High-frequency system and communication device

Abstract

Provided is a high-frequency system which can be miniaturized. A high-frequency system (1) is provided with a power amplifier (13), a shared filter (12), first filters (32, 33), and a first switch (11). The power amplifier (13) amplifies a first transmission signal of the communication band for the NTN and a second transmission signal of the communication band for the GSM. The shared filter (12) is connected to an output unit (13b) of the power amplifier (13) and cuts high-frequency components of the first transmission signal and the second transmission signal. The first filters (32, 33) have a passband including the transmission band of a communication band for the NTN. The first switch (11) selects the connection destination of an output unit (12b) of the shared filter (12) from among the first filters (32, 33) connected to a first antenna terminal (30a), and a second antenna terminal (10a).

Description

High frequency systems and communication devices

[0001] The present invention generally relates to a radio frequency system and a communication device, and more particularly to a radio frequency system that processes transmission signals in a communication band for GSM (global system for mobile communications) and a communication band for NTN (Non-Terrestrial Network), and a communication device that includes the radio frequency system.

[0002] The satellite / terrestrial shared mobile phone system (high frequency system) described in Patent Document 1 includes a satellite duplexer connected to a satellite (NTN) antenna, a satellite RF transmitting circuit and a satellite RF receiving circuit connected to the satellite duplexer, a terrestrial duplexer connected to a terrestrial (GSM) antenna, and a terrestrial RF transmitting circuit and a terrestrial RF receiving circuit connected to the terrestrial duplexer.

[0003] JP 2010-278886 A

[0004] The satellite / terrestrial shared mobile phone system described in Patent Document 1 has separate transmitting RF circuits and receiving RR circuits for the satellite system (for NTN) and the terrestrial system (for GSM), which causes the problem of the system becoming large in size.

[0005] In view of the above problems, an object of the present invention is to provide a high-frequency system and a communication device that can be miniaturized.

[0006] A high-frequency system according to one aspect of the present invention includes a power amplifier, a shared filter, a first filter, and a first switch. The power amplifier amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band. The shared filter is connected to an output of the power amplifier and cuts high-frequency components of the first transmission signal and the second transmission signal. The first filter has a passband that includes the transmission band of the NTN communication band. The first switch selects a connection destination of the output of the shared filter from the first filter connected to a first antenna terminal and a second antenna terminal.

[0007] A high-frequency system according to one aspect of the present invention includes a power amplifier, a shared filter, a first filter, a first switch, a receive filter, and a second switch. The power amplifier amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band. The shared filter is connected to an output of the power amplifier and cuts high-frequency components of the first transmission signal and the second transmission signal. The first filter has a passband that includes the transmit band of the NTN communication band. The first switch selects a connection destination for the output of the shared filter from among the first filter connected to a first antenna terminal and a path. The receive filter has a passband that includes the receive band of the NTN communication band. The second switch selects a connection destination for a second antenna terminal from among at least the receive filter and the path. The first antenna terminal and the second antenna terminal are connected to different antennas.

[0008] A high-frequency system according to one aspect of the present invention includes a power amplifier, a first filter, a second filter, and a first switch. The power amplifier amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band. The first filter has a passband that includes the transmission band of the NTN communication band. The second filter cuts high-frequency components of the second transmission signal. The first switch selects a connection destination of an output section of the power amplifier from at least the first filter and the second filter.

[0009] A communication device according to one aspect of the present invention includes the high-frequency system and a signal processing circuit connected to the high-frequency system and processing a high-frequency signal.

[0010] The high frequency system, high frequency module, and communication device according to the present invention have the advantage that they can be made smaller.

[0011] FIG. 1 is a block diagram of a high-frequency system and a communication device according to a first embodiment. FIG. 2 is a block diagram of a high-frequency system and a communication device according to a first modification of the first embodiment. FIG. 3 is a block diagram of a high-frequency system and a communication device according to a second modification of the first embodiment. FIG. 4 is a block diagram of a high-frequency system and a communication device according to the second embodiment. FIG. 5 is a block diagram of a high-frequency system and a communication device according to a first modification of the second embodiment. FIG. 6 is a block diagram of a high-frequency system and a communication device according to a third embodiment. FIG. 7 is a block diagram of a high-frequency system and a communication device according to a fourth embodiment. FIG. 8 is a block diagram of a high-frequency system and a communication device according to a fifth embodiment. FIG. 9 is a block diagram of a high-frequency system and a communication device according to a sixth embodiment. FIG. 10 is a plan view illustrating the arrangement of a plurality of electronic components and a plurality of external terminals in a high-frequency system according to a seventh embodiment.

[0012] First Embodiment A high frequency system 1 and a communication device 100 according to a first embodiment will be described in detail with reference to the drawings.

[0013] (1) Overview As shown in FIG. 1 , a high-frequency system 1 according to the first embodiment includes a power amplifier 13, a shared filter 12, filters 32 and 33 (first filters), and a switch 11 (first switch). The power amplifier 13 amplifies a first transmission signal in a communication band for a non-terrestrial network (NTN) and a second transmission signal in a communication band for a global system for mobile communications (GSM). The shared filter 12 is connected to an output section 13b of the power amplifier 13 and cuts high-frequency components of the first transmission signal and the second transmission signal. The filters 32 and 33 have a passband that includes the transmission band of the NTN communication band. The switch 11 selects a connection destination of the output section 12b of the shared filter 12 from among the filters 32 and 33 connected to an external terminal 30a (first antenna terminal) and the external terminal 10a (second antenna terminal).

[0014] With this configuration, the power amplifier 13 is shared between NTN and GSM, thereby enabling a reduction in the size of the high-frequency system 1. Furthermore, because the shared filter 12 is shared between NTN and GSM, the function of cutting out high-frequency components of the first transmission signal from the filters 32 and 33 can be simplified, thereby enabling a reduction in the weight of the filters 32 and 33 and an improvement in the design flexibility.

[0015] (2) Configuration of the Communication Device As shown in FIG. 1 , the communication device 100 is a communication device including a high-frequency system 1. The communication device 100 is, for example, a mobile terminal (e.g., a smartphone), but is not limited to a mobile terminal and may be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency system 1 is, for example, a module compatible with the 4G (fourth generation mobile communication) standard and the 5G (fifth generation mobile communication) standard. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project) or the LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0016] In addition to the high frequency system 1 , the communication device 100 further includes a signal processing circuit 2 and antennas 3 and 4 .

[0017] Antenna 3 is an antenna capable of transmitting and receiving signals in a terrestrial communication band. Antenna 4 is an antenna capable of transmitting and receiving signals in a communication band for NTN. Antennas 3 and 4 are separate antennas.

[0018] The high frequency system 1 is configured to amplify a transmission signal (high frequency signal) output from the signal processing circuit 2 and transmit it from the antenna 3 or 4. The high frequency system 1 may also be configured to amplify a reception signal (high frequency signal) received by the antenna 3 or 4 and output it to the signal processing circuit 2. The high frequency system 1 is controlled by the signal processing circuit 2, for example.

[0019] The signal processing circuit 2 is configured to process a transmission signal to be output to the high frequency system 1. Note that, if the high frequency system 1 is further configured to amplify a reception signal (high frequency signal) received by the antenna 3 or 4 and output the amplified signal to the signal processing circuit 2, the signal processing circuit 2 may further be configured to process the reception signal output from the high frequency system 1. The signal processing circuit 2 includes an RF (Radio Frequency) signal processing circuit 21 and a baseband signal processing circuit 22.

[0020] The RF signal processing circuit 21 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high-frequency signal (transmission signal). The RF signal processing circuit 21 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 22, and outputs the result to the high-frequency system 1. Note that if the high-frequency system 1 is configured to further amplify a reception signal received by the antenna 3 or 4 and output the result to the signal processing circuit 2, the RF signal processing circuit 21 may further perform signal processing such as down-conversion on the reception signal output from the high-frequency system 1, and output the result to the baseband signal processing circuit 22.

[0021] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 generates a transmission signal from a baseband signal (e.g., an audio signal and an image signal) input from the outside and outputs the generated transmission signal to the RF signal processing circuit 21. Note that if the high-frequency system 1 is further configured to amplify a reception signal received by the antenna 3 or 4 and output the amplified reception signal to the signal processing circuit 2, the baseband signal processing circuit 22 may further output the reception signal output from the RF signal processing circuit 21 to the outside. This output signal (reception signal) can be used, for example, as an image signal for image display or as an audio signal for communication.

[0022] (3) Configuration of High-Frequency System 1 The high-frequency system 1 according to the first embodiment transmits signals in two systems: a communication band for NTN and a terrestrial communication band (for example, a communication band for GSM). The "communication band for NTN" is a communication band used for communications carried out in NTN. The "terrestrial communication band" is a communication band used for communications carried out using base stations installed on the ground. The "communication band for GSM" is a communication band used for communications carried out in GSM.

[0023] As shown in FIG. 1 , the high frequency system 1 includes a first high frequency module 6 and a second high frequency module 7 .

[0024] The first high-frequency module 6 processes transmission signals in a terrestrial communication band transmitted from the antenna 3. The terrestrial communication band includes a communication band for GSM (global system for mobile communications). The GSM communication band includes, for example, at least one of GSMH and GSML (e.g., GSML in the first embodiment). The second high-frequency module 7 processes transmission signals in an NTN communication band transmitted from the antenna 4. The NTN communication band includes, for example, at least one of n255 and n256 (both in the first embodiment). The second high-frequency module 7 is connected to the first high-frequency module 6. The second high-frequency module 7 amplifies transmission signals in the NTN communication band transmitted from the antenna 4 using a power amplifier 13 (described later) of the first high-frequency module 6. By connecting the second high-frequency module 7 to the first high-frequency module 6, the high-frequency system 1 can be retrofitted with a function for transmitting transmission signals in the NTN communication band.

[0025] (3-1) Configuration of the First High-Frequency Module 6 As shown in Fig. 1, the first high-frequency module 6 includes a plurality of external terminals 10a to 10c and a plurality of electronic components. In the example of Fig. 1, the plurality of electronic components include a switch 11 (first switch), a shared filter 12, and a power amplifier 13.

[0026] The external terminal 10a is an antenna terminal (second antenna terminal) to which the antenna 3 is connected. The external terminal 10b is connected to an output section (not shown) of the signal processing circuit 2 and is an input terminal for inputting a transmission signal processed by the signal processing circuit 2 to the high-frequency system 1. The external terminal 10c is connected to an external terminal 30b (described later) of the second high-frequency module 7 and is an output terminal for outputting a transmission signal for NTN processed in the first high-frequency module 6 to the external terminal 30b of the second high-frequency module 7. The external terminal 10c is connected to the external terminal 30b (described later) of the second high-frequency module 7 via a path L3.

[0027] In the first embodiment, "A is connected to B" does not necessarily mean that A is directly connected to B, but also means that A is indirectly connected to B via another electronic component. Furthermore, "A is connected to B" means that A and B are electrically connected (i.e., electrically connected).

[0028] The switch 11 selects the connection destination of the output section 12b of the shared filter 12 from among the external terminals 10a and 10c. The external terminal 10a is connected to the antenna 3. The external terminal 10c is connected to filters 32 and 33 (first filters), as described below. Therefore, the switch 11 selects the connection destination of the output section 12b of the shared filter 12 from among the filters 32 and 33 and the antenna 3. The switch 11 is, for example, a switch IC (Integrated Circuit). The switch 11 is controlled, for example, by the signal processing circuit 2. The switch 11 has a common terminal 11a and multiple (two in the example of FIG. 1 ) selection terminals 11b and 11c. The common terminal 11a can be selectively connected to at least one of the multiple selection terminals 11b and 11c. The common terminal 11a is connected to the output section 12b of the shared filter 12. The selection terminal 11b is connected to the external terminal 10c. The selection terminal 11c is connected to the external terminal 10a.

