Luminophore, optoelectronic component, method for producing a luminophore, turn signal light, road and street lighting

Abstract

The invention relates to a luminophore (1) having the general formula EA3-3 / 2u-x-w-zSE1+u+xT6-y-x+zDy+x-zN11-y-2wOy+2w:A, wherein - EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of rare earth elements or combinations thereof, - T is selected from the group of tetravalent elements or combinations thereof, - D is selected from the group of trivalent elements or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof, - 2*(3-3 / 2u-x-w-z) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+x-z) – 3*(11-y-2w) – 2*(y+2w) = 0, - 0 ≤ y+x-z ≤ 6, - 0 ≤ y+2w ≤ 11, and - if u+x > 0, then w ≤ 0 and z ≤ 0; or - if u+x = 0, then w > 0 or z > 0. The invention also relates to an optoelectronic component (10), a method for producing a luminophore (1), a turn signal light (17) and road and street lighting (18).

Description

[0001] 2023PF01484 13 March 2025P2023,1444 WO N - 1 -Description: Fluorescent substance, optoelectronic component, method for producing a fluorescent substance, turning signal light, street lighting. A fluorescent substance and an optoelectronic component are specified. Furthermore, a method for producing a fluorescent substance, a turning signal light, and street lighting are specified. One object is to provide a fluorescent substance with increased efficiency. Furthermore, the fluorescent substance enables better light quality at high irradiance in fluorescent solutions or applications. Further objects are to provide a method for producing such a fluorescent substance with increased efficiency and an optoelectronic component with increased efficiency at high irradiance. Furthermore, this fluorescent substance is intended to be used in a turning signal light and / or street lighting. A fluorescent substance is specified.According to at least one embodiment, the phosphor has the general formula: EA3-3 / 2u-xw-zSE1+u+xT6-y-x+zDy+x-zN11-y-2wOy+2w:A, where: - 2*(3-3 / 2u-xwz) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+xz) - 3*(11-y-2w) - 2*(y+2w) = 0, - 0 ≤ y+xz ≤ 6, - 0 ≤ y+2w ≤ 11, and - if u+x > 0, then w ≤ 0 and z ≤ 0; or- if u+x = 0, then w > 0 or z > 0.2023PF01484 March 13, 2025P2023,1444 WO N -. 2 -According to at least one embodiment, EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof. According to at least one embodiment of the phosphor, SE is selected from the group of rare earth elements or combinations thereof. Rare earth elements in the present case include the chemical elements of the third subgroup of the periodic table as well as the lanthanides. Rare earth elements in the present case are generally selected from the group formed by scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium. According to at least one embodiment, T is selected from the group of tetravalent elements or combinations thereof. In particular, T is selected from the group formed by Si, Ge, Sn, Ti, Zr or combinations thereof. For example, T comprises silicon.The term "valence" in relation to a specific element refers to how many elements with a singly opposite charge are needed in a chemical compound to achieve charge balance. Thus, the term "valence" encompasses the element's charge number. Tetravalent elements are elements with a valence of four. Tetravalent elements are often four times positively charged in chemical compounds and have a charge number of +4. Charge balance in a chemical compound can, for example, be achieved by one element that is four times negatively charged and two elements that are doubly negatively charged. 3 -or four elements that are singly negatively charged. According to at least one embodiment, D is selected from the group of trivalent elements or combinations thereof. In particular, D is selected from the group formed by B, Al, Ga, In or combinations thereof. For example, D comprises aluminum. Trivalent elements are elements with a valence of three. Trivalent elements are often triple positively charged in chemical compounds and have a charge number of +3. Charge balancing in a chemical compound can take place, for example, via an element that is triple negatively charged or via three elements that are singly negatively charged. According to at least one embodiment, A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof. According to at least one embodiment of the phosphor, A is an activator element.The activator element changes the electronic structure of the host lattice in that electromagnetic radiation is absorbed by the phosphor and excites an electronic transition in the activator element, which returns to the ground state while emitting electromagnetic radiation. The activator element, which is incorporated into the host lattice, is thus responsible for the wavelength-converting properties of the phosphor.2023PF01484 March 13, 2025P2023,1444 WO N -. 4 -The absorption of electromagnetic radiation can be represented in the form of an excitation spectrum, and the transition from the excited state to the ground state with the emission of electromagnetic radiation in the form of an emission spectrum. The term "wavelength-converting" in this context means that radiated electromagnetic radiation of a specific wavelength range—in this case, the excitation spectrum or first wavelength range—is converted into electromagnetic radiation of another, preferably longer wavelength range—in this case, the emission spectrum or second wavelength range.As a rule, a wavelength-converting component absorbs electromagnetic radiation of an incident wavelength range, converts it through electronic processes at the atomic and / or molecular level into electromagnetic radiation of a different wavelength range, and re-emits the converted electromagnetic radiation. In particular, pure scattering or pure absorption is not understood here as wavelength-converting. Here and below, phosphors are described using molecular formulas. The elements listed in the molecular formulas are present in charged form. Here and below, elements and / or atoms, with reference to the molecular formulas of the phosphors, thus refer to ions in the form of cations and anions, even if this is not explicitly stated. This also applies to element symbols, if these are given without a charge number for the sake of clarity.2023PF01484 March 13, 2025P2023,1444 WO N -.5 - With the given molecular formulas, it is possible that the phosphor contains further elements, for example in the form of impurities. These impurities together amount to a maximum of 5 mol%, in particular a maximum of 1 mol%, preferably a maximum of 0.1 mol%. The phosphor is generally uncharged externally. This means that a complete charge balance between positive and negative charges can exist within the phosphor. However, it is also possible that the phosphor formally does not have a complete charge balance to a small extent. Reasons for this include impurities. According to at least one embodiment, the phosphor comprises a mixture. The mixture comprises, for example, the general formula EA. 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11-y- 2w O y+2w:A. Further components of the mixture may be, for example, reactants that did not react during the preparation of the phosphor, impurities and / or secondary phases that are formed during the reaction. According to at least one embodiment, the phosphor has the general formula EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11-y-2w O y+2w :A, where - EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of rare earth elements or combinations thereof, - T is selected from the group of tetravalent elements or combinations thereof, - D is selected from the group of trivalent elements or combinations thereof, 2023PF01484 March 13, 2025P2023,1444 WO N - 6 -- A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof,- 2*(3-3 / 2u-xwz) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+xz) –3*(11-y-2w) – 2*(y+2w) = 0,- 0 ≤ y+xz ≤ 6,- 0 ≤ y+2w ≤ 11, and- if u+x > 0, then w ≤ 0 and z ≤ 0; or- if u+x = 0, then w > 0 or z > 0.According to at least one embodiment of the phosphor, if u+x > 0, then w ≤ 0 and z ≤ 0; or if u+x = 0, then w > 0 or z > 0. This means that the proportion of rare earth elements in the phosphor is greater than or equal to 1, depending on the framework-forming elements. In particular, the proportion of Y, Lu, or La is greater than or equal to 1. According to at least one embodiment of the phosphor, 3-3 / 2u-xwz > 0. In other words, EA is present in the phosphor. According to at least one embodiment, -1 < (-1 / 2u-wz) ≤ 0, in particular -0.9 < (-1 / 2u-wz) ≤ 0.According to at least one embodiment, the phosphor obeys the formula (EA,SE)4(Si,Al)6(N,O) in another notation. 11 :A, where EA and SE are selected from the following group: Ba, Y, Ca, Mg, Lu, La, Sr, and combinations thereof. SE has a proportion of greater than or equal to 1. A is preferably Ce3+.2023PF01484 March 13, 2025P2023,1444 WO N - 7 - According to at least one embodiment, A comprises cerium or consists of this element. Cerium is in particular in the form Ce 3+Preferably, A represents the element cerium. In Eu-activated phosphors, quenching occurs even at low irradiances of around 100 mW / mm², which can lead to a reduction in quantum efficiency. Quenching here and in the following refers to the presence of processes that lead to the absorption of a photon in the first wavelength range, but without the subsequent emission of a photon in the second wavelength range or emission spectrum. The photon in the first wavelength range does not trigger transitions in the visible spectral range, but is converted into lattice vibrations. This leads to a reduction in efficiency. Quenching can be caused, for example, by internal conversion or energy transfer, for example, to the host lattice. Conventional applications of phosphors sometimes operate at significantly higher irradiances than 100 mW / mm². 2 . Phosphors containing Ce 3+as an activator element, show lower quenching even at higher irradiances. Therefore, the use of Ce 3+ advantageous as activator element A. An excited state of Ce 3+ has a typical lifetime of usually less than 100 nanoseconds. The typical lifetime of the excited state of Eu 2+ However, the quenching time is usually in the range of 1 to 10 microseconds. Due to the shorter lifetime of the excited state of Ce, a phosphor with Ce as the activator element exhibits lower quenching at high irradiances. For example, the conventional phosphor Y3Al5O 12 :Ce 3+ Only above an irradiance of 10 W / mm² does significant radiation-induced quenching occur. The use of conventional phosphors (Sr,Ba)Si2O2N2:Eu 2+ or β-SiAlON:Eu 2+is also limited to low irradiances. The maximum emission is reached at approximately 0.7 W / mm2 irradiance due to saturation and quenching effects. For the orange to deep red 2023PF01484 13 March 2025P2023,1444 WO N - 8 - Spectral range is Eu 2+ -activated phosphors are used, e.g. the systems (Ca,Sr,Ba)2Si5N8:Eu 2+ and (Ca,Sr)AlSiN3:Eu 2+ widely used. With the system (Ca,Sr,Ba)2Si5N8:Eu 2+ Dominant wavelengths of λ > 580 nm are usually achievable, with 2+dom (Ca,Sr)AlSiN3:Euλdom > 587 nm. The orange α-SiAlONs also usually realize dominant wavelengths above λdom > 580 nm. Phosphor solutions using these Eu 2+-activated phosphors are thus limited to use at low irradiances. According to at least one embodiment of the phosphor, A has a molecular fraction of between 0.01% and 30% inclusive, based on EA and SE. In other words, between 0.01% and 30% inclusive of the atomic positions of EA and / or SE are coated with the element A. Preferably, A has a molecular fraction of between 