Full-inorganic perovskite light-absorbing layer, and preparation method therefor and use thereof

Abstract

A full-inorganic perovskite light-absorbing layer, and a preparation method therefor and the use thereof. In the preparation method, a magnetron sputtering method is used to sputter a single target source CsPb1-xSnxI3, or simultaneously sputter a target source CsI, a target source PbI2 and / or a target source SnI2, which are independent of each other, to directly form perovskite and obtain a thin film, such that the thin film is annealed and subjected to phase inversion to obtain a perovskite light-absorbing layer. The preparation method can improve the high-temperature stability of the full-inorganic perovskite light-absorbing layer. Since no extra chemical reaction is required, and no solvent is required, the preparation method is environmentally friendly. In addition, the preparation method has the advantages of controllable components, simple operations, being capable of large-area production, etc., such that the problems of large-area uniformity of traditional perovskite and many rough holes of a solution method can be solved; and the preparation method has no requirements for the morphology of a substrate for bearing perovskite, and a hole-free and high-quality full-inorganic perovskite light-absorbing layer can be prepared on a light trapping structure and a flexible substrate.

Description

An all-inorganic perovskite light-absorbing layer and its preparation method and use

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on March 8, 2024, with application number 202410267730.1 and invention name “A fully inorganic perovskite light-absorbing layer, its preparation method and use”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention belongs to the field of perovskite materials and relates to an all-inorganic perovskite light-absorbing layer and a preparation method and application thereof. Background Art

[0003] With the development of industry, humanity's demand for energy is increasing. However, the use of fossil fuels such as coal, oil, and natural gas not only consumes limited non-renewable resources but also causes environmental problems. To reduce the consumption of non-renewable resources and carbon emissions, vigorously developing clean energy and changing the energy structure dominated by fossil fuels are important common goals for achieving green development in all industries.

[0004] As a renewable resource, solar energy has attracted widespread attention due to its numerous advantages. Solar cells, powered by solar radiation, convert light energy into electricity, thus enabling the utilization of clean energy. Solar cells have a wide range of applications and offer advantages such as environmental protection, energy conservation, and safety, making them crucial for promoting green development.

[0005] Perovskite cells are a new type of solar cell with a structure similar to the crystal structure of ceramic materials. They are considered a promising solar cell due to their high efficiency, low cost, and flexibility. They utilize the absorption of light by perovskite materials to convert light energy into electricity. Compared to traditional silicon-based solar cells, perovskite cells offer higher photoelectric conversion efficiency and lower manufacturing costs. Furthermore, their simple manufacturing process allows for large-scale production, holding them for broad application prospects.

[0006] Organic-inorganic composite perovskite cells and all-inorganic perovskite cells are the two main types of perovskite cells. Organic-inorganic composite perovskite cells typically contain organic and inorganic materials. This hybrid structure can bring several advantages, such as flexibility, high efficiency, and an adjustable band gap. However, this type of cell also has some disadvantages. First, the organic material has poor stability. When the temperature reaches 85°C or above, its organic portion will decompose, which will lead to rapid degradation of battery performance. Second, the flammability of organic materials makes this type of battery a safety hazard. In addition, the production process of organic-inorganic composite perovskite cells may be more complex than that of all-inorganic perovskite cells, so the manufacturing cost may be higher. The solution method is often used in the manufacturing process, which has the disadvantages of solvent contamination and harm to the human body, and is not suitable for large-scale and large-scale production.

[0007] In contrast, all-inorganic perovskite cells offer several significant advantages. First, because they are composed entirely of inorganic materials, they typically have higher stability and longer lifespans, especially tin-based all-inorganic perovskite cells, which even make them suitable for use in more extreme environments such as deserts. This high stability also facilitates the use of tin-based all-inorganic perovskites as the underlying low-bandgap layer of all-perovskite stacked devices, ensuring consistent performance. Second, all-inorganic perovskite cells are cheaper to manufacture, and their production process is generally simpler.

