Pressure sensor, method for producing same, and image display device comprising same

Abstract

Provided are a pressure sensor, a method for producing same, and an image display device comprising same. The pressure sensor comprises: a transfer support layer; and sensing-electrode patterns arranged on one surface of the transfer support layer, each comprising a metallic pattern and a pressure-sensitive pattern one surface of which is continuous with a surface of the metallic pattern.

Description

Pressure sensor, method for manufacturing same, and image display device including same

[0001] The present invention relates to a pressure sensor, a method for manufacturing the same, and an image display device including the same. More specifically, the present invention relates to a pressure sensor including a plurality of electrode patterns, a method for manufacturing the same, and an image display device including the same.

[0002] With the recent advancement of the information society, demands for displays are also diversifying. For example, various flat panel display devices featuring thinness, weight reduction, and low power consumption are being researched, including liquid crystal displays (LCDs), plasma display panels (PDPs), electroluminescent displays (ELDs), and organic light-emitting diode (OLED) displays.

[0003] Meanwhile, various sensor elements are being incorporated into the display device to implement user command input. For example, a touch sensor or touch screen panel is being incorporated onto the screen of the display device to input user commands through touch.

[0004] Additionally, a pressure sensor may be incorporated into the display device to detect pressure applied, for example, through a user's finger, thereby initiating operation of the display device or executing a user command.

[0005] A pressure sensor comprises electrode patterns facing each other and can detect changes in electrical properties due to pressure between the electrode patterns. The electrode patterns of the pressure sensor may have a multilayer structure containing different materials. Consequently, it is difficult to form a fine pattern with a uniform line width.

[0006] For example, pressure sensors are being incorporated into various image display devices recently, as in Korean Patent No. 10-2603269.

[0007] An object of the present invention is to provide a pressure sensor having improved sensitivity and reliability.

[0008] One object of the present invention is to provide a method for manufacturing a pressure sensor having improved sensitivity and reliability.

[0009] An object of the present invention is to provide an image display device including a pressure sensor having improved sensitivity and reliability.

[0010] 1. A pressure sensor comprising a transfer support layer; and sensing electrode patterns arranged on one surface of the transfer support layer, each of which includes a metal pattern and a pressure-sensitive pattern having a side continuous with a side of the metal pattern.

[0011] 2. A pressure sensor further comprising a substrate bonded to the other surface opposite to the one surface of the transfer support layer in the above 1.

[0012] 3. In the above 2, the transfer support layer includes a first transfer support layer and a second transfer support layer, and the substrate includes a first substrate bonded to the other surface of the first transfer support layer and a second substrate bonded to the other surface of the second transfer support layer.

[0013] The metal pattern includes a first metal pattern arranged on one surface of the first transfer support layer and a second metal pattern arranged on one surface of the second transfer support layer,

[0014] The pressure-sensitive pattern includes a first pressure-sensitive pattern formed on the first metal pattern and a second pressure-sensitive pattern formed on the second metal pattern,

[0015] A pressure sensor, wherein the sensing electrode patterns each include a first sensing electrode pattern including the first metal pattern and the first pressure-sensitive pattern, and a second sensing electrode pattern including the second metal pattern and the second pressure-sensitive pattern.

[0016] 4. In the above 3, the first sensor structure is defined by the first substrate, the first transfer support layer, and the first sensing electrode patterns, and the second sensor structure is defined by the second substrate, the second transfer support layer, and the second sensing electrode patterns.

[0017] A pressure sensor in which the first sensor structure and the second sensor structure are coupled so that the first pressure-sensitive patterns and the second pressure-sensitive patterns face each other.

[0018] 5. A pressure sensor according to 4 above, further comprising an air layer interposed between the first sensing electrode patterns and the second sensing electrode patterns.

[0019] 6. In the above 1, the pressure sensor includes a quantum tunneling composite material (QTC).

[0020] 7. A pressure sensor in the above 1, wherein the metal pattern is in contact with the one surface of the transfer support layer, and the pressure-sensitive pattern is formed directly on the upper surface of the metal pattern.

[0021] 8. A pressure sensor according to the above 1, further comprising wires formed at one end of the transfer support layer and connected to the metal patterns.

