Semiconductor device heating apparatus

Abstract

A semiconductor device heating apparatus, comprising a middle substrate, middle heating sections, and middle supporting groups. Each middle supporting group comprises middle insulating supporting members detachably arranged on the top surface of the middle substrate. A middle supporting through groove is formed in the top of each middle insulating supporting member. The middle insulating supporting members are arranged in sequence along the coiling direction of corresponding middle heating sections, a middle supporting structure for embedding a corresponding middle heating section is formed on each middle supporting through groove, and two ends of the middle heating section extend towards the middle substrate and penetrate through the middle substrate. Middle portions of every adjacent middle insulating supporting members in each middle supporting group are in contact with each other or there is a gap therebetween. In each middle heating section, the orthographic projection of the part located on the middle of each middle insulating supporting member on the middle substrate is blocked by a middle blocking member of the corresponding middle insulating supporting member. Therefore, the reliability of supporting the middle heating sections in a high-temperature environment is improved, thereby achieving stable supporting, and reducing and preventing direct thermal radiation of the heating sections to metal components under the heating sections.

Description

Semiconductor equipment heating device Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a heating device for semiconductor equipment. Background Art

[0002] Semiconductor processing techniques that require high temperatures and oxidizing gases, such as the oxygen-dependent gallium oxide growth process, pose a significant negative impact on heaters due to the demanding process conditions. Commonly used heating filament materials, such as tungsten and graphite, react violently with oxygen and are therefore unsuitable. To ensure oxidation resistance, corrosion-resistant metals such as iron-chromium-aluminum alloys or molybdenum silicide are commonly used for the heater filaments and the electrode plates beneath them.

[0003] However, these corrosion-resistant materials exhibit significant softening at high temperatures. Metal materials such as the electrode plates positioned beneath the heating wires are susceptible to softening if exposed to the direct heat radiation from the heating wires for extended periods. For example, the iron-chromium-aluminum alloy 0Cr27AL7Mo2 has a maximum operating temperature of 1400°C, but its melting point is around 1520°C. Therefore, the softening of heating wires made of this alloy at high temperatures is not negligible. Molybdenum disilicide, while having a melting point of up to 2030°C, also softens at temperatures above 1300°C, making it difficult to support the heating wires.

[0004] Summary of the Invention

[0005] The object of the present invention is to provide a semiconductor equipment heating device that can stably support a heating section at high temperatures, especially a heating section that is prone to softening, and is conducive to reducing or preventing direct heat radiation from the heating section to the metal parts below it.

[0006] To achieve the above objectives, the present invention provides a semiconductor device heating device, comprising:

[0007] middle base plate;

[0008] Several middle heating sections;

[0009] a plurality of middle support groups, wherein each of the middle heating segments is detachably embedded in each of the middle support groups and exposes the top of the middle heating segment, and both ends of each of the middle heating segments extend toward the middle base plate and penetrate the middle base plate, and each of the middle heating segments is electrically insulated from the middle base plate;

[0010] Each of the central support groups includes a plurality of central insulating support members detachably mounted on the top surface of the central substrate, a central support through-slot being provided on the top of each of the central insulating support members, and in each of the central support groups, the central insulating support members are sequentially arranged along the winding direction of the corresponding embedded central heating segment so that each of the central support through-slots forms a central support structure for embedding the corresponding central heating segment;

[0011] In each of the middle support groups, the middle parts of adjacent middle insulating support members are in surface contact with each other or have a gap. In the middle heating section, the positive projection of the part above the middle part of each middle insulating support member toward the middle substrate is a blockage corresponding to the middle part of the middle insulating support member.

[0012] The beneficial effects of the semiconductor equipment heating device provided by the present invention are: in each of the central support groups, each central insulating support member is arranged in sequence along the winding direction of the corresponding embedded central heating section so that each of the central support grooves forms a central support structure to embed the corresponding central heating section; in each of the central support groups, the middle parts of adjacent central insulating support members are in surface contact with each other or have a gap, and in the central heating section, the positive projection of the part located above the middle part of each central insulating support member toward the central substrate is a blockage of the middle part of the corresponding central insulating support member, which improves the reliability of the support of the central heating section in a high temperature environment, realizes stable support, and is conducive to reducing or preventing the direct heat radiation of the heating section to the metal parts below it.

[0013] Optionally, at least a portion of the middle insulating support member is detachably connected to the top surface of the middle substrate.

[0014] Optionally, in the middle support groups radially adjacent to each other along the middle substrate, the middle parts of adjacent middle insulating support members belonging to different middle support groups are in surface contact with each other or have gaps therebetween.

[0015] Optionally, at least one limit member is provided on the top surface of the middle substrate, and the limit member is close to either end of the middle support group. A rotating member is rotatably provided on the top of the limit member to rotate axially around the limit member. The rotating member is abutted against the middle insulating support member located at one end of the middle support group along the rotation direction and is located between the middle of the middle insulating support member and the middle substrate.

[0016] Optionally, each of the central insulating support members includes a central blocking member, the central supporting groove provided on the top of the central blocking member, and a mounting portion provided on the bottom of the central blocking member, the mounting portion is detachably provided on the top surface of the central substrate, the central blocking members of adjacent central insulating support members are in surface contact with each other or have a gap, and the positive projection of the part of the central heating section located above the central blocking member of the central insulating support member toward the central substrate is blocked by the corresponding central blocking member.

[0017] Optionally, it also includes several central insulating sleeves arranged near the ends of each of the central support groups, and the central insulating sleeves are passed through the central substrate or are arranged below the central substrate, so that the ends corresponding to the central heating sections extend within the central insulating sleeves, or extend within the central insulating sleeves after passing through the central substrate.

[0018] Optionally, the middle substrate includes an insulating substrate, and the insulating substrate includes a ceramic substrate.

[0019] Optionally, the semiconductor device heating device further includes:

[0020] a side substrate surrounding the middle substrate;

[0021] A plurality of first edge heating segments and a plurality of second edge heating segments are electrically insulated from the edge substrate;

[0022] A plurality of side insulating support groups are spaced around the middle base plate and detachably mounted on the side base plate, wherein the height of the side insulating support groups is not less than that of the middle support group;

[0023] A first side support structure extending along the winding direction of the corresponding first side heating segment is provided on the top of each side insulating support group, and each first side support structure is arranged at intervals around the middle substrate and is embedded with the first side heating segment in a one-to-one correspondence;

[0024] A second side support structure is further provided on the top of each side insulation support group, extending along the winding direction of the corresponding second side heating segment. Each second side support structure is arranged at intervals around the middle substrate and is embedded with the second side heating segment in a one-to-one correspondence.

