Mask apparatus, mask laminate, frame laminate, method for replacing mask, and method for manufacturing organic device

Abstract

This mask apparatus includes a mask, a frame, and a connection layer that connects the mask and the frame. The mask includes a first layer and a second layer. The first layer contains silicon or a silicon compound. The connection layer includes a release layer. The release layer decomposes, evaporates, or deforms when being irradiated with light.

Description

Mask device, mask stack, frame stack, mask replacement method, and organic device manufacturing method

[0001] SUMMARY Embodiments of the present disclosure relate to a mask apparatus, a mask stack, a frame stack, a mask replacement method, and a method for manufacturing an organic device.

[0002] Vapor deposition is a known method for forming precise patterns. In vapor deposition, a mask with openings is first combined with a substrate. Then, a vapor deposition material is deposited on the substrate through the openings in the mask. As a result, a vapor deposition layer containing the vapor deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels in organic electroluminescence (EL) display devices.

[0003] For example, Patent Document 1 discloses a configuration using a mask device including a frame and a mask joined to the frame under tension, the frame and the mask being made of an iron alloy containing nickel.

[0004] On the other hand, for example, Patent Document 2 proposes that the mask be made of a silicon substrate in order to prevent the mask from being deformed by heat.

[0005] JP 2013-49889 A JP 2009-062565 A

[0006] When a mask using a silicon substrate has openings formed close to its outer edge, the outer edge becomes easily damaged, making the mask difficult to handle. On the other hand, there is a demand for forming openings close to the outer edge of the mask, which allows deposition layers to be formed over a wider area of ​​the substrate with a single mask.

[0007] An embodiment of the present disclosure aims to provide a mask that can effectively solve such problems.

[0008] A mask device according to an embodiment of the present disclosure may include a mask, a frame, and a connecting layer disposed between the mask and the frame and connecting the mask and the frame. The mask may include a first layer including a first surface, a second surface opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a plan view. The mask may also include a second layer including a third surface opposite the second surface, a fourth surface opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view. The first layer may include silicon or a silicon compound. The frame may be connected to the outer edge of the first layer and / or to the first surface of the outer region of the first layer. In a plan view, at least a portion of the frame may extend beyond the outer edge of the first layer. The frame may include glass or metal. The connecting layer may include a release layer. The release layer may be decomposed, evaporated or deformed when irradiated with light.

[0009] Furthermore, a mask stack according to an embodiment of the present disclosure may include a mask and a release layer. The mask may be connected to a frame via the release layer. The mask may include a first layer including a first surface, a second surface opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a planar view. The mask may include a second layer including a third surface opposite the second surface, a fourth surface opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view. The first layer may include silicon or a silicon compound. The release layer may be formed on the outer edge of the first layer and / or on the first surface of the outer region of the first layer, and may be decomposed, evaporated, or deformed by irradiation with light.

[0010] Furthermore, a frame laminate according to an embodiment of the present disclosure may include a frame and a release layer. The frame may be connected to a mask including silicon or a silicon compound via the release layer. The frame may include glass or metal. The release layer may be formed on a surface facing one side and / or a side surface of the frame, and may be decomposed, evaporated, or deformed by irradiation with light.

[0011] Furthermore, a method for replacing a mask in the above-described mask device according to one embodiment of the present disclosure may include an irradiation step of irradiating the peeling layer with light to decompose, evaporate, or deform the peeling layer, a peeling step of peeling the mask from the frame after the irradiation step, a mask preparation step of preparing a new mask, a connection layer formation step of forming a new connection layer on the frame and / or the new mask after the peeling step and the mask preparation step, and a connection step of connecting the frame to the new mask via the new connection layer.

[0012] According to the embodiment of the present disclosure, the mask including the silicon can be prevented from being damaged by gripping the frame, and a new mask device can be produced by replacing a used mask.

[0013] 5B. A cross-sectional view showing an example of an organic device. A diagram showing an example of a vapor deposition apparatus including a mask device. A plan view showing an example of a mask device as viewed from the incident surface side. A plan view showing a modified example of the mask device as viewed from the incident surface side. A plan view showing a modified example of the mask device as viewed from the incident surface side. A plan view showing an example of a mask device as viewed from the exit surface side. A cross-sectional view taken along line V-V of the mask device of FIG. 3A. A diagram showing an enlarged view of a portion surrounded by a two-dot chain line in the cross section shown in FIG. 5A. A cross-sectional view showing an example of an effective area. A cross-sectional view showing an enlarged view of a portion surrounded by a two-dot chain line in the cross section shown in FIG. 5B. A cross-sectional view showing an example of a manufacturing method of a mask device according to an embodiment ... method of replacing a mask in a mask device according to an embodiment. A cross-sectional view corresponding FIG. 18 is a cross-sectional view showing a modified example of the mask device, corresponding to FIG. 6 . FIG. 19 is a plan view of a frame of the mask device shown in FIG. 16 . FIG. 19 is a cross-sectional view showing a modified example of the mask device, corresponding to FIG. ...20 is a cross-sectional view showing a modified example of the mask device, corresponding to FIG. 6 . FIG. 21 is a cross-sectional view illustrating a modified example of the method for forming the second opening. FIG. 22 is a cross-sectional view illustrating a modified example of the method for forming the second opening. FIG. 23 is a diagram showing an example of an apparatus including an organic device. FIG. 24 is a cross-sectional view showing a modified example of the mask device, corresponding to FIG. 6 .

[0014] In this specification and drawings, unless otherwise specified, terms meaning the materials underlying a certain structure, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0015] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0016] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0017] In this specification and drawings, unless otherwise specified, the state in which the surface of element A is "opposed to" the surface of element B includes not only the case in which the surface of element A is in contact with the surface of element B, but also the case in which element C is located between the surfaces of element A and element B. In other words, the term "opposed to" is a term that indicates the orientation of two surfaces.

[0018] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0019] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other examples to the extent that no contradiction occurs. In addition, other examples may also be combined with each other to the extent that no contradiction occurs.

[0020] Unless otherwise specified, in the present specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the range that does not cause a contradiction.

[0021] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes of a display device other than an organic electroluminescence (EL) display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

[0022] A first aspect of the present disclosure is a mask device including: a mask; a frame; and a connection layer disposed between the mask and the frame and connecting the mask and the frame; the mask includes: a first layer including a first surface, a second surface located opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a planar view; and a second layer including a third surface opposite the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view; the first layer includes silicon or a silicon compound; the frame is connected to the outer edge of the first layer and / or the first surface of the outer region of the first layer; and at least a portion of the frame extends to outside the outer edge of the first layer in a planar view; the frame includes glass or metal; and the connection layer includes a release layer. The release layer is a mask device that decomposes, evaporates, or deforms when irradiated with light.

[0023] In the mask device according to the second aspect in accordance with the first aspect described above, the connection layer may further include an adhesive layer.

[0024] In the mask device according to the third aspect in accordance with the second aspect described above, the adhesive layer may contain a glass material, an inorganic material, a metal material, or a resin material.

[0025] In the mask device according to the fourth aspect, which is in accordance with the second aspect or the third aspect, the release layer may be disposed between the adhesive layer and the frame.

[0026] In the mask device according to the fifth aspect, which is in accordance with the second aspect or the third aspect, the release layer may be disposed between the adhesive layer and the mask.

[0027] In a mask device according to a sixth aspect that follows any of the first aspect to the fifth aspect described above, the frame may include a fifth surface facing the same side as the fourth surface, a sixth surface located on the opposite side of the fifth surface, and a third opening that penetrates from the fifth surface to the sixth surface and overlaps with the first opening in a planar view.

[0028] In the mask device according to the seventh aspect, which is in accordance with any one of the first aspect to the sixth aspect described above, the frame may be formed with a stepped portion that accommodates the outer edge of the first layer.

[0029] In the mask device according to the eighth aspect which is in accordance with any one of the first aspect to the seventh aspect described above, a groove may be formed on a surface of the frame which faces the release layer.

[0030] In the mask device according to the ninth aspect, which is in accordance with any one of the first aspect to the eighth aspect described above, the light transmittance in the thickness direction of the portion of the frame that overlaps the peeling layer in a planar view may be 80% or more.

[0031] A tenth aspect of the present disclosure is a mask laminate connected to a frame, comprising: a mask; and a release layer laminated on the mask, wherein the mask is connected to the frame via the release layer, and the mask comprises: a first layer including a first surface, a second surface located opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a planar view; and a second layer including a third surface opposite the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first opening in a planar view, wherein the first layer comprises silicon or a silicon compound, and the release layer is formed on the outer edge of the first layer and / or on the first surface of the outer region of the first layer, and decomposes, evaporates, or deforms when irradiated with light.

[0032] An eleventh aspect of the present disclosure is a frame laminate connected to a mask containing silicon or a silicon compound, the frame comprising: a frame; and a release layer laminated on the frame, wherein the frame is connected to the mask via the release layer, the frame comprises glass or metal, and the release layer is formed on a surface facing one side and / or a side surface of the frame, and is decomposed, evaporated, or deformed when irradiated with light.

[0033] In the frame laminate according to the twelfth aspect in accordance with the eleventh aspect described above, the frame may have an opening penetrating in its thickness direction, and the release layer may be formed on a surface facing one side of the frame and / or on an inner surface (inner peripheral surface).

[0034] In the frame laminate according to the thirteenth aspect in accordance with the eleventh aspect or the twelfth aspect, the frame may be formed with a step portion that accommodates at least a part of the mask.

[0035] In the frame laminate according to the fourteenth aspect according to any one of the eleventh aspect to the thirteenth aspect, a groove may be formed on the surface facing the release layer.

[0036] In a frame laminate according to a fifteenth aspect, which is in accordance with any one of the eleventh aspect to the fourteenth aspect described above, the light transmittance in the thickness direction of the portion of the frame that overlaps the peel layer in a planar view may be 80% or more.