[0022] 9. A pressure sensor according to 8 above, wherein the width of the metal pattern is 200㎛ or less.

[0023] 10. In the above 9, the width of the wiring is smaller than the width of the metal pattern, a pressure sensor.

[0024] 11. In the above 9, the width of the pressure-sensitive pattern is the same as the width of the metal pattern, the pressure sensor.

[0025] 12. An image display device comprising a pressure sensor of the above-described embodiments; and a display panel laminated on the pressure sensor.

[0026] 13. A method for manufacturing a pressure sensor, comprising: sequentially forming a transfer support layer, a metal layer having a wiring region, and a sensor region on a carrier substrate; forming pressure-sensitive patterns on the sensor region of the metal layer; and forming metal patterns by etching the metal layer through an etching process using the pressure-sensitive patterns as a mask.

[0027] 14. A method for manufacturing a pressure sensor, further comprising: forming a photoresist pattern on the wiring area of ​​the metal layer in the above 13; and forming wiring by etching the metal layer through an etching process using the photoresist pattern as an etching mask.

[0028] 15. A method for manufacturing a pressure sensor, wherein in the above 14, the wiring and the metal patterns are formed simultaneously through the same etching process.

[0029] 16. A method for manufacturing a pressure sensor, wherein in the above 14, the pressure-sensitive patterns are selectively formed on the sensor area of ​​the metal layer after the step of forming the wiring.

[0030] 17. In the above 13, after the step of forming the metal patterns,

[0031] A method for manufacturing a pressure sensor, comprising: a step of peeling the carrier substrate from the transfer support layer; and a step of bonding a substrate to the peeled surface of the carrier substrate of the transfer support layer.

[0032] 18. In the above 13, the step of forming the pressure sensitive patterns is,

[0033] A method for manufacturing a pressure sensor, comprising: forming a pressure-sensitive layer on the sensor region of the metal layer; and patterning the pressure-sensitive layer through laser etching.

[0034] A pressure sensor according to embodiments of the present invention may include sensing electrodes formed on a transfer support layer. The sensing electrodes may have a multi-layer structure and may be formed by performing a photolithography process and a laser etching process.

[0035] Therefore, sensing electrodes with fine line widths can be stably and reliably formed by selecting an appropriate etching process depending on the material of each layer.

[0036] According to exemplary embodiments, the metal pattern and pressure-sensitive pattern included in the sensing electrode may share the same side. Therefore, sensing electrodes with finer line widths can be formed, and the spacing between adjacent sensing electrodes can be more finely adjusted. Consequently, the resolution of the pressure sensor can be further improved.

[0037] FIG. 1 is a schematic cross-sectional diagram illustrating a pressure sensor according to exemplary embodiments.

[0038] FIGS. 2 to 6 are schematic cross-sectional views illustrating a method for manufacturing a pressure sensor according to exemplary embodiments.

[0039] Figures 7 to 9 are schematic cross-sectional views illustrating a method for manufacturing a pressure sensor according to exemplary embodiments.

[0040] FIG. 10 is a schematic cross-sectional view showing an image display device according to exemplary embodiments.

[0041]

[0042] Embodiments of the present invention provide a pressure sensor including sensing electrode patterns having a multi-layer structure and a method for manufacturing the same. In addition, an image display device including the pressure sensor is provided.

[0043] According to exemplary embodiments, the pressure sensor may detect a voltage change due to the pressure applied to the first sensing electrode pattern and the second sensing electrode pattern, thereby generating an electrical signal. For example, the pressure sensor may be positioned on the back side of the image display device so as not to be exposed to the user.

[0044] Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings. However, the following drawings attached to this specification illustrate preferred embodiments of the present invention and, together with the contents of the invention described above, serve to further understand the technical concept of the present invention. Therefore, the present invention should not be interpreted as being limited to the matters described in such drawings.

[0045] The terms “first,” “second,” “top surface,” “upper part,” “lower part,” “lower part,” etc. used in this application indicate relative positions and are used to distinguish components, and do not limit the absolute positions of the components.

[0046] FIG. 1 is a schematic cross-sectional diagram illustrating a pressure sensor according to exemplary embodiments.

