Gas intake assembly, semiconductor process chamber and semiconductor process method

Abstract

The present application relates to the technical field of semiconductors. Disclosed are a gas intake assembly, a semiconductor process chamber and a semiconductor process method. The gas intake assembly comprises a gas intake window and a switching valve plate which are connected to each other, wherein the gas intake window is provided with a first gas inlet and a second gas inlet; the switching valve plate can move between a first position and a second position relative to the gas intake window, and the switching valve plate is provided with a gas path in communication with a gas output end of the gas intake assembly; and when the switching valve plate is located in the first position, the first gas inlet is in communication with the gas path, and the second gas inlet is not in communication with the gas path; and when the switching valve plate is located in the second position, the second gas inlet is in communication with the gas path, and the first gas inlet is not in communication with the gas path. In this way, by means of adjusting the position of the switching valve plate, gas from a previous process can be directly cut off at the position of the gas intake window, in order to prevent residual gas from the previous process from participating in the next process, thereby facilitating an improvement in a process effect.

Description

Gas intake assembly, semiconductor process chamber, and semiconductor process method Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to an air intake assembly, a semiconductor process chamber, and a semiconductor process method. Background Art

[0002] In the field of semiconductor processing, the Bosch process refers to a process of depositing a thin film on the lateral edge of the etching in order to prevent or weaken lateral etching in integrated circuit manufacturing. It mainly consists of switching between an etching step dominated by fluorine-based gas and a deposition step dominated by carbon fluorine gas.

[0003] In the prior art, a semiconductor process chamber includes a chamber body, a deposition gas supply device, and an etching gas supply device. The deposition gas supply device is connected to the interior of the chamber body through a first pipeline, and the etching gas supply device is connected to the interior of the chamber body through a second pipeline. Both the first pipeline and the second pipeline are provided with control valves, and the control valves are used to control the on-off of the first pipeline and the second pipeline, thereby controlling the deposition gas or the etching gas to enter the chamber body, thereby realizing the switching process between the etching process and the deposition process.

[0004] When the control valve controls the first pipeline to be connected and the second pipeline to be cut off, the deposition gas enters the chamber body and the etching gas is cut off. However, some of the etching gas remaining in the second pipeline will also enter the chamber body, and then mix with the deposition gas and participate in the process; similarly, when the control valve controls the first pipeline to be cut off and the second pipeline to be connected, the deposition gas is cut off and the etching gas enters the chamber body. However, some of the deposition gas remaining in the first pipeline will also enter the chamber body, and then mix with the etching gas and participate in the process. Therefore, when switching gases, the process gas remaining in the previous process participates in the next process, which will cause the etched side wall to produce an uneven scallop structure. The rough side wall will affect the subsequent process, thereby causing the yield of the device to decrease. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide an air intake component, a semiconductor process chamber and a semiconductor process method, which can solve the problem in the related art that residual gas in the air intake component affects the process effect during the gas switching process.

[0006] In a first aspect, an embodiment of the present application provides an air intake assembly, comprising an air intake window and a switching valve plate connected to each other, wherein the air intake window is provided with a first gas inlet port and a second gas inlet port, the switching valve plate is movable relative to the air intake window between a first position and a second position, and the switching valve plate is provided with an air path, the air path being in communication with an air outlet end of the air intake assembly;

[0007] When the switching valve plate is in the first position, the first gas inlet is connected to the gas circuit and the second gas inlet is disconnected from the gas circuit; when the switching valve plate is in the second position, the second gas inlet is connected to the gas circuit and the first gas inlet is disconnected from the gas circuit.

[0008] In a second aspect, an embodiment of the present application further provides an air intake assembly, comprising a first air intake unit and a second air intake unit.

[0009] The first air intake unit includes a first air intake pipe, a first air extraction pipe, and a first switching valve plate. The air intake of the first air extraction pipe and the air outlet of the first air intake pipe are arranged side by side. The first switching valve plate is rotatably arranged at the air intake of the first air extraction pipe and the air outlet of the first air intake pipe.

[0010] The second air intake unit includes a second air intake pipe, a second air extraction pipe and a second switching valve plate, the air intake of the second air extraction pipe and the air outlet of the second air intake pipe are arranged side by side, and the second switching valve plate is rotatably arranged at the air intake of the second air extraction pipe and the air outlet of the second air intake pipe;

[0011] The first air intake unit and the second air intake unit are alternately communicated with the air outlet end of the air intake assembly.

[0012] In a third aspect, an embodiment of the present application further provides a semiconductor process chamber, comprising a chamber body and the above-mentioned air inlet assembly, wherein the air outlet end of the air inlet assembly is connected to the chamber body.

[0013] In a fourth aspect, an embodiment of the present application further provides a semiconductor process method, which is applied to the air intake assembly in the first aspect, the method comprising:

[0014] In a first process step, the switching valve plate is controlled to move to a first position, so that the first gas enters the chamber body through the first gas inlet;

[0015] In a second process step, the switching valve plate is controlled to move to a second position, so that the second gas enters the chamber body through the second gas inlet;

[0016] The first process step and the second process step are performed alternately.

[0017] In a fifth aspect, an embodiment of the present application further provides a semiconductor process method, which is applied to the air intake assembly in the second aspect, the method comprising:

[0018] In a first process step, the first air intake unit is controlled to communicate with the air outlet end of the air intake assembly, so that the first switching valve plate is in a position to block the air inlet of the first air extraction pipe, and the second switching valve plate is in a rotating state;

[0019] The second process step is to control the second air intake unit to be connected to the air outlet end of the air intake assembly, so that the second switching valve plate is in a position to block the air inlet of the second air extraction pipe, and the first switching valve plate is in a rotating state.

[0020] In an embodiment of the present application, in a scheme where the air intake assembly includes an air intake window and a switching valve plate, by changing the position of the switching valve plate relative to the air intake window, it is possible to achieve communication between the first gas inlet and the outlet end of the air intake assembly, or to achieve communication between the second gas inlet and the outlet end of the air intake assembly, while the outlet end of the air intake assembly is always connected to the chamber body. Because the air intake window is located at the top of the chamber body, adjacent to the chamber body, the switching valve plate directly intercepts the previous process gas at the position of the air intake window, effectively preventing residual gas from the previous process from entering the chamber body and participating in the next process, and preventing the two process gases from mixing and participating in the process, which is beneficial to improving the process effect. Moreover, because the switching valve plate is located in close proximity to the chamber body, the process gas enters the chamber body at a faster speed, avoiding the problem of air intake delay caused by the process gas circulating in the pipeline. The air intake delay time is effectively shortened, and the pressure control process of the chamber body during the two process processes is also faster and more accurate, thereby making the pressure difference of the chamber body easier to control during the two process processes, which is beneficial to improving the process effect.

[0021] In the scheme in which the air intake component includes a first air intake unit and a second air intake unit, the first air intake unit and the second air intake unit are alternately connected to the air outlet end of the air intake component. When the first air intake unit is connected to the air outlet end of the air intake component, the second switching valve plate can be rotated to a position to open the second exhaust pipe, and the second exhaust pipe exhausts the second air intake pipe, that is, exhausts the process gas in the second air intake pipe, and avoids the residual process gas from entering the chamber body and mixing with the process gas of the next process to participate in the next process; similarly, when the second air intake unit is connected to the air outlet end of the air intake component, the first switching valve plate can be rotated to a position to open the first exhaust pipe, and the first exhaust pipe exhausts the first air intake pipe, that is, exhausts the process gas in the first air intake pipe, and avoids the residual process gas from entering the chamber body and mixing with the process gas of the next process to participate in the next process, which is beneficial to improving the process effect and thus beneficial to improving the yield of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG1 is a schematic structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application;

[0023] FIG2 is a schematic structural diagram of an air intake assembly disclosed in an embodiment of the present application;

[0024] FIG3 is a cross-sectional view of the air intake assembly when the switching valve plate is in the first position according to an embodiment of the present application;

[0025] FIG4 is a cross-sectional view of the air intake assembly when the switching valve plate is in the second position according to an embodiment of the present application;

[0026] FIG5 is a top view of a flow equalizer plate disclosed in an embodiment of the present application;

[0027] FIG6 is a partial schematic diagram of a flow equalizer plate disclosed in an embodiment of the present application;

[0028] FIG7 is a schematic structural diagram of the pressure control valve disclosed in an embodiment of the present application when the exhaust port is in a closed state;

[0029] FIG8 is a schematic diagram of the operation of the pressure control valve when the exhaust port is in an open state according to an embodiment of the present application;

[0030] FIG9 is a flow chart of a semiconductor process method disclosed in an embodiment of the present application;

[0031] FIG10 is a timing diagram of the semiconductor process method disclosed in an embodiment of the present application;

[0032] FIG11 is a schematic structural diagram of a semiconductor process chamber disclosed in another embodiment of the present application;

[0033] FIG12 is a schematic structural diagram of an air intake assembly disclosed in another embodiment of the present application;

[0034] FIG13 is a schematic diagram of the operation of the first rotating valve plate disclosed in another embodiment of the present application.