[0037] A sixteenth aspect of the present disclosure is a method for replacing a mask in a mask device according to any one of the first to ninth aspects described above, comprising: an irradiation step of irradiating the peeling layer with light to decompose, evaporate, or deform the peeling layer; a peeling step of peeling the mask from the frame after the irradiation step; and a mask preparation step of preparing a new mask; a connection layer formation step of forming a new connection layer on the frame and / or the new mask after the peeling step and the mask preparation step; and a connection step of connecting the frame to the new mask via the new connection layer.

[0038] In the replacement method according to the 18th aspect in accordance with the 17th aspect described above, the frame may include a fifth surface facing the same side as the fourth surface and a sixth surface located on the opposite side of the fifth surface, the portion of the frame that overlaps the peeling layer in a planar view may have a light transmittance in the thickness direction of 80% or more, and in the irradiation step, light may be irradiated onto the sixth surface, causing the light to enter the peeling layer through the frame.

[0039] An eighteenth aspect of the present disclosure is a method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by a vapor deposition method using a mask apparatus according to any one of the first to ninth aspects described above.

[0040] An embodiment will be described with reference to Figures 1 to 14. First, an organic device 100 including an organic layer formed using a mask will be described. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0041] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along an in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0042] The element 115 may have a first electrode 120 , an organic layer 130 overlying the first electrode 120 , and a second electrode 140 overlying the organic layer 130 .

[0043] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120. "Planar view" means viewing an object along the normal direction to the surface of a plate-like member such as the substrate 110.

[0044] The substrate 110 may be an insulating member. Examples of materials that can be used for the substrate 110 include rigid materials such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of silicon wafers used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment used in semiconductor manufacturing processes. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using equipment used in semiconductor manufacturing processes.

[0045] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140 or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0046] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0047] The organic layer 130 includes an organic material. When the organic layer 130 is energized, the organic layer 130 can perform some function. "Electrification" means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be, for example, a light-emitting layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may include an organic semiconductor material.

[0048] 1 , the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0049] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0050] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0051] The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in FIG. 1 , the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0052] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Fig. 2 is a diagram showing a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process for depositing a vapor deposition material on an object.

[0053] 2 , the vapor deposition apparatus 10 may include therein a vapor deposition source 6, a heater 8, and a framed mask 15. The vapor deposition apparatus 10 may further include an exhaust unit for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7 such as an organic material or a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 under a vacuum atmosphere.

[0054] The framed mask 15 includes a mask 20 and a frame 60 attached to the mask 20. The framed mask 15 is also referred to as a mask device 15. The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The exit surface 202 is located opposite the incident surface 201. The mask device 15 is supported by a mask holder 9. The mask device 15 is arranged so that the incident surface 201 faces the deposition source 6 and the exit surface 202 faces the first surface 111 of the substrate 110. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0055] As shown in FIG. 2 , the deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 includes a metal material, the magnet 5 can magnetically attract the mask 20 toward the substrate 110. As a result, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. This can prevent shadows from occurring during the deposition process. In this application, a shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, or the like.

[0056] Next, the mask device 15 will be described in detail. Fig. 3A is a plan view showing an example of the mask device 15 when viewed from the incident surface 201 side. Fig. 4 is a plan view showing an example of the mask device 15 when viewed from the exit surface 202 side. Fig. 5A is a cross-sectional view taken along line V-V of the mask device 15 in Fig. 3A. Fig. 5B is an enlarged view of the portion surrounded by the two-dot chain line in the cross section of Fig. 5A.

[0057] First, the mask 20 will be described in detail. As shown in FIG. 5A , the mask 20 includes a first layer 30 and a second layer 40 arranged in order from the incident surface 201 toward the exit surface 202. The first layer 30 includes silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The second layer 40 includes, for example, a metal material. The second layer 40 is not limited to a metal material and may include an appropriately selected material. For example, the second layer 40 may include a material other than a metal material in addition to a metal material. For example, the second layer 40 may not include a metal material, but may include a material other than a metal material. As shown in FIG. 5A , the mask 20 may further include an intermediate layer 50. The intermediate layer 50 is disposed between the first layer 30 and the second layer 40. Each layer will be described below.

[0058] The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301.

[0059] The first opening 31 penetrates the first layer 30 from the first surface 301 to the second surface 302. As shown in Fig. 3A, the first layer 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1.

[0060] The first opening 31 may correspond to one screen of the organic EL display device. The mask 20 shown in Fig. 3A can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in Fig. 3A, the first opening 31 may have a rectangular outline in a plan view.

[0061] 3B and 3C are plan views showing other examples of the mask 20. As shown in FIG. 3B, the corners of the outline of the first opening 31 may include curves. As shown in FIG. 3C, the outline of the first opening 31 may be octagonal. According to the examples shown in FIGS. 3B and 3C, when stress is applied to the outline of the first opening 31, the stress can be prevented from concentrating at the corners. As a result, damage to the first layer 30 can be prevented.

[0062] The first wall surface 32 is the surface of the first layer 30 facing the first opening 31. In the example shown in FIG.

[0063] 3A , the region of the first layer 30 where no first openings 31 are formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is a region located between two adjacent first openings 31 in a plan view. The outer region 35 is a region located between an outer edge 303 of the first layer 30 and the first openings 31 in a plan view. As shown in FIG. 3A , the inner region 36 may extend in a first direction D1 and a second direction D2.

[0064] 3A and 4 , the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302. The alignment marks 39 may also be formed on the first surface 301. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has a property of transmitting visible light, the alignment marks 39 can be seen through the substrate 110.

[0065] 3A and 4, the alignment mark 39 may have a circular outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or the inner region 36. The alignment mark 39 may be formed in a layer other than the first layer 30.

[0066] As described above, the first layer 30 includes silicon or a silicon compound. The first layer 30 is produced, for example, by processing a silicon wafer. As shown in FIG. 3A , the outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also referred to as an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also referred to as a notch. The orientation flat and the notch represent the crystal orientation of the silicon wafer.

[0067] The maximum dimension S1 of the first layer 30 in a planar view may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension S1 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension S1 may be defined by a first group consisting of 100 mm, 150 mm, and 200 mm and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of the dimension S1 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension S1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension S1 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S1 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.

[0068] The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 3 mm or more, 10 mm or more, or 20 mm or more. The dimension S2 may be, for example, 30 mm or less, 50 mm or less, or 100 mm or less. The range of the dimension S2 may be defined by a first group consisting of 3 mm, 10 mm, and 20 mm and / or a second group consisting of 30 mm, 50 mm, and 100 mm. The range of the dimension S2 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension S2 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension S2 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S2 may be, for example, 3 mm or more and 100 mm or less, 3 mm or more and 50 mm or less, 3 mm or more and 30 mm or less, 3 mm or more and 20 mm or less, 3 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, or 50 mm or more and 100 mm or less.

[0069] The spacing S3 between two first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more. The spacing S3 may be, for example, 10 mm or less, 15 mm or less, or 20 mm or less. The range of the spacing S3 may be defined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm and / or a second group consisting of 10 mm, 15 mm, and 20 mm. The range of the spacing S3 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the spacing S3 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the spacing S3 may be defined by a combination of any two of the values ​​included in the second group described above. The spacing S3 may be, for example, 0.1 mm or more and 20 mm or less, 0.1 mm or more and 15 mm or less, 0.1 mm or more and 10 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 20 mm or less, 0.5 mm or more and 15 mm or less, 0.5 mm or more and 10 mm or less, 0.5 mm or more and 1.0 mm or less, 1.0 mm or more and 20 mm or less, 1.0 mm or more and 15 mm or less, 1.0 mm or more and 10 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, or 15 mm or more and 20 mm or less.

[0070] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 may be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. The thickness T1 may be, for example, 600 μm or less, 800 μm or less, or 1000 μm or less. The range of the thickness T1 may be defined by a first group consisting of 50 μm, 100 μm, and 200 μm, and / or a second group consisting of 600 μm, 800 μm, and 1000 μm. The range of the thickness T1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the thickness T1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the thickness T1 may be defined by a combination of any two of the values ​​included in the second group described above. The thickness T1 may be, for example, 50 μm or more and 1000 μm or less, 50 μm or more and 800 μm or less, 50 μm or more and 600 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 800 μm or less, 100 μm or more and 600 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 1000 μm or less, 200 μm or more and 800 μm or less, 200 μm or more and 600 μm or less, 600 μm or more and 1000 μm or less, 600 μm or more and 800 μm or less, or 800 μm or more and 1000 μm or less.

[0071] Next, the second layer 40 will be described. The second layer 40 includes a third surface 401, a fourth surface 402, and a plurality of second openings 41. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401.

[0072] The second openings 41 penetrate the second layer 40 from the third surface 401 to the fourth surface 402. One second opening 41 corresponds to one organic layer 130. A group of the regularly arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in Figures 3A and 4, a group of the regularly arranged second openings 41 may overlap one first opening 31 in plan view. The groups of the second openings 41 are supported by the first layer 30 formed by processing a single member such as a silicon wafer.

[0073] 5A , the second layer 40 may be divided into a peripheral region 43 and an effective region 44. The peripheral region 43 is an area that overlaps with the first layer 30 in a plan view. The effective region 44 is an area where a group of a plurality of regularly arranged second openings 41 is distributed.

[0074] 5C is a cross-sectional view showing an example of the effective area 44. The second layer 40 includes a second wall surface 42 facing the second opening 41. As shown in Fig. 5C, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it approaches the third surface 401. By including the tapered surface 42a in the second wall surface 42, it is possible to suppress the occurrence of a shadow near the second wall surface 42.