[0008] Therefore, it is of great practical significance to develop and optimize all-inorganic perovskite cells and their preparation technology, further develop and improve their stability and photoelectric performance, and make their preparation low-cost, easy to operate and suitable for large-scale production. Summary of the Invention

[0009] In view of the problems existing in the prior art, the purpose of the present invention is to provide an all-inorganic perovskite light-absorbing layer and its preparation method and use. The preparation method uses a magnetron sputtering method to directly form a perovskite film, and the perovskite light-absorbing layer can be obtained after the film is annealed and phase-transformed. Therefore, it can avoid the problems of high toxicity, many defects, poor stability and unsuitability for large-scale production when preparing the all-inorganic perovskite light-absorbing layer in the prior art.

[0010] To achieve this object, the present invention adopts the following technical solutions:

[0011] In a first aspect, the present invention provides a method for preparing an all-inorganic perovskite light-absorbing layer, the preparation method comprising:

[0012] Using magnetron sputtering method, sputtering single target source CsPb 1-x Sn x I3, 0≤x≤1, a sputtered film is obtained;

[0013] The sputtered film is annealed and phase-transformed to obtain an all-inorganic perovskite light-absorbing layer.

[0014] The preparation method described in the present invention can improve the high-temperature stability of the all-inorganic perovskite light-absorbing layer. The preparation method does not require additional chemical reactions or the use of solvents, is environmentally friendly, has a reduced lead content, effectively reduces toxicity, and has the advantages of controllable ingredients, simple operation, and large-scale production. It can solve the problems of large-area uniformity of traditional perovskites and the roughness and large number of voids in solution methods. It has no requirements for the morphology of the perovskite substrate and can realize the preparation of hole-free, high-quality all-inorganic perovskite light-absorbing layers on light-trapping structures and flexible substrates.

[0015] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. Through the following technical solutions, the technical objectives and beneficial effects of the present invention can be better achieved and realized.

[0016] As a preferred technical solution of the present invention, the preparation method comprises:

[0017] Use independent target sources CsI, PbI2 and / or SnI2 to replace the sputtering single target source CsPb 1-x Sn x I3, sputtering is performed to obtain a sputtered film.

[0018] As a preferred technical solution of the present invention, the single target source CsPb 1-x Sn x I3's methods include:

[0019] Preparation of CsPb 1-x Sn x I3 powder is ground and sintered under conditions of isolating water and oxygen to obtain a single target source.

[0020] Preferably, the sintering temperature is 750-850°C, for example, 750°C, 760°C, 770°C, 780°C, 790°C, 800°C, 810°C, 820°C, 830°C, 840°C or 850°C, etc., but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0021] As a preferred technical solution of the present invention, the vacuum degree of the control chamber before sputtering is ≤5×10 -4 Pa.

[0022] Preferably, the sputtering working gas includes argon.

[0023] Preferably, the sputtering working pressure is 0.3~0.8Pa, for example 0.3Pa, 0.35Pa, 0.4Pa, 0.45Pa, 0.5Pa, 0.55Pa, 0.6Pa, 0.65Pa, 0.7Pa, 0.75Pa or 0.8Pa, etc., but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0024] As a preferred technical solution of the present invention, the sputtering time is 5 to 60 minutes, for example, 5 minutes, 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes or 60 minutes, etc., preferably 10 to 25 minutes, but is not limited to the listed values, and other values ​​not listed within the above numerical range are also applicable.

[0025] Preferably, the sputtering power is 10 to 150 W, for example, 10 W, 20 W, 30 W, 40 W, 50 W, 60 W, 70 W, 80 W, 90 W, 100 W, 110 W, 120 W, 130 W, 140 W or 150 W, etc., preferably 10 to 90 W, but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0026] The operating pressure and RF power during sputtering determine whether a glow reaction can be induced, as well as the speed of film deposition. If sputtering is too fast or too slow, the crystal growth of the perovskite layer will not match the film deposition rate. For example, if the operating pressure is too low, the glow reaction is unlikely to be induced. If the operating pressure is too high, the sputtering rate will be too fast, resulting in a decrease in the crystallinity of the film.

[0027] As a preferred technical solution of the present invention, the thickness of the sputtered film is 300 to 800 nm, for example, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm or 800 nm, but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0028] Preferably, the annealing phase transition temperature is 200-250°C, for example, 200°C, 205°C, 210°C, 215°C, 220°C, 225°C, 230°C, 235°C, 240°C, 245°C or 250°C, etc., but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0029] The annealing process described in the present invention is mainly used for the transformation of the perovskite phase. If the temperature is too low, the perovskite crystal will not be able to undergo phase transformation, while if the temperature is too high, the perovskite crystal will be damaged.

