Optoelectronic component and method of producing an optoelectronic component

Abstract

An optoelectronic component (18) comprises a module (17) with a rigid first carrier (12), a foil (1), a structured contact layer (4) and at least one optoelectronic semiconductor chip (7). The foil (1) is arranged with its inner side (2) at a first top side (13) of the first carrier (12). The contact layer (4) is arranged at an outer side (3) of the foil (1) averted from the first top side (13) of the first carrier (12). The optoelectronic semiconductor chip (7) is arranged at a surface (5) of the contact layer (4) averted from the outer side (3) of the foil (1).

Description

[0001] OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN

[0002] OPTOELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention refers to an optoelectronic component and a method of producing an optoelectronic component .

[0005] This patent application claims priority from German patent application DE 10 2024 107 896 . 0 , the disclosure of which is hereby incorporated by reference .

[0006] From the state of the art , light emitting diodes ( LEDs ) arranged on a foil comprising Polyethylene terephthalate ( PET ) are known . Typically, an integration / moduli zation takes place by embedding such LED- foils into a glass or a polymer laminate such as Polyvinyl butyral ( PVB ) or Poly (methyl methacrylate ) ( PMMA) . The integration enables a good protection against scratches , moisture and of fers a good transparency, flexibility and the possibility of reali zing thin optoelectronic components .

[0007] Furthermore , video walls and other display concepts comprising LEDs are known . However, there is a need for low-cost video wall / display concepts .

[0008] One obj ective of the present invention is to provide an improved optoelectronic component and to speci fy an improved method of producing an optoelectronic component . This obj ective is solved by an optoelectronic component and a method of producing an optoelectronic component comprising the features of the independent claims , respectively . Advantageous embodiments are speci fied in the dependent claims .

[0009] An optoelectronic component comprises a module with a rigid first carrier, a foil , a structured contact layer and at least one optoelectronic semiconductor chip . The foil is arranged with its inner side at a first top side of the first carrier . The contact layer is arranged at an outer side of the foil averted from the first top side of the first carrier . The optoelectronic semiconductor chip is arranged at a surface of the contact layer averted from the outer side of the foil .

[0010] The basic idea of the optoelectronic component is based on the arrangement of at least one optoelectronic semiconductor chip, e . g . an LED, on a pre-structured and electrically conductive contact layer which is carried / supported by the foil . This concept can be called Smart VIS concept . To enable larger scale pixel arrays in order to reali ze display / videowall modules pre-arranged / pre-connected LED arrays have to be placed onto a mechanical stable carrier . Therefore , the foil comprising the at least one optoelectronic semiconductor chip is arranged at the first carrier which is rigid . The first carrier may only provide rigidity without any further functionality .

[0011] Compared to the known Smart VIS approaches the proposed concept provides the rigidity necessary to be handled as a module , e . g . a module for a display or videowall application .

[0012] The foil can be transparent and comprises the structured contact layer arranged at the outer side of the foil enabling a wiring of the optoelectronic semiconductor chip or a plurality of optoelectronic semiconductor chips , e . g . arranged in a regular pattern .

[0013] In an embodiment the foil comprising the contact layer is bent to a first bottom side of the first carrier opposite the first top side such that the foil additionally is arranged with its inner side at first side faces of the first carrier and at least partially at the first bottom side of the first carrier and the contact layer arranged at the outer side of the foil is additionally in regions of the first side faces and the first bottom side of the first carrier . To ensure the electrical contactability, the foil including the structured contact layer is bent to the bottom side of the rigid first carrier . With this approach, a low-cost module comprising at least one optoelectronic semiconductor chip with the capability of module backside contacting is reali zed . The electrical backside contactability is provided by bending the foil over the edges , i . e . the side faces of the first carrier . Therefore , no costly vias or other complex wiring techniques have to be used, to connect a module with a driver circuit .

[0014] In an embodiment the optoelectronic semiconductor chip is designed as a flip -chip comprising two bottom contacts arranged at the surface of the contact layer . Advantageously, the bottom contacts can be contacted by the contact layer which is partially arranged at the first bottom side of the first carrier .

[0015] In an embodiment an adhesive interlayer is arranged between the first carrier and the foil . In other words , the adhesive is arranged on the first carrier and the foil is arranged on the adhesive . Advantageously, the foil is fixed to the first carrier by applying the adhesive . Any known adhesive may be used to attach the foil to the first side of the first carrier . The adhesive is arranged on the first top side of the carrier and can also be arranged on the first side faces and the at least partially on the first bottom side of the carrier i f the foil is bend over the first side faces to the first bottom side .

