Vacuum interconnection system and method for sample exchange between mocvd and mbe
Patent Information
- Application Number
- PCT/CN2024/090886
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-03-07
- Filing Date
- 2024-04-30
- Publication Date
- 2025-10-02
AI Technical Summary
In existing technologies, sample interaction between MOCVD and MBE systems requires manual operation, which makes the wafer surface susceptible to oxidation or adsorption contamination. In addition, the transfer process is inefficient and risky, making it difficult to achieve automated transmission in high-temperature and high-vacuum environments.
A vacuum interconnected system including an MOCVD growth chamber, an MOCVD transition chamber, a flip chamber, an MBE transition chamber, and an MBE growth chamber was designed. A robot and a lifting assembly were used to achieve contactless transfer and flipping of wafers. Each chamber was isolated by an isolation valve. A magnetically coupled robot operated under high temperature and high vacuum, supporting the clean and efficient transfer of carriers of different specifications.
This eliminates the need to contact the wafer growth surface, reduces the risk of surface damage and contamination, avoids extrusion stress in the clamping peripheral area, and enables two-way automatic sample transfer between MOCVD and MBE systems, improving process performance and production efficiency.
Smart Images
Figure CN2024090886_02102025_PF_FP_ABST
Abstract
Description
A vacuum interconnection system and method for MOCVD and MBE sample interaction
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] This application is based on and claims priority to a Chinese patent application with an application date of March 7, 2024, application number 202410262284.5, and invention name “A vacuum interconnection system and method for interaction between MOCVD and MBE samples”. The full text of the Chinese patent application is hereby cited in this application as a part of this application.
Technical field
[0003] The present invention relates to crystal growth equipment and process methods, and in particular to a vacuum interconnection system and method for interaction between MOCVD and MBE samples. [Background Technology]
[0004] Metal Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE) have become the mainstream epitaxial technologies for the preparation of compound semiconductor materials and their device structures, and are widely used in the development and large-scale production of optoelectronics and microelectronic chips. MOCVD technology uses organic compounds of group III and group II elements and hydrides of group V and VI elements as crystal growth source materials, and performs vapor phase epitaxy on the substrate in the form of thermal decomposition reaction. The vacuum degree of the growth chamber is around 100Torr. It has high speed, low cost, good control flexibility and process repeatability, and is suitable for high-temperature growth materials represented by nitrides and phosphides. MBE technology is a process under ultra-high vacuum conditions (usually better than 10 -10 In MOCVD (Metal-Oriented Biomaterials), the elements that make up the crystal are heated in a corresponding beam source furnace to form a directional atomic or molecular beam, which is incident on a heated substrate for thin film growth. This method features high material purity, controllable thickness, composition, and doping at the single-atom level, and smooth surfaces and interfaces. It is suitable for low-temperature growth of materials such as arsenides and antimonides. However, both MOCVD and MBE have inherent drawbacks: MOCVD uses a gaseous source, which inevitably introduces impurities, resulting in poor vacuum and relatively low film quality. MBE, due to its high vacuum, has a slow growth rate, high operating costs, and inferior mass production capabilities compared to MOCVD.
[0005] MOCVD and MBE have many overlaps in practical applications. The alternating growth method of MOCVD+MBE can achieve complementary advantages. For example, high-quality active layers or low-resistance ohmic contact layers are grown by MBE, while thicker transition layers or waveguide layers are grown by MOCVD. This can greatly improve the growth quality and efficiency of materials, and at the same time provide a new platform for the large-scale manufacturing of high-performance device materials such as GaN RF devices, long-wave VCSELs, DFB lasers, and deep ultraviolet optoelectronic devices.
[0006] MOCVD and MBE are independent systems, with significantly different wafer handling configurations. MOCVD wafers are positioned growth-side up, with backside contact placed within individual wafer carriers. These rotating wafer carriers, driven by air flotation, are then placed within large graphite plates driven by motors. MBE wafers are positioned growth-side down, with edge contact placed within individual wafer positions on molybdenum holders. Due to inherent process and vacuum level differences, MOCVD graphite plates and MBE holders are not interchangeable. Currently, sample transfer between the two systems is manual and requires exposure to the atmosphere. The sample surface is susceptible to oxidation and adsorption of contaminants such as particles, water vapor, and organic matter, resulting in reduced crystal quality. Additional etching and cleaning processes are also required during transfer. Transferring samples between the two systems requires breaking and then pumping the vacuum, as well as cooling and then heating the sample. This process is time-consuming, inefficient, and carries high risk, hindering the full potential of both systems.
[0007] Chinese patent document CN215628426U proposes a vacuum interconnection system for interaction between MOCVD and MBE samples. However, the technical solution does not specify a specific method for implementing sample interaction. Chinese patent document CN219132311U further discloses that sample interaction is achieved through a vacuum high-temperature multi-axis manipulator, and two clamps moving in opposite directions are used to clamp the peripheral area of the wafer. However, in actual applications, the wafer is placed in the grooves of the MOCVD graphite disk or the MBE molybdenum tray, and there is no space around the wafer for the clamps to clamp or release the wafer. The multi-axis manipulator is required to have X-axis, Y-axis, and Z-axis translational movement as well as X-axis and Z-axis rotation functions, and the motors or cylinders used to provide driving force are all installed in the sample transfer chamber. In practice, it is difficult for a motor or cylinder to meet 10 -7 Torr vacuum and 200℃ high temperature environment requirements.