0.01% and 15% inclusive, based on EA and SE. Particularly preferably, A has a molecular fraction of between 0.01% and 5% inclusive, based on EA and SE. According to at least one further embodiment, EA comprises magnesium, barium, calcium, and / or strontium. For example, EA consists of magnesium, barium, calcium, and / or strontium. In particular, EA comprises barium. Barium is in particular in the form Ba 2+According to at least one further embodiment, sey comprises ttrium, lanthanum, lutetium. The yttrium, lanthanum, and lutetium are in particular in the form Y 3+ , La 3+ or Lu 3+ For example, RE consists of yttrium, lanthanum and / or lutetium.2023PF01484 13 March 2025P2023,1444 WO N - 9 - According to at least one embodiment, T comprises silicon and / or D aluminum. For example, the phosphor has the general formula:EA 3-3 / 2u-x-w-z SE 1+u+x Si 6-y-x+z Al y+x-z N 11-y-2w O y+2w :A, where:- 2*(3-3 / 2u-xwz) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+xz) –3*(11-y-2w) – 2*(y+2w) = 0,- 0 ≤ y+xz ≤ 6,- 0 ≤ y+2w ≤ 11, and- if u+x > 0, then w ≤ 0 and z ≤ 0; or- if u+x = 0, then w > 0 or z > 0. According to at least one embodiment, the phosphor has the formula EA3-3 / 2u-xSE1+u+xSi6-y-xAly+xN11-yOy:A with - 0 ≤ y ≤ 11, or the phosphor has the formula EA3-3 / 2u-xSE1+u+xSi6-y-xAly+xN11-yOy:A with- 2*(3-3 / 2u-x) + 3*(1+u+x) + 4*(6-xy) + 3*(y+x) – 3*(11-y) – 2*y=0,- 0 ≤ 3 / 2u+x ≤ 3,- 0 ≤ y+x ≤ 6,- 0 ≤ y ≤ 11, and- -1 < (-1 / 2u) ≤ 0, in particular -0.9 < (-1 / 2u) ≤ 0 or the phosphor has the formula EA3-3 / 2u-x-zSE1+u+xSi6-x+zAlx-zN11:A with- 2*(3-3 / 2u-xz) + 3*(1+u+x) + 4*(6-x+z) + 3*(xz) – 33 =0,- 0 ≤ 3 / 2u+x+z ≤ 3,- 0 ≤ xz ≤ 6, or the phosphor has the formula EA3-3 / 2u-x-zSE1+u+xSi6-x+zAlx-zN11:A with2023PF01484 March 13, 2025P2023,1444 WO N - 10 - - 2*(3-3 / 2u-xz) + 3*(1+u+x) + 4*(6-x+z) + 3*(xz) – 33 =- 0 ≤ 3 / 2u+x+z ≤ 3,- 0 ≤ xz ≤ 6, and- -1 < (-1 / 2u-z) ≤ 0, in particular 0.9 < (-1 / 2u-z) ≤ 0.According to at least one further embodiment, the phosphor has at least one of the following formulas: EA3- 3 / 2u SE 1+u Si6N 11 :A, where u > 0; EA 3-w SESi6N 11-2w O 2w :A, where w > 0; EA3SESi 6-y Aly N 11-y O y :A, where y > 0; EA 3-x SE 1+x Si 6- x Al x N 11 :A, where x > 0; EA 3-z SESi 6-t+z Al t-z N 11-t O t :A, where t ≥ z and z > 0, EA 3-3 / 2u SE 1+u Si6N 11 :A where -1 < (-1 / 2u) ≤ 0, in particular -0.9 < (-1 / 2u) ≤ 0, EA3-wSESi6N11-2wOw:A, where -1 < (-w) ≤ 0, in particular -0.9 < (-w) ≤ 0, EA 3-z SESi 6- t+z Al t-z N 11-t O t :A, where -1 < (-z) ≤ 0, in particular -0.9 < (-z) ≤ 0. The formulas EA 3-3 / 2u SE 1+u Si6N 11 :A and EA 3-w SESi6N 11- 2w O 2w :A, (Ba,Y)4Si6(N,O) 11 :Ce 3+ have no aluminum content. The formula EA3SESi 6-y Al y N 11-y O y :A has an aluminum content and a RE content equal to 1. The formula EA 3-x SE 1+x Si6-x Al x N 11 :A has an aluminum content and a SE content greater than 1. According to at least one further embodiment, the phosphor has one of the following formulas: Ba 0,6 La 2,8 Ca 0,3 Si 4,8 Al 1,2 N 11 :Ce 3+ ; BaLu3Si4Al2N 11 :Ce 3+ and / or (Ba,Y)4(Si,Al)6(O,N) 11 :Ce 3+ In particular, the formula (Ba,Y)4(Si,Al)6(O,N) 11 :Ce 3+ the proportion of Y is greater than or equal to 1. The proportion of aluminum in the phosphor formula (Ba,Y)4(Si,Al)6(O,N) is preferably 11 :Ce 3+ greater than zero. For example, the phosphor (Ba,Y)4(Si,Al)6(O,N) 11 :Ce 3+ the formula Ba 2.5 Y 1.5 Si 5.5 Al 0.5 N 11 :Ce 3+ and / or Ba 3+2Y2Si5AlN11:Ce on.2023PF01484 13 March 2025P2023,1444 WO N - 11 -According to at least one further embodiment, y+xz > 0. This means that the phosphor EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-zN11-y-2wOy+2w:A has a proportion of trivalent elements, in particular aluminum. This achieves a broad half-width of the electromagnetic radiation emitted by the phosphor with a blue emission or a broad orange emission. According to at least one embodiment, the phosphor has a host lattice comprising a structure with a cubic space group. In particular, the phosphor comprises a crystalline host lattice. The phosphor is, for example, a ceramic material. The crystalline host lattice is generally composed in particular of a three-dimensionally periodically repeating unit cell. In other words, the unit cell is the smallest recurring unit of the crystalline host lattice, reflecting the symmetry of the crystal.The elements EA, SE, T, D, N, O, and A each preferentially occupy specific, symmetrical positions, so-called atomic positions, within the three-dimensional unit cell of the host lattice. According to at least one embodiment, the phosphor crystallizes in the cubic space group P213. This corresponds to the number 198. To describe the three-dimensional unit cell of the crystalline host lattice, six lattice parameters are required: three lengths a, b, and c, and three angles α, β, and γ. The three lattice parameters a, b, and c are the lengths of the lattice vectors that span the unit cell. 2023PF01484 March 13, 2025P2023,1444 WO N -. 12 -The three further lattice parameters α, β, and γ are the angles between these lattice vectors. Α is the angle between b and c, β is the angle between a and c, and γ is the angle between a and b. For example, the lattice parameter a is 10.411(1) Å or 10.417 Å. According to at least one further embodiment, the structure is isotypic to the compounds (Ba,Eu)3YbSi6N 11 and Ba 1,8 Ca 2,2 Si6N 10O. According to at least one embodiment, the phosphor absorbs electromagnetic radiation in the near ultraviolet to yellow spectral range. In particular, the phosphor emits secondary radiation in the blue to orange spectral range. According to at least one further embodiment, the phosphor is excitable between 250 nm and 700 nm inclusive. For this embodiment, the phosphor preferably has an excitation maxima at λexc = 295 nm, 375 nm, and 525 nm. These excitation maxima are preferably achieved at an emission wavelength λem = 575 nm. Other wavelengths for exciting the phosphor are conceivable. According to at least one embodiment of the phosphor, the phosphor emits electromagnetic radiation. The emitted electromagnetic radiation can be described in the form of an emission spectrum.The emission spectrum exhibits an emission peak with an emission maximum that lies between 400 nanometers and 700 nanometers. For example, the emission maximum of the phosphor with an excitation of 448 nm is between 450 nm and 605 nm. At an excitation wavelength of 408 nm, the emission peak is 2023PF01484 March 13, 2025P2023,1444 WO N -. 13 - The emission maximum is in a range between 440 nm and 600 nm. For example, the phosphor Ba3-3 / 2u-xw-zY1+u+xSi6-yx-t+zAly+x+t-zN11-y-2w-tOy+2w+t:A, when it contains aluminum, depending on the exact composition, emits at an excitation wavelength of 448 nm with an emission maximum of λmax approximately 460 nm, usually in combination with a broader side peak at λmax approximately 595 nm. The phosphor EA3-3 / 2u-xw- z SE 1+u+x T 6-y-x+z D y+x-z N 11-y-2w O y+2w:A, for example (Ba,Y) Si ( 3+4 6 N,O)11:Ce , without the addition of aluminum, exhibits, for example, an emission maximum of λmax at approximately 575 nm. The emission spectrum is the intensity distribution of the electromagnetic radiation emitted by the phosphor after excitation with electromagnetic radiation of the first wavelength range. The emission spectrum is usually represented in the form of a diagram in which a spectral intensity or a spectral radiant flux per wavelength interval (“spectral intensity / spectral radiant flux”) of the electromagnetic radiation emitted by the phosphor is represented as a function of the wavelength λ. In other words, the emission spectrum represents a curve in which the wavelength is plotted on the x-axis and the spectral intensity or the spectral radiant flux is plotted on the y-axis. According to at least one embodiment, a dominant wavelength (λ Dom) of the electromagnetic radiation emitted by the phosphor between 400 nm and 650 nm. Preferably, the dominant wavelength is between 460 nm and 600 nm. For example, the 2023PF01484 March 13, 2025P2023,1444 WO N - 14 - Phosphor, in this case Ba3-3 / 2u-xw-zY1+u+xSi6-y-x+zAly+x-zN11-y- 2w O y+2w :A, if it contains aluminum, depending on the exact composition, with a dominant wavelength of λ dom about 480 nm and an emission maximum of λmax about 460 nm. In addition to the narrow main peak at λmax about 460 nm, another broad secondary peak often occurs at λmax about 595 nm. For example, the phosphor, in this case Ba3-3 / 2u-xw-zY1+u+xSi6-y-x+zAly+x-zN11-y-2wOy+2w:A, has a dominant wavelength of λdom about 580 nm and an emission maximum of λmax about 587 nm. The phosphor, in this case Ba3-3 / 2u-xw-zY1+u+xSi6-y- x+z Al y+x-z N 11-y-2w O y+2w:A, for example (Ba,Y)4Si6(N,O) 11 :Ce 3+ , without the addition of aluminum, shows a dominant wavelength of λ dom between 570 nm and 590 nm inclusive, preferably between 576 nm and 586 nm inclusive and an emission maximum between 560 nm and 580 nm inclusive, preferably between 567 nm and 574 nm inclusive. According to at least one embodiment, a dominant wavelength (λ Dom ) of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 448 nm is between 500 nanometers and 650 nanometers inclusive. For example, the dominant wavelength at an excitation wavelength of 448 nm is between 545 nm and 600 nm inclusive. The dominant wavelength can be adjusted by the precise composition of the phosphor. According to at least one embodiment, a dominant wavelength (λ Dom) of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 408 nanometers between 430 nanometers and 5202023PF01484 13 March 2025P2023,1444 WO N - 15 -Nanometers. For example, with an excitation wavelength of 408 nm, the dominant wavelength lies between 460 nm and 490 nm inclusive. To determine the dominant wavelength of the electromagnetic radiation emitted by the phosphor, a straight line is drawn in the CIE standard diagram, starting from the white point and passing through the color coordinate of the electromagnetic radiation. The intersection of the straight line with the spectral color line delimiting the CIE standard diagram denotes the dominant wavelength of the electromagnetic radiation. In other words, the dominant wavelength is the monochromatic wavelength that produces the same color impression as a polychromatic light source. The dominant wavelength is therefore the wavelength perceived by the human eye. In general, the dominant wavelength deviates from the wavelength of the emission maximum.According to at least one preferred embodiment, a half-width of the electromagnetic radiation emitted by the phosphor is between 70 nm and 190 nm inclusive. The half-width of the electromagnetic radiation emitted by the phosphor is preferably between 80 nm and 170 nm inclusive. According to at least one preferred embodiment, a half-width of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 448 nm is between 90 nm and 190 nm inclusive. The half-width of the electromagnetic radiation emitted by the phosphor is preferably 2023PF01484 March 13, 2025 P2023,1444 WO N -. 