Semiconductor device

Abstract

The present invention suppresses the temperature rise of a semiconductor device. This semiconductor device comprises: a first snubber circuit element connected in parallel with a first switching element; a second snubber circuit element connected in parallel with a second switching element; an electrode P-side connected to the first switching element; and an electrode N-side connected to the second switching element. The first switching element and the second switching element are connected in series, the first snubber circuit element is connected to the electrode N-side, and the second snubber circuit element is connected to the electrode P-side.

Description

Semiconductor Devices

[0001] The technology disclosed in this specification relates to semiconductor technology.

[0002] In a semiconductor module that functions as both an insulated gate bipolar transistor (IGBT) and a freewheeling diode in a single element, such as a reverse conducting IGBT (RC-IGBT), direct lead bonding (DLB) wiring connection limits the path for dissipating heat generated by the switching element during switching, resulting in a problem of increased electrode temperature. Furthermore, there is a demand for a snubber circuit disposed in parallel near the switching element to effectively suppress surge voltages generated during switching. Here, a snubber circuit is a protective circuit provided to prevent malfunctions caused by a sudden voltage rise during switching.

[0003] In contrast, for example, Patent Document 1 (JP 2018-56221 A) discloses a semiconductor module in which a switching element and a circuit element are connected in parallel between two metal plates facing each other in the vertical direction, and the circuit elements are passive elements such as resistors or capacitors to form a snubber circuit.

[0004] JP 2018-56221 A

[0005] In the prior art, the circuit elements connected between two vertically opposing metal plates have a single wire on the input and output sides, so the configuration is limited to snubber circuits that can be connected with a single wire, such as RC or discharge-type RCD.

[0006] In this case, the heat generated from the switching element during switching may not be sufficiently dissipated, resulting in an increase in the temperature of the semiconductor device.

[0007] The technology disclosed in the present specification has been made in consideration of the problems described above, and is a technology for suppressing a temperature rise in a semiconductor device.

[0008] A semiconductor device that is a first aspect of the technology disclosed in the present specification comprises a first conductive pattern and a second conductive pattern that are provided spaced apart from each other on an upper surface of an insulating substrate, a first switching element that is provided on an upper surface of the first conductive pattern via a bonding material, a second switching element that is provided on an upper surface of the second conductive pattern via a bonding material, a first snubber circuit element that is connected in parallel with the first switching element, a second snubber circuit element that is connected in parallel with the second switching element, an electrode P side that is connected to the first switching element, and an electrode N side that is connected to the second switching element, wherein the first switching element and the second switching element are connected in series, the first snubber circuit element is connected to the electrode N side, and the second snubber circuit element is connected to the electrode P side.

[0009] According to at least a first aspect of the technology disclosed in the present specification, the snubber circuit element has multiple heat dissipation paths, thereby forming multiple paths for dissipating heat generated from the switching element during switching, thereby improving heat dissipation and reducing the electrode temperature.

[0010] Furthermore, objects, features, aspects, and advantages associated with the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below.

[0011] 1 is a circuit diagram showing an example of the configuration of a semiconductor device according to an embodiment; FIG. 2 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to an embodiment; FIG. 3 is a cross-sectional view schematically showing an example of the internal structure of an element of a non-discharge type RCD snubber circuit; FIG. 4 is a cross-sectional view schematically showing an example of the internal structure of an element of a non-discharge type RCD snubber circuit; FIG. 5 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to an embodiment; FIG. 6 is a circuit diagram showing an example of the configuration of a semiconductor device according to an embodiment; FIG. 7 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to an embodiment; FIG. 8 is a circuit diagram showing an example of the configuration of a semiconductor device according to an embodiment; FIG. 9 is a circuit diagram showing another example of the configuration of a semiconductor device according to an embodiment; FIG. 10 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to an embodiment;

[0012] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of explaining the technology, but these are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0013] The drawings are schematic, and for the sake of convenience, components may be omitted or simplified as appropriate. The relative sizes and positions of components shown in different drawings are not necessarily accurately depicted and may be changed as appropriate. Hatching may also be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the embodiments.

[0014] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

[0015] Furthermore, in the description given in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0016] Furthermore, in the description of this specification, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to make it easier to understand the contents of the embodiments, and the contents of the embodiments are not limited to the order that may result from these ordinal numbers.

[0017] Furthermore, in the description provided in this specification, terms that indicate specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments and have no relation to the positions or directions when the embodiments are actually implemented.

[0018] Furthermore, in the description of the present specification, when "the upper surface of ..." or "the lower surface of ..." is used, it is intended to include not only the upper surface or lower surface of the target component itself, but also a state in which another component is formed on the upper surface or lower surface of the target component. For example, when it is described as "B provided on the upper surface of A," it does not preclude the interposition of another component "C" between A and B.

[0019] First Embodiment A semiconductor device according to the present embodiment will be described below.

[0020] <Configuration of Semiconductor Device> Fig. 1 is a circuit diagram showing an example of the configuration of a semiconductor device according to the present embodiment, and Fig. 2 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to the present embodiment.