[0008] Chinese patent document CN116377572A proposes a vacuum interconnected sample transfer system for MOCVD and MBE sample interaction. The system uses an electrostatic adsorption chuck on a first robotic arm to grasp and flip the wafer, while a second robotic arm grasps and transfers the wafer carrier. Taking MOCVD to MBE sample transfer as an example, the electrostatic adsorption chuck non-contactly grasps the front of the wafer from the MOCVD graphite plate and flips it, placing the wafer growth surface downward on the sample platform of the center correction module. The wafer is then pushed by a clamping assembly to correct the center position. Finally, the electrostatic adsorption chuck grasps the back of the wafer and transfers it to the MBE molybdenum tray. During the position correction process, the wafer growth surface will inevitably slide and rub against the sample platform, which is inconsistent with the original intention of using an electrostatic adsorption chuck to avoid wafer surface damage and contact contamination. Furthermore, vacuum electrostatic adsorption chucks typically have a maximum temperature resistance of 100°C, making it difficult to meet high-temperature sample transfer requirements.
[0009] [Summary of the invention]
[0010] The technical problem to be solved by the present invention is to overcome the shortcomings of the existing technology and provide a vacuum interconnection system for the interaction between MOCVD and MBE samples, which does not require contact with the wafer growth surface, reduces the risk of wafer surface damage and contact contamination, does not require clamping the peripheral area of the wafer, and reduces the risk of fragmentation caused by extrusion stress.
[0011] The present invention further provides a method for interacting MOCVD and MBE samples.
[0012] In order to solve the above technical problems, the present invention adopts the following technical solutions:
[0013] A vacuum interconnection system for MOCVD and MBE sample interaction comprises an MOCVD growth chamber, an MOCVD transition chamber, a flip chamber, an MBE transition chamber and an MBE growth chamber, which are docked in sequence. Adjacent chambers are isolated from each other by isolation valves. The MOCVD transition chamber is provided with an MOCVD transition chamber manipulator. The flip chamber is provided with a transfer disk, a filter disk, a transfer component that can be lifted and rotated, a first lifting assembly that is detachably connected to the transfer disk or a molybdenum holder, and a second lifting assembly that is detachably connected to the filter disk. The transfer disk is provided with a plurality of wafer carrier positions, the filter disk is provided with a plurality of wafer filter through-holes, the diameter of the wafer filter through-holes being larger than the diameter of the wafer and smaller than the diameter of the wafer carrier, the upper and lower surfaces of the filter disk are respectively provided with placement portions for placing the molybdenum holder and the transfer disk, a manipulator box is docked on one side of the flip chamber, a flip manipulator is provided in the manipulator box, and the MBE transition chamber is provided with an MBE transition chamber manipulator.
[0014] In some embodiments of the present invention, a first positioning structure is provided between the transfer plate and the filter plate, and a second positioning structure is provided between the filter plate and the molybdenum support.
[0015] In some embodiments of the present invention, the first positioning structure includes a first positioning notch provided on the transfer disk and a second positioning notch provided on the filter disk;
[0016] In some embodiments of the present invention, the second positioning structure includes a positioning post provided on the filter plate and a positioning hole provided on the molybdenum support; or, the second positioning structure includes a positioning hole provided on the filter plate and a positioning post provided on the molybdenum support.
[0017] In some embodiments of the present invention, the first lifting assembly and the second lifting assembly each include a plurality of lifting rods, and the transfer plate, the molybdenum support, and the filter plate are provided with slots for docking with the lifting rods.
[0018] In some embodiments of the present invention, a boss is provided on the outer periphery of the placement portion, and the wafer filtering through hole is located in the placement portion.
[0019] In some embodiments of the present invention, the MOCVD transition chamber robot, the MBE transition chamber robot, the flip robot, the transfer component, the first lifting assembly and the second lifting assembly all support high-temperature movement of 800° C. in a vacuum environment.
[0020] In some embodiments of the present invention, the driving part of the MOCVD transition chamber robot is located outside the MOCVD transition chamber and is driven by magnetic coupling, and the driving part of the MBE transition chamber robot is located outside the MBE transition chamber and is driven by magnetic coupling.
[0021] In some embodiments of the present invention, the flip robot comprises an upper gripper and a lower gripper that are spaced apart.
