Sputter deposition source, and methods of depositing a material on a substrate

Abstract

According to an embodiment, a sputter deposition source is described. The sputter deposition source includes a cathode drive unit configured to hold a sputter target, the cathode drive unit having a first drive configured to rotate the sputter target around a rotation axis along a length direction of the sputter target, a magnet assembly with one or more magnet segments, the magnet assembly being connected to a second drive for a first angular movement of the magnet assembly around the rotation axis, and an actuator assembly for at least locally displacing the magnet assembly in a radial direction and configured to adjust a distance between the magnet assembly and the sputter target.

Description

SPUTTER DEPOSITION SOURCE, AND METHODS OF DEPOSITING A MATERIAL ON A SUBSTRATEFIELD

[0001] Embodiments of the present disclosure relate to an apparatus and a method for layer deposition on a substrate, and particularly relate to layer deposition on a substrate from a sputter deposition source providing a moveable and adjustable magnet assembly.BACKGROUND

[0002] Several methods are known for depositing a material on a substrate. For instance, substrates can be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process, and the like. The process can be performed in an apparatus or processing chamber in which the substrate to be coated is located. A deposition material is provided in the apparatus. A plurality of materials such as metals, also including oxides, nitrides or carbides thereof, can be used for deposition on a substrate. Coated materials can be used in several applications and in several technical fields. For instance, substrates for displays can be coated by a physical vapor deposition (PVD) process such as a sputtering process, e.g., to form thin film transistors (TFTs) on the substrate.

[0003] With development of new display technologies and a tendency towards larger display sizes, there is an ongoing demand for layers or film used in displays that provide an improved performance, e.g., with respect to electrical characteristics and / or optical characteristics. For example, a uniformity of the deposited layers, such as a uniform thickness and a uniform material component distribution, is beneficial. This particularly applies to thin layers, which can, for example, be used to form thin film transistors (TFTs).

[0004] In view of the above, it is beneficial to deposit layers with improved uniformity and with improved control of a magnetron.

[0005] In view of the above, new apparatuses and methods for layer deposition on a substrate that overcome at least some of the problems in the art are beneficial. The present disclosure particularly aims at providing an apparatus and method that can improve and / or adjust characteristics of the deposited layer.SUMMARY

[0006] In light of the above, an apparatus and a method for layer deposition on a substrate are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.

[0007] According to an embodiment, a sputter deposition source is provided. The sputter deposition source includes a cathode drive unit configured to hold a sputter target, the cathode drive unit having a first drive configured to rotate the sputter target around a rotation axis along a length direction of the sputter target, a magnet assembly with one or more magnet segments, the magnet assembly being connected to a second drive for a first angular movement of the magnet assembly around the rotation axis, and an actuator assembly for at least locally displacing the magnet assembly in a radial direction and configured to adjust a distance between the magnet assembly and the sputter target.

[0008] According to an embodiment, a sputter deposition source is provided. The sputter deposition source includes a cathode drive unit configured to hold a sputter target, the cathode drive unit having a first drive configured to rotate the sputter target around a rotation axis along a length direction of the sputter target, a magnet assembly with a plurality of magnet segments having rigid magnets arranged along the length direction, and an actuator assembly for at least locally displacing the magnet assembly in a radial direction and configured to adjust a distance betweenthe magnet assembly and the sputter target, wherein gaps are provided between adjacent magnet segments of the plurality of magnet segments.

[0009] According to an embodiment, a method of depositing a material on a substrate is provided. The sputter deposition source includes sputtering the material from at least one sputter target held at a cathode drive unit, the cathode drive unit with the sputter target rotating around a rotation axis extending along a length direction angularly moving a magnet assembly that is arranged internally to the sputter target; and displacing the magnet assembly at two or more positions along the length direction in a radial direction with an actuator assembly for adjusting a distance between the magnet assembly and the sputter target.

[0010] According to an embodiment, a method of depositing a material on a substrate is provided. The sputter deposition source includes sputtering the material from at least one sputter target held at a cathode drive unit, the cathode drive unit with the sputter target rotating around a rotation axis extending along a length direction; displacing the magnet assembly with a plurality of magnet segments having rigid magnets arranged along the length direction at a first positions along the length direction in a radial direction with an actuator assembly for adjusting a first distance between the magnet assembly and the sputter target; and displacing the magnet assembly in a radial direction with an actuator assembly for adjusting a second distance between the magnet assembly and the sputter target.

[0011] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects can be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.BRIEF DESCRIPTION OF THE DRAWINGS

[0012] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, can be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:FIG. 1 A shows a schematic view of a sputter deposition source in its initial state of deposition according to embodiments described herein;FIG. 1 B shows a schematic view of a sputter deposition source in its latter state of deposition according to embodiments described herein;FIG. 2 shows a schematic view of a sputter deposition source according to further embodiments described herein;FIG. 3 shows a schematic view of an apparatus for layer deposition on a substrate according to embodiments disclosed herein;FIG. 4 shows a schematic view of a sputter deposition source according to yet further embodiments described herein;FIG. 5 shows a schematic view of a magnet assembly according to embodiments described herein;FIG. 6 shows a schematic view of a flexible hinge according to embodiments described herein;FIG. 7 shows a schematic view of an actuator assembly according to embodiments described herein;FIG. 8 shows a table illustrating a thickness uniformity tuning by magnetic field adaption according to embodiments described herein; andFIG. 9 shows a flow chart of a method for depositing material on a substrate according to embodiments described herein.DETAILED DESCRIPTION OF EMBODIMENTS

[0013] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0014] With the development of new display technologies and a tendency towards larger display sizes, there is an ongoing demand for layers or film used in displays that provide an improved performance, e.g., with respect to electrical characteristics and / or optical characteristics. For example, a uniformity of the deposited layers, such as a uniform thickness and a uniform material component distribution, is beneficial.

[0015] The present disclosure integrates a movable adjustable magnet assembly, which comprises a plurality of magnet segments, in a sputter deposition source. The sputter deposition source comprises a cathode drive unit which is configured to hold a sputter target. The cathode drive unit has a first drive which is configured to rotate the sputter target around a rotation axis along a length direction of the sputter target. A radial distance between the magnet assembly and a sputter target and / or incombination with an angle of the magnet assembly with respect to the substrate, is / are adjusted such that properties or characteristics of the deposited layer and / or characteristics of the layer deposition process can be adjusted. The sputter deposition source can be integrated in a deposition apparatus which is configured to deposit material on a substrate through sputtering. A substrate and / or a sputter target of the layer deposition apparatus performs an essentially continuous linear, reciprocal, and / or rotational movement.

[0016] The magnet assembly with the plurality of magnet segments is connected to a second drive for an angular movement of the magnet assembly around the rotation axis. The magnet assembly can be positioned within the sputter target.

[0017] Some embodiments described herein integrate an actuator assembly within the sputter deposition source. The actuator assembly can be positioned within the sputter target which is held by the configured cathode drive unit. The actuator assembly is configured to at least locally displace the magnet assembly in a radial direction for adjusting a distance between the magnet assembly and the sputter target. The actuator assembly is capable of adjusting the radial distance between the magnet assembly and the sputter target by displacing the magnet assembly towards and / or away from the sputter target. The actuator assembly is capable of adjusting the radial distance of the magnet assembly towards and / or away from the sputter target by locally displacing the magnet assembly which comprises the plurality of magnet segments. Particularly, magnet segments can be radially moved, particularly individually radially moved. The plurality of magnet segments can be connected to one another with a flexible hinge. For example, this local displacement permits for the magnet assembly to be locally displaced in one location towards the sputter target and also locally displaced in another location away from the sputter target and vice versa, or in the same direction.