[0021] 1, an integrated switching element 4a consisting of an IGBT such as an RC-IGBT and a free wheel diode, and an integrated switching element 5a consisting of an IGBT such as an RC-IGBT and a free wheel diode, are connected in series. The integrated switching element 4a is formed by connecting an IGBT 42 and a free wheel diode 44 in anti-parallel. Similarly, the integrated switching element 5a is formed by connecting an IGBT 52 and a free wheel diode 54 in anti-parallel.

[0022] The integrated switching element 4a is connected in parallel to the upper arm snubber capacitor 6b and the upper arm snubber diode 6c. The snubber capacitor 6b and the snubber diode 6c are connected in series. The snubber capacitor 6b is disposed closer to the electrode P side 1a than the snubber diode 6c.

[0023] The integrated switching element 5a is connected in parallel to the lower-arm snubber capacitor 7b and the lower-arm snubber diode 7c. The snubber capacitor 7b and the snubber diode 7c are connected in series. The snubber capacitor 7b is located closer to the N-side electrode 3 than the snubber diode 7c.

[0024] The N-side electrode 3 is connected to the anode of the freewheeling diode 54 and the cathode of the snubber diode 7c. The N-side electrode 3 is also connected between the snubber capacitor 6b and the snubber diode 6c via the upper arm snubber resistor 6d. The snubber capacitor 6b, snubber diode 6c, and snubber resistor 6d form the upper arm non-discharge-type RCD snubber circuit element 6a. The N-side electrode 3 is connected to a wiring branching off from the output side of the non-discharge-type RCD snubber circuit element 6a.

[0025] The electrode P side 1a is connected to the cathode side of the freewheeling diode 44 and the anode side of the snubber diode 6c. The electrode P side 1a is also connected between the snubber capacitor 7b and the snubber diode 7c via a snubber resistor 7d on the lower arm side of the electrode P side 1b. The snubber capacitor 7b, the snubber diode 7c, and the snubber resistor 7d form a non-discharge-type RCD snubber circuit element 7a on the lower arm side. The electrode P side 1a is connected to the electrode P side 1b that branches off from the output side of the non-discharge-type RCD snubber circuit element 7a.

[0026] Furthermore, the electrode U side 2 is connected between the integrated switching element 4a and the integrated switching element 5a.

[0027] As shown in the example in FIG. 2 , in a semiconductor device configured with an upper arm and a lower arm, such as an intelligent power module (IPM), an insulating substrate 10 is bonded to the upper surface of a base substrate 11, and a conductive pattern 9 a on the upper arm side and a conductive pattern 9 b on the lower arm side are bonded to the upper surface of the insulating substrate 10 with a gap between them.

[0028] On the upper surface of the conductive pattern 9a, an integrated switching element 4a and a non-discharge type RCD snubber circuit element 6a having a single input side but multiple output side bonding wires are arranged in parallel (connected in parallel on the circuit), and are bonded together with a conductive bonding material 8. Similarly, on the upper surface of the conductive pattern 9b, an integrated switching element 5a and a non-discharge type RCD snubber circuit element 7a having a single input side but multiple output side bonding wires are arranged in parallel (connected in parallel on the circuit), and are bonded together with a conductive bonding material 8. Here, the bonding wires are wires for bonding the conductive bonding material. Hereinafter, it is assumed that the conductive bonding material 8 is used for all bonding.

[0029] The N-side electrode 3 is connected to the snubber capacitor 7b on the lower arm side of the non-discharge type RCD snubber circuit element 7a, the integrated switching element 5a on the lower arm side, and the snubber resistor 6d on the upper arm side of the non-discharge type RCD snubber circuit element 6a via conductive adhesive material 8.

[0030] The electrode U side 2 is joined to the lower arm conductive pattern 9b and is connected to the integrated switching element 4a and the non-discharge type RCD snubber circuit element 6a via a conductive bonding material 8. The electrode P side 1a is joined to the upper arm conductive pattern 9a. The electrode P side 1b is joined to the upper arm conductive pattern 9a and the lower arm snubber resistor 7d of the non-discharge type RCD snubber circuit element 7a. The entire semiconductor device is then encapsulated in a resin encapsulant 12.

[0031] 3 and 4 are cross-sectional views showing schematic examples of the internal structure of elements in a non-discharge type RCD snubber circuit.

[0032] As shown in the example in Figure 3, the non-discharge-type RCD snubber circuit element 6a has a snubber capacitor 6b on its input side and a snubber resistor 6d on its output side, connected in series with the snubber capacitor 6b. Furthermore, the non-discharge-type RCD snubber circuit element 6a has a snubber diode 6c on its output side (the wiring connected to the N-side electrode 3) branching off from between the snubber capacitor 6b and the snubber resistor 6d. The snubber resistor 6d is connected in parallel with the snubber diode 6c. In other words, the non-discharge-type RCD snubber circuit element 6a has a snubber capacitor 6b on its input side and a snubber diode 6c on its output side, connected in series with the snubber capacitor 6b. Furthermore, the non-discharge-type RCD snubber circuit element 6a has a snubber resistor 6d on its output side (the wiring connected to the N-side electrode 3) branching off from between the snubber capacitor 6b and the snubber diode 6c. As shown in FIG. 3, the non-discharge type RCD snubber circuit element 6a has a single connection wire on the input side and two connection wires on the output side.