[0022] A method for MOCVD and MBE sample interaction, comprising the following steps:
[0023] S1. Connect the MOCVD growth chamber, MOCVD transition chamber, and inversion chamber, evacuate the three chambers to a first target vacuum level, and transfer the wafers and wafer carriers on the graphite plate in the MOCVD growth chamber to the wafer carrier positions on the transfer plate by the MOCVD transition chamber robot, isolating the MOCVD growth chamber, MOCVD transition chamber, and inversion chamber;
[0024] S2, the second lifting assembly drives the filter plate to drop onto the transfer plate, and the wafer filter through-hole is aligned with the wafer carrier position;
[0025] S3, the turning chamber is evacuated to the second target vacuum degree, the turning chamber and the MBE transition chamber are connected, and the MBE transition chamber manipulator takes the empty molybdenum tray from the MBE transition chamber. If the empty molybdenum tray is already in the turning state, step S5 is directly performed; if the empty molybdenum tray is in the unturned state, the MBE transition chamber manipulator transfers the empty molybdenum tray to the transfer component and then withdraws it, and the transfer component rotates a certain angle to align the sheet taking position with the turning manipulator;
[0026] S4, the flip manipulator takes out the empty molybdenum tray from the transfer component and retreats a certain distance, then flips the empty molybdenum tray 180° and returns it to the transfer component. The transfer component rotates a certain angle to align the film-taking position with the MBE transition chamber manipulator, and the MBE transition chamber manipulator retrieves the flipped empty molybdenum tray;
[0027] S5. The transfer component rises, and the first lifting assembly rises to drive the transfer plate and the filter plate to fit with the MBE transition chamber robot. The MBE transition chamber robot transfers the empty molybdenum tray to the filter plate, aligns the wafer position on the molybdenum tray with the wafer filter through-hole, and the MBE transition chamber robot withdraws;
[0028] S6, the flip robot simultaneously clamps the transfer plate, the filter plate and the molybdenum support, the first lifting assembly descends and separates from the transfer plate, the flip robot retreats a certain distance and then flips 180 degrees, and the wafer on the wafer carrier passes through the wafer filter through-hole and falls into the wafer position on the lowest molybdenum support;
[0029] S7. The flipping robot returns the molybdenum support, filter plate and transfer plate. The first lifting assembly rises to hold the molybdenum support. The flipping robot withdraws. The second lifting assembly rises to drive the filter plate and the transfer plate above to separate from the molybdenum support. The MBE transition chamber robot clamps the molybdenum support. The first lifting assembly descends to separate from the molybdenum support. The MBE transition chamber robot retrieves the molybdenum support. Isolate the flipping chamber and the MBE transition chamber.
[0030] In some embodiments of the present invention, the steps are further included:
[0031] S8, the MBE transition chamber is evacuated to the third target vacuum degree, the MBE transition chamber and the MBE growth chamber are connected, the MBE transition chamber manipulator transfers the molybdenum tray to the MBE growth chamber, the MBE transition chamber and the MBE growth chamber are isolated, the MBE growth chamber is evacuated to the fourth target vacuum degree, and the MBE process begins;
[0032] S9. After the MBE process is completed, the MBE growth chamber and the MBE transition chamber are connected, the MBE transition chamber manipulator takes out the molybdenum tray from the MBE growth chamber, isolates the MBE growth chamber and the MBE transition chamber, connects the MBE transition chamber and the flip chamber, the MBE transition chamber manipulator transfers the molybdenum tray to the flip chamber, the first lifting assembly rises to hold the molybdenum tray, the MBE transition chamber manipulator withdraws, isolates the MBE transition chamber and the flip chamber, the second lifting assembly descends to drive the filter plate and the transfer plate above to fall on the molybdenum tray, the flip manipulator simultaneously clamps the molybdenum tray, the filter plate and the transfer plate, the first lifting assembly descends and separates from the molybdenum tray, the second lifting assembly descends and separates from the filter plate, the flip manipulator retreats a certain distance and then flips 180°, and the wafer on the molybdenum tray passes through the wafer filter through-hole and falls into the wafer carrier of the lowest transfer plate;
[0033] S10, the flip robot returns the transfer plate, the filter plate and the molybdenum support, the first lifting assembly holds the transfer plate, the flip robot withdraws, the second lifting assembly rises to drive the filter plate and the molybdenum support above it to separate from the transfer plate, connecting the MOCVD growth chamber, MOCVD transition chamber and flip chamber, the MOCVD transition chamber robot transfers the wafers on the transfer plate in the flip chamber together with the wafer carrier to the graphite plate in the MOCVD growth chamber, isolating the MOCVD growth chamber, MOCVD transition chamber and flip chamber.
[0034] Compared with the prior art, the advantages of the present invention are:
[0035] The vacuum interconnection system for MOCVD and MBE sample interaction disclosed in the present invention does not require contact with the wafer growth surface during wafer transfer and flipping, thereby reducing the risk of wafer surface damage and contact contamination. It does not require clamping the peripheral area of the wafer, thereby reducing the risk of fragmentation caused by extrusion stress. It can realize clean, efficient and safe transfer of wafers between carriers of different specifications, and realize two-way automatic sample transfer from MOCVD to MBE or MBE to MOCVD, truly realizing MOCVD+MBE vacuum interconnection and process interconnection, giving full play to the advantages of the two devices, significantly improving process performance and production efficiency, and providing possibilities for the development of special materials and new devices.
[0036] The method for MOCVD and MBE sample interaction disclosed in the present invention realizes the clean, efficient and safe transfer of wafers between carriers of different specifications, realizes two-way automatic interaction of samples from MOCVD to MBE or MBE to MOCVD, truly realizes MOCVD+MBE vacuum interconnection and process interconnection, fully utilizes the advantages of the two devices, significantly improves process performance and production efficiency, and provides possibilities for the development of special materials and new devices.
Brief Description of the Drawings
[0037] FIG1 is a schematic structural diagram of a vacuum interconnection system for interaction between MOCVD and MBE samples according to the present invention.
[0038] FIG2 is a schematic structural diagram of a graphite disk according to the present invention.
[0039] FIG3 is a schematic structural diagram of the molybdenum support according to the present invention.
[0040] FIG4 a is a schematic structural diagram of the upper surface of the transfer disk according to the present invention.
[0041] FIG4 b is a schematic structural diagram of the lower surface of the transfer plate according to the present invention.
[0042] FIG5 a is a schematic structural diagram of the upper surface of the filter disc according to the present invention.
[0043] FIG5 b is a schematic structural diagram of the lower surface of the filter disc according to the present invention.
[0044] FIG6 is a schematic structural diagram of the transfer component according to the present invention.
