gas supply unit (430, 440, 450), and a power application unit (480).

[0051] The second chamber (420) has a discharge space (422) therein. The discharge space (422) can function as a space where plasma is generated. In addition, the second chamber (420) can have a cylindrical shape with an open upper surface and a lower surface. A gas supply port (424) can be arranged on the open upper surface of the second chamber (420). The open upper surface of the second chamber (420) can be sealed by the gas supply port (424). The gas supply port (424) can be connected to a main gas line (430) described later. In addition, a diffusion chamber (620) described later can be connected to the open lower surface of the second chamber (420).

[0052] The gas supply unit (430, 440, 450) supplies gas to the discharge space (422). The gas supply unit (430, 440, 450) may include a main gas line (430), a first gas supply unit (440), and a second gas supply unit (450).

[0053] One end of the main gas line (430) is connected to the gas supply port (424). In addition, the other end of the main gas line (430) is connected to the first gas line (442), the second-first gas line (451), and the second-second gas line (455) described below.

[0054] The first gas supply unit (440) supplies process gas to the discharge space (422) via the main gas line (430) and the gas supply port (424). The process gas according to one embodiment may include a fluorine-containing gas. Furthermore, the process gas according to one embodiment may be excited into process plasma in the discharge space (422). A specific mechanism for processing the substrate (W) using the process plasma will be described later.

[0055] The first gas supply unit (440) may include a first gas line (442), a first gas source (444), a first gas valve (446), and a first flow regulator (448).

[0056] One end of the first gas line (442) is connected to the main gas line (430), and the other end is connected to the first gas source (444) in which process gas is stored. A first gas valve (446) and a first flow controller (448) may be installed in the first gas line (442). The first gas valve (446) may be an on-off valve. The first flow controller (448) may control the flow rate of gas flowing in the first gas line (442). For example, the first flow controller (448) may be either a regulator or a flow control valve. However, the present invention is not limited thereto, and the first flow controller (448) may be any one of known flow controllers that control the flow rate of a fluid. The first gas valve (446) may be installed downstream of the first gas line (442) from the first flow regulator (448). However, this is not limited to the first flow regulator, and the first gas valve (446) may be installed downstream of the first gas line (442).

[0057] The second gas supply unit (450) supplies cleaning gas to the discharge space (422) via the main gas line (430) and the gas supply port (424). The cleaning gas according to one embodiment may include oxygen gas and nitrogen gas. Furthermore, the cleaning gas according to one embodiment may be excited into cleaning plasma in the discharge space (422). A specific mechanism utilizing the cleaning plasma will be described later.

[0058] The second gas supply unit (450) may include a second-1 gas line (451), a second-1 gas source (452), a second-1 gas valve (453), a second-1 flow regulator (454), a second-2 gas line (455), a second-2 gas source (456), a second-2 gas valve (457), and a second-2 flow regulator (458).

[0059] One end of the second-1 gas line (451) is connected to the main gas line (430), and the other end is connected to the second-1 gas source (452). In one embodiment, oxygen gas can be stored in the second-1 gas source (452). In addition, a second-1 gas valve (453) and a second-1 flow regulator (454) can be installed in the second-1 gas line (451).

[0060] One end of the second-second gas line (455) is connected to the main gas line (430), and the other end is connected to the second-second gas source (456). In one embodiment, nitrogen gas can be stored in the second-second gas source (456). In addition, a second-second gas valve (457) and a second-second flow regulator (458) can be installed in the second-second gas line (455).

[0061] The functions and structures of the 2-1 gas valve (453) and the 2-2 gas valve (457) are mostly the same or similar to those of the above-described 1st gas valve (446), and the functions and structures of the 2-1 flow controller (454) and the 2-2 flow controller (458) are mostly the same or similar to those of the above-described 1st flow controller (448), so a duplicate description thereof is omitted.

[0062] The power application unit (480) generates an electric field in the discharge space (422). The power application unit (480) may include an antenna (482) and a power source (484).

[0063] An antenna (482) according to one embodiment may be an inductively coupled plasma (ICP) antenna. The antenna (482) may have a coil shape. The antenna (482) may be wound multiple times around the second chamber (420) outside the second chamber (420).