[0047] Referring to FIG. 1, the sensing electrode patterns (145) of a multi-layer structure may be included. The sensing electrode patterns (145) may be arranged on a transfer support layer (100). The pressure sensor may further include wiring (140). The sensing electrode patterns (145) may each include a metal pattern (115) and a pressure-sensitive pattern (135). The transfer support layer (100) and the sensing electrode patterns (145) may be arranged on a substrate (80) to define a sensor structure (e.g., a half-sensor structure).

[0048] According to exemplary embodiments, the sensor structure (190) may include a first sensor structure (190a) and a second sensor structure (190b). The first sensor structure (190a) and the second sensor structure (190b) may be coupled to face each other with an air layer (170) therebetween by being fixed by a coupling structure (160).

[0049] The first sensor structure (190a) may include a first substrate (80a), a first transfer support layer (100a), and first sensing electrode patterns (145a).

[0050] The first sensing electrode patterns (145a) are arranged on one side of the first transfer support layer (100a), and the first substrate (80a) can be bonded to the other side of the first transfer support layer (100a) facing the one side.

[0051] A first wiring (140a) may be arranged on the periphery of the above-described surface of the first transfer support layer (100a). In some embodiments, a plurality of first wirings (140a) may be connected to each of the first sensing electrode patterns (145a). In some embodiments, the first wiring (140a) includes the same metal as the first metal pattern (115a), and the pressure-sensitive layer or pressure-sensitive pattern may be omitted on the first wiring (140a).

[0052] The first sensing electrode patterns (145a) may include a first metal pattern (115a) and a first pressure-sensitive pattern (135a). The first metal pattern (115a) and the first pressure-sensitive pattern (135a) may be sequentially laminated from the above-mentioned one surface of the first transfer support layer (100a).

[0053] The first metal pattern (115a) can be in contact with one surface of the first transfer support layer (100a). The first pressure-sensitive pattern (135a) can be in contact with one surface of the first metal pattern (115a).

[0054] In some embodiments, a plurality of first sensing electrode patterns (145a) may be spaced apart from each other to form an array of physically separated island patterns.

[0055] The second sensor structure (190b) may include a second substrate (80b), a second transfer support layer (100b), and second sensing electrode patterns (145b).

[0056] The second sensing electrode patterns (145b) are arranged on one side of the second transfer support layer (100b), and the second substrate (80b) can be bonded to the other side of the second transfer support layer (100b) facing the one side.

[0057] A second wiring (140b) may be arranged on the periphery of the above-described surface of the second transfer support layer (100b). In some embodiments, a plurality of second wirings (140b) may be connected to each of the second sensing electrode patterns (145b). The second wiring (140b) includes the same metal as the second metal pattern (115b), and the pressure-sensitive layer or pressure-sensitive pattern may be omitted on the second wiring (140b).

[0058] The second sensing electrode patterns (145b) may include a second metal pattern (115b) and a second pressure-sensitive pattern (135b). The second metal pattern (115b) and the second pressure-sensitive pattern (135b) may be sequentially laminated from the above-mentioned one surface of the second transfer support layer (100b).

[0059] The second metal pattern (115b) can be in contact with one surface of the second transfer support layer (100b). The second pressure-sensitive pattern (135b) can be in contact with one surface of the second metal pattern (115b).

[0060] In some embodiments, a plurality of second sensing electrode patterns (145b) may be spaced apart from each other to form an array of physically separated island patterns.

[0061] The first sensor structure (190a) and the second sensor structure (190b) may be combined such that the first sensing electrode patterns (145a) and the second sensing electrode patterns (145b) face each other in the thickness direction. According to exemplary embodiments, the first pressure-sensitive pattern (135a) and the second pressure-sensitive pattern (135b) may face each other while being spaced apart from each other by a predetermined distance by an air layer (170).

[0062] The first sensor structure (190a) and the second sensor structure (190b) can be fixed to each other by a coupling structure (160) through the first substrate (80a) and the second substrate (80b), respectively.