[0016] In an embodiment the optoelectronic component comprises a plurality of modules according to one of the described embodiments and a second carrier . The modules are arranged at a second top side of the second carrier such that the first bottom sides of the first carriers are facing the second top side of the second carrier . The second carrier can be flexible or rigid . The second carrier can also be curved or comprise any shape and can also be three-dimensional . Advantageously, any second carrier can be laminated with the modules . The first carriers of the modules can be transparent , for example .

[0017] In an embodiment electrical contact pads are arranged at the second top side of the second carrier . The modules are arranged at the contact pads such that the contact layer of each module arranged in regions of the first bottom sides of the first carriers is in contact with at least two contact pads , respectively . Advantageously, the contact layer is electrically connected to the contact pads of the second carrier without any vias / contacts extending through the first carriers . For every module , the foil can be fixed by means of the adhesive , as described . Also , the optoelectronic semiconductor chips can be designed as flip-chips for every module or at least a part of the modules .

[0018] In an embodiment the modules each comprise a plurality of optoelectronic semiconductor chips designed to emit electromagnetic radiation and arranged in a regular pattern . In this case , the optoelectronic component can for example be designed as a videowall or a display . The regular pattern / array e . g . can comprise groups of optoelectronic semiconductor chips , e . g . groups of three LEDs . Typically, in a videowall or display application each group comprises a first LED designed to emit red light , a second LED designed to emit green light and a third LED designed to emit blue light (RGB- display) . However, the applications may require other configurations of optoelectronic semiconductor chips and / or groups of optoelectronic semiconductor chips . Advantageously, a low- cost display unit or videowall can be provided which is also compatible with mini- and micro-LEDs .

[0019] Apart from LEDs , other optoelectronic semiconductor chips can be used, e . g . laser diodes . In other embodiments however, the optoelectronic semiconductor chips can alternatively be designed to detect electromagnetic radiation . E . g . , the optoelectronic semiconductor chips can be designed as photodiodes . In this case , the optoelectronic component can be designed as a detector array .

[0020] In an embodiment the modules are embedded in an encapsulation arranged at the second top side of the second carrier . Advantageously, the modules are protected mechanically and also against moisture . The encapsulation can be arranged by dispensing or by means of a molding method, for example .

[0021] In an embodiment the second carrier is black . In another embodiment a black layer is arranged at an encapsulation surface averted from the second top sided of the second carrier . In yet another embodiment a black material is arranged between the first carriers of the modules and the second carrier . In the three latter embodiments , advantageously an optical appearance suitable for display / videowall applications can be achieved such as a non-ref lective surfaces , thereby e . g . providing a high contrast and a non-glossy appearance .

[0022] The second carrier can for example be a printed circuit board ( PCB ) . I f the second carrier is black it can e . g . comprise a polymer or a plastic and black particles such as carbon or soot particles blended with the polymer / plastic . The black layer arranged at the encapsulation and the black material arranged between the first carriers of the modules and the second carrier can also comprise a polymer or a plastic and black particles blended with the polymer / plastic .

[0023] In an embodiment the foil comprises PET and the contact layer comprises copper . In an embodiment the first carrier comprises a metallic material , aluminium, glass or a polymer . Advantageously, a low-cost module can be provided when using the speci fied materials . However, the foil the contact layer and the first carrier can also comprise other materials , respectively . A method of producing an optoelectronic component comprises the following method steps . At least one optoelectronic semiconductor chip is arranged at a surface of a structured contact layer arranged at an outer side of a foil . The foil comprising the at least one optoelectronic semiconductor chip is arranged with its inner side opposite the outer side at a first top side of a rigid first carrier . The method steps of arranging at least one optoelectronic semiconductor chip at the contact layer which is arranged at the foil and arranging the foil at the first carrier are forming a process step of producing an optoelectronic module .

[0024] In an embodiment the foil comprising the contact layer is bent to the first bottom side of the first carrier such that the foil additionally is arranged with its inner side at the first side faces of the first carrier and at least partially at the first bottom side of the first carrier and the contact layer arranged at the outer side of the foil additionally is arranged in regions of the first side faces and the first bottom side of the first carrier . Advantageously, no electrically conductive vias have to be produced through the first carrier in order to contact the optoelectronic semiconductor chip electrically .