[0018] The embodiments described herein can be utilized for evaporation on large area substrates, e.g., for display manufacturing. Specifically, the substrates or carriers, for which the structures and methods according to embodiments described herein are provided, are large area substrates. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to approximately 0.67 m2substrates(0.73x0.92m), GEN 5, which corresponds to approximately 1.4 m2substrates (1.1 m x 1 .3 m), GEN 7.5, which corresponds to approximately 4.29 m2substrates (1 .95 m x 2.2 m), GEN 8.5, which corresponds to approximately 5.7m2substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to approximately 8.7 m2substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. According to some embodiments, which can be combined with other embodiments described herein, a sputter deposition source according to embodiments described herein, may also be utilized for coating of a wafer for semiconductor manufacturing.

[0019] FIG. 1A shows an example of a schematic view of a sputter deposition source in its initial state of deposition, while FIG. 1 B shows a schematic view of a sputter deposition source in its latter state of deposition, according to embodiments described herein.

[0020] The sputter deposition source 100 comprises: a cathode drive unit 410 (seen in FIG. 4) configured to hold a sputter target 112, wherein AZ can be a thickness of the sputter target 112 and / or an erosion thereof, and wherein arrows 114 depict the movement of a first drive; a rotation axis 116; a magnet assembly 120, wherein arrows 122 depict the movement of a second drive; and an actuator assembly 130.

[0021] The magnet assembly 120 comprises a plurality of magnet segments 524 (seen in FIG. 5), for example, 3 or more magnet segments, or 4 or more magnet segments, or 5 or more magnet segments, or 10 or more magnet segments, or 20 or more magnet segments, or 50 or more magnet segments, or 100 or more magnet segments, or any plurality of magnet segments. One magnet segment is shown in the cross-sections in FIGS. 1A and 1 B. The plurality of the magnet segments 524 (seen in FIG. 5) can further comprise rigid magnets 126, e.g. rigid permanent magnets, arranged along a length direction fsof the sputter target 112 (seen in FIG. 4), for example, to achieve a predefined magnetic field.

[0022] According to some embodiments, which can be combined with other embodiments described herein, the sputter target 112 is held by the cathode driveunit 410 which is configured to hold a sputter target 112. The sputter target 112 can also be referred to as a cathode.

[0023] The sputter target 112 is connected to the cathode drive unit 410 (see FIG. 4). The cathode drive unit 410 has the first drive (illustrated in FIG. 1 as arrows 114 to depict the motion of the sputter target 112 which is provided by the first drive). The first drive of the cathode drive unit 410 is configured to rotate the sputter target 112 around the rotational axis 116 along a length direction fsof the sputter target 112 (seen in FIG. 4). The first drive provides the rotational movement to the sputter target 112 around the rotation axis 116. During rotation the sputter target 112 rotates in a uniform manner, for example, for uniform material utilization.

[0024] The second drive (illustrated in FIG. 1 with arrows 122 to depict the movement of the magnet assembly which is provided by the second drive) is connected to the magnet assembly 120. The second drive provides angular movement to the magnet assembly 120 around the rotation axis 116. For example, this angular movement can be in the form of reciprocal rotating (oscillating) movement between two points, wobbling, and / or split sputter mode (SSM). Optionally, the second drive can be configured to provide an angular movement of the actuator assembly 130.

[0025] In one state of the magnet assembly 120, the magnet assembly 120 can be parallel to the rotation axis 116 which is along a length direction fsof the sputter target 112. The magnet assembly 120 can extend along the rotation axis 116 or offset from the rotation axis. The second drive can, for example, provide angular movement with an amplitude range of 0° to ±80°, specifically in a range between 0° to ±45°, and more specifically in a range between 0° to ±20°. This angular movement can for example include reciprocal rotational movement with an amplitude of the exemplary ranges, or wobbling, or SSM, or any combination thereof in order to obtain, for example, uniform deposition. For example, the magnet assembly 120 can comprise reciprocal rotational movement as well as wobbling. In other words, as the magnet is travelling from +20° to -20° or vice versa or any other range, such as +30° to -30°, the magnet assembly 120 can also be simultaneously wobbling to provide a more uniform thickness or a predetermined material distribution.

[0026] The actuator assembly 130 is configured for at least locally displacing the magnet assembly 120 in a radial direction for adjusting the distance between the magnet assembly 120 and the sputter target 112. The distance which can be adjusted is the distance from the magnet assembly 120 to the inner surface of the sputter target 112. The distance from the magnet assembly 120 can be from a closest surface of the magnet assembly 120 or a furthest surface of a magnet assembly 120 or an intermediate surface of the magnet assembly 120. The inner surface of the sputter target 112 remains at the same position under normal operation, which is why it can be used as a reference point in terms of the radial distance between the magnet assembly 120 and the sputter target 112. The actuator assembly 130 can be within the cathode and / or sputter target 112. The actuator assembly 130 can displace the magnet assembly by up to 20 mm, e.g. by up to 7 mm or up to 5 mm. The actuator assembly 130 can displace the magnet assembly by in particular 10 mm or more, e.g. 15 mm or more, such as 20 mm.

[0027] FIG. 1 B illustrates an example of the sputter deposition source 100 as it is depleted due to sputtering of material from the sputter target 112. The magnet assembly 120 can be displaced according to a variety of conditions. For example, the magnet assembly 120 can be at least locally retracted or advanced by the actuator assembly 130. The purpose of displacing the magnet assembly 120 according to the state of the sputter deposition source 100 is, for example, to provide a predetermined magnetic field strength at the outer surface of the sputter target 112.

[0028] Displacing the magnet assembly 120, for example, according to the state of the sputter deposition source 100 is beneficial in that it allows the magnetic field strength at the outer surface of the sputter target 112 to be essentially constant, e.g. over time, or to tune the magnetic field strength, which would help result in a more uniform thickness of the sputtered material.

[0029] Having the magnet assembly 120 at a variable distance from the inner surface of the sputter target 112, according to embodiments of the present disclosure, allows to take into consideration the sputter target 112 being depleted. When the sputter target 112 is depleted, the distance between the magnet assembly120 and the outer surface of the sputter target 112 decreases, which would result in an increase in magnetic field strength at the outer surface of the sputter target. For example, if the magnetic field strength is to remain essentially constant, then the magnet assembly 120 can be displaced, for example, retracted, accordingly as the sputter target 112 is depleted.

[0030] Having a movable adjustable magnet assembly 120, which comprises the plurality of magnet segments 524, is further beneficial in that it is capable of achieving the results for sputtering in terms of layer characteristics. Being capable of angular movement while also being capable of radial movement has two degrees- of-freedom, which can be tuned. If, for example, a layer beneficially has a uniform thickness, the magnet assembly 120 would be displaced at a rate similar to that of the depletion of the sputter target 112. In other words, the distance between the magnet assembly 120 and the outer surface of the sputter target 112 remains effectively constant, which results in an essentially constant magnetic field strength at the outer surface of the sputter target 112.

[0031] The one or more layer characteristics can be selected from the group consisting of a layer thickness, a layer homogeneity, a layer structure, and any combination thereof. The one or more sputter characteristics can be selected from the group consisting of ion bombardment properties, target erosion, a substrate temperature, and any combination thereof.

[0032] An angularly movable and adjustable, particularly radially adjustable, magnet assembly 120 is beneficial in that it offers more versatile properties. The angularly movable and adjustable magnet assembly 120 offers more versatile properties since it is not fixed to the radial distance to the inner surface of the sputter target 112 or its angular position, as it is capable of angular movement within a predetermined range. The magnet assembly 120 being adjustable permits for the strength of the magnetic field at the outer surface of the sputter target 112 to be adjusted accordingly.

[0033] A rotatable cathode, particularly a rotatable cylindrical cathode having e.g. a target 112, and even more particularly a rotatable cathode in combination with amovable and adjustable magnet assembly 120, is beneficial in that it can be more evenly, and thus more efficiently, utilized. A more even utilization of the sputter target 112 improves the properties of the layer(s) of sputtered material, in particular for a uniform thickness and / or uniform material distribution. A more efficiently utilized sputter target 112 increases the usable lifetime of the sputter target 112 which consequently reduces the production downtime due to changeovers and adjustments.