[0030] As a preferred technical solution of the present invention, the preparation method further includes: first performing a target burning process to remove the target material aging layer, and then placing the substrate to be sputtered to perform the sputtering.

[0031] Preferably, when using mutually independent target sources CsI, PbI2 and / or SnI2, a corresponding baffle is provided between each target source and the substrate to be sputtered.

[0032] The baffle provided in the present invention is mainly used to prevent the perovskite target material from sputtering onto the substrate. For example, the target needs to be burned before sputtering, and burning the target will also cause sputtering. At this time, the baffle is used to isolate the perovskite from sputtering onto the substrate, thereby preventing contamination.

[0033] Preferably, when using independent target sources CsI, PbI2 and / or SnI2, the power of the corresponding target sources is controlled individually to adjust the composition ratio in the obtained all-inorganic perovskite light-absorbing layer.

[0034] As a preferred technical solution of the present invention, the preparation method comprises:

[0035] Using magnetron sputtering method, a single target source CsPb is set in the chamber 1-x Sn x I3, 0≤x≤1, or mutually independent target sources CsI, and target sources PbI2 and / or target sources SnI2 are provided, and corresponding baffles are provided between each mutually independent target source and the substrate to be sputtered;

[0036] The chamber was evacuated to ≤5×10 -4 Pa, introduce working gas argon, adjust the sputtering power to 10-150W so that the chamber reaches a working pressure of 0.3-0.8Pa;

[0037] Perform palladium burning treatment, start sputtering for 10 minutes to remove the aging layer on the target surface, and transfer the substrate to be sputtered to the chamber after the sputtering is stable;

[0038] Start sputtering, for single target source CsPb 1-x Sn x I3 is directly sputtered, or the target source CsI, target source PbI2 and / or target source SnI2 are directly sputtered simultaneously and the power of the corresponding target source is controlled separately, and the sputtering time is controlled to be 5 to 60 minutes to obtain a sputtered film of 300 to 800 nm;

[0039] The sputtered film was placed on a heating table at 200-250°C for annealing and phase conversion to obtain the all-inorganic perovskite light absorbing layer CsPb 1-x Sn x I3, 0≤x≤1.

[0040] In a second aspect, the present invention provides an all-inorganic perovskite light-absorbing layer, which is obtained using the preparation method described in the first aspect, wherein the components of the all-inorganic perovskite light-absorbing layer include CsPb 1-x Sn x I3, 0≤x≤1, for example, x can be 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1, etc. When x=0, it is CsPb1I3, and when x=1, it is CsSn1I3, but it is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0041] In a third aspect, the present invention provides a perovskite device comprising the all-inorganic perovskite light-absorbing layer described in the second aspect.

[0042] As a preferred technical solution of the present invention, the perovskite device includes a substrate, a first electrode layer, a first charge transport layer, an all-inorganic perovskite light absorption layer, a second charge transport layer and a second electrode layer stacked in sequence.

[0043] Preferably, the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

[0044] The present invention does not specifically limit the composition and thickness of other layer structures in the perovskite device except the all-inorganic perovskite light-absorbing layer, which should be reasonably adjusted according to design requirements and actual needs. All materials that can be used in perovskite devices in the prior art are applicable.

[0045] Exemplarily, the materials of the first charge transport layer and the second charge transport layer can be independently selected from poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), 2,2',7,7'-tetrakis- (dimethoxydiphenylamine) -spirofluorene (Spiro-OMeTAD), 2,2',7,7'-tetrakis (di-p-tolylamino) spiro-9,9'-difluorene (Spiro-TTB) or nickel oxide (NiO), cuprous thiocyanate (CuSCN), cuprous iodide (CuI), cuprous oxide (CuO), nickel oxide (NiO), vanadium pentoxide (V2O5), molybdenum trioxide (MoO3), P3HT, PEDOT:PSS, titanium dioxide (TiO2), tin dioxide (SnO2), fullerene (C 60 ), zinc oxide (ZnO) or PCBM.

