Surface light-emitting element

Abstract

Provided is a surface light-emitting element that makes it possible to improve reliability while suppressing deterioration of element characteristics.　A surface light-emitting element according to the present technology comprises a light-emitting element section including: a first structure; a second structure layered on the first structure; a light-emitting layer provided between the first and second structures; an oxide constriction layer provided in the first structure and / or the second structure; and a distortion compensation layer provided in the first structure and / or the second structure. The distortion compensation layer has the function of suppressing deterioration of element characteristics. The surface light-emitting element according to the present technology makes it possible to improve reliability while suppressing deterioration of element characteristics.

Description

Surface-emitting element

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device and an electronic device.

[0002] 2. Description of the Related Art Conventionally, surface-emitting devices capable of obtaining surface-emitting output, such as surface-emitting lasers and light-emitting diodes, are known.

[0003] Among conventional surface light emitting devices, there are some that have an oxide constriction layer and a strain compensation layer (see, for example, Patent Document 1).

[0004] Japanese Patent Application Laid-Open No. 2004-281969

[0005] However, conventional surface light emitting devices have room for improvement in terms of improving reliability while suppressing deterioration of device characteristics.

[0006] Therefore, a main object of the present technology is to provide a surface light emitting device that can improve reliability while suppressing deterioration of device characteristics.

[0007] The present technology provides a surface-emitting device comprising a light-emitting element portion including: a first structure; a second structure stacked on the first structure; a light-emitting layer provided between the first and second structures; an oxide constriction layer provided in the first structure and / or the second structure; and a strain-compensation layer provided in the first structure and / or the second structure, wherein the strain-compensation layer has a function of suppressing degradation of device characteristics. The oxide constriction layer and the strain-compensation layer may be provided in the first structure, and / or the oxide constriction layer and the strain-compensation layer may be provided in the second structure. When the oxidized constriction layer and the strain compensation layer are provided in the first structure, the strain compensation layer may be arranged in the first structure on the side of the oxidized constriction layer facing the light emitting layer and / or on the opposite side of the oxidized constriction layer facing the light emitting layer, and when the oxidized constriction layer and the strain compensation layer are provided in the second structure, the strain compensation layer may be arranged in the second structure on the side of the oxidized constriction layer facing the light emitting layer and / or on the opposite side of the oxidized constriction layer facing the light emitting layer. When the oxide constriction layer and the strain compensation layer are provided in the first structure, the first structure may be a first substitution structure in which at least one first semiconductor layer of the plurality of first semiconductor layers is replaced with a first strain compensation layer as the strain compensation layer in a first reference structure having the oxide constriction layer and a plurality of first semiconductor layers, which serves as a reference for the element characteristics, and which has the oxide constriction layer and a plurality of first semiconductor layers, and the first strain compensation layer has characteristics similar to those of the first semiconductor layer. When the oxide constriction layer and the strain compensation layer are provided in the second structure, the second structure may be a second substitution structure in which at least one second semiconductor layer of the plurality of second semiconductor layers is replaced with a second strain compensation layer as the strain compensation layer in a second reference structure having the oxide constriction layer and a plurality of second semiconductor layers, which serves as a reference for the element characteristics. When the first structure is the first substitution structure, the first reference structure may include a first semiconductor multilayer reflector having the first semiconductor layer as a refractive index layer, and when the second structure is the second substitution structure, the second reference structure may include a second semiconductor multilayer reflector having the second semiconductor layer as a refractive index layer.When the first structure is the first substitution structure, the first semiconductor layer may be the refractive index layer closest to the oxide constricting layer in the first semiconductor multilayer reflector, and when the second structure is the second substitution structure, the second semiconductor layer may be the refractive index layer closest to the oxide constricting layer in the second semiconductor multilayer reflector. When the first structure is the first substitution structure, the first semiconductor layer may be the high refractive index layer or low refractive index layer closest to the oxide constricting layer in the first semiconductor multilayer reflector, and when the second structure is the second substitution structure, the second semiconductor layer may be the high refractive index layer or low refractive index layer closest to the oxide constricting layer in the second semiconductor multilayer reflector. When the first structure is the first substitution structure, the first reference structure may include a first cladding layer having at least a part of the first semiconductor layer, and when the second structure is the second substitution structure, the second reference structure may include a second cladding layer having at least a part of the second semiconductor layer. When the first structure is the first substitution structure, the first semiconductor layer may be a portion of the first cladding layer on the oxide constriction layer side, and when the second structure is the second substitution structure, the second semiconductor layer may be a portion of the second cladding layer on the oxide constriction layer side. When the first structure is the first substitution structure, the first semiconductor layer and the first strain-compensating layer may have the same optical thickness, and when the second structure is the second substitution structure, the second semiconductor layer and the second strain-compensating layer may have the same optical thickness. When the first structure is the first substitution structure, the first semiconductor layer and the first strain-compensating layer may be semiconductor layers whose transition type does not change, and when the second structure is the second substitution structure, the second semiconductor layer and the second strain-compensating layer may be semiconductor layers whose transition type does not change. When the first structure is the first substitution structure, a band gap difference between the first semiconductor layer and the first strain-compensating layer may be 0.3 eV or less, and when the second structure is the second substitution structure, a band gap difference between the second semiconductor layer and the second strain-compensating layer may be 0.3 eV or less. The strain-compensating layer may have tensile strain. The tensile strain may be 2% or less. The thickness of the strain-compensating layer may be equal to or less than a critical film thickness.The strain compensation layer may have a thickness of 10 nm or more. The strain compensation layer may be made of a compound semiconductor containing at least two of Al, Ga, In, As, and P. The light emitting element section may have a defect portion on the surface on the second structure side. Both the first and second structures may include a reflecting mirror. The element characteristics may be I-L characteristics.

[0008] 1 is a cross-sectional view (part 1) of a surface light-emitting device according to Example 1 of the first embodiment of the present technology. FIG. 2 is a cross-sectional view (part 2) of a surface light-emitting device according to Example 1 of the first embodiment of the present technology. FIG. 3 is a plan view of a surface light-emitting device according to Example 1 of the first embodiment of the present technology. FIG. 4 is a cross-sectional view of a first surface light-emitting device that serves as a reference for element characteristics of surface light-emitting devices according to examples of the first embodiment of the present technology. FIG. 5 is a diagram showing the refractive index and optical field intensity in a resonator of the first surface light-emitting device. FIG. 6 is a diagram showing a time change in relative output of a surface light-emitting device of a comparative sample when a continuous current test is performed on the surface light-emitting device. FIG. 7 is a diagram showing the position of a defect observed in a surface light-emitting device of a comparative sample. FIG. 8 is a flowchart for describing an example of a method for manufacturing a surface light-emitting device according to Example 1 of the first embodiment of the present technology. FIG. 9 is a cross-sectional view of each process of an example of a method for manufacturing a surface light-emitting device according to Example 1 of the first embodiment of the present technology. FIG. 10 is a cross-sectional view of each process of an example of a method for manufacturing a surface light-emitting device according to Example 1 of the first embodiment of the present technology. FIG. 10 is a cross-sectional view of each step of an example of a manufacturing method of a surface light emitting device according to Example 1 of the first embodiment of the present technology. FIG. 11 is a cross-sectional view of each step of an example of a manufacturing method of a surface light emitting device according to Example 1 of the first embodiment of the present technology. FIG. 12 is a cross-sectional view of a surface light emitting device according to Example 2 of the first embodiment of the present technology. FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 3 of the first embodiment of the present technology. FIG. 14 is a cross-sectional view of a surface light emitting device according to Example 4 of the first embodiment of the present technology. FIG. 15 is a cross-sectional view of a surface light emitting device according to Example 1 of the second embodiment of the present technology. FIG. 16 is a cross-sectional view of a surface light emitting device according to Example 2 of the second embodiment of the present technology. FIG. 17 is a cross-sectional view of a surface light emitting device according to Example 1 of the third embodiment of the present technology. FIG. 18 is a cross-sectional view of a surface light emitting device according to Example 2 of the third embodiment of the present technology.10 is a cross-sectional view of a surface light emitting device according to an example of the fourth embodiment of the present technology. FIG. 11 is a cross-sectional view of a fourth surface light emitting device that serves as a reference for element characteristics of surface light emitting devices according to examples of the fourth embodiment of the present technology. FIG. 12 is a cross-sectional view of a surface light emitting device according to example 1 of the fifth embodiment of the present technology. FIG. 13 is a cross-sectional view of a surface light emitting device according to example 2 of the fifth embodiment of the present technology. FIG. 14 is a cross-sectional view of a surface light emitting device according to example 1 of the fifth embodiment of the present technology. FIG. 15 is a cross-sectional view of a surface light emitting device according to example 1 of the fifth embodiment of the present technology. FIG. 16 is a cross-sectional view of a surface light emitting device according to example 1 of the sixth embodiment of the present technology. FIG. 17 is a cross-sectional view of a surface light emitting device according to example 1 of the seventh embodiment of the present technology. FIG. 18 is a plan view of a surface light emitting device according to example 1 of the seventh embodiment of the present technology. FIG. 19 is a cross-sectional view of a seventh surface light emitting device that serves as a reference for element characteristics of surface light emitting devices according to examples of the seventh embodiment of the present technology. FIG. 19 is a cross-sectional view of a surface light emitting device according to example 1 of the eighth embodiment of the present technology. FIG. 19 is a cross-sectional view of an eighth surface light emitting device that serves as a reference for element characteristics of surface light emitting devices according to examples of the eighth embodiment of the present technology. FIG. 19 is a cross-sectional view of a surface light emitting device according to example 2 of the fifth embodiment of the present technology. FIG. 10 is a cross-sectional view of a surface light emitting device according to an example of a tenth embodiment of the present technology. FIG. 11 is a cross-sectional view of a tenth surface light emitting device serving as a reference for element characteristics of surface light emitting devices according to examples of the tenth embodiment of the present technology. FIG. 12 is a cross-sectional view of a surface light emitting device according to an example of an eleventh embodiment of the present technology. FIG. 13 is a cross-sectional view of an eleventh surface light emitting device serving as a reference for element characteristics of surface light emitting devices according to examples of the eleventh embodiment of the present technology. FIG. 14 is a cross-sectional view of a surface light emitting device according to a modified example of example 1 of the second embodiment of the present technology. FIG. 15 is a cross-sectional view of a surface light emitting device according to a modified example of example 1 of the fourth embodiment of the present technology. FIG. 16 is a diagram illustrating an example application of a surface light emitting device according to example 1 of an embodiment of the present technology to a distance measurement device. FIG. 17 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. FIG. 18 is an explanatory diagram illustrating an example of an installation position of a distance measurement device.