[0025] The top of each of the first side heating segments and each of the second side heating segments is exposed, and both ends extend toward the side substrate and penetrate the side substrate;

[0026] The distance between adjacent first side support structures and second side support structures is smaller than the distance between adjacent middle support groups along the middle substrate.

[0027] Optionally, the side substrate includes at least two arc-shaped plates arranged at intervals around the middle substrate and a connecting plate arranged above the adjacent arc-shaped plates. The several side insulation support groups are detachably clamped on each of the arc-shaped plates in sequence around the middle substrate. The two ends of the connecting plate extend into the adjacent side insulation support groups respectively. The two ends of each first side heating segment and each second side heating segment extend toward the nearby connecting plate and pass through the connecting plate. Each first side heating segment and each second side heating segment are electrically insulated from the connecting plate.

[0028] Optionally, the semiconductor equipment heating device also includes a plurality of side insulating sleeves passed through the connecting plate or provided below the connecting plate; the two ends of each first side heating section and each second side heating section near the connecting plate respectively pass through the connecting plate and extend into the corresponding insulating sleeve below, or extend into the insulating sleeve passed through the connecting plate.

[0029] Optionally, the semiconductor equipment heating device also includes at least one side heating section electrically insulated from the edge substrate, and the outer wall of each edge insulation support group is provided with at least one side support structure extending along the winding direction of the side heating section, and the at least one side heating section is correspondingly embedded in each side support structure with the side exposed, and both ends of the side heating section extend toward the edge substrate and pass through the edge substrate. When the number of the side support structures is at least 2, each side support structure is arranged along the axial direction of the corresponding edge insulation support group.

[0030] Optionally, each of the edge insulation support groups includes a plurality of edge insulation support members that are detachably arranged along the extension direction of each of the arc-shaped plates, a first edge support groove and a second edge support groove located outside the first edge support groove are arranged on the top of each of the edge insulation support members, and each of the edge insulation support members of each of the insulation support groups is detachably arranged on the edge substrate along the circumference of the edge substrate, and each of the first edge support grooves forms the first edge support structure, and each of the second edge support grooves forms the second edge support structure.

[0031] Optionally, each of the edge insulation support groups includes a plurality of edge insulation support members that are detachably arranged along the extension direction of each of the arc-shaped plates, and the outer wall of each of the edge insulation support members is provided with at least one side support groove, and each of the side support grooves forms the at least one side support structure.

[0032] Optionally, the semiconductor equipment heating device also includes a plurality of side insulating sleeves passed through the connecting plate or located below the connecting plate, and the two ends of each side heating section respectively pass through the nearby connecting plate and extend into a corresponding side insulating sleeve below, or extend into a nearby insulating sleeve passed through the connecting plate.

[0033] Optionally, a bottom through groove is provided at the bottom of each edge insulation support member of each edge insulation support group, and the arc-shaped plates are sequentially passed through each bottom through groove and are detachably mounted with each edge insulation support member in the middle of the side wall of the corresponding bottom through groove. The arc-shaped plates and each bottom through groove form a through structure with openings on both sides, and the two ends of the connecting plate extend into adjacent through structures respectively, or are detachably mounted in adjacent through structures.

[0034] Optionally, among the side insulating support members that are detachably mounted on each arc-shaped plate, there is a distance between at least one group of adjacent side insulating support members.

[0035] Optionally, the edge substrate includes an insulating substrate, and the insulating substrate includes a ceramic substrate.

[0036] Optionally, the semiconductor device heating device also includes at least two electrode plates suspended below the middle substrate and located on the same layer, each of the electrode plates is connected to the middle substrate via an insulating fixing member, and any adjacent electrode plates have a distance between each other for electrical insulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] FIG1 is a schematic diagram of the assembly structure of several middle support groups on a middle substrate provided by an embodiment of the present invention;

[0038] FIG2 is a top view of a semiconductor device heating device provided by an embodiment of the present invention;

[0039] FIG3 is a schematic structural diagram of a middle insulating sleeve provided by an embodiment of the present invention;

[0040] FIG4 is a schematic diagram of the assembly structure of the middle insulating sleeve and the middle substrate provided by an embodiment of the present invention;

[0041] FIG5 is a schematic diagram of an assembly structure in which a plurality of middle insulating support members are installed on a middle substrate to form a plurality of middle support groups according to an embodiment of the present invention;

[0042] FIG6 is a schematic diagram of a structure formed by installing several middle heating sections corresponding to the structure shown in FIG5 according to an embodiment of the present invention;

[0043] FIG7 is a schematic diagram of the assembly structure of several middle support groups provided in an embodiment of the present invention;

[0044] FIG8 is a schematic structural diagram of a middle insulating support member provided by an embodiment of the present invention;

[0045] FIG9 is a schematic structural diagram of a middle substrate provided by an embodiment of the present invention;

[0046] FIG10 is a schematic diagram of an assembly structure in which a stopper and a middle insulating support member are installed on a middle substrate according to an embodiment of the present invention;

[0047] FIG11 is a top view of another semiconductor device heating device provided by an embodiment of the present invention;

[0048] FIG12 is a schematic diagram of an assembly structure in which an edge insulating support group is installed on an edge substrate according to an embodiment of the present invention;

[0049] FIG13 is a schematic structural diagram of a first edge insulating support member provided by an embodiment of the present invention;

[0050] FIG14 is a schematic structural diagram of a second edge insulating support member provided by an embodiment of the present invention;

[0051] FIG15 is a perspective view of another semiconductor device heating device provided by an embodiment of the present invention;

[0052] FIG16 is a schematic structural diagram of an edge substrate provided by an embodiment of the present invention;

[0053] FIG17 is a schematic diagram of an assembly structure in which an edge insulating support member is installed on an edge substrate according to an embodiment of the present invention;

[0054] FIG18 is a schematic diagram of a partial structure of a semiconductor device heating device according to an embodiment of the present invention;

[0055] FIG19 is a schematic diagram of the assembly structure between the edge substrate, electrode plate, heat insulation plate and edge insulation sleeve provided by an embodiment of the present invention;

[0056] FIG20 is a schematic diagram of the assembly structure between the middle substrate, the side substrate, the heat insulation plate and the electrode plate according to an embodiment of the present invention;

[0057] FIG21 is a schematic structural diagram of an electrode plate provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0058] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0059] An embodiment of the present invention provides a semiconductor device heating device that can stably support a heating body, especially a softened heating body, at high temperatures, and is beneficial for reducing or preventing direct heat radiation from the heating body to metal parts below it.