[0033] 4, the non-discharge-type RCD snubber circuit element 7a has a snubber diode 7c on the input side and a snubber capacitor 7b connected in series with the snubber diode 7c on the output side. The non-discharge-type RCD snubber circuit element 7a also has a snubber resistor 7d on the output side (the wiring connected to the electrode P side 1a) that branches off from between the snubber capacitor 7b and the snubber diode 7c. The snubber capacitor 7b is connected in parallel with the snubber resistor 7d. As shown in the example of FIG. 4, the non-discharge-type RCD snubber circuit element 7a has a single connecting wiring on the input side and two connecting wirings on the output side.

[0034] As described above, by providing the non-discharge-type RCD snubber circuit element 6a and the non-discharge-type RCD snubber circuit element 7a, which have a single connection wire on the input side and two connection wires on the output side, multiple paths are formed for dissipating heat generated from the switching elements during switching, thereby improving heat dissipation and reducing the electrode temperature.

[0035] Furthermore, the magnetic energy stored in the electrodes due to electromagnetic induction caused by switching can be released through the non-discharge type RCD snubber circuit elements 6a and 7a, thereby suppressing surge voltages.

[0036] Furthermore, charging and discharging of the snubber capacitors 6b and 7b occurs with each switching operation, but in the non-discharge type RCD snubber circuit elements 6a and 7a, current flows through the snubber resistors 6d and 7d only during discharge, which reduces loss in the resistance and makes the device suitable for high-frequency switching.

[0037] Second Embodiment A semiconductor device according to this embodiment will be described. In the following description, components similar to those described in the above embodiments will be denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0038] 5 is a cross-sectional view showing a schematic example of the configuration of a semiconductor device according to this embodiment. In this embodiment, in addition to the configuration shown in FIG. 2, a non-discharge-type RCD snubber circuit element 6a is arranged near the terminal of the U-side electrode 2, and a non-discharge-type RCD snubber circuit element 7a is arranged near the terminal of the N-side electrode 3.

[0039] That is, in Figure 5, of the integrated switching element 4a and non-discharge type RCD snubber circuit element 6a provided on the upper surface of the conductive pattern 9a, the non-discharge type RCD snubber circuit element 6a is positioned closer to the terminal portion of the electrode U side 2 than the integrated switching element 4a, and of the integrated switching element 5a and non-discharge type RCD snubber circuit element 7a provided on the upper surface of the conductive pattern 9b, the non-discharge type RCD snubber circuit element 7a is positioned closer to the terminal portion of the electrode N side 3 than the integrated switching element 5a.

[0040] With the above-described configuration, the non-discharge type RCD snubber circuit element 6a and the non-discharge type RCD snubber circuit element 7a are disposed near the terminal portions of the electrodes, thereby improving heat dissipation.

[0041] Third Embodiment A semiconductor device according to this embodiment will be described. In the following description, components similar to those described in the above embodiments will be denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0042] <Configuration of Semiconductor Device> Fig. 6 is a circuit diagram showing an example of the configuration of a semiconductor device according to this embodiment, and Fig. 7 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to this embodiment.

[0043] 6, a high-frequency switching element 13 such as a SiC-MOSFET (metal-oxide-semiconductor field-effect transistor) and a high-frequency switching element 14 are connected in series. The high-frequency switching element 13 is formed of a SiC-MOSFET 13a and a body diode 13b formed between the source and drain due to the structure of the SiC-MOSFET. Similarly, the high-frequency switching element 14 is formed of a SiC-MOSFET 14a and a body diode 14b formed between the source and drain due to the structure of the SiC-MOSFET.

[0044] The high-frequency switching element 13 is connected in parallel to the upper arm snubber capacitor 6b and the upper arm snubber diode 6c, which are connected in series.

[0045] The high-frequency switching element 14 is connected in parallel to the lower-arm snubber capacitor 7b and the lower-arm snubber diode 7c, which are connected in series.

[0046] The N-side electrode 3 is connected to the anode side of the body diode 14b and the cathode side of the snubber diode 7c.

[0047] The electrode P side 1a is connected to the cathode side of the body diode 13b and the anode side of the snubber diode 6c.

[0048] Furthermore, the electrode U side 2 is connected between the high frequency switching element 13 and the high frequency switching element 14 .

[0049] As shown in the example in Figure 7, an insulating substrate 10 is bonded to the upper surface of a base substrate 11, and an upper arm side conductive pattern 9a and a lower arm side conductive pattern 9b are bonded to the upper surface of the insulating substrate 10 with a gap between them.

[0050] A high-frequency switching element 13 and a non-discharge type RCD snubber circuit element 6a are arranged in parallel on the upper surface of the conductive pattern 9a (connected in parallel on the circuit), and are joined together with a conductive bonding material 8. Similarly, a high-frequency switching element 14 and a non-discharge type RCD snubber circuit element 7a are arranged in parallel on the upper surface of the conductive pattern 9b (connected in parallel on the circuit), and are joined together with a conductive bonding material 8.