[0035] Explanation of the reference numerals: 100 - chamber body, 101 - air inlet, 110 - base, 111 - wafer, 120 - liner, 200 - air inlet assembly, 210 - air inlet window, 211 - first gas inlet, 212 - second gas inlet, 220 - switching valve plate, 221 - first gas section, 222 - second gas section, 231 - first blocking member, 232 - second blocking member, 241 - first stopper, 242 - second stopper, 251 - first fixing member, 252 - second fixing member, 260 - uniform flow plate, 261 - uniform flow groove, 262 - uniform flow hole, 271 - first sealing member, 272 - second sealing member, 273 - third sealing member, 223 - first switching valve plate, 224 - second switching valve plate, 281-first air inlet pipe, 282-second air inlet pipe, 283-first air extraction pipe, 284-second air extraction pipe, 285-air outlet pipe, 285a-main pipe, 285b-first pipe section, 285c-second pipe section, 291-third control valve, 292-fourth control valve, 300-vacuum pump, 310-molecular pump, 320-dry pump, 400-pressure control valve, 410-valve plate, 420-drive element, 510-first gas flow controller, 520-first air extraction pipeline, 530-first control valve, 531-first needle valve, 532-first pneumatic stop valve, 610-second gas flow controller, 620-second air extraction pipeline, 630-second control valve, 631-second needle valve, 632-second pneumatic stop valve. DETAILED DESCRIPTION

[0036] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0037] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0038] The following describes in detail the air intake assembly, semiconductor process chamber and semiconductor process method provided in the embodiments of the present application through specific embodiments and their application scenarios in combination with the accompanying drawings.

[0039] In some embodiments of the present application, as shown in Figures 1 and 2, the air intake assembly 200 may include an air intake window 210 and a switching valve plate 220. The air intake window 210 is used to introduce different gases, and the switching valve plate 220 is used to switch the gases so that the gases flow to the outlet end of the air intake assembly 200. Exemplarily, the gases introduced into the air intake window 210 may be different process gases, such as deposition gas and etching gas. In other words, the air intake window 210 is used to introduce deposition gas and etching gas, and the switching valve plate 220 is used to switch the deposition gas or etching gas to flow to the outlet end of the air intake assembly 200. More specifically, the air intake assembly 200 alternately introduces deposition gas and etching gas into the chamber body 100 to implement the Bosch process.

[0040] As shown in Figure 2, the switching valve plate 220 is opposite to the air inlet window 210 and is arranged adjacent to the air inlet window 210. The air inlet window 210 is provided with a first gas inlet 211 and a second gas inlet 212. For example, the first gas inlet 211 is used to introduce etching gas, and the second gas inlet 212 is used to introduce deposition gas. Of course, the first gas inlet 211 and the second gas inlet 212 can also respectively introduce other different types of process gases.

[0041] In the embodiment shown in FIG. 1 , the first gas inlet 211 may be in communication with an external first gas flow controller 510 , and the second gas inlet 212 may be in communication with an external second gas flow controller 610 .

[0042] As shown in Figures 2 to 4, the switching valve plate 220 is connected to the air inlet window 210. The switching valve plate 220 is used to control whether the first gas inlet port 211 and the second gas inlet port 212 are connected to the outlet end of the air inlet assembly 200. The switching valve plate 220 is movable relative to the air inlet window 210. In some embodiments, the switching valve plate 220 can be movable relative to the air inlet window 210. The switching valve plate 220 can be driven manually or by a movable driving member. For example, the movable driving member can be a linear driving member such as a linear module or a cylinder. In other embodiments, the switching valve plate 220 can also be rotatable relative to the air inlet window 210. The switching valve plate 220 rotates within its own plane to connect the gas path to the first gas inlet port 211 or the second gas inlet port 212. The switching valve plate 220 can be driven manually or by a driving source. For example, the driving source can be a driving source that provides rotational power such as an electric motor or a pneumatic motor.

[0043] The switching valve plate 220 can move between a first position and a second position relative to the air inlet window 210. The switching valve plate 220 is provided with an air path, which is connected to the air outlet end of the air inlet assembly 200. When the switching valve plate is in the first position, the first gas inlet 211 is connected to the air path, and the second gas inlet 212 is disconnected from the air path. At this time, the first gas enters the chamber body 100 through the air inlet assembly 200, thereby starting the first process. When the switching valve plate 220 is in the second position, the second gas inlet 212 is connected to the air path, and the first gas inlet 211 is disconnected from the air path. At this time, the second gas enters the chamber body 100 through the air inlet assembly 200, thereby starting the second process. For example, the first gas introduced into the first gas inlet 211 is an etching gas, and the first process is an etching process; the second gas introduced into the second gas inlet 212 is a deposition gas, and the second process is a deposition process. In this way, the switching valve plate 220 only needs to move a small distance so that the gas path thereon is connected to the first gas inlet 211 or the second gas inlet 212 to switch between the first gas and the second gas.

[0044] That is, by changing the movement position of the switching valve plate 220 , the first gas at the first gas inlet 211 or the second gas at the second gas inlet 212 can quickly enter the chamber body 100 through the gas inlet assembly 200 .

[0045] In the prior art, the distance between the control valve and the chamber body is relatively far. Therefore, when the control valve switches the gas, a large amount of process gas from the previous process still exists in the pipeline between the control valve and the chamber body, and enters the chamber body with the next process to participate in the next process, thereby causing the etched side wall to produce an uneven scallop structure.

[0046] In this embodiment, by changing the position of the switching valve plate 220, the first gas inlet 211 can be connected to the outlet of the gas inlet assembly 200, or the second gas inlet 212 can be connected to the outlet of the gas inlet assembly 200, while the outlet of the gas inlet assembly 200 is always connected to the chamber body 100. Since the air inlet window 210 is located at the top of the chamber body 100, the switching valve plate 220 directly intercepts the previous process gas at the position of the air inlet window 210. In other words, by positioning the switching valve plate 220 at the position of the air inlet window 210, the distance between the switching valve plate 220 and the chamber body 100 is greatly reduced, thereby reducing the space between the switching valve plate 220 and the chamber body 100 where residual gas from the previous process can be retained to almost negligible, effectively preventing residual gas from the previous process from entering the chamber body 100 and participating in the next process, thereby preventing the two process gases from mixing and participating in the process, which is beneficial to improving the process effect. Moreover, since the switching valve plate 220 is arranged close to the chamber body 100, the process gas enters the chamber body 100 at a faster speed, avoiding the problem of air intake delay caused by the circulation of process gas in the pipeline. The air intake delay time is effectively shortened, so the pressure control process of the chamber body 100 in the two process steps will also be faster and more accurate, thereby making the pressure difference value of the chamber body 100 in the two process steps easier to control.

[0047] In some embodiments, the first gas inlet 211 is used to introduce etching gas, and the second gas inlet 212 is used to introduce deposition gas. The two process steps are etching and deposition, respectively. The gas inlet assembly 200 in this embodiment can be used in a Bosch etching process. The rapid switching between the etching and deposition processes can effectively avoid the formation of an uneven scalloped structure on the sidewalls of the deep holes obtained by etching, making the sidewalls of the deep holes smoother, avoiding any impact on subsequent processes, and facilitating improved device yield.

[0048] In other embodiments, as shown in FIG2 , the first gas inlet 211 and the second gas inlet 212 are arranged in pairs. Multiple pairs of the first gas inlet 211 and the second gas inlet 212 are spaced apart around the circumference of the air inlet window 210. In the example of FIG2 , six pairs of the first gas inlet 211 and the second gas inlet 212 are shown as an example. Those skilled in the art will appreciate that more or fewer pairs of the first gas inlet 211 and the second gas inlet 212 are also feasible. Accordingly, multiple gas paths are spaced apart, and each gas path corresponds to each pair of the first gas inlet 211 and the second gas inlet 212. With this embodiment, multiple pairs of the second gas inlet 212 and the first gas inlet 211 are used to achieve simultaneous gas intake from multiple second gas inlets 212 or simultaneous gas intake from multiple first gas inlets 211. This increases the gas outlet area while improving gas intake efficiency and process efficiency, which is beneficial to improving gas intake uniformity.

[0049] Exemplarily, the air inlet window 210 can be a circular structure, and the second gas inlet port 212 and the first gas inlet port 211 can be opened on the peripheral surface of the air inlet window 210, but this is not restrictive. In some other embodiments, the second gas inlet port 212 and the first gas inlet port 211 can also be opened on the upper end surface of the air inlet window 210. The embodiment of the present application does not limit the opening position of the second gas inlet port 212 and the first gas inlet port 211.

[0050] In this embodiment, six pairs of second gas inlets 212 and first gas inlets 211 are spaced apart in the circumferential direction of the air inlet window 210, and six gas paths are spaced apart, for example, and each gas path corresponds to each pair of second gas inlets 212 and first gas inlet 211.

[0051] Of course, in other embodiments, the air inlet window 210 may also be provided with a first gas inlet 211 and a second gas inlet 212 .

[0052] In the embodiment shown in Figures 1 to 4, the air intake assembly 200 further includes a blocking member disposed between the air intake window 210 and the switching valve plate 220. The air path includes a first air path section 221 and a second air path section 222. The outlet end of the first air path section 221 and the outlet end of the second air path section 222 are respectively connected to the air outlet end of the air intake assembly 200. The blocking member selectively blocks the first air path section 221 or the second air path section 222 according to the movement position of the switching valve plate 220. For example, the blocking member may be an elastic structure or a rigid structure, and the present embodiment does not impose any specific limitation on the structure of the blocking member.

[0053] Referring to Figure 3, when the switching valve plate 220 is in the first position, the first gas inlet 211 is connected to the inlet end of the first gas path section 221, and the blocking member blocks the inlet end of the second gas path section 222, so that the second gas inlet 212 cannot be connected to the second gas path section 222. Referring to Figure 4, when the switching valve plate 220 is in the second position, the second gas inlet 212 is connected to the inlet end of the second gas path section 222, and the blocking member blocks the inlet end of the first gas path section 221, so that the first gas inlet 211 cannot be connected to the first gas path section 221.