[0029] More specifically, the common terminal 11a is connected to the external terminal 10b via a path L1. A shared filter 12 and a power amplifier 13 are provided on the path L1. The selection terminal 11b is connected to the external terminal 10c via a path L2. As will be described later, the external terminal 10c is connected to an external terminal 30a (first antenna terminal) via a path L7 that includes multiple paths L3 to L6. Filters 32 and 33 are provided on each path L5. Therefore, the selection terminal 11b is connected to the external terminal 30a, and is also connected to the path L7 on which the filters 32 and 33 are provided. The selection terminal 11c is connected to the external terminal 10a via a path L8. That is, the selection terminal 11c is connected to the path L8 that is connected to the external terminal 10a.

[0030] The shared filter 12 is a low-pass filter that cuts off high-frequency components of a transmission signal (first transmission signal) in an NTN communication band and a transmission signal (second transmission signal) in a terrestrial communication band (e.g., a GSM communication band). The upper limit frequency (second upper limit frequency) of the transmission band of the GSM communication band is higher than the upper limit frequency (first upper limit frequency) of the transmission band of the NTN communication band. The shared filter 12 cuts off frequency components higher than a predetermined cutoff frequency for the first transmission signal and the second transmission signal. The predetermined cutoff frequency is, for example, the first upper limit frequency or a frequency between the first and second upper limit frequencies. As a result, the shared filter 12 cuts off frequency components higher than the same cutoff frequency for the transmission signals (first transmission signal and second transmission signal) in different communication bands. The shared filter 12 is connected between the power amplifier 13 and the common terminal 11a of the switch 11. The shared filter 12 has an input section 12a and an output section 12b. The shared filter 12 receives a signal (transmission signal) from the input section 12a, cuts out high frequency components of the received signal, and outputs the signal from which the high frequency components have been cut out from the output section 12b.

[0031] The power amplifier 13 amplifies a signal (transmission signal) input from the signal processing circuit 2 via the external terminal 10b to the high frequency system 1. In the first embodiment, the signal processing circuit 2 inputs a transmission signal in the GSM communication band and a transmission signal in the NTN communication band from the external terminal 10b to the high frequency system 1. Therefore, the power amplifier 13 amplifies the transmission signal in the GSM communication band and the transmission signal in the NTN communication band.

[0032] The power amplifier 13 is connected between the external terminal 10b and the shared filter 12. The power amplifier 13 has an input section 13a and an output section 13b. The input section 13a is connected to the external terminal 10b. The output section 13b is connected to the input section 12a of the shared filter 12. The power amplifier 13 amplifies the signal (transmission signal) input to the input section 13a and outputs the amplified signal from the output section 13b.

[0033] (3-2) Configuration of the Second High-Frequency Module 7 As shown in Fig. 1, the second high-frequency module 7 includes a plurality of (two in the example of Fig. 1) external terminals 30a, 30b and a plurality of electronic components. In the example of Fig. 1, the plurality of electronic components include a switch 31, a plurality of (two in the example of Fig. 1) filters 32, 33, and a switch 34.

[0034] The external terminal 30a is an antenna terminal (first antenna terminal) to which the antenna 4 is connected. The external terminal 30b is connected to the external terminal 10c of the first high-frequency module 6 and is an input terminal that inputs a signal output from the external terminal 10c. The external terminal 30b is connected to the external terminal 10c of the first high-frequency module 6 via a path L3.

[0035] The switch 31 is, for example, an antenna switch. The switch 31 selects a connection destination of the external terminal 30a from among a plurality of filters 32 and 33. The switch 31 is, for example, a switch IC. The switch 31 is controlled, for example, by the signal processing circuit 2. The switch 31 has a common terminal 31a and a plurality of (two in the example of FIG. 1 ) selection terminals 31b and 31c. The common terminal 31a can be selectively connected to at least one of the plurality of selection terminals 31b and 31c. The common terminal 31a is connected to the external terminal 30a via a path L6. The selection terminal 31b is connected to a selection terminal 34b (described later) of the switch 34 via a path L5. A filter 32 is provided on the path L5. The selection terminal 31c is connected to a selection terminal 34c (described later) of the switch 34 via another path L5. A filter 33 is provided on another path L5.

[0036] The filter 32 is a transmission filter having a passband that includes the transmission band of the first communication band for NTN. The first communication band is, for example, n255. Hereinafter, the transmission band of n255 may be referred to as n255Tx. The filter 32 is provided on the path L5. That is, the filter 32 is connected between a selection terminal 31b of the switch 31 and a selection terminal 34b (described later) of the switch 34. The filter 32 has an input unit 32a and an output unit 32b. The input unit 32a is connected to a selection terminal 34b (described later) of the switch 34. The output unit 32b is connected to the selection terminal 31b of the switch 31. The filter 32 receives a signal (transmission signal) from the input unit 32a, restricts the input signal to a signal in the transmission band of the first communication band (for example, n255Tx), passes the signal, and outputs the passed signal from the output unit 32b.

[0037] The filter 33 is a transmission filter having a passband that includes the transmission band of the second communication band for NTN. The second communication band is a communication band different from the first communication band, e.g., n256. Hereinafter, the transmission band of n256 may be referred to as n256Tx. The filter 33 is provided on another path L5. That is, the filter 33 is connected between a selection terminal 31c of the switch 31 and a selection terminal 34c (described later) of the switch 34. The filter 33 has an input unit 33a and an output unit 33b. The input unit 33a is connected to a selection terminal 34c (described later) of the switch 34. The output unit 33b is connected to the selection terminal 31c of the switch 31. The filter 33 receives a signal (transmission signal) from the input unit 33a, restricts the input signal to a signal in the transmission band of the second communication band (e.g., n255Tx), passes the signal, and outputs the passed signal from the output unit 33b.

[0038] The switch 34 is, for example, a band select switch. The switch 34 selects a connection destination of the external terminal 30b from among the plurality of filters 32 and 33. The external terminal 30b is connected to the output section 12b of the shared filter 12 via a path including paths L3, L2, and L1. Therefore, the switch 34 selects one filter from the plurality of filters 32 and 33 to be connected to the output section 12b of the shared filter 12. The switch 34 is, for example, a switch IC. The switch 34 is controlled by, for example, the signal processing circuit 2. The switch 34 has a common terminal 34a and a plurality of (two in the example of FIG. 1 ) selection terminals 34b and 34c. The common terminal 34a can be selectively connected to at least one of the plurality of selection terminals 34b and 34c. The common terminal 34a is connected to the external terminal 30b via path L4. The selection terminal 34b is connected to the input section 32a of the filter 32. The selection terminal 31 c is connected to the input section 33 a of the filter 33 .

[0039] (4) Operation of the High-Frequency System 1 (4-1) Operation When Transmitting a Transmission Signal in the GSM Communication Band The operation when transmitting a transmission signal in the GSM communication band will be described with reference to Fig. 1. In this case, the common terminal 11a of the switch 11 is connected to the selection terminal 11c. A transmission signal in the GSM communication band is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the shared filter 12, the switch 11, and the external terminal 10a, and is transmitted from the antenna 3.

[0040] (4-2) Operation when Transmitting a Transmission Signal in an NTN Communication Band With reference to FIG. 1 , the operation when transmitting a transmission signal in an NTN communication band (e.g., n255Tx) will be described. In this case, in the switch 11, the common terminal 11a is connected to the selection terminal 11b. In the switch 31, the common terminal 31a is connected to the selection terminal 31b. In the switch 34, the common terminal 34a is connected to the selection terminal 34b. Then, an n255Tx signal (transmission signal) is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the shared filter 12, the switch 11, the external terminal 10c, the external terminal 30b, the switch 34, the filter 32, the switch 31, and the external terminal 30a, and is transmitted from the antenna 4.

[0041] When transmitting an n256Tx transmission signal, the common terminal 31a is connected to the selection terminal 31c in the switch 31. Furthermore, the common terminal 34a is connected to the selection terminal 34c in the switch 34. The transmission signal input from the signal processing circuit 2 to the external terminal 10b passes through the external terminal 10b, power amplifier 113, shared filter 12, switch 11, external terminal 10c, external terminal 30b, switch 34, filter 33, switch 31 and external terminal 30a, and is transmitted from the antenna 4.

[0042] (5) Miniaturization of the High-Frequency System 1 In the first embodiment, the power amplifier 13 is shared between amplifying transmission signals in the NTN communication band and amplifying transmission signals in the GSM communication band, thereby miniaturizing the high-frequency system 1.

[0043] (6) Effects The high-frequency system 1 according to the first embodiment includes a power amplifier 13, a shared filter 12, filters 32 and 33 (first filters), and a switch 11 (first switch). The power amplifier 13 amplifies a transmission signal in the NTN communication band (first transmission signal) and a transmission signal in the GSM communication band (second transmission signal). The shared filter 12 is connected to the output section 13b of the power amplifier 13 and cuts high-frequency components of the first transmission signal and the second transmission signal. The filters 32 and 33 have a passband that includes the transmission band of the NTN communication band. The switch 11 selects the connection destination of the output section 12b of the shared filter 12 from among the filters 32 and 33 connected to the external terminal 30a (first antenna terminal) and the external terminal 10a (second antenna terminal).

[0044] With this configuration, the power amplifier 13 is shared between NTN and GSM, thereby enabling a reduction in the size of the high-frequency system 1. Furthermore, because the shared filter 12 is shared between NTN and GSM, the function of cutting out high-frequency components of the first transmission signal from the filters 32 and 33, which are NTN filters, can be simplified, thereby enabling a reduction in the weight of the filters 32 and 33 and an improvement in the degree of freedom in design.

[0045] The high-frequency system 1 according to the first embodiment also includes a first high-frequency module 6 and a second high-frequency module 7, which are separate from each other. The first high-frequency module 6 includes a power amplifier 13, a shared filter 12, and a switch 11 (first switch). The second high-frequency module 7 includes filters 32 and 33 (first filters).

[0046] According to this configuration, the filters 32 and 33 can be configured as separate modules from the configuration (first high-frequency module 6) including the power amplifier 13, the shared filter 12, and the switch 11. This allows the filters 32 and 33 to be easily added later to the high-frequency system 1. Furthermore, the filters 32 and 33 can be insulated and isolated from the configuration (first high-frequency module 6) including the power amplifier 13, the shared filter 12, and the switch 11. This reduces the electromagnetic influence of the filters 32 and 33 on the configuration of the first high-frequency module 6.

[0047] Furthermore, in the high-frequency system 1 according to the first embodiment, the external terminal 30a (first antenna terminal) is connected to the antenna 4 (first antenna). The external terminal 10a (second antenna terminal) is connected to an antenna 3 (second antenna) that is separate from the antenna 4. This configuration makes it possible to prevent radio waves of the transmission signal (i.e., the transmission signal in the NTN communication band) transmitted from the antenna 4 from affecting the antenna 3 and other electronic components (such as the power amplifier 13 and the shared filter 12).

[0048] Moreover, the communication device 100 according to the first embodiment includes a high-frequency system 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high-frequency system 1 and processes high-frequency signals. With this configuration, it is possible to provide a communication device 100 that has the effects of the high-frequency system 1.