[0064] The power source (484) applies power to the antenna (482). More specifically, the power source (484) can apply high-frequency power to the antenna (482). The high-frequency power applied to the antenna (482) can generate an electric field (induced electric field) in the discharge space (422). The process gas supplied into the discharge space (422) by the first gas supply unit (440) described above can be converted into process plasma by obtaining energy required for ionization from the electric field generated within the discharge space (422). In addition, the cleaning gas supplied into the discharge space (422) by the second gas supply unit (450) described above can be converted into cleaning plasma by obtaining energy required for ionization from the electric field generated within the discharge space (422).

[0065] The diffusion unit (60) diffuses the plasma generated in the plasma generation unit (40) into the processing space (222). The diffusion unit (60) may include a diffusion chamber (620). The diffusion chamber (620) is disposed between the first chamber (220) and the second chamber (420). More specifically, the diffusion chamber (620) is disposed above the first chamber (220) and below the second chamber (420). The upper portion of the diffusion chamber (620) may have a generally cylindrical shape. In addition, the lower portion of the diffusion chamber (620) may have a generally inverted funnel shape. That is, the lower portion of the diffusion chamber (620) may have a shape in which the width increases from the upper portion to the lower portion.

[0066] In addition, the diffusion chamber (620) has a diffusion space (622) therein. Openings are formed at the top and bottom of the diffusion chamber (620). The opening formed at the top of the diffusion chamber (620) communicates with the discharge space (422) of the second chamber (420). In addition, the opening formed at the bottom of the diffusion chamber (620) communicates with the processing space (222) of the first chamber (220). Accordingly, the plasma generated in the discharge space (422) is diffused within the diffusion space (622). The plasma diffused within the diffusion space (622) is uniformly distributed to the processing space (222) via the baffle hole (282).

[0067] The controller (700) can control the components included in the substrate processing device (1). More specifically, the controller (700) can control the operation of the gas supply unit (430, 440, 450) and the power application unit (480). The controller (700) may be equipped with a process controller including a microprocessor (computer) that executes control, a user interface including a keyboard through which an operator performs command input operations, a display that visually displays the operating status, and a memory unit in which a control program or a program for executing processing in each component according to various data and processing conditions, i.e., a processing recipe, is stored. In addition, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium among the memory units, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0068] Hereinafter, a substrate processing method according to one embodiment will be described. The substrate processing method described below can be performed by the substrate processing device described with reference to FIG. 1. Accordingly, the substrate processing method according to one embodiment will be described below by citing the reference symbols shown in FIG. 1 as they are. In addition, the substrate processing method described below can be performed by the above-described controller (700) controlling the components included in the substrate processing device (1).

[0069] Fig. 2 is a flow chart of a substrate processing method according to one embodiment. Fig. 3 is a flow chart schematically showing one cycle of a substrate processing method according to one embodiment.

[0070] A substrate processing method according to one embodiment may include a processing step (S100) and a cleaning step (S200). The processing step (S100) and the cleaning step (S200) may be performed in a time-series order.

[0071] In the processing step (S100), the first gas supply unit (440) supplies a process gas (G1) to the discharge space (422). The process gas (G1) supplied to the discharge space (422) is excited into a process plasma by an electric field generated in the discharge space (422). The process plasma generated in the discharge space (422) is supplied to the processing space (222) via the diffusion space (622). The process plasma supplied to the processing space (222) interacts with the substrate (W) to process the substrate (W).

[0072] For example, in the processing step (S100), a thin film on the substrate (W) can be etched using process plasma. In addition, in the processing step (S100), a thin film on the substrate (W) can be ashed using process plasma. The thin film according to one embodiment may include various types of films, such as a polysilicon film, an oxide film, or a silicon nitride film. In addition, the thin film may include a natural oxide film or a chemically generated oxide film. In addition, in the processing step (S100), impurities (Byproduct) remaining on the substrate (W) can be removed. In addition, in the processing step (S100), the substrate (W) can be annealed.