[0046] For example, the materials of the first and second electrodes can be independently selected from transparent conductive oxides such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), tungsten-doped indium oxide (IWO), titanium-doped indium oxide (ITIO), fluorine-doped tin oxide (FTO), and aluminum-doped zinc oxide (AZO), or at least one of ultra-thin metal electrodes such as silver (Ag), copper (Cu), gold (Au), aluminum (Al), molybdenum (Mo), and chromium (Cr). When a transparent conductive oxide is selected, its preparation method includes any one of magnetron sputtering, thermal evaporation coating, or screen printing.

[0047] Preferably, the thickness of the first charge transport layer and the second charge transport layer is 10 to 50 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0048] Preferably, the thickness of the first electrode layer and the second electrode layer is 5 to 100 nm, for example, 5 nm, 15 nm, 25 nm, 35 nm, 45 nm, 55 nm, 65 nm, 75 nm, 85 nm, 95 nm or 100 nm, but is not limited to the listed values. Other values ​​not listed within the above numerical range are also applicable.

[0049] Compared with the existing technical solutions, the present invention has at least the following beneficial effects:

[0050] (1) The present invention adopts a magnetron sputtering method to form the preparation method and prepare an all-inorganic perovskite absorption layer, which is particularly suitable for the preparation of a tin-based all-inorganic perovskite absorption layer. Since the tin-based all-inorganic perovskite absorption layer does not contain organic components in its material composition, it can better resist the erosion of environmental factors and achieve long-term stability, thereby overcoming the thermal stability problem caused by traditional organic components.

[0051] (2) The preparation method can precisely control the composition of the thin film by preparing or using and controlling the corresponding target material, thereby optimizing the photoelectric performance of the obtained perovskite light absorbing layer.

[0052] (3) The preparation method does not require a solvent, reduces the lead content, and effectively reduces pollution to the environment.

[0053] (4) The preparation method is conducive to the preparation of large-area non-porous perovskite light-absorbing layers. It is an efficient and scalable preparation method, which is expected to reduce production costs and promote the commercial application of tin-based all-inorganic perovskite absorption layers. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] FIG1 is a SEM image of the all-inorganic perovskite light-absorbing layer in the perovskite cell obtained in Example 1.

[0055] FIG2 is a stability test diagram of the perovskite cells obtained in Example 1 and Comparative Example 1. DETAILED DESCRIPTION

[0056] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0057] It should be apparent to those skilled in the art that the embodiments are only intended to help understand the present invention and should not be considered as specific limitations of the present invention.

[0058] Example 1

[0059] This embodiment provides a perovskite cell, wherein the perovskite cell comprises an all-inorganic perovskite light-absorbing layer, and the preparation method of the perovskite cell is as follows:

[0060] (1) Prepare FTO glass (the FTO film layer is used as the first electrode layer), clean it, blow dry it with nitrogen N2, and use it as a substrate;

[0061] (2) preparing a hole transport layer as the first charge transport layer on the electrode by evaporation, wherein the material of the hole transport layer is 2,2',7,7'-tetrakis-(dimethoxydiphenylamine)-spirofluorene (Spiro-OMeTAD) with a thickness of 10 nm;

[0062] (3) Preparation of CsPb on the first charge transport layer 0.5 Sn 0.5 I3 tin-based all-inorganic perovskite light-absorbing layer: first configure CsPb 0.5 Sn 0.5 I3 powder is fully ground in agate, and then sintered at high temperature to form CsPb under the condition of isolating water and oxygen. 0.5 Sn 0.5 I3 target. Install the prepared target into the sputtering target position in the sputtering chamber; evacuate the chamber to 5×10 -4 Pa, introduce argon gas to make the pressure in the chamber reach 0.4Pa, adjust the sputtering power to 80W, pre-sputter for 10min to remove the surface aging layer, and after the sputtering is stable, transfer the substrate to the sputtering chamber and start sputtering CsPb 0.5 Sn 0.5 The I3 target material was sputtered for 40 minutes to form a sputtered film with a thickness of 600 nm. After the sputtering was completed, the substrate with the sputtered film was transferred to an inert environment at atmospheric pressure through a transmission line and annealed at 280°C on a heating table to cause the perovskite to undergo phase transition and obtain an all-inorganic perovskite light-absorbing layer.

