Plasma treatment device and substrate treatment device

Abstract

Provided is a technique with which it is possible to recover a substance flowing out from a substrate treatment space. A plasma treatment device according to the present invention comprises a chamber having a plasma treatment space, and a plasma viewport attached to the chamber. The plasma viewport includes a first window, a second window disposed between the first window and the plasma treatment space, a third window disposed between the first window and the second window, and a lattice structure disposed between the second window and the third window.

Description

Plasma processing apparatus and substrate processing apparatus

[0001] SUMMARY OF THE INVENTION Exemplary embodiments of the present disclosure relate to plasma processing apparatuses and substrate processing apparatuses.

[0002] Japanese Patent Application Laid-Open No. 2003-129999 discloses a technique for providing a plasma viewport for high-temperature environments in a semiconductor processing apparatus.

[0003] Special Publication No. 2022-545274

[0004] The present disclosure provides a technique that can recover materials that flow out of a substrate processing space.

[0005] In one exemplary embodiment of the present disclosure, a plasma processing apparatus comprises a chamber having a plasma processing space and a plasma viewport attached to the chamber, the plasma viewport including a first window, a second window disposed between the first window and the plasma processing space, a third window disposed between the first window and the second window, and a lattice structure disposed between the second window and the third window.

[0006] According to one exemplary embodiment of the present disclosure, a technique can be provided that can collect particles discharged from a substrate processing space.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 2 is a diagram for explaining an example of the configuration of a plasma processing apparatus. FIG. 3 is a diagram for explaining an example of the configuration of a plasma viewport. FIG. 4 is a diagram for explaining an example of the configuration of a frame of the plasma viewport. FIG. 5 is a diagram for explaining an example of the configuration of the plasma viewport, viewing the first window from the second window side. FIG. 6 is a diagram for explaining an example of an Octapeak lattice structure. FIG. 7 is a diagram for explaining an example of an BiTriangle lattice structure. FIG. 8 is a diagram for explaining an example of a Dodecahedron lattice structure. FIG. 9 is a diagram for explaining an example of a QuadDiameter lattice structure. FIG. 10 is a diagram for explaining an example of a Star lattice structure. FIG. 11 is a diagram for explaining an example of a TriDiameter lattice structure. FIG. 12 is a diagram for explaining another example of the configuration of a plasma viewport. FIG. 13 is a diagram for explaining another example of the configuration of a plasma viewport, viewing the first window from the second window side. FIG. 14 is a diagram for explaining another example of the configuration of a plasma processing apparatus.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a chamber having a plasma processing space; and a plasma viewport attached to the chamber, the plasma viewport including a first window, a second window positioned between the first window and the plasma processing space, a third window positioned between the first window and the second window, and a lattice structure positioned between the second window and the third window.

[0010] In one exemplary embodiment, the first window comprises a quartz material.

[0011] In one exemplary embodiment, the third window comprises a sapphire material.

[0012] In one exemplary embodiment, the second window has a plurality of through holes communicating with the plasma processing space.

[0013] In one exemplary embodiment, the lattice structure comprises a ceramic material or an anodized aluminum material.

[0014] In one exemplary embodiment, the lattice structure has a porosity of between 1% and 90%.

[0015] In one exemplary embodiment, the lattice structure comprises at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiametral, Star, and TriDiametral.

[0016] In one exemplary embodiment, the lattice structure is positioned so that it overlaps the first window when the first window is viewed from the second window.

[0017] In one exemplary embodiment, the lattice structure is positioned to surround a space that overlaps with the first window when the first window is viewed from the second window.

[0018] In one exemplary embodiment, a substrate processing apparatus is provided, comprising: a chamber having a substrate processing space; and a viewport attached to the chamber, the viewport including a frame defining a first space communicating with the substrate processing space, a first window, and a lattice structure positioned within the first space between the first window and the substrate processing space.

[0019] In one exemplary embodiment, the first window is made of quartz, sapphire, YAG, and Y ２ O ３ The material comprises a material selected from the group consisting of:

[0020] In one exemplary embodiment, the lattice structure comprises a ceramic material or an anodized aluminum material.