[0073] When the processing step (S100) is completed according to the preset recipe, the substrate (W) is transported outside the substrate processing device (1). More specifically, when the processing step (S100) is completed, the substrate (W) is transported outside the first chamber (220) by an external transport means.

[0074] The first section (T1) illustrated in FIG. 3 refers to a section in which a preceding substrate (W) is brought into the substrate processing device (1) to undergo a predetermined process using process plasma. In addition, the second section (T2) may refer to a section in which the preceding substrate (W) is brought out of the substrate processing device (1) but before the subsequent substrate (W) is brought into the substrate processing device (1). In addition, the second section (T2) may refer to a section in which the substrate processing device (1) is in an idle state. The idle state may refer to a state in which the substrate processing device (1) is in a standby state. In addition, the third section (T3) refers to a section in which the subsequent substrate (W) is brought into the substrate processing device (1) to undergo a predetermined process using process plasma.

[0075] The aforementioned processing step (S100) may be performed in the first section (T1) and the third section (T3), and the cleaning step (S200) may be performed in the second section (T2). However, this is only for convenience of understanding, and thus, the cleaning step (S200) according to one embodiment may be performed before the subsequent substrate (W) is introduced into the first chamber (220) after the preceding substrate (W) is processed in the processing step (S100). In addition, the cleaning step (S200) may be performed while the substrate processing device (1) is in an idle state. In addition, the cleaning step (S200) may be performed immediately after the processing step (S100) is performed, but may be additionally performed while the substrate processing device (1) is in an idle state.

[0076] In the cleaning step (S200), a cleaning gas is supplied to the discharge space (422). More specifically, in the cleaning step (S200), oxygen gas (G2-1) and nitrogen gas (G2-2) are supplied to the discharge space (422). The oxygen gas (G2-1) and nitrogen gas (G2-2) supplied to the discharge space (422) are excited into a cleaning plasma by an electric field generated in the discharge space (422). In addition, in the cleaning step (S200), the oxygen gas (G2-1) and nitrogen gas (G2-2) may be supplied to the discharge space (422) simultaneously.

[0077] In the processing step (S100), the substrate (W) is processed using a fluorine-containing gas. The process plasma generated by exciting the fluorine-containing gas interacts with the substrate (W) and simultaneously reacts with the liner (226) provided on the inner wall of the first chamber (220). As described above, the liner (226) is made of a material including aluminum (e.g., aluminum oxide (Al2O3)), and thus can be converted into a particle source by the process plasma generated by exciting the fluorine-containing gas. For example, the particle source may be AlO x F y or AlF xIt may be a compound such as etc. Such a particle source can float in the processing space (222) away from the inner wall of the first chamber (220). The particle source floating in the processing space (222) can attach to the substrate (W). In this case, it is difficult for the preceding substrate (W) currently being processed to be uniformly processed by the process plasma. Furthermore, the particle source floating in the processing space (222) can also fall on the succeeding substrate (W) after the succeeding substrate (W) is brought into the first chamber (220), making it difficult to uniformly process the succeeding substrate (W).

[0078] Accordingly, in the cleaning step (S200) according to one embodiment, the particle source generated in the process of performing the processing step (S100) can be removed by using the cleaning plasma excited with oxygen gas (G2-1) and nitrogen gas (G2-2). More specifically, the cleaning plasma excited with oxygen gas (G2-1) and nitrogen gas (G2-2) can remove the particle source, AlO x F y or AlF x The particle source reacts with compounds such as Al2O3 and is oxidized again into a substance such as Al2O3. In addition, fluorine contained in the particle source is exhausted to the outside of the substrate processing device (1) through the exhaust line (224). Accordingly, the particle source generated inside the substrate processing device (1) during the process of performing the processing step (S100) can be minimized from affecting the substrate (W). In other words, uniform processing can be performed on the preceding substrate (W) and the succeeding substrate (W) in an environment clean from the particle source.

[0079] In addition, the cleaning plasma generated by exciting oxygen gas (G2-1) and nitrogen gas (G2-2) and the particle source containing fluorine can thermodynamically spontaneously react with each other. For example, the Gibbs energy (Gib Free Energy) of NF3O is -96.369 kJ / mol, and the Gibbs energy of NO2F is -66.418 kJ / mol, so the particle source generated during the process of performing the processing step (S100) can be more efficiently removed from the substrate processing device (1) by the cleaning plasma.