[0009] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below illustrate typical embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly. Even when it is described in this specification that a surface light emitting device according to the present technology has multiple effects, it is sufficient that the surface light emitting device according to the present technology has at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0010] The description will be made in the following order: 0. Introduction 1. Surface light emitting device according to Example 1 of the first embodiment of the present technology 2. Surface light emitting device according to Example 2 of the first embodiment of the present technology 3. Surface light emitting device according to Example 3 of the first embodiment of the present technology 4. Surface light emitting device according to Example 4 of the first embodiment of the present technology 5. Surface light emitting device according to Example 1 of the second embodiment of the present technology 6. Surface light emitting device according to Example 2 of the second embodiment of the present technology 7. Surface light emitting device according to Example 1 of the third embodiment of the present technology 8. Surface light emitting device according to Example 2 of the third embodiment of the present technology 9. Surface light emitting device according to Example 3 of the third embodiment of the present technology 10. Surface light emitting device according to Example 4 of the third embodiment of the present technology 11. Surface light emitting device according to an example of the fourth embodiment of the present technology 12. Surface light emitting device according to Example 1 of the fifth embodiment of the present technology 13. Surface light emitting device according to Example 2 of the fifth embodiment of the present technology 14. Surface light emitting device according to an example of the sixth embodiment of the present technology 15. Surface light emitting device according to an example of the seventh embodiment of the present technology 16. Surface light emitting device according to an example of the eighth embodiment of the present technology 17. 18. Surface light emitting device according to an example of the ninth embodiment of the present technology 19. Surface light emitting device according to an example of the tenth embodiment of the present technology 20. Modification of the present technology 21. Application example to electronic devices 22. Example of application of surface light emitting device to distance measurement device 23. Example of application of distance measurement device to a moving body

[0011] <0. Introduction>

[0012] In conventional surface-emitting devices (e.g., surface-emitting lasers, light-emitting diodes, etc.) in which an oxidized constriction layer, in which a non-oxidized region is surrounded by an oxidized region, and multiple semiconductor layers are stacked one on top of the other, the oxidized layer, which is the material for the oxidized constriction layer, shrinks in volume due to oxidation when the oxidized constriction layer is formed, which can introduce strain, point defects, and dislocations between the non-oxidized semiconductor layer and the oxidized constriction layer. When the surface-emitting device is powered on, current tends to concentrate near the outer periphery of the non-oxidized region of the oxidized constriction layer, i.e., near the inner periphery of the oxidized region. As a result, light emission also tends to concentrate near the inner periphery of the oxidized region. Because the oxidized region is distorted by shrinking due to oxidation, the surrounding semiconductor layer is subjected to compressive strain. The compressively strained semiconductor layer has a narrower band gap, making it more susceptible to light absorption. As a result, defects are generated in the semiconductor layer due to heat generation, and the defects continue to grow. In other words, strain generated in the oxidized constriction layer can cause reliability degradation.

[0013] The above content is explained, for example, in "3.2 Oxide layer" in the paper (Yuqi Zhang, "Analysis of common failure causes in oxide VCSELs," Proceedings of SPIE Vol. 12164, 12164 1H-2). Figure 2 shows the occurrence of defects around the oxide confinement layer.

[0014] In order to suppress deterioration of reliability due to strain occurring in the oxidized constriction layer, it has been proposed, for example, in Patent Document 1, to provide a strain compensation layer that compensates for strain in the oxidized constriction layer.

[0015] However, for example, in Patent Document 1, the band gap and refractive index of the strain compensation layer are not sufficiently considered, and the insertion of the strain compensation layer may deteriorate the characteristics (device characteristics) of the surface-emitting device. In other words, providing a strain compensation layer to improve reliability may lead to deterioration of the device characteristics.

[0016] Therefore, after extensive research, the inventors came up with the idea of ​​improving reliability while suppressing deterioration of device characteristics by providing a strain compensation layer provided in a surface-emitting device having an oxide constriction layer with a function of suppressing deterioration of device characteristics, which is a novel finding of the inventors.

[0017] The inventors have developed a surface light emitting device according to the present technology as a surface light emitting device that embodies this new finding.

[0018] Hereinafter, examples of the surface light emitting device according to each embodiment of the present technology will be described in detail with reference to the drawings. In the following, in cross-sectional views such as FIG. 1 , the upper side will be referred to as “upper” and the lower side will be referred to as “lower” as appropriate.

[0019] <1. Surface light emitting device according to example 1 of first embodiment of the present technology> Fig. 1 is a cross-sectional view (part 1) of a surface light emitting device 10-1 according to example 1 of the first embodiment of the present technology. Fig. 2 is a cross-sectional view (part 2) of the surface light emitting device 10-1 according to example 1 of the first embodiment of the present technology. Fig. 3 is a plan view of the surface light emitting device 10-1 according to example 1 of the first embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 3. Fig. 2 is a cross-sectional view taken along line 2-2 in Fig. 3.

[0020] <Configuration of Surface Light Emitting Device> (Overall Configuration) A surface light emitting device 10-1 according to Example 1 of the first embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Figures 1 to 3. The surface light emitting device 10-1 is, for example, a surface emission type VCSEL.

[0021] The surface light emitting element 10-1 is driven by, for example, a driver (drive circuit) that includes, for example, a power supply and a transistor that turns on and off the power supply to the surface light emitting element 10-1.

[0022] The surface light emitting element 10-1 includes, for example, a light emitting element unit LE.

[0023] As an example, the light-emitting element section LE includes a first structure ST1, a second structure ST2 stacked on the first structure ST1, a light-emitting layer 105 provided between the first and second structures ST1 and ST2, an oxide constriction layer 107 provided in the second structure ST2, and a strain compensation layer 115 provided in the second structure ST2. As will be described in detail later, the strain compensation layer 115 has the function of suppressing deterioration of the element characteristics, which are the characteristics of the surface-emitting element 10-1. Hereinafter, the direction in which the first and second structures ST1 and ST2 are stacked (the vertical direction) will also be referred to as the "stacking direction."

[0024] The first structure ST1 includes, for example, a first cladding layer 104, a first semiconductor multilayer reflector 103, a buffer layer 102, and a substrate 101 in this order from the light emitting layer 105 side (upper side).

[0025] As an example, the second structure ST2 includes, in this order from the light emitting layer 105 side (bottom side), a second cladding layer 106 having a conductivity type different from that of the first cladding layer 104, a second semiconductor multilayer film reflector 108 having an oxide constriction layer 107 and a strain compensation layer 115 disposed therein, and a contact layer 109. That is, the oxide constriction layer 107 and the strain compensation layer 115 are provided in the second structure ST2, and the strain compensation layer 115 is disposed on the light emitting layer 105 side of the oxide constriction layer 107 in the second structure ST2.

[0026] The oxide constriction layer 107 defines a light emitting area LA of the light emitting layer 105. The light emitting area LA is an area in the light emitting layer 105 into which a current is injected (current injection area) and which emits light.

[0027] As described above, in the surface-emitting device 10-1, as an example, a buffer layer 102, a first semiconductor multilayer reflector 103, a first cladding layer 104, an emission layer 105, a second cladding layer 106, a second semiconductor multilayer reflector 108 having an oxide constriction layer 107 and a strain compensation layer 115 disposed therein, and a contact layer 109 are stacked in this order on a substrate 101.

[0028] In the surface-emitting device 10-1, the light-emitting layer 105 has a double heterostructure sandwiched in the stacking direction between first and second clad layers 104 and 106 of different conductivity types, and holes and electrons can be radiatively recombined (radiatively recombined) in the light-emitting layer 105.

[0029] In the surface-emitting device 10-1, a resonator is configured including a light-emitting layer 105 and first and second semiconductor multilayer film reflectors 103 and 108 that sandwich the light-emitting layer 105 in the stacking direction. The surface-emitting device 10-1 emits laser light to the side of the second structure ST2 opposite to the light-emitting layer 105 side (the surface side (upper surface side) of the substrate 101).

[0030] The resonator of the surface-emitting device 10-1 has, for example, a λ / 2 cavity structure with a resonator length of λ / 2, which is advantageous for high-speed modulation operation. The λ / 2 cavity structure is reported, for example, in the following literature: A. Mutig and D. Bimberg, "Progress on High-Speed ​​980 nm VCSELs for Short-Reach Optical Interconnects," Advances in Optical Technologies, vol. 2011, article ID 290508.

[0031] As an example, a recess is provided on the surface of the light-emitting element portion LE on the side of the second structure ST2. Here, the recess is a notch or groove that defines a mesa structure MS. As an example, the mesa structure MS includes a first cladding layer 104, a light-emitting layer 105, a second cladding layer 106, an oxide constriction layer 107, a strain compensation layer 115, a second semiconductor multilayer film reflector 108, and a contact layer 109.