[0054] That is to say, the first gas section 221 and the second gas section 222 both have an inlet end and an outlet end, and the outlet end of the first gas section 221 and the outlet end of the second gas section 222 are respectively connected to the outlet end of the air intake component 200; and when the switching valve plate 220 is in the first position as shown in Figure 3, the first gas inlet 211 is connected to the inlet end of the first gas section 221, and the sealing member blocks the inlet end of the second gas section 222; and when the switching valve plate 220 is in the second position as shown in Figure 4, the second gas inlet 212 is connected to the inlet end of the second gas section 222, and the sealing member blocks the inlet end of the first gas section 221.

[0055] Illustratively, when the switching valve plate 220 is in the first position, the first gas inlet 211 is opposite to the first gas path section 221, and the second gas inlet 212 is staggered with the second gas path section 222; when the switching valve plate 220 is in the second position, the first gas inlet 211 is staggered with the first gas path section 221, and the second gas inlet 212 is opposite to the second gas path section 222.

[0056] According to the movement position of the switching valve plate 220, the blocking member directly blocks the first gas section 221 or the second gas section 222, thereby controlling the on-off connection between the first gas inlet 211 and the first gas section 221 and the on-off connection between the second gas inlet 212 and the second gas section 222, thereby preventing part of the first gas from flowing into the first gas section 221 when the first gas inlet 211 and the first gas section 221 are not connected, and also preventing part of the second gas from flowing into the second gas section 222 when the second gas inlet 212 and the second gas section 222 are not connected, which is beneficial to improving the isolation effect of gas during the process.

[0057] Moreover, the corresponding gas path section is blocked by the blocking member. When one of the first gas and the second gas flows to the gas outlet end of the air inlet component 200, the other is in a holding state. Then, the air pressure of the gas path section corresponding to the gas in the holding state gradually rises. When the switching valve plate 220 moves to release the gas, the gas will flow into the corresponding gas path section faster, which is beneficial to increase the gas switching speed and thus improve the process effect.

[0058] Of course, in other embodiments, the air intake assembly 200 may not be provided with a sealing member. When the switching valve plate 220 is in the first position, the switching valve plate 220 directly blocks the second gas inlet 212, so that the second gas inlet 212 is not connected to the gas circuit; when the switching valve plate 220 is in the second position, the switching valve plate 220 directly blocks the first gas inlet 211, so that the first gas inlet 211 is not connected to the gas circuit.

[0059] In some embodiments, there is one blocking member, and the position of the blocking member relative to the air inlet window 210 is fixed. When the switching valve plate 220 is in the first position, the blocking member blocks the second gas path section 222 to prevent the second gas from entering the chamber body 100 through the gas path; when the switching valve plate 220 is in the second position, the blocking member blocks the first gas path section 221 to prevent the first gas from entering the chamber body 100 through the gas path.

[0060] In another embodiment, the number of the blocking members is at least two, including a first blocking member 231 and a second blocking member 232. The first blocking member 231 is arranged at the inlet end of the first gas path section 221, and the second blocking member 232 is arranged at the inlet end of the second gas path section 222. The blocking members are elastic structures. The positions of the first blocking member 231 and the second blocking member 232 relative to the air intake window 210 are fixed. During the movement of the switching valve plate 220, the first blocking member 231 and the second blocking member 232 can produce elastic deformation, thereby changing the shapes of the first blocking member 231 and the second blocking member 232. The deformation state of the first blocking member 231 determines whether the first blocking member 231 blocks the first gas path section 221. Similarly, the deformation state of the second blocking member 232 determines whether the second blocking member 232 blocks the second gas path section 222.

[0061] When the switching valve plate 220 is in the first position, as shown in FIG3 , the first blocking member 231 is in an elastically deformed state, its shape changes, and the first blocking member 231 no longer blocks the first gas path segment 221, allowing the first gas inlet 211 to communicate with the inlet end of the first gas path segment 221. The second blocking member 232 blocks the inlet end of the second gas path segment 222. When the switching valve plate 220 is in the second position, as shown in FIG4 , the second blocking member 232 is in an elastically deformed state, its shape changes, and the second blocking member 232 no longer blocks the second gas path segment 222. The second gas inlet 212 communicates with the inlet end of the second gas path segment 222. The first blocking member 231 blocks the inlet end of the first gas path segment 221.

[0062] In some embodiments, when the switching valve plate 220 is in the first position, as shown in FIG3 , the first blocking member 231 is in a compressed state, so the volume of the first blocking member 231 is relatively small, and the first blocking member 231 does not block the inlet end of the first gas path segment 221. At the same time, the second blocking member 232 does not produce elastic deformation, that is, the second blocking member 232 is in a relaxed state, the volume of the second blocking member 232 is relatively large, and the second blocking member 232 directly blocks the inlet end of the second gas path segment 222. When the switching valve plate 220 is in the second position, as shown in FIG4 , the first blocking member 231 does not produce elastic deformation, that is, the first blocking member 231 is in a relaxed state, the volume of the first blocking member 231 is relatively large, and the first blocking member 231 directly blocks the inlet end of the first gas path segment 221. At the same time, the second blocking member 232 is in a compressed state, the volume of the second blocking member 232 is relatively small, and the second blocking member 232 does not block the inlet end of the second gas path segment 222.

[0063] In this embodiment, at least two elastic blocking members are provided, and whether the corresponding gas path section is blocked is determined by whether the blocking members produce elastic deformation. The blocking members that produce elastic deformation have better blocking effects and improved sealing performance.

[0064] In other embodiments, the air intake assembly 200 further includes a first stopper 241 and a first fixing member 251, which are respectively located on both sides of the first blocking member 231, the first stopper 241 is connected to the air intake window 210, and the first fixing member 251 is connected to the switching valve plate 220. When the switching valve plate 220 switches from the second position to the first position, the distance between the first stopper 241 and the first fixing member 251 changes, and the first blocking member 231 is located therebetween. Therefore, the first stopper 241 and the first fixing member 251 squeeze the first blocking member 231 to cause elastic deformation of the first blocking member 231. The first stopper 241 and the first fixing member 251 can both be block-shaped structures, or other structures. The embodiments of the present application do not limit the structures of the first stopper 241 and the first fixing member 251.

[0065] For example, the first stopper 241 can be fixedly connected to the air intake window 210 by welding, bonding, etc., and the position of the first stopper 241 relative to the air intake window 210 is fixed; the first fixing member 251 and the switching valve plate 220 can also be fixedly connected by welding, bonding, etc., so that the first fixing member 251 and the switching valve plate 220 are relatively fixed, and the first fixing member 251 moves with the switching valve plate 220.

[0066] With this embodiment, whether the first blocking member 241 and the first fixing member 251 squeeze the first blocking member 231 is directly used to control whether the first blocking member 231 generates elastic deformation. That is, by switching the movement position of the valve plate 220, it is directly controlled whether the first blocking member 231 generates elastic deformation. In this way, through the mechanical structure, it is beneficial to accurately change the deformation state of the first blocking member 231, and avoid the use of electric control and other methods, which may cause the first blocking member 231 to be unable to accurately block the first gas path section 221 due to abnormal conditions such as power failure.

[0067] Of course, in other embodiments, the first blocking member 231 may be an electro-deformable element, and whether the first blocking member 231 generates elastic deformation is controlled by whether the first blocking member 231 is energized; or, the first blocking member 231 may be a thermo-deformable element, and whether the first blocking member 231 generates elastic deformation is controlled by whether the first blocking member 231 is heated.

[0068] In some embodiments, the air intake assembly 200 further includes a second stopper 242 and a second fixing member 252, which are respectively located on either side of the second blocking member 232. The second stopper 242 is connected to the air intake window 210, and the second fixing member 252 is connected to the switching valve plate 220. When the switching valve plate 220 switches from the first position to the second position, the distance between the second stopper 242 and the second fixing member 252 changes, and the second blocking member 232 is located therebetween. Therefore, the second stopper 242 and the second fixing member 252 squeeze the second blocking member 232, causing the second blocking member 232 to produce elastic deformation. The second stopper 242 and the second fixing member 252 can both be block-shaped structures, or other structures. The present embodiment of the application does not limit the structures of the second stopper 242 and the second fixing member 252.

[0069] For example, the second stopper 242 can be fixedly connected to the air intake window 210 by welding, bonding, etc., and the position of the second stopper 242 relative to the air intake window 210 is fixed; the second fixing member 252 and the switching valve plate 220 can also be fixedly connected by welding, bonding, etc., so that the second fixing member 252 and the switching valve plate 220 are relatively fixed, and the second fixing member 252 moves with the switching valve plate 220.

[0070] With this embodiment, whether the second blocking member 242 and the second fixing member 252 squeeze the second blocking member 232 is directly used to control whether the second blocking member 232 produces elastic deformation. That is, by switching the movement position of the valve plate 220, it is directly controlled whether the second blocking member 232 produces elastic deformation. In this way, through the mechanical structure, it is beneficial to accurately change the deformation state of the second blocking member 232, and avoid the use of electric control and other methods due to abnormal conditions such as power failure, which may cause the second blocking member 232 to be unable to accurately block the second gas path section 222.

[0071] Of course, in other embodiments, the second blocking member 232 may be an electro-deformable element, and whether the second blocking member 232 generates elastic deformation is controlled by whether the second blocking member 232 is energized; or, the second blocking member 232 may be a thermo-deformable element, and whether the second blocking member 232 generates elastic deformation is controlled by whether the second blocking member 232 is heated.