[0034] The sputter target which is rotatable can have a target utilization of greater than 70%. The movable and adjustable magnet assembly 120 provides for advanced magnet motion for uniform layer coating. A further benefit of some of the embodiments described herein is that the rotatable sputter target 112 is selfcleaning with almost no redeposition.

[0035] FIG. 2 shows a schematic view of an example of a sputter deposition source 200, which can be combined with any of the other embodiments described herein.

[0036] A cathode drive unit 410 can be the connection interface between the sputter target 112 and a first drive 414 (seen in FIG. 4). The sputter target 112 is movable by the cathode drive unit 410. The cathode drive unit 410 can act as a structural component by holding various features within the sputter deposition source 200. For example, the sputter deposition source 200 can support the sputter target 112, the magnet assembly 120, the actuator assembly 130, etc..

[0037] A second drive 422 is connected to the magnet assembly 120 and can additionally be connected to the actuator assembly 130. For example, an assembly holder 250 can be provided and can support the magnet assembly 120 and the actuator assembly 130. Accordingly, the second drive can be, for example, connected to the assembly holder 250. The second drive 422 provides the angular movement to the magnet assembly and optionally to the actuator assembly. The angular movement of the second drive can be a reciprocal movement (also known as oscillation) between two points, wobbling, SSM, or any combination thereof. This angular movement takes place around the rotation axis 116 which extends alongthe length direction fsof the sputter target 112. The two points between which the angular movement is taking place can be defined in terms of angle or distance. The two points between which the angular movement is taking place can be equidistant (symmetrical) from a symmetric position, i.e. 0°, or non-equidistant (non- symmetrical). This angular movement provides the benefit of more even sputtering of the material onto the substrate, which would result in a more uniform layer with improved results regarding holes, levelness, consistency, etc.

[0038] According to some embodiments, e.g. in a static deposition apparatus, the orbit velocity of the magnet assembly depends on the deposition time and on the sputter mode. For example, in a wobbling mode, the magnets wobble during plasma on. The magnet motion can be correlated to the sputter time such that multiple integer of half oscillations fit into the process time. The magnets may move from - 20° to +20° in a plasma-on time, which may for example be 15 s to 30 s, such as 20 s. For example, in a split-sputter mode (SSM), the magnet position may be fixed while the plasma is on. The plasma turns off and the magnet moves to another fixed position. Thereafter, the plasma turns on again. According to some embodiments, which can be combined with other embodiments described herein, a displacement in the radial direction may also be correlated with the magnet oscillation (wobbling) or the magnet position (SSM). It is to be understood that in a deposition apparatus to deposit material on a substrate, such as a large area substrate for display manufacturing, the substrate can be continuously moved during deposition past at least one deposition source having rotatable cathodes (“dynamic coating”). Alternatively, the substrate may rest essentially at a constant position during coating (“static coating”). An essentially constant position includes a substrate sweeping (e.g. back and forth) or substrate wobbling, wherein, for example, and average position can be can be constant.

[0039] According to some embodiments, in addition to a first drive to rotate the sputter target, a second drive for an angular movement of the magnet assembly and an actuator assembly for radial movement of one or more magnet segments are provided. In particularly, the second drive provides also an angular movement of the actuator assembly. The magnet assembly or portions of the magnet assembly canbe moved in both coordinates of a polar coordinate system. According to some embodiments, which can be combined with other embodiments described herein, the magnet assembly or one or more magnet segments thereof may be displaced in radial direction as a function of the angular position of the magnet assembly or one or more a magnet segments thereof.

[0040] According to some embodiments, which can be combined with other embodiments described herein, the second drive 422 can be further configured to provide an angular movement to the actuator assembly 130. The actuator assembly 130 can have an angular movement around the rotation axis 116 along a length direction fsof the sputter target 112. Angular movement of the actuator assembly 130 is beneficial in that it allows for the magnet assembly 120 to be locally adjusted while in operation, because the magnet assembly 120 and the actuator assembly 130 can have a simultaneous relative movement. The actuator assembly 130 moving along with the magnet assembly 120 means that the contact point(s), particularly local contact points, between the magnet assembly 120 and the actuator assembly 130 can be consistent. The magnet assembly 120 can be adjusted by the actuator assembly before or after operation, wherein the operation is preferably deposition. According to some embodiments, which can be combined with other embodiments described herein, a displacement in the radial direction, i.e. a radial magnet movement, can be provided during a plasma-on time. This may be provided e.g. for an in-line deposition system e.g. a dynamic sputtering apparatus.

[0041] According to an embodiment, a sputter deposition source is provided. The sputter deposition source includes a cathode drive unit configured to hold a sputter target, the cathode drive unit having a first drive configured to rotate the sputter target around a rotation axis along a length direction of the sputter target. The sputter deposition source further includes a magnet assembly with a plurality of magnet segments, and an actuator assembly for at least locally displacing the magnet assembly in a radial direction and configured to adjust a distance between the magnet assembly and the sputter target. The plurality of magnet segments comprises rigid magnets arranged along the length direction, wherein gaps are provided between adjacent magnet segments of the plurality of magnet segments.For example, two adjacent magnet segments of the plurality of magnet segments can be connected by a flexible hinge. Accordingly, an adjustment of the magnetic field strength can be provided locally along the length direction, particularly with rigid permanent magnets. The magnet assembly or portions of the magnet assembly can be moved to different radial coordinates of a polar coordinate system, i.e. polar coordinates of magnet segments may differ at three or more positions along the length direction, particularly with one or more extrema of the radial distance (first derivative of the radial distance along the length direction is equal to 0) being between the ends of the magnet assembly, e.g. in the middle or another position distant from the ends. The magnet assembly can have one or more bows. The gaps and particularly the size of the gaps may allow for the one or more bows.

[0042] FIG. 2 shows a cross-section at one position along the length direction. According to some embodiments, which can be combined with other embodiments described herein, the presence of a base plate 252 can be related to the assembly holder 250 or the actuator assembly 130 or the magnet assembly 120. In the illustrated embodiment, the base plate 252, for example, is configured to be connected to the assembly holder 250, and specifically to be fastened together.

[0043] According to some embodiments, which can be combined with other embodiments described herein, a cooling channel 256 is a channel through which cooling medium can be guided through or travel through, to provide a cooling to the magnet assembly 120. This cooling channel can house any cooling medium such as water, which can be used to dissipate the heat from the magnet-sensitive components, particularly the magnet assembly 120, more particularly the magnet segments, and even more particularly from the rigid permanent magnets of the plurality of magnet segments. The cooling channel 256 can guide the cooling fluid from one side of the cathode or target to an opposite, second side of the cathode or target in a first path, while the cooling fluid can be guided between a target or backing tube and the assembly holder or the magnet assembly on a second path from the second side to the first side. In other words, the cooling channel 256 can close a loop for the cooling fluid. This cooling channel is beneficial as it provides cooling of the magnet assembly 120, allowing the magnet assembly 120 to remainwithin its operating temperature range. A rotary target can provide high cooling efficiency, e.g., for a high deposition rate, when a cooling channel is present.

[0044] FIG. 3 shows a schematic view of an example of a deposition apparatus, specifically an in-line deposition apparatus 300, for layer deposition on a substrate according to embodiments disclosed herein.

[0045] The example of the in-line deposition apparatus 300 includes a vacuum chamber 302 having a processing zone for processing a substrate 10. The substrate 10 is moved into the processing zone, having an array of one or more sputter targets 112, which is capable of rotating. Each of the one or more sputter targets 112 provides a respective plasma zone 2 in which a deposition material is supplied during operation of the one or more sputter targets 112. The deposition apparatus 300 further comprises one or more power supplies, e.g. at least a DC power supply 370 and a controller 372. The controller 372 can be, for example, configured to control the movement of the magnet assembly 120 of each of the sputter deposition sources 100 around the respective rotation axis 116, e.g. before and / or during the layer deposition process. The vacuum chamber 302 can also be referred to as “processing chamber”.