[0032] The mesa structure MS is also called a "light-emitting mesa." Here, the light-emitting mesa has an elliptical shape in plan view (see FIG. 3), but it may have other shapes such as a circle or a polygon. The major and minor axes of the light-emitting mesa are, for example, several tens of μm (e.g., 10 μm to 40 μm).

[0033] A circumferential (e.g., ring-shaped) anode electrode 111 (p-side electrode) is provided on the mesa structure MS (more specifically, on the contact layer 109) so as to surround the light-emitting region LA of the light-emitting layer 105 in plan view. The inner diameter side of the anode electrode 111 serves as an emission opening.

[0034] As an example, the mesa structure MS and the region of the first semiconductor multilayer film reflector 103 surrounding the mesa structure MS are covered with an insulating film 110. The insulating film 110 exposes the anode electrode 111. An anode wiring 112 is provided on the insulating film 110 so as to be in contact with the anode electrode 111. The anode wiring 112 is not provided on the insulating film 110 on the inner diameter side of the anode electrode 111. Note that the recessed portion may be filled with an insulating material with a low dielectric constant, such as BCB (benzocyclobutene) or polyimide, and the anode wiring 111 may be extended on the insulating material.

[0035] As an example, a solid cathode electrode 113 (n-side electrode) is provided on the rear surface (lower surface) of the substrate 101 .

[0036] As an example, the surface light emitting element 10-1 is mounted on a mounting substrate (for example, a drive substrate having a driver, a wiring substrate connected to the driver, etc.) with the junction facing up.

[0037] (Substrate) The substrate 101 is, for example, a GaAs substrate (for example, an n-GaAs substrate).

[0038] (Buffer Layer) The buffer layer 102 is made of, for example, a non-doped compound semiconductor (e.g., AlGaAs). Depending on the type of substrate 101 and the vertical structure design, the buffer layer 102 may be made of a compound semiconductor (e.g., n-AlGaAs) doped with n-type impurities (e.g., Si) or a compound semiconductor (e.g., p-AlGaAs) doped with p-type impurities (e.g., C, Zn).

[0039] (First Semiconductor Multilayer Reflector) The first semiconductor multilayer reflector 103 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with n-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The first semiconductor multilayer reflector 103 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the emission wavelength of the light-emitting layer 105, with a composition-graded layer (a compound semiconductor layer containing Al (e.g., an AlGaAs layer)) interposed therebetween. The low-refractive index layer is made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layer is made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layer is a high-Al composition layer with a higher Al composition than the high-refractive index layer. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layer and the low-refractive index layer be as large as possible. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low-refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high-refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of n-type impurities (n-type dopants) in the first semiconductor multilayer film reflector 103 include Si, Se, and Ge. The first semiconductor multilayer film reflector 103 is set to have a slightly higher reflectivity than the second semiconductor multilayer film reflector 108.

[0040] (First Cladding Layer) The first cladding layer 104 is made of n-AlGaAs, for example. The "cladding layer" is also called a "spacer layer." The Al composition of the first cladding layer 104 is, for example, 0.4.

[0041] (Light-Emitting Layer) The light-emitting layer 105 is made of, for example, a compound semiconductor having a smaller band gap energy than the first and second cladding layers 104 and 106. The light-emitting layer 105 is made of, for example, a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The light-emitting layer 105 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The light-emitting layer 105 has an emission wavelength set to, for example, about 600 to 1100 nm. The light-emitting layer 105 is also called an "active layer." The light-emitting layer 105 is preferably disposed at or near an antinode of a standing wave generated in the resonator.

[0042] (Second Cladding Layer) The second cladding layer 106 is made of, for example, p-AlGaAs. The "cladding layer" is also called a "spacer layer." The Al composition of the second cladding layer 106 is, for example, 0.4.

[0043] (Second Semiconductor Multilayer Reflector) The second semiconductor multilayer reflector 108 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with p-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The second semiconductor multilayer reflector 108 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the emission wavelength of the light-emitting layer 105, with a composition-graded layer (a compound semiconductor layer containing Al (e.g., an AlGaAs layer)) interposed therebetween. The low-refractive index layer is made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layer is made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layer is a high-Al composition layer with a higher Al composition than the high-refractive index layer. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layer and the low-refractive index layer is large. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low-refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high-refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of p-type impurities (p-type dopants) in the second semiconductor multilayer film reflector 108 include Zn, Mg, Be, and C.

[0044] (Contact Layer) The contact layer 109 is, for example, a highly doped layer (e.g., a p-GaAs layer) that has high carrier conductivity and is doped with a high concentration of p-type impurities (p-type dopants), such as Zn, Mg, Be, and C.

[0045] (Insulating Film) The insulating film 110 is made of a dielectric material such as SiN, SiO2, or SiON.

[0046] (Anode Electrode) The anode electrode 111 may have a single-layer structure or a laminated structure. The anode electrode 111 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode electrode 111 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd. The anode electrode 111 is electrically connected to the anode side of the driver.

[0047] (Anode Wiring) The anode wiring 112 is made of plating containing, for example, Au, Ag, Cu, or the like.

[0048] (Cathode Electrode) The cathode electrode 113 may have a single-layer structure or a laminated structure. The cathode electrode 113 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the cathode electrode 113 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like. The cathode electrode 113 is electrically connected to the cathode side of the driver.

[0049] (Oxidized Constriction Layer) The oxidized constriction layer 107 has, for example, a non-oxidized region 107 a and an oxidized region 107 b (insulating region) surrounding the non-oxidized region 107 a. The oxidized constriction layer 107 is preferably disposed at or near a node of a standing wave generated in the resonator.

[0050] The non-oxidized region 107a corresponds to the light-emitting region LA and functions as a current / light passing region. The non-oxidized region 107a includes, for example, an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The Al composition of the non-oxidized region 107a is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0051] The oxidized region 107b is, for example, a circular (here, elliptical ring) region in plan view that surrounds the non-oxidized region 107a. The oxidized region 107b has a higher resistance and a lower refractive index than the non-oxidized region 107a, and functions as a current / light confinement region. For example, the oxidized region 107b is made of an oxide containing Al (e.g., Al x O y etc.)

[0052] The non-oxidized region 107a has a shape in plan view (here, an ellipse) that follows the shape in plan view of the mesa structure MS.

[0053] In the surface light emitting device 10-1, the shape anisotropy of the non-oxidized region 107a and the oxidized region 107b contributes to polarization controllability.

[0054] (Strain Compensation Layer) As described above, the strain compensation layer 115 has the function of suppressing deterioration of the element characteristics. Here, the "element characteristics" refer to characteristics that indicate element performance, such as the IL characteristics (current-light output characteristics).

[0055] Fig. 4 is a cross-sectional view of a first surface light emitting element 10 serving as a reference for element characteristics of surface light emitting elements according to examples of the first embodiment of the present technology. Fig. 5 is a diagram showing the refractive index and optical field intensity within the resonator of the first surface light emitting element 10.

[0056] 4, the first surface-emitting element 10 has a configuration in which the strain-compensating layer 115 in the surface-emitting element 10-1 is replaced with a semiconductor layer (second semiconductor layer) that does not have a strain-compensating function. Conversely, the surface-emitting element 10-1 has a configuration in which the semiconductor layer (second semiconductor layer) that does not have a strain-compensating function in the first surface-emitting element 10 is replaced with the strain-compensating layer 115 (see FIGS. 1 and 2).

[0057] In the first surface-emitting element 10, the structure corresponding to the first structure ST1 of the surface-emitting element 10-1 is called the first reference structure RS1, and the structure corresponding to the second structure ST2 is called the second reference structure RS2. Here, the second reference structure RS2 has an oxide constriction layer 107 and a plurality of second semiconductor layers that serve as a reference for element characteristics.

[0058] In the surface-emitting device 10-1, the second structure ST2 is a second replacement structure in which at least one second semiconductor layer (for example, one second semiconductor layer) among the plurality of second semiconductor layers (for example, the second cladding layer 106, the plurality of refractive index layers of the second semiconductor multilayer reflector 108, and the contact layer 109) in the second reference structure RS2 is replaced with a strain compensation layer 115 (second strain compensation layer). The strain compensation layer 115 has characteristics similar to those of the second semiconductor layer. This means that the surface-emitting device 10-1 has a refractive index and optical field strength similar to those in the resonator of the first surface-emitting device 10 shown in FIG. 5. This is synonymous with suppressing deterioration of the device characteristics even if the second semiconductor layer is replaced with the strain compensation layer 115 (the same applies below).

[0059] The second reference structure RS2 includes a second semiconductor multilayer reflector 108 having the second semiconductor layer as a refractive index layer. As an example, the second semiconductor layer is high refractive index layer 108H (hereinafter also referred to as the "lower-side nearest high refractive index layer") that is closest to oxidized constricting layer 107 among the high refractive index layers below (on the light emitting layer 105 side of) oxidized constricting layer 107 in second semiconductor multilayer reflector 108. Here, low refractive index layers 108L and high refractive index layers 108H are alternately arranged in this order from the oxidized constricting layer 107 side to the light emitting layer 105 side of oxidized constricting layer 107 in second semiconductor multilayer reflector 108.

[0060] Here, the second semiconductor layers closer to the oxide constriction layer 107 are more likely to generate compressive strain due to contraction of the oxide constriction layer 107. Therefore, the surface-emitting element 10-1 has a configuration in which the lower-most high-refractive-index layer of the first surface-emitting element 10 is replaced with a strain-compensating layer 115 in order to minimize the generation of compressive strain, particularly in layers below the oxide constriction layer 107 (for example, the refractive index layer below the oxide constriction layer 107, the second cladding layer 106, and the light-emitting layer 105 of the second semiconductor multilayer film reflector 108).