[0060] Example 1

[0061] The present embodiment provides a semiconductor heating device, as shown in Figures 1 and 2, comprising a central substrate 11, a plurality of central heating sections 2, and a plurality of central support groups 40. Each of the central heating sections 2 is detachably embedded in each of the central support groups 40, and the top of the central heating section 2 is exposed. The two ends of each of the central heating sections 2 extend toward the central substrate 11 and pass through the central substrate 11. Each of the central heating sections 2 is electrically insulated from the central substrate 11. Each of the central support groups 40 provides stable support for the corresponding embedded central heating section 2. The top of each of the central heating sections 2 is exposed to facilitate rapid upward transfer of heat to improve heating efficiency.

[0062] In this embodiment, both ends of each central heating segment 2 extend downward through the central substrate 11 and are respectively connected to the positive heating segment connecting electrode and the negative heating segment connecting electrode. The positive heating segment connecting electrode and the negative heating segment connecting electrode are respectively connected to the positive electrode plate and the negative electrode plate to form a current loop. The specific implementation method is conventional in the art.

[0063] 1 and 2 , the central substrate 11 is provided with a plurality of central substrate through-holes 111, with two of these central substrate through-holes 111 located between adjacent central support groups 40 along the circumference of the central substrate 11. A central heating section 2 is embedded in a central support group 40, with its ends extending toward the central substrate through-holes 111 located near the ends of the central support group 40 where the central heating section 2 is located, and passing through the central substrate 11 through the central substrate through-holes 111.

[0064] In some embodiments, the middle heating section 2 is a heating wire or a heating coil.

[0065] In some embodiments, the middle heating section 2 is made of an iron-chromium-aluminum alloy or molybdenum silicide.

[0066] In some embodiments, the central substrate 11 is an insulating substrate. When the central substrate 11 is an insulating substrate, each of the central heating segments 2 passes through the central substrate 11 and is electrically insulated from each other. The central heating segments 2 and the central substrate 11 may be in contact with each other. For example, the diameter of the central substrate through-hole 111 is adapted to the outer diameter of the adjacent corresponding central heating segment 2.

[0067] In some embodiments, the insulating substrate is a ceramic substrate. In some specific embodiments, the ceramic substrate is a high-temperature resistant ceramic substrate, such as a boron nitride ceramic substrate or an alumina ceramic substrate.

[0068] In some embodiments, the central substrate 11 is a conductive substrate. When the central substrate 11 is a conductive substrate, each central heating segment 2 passes through the central substrate 11 and does not contact the central substrate 11 to achieve electrical insulation. That is, the aperture of the central substrate through-hole 111 is larger than the outer diameter of the adjacent corresponding central heating segment 2, and the central heating segment 2 passes through the middle of the central substrate through-hole 111 without contacting the inner wall of the central substrate through-hole 111.

[0069] In some embodiments, a plurality of central insulating sleeves are provided on the top surface of the central substrate 11, and the two ends of the central heating section 2 respectively pass through the adjacent corresponding central insulating sleeves. By providing the central insulating sleeves on the central substrate 11, not only can the electrical insulation relationship between the end extension structures of different central heating sections 2 be strengthened to prevent short circuits, but also when the central substrate 11 is a conductive substrate, the electrical insulation relationship between the central substrate 11 and each of the central heating sections 2 can be strengthened. Referring to Figures 1, 3 and 4, the central insulating sleeves shown in Figure 3 include a top insulating sleeve 112 and a bottom insulating sleeve 113. The outer diameter of the top insulating sleeve 112 is larger than the inner diameter of the central substrate through-hole 111, and the outer diameter of the bottom insulating sleeve 113 is equivalent to the inner diameter of the central substrate through-hole 111, and the inner diameter is equivalent to or larger than the outer diameter of the end of the corresponding central heating section 2 that passes through and adapts to the central heating section 2. The bottom insulating sleeve 113 passes through the middle substrate through hole 111 , and the top insulating sleeve 112 is blocked by the middle substrate 11 and is located above the middle substrate 11 .

[0070] In some embodiments, the central insulating sleeve is located below the central substrate 11, and the central heating section 2 extends within the corresponding central insulating sleeve after passing through the central substrate 11, thereby strengthening the electrical insulation relationship between the end extension structures of different central heating sections 2 to prevent short circuit.

[0071] In some embodiments, the outer diameter of the bottom insulating sleeve 113 is smaller than the inner diameter of the middle substrate through hole 111 .

[0072] In some specific embodiments, the conductive substrate is a high-temperature resistant metal substrate, such as a molybdenum silicide substrate.

[0073] 1, 5, and 6, each central support group 40 includes a plurality of central insulating support members 4. The central insulating support members 4 of each central support group 40 are sequentially arranged along the winding direction of the corresponding central heating section 2 and are detachably mounted on the top surface of the central base plate 11. A central support slot 41 is provided on the top of each central insulating support member 4 to support the corresponding section of the central heating section 2.

[0074] In this embodiment, the central insulating support members 4 of each central support group 40 are arranged in sequence along the winding direction of the corresponding central heating section 2, and each central support slot 41 is formed with a central support structure to embed the corresponding central heating section 2. Referring to Figures 7 and 8, taking the first central support group 401 as an example, the 19 central insulating support members 4 in the first central support group 401 are arranged in sequence in an arc shape, and the side openings of adjacent central support slots 41 are opposite to each other. The central support slot 41 of each central insulating support member 4 extends along the winding direction of the corresponding embedded central heating section (not shown in the figure), so that the central heating section (not shown in the figure) can be embedded and fixed in each central support slot 41.

[0075] The central heating section 2 is embedded in the central support groove 41 so that a portion of the central heating section 2 contacts the central support groove 41, thereby providing stable support for the central heating section 2. Furthermore, in some embodiments, the depth of the central support groove 41 is d / 4-2d / 3, where d is the average diameter of the central heating section 2 in contact with the central support groove 41. This allows the top of the central heating section 2 in contact with the central support groove 41 to be exposed, facilitating rapid upward heat transfer and improving heating efficiency.