[0075] In FIG. 5C , the symbol S8 represents the width of the tapered surface 42 a in the direction in which the second openings 41 are aligned. The width S8 may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more. The width S8 may be, for example, 10 μm or less, 20 μm or less, or 25 μm or less. The range of the width S8 may be determined by a first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm and / or a second group consisting of 10 μm, 20 μm, and 25 μm. The range of the width S8 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the width S8 may be determined by a combination of any two of the values ​​included in the first group. The range of the width S8 may be determined by a combination of any two of the values ​​included in the second group. The width S8 may be, for example, 0.1 μm or more and 25 μm or less, 0.1 μm or more and 20 μm or less, 0.1 μm or more and 10 μm or less, 0.1 μm or more and 1.0 μm or less, 0.1 μm or more and 0.5 μm or less, 0.5 μm or more and 25 μm or less, 0.5 μm or more and 20 μm or less, 0.5 μm or more and 10 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 25 μm or less, 1.0 μm or more and 10 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or more and 25 μm or less.

[0076] In FIG. 5C , the symbol θ1 represents the angle between the second wall surface 42 and the fourth surface 402. The angle θ1 may be, for example, greater than or equal to 50°, greater than or equal to 55°, or greater than or equal to 60°. The angle θ1 may be, for example, less than or equal to 80°, less than or equal to 85°, or less than 90°. The range of the angle θ1 may be determined by a first group consisting of 50°, 55°, and 60° and / or a second group consisting of 80°, 85°, and 90°. The range of the angle θ1 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the angle θ1 may be determined by a combination of any two of the values ​​included in the first group. The range of the angle θ1 may be determined by a combination of any two of the values ​​included in the second group. The angle θ1 may be, for example, 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 60°, 60° or more and less than 90°, 60° or more and less than 85°, 60° or more and less than 80°, 80° or more and less than 90°, 80° or more and less than 85°, or 85° or more and less than 90°.

[0077] The second layer 40 may contain a metal material. When the second layer 40 contains a metal material, the mask 20 can be attached to the substrate 110 by using a magnet 5. In this case, the mask 20 can be attracted to the magnet 5 by magnetic force, thereby improving the adhesion between the mask 20 and the substrate 110. Therefore, the definition of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved.

[0078] The metal material contained in the second layer 40 may be a magnetic metal material. The material constituting the second layer 40 may be, for example, an iron alloy containing nickel. The iron alloy may further contain cobalt in addition to nickel. For example, the material of the second layer 40 may be an iron alloy containing nickel and cobalt in total at a content of 30% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less. Examples of the iron alloy containing nickel include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, and a low-thermal expansion Fe—Ni-based plated alloy containing 38% by mass or more and 54% by mass or less of nickel. Examples of the iron alloy containing nickel and cobalt include a Super Invar material containing 30% by mass or more and 34% by mass or less of nickel and further containing cobalt. Using such an iron alloy can reduce the thermal expansion coefficient of the second layer 40. For example, when a glass substrate is used as the substrate 110, the thermal expansion coefficient of the second layer 40 can be adjusted to be equal to or close to that of the glass substrate. Therefore, a decrease in accuracy can be suppressed.

[0079] As the material for forming the second layer 40, instead of the above-described iron alloy containing nickel, for example, nickel or a nickel alloy containing cobalt may be used. When a nickel alloy containing cobalt is used, a nickel alloy having a cobalt content of 8 mass % or more and 10 mass % or less may be used as the material for the second layer 40. When such nickel or nickel alloy is used, decomposition of the components of the plating solution used in the second layer formation step described below can be suppressed, and the stability of the plating solution can be improved.

[0080] The second layer 40 may be composed of a single metal layer or may include multiple metal layers. When the mask 20 includes the intermediate layer 50, the second layer 40 is composed of a material that is resistant to an etchant that etches the intermediate layer 50.

[0081] The thickness of the second layer 40 is smaller than the thickness T1 of the first layer 30. The thickness of the second layer 40 may be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more. The thickness of the second layer 40 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The thickness range of the second layer 40 may be defined by a first group consisting of 0.5 μm, 1.0 μm, and 2.0 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The thickness range of the second layer 40 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The thickness range of the second layer 40 may be defined by a combination of any two of the values ​​included in the first group described above. The thickness range of the second layer 40 may be defined by a combination of any two of the values ​​included in the second group described above. The thickness of the second layer 40 may be, for example, 0.5 μm to 25 μm, 0.5 μm to 10 μm, 0.5 μm to 5 μm, 0.5 μm to 2.0 μm, 0.5 μm to 1.0 μm, 1.0 μm to 25 μm, 1.0 μm to 10 μm, 1.0 μm to 5 μm, 1.0 μm to 2.0 μm, 2.0 μm to 25 μm, 2.0 μm to 10 μm, 2.0 μm to 5 μm, 5 μm to 25 μm, 5 μm to 10 μm, or 10 μm to 25 μm. Having a thickness of 25 μm or less of the second layer 40 can suppress the occurrence of shadows. By making the thickness of the second layer 40 0.5 μm or more, it is possible to prevent defects such as pinholes and deformation from occurring in the second layer 40 .

[0082] The dimension S4 of the second opening 41 in plan view may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The dimension S4 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the dimension S4 may be defined by a first group consisting of 1 μm, 2 μm, and 3 μm, and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the dimension S4 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the dimension S4 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension S4 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S4 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

[0083] The spacing S5 between two second openings 41 in the direction in which the second openings 41 are arranged may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The spacing S5 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the spacing S5 may be determined by a first group consisting of 1 μm, 2 μm, and 3 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the spacing S5 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the spacing S5 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the spacing S5 may be determined by a combination of any two of the values ​​included in the second group described above. The spacing S5 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

[0084] A distance S6 between the first wall surface 32 and the second opening 41 in a plan view may be larger than the distance S5. As a result, it is possible to prevent a shadow from being generated in the second opening 41 close to the first wall surface 32.

[0085] The second layer 40 may include an alignment mark. The alignment mark of the second layer 40 may be formed separately from the alignment mark 39 of the first layer 30, or may be formed instead of the alignment mark 39 of the first layer 30.

[0086] Next, the intermediate layer 50 will be described. The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the second layer 40. For example, the intermediate layer 50 includes a first intermediate layer 51. In the example shown in FIG. 5B , the first intermediate layer 51 is located between the first layer 30 and the second layer 40.

[0087] The first intermediate layer 51 may function as a stopper layer that stops etching in the step of processing the first layer 30 by etching. Specifically, the first intermediate layer 51 is resistant to an etchant that etches the first layer 30. The first intermediate layer 51 may contain aluminum, an aluminum alloy, titanium, or a titanium alloy. The first intermediate layer 51 may also contain an inorganic compound such as silicon oxide.

[0088] When the first intermediate layer 51 is a stopper layer, the thickness of the first intermediate layer 51 is not particularly limited as long as it can prevent the second layer 40 from being etched in the process of processing the first layer 30. For example, the thickness of the first intermediate layer 51 may be smaller than the thickness of the second layer 40 or may be greater than or equal to the thickness of the second layer 40. The thickness of the first intermediate layer 51 may be, for example, 5 nm or greater, 50 nm or greater, or 75 nm or greater. The thickness of the first intermediate layer 51 may be, for example, 1 μm or less, 10 μm or less, or 100 μm or less. The range of the thickness of the first intermediate layer 51 may be determined by a first group consisting of 5 nm, 50 nm, and 75 nm and / or a second group consisting of 1 μm, 10 μm, and 100 μm. The range of the thickness of the first intermediate layer 51 may be determined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The thickness range of the first intermediate layer 51 may be determined by a combination of any two of the values ​​included in the first group described above. The thickness range of the first intermediate layer 51 may be determined by a combination of any two of the values ​​included in the second group described above. The thickness of the first intermediate layer 51 may be, for example, 5 nm to 100 μm, 5 nm to 10 μm, 5 nm to 1 μm, 5 nm to 75 nm, 5 nm to 50 nm, 50 nm to 100 μm, 50 nm to 10 μm, 50 nm to 1 μm, 50 nm to 75 nm, 75 nm to 100 μm, 75 nm to 10 μm, 75 nm to 1 μm, 1 μm to 10 μm, or 10 μm to 100 μm. The higher the resistance of the first intermediate layer 51 to the etchant for the first layer 30, the smaller the thickness of the first intermediate layer 51 can be. It is particularly preferable that the thickness of the first intermediate layer 51 be 1 μm or less.

[0089] The intermediate layer 50 may include a layer that functions to bond the first layer 30 and the second layer 40. For example, the first intermediate layer 51 may be a bonding layer containing an adhesive. The thickness of the bonding layer may be, for example, 0.1 μm or more, 0.2 μm or more, or 0.5 μm or more. The thickness of the bonding layer may be, for example, 1 μm or less, 2 μm or less, or 3 μm or less. The range of thicknesses of the bonding layer may be defined by a first group consisting of 0.1 μm, 0.2 μm, and 0.5 μm, and / or a second group consisting of 1 μm, 2 μm, and 3 μm. The range of thicknesses of the bonding layer may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thicknesses of the bonding layer may be defined by a combination of any two of the values ​​included in the first group. The range of thicknesses of the bonding layer may be defined by a combination of any two of the values ​​included in the second group. The thickness of the bonding layer may be, for example, 0.1 μm or more and 3 μm or less, 0.1 μm or more and 2 μm or less, 0.1 μm or more and 1 μm or less, 0.1 μm or more and 0.5 μm or less, 0.1 μm or more and 0.2 μm or less, 0.2 μm or more and 3 μm or less, 0.2 μm or more and 2 μm or less, 0.2 μm or more and 1 μm or less, 0.2 μm or more and 0.5 μm or less, 0.5 μm or more and 3 μm or less, 0.5 μm or more and 2 μm or less, 0.5 μm or more and 1 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, or 2 μm or more and 3 μm or less.

[0090] Preferably, the intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. As a result, the occurrence of a shadow due to the intermediate layer 50 can be suppressed.

[0091] The first intermediate layer 51 may include an alignment mark. The alignment mark of the first intermediate layer 51 may be formed separately from the alignment mark of the first layer 30 or the second layer 40, or may be formed instead of the alignment mark of the first layer 30 or the second layer 40.