[0049] (7) Modifications Modifications of embodiment 1 will be described. In the following description, the same configurations as embodiment 1 will be omitted, and the description will focus on configurations that are different from embodiment 1. The following modifications may be implemented in combination.

[0050] (7-1) Modification 1 (7-1-1) Configuration As shown in FIG. 2, the high-frequency system 1 according to Modification 1 has the same configuration as the high-frequency system 1 according to Embodiment 1, except that it further includes a filter 18 (low-pass filter), a bypass path L12, a switch 16 (bypass switch), and a matching circuit 17.

[0051] The filter 18 is an NTN low-pass filter for cutting high-frequency components of a transmission signal (first transmission signal) in the NTN communication bands (n255 and n256). The filter 18 cuts off frequency components of the first transmission signal that are higher than the upper limit frequency of the transmission band of the NTN communication band. That is, the cutoff frequency of the filter 18 (the upper limit frequency of the transmission band of the NTN communication band) is lower than the cutoff frequency of the shared filter 12 (e.g., the upper limit frequency of the transmission band of the GSM communication band). The filter 18 further cuts off high-frequency components of the first transmission signal from which high-frequency components have been cut by the shared filter 12 (i.e., it cuts off high-frequency components not cut off by the shared filter 12). The filter 18 is connected between the shared filter 12 and the common terminal 11a of the switch 11. The filter 18 has an input section 18a and an output section 18b. The filter 18 receives a signal (transmission signal) from an input section 18a, cuts out high frequency components of the received signal, and outputs the signal from which the high frequency components have been cut out from an output section 18b.

[0052] The bypass path L12 is connected in parallel to the filter 18, that is, between the input 18a and the output 18b of the filter 18.

[0053] The switch 16 is provided in the bypass path L12 and turns on and off the bypass path L12. When the switch 16 turns on the bypass path L12, all output signals from the shared filter 12 flow through the bypass path L12 and are not input to the input section 18a of the filter 18. Therefore, in this case, the filter 18 essentially does not function, and the function of the filter 18 is disabled. On the other hand, when the switch 16 turns off the bypass path L12, all output signals from the shared filter 12 do not flow through the bypass path L12 but are input to the input section 18a of the filter 18, and high-frequency components are cut by the filter 18. Therefore, in this case, the function of the filter 18 is enabled. The switch 16 is, for example, a switch IC. The switch 16 is controlled by, for example, the signal processing circuit 2.

[0054] The matching circuit 17 is a circuit for achieving impedance matching between the output part 13b of the power amplifier 13 and the shared filter 12. The matching circuit 17 is connected between the output part 13b of the power amplifier 13 and the shared filter 12.

[0055] (7-1-2) Operation The operation of the high frequency system 1 according to the first modification will be described with reference to FIG.

[0056] First, the operation when transmitting a transmission signal in the GSM communication band will be described. In this case, the switch 16 makes the bypass path L12 conductive, disabling the filter 18. In the switch 11, the common terminal 11a is connected to the selection terminal 11c. A transmission signal in the GSM communication band is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, matching circuit 17, shared filter 12, switch 16, switch 11, and external terminal 10a, and is transmitted from the antenna 3. At this time, high-frequency components of the transmission signal are cut by a single-stage filter made up of the shared filter 12.

[0057] Next, an operation will be described when transmitting a signal (transmission signal) in the transmission band (e.g., n255Tx) of the NTN communication band. In this case, the switch 16 blocks the bypass path L12 and enables the filter 18. In the switch 11, the common terminal 11a is connected to the selection terminal 11b. In the switch 31, the common terminal 31a is connected to the selection terminal 31b. In the switch 34, the common terminal 34a is connected to the selection terminal 34b. Then, an n255Tx signal (transmission signal) is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the shared filter 12, the filter 18, the switch 11, the external terminal 10c, the external terminal 30b, the switch 34, the filter 32, the switch 31, and the external terminal 30a, and is transmitted from the antenna 4. At this time, high-frequency components of the transmission signal are cut by a two-stage filter consisting of the shared filter 12 and the filter 18.

[0058] (7-1-3) Effects The high-frequency system 1 according to the first modification includes a filter 18 (low-pass filter) and a switch 16 (bypass switch). The filter 18 is provided between the shared filter 12 and the switch 11 (first switch) and further cuts high-frequency components of a transmission signal (first transmission signal) in the NTN communication band. The switch 16 is provided in a bypass path L12 connected in parallel to the filter 18 and turns on and off the bypass path L12. The switch 16 turns off the bypass path L12 when the power amplifier 13 amplifies and outputs the first transmission signal, and turns on the bypass path L12 when the power amplifier 13 amplifies and outputs the second transmission signal.

[0059] According to this configuration, the function of the filter 18 can be switched between enabled and disabled by switching the bypass path L12 between conductive and blocked states using the switch 16. More specifically, when the power amplifier 13 amplifies and outputs a transmission signal (second transmission signal) in the GSM communication band, the filter 18 can be disabled using the switch 16, allowing the single-stage filter made up of the shared filter 12 to appropriately cut high-frequency components of the transmission signal (second transmission signal) in the GSM communication band in accordance with the transmission bandwidth of the GSM communication band. Furthermore, when the power amplifier 13 amplifies and outputs a transmission signal (first transmission signal) in the NTN communication band, the two-stage filter made up of the shared filter 12 and the filter 18 can appropriately cut harmonic components of the transmission signal (first transmission signal) in the NTN communication band in accordance with the transmission bandwidth of the NTN communication band. In other words, lower frequencies can be cut compared to when high-frequency components of the second transmission signal are cut.

[0060] (7-2) Modification 2 As shown in FIG. 3 , in Modification 2, the antenna 3 in Embodiment 1 is shared between the antenna for GSM and the antenna for NTN. More specifically, in Modification 2, the antenna 4 in Embodiment 1 is omitted. In Modification 2, the external terminal 30a (second antenna terminal) in Embodiment 1 is connected to the external terminal 10a (first antenna terminal) instead of being connected to the antenna 4. That is, the external terminal 10a and the external terminal 30a are connected to the same antenna (for example, antenna 4). According to Modification 2, a shared antenna (for example, antenna 4) is used for NTN transmission and GSM transmission, which can contribute to the miniaturization of the communication device 100.

[0061] Second Embodiment A high-frequency system 1 according to a second embodiment will be described with reference to Fig. 4. In the following description, the same configuration as in the first embodiment will be omitted, and the description will focus on the configuration different from the first embodiment.

[0062] (1) Configuration As shown in Fig. 4, the second embodiment differs from the first embodiment in that the antenna 4 is omitted from the communication device 100, and the antenna 3 is shared by both GSM and NTN. The second embodiment also differs from the first embodiment in that the first high-frequency module 6 includes a GSM filter 15 instead of the shared filter 12. The second embodiment will be described in detail below.

[0063] 4, the communication device 100 according to the second embodiment is different from the communication device 100 according to the first embodiment in that the antenna 4 is omitted. That is, in the communication device 100 according to the second embodiment, the antenna 3 is shared by both GSM and NTN.

[0064] The first high-frequency module 6 according to the second embodiment differs from the first high-frequency module 6 according to the first embodiment in that it omits the shared filter 12 and further includes a switch 14, a filter 15, and an external terminal 10d. That is, the first high-frequency module 6 according to the second embodiment includes a plurality of external terminals 10a to 10d, a power amplifier 13, a switch 11 (first switch), a switch 14, and a filter 15 (second filter).

[0065] The multiple external terminals 10a to 10c, power amplifier 13, and switch 11 of embodiment 2 are configured similarly to the multiple external terminals 10a to 10c, power amplifier 13, and switch 11 of embodiment 1, and therefore detailed description thereof may be omitted. Furthermore, the second high-frequency module 7 of embodiment 2 is configured similarly to the second high-frequency module 7 of embodiment 1, and therefore description of its configuration may be omitted, with the same reference numerals used for the configuration of the second high-frequency module 7 of embodiment 1 being used.

[0066] The external terminal 10d is connected to the external terminal 30a of the second high-frequency module 7 via a path L9, and is an input terminal for inputting a transmission signal processed in the second high-frequency module 7 to the first high-frequency module 6.

[0067] In the second embodiment, the switch 11 is, for example, a band select switch. The switch 11 selects the connection destination of the output section 13b of the power amplifier 13 from among a plurality of filters (in the example of FIG. 4 , the filter 15, one of the filters 32 and 33 selected by the switch 34, and another filter (not shown)). The switch 11 is, for example, a switch IC. The switch 11 is controlled by, for example, the signal processing circuit 2. The switch 11 has a common terminal 11a and a plurality of selection terminals 11b to 11d (three in the example of FIG. 4 ). The common terminal 11a is connected to the output section 13b of the power amplifier 13. The selection terminal 11b is connected to the external terminal 10c via a path L2. The external terminal 10c is connected to the common terminal 34a of the switch 34 of the second high-frequency module 7 via paths L3 and L4. Therefore, the selection terminal 11b is connected to one of the filters (filters 32 and 33) selected by the switch 34. The selection terminal 11c is connected to an input section 15a (described later) of the filter 15. The selection terminal 11c is connected to a selection terminal 14c of the switch 14 via the filter 15. The selection terminal 11d is connected to a selection terminal 14d of the switch 14 via, for example, the other filter. The other filter is a transmission filter having a pass band different from the pass bands of the filters 15, 32, and 33.

[0068] The switch 14 is, for example, an antenna switch. The switch 14 selects the connection destination of the external terminal 10a connected to the antenna 3 from among the filter 15, the other filters, and the external terminal 10d. The external terminal 10d is connected to the common terminal 31a of the switch 31 of the second high-frequency module 7. Therefore, the switch 14 selects the connection destination of the external terminal 10a from among the filter 15, the other filters, and one filter selected by the switch 31 (i.e., filters 32 and 33). The switch 14 is, for example, a switch IC. The switch 14 is controlled by, for example, the signal processing circuit 2. The switch 14 has a common terminal 14a and multiple (three in the example of FIG. 1 ) selection terminals 14b to 14d. The common terminal 14a can be selectively connected to at least one of the multiple selection terminals 14b to 14d. The common terminal 14a is connected to the external terminal 10a. The selection terminal 14b is connected to the external terminal 10d. The selection terminal 14c is connected to the selection terminal 11c of the switch 11 via the filter 15. The selection terminal 14d is connected to the selection terminal 11d of the switch 11 via the other filter.

[0069] The filter 15 is a low-pass filter that cuts high-frequency components of a transmission signal (second transmission signal) in the GSM communication band. The filter 15 cuts frequency components of the second transmission signal that are higher than the upper limit frequency of the transmission band of the GSM communication band. The filter 15 is connected between the selection terminal 11c of the switch 11 and the selection terminal 14c of the switch 14. The filter 15 has an input unit 15a and an output unit 15b. The filter 15 receives a signal (transmission signal) from the input unit 15a, cuts high-frequency components from the input signal, and outputs the signal with the high-frequency components cut from the output unit 15b.

[0070] (2) Operation The operation of the high frequency system 1 according to the second embodiment will be described with reference to Fig. 4. First, the operation when transmitting a transmission signal in the GSM communication band will be described. In this case, in the switch 11, the common terminal 11a is connected to the selection terminal 11c. In addition, in the switch 14, the common terminal 14a is connected to the selection terminal 14c. Then, a transmission signal in the GSM communication band is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the switch 11, the filter 15, the switch 14, and the external terminal 10a, and is transmitted from the antenna 3.