[0072] In summary, referring to Figures 3 and 4, during the movement of the switching valve plate 220 from the second position to the first position, the distance between the first stopper 241 and the first fixing member 251 decreases, and the first blocking member 231 is compressed, so the first blocking member 231 cannot block the first gas path section 221, while the distance between the second stopper 242 and the second fixing member 252 increases, the second blocking member 232 is not compressed, and the second blocking member 232 blocks the second gas path section 222. The first gas inlet 211 is connected to the chamber body 100 through the first gas path section 221, and the chamber body 100 can be opened. Start the first process; in the process of the switching valve plate 220 moving from the first position to the second position, the distance between the first stopper 241 and the first fixing member 251 increases, and the first blocking member 231 is not compressed, so the first blocking member 231 blocks the first gas path section 221, and the distance between the second stopper 242 and the second fixing member 252 decreases, the second blocking member 232 is compressed, and the second blocking member 232 cannot block the second gas path section 222. The second gas inlet 212 is connected to the chamber body 100 through the second gas path section 222, and the second process can be started in the chamber body 100.

[0073] In some embodiments, as shown in Figures 3 and 4 , the air intake assembly 200 further includes a first sealing member 271, which is disposed between the switching valve plate 220 and the air intake window 210. The first sealing member 271 is located between the second gas inlet 212 and the first gas inlet 211 to isolate the second gas inlet 212 from the first gas inlet 211. The first sealing member 271 may be a sealing structure such as a sealing ring or a sealing strip, or other sealing structures.

[0074] Illustratively, the switching valve plate 220 can be provided with a groove, and the first gas inlet 211 and the second gas inlet 212 can be connected to the gas path through the groove, and the first seal 271 is provided in the groove, and the first seal 271 is a strip structure, and the two ends of the first seal 271 respectively abut against the groove wall of the groove, dividing the groove into two parts, and the two parts are respectively connected to the first gas inlet 211 and the second gas inlet 212, thereby sealing and isolating the second gas inlet 212 and the first gas inlet 211.

[0075] In this embodiment, the first sealing member 271 is used to isolate the second gas inlet 212 from the first gas inlet 211 , thereby preventing gas cross-talk between the first gas inlet 211 and the second gas inlet 212 , thereby improving the sealing performance of the gas inlet assembly 200 .

[0076] In some embodiments, the air intake assembly 200 further includes a second seal 272, which is disposed between the air intake window 210 and the switching valve plate 220 to seal the gap between the air intake window 210 and the switching valve plate 220. Exemplarily, the second seal 272 can be a sealing ring disposed around the first gas inlet 211 and the second gas inlet 212. As shown in FIG3 , the sealing ring surrounds one end of the first gas inlet 211 near the first gas path section 221 and one end of the second gas inlet 212 near the second gas path section 222. In other words, the sealing ring also surrounds both the first gas path section 221 and the second gas path section 222, thereby preventing gas from leaking from the gap between the air intake window 210 and the switching valve plate 220. Of course, the second seal 272 can also be other sealing structures. In further embodiments, a second sealing groove is provided on the side of the air intake window 210 facing the switching valve plate 220, and the second seal 272 is disposed in the second sealing groove.

[0077] In this embodiment, the second sealing member 272 is used to seal the gap between the air intake window 210 and the switching valve plate 220 to prevent the first gas and the second gas from flowing out through the gap between the air intake window 210 and the switching valve plate 220, which is beneficial to improving the sealing performance.

[0078] Of course, in some other embodiments, the air intake assembly 200 may not be provided with the first seal 271 and the second seal 272, and the sealing performance can be improved by increasing the contact tightness between the switching valve plate 220 and the air intake window 210 to avoid cross-flow and leakage.

[0079] In the solution of the present application, referring to Figures 2-6, the air intake assembly 200 also includes: a flow equalizer plate 260, which is located on the side of the switching valve plate 220 facing away from the air intake window 210, and the flow equalizer plate 260 is provided with a plurality of flow equalizer holes 262, and the air path is connected to the air outlet end of the air intake assembly 200 through each flow equalizer hole 262.

[0080] In this embodiment, the uniform flow holes 262 on the uniform flow plate 260 are used to divert the first gas or the second gas flowing into the switching valve plate 220 so that the first gas or the second gas flows out more evenly, which is beneficial to improving process uniformity.

[0081] Of course, in some other embodiments, the air intake assembly 200 may not be provided with the flow equalizer 260 , and the air path of the switching valve plate 220 is directly connected to the outlet end of the air intake assembly 200 .

[0082] In some embodiments, the flow equalizing holes 262 on the flow equalizing plate 260 are directly connected to the gas path.

[0083] In other embodiments, the flow plate 260 is further provided with a flow balancing groove 261, which forms a flow balancing space with the switching valve plate 220. The flow balancing groove 261 connects the multiple flow balancing holes 262 and the gas path, that is, the gas path is connected to the gas outlet end of the air inlet assembly 200 through the flow balancing groove 261 and the flow balancing holes 262. For example, the flow balancing groove 261 can be a circular groove or a groove of other shapes, as long as it can be connected to each flow balancing hole 262. With this embodiment, before the process gas enters the flow balancing hole 262 from the first gas inlet 211 or the second gas inlet 212, it is first diffused and mixed through the flow balancing groove 261, and then further homogenized through each flow balancing hole 262, which is beneficial to improving the flow balancing performance of the flow plate 260.

[0084] In an embodiment where multiple second gas inlets 212 and multiple first gas inlets 211 are provided, as shown in Figures 5 and 6, the flow uniforming plate 260 is provided with multiple flow uniforming areas along its circumference, and each flow uniforming area is provided with a flow uniforming groove 261 and multiple flow uniforming holes 262. The flow uniforming groove 261 corresponds one-to-one to the first gas inlet 211 and the second gas inlet 212. In other words, when there are multiple groups of first gas inlets 211 and second gas inlets 212, the first gas inlet 211 and the second gas inlet 212 of the same group correspond to one flow uniforming groove 261.

[0085] In some embodiments, the air intake assembly 200 further includes a third seal 273 disposed between the flow equalizer plate 260 and the switching valve plate 220 to seal the gap between the flow equalizer plate 260 and the switching valve plate 220. Exemplarily, the third seal 273 may be a sealing ring or other sealing structure; a third seal 273 is provided outside each flow equalizer region of the flow equalizer plate 260. In further embodiments, each flow equalizer region of the flow equalizer plate 260 is provided with a third sealing groove, within which the third seal 273 is disposed.

[0086] In this embodiment, the third sealing member 273 is used to seal the gap between the flow equalizing plate 260 and the switching valve plate 220 to prevent the first gas and the second gas from flowing out through the gap therebetween, thereby further improving the sealing performance.

[0087] Of course, in other embodiments, the air intake assembly 200 may not be provided with the third sealing member 273 , and the sealing performance can be improved by increasing the contact tightness between the switching valve plate 220 and the flow equalizing plate 260 to avoid cross-flow and leakage.

[0088] Based on the gas inlet assembly 200 disclosed in the present application, an embodiment of the present application further discloses a semiconductor process chamber. Referring to FIG1 , the semiconductor process chamber includes a chamber body 100 and the gas inlet assembly 200 of the above embodiment. The chamber body 100 provides a place for the semiconductor process, and the interior of the chamber body 100 is a vacuum environment. The gas outlet of the gas inlet assembly 200 is connected to the chamber body 100, and the gas inlet assembly 200 is used to provide process gas into the chamber body 100. For example, the chamber body 100 is provided with an gas inlet 101, and the gas inlet assembly 200 is disposed at the gas inlet 101. In a further embodiment, an gas inlet window 210 is located at the gas inlet 101, and the gas inlet window 210 is used to seal the gas inlet 101.

[0089] In this embodiment, the semiconductor process chamber may be applied to the Bosch process, and the process gas includes an etching gas and a deposition gas. The etching gas may be a fluorine-based gas, and the deposition gas may be a carbon-based gas.

[0090] The semiconductor process chamber utilizes the above-mentioned gas inlet assembly 200 to achieve rapid switching between the first gas and the second gas, avoiding the problem of delayed gas intake of the chamber body 100, and is conducive to accurately controlling the pressure difference value of the chamber body 100 during different process steps. The semiconductor process chamber can be used to perform a Bosch etching process to etch high aspect ratio holes. Since the etching and deposition gases can be switched quickly, the side walls of the etched holes are smoother, which is conducive to improving the yield of the device.

[0091] For example, as shown in FIG1 , a base 110 is provided in the chamber body 100 , and the base 110 is used to support a chip 111 , which may be a silicon wafer. An inner lining 120 is provided on the periphery of the base 110 , and the inner lining 120 is provided to prevent the process gas from contaminating the inner wall of the chamber body 100 or other devices in the chamber body 100 .

[0092] In the solution of the present application, as shown in FIG1 , the chamber body 100 is provided with an exhaust port, and the semiconductor process chamber further includes a pressure control valve 400, which is provided at the exhaust port to adjust the opening of the exhaust port. The pressure control valve 400 can be a solenoid valve, a butterfly valve, a ball valve, or other valve body that can perform switching and regulating effects. The embodiment of the present application does not limit the type of the pressure control valve 400. In this way, by adjusting the pressure control valve 400, the first gas or the second gas that completes the process is discharged to the outside of the chamber body 100 through the exhaust port, which facilitates the chamber body 100 to proceed to the next process step and realizes rapid switching between different process steps.

[0093] In some embodiments, the semiconductor process chamber further includes: a vacuum pump 300, the inlet end of the vacuum pump 300 is connected to the exhaust port, and the vacuum pump 300 is used to provide suction power; the number of vacuum pumps 300 is at least two, including a dry pump 320 and a molecular pump 310, the inlet end of the molecular pump 310 is directly connected to the exhaust port, and the inlet end of the dry pump 320 is directly connected to the outlet end of the molecular pump 310, the molecular pump 310 is suitable for pumping air in a high vacuum environment, and the dry pump 320 is suitable for pumping air in a lower vacuum environment.