[0092] Next, the frame 60 will be described in detail. The frame 60 is attached to the mask 20 so that it can be gripped when handling the mask 20, for example, when moving the mask 20. As shown in FIG. 3A and other figures, the mask 20 has second openings 41, and therefore first openings 31, formed up to the vicinity of its outer edge. When handling the mask 20, for example, when moving the mask 20, it is desirable to grip the region outside the region where the second openings 41 are formed in order to prevent deformation of the second openings 41 in the second layer 40. However, because the first openings 31 are formed up to the vicinity of the outer edge 303 of the first layer 30, the width of the outer region 35 is insufficient to grip the mask 20. Furthermore, because the first openings 31 are formed up to the vicinity of the outer edge 303 of the first layer 30, the outer region 35 is narrow. The narrow outer region 35 is particularly susceptible to breakage when the first layer 30 contains silicon. By attaching the frame 60 to such a mask 20, the frame 60 can be grasped when handling the mask 20, and the risk of damage to the first layer 30 is reduced. As a result, the mask 20 becomes easier to handle.

[0093] 3A to 5B , the frame 60 includes a fifth surface 601 and a sixth surface 602. The fifth surface 601 faces the same side as the fourth surface 402. The sixth surface 602 is located on the opposite side of the fifth surface 601. In the illustrated example, the fifth surface 601 faces the first surface 301. Note that the frame 60 is parallel to the second layer 40 so that the second layer 40 is horizontal when the mask device 15 is supported by the mask holder 9 of the deposition apparatus 10.

[0094] 5A and 5B , the frame 60 is connected to the first surface 301 of the outer region 35. In the illustrated example, a connecting layer 70 is disposed between the first surface 301 of the outer region 35 and the fifth surface 601 of the frame 60. The frame 60 is connected to the first layer 30 via the connecting layer 70. In a plan view, the frame 60 does not overlap with the first opening 31. In addition, in a plan view, at least a portion of the frame 60 extends to the outside of the outer edge 303 of the first layer 30. As a result, the frame 60 expands the area for gripping the mask 20 when handling it.

[0095] The frame 60 may include a glass material or a metal material. Examples of the glass material include quartz glass, borosilicate glass, alkali-free glass, and soda glass. Examples of the metal material include Invar and stainless steel such as SUS430 and SUS304. By including these materials in the frame 60, the rigidity of the frame 60 can be made higher than that of the first layer 30. The material of the frame 60 may be determined so that the frame 60 has the required rigidity, taking into consideration the gripping strength of an operator or robot hand handling the mask device 15.

[0096] In the illustrated example, the frame 60 includes a material that transmits light such as laser light. The light transmittance in the thickness direction of the frame 60 (the direction from the sixth surface 602 to the fifth surface 601) may be 80% or more. As a result, as described below, laser light can be incident on the connection layer 70 through the frame 60. In this specification, light transmittance refers to the transmittance of light such as laser light having a wavelength of 200 to 1100 nm. The frame 60 may have a light transmittance of 80% or more in a partial wavelength range of 200 to 1100 nm. The light transmittance is calculated as I / I, where I is the luminous flux of incident light incident on the sixth surface 602 and I is the luminous flux of transmitted light that passes through the frame 60 and exits from the fifth surface 601. The light transmittance is measured in accordance with JIS R3106:2019. After removing the release layer 71 from the fifth surface 601 of the frame 60, the light transmittance is measured at a portion of the fifth surface 601 that overlaps with the release layer 71 in a plan view. The light transmittance is measured at a portion of the frame 60 where the fifth surface 601 and the sixth surface 602 are parallel to each other.

[0097] The linear thermal expansion coefficient of the frame 60 is preferably approximately the same as the linear thermal expansion coefficient of the first layer 30. As a result, the elongation rates of the frame 60 and the first layer 30 can be approximately the same when the mask device 15 is heated. As a result, the risk of damage to the first layer 30 is reduced. Specifically, the absolute value of the difference between the linear thermal expansion coefficient of the frame 60 and the linear thermal expansion coefficient of the first layer 30 is 15 ppm / °C or less, or may be 10 ppm / °C or less, or may be 5.0 ppm / °C or less.

[0098] In the illustrated example, the frame 60 is formed in an annular shape. The frame 60 has a region that extends circumferentially outside the outer edge 303 of the first layer 30 in a plan view. As a result, the risk of damage to the outer region 35 of the first layer 30 when handling the mask 20 is effectively reduced. More specifically, a third opening 61 that penetrates from the fifth surface 601 to the sixth surface 602 is formed in the center of the frame 60. In the illustrated example, the third opening 61 has a shape similar to the outer edge 303 of the first layer 30. The maximum dimension S9 of the third opening 61 is smaller than the maximum dimension S1 of the outer edge 303 of the first layer 30. In a plan view, the third opening 61 overlaps the first openings 31. In the illustrated example, the third opening 61 also overlaps the inner region 36 of the first layer 30 in a plan view. In other words, the third opening 61 overlaps all of the first openings 31 in a plan view.

[0099] The shape and dimensions of the outer edge 603 of the frame 60 are not particularly limited. The shape and dimension S10 of the outer edge 603 of the frame 60 may be determined based on the dimensions and shape of the hand of a worker or robot hand handling the mask device 15 and the dimensions and shape of the mask holder 9 of the deposition apparatus 10. The outer edge 603 of the frame 60 may be rectangular or another polygonal shape. The dimension S10 of the outer edge 603 of the frame 60 may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension S10 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension S10 may be defined by a first group consisting of 100 mm, 150 mm, and 200 mm, and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of dimension S10 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of dimension S10 may be defined by a combination of any two of the values ​​included in the first group described above. The range of dimension S10 may be defined by a combination of any two of the values ​​included in the second group described above. The dimension S10 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.

[0100] The distance S11 between the outer edge 603 of the frame 60 and the outer edge 303 of the first layer 30 may also be determined based on the dimensions and shape of the hand of a worker or robot hand handling the mask device 15 and the dimensions and shape of the mask holder 9 of the vapor deposition apparatus 10. The distance S11 may be, for example, 5 mm or more, 10 mm or more, or 15 mm or more. The distance S11 may be, for example, 30 mm or less, 60 mm or less, or 100 mm or less. The range of the distance S11 may be defined by a first group consisting of 5 mm, 10 mm, and 15 mm and / or a second group consisting of 30 mm, 60 mm, and 100 mm. The range of the distance S11 may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of the distance S11 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the distance S11 may be determined by a combination of any two of the values ​​included in the second group. The distance S11 may be, for example, 5 mm to 100 mm, 5 mm to 60 mm, 5 mm to 30 mm, 5 mm to 15 mm, 5 mm to 10 mm, 10 mm to 100 mm, 10 mm to 60 mm, 10 mm to 30 mm, 10 mm to 15 mm, 15 mm to 100 mm, 15 mm to 60 mm, 15 mm to 30 mm, 30 mm to 100 mm, 30 mm to 60 mm, or 60 mm to 100 mm.

[0101] The thickness T2 of the frame 60 is also not particularly limited. It may be determined based on the dimensions and shape of the hand of a worker or robot hand handling the mask device 15 and the dimensions and shape of the mask holder 9 of the vapor deposition apparatus 10. The thickness T2 may be, for example, 500 μm or more, 2 mm or more, or 5 mm or more. The thickness T2 may be, for example, 10 mm or less, 20 mm or less, or 30 mm or less. The range of the thickness T2 may be defined by a first group consisting of 500 μm, 2 mm, and 5 mm, and / or a second group consisting of 10 mm, 20 mm, and 30 mm. The range of the thickness T2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T2 may be defined by a combination of any two of the values ​​included in the first group. The range of the thickness T2 may be defined by a combination of any two of the values ​​included in the second group. The thickness T2 may be, for example, 500 μm or more and 30 mm or less, 500 μm or more and 20 mm or less, 500 μm or more and 10 mm or less, 500 μm or more and 5 mm or less, 500 μm or more and 2 mm or less, 2 mm or more and 30 mm or less, 2 mm or more and 20 mm or less, 2 mm or more and 10 mm or less, 2 mm or more and 5 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, or 20 mm or more and 30 mm or less.

[0102] By determining the shape and dimensions of the outer edge 603 of the frame 60 and the thickness T2 of the frame 60 based on the dimensions and shape of the robot hand that handles the mask device 15 and the dimensions and shape of the mask holder 9 of the vapor deposition apparatus 10, the shape and dimensions of the mask device 15 can be made suitable for an existing robot hand or an existing vapor deposition apparatus 10. In other words, it is not necessary to make the shape and dimensions of the mask 20 suitable for an existing robot hand or an existing vapor deposition apparatus 10, and the degree of freedom in designing the mask 20 is improved.

[0103] In the illustrated example, the fifth surface 601 of the frame 60 is located closer to the first surface 301 of the first layer 30 than the fourth surface 402 of the second layer 40. In other words, the second layer 40 protrudes from the fifth surface 601 of the frame 60. As a result, when a deposition layer is formed on the substrate 110 or a component on the substrate 110 through the mask 20, the second layer 40 can come into contact with the substrate 110 or a component on the substrate 110.

[0104] The frame 60 may include alignment marks. As a result, when attaching the frame 60 to the mask 20, it is easy to position the mask 20 with respect to the frame 60. The alignment marks formed on the frame 60 can also be used to adjust the relative position of the substrate 110 with respect to the mask 20. For example, even if the alignment marks 39 are formed on the first layer 30, if the second layer 40 is formed up to the outer edge 303 of the first layer 30, the alignment marks 39 will be covered by the second layer 40, making it difficult to adjust the position of the substrate 110 with respect to the mask 20 while observing the alignment marks 39. In this case, by forming an alignment mark mask on the frame 60, it is possible to adjust the position of the substrate 110 with respect to the mask device 15, and therefore with respect to the mask 20.

[0105] In the example shown in Figures 5A and 5B, the frame 60 is connected to the first layer 30 via a connecting layer 70. Figure 6 is an enlarged view of the portion surrounded by the two-dot chain line in the cross-sectional view of Figure 5B. In the example shown in Figure 6, the connecting layer 70 is disposed between the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30.