[0080] In the cleaning step (S200) according to one embodiment, oxygen gas (G2-1) and nitrogen gas (G2-2) may be supplied to the discharge space (422) at different ratios. More specifically, in the cleaning step (S200), the total amount of oxygen gas (G2-1) supplied to the discharge space (422) may be greater than the total amount of nitrogen gas (G2-2). For example, in the cleaning step (S200), oxygen gas (G2-1) and nitrogen gas (G2-2) may be supplied to the discharge space (422) at a ratio of 8:2. In the cleaning step (S200), the control of the supply ratio of oxygen gas (G2-1) and nitrogen gas (G2-2) can be realized by controlling the amount of oxygen gas flowing through the 2-1 gas line (451) and the amount of nitrogen gas flowing through the 2-2 gas line (455) using the aforementioned 2-1 flow controller (454) and 2-2 flow controller (458).

[0081] FIG. 4 is a graph schematically showing the number of fluorine ions measured on a substrate according to a mixing ratio of nitrogen gas and oxygen gas according to one embodiment.

[0082] Referring to FIG. 4, the inventors measured the number of fluorine ions on the subsequent substrate (W) after performing one cycle of the processing step (S100) and the cleaning step (S200). More specifically, the number of fluorine ions on the substrate (W) was measured by varying the mixing ratio of oxygen gas (G2-1) and nitrogen gas (G2-2) in the cleaning step (S200) performed after the processing step (S100).

[0083] In one experimental example, when the mixing ratio of oxygen gas (G2-1) and nitrogen gas (G2-2) is 8:2, the number of fluorine ions measured on the subsequent substrate (W) is significantly reduced compared to examples of other mixing ratios. For example, when oxygen gas (G2-1) and nitrogen gas (G2-2) are supplied to the discharge space (422) at a ratio of 8:2, the number of fluorine ions measured on the subsequent substrate (W) is reduced compared to when only oxygen gas (G2-1) is supplied to the discharge space (422). That is, when the mixing ratio of oxygen gas (G2-1) and nitrogen gas (G2-2) included in the cleaning gas supplied into the discharge space (422) is 8:2, the number of fluorine ions forming the source of particles on the subsequent substrate (W) is significantly reduced.

[0084] Accordingly, according to one embodiment of the present invention, by supplying a mixture ratio of oxygen gas (G2-1) and nitrogen gas (G2-2) of 8:2 in the cleaning step (S200), a particle source that can act as a contaminant on the subsequent substrate (W) can be efficiently removed from the substrate processing device (1).

[0085] In one embodiment, the processing step (S100) and the cleaning step (S200) may be performed multiple times in one cycle. That is, the processing step (S100) and the cleaning step (S200) may be performed alternately each time each substrate (W) is processed.

[0086] FIG. 5 is a comparative diagram schematically showing the number of particles measured on a substrate according to the number of repetitions of one cycle of a substrate processing method according to one embodiment.

[0087] Referring to FIG. 5, the inventors of the present invention measured the number of particles measured on the subsequent substrate (W) after performing the processing step (S100) and the cleaning step (S200) multiple times in one cycle. Here, the particles may mean fluorine ions.

[0088] In one experiment, the inventors performed the processing step (S100) 80 times under harsh conditions without performing the cleaning step (S200). That is, after processing 80 substrates (W) using process plasma, the number of particles on the 80th substrate (W) was measured. As illustrated in Fig. 5, 3,057 particles were measured on the 80th substrate (W).

[0089] In one experiment, the inventors repeated the cycle of the treatment step (S100) and the cleaning step (S200) 50 times. After performing 50 cycles, the number of particles on the 50th substrate (W) was measured to be 394. In one experiment, the inventors repeated the cycle of the treatment step (S100) and the cleaning step (S200) 100 times, and the number of particles on the 100th substrate (W) was measured to be 50.