[0046] Exemplarily, one vacuum chamber 302 for the deposition of layers therein is shown. A further vacuum chamber or plurality of vacuum chambers 304 can be provided adjacent to the vacuum chamber 302. The atmosphere in the vacuum chamber 302, such as a process atmosphere for a reactive sputtering process, can be controlled by generating a technical vacuum. For example, a technical vacuum can be generated by vacuum pumps connected to the vacuum chamber 302, and / or by inserting one or more process gases into the processing zone in the vacuum chamber 302. The one or more process gases can include gases for creating a process atmosphere for a reactive sputtering process. Within the vacuum chamber 302, a drive arrangement (not illustrated) can be provided in order to transport a carrier 20, having the substrate 10 thereon, into and out of the vacuum chamber 302.

[0047] According to some embodiments, which can be combined with other embodiments described herein, the one or more sputter targets 112 and one or more anodes 306 can be electrically connected to any of the DC power supply 370 and a bipolar power supply (not illustrated). In the case of bipolar sputtering the anodes 306 can be omitted. Sputtering for forming the layer on the substrate 10 can be conducted as DC sputtering. The one or more sputter targets 112 can be connected to the DC power supply 370, e.g. together with the corresponding anodes 306, for collecting electrons during sputtering. According to yet further embodiments, which can be combined with other embodiments described herein, at least one of the one or more sputter targets 112 can have a corresponding individual DC power supply, particularly wherein the individual DC power supply is controlled by the controller 372.

[0048] FIG. 3 shows a plurality of sputter targets. Particularly for applications for large area deposition, an array of sputter deposition sources 100 can be provided within the vacuum chamber 302. In some examples, two or more sputter deposition sources 100 are provided. For example, 4, 5, 6, 12 or even more sputter deposition sources 100 can be provided.

[0049] FIG. 3 shows an example of an arrangement of sputter deposition sources 100 according to embodiments described herein. The arrangement can be employed in the in-line deposition apparatus 300 described with respect to FIG. 3.

[0050] According to some embodiments, which can be combined with other embodiments described herein, a first angle a between a start of movement range 317 and a symmetric position 318 with respect to the rotational axis 116 of the sputter deposition source 100 is in the range between -90° to 0°. A second angle [3 between the symmetric position 318 and an end of movement range 319 with respect to the rotational axis 116 of the sputter deposition source 100 can be in the range between 0° to 90°. As an example, at least one of the first angle a and the second angle [3 is about 10 degrees or less (“narrow angle”) or about 45 degrees (“wide angle”). In some implementations, the first angle and the second angle can be substantially the same or can be different. The movement between the start and end of the movement range, also referred to as positions, is in angular form, suchas reciprocal rotating (oscillating) movement between two points, wobbling, SSM, or a combination thereof.

[0051] The term “reciprocal rotating movement” can be understood as a repetitive variation, of a rotational position of the magnet assembly 120 between the two rotational positions, such as between the start of movement range 317 and the end of movement range 319. The term “reciprocal rotating movement” can also be understood as a repetitive variation of a rotational position of the magnet assembly 120 about the symmetric position 318. The term “reciprocal rotating movement” as used throughout the present disclosure can also be referred to as “wobbling” or “split sputter mode”.

[0052] In some embodiments, the reciprocal rotating movement of each magnet assembly 120 and actuator assembly 130 can have a frequency of at least 1 / 60 Hz, specifically at least 1 / 10 Hz, and more specifically at least 1 Hz. It can also be that only the magnet assembly 120 has reciprocal rotating movement. In some implementations, the reciprocal rotating movement of each magnet assembly 120 and actuator assembly 130 has a frequency of less than 5 Hz. As an example, the reciprocal rotating movement of each magnet assembly 120 and actuator assembly 130 has a corresponding frequency. The frequencies can be substantially the same or can be different, or a combination thereof.

[0053] During the reciprocal rotating movement, the plasma zone 2 of each sputter deposition source 100 can move or sweep in an oscillating motion over the processing zone in which the substrate 10 is located. For example, a deposition material is deposited on the substrate 10 during the reciprocal rotating motion of each sputter deposition source 100.

[0054] According to some embodiments, which can be combined with other embodiments described herein, the at least one sputter deposition source 100 is two or more sputter deposition sources 100. The controller 372 can be configured to adjust the angles of the at least one magnet assembly 120, of at least one sputter deposition source 100 of the two or more sputter deposition sources 100, to be different. The arrangement is optionally not symmetric and / or not balanced. Forexample, the two or more sputter deposition sources 100 can include one or more first sputter deposition sources 100 each with the corresponding magnet assembly 120 having essentially the same angle, e.g., a first angle a, with respect to the symmetric position 318. The two or more sputter deposition sources 100 can include one or more second sputter deposition sources 100 each with the corresponding magnet assembly 120 having essentially the same angle, e.g., a second angle (3, with respect to the symmetric position 318. The first angle a and the second angle [3 can be different. The first angle a and the second angle p can be the same, resulting in a symmetrical arrangement.

[0055] The controller 372 can be utilized to control the rotation of the at least one sputter target 112, the angular movement of the at least one magnet assembly 120, and particularly the angular movement of the at least one actuator assembly 130. The controller 372 can further be utilized to control the positioning of the at least one magnet assembly 120 by at least controlling the local displacement of the corresponding magnet assembly 120. The controller 372 can further control the supply of DC power and any further properties which can be controlled by a controller, such as for example, the rate of deposition. The controller may also control transportation along a transport direction 1 .

[0056] The one or more process control parameters can be selected from the group consisting of a sputter power, a process pressure, a partial pressure of reactive gases, and any combination thereof. For example, the one or more process control parameters can be varied as a function of the magnet angle to optimize layer properties.

[0057] The sputter target 112 can be of a metal (for example, for a source / drain, gate, and others) material selected from the group consisting of: copper, aluminum, molybdenum, niobium, titanium, silver, copper silver, and alloys. The sputter target 112 can be of a transparent conductive material selected from the group of: lnSnOx(ITO), InZnOx (IZO), and a combination thereof (for example, for a transparent conductive electrode). The sputter target 112 can be of a material (for example, for TFT channels) selected from the group of: lnGaZnOx(IGZO), and others. In some embodiments the material of the sputter target 112 is present in a solid phase.According to some embodiments, for MOx applications, any mixture of the oxides from the following metals: In, Ga, Zn, and Sn, and optionally with one or more additional dopants can be provided as target material. For oxide deposition, the target can comprise a ceramic material or may comprise a metal material for sputtering in an oxygen-containing processing environment for the oxide deposition.

[0058] By bombarding the sputter target 112 with energetic particles, atoms of the target material, for example, the deposition material, are ejected from the sputter target 112 and are supplied into the plasma zone 2. In a reactive sputtering process, one or more process gases can be supplied to the plasma zone 2, for example, at least one of oxygen and nitrogen. Reactive sputtering processes are deposition processes during which a material is sputtered under a process atmosphere. For example, the process atmosphere can include the one or more process gases such as at least one of oxygen and nitrogen, in order to deposit a material or layer containing an oxide or nitride of the deposition material.

[0059] According to some embodiments, which can be combined with other embodiments described herein, the sputter deposition source 100 can be integrated into the deposition apparatus 300 for sputter deposition for display applications. The sputter deposition source 100 and / or the deposition apparatus 300 can sputter onto thin glass substrates, particularly with a size of at least 1 m2. For example, the sputter target 112 can be a length of 0.5 m or above, such as 1 m, 2 m, 2.5 m, or 3 m. Optionally, the sputter target 112 can be a length of up to 3.5 m or even up to 4 m, up to 5 m or even up to 6 m.