[0061] The lower-most proximate high refractive index layer serving as the second semiconductor layer and the strain compensation layer 115 serving as the second strain compensation layer have the same optical thickness (refractive index×thickness).

[0062] Here, among the non-oxidized region 107a, the high refractive index layer 108H, and the low refractive index layer 108L of the oxidized constriction layer 107, the non-oxidized region 107a has the highest Al composition (lowest refractive index), and the high refractive index layer 108H has the lowest Al composition (highest refractive index).

[0063] The lower-nearest high-refractive-index layer serving as the second semiconductor layer and the strain-compensation layer 115 serving as the second strain-compensation layer have the same transition type. Here, the lower-nearest high-refractive-index layer is made of a direct-gap semiconductor such as AlGaAs, and the strain-compensation layer 115 is made of a direct-gap semiconductor such as GaAsP, AlGaAsP, or InGaAsP.

[0064] The band gap difference between the lower-most-proximate high-refractive index layer as the second semiconductor layer and the strain-compensating layer 115 as the second strain-compensating layer is preferably 0.3 eV or less, more preferably 0.2 eV or less, and still more preferably 0.1 eV or less, which can prevent the strain-compensating layer 115 from interfering with the flow of current.

[0065] The strain-compensating layer 115 has a tensile strain. More specifically, the strain-compensating layer 115 has a tensile strain relative to the lower, nearest high refractive index layer. The strain-compensating layer 115 has a function of substantially canceling out the compressive strain caused by the contraction of the oxidized region 107 b of the oxidized constriction layer 107.

[0066] The tensile strain is preferably 2% or less, and more preferably 1% or less, because it is known that the compressive strain is several percent or less, and it is desirable that the tensile strain be a value necessary and sufficient to offset the compressive strain (not an excessive value).

[0067] The thickness of the strain compensation layer 115 is preferably 10 nm or more, more preferably 20 nm or more, still more preferably 30 nm or more, still more preferably 40 nm or more, and still more preferably 50 nm or more, in order to ensure the effectiveness of the strain compensation function of the strain compensation layer 115.

[0068] The thickness of the strain compensation layer 115 is preferably equal to or less than the critical film thickness in order to prevent dislocations from occurring due to lattice mismatch caused by the strain compensation layer 115.

[0069] The strain compensation layer 115 is preferably made of a compound semiconductor containing at least two of Al, Ga, In, As, and P. As described above, the strain compensation layer 115 is preferably made of a direct transition semiconductor such as GaAsP, AlGaAsP, or InGaAsP.

[0070] For example, the high refractive index layer of the second semiconductor multilayer film reflector 108 is made of Al 0.1 GaAs layer, low refractive index layer is Al 0.9 In the case of a GaAs layer, GaAsP having tensile strain is used as the strain compensation layer 115 in the surface light emitting device 10-1. 0.15 The layer is the lower most adjacent high refractive index layer (Al 0.1 In this case, tensile strain can be introduced due to lattice mismatch with the substrate 101 (GaAs substrate). 0.15 is -0.54%, and Al 0.1 The refractive index of GaAs is +0.01%. 0.15 is 3.258, and Al 0.1 The refractive index difference between the two is small, so the optical path length difference is also small. The band gap is 0.15 is 1.56 eV, and Al 0.1 The band gap difference between the two is small, so the flow of carriers is not impeded.

[0071] Fig. 6 is a diagram showing the change over time in relative output of a surface light emitting device of a comparative sample when the surface light emitting device was subjected to a continuous current test, and Fig. 7 is a diagram showing the location of defects observed in the surface light emitting device of the comparative sample.

[0072] When a continuous current test was carried out on a comparative sample obtained by manufacturing the first surface light emitting device 10, a decrease in output was confirmed before a predetermined time had elapsed, as shown in FIG.

[0073] As shown in FIG. 7 , in the comparative sample, defects (more specifically, dislocations) were present in three layers (the high-refractive-index layer closest to oxidized constriction layer 107 among the high-refractive-index layers above oxidized constriction layer 107 (hereinafter also referred to as the “upper-closest high-refractive-index layer”), the lower-closest high-refractive-index layer, and the light-emitting layer), which were the cause of the significant decrease in output during current application.

[0074] <Operation of the Surface-Emitting Device> The operation of the surface-emitting device 10-1 will now be described with reference to FIG. 1. When a power supply voltage of the driver is applied between the anode electrode 111 and the cathode electrode 113, a current flows from the anode side of the driver to the light-emitting element unit LE via the anode electrode 111. The current flowing into the light-emitting element unit LE passes through the contact layer 109 and the upper part of the second semiconductor multilayer film reflector 108, in this order, is constricted by the oxide constriction layer 107, and is injected into the light-emitting region LA of the light-emitting layer 105 via the lower part of the second semiconductor multilayer film reflector 108, in which the strain compensation layer 115 is disposed, and the second cladding layer 106. At this time, the light-emitting region LA emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 103 and 108, being constricted by the oxide constriction layer 107 and amplified by the light-emitting layer 105. When the oscillation conditions are satisfied, the light is emitted as laser light from the surface (top surface) of the light-emitting element unit LE on the second structure ST2 side. The current injected into the light-emitting area LA flows out to the cathode side of the driver via the first cladding layer 104, the first semiconductor multilayer reflector 103, the buffer layer 102, the substrate 101 and the cathode electrode 113 in this order.

[0075] <<Method of Manufacturing Surface Light Emitting Device>> An example of a method of manufacturing the surface light emitting device 10-1 will be described below with reference to the flowchart in Fig. 8. The overall flow is as follows: first, by a semiconductor manufacturing method using semiconductor manufacturing equipment, a plurality of surface light emitting devices 10-1 are simultaneously produced on a single wafer (hereinafter referred to as "substrate 101" for convenience) which is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10-1 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10-1.

[0076] In the first step S1, a stack is produced (see FIG. 9 ). Specifically, a buffer layer 102, a first semiconductor multilayer reflector 103, a first cladding layer 104, an emission layer 105, a second cladding layer 106, a strain compensation layer 115, a second semiconductor multilayer reflector 108 having an oxidized layer 107S disposed therein, and a contact layer 109 are stacked in this order on a substrate 101 as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition) to produce a stack L. The oxidized layer 107S is a layer (e.g., an AlAs layer or an AlGaAs layer) that will be the material of the oxidized constriction layer 107. When producing the laminate L, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH) gas are used as raw materials for the compound semiconductor, disilane (SiH) is used as a raw material for the donor impurity, and carbon tetrabromide (CBr) is used as a raw material for the acceptor impurity.

[0077] In the next step S2, the mesa M is formed (see FIG. 10). Specifically, first, a resist pattern for forming the mesa M is formed on the stacked body by photolithography. Next, the stacked body is etched by, for example, dry etching using the resist pattern as a mask. This etching is continued until at least the side surface of the oxidized layer 107S is exposed (for example, until the top surface of the first semiconductor multilayer film reflector 103 is exposed). As a result, the mesa M is formed. After that, the resist pattern is removed.

[0078] In the next step S3, the oxidized constriction layer 107 is formed (see FIG. 11 ). Specifically, the mesa M (see FIG. 10 ) formed in the stack is exposed to a high-temperature water vapor atmosphere to selectively oxidize the oxidized layer 107S from the side. As a result, the oxidized constriction layer 107 is formed, in which the non-oxidized region 107a is surrounded by the oxidized region 107b. At this time, compressive strain that may occur in the second semiconductor multilayer film reflector 108 and the light-emitting layer 105 due to contraction caused by oxidation of the oxidized layer 107S is effectively suppressed by the tensile strain of the strain-compensating layer 115.

[0079] In the next step S4, the anode electrode 111 is formed (see FIG. 12 ). Specifically, the anode electrode 111 is formed in a circumferential shape (for example, an elliptical ring shape) on the contact layer 109 of the light-emitting element portion LE so as to surround the light-emitting region in a planar view, for example, by a lift-off method. At this time, deposition, sputtering, or the like is used to form a film of the electrode material.

[0080] In the next step S5, the insulating film 110 is formed (see FIG. 13). Specifically, first, the insulating film 110 is formed on the entire surface. Next, the insulating film 110 on the anode electrode 111 is removed by photolithography and etching to expose the anode electrode 111.

[0081] In the next step S6, the anode wiring 112 is formed (see FIG. 14). Specifically, the anode wiring 112 is formed by, for example, plating so as to be in contact with the anode electrode 111 and to expose the insulating film 110 on the inner diameter side of the anode electrode 111. Prior to plating, it is preferable to form a seed layer in advance in the area to be plated.

[0082] In the final step S7, the cathode electrode 113 is formed (see FIG. 15). Specifically, the rear surface (lower surface) of the substrate 101 is polished to an overall thickness of, for example, about 100 μm, and then the cathode electrode 113 is formed solidly on the rear surface (lower surface) of the substrate 101. At this time, the electrode material is deposited by, for example, vapor deposition, sputtering, or the like.

[0083] <Effects of the Surface Light Emitting Device> The effects of the surface light emitting device 10-1 will be described below.

[0084] The surface-emitting element 10-1 comprises a light-emitting element section LE including a first structure ST1, a second structure ST2 stacked on the first structure ST1, a light-emitting layer 105 provided between the first and second structures ST1 and ST2, an oxide constriction layer 107 provided in the second structure ST2, and a strain compensation layer 115 provided in the second structure ST2, and the strain compensation layer 115 has the function of suppressing deterioration of the element characteristics.

[0085] According to the surface light emitting device 10-1, the strain compensation layer 115 has a function of suppressing deterioration of the device characteristics in addition to the original strain compensation function, so that it is possible to improve reliability while suppressing deterioration of the device characteristics.

[0086] Specifically, the surface light emitting element 10-1 can have the same element characteristics as the first surface light emitting element 10 while improving reliability.