[0045] FIG. 7 is a schematic diagram of the process of transferring the wafer on the graphite plate together with the wafer carrier to the transfer plate according to the present invention.
[0046] FIG8 is a schematic diagram of the process of positioning the filter plate and the transfer plate of the present invention.
[0047] FIG9 a is a schematic diagram of transferring an empty molybdenum support to a transfer component according to the present invention.
[0048] FIG9 b is a schematic diagram of the process in which the transfer component of the present invention rotates 90° and the flipping manipulator flips the molybdenum tray 180°. FIG.
[0049] FIG10 is a schematic diagram of the process of an empty molybdenum tray falling onto a filter disc after flipping over according to the present invention.
[0050] FIG. 11 is a schematic diagram showing a process in which the flip robot of the present invention flips the combined carrier plate 180°.
[0051] FIG12 is a schematic diagram of the process of transferring the flipped molybdenum tray and wafer to the MBE transition chamber according to the present invention.
[0052] The numbers in the figure represent: 100, wafer; 101, wafer carrier; 102, graphite disk; 200, molybdenum support; 201, positioning hole; 202, slot; 203, wafer position; 1, MOCVD growth chamber; 2, MOCVD transition chamber; 21, MOCVD transition chamber robot; 3, flip chamber; 31, transfer plate; 311, wafer carrier position; 312, first positioning notch; 32, filter plate; 321, wafer filter through hole; 322, placement part; 323, second positioning notch; 324, positioning column; 325, boss; 33, transfer component; 34, first lifting assembly; 35, second lifting assembly; 4, MBE transition chamber; 41, MBE transition chamber robot; 5, MBE growth chamber; 6, robot box; 61, flip robot; 611, upper clamp; 612, lower clamp; 7, plug-in valve. [Specific implementation method]
[0053] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0054] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature identified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.
[0055] In the present invention, unless otherwise expressly specified or limited, the term "connection" and other terms should be understood in a broad sense. For example, it can mean fixed connection, detachable connection, or integration; it can mean mechanical connection or electrical connection; it can mean direct connection or indirect connection through an intermediate medium; it can mean internal communication between two elements or interaction between two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0056] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0057] Example 1
[0058] Figures 1 to 6 illustrate an embodiment of a vacuum interconnection system for MOCVD and MBE sample interaction according to the present invention. The vacuum interconnection system for MOCVD and MBE sample interaction according to this embodiment comprises an MOCVD growth chamber 1, an MOCVD transition chamber 2, a tumble chamber 3, a manipulator box 6, an MBE transition chamber 4, and an MBE growth chamber 5. The MOCVD growth chamber 1, MOCVD transition chamber 2, tumble chamber 3, MBE transition chamber 4, and MBE growth chamber 5 are sequentially connected. The manipulator box 6 is located on one side of the tumble chamber 3. The straight line along which the MOCVD transition chamber 2, tumble chamber 3, and MBE transition chamber 4 lie is perpendicular to the straight line along which the manipulator box 6 and tumble chamber 3 lie. Of course, in other embodiments, the chambers may be arranged in other different ways. Adjacent chambers are preferably isolated from each other by gate valves 7. When the gate valves 7 are open, the adjacent chambers are connected. Conversely, when the gate valves 7 are closed, the adjacent chambers are isolated, i.e., no longer connected. As can be seen, each chamber is provided with a vacuum control module including a vacuum pump, a vacuum gauge, an air charging pipeline, etc., and the turning chamber 3 and the robot box 6 can share the vacuum control module.
[0059] The vacuum degree of the MBE growth chamber is usually 5×10 -11 Torr~10 -10 Torr, the vacuum degree of MBE transition chamber 4 is usually 5×10 -10 Torr~10 -8 Torr, the vacuum degree of the flip chamber 3 and the robot box 6 is usually 5×10 -9 Torr~10 -7 Torr, the vacuum degree of MOCVD transition chamber 2 is usually 5×10 -8 Torr~5×10 -2 Torr, the vacuum degree of MOCVD growth chamber 1 is usually 10 -2 Torr to 100 Torr. Each chamber is equipped with a different combination of vacuum pumps, including but not limited to cryopumps, ion pumps, molecular pumps, and dry pumps, depending on the required vacuum level. Each chamber is equipped with a different vacuum gauge, including but not limited to Pirani gauges, bare ion gauges, and full-range vacuum gauges, depending on the required vacuum level. The gate valve 7 used to isolate each chamber meets the requirements of ultra-high vacuum applications and supports high-temperature operation up to 200°C.
[0060] The MOCVD transition chamber 2 is equipped with a MOCVD transition chamber manipulator 21, and the MBE transition chamber 4 is equipped with an MBE transition chamber manipulator 41. Both the MOCVD transition chamber manipulator 21 and the MBE transition chamber manipulator 41 have 360-degree rotation and telescopic transport capabilities, supporting high-temperature movement up to 800°C in a vacuum environment. Preferably, the MOCVD transition chamber manipulator 21 and the MBE transition chamber manipulator 41 are made of high-purity and high-strength materials capable of withstanding temperatures up to 800°C, including but not limited to stainless steel, tantalum, molybdenum, and ceramic. The MOCVD transition chamber manipulator 21 and the MBE transition chamber manipulator 41 can be driven by a motor or cylinder located outside the vacuum chamber and driven by magnetic coupling. Positioning of the MOCVD transition chamber manipulator 21 and the MBE transition chamber manipulator 41 utilizes, but is not limited to, positioning holes 201, first positioning notches 312, second positioning notches 323, and positioning posts 324. Positioning methods such as photoelectric sensors or CCD camera vision can be used.