[0063] (4) preparing an electron transport layer as a second charge transport layer on the all-inorganic perovskite light absorbing layer by vacuum evaporation, wherein the material of the electron transport layer is PCBM and the thickness is 25 nm;

[0064] (5) Finally, a back electrode is prepared on the second charge transport layer as the second electrode. The material of the back electrode is silver and the thickness is 90 nm to obtain a perovskite cell.

[0065] Example 2

[0066] This embodiment provides a perovskite battery, which contains an all-inorganic perovskite light-absorbing layer. Step (3) of the preparation method of the perovskite battery is different from that of Example 1. Step (3) of this embodiment includes:

[0067] Preparation of CsPb on the first charge transport layer 0.5 Sn 0.5 I3 Tin-based all-inorganic perovskite light-absorbing layer: CsI target, PbI2 target, and SnI2 target are placed in target position I, target position II, and target position III in the sputtering cavity, respectively. A corresponding baffle is set between each target and the substrate. Each baffle is kept open and the chamber is evacuated to 5×10 -4 Pa, introduce argon gas to make the pressure in the chamber reach 0.4Pa, adjust the sputtering power of target position I, target position II and target position III to 50W, 25W and 25W respectively, pre-sputter for 10min to remove the aging layer on the surface of the corresponding target material, and after the sputtering is stable, transfer the substrate to the sputtering chamber and start sputtering the three targets at the same time. The sputtering time is 35min, forming a sputtering film with a thickness of 600nm. The composition of the sputtering film is controlled to be CsPb 0.5 Sn 0.5 I3. After the sputtering is completed, the substrate with the sputtered film is transferred to an inert environment at atmospheric pressure through a transmission line and placed on a heating table for annealing at 280°C to cause the perovskite to undergo phase transition and obtain an all-inorganic perovskite light-absorbing layer;

[0068] Except for the above, other conditions are exactly the same as those in Example 1.

[0069] Example 3

[0070] This embodiment provides a perovskite battery, wherein the perovskite battery comprises an all-inorganic perovskite light-absorbing layer, and the all-inorganic perovskite light-absorbing layer is composed of CsPb 0.5 Sn 0.5 I3 is adjusted to CsPbI3, that is, in the step (3) of the preparation method of the perovskite battery, CsPb 0.5 Sn 0.5 The I3 powder is adjusted to CsPbI3 powder to form a CsPbI3 target. Except for the above, other conditions are exactly the same as those in Example 1.

[0071] Example 4

[0072] This embodiment provides a perovskite battery, wherein the perovskite battery comprises an all-inorganic perovskite light-absorbing layer, and the all-inorganic perovskite light-absorbing layer is composed of CsPb 0.5 Sn 0.5 I3 is adjusted to CsSnI3, that is, in the step (3) of the preparation method of the perovskite battery, CsPb 0.5 Sn 0.5 The I3 powder is adjusted to CsSnI3 powder to form a CsSnI3 target. Except for the above, other conditions are exactly the same as those in Example 1.

[0073] Example 5

[0074] This embodiment provides a perovskite battery, wherein the perovskite battery comprises an all-inorganic perovskite light-absorbing layer, and the all-inorganic perovskite light-absorbing layer is composed of CsPb 0.5 Sn 0.5 I3 is adjusted to CsPbI3, that is, in step (3) of the preparation method of the perovskite battery, the sputtering powers of target position I, target position II and target position III are adjusted to 60 W, 60 W and 0 W respectively, and the baffle corresponding to target position III is closed. Except for the above, other conditions are exactly the same as those in Example 2.

[0075] Example 6

[0076] This embodiment provides a perovskite battery, wherein the perovskite battery comprises an all-inorganic perovskite light-absorbing layer, and the all-inorganic perovskite light-absorbing layer is composed of CsPb 0.5 Sn 0.5 I3 is adjusted to CsSnI3, that is, in step (3) of the preparation method of the perovskite battery, the sputtering powers of target position I, target position II and target position III are adjusted to 60W, 0W and 60W respectively, and the baffle corresponding to target position II is closed. Except for the above, other conditions are exactly the same as those in Example 2.

[0077] Example 7

[0078] This embodiment provides a perovskite battery. In the preparation method of the perovskite battery, the sputtering power is adjusted from 80 W to 5 W. Apart from this, other conditions are exactly the same as those in Example 1.