[0087] 2. Surface Light Emitting Device According to Example 2 of First Embodiment of the Present Technology> FIG. 16 is a cross-sectional view of a surface light emitting device 10-2 according to Example 2 of the first embodiment of the present technology.

[0088] As shown in Figure 16, the surface-emitting element 10-2 has a configuration in which the low-refractive index layer 108L, which is the refractive index layer (lower-side closest refractive index layer) closest to the oxidized constriction layer 107 among the refractive index layers below the oxidized constriction layer 107 in the first surface-emitting element 10 (see Figure 4), has been replaced with a strain compensation layer 115 whose characteristics are similar to those of the low-refractive index layer 108L.

[0089] According to the surface light emitting device 10-2, substantially the same effects as those of the surface light emitting device 10-1 according to the first embodiment can be obtained.

[0090] 3. Surface Light Emitting Device According to Example 3 of First Embodiment of Present Technology> FIG. 17 is a cross-sectional view of a surface light emitting device 10-3 according to Example 3 of the first embodiment of the present technology.

[0091] As shown in Figure 17, the surface-emitting element 10-3 has a configuration in which the high-refractive index layer 108H (upper-closest high-refractive index layer), which is the refractive index layer (upper-closest refractive index layer) closest to the oxidized constriction layer 107 among the refractive index layers above the oxidized constriction layer 107 in the first surface-emitting element 10 (see Figure 4), is replaced with a strain compensation layer 115 whose characteristics are similar to those of the high-refractive index layer 108H.

[0092] The surface-emitting device 10-3 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in the layers above the oxide constriction layer 107 (for example, the refractive index layer above the oxide constriction layer 107 of the second semiconductor multilayer film reflector 108, the contact layer 109, etc.).

[0093] 4. Surface Light Emitting Device According to Example 4 of First Embodiment of the Present Technology> FIG. 18 is a cross-sectional view of a surface light emitting device 10-4 according to Example 4 of the first embodiment of the present technology.

[0094] As shown in Figure 18, the surface-emitting element 10-4 has a configuration in which the lower-nearest high-refractive-index layer in the first surface-emitting element 10 (see Figure 4) is replaced with a strain compensation layer 115 whose characteristics are similar to those of the lower-nearest high-refractive-index layer, and the upper-nearest high-refractive-index layer is replaced with a strain compensation layer 115 whose characteristics are similar to those of the upper-nearest high-refractive-index layer.

[0095] The surface-emitting device 10-4 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain in the layers below and above the oxide constriction layer 107 (for example, the refractive index layers below and above the oxide constriction layer 107 of the second semiconductor multilayer film reflector 108, the second cladding layer 106, the light-emitting layer 105, the contact layer 109, etc.).

[0096] 19 is a cross-sectional view of a surface light emitting device 20-1 according to Example 1 of the second embodiment of the present technology. Fig. 20 is a cross-sectional view of a second surface light emitting device 20 serving as a reference for element characteristics of surface light emitting devices according to each Example of the second embodiment of the present technology.

[0097] The second surface-emitting element 20 has a configuration similar to that of the first surface-emitting element 10, except that an oxide constriction layer 107 is disposed between the second cladding layer 106 and the second semiconductor multilayer film reflector 108, as shown in FIG.

[0098] As shown in FIG. 19, the surface light emitting device 20-1 has a configuration in which the second cladding layer 106 in the second surface light emitting device 20 is replaced with a strain compensation layer 115 whose characteristics are similar to those of the second cladding layer 106.

[0099] The surface-emitting device 20-1 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in the layers below the oxidized constriction layer 107 (e.g., the light-emitting layer 105, the first cladding layer 104, and each refractive index layer of the first semiconductor multilayer film reflector 103).

[0100] 6. Surface Light Emitting Device According to Example 2 of Second Embodiment of the Present Technology> FIG. 20 is a cross-sectional view of a surface light emitting device 20-2 according to Example 2 of the second embodiment of the present technology.

[0101] As shown in Figure 20, the surface-emitting element 20-2 has a configuration similar to that of the surface-emitting element 20-1 of Example 1, except that in the second surface-emitting element 20 (see Figure 20), the upper-neighboring high-refractive-index layer is also replaced with a strain compensation layer 115 whose characteristics are similar to those of the upper-neighboring high-refractive-index layer.

[0102] The surface-emitting device 20-2 can achieve substantially the same effects as the surface-emitting device 20-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain in the layers below and above the oxide constriction layer 107 (for example, the refractive index layer above the oxide constriction layer 107 of the second semiconductor multilayer film reflector 108, the second cladding layer 106, the light-emitting layer 105, the first cladding layer 104, the contact layer 109, etc.).

[0103] 22 is a cross-sectional view of a surface light emitting device 30-1 according to Example 1 of the third embodiment of the present technology. Fig. 23 is a cross-sectional view of a third surface light emitting device 30 serving as a reference for element characteristics of surface light emitting devices according to examples of the third embodiment of the present technology.

[0104] As shown in FIG. 23, the third surface light emitting element 30 has the same configuration as the first surface light emitting element 10 except that the oxide constriction layer 107 is disposed inside the first semiconductor multilayer film reflector 103 .

[0105] As shown in FIG. 22 , the surface-emitting element 30-1 has a configuration in which, of the high-refractive index layers above the oxidized constriction layer 107 (on the light-emitting layer 105 side) of the first semiconductor multilayer film reflector 103 in the third surface-emitting element 20, the high-refractive index layer 108H (the upper-most high-refractive index layer) closest to the oxidized constriction layer 107 is replaced with a strain compensation layer 115 whose characteristics are similar to those of the high-refractive index layer 108H.

[0106] The surface-emitting device 30-1 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in the layers above the oxidized constriction layer 107 (e.g., the first cladding layer 104, the light-emitting layer 105, the second cladding layer 106, and the refractive index layers of the second semiconductor multilayer film reflector 108).

[0107] 8. Surface Light Emitting Device According to Example 2 of Third Embodiment of the Present Technology> FIG. 24 is a cross-sectional view of a surface light emitting device 30-2 according to Example 2 of the third embodiment of the present technology.

[0108] As shown in Figure 24, the surface-emitting element 30-2 has a configuration in which, in the third surface-emitting element 20 (see Figure 23), the low-refractive index layer 108L, which is the refractive index layer closest to the oxidized constriction layer 107 (upper-side closest refractive index layer) among the refractive index layers above the oxidized constriction layer 107 (on the light-emitting layer 105 side) of the first semiconductor multilayer film reflector 103, has been replaced with a strain compensation layer 115 whose characteristics are similar to those of the low-refractive index layer 108L.

[0109] The surface-emitting device 30-2 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in the layers above the oxide constriction layer 107 (e.g., the refractive index layers of the first semiconductor multilayer reflector 103, the first cladding layer 104, the light-emitting layer 105, the second cladding layer 106, and the refractive index layers of the second semiconductor multilayer reflector 108).

[0110] 9. Surface Light Emitting Device According to Example 3 of Third Embodiment of the Present Technology FIG. 25 is a cross-sectional view of a surface light emitting device 30-3 according to Example 3 of the third embodiment of the present technology.

[0111] As shown in Figure 25, the surface-emitting element 30-3 has a configuration in which, in the third surface-emitting element 20 (see Figure 23), of the first semiconductor multilayer film reflector 103, among the high-refractive index layers below the oxidized constriction layer 107 (on the opposite side to the light-emitting layer 105 side), the high-refractive index layer 108H (lower-side nearest high-refractive index layer) closest to the oxidized constriction layer 107 is replaced with a strain compensation layer 115 whose characteristics are similar to those of the high-refractive index layer 108H.

[0112] The surface-emitting device 30-3 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in layers below the oxide constriction layer 107 (for example, the refractive index layer below the oxide constriction layer 107 of the first semiconductor multilayer film reflector 103, the buffer layer 102, etc.).

[0113] 10. Surface Light Emitting Device According to Example 4 of Third Embodiment of the Present Technology FIG. 26 is a cross-sectional view of a surface light emitting device 30-4 according to Example 4 of the third embodiment of the present technology.

[0114] As shown in Figure 26, the surface-emitting element 30-4 has a configuration in which the upper-nearest high-refractive-index layer and the lower-nearest high-refractive-index layer of the first semiconductor multilayer reflector 103 in the third surface-emitting element 20 (see Figure 23) are each replaced with a strain compensation layer 115 whose characteristics are similar to those of the high-refractive-index layer.

[0115] The surface-emitting device 30-4 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain in the upper layers of the oxide constriction layer 107 (e.g., the first cladding layer 104, the light-emitting layer 105, the second cladding layer 106, and the refractive index layers of the second semiconductor multilayer film reflector 108) and the lower layers (e.g., the refractive index layer below the oxide constriction layer 107 of the first semiconductor multilayer film reflector 103, the buffer layer 102, etc.).

[0116] 27 is a cross-sectional view of a surface light emitting device 40-1 according to an example of the fourth embodiment of the present technology. Fig. 28 is a cross-sectional view of a fourth surface light emitting device 40 serving as a reference for the element characteristics of the surface light emitting device 40-1 according to the example of the fourth embodiment of the present technology.

[0117] The fourth surface-emitting element 40 has a configuration similar to that of the first surface-emitting element 10, except that an oxide constriction layer 107 is disposed between the first semiconductor multilayer film reflector 103 and the first cladding layer 104, as shown in FIG.

[0118] As shown in FIG. 27, the surface light emitting device 40-1 has a configuration in which the first cladding layer 104 in the fourth surface light emitting device 40 is replaced with a strain compensation layer 115 having characteristics similar to those of the first cladding layer 104.