[0061] The inversion chamber 3 is equipped, from bottom to top, with a transfer tray 31, a filter tray 32, a liftable and rotatable transfer member 33, a first lift assembly 34 for lifting and separating the transfer tray 31 or the molybdenum tray 200, and a second lift assembly 35 for lifting and separating the filter tray 32. The first and second lift assemblies 34, 35 preferably utilize first and second support rods, with slots 202 corresponding to the support rods defined in the transfer tray 31, filter tray 32, and the molybdenum tray 200. This structure is simple and compact, facilitating automatic docking and separation in high-temperature environments. Of course, in other embodiments, the lift assemblies may also utilize other configurations.
[0062] The transfer tray 31, first support rod, filter tray 32, second support rod, and transfer component 33 are preferably made of high-purity and high-strength materials capable of withstanding temperatures of 800°C, including but not limited to stainless steel, tantalum, molybdenum, and ceramic. The lifting and rotation of the first and second support rods, as well as the lifting and rotation of the transfer component 33, are driven by motors or cylinders located outside the vacuum chamber and driven by magnetic coupling. Each set of first and second support rods can consist of two, three, four, or other numbers, driven synchronously by motors or cylinders and equipped with mechanical limit stops and / or sensors for precise positioning.
[0063] A wafer carrier position 311 is provided on the transfer plate 31 for carrying the wafer carrier 101 (for example, it can be a commonly used small graphite plate), a wafer filter hole 321 is provided on the filter plate 32, and a wafer position 203 is provided on the molybdenum tray 200 for carrying the wafer 100. The diameter of the wafer filter hole 321 is larger than the diameter of the wafer 100 and smaller than the diameter of the wafer carrier 101, so that during the flipping process of the combined carrier (transfer plate 31, filter plate 32 and molybdenum tray 200), the wafer 100 can pass through but the wafer carrier 101 cannot pass through the wafer filter hole 321.
[0064] The wafer carrier position 311 on the transfer plate 31, the wafer filter through-hole 321 on the filter plate 32 and the wafer position 203 on the molybdenum holder 200 correspond one to one with respect to the size, quantity and position of the wafers 100 supported. The transfer plate 31, the filter plate 32 and the molybdenum holder 200 are manufactured as a set (the specifications of which may be different from those of the MOCVD large graphite plate), which can be 8 6-inch pieces, 3 8-inch pieces, 4 6-inch pieces, 9 4-inch pieces, etc. By adjusting the carrier specifications, it can be compatible with various types of MBE systems and MOCVD systems.
[0065] The diameter of the filter plate 32 is larger than the diameter of the transfer plate 31 and the diameter of the molybdenum tray 200. Bosses 325 that match the outer edge sizes of the molybdenum tray 200 and the transfer plate 31 are respectively provided above and below the filter plate 32. A placement portion 322 is formed on the inner side of the boss 325. When the molybdenum tray 200 and the transfer plate 31 are located in the placement portion 322, the boss 325 can be used for circumferential positioning of the molybdenum tray 200 and the transfer plate 31 to prevent the molybdenum tray 200 and the transfer plate 31 from sliding in all directions. The filter plate 32 and the transfer plate 31 are precisely positioned through but not limited to the second positioning notch 323 on the filter plate 32 and the first positioning notch 312 on the transfer plate 31, so that the wafer filtering through hole 321 on the filter plate 32 corresponds one-to-one with the wafer carrier position 311 on the transfer plate 31, and the filter plate 32 and the molybdenum support 200 are precisely positioned through but not limited to the positioning column 324 on the filter plate 32 and the positioning hole 201 on the molybdenum support 200, so that the wafer filtering through hole 321 on the filter plate 32 corresponds one-to-one with the wafer position 203 on the molybdenum support 200.
[0066] The flipping robot 61 is placed in the robot box 6. The front end of the flipping robot 61 is provided with an upper clamping claw 611 and a lower clamping claw 612, which can clamp and release a single carrier or a combination of carriers. The structure is simple and reasonable. The flipping robot 61 has 180° flipping and telescopic transmission functions, and supports 800°C high-temperature movement in a vacuum environment.
[0067] The flipping robot 61 is constructed of high-purity, high-strength materials capable of withstanding temperatures of 800°C, including but not limited to stainless steel, tantalum, molybdenum, and ceramic. The flipping robot 61 is preferably driven by a motor or cylinder located outside the vacuum chamber and driven by magnetic coupling. Positioning of the flipping robot 61 utilizes, but is not limited to, positioning slots; other mechanical positioning methods, photoelectric sensor positioning, or CCD camera visual positioning may also be employed.
[0068] Example 2
[0069] 7 to 12 show an embodiment of the method for MOCVD and MBE sample interaction according to the present invention.
[0070] S1. Connect the MOCVD growth chamber 1, MOCVD transition chamber 2 and flip chamber 3, evacuate the three chambers to a vacuum level that reaches or exceeds the set first vacuum level, and the MOCVD transition chamber robot 21 takes out the wafer carriers 101 (with wafers 100, and the growth surface of the wafer 100 faces upward) one by one from the graphite disk 102 of the MOCVD growth chamber 1 and sends them to the wafer carrier position 311 on the transfer disk 31 of the flip chamber 3. Repeat the process until all the wafer carriers 101 are transferred, and isolate the MOCVD growth chamber 1, MOCVD transition chamber 2 and flip chamber 3.