[0025] In an embodiment a plurality of first carriers each comprising the foil and the at least one optoelectronic semiconductor chip, respectively, are arranged at a second top side of a second carrier such that the first bottom sides of the first carriers are facing the second top side of the second carrier .

[0026] Electrical contact pads can be arranged at the second top side of the second carrier . The first carriers are arranged at the contact pads such that each contact layer arranged in a region of the first bottom side of a first carrier, is arranged at at least two contact pads , respectively . Advantageously, the assembly of the modules and an integration of driver circuits are separated enabling a tremendous process flexibility and a huge cost advantage . Each module can be provided with a low-cost first carrier . The optoelectronic semiconductor chips can also be pretested before attaching them to the first carriers and / or before attaching the modules to the second carrier .

[0027] An electrical connection between the contact pads and the contact layer can be reali zed by low temperature processes to protect the foil . The attachment of the optoelectronic semiconductor chips to the contact layers can be performed by means of a solder material comprising a low melting temperature , for example an alloy comprising SnBi .

[0028] The above-described properties , features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of the exemplary embodiments which are explained in greater detail in association with the drawings . Here in schematic illustration in each case :

[0029] Fig . 1 : a first method step of a method of producing an optoelectronic component ;

[0030] Fig . 2 : a second method step of the method of producing an optoelectronic component ;

[0031] Fig . 3 : a third method step of the method of producing an optoelectronic component ;

[0032] Fig . 4 : an additional method step of the method of producing an optoelectronic component ;

[0033] Fig . 5 : further additional method steps of the method of producing an optoelectronic component . Fig . 1 schematically shows a first method step of a method of producing an optoelectronic component . The elements shown in Fig . 1 are depicted in a cross-sectional side view .

[0034] First , a foil 1 is provided comprising an inner side 2 and an outer side 3 opposite the inner side 2 . The foil 1 exemplarily comprises PET but can comprise any other plastic or polymer . A structured contact layer 4 is arranged at the outer side 3 of the foil 1 . The contact layer 4 exemplarily comprises copper . However, the contact layer 4 can comprise any other metallic or electrically conductive material . The contact layer 4 is structured to provide conductive tracks 6 on the foil 1 .

[0035] The contact layer 4 comprises a surface 5 which is averted from the outer side 3 of the foil 1 . In the first method step, at least one optoelectronic semiconductor chip 7 is arranged at the surface 5 of the contact layer 4 . Fig . 1 exemplarily shows that two optoelectronic semiconductor chips 7 are arranged at the contact layer 4 . However, any number of optoelectronic semiconductor chips 7 can be arranged at the contact layer 4 . The optoelectronic semiconductor chips 7 are designed as light-emitting diodes ( LEDs ) , exemplarily . The optoelectronic semiconductor chips 7 can be designed as volume- or surface emitters . In other embodiments the optoelectronic semiconductor chips 7 are designed as laser diodes or photodiodes .

[0036] As an example , the optoelectronic semiconductor chips 7 are designed as flip-chips as they comprise two bottom contacts 8 , respectively, which face the surface 5 of the structured contact layer 4 . The optoelectronic semiconductor chips 7 comprise a sapphire substrate 9 and an active region 10 which has been grown on the sapphire substrate 9 . The optoelectronic semiconductor chips 7 can comprise any other suitable substrate 9 instead of the sapphire substrate 9 , e . g . a silicon substrate 9 . Between the bottom contacts 8 and the conductive tracks 6 of the structured contact layer 4 a first solder 11 is arranged . The first solder 11 establishes a cohesive and electrical connection between the bottom contacts 8 of the optoelectronic semiconductor chips 7 and the conductive tracks 6 . Thus , a supply voltage can be applied to the optoelectronic semiconductor chips 7 .

[0037] The first solder 11 comprises a low melting temperature material , such as e . g . a SnBi-alloy . The first solder 11 can also comprise any other suitable first solder 11 . A low melting temperature solder 11 advantageously protects the foil 1 during the attachment of the optoelectronic semiconductor chips 7 since no critical temperatures are reached which could damage the foil 1 . E . g . , a PET- foil 1 comprises a melting point of 260 ° C, whereas SnBi comprises an eutectic melting point of 138 ° C .