16 -an excitation wavelength of 448 nm between 110 nm and 170 nm inclusive. According to at least one preferred embodiment, a half-width of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 448 nm is between 100 and 200 nm inclusive. Preferably, a half-width of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 448 nm is between 120 nm and 180 nm inclusive. For example, a half-width of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 448 nm is 168 nm.For example, if the phosphor contains an element D, depending on the exact composition, it emits with a dominant wavelength of λdom of approximately 480 nm and an emission maximum of λmax of approximately 460 nm at a half-width FWHM of approximately 90 nm, or with λdom of approximately 580 nm and an emission maximum of λmax of approximately 587 nm at a half-width FWHM of approximately 154 nm. In addition, in addition to the narrow main peak at λmax of approximately 460 nm, another broad secondary peak at λmax of approximately 595 nm often occurs. This is not taken into account when calculating the half-width, so the effective half-width of both peaks together is wider. The phosphor, without the addition of element D, for example, shows a narrower half-width and emits with a dominant wavelength λdom between 570 nm and 590 nm inclusive and an emission maximum λ. maxbetween 560 nm and 580 nm inclusive with a half-width FWHM between 115 nm and 2023PF01484 13 March 2025P2023,1444 WO N - 17 -inclusive of 140 nm or between inclusive of 0.430 eV and inclusive of 0.5 eV. According to at least one preferred embodiment, a half-width of the electromagnetic radiation emitted by the phosphor, for example at an excitation wavelength of 408 nm, is between inclusive of 70 nm and inclusive of 110 nm. Preferably, a half-width of the electromagnetic radiation emitted by the phosphor, for example at an excitation wavelength of 408 nm, is between inclusive of 80 nm and inclusive of 110 nm. Depending on the composition of the phosphor, up to eight emission peaks can occur. The half-width can therefore also be narrower or wider than described in the previous embodiments.The term half-width preferably refers to a curve with a maximum, such as the emission spectrum, where the half-width is the width of the region on the x-axis corresponding to the two y-values ​​that correspond to half the maximum. Alternatively, multiple emission peaks can occur in the emission spectrum. The additional emission peaks are not included in the calculation of the half-width if the intensity of the emission minimum between the two emission peaks is less than 50%. The phosphor can convert UV to yellow primary radiation into radiation in the blue to red wavelength range. The wavelength of the emitted light depends on the exact composition of the compound and can be shifted by changing the cation and anion ratio. The phosphor is particularly suitable for 2023PF01484 March 13, 2025P2023,1444 WO N -. 18 -Use at higher irradiances due to the lower flux quenching compared to Eu-doped phosphors. Furthermore, an optoelectronic component is specified. The phosphor is particularly suitable and intended for use in an optoelectronic component. Features and embodiments that are implemented solely in connection with the phosphor and / or the method can also be implemented in the optoelectronic component, and vice versa. According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a semiconductor chip that, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface. The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip.The semiconductor chip preferably has an epitaxially grown semiconductor layer sequence with an active zone configured to generate electromagnetic radiation. For this purpose, the active zone has, for example, a pn junction, a double heterostructure, a single quantum well, or particularly preferably a multiple quantum well structure. During operation, the semiconductor chip preferably emits electromagnetic radiation from the ultraviolet spectral range and / or from the visible spectral range, particularly preferably from the blue spectral range.2023PF01484 March 13, 2025P2023,1444 WO N -. 19 -According to a further embodiment, the optoelectronic component comprises a conversion element with a phosphor described here, which converts electromagnetic radiation of the first wavelength range and / or a further wavelength range into electromagnetic radiation of the emission spectrum. The first wavelength range preferably lies within the excitation spectrum of the phosphor. The phosphor converts electromagnetic radiation of the first wavelength range and / or a further wavelength range completely or partially into electromagnetic radiation of the emission spectrum. The further wavelength range is emitted, for example, by a further phosphor. The phosphor then converts the further wavelength ranges completely or partially into electromagnetic radiation of the emission spectrum.In addition to the phosphor described here, the conversion element comprises, for example, a matrix material in which the phosphor is embedded in the form of particles. The matrix material is preferably selected from the group of silicones, polysiloxanes, epoxides, glasses, and hybrid materials. The other phosphors are, for example, silicates, SiAlONs, oxynitrides, halides, garnet phosphors, and / or nitride phosphors. The garnet phosphor is particularly preferably a YAG phosphor with the chemical formula Y3Al5O. 12 :Ce 3+ , a YAGaG phosphor with the chemical formula Y3(Al,Ga)5O 12 :Ce 3+ or a LuAG phosphor of the chemical formula Lu3Al5O12:Ce 3+ The nitride phosphors preferentially convert blue primary radiation into red2023PF01484 13 March 2025P2023,1444 WO N - 20 -Secondary radiation. The nitride phosphor can be, for example, an alkaline earth silicon nitride, an oxynitride, an aluminum oxynitride, a silicon nitride, or a sialon. For example, the nitride phosphor is (Ca,Sr)AlSiN3:Eu 2+ (SCASN). For example, the other phosphors are Y3Al5O 12 :Ce 3+ and Lu3Al5O 12 :Ce 3+ . The other phosphors are particularly preferably selected from the following group: Ce3+ doped garnets such as YAG, YAGaG and LuAG, for example (Y,Lu,Gd,Tb)3(Al 1-x ,Ga x )5O 12 :Ce 3+ ; Eu 2+ doped nitrides, for example (Ca,Sr)AlSiN3:Eu 2+ (SCASN), Sr(Ca,Sr)Si2Al2N6:Eu 2+ , (Sr,Ca)AlSiN3*Si2N2O:Eu 2+ , (Ca,Ba,Sr)2Si5N8:Eu 2+ , SrLiAl3N4:Eu 2+ , SrLi2Al2O2N2:Eu 2+ ; Ce 3+ doped nitrides, for example (Ca,Sr)Al (1-4x / 3) Si (1+x)N3:Ce;(x = 0.2 – 0.5); Eu2+ doped sulfides, (Ba,Sr,Ca)Si 2+2O2N2:Eu ,SiAlONe, nitrido-orthosilicates (e.g. AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x ), orthosilicates (Ba,Sr,Ca)2SiO4:Eu 2+ ; Chlorosilicates (e.g. Ca8Mg(SiO4)4Cl2:Eu 2+ ); Mn 4+ doped fluorides, for example (K,Na)2(Si,Ti)F6:Mn 4+ ; Eu 2+ or Ce 3+ doped litho-silicates, such as (Li,Na,K,Rb,Cs)(Li3SiO4):E with E as Eu 2+ , Ce 3+ , or (Sr,Li)Li3AlO4:Eu 2+ or SrLi3AlO4:Eu 2+Other possible materials for the phosphors are in particular the following aluminum-containing and / or silicon-containing phosphor particles: (Ba1-x-ySrxCay)SiO4:Eu2+ (0 ^ x ^ 1, 0 ^ y ^ 1), (Ba1-x-SrCa)SiO:Eu2+ (0 ^ x ^ 1, 0 2+yxy3 ​​5 ^ y ^ 1), Li2SrSiO4:Eu, oxo-nitrides such as (Ba SrCa 2+1-xy xy)Si2O2N2:Eu (0 ^ x ^ 1, 0 ^ y ^ 1), SrSiAlON:Eu2+, 2+2 3 2 Ba4-xCaxSi6ON10:Eu (0 ^ x ^ 1), (Ba1-Sr)YSiAlO 2+ 2+xx 2 2 2 2N5:Eu (0 ^ x ^ 1), SrxSi(6-y)Al2OyN(8-y):Eu (0.052023PF01484 13 March 2025P2023.1444 WO N - 21 - ^x^0.5; 0.001 ^ y ^ 0.5), Ba 2+ 2+3Si6O12N2:Eu , Si6-zAlzOzN8-z:Eu(0 ^ z ^ 0.42), M Si Al +nOnN16-n:E 2+x 12-mn mu (M = Li, Mg, Ca, Y; x= m / v; v = valence of M, x ^ 2), M 3+xSi12-m-nAlm+nOnN16-n:Ce ,AE2-x-aRExEuaSi1-yO4-x-2yNx (AE = Sr, Ba, Ca, Mg; RE = rare earth elements), AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x(AE = Sr,Ba, Ca, Mg; RE = Seltenerdmetallelemente), Ba 2+3Si6O12N2:Eu oder Nitride wie La 3-x Y x Si6N 11 :What 3+ , (Ba 1-x-y Sr. x That y )2Si5N8:I 2+ , (As 1-Sr )AlSiN3:Eu2+ (0 ^ x ^ 1) 2+xx , Sr(Sr1-xCax)Al2Si2N6:Eu (0 ^ x ^0.2), Sr(Sr Ca )Al Si N :Ce3+ (0 ^ x ^ 0.2) SrAlS 2+1-xx 2 2 6 i4N7:Eu ,(Ba1-x-ySrxCay)SiN2:Eu2+ (0 ^ x ^ 1; 0 ^ y ^ 1), (Ba1-x-Sr Ca )SiN :Ce3+ (0 ^ x ^ 1; 0 ^ y ^ 1), (Sr Ca ) 2+yxy 2 1-xx LiAl3N4:Eu(0 ^ x ^ 1), (Ba1-x-ySrxCay)Mg2Al2N4:Eu2+ (0 ^ x ^ 1; 0 ^ y ^ 1),(Ba1-x-ySrxCay)Mg3SiN4:Eu2+ (0 ^ x ^ 1; 0 ^ y ^ 1). According to at least one embodiment, the conversion element consists of the phosphor described here. For example, the phosphor is formed as a ceramic. For example, the conversion element only partially converts the electromagnetic radiation of the semiconductor chip into electromagnetic radiation of the emission spectrum, while another part of the electromagnetic radiation of the semiconductor chip is transmitted by the conversion element.In this case, the optoelectronic component preferably emits mixed light composed of electromagnetic radiation from the first wavelength range and electromagnetic radiation from the emission spectrum. For example, the electromagnetic component emits white light. The optoelectronic component is particularly suitable for use in street lighting and turning signals. 22 -Signal lights are suitable. Using the present phosphor, the use of pure Ce-doped phosphor solutions is possible, for example, for CRI 70 (color rendering index). According to at least one embodiment, the conversion element comprises at least one further phosphor that converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. This means, for example, that the further phosphor is also embedded in the same conversion element as the first phosphor. Alternatively, the further phosphor can also be arranged in a further conversion element located between the semiconductor chip and the conversion element. The further phosphor preferably converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the third wavelength range, which differs from the emission spectrum.For example, one or more further phosphors are embedded in the matrix material. The phosphor is preferably excited by the further wavelength range, preferably the third wavelength range, of the further phosphor. This means that the phosphor converts electromagnetic radiation of the third wavelength range into electromagnetic radiation of the emission spectrum. The phosphor can be produced using the method described below. Features and embodiments that are implemented solely in conjunction with the phosphor and the optoelectronic component can also be implemented in the method, and vice versa.2023PF01484 March 13, 2025P2023,1444 WO N -. 23 - According to one embodiment of the process for producing a phosphor having the general formula EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11-y-2w O y+2w:A, where - EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of rare earth elements or combinations thereof, - T is selected from the group of tetravalent elements or combinations thereof, - D is selected from the group of trivalent elements or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof, - 2*(3-3 / 2u-xwz) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+xz) – 3*(11-y-2w) – 2*(y+2w) = 0, - 0 ≤ y+xz ≤ 6, - 0 ≤ y+2w ≤ 11, - if u+x > 0, then w ≤ 0 and z ≤ 0; or- if u+x = 0, then w > 0 or z > 0, the process comprises the steps of- providing a composition of reactants,- homogenizing the reactants to produce a reaction mixture, and- heating the reaction mixture to a temperature between 1400 °C and 2100 °C inclusive.According to at least one embodiment of the process, a composition of the reactants is homogenized in a first step of the process. The composition of the reactants can be stoichiometric or non-stoichiometric. The homogenization can be carried out, for example, in a hand mortar, a mortar mill, a ball mill, a multi-axis mixer, or 2023PF01484 March 13, 2025P2023,1444 WO N -. 