[0060] According to some embodiments, as exemplarily shown in FIG: 4, which can be combined with other embodiments described herein, the plasma zone 2 comprises plasma of any sort suitable for sputter deposition and particularly for a form of physical vapor deposition (PVD). The plasma zone 2 can be within a region near and / or adjacent to a sputter target 412. A cathode drive unit 410 is configured to hold the sputter target 412, which rotates around a rotation axis 416. The rotation axis 416 extends along a length direction fsof the sputter target 412, which is optionally central to the sputter target 412. The cathode drive unit 410 comprises a first drive 414, which causes the sputter target 412 to rotate around the rotation axis416. The direction and speed of the rotational movement can be adjusted by controlling the first drive 414.

[0061] The assembly holder 450 can house a magnet assembly 420 as well as an actuator assembly 430. The magnet assembly comprises a plurality of magnet segments 424, wherein the plurality of magnet segments 424 optionally comprise rigid magnets 126, e.g. rigid permanent magnets, (not illustrated in FIG. 4). The plurality of magnet segments 424 can be connected to one another by one or more flexible hinges 440. A second drive 422 can be connected to the magnet assembly 420, and, optionally, the second drive 422 can be connected to the actuator assembly 430. For example, the second drive 422 can be connected to an assembly holder 450 within which can be disposed the magnet assembly 420 and the actuator assembly 430. In some embodiments, the second drive 422 provides an angular movement in the form of reciprocal rotating movement, wobbling, SSM, or any combination thereof.

[0062] According to some embodiments, which can be combined with other embodiments described herein, the plasma zone 2 can be moved angularly around a rotational axis, such as the rotational axis 416, by the angular movement of the magnet assembly 420. In particular, the angular movement of the magnet assembly 420 provides the angular movement of the plasma zone 2 around the rotational axis 416. The direction and speed of the angular movement of the plasma zone 2 can be adjusted by controlling the second drive 422.

[0063] According to some embodiments, which can be combined with other embodiments described herein, the assembly holder 450 can be positioned on a base plate 452, particularly on top of the base plate 452. The assembly holder 450 and the base plate 452 can be fastened together by for example, screws 454, clamps, or adhesive. The base plate 452 can be structural support to any of the magnet assembly 420, actuator assembly 430, and / or assembly holder 450. A cooling channel 456 can be a channel through which cooling medium can be guided or travel through, to provide cooling to the magnet assembly 420. The cooling channel 456 can consist of any cooling medium such as water, which is used to dissipate heat from the magnet-sensitive component or components. The magnet-sensitive component is particularly the magnet assembly 420, more particularly the magnet segments 424, and even more particularly the rigid permanent magnets of the plurality of magnet segments 424. The cooling channel 456 is beneficial as it provides cooling of the magnet assembly 420, allowing the magnet assembly to remain within its operating temperature range. As a further example, the base plate 452 can be connected to the second drive 422, and can be provided with angular movement by the second drive 422 in the form of reciprocal rotating movement, wobbling, SSM, or any combination thereof.

[0064] The magnet assembly 420 is at least locally displaced according to a movement of the actuator assembly 430, particularly in a radial direction. The magnet assembly 420 is displaced, in this specific example retracted, by the actuator assembly 430, which has a retractable distance range r. The retractable distance range r is optionally a distance that is larger than or equal to the thickness of the sputter target 412. The radial displacement can be performed to increase or decrease the distance between the magnet assembly 420 and the inner surface of the sputter target 412, which consequently adjusts the distance between the magnet assembly 420 and the outer surface of the sputter target 412. The purpose of displacing the magnet assembly 420 according to the state of the sputter deposition source 400 is to provide a determined magnetic field strength at the outer surface of the sputter target 412. Consistently displacing the magnet assembly 420 according to the state of the sputter deposition source 400 is beneficial in that it can allow the magnetic field strength at the outer surface of the sputter target 412 to be essentially constant, which would help result in a more uniform thickness of the sputtered material. For example, the magnet assembly 420 can be adjusted by the actuator assembly 430 according to a thickness of the sputter target 412.

[0065] The movable adjustable magnet assembly 420, which comprises the plurality of magnet segments 424, is further beneficial in that it is capable of achieving the results for sputtering in terms of layer characteristics. Being capable of angular movement while also being capable of radial movement constitutes two degrees-of-freedom, which can be tuned. For example, if a layer is to have uniform thickness, the magnet assembly 420 would be displaced upon depletion of thesputter target 412. In a rough estimation a displacement rate may be similar to a depletion rate such that the distance between the magnet assembly 420 and the outer surface of the sputter target 412 remaining effectively constant, which may result an estimated constant magnetic field strength at the outer surface of the sputter target 412. According to some embodiments, which can be combined with other embodiments, not only the entire magnet can move by a distance corresponding to a target depletion, but also the relative distance of the individual magnet segments may vary. The magnetic field (B field) on the target surface may usually be varied across the target to achieve a uniform coating layer.

[0066] The actuator assembly 430 can comprise a plurality of actuators 432. Each of the plurality of actuators 432 can act on a single magnet segment of the plurality of magnet segments 424. The actuation locally displaces the magnet assembly 420 to a position, and can be dynamically adjusted / varied during the deposition.

[0067] A controller 472 can be utilized to control the rotation of the sputter target 412, the angular movement of the magnet assembly 420, particularly the angular movement of the actuator assembly 430, or any combination thereof. The controller 472 can further be utilized to control the positioning of the magnet assembly 420 by at least controlling the local displacement of the magnet assembly 420 by the actuator assembly 130, particularly by at least one of the plurality of actuators 432. The one or more process control parameters can be selected from the group consisting of: one or more local magnetic field strengths, a sputter power, target voltage, target current, a process pressure, a partial pressure of reactive gases, and any combination thereof. For example, the one or more process control parameters can be varied as a function of the magnet angle to optimize layer properties.

[0068] According to some embodiments, which can be combined with other embodiments described herein, the controller 472 can be configured to at least locally retract or advance the magnet assembly 420 at different positions (e.g. individually) in the length direction fsof the sputter target 412 to provide a predetermined local magnetic field strength during sputtering at an outer surface of the sputter target 412, in particular when an erosion depth of the sputter target 412 is position-dependent.

[0069] FIG. 5 shows a schematic view of an example of a magnet assembly 520 along with an actuator assembly 530 according to embodiments described herein.

[0070] According to some embodiments, magnet segments of a plurality of magnet segments 524 can be connected to one another by a flexible hinge 540, particularly by a plurality of flexible hinges 540. For example, two adjacent magnet segments 524 are connected with one flexible hinge 540. Gaps 528 can be provided between adjacent magnet segments of the plurality of magnet segments 524, such that the magnet segments are capable of being locally displaced. Optionally, the gaps 528 can be from 0.01 mm to 1 mm. Preferably, the gaps can be from 0.2 mm (or 0.3 mm) to 0.5mm (or 0.4 mm), particularly to allow for a predetermined inclination while avoiding or reducing a distortion of the magnet field of the magnet assembly. According to some embodiments, the gaps may be equal or may vary.

[0071] The magnet segments 524 are preferably rigid magnet segments comprising rigid permanent magnets. A single actuator of any of the actuators comprising the actuator assembly 530 can act on a single magnet segment 524. The magnet assembly 520 is capable of being locally displaced in a radial direction. For example, if an actuator of the actuator assembly 530 is fully extended prior to the beginning of deposition, then the actuator of the actuator assembly 530 can be retracted to locally displace the magnet assembly 524. Displacing a single magnet segment of the plurality of magnet segments 524 can consequently also cause at least one further magnet segment to be displaced, as the plurality magnet segments 524 can be connected to one another through a plurality of flexible hinges 540 in the illustrated embodiment. For example, an actuator of the actuator assembly 530 can have a displacement effect on 2, 3, or 5, or 8, or more magnet segments. The plurality of magnet segments 524 can consist of any of: 3 or more magnet segments, 4 or more magnet segments, 5 or more magnet segments, 10 or more magnet segments, 20 or more magnet segments, 50 or more magnet segments, 100 or more magnet segments, or any plurality of magnet segments. Optionally, each of the magnet segments can be of the same size, varied size, or any combination thereof. This plurality of magnet segments extends along the length direction fsof the sputter target 412 for a length fmof the magnet assembly 420.