[0038] Fig . 2 schematically shows a second method step of the method of producing the optoelectronic component . The elements shown in Fig . 2 are depicted in a cross-sectional side view . The reference numerals of Fig . 1 are maintained . In order to indicate that the optoelectronic component can comprise than two optoelectronic semiconductor chips 7 , the elements in Fig . 2 are shown in an interrupted view .

[0039] In the second method step, the foil 1 comprising the at least one optoelectronic semiconductor chip 7 is arranged with its inner side 2 at a first top side 13 of a first carrier 12 . The first carrier 12 furthermore comprises a first bottom side 14 opposite the first top side 13 and first side faces 15 extending between the first top side 13 and the first bottom side 14 .

[0040] The first carrier 12 comprises a metallic material , aluminium, glass a polymer or any other material . However, it is essential that the first carrier 12 is rigid as the foil 1 is flexible . Thus , the concept of optoelectronic semiconductor chips 7 on a foil 1 can be applied for rigid applications , such as videowalls or other display applications , especially such applications which require a mechanical stability . The first carrier 12 can also provide additional functionality, which however is not necessary .

[0041] To fix the foil 1 to the first carrier 12 , an adhesive interlayer 16 can be arranged between the first top side 13 of the first carrier 12 and the inner side 2 of the foil 1 . The adhesive interlayer 16 exemplarily covers the whole first top side 13 of the first carrier 12 . In another embodiment the adhesive interlayer can be applied only locally . The adhesive interlayer 16 can also be omitted . Instead, the foil 1 can be attached by other means or processes .

[0042] Fig . 3 schematically shows a third method step of the method of producing the optoelectronic component 17 . The elements shown in Fig . 3 are depicted in a cross-sectional side view . The reference numerals of Fig . 1 and 2 are maintained . Again, to indicate that more than two optoelectronic semiconductor chips 7 can be used, the elements in Fig . 3 are shown in an interrupted view .

[0043] In the state of Fig . 3 the production of a module 18 is completed . The module 18 can be taken by itsel f as the optoelectronic component 17 . In this case , the production of the optoelectronic component 17 is completed in the state shown in Fig . 3 . However, the third method step shown in Fig . 3 can be omitted . In this case , the production of the module 18 or, i f the module 18 forms the optoelectronic component 17 , the production of the optoelectronic component 17 is already completed in the state shown in Fig . 2 .

[0044] In the third method step, the foil 1 comprising the contact layer 4 is bent to the first bottom side 14 of the first carrier 12 such that the foil 1 is arranged with its inner side 2 at the first side faces 15 and at least partially at the first bottom side 14 of the first carrier 12 . Thus , the con- tact layer 4 arranged at the outer side 3 of the foil 1 is also arranged in regions of the first side faces 15 and partially in regions of the first bottom side 14 of the first carrier 12 . In other words , the foil 1 comprising the contact layer 4 is bent over the first side faces 15 of the first carrier 12 and to the first bottom side 14 of the first carrier 12 .

[0045] Parts of the contact layer 4 which are arranged at the first bottom side 14 of the first carrier 12 form first electrical contact pads 19 of the module 18 . The first contact pads 19 are arranged at the first bottom side 14 and connected to the conductive tracks 6 arranged at the first top side 12 of the first carrier 12 . Since the foil 1 and the contact layer 4 are bent to the first bottom side 14 there is no need for electrical vias extending from the first top side 13 to the first bottom side 14 to electrically connect the conductive tracks 6 and the first contact pads 19 . In contrast to the creation of such vias the bending of the foil 1 comprising the conductive layer 4 is a less complex and cheap process .

[0046] Fig . 4 schematically shows an additional and optional method step . The elements shown in Fig . 4 are depicted in a cross- sectional side view . The reference numerals of Fig . 1 to 3 are maintained . The elements in Fig . 4 are shown in an interrupted view to exemplarily indicate a plurality of optoelectronic semiconductor chips 7 .

[0047] Again, the module 18 can be taken by itsel f as the optoelectronic component 17 and the production of the optoelectronic component 17 is completed in the state shown in Fig . 4 after the additional method step . The step shown in Fig . 4 can be performed after the method step according to Fig . 2 or after the method step according to Fig . 3 .