24 -similar. It preferably takes place under a protective gas atmosphere. According to one embodiment of the process, the resulting reaction mixture of the reactants is transferred into a crucible. The crucible can comprise, for example, corundum, tungsten, molybdenum, or tantalum. According to at least one embodiment, the reaction mixture is heated in a further step to a temperature between 1400°C and 2100°C inclusive, preferably between 1600°C and 1900°C inclusive. The temperature is maintained for 1 hour up to and including 48 hours, preferably 2 hours up to and including 24 hours. The heating takes place under a nitrogen atmosphere or a reducing atmosphere, for example forming gas, at normal or elevated pressure. The gas atmosphere comprises, for example, a mixture of nitrogen or argon with up to 10% hydrogen or is formed from such a mixture.A tube furnace, a high-pressure furnace, or a retort furnace can be used for the synthesis. This can be operated under normal or elevated nitrogen or forming gas pressure, for example, 20 bar. For example, the synthesis takes place at 1850°C for 24 h and 10 bar nitrogen pressure. For example, the synthesis takes place at 1650°C for 4 h under an N2 atmosphere at atmospheric pressure. After the reaction and cooling, the product is ground in a hand mortar. This can be done, for example, in a hand mortar, a mortar mill, or a ball mill. According to at least one embodiment, the reactants are selected from a group consisting of nitrides, oxides, nitrates, citrates,2023PF01484 March 13, 2025P2023,1444 WO N -. 25 -Oxalates, halides, carbonates, hydroxides of EA, SE, T, D, A, and combinations thereof. According to at least one embodiment, the reactants are selected from the following group: yttrium compound, barium compound, calcium compound, magnesium compound, lanthanum compound, lutetium compound, strontium compound, silicon compound, cerium compound, aluminum compound, and combinations thereof. According to at least one embodiment, the reactants are selected from the following group: barium nitride, barium subnitride, barium oxide, barium carbonate, barium nitrate, calcium nitride, calcium nitrate, calcium carbonate, calcium oxide, yttrium nitride, yttrium oxide, lanthanum nitride, lanthanum oxide, lutetium nitride, lutetium oxide, strontium nitride, strontium subnitride, strontium carbonate, strontium oxide, silicon nitride, strontium nitrate, silicon oxide, aluminum nitride, aluminum nitrate, aluminum oxide, cerium oxide, cerium nitride, cerium fluoride and combinations thereof.According to at least one embodiment, at least one of the group BaN is used as the reactant. 1-x where x is between -0.5 and 0.5 inclusive, YN, Si3N4,AlN, CeO 2, Ca3N2, Sr3N2, Sr2N, BaO, BaCO3, Y2O3, SiO2, Al2O 3, Ce2O3 and CeF3, LuN, Si3N4, and LaN. The optoelectronic component is particularly suitable and intended for use in a cornering signal light. Features and embodiments that are implemented solely in connection with the optoelectronic component and / or the phosphor and / or the method can be used. 2023PF01484 March 13, 2025P2023,1444 WO N - 26 -can also be designed in the cornering signal light, and vice versa. According to at least one embodiment, a cornering signal light has an optoelectronic component described here. The optoelectronic component preferably emits electromagnetic radiation in the orange wavelength range. The semiconductor chip preferably emits the electromagnetic radiation in the blue wavelength range. In particular, a further phosphor, for example a Y3Al5O12:Ce, is embedded in the conversion element. The further phosphor converts at least part of the electromagnetic radiation in the blue wavelength range into electromagnetic radiation in the third wavelength range. The phosphor preferably converts the electromagnetic radiation in the third wavelength range into electromagnetic radiation in the emission spectrum.The turning signal light can advantageously comprise an optoelectronic component with a purely cerium-doped phosphor solution. In particular, the optoelectronic component is arranged in a turning signal light. The optoelectronic component is particularly suitable and intended for use in street lighting. Features and embodiments that are implemented only in connection with the optoelectronic component and / or the phosphor and / or the method can also be implemented in street lighting, and vice versa. According to at least one embodiment, a street lighting system comprises an optoelectronic component described here. 27 -Component. The optoelectronic component preferably emits electromagnetic radiation in the orange wavelength range. The semiconductor chip preferably emits the electromagnetic radiation in the blue wavelength range. In particular, at least one further phosphor, for example a LuAG (Lu 3+3Al 5O 12:Ce ) and / or a YAG (Y 3Al 5O 12:Ce 3+) phosphor and / or a YAGaG (Y 3(Al 1-x Ga 5 O 12:Ce 3+) phosphor, is embedded in the conversion element. The at least one further phosphor converts at least a portion of the electromagnetic radiation in the blue wavelength range into electromagnetic radiation in the third wavelength range. The phosphor, for example EA3-3 / 2u-xw-zY1+u+xSi6-y-x+zAly+x-zN11-y-2wOy+2w:A (EA = Ba, Ca, Sr), is excited in this phosphor solution via the emission of the two other phosphors (YAG, YAGaG and / or LuAG).The street lighting can advantageously have an optoelectronic component with a purely cerium-doped phosphor solution, achieving a CRI of 70. In particular, the optoelectronic component is arranged in a street lighting system. One idea of ​​the present phosphor is to provide a phosphor that exhibits only low flux quenching effects at high irradiances. The phosphor is suitable for use in phosphor-converted LEDs and can be used for various applications, such as CRI 70. The phosphor is used in pure Ce-doped CRI 70 solutions, which are used, for example, in street lighting. The phosphor is also used in 2023PF01484 March 13, 2025P2023,1444 WO N -. 28 -Pure Ce-doped amber phosphor solutions for cornering signal lights. The phosphor is suitable for converting UV to yellow primary radiation into radiation in the blue to orange wavelength range. The wavelength of the emitted light depends on the exact composition of the compound and can be shifted by changing the cation and anion ratio as well as by the choice of the cations used. Further advantageous embodiments and developments of the phosphor, the optoelectronic component, the cornering signal light, the street lighting, and the method are evident from the following exemplary embodiments described in conjunction with the figures.They show: Figure 1 a sectional view of various phosphor particles according to an exemplary embodiment; Figure 2 an excitation spectrum of the phosphor according to an exemplary embodiment; Figures 3, 4, 5, 6 emission spectra of the phosphor according to an exemplary embodiment; Figure 7 emission spectrum of the phosphor according to an exemplary embodiment and emission spectrum according to a comparative example;2023PF01484 March 13, 2025P2023,1444 WO N -. 29 - Figure 8 shows the relative brightness of the phosphor as a function of temperature according to an embodiment and the relative brightness according to a comparative example; Figure 9 shows the emission spectrum of the phosphor according to an embodiment; Figures 10, 11, 12 each show a schematic sectional view of an optoelectronic component according to an embodiment; Figure 13 shows a simulated LED spectrum with phosphor according to an embodiment and YAG:Ce3+ and a simulated LED spectrum with YAG:Ce3+ and comparison example (Ca,Sr)AlSiN3:Eu 2+ Figure 14 simulated LED spectrum with phosphor according to one embodiment, YAG:Ce3+ and LuAG:Ce3+ and simulated LED spectrum with YAGaG:Ce 3+ , YAG:Ce 3+ and comparison example (Ca,Sr)AlSiN3:Eu 2+ ; Figure 15 shows a CIE diagram with the position of the simulated phosphor solution according to an embodiment; Figure 16 shows a schematic sectional view of various process stages of a process for producing a phosphor according to an embodiment; Figure 17 shows a schematic sectional view of a cornering signal light according to an embodiment; and Figure 18 shows a schematic sectional view of a street light.2023PF01484 March 13, 2025P2023,1444 WO N - 30 -Figure 19 Emission spectra of the phosphor according to exemplary embodiments. Identical, similar, or equivalent elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures are not to be considered to scale. Rather, individual elements, in particular layer thicknesses, may be exaggerated for clarity and / or better understanding. The phosphor 1 according to one exemplary embodiment is in the form of particles, Figure 1. For example, the particles have a grain size between 0.2 micrometers and 100 micrometers inclusive. The phosphor 1 obeys the formula EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x- z N 11-y-2w O y+2w :A, in particular the phosphor 1 obeys the formula EA 3-3 / 2u-x SE 1+u+x Si 6-y-x Al y+x N 11-y O y :A, EA 3-3 / 2u-x-z SE1+u+x Si 6-x+z Al x- z N 11 :A, EA 3-3 / 2u SE 1+u Si6N 11 :A, where u > 0; EA 3-w SESi6N 11- 2w O 2w :A, where w > 0; EA3SESi 6-y Al y N 11-y O y :A, where y > 0; EA 3-x SE 1+x Si 6-x Al x N 11 :A, where x > 0; EA 3-z SESi 6-t+z Al t- zN11-tOt:A, where t ≥ z and z > 0; EA3-3 / 2uSE1+uSi6N11:A where -1 <(-1 / 2u) ≤ 0; EA 3-w SESi6N 11-2w O w :A, where -1 < (-w) ≤ 0; EA 3-z SESi 6-t+z Al t-z N 11-t O t :A, where -1 < (-z) ≤ 0; Ba 0,6 La 2,8 Ca 0,3 Si 4,8 Al 1,2 N 11 :Ce 3+ ; BaLu3Si4Al2N 11 :Ce 3+ ; (Ba,Y)4(Si,Al)6(O,N) 11; Ba 2.5 Y 1.5 Si 5.5 Al 0.5 N 11 or Ba2Y2Si5AlN 11;(Ba,La,Ca)4(Si,Al)6N 11 :Ce 3+ . The host lattice comprises a structure with a cubic space group. The phosphor 1 crystallizes in the cubic space group P213. The structure of phosphor 1 is isotypic to the compounds (Ba,Eu)3YbSi6N 11 and Ba 1,8 Ca 2,2 Si6N 10 O.2023PF01484 13 March 2025P2023,1444 WO N - 31 - The structure of the phosphor 1 EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11- y-2wOy+2w:A is determined using single-crystal X-ray diffraction. The lattice parameters, crystallographic data, and the basic quality parameters of the X-ray determination are summarized in Table 1. Table 1: Important crystallographic data of the single-crystal structure analysis using phosphor 1, in the present case (Ba,Y)(Si,Al)(O,N) according to Example 1. Molecular formula (Ba,Y)(Si,Al)(O,N) Z 4Crystal system cubicSpace group P23Lattice parameter a / Å 10.411(1)Volume V / Å 1129 T / K 293(2) Diffractometer Bruker D8 QuestRadiation CuKαMeasurement range Measured / independent reflections 4324 / 749Measured reciprocal space -11 ≤ h ≤ 12-11 ≤ k ≤ 9-12 ≤ l ≤ 10R / wR 7.99% / 17.95% G ooF 1,081 For the phosphor 1 with the molecular formula EA3-3 / 2u-xw-zSE1+u+xT6-y-x+zDy+x-zN11-y-2wOy+2w:A, crystallographic position parameters are also known, which are shown in Table 2. Table 2: Position and deflection parameters of the phosphor 1 according to the embodiment 1. Wycko Atom- Name ff- x y z U type Lage2023PF01484 13 March 2025P2023,1444 WO N - 32 -(Ba,Y)1 Ba 4a 0.2207(2) 0.2793(2) 0.7207(2) 0.0223(10)(Ba,Y)2 Ba 4a 0.3896(2) 0.8896(2) 0.6104(2) 0.0409(14)(Ba,Y)3 Y 4a 0.0902(3) 0.5902(3) 0.9098(3) 0.0162(12)(Ba,Y)4 Y 4a 0.5793(3) 0.5793(3) 0.5793(3) 0.0222(13)Si5 Si 12b 0.3377(7) 0.5956(7) 0.7444(6) 0.0026(14)Si6 Si 12b 0.1828(7) 0.5565(7) 0.5029(7) 0.0047(15)(N,O)7 N 12b 0.273(2) 0.486(2) 0.850(3) 0.012(5)(N,O)8 N 12b 0.498(3) 0.637(3) 0.778(3) 0.017(6)(N,O)9 O 4a 0.238(2) 0.738(2) 0.762(2) 0.018(9)(N,O)10 N 12b 0.329(3) 0.540(3) 0.591(2) 0.015(6)(N,O)11 O 4a 0.050(2) 0.450(2) 0.550(2) 0.012(8) A comparison of the lattice parameter with that of the compounds (Ba,Eu)3YbSi6N11 and Ba1.8Ca2.2Si6N10O is summarized in Table 3. Table 3: Comparison of the lattice parameter with that of the conventional compounds. (Ba,Eu)YbSiN Ba Ca SiN O (Ba,Y)(Si,Al)(O,N)a in Å 10.436(1) 10.402(2) 10.411(1) Embodiment 1 Figure 2 shows an excitation spectrum AS of the phosphor 1, in this case (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+according to one embodiment. The excitation maxima of a powder sample of embodiment 10 are at λexc = 295 nm, 375 nm, and 525 nm. This is observed at λem = 575 nm. Figure 3 shows five emission spectra ES-AB1, ES-AB2, ES-AB3, ES-AB4, and ES-AB5 of a phosphor 1 according to several embodiments. The phosphor 1 is excited at a wavelength of 448 nm. The emission spectra shown in Figure 3 show the spectra of embodiments 1-5, which do not contain any aluminum content. 