[0021] In one exemplary embodiment, the lattice structure has a porosity of between 1% and 90%.

[0022] In one exemplary embodiment, the lattice structure comprises at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiametral, Star, and TriDiametral.

[0023] In one exemplary embodiment, a substrate processing apparatus is provided, comprising: a chamber having a substrate processing space; a member having a first space communicating with the substrate processing space; and a lattice structure disposed within the first space.

[0024] In one exemplary embodiment, the apparatus further comprises an exhaust system in communication with the substrate processing space through the first space.

[0025] In one exemplary embodiment, the lattice structure comprises a ceramic material or an anodized aluminum material.

[0026] In one exemplary embodiment, the lattice structure has a porosity of between 1% and 90%.

[0027] In one exemplary embodiment, the lattice structure comprises at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiametral, Star, and TriDiametral.

[0028] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0029] <Example of Plasma Processing System> FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0030] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0031] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0032] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0033] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (also simply referred to as the "chamber"), a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0034] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0035] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0036] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0037] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0038] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0039] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0040] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0041] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0042] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0043] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0044] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0045] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0046] In one embodiment, the plasma processing apparatus 1 further includes a plasma viewport 200 and a detector 201 .

[0047] In one embodiment, the plasma viewport 200 is attached to the sidewall 10 a of the chamber 10 .

[0048] 3 is a diagram illustrating an example configuration of the plasma viewport 200. In one embodiment, the plasma viewport 200 has a first window 250, a second window 251, a third window 252, a frame 253, and a lattice structure 254.

[0049] The second window 251 , the lattice structure 254 , the third window 252 and the first window 250 are arranged in this order from the plasma processing space 10 s inside the chamber 10 toward the detector 201 outside the chamber 10 .

[0050] The second window 251 has a plurality of through-holes 300 communicating with the plasma processing space 10s. Each through-hole 300 may have a diameter of 0.1 mm to 10 mm. In this example, the sidewall 10a of the chamber 10 has an inner sidewall 310 and an outer sidewall 311. The inner sidewall 310 is a deposit shield that prevents reaction products generated during plasma processing from adhering to the outer sidewall 311. The inner sidewall 310 may be removable from the chamber 10. In one embodiment, the second window 251 is attached to the inner sidewall 310. The second window 251 may be detachable from the inner sidewall 310. The second window 251 is positioned to face the plasma processing space 10s between the substrate support 11 and the showerhead 13.

[0051] In one embodiment, the frame 253 holds the lattice structure 254, the third window 252, and the first window 250. The frame 253 is attached to the outer sidewall 311 of the chamber 10. The frame 253 may be detachable from the outer sidewall 311.

[0052] In one embodiment, the frame 253 has a cylindrical portion 350 disposed on the plasma processing space 10s side and a flange portion 351 disposed on the detector 201 side.

[0053] In one embodiment, the cylindrical portion 350 has a first portion 370 configured to define a first space 360 ​​communicating with the plasma processing space 10s, a window holder 371 configured to hold the third window 252, and a second portion 372 configured to define a second space 361 between the third window 252 and the first window 250. The first space 360 ​​defined by the first portion 370 communicates with the plasma processing space 10s via the through-hole 300 of the second window 251. The window holder 371 is configured to hold the third window 252 between the first space 360 ​​and the second space 361. The window holder 371 may be configured to allow the third window 252 to be detachably attached.

[0054] In one embodiment, the flange portion 351 is configured to hold the first window 250. The flange portion 351 may have a fixing mechanism for fixing the frame 253 to the outer sidewall 311 of the chamber 10. The flange portion 351 may be configured to allow the first window 250 to be detachable.

[0055] 4, the cylindrical portion 350 may have a sidewall 350a that forms a substantially rectangular opening OP1. The flange portion 351 may have a substantially rectangular plate shape.

[0056] The third window 252 is made of quartz, sapphire, YAG, and Y ２ O ３ In one embodiment, the third window 252 includes a sapphire material. The third window 252 may include a sapphire material as a primary component or may be formed of sapphire. The third window 252 is optically transparent. The third window 252 may have a rectangular or circular plate shape.