[0048] In the additional step of Fig . 4 , a cover 35 is arranged to protect the contact layer 4 . The cover 35 is arranged at the first side faces 15 of the first carrier 12 , such that the cover 35 encompasses the first carrier 12 laterally . Also , the cover 35 is arranged such that it is at least partially arranged at the first top side 13 and at least partially arranged at the first bottom side 14 of the first carrier 12 . In other words , the cover 35 clasps the first carrier 12 laterally .

[0049] Thus , the contact layer 4 is covered and protected by the cover 35 , especially when the foil 1 is bent to the first bottom side 14 whereby the contact layer 4 extends along the first side faces 15 of the first carrier 12 and over its edges . The parts of the contact layer 4 forming the first contact pads 19 at the first bottom side 14 and the parts of the contact layer 4 forming the conductive tracks 6 at the first top side 13 , respectively, are also covered and protected at least partially by the cover 35 , especially in the regions of the edges of the first carrier 12 .

[0050] Arranging the cover at the first side faces 15 , the first top side 13 and the first bottom side 14 means that the foil 1 and the contact layer 4 and optionally the adhesive interlayer 16 are arranged between the first carrier 12 and the cover 35 . The cover 35 can comprise any suitable material to protect the contact layer 4 . Especially the cover 54 can comprise a dielectric material . However, the cover 35 can also be omitted .

[0051] Fig . 5 schematically shows further optional method steps of the method of producing the optoelectronic component 17 . The elements shown in Fig . 5 are depicted in a cross-sectional side view, again . The reference numerals of Fig . 1 to 3 are maintained . To indicate that more than two optoelectronic semiconductor chips 7 can be used per module 18 , the elements in Fig . 3 are shown in an interrupted view .

[0052] In Fig . 5 , a scenario is shown where the module 18 itsel f does not form the optoelectronic component 17 . Rather than that , the optoelectronic component 17 comprises a plurality of modules 18 . Exemplarily the optoelectronic component 17 comprises three modules 18 . The optoelectronic component 17 can comprise any number of modules 18 . Each module 18 is designed according to Fig . 3 . However, as the bending of the foil 1 to the first bottom side 14 of the first carrier 12 can be omitted, the modules 18 can alternatively be designed according to Fig . 2 . In this case , the foil 1 may be cut in the regions of the first side faces 15 of the first carrier 12 such that it does not overhang the first top side 13 . Also , the optoelectronic semiconductor chips 7 have to be electrically contacted di f ferently as no first contact pads 19 according to Fig . 3 are created . I f the modules 18 are provided with a cover 35 according to Fig . 4 the cover 35 can be removed before the further method steps according to Fig . 5 are performed to produce the optoelectronic component 17 .

[0053] In a further optional method step a plurality of first carriers 12 each comprising the foil 1 and the at least one optoelectronic semiconductor chip 7 is arranged at a second carrier 20 . In other words , the modules 18 are arranged at a second top side 21 of the second carrier 20 . The modules 18 are arranged such that the first bottom side 14 of the first carriers 12 are facing towards the second top side 21 of the second carrier 20 .

[0054] Furthermore , the first contact pads 19 are arranged at second electrical contact pads 23 of the second carrier 20 arranged at the second top side 21 . Each first contact pad 19 is arranged at a second contact pad 23 and electrically connected to it . In other words , the modules 18 are arranged at the second contact pads 23 such that each contact layer 4 arranged in a region of the first bottom side 14 of a first carrier 12 , is arranged at at least two second contact pads 23 , respectively, wherein each second contact pad 23 is contacted electrically to at least one conductive track 6 at the first top sides 13 of the first carriers 12 . A second solder 24 comprising a low melting point , especially a lower melting point than the foil 1 , can be arranged between the first contact pads 19 and the second contact pads 23 to establish an adhesive and electric connection between the first and the second contact pads 19 , 23 . For example , an SnBi-alloy can be used as the second solder 24 but the second solder 24 can e . g . comprise any other suitable alloy or material .

[0055] In an optional step, a black material 25 comprising black particles blended with a polymer or a plastic can arranged between the first carriers 12 of the modules 18 and the second carrier 20 as shown exemplarily in Fig . 5 . The black material 25 can enhance a lateral contrast when the optoelectronic semiconductor chips 7 are operated, e . g . when the first carrier 12 comprises glass . The black material can be arranged at the bottom sides 14 of the first carriers 12 before arranging the modules 18 at the second carrier 20 However, the black material 25 can be omitted . Alternatively, or in addition, the second carrier 20 can be black, comprising a plastic or a polymer and black particles embedded in the plastic / polymer .