33 - EDX. The phosphor 1, without the addition of aluminum, shows a narrow half-width and emits with a dominant wavelength of λ dom between 570 nm and 590 nm inclusive and an emission maximum λ maxbetween 560 nm and 580 nm inclusive, with a full width at half maximum (FWHM) between 115 nm and 140 nm inclusive, or between 0.430 eV and 0.500 eV inclusive (Table 5). The emission spectrum is the spectral intensity I of the electromagnetic radiation emitted by the phosphor 1 as a function of the wavelength λ. The emission spectrum is shown in a wavelength range from 400 to 900 nanometers inclusive. The emission spectra are truncated on the short-wave side, below 460 nm, due to the measurement setup. Figure 4 shows emission spectra ES-AB2, ES-AB3, and ES-AB4 of the phosphor 1 according to one embodiment, respectively, and an emission spectrum ES-VB according to a comparative example. The comparative example comprises the phosphor YAG:Ce3+. All emission spectra are measured at an excitation wavelength of 448 nm.Figure 4 shows the emission spectra of working examples 2 to 4 on the energy scale compared to one of the longest-wavelength emitting comparison phosphors, YAG:Ce3+. The half-widths of the spectra shown for the working examples are smaller than the half-width of the comparison phosphor YAG:Ce. 3+ . The emission spectra ES-AB6, ES-AB7, ES-AB8, ES-AB9, ES-AB11, ES-AB12 of the phosphor 1 shown in Figure 5, in the present case (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , show the2023PF01484 13 March 2025P2023,1444 WO N - 34 - Emission spectra of working examples 6, 7, 8 and 9, which have an aluminum content in the EDX, as well as working examples 11 and 12, which have the nominal compositions Ba 2.5 Y 1.5 Si 5.5 Al 0.5 N 11 and Ba2Y2Si5AlN 11All emission spectra are measured at an excitation wavelength of 448 nm. The spectrum is cut off below 460 nm due to a filter. Figure 6 shows emission spectra ES-AB6, ES-AB7, and ES-AB8 of phosphor 1, in this case (Ba,Y)4(Si,Al)6(N,O). 11 :Ce 3+ according to embodiments 6, 7, and 8. All emission spectra are measured at an excitation wavelength of 408 nm. The EDX results of embodiments 1–9 are summarized in Table 4. The spectral data of the embodiments can be found in Tables 5 and 6. Here and in the following, EDX analyses can have measurement errors. For example, the sum EA + SE in an EDX analysis can have a value greater than 4, although it can be a maximum of 4. Table 4: EDX results of the embodiments normalized to Si+Al = 6. B a Y Sr Ca Si AlExample 1 2.54 1.58 6Example 2 3.39 1.53 6Example 3 2.65 1.47 6Example 4 2.29 1.59 6Example 5 2.12 1.43 6Example 6 1.85 1.09 0.18 5.42 0.58Example 7 1.9 1.1 0.15 5.57 0.43Example 8 1.71 1.19 0.21 5.24 0.762023PF01484 13 March 2025P2023,1444 WO N - 35 -Embodiment 9 1.97 1.43 0.19 5.57 0.43Table 5: Spectral data of embodiments 1-9 with excitation at 448 nm. The spectra of embodiments 7 to 12 are cut off below λ = 460 nm due to the excitation filter. X y λ / λ / nm FWHM / nm LER / nm lm / W Design example-0.450 0.475 576 567 136 305 Design example-0.544 0.447 586 574 130 280 Design example-0.537 0.453 585 574 118 308 Design example-0.505 0.471 581 568 119 313 Design example-0.537 0.449 585 574 137 274 Design example-0.416 0.440 575 595 115 292 Design example-0.406 0.443 573 Two peaks for 265 Example 7 λ ≈ 475 individual (truncated peaks not determinable) λ ≈ 587 Example 8 Example 0.322 0.456 550 480 115 292 Example 0.406 0.448 573 Two peaks for 270 Example 9 λ ≈ 473 individual (truncated peaks not determinable) λ ≈ 589 Example 0.464 0.449 580 587154 263 Example 11 (secondary peak at approx. 460 460 not not 2023PF01484 13.March 2025P2023,1444 WO N -. 36 - taken into account) ) Design example 12 (secondary peak at approx. 460 460 not taken into account) 0.497 0.423 586 605152 231 Table 6: Spectral data of design examples 6-8 when excited at 408 nm. X y λλ / nm FWHM / nm LER / nm / lm / W Design example 6 = 457 0.288 0.275 471 Main peak: λ90 (secondary peak not taken into account) λ = 590 Design example 7 = 457 0.282 0.273 473 Main peak: λ89 (secondary peak not taken into account) λ taken into account) λ = 585 Design 0.210 0.240 481 460 92 212 Example 8 Table 7 shows the half-widths in eV for the design examples 2 to 4 of the phosphor 1 and for the comparison phosphor YAG:Ce 3+ shown. Table 7: Half-widths in eV for the working examples 2-4 and the comparison phosphor YAG. FWHM / eV Working example 2 0.494 Working example 3 0.4532023PF01484 March 13, 2025P2023.1444 WO N - 37 -Embodiment 4 0.473 Comparative Example 0.518 YAG:Ce Figure 7 shows a comparison of two emission spectra. The emission spectrum ES-AB2 of phosphor 1 in this case (EA,SE)4(Si,Al)6(N,O) 11 :Ce 3+ , according to Embodiment 2 is shown by the dotted line, and the emission spectrum ES-VB-Gd of the comparative phosphor Gd-YAG is shown by the solid line. The spectral data of the emission spectra of the comparative example Gd-YAG and the phosphor 1 according to Embodiment 2 can be found in Table 8. Table 8: Comparison of spectral data of Embodiment 2 of the phosphor 1 with a Gd-YAG (comparative example). Comparative example Embodiment 2 of the Gd-YAG phosphor 1 0.440 0.5440.535 0.447 nm 570.6 585.7λ / nm 556.3 574.3λ / nm 582.7 635.2FWHM / nm 125.4 129.8LER / lm / W 431.7 280.3In Figure 8, the thermal quenching behavior of the phosphor 1, in this case EA3-3 / 2u-xw-zY1+u+xSi6-y-x+zAly+x-zN11-y- 2w O y+2w :Ce 3+ compared to a gadolinium-containing YAG. The solid black line with triangles describes the fit and the measurement points of the thermal quenching behavior of the phosphor LS1 upon excitation2023PF01484 13 March 2025P2023,1444 WO N - 38 - of 375 nm. The dashed line with the diamonds describes the adaptation and the measurement points of the thermal quenching behavior of a Gd-YAG VB-Gd at an excitation of 460 nm. Above 125 °C, the phosphor 1 shows better thermal behavior than the comparative example Gd-YAG. Figure 9 shows an emission spectrum ES-AB13 of the phosphor 1, in this case Ba 0,6 La 2,8 Ca 0,3 Si 4,8 A 1,2 N 11 :Ce3+ according to the embodiment 13. At Ba 0,6 La 2,8 Ca 0,3 Si 4,8 A 1,2 N 11 :Ce 3+ :is it a Ce 3+ -activated phosphor that converts UV to blue primary radiation into secondary radiation in the orange spectral range. The spectral data of phosphor 1 are given in Table 9. Table 9: Spectral data of Ba La Ca Si AN :Ce as an average of 10 measured particles. Example 13, average value. Excitation wavelength 448 nm λ Dominant wavelength 576 nm λ Peak wavelength λ 583 nm F WHM 168 nm CIE-x 0.469 CIE-y 0.493 Figure 10 shows a schematic sectional view of an optoelectronic component 10 according to an embodiment, which has a semiconductor chip 11 which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface 122023PF01484 March 13, 2025P2023,1444 WO N - 39 -emits. The semiconductor chip 11 comprises an active layer sequence and an active region (not explicitly shown here) which serves to generate the primary radiation. The primary radiation is electromagnetic radiation of a first wavelength range. Preferably, it is electromagnetic radiation with wavelengths in the visible range, for example, in the blue spectral range. A conversion element 13 is arranged in the beam path of the electromagnetic radiation emitted by the semiconductor chip 11 in the first wavelength range. The conversion element 13 is configured to absorb the electromagnetic radiation of the first wavelength range and to at least partially convert it into electromagnetic radiation of the emission spectrum. In particular, the emission spectrum has a longer wavelength than the absorbed first wavelength range.Alternatively or additionally, the conversion element is configured to absorb electromagnetic radiation of a further wavelength range and to convert it at least partially into electromagnetic radiation of the emission spectrum. The conversion element 13 comprises a phosphor 1 with the general formula EA3-3 / 2u-xw-zSE1+u+xT6-y-x+zDy+x-zN11-y-2wOy+2w:A. In particular, the conversion element 13 can comprise the phosphor 1 with the formula EA. 3-3 / 2u-x SE 1+u+x Si 6-y-x Al y+x N 11-y O y :A, EA 3-3 / 2u-x- z SE 1+u+x Si 6-x+z Al x-z N 11 :A, Ba 0,6 La 2,8 Ca 0,3 Si 4,8 Al 1,2 N 11 :Ce 3+ ; BaLu3Si4Al2N 11 :Ce 3+ and / or (Ba,Y)4(Si,Al)6(O,N) 11The phosphor 1 can be embedded in a matrix material. The matrix material is, for example, a silicone, a polysiloxane, an epoxy resin, or a glass. Alternatively, 2023PF01484 March 13, 2025P2023,1444 WO N - 40 -the conversion element 13 may be free of a matrix material. In this case, the conversion element 13 may consist of the phosphor 1, for example, of a ceramic of the phosphor 1. Alternatively, the conversion element 13 may comprise at least one further phosphor 1. The further phosphor 1 converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. The further phosphor may, for example, convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the green, yellow, and / or red wavelength range. The further phosphor may, for example, be (Sr,Ca)AlSiN:Eu2+, YA3+ 3+ 3+3G:Ce, YAGaG:Ce, and / or LuAG:Ce. Further phosphors or combinations of phosphors are conceivable.The additional phosphor is embedded, for example, in an additional conversion element arranged between the semiconductor chip and the conversion element (not shown). The phosphor 1 converts, in particular, the electromagnetic radiation of the additional wavelength range. The semiconductor chip 11 and the conversion element 13 are embedded in a recess 15 of a housing 14. For better stabilization and to protect the semiconductor chip 11 and the conversion element 13, the recess 15 of the housing 14 can be filled with a potting compound 16, and the semiconductor chip 11 and the conversion element 13 are completely enclosed by the potting compound 16. The conversion element 13 can, as shown in Figure 10, make indirect mechanical contact with the semiconductor chip 112023PF01484 March 13, 2025P2023,1444 WO N -. 