[0079] Example 8

[0080] This embodiment provides a perovskite cell. In the preparation method of the perovskite cell, the sputtering power is adjusted from 80 W to 10 W. Apart from this, other conditions are exactly the same as those in Example 1.

[0081] Example 9

[0082] This embodiment provides a perovskite cell. In the preparation method of the perovskite cell, the sputtering power is adjusted from 80 W to 45 W. Apart from this, other conditions are exactly the same as those in Example 1.

[0083] Example 10

[0084] This embodiment provides a perovskite cell. In the preparation method of the perovskite cell, the sputtering power is adjusted from 80 W to 115 W. Apart from this, other conditions are exactly the same as those in Example 1.

[0085] Example 11

[0086] This embodiment provides a perovskite cell. In the preparation method of the perovskite cell, the sputtering power is adjusted from 80 W to 150 W. Apart from this, other conditions are exactly the same as those in Example 1.

[0087] Example 12

[0088] This embodiment provides a perovskite cell. In the preparation method of the perovskite cell, the sputtering power is adjusted from 80 W to 160 W. Apart from this, other conditions are exactly the same as those in Example 1.

[0089] Example 13

[0090] This embodiment provides a perovskite battery. In the preparation method of the perovskite battery, the pressure in the cavity is adjusted from 0.4 Pa to 0.2 Pa. Apart from this, other conditions are exactly the same as those in Example 1.

[0091] Example 14

[0092] This embodiment provides a perovskite battery. In the preparation method of the perovskite battery, the pressure in the cavity is adjusted from 0.4 Pa to 0.3 Pa. Apart from this, other conditions are exactly the same as those in Example 1.

[0093] Example 15

[0094] This embodiment provides a perovskite battery. In the preparation method of the perovskite battery, the pressure in the cavity is adjusted from 0.4 Pa to 0.8 Pa. Apart from this, other conditions are exactly the same as those in Example 1.

[0095] Example 16

[0096] This embodiment provides a perovskite battery. In the preparation method of the perovskite battery, the pressure in the cavity is adjusted from 0.4 Pa to 0.9 Pa. Apart from this, other conditions are exactly the same as those in Example 1.

[0097] Comparative Example 1

[0098] This comparative example provides a perovskite battery. Step (3) of the preparation method of the perovskite battery is different from that of Example 1, that is, step (3) of the comparative example is:

[0099] Prepared all-inorganic perovskite CsPb 0.5 Sn 0.5 I3 precursor solution, 50 μL of the precursor solution was spin-coated on the first charge transport layer at a rotation speed of 3000 rpm for a total of 30 seconds. In the last 10 seconds of the spin coating, 100 μL of anti-solvent chlorobenzene was added dropwise, and then annealed at 280°C to obtain an all-inorganic perovskite light-absorbing layer;

[0100] Except for the above, other conditions are exactly the same as those in Example 1.

[0101] I. Morphological Characterization: The all-inorganic perovskite light-absorbing layer was tested using a scanning electron microscope. FIG1 is a SEM image of the all-inorganic perovskite light-absorbing layer in the perovskite cell obtained in Example 1. As can be seen from the figure, the formed perovskite surface is smooth and free of holes.

[0102] II. Performance Test: The perovskite cells obtained in the examples and comparative examples were tested in an IV test machine with AM1.5 standard sunlight, with an effective area of ​​1cm 2 , the results are recorded in Table 1.

[0103] Table 1

[0104] From Table 1 we can see that:

[0105] From Examples 1 and 2 and Comparative Example 1, it can be seen that the efficiency of the battery prepared by the present invention by magnetron sputtering of all-inorganic perovskite is higher than that of the battery prepared by the solution method;

[0106] As can be seen from Examples 1 and 7-12, when the sputtering power is too high, the sputtering rate will be too fast, which will lead to a serious mismatch between the sputtering rate and the perovskite crystallization rate. When the sputtering power is too low, only a few of the sputtered particles will reach the substrate to form perovskite crystals.

[0107] As can be seen from Examples 1 and 13-16, when the pressure in the chamber is too low, the argon content is too low, resulting in a failure of the glow reaction and no sputtered particles. When the pressure in the chamber is too high, the argon content is too high, the glow reaction is strong, the sputtering rate cannot be controlled, and the perovskite crystallization is poor.