[0106] The connecting layer 70 fixes the frame 60 to the first layer 30 by adhesion, adhesion, or welding. In the illustrated example, the connecting layer 70 includes a release layer 71 and an adhesive layer 75. In the illustrated example, the adhesive layer 75 contacts the first surface 301 of the mask 20. The release layer 71 is disposed between the adhesive layer 75 and the frame 60 and contacts the fifth surface 601 of the frame 60. By disposing the adhesive layer 75 between the release layer 71 and the mask 20, the bonding strength between the release layer 71 and the mask 20 can be improved.

[0107] The adhesive layer 75 may include a glass material, an inorganic material, a metal material, or a resin material. The adhesive layer 75 may be formed of glass frit, glass paste, solder paste, conductive paste, epoxy resin, polyimide, acrylic resin, or the like. To suppress outgassing from the adhesive layer 75 during the vapor deposition process in the vapor deposition apparatus 10, for example, the high-heat-resistant epoxy adhesive "AREMCOBOND 526N" manufactured by Aremco Products, Inc. or the UV-curable adhesives "WORLDROCK (registered trademark) 5910 (product number)" or "WORLDROCK (registered trademark) 8723K9B (product number)" manufactured by Kyoritsu Chemical Industries Co., Ltd. may be used as the material for forming the adhesive layer 75. Furthermore, using a highly solvent-resistant material for the adhesive layer 75 can suppress deformation of the adhesive layer 75 in contact with a cleaning solution, which can cause the frame 60 to unintentionally separate from the mask 20 when the mask device 15 used in the vapor deposition process is cleaned to remove the vapor deposition material. In this case, for example, an ultraviolet curing adhesive "ThreeBond (registered trademark) 3026E (product name)" manufactured by ThreeBond Co., Ltd. can be used as the material for forming the adhesive layer 75.

[0108] The thickness of the adhesive layer 75 may be, for example, 0.05 μm or more, 5 μm or more, or 10 μm or more. The thickness of the adhesive layer 75 may be, for example, 20 μm or less, 50 μm or less, or 100 μm or less. The thickness range of the adhesive layer 75 may be defined by a first group consisting of 0.05 μm, 5 μm, and 10 μm and / or a second group consisting of 20 μm, 50 μm, and 100 μm. The thickness range of the adhesive layer 75 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The thickness range of the adhesive layer 75 may be defined by a combination of any two of the values ​​included in the first group described above. The thickness range of the adhesive layer 75 may be defined by a combination of any two of the values ​​included in the second group described above. The thickness of the adhesive layer 75 may be, for example, 0.05 μm or more and 100 μm or less, 0.05 μm or more and 50 μm or less, 0.05 μm or more and 20 μm or less, 0.05 μm or more and 10 μm or less, 0.05 μm or more and 5 μm or less, 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less.

[0109] The release layer 71 decomposes, evaporates, or deforms when irradiated with light such as laser light. Therefore, the bonding strength between the mask 20 and the frame 60 can be reduced by irradiating the release layer 71 with light such as laser light. As a result, it is easy to peel a used mask 20 from the frame 60 and reuse the frame 60 to manufacture a new mask device 15. More specifically, there is no need to immerse the mask device 15 in a solvent to dissolve the adhesive layer 75 in the solvent in order to peel the mask 20 from the frame 60. Since no solvent is required to peel the mask 20, a material that is insoluble in a solvent can be used for the adhesive layer 75, thereby expanding the options for materials for the adhesive layer 75.

[0110] "Decomposition" means that a chemical reaction such as carbonization progresses in at least a part of the release layer 71. For example, the chemical reaction may change the properties of the release layer 71, which may result in a decrease in the bonding strength between the mask 20 and the frame 60.

[0111] "Evaporation" means that the temperature of at least a part of the release layer 71 increases and the release layer 71 scatters. The evaporation occurs, for example, by ablation. For example, the evaporation may cause a gap to form between the release layer 71 and the mask 20 or the frame 60, which may reduce the bonding strength between the mask 20 and the frame 60.

[0112] "Deformation" means that the shape of at least a part of the surface of the release layer 71 changes. The deformation occurs, for example, when the distribution of internal stress in the release layer 71 changes due to irradiation with light. For example, the deformation may cause a gap to form between the release layer 71 and the mask 20 or the frame 60, which may reduce the bonding strength between the mask 20 and the frame 60.

[0113] The release layer 71 may contain copper (Cu), titanium (Ti), aluminum (Al), niobium (Nb), zirconium (Zr), chromium (Cr), tungsten (W), tantalum (Ta), cobalt (Co), silver (Ag), nickel (Ni), indium (In), tin (Sn), zinc (Zn), gallium (Ga), or molybdenum (Mo). The release layer 71 may be formed from a metal oxide or metal oxynitride containing these metals, or a resin material such as an epoxy resin or polyimide. For the purpose of suppressing outgassing from the release layer 71 during the deposition process in the deposition apparatus 10, for example, a metal oxide or metal oxynitride can be used as the material for forming the release layer 71. Furthermore, by using a material with high solvent resistance as the material for forming the release layer 71, it is possible to suppress the risk of the release layer 71 deforming in contact with a cleaning solution and causing the frame 60 to unintentionally separate from the mask 20 when the mask device 15 used in the deposition process is cleaned to remove the deposition material. In this case, for example, titanium (Ti) or aluminum (Al) can be used as the material for forming the release layer 71 .

[0114] The thickness of the release layer 71 may be, for example, 0.05 μm or more, 5 μm or more, or 10 μm or more. The thickness of the release layer 71 may be, for example, 20 μm or less, 50 μm or less, or 100 μm or less. The thickness range of the release layer 71 may be defined by a first group consisting of 0.05 μm, 5 μm, and 10 μm and / or a second group consisting of 20 μm, 50 μm, and 100 μm. The thickness range of the release layer 71 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The thickness range of the release layer 71 may be defined by a combination of any two of the values ​​included in the first group described above. The thickness range of the release layer 71 may be defined by a combination of any two of the values ​​included in the second group described above. The thickness of the release layer 71 may be, for example, 0.05 μm or more and 100 μm or less, 0.05 μm or more and 50 μm or less, 0.05 μm or more and 20 μm or less, 0.05 μm or more and 10 μm or less, 0.05 μm or more and 5 μm or less, 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less.

[0115] The thickness of each layer, the dimensions of each component, the spacing, etc. can be measured by observing an image of a cross section of the mask device 15 or mask 20 using a scanning electron microscope.

[0116] (Method of Manufacturing Mask Device) Next, a method of manufacturing a mask device according to this embodiment will be described with reference to FIGS. 7 to 13. First, a method of manufacturing the mask 20 will be described. First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.

[0117] 7 , an intermediate layer forming step is performed to form an intermediate layer 50 on the second surface 302 of the first layer 30. The intermediate layer 50 includes, for example, a first intermediate layer 51. The intermediate layer 50 may be formed over the entire second surface 302. The intermediate layer 50 may be formed by a vacuum film formation method such as sputtering.

[0118] 8 , a second layer forming step is carried out to form the second layer 40 on the intermediate layer 50. As a result, a laminate 22 including the first layer 30, the intermediate layer 50, and the second layer 40 can be obtained. The second layer 40 may be formed over the entire intermediate layer 50.

[0119] The second layer 40 may be formed by, for example, a plating process. Here, the second layer 40 is formed by an electrolytic plating process using the intermediate layer 50 as a power supply electrode. More specifically, a plating solution is supplied to the surface of the intermediate layer 50 opposite the first layer 30 side. For example, the intermediate layer 50 together with the first layer 30 is immersed in a plating tank filled with a plating solution. Components of the plating solution are deposited on the surface of the intermediate layer 50 opposite the first layer 30 side, forming the second layer 40. In this manner, the second layer 40 is attached to the intermediate layer 50.

[0120] The components of the plating solution used are determined appropriately depending on the characteristics required of the second layer 40. For example, if the second layer 40 is made of an iron alloy containing nickel, the plating solution may be a mixed solution of a solution containing a nickel compound and a solution containing an iron compound. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate may be used. Furthermore, if the second layer 40 is made of nickel, the plating solution may be a solution containing a nickel compound. For example, a nickel sulfamate solution may be used. Furthermore, if the second layer 40 is made of a nickel alloy containing cobalt, the plating solution may be a mixed solution of a solution containing a nickel compound and a solution containing a cobalt compound. For example, a cobalt sulfamate solution may be used. Each of the above-mentioned plating solutions may contain various additives. Examples of additives include pH buffers such as boric acid, and additives such as malonic acid and saccharin.

[0121] After the second layer 40 is formed, the second layer 40 may be annealed (fired). As a result, the second layer 40 formed by the plating process can be recrystallized, thereby reducing the thermal expansion coefficient of the second layer 40. That is, even if a rolled material produced by a rolling process and a plated material produced by a plating process have the same material composition, the thermal expansion coefficient of the plated material tends to be higher than the thermal expansion coefficient of the rolled material. Therefore, the second layer 40 may be recrystallized to reduce the thermal expansion coefficient of the second layer 40. During such annealing, the second layer 40 may be heated, for example, at a temperature of 600°C for 5 minutes.

[0122] In the second layer formation step, the specific plating method is not particularly limited as long as the second layer 40 can be formed. For example, electroless plating may be performed instead of electrolytic plating. When electroless plating is performed, since there are no electrodes as in electrolytic plating, the thickness of the second layer 40 formed by electroless plating can be made uniform. When electroless plating is performed, a catalyst layer (not shown) may be provided on the surface of the intermediate layer 50 opposite the first layer 30. Even when electrolytic plating is performed, a similar catalyst layer may be provided on the intermediate layer 50.