[0071] Next, an operation will be described when transmitting a signal (transmission signal) in a transmission band (e.g., n255Tx) of the NTN communication band. In this case, in the switch 11, the common terminal 11a is connected to the selection terminal 11b. In the switch 14, the common terminal 14a is connected to the selection terminal 14b. In the switch 34, the common terminal 34a is connected to the selection terminal 34b. In the switch 31, the common terminal 31a is connected to the selection terminal 31b. Then, an n255Tx signal (transmission signal) is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the switch 11, the external terminal 10c, the external terminal 30b, the switch 34, the filter 32, the switch 31, the external terminal 30c, the external terminal 10d, the switch 14, and the external terminal 10a, and is transmitted from the antenna 3.

[0072] (3) Effects The high-frequency system 1 according to the second embodiment includes a power amplifier 13, filters 32 and 33 (first filters), a filter 15 (second filter), and a switch 11 (first switch). The power amplifier 13 amplifies a transmission signal in the NTN communication band (first transmission signal) and a transmission signal in the GSM communication band (second transmission signal). The filters 32 and 33 have passbands that include the transmission band of the NTN communication band. The filter 15 cuts high-frequency components of the second transmission signal. The switch 11 selects the connection destination of the output section 13b of the power amplifier 13 from at least the filters 32 and 33 and the filter 15. With this configuration, the power amplifier 13 is shared between the NTN and GSM systems, thereby enabling the high-frequency system 1 to be miniaturized.

[0073] The high-frequency system 1 according to the second embodiment further includes a switch 14 (second switch). The switch 14 selects a connection destination of the external terminal 10a (antenna terminal) from at least the filters 32 and 33 (first filters) and the filter 15 (second filter). With this configuration, the external terminal 10a is shared by both NTN and GSM, which contributes to miniaturization of the high-frequency system 1.

[0074] The high-frequency system 1 according to the second embodiment also includes a first high-frequency module 6 and a second high-frequency module 7, which are separate from each other. The first high-frequency module 6 includes a power amplifier 13, a switch (first switch), and a filter 15 (second filter). The second high-frequency module 7 includes filters 32 and 33 (first filters).

[0075] According to this configuration, the filters 32 and 33 can be configured as separate modules from the configuration (first high-frequency module 6) including the power amplifier 13, the switch 11, and the filter 15. This allows the filters 32 and 33 to be easily added later to the high-frequency system 1. Furthermore, the filters 32 and 33 can be physically isolated from the configuration (first high-frequency module 6) including the power amplifier 13, the switch 11, and the filter 15. This reduces the electromagnetic influence of the filters 32 and 33 on the configuration of the first high-frequency module 6.

[0076] (4) Modifications A description will be given of modifications of the second embodiment. In the following description, the description of the same configuration as the second embodiment will be omitted, and the description will focus on the configuration that is different from the second embodiment.

[0077] (4-1) Modification 1 (4-1-1) Configuration As shown in Fig. 5, in Modification 1, the GSM antenna and the NTN antenna in Embodiment 2 are configured as separate antennas 3 and 4. That is, the external terminal 30a of the second high-frequency module 7 is connected to the antenna 4. The external terminal 10a of the first high-frequency module 6 is connected to the antenna 3. In Modification 1, the external terminal 10d of the first high-frequency module 6 is omitted.

[0078] (4-1-2) Effects In the high-frequency system 1 according to the first modification, the filters 32 and 33 (first filters) are connected to the antenna 4 (first antenna) via the external terminal 30a (first antenna terminal). The filter 15 (second filter) is connected to the antenna 3 (second antenna) via the external terminal 30a (second antenna terminal). The external terminal 30a is separate from the external terminal 10a. The antenna 3 is separate from the antenna 4. According to this configuration, the antenna 4 (antenna for NTN) connected to the external terminal 30a and the antenna 3 (antenna for GSM) connected to the external terminal 10a are separate from each other, so that it is possible to prevent the radio waves of the transmission signal transmitted from the antenna 4 from affecting the antenna 3.

[0079] Third Embodiment A high frequency system 1 according to a third embodiment will be described with reference to Fig. 6. In the following description, the same configuration as in the second embodiment will be omitted, and the description will focus on the configuration different from the second embodiment.

[0080] (1) Configuration As shown in Fig. 6, the third embodiment has the same configuration as the second embodiment, except that the filter 15 of the first high-frequency module 6 is relocated to the second high-frequency module 7. The third embodiment will be described in detail below.

[0081] The first high-frequency module 6 of the third embodiment has the same configuration as the first high-frequency module 6 of the second embodiment, except that the filter 15 and the path between the selection terminal 11c of the switch 11 and the selection terminal 14c of the switch 14 are omitted. Note that a filter having a pass band different from the pass bands of the filters 32, 33 and the filter 15 may be connected between the selection terminal 11c of the switch 11 and the selection terminal 14c of the switch 14.

[0082] The second high-frequency module 7 of the third embodiment has the same configuration as the second high-frequency module 7 of the second embodiment, except that a filter 15 is further provided.

[0083] In the second high-frequency module 7 of the third embodiment, the switch 31 has the same configuration as the switch 31 of the second embodiment, except that it further includes a selection terminal 31d. In the switch 31 of the third embodiment, the selection terminal 31d is connected to the output section 15b of the filter 15. The selection terminal 31d is connected to a selection terminal 34d (described below) of the switch 34 via the filter 15. In the third embodiment, the common terminal 31a of the switch 31 can be selectively connected to at least one of the multiple selection terminals 31b to 31d.

[0084] In the second high-frequency module 7 of the third embodiment, the switch 34 has the same configuration as the switch 34 of the second embodiment, except that it further includes a selection terminal 34d. In the switch 34 of the third embodiment, the selection terminal 34d is connected to the input section 15a of the filter 15. The selection terminal 34d is connected to the selection terminal 31d of the switch 31 via the filter 15. In the third embodiment, the common terminal 34a of the switch 34 can be selectively connected to at least one of the multiple selection terminals 34b to 34d.

[0085] In the third embodiment, the switch 11 (second selection switch) of the first high-frequency module 6 and the switch 34 (first selection switch) of the second high-frequency module 7 constitute a switch 71 (first switch) that selects a connection destination for the output section 13b of the power amplifier 13 from among a plurality of filters (including filters 32, 33, and filter 15). The switch 34 selects one filter from among the filters 32, 33, and filter 15. The switch 11 selects a connection destination for the output section 13b of the power amplifier 13 from among a plurality of filters (the one filter selected by the switch 34 and the other filter).

[0086] In the third embodiment, the switch 14 of the first high-frequency module 6 and the switch 31 of the second high-frequency module 7 constitute a switch 72 (second switch) that selects a connection destination of the external terminal 10a from among a plurality of filters (including filters 32, 33, and filter 15). The switch 31 selects one filter from among the plurality of filters (filters 32, 33, and filter 15). The switch 14 selects a connection destination of the external terminal 10a from among a plurality of filters (the one filter selected by the switch 31 and the other filter).

[0087] (2) Operation The operation of the high-frequency system 1 according to the third embodiment will be described with reference to FIG. 6 . First, the operation when transmitting a transmission signal in the GSM communication band will be described. In this case, in the switch 11, the common terminal 11a is connected to the selection terminal 11b. In the switch 14, the common terminal 14a is connected to the selection terminal 14b. In the switch 31, the common terminal 31a is connected to the selection terminal 31d. In the switch 34, the common terminal 34a is connected to the selection terminal 34d. A transmission signal in the GSM communication band is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the switch 11, the external terminal 10c, the external terminal 30b, the switch 34, the filter 15, the switch 31, the external terminal 30a, the external terminal 10c, the switch 14, and the external terminal 10a, and is transmitted from the antenna 3.

[0088] Next, an operation when transmitting a transmission signal in an NTN communication band (e.g., n255Tx) will be described. In this case, in the switch 11, the common terminal 11a is connected to the selection terminal 11b. In the switch 14, the common terminal 14a is connected to the selection terminal 14b. In the switch 31, the common terminal 31a is connected to the selection terminal 31b. In the switch 34, the common terminal 34a is connected to the selection terminal 34b. An n255Tx signal (transmission signal) is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10b, the power amplifier 13, the switch 11, the external terminal 10c, the external terminal 30b, the switch 34, the filter 32, the switch 31, the external terminal 30a, the external terminal 10d, the switch 14, and the external terminal 10a, and is transmitted from the antenna 3.

[0089] (3) Effects The high frequency system 1 according to the third embodiment has the same configuration as the second embodiment and has the same effects as the second embodiment.

[0090] The high-frequency system 1 according to the third embodiment also includes a first high-frequency module 6 and a second high-frequency module 7, which are separate from each other. The first high-frequency module 6 includes a power amplifier 13. The second high-frequency module 7 includes filters 32 and 33 (first filters) and a filter 15 (second filter). The switch 70 (first switch) includes a switch 34 (first selection switch) and a switch 11 (second selection switch). The switch 34 is included in the second high-frequency module 7 and selects one filter from the filters 32 and 33 and the filter 15. The switch 11 is included in the first high-frequency module 6 and selects the connection destination of the output section 13b of the power amplifier 13 from a plurality of filters, including the one filter.

[0091] According to this configuration, the filters 32, 33, and the filter 15 can be configured as separate modules separated from the configuration including the power amplifier 13 (first high-frequency module 6). This allows the filters 32, 33, and the filter 15 to be easily added later to the high-frequency system 1. Furthermore, the filters 32, 33, and the filter 15 can be physically isolated from the configuration including the power amplifier 13 (first high-frequency module 6). This reduces the electromagnetic influence of the filters 32, 33, and the filter 15 on the configuration of the first high-frequency module 6.

[0092] Fourth Embodiment A high-frequency system 1 according to a fourth embodiment will be described with reference to Fig. 7. In the following description, the same configuration as in the third embodiment will be omitted, and the description will focus on the configuration different from the third embodiment.

[0093] (1) Configuration As shown in Fig. 7, the fourth embodiment has the same configuration as the third embodiment, except that the first high-frequency module 6 further includes a shared filter 12. The fourth embodiment will be described in detail below.

[0094] The shared filter 12 has a configuration similar to that of the shared filter 12 of embodiment 1. The shared filter 12 is connected between the output section 13b of the power amplifier 13 and the common terminal 11a of the switch 11. The shared filter 12 has an input section 12a and an output section 12b. The shared filter 12 receives a signal (transmission signal) from the input section 12a, cuts out high-frequency components of the input signal, and outputs the signal with the high-frequency components cut out from the output section 12b.

[0095] (2) Effects The high frequency system 1 according to the fourth embodiment has the same configuration as the third embodiment and has the same effects as the third embodiment.

[0096] The high-frequency system 1 according to the fourth embodiment further includes a shared filter 12. The shared filter 12 is provided between the power amplifier 13 and the switch 11 (first switch) and cuts high-frequency components of a transmission signal in the NTN communication band (first transmission signal) and a transmission signal in the GSM communication band (second transmission signal). With this configuration, the shared filter 12 is shared by both the NTN and GSM systems, which allows for a reduction in weight and an improvement in design flexibility of the filters 32 and 33, which are NTN filters.

[0097] Fifth Embodiment A high-frequency system 1 according to a fifth embodiment will be described with reference to Fig. 8. In the following description, the same configuration as in the second embodiment will be omitted, and the description will focus on the configuration different from the second embodiment.

[0098] (1) Configuration As shown in Fig. 8, the fifth embodiment has the same configuration as the second embodiment (see Fig. 4), except that the common terminal 31a of the switch 31 is connected to the external terminal 10a, rather than to the multiple selection terminals 14b to 14c of the switch 14. The fifth embodiment will be described in detail below.