[0051] The N-side electrode 3 is connected to the snubber capacitor 7b on the lower arm side of the non-discharge type RCD snubber circuit element 7a, the high-frequency switching element 14, and the snubber resistor 6d on the upper arm side of the non-discharge type RCD snubber circuit element 6a via conductive bonding material 8.

[0052] The electrode U side 2 is joined to the lower arm conductive pattern 9b and is connected to the high-frequency switching element 13 and the non-discharge-type RCD snubber circuit element 6a via a conductive bonding material 8. The electrode P side 1a is joined to the upper arm conductive pattern 9a. The electrode P side 1b is joined to the upper arm conductive pattern 9a and the lower arm snubber resistor 7d of the non-discharge-type RCD snubber circuit element 7a. The entire semiconductor device is then encapsulated in a resin encapsulant 12.

[0053] 7, the non-discharge-type RCD snubber circuit element 6a and the non-discharge-type RCD snubber circuit element 7a may be arranged in the same manner as in Fig. 5. That is, the non-discharge-type RCD snubber circuit element 6a may be arranged farther from the terminal portion of the electrode U side 2 than the high-frequency switching element 13, and the non-discharge-type RCD snubber circuit element 7a may be arranged farther from the terminal portion of the electrode N side 3 than the high-frequency switching element 14.

[0054] As described above, by providing the non-discharge-type RCD snubber circuit elements 6a and 7a, which have a single connection wire on the input side and two connection wires on the output side, multiple paths are formed for dissipating heat generated from the switching elements during switching. This improves heat dissipation and reduces electrode temperatures. Furthermore, the high-frequency switching elements 13 and 14 enable high-frequency switching.

[0055] Fourth Embodiment A semiconductor device according to this embodiment will be described. In the following description, components similar to those described in the above embodiments will be denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0056] <Configuration of Semiconductor Device> FIG. 8 is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to this embodiment.

[0057] As shown in the example in Figure 8, an insulating substrate 10 is bonded to the upper surface of a base substrate 11, and a conductive pattern 9a on the upper arm side and a conductive pattern 9b on the lower arm side are bonded to the upper surface of the insulating substrate 10 with a gap between them.

[0058] On the upper surface of conductive pattern 9a, a high-frequency switching element 13, a non-discharge-type RCD snubber circuit element 6a, and a non-discharge-type RCD snubber circuit element 15 are arranged in parallel (connected in parallel on the circuit), and are bonded together with a conductive bonding material 8. Similarly, on the upper surface of conductive pattern 9b, a high-frequency switching element 14, a non-discharge-type RCD snubber circuit element 7a, and a non-discharge-type RCD snubber circuit element 16 are arranged in parallel (connected in parallel on the circuit), and are bonded together with a conductive bonding material 8.

[0059] On the upper surface of conductive pattern 9a, high-frequency switching element 13 is sandwiched between non-discharge-type RCD snubber circuit element 6a and non-discharge-type RCD snubber circuit element 15. Similarly, on the upper surface of conductive pattern 9b, high-frequency switching element 14 is sandwiched between non-discharge-type RCD snubber circuit element 7a and non-discharge-type RCD snubber circuit element 16.

[0060] The N-side electrode 3 is connected to the snubber capacitor 7b on the lower arm side of the non-discharge type RCD snubber circuit element 7a, the high-frequency switching element 14, the non-discharge type RCD snubber circuit element 15, the non-discharge type RCD snubber circuit element 16, and the snubber resistor 6d on the upper arm side of the non-discharge type RCD snubber circuit element 6a via conductive bonding material 8.

[0061] The electrode U side 2 is joined to the lower arm conductive pattern 9b, and is connected to the high-frequency switching element 13, the non-discharge-type RCD snubber circuit element 6a, and the non-discharge-type RCD snubber circuit element 15 via a conductive bonding material 8. The electrode P side 1a is joined to the upper arm conductive pattern 9a. The electrode P side 1b is joined to the upper arm conductive pattern 9a, the lower arm snubber resistor 7d of the non-discharge-type RCD snubber circuit element 7a, and the non-discharge-type RCD snubber circuit element 16. The entire semiconductor device is then encapsulated in a resin encapsulant 12.

[0062] In FIG. 8, the high frequency switching element 13 may be replaced by an integrated switching element 4a, and the high frequency switching element 14 may be replaced by an integrated switching element 5a.

[0063] 8, the non-discharge-type RCD snubber circuit element 6a and the non-discharge-type RCD snubber circuit element 7a may be arranged in the same manner as in Fig. 5. That is, the non-discharge-type RCD snubber circuit element 6a may be arranged farther from the terminal portion of the electrode U side 2 than the high-frequency switching element 13, and the non-discharge-type RCD snubber circuit element 7a may be arranged farther from the terminal portion of the electrode N side 3 than the high-frequency switching element 14.