[0123] Although not shown, a pressing step may be performed to press the second layer 40. For example, the surface of a substrate, such as a silicon wafer or glass wafer, other than the first layer 30 may be pressed against the second layer 40. If the surface of the substrate is flatter than the fourth surface 402 of the second layer 40, the pressing step can increase the flatness of the fourth surface 402. The surface of the substrate may include a concave-convex pattern. In this case, the concave-convex pattern can be imparted to the fourth surface 402 by the pressing step. The pressing step may be performed before the step of heating the second layer 40.

[0124] Although not shown, the laminate 22 may include a protective layer located on the fourth surface 402 of the second layer 40. The protective layer may contain, for example, the same material as the material of the first intermediate layer 51. By forming the protective layer on the fourth surface 402, etching of the fourth surface 402 can be suppressed in the first processing step described below. The protective layer may be removed simultaneously with the first intermediate layer 51.

[0125] 9, a resist forming step is carried out to form a resist layer 38 partially on the first surface 301 of the first layer 30. A resist opening 381 facing the first opening 31 is formed in the resist layer 38.

[0126] The resist layer 38 may be a photoresist. In this case, the resist layer 38 is formed on the first surface 301 by first coating the first surface 301 with a liquid resist material. After coating, a step of heating the resist layer 38 may be performed. Subsequently, a photolithography process is performed in which the resist layer 38 is exposed and developed. As a result, resist openings 381 can be formed in the resist layer 38.

[0127] Although not shown, the resist layer 38 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation process on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the second layer 40 are stacked on the first layer 30.

[0128] Next, as shown in FIG. 10 , a first processing step is performed in which the first layer 30 is etched from the first surface 301 side to form a first opening 31 in the first layer 30. The etching in the first processing step may be dry etching using an etching gas. The etching gas is an example of the etchant described above. Because the intermediate layer 50 is resistant to the etchant, as shown in FIG. 10 , the etching can be prevented from progressing to the second layer 40.

[0129] When the etching process is deep reactive ion etching, the etching process is carried out, for example, as follows. That is, an etching gas is introduced into a chamber. A voltage is applied to the space in the chamber to convert the etching gas into plasma. Radicals, ions, etc. in the plasma pass through the resist opening 381 and collide with the first surface 301, thereby forming a first opening 31 in the first layer 30 as shown in FIG. 10. The etching gas is, for example, SF ６ It's gas.

[0130] After the holes reach the intermediate layer 50, a resist removal step may be performed to remove the resist layer 38. For example, a resist processing liquid is supplied to the first surface 301. When the resist layer 38 is a photoresist, the resist processing liquid may contain, for example, N-methyl-2-pyrrolidone. The resist layer 38 may be removed by irradiating the resist layer 38 with oxygen plasma. When the resist layer 38 is a silicon oxide film, the resist processing liquid may contain, for example, hydrofluoric acid. CF ４ The resist layer 38 may be removed by dry etching using gas or the like.

[0131] After the first processing step, an intermediate layer removal step may be performed to remove the intermediate layer 50. For example, an etchant for the intermediate layer 50 is supplied to the first opening 31. As a result, as shown in FIG. 11 , the intermediate layer 50 that overlaps the first opening 31 in plan view can be removed. The etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or wet etching using an acidic etching solution.

[0132] The order of the resist removing step and the intermediate layer removing step is not particularly limited, and the resist removing step and the intermediate layer removing step may be carried out simultaneously.

[0133] Next, a second processing step is carried out to form a plurality of second openings 41 in the second layer 40. For example, as shown in Fig. 12, laser light L1 is irradiated onto the third surface 401 of the second layer 40. As a result, the second openings 41 can be formed in the second layer 40. As the laser light L1, a KrF excimer laser with a wavelength of 248 nm, a YAG laser with a wavelength of 355 nm, or the like can be used.

[0134] The second processing step may be performed in a state where a protective film or protective layer is formed on the fourth surface 402 of the second layer 40. The protective film is a member that is attached to the fourth surface 402. The protective film includes, for example, a resin film and an adhesive layer. The protective film is attached to the fourth surface 402 so that the adhesive layer is in contact with the fourth surface 402. The adhesive layer may be a pressure-sensitive adhesive layer or an adsorption layer. The protective film is formed by applying a liquid containing a resin to the fourth surface 402. Examples of the application method include bar coating, spin coating, and spray coating. The protective film or protective layer may be removed after the second processing step is completed. Preferably, the reactivity of the protective film or protective layer to laser light is lower than that of the second layer 40. The reactivity refers to the speed at which the protective film or protective layer or the second layer 40 is processed by laser light.

[0135] In the second processing step, first, the laminate 22 is placed on a stage so that the fourth surface 402 faces the stage surface. Next, the position of the irradiation head relative to the laminate 22 is adjusted. In the position adjustment step, the irradiation head may be moved, or the stage may be moved. By repeatedly irradiating the laser light and adjusting the position, a plurality of second openings 41 can be formed in the second layer 40. In this manner, the mask 20 can be obtained.

[0136] Alternatively, a laser mask corresponding to the pattern of the plurality of second openings 41 may be used. In this case, a condenser lens may be installed between the laser mask and the second layer 40. The plurality of second openings 41 can be formed by a laser processing method using a reduced projection optical system.

[0137] One second opening 41 may be formed by one shot of laser light. One second opening 41 may be formed by two or more shots of laser light. In this case, the depth of the recess formed in the second layer 40 by one shot of laser light is smaller than the thickness of the second layer 40.

[0138] The laser light may be adjusted so that the second wall surface 42 of the second opening 41 includes the tapered surface 42a. For example, the irradiation area of ​​the laser light corresponding to the second opening 41 may be changed for each shot. For example, the second processing step may include a first shot step in which the third surface 401 is irradiated with laser light having a first irradiation area, and a second shot step in which the third surface 401 is irradiated with laser light having a second irradiation area larger than the first irradiation area. The first irradiation area may correspond to the area of ​​the second opening 41 on the fourth surface 402. The second irradiation area may correspond to the area of ​​the second opening 41 on the third surface 401. The second processing step may include three or more shot steps. The irradiation area and intensity of the laser light in each shot step are set so that the second wall surface 42 includes the tapered surface 42a. For example, one transmitting portion of the laser mask may include a first transmitting region having a first transmittance and a second transmitting region having a second transmittance lower than the first transmittance. The outline of the first transmission region may correspond to the outline of the second opening 41 on the fourth surface 402. The second transmission region may surround the first transmission region in a plan view. The outline of the second transmission region may correspond to the outline of the second opening 41 on the third surface 401. One transmission section may include three or more transmission regions. The shape and transmittance of each transmission region are set so that the second wall surface 42 includes a tapered surface 42 a.

[0139] As described above, the second layer 40 according to this embodiment is formed by plating. In this case, stress acting in a direction that causes the second layer 40 to shrink in plan view remains in the second layer 40. Therefore, even if the temperature of the second layer 40 rises and the second layer 40 thermally expands, for example, during vapor deposition, the positional accuracy of the second opening 41 can be maintained as long as the stress remains.

[0140] Next, a method for manufacturing the frame 60 will be described. First, a plate-shaped member containing the above-mentioned glass material or metal material is prepared. Next, the plate-shaped member is cut to produce the frame 60 having the third opening 61. A drill, a cutting tool, a milling cutter, an end mill, or the like can be used as a cutting tool for cutting the plate-shaped member.

[0141] After the mask 20 and the frame 60 are fabricated, an attachment process is performed to attach the frame 60 to the mask 20. Specifically, as shown in FIG. 13 , a release layer 71 is formed circumferentially on the fifth surface 601 of the frame 60 along the edge of the third opening 61. As a result, a frame 68 with a release layer is fabricated. The frame 68 with a release layer includes the frame 60 and the release layer 71 laminated on the frame 60. The frame 68 with a release layer is also referred to as a frame laminate 68. In addition, an adhesive layer 75 is formed circumferentially on the incident surface 201 of the mask 20 along the outer edge 303. This results in a mask 28 with an adhesive layer. The release layer 71 and / or the adhesive layer 75 may be softened by heating or the like before connecting the mask 20 to the frame 60.

[0142] Next, the mask 28 with the adhesive layer is supported from the side of the first layer 30 using a support means 80. The support means 80 supports the inner region 36 of the first layer 30 from the side of the first surface 301. Then, the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30 are brought face to face, and the support means 80 is moved to bring the adhesive layer 75 on the mask 20 close to the release layer 71 on the frame 60. At this time, the mask 20 is positioned relative to the frame 60 using the alignment marks on the frame 60 and the alignment marks on the mask 20. If the mask 20 is warped, a pressing means facing the support means 80 is used to correct the warp while bringing the mask 20 close to the frame 60. The adhesive layer 75 and the release layer 71 are bonded to each other, forming the connection layer 70.

[0143] Next, a pressing step is performed in which the mask 20 and the frame 60 are pressed against each other, which results in the connection layer 70 being crushed and the thickness of the connection layer 70 becoming uniform, so that the second layer 40 and the frame 60 become parallel to each other.

[0144] Next, the connecting layer 70 is hardened by cooling or the like, thereby fixing the mask 20 and the frame 60 to each other. In this way, the mask device 15 can be obtained.

[0145] (Mask Replacement Method) Next, a method for replacing the mask 20 in the mask device 15 according to this embodiment will be described with reference to FIGS. 14 and 13 . As described above, the mask device 15 is cleaned using an ultrasonic cleaner or the like before the vapor deposition process and reused for the vapor deposition process. Repeated cleaning can cause the mask 20 to deform or break, resulting in misalignment or deformation of the second opening 41. If vapor deposition is performed using such a mask 20, the accuracy of the position, shape, etc. of the vapor deposition layers, such as the organic layer 130 and the second electrode 140, formed on the substrate 110, decreases. Therefore, it is necessary to replace the mask 20 of a mask device 15 that has been used several times.