[0071] S2, the second support rod descends and drives the filter plate 32 to fall onto the transfer plate 31, and the filter plate 32 and the transfer plate 31 are precisely positioned through the boss 325 on the edge of the filter plate 32, the second positioning notch 312 on the filter plate 32, and the first positioning notch 312 on the transfer plate 31.
[0072] S3. The turning chamber 3 is evacuated to a second vacuum degree that reaches or exceeds the set vacuum degree, and the turning chamber 3 and the MBE transition chamber 4 are connected. The MBE transition chamber manipulator 41 delivers the empty molybdenum tray 200 from other MBE chambers to the transfer component 33 in the turning chamber 3 and then withdraws. The transfer component 33 rotates a certain angle (the specific angle is determined according to the chamber layout, as mentioned above, it is 90° in this embodiment) to the film taking position and aligns with the turning robot 61.
[0073] S4. The flipping robot 61 grabs the empty molybdenum tray 200 from the transfer component 33, retreats to a suitable position, flips the empty molybdenum tray 200 180°, and then returns it to the transfer component 33. The transfer component 33 rotates a certain angle to the film-taking position and aligns it with the direction of the MBE transition chamber robot 41 (if the MBE sampling chamber initially contains an empty molybdenum tray 200 that has been flipped, this step can be omitted).
[0074] S5. The MBE transition chamber manipulator 41 retrieves the flipped empty molybdenum tray 200 and withdraws. The transfer component 33 rises to make room. The first support rod rises to drive the transfer plate 31 and the upper filter plate 32 to a height suitable for the MBE transition chamber manipulator 41 to pick up and place the sheets. The MBE transition chamber manipulator 41 delivers the flipped empty molybdenum tray 200 to the filter plate 32. The precise positioning between the filter plate 32 and the molybdenum tray 200 is achieved through the boss 325 on the edge of the filter plate 32, the positioning column 324 on the filter plate and the positioning hole 201 on the molybdenum tray 200. The MBE transition chamber manipulator 41 withdraws.
[0075] S6. The flipping robot 61 clamps the tightly fitting combination carrier (from top to bottom: the molybdenum support 200, the filter plate 32 and the transfer plate 31), the first support rod descends and separates from the transfer plate 31, and the flipping robot 61 retreats to a suitable position to flip the combination carrier 180°. The wafer 100 in the wafer carrier 101 on the transfer plate 31 passes through the wafer filter hole 321 and falls onto the wafer position 203 of the lowest molybdenum support 200. At this time, the wafer growth surface is facing downward.
[0076] S7, the flip robot 61 sends the combined carrier (at this time, the transfer plate 31, the filter plate 32 and the molybdenum tray 200 from top to bottom) back, the first support rod rises to support the combined carrier (specifically the molybdenum tray 200), the flip robot 61 withdraws, the second support rod rises to drive the filter plate 32 and the upper transfer plate 31 to separate from the molybdenum tray 200, the MBE transition chamber robot 41 clamps the molybdenum tray 200 (with the wafer 100 and the growth surface of the wafer 100 facing down), the first support rod descends to separate from the molybdenum tray 200, the MBE transition chamber robot 41 retrieves the molybdenum tray 200, isolates the flip chamber 3 and the MBE transition chamber 4, and completes the sample transfer from MOCVD to MBE.
[0077] S8. The MBE transition chamber 4 is evacuated to a third vacuum degree that is set or higher, and the MBE transition chamber 4 and the MBE growth chamber 5 are connected. The MBE transition chamber robot 41 sends the molybdenum tray 200 and the wafer 100 into the MBE growth chamber 5, isolates the MBE transition chamber 4 and the MBE growth chamber 5, and the MBE growth chamber 5 is evacuated to a fourth vacuum degree that is set or higher, and the MBE process starts.
[0078] S9. After the MBE process is completed, the MBE growth chamber 5 and the MBE transition chamber 4 are connected. The MBE transition chamber manipulator 41 takes out the molybdenum holder 200 from the MBE growth chamber 5, isolates the MBE growth chamber 5 and the MBE transition chamber 4, connects the MBE transition chamber 4 and the turnover chamber 3, and the MBE transition chamber manipulator 41 returns the molybdenum holder 200 to the turnover chamber 3. The first support rod rises to hold the molybdenum holder 200, and the MBE transition chamber manipulator 41 withdraws to isolate the MBE transition chamber 4 and the turnover chamber 3. The second support rod descends to drive the filter plate 32 and the upper The square transfer tray 31 falls onto the molybdenum tray 200, and the flip robot 61 clamps the tightly fitting combination carrier (from top to bottom: the transfer tray 31, the filter tray 32 and the molybdenum tray 200), the first support rod descends and separates from the molybdenum tray 200, the second lifting assembly 35 descends and separates from the filter tray 32, and the flip robot 61 retreats to a suitable position to flip the combination carrier 180°. The wafer 100 in the molybdenum tray 200 passes through the wafer filter through-hole 321 and falls onto the wafer carrier 101 on the lowest transfer tray 31. At this time, the growth surface of the wafer 100 faces upward.