[0064] In addition to the non-discharge type RCD snubber circuit element 15 and the non-discharge type RCD snubber circuit element 16 in FIG. 8, a non-discharge type RCD snubber circuit element may be provided on the upper surface of the conductive pattern 9a or the upper surface of the conductive pattern 9b.

[0065] As described above, by further providing a non-discharge type RCD snubber circuit element that forms a heat dissipation path, the heat dissipation performance of the heat generated from the switching element during switching is improved, and the electrode temperature can be reduced.

[0066] Fifth Embodiment A semiconductor device according to this embodiment will be described. In the following description, components similar to those described in the above embodiments will be denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0067] <Configuration of the Semiconductor Device> Fig. 9 is a circuit diagram showing an example of the configuration of a semiconductor device according to this embodiment. As shown in the example in Fig. 9, the P-electrode 1b of the circuit configuration 100 shown in Fig. 1 is connected to the +electrode 19, a capacitor 17c is provided between the P-electrode 1b and the N-electrode 3, and a diode 17b is provided on the +electrode 19. The diode 17b and the capacitor 17c constitute a boost circuit secondary circuit element 17a.

[0068] Fig. 10 is a circuit diagram showing another example of the configuration of a semiconductor device according to this embodiment. As shown in the example in Fig. 10, P-electrode 1a of circuit configuration 100 shown in Fig. 1 is connected to +electrode 19, capacitor 18c is provided between P-electrode 1a and N-electrode 3, and inductor 18b is provided on +electrode 19. Inductor 18b and capacitor 18c constitute step-down circuit secondary circuit element 18a.

[0069] 11 is a cross-sectional view showing a schematic example of the configuration of a semiconductor device according to this embodiment, in which the electrode P side 1a is omitted for convenience.

[0070] As shown in the example in Figure 11, an insulating substrate 10 is bonded to the upper surface of a base substrate 11, and a conductive pattern 9a on the upper arm side and a conductive pattern 9b on the lower arm side are bonded to the upper surface of the insulating substrate 10 with a gap between them.

[0071] A high-frequency switching element 13 and a non-discharge type RCD snubber circuit element 6a are arranged in parallel on the upper surface of the conductive pattern 9a (connected in parallel on the circuit), and are joined together with a conductive bonding material 8. Similarly, a high-frequency switching element 14 and a non-discharge type RCD snubber circuit element 7a are arranged in parallel on the upper surface of the conductive pattern 9b (connected in parallel on the circuit), and are joined together with a conductive bonding material 8.

[0072] The N-side electrode 3 is connected to a snubber capacitor 7b on the lower arm side of the non-discharge-type RCD snubber circuit element 7a, a high-frequency switching element 14, and a snubber resistor 6d on the upper arm side of the non-discharge-type RCD snubber circuit element 6a, all via conductive bonding material 8. The N-side electrode 3 is also connected to a +side electrode 19 and a P-side electrode 1b via a boost circuit secondary circuit element 17a and conductive bonding material 8. Note that a step-down circuit secondary circuit element 18a may be interposed in place of the boost circuit secondary circuit element 17a.

[0073] The electrode U side 2 is joined to the conductive pattern 9b on the lower arm side, and is connected to the high-frequency switching element 13 and the non-discharge-type RCD snubber circuit element 6a via a conductive bonding material 8. The electrode P side 1b is joined to the conductive pattern 9a on the upper arm side and to the snubber resistor 7d on the lower arm side of the non-discharge-type RCD snubber circuit element 7a. The entire semiconductor device is then encapsulated in a resin encapsulant 12.

[0074] In FIG. 11, the high frequency switching element 13 may be replaced by an integrated switching element 4a, and the high frequency switching element 14 may be replaced by an integrated switching element 5a.

[0075] 11, the non-discharge-type RCD snubber circuit element 6a and the non-discharge-type RCD snubber circuit element 7a may be arranged in the same manner as in Fig. 2. That is, the non-discharge-type RCD snubber circuit element 6a may be arranged farther from the terminal portion of the electrode U side 2 than the high-frequency switching element 13, and the non-discharge-type RCD snubber circuit element 7a may be arranged farther from the terminal portion of the electrode N side 3 than the high-frequency switching element 14.

[0076] 12 and 13 are cross-sectional views showing an example of the internal structure of the boost circuit secondary circuit element 17a and the step-down circuit secondary circuit element 18a, respectively.

[0077] 12, boost circuit secondary circuit element 17a is provided with diode 17b on the + side and capacitor 17c connected in series with diode 17b on the - side (N side). Furthermore, boost circuit secondary circuit element 17a has a wiring branching from between diode 17b and capacitor 17c connected to its P side. As shown in the example in FIG. 12, boost circuit secondary circuit element 17a has a single connection wiring on its - side (N-side electrode 3), and connection wirings on both the + side electrode 19 and the P-side electrode 1b (i.e., a total of multiple wirings).

[0078] 13, the step-down circuit secondary circuit element 18a has an inductor 18b on its positive side and a capacitor 18c connected in series with the inductor 18b on its negative side (N side). A wiring branching from between the inductor 18b and the capacitor 18c is connected to the positive side of the step-down circuit secondary circuit element 18a. As shown in the example of FIG. 13, the step-down circuit secondary circuit element 18a has a single connection wiring on its negative side (N-side electrode 3), and connection wirings on the positive side electrode 19 and the positive side electrode 1a (i.e., a total of multiple wirings).