[0063] The bonding structure (160) may be formed along the edge of the pressure sensor or the edges of the substrates (80a, 80b). For example, the bonding structure (160) may include a structure capable of bonding a plurality of sheet members, such as a gasket. In some embodiments, the bonding structure (160) may include a sealant formed by dispensing a double-sided tape or a resin-based adhesive, for example.

[0064] The metal pattern (115) may include silver (Ag), gold (Au), copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), titanium (Ti), tungsten (W), niobium (Nb), tantalum (Ta), vanadium (V), iron (Fe), manganese (Mn), cobalt (Co), nickel (Ni), zinc (Zn), tin (Sn), or an alloy thereof.

[0065] In some embodiments, the metal pattern (115) is formed of the low-resistance metal or alloy described above, and may not include a transparent conductive oxide such as ITO or IZO. As described above, the pressure sensor may be positioned on the back side of the image display device and may not be visible to the user. Therefore, the sensing sensitivity can be improved by forming the metal pattern (115) of the metal or alloy described above, which has low resistance and high conductivity.

[0066] The wiring (140) may include the same metal or alloy as the metal pattern (115). The terminal portion of the wiring (140) may be connected to an external circuit structure, such as a printed circuit board, so that a driving current may be applied to the sensing electrode patterns (145). For example, a bonding pad for bonding connection with the printed circuit board may be formed at the terminal portion of the wiring (140).

[0067] The pressure-sensitive pattern (135) may be provided as a tunneling layer or tunneling pattern including quantum tunneling composites (QTC). For example, it may be formed using a QTC composition including a binder resin and tunneling particles. The binder resin may include a rubber or elastomeric material, and the tunneling particles may include metal particles capable of implementing a tunneling effect, such as nickel.

[0068] As described above, the first pressure-sensitive pattern (135a) and the second pressure-sensitive pattern (135b) are adjacent to each other and can face each other with an air layer (170) interposed therebetween in the thickness direction.

[0069] For example, when pressure is applied through the user's finger over the second substrate (80b), the first pressure-sensitive pattern (135a) and the second pressure-sensitive pattern (135b) may be locally pressed and come into contact with each other. Due to the tunneling effect occurring in the local area of ​​the first pressure-sensitive pattern (135a) and the second pressure-sensitive pattern (135b), current may be transmitted between the first sensing electrode pattern (145a) and the second sensing electrode pattern (145b), thereby generating an electrical signal.

[0070] As the substrate (80), for example, substrate materials and insulating film materials commonly used in image display devices can be used without particular limitation. For example, the substrate (80) may include polymeric materials such as cyclic olefin polymer (COP), polyethylene terephthalate (PET), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), cellulose acetate propionate (CAP), polyethersulfone (PES), cellulose triacetate (TAC), polycarbonate (PC), cyclic olefin copolymer (COC), polymethyl methacrylate (PMMA), etc. In some embodiments, the substrate (80) may include a glass substrate.

[0071] The transfer support layer (100) may serve as a separation layer for transferring the sensor structure and may serve as an intermediate support layer for forming the sensing electrode pattern (145). The transfer support layer (100) may include a carrier substrate (e.g., carrier glass) and an organic material having low peeling strength so that it can be easily peeled from the carrier substrate.

[0072] For example, the transfer support layer (100) may include polyacrylate, polymethacrylate (PMMA), polyimide, polyamide, polyvinyl alcohol, polyamic acid, polyolefin (e.g., PE, PP), polystyrene, polynorbornene, phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester (e.g., PET, PBT), polyarylate, cinnamate polymer, coumarin polymer, phthalimidine polymer, chalcone polymer, aromatic acetylene polymer, etc. These can be used alone or in combination of two or more.

[0073] In some embodiments, the transfer support layer (100) may have a multi-layer structure. For example, the transfer support layer (100) may include a separation layer to which the carrier substrate is bonded and a protective layer on which the sensing electrode patterns (145) are formed. The separation layer may include the organic material described above, and the protective layer may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0074] According to embodiments of the present invention, the widths of the metal pattern (115) and the pressure-sensitive pattern (135) included in the sensing electrode pattern (145) may be substantially the same. In some embodiments, the side surfaces of the metal pattern (115) and the pressure-sensitive pattern (135) may share substantially the same plane. For example, the side surfaces of the metal pattern (115) and the pressure-sensitive pattern (135) may be continuously connected to form a single plane.