[0090] That is, as in the experimental example described above, as one cycle of the processing step (S100) and the cleaning step (S200) was repeatedly performed, the number of particles measured on the substrate (W) was significantly reduced. Accordingly, according to the embodiment of the present invention, the source of particles generated during the process of performing the processing step (S100) can be efficiently removed through the cleaning step (S200). Accordingly, the uniformity of processing between the preceding substrate (W) and the succeeding substrate (W) can be more efficiently secured.

[0091] Hereinafter, a substrate processing method according to another embodiment of the present invention will be described. The substrate processing method described below is performed using mostly the same or similar mechanisms as the substrate processing method described with reference to FIGS. 2 to 5, except where additional explanation is required, and therefore, description of overlapping content will be omitted.

[0092] Figure 6 is a flowchart schematically showing one cycle of a substrate processing method according to another embodiment.

[0093] Referring to FIG. 6, in the cleaning step (S200) according to one embodiment, oxygen gas (G2-1) and nitrogen gas (G2-2) may be alternately supplied to the discharge space (422). That is, while oxygen gas (G2-1) is supplied to the discharge space (422), nitrogen gas (G2-2) may not be supplied to the discharge space (422). Conversely, while nitrogen gas (G2-2) is supplied, oxygen gas (G2-1) may not be supplied.

[0094] In one embodiment, assuming that the flow rates per unit time of oxygen gas (G2-1) and nitrogen gas (G2-2) are the same, the supply time of oxygen gas (G2-1) and the supply time of nitrogen gas (G2-2) can be different. For example, the total supply time of oxygen gas (G2-1) can be four times longer than the total supply time of nitrogen gas (G2-2).

[0095] According to the above-described embodiment, oxygen gas (G2-1) and nitrogen gas (G2-2) are alternately supplied to the discharge space (422), but the supply times of the oxygen gas (G2-1) and nitrogen gas (G2-2) can be varied. Accordingly, the supply ratio of the oxygen gas (G2-1) and nitrogen gas (G2-2) can be adjusted to 8:2 so that the number of particles measured on the substrate (W) can be minimized.

[0096] In contrast, oxygen gas (G2-1) and nitrogen gas (G2-2) can be supplied in pulses to the discharge space (422), respectively. By controlling the number of pulses of oxygen gas (G2-1) and nitrogen gas (G2-2), the supply ratio of oxygen gas (G2-1) and nitrogen gas (G2-2) can be adjusted to 8:2.

[0097] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The above-described embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

[0098] [Explanation of symbols]

[0099] 20: Processing Unit

[0100] 40: Plasma generator

[0101] 60: Diffusion section

[0102] 220: Chamber 1

[0103] 226: Liner

[0104] 420: Second Chamber

[0105] 620: Diffusion Chamber

[0106] 440: First gas supply unit

[0107] 450: Second gas supply unit

[0108] S100: Processing stage

[0109] S200: Cleaning stage

[0110] G1: Process gas

[0111] G2-1: Oxygen gas

[0112] G2-2: Nitrogen gas

Claims

1. In the method of processing the substrate, A processing step for processing a substrate by generating process plasma within a chamber; and A cleaning step for generating a cleaning plasma within the chamber to remove a particle source present within the chamber, The above process plasma is generated by exciting a fluorine-containing gas, A substrate processing method characterized in that the above cleaning plasma is generated by exciting oxygen gas and nitrogen gas.

2. In paragraph 1, A substrate processing method, characterized in that, in the above cleaning step, the ratios of the oxygen gas and the nitrogen gas supplied into the chamber are each different.

3. In paragraph 2, A substrate processing method, characterized in that, during the above cleaning step, the total amount of the oxygen gas supplied into the chamber is greater than the total amount of the nitrogen gas supplied into the chamber.

4. In paragraph 3, A substrate processing method, characterized in that the ratio of the oxygen gas and the nitrogen gas is 8:

2.

5. In paragraph 4, A substrate processing method characterized in that, in the above cleaning step, the oxygen gas and the nitrogen gas are simultaneously supplied into the chamber.

6. In paragraph 4, A substrate processing method characterized in that, in the above cleaning step, the oxygen gas and the nitrogen gas are alternately supplied into the chamber.