[0056] In a further optional step, the modules 18 can be embedded in an encapsulation 26 as shown exemplarily in Fig . 5 . The encapsulation 26 can comprise silicone or in general another material , e . g . an elastomer . The encapsulation 26 comprises an encapsulation surface 27 . The encapsulation surface 27 is averted from the second top side 21 of the second carrier 20 . The modules 18 can be embedded in the encapsulation 26 completely . In another embodiment the encapsulation is flush with the optoelectronic semiconductor chips 7 . In this case , the encapsulation surface 27 is arranged in the same plane as emission surfaces 28 of the optoelectronic semiconductor chips 7 which are averted from the bottom contacts 8 .

[0057] In Fig . 5 a di f ferent scenario is shown, where the modules are not embedded completely in the encapsulation 26 . Also , the encapsulation 26 is not flush with the optoelectronic semiconductor chips 7 . Instead, a black layer 29 is arranged at an encapsulation surface 28 . The black layer 28 can also comprise black particles embedded in a polymer or a plastic . In the embodiment of Fig . 5 , the black layer 29 is flush with the optoelectronic semiconductor chips 7 , i . e . a surface 30 of the black layer 29 is flush with emission surfaces 28 of the optoelectronic semiconductor chips 7 which extending parallel to the first top sides 13 of the first carriers 12 and are averted from the bottom contacts 8 .

[0058] The optoelectronic component 17 of Fig . 5 can e . g . be designed as a videowall or any other display apparatus . In this case , the modules 18 each comprise a plurality of optoelectronic semiconductor chips 7 designed to emit electromagnetic radiation and arranged in a regular pattern, respectively .

[0059] The optoelectronic component 7 can for example be designed as an RGB-display or videowall comprising a plurality of modules 18 , wherein each module 18 comprises a regular array of RGB- LEDs .

[0060] To control the optoelectronic semiconductor chips 7 the optoelectronic component 17 comprises drivers 31 which are arranged at a second bottom side 22 of the second carrier 20 opposite the second first side 21 . The drivers 31 are designed as integrated circuits ( ICs ) and therefore can also be called driver ICs 31 . Exemplarily, the optoelectronic component 17 comprises four drivers 31 provided to control three modules 18 . However, the optoelectronic component 17 can comprise any number of drivers 31 , for example only one driver 31 or more drivers 31 , for any number of modules 18 . Advantageously, the arrangement of the optoelectronic semiconductor chips 7 and the arrangement of the drivers 31 are separated when producing the optoelectronic component 17 .

[0061] Third electrical contact pads 32 are arranged at the second bottom side 22 of the second carrier 20 . For each driver 31 at least two third contact pads 32 are arranged at the second bottom side 22 . Accordingly, each driver 31 comprises at least two further bottom contacts 33 . The drivers 31 are arranged such that each further bottom contact 33 of a driver is arranged at a third contact pad 32 , respectively . Between each third contact pad 32 and further bottom contact 33 a third solder 34 is arranged which for example can comprise SnBi or another alloy or material .

[0062] The second contact pads 23 and the third contact pads 32 are connected to each other, e . g . by vias extending from the second bottom side 22 to the second top side 21 of the second carrier 20 . Thus , the optoelectronic semiconductor chips 7 are connected to the drivers 31 .

[0063] The invention has been illustrated and described in detail with the aid of the preferred exemplary embodiments . Nevertheless , the invention is not restricted to the examples disclosed . Rather, other variants may be derived therefrom by a person skilled in the art without departing from the protective scope of the invention .

[0064] REFERENCE SYMBOLS foil inner side of the foil outer side of the foil structured contact layer surface of the structured contact layer conductive tracks optoelectronic semiconductor chip bottom contacts of a chip substrate of the optoelectronic semiconductor chip active region first solder first carrier first top side of the first carrier first bottom side of the first carrier side faces of the first carrier adhesive interlayer optoelectronic component module first contact pads of a module second carrier second top side of the second carrier second bottom side of the second carrier second contact pads of the second carrier second solder black material encapsulation surface of the encapsulation emission surface of a chip black layer surface of the black layer driver third contact pads of the second carrier further bottom contacts of a driver third solder cover

Claims

CLAIMS1. Optoelectronic component (17) , comprising a module (18) with a rigid first carrier (12) , a foil (1) , a structured contact layer (4) and at least one optoelectronic semiconductor chip (7) , wherein the foil (1) is arranged with its inner side (2) at a first top side (13) of the first carrier (12) , wherein the contact layer (4) is arranged at an outer side(3) of the foil (1) averted from the first top side (13) of the first carrier (12) , wherein the optoelectronic semiconductor chip (7) is arranged at a surface (5) of the contact layer (4) averted from the outer side (3) of the foil (1) .