[0072] The configuration of the plurality of magnet segments 524 and of the plurality of actuators of the actuator assembly can be configured in any configurable manner according to the embodiments described herein. The plurality of magnet segments can be configured for the layer deposition to result in one or more predetermined layer characteristics. For example, all of the magnet segments of the plurality of magnet segments 524 could have an actuator of the actuator assembly 530 acting on the magnet segments. For example, some of the magnet segments of the plurality of magnet segments 524 could have an actuator of the actuator assembly 530 acting on the magnet segments; optionally, the magnet segments can be equally or differently spaced apart.

[0073] According to one embodiment, the magnet assembly 120 can be configured to have 15 magnet segments 524 that are connected to one another using flexible hinges 540, wherein there are gaps 528 of 0.35 mm between adjacent magnet segments 524. Optionally, the first 4 gaps and the last 4 gaps can be 0.4 mm and the 5 gaps in the middle are 0.3 mm.

[0074] For example, the magnet assembly 520 can be a length of any value between: 10 mm to 3000 mm; 100 mm to 1200 mm; or 150 mm to 800 mm. The magnet assembly 520 can be at least locally displaced by a distance of any of at least: 0.1 mm, 0.5 mm, 1 mm, 2 mm, 5 mm, 10 mm 15 mm, or 20 mm.

[0075] According to some embodiments, which can be combined with other embodiments described herein, the actuator assembly 530 can comprise a plurality of actuators having a first actuator 534, a second actuator 536, and one or more third actuators 538, wherein each of the plurality of actuators is coupled to a corresponding magnet segment of the plurality of magnet segments 524. For example, each of the plurality of actuators is configured to locally adjust, along the length direction fmof the magnet assembly 420, a radial position of the magnet segment at the actuator position. Optionally, the actuator assembly 530 can be configured to individually adjust the radial position of each magnet segment of the plurality of magnet segments 524, particularly wherein the radial position of each of the plurality of magnet segments 524 is individually controllable.

[0076] Embodiments of the present disclosure reduce or avoid manual adjustments to the hardware in order to obtain improved uniformity of the deposited layers. For example, disassembly of the apparatuses to perform the manual adjustments, fixed location of the magnet, only longitudinal movement of the magnet, etc. can be reduced or avoided. As a further example, the adjustments can be performed and controlled automatically or through automation, particularly by a controller.

[0077] FIG. 6 shows a schematic view of an example of a flexible hinge 640 according to embodiments described herein.

[0078] The magnet segment of the plurality of magnet segments 524 shown is a part of the magnet assembly 120, and each of the magnet segments of the plurality of magnet segments 524 preferably comprises rigid magnets 126 arranged along the length direction fmof the magnet assembly 420. The illustrated example of the magnet segment of the plurality of magnet segments 524 can be connected to another magnet segment of the plurality of magnet segments 524 by the flexible hinge 640. The flexible hinge 640 can comprise a flexible metal strip 642. Screws 644 can be utilized to fasten the flexible metal strip 642 to the magnet segments of the plurality of magnet segments 524. The flexible metal strip 642 can be made of a material selected from the group of: aluminum, brass, copper, or a combination thereof. The flexible metal strip 642 can be of any metal material which has the elastic properties for the predetermined bending. The flexible metal strip enables a backlash-free and therefore torsion-free connection, which is laterally rigid and movable in a vertical direction, thus allowing angular movement.

[0079] The flexible metal strip 642 of the flexible hinge 640 can be secured to one or both adjacent magnet segments of the plurality of magnet segments 524. Screws 644, pins, nails, welding, gluing, or a combination thereof, can be utilized to securely fasten the flexible metal strip 642 to the magnet segments of the plurality of magnet segments 524. Screws provide the benefit of being reusable.

[0080] FIG. 7 shows a schematic view of an example of an actuator of an actuator assembly 530 according to embodiments described herein.

[0081] An actuator assembly 530 can comprise a plurality of actuators. A connector assembly is where a corresponding magnet segment 524 of the plurality of magnet segments can be located. A positioning motor 732, which can also be a “stepper motor”, can be connected to the corresponding magnet segment with a connector 734. Each of the plurality of actuators can comprise one or more of the following: the positioning motor 732, a spindle, such as a threaded spindle 736, and a linear guide 739. The positioning motor 732 provides the movement to the threaded spindle 736, which would in turn provide a force to the magnet segment to be moved away from or towards the positioning motor 732. The positioning motor 732 of each of the actuators of the plurality of actuators of the actuator assembly 130 can have a displacement range in a radial direction of 4 mm or more, particularly at least 15 mm. Optionally, the radial distance can be adjusted automatically / through automation.

[0082] The positioning motor 732 is preferably in the form of a stepper motor due to its cost efficiency and its suitability for vacuum applications, as a stepper motor offers low speed, low dynamics, and high resolution.

[0083] A spring fixing 738 coupled to the connector can be utilized to restrict the magnet segment from being displaced along one or more directions or rotation axes, particularly while providing flexibility along one or more other directions or rotation axes. The spring fixing 738 can be utilized to keep the magnet segment, and consequently the magnet assembly 120, oriented along the length fmwhile allowing individual displacement of magnet segments. The linear guide 739 can be utilized to permit radial movement. A position sensor 737 can be utilized as a feedback for a controller which can be used to operate the positioning motor 732, which operates the actuator of the actuator assembly 130. The position sensor 737 can provide feedback regarding the position of the magnet segment or any other position of any of the features of the embodiments described herein, which can be fed to a controller, particularly after power-off states. The controller then processes the data through a feedback loop to operate the positioning motor 732 of the actuator assembly 130.

[0084] FIG. 8 shows a graph illustrating an example of the thickness uniformity tuning corresponding to magnetic field adaption according to embodiments described herein. The example of the graph illustrates an example result of thickness uniformity before and after tuning of the magnet assembly 120. Prior to tuning of the magnet assembly, the thickness of the layer has two enlarged peaks on either end of the Y-axis and a lower center (see curve 802). After tuning of the magnet assembly 120 according to the embodiments described herein, the thickness is significantly more uniform than prior to tuning of the magnet assembly 120 (see curve 804).

[0085] The tuning of the magnet assembly 120 can be carried out by the actuator assembly 130 which can be controlled by the controller 472. The controller 472 can take input from the position sensor 737 or other input such as time, thickness of the sputter target 112, or other parameters such as the positioning of the actuators of the actuator assembly 130 along the length direction fsof the sputter target 112, distribution of one or more layer properties, such as layer thickness, opto-electronic properties, e.g. refractive index and resistance. The actuators can be individually tuned / adjusted, and the actuators can optionally be tuned / adjusted segmentally, and not all simultaneously.

[0086] For example, the controller 472 can be used to control the rotation of the sputter target 112 by altering its speed, direction, or any combination thereof, in order to improve the properties of the deposited layer. The controller 472 can be used to control the magnet assembly 120, preferably to control at least locally the displacement of the magnet assembly 120. According to some embodiments, the controller 472 can be used to control the speed, direction, type of angular movement, or any combination thereof of the magnet assembly 120. The controller 472 can be used to control the speed, direction, type of angular movement, or any combination thereof of the actuator assembly 130. The controller 472 can be used to control the speed, direction, type of angular movement, or any combination thereof of the assembly holder 450. The controller 472 can be used to control the speed, direction, type of angular movement, or any combination thereof of the base plate 452.

[0087] Numerous types of controllers can be implemented in the embodiments described herein. One or more controllers may control the process control parameters. The one or more process control parameters can be selected from the group consisting of: one or more local magnetic field strengths of the magnet assembly, a sputter power, a target voltage, a target current, a process pressure, a partial pressure of reactive gases, and any combination thereof. The one or more process control parameters can be varied as a positive or negative feedback loop control system which can be computed by a computing device.