[0075] The metal pattern (115) and the pressure-sensitive pattern (135) can share substantially the same etching surface through a micro-etching process. Accordingly, the width and pitch (e.g., line and space (L / S)) of the sensing electrode pattern (145) can be reduced, and a greater number of sensing electrode patterns (145) can be arranged in a limited area. Accordingly, the sensitivity and resolution of the pressure sensor can be enhanced.

[0076] In some embodiments, the width of the sensing electrode pattern (145) and the spacing between the sensing electrode patterns (145) may be 200 μm or less, or less than 200 μm, respectively. In one embodiment, the width of the sensing electrode pattern (145) and the spacing between the sensing electrode patterns (145) may be 180 μm or less, 150 μm or less, 100 μm or less, 80 μm or less, 70 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, or 30 μm or less.

[0077] The width of the sensing electrode pattern (145) and the spacing between the sensing electrode patterns (145) can be adjusted to 10 μm or more or 20 μm or more to ensure conductivity and reliability, respectively.

[0078] The width of the wiring (140) can also be adjusted within the above-described width range. In some embodiments, the width of the wiring (140) can be smaller than the width of the sensing electrode pattern (145).

[0079] According to the above-described embodiments, the transfer support layer (100) is positioned between the sensing electrode patterns (145) and the substrate (80), thereby sufficiently securing heat resistance and chemical resistance in the micro-etching process. Accordingly, the sensing electrode pattern (145) and wiring (140) having a micro-width and micro-pitch within the above-described range can be easily formed.

[0080] Figures 2 to 7 are schematic cross-sectional views illustrating a method for manufacturing a pressure sensor according to exemplary embodiments. Detailed descriptions of materials and structures substantially identical or similar to those described with reference to Figure 1 are omitted.

[0081] Referring to FIG. 2, a transfer support layer (100) and a metal layer (110) can be sequentially formed on a carrier substrate (90).

[0082] A first carrier substrate (90a) and a second carrier substrate (90b) may each be prepared. For example, the first carrier substrate (90a) and the second carrier substrate (90b) may each include carrier glass.

[0083] The transfer support layer (100) can be formed through a printing process, coating process, or deposition process such as spin coating, slit coating, or chemical vapor deposition (CVD) process to include the above-described organic polymer material and / or inorganic insulating material.

[0084] The metal layer (110) can be formed through a deposition process such as a chemical vapor deposition (CVD) process, a sputtering process, or a plating process to include the above-described metal or alloy.

[0085] Referring to FIG. 3, a photoresist pattern (120) can be formed on a metal layer (110), and a pressure-sensitive layer (130) can be formed.

[0086] According to exemplary embodiments, the photoresist pattern (120) may be formed on an area (wiring area) in which wiring is formed among the metal layer (110). The pressure-sensitive layer (130) may be formed on an area (sensor area) in which a sensing electrode pattern is formed among the metal layer (110).

[0087] A first photoresist pattern (120a) and a second photoresist pattern (120b) may be formed on the wiring regions of the first metal layer (110a) and the second metal layer (110b), respectively. A first pressure-sensitive layer (130a) and a second pressure-sensitive layer (130b) may be formed on the sensor regions of the first metal layer (110a) and the second metal layer (110b), respectively.

[0088] The photoresist pattern (120) can be formed through an exposure and development process after forming a photoresist layer. The pressure-sensitive layer (130) can be formed through a printing process, such as a screen printing process, using the tunneling material described above.

[0089] Referring to FIG. 4, the pressure-sensitive layer (130) can be etched to form pressure-sensitive patterns (135). Accordingly, a first pressure-sensitive pattern (135a) can be formed on the sensor area of ​​the first metal layer (110a), and a second pressure-sensitive pattern (135b) can be formed on the sensor area of ​​the second metal layer (110b).

[0090] In some embodiments, the pressure sensitive layer (130) may be etched through a laser etching process.