[0079] S10, the flip robot 61 returns the combined carrier (from top to bottom, the molybdenum tray 200, the filter tray 32 and the transfer tray 31), the first support rod rises to support the combined carrier (specifically the transfer tray 31), the flip robot 61 withdraws, the second support rod rises to drive the filter tray 32 and the upper molybdenum tray 200 to separate from the transfer tray 31, connecting the flip chamber 3, MOCVD transition chamber 2 and MOCVD growth chamber 1, the MOCVD transition chamber robot 21 takes out the wafer carriers 101 (with wafers 100 and the growth surface of the wafer 100 facing up) one by one from the transfer tray 31 in the flip chamber 3 and sends them to the graphite tray 102 in the MOCVD growth chamber 1, and repeats the process until all the wafer carriers 101 are transferred, and the MOCVD growth chamber 1, MOCVD transition chamber 2 and flip chamber 3 are isolated, thereby completing the sample transfer from MBE to MOCVD.
[0080] During the transfer and flipping process of the wafer 100, the present invention does not need to contact the growth surface of the wafer 100, thereby reducing the risk of surface damage and contact contamination of the wafer 100. It does not need to clamp the peripheral area of the wafer 100, thereby reducing the risk of fragmentation caused by extrusion stress. It can realize the clean, efficient and safe transfer of wafers 100 between carriers of different specifications, realize two-way automatic sample transfer from MOCVD to MBE or MBE to MOCVD, truly realize MOCVD+MBE vacuum interconnection and process interconnection, give full play to the advantages of the two devices, significantly improve process performance and production efficiency, and provide possibilities for the development of special materials and new devices.
[0081] Although the present invention has been disclosed above with reference to preferred embodiments, this is not intended to limit the present invention. Any person skilled in the art can, without departing from the scope of the technical solution of the present invention, utilize the technical content disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the scope of protection of the technical solution of the present invention.
Claims
1. A vacuum interconnection system for MOCVD and MBE sample interaction, characterized by: The invention comprises an MOCVD growth chamber (1), an MOCVD transition chamber (2), a turnover chamber (3), an MBE transition chamber (4) and an MBE growth chamber (5) which are connected in sequence. Adjacent chambers are isolated from each other by isolation valves. The MOCVD transition chamber (2) is provided with an MOCVD transition chamber manipulator (21). The turnover chamber (3) is provided with a transfer plate (31), a filter plate (32), a transfer component (33) which can be lifted and rotated, a first lifting component (34) which can be detachably connected to the transfer plate (31) or a molybdenum support (200), and a second lifting component (35) which can be detachably connected to the filter plate (32). The disk (31) is provided with a plurality of wafer carrier positions (311), the filter disk (32) is provided with a plurality of wafer filter holes (321), the diameter of the wafer filter holes (321) is larger than the diameter of the wafer (100) and smaller than the diameter of the wafer carrier (101), the upper surface and the lower surface of the filter disk (32) are respectively provided with placement portions (322) for placing the molybdenum support (200) and the transfer disk (31), a manipulator box (6) is docked at one side of the turnover chamber (3), a turnover manipulator (61) is provided in the manipulator box (6), and the MBE transition chamber (4) is provided with an MBE transition chamber manipulator (41).
2. The vacuum interconnection system for MOCVD and MBE sample interaction according to claim 1, characterized in that: A first positioning structure is provided between the transfer disk (31) and the filter disk (32), and a second positioning structure is provided between the filter disk (32) and the molybdenum support (200).
3. The vacuum interconnection system for MOCVD and MBE sample interaction according to claim 2, characterized in that: The first positioning structure comprises a first positioning notch (312) provided on the transfer disk (31) and a second positioning notch (323) provided on the filter disk (32); The second positioning structure includes a positioning column (324) provided on the filter disc (32) and a positioning hole (201) provided on the molybdenum support (200); or the second positioning structure includes a positioning hole (201) provided on the filter disc (32) and a positioning column (324) provided on the molybdenum support (200).
4. The vacuum interconnection system for MOCVD and MBE sample interaction according to claim 1, characterized in that: The first lifting assembly (34) and the second lifting assembly (35) both include a plurality of lifting rods, and slots (202) for docking with the lifting rods are provided on the transfer plate (31), the molybdenum support (200) and the filter plate (32).
5. The vacuum interconnection system for MOCVD and MBE sample interaction according to claim 1, characterized in that: A boss (325) is provided on the outer periphery of the placement portion (322), and the wafer filtering through hole (321) is located in the placement portion (322).
6. The vacuum interconnection system for MOCVD and MBE sample interaction according to any one of claims 1 to 5, characterized in that: The MOCVD transition chamber manipulator (21), the MBE transition chamber manipulator (41), the flip manipulator (61), the transfer component (33), the first lifting assembly (34) and the second lifting assembly (35) all support high-temperature movement of 800° C. in a vacuum environment.
7. The vacuum interconnection system for MOCVD and MBE sample interaction according to any one of claims 1 to 5, characterized in that: The driving part of the MOCVD transition chamber manipulator (21) is located outside the MOCVD transition chamber (2) and is driven by magnetic coupling, and the driving part of the MBE transition chamber manipulator (41) is located outside the MBE transition chamber (4) and is driven by magnetic coupling.
8. The vacuum interconnection system for MOCVD and MBE sample interaction according to any one of claims 1 to 5, characterized in that: The turning robot (61) comprises an upper clamping claw (611) and a lower clamping claw (612) which are arranged at intervals.