[0119] The surface-emitting device 40-1 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in the layers above the oxidized constriction layer 107 (e.g., the light-emitting layer 105, the second cladding layer 106, and the refractive index layers of the second semiconductor multilayer film reflector 108).

[0120] 29 is a cross-sectional view of a surface light emitting device 50-1 according to Example 1 of the fifth embodiment of the present technology. Fig. 30 is a cross-sectional view of a fifth surface light emitting device 50 serving as a reference for element characteristics of surface light emitting devices according to examples of the fifth embodiment of the present technology.

[0121] As shown in FIG. 30 , the fifth surface-emitting element 50 has a configuration similar to that of the first surface-emitting element 10, except that an oxide constriction layer 107 is disposed both inside the first semiconductor multilayer reflector 103 and inside the second semiconductor multilayer reflector 108.

[0122] As shown in Figure 29, the surface-emitting element 50-1 has a configuration in which, in the fifth surface-emitting element 50, the upper-nearest high-refractive-index layer of the first semiconductor multilayer reflector 103 and the lower-nearest high-refractive-index layer of the second semiconductor multilayer reflector 108 are each replaced with a strain compensation layer 115 whose characteristics are similar to those of the high-refractive-index layer.

[0123] The surface-emitting device 50-1 can achieve substantially the same effects as the surface-emitting device 10-1 of Example 1, and can also suppress the occurrence of defects due to compressive strain, particularly in the layers between the oxide constriction layer 107 in the first semiconductor multilayer reflector 103 and the oxide constriction layer 107 in the second semiconductor multilayer reflector 108 (e.g., the first cladding layer 104, the light-emitting layer 105, and the second cladding layer 106).

[0124] 13. Surface Light Emitting Device According to Example 2 of Fifth Embodiment of the Present Technology> FIG. 30 is a cross-sectional view of a surface light emitting device 50-2 according to Example 2 of the fifth embodiment of the present technology.

[0125] As shown in Figure 31, the surface-emitting element 50-2 has a configuration in which, in the fifth surface-emitting element 50 (see Figure 30), the upper-nearest high-refractive-index layer and the lower-nearest high-refractive-index layer of the first semiconductor multilayer reflector 103 and the upper-nearest high-refractive-index layer and the lower-nearest high-refractive-index layer of the second semiconductor multilayer reflector 108 are each replaced with a strain compensation layer 115 whose characteristics are similar to those of the high-refractive-index layer.

[0126] According to the surface light emitting device 50-2, substantially the same effects as those of the surface light emitting device 10-1 according to the first embodiment can be obtained, and defects caused by compressive strain in the resonator can be suppressed.

[0127] 32 is a cross-sectional view of a surface light emitting device 60-1 according to an example of the sixth embodiment of the present technology. Fig. 33 is a cross-sectional view of a sixth surface light emitting device 60 serving as a reference for the element characteristics of the surface light emitting device 60-1 according to the example of the sixth embodiment of the present technology.

[0128] As shown in Figure 33, the sixth surface-emitting element 60 has a configuration similar to that of the first surface-emitting element 10, except that an oxide constriction layer 107 is disposed both between the first semiconductor multilayer film reflector 103 and the first cladding layer 104 and between the second cladding layer 106 and the second semiconductor multilayer film reflector 108.

[0129] As shown in FIG. 32, the surface light emitting device 60-1 has a configuration in which the first and second cladding layers 104 and 106 in the sixth surface light emitting device 60 are each replaced with a strain compensation layer 115 having characteristics similar to those of the cladding layers.

[0130] According to the surface light emitting device 60-1, substantially the same effects as those of the surface light emitting device 10-1 according to the first embodiment can be obtained, and in particular, defects caused by compressive strain in the light emitting layer 105 can be suppressed.

[0131] In the surface-emitting device 60-1, the nearest high refractive index layer and / or the nearest refractive index layer of the first semiconductor multilayer reflector 103 may also be replaced with the strain-compensating layer 115. In the surface-emitting device 60-1, the nearest high refractive index layer and / or the nearest refractive index layer of the second semiconductor multilayer reflector 108 may also be replaced with the strain-compensating layer 115.

[0132] 15. Surface light emitting device according to example of seventh embodiment of the present technology> Fig. 34 is a cross-sectional view of a surface light emitting device 70-1 according to an example of the seventh embodiment of the present technology. Fig. 35 is a plan view of the surface light emitting device 70-1 according to the example of the seventh embodiment of the present technology. Fig. 34 is a cross-sectional view taken along line 34-34 in Fig. 35. Fig. 36 is a cross-sectional view of a seventh surface light emitting device 70 serving as a reference for the element characteristics of the surface light emitting device 70-1 according to the example of the seventh embodiment of the present technology.

[0133] As shown in FIG. 36, the seventh surface light emitting device 70 has a configuration generally similar to that of the first surface light emitting device 10, except that it has a mesare-less structure.

[0134] In the seventh surface light emitting device 70, a plurality of (e.g., eight) trenches T (grooves) as recesses are provided at approximately equal intervals on the surface of the light emitting element portion LE on the second structure ST2 side so as to surround at least the oxidized constriction layer 107 (see FIG. 35 ). Each trench T exposes the side surface of the oxidized layer 107S when the oxidized constriction layer 107 is formed by an oxidation process. The bottom surface of each trench TR is located at least closer to the substrate 101 than the oxidized constriction layer 107 (e.g., within the first cladding layer 104). The number, width, depth, shape, etc. of the trenches T can be changed as appropriate.

[0135] A circular ion implantation region IIA (shown in light grey in FIG. 34) is provided so as to surround the outer periphery of the oxide constriction layer 107. This suppresses current leakage.

[0136] As shown in FIG. 34, the surface light emitting device 70-1 has a configuration in which the lower-most adjacent high refractive index layer in the seventh surface light emitting device 70 is replaced with a strain compensation layer 115 having characteristics similar to those of the lower-most adjacent high refractive index layer.

[0137] According to the surface light emitting device 70-1, substantially the same effects as those of the surface light emitting device 10-1 according to the first embodiment can be obtained.

[0138] 37 is a cross-sectional view of a surface light emitting device 80-1 according to an example of the eighth embodiment of the present technology. Fig. 38 is a cross-sectional view of an eighth surface light emitting device 80 serving as a reference for element characteristics of the surface light emitting device 80-1 according to the example of the eighth embodiment of the present technology.

[0139] As shown in FIG. 38, the eighth surface light emitting element 80 constitutes a surface light emitting element array having a plurality of light emitting element units LE.

[0140] In the eighth surface light emitting element 80, as an example, a plurality of light emitting element units LE share the substrate 101, the buffer layer 102, the first semiconductor multilayer film reflector 103, and the cathode electrode 113. The eighth surface light emitting element 80 has an electrode layout in which the light emitting element units LE have independent anodes and shared cathodes, and each light emitting element unit LE can be driven independently.

[0141] As shown in Figure 37, the surface-emitting element 80-1 has a configuration in which the lower-side nearest high refractive index layer in each light-emitting element section LE of the eighth surface-emitting element 80 is replaced with a strain compensation layer 115 whose characteristics are similar to those of the lower-side nearest high refractive index layer.

[0142] The surface light emitting element 80-1 can realize a surface light emitting element array (specifically, a surface emitting laser array) that can improve reliability while suppressing deterioration of element characteristics.

[0143] 39 is a cross-sectional view of a surface light emitting device 90-1 according to an example of the ninth embodiment of the present technology. Fig. 40 is a cross-sectional view of a ninth surface light emitting device 90 serving as a reference for element characteristics of the surface light emitting device 90-1 according to the example of the ninth embodiment of the present technology.

[0144] As shown in FIG. 40, the ninth surface light emitting element 90 has the same configuration as the first surface light emitting element 10, except that it is a surface-emitting light emitting diode (LED).

[0145] The ninth surface light emitting device 90 does not have the second semiconductor multilayer film reflector 108 , and the oxide constriction layer 107 is disposed between the second cladding layer 106 and the contact layer 109 .

[0146] As shown in FIG. 39, the surface light emitting device 90-1 has a configuration in which the second cladding layer 106 in the ninth surface light emitting device 90 is replaced with a strain compensation layer 115 having characteristics similar to those of the second cladding layer 106.

[0147] In the surface-emitting element 90-1, the light emitted downward from the light-emitting layer 105 and reflected upward by the first semiconductor multilayer film reflector 103 and the light emitted upward from the light-emitting layer 105 are combined and emitted from the emission port on the inner diameter side of the anode electrode 111.

[0148] The surface light emitting device 90-1 can realize a surface emission type LED that can improve reliability while suppressing deterioration of device characteristics.

[0149] In the surface light emitting device 90-1, at least a part of the contact layer 109 may be replaced with a strain compensation layer 115 having characteristics similar to those of the at least a part of the contact layer 109.

[0150] 41 is a cross-sectional view of a surface light emitting device 100-1 according to an example of the tenth embodiment of the present technology. Fig. 42 is a cross-sectional view of a tenth surface light emitting device 100 that serves as a reference for the element characteristics of the surface light emitting device 100-1 according to the example of the tenth embodiment of the present technology.

[0151] As shown in FIG. 42, the tenth surface-emitting device 100 has substantially the same configuration as the first surface-emitting device 10, except that it is a bottom-emitting surface-emitting laser (VCSEL).

[0152] In the tenth surface-emitting device 100, the reflectance on the second semiconductor multilayer film reflector 108 side is set slightly higher than the reflectance on the first semiconductor multilayer film reflector 103 side. The anode electrode 111 is provided in a solid state on the contact layer 109. The anode wiring 112 covers the entire area of ​​the anode electrode 111. The anode electrode 111 and the anode wiring 112 can also function as metal reflectors. The cathode electrode 113 is provided in a circumferential shape (e.g., a ring shape) so as to surround the light-emitting area LA in a plan view. The inner diameter side of the cathode electrode 113 is the light exit port.