[0146] First, the used mask 20 is peeled off from the frame 60. For example, as shown in FIG. 14 , an irradiation step is performed in which the release layer 71 is irradiated with laser light L2. As a result, the release layer 71 decomposes, evaporates, or deforms. As a result, the bonding strength between the mask 20 and the frame 60 decreases, allowing the mask 20 to be peeled off from the frame 60. In the illustrated example, the frame 60 transmits the laser light L2. Therefore, the laser light L2 can be transmitted through the frame 60 and incident on the release layer 71. Therefore, as shown in FIG. 14 , the sixth surface 602 of the frame 60 may be irradiated with the laser light L2, causing the laser light L2 to be incident on the release layer 71 through the frame 60. In particular, in the illustrated example, because the light transmittance of the frame 60 in its thickness direction is 80% or more, even when the laser light L2 is incident on the release layer 71 through the frame 60, the laser light L2 can be incident on the release layer 71 with sufficient intensity. As a result, the laser light L2 can effectively decompose, evaporate, or deform the release layer 71. In the illustrated example, the release layer 71 is disposed between the adhesive layer 75 and the frame 60. The release layer 71 is in direct contact with the frame 60. This reduces the risk that the laser light L2 incident on the release layer 71 through the frame 60 will be absorbed by the adhesive layer 75, preventing the laser light L2 from reaching the release layer 71 with sufficient intensity.

[0147] As the laser light L2, a KrF excimer laser with a wavelength of 248 nm, a YAG laser with a wavelength of 355 nm, or the like can be used.

[0148] In the irradiation step, light other than laser light may be irradiated onto the peeling layer 71. If the light has sufficient intensity, the peeling layer 71 can be decomposed, evaporated, or deformed. An example of a light source that generates light other than laser light is a flash lamp. The light generated by the flash lamp may be ultraviolet light, visible light, or infrared light.

[0149] A flash lamp is a light source that momentarily emits pulsed light with high peak intensity. An example of a flash lamp is a xenon flash lamp.

[0150] After the used mask 20 is peeled off from the frame 60, a new peel layer 71 is formed on the frame 60 as shown in FIG. 13, to prepare a new frame laminate 68.

[0151] Also, a new mask 20 is prepared. Then, as shown in Fig. 13, a new adhesive layer 75 is formed on the new mask 20 to produce a new mask 28 with an adhesive layer.

[0152] 13, the release layer 71 of the new frame laminate 68 is joined to the adhesive layer 75 of the new adhesive-layered mask 28 to connect the new mask 20 to the frame 60. In this way, the mask 20 of the mask device 15 is replaced.

[0153] Next, an example of a method for manufacturing the organic device 100 using the mask device 15 will be described.

[0154] First, a substrate 110 on which a first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum film deposition method or the like, and then patterning the conductive layer by a photolithography method or the like. The patterning of the conductive layer may be performed using an apparatus for performing a semiconductor manufacturing process. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0155] Next, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, etc. is formed on the first electrode 120. For example, first, a mask device 15 including a first mask 20 is placed in the vapor deposition device 10, and the first organic layer 130A is formed by vapor deposition using the first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, a mask device 15 including a second mask 20 is placed in the vapor deposition device 10, and the second organic layer 130B is formed by vapor deposition using the second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, a mask device 15 including a third mask 20 is placed in the vapor deposition device 10, and a third organic layer is formed by vapor deposition using the third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer. When the mask device 15 is installed in the vapor deposition apparatus 10 or removed from the vapor deposition apparatus 10, the frame 60 is grasped. This reduces the risk of the first layer 30 being damaged or the second layer 40 being deformed. Furthermore, within the vapor deposition apparatus 10, the frame 60 is supported by the mask holder 9. This reduces the risk of the mask holder 9 interfering with the first opening 31 of the first layer 30 or the second opening 41 of the second layer 40. In other words, this reduces the risk that the mask holder 9 will interfere with the deposition material adhering to the substrate 110.

[0156] Next, the second electrode 140 is formed on the organic layer 130. For example, as shown in FIG. 1 , the second electrode 140 may be formed over the entire first surface 111 by a vacuum film formation method or the like. Alternatively, although not shown, the second electrode 140 may be formed by a vapor deposition method using a mask 20, similar to the organic layer 130. Thereafter, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this manner, the organic device 100 can be obtained.

[0157] A plurality of organic devices 100 may be formed on one substrate 110. One organic device 100 may correspond to one first opening 31 of the mask 20. In this case, a step of cutting the substrate 110 may be performed. For example, the substrate 110 is cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. As a result, a plurality of organic devices 100 can be obtained.

[0158] The effect of the mask 20 when forming the organic layer 130, the second electrode 140, etc. by vapor deposition using the mask 20 will be described.

[0159] The mask 20 includes a first layer 30 containing silicon or a silicon compound. Therefore, when the substrate 110 contains silicon, it is possible to suppress the difference between the thermal expansion of the substrate 110 and the thermal expansion of the mask 20. This prevents the accuracy of the positions, shapes, etc. of the deposited layers, such as the organic layer 130 and the second electrode 140, from being reduced due to the thermal expansion of the mask 20. This makes it possible to provide an organic device 100 with a high element density.

[0160] The mask 20 includes a second layer 40 including a plurality of second openings 41. By providing the second layer 40 separately from the first layer 30, the thickness of the second layer 40 can be reduced, thereby suppressing the occurrence of shadows during the vapor deposition process. Furthermore, by appropriately ensuring the distance S6 between the first wall surface 32 and the second openings 41 in a plan view, the thickness of the first layer 30 can be appropriately ensured while suppressing shadows.

[0161] The above-described embodiment can be modified in various ways. Below, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in modified examples, the description of those effects may be omitted.

[0162] For example, when peeling the mask 20 from the frame 60 of the mask device 15, light such as laser light L2 may be directly irradiated onto the peeling layer 71. In this case, light such as laser light L2 may be incident between the incident surface 201 of the mask 20 and the fifth surface 601 of the frame 60 along the incident surface 201 and the fifth surface 601. In this case, light such as laser light L2 with an intensity sufficient to decompose, evaporate, or deform the peeling layer 71 may be incident on the peeling layer 71.

[0163] The release layer 71 may also be disposed between the mask 20 and the adhesive layer 75. In this case, the release layer 71 may be in contact with the mask 20. In this case, as shown in FIG. 15 , a mask 29 with a release layer 71 formed on the mask 20 and a frame 69 with an adhesive layer 75 formed on the frame 60 may be prepared, and the mask 20 may be connected to the frame 60 by bonding the release layer 71 on the mask 20 to the adhesive layer 75 on the frame 60. In this case, the release layer 71 may be formed circumferentially along the outer edge 303 on the incident surface 201 of the mask 20. The adhesive layer 75 may be formed circumferentially along the edge of the third opening 61 on the fifth surface 601 of the frame 60. The mask 29 with a release layer includes the mask 20 and the release layer 71 laminated on the mask 20. The mask 29 with a release layer is also referred to as a mask laminate 29.

[0164] 16 , a step portion 65 may be provided on the inner periphery of the frame 60. The step portion 65 is recessed in a direction from the fifth surface 601 toward the sixth surface 602. The step portion 65 is formed by a surface 651 that extends from the inner edge 604 of the frame 60 toward the outer edge 603, and a surface 652 that extends in the thickness direction of the frame 60. The surface 652 constitutes a part of the fifth surface 601. The surface 652 connects the remaining part of the fifth surface 601 to the surface 651. The surface 652 constitutes a part of the inner surface (inner periphery) of the frame 60. The distance between the surface 651 and the sixth surface 602 is smaller than the distance between the remaining part of the fifth surface 601 and the sixth surface 602. In this case, the outer edge 303 of the first layer 30 on the first surface 301 side may be accommodated in the step portion 65, more specifically, in the space defined by the surface 651 and the surface 652. In this case, the outer edge 303 of the first layer 30 is surrounded by the frame 60. As a result, the risk of damage to the outer region 35 of the first layer 30 is more effectively suppressed.

[0165] When the frame 60 is provided with a step portion 65, the connection layer 70 may be disposed between the surface 651 and the first surface 301, as shown in FIGS.

[0166] 20 , when the frame 60 has a step portion 65, the connecting layer 70 may be disposed not only between the frame 60 and the first surface 301 but also between the frame 60 and the outer edge 303. As a result, the frame 60 and the first layer 30 can be more firmly connected. In this case, the frame laminate 68 may include the frame 60 and a release layer 71 formed on the surfaces 651 and 652 of the frame 60. Alternatively, the mask laminate 29 may include the mask 20 and a release layer 71 formed on the first surface 301 and the outer edge 303 of the outer region 35 of the first layer 30.

[0167] Alternatively, when the frame 60 has a step portion 65, as shown in FIG. 21 , the connecting layer 70 may not be disposed between the frame 60 and the first surface 301, but may be disposed only between the frame 60 and the outer edge 303. In this case, since the connecting layer 70 is not disposed between the frame 60 and the first surface 301, it is not necessary to adjust the thickness of the connecting layer 70 to make the frame 60 and the second layer 40 parallel. When the connecting layer 70 is disposed only between the frame 60 and the outer edge 303, the frame laminate 68 may include the frame 60 and a release layer 71 formed on the surface 652 of the frame 60. Alternatively, the mask laminate 29 may include the mask 20 and a release layer 71 formed on the outer edge 303 of the first layer 30.

[0168] Furthermore, when the frame 60 is provided with the step portion 65, the fifth surface 601 of the frame 60 may be flush with the fourth surface 402. In this case, too, when a deposition layer is formed on the substrate 110 or components on the substrate 110 through the mask 20, the second layer 40 can be brought into contact with the substrate 110 or components on the substrate 110.

[0169] 20 and 21 , light such as laser light L2 may be incident from the exit surface 202 side of the mask 20 onto a space between the outer edge 303 of the mask 20 and the surface 652 of the frame 60. In this case, light such as laser light L2 can be directly irradiated onto the peeling layer 71.