[0094] In some embodiments, the pressure control valve 400 includes a valve plate 410 and a driver 420. The driver 420 is connected to the valve plate 410 and drives the valve plate 410 to rotate to increase or decrease the opening of the exhaust port. For example, the driver 420 can be a driving source capable of generating rotational power, such as an electric motor or a pneumatic motor.

[0095] In other embodiments, as shown in Figures 7 and 8, the pressure control valve 400 includes at least two valve plates 410 and a driver 420. Each valve plate 410 is rotatably disposed at the exhaust port to open or close the exhaust port. The driver 420 is connected to each valve plate 410. The driver 420 can drive each valve plate 410 to rotate simultaneously. The valve plates 410 rotate away from or toward each other to increase or decrease the opening of the exhaust port. Exemplarily, there are at least two drivers 420, and the drivers 420 correspond to the valve plates 410 one-to-one. Each driver 420 drives the corresponding valve plate 410 to rotate, thereby causing the valve plates 410 to move away from or toward each other.

[0096] In the process of adjusting the opening of the exhaust port, at least two valve plates 410 operate simultaneously. Compared with the previous embodiment, the rotation stroke of each valve plate 410 is reduced, that is, the rotation angle of each valve plate 410 is reduced, so the driving time of the driving member 420 is shortened, and the action time of the pressure control valve 400 is shortened, thereby realizing rapid exhaust of the vacuum pump 300 and further improving the switching efficiency between the etching process and the deposition process.

[0097] In the embodiment shown in FIG1 , the semiconductor process chamber further includes a first gas flow controller 510 and a first gas extraction pipeline 520. The first end of the first gas extraction pipeline 520 and the first gas inlet 211 are respectively connected to the outlet end of the first gas flow controller 510, and the second end of the first gas extraction pipeline 520 is connected to the inlet end of the vacuum pump 300. Exemplarily, the first gas inlet 211 is connected to the outlet end of the first gas flow controller 510 via a first pipeline, and the first gas flow controller 510 controls the flow rate of the first gas entering the first gas inlet 211. The first end of the first gas extraction pipeline 520 is directly connected to the first pipeline, and the second end of the first gas extraction pipeline 520 is connected to the inlet end of the dry pump 320.

[0098] The first air extraction pipeline 520 is provided with a first control valve 530. Exemplarily, the first control valve 530 includes a first needle valve 531 and a first pneumatic shut-off valve 532. The first needle valve 531 and the first pneumatic shut-off valve 532 are spaced apart and arranged in the first air extraction pipeline 520. Thus, the first pneumatic shut-off valve 532 controls the on-off of the first air extraction pipeline 520, and the first needle valve 531 can precisely adjust the air flow in the first air extraction pipeline 520.

[0099] With this embodiment, if an abnormality occurs between the first gas inlet 211 and the first gas flow controller 510 and the first gas inlet 211 cannot normally intake gas, the first control valve 530 is used to open the first gas extraction pipeline 520, so that the first gas enters the vacuum pump 300 through the first gas extraction pipeline 520, thereby avoiding excessive gas pressure due to holding the breath.

[0100] In some embodiments, the semiconductor process chamber further includes a second gas flow controller 610 and a second gas extraction pipeline 620. The first end of the second gas extraction pipeline 620 and the second gas inlet 212 are respectively connected to the outlet end of the second gas flow controller 610, and the second end of the second gas extraction pipeline 620 is connected to the inlet end of the vacuum pump 300. Exemplarily, the second gas flow controller 610 is connected to the outlet end of the second gas flow controller 610 via the second pipeline. The second gas flow controller 610 controls the flow rate of the second gas entering the second gas inlet 212. The first end of the second gas extraction pipeline 620 is directly connected to the second pipeline, and the second end of the second gas extraction pipeline 620 is connected to the inlet end of the dry pump 320.

[0101] The second air extraction pipeline 620 is provided with a second control valve 630. Exemplarily, the second control valve 630 includes a second needle valve 631 and a second pneumatic shut-off valve 632. The second needle valve 631 and the second pneumatic shut-off valve 632 are spaced apart from each other in the second air extraction pipeline 620. Thus, the second pneumatic shut-off valve 632 controls the on-off of the second air extraction pipeline 620, and the second needle valve 631 can precisely adjust the air flow in the second air extraction pipeline 620.

[0102] With this embodiment, if an abnormality occurs between the second gas inlet 212 and the second gas flow controller 610 and the second gas inlet 212 cannot normally intake gas, the second control valve 630 is used to open the second exhaust pipeline 620, so that the second gas enters the vacuum pump 300 from the second exhaust pipeline 620, thereby avoiding excessive gas pressure due to holding the breath.

[0103] In some embodiments, the semiconductor processing chamber further includes a pressure sensing element disposed within the chamber body 100 to detect the air pressure within the chamber body 100. The pressure sensing element may be, but is not limited to, a pressure sensor, and is communicatively connected to the pressure control valve 400. When the first gas inlet 211 is connected to the gas circuit, the pressure control valve 400 is opened to a first opening corresponding to the pressure value detected by the pressure sensing element, thereby maintaining the first air pressure value in the chamber body 100. When the second gas inlet 212 is connected to the gas circuit, the pressure control valve 400 is opened to a second opening corresponding to the pressure value detected by the pressure sensing element, thereby maintaining the second air pressure value in the chamber body 100. The difference between the first and second air pressure values ​​is within a preset pressure differential range.

[0104] For example, the pressure control range of the pressure control valve 400 is 30 mTorr-200 mTorr. The first air pressure value may be 75 mTorr, the second air pressure value may be 55 mTorr, and the preset pressure differential range may be 10 mTorr-30 mTorr. The difference between the first and second air pressure values ​​is 20 mTorr, so the difference between the two is within the preset pressure differential range. Of course, the first and second air pressure values ​​may also be other values, and the preset pressure differential range can be set as needed.

[0105] It should be noted that during the etching process, the higher the pressure in the chamber body 100, the faster the etching rate; during the deposition process, the lower the pressure in the chamber body 100, the higher the deposition uniformity. Ideally, when the difference between the first and second pressure values ​​reaches 150 mTorr, the etching rate and throughput are higher.

[0106] By adopting this embodiment, the opening of the pressure control valve 400 is adjusted according to the air pressure of the chamber body 100, so that the chamber body 100 is maintained at an appropriate air pressure value during the first process and the second process, respectively. This is beneficial to controlling the pressure difference of the chamber body 100 during the first process and the second process to be maintained within an appropriate range, and further beneficial to taking into account both process efficiency and process uniformity.

[0107] In some embodiments, the semiconductor process chamber further includes a controller, the controller including at least one memory and at least one processor, the memory storing a computer program, and the computer program, when executed by the processor, implementing the steps of the semiconductor process method, the semiconductor process method including:

[0108] When executing the first process step, the switching valve plate 220 is controlled to move to the first position so that the first gas enters the chamber body 100 through the first gas inlet 211; when executing the second process step, the switching valve plate 220 is controlled to move to the second position so that the second gas enters the chamber body 100 through the second gas inlet 212.

[0109] For example, the controller can be a host computer or a slave computer. The controller can directly control the switching valve plate 220 or control a driving member that drives the switching valve plate 220 to move the switching valve plate 220 to the first position or the second position, thereby introducing the corresponding process gas into the interior of the chamber body 100.

[0110] By adopting this embodiment, a controller is used to realize an automated switching process of the movement position of the switching valve plate 220, which is conducive to quickly switching the movement position of the switching valve plate 220, and then quickly switching the first process step and the second process step, which is conducive to further shortening the switching time of the first gas and the second gas, and further effectively avoiding the problem of delayed air intake of the chamber body 100. The pressure control process of the chamber body 100 in the first process step and the second process step will also be faster and more accurate, thereby improving the process effect.

[0111] In a further embodiment, the first process step is an etching step, the first gas is an etching gas, the second process step is a deposition step, and the second gas is a deposition gas. The semiconductor process method further includes: alternating the first process step and the second process step, that is, alternating the etching step and the deposition step.

[0112] With this embodiment, the controller controls the switching valve plate 220 to continuously switch between the first position and the second position, thereby achieving rapid switching between the etching step and the deposition step. In the process of alternatingly executing the etching step and the deposition step, the problem of air intake delay in each process step is effectively avoided, the duration of the entire process is effectively shortened, and the process of the chamber body 100 in each process step is faster and more accurate, which is conducive to further improving the process effect.

[0113] In the related art, since the first gas or the second gas is introduced into the chamber body 100 through a pipeline, there is a delay in the time for the first gas and the second gas to enter the chamber body 100. The pressure detection element also needs to delay the detection of the pressure value of the chamber body 100, and then the pressure control valve 400 also needs to delay the action. Since there are delays in both the air intake and pressure control processes, the RF loading also needs to be delayed, resulting in the extension of the time of each cycle process of the entire Bosch process. Moreover, due to the delay problem, it is difficult to control the gas pressure difference of the chamber body 100 during the etching process and the deposition process.

[0114] In the embodiment of the present application, the semiconductor process method includes a first process step and a second process step that are performed alternately. Specifically, the second process step includes controlling the switching valve plate 220 to move to a second position, and the second gas inlet 212 is connected to the chamber body 100 through a gas path, so that the second gas enters the chamber body 100 through the second gas inlet 212; the first process step includes controlling the switching valve plate 220 to move to a first position, and the first gas inlet 211 is connected to the chamber body 100 through a gas path, so that the first gas enters the chamber body 100 through the first gas inlet 211.

[0115] Exemplarily, the first process step is an etching step, and the second process step is a deposition step. The semiconductor process method is a Bosch process, which includes multiple cyclic processes, each of which includes the above-mentioned deposition step and etching step. Exemplarily, the etching step includes a first etching step and a second etching step, as shown in FIG9 .