9. A method for MOCVD and MBE sample interaction, characterized in that The following steps are involved: S1, connecting the MOCVD growth chamber (1), the MOCVD transition chamber (2) and the turnover chamber (3), evacuating the three chambers to a first target vacuum degree, and transferring the wafers (100) on the graphite disk (102) in the MOCVD growth chamber (1) together with the wafer carrier (101) to the wafer carrier positions (311) of the transfer disk (31) by the MOCVD transition chamber robot (21), isolating the MOCVD growth chamber (1), the MOCVD transition chamber (2) and the turnover chamber (3); S2, the second lifting assembly (35) drives the filter plate (32) to drop onto the transfer plate (31), and the wafer filter through hole (321) is aligned with the wafer carrier position (311); S3, the turning chamber (3) is evacuated to a second target vacuum degree, the turning chamber (3) and the MBE transition chamber (4) are connected, and the MBE transition chamber manipulator (41) takes the empty molybdenum tray (200) from the MBE transition chamber (4). If the empty molybdenum tray (200) is already in a turning state, step S5 is directly performed; If the empty molybdenum tray (200) is in an unflipped state, the MBE transition chamber manipulator (41) transfers the empty molybdenum tray (200) to the transfer component (33) and then withdraws it, and the transfer component (33) rotates a certain angle to align the film taking position with the flipping manipulator (61); S4, the turning manipulator (61) takes out the empty molybdenum tray (200) from the transfer component (33) and withdraws a certain distance, then turns the empty molybdenum tray (200) 180 degrees and returns it to the transfer component (33), the transfer component (33) rotates a certain angle so that the film taking position is aligned with the MBE transition chamber manipulator (41), and the MBE transition chamber manipulator (41) takes back the turned empty molybdenum tray (200); S5, the transfer component (33) rises, the first lifting assembly (34) rises and drives the transfer plate (31) and the filter plate (32) to fit with the MBE transition chamber manipulator (41), the MBE transition chamber manipulator (41) transfers the empty molybdenum tray (200) to the filter plate (32), the wafer position (203) on the molybdenum tray (200) is aligned with the wafer filter through hole (321), and the MBE transition chamber manipulator (41) is withdrawn; S6, the flip manipulator (61) simultaneously clamps the transfer plate (31), the filter plate (32) and the molybdenum support (200), the first lifting assembly (34) descends and separates from the transfer plate (31), the flip manipulator (61) retreats a certain distance and then flips 180 degrees, and the wafer (100) on the wafer carrier (101) passes through the wafer filter through hole (321) and falls onto the molybdenum support (200) at the bottom. Wafer position (203); S7, the turning manipulator (61) returns the molybdenum support (200), the filter plate (32) and the transfer plate (31), the first lifting assembly (34) rises to receive the molybdenum support (200), the turning manipulator (61) withdraws, the second lifting assembly (35) rises to drive the filter plate (32) and the transfer plate (31) above to separate from the molybdenum support (200), the MBE transition chamber manipulator (41) clamps the molybdenum support (200), the first lifting assembly (34) descends to separate from the molybdenum support (200), and the MBE transition chamber manipulator (41) retrieves the molybdenum support (200); the turning chamber (3) and the MBE transition chamber (4) are isolated.
10. The method for MOCVD and MBE sample interaction according to claim 9, characterized in that: Also includes the steps: S8, the MBE transition chamber (4) is evacuated to a third target vacuum degree, the MBE transition chamber (4) and the MBE growth chamber (5) are connected, the MBE transition chamber manipulator (41) transfers the molybdenum support (200) to the MBE growth chamber (5), isolates the MBE transition chamber (4) and the MBE growth chamber (5), the MBE growth chamber (5) is evacuated to a fourth target vacuum degree, and the MBE process is started; S9. After the MBE process is completed, the MBE growth chamber (5) and the MBE transition chamber (4) are connected, the MBE transition chamber manipulator (41) takes out the molybdenum support (200) from the MBE growth chamber (5), isolates the MBE growth chamber (5) and the MBE transition chamber (4), connects the MBE transition chamber (4) and the turnover chamber (3), the MBE transition chamber manipulator (41) transfers the molybdenum support (200) to the turnover chamber (3), the first lifting assembly (34) rises to hold the molybdenum support (200), the MBE transition chamber manipulator (41) is withdrawn, isolates the MBE transition chamber (4) and the turnover chamber (3), and the second lifting assembly (34) rises to hold the molybdenum support (200), the MBE transition chamber manipulator (41) is withdrawn, isolates the MBE transition chamber (4) and the turnover chamber (3), and the second lifting assembly (34) is lifted. The descending assembly (35) descends to drive the filter plate (32) and the transfer plate (31) above to fall on the molybdenum support (200), the flipping manipulator (61) simultaneously clamps the molybdenum support (200), the filter plate (32) and the transfer plate (31), the first lifting assembly (34) descends and separates from the molybdenum support (200), the second lifting assembly (35) descends and separates from the filter plate (32), the flipping manipulator (61) retreats a certain distance and then flips 180 degrees, and the wafer (100) on the molybdenum support (200) passes through the wafer filter through hole (321) and falls into the wafer carrier (101) of the lowermost transfer plate (31); S10, the turning robot (61) returns the transfer plate (31), the filter plate (32) and the molybdenum support (200), the first lifting assembly (34) receives the transfer plate (31), the turning robot (61) withdraws, the second lifting assembly (35) rises to drive the filter plate (32) and the molybdenum support (200) above to separate from the transfer plate (31), and connect the MOCVD growth chamber (1), the MOCVD transition chamber (2) and the turning chamber (3), the MOCVD transition chamber robot (21) transfers each wafer (100) on the transfer plate (31) in the turning chamber (3) together with the wafer carrier (101) to the graphite plate (102) in the MOCVD growth chamber (1), and isolates the MOCVD growth chamber (1), the MOCVD transition chamber (2) and the turning chamber (3).