[0091] Referring to FIG. 5, an etching process of a metal layer (110) may be performed. According to exemplary embodiments, the metal layer (110) may be etched using a photoresist pattern (120) and a pressure-sensitive pattern (135) together as an etching mask. Accordingly, wires (140a) and metal patterns (115) may be formed in the wire region and the sensor region of the metal layer (110), respectively. The wires (140) and the metal pattern (115) may be formed substantially simultaneously through substantially the same wet etching process.

[0092] By the etching process described above, first wires (140a) and first metal patterns (115a) can be formed on the first transfer support layer (100a) from the first metal layer (110a). Second wires (140b) and second metal patterns (115b) can be formed on the second transfer support layer (100b) from the second metal layer (110b).

[0093] Accordingly, first sensing electrode patterns (145a) including a first metal pattern (115a) and a first pressure-sensitive pattern (135a), and second sensing electrode patterns (145b) including a second metal pattern (115b) and a second pressure-sensitive pattern (135b) can be formed on the first transfer support layer (100a) and the second transfer support layer (100b), respectively.

[0094] As described above, the metal pattern (115) can be formed through an etching process using a pressure-sensitive pattern (135). The etching process can be integrated with a photolithography process using a photoresist pattern (120). Therefore, the sensing electrode patterns (145) with the above-described fine line width and fine pitch can be effectively formed.

[0095] In addition, since the pressure-sensitive pattern (135) is used as an etching mask for the metal pattern (115), the pressure-sensitive pattern (135) and the metal pattern (115) share substantially the same width, and a fine patterning process can be implemented.

[0096] After the etching process described above, the photoresist pattern (120) can be removed through an ashing process and / or a strip process.

[0097] Referring to Fig. 6, a transfer process utilizing a transfer support layer (100) can be performed. According to exemplary embodiments, the first carrier substrate (90a) and the second carrier substrate (90b) can be peeled or separated from the first transfer support layer (100a) and the second transfer support layer (100b), respectively.

[0098] A substrate (80) can be bonded or combined to the separated peeling surface of the carrier substrate (90) of the transfer support layer (100). Accordingly, the first substrate (80a) can be bonded to the lower surface (peeling surface) of the first transfer support layer (100a), and the second substrate (80b) can be bonded to the lower surface (peeling surface) of the second transfer support layer (100b).

[0099] In some embodiments, a point-adhesive layer may be interposed between the transfer support layer (100) and the substrate (80) to bond the transfer support layer (100) and the substrate (80) to each other.

[0100] Thereafter, a protective film (150) may be attached on the sensing electrode patterns (145) to protect the sensing electrode patterns (145). A first protective film (150a) may be attached on the first sensing electrode patterns (145a), and a second protective film (150b) may be attached on the second sensing electrode patterns (145b).

[0101] Again, referring to FIG. 1, a first sensor structure (190a) and a second sensor structure (190b) can be obtained, each including a substrate (80), a transfer support layer (100), and sensing electrode patterns (145) and wires (140) sequentially laminated by the above-described processes.

[0102] The first protective film (150a) and the second protective film (150b) can be removed from the first sensor structure (190a) and the second sensor structure (190b), respectively. Thereafter, the first sensor structure (190a) and the second sensor structure (190b) can be combined so that the first pressure-sensitive patterns (135a) of the first sensing electrode patterns (145a) and the second pressure-sensitive patterns (135b) of the second sensing electrode patterns (145b) face each other.

[0103] As described above, the first sensor structure (190a) and the second sensor structure (190b) can be combined so that the first pressure-sensitive patterns (135a) and the second pressure-sensitive patterns (135b) are spaced apart at a predetermined distance by using the combined structure (160) with the air layer (170) therebetween.

[0104] Figures 7 to 9 are schematic cross-sectional views illustrating a method for manufacturing a pressure sensor according to exemplary embodiments. A detailed description of the process, which is substantially the same as that described with reference to Figures 2 to 6, is omitted.

[0105] Referring to FIG. 7, as described with reference to FIG. 2, a transfer support layer (100) and a metal layer (110) can be sequentially formed on a carrier substrate (90).

[0106] Thereafter, a portion of the metal layer (110) in the wiring area may be partially etched or removed to form a wiring (140). Accordingly, a first wiring (140a) may be formed on the first transfer support layer (100a), and the remaining portion of the first metal layer (110a) may remain in the sensor area. A second wiring (140b) may be formed on the second transfer support layer (100b), and the remaining portion of the second metal layer (110b) may remain in the sensor area.