[0116] The deposition step involves controlling the switching valve plate 220 to move to the second position, allowing deposition gas to rapidly enter the chamber body 100. Simultaneously, the pressure sensing element detects the pressure within the chamber body 100, and the pressure control valve 400 adjusts its opening based on the detected pressure to maintain the second pressure within the chamber body 100. The radio frequency (RF) is then activated for a duration of t = 0.2 seconds. In this step, a deposition gas, typically Ar or C₄F₄, is used to form a fluorocarbon polymer layer on the sides of the holes in the wafer 111. To prevent the formation of a fluorocarbon polymer layer on the bottom of the holes, a relatively low RF frequency is typically used.

[0117] The first etching step includes controlling the switching valve plate 220 to move to a first position, allowing etching gas to rapidly enter the chamber body 100. Simultaneously, the pressure sensing element detects the pressure within the chamber body 100, and the pressure control valve 400 adjusts its opening based on the detected pressure to maintain the chamber body 100 at a first pressure. The radio frequency and low frequency signals are then sequentially activated for a period of t = 0.2 seconds. The difference between the first and second pressures is within a predetermined pressure differential range.

[0118] The second etching step includes: continuing to sequentially turn on the radio frequency and the low frequency, maintaining the time t = 0.2s. The etching step is usually performed by plasma etching using gases such as Ar, O2, and SF6.

[0119] The number of Bosch process cycles can be set as needed. A single process is considered complete after the set number of cycles have been completed. Specifically, etching and deposition steps are performed alternately. At the end of an etching step, the etching gas is exhausted from the chamber body 100 while the deposition gas is injected. Similarly, at the end of a deposition step, the deposition gas is exhausted from the chamber body 100 while the etching gas is injected, repeating the process in this order.

[0120] Figure 10 shows a timing diagram of four cycle processes, wherein the second gas flow controller 610 controls the flow rate of the second gas to be 250 sccm, the first gas flow controller 510 controls the flow rate of the first gas to be 85 sccm, the RF voltage of the upper RF in the deposition step is 2200 dBW, the RF voltage of the upper RF in the etching step is 2794 dBW-2800 dBW, the RF voltage of the low frequency in the first etching step is 330 dBW-336 dBW, the gas pressure of the chamber body 100 during the deposition process is 75 mTorr, and the gas pressure of the chamber body 100 during the etching process is 55 mTorr. During the process, the gas pressure of the chamber body 100 presents a trapezoidal square wave waveform.

[0121] The above process flow directly utilizes the movement of the switching valve plate 220 to control the entry of the first or second gas into the chamber body 100. This effectively prevents residual gas from the previous process from entering the chamber body and participating in the next process, preventing the two process gases from mixing and participating in the process. Furthermore, there is essentially no delay in the entry of the first and second gases into the chamber body 100. Therefore, there is no need for the pressure sensing element to delay pressure detection, and there is no need to delay the loading of the radio frequency. This effectively shortens the duration of the entire semiconductor process and makes it easier to control the pressure difference in the chamber body 100 between the first and second process steps. Furthermore, this simplifies the control process of the semiconductor process, reduces the recipe parameters of the semiconductor process, and effectively reduces the difficulty of semiconductor process development.

[0122] In some other embodiments of the present application, please refer to Figures 12 and 13, the air intake component 200 includes a first air intake unit and a second air intake unit, and the first air intake unit and the second air intake unit are alternately connected to the air outlet end of the air intake component 200.

[0123] The first air intake unit includes a first air intake pipe 281, a first air extraction pipe 283, and a first switching valve plate 223. The air intake end of the first air intake pipe 281 is a first gas inlet 211, through which the first air intake pipe 281 can flow. The air intake of the first air extraction pipe 283 and the air outlet of the first air intake pipe 281 are arranged side by side. The first switching valve plate 223 is rotatably disposed between the air intake of the first air extraction pipe 283 and the air outlet of the first air intake pipe 281. When the first switching valve plate 223 rotates to different positions, it can open the air intake of the first air extraction pipe 283 and the air outlet of the first air intake pipe 281. In this way, the air outlet of the first air intake pipe 281 and the air intake of the first air extraction pipe 283 can be directly controlled by changing the rotational position of the first switching valve plate 223, eliminating the need to control the first air intake pipe 281 and the first air extraction pipe 283 separately.

[0124] The second air intake unit includes a second air intake pipe 282, a second air extraction pipe 284, and a second switching valve plate 224. The air intake end of the second air intake pipe 282 is the second gas inlet 212, through which the second air intake pipe 282 can flow. The air intake of the second air extraction pipe 284 and the air outlet of the second air intake pipe 282 are arranged side by side. The second switching valve plate 224 is rotatably disposed between the air intake of the second air extraction pipe 284 and the air outlet of the second air intake pipe 282. When the second switching valve plate 224 rotates to different positions, it can open the air intake of the second air extraction pipe 284 and the air outlet of the second air intake pipe 282. In this way, the air outlet of the second air intake pipe 282 and the air intake of the second air extraction pipe 284 can be directly controlled by changing the rotational position of the second switching valve plate 224, eliminating the need to control the second air intake pipe 282 and the second air extraction pipe 284 separately.

[0125] For example, the first switching valve plate 223 and the second switching valve plate 224 can be respectively connected to a driving source that provides rotational power, such as an electric motor or a pneumatic motor, to drive the first switching valve plate 223 or the second switching valve plate 224 to rotate. In a further embodiment, the linear drive member or the driving source described above for driving the switching valve plate 220 can be controlled by a controller. The controller controls the states of the two linear drives or the two driving sources, thereby causing the first air intake unit and the second air intake unit to alternately intake air.

[0126] In this embodiment, the first air inlet unit and the second air inlet unit are alternately connected to the air outlet end of the air inlet component 200. When the first air inlet unit is connected to the air outlet end of the air inlet component 200, the second switching valve plate 224 can be rotated to a position to open the second exhaust pipe 284, and the second exhaust pipe 284 exhausts the second air inlet pipe 282, that is, extracts the process gas in the second air inlet pipe 282 to prevent the residual process gas from entering the chamber body 100 and mixing with the process gas of the next process to participate in the next process; similarly, when the second air inlet unit is connected to the air outlet end of the air inlet component 200, the first switching valve plate 223 can be rotated to a position to open the first exhaust pipe 283, and the first exhaust pipe 283 exhausts the first air inlet pipe 281, that is, extracts the process gas in the first air inlet pipe 281 to prevent the residual process gas from the previous process from entering the chamber body 100 and mixing with the process gas of the next process to participate in the next process, which is beneficial to improving the process effect.

[0127] For example, the first gas inlet 281 can be fed with etching gas, and the second gas inlet 282 can be fed with deposition gas, and the two process processes are respectively the etching process and the deposition process. In the Bosch etching process engineering, the switching between the etching process and the deposition process can effectively avoid the generation of an uneven scallop structure on the sidewalls of the deep hole obtained by etching, making the sidewalls of the deep hole smoother, avoiding the impact on subsequent processes, and helping to improve the process effect, thereby helping to improve the yield of the device. Of course, the first gas inlet 211 and the second gas inlet 212 can also be fed with other different types of process gases.

[0128] In some other embodiments, when the first air inlet unit is connected to the outlet of the air inlet assembly 200, the first switching valve plate 223 is in a position that blocks the air inlet of the first air extraction pipe 283, that is, the first air extraction pipe 283 cannot extract air. In this embodiment, by blocking the first air extraction pipe 283, it is possible to prevent the first air extraction pipe 283 from extracting gas from the chamber body 100, thereby preventing the process from being affected.

[0129] For example, when the first air inlet unit is connected to the air outlet end of the air inlet assembly 200, the first switching valve plate 223 is in a position to open the first air inlet pipe 281, and the first air inlet pipe 281 takes in air. In this way, since the first exhaust pipe 283 is blocked, the first exhaust pipe 283 is prevented from extracting the gas in the first air inlet pipe 281, thereby ensuring that the first process gas entering the first air inlet pipe 281 can smoothly enter the chamber body 100.

[0130] Of course, in other embodiments, the air outlet of the first air extraction pipe 283 is connected to the first air extraction pump. When the first air intake unit is connected to the air outlet end of the air intake assembly 200, the first switching valve plate 223 is in a position to open the air intake of the first air extraction pipe 283, and the first air extraction pump is in a non-working state.

[0131] In a further embodiment, when the first air inlet unit is connected to the outlet of the air inlet assembly 200, indicating that the first air inlet unit is providing process gas to the chamber body 100, the second switching valve plate 224 is in a rotating state. Exemplarily, the rotational plane of the second switching valve plate 224 is parallel to the plane where the outlet of the second air inlet pipe 282 is located, and is also parallel to the plane where the inlet of the second air extraction pipe 284 is located.

[0132] Specifically, when the second switching valve plate 224 is in a rotating state, that is, during the rotation of the second switching valve plate 224, the air outlet of the second air inlet pipe 282 and the air inlet of the second air extraction pipe 284 both have three states: fully open, partially open and completely blocked. When the air outlet of the second air inlet pipe 282 is fully open, the air inlet of the second air extraction pipe 284 is completely blocked; when the air outlet of the second air inlet pipe 282 is partially opened, the air inlet of the second air extraction pipe 284 is also partially opened, that is, partially blocked; when the air outlet of the second air inlet pipe 282 is completely blocked, the air inlet of the second air extraction pipe 284 is fully opened, and the second switching valve plate 224 rotates to continuously switch the air outlet of the second air inlet pipe 282 and the air inlet of the second air extraction pipe 284 between the three states of fully open, partially open and completely blocked.