41 -be arranged. In particular, the radiation exit surface 12 forms the common surface between the conversion element 13 and the semiconductor chip 11. Alternatively, further layers, such as adhesive layers, can be located between the semiconductor chip 11 and the conversion element 13. According to the embodiment shown in Figure 11, the conversion element 13 is arranged at a distance from the semiconductor chip 11. In this case, a potting compound 16 can be arranged between the semiconductor chip 11 and the conversion element 13. Alternatively, the recess 15 between the semiconductor chip 11 and the conversion element 13 can also be free of a potting compound 16 or further layers or components. According to the embodiment shown in Figure 12, the conversion element 13 is arranged in a recess 15. The semiconductor chip 11 is embedded in the conversion element 13.The conversion element 13 comprises the phosphor 1 and the matrix material, which is, for example, silicone. Additional phosphors can be incorporated into the conversion element 13. Figures 13 and 14 each show simulated LED emission spectra of phosphor solutions. The phosphor solution of the emission spectrum SE1 comprises the phosphor 1, in this case EA. 3-3 / 2u-x-w-z Y 1+u+x Si 6-y-x+z Al y+x-z N 11-y- 2wOy+2w:Ce3+, and the additional phosphor Y3Al5O12:Ce. Phosphor 1 is excited in this solution via the emission of the phosphor YAG:Ce3+. The simulated LED spectrum SE1-VB shows the phosphor solution made of the reference phosphor (Sr,Ca)AlSiN3:Eu. 2+ and the additional 2023PF01484 13 March 2025P2023,1444 WO N - 42 - Fluorescent material YAG:Ce 3+ at the same color location (x CIE = 0.567, y CIE=0.430). The color location FO achieved with the embodiment 1 is shown in the CIE diagram in Figure 15. A blue LED with λdom = 453 nm is used as semiconductor chip 11. The phosphor 1 enables a phosphor solution for cornering signal lights based purely on cerium-doped phosphors. In addition to achieving a purely cerium-doped phosphor solution for cornering signal lights, a CRI70 solution based purely on cerium-doped phosphors can also be realized with the phosphor 1, e.g., for use in street lighting. For this purpose, the phosphor 1, in this case EA 3-3 / 2u-x-w-z Y 1+u+x Si 6-y-x+z Al y+x-z N 11-y-2w O y+2w :Ce 3+ with a LuAG:Ce 3+(LuAlO:Ce3+) and a YAG3+3+3512:Ce (Y3Al5O12:Ce) are combined and excited using a blue LED (λdom = 455 nm). A CRI of 70 can be achieved at a color temperature of 4000 K. The phosphor 1 is excited in the solution via the emission of the two other phosphors (YAG:Ce3+ and LuAG:Ce3+). The simulated emission spectrum SE2 according to an embodiment is shown in Figure 14. In addition, Figure 14 shows the simulated emission spectrum SE2-VB of a comparison phosphor solution. This is shown as a combination of a blue LED (λ dom = 460 nm) with the phosphors YAGaG:Ce 3+ , YAG:Ce 3+ and (Sr,Ca)AlSiN3:Eu 2+ simulated. The exemplary embodiments show, among other things, that with the phosphor 1, both a phosphor solution for cornering signal lights and a CRI70 solution based purely on cerium-doped phosphors can be realized.2023PF01484 13 March 2025P2023,1444 WO N - 43 -Figure 15 shows a CIE diagram according to one exemplary embodiment. The position of the color coordinate FO of the simulated phosphor solution for cornering signal lights SE1 is shown in the CIE diagram. The target color coordinate ZFO for cornering signal lights is outlined by a dashed line. In the method according to the exemplary embodiment of Figure 16, a composition of reactants is provided in a first method step S1.The reactants may comprise an yttrium compound, for example yttrium nitride, yttrium oxide; a barium compound, for example barium carbonate, barium oxide, barium subnitride, barium nitride, barium nitrate; a calcium compound, for example calcium nitride, calcium nitrate, calcium carbonate, calcium oxide; a lanthanum source, for example lanthanum nitride, lanthanum oxide; a lutetium compound, for example lutetium nitride, lutetium oxide; a strontium compound, for example stontium nitride, strontium nitrate, strontium subnitride, strontium oxide, or strontium carbonate; a silicon compound, for example silicon nitride or silicon oxide; an aluminum compound, for example aluminum nitride, aluminum nitrate, or aluminum oxide; and an activator, for example cerium in the form of cerium oxide, cerium nitride, or cerium fluoride. The reactants are weighed in under a protective gas atmosphere and thoroughly mixed. This can be done in a hand mortar, a mortar grinder, a ball mill, a multi-axis mixer or similar.In a next step S2, the reaction mixture is heated to a temperature between 1400 °C and 2100 °C inclusive. Before heating, the mixed reactants are homogenized in a crucible2023PF01484 March 13, 2025P2023,1444 WO N -. 44 -This can consist of, for example, corundum, tungsten, molybdenum, or tantalum. The maximum synthesis temperature is maintained for 2 to 48 hours. Annealing takes place under a nitrogen or reducing atmosphere, such as forming gas, at normal or elevated pressure. A tube furnace, a high-pressure furnace, or a retort furnace can be used for the synthesis. For example, the reactants are reacted under an N2 atmosphere at 10 bar and 1850 °C for 24 hours. In the next step (S3), the reaction mixture is ground in a hand mortar after cooling. This can be done, for example, in a hand mortar, a mortar grinder, or a ball mill. An acidic wash can then be performed to increase the phase fraction.Table 10 summarizes the initial weight of the reactants used for the preparation of a phosphor 1 with the empirical formula EA3-3 / 2u-xw-zSE1+u+xT6-y-x+zDy+x-zN11-y-2wOy+2w:A according to Examples 1 to 12. The variable x of the compound BaN. 1-x lies between -0.5 and 0.5 inclusive.Table 10: Weight of the working examples 1 – 12 in grams.BaN YN SiN AlN CeOWorking example5.835 13.90 10.027 0.23l 1 3 5 Working example7.995 1.833 5.048 0.12l 2-4 + 6 + 7 4 Working example5.685 3.909 4.487 0.786 0.13l 8+9 2 Working example7.995 1.833 5.048 0.12l 10 42023PF01484 13 March 2025P2023,1444 WO N - 45 - Design example 6,877 2,838 4,775 0,381 0,12l 11 8 Design example 5,685 3,909 4,487 0,786 0,13l 12 2 Fluorescent material 1, present Ba 0,6 La 2,8 Ca 0,3 Si 4,8 A 1,2 N 11 :Ce 3+According to Example 13, the reactants BaN1-x, x = -0.5 to 0.5, Ca3N2, LaN, AlN, and Si3N4 are prepared with CeO2 as a dopant. Prior to synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then transferred to a tungsten crucible. The material is synthesized at 1650°C for 4 hours under N2 at atmospheric pressure. The phosphor Ba0.6La2.8Ca0.3Si4.8A1.2N11:Ce3+ is found mixed with other phases. The presence of phosphor 1 is confirmed by X-ray diffraction on the powder with a lattice parameter a = 10.417 Å. An acid wash can be performed to increase the phase fraction. Using energy dispersive X-ray spectroscopy (EDX), the composition is determined as the average of 5 measured crystals to be Ba:La:Ca = 0.6:2.8:0.3 and Si:Al = 4.8:1.2.Deviations from the nominal sample weight arise from errors in the EDX analysis and compositional deviations during synthesis between the sample weight and the resulting compound, e.g., due to the formation of secondary phases. Table 11 shows the sample weight for the synthesis of the phosphor 1 Ba. 0,6 La 2,8 Ca 0,3 Si 4,8 A 1,2 N 11 :Ce 3+ listed. Table 11: Sample weight for the synthesis of Ba La Ca Si AN :Ce . BaN LaN AlN CaN SiN CeOExample 4.743 9.684 1.311 1.565 7.478 0.220 13 ggggg g2023PF01484 March 13, 2025P2023,1444 WO N - 46 - The phosphor 1, in this case BaLu3Si4Al2N 11 :Ce 3+ , according to the embodiment 14, the reactants BaN 1-x, x = -0.5 to 0.5, LuN, AlN, and Si3N4 with CeO2 as dopant (Table 12). Prior to synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then transferred to a tungsten crucible. The material is synthesized at 1650°C for 4 h under N2 at atmospheric pressure. Table 12: Sample weight for the synthesis of BaLuSiAlN:Ce:B aN LuN AlN SiN CeO Execution-1.505 g 5.695 g 0.832 g 1.898 g 0.070 gExample 14 The phosphor 1, in the present case (Ba,La,Ca)4(Si,Al)6N 11 :Ce 3+with x = 0.11, according to working examples 15 and 16, the reactants BaN1-x, Ca3N2, LaN, SiO2, AlN, and Si3N4 are prepared with CeO2 as the dopant (Table 13). Before synthesis, the reactants are thoroughly mixed in a glove box under a protective gas atmosphere and then transferred to a tungsten crucible. The synthesis of working example 15 takes place for 4 hours at 1650°C in a high-pressure furnace at 10 bar under a nitrogen atmosphere. The synthesis of working example 16 takes place for 4 hours at 1850°C in a high-pressure furnace at 20 bar under a nitrogen atmosphere. Table 13: Initial weight for the synthesis of (Ba,La,Ca)(Si,Al)N:Ce BaN LaN AlN SiO Ca N Si N CeO Working example 4.743 9.684 1.311 - 1,565 7.478 0.220 15 ggggg g2023PF01484 13 March 2025P2023,1444 WO N - 47 - Example 2.712 8.304 0.749 - 3,578 9.405 0.252 16 gggggg The phase (Ba,La,Ca)4(Si,Al)6N 11 :Ce 3+was found mixed with other phases. The presence of the phase was confirmed by X-ray diffraction on the powder. The refined lattice parameters can be found in Table 14. Table 14: Lattice parameters of (Ba,La,Ca) (Si,Al) N :Ce from PXRD data Nominal composition Lattice parameters according to sample weight a in Å Example (BaLa2)CaSi5AlN11:Ce 10.41715 Example (Ba0.5La1.5)Ca2Si5.5Al0.5N11:Ce 10.40816 EDX data for Example 15 are given in Table 15. Table 15: EDX data for (Ba,La,Ca) (Si,Al) N :Ce normalized to Si+Al=6 B a Ca Ce La Si Al Example 0.6 1.5 1.5 0.5 5.4 0.615-1 Example 0.8 1.2 0.5 0.8 5.0 1.015-2 Figure 19 shows emission spectra of single crystals of the phase (Ba,La,Ca)4(Si,Al)6N11:Ce3+. The solid line shows the emission spectrum of Example 16-1, the dashed line the emission spectrum of Example 15-2.2023PF01484 March 13, 2025P2023,1444 WO N - 48 -Table 16 shows important optical data for the embodiments 16-1 and 15-2 at an excitation wavelength of 408 nm. Table 4: Important optical data for (Ba,La,Ca)(Si,Al)N :Ce , excitation wavelength 408 nm. Embodiment Embodiment Example 16-1 Example 15-2 Dominance- 490 591 wavelength λ peak wavelength 469 626 λ F WHM 101 152CIE-x 0.228 0.530 CIE-y 0.318 0.401 The cornering signal light 17 according to the embodiment of Figure 17 comprises an optoelectronic component 10, as already described, for example, with reference to Figures 10 to 12. The optoelectronic component 10 is intended to emit electromagnetic radiation in the orange or amber spectral range. The phosphor 1 emits electromagnetic radiation 21 in the orange wavelength range with a dominant wavelength (λDom) between 400 nanometers and 650 nanometers, and the semiconductor chip 11 emits electromagnetic radiation in the blue wavelength range. Another cerium-doped phosphor, for example YAG:Ce 3+, is arranged in the optoelectronic component, for example, a conversion element. The further phosphor converts the electromagnetic radiation of the semiconductor chip 11 into electromagnetic radiation of the third wavelength range. The phosphor 1, in turn, partially converts the electromagnetic radiation, which2023PF01484 March 13, 2025P2023,1444 WO N - 49 -emitted by the further phosphor into electromagnetic radiation of the emission spectrum. The street lighting 18 according to the embodiment of Figure 18 comprises an optoelectronic component 10, as already described, for example, with reference to Figures 10 to 12. The phosphor 1 emits electromagnetic radiation 21 with a dominant wavelength (λDom) between 400 nanometers and 650 nanometers, and the semiconductor chip 11 emits electromagnetic radiation in the blue wavelength range. Two further cerium-doped phosphors, for example YAG:Ce3+ and LuAG:Ce3+, are arranged in the optoelectronic component, for example a conversion element. The further phosphors convert the electromagnetic radiation of the semiconductor chip 11 into electromagnetic radiation of a further wavelength range, for example a third and fourth wavelength range.The phosphor 1, in turn, partially converts the electromagnetic radiation emitted by one of the two further phosphors or both further phosphors into electromagnetic radiation of the emission spectrum. The phosphor 1 and the further phosphors are cerium-doped phosphors that form a pure cerium-doped CRI70 phosphor solution. This patent application claims priority from German patent application 102024107385.3, the disclosure of which is hereby incorporated by reference. The features and embodiments described in conjunction with the figures can be developed according to further 2023PF01484 March 13, 2025P2023,1444 WO N -. 50 -Embodiments can be combined with one another, even if not all combinations are explicitly described. Furthermore, the embodiments described in conjunction with the figures can alternatively or additionally have further features according to the description in the general part. The invention is not limited to these by the description based on the embodiments. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly specified in the patent claims or embodiments.