[0057] The first window 250 may be made of quartz, sapphire, YAG, or Y ２ O ３In one embodiment, the first window 250 includes a quartz material. The first window 250 may include a quartz material as a main component, and may be formed of quartz. The first window 250 is optically transparent. The first window 250 may have a rectangular or circular plate shape. The first window 250 may have a larger diameter than the third window 252. The second window 251, the third window 252, and the first window 250 are arranged such that their window surfaces are parallel to each other and are arranged substantially linearly.

[0058] The lattice structure 254 is disposed in the first space 360 ​​between the second window 251 and the third window 252 in the frame 253. As shown in FIG. 5 , the lattice structure 254 is disposed so as to overlap the first window 250 when the first window 250 is viewed from the second window 251 (the plasma processing space 10s) (when the lattice structure 254 is projected horizontally onto the first window 250 as viewed from the side). In one embodiment, in the example shown in FIGS. 3 to 5 , the lattice structure 254 is disposed throughout the first space 360. The lattice structure 254 is disposed so as to cover the entire surface of the opening OP1. The lattice structure 254 includes a ceramic material or an anodized aluminum material. The lattice structure 254 has a porosity of 1% to 90%.

[0059] The lattice structure 254 may have at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiameter, Star, and TriDiameter. The lattice structure is a structure that creates a three-dimensional object by periodically arranging a plurality of unit cells.

[0060] 6A and 6B are diagrams illustrating an example of an Octapeak lattice structure 254-1. As shown in FIG. 6A, the Octapeak lattice structure 254-1 has a unit cell 254a in which eight arc-shaped beams are connected to form a peak at the center of each face of a regular hexahedron. As shown in FIG. 6B, the lattice structure 254-1 has a three-dimensional shape in which multiple unit cells 254a are regularly arranged and connected to each other in the vertical, horizontal, and depth directions.

[0061] 7A and 7B are diagrams illustrating an example of a BiTriangle lattice structure 254-2. As shown in FIG. 7A, the BiTriangle lattice structure 254-2 has a unit cell 254b formed by coupling two triangular beams together. As shown in FIG. 7B, the lattice structure 254-2 has a three-dimensional shape in which a plurality of unit cells 254b are regularly arranged and connected to each other in the vertical, horizontal, and depth directions.

[0062] 8A and 8B are diagrams illustrating an example of a Dodecahedron lattice structure 254-3. As shown in FIG. 8A, the Dodecahedron lattice structure 254-3 has a unit cell 254c having a dodecagonal beam as a basic structure. As shown in FIG. 8B, the lattice structure 254-3 has a three-dimensional shape in which a plurality of unit cells 254c are regularly arranged and connected to each other in the vertical, horizontal, and depth directions.

[0063] 9A and 9B are diagrams illustrating an example of a quad-diameter lattice structure 254-4. As shown in FIG. 9A, the quad-diameter lattice structure 254-4 has a unit cell 254d formed by connecting four straight beams at their centers. As shown in FIG. 9B, the lattice structure 254-4 has a three-dimensional shape in which a plurality of unit cells 254d are regularly arranged and connected to each other in the vertical, horizontal, and depth directions.

[0064] 10 is a diagram illustrating an example of a Star lattice structure 254-5. As shown in (a) of FIG. 10, the Star lattice structure 254-5 has a unit cell 254e in which multiple beams with acute angles protruding outward are coupled to each other. As shown in (b) of FIG. 10, the lattice structure 254-5 has a three-dimensional shape in which multiple unit cells 254e are regularly arranged and connected to each other in the vertical, horizontal, and depth directions.

[0065] 11A and 11B are diagrams illustrating an example of a tri-diameter lattice structure 254-6. As shown in FIG. 11A, the tri-diameter lattice structure 254-6 has a unit cell 254f formed by connecting three straight beams at their centers. As shown in FIG. 11B, the lattice structure 254-6 has a three-dimensional shape in which a plurality of unit cells 254f are regularly arranged and connected to each other in the vertical, horizontal, and depth directions.

[0066] The lattice structure 254 is not limited to the examples shown in Figures 6 to 11, and may have other lattice structures. The lattice structure 254 may be arranged so as to completely overlap the first window 250 when the first window 250 is viewed from the second window 251, or so as to partially overlap the first window 250.