[0076] 7 and 8 , each of the central insulating supports 4 includes a central blocking member 42, a central supporting slot 41 provided on the top surface of the central blocking member 42, and a mounting portion 43 provided on the bottom surface of the central blocking member 42. Specifically, a U-shaped member (not shown) is provided on the top surface of the central blocking member 42, and the U-shaped member (not shown) has the central supporting slot 41.

[0077] In this embodiment, referring to Figures 5 to 7, in the same central support group 40, the middle parts of adjacent central insulating support members 4 are in surface contact with each other or have gaps, that is, the adjacent central blocking members 42 are in surface contact with each other or have gaps, and the positive projection of the part of the central heating section 2 located above the middle part of each central insulating support member 4 toward the central substrate 11 is the corresponding central blocking of the central insulating support member 4. In the same central support group 40, the central heating section 2 is supported by the central support groove 41 on the top surface of each central insulating support member 4. When the central heating section 2 softens at high temperature, the central blocking members 42 in the middle of adjacent central insulating support members 4 are in surface contact with each other or have gaps, and the positive projection of the part of the central heating section 2 located above the middle of each central insulating support member 4 toward the central substrate 11 is the corresponding central blocking of the central insulating support member 4, so that a stable supporting structure is formed between adjacent central blocking members 42. Even if the softening degree of the central heating section 2 above a central blocking member 42 is higher, causing the central heating section 2 to bend toward the central substrate 11, the corresponding central blocking member can prevent the central heating section 2 from excessively bending toward the central substrate 11 due to softening and provide a good supporting effect for the softened central heating section 2. If the distance between adjacent middle insulating parts 4 is too large, once the softening degree of the middle heating section 2 is too high, it will bend from the position between the adjacent middle insulating parts 4 toward the middle substrate 11, thereby affecting the supporting effect. Even when the middle substrate 11 is a conductive substrate, once the middle heating section 2 contacts the conductive substrate due to softening, a short circuit may be caused.

[0078] In this embodiment, in the radially adjacent middle support groups 40 along the middle substrate 11, the middle portions of adjacent middle insulating support members 4 belonging to different middle support groups 40 are in surface contact with each other or have a gap. Referring to Figures 1, 7, and 8, in the first middle support group 401 and the second middle support group 402 radially adjacent along the middle substrate 11, the middle portions of adjacent middle insulating support members 4 are in surface contact with each other or have a gap. Specifically, in the first middle support group 401 and the second middle support group 402 radially adjacent along the middle substrate 11, adjacent middle blocking members 42 in different middle support groups 40 are in surface contact with each other or have a gap.

[0079] The radial dimension of the aforementioned "gap" can be flexibly adjusted according to the process temperature conditions and the temperature resistance of the middle heating section 2. The gap size between adjacent middle blocking members 42 is necessary to be able to stably support the corresponding middle heating section 2 and prevent the corresponding middle heating section 2 from undergoing significant deformation from the gap toward the middle substrate 11.

[0080] In some embodiments, the gap between adjacent middle blocking members 42 in the same middle support group 40, and / or the gap between adjacent middle blocking members 42 belonging to different middle support groups 40 may not exceed any one of 5 mm, 4 mm, 3 mm, 2 mm or 1 mm.

[0081] 8 and 9 , a plurality of mounting adapter holes 112 are provided on the top surface of the middle substrate 11 , and the mounting adapter holes 112 are matched with the mounting portion 43 of the middle insulating support 4 so that the middle insulating support 4 can be detachably arranged on the top surface of the middle substrate 11 .

[0082] In some embodiments, the middle insulating support member 4 is detachably mounted on the middle substrate 11. Specifically, the mounting portion 43 is detachably mounted on the top surface of the middle substrate 11. More specifically, referring to Figures 8 and 9, the mounting adapter hole 112 has an insertion groove 1121 and an abutment groove 1122 that pass through the top surface of the middle substrate 11 and are connected to each other, the insertion groove 1121 and the abutment groove 1122 are connected to form a "T" shape, the mounting portion 43 includes a bottom end portion 431 and a sliding adapter portion 432 located above the bottom end portion 431, and the size of the mounting portion 43 located between the middle blocking member 42 and the sliding adapter portion 432 is larger than the size of the sliding adapter portion 432, the size of the bottom end portion 431 is adapted to the insertion groove 1121 so as to be able to pass through the insertion groove 1121 and move relative to the insertion groove 1121, the size of the insertion groove 1121 is larger than the sliding adapter portion 432, and the size of the mounting portion 43 located between the middle blocking member 42 and the sliding adapter portion 432 allows it to slide in the abutment groove 1122 along the extension direction of the abutment groove 1122. When installing the middle insulating support 4 on the top surface of the middle substrate 11, first pass the bottom end 431 of the mounting portion 42 through the insertion groove 1121 and make the sliding adapter portion 432 radially face the abutment groove 1122, then move the middle insulating support 4 along the extension direction of the abutment groove 1122 so that the sliding adapter portion 432 moves along the extension direction of the abutment groove 1122 to the end of the abutment groove 1122 away from the insertion groove 1121 and make the mounting portion 43 located between the middle blocking member 42 and the sliding adapter portion 432 cross the abutment groove 1122 and contact the middle substrate 11 to realize the clamping of the middle insulating support 4.

[0083] In this embodiment, each of the central insulating support members 4 is detachably fixedly connected to the top surface of the central substrate 11, and the size and position direction of the central support groove 41 on the top of each of the central insulating support members 4 are adaptively designed according to the shape, size and extension direction of the corresponding embedded central heating section 2, so as to be able to stably support the corresponding central heating section 2.

[0084] In some embodiments, in the same central support group 40, at least part of the central insulating support members 4 are detachably connected to the top surface of the central substrate 11, that is, the central insulating support members 4 can still be appropriately moved relative to the central substrate 11 after being detachably arranged on the top surface of the central substrate 11. This movable arrangement is conducive to improving the installation and adaptation flexibility of the corresponding supported central heating section 2, that is, in the process of embedding and installing the corresponding central heating section 2 on the central support group 40, the winding direction of the central heating section 2 is fixed. In order to adapt to the winding direction of the central heating section 2, the previous central After the insulating support 4 is embedded in the middle heating section 2, even if there is some deviation between the structural direction of the adjacent middle insulating support 4 for embedding the middle heating section 2 and the direction of the section adapted to be embedded in the corresponding middle heating section 2, there is no need to replace the middle insulating support 4. Instead, the position of the middle insulating support 4 is adjusted by utilizing the feature that the adjacent middle insulating support 4 can move relative to the middle substrate 11 so that the structure used to embed the heating section can be embedded in the corresponding heating section without changing the original winding direction of the middle heating section 2, thereby reducing the precision requirements for the adaptive processing of the middle support through groove 41.