[0099] The second high-frequency module 7 of the fifth embodiment has the same configuration as the second high-frequency module 7 of the second embodiment.

[0100] The first high-frequency module 6 of the fifth embodiment is configured in the same manner as the first high-frequency module 6 of the second embodiment, except that the external terminal 10c (see FIG. 4) is omitted and the external terminal 10a is connected to the external terminal 30a of the second high-frequency module 7 via a path L10.

[0101] In the fifth embodiment, the external terminal 10a of the first high-frequency module 6 is connected to the external terminal 30a of the second high-frequency module 7 via a path L10. That is, the output section of one filter (filters 32 and 33) selected by the switch 31 is connected to the external terminal 10a without going through the switch 14.

[0102] Furthermore, in the fifth embodiment, the multiple selection terminals 14b to 14d of the switch 14 (second switch) include the selection terminal 14c connected to the output section 15b of the filter 15. However, the multiple selection terminals 14b to 14d of the switch 14 (second switch) do not include the selection terminal connected to the common terminal 31a of the switch 31 of the second high-frequency module 7 (i.e., the selection terminal connected to the output sections of the filters 32 and 33). That is, the switch 14 selects the connection destination of the external terminal 10a from among the multiple filters (including the filter 15 but excluding the filters 32 and 33). Therefore, the switch 14 can prevent the output signal of the filter 15 (i.e., the transmission signal in the GSM communication band) from leaking from the selection terminal 14c connected to the filter 15 to the selection terminals connected to the filters 32 and 33. As a result, a decrease in the output level of the output signal of the filter 15 can be prevented.

[0103] (2) Effects The high frequency system 1 according to the fifth embodiment has the same configuration as the second embodiment and has the same effects as the second embodiment.

[0104] The high-frequency system 1 according to the fifth embodiment further includes a switch 14 (second switch). The switch 14 selects a connection destination of the external terminal 10a (antenna terminal) from among a plurality of filters, including the filter 15 (second filter) and excluding the filters 32 and 33 (first filters). The output sections 32b and 33b of the filters 32 and 33 (first filters) are connected to the external terminal 10a without going through the switch 14.

[0105] With this configuration, the external terminal 10a is shared by both NTN and GSM, which contributes to the miniaturization of the high-frequency system 1. Furthermore, the switch 14 selects the connection destination of the external terminal 10a from among a plurality of filters that include the filter 15 but do not include the filters 32 and 33, so the switch 14 can prevent the output signal of the filter 15 from leaking to the filters 32 and 33, thereby preventing a decrease in the output level of the output signal of the filter 15.

[0106] Sixth Embodiment A high-frequency system 1 according to a sixth embodiment will be described with reference to Fig. 9. In the following description, the same configuration as in the second embodiment will be omitted, and the description will focus on the configuration different from the second embodiment.

[0107] (1) Configuration The sixth embodiment differs from the second embodiment in that it further includes a receiving filter for NTN (filter 41), that it includes a common high-frequency module 40, and that it further includes an antenna 4 dedicated to NTN transmission. The sixth embodiment also differs from the second embodiment in that it assumes a case in which one transmitting filter for NTN is included, and the switches 31 and 34 are omitted. Other than the above, the configuration of the sixth embodiment is the same as that of the high-frequency system 1 according to the second embodiment. The high-frequency system 1 and the communication device 100 according to the sixth embodiment will be described in detail below.

[0108] 9, the communication device 100 according to the sixth embodiment includes antennas 3 and 4. Also, as shown in FIG. 9, the high-frequency system 1 according to the sixth embodiment includes a high-frequency module 40.

[0109] The high-frequency module 40 includes a plurality of external terminals 10e to 10i and a plurality of electronic components, including switches 11 and 14, a shared filter 12, filters 15, 41, and 42, a power amplifier 13, and a low-noise amplifier 44.

[0110] The external terminals 10e and 10f are antenna terminals to which the antennas 3 and 4 are respectively connected. The external terminal 10g is connected to an output section (not shown) of the signal processing circuit 2 and is an input terminal for inputting a transmission signal processed by the signal processing circuit 2 to the high-frequency system 1. The external terminal 10h is connected to an input section (not shown) of the signal processing circuit 2 and is an output terminal for outputting a reception signal processed by the high-frequency module 40 to the signal processing circuit 2.

[0111] The switch 11 is, for example, a band select switch. The switch 11 selects the connection destination of the output section 12b of the shared filter 12 from among a plurality of filters (a filter 41 (first filter) connected to the external terminal 10f, a filter 15 (second filter) provided on a path L4 described later, and other filters described later). The switch 11 is configured similarly to the switch 11 of the second embodiment. The switch 11 has a common terminal 11a and a plurality of selection terminals 11b to 11d (three in the example of FIG. 9 ). The common terminal 11a is connected to the output section 12b of the shared filter 12. The selection terminal 11b is connected to the external terminal 10f via the filter 41. The selection terminal 11c is connected to a selection terminal 14b of the switch 14 via a path L11. A filter 15 is provided on the path L11. The selection terminal 11d is connected to a selection terminal 14c of the switch 14 via another filter (not shown). The other filters are the same as the other filters of the second embodiment.

[0112] The switch 14 is, for example, an antenna switch. The switch 14 selects the connection destination of the external terminal 10e from among a plurality of filters (the filter 15 provided on the path L11, the filter 42 (receiving filter), and the other filters). The switch 14 is configured in the same manner as the switch 14 of the second embodiment. The switch 14 has a common terminal 14a and a plurality of (four in the example of FIG. 9 ) selection terminals 14b to 14d. The common terminal 14a is connected to the external terminal 10e. The selection terminal 14b is connected to the selection terminal 11c of the switch 11 via the path L11. The filter 15 is provided on the path L11. The selection terminal 14c is connected to the selection terminal 14d of the switch 14 via the other filters. The selection terminal 14d is connected to an input unit 42a of the filter 42, which will be described later.

[0113] The shared filter 12 is a low-pass filter that cuts high-frequency components of the transmission signals in the NTN communication band and the GSM communication band. The shared filter 12 has the same configuration as the shared filter 12 in embodiment 1. The input section 12a of the shared filter 12 is connected to the output section 13b of the power amplifier 13. The output section 12b of the shared filter 12 is connected to the common terminal 11a of the switch 11.

[0114] The filter 15 is a low-pass filter for further cutting high-frequency components of the transmission signal in the GSM communication band, from which high-frequency components have been cut by the shared filter 12. The filter 15 has the same configuration as the filter 15 of the second embodiment. The input section 15a of the filter 15 is connected to the selection terminal 11c of the switch 11. The output section 15b of the filter 15 is connected to the selection terminal 14b of the switch 14.

[0115] The filter 41 is a transmission filter having a passband that includes the transmission band of the NTN communication band. The transmission band of the NTN communication band is, for example, the n255 transmission band or the n256 transmission band. Hereinafter, the n255 transmission band may be referred to as n255Tx, and the n256 transmission band may be referred to as 256Tx. The filter 41 is connected between the selection terminal 11b of the switch 11 and the external terminal 10f. The filter 41 has an input unit 41a and an output unit 41b. The input unit 41a is connected to the selection terminal 11b of the switch 11. The output unit 41b is connected to the external terminal 10f. The filter 41 receives a signal (transmission signal) from the input unit 41a, restricts the input signal to a signal within the transmission band (n255Tx or n256Tx) of the communication band, passes the restricted signal, and outputs the passed signal from the output unit 41b.

[0116] The filter 42 is a receiving filter having a passband that includes the receiving band of the NTN communication band. The receiving band of the NTN communication band is, for example, the n255 receiving band or the n256 receiving band. Hereinafter, the n255 receiving band may be referred to as n255Rx, and the n256 receiving band may be referred to as n256Rx. The filter 42 is connected between the selection terminal 14d of the switch 14 and the input 43a of the low-noise amplifier 43. The filter 42 has an input 42a and an output 42b. The input 42a is connected to the selection terminal 14d of the switch 14. The output 42b is connected to the input 43a of the low-noise amplifier 43. The filter 42 receives a signal (received signal) from the input 42a, restricts the input signal to the NTN communication band (e.g., n255Rx), passes the restricted signal, and outputs the passed signal from the output 42b.

[0117] The power amplifier 13 amplifies a signal (transmission signal) input from the signal processing circuit 2 to the high frequency system 1 via the external terminal 10g. The power amplifier 13 is configured similarly to the power amplifier 13 of the second embodiment. Like the power amplifier 13 of the second embodiment, the power amplifier 13 amplifies a transmission signal in the GSM communication band and a transmission signal in the NTN communication band.

[0118] The power amplifier 13 is connected between the external terminal 10g and the shared filter 12. The power amplifier 13 has an input section 13a and an output section 13b. The input section 13a is connected to the external terminal 10g. The output section 13b is connected to the input section 12a of the shared filter 12. The power amplifier 13 amplifies the signal (transmission signal) input to the input section 13a and outputs the amplified signal from the output section 13b.

[0119] The low-noise amplifier 43 amplifies the output signal of the filter 42 (i.e., the received signal in the NTN communication band). The low-noise amplifier 43 is connected between the external terminal 10g and the filter 42. The low-noise amplifier 43 has an input section 43a and an output section 43b. The input section 43a is connected to the output section 42b of the filter 42. The output section 43b is connected to the external terminal 10h. The low-noise amplifier 43 amplifies the signal (received signal) input to the input section 43a and outputs the amplified signal from the output section 43b.

[0120] (2) Transmission Path for NTN and Reception Path for NTN The high frequency module 40 has a transmission path 50 for NTN and a reception path 51 for NTN.

[0121] The transmission path 50 for NTN is a path along which a transmission signal for NTN passes, and is a path from the external terminal 10g to the antenna 4. More specifically, the transmission path 50 for NTN is a path that passes through the external terminal 10g, the power amplifier 13, the shared filter 12, the switch 11, the filter 41, and the external terminal 10f in this order, and then reaches the antenna 4.

[0122] The NTN reception path 51 is a path through which an NTN reception signal passes, and is a path from the antenna 3 to the external terminal 10h. More specifically, the NTN reception path 51 is a path that passes through the antenna 3, the switch 14, the filter 42, and the low-noise amplifier 43 and reaches the external terminal 10h.

[0123] In this way, the transmission path 50 for NTN and the reception path 51 for NTN are configured to be separated from each other so as not to be bundled by the switches 11, 14. Therefore, the transmission signal in the communication band for NTN is prevented from leaking to the reception path 51 for NTN. As a result, it is possible to prevent loss of the transmission signal in the communication band for NTN due to the transmission signal in the communication band for NTN leaking to the reception path 51 for NTN.

[0124] (3) Operation The operation of the high frequency system 1 according to the sixth embodiment will be described with reference to Fig. 9. The operation will be described when transmitting a transmission signal in the GSM communication band. In this case, the common terminal 11a of the switch 11 is connected to the selection terminal 11c. Furthermore, the common terminal 14a of the switch 14 is connected to the selection terminal 14b. Then, a transmission signal in the GSM communication band is input from the signal processing circuit 2 to the external terminal 10g. The input transmission signal passes through the external terminal 10g, the power amplifier 13, the shared filter 12, the switch 11, the filter 15, the switch 14, and the external terminal 10e, and is transmitted from the antenna 3.