[0079] As described above, the number of heat dissipation paths for dissipating heat generated from the switching elements is increased, thereby reducing the electrode temperature. Also, by connecting an external power supply circuit (voltage boost circuit secondary circuit element 17a, voltage drop circuit secondary circuit element 18a) to the positive electrode 19 and the negative electrode 3, the voltage between the positive electrode 19 and the negative electrode 3 can be increased or decreased.

[0080] <Regarding the Effects Produced by the Multiple Embodiments Described Above> Next, examples of the effects produced by the multiple embodiments described above will be described. Note that in the following description, the effects will be described based on the specific configurations exemplified in the multiple embodiments described above, but these may be replaced with other specific configurations exemplified in the present specification to the extent that similar effects are produced. In other words, for convenience, only one of the associated specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another associated specific configuration.

[0081] Furthermore, the replacement may be made across multiple embodiments, i.e., configurations illustrated in different embodiments may be combined to produce the same effect.

[0082] According to the embodiment described above, the semiconductor device includes a first conductive pattern and a second conductive pattern spaced apart from each other and provided on the upper surface of an insulating substrate 10, a first switching element, a second switching element, a first snubber circuit element, a second snubber circuit element, an electrode P side 1a (or an electrode P side 1b), and an electrode N side 3. Here, the first conductive pattern corresponds to, for example, the conductive pattern 9a. The second conductive pattern corresponds to, for example, the conductive pattern 9b. The first switching element corresponds to, for example, the integrated switching element 4a, the high-frequency switching element 13, etc. The second switching element corresponds to, for example, the integrated switching element 5a, the high-frequency switching element 14, etc. The first snubber circuit element corresponds to, for example, the non-discharge type RCD snubber circuit element 6a, etc. The second snubber circuit element corresponds to, for example, the non-discharge type RCD snubber circuit element 7a, etc. The integrated switching element 4a is provided on the upper surface of the conductive pattern 9a via a conductive bonding material 8. The integrated switching element 5a is provided on the upper surface of the conductive pattern 9b via a conductive bonding material 8. The non-discharge type RCD snubber circuit element 6a is connected in parallel to the integrated switching element 4a. The non-discharge type RCD snubber circuit element 7a is connected in parallel to the integrated switching element 5a. The electrode P side 1a is connected to the integrated switching element 4a. The electrode N side 3 is connected to the integrated switching element 5a. The integrated switching element 4a and the integrated switching element 5a are connected in series. The non-discharge type RCD snubber circuit element 6a is connected to the electrode N side 3. The non-discharge type RCD snubber circuit element 7a is connected to the electrode P side 1a via the electrode P side 1b.

[0083] With this configuration, the non-discharge-type RCD snubber circuit elements 6a and 7a have multiple heat dissipation paths on the output side, providing multiple paths for dissipating heat generated from the switching elements during switching. This improves heat dissipation and reduces electrode temperatures. Furthermore, magnetic energy stored in the electrodes due to electromagnetic induction caused by switching can be released through the non-discharge-type RCD snubber circuit, thereby suppressing surge voltages.

[0084] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0085] Furthermore, according to the embodiment described above, the non-discharge-type RCD snubber circuit element 6a includes a first snubber capacitor, a first snubber diode, and a first snubber resistor. Here, the first snubber capacitor corresponds, for example, to snubber capacitor 6b. The first snubber diode corresponds, for example, to snubber diode 6c. The first snubber resistor corresponds, for example, to snubber resistor 6d. The snubber diode 6c is connected in series with the snubber capacitor 6b. The snubber resistor 6d is provided on a wiring branching from between the snubber capacitor 6b and the snubber diode 6c and connected to the N-side electrode 3. With this configuration, the snubber capacitor is charged and discharged with each switching operation. However, in the non-discharge-type RCD snubber circuit, current flows through the snubber resistor only during discharge. This reduces loss in the snubber resistor and enables high-frequency switching.

[0086] Furthermore, according to the embodiment described above, the snubber capacitor 6b and the snubber diode 6c are arranged in this order from the side closest to the electrode P 1a in the circuit: snubber capacitor 6b, snubber diode 6c. With this configuration, magnetic energy stored in the electrode due to electromagnetic induction that occurs with switching can be released through the non-discharge type RCD snubber circuit, thereby suppressing surge voltage.

[0087] Furthermore, according to the embodiment described above, the non-discharge-type RCD snubber circuit element 7a includes a second snubber capacitor, a second snubber diode, and a second snubber resistor. Here, the second snubber capacitor corresponds, for example, to snubber capacitor 7b. The second snubber diode corresponds, for example, to snubber diode 7c. The second snubber resistor corresponds, for example, to snubber resistor 7d. The snubber diode 7c is connected in series with the snubber capacitor 7b. The snubber resistor 7d is provided on a wiring (electrode P-side 1b) that branches from between the snubber capacitor 7b and snubber diode 7c and is connected to the electrode P-side 1a. With this configuration, the snubber capacitor is charged and discharged with each switching operation. However, in the non-discharge-type RCD snubber circuit, current flows through the snubber resistor only during discharge. This reduces loss in the snubber resistor and enables high-frequency switching.