[0088] A bus-bar can be utilized to distribute power provided to the actuators of the actuator assembly accordingly throughout the sputter deposition source 100, and particularly the deposition apparatus 300.

[0089] According to some embodiments, which can be combined with other embodiments described herein, a magnetron sputter cathode for sputter deposition is described. The magnetron sputter cathode comprises: a cathode drive unit 410 configured to hold a sputter target 112, the cathode drive unit 410 having a first drive configured to rotate the sputter target around a rotation axis 116 along a length direction fsof the sputter target 112; a magnet assembly 120 with a plurality of magnet segments wherein gaps 528 are provided between adjacent magnet segments 524 comprising rigid magnets 126, e.g. rigid permanent magnets, arranged along the length direction fs; and an actuator assembly 130 for at least locally displacing the magnet assembly 120 in a radial direction for adjusting a distance between the magnet assembly 120 and the sputter target 112, particularly the inner surface of the sputter target 112.

[0090] FIG. 9 shows a flow chart of a method for depositing material on a substrate according to embodiments described herein. The method 900 can be implemented using the sputter deposition source according to the embodiments described herein.

[0091] The method 900 comprises: block 910, in which a material is sputtered, from at least one sputter target 112 which is held at a cathode drive unit 410, wherein the cathode drive unit 410 with the sputter target 112 rotates around a rotation axis 116 which extends along a length direction, particularly a length direction of thesputter target fs; block 920, in which a magnet assembly 120 which is arranged within the cathode drive unit 410 and / or internally to the sputter target 112 is angularly moved; and block 930, in which the magnet assembly 120 is displaced at two or more positions along the length, particularly the length of the sputter target ts, in a radial direction by an actuator assembly 130, particularly for adjusting a distance between the magnet assembly and the sputter target.

[0092] According to some embodiments, which can be combined with other embodiments described herein, the sputter target 112 can be rotated around the rotation axis 116 in a clockwise or counterclockwise direction. Rotation of the sputter target 112 can be at a predetermined or variable, static or dynamic speed to cause the sputtering of the material from the sputter target 112, and particularly from the outer surface of the sputter target 112.

[0093] According to other embodiments, a method of depositing a material on a substrate, includes sputtering the material from at least one sputter target held at a cathode drive unit, the cathode drive unit with the sputter target rotating around a rotation axis extending along a length direction; displacing the magnet assembly with a plurality of magnet segments having rigid magnets arranged along the length direction at a first positions along the length direction in a radial direction with an actuator assembly for adjusting a first distance between the magnet assembly and the sputter target; and displacing the magnet assembly in a radial direction with an actuator assembly for adjusting a second distance between the magnet assembly and the sputter target.

[0094] Embodiments of the present disclosure may include a controller that includes a central processing unit (CPU), a memory and, for example, support circuits. To facilitate control of the sputter deposition source, the CPU may be one of any form of general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory is coupled to the CPU. The memory, or a computer readable medium, may be one or more readily available memory devices such as random access memory, read only memory, hard disk, or any other form of digital storage either local or remote. The support circuits may be coupled to the CPU for supporting the processor in aconventional manner. These circuits include cache, power supplies, clock circuits, input / output circuitry, related subsystems, and the like. Operating or deposition instructions are generally stored in the memory as a software routine typically known as a recipe. The software routine may also be stored and / or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU. The software routine, when executed by CPU, transforms the general purpose computer into a specific purpose computer (controller) that controls the apparatus operation such as that for the first drive and the second drive an / or the actuator assembly. Although the method and / or process of the present disclosure is discussed as being implemented as a software routine, some of the method steps that are disclosed therein may be performed in hardware as well as by the software controller. As such, embodiments of the invention may be implemented in software as executed upon a computer system, and hardware as an application specific integrated circuit or other type of hardware implementation, or a combination of software and hardware.

[0095] The controller may execute or perform a method of depositing a material on a substrate as described herein. According to an embodiment, sputter deposition source for the methods described herein is provided. The sputter deposition source or a deposition apparatus including the sputter deposition source may include the controller. The controller includes a processor and memory storing instructions (or a program) that, when executed by the processor, cause the apparatus to perform a method according to embodiments of the present disclosure.

[0096] According to some embodiments, which can be combined with other embodiments described herein, the magnet assembly 120 can comprise a plurality of magnet segments which are connected to one another through a flexible hinge 640. The magnet assembly 120 can be locally displaced by displacing at least two or more magnet segments of the plurality of magnet segments 524, particularly by individually displacing at least two magnet segments of the plurality of magnet segments 524. Each of the magnet segments of the plurality of magnet segments 524 can comprise rigid magnets 126, e.g. rigid permanent magnets, which are arranged in a length direction ts, particularly along the length tm. The magnetassembly can be locally displaced in the radial direction by up 25 mm, by up to 20 mm, or up to 15 mm, particularly 12 mm.

[0097] The actuator assembly 130 can comprise a plurality of actuators having a first actuator 534, a second actuator 536, and one or more third actuators 538. Each of the plurality of actuators can be coupled to a corresponding magnet segment of the plurality of magnet segments 524 according to some embodiments described herein. Each of the plurality of actuators can be configured to locally adjust a radial position of the magnet segment at the actuator position along the length direction ts, particularly wherein the radial position of each of the plurality of magnet segments 524 is individually controllable by a controller 472.

[0098] Each actuator of the actuator assembly 130 can comprise a positioning motor 732, particularly in the form of a stepper motor. The at least one positioning motor 732 of the actuator assembly 130 can individually control a radial position of the magnet segments. Controlling of the positioning motor 732 can be for tuning of local field strengths, particularly magnetic field strengths at the different positions in the length direction fsof the sputter target 112. The tuning of local field strengths, particularly magnetic field strengths, can be based on any of the following: the rate of erosion and / or consumption of the sputter target 112; the rate of deposition; the material being deposited; the process gas being used; the distance between the sputter target 112 and the substrate 10; an erosion depth of the sputter target 112 being position-dependent; a layer uniformity measurement, which may particularly be measured after layer deposition and which may further optionally provide a closed loop control, or any combination thereof. Additionally or alternatively, one or more layer properties of a deposited layer can be a layer thickness, opto-electronic properties such as refractive index and / or resistance. Layer properties can be measured, particularly in an in-line application by a special metrology, such that a closed loop control can be provided.

[0099] The actuator assembly 130 can be controlled at the individual positions by locally displacing, particularly retracting or advancing, at different positions in the length direction fs. At least locally displacing the actuator assembly enables providing a predetermined local magnetic field strength during sputtering at an outersurface of the sputter target 112. In particular, the actuator assembly 130 can be controlled when an erosion and / or consumption depth of the sputter target 112 is position-dependent, and wherein a negative target voltage decreases with a smaller radial distance between the sputter target 112 and the magnet assembly 120.

[0100] The angular movement of the magnet assembly 120 can take the form according to some of the embodiments described herein, such as, for example, reciprocal rotating movement, wobbling, or SSM. The magnet assembly 120 can be angularly moved back and forth between two turnaround angular positions, a start of movement range 317 and an end of movement range 319. Optionally, the actuator assembly 130 can be angularly moved while moving the magnet assembly 120, particularly wherein the magnet assembly 120 and / or the actuator assembly 130 is angularly moved by wobbling or SSM.

[0101] The method 900 can further comprise a controller to control the displacement of the magnet assembly by controlling the actuator assembly to individually retract a plurality of magnet segments 524 of the magnet assembly 120, depending on a thickness of the sputter target 112. The control can be used for automated local displacement of the magnet assembly 120, and particularly for the automated local displacement of the individual magnet segments of the plurality of magnet segments 524.

[0102] According to some embodiments, which can be combined with other embodiments described herein, the radial distance of the magnet assembly 120 can be kept essentially constant during the layer deposition process. In other words, the magnet assembly 120 can be stationary or fixed in position. The radial distance can be adjusted before the deposition process begins. In other embodiments, the radial distance of the magnet assembly 120 can change during the layer deposition process. In other words, the magnet assembly 120 can be locally displaced during the layer deposition process.