[0125] Next, the operation when transmitting a transmission signal in the NTN communication band (e.g., n255Tx) will be described. In this case, the common terminal 11a of the switch 11 is connected to the selection terminal 11b. Then, a transmission signal in the NTN communication band is input from the signal processing circuit 2 to the external terminal 10b. The input transmission signal passes through the external terminal 10g, power amplifier 13, shared filter 12, switch 11, filter 41, and external terminal 10f, and is transmitted from the antenna 4.

[0126] Next, the operation when receiving a signal in the NTN communication band (e.g., n255Rx) will be described. In this case, the common terminal 14a of the switch 14 is connected to the selection terminal 14d. When a signal in the NTN communication band is received by the antenna 3, the received signal passes from the antenna 3 through the switch 14, the filter 42, the low-noise amplifier 43, and the external terminal 10h, and is output to the signal processing circuit 2.

[0127] (4) Effects The high-frequency system 1 according to the sixth embodiment includes a power amplifier 13, a shared filter 12, a filter 41 (first filter), a switch 11 (first switch), a filter 42 (receiving filter), and a switch 14 (second switch). The power amplifier 13 amplifies a transmission signal (first transmission signal) in the NTN communication band and a transmission signal (second transmission signal) in the GSM communication band. The shared filter 12 is connected to the output section 13b of the power amplifier 13 and cuts high-frequency components of the first transmission signal and the second transmission signal. The filter 41 has a pass band that includes the transmission band of the NTN communication band. The switch 11 selects the connection destination of the output section 12b of the shared filter 12 from the filter 41 connected to the external terminal 10f (first antenna terminal) and the path L11. The filter 42 has a pass band that includes the reception band of the NTN communication band. The switch 14 selects a connection destination for the second antenna terminal 10e from at least the receiving filter 42 and the path L11. The external terminals 10f and 10e are connected to the antennas 4 and 3, respectively.

[0128] According to this configuration, the NTN transmission path 50 and the NTN reception path 51 can be separated from each other by not passing through the same switch, which prevents the transmission signal in the NTN communication band from leaking to the NTN reception path 51 and reducing the signal level of the transmission signal in the NTN communication band.

[0129] Moreover, the high-frequency system 1 according to the sixth embodiment further includes a filter 15 (second filter). The filter 15 is provided on the path L11 and further cuts high-frequency components of the second transmission signal (the transmission signal in the GSM communication band) from which the high-frequency components have been cut by the shared filter 12. With this configuration, the filter 15 can cut the high-frequency components of the second transmission signal by an optimal amount.

[0130] (5) Modifications A description will be given of modifications of the sixth embodiment. In the following description, the description of the same configuration as the sixth embodiment will be omitted, and the description will focus on the configuration different from the sixth embodiment.

[0131] (5-1) Modification 1 In the sixth embodiment, the filter 15 may be omitted. In this case, the path L11 connecting the selection terminal 11c of the switch 11 and the selection terminal 14b of the switch 14 is a path without a filter, and serves as a bypass path for passing the GSM transmission signal from the selection terminal 14b of the switch 14 to the selection terminal 11b of the switch 11. In this case, the high-frequency components of the transmission signal in the GSM communication band are cut by a single-stage filter made of a common filter. The first modification also achieves the same effects as the sixth embodiment.

[0132] Seventh Embodiment A high-frequency system 1 according to a seventh embodiment will be described with reference to Fig. 10. In the following description, the same configuration as in the sixth embodiment will be omitted, and the description will focus on the configuration different from the sixth embodiment.

[0133] (1) Configuration In the seventh embodiment, an example of the arrangement of a plurality of electronic components on a mounting board in the high-frequency module 40 according to the sixth embodiment will be described.

[0134] As shown in FIG. 10, the high-frequency module 40 according to the seventh embodiment further includes a controller 60, electromagnetic shielding walls 61A and 61B, a mounting substrate 62, a resin layer 63, and a shield electrode 64 in addition to the configuration of the high-frequency module 40 according to the sixth embodiment (the above-described plurality of electronic components and the plurality of external terminals 10e to 10h).

[0135] The plurality of electronic components include a switch 11 , a shared filter 12 , a power amplifier 13 , a switch 14 , a filter 15 , a filter 42 and a low-noise amplifier 43 .

[0136] The controller 60 controls the power amplifier 13 in accordance with control from the signal processing circuit 2. The controller 60 is connected to a signal output unit (not shown) of the signal processing circuit 2, and controls the power amplifier 13 based on a control signal from the signal output unit.

[0137] The electromagnetic shielding walls 61A and 61B are walls that block electromagnetic waves (noise) propagating between the power amplifier 13 and other electronic components. The electromagnetic shielding walls 61A and 61B are made of metal. The electromagnetic shielding walls 61A and 61B are electrically connected to a ground layer (not shown) of the mounting board 62. As will be described later, the electromagnetic shielding walls 61A and 61B are arranged around the power amplifier 13 and block electromagnetic waves propagating between the power amplifier 13 and other electronic components.

[0138] The mounting substrate 62 is a substrate on which the plurality of electronic components are arranged (mounted). The mounting substrate 62 has, for example, a rectangular flat plate shape when viewed from the thickness direction of the mounting substrate 62 (the direction perpendicular to the plane of the paper in FIG. 9 ). The mounting substrate 62 has a first main surface 62a and a second main surface 62b. The first main surface 62a and the second main surface 62b are main surfaces that face each other in the thickness direction of the mounting substrate 62. The plurality of electronic components are arranged on the first main surface 62a of the mounting substrate 62. The plurality of external terminals 10e to 10h are arranged on the second main surface 62b of the mounting substrate 62.

[0139] The resin layer 63 is made of an electrically insulating resin material and is provided on the first main surface 62 a of the mounting substrate 62 so as to cover the electronic components.

[0140] The shield electrode 64 shields electromagnetic waves (noise) propagating between the inside (the plurality of electronic components) and the outside of the high-frequency module 40. The shield electrode 64 is made of metal and is provided on the outer surface of the resin layer 63 so as to cover the outer surface (top surface and outer peripheral surface) of the resin layer 63.

[0141] (2) Arrangement of the Multiple Electronic Components The arrangement of the multiple electronic components on the first main surface 62a of the mounting substrate 62 will be described with reference to FIG.

[0142] The first main surface 62a of the mounting substrate 62 has two long sides 62d, 62e and two short sides 62f, 62g. The two long sides 62d, 62e are sides parallel to the longitudinal direction of the first main surface 62a. The two short sides 62f, 62g are sides parallel to the lateral direction of the first main surface 62a. In the example of Fig. 10, the short side 62g is the left short side, and the short side 62f is the right short side.

[0143] The first main surface 62a has a central region 62M, a first half region 62L, and a second half region 62R. The first half region 62L and the second half region 62R are regions on both sides of the first main surface 62a in the longitudinal direction. In the example of Fig. 10, the first half region 62L is the region on the left side of the first main surface 62a, and the second half region 62R is the region on the right side of the first main surface 62a. The central region 62M is the region between the first half region 62L and the second half region 62R, and is the region in the center of the first main surface 62a in the longitudinal direction.

[0144] The shared filter 12 and the filters 15, 41, 42 are arranged in a central region 62M of the first main surface 62a. More specifically, the shared filter 12 and the filters 15, 41, 42 are arranged side by side in the vertical and horizontal directions.

[0145] The switch 14 and the low-noise amplifier 43 are arranged side by side along the short side 62g in the first side region 62L of the first main surface 62a.

[0146] The power amplifier 13, switch 11, and controller 60 are arranged in a second half region 62R of the first main surface 62a. More specifically, the power amplifier 13 is arranged in a corner 62c of the first main surface 62a. The corner 62c is a corner formed by adjacent long sides 62e and short sides 62f of the first main surface 62a. The power amplifier 13 is arranged, for example, on the same side as the switch 14 in the short-side direction of the first main surface 62a. The power amplifier 13 is rectangular in plan view from the thickness direction of the mounting board 62. The power amplifier 13 has four side surfaces 13p, 13q, 13r, and 13s. The side surfaces 13p and 13r face each other in the short-side direction of the first main surface 62a. The side surfaces 13s and 13q face each other in the longitudinal direction of the first main surface 62a. The two adjacent side surfaces 13g, 13r are adjacent to and face the outer peripheral surface of the shield electrode 64 (more specifically, two adjacent side surfaces 64e, 64f of the four side surfaces that make up the outer peripheral surface).

[0147] Note that "A is adjacent to and facing B" means that A and B face each other with no other electronic components or members present between them, and A and B may or may not be in contact with each other.

[0148] The switch 11 and the controller 60 are arranged on the opposite side of the first main surface 62a from the power amplifier 13 in the short direction of the first main surface 62a. The switch 11 and the controller 60 are arranged side by side in the long direction of the first main surface 62a, for example.

[0149] The electromagnetic shielding wall 61A is disposed adjacent to and facing the side surface 13p of the power amplifier 13. That is, the electromagnetic shielding wall 61A is disposed between the power amplifier 13 and the switch 11 and controller 60. The electromagnetic shielding wall 61A is disposed across both ends of the side surface 13p of the power amplifier 13 in the longitudinal direction of the first main surface 62a. The electromagnetic shielding wall 61B is disposed adjacent to and facing the side surface 13s of the power amplifier 13. Therefore, the electromagnetic shielding wall 61B is disposed between the power amplifier 13 and the central region 62M. The electromagnetic shielding wall 61B is disposed across both ends of the side surface 13s of the power amplifier 13 in the lateral direction of the first main surface 62a. The power amplifier 13 is electromagnetically insulated from the electronic components around the power amplifier 13 (the switch 11, the controller 60, and the shared filter 12) by the electromagnetic shielding walls 61A and 61B.

[0150] (3) Arrangement of the Multiple External Terminals The arrangement of the multiple external terminals 10g to 10h on the second main surface 62b of the mounting substrate 62 will be described with reference to FIG.

[0151] The periphery of the second main surface 62b of the mounting substrate 62 has a first region R1, a second region R2, a third region, and a fourth region R4.

[0152] The first region R1 is a region of the periphery of the second main surface 62b of the mounting board 62 that is adjacent to the short side 62f of the first main surface 62a in a plan view from the thickness direction of the mounting board 62 and overlaps with the power amplifier 13 in the thickness direction of the mounting board 62. The second region R2 is a region of the periphery of the second main surface 62b of the mounting board 62 that is adjacent to the long side 62e of the first main surface 62a in a plan view from the thickness direction of the mounting board 62 and overlaps with the power amplifier 13 in the thickness direction of the mounting board 62. The third region R3 is a region of the periphery of the second main surface 62b of the mounting board 62 that is adjacent to the short side 62g and the long side 62d of the first main surface 62a in a plan view from the thickness direction of the mounting board 62 and overlaps with the low-noise amplifier 43 in the thickness direction of the mounting board 62. The fourth region R4 is a region on the periphery of the second main surface 62b of the mounting substrate 62, adjacent to the short side 62g and long side 62e of the first main surface 62a, when viewed in a plane from the thickness direction of the mounting substrate 62, and overlapping with the switch 14 in the thickness direction of the mounting substrate 62.

[0153] The external terminal 10g is an input terminal connected to the input section of the power amplifier 13. The external terminal 10g is disposed at a predetermined position (e.g., the center of the first region R1 in the longitudinal direction) in the first region R1 of the second main surface 62b of the mounting substrate 62. The external terminal 10g is connected to a path connected to the output section of the signal processing circuit 2 (i.e., a path drawn out to the outside of the high-frequency module 40).