[0067] In the example shown in FIG. 2 , the detector 201 is disposed outside the outer sidewall 311. The detector 201 may be disposed near the first window 250. The detector 201 may be configured to optically measure the state of the plasma processing space 10s through the plasma viewport 200. The detector 201 may be at least one selected from the group consisting of a camera, an optical emission spectrometer (OES), and a spectrometer. The detector 201 may or may not be included as part of the plasma processing apparatus 1. The detector 201 may be installed during use or may be permanently installed. The detector 201 may be configured to measure the wear state and contaminant adhesion state of the chamber 10 or its components. The detector 201 may also detect other detection targets.

[0068] <Example of Plasma Processing> Plasma processing is performed in the above-described plasma processing apparatus 1. The plasma processing includes an etching process in which a film on a substrate W is etched using plasma. In one embodiment, the plasma processing is performed by the control unit 2 in the plasma processing apparatus 1.

[0069] In the plasma processing apparatus 1 shown in FIG. 2, first, the substrate W is carried into the chamber 10 by a transport arm, placed on the substrate support portion 11 by a lifter, and held on the substrate support portion 11 by suction.

[0070] Next, a processing gas is supplied to the plasma processing space 10s through the shower head 13 by the gas supply unit 20. The processing gas supplied at this time includes a gas that generates activated species necessary for etching the substrate W.

[0071] A source RF signal for generating plasma is supplied to the upper electrode and / or lower electrode by the RF power supply 31 of the plasma generating unit 12. A bias signal for attracting ion components in the plasma to the substrate is supplied to the lower electrode by the RF power supply 31 or DC power supply 32. The atmosphere in the plasma processing space 10s is exhausted from the gas exhaust port 10e, and the pressure inside the plasma processing space 10s is reduced. In this way, plasma is generated from the processing gas above the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0072] During plasma processing, the detector 201 may optically detect the state of the plasma processing space 10s. Light in the plasma processing space 10s passes through the second window 251, the lattice structure 254, the third window 252, and the first window 250 of the plasma viewport 200 in this order and is detected by the detector 201. During plasma processing, deposition and etching components are generated in the plasma processing space 10s by the processing gas and plasma. Some of these components may enter the frame 253 through the through-hole 300 of the second window 251. In one embodiment, the components that enter the frame 253 are consumed by depositing on the lattice structure 254, which has a large surface area, or by scraping (wearing) the lattice structure 254. In this way, the deposition and etching components in the plasma processing space 10s are prevented from reaching the third window 252 or the first window 250.

[0073] According to this exemplary embodiment, the plasma processing apparatus 1 includes a chamber 10 having a plasma processing space 10s and a plasma viewport 200 attached to the chamber 10. The plasma viewport 200 includes a first window 250, a second window 251 disposed between the first window 250 and the plasma processing space 10s, a third window 252 disposed between the first window 250 and the second window 251, and a lattice structure 254 disposed between the second window 251 and the third window 252. This allows deposition and etching components that have flowed out of the plasma processing space 10s to be consumed by the lattice structure 254, thereby recovering materials that have flowed out of the substrate processing space. As a result, deposition of deposits on the first window 250 and the third window 252 is reduced, and light attenuation at the first window 250 and the third window 252 is reduced. Furthermore, wear of the first window 250 and the third window 252 is reduced, and light stably passes through the first window 250 and the third window 252. As a result, light can be detected sufficiently and stably in the detector 201. Furthermore, the replacement cycle and lifespan of the first window 250 and the third window 252 are extended.

[0074] 12 and 13 , the lattice structure 254 may be arranged to surround a space overlapping with the first window 250 when the first window 250 is viewed from the second window 251. For example, the lattice structure 254 may be arranged in a ring shape along the sidewall 350a that forms the opening OP1 of the frame 253, forming a space OP2 in the center where the lattice structure 254 is not present. This example improves the rate at which light reaches the detector 201 from the plasma processing space 10s. Note that the lattice structure 254 does not need to be arranged around the entire circumference of the sidewall 350a of the frame 253, but may be arranged only around a portion of the circumference.