[0002] 2023PF01484 13 March 2025P2023,1444 WO N - 51 - List of reference symbols1 PhosphorAS Excitation spectrum of the phosphor(Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , Example 10ES-AB1 Emission spectrum of the phosphor (Ba,Y)4Si6(N,O) 11 :Ce3+ , Example 1ES-AB2 Emission spectrum of the phosphor (Ba,Y)4Si6(N,O) 11 :Ce 3+ , Example 2ES-AB3 Emission spectrum of the phosphor (Ba,Y)4Si6(N,O) 11 :Ce 3+ , Example 3ES-AB4 Emission spectrum of the phosphor (Ba,Y)4Si6(N,O) 11 :Ce 3+ , Example 4ES-AB5 Emission spectrum of the phosphor (Ba,Y)4Si6(N,O) 11 :Ce 3+ , Example 5ES-VB Emission spectrum of the comparison phosphor YAG:Ce 3+ ES-AB6 Emission spectrum of the phosphor (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , Example 6ES-AB7 Emission spectrum of the phosphor (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , Example 7ES-AB8 Emission spectrum of the phosphor (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , Example 8ES-AB9 Emission spectrum of the phosphor (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+, Example 9ES-AB11 Emission spectrum of the phosphor (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , Example 11ES-AB12 Emission spectrum of the phosphor (Ba,Y)4(Si,Al)6(N,O) 11 :Ce 3+ , Example 12ES-AB13 Emission spectrum of the phosphorBa 0,6 La 2,8 Ca 0,3 Si 4,8 A 1,2 N 11 :Ce 3+ , Example 13ES-VB-Gd Emission spectrum of the comparison phosphor GdYAG:Ce 3+ ,2023PF01484 13 March 2025P2023,1444 WO N - 52 - VB-Gd relative brightness of the comparison example GdYAG:Ce 3+ depending on temperatureLS1 relative brightness of the phosphorEA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11-y-2w O y+2w :Ce 3+ depending on temperature r.B. relative brightness SE1 simulated LED spectrum with phosphor 1 and YAG:Ce 3+ SE1-VB simulated LED spectrum with YAG:Ce3+ and comparison example (Ca,Sr)AlSiN3:Eu2+ SE2 simulated LED spectrum with phosphor 1 and YAG:Ce 3+ and LuAG:Ce 3+ SE2-VB simulated LED spectrum with YAGaG:Ce3+, YAG:Ce3+ and comparison example (Ca,Sr)AlSiN3:Eu 2+ FO color locationZFO target color location10 optoelectronic component11 semiconductor chip12 radiation exit surface13 conversion element14 housing15 recess16 encapsulation17 cornering signal light18 street lightingI intensityλ wavelengthE emissionS1 process step 1S2 process step 2S3 process step 3