[0085] In some embodiments, as shown in Figure 10, at least one limit member 62 is rotatably provided on the top surface of the middle substrate 11, and the limit member 62 is close to the middle insulating support member 4 at one end of the middle support group 40. A rotating member 61 is rotatably provided on the top of the limit member 62 to rotate axially around the limit member 62. The rotating member 61 is against the middle insulating support member 4 at one end of the middle support group 40 along the rotation direction and is located below the middle of the middle insulating support member 4, that is, between the middle of the middle insulating support member 4 and the middle substrate 11. By providing a limit member 62 and a rotating member 61 and allowing the rotating member 61 to counteract the central insulating support member 4 at one end of the central support group 40 along the rotation direction, the relative static relationship between the central support group 40 and the central substrate 11 can be strengthened. In particular, when at least part of the central insulating support member 4 in the central support group 40 is detachably connected to the central substrate 11, it is beneficial to strengthen the stable supporting effect of the central support group 40 on the corresponding embedded central heating section 2.

[0086] Specifically, referring to Figures 7 and 10, taking the adjacent first central insulating support member 44 and second central insulating support member 45 in the second central support group 402 as an example, the first central insulating support member 44 is the central insulating support member 4 located at one end of the second central support group 402, and a limiting member 62 is provided on the central substrate 11 near the first central insulating support member 44. A rotating member 61 is rotatably provided on the top of the limiting member 62 so that the rotating member 61 can rotate axially around the limiting member 42. The rotating portion 61 abuts against the first central insulating support member 44 along its rotational direction and is located below the first central insulating support member 44, so that the middle portions of the adjacent central insulating support members 4 in the second central support group 402 can contact each other and remain relatively stationary with respect to the central substrate 11.

[0087] In some embodiments, the rotating member 61 shown in FIG. 10 is located on the top surface or above the middle substrate 11 and contacts the structure of the mounting portion 43 shown in FIG. 8 located between the middle blocking member 42 and the sliding adapter portion 432 .

[0088] In some embodiments, referring to Figures 7 and 10, the rotating member 61 is located between the central insulating support member 4 (i.e., the first central insulating support member 44) at one end of the second central support group 402 and the central substrate through hole 111 adjacent to the central insulating support member 4.

[0089] Example 2

[0090] Another semiconductor heating device provided in this embodiment, as shown in FIG11 , includes a central substrate 11, central support groups 40 disposed on the central substrate 11, and central heating segments 2 embedded in the central support groups 40. For details on the structural relationship and specific implementation of the central substrate 11, the central support groups 40, and the central heating segments 2, please refer to the discussion in the first embodiment.

[0091] With further reference to Figures 11 and 12, the semiconductor heating device of this embodiment further includes a side substrate 12 surrounding the central substrate 11, a plurality of first side heating segments 31 and a plurality of second side heating segments 32 that are electrically insulated from the side substrate 12, and a plurality of side insulating support groups 50. The plurality of side insulating support groups 50 are spaced around the central substrate 11 and are detachably disposed on the side substrate 12. The plurality of first side heating segments 31 are spaced circumferentially around the central substrate 11 to form a side heating structure surrounding the central substrate 11, and the plurality of second side heating segments 32 are spaced apart around the side heating structure, and each second side heating segment 32 corresponds to a first side heating segment 31 along the radial direction of the central substrate 11. The top of each of the first side heating segments 31 and each of the second side heating segments 32 is exposed, and both ends extend toward the side substrate 12 and penetrate the side substrate 12.

[0092] In some embodiments, the height of the side insulating support group 50 is not lower than the height of the middle support group 40 , so that each side insulating support group 50 surrounds the middle substrate 11 to form a structure that is conducive to heat collection.

[0093] In some embodiments, the heating body of each side heating segment (the first side heating segment 31 and each second side heating segment 32 ) is a heating wire or a heating coil.

[0094] In some embodiments, the constituent material of each edge heating section (the first edge heating section 31 and each second edge heating section 32 ) is iron-chromium-aluminum alloy or molybdenum silicide.

[0095] In some embodiments, the side substrate 12 is an insulating substrate or a conductive substrate. The structural relationship between the side substrate 12 and each of the first side heating segments 31 and each of the second side heating segments 32 when the side substrate 12 is an insulating substrate or a conductive substrate, respectively, can be found in the structural relationship between the middle heating segment 2 and the middle substrate 11 described in Example 1, and is not further described here.

[0096] In this embodiment, each side insulating support group is provided with a first side support structure and a second side support structure at the top. Referring to Figures 11 and 12 , in the side insulating support group 50, a first side support structure 501 is provided at the top, extending along the winding direction of the first side heating segment 31, such that the first side heating segment 31 is embedded in the first side support structure 501 with the top exposed. A second side support structure 502 is also provided, extending along the winding direction of the corresponding second side heating segment 32, so that the different side heating segments are electrically insulated from each other. The first side support structures 501 of each side insulation support group 50 are arranged at intervals around the middle substrate 11 and are embedded one by one with corresponding first side heating sections 31. The second side support structures 502 of each side insulation support group 50 are arranged at intervals around the middle substrate 11 and are embedded one by one with corresponding second side heating sections 32. In each side insulation support group 50, the second side support structure 502 and the first side support structure 501 correspond radially along the middle substrate 11, that is, the second side support structure 502 is arranged outside the first side support structure 501.

[0097] In some embodiments, within the same side insulating support group 50, the spacing between the first side support structure 501 and the second side support structure 502 is smaller than the spacing between radially adjacent central support groups 40 along the central substrate 11, such that the coiling density of the side heating segments is greater than that of the central heating segments. The high coiling density of the side heating segments allows the heat provided by the side to effectively compensate for heat lost outward from the central segment.