[0154] The external terminal 10f is an antenna terminal connected to the antenna 4. The external terminal 10f is disposed at a predetermined position (e.g., the center of the second region R2 in the longitudinal direction) in the second region R2 of the second main surface 62b of the mounting substrate 62. The external terminal 10f is connected to a path connected to the antenna 4 (i.e., a path drawn out to the outside of the high-frequency module 40).

[0155] The external terminal 10h is an output terminal connected to the output section 43b of the low-noise amplifier 43. The external terminal 10h is disposed at a predetermined position in the third region R3 of the second main surface 62b of the mounting substrate 62. In the example of Fig. 10, the external terminal 10h is disposed, for example, in the center of a region of the third region R3 that is adjacent to the short side 62g of the first main surface 62a in a plan view from the thickness direction of the mounting substrate 62.

[0156] The external terminal 10e is an antenna terminal connected to the antenna 3. The external terminal 10e is disposed at a predetermined position in a fourth region R4 of the second main surface 62b of the mounting substrate 62. In the example of Fig. 10, the external terminal 10e is disposed, for example, in the center of a region of the fourth region R4 that is adjacent to the short side 62g of the first main surface 62a in a plan view from the thickness direction of the mounting substrate 62.

[0157] (4) Heat Dissipation Path of Power Amplifier Heat generated in the power amplifier 13 is transferred to the external terminals 10g and 10f located directly below the power amplifier 13. The heat transferred to the external terminal 10g is transferred through a path connecting the external terminal 10g and an output section (not shown) of the signal processing circuit 2 to the outside of the high-frequency module 40 and is then dissipated. The heat transferred to the external terminal 10f is transferred through a path connecting the external terminal 10f and the antenna 4 to the outside of the high-frequency module 40 and is then dissipated.

[0158] (5) Effects The high-frequency system 1 according to the seventh embodiment includes a mounting substrate 62 and an external terminal 10g (input terminal). The mounting substrate 62 has a first main surface 62a and a second main surface 62b that face each other in the thickness direction and has a rectangular shape when viewed in the thickness direction. The external terminal 10g is connected to an input section 13a of the power amplifier 13. The power amplifier 13 is disposed at a corner 62c of the first main surface 62a of the mounting substrate 62. The second main surface 62b has a short side 62f (first outer side) and a long side 62e (second outer side) that constitute the corner 62c. The external terminal 10g is disposed in a first region R1 of the periphery of the second main surface 62b, adjacent to the short side 62f and overlapping with the power amplifier 13 in the thickness direction. The external terminal 10f (first antenna terminal) is arranged in a second region R2 on the periphery of the second main surface 62b, adjacent to the long side 62e and overlapping with the power amplifier 13 in the thickness direction.

[0159] According to this configuration, the power amplifier 13 is disposed at a corner 62c of the mounting substrate 62, and the external terminals 10g and 10f of the power amplifier 13 are disposed in a region (first region R1 or second region R2) of the periphery of the second main surface 62b that is adjacent to the short side 62f or the long side 62e and overlaps with the power amplifier 13 in the thickness direction. This makes it easier for heat generated by the power amplifier 13 to be dissipated to the outside from the external terminals 10g and 10f of the power amplifier 13. As a result, heat generation by the power amplifier 13 can be more effectively suppressed.

[0160] Although the first to seventh embodiments and their modifications have been described above, the first to seventh embodiments and their modifications may be implemented in combination.

[0161] (Aspects) The present specification discloses the following aspects.

[0162] A high-frequency system (1) of a first aspect includes a power amplifier (13), a shared filter (12), first filters (32, 33), and a first switch (11). The power amplifier (13) amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band. The shared filter (12) is connected to an output section (13b) of the power amplifier (13) and cuts high-frequency components of the first transmission signal and the second transmission signal. The first filters (32, 33) have a passband that includes the transmission band of the NTN communication band. The first switch (11) selects a connection destination of the output section (12b) of the shared filter (12) from among the first filters (32, 33) connected to the first antenna terminal (30a) and the second antenna terminal (10a).

[0163] With this configuration, the power amplifier (13) is shared between the NTN and GSM systems, thereby enabling a reduction in the size of the high-frequency system (1). Also, since the shared filter (12) is shared between the NTN and GSM systems, the function of cutting high-frequency components of the first transmission signal from the first filters (32, 33), which are filters for NTN, can be simplified, thereby enabling a reduction in the weight of the first filters (32, 33) and an improvement in the degree of freedom in design.

[0164] The high-frequency system (1) of the second aspect is the same as that of the first aspect, but includes a low-pass filter (18) and a bypass switch (16). The low-pass filter (18) is provided between the shared filter (12) and the first switch (11) and further cuts high-frequency components of the first transmission signal. The bypass switch (16) is provided in a bypass path (L12) connected in parallel to the low-pass filter (18) and conducts and blocks the bypass path (L12). The bypass switch (16) blocks the bypass path (L12) when the power amplifier (13) amplifies and outputs the first transmission signal, and conducts the bypass path (L12) when the power amplifier (13) amplifies and outputs the second transmission signal.

[0165] According to this configuration, the bypass switch (16) can switch between conducting and blocking the bypass path (L12), thereby enabling and disabling the function of the NTN low-pass filter (18). More specifically, when the power amplifier (13) amplifies and outputs the second transmission signal, the bypass switch (16) can disable the NTN low-pass filter (18), allowing the single-stage filter consisting of the shared filter (12) to appropriately cut high-frequency components of the second transmission signal in accordance with the transmission bandwidth of the GSM communication band. Furthermore, when the power amplifier (13) amplifies and outputs the first transmission signal, the two-stage filter consisting of the shared filter (12) and the low-pass filter (18) can appropriately cut harmonic components of the first transmission signal in accordance with the transmission bandwidth of the NTN communication band. In other words, lower frequencies can be cut compared to when high-frequency components of the second transmission signal are cut.

[0166] The high-frequency system (1) of the third aspect is the same as that of the first or second aspect, and includes a first high-frequency module (6) and a second high-frequency module (7) that are separate from each other. The first high-frequency module (6) includes a power amplifier (13), a shared filter (12), and a first switch (11). The second high-frequency module (7) includes first filters (32, 33).

[0167] According to this configuration, the first filters (32, 33) can be configured as separate modules from the configuration (first high-frequency module (6)) including the power amplifier (13), the shared filter (12), and the first switch (11). This allows the first filters (32, 33) to be easily added to the high-frequency system (1) after installation. Furthermore, the first filters (32, 33) can be insulated and isolated from the configuration including the power amplifier (13), the shared filter (12), and the first switch (11). This reduces the electromagnetic influence of the first filters (32, 33) on the configuration of the first high-frequency module (6).

[0168] In the high-frequency system (1) of the fourth aspect, in any one of the first to third aspects, the first antenna terminal (30a) is connected to the first antenna (4), and the second antenna terminal (10a) is connected to a second antenna (3) separate from the first antenna (4).

[0169] This configuration can prevent the radio waves of the transmission signal (i.e., the transmission signal in the communication band for NTN) transmitted from the first antenna (4) from affecting the second antenna (3) and other electronic components (such as the power amplifier (13) and the shared filter (12)).

[0170] In the high frequency system (1) of the fifth aspect, in any one of the first to third aspects, the first antenna terminal (30a) and the second antenna terminal (10a) are connected to the same antenna (3).

[0171] According to this configuration, the antenna (3) is used in common for NTN transmission and GSM transmission, which contributes to miniaturization of the communication device (100).

[0172] A sixth aspect of the high-frequency system (1) includes a power amplifier (13), a shared filter (12), a first filter (41), a first switch (11), a receiving filter (42), and a second switch (14). The power amplifier (13) amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band. The shared filter (12) is connected to an output section (13b) of the power amplifier (13) and cuts high-frequency components of the first transmission signal and the second transmission signal. The first filter (41) has a passband that includes the transmission band of the NTN communication band. The first switch (11) selects a connection destination of the output section (12b) of the shared filter (12) from among the first filter (41) connected to the first antenna terminal (10f) and the path (L11). The receiving filter (42) has a passband that includes the reception band of the NTN communication band. The second switch (14) selects a connection destination of the second antenna terminal (10e) from at least the receiving filter (42) and the path (L11). The first antenna terminal (10f) and the second antenna terminal (10e) are connected to different antennas (4, 3).

[0173] According to this configuration, the NTN transmission path (50) is a path that passes through the power amplifier (13), the shared filter (12), the first switch (11), the first filter (41), the first antenna terminal (10f), and the antenna (4) in this order. The NTN reception path (51) is a path that passes through another antenna (3), the second switch (14), and the reception filter (42) in this order. Therefore, the NTN transmission path (50) and the NTN reception path (51) can be separated from each other by not passing through the same switch. As a result, it is possible to prevent a transmission signal in the NTN communication band from leaking into the NTN reception path (51), which would otherwise cause a reduction in the signal level of the transmission signal in the NTN communication band.

[0174] The high-frequency system (1) of a seventh aspect is the sixth aspect, further comprising a second filter (15). The second filter (15) is provided on the path (L11) and further cuts high-frequency components of the second transmission signal, the high-frequency components of which have been cut by the shared filter (12).

[0175] According to this configuration, the second filter (15) can cut the high frequency components of the second transmission signal by an optimum amount.

[0176] A high-frequency system (1) of an eighth aspect includes a power amplifier (13), a first filter (32, 33), a second filter (15), and a first switch (11; 70). The power amplifier (13) amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band. The first filter (32, 33) has a passband that includes the transmission band of the NTN communication band. The second filter (15) cuts high-frequency components of the second transmission signal. The first switch (11; 70) selects a connection destination of an output section (13b) of the power amplifier (13) from at least the first filter (32, 33) and the second filter (15).

[0177] According to this configuration, the power amplifier (13) is shared between NTN and GSM, so that the high frequency system (1) can be made smaller.

[0178] The high-frequency system (1) of a ninth aspect is the eighth aspect, further comprising a shared filter (12). The shared filter (12) is provided between the power amplifier (13) and the first switch (11; 70) and cuts high-frequency components of the first transmission signal and the second transmission signal.

[0179] According to this configuration, the shared filter (12) is used in common for both NTN and GSM, so that the first filters (32, 33) which are filters for NTN can be made lighter and the degree of freedom in design can be improved.

[0180] The high-frequency system (1) of a tenth aspect is the eighth or ninth aspect, further comprising a second switch (14; 72). The second switch (14; 72) selects a connection destination of the antenna terminal (10 a) from at least the first filter (32, 33) and the second filter (15).

[0181] According to this configuration, the antenna terminal (10a) is shared by both NTN and GSM, which contributes to miniaturization of the high frequency system (1).

[0182] The high-frequency system (1) of an eleventh aspect is the eighth or ninth aspect, further comprising a second switch (14). The second switch (14) selects a connection destination of the antenna terminal (10a) from among a plurality of filters, including the second filter (15) but not including the first filter (32, 33). The output sections (32b, 33b) of the first filters (32, 33) are connected to the antenna terminal (10a) without going through the second switch (14).

[0183] According to this configuration, the antenna terminal (10 a) is shared by both NTN and GSM, which contributes to the miniaturization of the high-frequency system (1). Furthermore, the second switch (14) selects a connection destination of the antenna terminal (10 a) from among a plurality of filters that include the second filter (15) but do not include the first filter (32, 33), which makes it possible to prevent the output signal of the second filter (15) from leaking to the first filter (32, 33) and thereby suppressing a decrease in the output level of the output signal of the second filter (15) in the second switch (14).