7. In paragraph 4, A substrate processing method characterized in that, in the above cleaning step, the oxygen gas and the nitrogen gas are each supplied in pulses into the chamber.

8. In paragraph 1, A substrate processing method, characterized in that the particle source is a material containing aluminum and fluorine.

9. In paragraph 8, A substrate processing method, characterized in that the inner wall of the chamber is lined with a material including the aluminum.

10. In paragraph 1, A substrate processing method characterized in that the cleaning plasma and the particle source react spontaneously.

11. In paragraph 1, A substrate processing method characterized in that the above processing step and the above cleaning step are performed multiple times in one cycle.

12. In paragraph 1, The above cleaning step is, A substrate processing method characterized in that it is performed before a subsequent substrate is brought into the chamber after processing a preceding substrate in the above processing step, or while the chamber is in an idle state.

13. In a device for processing a substrate, A first chamber having a processing space for processing a substrate; A second chamber that generates plasma in the discharge space inside; A gas supply unit that supplies gas excited by the plasma to the discharge space; and Including a controller for controlling the above gas supply unit, The above gas supply unit, A first gas supply unit for supplying fluorine-containing gas to the above discharge space; and It includes a second gas supply unit that supplies oxygen gas and nitrogen gas to the above discharge space, The above controller, After supplying the fluorine-containing gas to the discharge space to generate process plasma in the discharge space and diffusing the process plasma into the processing space to process the substrate in the processing space, A substrate processing device that controls the first gas supply unit and the second gas supply unit to supply the oxygen gas and nitrogen gas to the discharge space to generate a cleaning plasma in the discharge space, and to diffuse the cleaning plasma into the processing space to remove a particle source generated in the first chamber during the process of processing the substrate.

14. In paragraph 13, The above controller, A substrate processing device that controls the first gas supply unit and the second gas supply unit so that the total amount of the oxygen gas supplied to the discharge space is greater than the total amount of the nitrogen gas supplied to the discharge space.

15. In paragraph 14, A substrate processing device characterized in that the ratio of the oxygen gas and the nitrogen gas is 8:

2.

16. In paragraph 13, A substrate processing device, characterized in that the inner wall of the first chamber is lined with a material including aluminum.

17. In paragraph 16, A substrate processing device, characterized in that the particle source is a material containing aluminum and fluorine.

18. In paragraph 13, The above first gas supply unit, a first gas line connected to the first chamber; and A first flow controller is installed in the first gas line and controls the flow rate of the fluorine-containing gas supplied to the discharge space, The above second gas supply unit, A second-1 gas line connected to the first chamber and supplying the oxygen gas to the discharge space; A second-second gas line connected to the first chamber and supplying the nitrogen gas to the discharge space; A 2-1 flow controller installed in the 2-1 gas line to control the flow rate of the oxygen gas supplied to the discharge space; and A substrate processing device including a 2-2 flow controller installed in the 2-2 gas line and controlling the flow rate of the nitrogen gas supplied to the discharge space.

19. In paragraph 13, The device further includes a diffusion chamber disposed between the first chamber and the second chamber to diffuse the plasma generated in the discharge space into the processing space, A substrate processing device characterized in that the above diffusion chamber has a shape in which the width increases from top to bottom.

20. In the method of processing the substrate, A processing step for processing a substrate by diffusing process plasma into a chamber for processing the substrate; and A cleaning step for removing a particle source existing in the chamber by diffusing a cleaning plasma in the chamber, In the above processing step, the substrate is processed using the process plasma generated by exciting the fluorine-containing gas supplied into the chamber, In the above cleaning step, the particle source generated in the chamber in the processing step is removed by using the cleaning plasma generated by exciting the oxygen gas and nitrogen gas supplied into the chamber, The above cleaning step is performed before the subsequent substrate is introduced into the chamber after the preceding substrate is processed in the processing step, or while the chamber is in an idle state. A substrate processing method, characterized in that the ratio of the total amount of the oxygen gas and the total amount of the nitrogen gas supplied into the chamber to generate the cleaning plasma is 8:2.

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