[0088] Furthermore, according to the embodiment described above, the snubber capacitor 7b and snubber diode 7c are arranged in this order from the side closest to the electrode N-side 3. With this configuration, magnetic energy stored in the electrodes due to electromagnetic induction that occurs with switching can be released through the non-discharge type RCD snubber circuit, thereby suppressing surge voltages.

[0089] Furthermore, according to the embodiment described above, the semiconductor device includes the electrode U-side 2 connected between the integrated switching element 4a and the integrated switching element 5a. The non-discharge-type RCD snubber circuit element 6a is arranged closer to the terminal of the electrode U-side 2 than the integrated switching element 4a. The non-discharge-type RCD snubber circuit element 7a is arranged closer to the terminal of the electrode N-side 3 than the integrated switching element 5a. With this configuration, the non-discharge-type RCD snubber circuit elements 6a and 7a are arranged closer to the terminal of the electrodes, thereby improving heat dissipation.

[0090] Furthermore, according to the embodiment described above, the integrated switching element 4a includes an IGBT 42 and a freewheeling diode 44 connected in anti-parallel to the IGBT 42. Furthermore, the integrated switching element 5a includes an IGBT 52 and a freewheeling diode 54 connected in anti-parallel to the IGBT 52. With this configuration, the non-discharge-type RCD snubber circuit element 6a and the non-discharge-type RCD snubber circuit element 7a have multiple heat dissipation paths on the output side, thereby forming multiple paths for dissipating heat generated from the switching elements as they switch. This improves heat dissipation and makes it possible to reduce the electrode temperature.

[0091] Furthermore, according to the embodiment described above, high-frequency switching element 13 includes SiC-MOSFET 13a and body diode 13b structurally formed between the source and drain of SiC-MOSFET 13a. Also, high-frequency switching element 14 includes SiC-MOSFET 14a and body diode 14b structurally formed between the source and drain of SiC-MOSFET 14a. With this configuration, high-frequency switching element 13 and high-frequency switching element 14 enable high-frequency switching.

[0092] Furthermore, according to the embodiment described above, the semiconductor device includes a third snubber circuit element connected in parallel with the high-frequency switching element 13 and a fourth snubber circuit element connected in parallel with the high-frequency switching element 14. Here, the third snubber circuit element corresponds to, for example, the non-discharge-type RCD snubber circuit element 15. Furthermore, the fourth snubber circuit element corresponds to, for example, the non-discharge-type RCD snubber circuit element 16. The non-discharge-type RCD snubber circuit element 6a and the non-discharge-type RCD snubber circuit element 15 are arranged on the upper surface of the conductive pattern 9a, sandwiching the high-frequency switching element 13 therebetween. The non-discharge-type RCD snubber circuit element 7a and the non-discharge-type RCD snubber circuit element 16 are arranged on the upper surface of the conductive pattern 9b, sandwiching the high-frequency switching element 14 therebetween. With this configuration, the further inclusion of a non-discharge-type RCD snubber circuit element that forms a heat dissipation path improves the heat dissipation performance of heat generated from the switching elements during switching, thereby reducing the electrode temperature.

[0093] Furthermore, according to the embodiment described above, the semiconductor device includes the + electrode 19 connected to the P electrode 1b, the capacitor 17c provided by connecting the P electrode 1b and the N electrode 3, and the diode 17b provided on the + electrode 19. With this configuration, by connecting the boost circuit secondary circuit element 17a, which is an external power supply circuit, to the + electrode 19 and the N electrode 3, it is possible to boost the voltage between the P electrode 1b and the N electrode 3.

[0094] Furthermore, according to the embodiment described above, the semiconductor device includes a positive electrode 19 connected to the P electrode 1a, a capacitor 18c provided by connecting the P electrode 1a and the N electrode 3, and an inductor 18b provided on the positive electrode 19. With this configuration, by connecting the step-down circuit secondary circuit element 18a, which is an external power supply circuit, to the positive electrode 19 and the N electrode 3, it is possible to step down the voltage between the P electrode 1a and the N electrode 3.

[0095] <Regarding Modifications of the Multiple Embodiments Described Above> In the multiple embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may also be described, but these are merely examples in all aspects and are not limiting.

[0096] Therefore, countless modifications and equivalents not shown as examples are contemplated within the scope of the technology disclosed in the present specification, including, for example, modifying, adding, or omitting at least one component, and further, extracting at least one component from at least one embodiment and combining it with a component from another embodiment.

[0097] Furthermore, in at least one embodiment described above, when a material name or the like is stated without being specifically specified, unless a contradiction arises, it is assumed that the material in question includes other additives, such as alloys.

[0098] Furthermore, unless a contradiction arises, when it is stated in the above-described embodiments that "one" component is provided, "one or more" of that component may be provided.