[0153] As shown in FIG. 41, the surface light emitting device 100-1 has a configuration in which the lower-most adjacent high refractive index layer in the tenth surface light emitting device 100 is replaced with a strain compensation layer 115 whose characteristics are similar to those of the lower-most adjacent high refractive index layer.

[0154] The surface light emitting device 100-1 can realize a back-emitting VCSEL that can improve reliability while suppressing deterioration of device characteristics.

[0155] 43 is a cross-sectional view of a surface light emitting device 11-1 according to an example of the eleventh embodiment of the present technology. Fig. 44 is a cross-sectional view of an eleventh surface light emitting device 11 serving as a reference for element characteristics of the surface light emitting device 11-1 according to the example of the eleventh embodiment of the present technology.

[0156] As shown in FIG. 44, the eleventh surface light emitting device 11 has a configuration generally similar to that of the first surface light emitting device 10, except that it has an intra-cavity structure.

[0157] The eleventh surface light emitting element 11 does not have an anode wiring 112. A cathode electrode 113 is provided on the upper surface of the first semiconductor multilayer film reflector 103 in a circumferential shape (for example, a ring shape) so as to surround the mesa structure MS.

[0158] As shown in FIG. 43, the surface light emitting element 11-1 has a configuration in which the lower-most adjacent high refractive index layer in the eleventh surface light emitting element 11 is replaced with a strain compensation layer 115 whose characteristics are similar to those of the lower-most adjacent high refractive index layer.

[0159] The surface light emitting device 11-1 can provide a VCSEL that can improve reliability while suppressing deterioration of device characteristics and can reduce series resistance.

[0160] 20. Modifications of the Present Technology The present technology is not limited to the examples of the above-described embodiments, and can be modified as appropriate.

[0161] For example, as in the surface-emitting device 20-1M according to a modified example of Example 1 of the second embodiment shown in Figure 45, in the second surface-emitting device 20 (see Figure 20), the portion of the second cladding layer 106 on the oxidized constriction layer 107 side may be replaced with a strain compensation layer 115 whose characteristics are similar to those of the second cladding layer 106.

[0162] For example, as in the case of a surface-emitting device 40-1M according to a modified example of Example 1 of the fourth embodiment shown in Figure 46, in the fourth surface-emitting device 40 (see Figure 28), the portion of the first cladding layer 104 on the oxidized constriction layer 107 side may be replaced with a strain compensation layer 115 having characteristics similar to those of the first cladding layer 104.

[0163] The surface-emitting device according to the present technology may have a configuration in which, when the surface-emitting device that serves as a reference for the device characteristics has an indirect transition type first semiconductor layer, the first semiconductor layer is replaced with an indirect transition type strain compensation layer.

[0164] The surface-emitting device according to the present technology may have a configuration in which, when the surface-emitting device that serves as a reference for the device characteristics has an indirect transition type second semiconductor layer, the second semiconductor layer is replaced with an indirect transition type strain compensation layer.

[0165] The surface-emitting device according to the present technology may have a configuration in which the low-refractive index layer closest to the oxide constriction layer among the low-refractive index layers of the first semiconductor multilayer reflector of the surface-emitting device, which serves as a reference for the device characteristics, is replaced with a strain compensation layer having characteristics similar to those of the low-refractive index layer.

[0166] The surface-emitting device according to the present technology may have a configuration in which the low-refractive index layer closest to the oxide constriction layer among the low-refractive index layers of the second semiconductor multilayer reflector of the surface-emitting device, which serves as a reference for the device characteristics, is replaced with a strain compensation layer having characteristics similar to those of the low-refractive index layer.

[0167] In the surface light emitting devices according to the above-described embodiments and modifications, the buffer layer 102 may not be provided.

[0168] In the surface emitting devices (particularly surface emitting lasers) according to the above-described embodiments and modifications, at least one of the first and second cladding layers 104 and 106 may not be provided.

[0169] In the surface light emitting devices according to the above-described embodiments and modifications, the contact layer 109 may not be provided.

[0170] In the above-described embodiments and modifications, a GaAs-based surface-emitting device (a material system lattice-matched to GaAs) has been mainly described, but the present technology is not limited thereto and can also be applied to, for example, an InP-based surface-emitting device (a material system lattice-matched to InP), a GaN-based surface-emitting device (a material system lattice-matched to GaN), etc. Examples of InP-based devices include AlGaInP-based devices, AlGaInAs-based devices, and AlInAs-based devices.

[0171] That is, materials that emit light at any wavelength within the wavelength range of 200 to 2000 nm can be used for the surface light emitting element.

[0172] At least one of the first and second structures ST1, ST2 is not limited to a semiconductor multilayer film reflector, but may in fact have a reflector made up of one or a combination of two or more types selected from semiconductors, dielectrics, and metals.

[0173] In the surface light emitting devices according to the above-described embodiments and modifications, the conductivity types (p-type and n-type) of the semiconductor layers included in the first structure ST1 and the semiconductor layers included in the second structure ST2 may be reversed. In this case, however, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0174] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0175] In each of the above-described embodiments, the arrangement, material, conductivity type, thickness, width, value, shape, size, etc. of each layer constituting the surface light emitting device can be changed as appropriate within the range in which the surface light emitting device functions.

[0176] 21. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, or a low-power device (e.g., a smartphone, a smartwatch, a tablet, a mouse, etc.), or a communication device (e.g., a transmitter, a receiver, a transceiver, etc.).

[0177] The surface light emitting device according to the present technology can also be applied as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0178] 22. Example of Application of Surface Light Emitting Device to Distance Measuring Device An application example of the surface light emitting device 10-1 according to Example 1 of the first embodiment of the present technology will be described below.

[0179] 47 shows an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a surface light emitting element 10-1, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface light emitting element 10-1. The distance measurement device 1000 includes, for example, the surface light emitting element 10-1, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0180] The light receiving device 125 receives light emitted from the surface light emitting device 10-1 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 128 is a lens, such as a collimating lens, for converting the light emitted from the surface light emitting device 10-1 into parallel light. The lens 138 is a lens, such as a condensing lens, for collecting the light reflected by the subject S and guiding it to the light receiving device 125.

[0181] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light-receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155, or may be an output signal from a detection unit that directly detects the output of the surface-emitting device 10-1. The control unit 155 is, for example, a processor that controls the surface-emitting device 10-1, the light-receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 175.

[0182] In this application example, instead of the surface-emitting element 10-1, any of the surface-emitting elements 10-2, 10-3, 10-4, 20-1, 20-1M, 20-2, 30-1, 30-2, 30-3, 30-4, 40-1, 40-1M, 50-1, 50-2, 60-1, 70-1, 80-1, 90-1, 100-1, and 11-1 can also be applied to the distance measurement device 1000.

[0183] 23. Example in which distance measuring device is mounted on a moving body> FIG. 48 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0184] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 48, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0185] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0186] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0187] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0188] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0189] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0190] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0191] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0192] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 48, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0193] FIG. 49 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0194] In FIG. 49, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0195] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0196] 49 shows an example of the detection ranges of the distance measuring devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measuring device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measuring devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measuring device 12104 provided on the rear bumper or back door.