2. The optoelectronic component (17) according to claim 1, wherein the foil (1) comprising the contact layer (4) is bent to a first bottom side (14) of the first carrier (12) opposite the first top side (13) such that the foil (1) additionally is arranged with its inner side (2) at first side faces (15) of the first carrier (12) and at least partially at the first bottom side (13) of the first carrier (12) and the contact layer (4) arranged at the outer side (3) of the foil (1) is additionally arranged in regions of the first side faces (15) and the first bottom side (14) of the first carrier (12) .

3. The optoelectronic component (17) according to one of the previous claims, wherein the optoelectronic semiconductor chip (7) is designed as a flip -chip comprising two bottom contacts (8) arranged at the surface (5) of the contact layer (4) .

4. The optoelectronic component (17) according to one of the previous claims, wherein an adhesive interlayer (16) is arranged between the first carrier (12) and the foil (1) .

5. The optoelectronic component (17) according to one of the previous claims, comprising a plurality of modules (18) according to one of the previous claims and a second carrier (20) , wherein the modules (18) are arranged at a second top side (21) of the second carrier (20) such that the first bottom sides (14) of the first carriers (12) are facing the second top side (21) of the second carrier (20) .

6. Optoelectronic component according to claims 2 and 5, wherein electrical contact pads (23) are arranged at the second top side (21) of the second carrier (20) , wherein the modules (17) are arranged at the contact pads(23) such that the contact layer (4) of each module (18) arranged in regions of the first bottom sides (14) of the first carriers (12) is arranged at at least two contact pads (23) , respectively .

7. The optoelectronic component (17) according to claim 5 or 6, wherein the modules (18) each comprise a plurality of optoelectronic semiconductor chips (7) designed to emit electromagnetic radiation and arranged in a regular pattern, respectively.

8. The optoelectronic component (17) according to one of the claims 5 to 67, wherein the modules (18) are embedded in an encapsulation (26) arranged at the second top side (21) of the second carrier (20) .

9. The optoelectronic component (17) according to claim 8, wherein a black layer (28) is arranged at an encapsulation surface (27) averted from the second top side (21) of the second carrier (20) .

10. The optoelectronic component (17) according to one of the previous claims 5 to 9,wherein a black material (25) is arranged between the first carriers (12) of the modules (18) and the second carrier (20) .

11. The optoelectronic component (17) according to one of the previous claims 5 to 10, wherein the second carrier (20) is black.

12. The optoelectronic component (17) according to one of the previous claims, wherein the first carrier (12) comprises a metallic material, aluminium, glass or a polymer.

13. Method of producing an optoelectronic component (17) comprising the following method steps:- arranging at least one optoelectronic semiconductor chip(7) at a surface (5) of a structured contact layer (4) arranged at an outer side (3) of a foil (1) ,- arranging the foil (1) comprising the at least one optoelectronic semiconductor chip (7) with its inner side (2) opposite the outer side (3) at a first top side (13) of a rigid first carrier (12) .

14. The method according to claim 13 comprising the following additional step:- bending the foil (1) comprising the contact layer (4) to the first bottom side (14) of the first carrier (12) such that the foil (1) additionally is arranged with its inner side (2) at first side faces (15) of the first carrier (12) and at least partially at the first bottom side (14) of the first carrier (12) and the contact layer (4) arranged at the outer side (3) of the foil (1) additionally is arranged in regions of the first side faces (15) and the first bottom side (14) of the first carrier (12) .

15. The method according to claim 13 or 14 comprising the following additional step:- arranging a plurality of first carriers (12) each comprising the foil (1) and the at least one optoelectronic semiconductor chip (7) , respectively, at a second top side (21) of a second carrier (20) such that the first bottom sides (14) of the first carriers (12) are facing the second top side (21) of the second carrier (20) .

Images