[0133] In this embodiment, when the first air intake unit is intake air, the rotating second switching valve plate 224 gradually opens the second air intake pipe 282 while gradually closing the second air extraction pipe 284, and vice versa, gradually closing the second air intake pipe 282 while gradually opening the second air extraction pipe 284. This allows the second air extraction pipe 284 to draw residual gas from the second air intake pipe 282, thus preventing the residual gas in the second air intake pipe 282 from affecting the process. Furthermore, since the second switching valve plate 224 is in a rotating state, the pipes of the second air intake unit are prevented from being in a gas-holding state. This prevents hardware damage caused by prolonged gas-holding during a long single-step process.

[0134] For example, the air inlet of the first air extraction pipe 283 and the air outlet of the first air inlet pipe 281 are both semicircular in structure, and the two are assembled into a circular structure. The first switching valve plate 223 is also semicircular in structure. The first switching valve plate 223 rotates about the axis of the circular structure, and the air inlet of the first air extraction pipe 283 is aligned with the air outlet of the first air inlet pipe 281. Thus, with this structure, the first switching valve plate 223 can completely overlap with the air inlet of the first air extraction pipe 283 during rotation, thereby completely blocking the air inlet of the first air extraction pipe 283, or the first switching valve plate 223 can completely overlap with the air outlet of the first air inlet pipe 281, thereby completely blocking the air outlet of the first air inlet pipe 281, which helps to simplify the structure of the air intake assembly 200.

[0135] Of course, the air inlet of the first air extraction pipe 283 , the air outlet of the first air inlet pipe 281 and the first switching valve plate 223 may also adopt other structures such as a square structure.

[0136] In a further embodiment, as shown in FIG12 , the first air inlet unit further includes a third control valve 291 and a first pipe section 285b. The first pipe section 285b is positioned opposite the air inlet of the first exhaust pipe 283 and the air outlet of the first air inlet pipe 281. The third control valve 291 is disposed in the first pipe section 285b to control the on / off operation of the first pipe section 285b. In the air inlet direction of the first air inlet pipe 281, the third control valve 291 is located downstream of the first switching valve plate 223. When the first air inlet unit is connected to the outlet of the air inlet assembly 200, the third control valve 291 is open, ensuring smooth flow of the first process gas into the chamber body 100. When the second air inlet unit is connected to the outlet of the air inlet assembly 200, the third control valve 291 is closed, preventing the second process gas from mixing with the first process gas and entering the chamber body 100, potentially affecting the process.

[0137] In some other embodiments, when the second air inlet unit is connected to the outlet of the air inlet assembly 200, the second switching valve plate 224 is in a position that blocks the air inlet of the second air extraction pipe 284, i.e., the second air extraction pipe 284 cannot extract air. In this embodiment, by blocking the second air extraction pipe 284, it is possible to prevent the second air extraction pipe 284 from extracting air from the chamber body 100, thereby preventing the process from being affected.

[0138] For example, when the second air inlet unit is connected to the air outlet end of the air inlet assembly 200, the second switching valve plate 224 is in a position to open the second air inlet pipe 282, and the second air inlet pipe 282 takes in air. In this way, since the second exhaust pipe 284 is blocked, the second exhaust pipe 284 is prevented from extracting the gas in the second air inlet pipe 282, thereby ensuring that the second process gas entering the second air inlet pipe 282 can smoothly enter the chamber body 100.

[0139] Of course, in other embodiments, the air outlet of the second air extraction pipe 284 is connected to the second air extraction pump. When the second air intake unit is connected to the air outlet end of the air intake assembly 200, the second switching valve plate 224 is in a position to open the air intake of the second air extraction pipe 284, and the second air extraction pump is in a non-working state.

[0140] In a further embodiment, when the second air inlet unit is connected to the outlet of the air inlet assembly 200, indicating that the second air inlet unit is providing process gas to the chamber body 100, the first switching valve plate 223 is in a rotating state. For example, the rotation plane of the first switching valve plate 223 is parallel to the plane where the outlet of the first air inlet pipe 281 is located, and is also parallel to the plane where the inlet of the first air extraction pipe 283 is located.

[0141] Specifically, referring to Figure 13, when the first switching valve plate 223 is in a rotating state, that is, during the rotation of the first switching valve plate 223, the air outlet of the first air inlet pipe 281 and the air inlet of the first air extraction pipe 283 both have three states: fully open, partially open and completely blocked. When the air outlet of the first air inlet pipe 281 is fully open, the air inlet of the first air extraction pipe 283 is completely blocked; when the air outlet of the first air inlet pipe 281 is partially opened, the air inlet of the first air extraction pipe 283 is also partially opened, that is, partially blocked; when the air outlet of the first air inlet pipe 281 is completely blocked, the air inlet of the first air extraction pipe 283 is fully opened, and the first switching valve plate 223 rotates to switch the air outlet of the first air inlet pipe 281 and the air inlet of the first air extraction pipe 283 between the three states of fully open, partially open and completely blocked.

[0142] In this embodiment, when the second air intake unit is intake air, the rotating first switching valve plate 223 gradually opens the first air intake pipe 281 while gradually closing the first air extraction pipe 283, and vice versa, gradually closing the first air intake pipe 281 while gradually opening the first air extraction pipe 283. This allows the first air extraction pipe 283 to draw residual gas from the first air intake pipe 281, thus preventing the residual gas in the first air intake pipe 281 from affecting the process. Furthermore, since the first switching valve plate 223 is in a rotating state, the pipes of the first air intake unit are prevented from being in a gas-holding state. This prevents hardware damage caused by prolonged gas-holding during a long single-step process.

[0143] For example, the air inlet of the second air extraction pipe 284 and the air outlet of the second air intake pipe 282 are both semicircular in structure, and the two are assembled to form a circular structure. The second switching valve plate 224 is also semicircular in structure. The second switching valve plate 224 rotates about the axis of the circular structure, and the air inlet of the second air extraction pipe 284 is aligned with the air outlet of the second air intake pipe 282. Thus, with this structure, the second switching valve plate 224 can completely overlap with the air inlet of the second air extraction pipe 284 during rotation, thereby completely blocking the air inlet of the second air extraction pipe 284, or the second switching valve plate 224 can completely overlap with the air outlet of the second air intake pipe 282, thereby completely blocking the air outlet of the second air intake pipe 282, which helps to simplify the structure of the air intake assembly 200.

[0144] Of course, the air inlet of the second air extraction pipe 284 , the air outlet of the second air inlet pipe 282 , and the second switching valve plate 224 may also adopt other structures such as a square structure.

[0145] In a further embodiment, the second air inlet unit further includes a fourth control valve 292 and a second pipe section 285c. The second pipe section 285c is located opposite the air inlet of the second exhaust pipe 284 and the air outlet of the second air inlet pipe 282. The fourth control valve 292 is disposed in the second pipe section 285c and controls the on / off operation of the second pipe section 285c. In the air inlet direction of the second air inlet pipe 282, the fourth control valve 292 is located downstream of the second switching valve plate 224. When the second air inlet unit is connected to the air outlet of the air inlet assembly 200, the fourth control valve 292 is open, ensuring that the second process gas can flow smoothly into the chamber body. When the first air inlet unit is connected to the air outlet of the air inlet assembly 200, the fourth control valve 292 is closed, preventing the first and second process gases from mixing and entering the chamber body 100, thereby affecting the process.

[0146] Exemplarily, the air intake assembly 200 further includes an outlet pipe 285, which includes a main pipe 285a, the first pipe section 285b, and the second pipe section 285c described above. The first pipe section 285b and the second pipe section 285c are respectively connected to the main pipe 285a. In this way, the first gas flowing through the first air intake pipe 281 or the second gas flowing through the second air intake pipe 282 flows out through the corresponding pipe sections and the main pipe 285a.

[0147] To sum up, when the first process is started, the third control valve 291 is in the open state, the first switching valve plate 223 is connected to the first air inlet pipe 281, and the first switching valve plate 223 cuts off the first air extraction pipe 283, and the first gas enters the chamber body to perform, for example, an etching step. At the same time, the fourth control valve 292 is in the closed state, and the second switching valve plate 224 rotates to quickly switch the air intake process and the air extraction process to avoid the pipeline of the second air intake unit being in a holding state; when the second process is started, the third control valve 291 is in the closed state, and the first switching valve plate 223 rotates to quickly switch the air intake process and the air extraction process to avoid the pipeline of the first air intake unit being in a holding state. At the same time, the fourth control valve 292 is in the open state, the second switching valve plate 224 is connected to the second air inlet pipe 282, and the second switching valve plate 224 cuts off the second air extraction pipe 284, and the second gas enters the chamber body to perform, for example, a deposition step.

[0148] Based on the gas inlet assembly 200 in the above embodiment, the present application also discloses a semiconductor process chamber. Referring to FIG11 , the semiconductor process chamber includes a chamber body 100 and the gas inlet assembly 200 in the above embodiment. The chamber body 100 is provided with a gas inlet 101, and the gas inlet assembly 200 is disposed at the gas inlet 101. In other words, the main channel 285a of the gas outlet pipe 285 is connected to the gas inlet 101 of the chamber body 100. In this way, the semiconductor process chamber, through the gas inlet assembly 200, prevents residual process gas from the previous process from entering the chamber body 100 and mixing with the process gas of the next process to participate in the next process, which is beneficial to improving the process effect.

[0149] Based on the air intake assembly 200 in the above embodiment, the embodiment of the present application further discloses a semiconductor process method, which includes a first process step and a second process step.

[0150] First process step: Controlling the connection between the first air inlet unit and the outlet of the air inlet assembly 200, the first switching valve plate 223 is in a position blocking the air inlet of the first air extraction pipe 283, and the second switching valve plate 224 is in a rotating state. Specifically, at this time, the first switching valve plate 223 is also in a position opening the first air inlet pipe 281, allowing the first process gas to flow into the chamber body 100. Furthermore, through the rotating second switching valve plate 224, the second air extraction pipe 284 can draw residual gas from the second air inlet unit.