[0108] III. Stability Test: After 500 hours of continuous illumination under one sun, the efficiency was tested. As shown in Figure 2, the stability test results of the perovskite cells obtained in Example 1 and Comparative Example 1 are shown. It can be seen from the figure that the efficiency of the perovskite cell obtained in Example 1 can still be maintained at more than 90%, which is significantly higher than that of Comparative Example 1.

[0109] As can be seen from the above, this invention successfully fabricates a tin-based all-inorganic perovskite absorber layer by incorporating magnetron sputtering technology. This overcomes the stability issues of traditional organic perovskite absorbers and achieves breakthroughs in performance. This invention is expected to play a significant role in the field of optoelectronic devices such as solar cells, providing a powerful impetus for the development of new energy.

[0110] While the present invention is described through the above-described embodiments to illustrate the detailed structural features of the present invention, the present invention is not limited to these detailed structural features, nor does it necessarily rely on these detailed structural features for implementation. Those skilled in the art should understand that any improvements to the present invention, equivalent replacements for selected components, additions of auxiliary components, and selection of specific embodiments, etc., fall within the scope of protection and disclosure of the present invention.

[0111] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the scope of protection of the present invention.

[0112] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0113] In addition, the various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. A method for preparing an all-inorganic perovskite light-absorbing layer, characterized in that: The preparation method comprises: Using magnetron sputtering method, sputtering single target source CsPb 1-x Sn x I3, 0≤x≤1, a sputtered film is obtained; The sputtered film is annealed and phase-transformed to obtain an all-inorganic perovskite light-absorbing layer.

2. The preparation method according to claim 1, characterized in that The preparation method comprises: Use independent target sources CsI, PbI2 and / or SnI2 to replace the sputtering single target source CsPb 1-x Sn x I3, sputtering is performed to obtain a sputtered film.

3. The preparation method according to claim 1, characterized in that Preparation of the single target source CsPb 1-x Sn x I3's methods include: Preparation of CsPb 1-x Sn x I3 powder is ground and sintered under conditions of isolating water and oxygen to obtain a single target source.

4. The preparation method according to claim 1 or 2, characterized in that The vacuum degree of the control chamber before sputtering is ≤5×10 -4 Pa.

5. The preparation method according to claim 1 or 2, characterized in that The sputtering working gas includes argon; the sputtering working pressure is 0.3-0.8 Pa.

6. The preparation method according to claim 1 or 2, characterized in that The sputtering time is 5 to 60 minutes; the sputtering power is 10 to 150W.

7. The preparation method according to claim 1 or 2, characterized in that The thickness of the sputtered film is 300 to 800 nm.

8. The preparation method according to claim 1 or 2, characterized in that The annealing phase transition temperature is 200-250°C.

9. The preparation method according to claim 1 or 2, characterized in that: The preparation method further comprises the steps of first performing a target burning process to remove an aging layer of the target material, and then placing a substrate to be sputtered therein for the sputtering process.

10. The preparation method according to claim 2, characterized in that When using independent target sources CsI, PbI2 and / or SnI2, a corresponding baffle is provided between each target source and the substrate to be sputtered.

11. The preparation method according to claim 2 or 10, characterized in that: When using independent target sources CsI, PbI2 and / or SnI2, the composition ratio in the obtained all-inorganic perovskite light-absorbing layer is adjusted by individually controlling the power of the corresponding target sources.

12. An all-inorganic perovskite light-absorbing layer, characterized in that: The preparation method according to any one of claims 1 to 11 is used to obtain the all-inorganic perovskite light-absorbing layer, wherein the composition includes CsPb 1-x Sn x I3, 0≤x≤1.

13. A perovskite device, characterized in that: Contains the all-inorganic perovskite light-absorbing layer according to claim 12.

14. The perovskite device according to claim 13, wherein: The invention comprises a substrate, a first electrode layer, a first charge transport layer, an all-inorganic perovskite light-absorbing layer, a second charge transport layer and a second electrode layer which are stacked in sequence.

15. The perovskite device according to claim 14, characterized in that The first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer; the thickness of the first charge transport layer and the second charge transport layer is 10 to 50 nm; the thickness of the first electrode layer and the second electrode layer is 5 to 100 nm.

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