[0075] Although the above exemplary embodiment has been applied to a capacitively coupled plasma processing apparatus, the present invention is not limited to this and may be applied to other plasma processing apparatuses. For example, the present invention may be applied to an inductively coupled plasma processing apparatus instead of a capacitively coupled plasma processing apparatus.

[0076] In the above embodiment, the plasma processing apparatus 1 has been described as an example, but the present invention is not limited to this. For example, the present invention may also be applied to a substrate processing apparatus that does not use plasma. In this case, the substrate processing apparatus includes a chamber having a substrate processing space and a viewport attached to the chamber. The viewport includes a frame defining a first space communicating with the substrate processing space, a first window, and a lattice structure disposed in the first space between the first window and the substrate processing space.

[0077] In one embodiment, the substrate processing apparatus may have a lattice structure in addition to the viewport. In this case, the substrate processing apparatus includes a chamber having a substrate processing space, a member having a first space communicating with the substrate processing space, and a lattice structure disposed within the first space. For example, as shown in FIG. 14 , the plasma processing apparatus 1 may have a gas outlet 10e as a member having the first space communicating with the plasma processing space 10s, and an exhaust system 40, and a lattice structure 400 disposed in the gas outlet 10e. The lattice structure 400 may be similar to the lattice structure 254 shown in FIGS. 6 to 11 . In one embodiment, for example, the plasma processing apparatus 1 may have a tube or recess as a member having the first space communicating with the plasma processing space 10s, and a measuring instrument such as a pressure gauge communicating with the first space, and the lattice structure may be disposed in the tube or recess.

[0078] Embodiments of the present disclosure further include the following aspects.

[0079] (Supplementary Note 1) A plasma processing apparatus comprising: a chamber having a plasma processing space; and a plasma viewport attached to the chamber, wherein the plasma viewport includes: a first window; a second window disposed between the first window and the plasma processing space; a third window disposed between the first window and the second window; and a lattice structure disposed between the second window and the third window.

[0080] (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein the first window includes a quartz material.

[0081] (Supplementary Note 3) The plasma processing apparatus according to Supplementary Note 1 or 2, wherein the third window includes a sapphire material.

[0082] (Supplementary Note 4) The plasma processing apparatus according to any one of Supplementary Notes 1 to 3, wherein the second window has a plurality of through holes communicating with the plasma processing space.

[0083] (Supplementary Note 5) The plasma processing apparatus according to any one of Supplementary Notes 1 to 4, wherein the lattice structure includes a ceramic material or an anodized aluminum material.

[0084] (Supplementary Note 6) The plasma processing apparatus according to any one of Supplementary Notes 1 to 5, wherein the lattice structure has a porosity of 1% to 90%.

[0085] (Supplementary Note 7) The plasma processing apparatus according to any one of Supplementary Notes 1 to 6, wherein the lattice structure has at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiameter, Star, and TriDiameter.

[0086] (Supplementary Note 8) The plasma processing apparatus according to any one of Supplementary Notes 1 to 7, wherein the lattice structure is arranged to overlap with the first window when the first window is viewed from the second window.

[0087] (Supplementary Note 9) The plasma processing apparatus according to any one of Supplementary Notes 1 to 8, wherein the lattice structure is arranged to surround a space overlapping with the first window when the first window is viewed from the second window.

[0088] (Supplementary Note 10) A substrate processing apparatus comprising: a chamber having a substrate processing space; and a viewport attached to the chamber, wherein the viewport includes: a frame defining a first space communicating with the substrate processing space; a first window; and a lattice structure disposed within the first space between the first window and the substrate processing space.

[0089] (Supplementary Note 11) The first window is made of quartz, sapphire, YAG, and Y ２ O ３11. The substrate processing apparatus of claim 10, comprising a material selected from the group consisting of:

[0090] (Supplementary Note 12) The substrate processing apparatus according to Supplementary Note 10 or 11, wherein the lattice structure includes a ceramic material or an anodized aluminum material.

[0091] (Supplementary Note 13) The substrate processing apparatus according to any one of Supplementary Notes 10 to 12, wherein the lattice structure has a porosity of 1% to 90%.