[0098] In some embodiments, each edge insulation support group 50 includes a plurality of edge insulation support members 5 that are detachably arranged in sequence along the circumference of the edge substrate 12 to form a plurality of first edge support structures 501 and a plurality of second edge support structures 502 that support each edge heating section. Specifically, referring to Figures 12 and 13, the edge insulation support member 5 includes a first edge support through groove 51 at the top and a second edge support through groove 52 located outside the first edge support through groove 51. Each of the edge insulation support members 5 is detachably arranged on the edge substrate 12 along the circumference of the edge substrate 12, and each of the first edge support through grooves 51 is enclosed to form the first edge support structure 501, and each of the second edge support through grooves 52 is enclosed to form the second edge support structure 502. In some embodiments, the edge substrate 12 and each of the edge insulation support members 5 are detachably clamped. 12 and 13 , the bottom of the edge insulating support member 5 is provided with a bottom through groove that opens downward and is U-shaped, which is formed by a first edge side wall 541 and a second edge side wall 542 that are opposite to each other, and a side top wall 543 that connects the first edge side wall 541 and the second edge side wall 542. The first edge side wall 541 and the second edge side wall 542 are opposite to each other along the radial direction of the edge substrate 12. The edge substrate 12 passes through the U-shaped through groove in the circumferential direction and can be detachably clamped in the bottom through groove. More specifically, the first edge side wall 541 and the second edge side wall 542 are respectively provided with a first side wall through groove 551 and a second side wall through groove 552 to clamp the edge substrate 12. The shape, size and specific position of the first side wall through groove 551 and the second side wall through groove 552 are adapted according to the structure at which the edge substrate 12 is clamped.

[0099] In some embodiments, the depth of the first edge supporting through groove 51 is d / 4-2d / 3, where d is the average diameter of the corresponding edge heating section in which the edge supporting through groove is embedded.

[0100] In some embodiments, the depth of the second edge supporting through groove 52 is d / 4-2d / 3, where d is the average diameter of the corresponding edge heating section in which the edge supporting through groove is embedded.

[0101] In some embodiments, the semiconductor device heating apparatus further includes at least one side heating segment electrically insulated from the side substrate 12. In some specific embodiments, the material of the side heating segment and its compatibility with the side substrate 12 are described in the description of the middle heating segment 2 and the middle substrate 11 in Example 1 and are not further elaborated here.

[0102] In some embodiments, the outer side wall of each of the side insulation support groups 50 is provided with at least one side support structure extending along the winding direction of the side heating section, and the at least one side heating section is correspondingly embedded in each of the side support structures and the side (i.e., the side radially away from the middle substrate 11 along the middle substrate 11) is exposed, and both ends of the side heating section extend toward the side substrate 12 and pass through the side substrate 12. When the number of the side support structures is at least 2, each of the side support structures is arranged along the axial direction of the corresponding side insulation support group 50.

[0103] In some embodiments, referring to Figures 14 and 18, the difference between the edge insulating support member 5 shown in Figure 14 and the edge insulating support member 5 shown in Figure 13 is that the outer wall of the edge insulating support member 5 is provided with at least one side support groove 53, and each of the side support grooves 53 forms at least one side support structure for embedding the at least one side heating section 33.

[0104] In some embodiments, with reference to Figures 15 to 17, the edge substrate 12 includes at least two curved plates 121, and a connecting plate 122 is detachably provided at both ends of adjacent curved plates 121. Some of the edge insulating supports 5 are sequentially attached to and detachably provided on the corresponding curved plates 121 along the extension direction of the corresponding curved plates 121, and the connecting plates 122 are respectively provided with mounting holes 1221 passing through the connecting plates 122 at both ends corresponding to each edge heating segment, so that the two ends of each edge heating segment extend in the corresponding mounting holes 1221 to be electrically connected to the electrode plate located below. Specifically, the curved plates 121 sequentially pass through the bottom through groove that opens downward and is U-shaped, which is surrounded by the opposite first edge side walls 541 and the second edge side walls 542, and the edge top wall 543 connecting the first edge side walls 541 and the second edge side walls 542. More specifically, the arc plate 121 can be detachably clamped in the middle of the bottom through groove, that is, the arc plate 121 is clamped in the first side wall through groove 551 and the second side wall through groove 552 to achieve relative fixation.

[0105] In some embodiments, the plurality of side insulating support groups 50 are sequentially and detachably mounted on the curved plates 121 around the central substrate 11. The ends of the connecting plates 122 extend into adjacent side insulating support groups 50. The ends of each first side heating segment 31 and each second side heating segment 32 extend toward and through the adjacent connecting plates 122. Each first side heating segment 31 and each second side heating segment 32 are electrically insulated from the connecting plates 122. The connecting plates 122 are mounted above adjacent curved plates 121. 13 and 17 , a plurality of side insulating supports 5 are sequentially detachably mounted on the arc-shaped plate 121, and the connecting plate 122 is mounted above the adjacent arc-shaped plate 121. The arc-shaped plate 121 and the bottom through groove of the insulating support 5 mounted on the arc-shaped plate 121 form a through structure with openings on both sides. The through structure is surrounded by the first side wall 541, the second side wall 542, the side top wall 543 and the arc-shaped plate 121. The two ends of the connecting plate 122 extend toward the adjacent side insulating support 5 and enter the through structure. The through structure also limits the two ends of the connecting plate 122. In some specific embodiments, the two ends of the connecting plate 122 can be detachably mounted in the adjacent through structure. The above-mentioned detachable assembly relationship can be flexibly adapted and adjusted according to the winding direction of the corresponding embedded heating section during the process of detachably assembling each side insulating support on the corresponding arc-shaped plate 121.

[0106] In some embodiments, as shown in FIG15 , a plurality of edge insulating supports 5 are detachably mounted on the same arc-shaped plate 121 , and some of the edge insulating supports 5 are in sequential surface contact along the circumference of the edge substrate 12 to achieve a dense arrangement to facilitate heat collection.

[0107] In some embodiments, as shown in FIG15 , among several side insulating support members 5 detachably mounted on the same arc-shaped plate 121, some of the side insulating support members 5 are sequentially spaced apart along the circumference of the side substrate 12. Specifically, with reference to FIG14 , FIG15 and FIG18 , when the side of the side insulating support member 5 is provided with a side supporting groove 53 as shown in FIG14 , adjacent side insulating support members 5 are spaced apart so that each of the side supporting grooves 53 forms at least a side supporting structure for supporting the side heating section 33. The side heating section 33 is embedded in adjacent side supporting grooves 53 and can provide heat through the spacing between adjacent side supporting grooves 53, thereby facilitating heat collection.