[0107] Referring to FIG. 8, pressure-sensitive patterns (135) can be formed on a portion of the metal layer (110) on the sensor area. For example, a pressure-sensitive layer can be formed on the metal layer (110), and the pressure-sensitive layer can be patterned through laser etching to form pressure-sensitive patterns (135).

[0108] Accordingly, first pressure-sensitive patterns (135a) can be formed on the first metal layer (110a), and second pressure-sensitive patterns (135b) can be formed on the second metal layer (110b).

[0109] Referring to FIG. 9, the pressure-sensitive patterns (135) can be used as an etching mask to pattern the metal layer (110) through, for example, a wet etching process. Accordingly, the metal patterns (115) can be formed.

[0110] First sensing electrode patterns (145a), each including a first metal pattern (115a) and a first pressure-sensitive pattern (135a), may be formed on the first transfer support layer (100a). Second sensing electrode patterns (145b), each including a second metal pattern (115b) and a second pressure-sensitive pattern (135b), may be formed on the second transfer support layer (100b). Accordingly, a first sensor structure (190a) and a second sensor structure (190b) may be formed.

[0111] Thereafter, as described with reference to FIG. 6 and FIG. 1, the first sensor structure (190a) and the second sensor structure (190b) can be combined with each other through a transfer process and a bonding process to form a pressure sensor.

[0112] According to the embodiments of the present invention described above, a micro-etching process including a photolithography process can be stably performed through a transfer / lamination process utilizing a carrier substrate (90) and a transfer support layer (100).

[0113] For example, by using a carrier substrate (90), transfer for performing multiple unit processes including a deposition process, laser etching, and photolithography process can be stably performed, and microelectrode patterns of a pressure sensor can be formed with high reliability on a thin film-type transfer support layer (100).

[0114] Fig. 10 is a schematic cross-sectional view illustrating an image display device according to exemplary embodiments. In Fig. 10, the detailed structure of the pressure sensor (50) is omitted for convenience of explanation.

[0115] Referring to FIG. 10, the image display device may include a display panel (200) and a touch sensor (270) sequentially stacked on a pressure sensor (50).

[0116] The pressure sensor (50) may include the structure and configuration described with reference to FIG. 1. The pressure sensor (50) may be disposed under the display panel (200) and may be disposed on the back side of the image display device.

[0117] For example, the display panel (200) can be laminated on the pressure sensor (50) via the first point adhesive layer (202).

[0118] The display panel (200) may include a pixel electrode (210), a pixel defining film (220), a display layer (230), a counter electrode (240), and an encapsulation layer (250) arranged on a panel substrate (205).

[0119] A pixel circuit including a thin film transistor (TFT) is formed on a panel substrate (205), and an insulating film covering the pixel circuit may be formed. A pixel electrode (210) may be electrically connected to, for example, a drain electrode of the TFT on the insulating film.

[0120] In some embodiments, the panel substrate (205) includes a flexible resin such as polyimide, in which case the image display device can be provided as a flexible display.

[0121] A pixel defining film (220) can be formed on the insulating film to expose the pixel electrode (210) and define a pixel area. A display layer (230) is formed on the pixel electrode (210), and the display layer (230) can include, for example, a liquid crystal layer or an organic light-emitting layer.

[0122] A counter electrode (240) may be disposed on the pixel definition film (220) and the display layer (230). The counter electrode (240) may be provided as, for example, a common electrode or cathode of an image display device. An encapsulation layer (250) for protecting the display panel (200) may be laminated on the counter electrode (240).

[0123] A touch sensor (270) may be laminated on the display panel (200), for example, through a second point-adhesive layer (260). The touch sensor (270) may include, for example, a capacitive sensor of a mutual capacitance type or a self-capacitance type. The touch sensor (270) may be arranged on the front side of the image display device. Therefore, the sensing electrode of the touch sensor may include a transparent conductive oxide with high transmittance (for example, ITO, etc.) so that it can be recognized by the user.