[0197] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0198] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0199] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0200] The present technology can also be configured as follows: (1) A surface-emitting device comprising a light-emitting element portion including: a first structure; a second structure stacked on the first structure; a light-emitting layer provided between the first and second structures; an oxide constriction layer provided in the first structure and / or the second structure; and a strain-compensation layer provided in the first structure and / or the second structure, wherein the strain-compensation layer has a function of suppressing degradation of element characteristics. (2) The surface-emitting device according to (1), wherein the oxide constriction layer and the strain-compensation layer are provided in the first structure and / or the oxide constriction layer and the strain-compensation layer are provided in the second structure. (3) The surface-emitting device according to (1) or (2), wherein, when the oxidized constriction layer and the strain compensation layer are provided in the first structure, the strain compensation layer is arranged in the first structure on the light-emitting layer side of the oxidized constriction layer and / or on the opposite side of the oxidized constriction layer from the light-emitting layer side; and when the oxidized constriction layer and the strain compensation layer are provided in the second structure, the strain compensation layer is arranged in the second structure on the light-emitting layer side of the oxidized constriction layer and / or on the opposite side of the oxidized constriction layer from the light-emitting layer side. (4) The surface-emitting device according to any one of (1) to (3), wherein, when the oxidized constriction layer and the strain-compensating layer are provided in the first structure, the first structure is a first replacement structure in which at least one first semiconductor layer among the plurality of first semiconductor layers is replaced with a first strain-compensating layer as the strain-compensating layer in a first reference structure having the oxidized constriction layer and a plurality of first semiconductor layers, which serves as a reference for the element characteristics, and which has the oxidized constriction layer and a plurality of first semiconductor layers, and the first strain-compensating layer has characteristics similar to those of the first semiconductor layer; and when the oxidized constriction layer and the strain-compensating layer are provided in the second structure, the second structure is a second replacement structure in which at least one second semiconductor layer among the plurality of second semiconductor layers is replaced with a second strain-compensating layer as the strain-compensating layer in a second reference structure having the oxidized constriction layer and a plurality of second semiconductor layers, which serves as a reference for the element characteristics, and which has the second strain-compensating layer has characteristics similar to those of the second semiconductor layer.(5) The surface-emitting device according to (4), wherein, when the first structure is the first substitution structure, the first reference structure includes a first semiconductor multilayer reflector having the first semiconductor layer as a refractive index layer, and when the second structure is the second substitution structure, the second reference structure includes a second semiconductor multilayer reflector having the second semiconductor layer as a refractive index layer. (6) The surface-emitting device according to (5), wherein, when the first structure is the first substitution structure, the first semiconductor layer is a refractive index layer that is closest to the oxide constriction layer in the first semiconductor multilayer reflector, and when the second structure is the second substitution structure, the second semiconductor layer is a refractive index layer that is closest to the oxide constriction layer in the second semiconductor multilayer reflector. (7) The surface-emitting device according to (5) or (6), wherein, when the first structure is the first substitution structure, the first semiconductor layer is a high-refractive index layer or a low-refractive index layer that is closest to the oxide constriction layer in the first semiconductor multilayer reflector, and when the second structure is the second substitution structure, the second semiconductor layer is a high-refractive index layer or a low-refractive index layer that is closest to the oxide constriction layer in the second semiconductor multilayer reflector. (8) The surface-emitting device according to (4), wherein, when the first structure is the first substitution structure, the first reference structure includes a first cladding layer that has the first semiconductor layer as at least a part thereof, and when the second structure is the second substitution structure, the second reference structure includes a second cladding layer that has the second semiconductor layer as at least a part thereof. (9) The surface-emitting device according to (8), wherein, when the first structure is the first substitution structure, the first semiconductor layer is a portion of the first cladding layer on the oxidized constriction layer side, and when the second structure is the second substitution structure, the second semiconductor layer is a portion of the second cladding layer on the oxidized constriction layer side. (10) The surface-emitting device according to any one of (4) to (9), wherein, when the first structure is the first substitution structure, the first semiconductor layer and the first strain-compensating layer have the same optical thickness, and when the second structure is the second substitution structure, the second semiconductor layer and the second strain-compensating layer have the same optical thickness.(11) The surface-emitting device according to any one of (4) to (10), wherein when the first structure is the first substitution structure, the first semiconductor layer and the first strain-compensating layer are semiconductor layers whose transition type does not change, and when the second structure is the second substitution structure, the second semiconductor layer and the second strain-compensating layer are semiconductor layers whose transition type does not change. (12) The surface-emitting device according to any one of (4) to (11), wherein when the first structure is the first substitution structure, the band gap difference between the first semiconductor layer and the first strain-compensating layer is 0.3 eV or less, and when the second structure is the second substitution structure, the band gap difference between the second semiconductor layer and the second strain-compensating layer is 0.3 eV or less. (13) The surface-emitting device according to any one of (1) to (12), wherein the strain-compensating layer has tensile strain. (14) The surface-emitting device according to (13), wherein the tensile strain is 2% or less. (15) The surface-emitting device according to any one of (1) to (14), wherein the thickness of the strain-compensation layer is equal to or less than a critical film thickness. (16) The surface-emitting device according to any one of (1) to (15), wherein the thickness of the strain-compensation layer is 10 nm or more. (17) The surface-emitting device according to any one of (1) to (16), wherein the strain-compensation layer is made of a compound semiconductor containing at least two of Al, Ga, In, As, and P. (18) The surface-emitting device according to any one of (1) to (17), wherein the light-emitting element component has a defect portion on the surface facing the second structure. (19) The surface-emitting device according to any one of (1) to (18), wherein both the first and second structures include a reflecting mirror. (20) The surface-emitting device according to any one of (1) to (19), wherein the element characteristic is an IL characteristic. (21) An electronic device comprising a surface-emitting element, the surface-emitting element comprising: a first structure; a second structure stacked on the first structure; a light-emitting layer provided between the first and second structures; and an oxide constriction layer provided within the first structure and / or the second structure, wherein a strain compensation layer is provided within the first structure and / or the second structure, and the strain compensation layer has a function of suppressing deterioration of element characteristics.

[0201] 10-2, 10-3, 10-4, 20-1, 20-2, 30-1, 30-2, 30-3, 30-4, 40-1, 50-1, 50-2, 60-1, 70-1, 80-1, 90-1, 100-1, 11-1: surface-emitting element 103: first semiconductor multilayer film reflector (reflector) 103H: high-refractive-index layer (first semiconductor layer) 103L: low-refractive-index layer (first semiconductor layer) 104: first cladding layer (first semiconductor layer) 105: light-emitting layer 106: second cladding layer (second semiconductor layer) 107: oxidation constriction layer 107a: non-oxidized region 107b: oxidized region 108: second semiconductor multilayer film reflector (reflector) 108H: high-refractive-index layer (second semiconductor layer) 108L: low refractive index layer (second semiconductor layer) LE: light emitting element portion ST1: first structure ST2: second structure RS1: first reference structure RS2: second reference structure

Claims

1. A surface-emitting device comprising a light-emitting element portion including: a first structure; a second structure stacked on the first structure; a light-emitting layer provided between the first and second structures; an oxide constriction layer provided within the first structure and / or the second structure; and a strain compensation layer provided within the first structure and / or the second structure, wherein the strain compensation layer has the function of suppressing degradation of the element characteristics.

2. The surface light emitting device according to claim 1, wherein the oxide constriction layer and the strain compensation layer are provided in the first structure, and / or the oxide constriction layer and the strain compensation layer are provided in the second structure.

3. A surface-emitting device as described in claim 2, wherein, when the oxidized constriction layer and the strain compensation layer are provided in the first structure, the strain compensation layer is arranged in the first structure on the light-emitting layer side of the oxidized constriction layer and / or on the opposite side of the oxidized constriction layer from the light-emitting layer side, and when the oxidized constriction layer and the strain compensation layer are provided in the second structure, the strain compensation layer is arranged in the second structure on the light-emitting layer side of the oxidized constriction layer and / or on the opposite side of the oxidized constriction layer from the light-emitting layer side.

4. The surface-emitting device according to claim 3, wherein, when the oxide constriction layer and the strain compensation layer are provided in the first structure, the first structure is a first replacement structure in which at least one first semiconductor layer of the plurality of first semiconductor layers is replaced with a first strain compensation layer as the strain compensation layer in a first reference structure having the oxide constriction layer and a plurality of first semiconductor layers, which serves as a reference for the device characteristics, and which is configured as the first reference structure having the oxide constriction layer and a plurality of second semiconductor layers, and which serves as a reference for the device characteristics, and the second structure is a second replacement structure in which at least one second semiconductor layer of the plurality of second semiconductor layers is replaced with a second strain compensation layer as the strain compensation layer, and which is configured as the second reference structure having the oxide constriction layer and a plurality of second semiconductor layers, which serves as a reference for the device characteristics.

5. A surface-emitting device as described in claim 4, wherein, when the first structure is the first substitution structure, the first reference structure includes a first semiconductor multilayer reflector having the first semiconductor layer as a refractive index layer, and when the second structure is the second substitution structure, the second reference structure includes a second semiconductor multilayer reflector having the second semiconductor layer as a refractive index layer.

6. A surface-emitting device as described in claim 5, wherein, when the first structure is the first substitution structure, the first semiconductor layer is the refractive index layer closest to the oxide constriction layer in the first semiconductor multilayer reflector, and when the second structure is the second substitution structure, the second semiconductor layer is the refractive index layer closest to the oxide constriction layer in the second semiconductor multilayer reflector.

7. A surface-emitting device as described in claim 5, wherein, when the first structure is the first substitution structure, the first semiconductor layer is a high-refractive index layer or a low-refractive index layer that is closest to the oxide constriction layer in the first semiconductor multilayer reflector, and when the second structure is the second substitution structure, the second semiconductor layer is a high-refractive index layer or a low-refractive index layer that is closest to the oxide constriction layer in the second semiconductor multilayer reflector.

8. A surface-emitting device as described in claim 4, wherein, when the first structure is the first substitution structure, the first reference structure includes a first cladding layer having at least a part of the first semiconductor layer, and when the second structure is the second substitution structure, the second reference structure includes a second cladding layer having at least a part of the second semiconductor layer.

9. A surface-emitting device as described in claim 8, wherein when the first structure is the first substitution structure, the first semiconductor layer is the portion of the first cladding layer on the oxide constriction layer side, and when the second structure is the second substitution structure, the second semiconductor layer is the portion of the second cladding layer on the oxide constriction layer side.

10. The surface-emitting device described in claim 4, wherein when the first structure is the first substitution structure, the first semiconductor layer and the first strain-compensating layer have the same optical thickness, and when the second structure is the second substitution structure, the second semiconductor layer and the second strain-compensating layer have the same optical thickness.

11. The surface-emitting device described in claim 4, wherein when the first structure is the first substitution structure, the first semiconductor layer and the first strain-compensating layer are semiconductor layers whose transition type does not change, and when the second structure is the second substitution structure, the second semiconductor layer and the second strain-compensating layer are semiconductor layers whose transition type does not change.

12. The surface-emitting device according to claim 4, wherein when the first structure is the first substitution structure, the band gap difference between the first semiconductor layer and the first strain-compensating layer is 0.3 eV or less, and when the second structure is the second substitution structure, the band gap difference between the second semiconductor layer and the second strain-compensating layer is 0.3 eV or less.

13. The surface-emitting device according to claim 1, wherein the strain-compensating layer has a tensile strain.

14. The surface light emitting device according to claim 13, wherein the tensile strain is 2% or less.

15. The surface light emitting device according to claim 1, wherein the thickness of said strain compensation layer is equal to or less than a critical film thickness.

16. The surface-emitting device according to claim 1, wherein the strain-compensating layer has a thickness of 10 nm or more.

17. The surface light emitting device according to claim 1, wherein the strain compensation layer is made of a compound semiconductor containing at least two of Al, Ga, In, As, and P.

18. The surface light emitting device according to claim 1, wherein the light emitting element section has a defect portion on the surface on the second structure side.

19. The surface emitting device according to claim 1, wherein the first and second structures both include reflectors.

20. The surface light emitting device according to claim 1, wherein the device characteristics are I-L characteristics.

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