[0092] (Supplementary Note 14) The substrate processing apparatus according to any one of Supplementary Notes 10 to 13, wherein the lattice structure has at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiameter, Star, and TriDiameter.

[0093] (Supplementary Note 15) A substrate processing apparatus comprising: a chamber having a substrate processing space; a member having a first space communicating with the substrate processing space; and a lattice structure disposed within the first space.

[0094] (Supplementary Note 16) The substrate processing apparatus according to Supplementary Note 15, further comprising an exhaust system communicating with the substrate processing space via the first space.

[0095] (Supplementary Note 17) The substrate processing apparatus according to Supplementary Note 15 or 16, wherein the lattice structure includes a ceramic material or an anodized aluminum material.

[0096] (Supplementary Note 18) The substrate processing apparatus according to any one of Supplementary Notes 15 to 17, wherein the lattice structure has a porosity of 1% to 90%.

[0097] (Supplementary Note 19) The substrate processing apparatus according to any one of Supplementary Notes 15 to 18, wherein the lattice structure has at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiameter, Star, and TriDiameter.

[0098] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0099] REFERENCE SIGNS LIST 1: plasma processing apparatus, 10: chamber, 10a: sidewall, 10s: plasma processing space, 11: substrate support, 200: plasma viewport, 201: detector, 250: first window, 251: second window, 252: third window, 253: frame, 254: lattice structure, W: substrate

Claims

1. A plasma processing apparatus comprising: a chamber having a plasma processing space; and a plasma viewport attached to the chamber, wherein the plasma viewport includes: a first window; a second window disposed between the first window and the plasma processing space; a third window disposed between the first window and the second window; and a lattice structure disposed between the second window and the third window.

2. The plasma processing apparatus of claim 1, wherein the first window comprises a quartz material.

3. The plasma processing apparatus of claim 2, wherein the third window comprises a sapphire material.

4. The plasma processing apparatus according to claim 3, wherein said second window has a plurality of through holes communicating with said plasma processing space.

5. The plasma processing apparatus of any one of claims 1 to 4, wherein the lattice structure comprises a ceramic material or an anodized aluminum material.

6. The plasma processing apparatus of claim 5, wherein the lattice structure has a porosity of 1% to 90%.

7. The plasma processing apparatus according to claim 6, wherein the lattice structure has at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiameter, Star, and TriDiameter.

8. The plasma processing apparatus according to claim 5, wherein the lattice structure is positioned so as to overlap the first window when the first window is viewed from the second window.

9. The plasma processing apparatus according to claim 5, wherein the lattice structure is arranged so as to surround a space overlapping with the first window when the first window is viewed from the second window.

10. A substrate processing apparatus comprising: a chamber having a substrate processing space; and a viewport attached to the chamber, the viewport including: a frame defining a first space communicating with the substrate processing space; a first window; and a lattice structure disposed within the first space between the first window and the substrate processing space.

11. The first window is made of quartz, sapphire, YAG, and Y ２ O ３ The substrate processing apparatus of claim 10 , comprising a material selected from the group consisting of:

12. The substrate processing apparatus of claim 10 or 11, wherein the lattice structure comprises a ceramic material or an anodized aluminum material.

13. The substrate processing apparatus of claim 12, wherein the lattice structure has a porosity of 1% to 90%.

14. The substrate processing apparatus of claim 12, wherein the lattice structure has at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiametral, Star, and TriDiametral.

15. A substrate processing apparatus comprising: a chamber having a substrate processing space; a member having a first space communicating with the substrate processing space; and a lattice structure disposed within the first space.

16. The substrate processing apparatus of claim 15, further comprising an exhaust system in communication with the substrate processing space through the first space.

17. The substrate processing apparatus of claim 15 or 16, wherein the lattice structure comprises a ceramic material or an anodized aluminum material.

18. The substrate processing apparatus of claim 17, wherein the lattice structure has a porosity of 1% to 90%.

19. The substrate processing apparatus of claim 17, wherein the lattice structure comprises at least one lattice structure selected from the group consisting of Octapeak, BiTriangle, Dodecahedron, QuadDiametral, Star, and TriDiametral.

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