[0124] The window substrate (290) can be laminated on the touch sensor (270) via, for example, a third point adhesive layer (280).

[0125] In some embodiments, an optical layer, such as a polarizing layer, may be further included between the window substrate (290) and the touch sensor (270), or between the touch sensor (270) and the display panel (200).

Claims

1. Warrior support base; and A pressure sensor comprising sensing electrode patterns arranged on one surface of the transfer support layer, each of which includes a metal pattern and a pressure-sensitive pattern having a side continuous with a side of the metal pattern.

2. A pressure sensor according to claim 1, further comprising a substrate bonded to the other surface opposite to the one surface of the transfer support layer.

3. In claim 2, the transfer support layer includes a first transfer support layer and a second transfer support layer, The above substrate includes a first substrate bonded to the other surface of the first transfer support layer and a second substrate bonded to the other surface of the second transfer support layer, The metal pattern includes a first metal pattern arranged on one surface of the first transfer support layer and a second metal pattern arranged on one surface of the second transfer support layer, The pressure-sensitive pattern includes a first pressure-sensitive pattern formed on the first metal pattern and a second pressure-sensitive pattern formed on the second metal pattern, A pressure sensor, wherein the sensing electrode patterns each include first sensing electrode patterns including the first metal pattern and the first pressure-sensitive pattern, and second sensing electrode patterns including the second metal pattern and the second pressure-sensitive pattern.

4. In claim 3, a first sensor structure is defined by the first substrate, the first transfer support layer, and the first sensing electrode patterns, and a second sensor structure is defined by the second substrate, the second transfer support layer, and the second sensing electrode patterns. A pressure sensor in which the first sensor structure and the second sensor structure are coupled so that the first pressure-sensitive patterns and the second pressure-sensitive patterns face each other.

5. A pressure sensor according to claim 4, further comprising an air layer interposed between the first sensing electrode patterns and the second sensing electrode patterns.

6. A pressure sensor according to claim 1, wherein the pressure-sensitive pattern comprises a quantum tunneling composite material (QTC).

7. A pressure sensor according to claim 1, wherein the metal pattern is in contact with the one surface of the transfer support layer, and the pressure-sensitive pattern is formed directly on the upper surface of the metal pattern.

8. A pressure sensor according to claim 1, further comprising wires formed at one end of the transfer support layer and connected to the metal patterns.

9. A pressure sensor according to claim 8, wherein the width of the metal pattern is 200 μm or less.

10. A pressure sensor according to claim 9, wherein the width of the wiring is smaller than the width of the metal pattern.

11. A pressure sensor according to claim 9, wherein the width of the pressure-sensitive pattern is the same as the width of the metal pattern.

12. The pressure sensor of claim 1; and An image display device comprising a display panel laminated on the pressure sensor.

13. A step of sequentially forming a transfer support layer, a metal layer having a wiring region, and a sensor region on a carrier substrate; forming pressure sensitive patterns on the sensor area of ​​the metal layer; and A method for manufacturing a pressure sensor, comprising a step of forming metal patterns by etching the metal layer through an etching process using the pressure-sensitive patterns as a mask.

14. In claim 13, a step of forming a photoresist pattern on the wiring area of ​​the metal layer; and A method for manufacturing a pressure sensor, further comprising a step of forming a wiring by etching the metal layer through an etching process using the photoresist pattern as an etching mask.

15. A method for manufacturing a pressure sensor according to claim 14, wherein the wiring and the metal patterns are formed simultaneously through the same etching process.

16. A method for manufacturing a pressure sensor according to claim 14, wherein the pressure-sensitive patterns are selectively formed on the sensor area of ​​the metal layer after the step of forming the wiring.

17. In claim 13, after the step of forming the metal patterns, a step of peeling the carrier substrate from the transfer support layer; and A method for manufacturing a pressure sensor, comprising the step of bonding a substrate to a peeling surface of the carrier substrate of the transfer support layer.

18. In claim 13, the step of forming the pressure-sensitive patterns comprises: A step of forming a pressure-sensitive layer on the sensor area of ​​the metal layer; and A method for manufacturing a pressure sensor, comprising a step of patterning the pressure-sensitive layer through laser etching.

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