[0108] In some embodiments, a plurality of edge insulating support members 5 detachably mounted on the same arc-shaped plate 121 are in surface contact with each other in sequence along the circumference of the edge substrate 12 to achieve a close arrangement, or are arranged in sequence and at intervals in the circumference of the edge substrate 12 .

[0109] In some embodiments, the groove depth of the edge support groove is d / 4-2d / 3, where d is the average diameter of the edge heating section in contact with the edge support groove, so that the top of the edge heating section in contact with the edge support groove is exposed, which facilitates rapid heat transfer to improve heating efficiency.

[0110] In some embodiments, the groove depth of the side support groove is d / 4-2d / 3, where d is the average diameter of the side heating section in contact with the side support groove, so that the top of the side heating section in contact with the side support groove is exposed, which facilitates rapid heat transfer to improve heating efficiency.

[0111] In this embodiment, the semiconductor device heating apparatus further includes a plurality of edge insulating sleeves, which are disposed below or through the connecting plate. The provision of the edge insulating sleeves on or near the connecting plate 122 prevents the ends of the corresponding edge heating segments from electrically contacting each other and other conductive plates as they extend downward.

[0112] In some embodiments, when the connecting plate 122 is an insulating connecting plate, the side insulating sleeve can be fixed on the bottom surface of the connecting plate 122 to be located below the connecting plate 122, or be provided on a plate below the connecting plate 122 (for example, a heat insulation plate below the connecting plate) to be located below the connecting plate 122. The two ends of each heating section in each first side heating section 31 and each second side heating section 32 near the connecting plate 122 respectively pass through the connecting plate 122 and extend into a corresponding insulating sleeve below. When the side of the side insulating support member 5 is provided with a side support groove 53 as shown in Figure 13, the two ends of each side heating section respectively pass through the nearby connecting plate 122 and extend into a corresponding side insulating sleeve nearby to avoid short circuit between adjacent heating sections.

[0113] In some embodiments, when the connecting plate 122 is a conductive connecting plate, the side insulating sleeve can be fixed to the connecting plate, for example, passing through and fixed to the connecting plate 122. The two ends of each heating segment in each first side heating segment 31 and each second side heating segment 32 near the connecting plate 122 extend into a corresponding nearby side insulating sleeve. When the side insulating support member 5 is provided with a side support through slot 53 as shown in Figure 13, the two ends of each side heating segment extend into a corresponding nearby insulating sleeve to avoid contact between adjacent heating segments and electrical contact with the connecting plate 122. Specifically, referring to Figures 17 and 19, the side insulating sleeve 72 is passed through the mounting hole 1221 provided on the connecting plate 122, so that the two ends of each corresponding side heating segment extend within the corresponding side insulating sleeve 72 and are electrically connected to the electrode pin 131 on the electrode plate 13. It should be noted that in some embodiments, in order to prevent heat from being transferred downward, resulting in heat loss. A heat insulation plate 9 as shown in Figure 19 is arranged between the area where the edge substrate 12 and the middle substrate 11 are located and the electrode plate 13. The heat insulation plate 9 is made of metal material. The edge insulating sleeve 72 extends toward the heat insulation plate 9 and passes through the heat insulation plate 9. One end of the electrode pin 131 arranged on the electrode plate 13 extends into the edge insulating sleeve 72, so as to facilitate the heating section to extend into the edge insulating sleeve 72 and then make electrical contact with the electrode pin 131 in the edge insulating sleeve 72.

[0114] In some embodiments, the electrode plates 13 suspended below the middle substrate 11 are located in the same layer and are at least 2 in number. Each of the electrode plates 13 is connected to the middle substrate 11 by an insulating fixing, and any adjacent electrode plates 13 are spaced apart to be electrically insulated. Compared with only providing one whole electrode plate 13, this arrangement reduces the thermal expansion coefficient of the electrode plate 13 and extends the service life of the electrode plate 13. Specifically, referring to Figures 20 and 21, the electrode plate 13 includes a side electrode plate 132 provided under the side substrate 12, and the side electrode plate 132 includes a first arc-shaped electrode plate 1321 and a second arc-shaped electrode plate 1322. The first arc-shaped electrode plate 1321 and the second arc-shaped electrode plate 1322 are arranged at intervals around the middle electrode plate 133 and are spaced apart from the middle electrode plate 133. The side substrate 12 is fixed relative to the side electrode plate 132 below by an insulating fixing 8. The electrode plates 13 also include a central electrode plate 132 disposed below the central substrate 11. The central electrode plates 132 include a first central electrode plate 1331, a second central electrode plate 1332, and a third central electrode plate 1333, which are spaced apart from each other. The shape, area, and polarity of each central electrode plate 1331 are determined by the winding arrangement of each central heating segment on the central substrate 2. The polarity of each electrode pin connected to the same central electrode plate is the same.

[0115] In some embodiments, each middle electrode plate 133 is relatively fixed to the upper middle substrate 11 via an insulating fixing member.

[0116] In some embodiments, each curved plate 121 in the edge substrate 12 is disposed in one-to-one correspondence with each curved electrode plate below and is relatively fixed by an insulating fixture 8. Furthermore, a heat shield 9 is disposed between the middle substrate 11 and the middle electrode plate 133, and at least a portion of the insulating fixture 8 extends through the heat shield 9.

[0117] In some embodiments, the edge substrate 12 is an insulating substrate. In some specific embodiments, the insulating substrate is a ceramic substrate.

[0118] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A semiconductor device heating device, characterized in that: include: middle base plate; Several middle heating sections; a plurality of middle support groups, wherein each of the middle heating segments is detachably embedded in each of the middle support groups and exposes the top of the middle heating segment, and both ends of each of the middle heating segments extend toward the middle base plate and penetrate the middle base plate, and each of the middle heating segments is electrically insulated from the middle base plate; Each of the central support groups includes a plurality of central insulating support members detachably mounted on the top surface of the central substrate, a central support through-slot being provided on the top of each of the central insulating support members, and in each of the central support groups, the central insulating support members are sequentially arranged along the winding direction of the corresponding embedded central heating segment so that each of the central support through-slots forms a central support structure for embedding the corresponding central heating segment; In each of the middle support groups, the middle parts of adjacent middle insulating support members are in surface contact with each other or have a gap. In the middle heating section, the positive projection of the part located above the middle part of each middle insulating support member toward the middle substrate is a block corresponding to the middle part of the middle insulating support member.