[0184] In the high-frequency system (1) of the twelfth aspect, in the eighth or ninth aspect, the first filter (32, 33) is connected to the first antenna (4) via the first antenna terminal (30a). The second filter (15) is connected to the second antenna (3) via the second antenna terminal (10a). The second antenna terminal (10a) is separate from the first antenna terminal (30a). The second antenna (3) is separate from the first antenna (4).

[0185] According to this configuration, the first antenna (4) connected to the first antenna terminal (30a) and the second antenna (3) connected to the second antenna terminal (10a) are configured separately from each other, so that the radio waves of the transmission signal transmitted from the first antenna (4) can be prevented from affecting the second antenna (3).

[0186] A high-frequency system (1) according to a thirteenth aspect is any one of the eighth to twelfth aspects, and includes a first high-frequency module (6) and a second high-frequency module (7) that are separate from each other. The first high-frequency module (6) includes a power amplifier (13), a first switch (11), and a second filter (15). The second high-frequency module (7) includes first filters (32, 33).

[0187] According to this configuration, the first filters (32, 33) can be configured as separate modules from the configuration (first high-frequency module (6)) including the power amplifier (13), the first switch (11), and the second filter (15). This allows the first filters (32, 33) to be easily added to the high-frequency system (1) after the fact. Furthermore, the first filters (32, 33) can be physically isolated from the configuration (first high-frequency module (6)) including the power amplifier (13), the first switch (11), and the second filter (15). This reduces the electromagnetic influence of the first filters (32, 33) on the configuration of the first high-frequency module (6).

[0188] A high-frequency system (1) according to a fourteenth aspect is any one of the eighth to twelfth aspects, and includes a first high-frequency module (6) and a second high-frequency module (7) that are separate from each other. The first high-frequency module (6) includes a power amplifier (13). The second high-frequency module (7) includes a first filter (32, 33) and a second filter (15). The first switch (70) includes a first selection switch (34) and a second selection switch (11). The first selection switch (34) is included in the second high-frequency module (7) and selects one filter from the first filters (32, 33) and the second filter (15). The second selection switch (11) is included in the first high-frequency module (6) and selects a connection destination of an output section (13b) of the power amplifier (13) from a plurality of filters, including the one filter.

[0189] According to this configuration, the first filter (32, 33) and the second filter (15) can be configured as separate modules separated from the configuration (first high-frequency module (6)) including the power amplifier (13). This allows the first filter (32, 33) and the second filter (15) to be easily added to the high-frequency system (1) after the fact. Furthermore, the first filter (32, 33) and the second filter (15) can be physically isolated from the configuration (first high-frequency module (6)) including the power amplifier (13). This reduces the electromagnetic influence of the first filter (32, 33) and the second filter (15) on the configuration of the first high-frequency module (6).

[0190] A fifteenth aspect of the high-frequency system (1) is the sixth aspect, and includes a mounting board (62) and an input terminal (10g). The mounting board (62) has a first main surface (62a) and a second main surface (62b) facing each other in the thickness direction and has a rectangular shape when viewed in the thickness direction. The input terminal (10g) is connected to an input section (13a) of a power amplifier (13). The power amplifier (13) is disposed at a corner (62c) of the first main surface (62a) of the mounting board (62). The second main surface (62b) has a first outer edge (62f) and a second outer edge (62e) that constitute the corner (62c). The input terminal (10g) is disposed in a first region (R1) of the periphery of the second main surface (62b), adjacent to the first outer edge (62f) and overlapping with the power amplifier (13) in the thickness direction. The first antenna terminal (10f) is arranged in a second region (R2) on the periphery of the second main surface (62b), adjacent to the second outer edge (62e) and overlapping with the power amplifier (13) in the thickness direction.

[0191] According to this configuration, the power amplifier (13) is disposed at a corner (62c) of the mounting board (62), and the input terminal (10g) and the first antenna terminal (10f) (i.e., the antenna terminal for NTN transmission) of the power amplifier (13) are disposed in regions (R1, R2) of the periphery of the second main surface (62b) that are adjacent to the first outer edge (62f) or the second outer edge (62e) and overlap with the power amplifier (13) in the thickness direction. This makes it easier for heat generated in the power amplifier (13) to be dissipated to the outside from the input terminal (10g) and the first antenna terminal (10f) of the power amplifier (13). As a result, heat generation by the power amplifier (13) can be more effectively suppressed.

[0192] A communication device (100) of a 16th aspect includes the high-frequency system (1) of any one of the first to 15th aspects and a signal processing circuit (2). The signal processing circuit (2) is connected to the high-frequency system (1) and processes the high-frequency signal.

[0193] According to this configuration, a communication device (100) having the effects of a high frequency system (1) can be provided.

[0194] REFERENCE SIGNS LIST 1 High frequency system 2 Signal processing circuit 3 Antenna (second antenna) 4 Antenna (first antenna) 6 First high frequency module 7 Second high frequency module 10a External terminal (second antenna terminal) 10b External terminal 10c External terminal 10d External terminal 10e External terminal (second antenna terminal) 10f External terminal (first antenna terminal) 10g External terminal 10g Input terminal 10h External terminal 10i External terminal 11 Switch (first switch, second selection switch) 11a Common terminal 11b to 11d Selection terminal 12 Shared filter 12a Input section 12b Output section 13 Power amplifier 13a Input section 13b Output section 13g to 13s Side surface 14 Switch (second switch) 14a Common terminal 14b to 14d Selection terminal 15 REFERENCE SIGNS LIST Filter (second filter) 15a Input section 15b Output section 16 Switch 17 Matching circuit 18 Low-pass filter 18a Input section 18b Output section 21 RF signal processing circuit 22 Baseband signal processing circuit 30a External terminal (first antenna terminal) 30b External terminal 30c External terminal 31 Switch 31a Common terminal 31b to 31d Selection terminals 32 Filter (first filter) 32a Input section 32b Output section 33 Filter (first filter) 33a Input section 33b Output section 34 Switch (first selection switch) 34a Common terminal 34b to 34d Selection terminals 40 High-frequency module 41 Filter (first filter) 41a Input section 41b Output section 42 Filter (receiving filter) 42a Input section 42b Output section 43 Low-noise amplifier 43a Input section 43b Output section 44 Low-noise amplifier 50 Transmission path 51 Reception path 60 Controller 61A, 61B Electromagnetic shielding wall 61B Electromagnetic shielding wall 62 Mounting substrate 62a First main surface 62b Second main surface 62c Corner portion 62d Long side 62e Long side (second outer side) 62f Short side (first outer side) 62g Short side 62L First half-side region 62M Central region 62R Second half-side region 63 Resin layer 64 Shield electrode 64e,64f Side surface 70 Switch (first switch) 71 Switch 72 Switch 100 Communication device L1 to L11 Route L12 Bypass route R1 First area R2 Second area R3 Third area R4 Fourth area

Claims

1. A high frequency system comprising: a power amplifier that amplifies a first transmission signal in an NTN communication band and a second transmission signal in a GSM communication band; a shared filter connected to the output of the power amplifier and that cuts high frequency components of the first transmission signal and the second transmission signal; a first filter having a passband that includes the transmission band of the NTN communication band; and a first switch that selects whether the output of the shared filter is to be connected to the first filter connected to a first antenna terminal or a second antenna terminal.

2. The high frequency system according to claim 1, further comprising: a low pass filter provided between the shared filter and the first switch for further cutting high frequency components of the first transmission signal; and a bypass switch provided in a bypass path connected in parallel to the low pass filter for connecting and disconnecting the bypass path, wherein the bypass switch disconnects the bypass path when the power amplifier amplifies and outputs the first transmission signal, and connects the bypass path when the power amplifier amplifies and outputs the second transmission signal.

3. The high frequency system according to claim 1 or 2, comprising a first high frequency module and a second high frequency module that are separate from each other, wherein the first high frequency module includes the power amplifier, the shared filter, and the first switch, and the second high frequency module includes the first filter.

4. A high frequency system according to any one of claims 1 to 3, wherein the first antenna terminal is connected to a first antenna, and the second antenna terminal is connected to a second antenna separate from the first antenna.

5. A high frequency system according to any one of claims 1 to 3, wherein the first antenna terminal and the second antenna terminal are connected to the same antenna.

6. A high frequency system comprising: a power amplifier that amplifies a first transmission signal in a communication band for NTN and a second transmission signal in a communication band for GSM; a shared filter connected to the output of the power amplifier and that cuts high frequency components of the first transmission signal and the second transmission signal; a first filter having a pass band that includes the transmission band of the communication band for NTN; a first switch that selects the connection destination of the output of the shared filter from among the first filter connected to a first antenna terminal and a path; a receiving filter having a pass band that includes the reception band of the communication band for NTN; and a second switch that selects the connection destination of a second antenna terminal from at least the receiving filter and the path, wherein the first antenna terminal and the second antenna terminal are connected to different antennas.

7. The high frequency system according to claim 6, further comprising a second filter provided in the path for further cutting high frequency components of the second transmission signal from which high frequency components have been cut by the shared filter.

8. A high frequency system comprising: a power amplifier that amplifies a first transmission signal in a communication band for NTN and a second transmission signal in a communication band for GSM; a first filter having a passband that includes the transmission band of the communication band for NTN; a second filter that cuts high frequency components of the second transmission signal; and a first switch that selects the connection destination of the output section of the power amplifier from at least the first filter and the second filter.

9. The high frequency system according to claim 8, further comprising a shared filter provided between the power amplifier and the first switch, for cutting high frequency components of the first transmission signal and the second transmission signal.

10. The high frequency system according to claim 8 or 9, further comprising a second switch that selects a connection destination of the antenna terminal from at least the first filter and the second filter.

11. The high-frequency system according to claim 8 or 9, further comprising a second switch that selects a connection destination of the antenna terminal from among a plurality of filters that include the second filter but do not include the first filter, and the output section of the first filter is connected to the antenna terminal without going through the second switch.

12. A high-frequency system according to claim 8 or 9, wherein the first filter is connected to a first antenna via a first antenna terminal, and the second filter is connected to a second antenna separate from the first antenna via a second antenna terminal separate from the first antenna terminal.

13. The high frequency system according to any one of claims 8 to 12, comprising a first high frequency module and a second high frequency module that are separate from each other, wherein the first high frequency module includes the power amplifier, the first switch, and the second filter, and the second high frequency module includes the first filter.

14. The high frequency system according to any one of claims 8 to 12, comprising a first high frequency module and a second high frequency module which are separate from each other, wherein the first high frequency module includes the power amplifier, the second high frequency module includes the first filter and the second filter, and the first switch includes: a first selection switch which is included in the second high frequency module and selects one filter from the first filter and the second filter, and a second selection switch which is included in the first high frequency module and selects the connection destination of the output section of the power amplifier from a plurality of filters including the one filter.

15. The high-frequency system according to claim 6, comprising: a mounting board having first and second main surfaces opposing each other in a thickness direction and having a rectangular shape when viewed in the thickness direction; and an input terminal connected to an input section of the power amplifier, wherein the power amplifier is arranged at a corner of the first main surface of the mounting board, the second main surface has first and second outer edges that form the corner, the input terminal is arranged in a first region of the periphery of the second main surface that is adjacent to the first outer edge and overlaps with the power amplifier in the thickness direction, and the first antenna terminal is arranged in a second region of the periphery of the second main surface that is adjacent to the second outer edge and overlaps with the power amplifier in the thickness direction.

16. A communication device comprising: a high-frequency system according to any one of claims 1 to 15; and a signal processing circuit connected to the high-frequency system and configured to process a high-frequency signal.

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