[0151] Second process step: Control the communication between the second air inlet unit and the outlet of the air inlet assembly 200, so that the second switching valve plate 224 is in a position blocking the air inlet of the second air extraction pipe 284, and the first switching valve plate 223 is in a rotating state. Specifically, at this time, the second switching valve plate 224 is also in a position to open the second air inlet pipe 282, allowing the second process gas to flow into the chamber body 100. Furthermore, through the rotating first switching valve plate 223, the first air extraction pipe 283 can draw residual gas from the first air inlet unit.

[0152] Exemplarily, the first process gas may be an etching gas, the second process gas may be a deposition gas, the first process step is an etching step, the second process step is a deposition step, and the semiconductor process method is the Bosch process, which includes multiple cyclic processes, and each cyclic process includes the above-mentioned deposition step and etching step.

[0153] By adopting the above-mentioned semiconductor process method, the exhaust pipe is used for exhaust, which effectively prevents the residual gas from the previous process from entering the chamber body 100 and participating in the next process, and prevents the two process gases from mixing and participating in the process, which is beneficial to improving the process effect.

[0154] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. An air intake assembly, characterized in that: The air inlet assembly comprises an air intake window and a switching valve plate connected to each other, wherein the air intake window is provided with a first gas inlet port and a second gas inlet port, the switching valve plate is movable between a first position and a second position relative to the air intake window, and the switching valve plate is provided with an air path, the air path being in communication with the air outlet end of the air intake assembly; When the switching valve plate is located at the first position, the first gas inlet is connected to the gas circuit and the second gas inlet is disconnected from the gas circuit; When the switching valve plate is located at the second position, the second gas inlet is connected to the gas path and the first gas inlet is disconnected from the gas path.

2. The air intake assembly according to claim 1, characterized in that The air intake assembly further includes a blocking member, which is disposed between the air intake window and the switching valve plate. The air path includes a first air path section and a second air path section. The outlet end of the first air path section and the outlet end of the second air path section are respectively connected to the air outlet end of the air intake assembly. When the switching valve plate is located at the first position, the first gas inlet is connected to the inlet end of the first gas path section, and the blocking member blocks the inlet end of the second gas path section; When the switching valve plate is located at the second position, the second gas inlet is communicated with the inlet end of the second gas path section, and the blocking member blocks the inlet end of the first gas path section.

3. The air intake assembly according to claim 2, characterized in that There are at least two blocking members, including a first blocking member and a second blocking member. The first blocking member is provided at the inlet end of the first gas path section, and the second blocking member is provided at the inlet end of the second gas path section. The blocking members are elastic structures. When the switching valve plate is in the first position, the first blocking member is in an elastically deformed state, so that the first gas inlet is connected to the inlet end of the first gas path section, and the second blocking member blocks the inlet end of the second gas path section; When the switching valve plate is in the second position, the second blocking member is in an elastically deformed state so that the second gas inlet is connected to the inlet end of the second gas path section, and the first blocking member blocks the inlet end of the first gas path section.

4. The air intake assembly according to claim 3, characterized in that The air intake assembly further includes a first stopper and a first fixing member, the first stopper and the first fixing member being respectively located on either side of the first blocking member, the first stopper being connected to the air intake window, and the first fixing member being connected to the switching valve plate, and when the switching valve plate switches from the second position to the first position, the first stopper and the first fixing member squeeze the first blocking member to cause the first blocking member to generate elastic deformation; And / or, the air intake assembly also includes a second stopper and a second fixing member, the second stopper and the second fixing member are respectively located on both sides of the second blocking member, the second stopper is connected to the air intake window, and the second fixing member is connected to the switching valve plate. In the process of the switching valve plate switching from the first position to the second position, the second stopper and the second fixing member squeeze the second blocking member to cause the second blocking member to produce elastic deformation.

5. The air intake assembly according to claim 1, characterized in that The first gas inlet and the second gas inlet are arranged in pairs, and a plurality of pairs of the first gas inlet and the second gas inlet are arranged at intervals in the circumference of the air inlet window; A plurality of gas paths are arranged at intervals, and each gas path corresponds to each pair of the first gas inlet and the second gas inlet.

6. The air intake assembly according to claim 1, characterized in that The air intake assembly further includes a first seal, which is disposed between the air intake window and the switching valve plate, and is located between the second gas inlet and the first gas inlet to isolate the second gas inlet from the first gas inlet; And / or, the air intake assembly further includes a second sealing member, which is disposed between the air intake window and the switching valve plate to seal a gap between the air intake window and the switching valve plate.

7. The air intake assembly according to any one of claims 1 to 6, characterized in that: The air intake assembly further includes a flow equalizer plate, which is located on the side of the switching valve plate facing away from the air intake window. The flow equalizer plate is provided with a plurality of flow equalizer holes, and the air path is connected to the air outlet end of the air intake assembly through each of the flow equalizer holes.

8. The air intake assembly according to claim 7, characterized in that The flow equalizing plate is further provided with a flow equalizing groove, the flow equalizing groove and the switching valve plate form a flow equalizing space, and the flow equalizing groove is connected to the plurality of flow equalizing holes and the gas path.

9. The air intake assembly according to claim 7, characterized in that The air intake assembly further includes a third sealing member, which is disposed between the flow equalizer plate and the switching valve plate to seal a gap between the flow equalizer plate and the switching valve plate.

10. An air intake assembly, characterized in that: comprising a first air intake unit and a second air intake unit, The first air intake unit includes a first air intake pipe, a first air extraction pipe, and a first switching valve plate. The air intake of the first air extraction pipe and the air outlet of the first air intake pipe are arranged side by side. The first switching valve plate is rotatably arranged at the air intake of the first air extraction pipe and the air outlet of the first air intake pipe. The second air intake unit includes a second air intake pipe, a second air extraction pipe and a second switching valve plate, the air intake of the second air extraction pipe and the air outlet of the second air intake pipe are arranged side by side, and the second switching valve plate is rotatably arranged at the air intake of the second air extraction pipe and the air outlet of the second air intake pipe; The first air intake unit and the second air intake unit are alternately communicated with the air outlet end of the air intake assembly.

11. The air intake assembly according to claim 10, characterized in that When the first air intake unit is connected to the air outlet end of the air intake assembly, the first switching valve plate is in a position to block the air inlet of the first air extraction pipe; When the second air intake unit is connected to the air outlet end of the air intake assembly, the second switching valve plate is located at a position blocking the air inlet of the second air extraction pipe.

12. The air intake assembly according to claim 11, characterized in that When the first air intake unit is connected to the air outlet end of the air intake assembly, the second switching valve plate is in a rotating state; When the second air intake unit is connected to the air outlet end of the air intake assembly, the first switching valve plate is in a rotating state.

13. The air intake assembly according to claim 10, wherein: The air inlet of the first air extraction pipe and the air outlet of the first air inlet pipe are both semicircular in structure, and the two are assembled into a circular structure, and the first switching valve plate is semicircular in structure; And / or, the air inlet of the second air extraction pipe and the air outlet of the second air inlet pipe are both semicircular in structure, and the two are assembled into a circular structure, and the second switching valve plate is semicircular in structure.

14. The air intake assembly according to claim 10, wherein: The first air intake unit further includes a third control valve and a first pipe section, the first pipe section being opposite to the air inlet of the first air extraction pipe and the air outlet of the first air intake pipe, the third control valve being arranged in the first pipe section, and being in an open state when the first air intake unit is connected to the air outlet end of the air intake assembly; And / or, the second air intake unit also includes a fourth control valve and a second pipe section, the second pipe section is opposite to the air inlet of the second air extraction pipe and the air outlet of the second air intake pipe, the fourth control valve is arranged on the second pipe section, and when the second air intake unit is connected to the air outlet end of the air intake component, the fourth control valve is in an open state.

15. A semiconductor process chamber, characterized in that: It comprises a chamber body and an air intake assembly according to any one of claims 1 to 14, wherein the air outlet end of the air intake assembly is connected to the chamber body.

16. The semiconductor process chamber according to claim 15, wherein: The chamber body is provided with an exhaust port, and the semiconductor process chamber further comprises a pressure control valve, which is provided at the exhaust port to adjust the opening of the exhaust port.

17. The semiconductor process chamber according to claim 16, wherein: The pressure control valve includes at least two valve plates and a driving member. Each of the valve plates can be rotatably arranged at the exhaust port to open or close the exhaust port. The driving member is respectively connected to each of the valve plates. The driving member can drive each of the valve plates to rotate simultaneously to increase or decrease the opening of the exhaust port.

18. A semiconductor process method, applied to the air intake assembly according to any one of claims 1 to 9, characterized in that: The method comprises: In a first process step, the switching valve plate is controlled to move to a first position, so that the first gas enters the chamber body through the first gas inlet; In a second process step, the switching valve plate is controlled to move to a second position, so that the second gas enters the chamber body through the second gas inlet; The first process step and the second process step are performed alternately.

19. A semiconductor process method, applied to the air intake assembly according to any one of claims 10 to 14, characterized in that: The method comprises: In a first process step, the first air intake unit is controlled to communicate with the air outlet end of the air intake assembly, so that the first switching valve plate is in a position to block the air inlet of the first air extraction pipe, and the second switching valve plate is in a rotating state; The second process step is to control the second air intake unit to be connected to the air outlet end of the air intake assembly, so that the second switching valve plate is in a position to block the air inlet of the second air extraction pipe, and the first switching valve plate is in a rotating state.

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