[0103] In some implementations, the adjusting of the radial distance of the magnet assembly 120 can include angularly moving the magnet assembly 120 around the rotation axis 116. As an example, the magnet assembly 120 can performa wobbling motion or oscillating motion around the rotational axis during the layer deposition process. In other examples, the radial distance of the magnet assembly 120 can be set before the layer deposition process starts. The radial distance of the magnet assembly 120 can be kept essentially constant or fixed during the layer deposition process.

[0104] According to some embodiments, which can be combined with other embodiments described herein, the radial distance of the magnet assembly 120 can be adjusted based on one or more layer-characteristics of the layer to be deposited on the substrate 10 and / or one or more sputter characteristics of the layer deposition process and / or one or more process control parameters of the layer deposition process.

[0105] The one or more layer-characteristics can be selected from the group consisting of a layer thickness, a layer homogeneity, a layer structure, and any combination thereof. The one or more sputter characteristics can be selected from the group consisting of ion bombardment properties, target erosion, a substrate temperature, and any combination thereof. The one or more process control parameters which influence the magnetic field strength can be selected from the group consisting of a sputter power, target voltage, target current, a process pressure, a partial pressure of reactive gases, and any combination thereof. As an example, the one or more process control parameters can be varied as a function of magnet angle to optimize layer properties.

[0106] In some implementations, the actuator assembly 130 can be controlled to individually retract or advance the plurality of magnet segments 524. For example, the actuator assembly 130 can be controlled to individually control the retraction or advancement of the plurality of magnet segments 524 of the magnet assembly 520 according to a thickness of the sputter target 112, particularly for an automated local displacement.

[0107] According to embodiments described herein, the method for layer deposition on a substrate can be conducted using computer programs, software, computer software products and the interrelated controllers, which can have a CPU,a memory, a user interface, and input and output devices being in communication with the corresponding components of the apparatus for processing a large area substrate.

[0108] The present disclosure integrates a movable adjustable magnet assembly 120 within a sputter target 112 in a sputter deposition source 100 which can be repeatedly and precisely moved and adjusted. A radial distance of the magnet assembly 120 with respect to the sputter target 112 is adjusted such that properties or characteristics of the deposited layer and / or characteristics of the layer deposition process can be adjusted. The radial adjustment can particularly take place in addition to the angular movement of the magnet assembly 120 or simultaneously to the angular movement of the magnet assembly 120.

[0109] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

CLAIMSWhat is claimed is:1 . A sputter deposition source (100), comprising: a cathode drive unit (410) configured to hold a sputter target (112), the cathode drive unit having a first drive configured to rotate the sputter target around a rotation axis (116) along a length direction (ts) of the sputter target, a magnet assembly (120) with one or more magnet segments, the magnet assembly being connected to a second drive for a first angular movement of the magnet assembly around the rotation axis (116), and an actuator assembly (130) for at least locally displacing the magnet assembly in a radial direction and configured to adjust a distance between the magnet assembly and the sputter target.

2. The sputter deposition source of to claim 1 , wherein the second drive is configured to provide a second angular movement of the actuator assembly.

3. The sputter deposition source of any of claims 1 to 2, wherein the one or more magnet segments (524) comprises rigid magnets (126) arranged along the length direction.

4. The sputter deposition source of any of claims 1 to 3, wherein the one or more magnet segments are a plurality of magnet segments, and wherein gaps (528) are provided between adjacent magnet segments of the plurality of magnet segments.

5. A sputter deposition source (100), comprising: a cathode drive unit (410) configured to hold a sputter target (112), the cathode drive unit having a first drive configured to rotate the sputter target around a rotation axis (116) along a length direction (ts) of the sputter target, a magnet assembly (120) with a plurality of magnet segments having rigid magnets (126) arranged along the length direction, and an actuator assembly (130) for at least locally displacing the magnet assembly in a radial direction and configured to adjust a distance between the magnet assembly and the sputter target, wherein gaps (528) are provided between adjacent magnet segments of the plurality of magnet segments.

6. The sputter deposition source of any of claims 4 or 5, wherein the gaps are at least one of 1 .0 mm or below, or 0.01 mm or above.

7. The sputter deposition source of any of claims 4 to 6, wherein two adjacent magnet segments of the plurality of magnet segments are connected by a flexible hinge (640).

8. The sputter deposition source of claim 7, wherein the flexible hinge comprises a flexible metal strip (642).

9. The sputter deposition source of any of claims 4 to 8, wherein the actuator assembly comprises:a plurality of actuators having a first actuator, a second actuator, and one or more third actuators, wherein each of the plurality of actuators is coupled to a corresponding magnet segment of the plurality of magnet segments.

10. The sputter deposition source of claim 9, wherein each of the plurality of actuators is configured to locally adjust, along the length direction, a radial position of the corresponding magnet segment at an actuator position, particularly wherein the radial position of each of the corresponding magnet segments is individually controllable.11 . The sputter deposition source of claim 10, wherein the actuator assembly is configured to adjust the radial position of each magnet segment of the plurality of the magnet segments, particularly wherein the radial position of each of the magnet segments at an actuator position is individually controllable.

12. The sputter deposition source of any of claims 10 to 11 , wherein each of the plurality of actuators comprises: a positioning motor (732) with a displacement range in the radial direction of 4 mm or more, particularly at least 15 mm, particularly for an automated local adjusting of the distance.

13. The sputter deposition source of claim 12, wherein the positioning motor is connected to the corresponding magnet segment via a spring fixing.

14. The sputter deposition source according to any of claims 9 to 13, wherein each of the plurality of actuators further comprises one or more of: a threaded spindle (736) and a linear guide (739).

15. The sputter deposition source of any of claims 1 to 14, further comprising: a controller configured to locally retract or advance at different positions in the length direction to provide a predetermined local magnetic field strength during sputtering at an outer surface of the sputter target.

16. A method of depositing a material on a substrate, comprising: sputtering the material from at least one sputter target (112) held at a cathode drive unit (410), the cathode drive unit with the sputter target rotating around a rotation axis (116) extending along a length direction (ts); angularly moving a magnet assembly (120) that is arranged internally to the sputter target; and displacing the magnet assembly at two or more positions along the length direction in a radial direction with an actuator assembly (130) for adjusting a distance between the magnet assembly and the sputter target.

17. A method of depositing a material on a substrate, comprising: sputtering the material from at least one sputter target (112) held at a cathode drive unit (410), the cathode drive unit with the sputter target rotating around a rotation axis (116) extending along a length direction (ts); displacing a magnet assembly with a plurality of magnet segments having rigid magnets (126) arranged along the length direction at a first positions alongthe length direction in a radial direction with an actuator assembly (130) for adjusting a first distance between the magnet assembly and the sputter target; and displacing the magnet assembly in a radial direction with an actuator assembly (130) for adjusting a second distance between the magnet assembly and the sputter target.

18. The method according to any of claims 16 to 17, wherein displacing the magnet assembly comprises individually displacing at least two magnet segments of a plurality of magnet segments (524) comprising rigid magnets (126) arranged along the length direction in the radial direction by 1 mm or more, particularly by2 mm or more, more particularly by up to 25 mm.

19. The method according to claim 18, further comprises individually controlling a radial position of the magnet segments for tuning of local field strengths at the positions by locally retracting or advancing at different positions in the length.

20. The method according to any of claims 16 to 19, wherein the magnet assembly is angularly moved back and forth between two turnaround angular positions; particularly further comprising angularly moving the actuator assembly while moving the magnet assembly; and more particularly wherein the magnet assembly and / or the actuator assembly is angularly moved by wobbling or SSM.21 . The method according to any of claims 18 to 20, wherein controlling the actuator assembly to individually retract or advance the plurality of magnet segments (524) of the magnet assembly depends on a thickness of the sputter target, particularly for an automated local displacement.

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