Claims

2023PF01484 13 March 2025P2023,1444 WO N - 53 - Claims 1. Phosphor (1) with the general formula EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11-y-2w O y+2w:A- EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof,- SE is selected from the group of rare earth elements or combinations thereof,- T is selected from the group of tetravalent elements or combinations thereof,- D is selected from the group of trivalent elements or combinations thereof,- A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof,- 2*(3-3 / 2u-xwz) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+xz) – 3*(11-y-2w) – 2*(y+2w) = 0,- 0 ≤ y+xz ≤ 6,- 0 ≤ y+2w ≤ 11, and- if u+x > 0, then w ≤ 0 and z ≤ 0; or - if u+x = 0, then w > 0 or z > 0.

2. The phosphor (1) according to the preceding claim, wherein -1 < (-1 / 2u-wz) ≤ 0.

3. The phosphor (1) according to any one of the preceding claims, wherein A comprises cerium.

4. The phosphor (1) according to any one of the preceding claims, wherein EA comprises Ba, Ca, Sr, and / or Mg.

5. The phosphor (1) according to any one of the preceding claims, wherein SE comprises yttrium, lanthanum, and / or lutetium. 2023PF01484 13.March 2025P2023,1444 WO N -. 54 - 6. Phosphor (1) according to one of the preceding claims, wherein T comprises silicon and / or D comprises aluminum.

7. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula EA 3-3 / 2u-x SE 1+u+x Si 6-y- xAly+xN11-yOy:A has with- 2*(3-3 / 2u-x) + 3*(1+u+x) + 4*(6-xy) + 3*(y+x) – 3*(11-y) – 2*y=0,- 0 ≤ 3 / 2u+x ≤ 3,- 0 ≤ y+x ≤ 6, and- 0 ≤ y≤ 11, orwherein the phosphor (1) has the formula EA 3-3 / 2u-x SE 1+u+x Si 6-y- xAly+xN11-yOy:A has with- 2*(3-3 / 2u-x) + 3*(1+u+x) + 4*(6-xy) + 3*(y+x) – 3*(11-y) – 2*y=0,- 0 ≤ 3 / 2u+x ≤ 3,- 0 ≤ y+x ≤ 6,- 0 ≤ y ≤ 11, and- -1 < (-1 / 2u) ≤ 0, orwherein the phosphor (1) has the formula EA 3-3 / 2u-x-z SE 1+u+x Si 6-x+z Al x- zN11:A has with- 2*(3-3 / 2u-xz) + 3*(1+u+x) + 4*(6-x+z) + 3*(xz) – 33 =0,- 0 ≤ 3 / 2u+x+z ≤ 3, and- 0 ≤ xz ≤ 6 orwherein the phosphor (1) has the formula EA 3-3 / 2u-x-z SE 1+u+x Si 6-x+z Al x-zN11:A has - 2*(3-3 / 2u-xz) + 3*(1+u+x) + 4*(6-x+z) + 3*(xz) - 33 = 0, - 0 ≤ 3 / 2u+x+z ≤ 3, - 0 ≤ xz ≤ 6, and -1 < (-1 / 2u-z) ≤ 0.

8. Phosphor (1) according to one of the preceding claims, 2023PF01484 13 March 2025P2023,1444 WO N - 55 - wherein the phosphor (1) has at least one of the following formulas: EA 3-3 / 2u SE 1+u Si6N 11 :A, where u > 0; EA 3- w SESi6N 11-2w O 2w :A, where w > 0; EA3SESi 6-y Al y N 11-y O y :A, where y > 0; EA 3-x SE 1+x Si 6-x Al x N 11 :A, where x > 0; EA 3-z SESi 6- t+z Al t-z N 11-t O t :A, where t ≥ z and z > 0, EA 3-3 / 2u SE 1+u Si6N 11 :A where -1 < (-1 / 2u) ≤ 0, EA 3-w SESi6N 11-2w O w :A, where -1 < (- w) ≤ 0, EA 3-z SESi 6-t+z Al t-z N 11-t O t:A, where -1 < (-z) ≤ 0.

9. The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) has a host lattice comprising a structure with a cubic space group.

10. The phosphor (1) according to any one of the preceding claims, wherein the phosphor (1) crystallizes in the cubic space group P213.

11. The phosphor (1) according to any one of the preceding claims, wherein a dominant wavelength (λ Dom ) of the electromagnetic radiation emitted by the phosphor (1) is between 400 nanometers and 650 nanometers inclusive.

12. The phosphor (1) according to any one of the preceding claims, wherein a half-width of the electromagnetic radiation emitted by the phosphor (1) is between 70 nanometers and 190 nanometers inclusive.

13. An optoelectronic component (10) comprising: - a semiconductor chip (11) which, during operation, emits electromagnetic radiation of a first 2023PF01484 March 13, 2025P2023,1444 WO N -56 - wavelength range from a radiation exit surface (12), and- a conversion element (13) with a phosphor (1) according to claim 1, which converts electromagnetic radiation of the first and / or a further wavelength range into electromagnetic radiation of the emission spectrum.

14. Optoelectronic component (10) according to the preceding claim, wherein the conversion element (13) comprises at least one further phosphor that converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the further wavelength range.

15. Method for producing a phosphor (1) with the general formula EA 3-3 / 2u-x-w-z SE 1+u+x T 6-y-x+z D y+x-z N 11-y-2w O y+2w:A- EA is selected from Mg, Ca, Sr, Ba, Zn or combinations thereof,- SE is selected from the group of rare earth elements or combinations thereof,- T is selected from the group of tetravalent elements or combinations thereof,- D is selected from the group of trivalent elements or combinations thereof,- A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Cu, Er or combinations thereof,- 2*(3-3 / 2u-xwz) + 3*(1+u+x) + 4*(6-y-x+z) + 3*(y+xz) – 3*(11-y-2w) – 2*(y+2w) = 0,- 0 ≤ y+xz ≤ 6,- 0 ≤ y+2w ≤ 11,- if u+x > 0, then w ≤ 0 and z ≤ 0; or- if u+x = 0, then w > 0 or z > 0.2023PF01484 13 March 2025P2023,1444 WO N - 57 -comprising the steps of providing a composition of reactants, homogenizing the reactants to produce a reaction mixture, and heating the reaction mixture to a temperature between 1400°C and 2100°C inclusive.

16. A process for producing a phosphor (1) according to the preceding claim, wherein the reactants are selected from a group comprising nitrides, oxides, nitrates, citrates, oxalates, halides, carbonates, hydroxides of each of EA, SE, T, D, A, and combinations thereof. 17.A method for producing a phosphor (1) according to any one of the preceding claims, wherein the reactants are selected from the following group: barium nitride, barium oxide, barium subnitride, barium carbonate, barium nitrate, calcium nitride, calcium nitrate, calcium carbonate, calcium oxide, yttrium nitride, yttrium oxide, lanthanum nitride, lanthanum oxide, lutetium nitride, lutetium oxide, strontium nitride, strontium subnitride, strontium carbonate, strontium oxide, silicon nitride, strontium nitrate, silicon oxide, aluminum nitride, aluminum nitrate, aluminum oxide, cerium oxide, cerium nitride, cerium fluoride, and combinations thereof.

18. A method for producing a phosphor (1) according to any one of the preceding claims, wherein the reactants are at least one from the group BaN. 1-x; where x is between -0.5 and 0.5 inclusive,YN, Si3N 4, AlN, CeO 2, Ca3N2, Sr3N2, Sr2N, BaO, BaCO3, Y2O3, SiO2, Al2O3, Ce2O3 and CeF3, LuN, Si3N4 and LaN is selected.2023PF01484 13 March 2025P2023,1444 WO N - 58 -19. A turning signal light (17) comprising an optoelectronic component (10) according to one of claims 13 and 14.

20. A street light (18) comprising an optoelectronic component (10) according to one of claims 13 and 14.

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