[0099] Furthermore, each component in the embodiments described above is a conceptual unit, and the scope of the technology disclosed in this specification includes cases where one component is made up of multiple structures, cases where one component corresponds to a part of a structure, and even cases where multiple components are provided in one structure.

[0100] Furthermore, each of the components in the embodiments described above includes structures having other structures or shapes as long as they perform the same function.

[0101] Furthermore, the descriptions in this specification are incorporated by reference for all purposes related to the present technology, and none of them are admitted to be prior art.

[0102] DESCRIPTION OF SYMBOLS 1a Electrode P side, 1b Electrode P side, 2 Electrode U side, 3 Electrode N side, 4a Integrated switching element, 5a Integrated switching element, 6a Non-discharge type RCD snubber circuit element, 6b Snubber capacitor, 6c Snubber diode, 6d Snubber resistor, 7a Non-discharge type RCD snubber circuit element, 7b Snubber capacitor, 7c Snubber diode, 7d Snubber resistor, 8 Conductive bonding material, 9a Conductive pattern, 9b Conductive pattern, 10 Insulating substrate, 11 Base substrate, 12 Resin sealing material, 13 High frequency switching element, 13a SiC-MOSFET, 13b Body diode, 14 High frequency switching element, 14a SiC-MOSFET, 14b Body diode, 15 Non-discharge type RCD snubber circuit element, 16 Non-discharge type RCD snubber circuit element, 17a Boost circuit secondary side circuit element, 17b Diode, 17c capacitor, 18a step-down circuit secondary circuit element, 18b inductor, 18c capacitor, 19 electrode + side, 42 IGBT, 44 freewheeling diode, 52 IGBT, 54 freewheeling diode, 100 circuit configuration.

Claims

1. A semiconductor device comprising: a first conductive pattern and a second conductive pattern spaced apart from each other and provided on the upper surface of an insulating substrate; a first switching element provided on the upper surface of the first conductive pattern via a bonding material; a second switching element provided on the upper surface of the second conductive pattern via a bonding material; a first snubber circuit element connected in parallel with the first switching element; a second snubber circuit element connected in parallel with the second switching element; an electrode P connected to the first switching element; and an electrode N connected to the second switching element, wherein the first switching element and the second switching element are connected in series, the first snubber circuit element connected to the electrode N, and the second snubber circuit element connected to the electrode P.

2. A semiconductor device according to claim 1, wherein the first snubber circuit element comprises: a first snubber capacitor; a first snubber diode connected in series with the first snubber capacitor; and a first snubber resistor provided on a wiring branching from between the first snubber capacitor and the first snubber diode and connected to the N-side electrode.

3. A semiconductor device according to claim 2, wherein the first snubber capacitor and the first snubber diode are arranged in the order of the first snubber capacitor and the first snubber diode from the side closest to the electrode P on the circuit.

4. A semiconductor device according to any one of claims 1 to 3, wherein the second snubber circuit element comprises: a second snubber capacitor; a second snubber diode connected in series with the second snubber capacitor; and a second snubber resistor provided on a wiring branching from between the second snubber capacitor and the second snubber diode and connected to the electrode P side.

5. A semiconductor device according to claim 4, wherein the second snubber capacitor and the second snubber diode are arranged in the order of the second snubber capacitor and the second snubber diode from the side closest to the electrode N on the circuit.

6. A semiconductor device according to any one of claims 1 to 5, further comprising an electrode U connected between the first switching element and the second switching element, wherein the first snubber circuit element is arranged closer to the terminal portion on the electrode U side than the first switching element, and the second snubber circuit element is arranged closer to the terminal portion on the electrode N side than the second switching element.

7. A semiconductor device according to any one of claims 1 to 6, wherein the first switching element comprises a first IGBT and a first freewheeling diode connected in anti-parallel to the first IGBT, and the second switching element comprises a second IGBT and a second freewheeling diode connected in anti-parallel to the second IGBT.

8. A semiconductor device according to any one of claims 1 to 6, wherein the first switching element comprises a first MOSFET and a first body diode that is the body diode of the first MOSFET, and the second switching element comprises a second MOSFET and a second body diode that is the body diode of the second MOSFET.

9. A semiconductor device according to any one of claims 1 to 8, further comprising: a third snubber circuit element connected in parallel with the first switching element; and a fourth snubber circuit element connected in parallel with the second switching element, wherein the first snubber circuit element and the third snubber circuit element are arranged on the upper surface of the first conductive pattern with the first switching element sandwiched therebetween; and the second snubber circuit element and the fourth snubber circuit element are arranged on the upper surface of the second conductive pattern with the second switching element sandwiched therebetween.

10. A semiconductor device according to any one of claims 1 to 9, further comprising: a positive electrode connected to the positive electrode; a capacitor connecting the positive electrode and the negative electrode; and a diode connected to the positive electrode.

11. A semiconductor device according to any one of claims 1 to 9, further comprising: a positive electrode connected to the positive electrode; a capacitor connecting the positive electrode and the negative electrode; and an inductor provided on the positive electrode.

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