2. The semiconductor device heating device according to claim 1, wherein: At least a portion of the middle insulating support member is detachably connected to the top surface of the middle substrate.

3. The semiconductor device heating device according to claim 1, wherein: In the middle support groups radially adjacent to each other along the middle substrate, the middle parts of the adjacent middle insulating support members belonging to different middle support groups are in surface contact with each other or have gaps therebetween.

4. The semiconductor device heating device according to claim 2, wherein: The middle substrate is provided with at least one limit member, which is close to either end of the middle support group. A rotating member is rotatably provided on the top of the limit member to rotate axially around the limit member. The rotating member is against the middle insulating support member located at one end of the middle support group along the rotation direction and is located between the middle of the middle insulating support member and the middle substrate.

5. The semiconductor device heating device according to claim 1, wherein The central insulating support member includes a central blocking member, the central supporting groove provided on the top of the central blocking member, and a mounting portion provided on the bottom of the central blocking member. The mounting portion is detachably provided on the top surface of the central substrate. The central blocking members of adjacent central insulating support members are in surface contact with each other or have a gap. The positive projection of the part of the central heating section located above the central blocking member of the central insulating support member toward the central substrate is blocked by the corresponding central blocking member.

6. The semiconductor device heating device according to claim 1, wherein: It also includes several central insulating sleeves arranged near the ends of each of the central support groups, and the central insulating sleeves are passed through the central substrate or are arranged below the central substrate, so that the ends corresponding to the central heating sections extend within the central insulating sleeves, or extend within the central insulating sleeves after passing through the central substrate.

7. The semiconductor device heating device according to claim 1, wherein: The middle substrate includes an insulating substrate, and the insulating substrate includes a ceramic substrate.

8. The semiconductor device heating device according to claim 1, wherein Also includes: a side substrate surrounding the middle substrate; A plurality of first edge heating segments and a plurality of second edge heating segments are electrically insulated from the edge substrate; A plurality of side insulating support groups are spaced around the middle base plate and detachably mounted on the side base plate, wherein the height of the side insulating support groups is not less than that of the middle support group; A first side support structure extending along the winding direction of the corresponding first side heating segment is provided on the top of each side insulating support group, and each first side support structure is arranged at intervals around the middle substrate and is embedded with the first side heating segment in a one-to-one correspondence; A second side support structure is further provided on the top of each side insulation support group, extending along the winding direction of the corresponding second side heating segment. Each second side support structure is arranged at intervals around the middle substrate and is embedded with the second side heating segment in a one-to-one correspondence. The top of each of the first side heating segments and each of the second side heating segments is exposed, and both ends extend toward the side substrate and penetrate the side substrate; The distance between adjacent first side support structures and second side support structures is smaller than the distance between adjacent middle support groups along the middle substrate.

9. The semiconductor device heating device according to claim 8, wherein: The side substrate includes at least two arc-shaped plates arranged at intervals around the middle substrate and a connecting plate arranged above the adjacent arc-shaped plates. The several side insulation support groups are detachably clamped on each of the arc-shaped plates in sequence around the middle substrate. The two ends of the connecting plate extend into the adjacent side insulation support groups respectively. The two ends of each first side heating segment and each second side heating segment extend toward the nearby connecting plate and pass through the connecting plate. Each first side heating segment and each second side heating segment are electrically insulated from the connecting plate.

10. The semiconductor device heating device according to claim 9, wherein: It also includes a plurality of side insulating sleeves passing through the connecting plate or arranged below the connecting plate; Both ends of each of the first side heating sections and each of the second side heating sections near the connecting plate respectively pass through the connecting plate and extend into the corresponding insulating sleeve below, or extend into the insulating sleeve passing through the connecting plate.

11. The semiconductor device heating device according to claim 9, wherein It also includes at least one side heating section electrically insulated from the side substrate, and the outer wall of each side insulation support group is provided with at least one side support structure extending along the winding direction of the side heating section. The at least one side heating section is correspondingly embedded in each side support structure with the side exposed, and both ends of the side heating section extend toward the side substrate and pass through the side substrate. When the number of the side support structures is at least 2, each side support structure is arranged along the axial direction of the corresponding side insulation support group.

12. The semiconductor device heating device according to claim 9, wherein Each of the edge insulation support groups includes a plurality of edge insulation support members that can be detachably arranged along the extension direction of each of the arc-shaped plates, a first edge support through-groove and a second edge support through-groove located outside the first edge support through-groove are arranged on the top of each of the edge insulation support members, and each of the edge insulation support members of each of the insulation support groups can be detachably arranged on the edge substrate along the circumference of the edge substrate, and each of the first edge support through-grooves forms the first edge support structure, and each of the second edge support through-grooves forms the second edge support structure.

13. The semiconductor device heating device according to claim 11, wherein Each of the edge insulation support groups includes a number of edge insulation support members that can be detachably arranged along the extension direction of each of the arc-shaped plates. The outer side wall of each of the edge insulation support members is provided with at least one side support groove, and each of the side support grooves forms the at least one side support structure.

14. The semiconductor device heating device according to claim 11, wherein It also includes several side insulating sleeves that are passed through the connecting plate or located below the connecting plate. The two ends of each side heating section respectively pass through the nearby connecting plate and extend into the corresponding side insulating sleeve below, or extend into the insulating sleeve that is passed through the nearby connecting plate.

15. The semiconductor device heating device according to claim 12, wherein: A bottom through groove is provided at the bottom of each edge insulation support member of each edge insulation support group, and the arc-shaped plates are sequentially passed through each bottom through groove and are detachably mounted on the middle of the side wall of the corresponding bottom through groove together with each edge insulation support member. The arc-shaped plates and each bottom through groove form a through structure with openings on both sides, and the two ends of the connecting plate extend into adjacent through structures respectively, or are detachably mounted in adjacent through structures.

16. The semiconductor device heating device according to claim 12, wherein: In the portion of the side insulating support members on which each arc-shaped plate is detachably mounted, there is a distance between at least one group of adjacent side insulating support members.

17. The semiconductor device heating device according to claim 8, wherein The edge substrate includes an insulating substrate, and the insulating substrate includes a ceramic substrate.

18. The semiconductor device heating device according to claim 1, wherein It also includes at least two electrode plates suspended below the middle substrate and located on the same layer. Each electrode plate is connected to the middle substrate via an insulating fixing member. Any adjacent electrode plates are spaced apart to provide electrical insulation.

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