[0170] 16 and 18 , grooves 90 may be formed on the surface 651 of the frame 60 facing the release layer 71. In this case, gas generated in the release layer 71 upon irradiation with light such as laser light L2 can be accommodated in the grooves 90. In other words, the gas generated in the release layer 71 can be promoted to migrate from the release layer 71. In particular, when the mask 20 is accommodated in the step portion 65 as shown in FIGS. 16 and 18 , it is more difficult to release the gas generated in the release layer 71 from between the mask 20 and the frame 60 than in the case shown in FIG. 6 . If the gas remains in the release layer 71, decomposition and evaporation of the release layer 71 may be inhibited. By moving the gas generated in the release layer 71 from the release layer 71 and accommodating it in the grooves 90, the decomposition and evaporation of the release layer 71 can be promoted, and the release of the mask 20 from the frame 60 can be promoted.

[0171] FIG. 17 is a plan view of the frame 60 shown in FIG. 16 . In the example shown in FIG. 17 , the grooves 90 are formed radially. FIG. 19 is a plan view of the frame 60 shown in FIG. 18 . In the example shown in FIG. 19 , some grooves 90 a extend in the thickness direction of the frame 60. Other grooves 90 b are formed radially. The grooves 90 may have any shape. The grooves 90 a and 90 b may have a cylindrical or polygonal prism shape. Alternatively, the grooves 90 a and 90 b may have a wedge shape whose diameter decreases toward the bottom. The grooves 90 may be open on a surface of the frame 60 other than the surface 651. In this case, gas contained in the grooves 90 can be discharged from between the mask 20 and the frame 60 to the outside of the mask device 15. Therefore, the grooves 90 a and 90 b may be through-holes.

[0172] Furthermore, the connecting layer 70 may not include the adhesive layer 75. In this case, the mask 20 and the frame 60 may be connected by a release layer 71. The release layer 71 may be in contact with the incident surface 201 of the mask 20 and the fifth surface 601 of the frame 60.

[0173] Fig. 24 is a cross-sectional view showing a modified example of the mask device 15. In the example shown in Fig. 24, the connection layer 70 includes a release layer 71 but does not include an adhesive layer 75. The release layer 71 functions as a layer that decomposes, evaporates, or deforms when irradiated with light, and also functions as a layer that adheres the mask 20 and the frame 60 together.

[0174] 24, the release layer 71 includes, for example, an adhesive, such as a photocurable adhesive or a thermosetting adhesive.

[0175] When the connecting layer 70 does not include the adhesive layer 75, the release layer 71 is located between the first surface 301 of the mask 20 and the fifth surface 601 of the frame 60 in the attachment step of attaching the frame 60 to the mask 20. The upper surface of the release layer 71 may be in contact with the first surface 301, and the lower surface of the release layer 71 may be in contact with the fifth surface 601.

[0176] When the release layer 71 contains a photocurable adhesive, the release layer 71 may be irradiated with light having a first intensity in the attachment step. The first intensity is greater than a first threshold intensity and less than a second threshold intensity. The first threshold intensity is an intensity necessary to cause a polymerization reaction in an initiator contained in the photocurable adhesive. The second threshold intensity is an intensity necessary to cause decomposition, evaporation, or deformation in the release layer 71 in the irradiation step. In the irradiation step, the release layer 71 may be irradiated with light having a second intensity greater than the second threshold intensity.

[0177] If the release layer 71 contains a thermosetting adhesive, the release layer 71 may be heated to a temperature higher than a first threshold temperature in the attaching step. The first threshold temperature is a temperature required to cause a polymerization reaction of an initiator contained in the thermosetting adhesive. In the irradiating step, the release layer 71 may be irradiated with light having a second intensity higher than the above-mentioned second threshold intensity.

[0178] Examples of adhesives contained in the release layer 71 in the example shown in Figure 24 include acrylic resin, urethane resin, and silicone resin. These resins may function as photocurable adhesives or as thermosetting adhesives. The release layer 71 may be made of one type of resin or may contain two or more types of resins. For example, the release layer 71 may contain acrylic resin and urethane resin.

[0179] Furthermore, the mask 20 may not include the intermediate layer 50 between the first layer 30 and the second layer 40. In this case, the second surface 302 of the first layer 30 and the third surface 401 of the second layer 40 may be directly connected to each other.

[0180] Alternatively, the second opening 41 may be formed in the second layer forming step. For example, as shown in FIG. 22A , after the intermediate layer forming step and before the second layer forming step, an insulating layer 55 is formed on the intermediate layer 50. The insulating layer 55 is made of tetraethyl silicate Si(OC ２ H ５ ) ４ The insulating layer 55 may be formed by a chemical vapor deposition method using a material other than the insulating layer 55 as a raw material. Next, as shown in FIG. 22B , the insulating layer 55 is partially removed by dry etching or the like, and a plurality of insulating protrusions 56 are formed on the intermediate layer 50 in a pattern corresponding to the second openings 41. The insulating protrusions 56 are formed at positions on the intermediate layer 50 that overlap the second openings 41 in a plan view. Next, as shown in FIG. 22C , a plating process is performed on the intermediate layer 50 on which the insulating protrusions 56 have been formed. As a result, the second openings 41 can be formed in the second layer 40 simultaneously with the formation of the second layer 40.

[0181] In the above embodiment, an example has been described in which the mask device 15 including the mask 20 and the frame 60 is cleaned, but the specific cleaning method is arbitrary. For example, the mask 20 and the frame 60 may be cleaned separately after the mask 20 is peeled off from the frame 60 by the irradiation process. The cleaning of the mask 20 and the cleaning of the frame 60 may be performed in the same place or in different places.

[0182] The mask 20 that has been peeled off from the frame 60 and cleaned may be reconnected to the frame 60 .

[0183] After the mask 20 is peeled off from the frame 60 by the irradiation process, only the frame 60 may be cleaned. A new mask 20 may then be connected to the frame 60.

[0184] 23 is a diagram showing an example of an apparatus 200 including an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal may be smart glasses, a head-mounted display, or the like.

[0185] It is also possible to combine the multiple components disclosed in the above-described embodiments and modifications as needed, or to delete some of the components disclosed in the above-described embodiments and modifications.

Claims

1. A mask device comprising: a mask; a frame; and a connecting layer disposed between the mask and the frame and connecting the mask and the frame, wherein the mask comprises: a first layer including a first surface, a second surface located opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a plan view; and a second layer including a third surface opposite the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, wherein the first layer comprises silicon or a silicon compound, the frame is connected to the outer edge of the first layer and / or the first surface of the outer region of the first layer, and at least a portion of the frame extends beyond the outer edge of the first layer in a plan view, the frame comprises glass or metal, and the connecting layer includes a release layer. The mask device, wherein the peelable layer decomposes, evaporates, or deforms when irradiated with light.

2. The mask apparatus of claim 1, wherein the connecting layer further comprises an adhesive layer.

3. The mask device according to claim 2, wherein the adhesive layer includes a glass material, an inorganic material, a metal material, or a resin material.

4. The mask apparatus of claim 2, wherein the release layer is disposed between the adhesive layer and the frame.

5. The mask apparatus of claim 2, wherein the release layer is disposed between the adhesive layer and the mask.

6. The mask device according to claim 1, wherein the frame includes a fifth surface facing the same side as the fourth surface, a sixth surface located on the opposite side of the fifth surface, and a third opening that penetrates from the fifth surface to the sixth surface and overlaps with the first opening in a plan view.

7. The mask apparatus of claim 1, wherein said frame is formed with a stepped portion that accommodates said outer edge of said first layer.

8. The mask device according to claim 1, wherein a groove is formed on the surface of the frame facing the release layer.

9. The mask device according to claim 1, wherein the portion of the frame that overlaps the release layer in a plan view has a light transmittance of 80% or more in the thickness direction.

10. A mask laminate connected to a frame, comprising: a mask; and a release layer laminated on the mask, wherein the mask is connected to the frame via the release layer, and the mask comprises: a first layer including a first surface, a second surface located opposite the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a planar view; and a second layer including a third surface opposite the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view, wherein the first layer comprises silicon or a silicon compound, and the release layer is formed on the outer edge of the first layer and / or on the first surface of the outer region of the first layer, and is decomposed, evaporated, or deformed when irradiated with light.

11. A frame laminate connected to a mask containing silicon or a silicon compound, comprising: a frame; and a release layer laminated on the frame, wherein the frame is connected to the mask via the release layer, the frame comprises glass or metal, and the release layer is formed on a surface facing one side and / or a side surface of the frame, and is decomposed, evaporated, or deformed when irradiated with light.

12. A frame laminate according to claim 11, wherein the frame has an opening penetrating through it in the thickness direction, and the release layer is formed on a surface facing one side and / or an inner surface of the frame.

13. The frame laminate of claim 11, wherein the frame is formed with a stepped portion that accommodates at least a portion of the mask.

14. The frame laminate of claim 11, wherein a groove is formed on the surface facing the release layer.

15. The frame laminate according to claim 11, wherein the portion of the frame that overlaps the release layer in a plan view has a light transmittance of 80% or more in the thickness direction.

16. A method for replacing a mask in a mask device according to any one of claims 1 to 9, comprising: an irradiation step of irradiating the peeling layer with light to decompose, evaporate or deform the peeling layer; a peeling step of peeling the mask from the frame after the irradiation step; a mask preparation step of preparing a new mask; a connection layer formation step of forming a new connection layer on the frame and / or the new mask after the peeling step and the mask preparation step; and a connection step of connecting the frame to the new mask via the new connection layer.

17. The replacement method described in claim 16, wherein the frame includes a fifth surface facing the same side as the fourth surface and a sixth surface located on the opposite side of the fifth surface, the portion of the frame that overlaps the peeling layer in a planar view has a light transmittance in the thickness direction of 80% or more, and in the irradiation step, light is irradiated onto the sixth surface, causing the light to enter the peeling layer through the frame.

18. A method for manufacturing an organic device, comprising the step of forming an organic layer on a substrate by a vapor deposition method using the mask apparatus according to any one of claims 1 to 9.

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