Substrate processing device, gas supply suppression structure, substrate processing method, and semiconductor device manufacturing method

Abstract

This substrate processing device includes: a processing chamber for processing a substrate; a substrate support part provided in the processing chamber and capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; a gas supply part that is provided at a position facing the substrate support part, has an annular first region having an inner diameter larger than an outer diameter of the second substrate, and a second region provided on an inner peripheral side of the first region, and is capable of supplying gas into the processing chamber from the first region and the second region; and a suppression part configured to suppress the supply of gas from the first region into the processing chamber when processing the second substrate.

Description

Substrate processing apparatus, gas supply suppression structure, substrate processing method, and semiconductor device manufacturing method

[0001] The present disclosure relates to a substrate processing apparatus, a gas supply suppression structure, a substrate processing method, and a method for manufacturing a semiconductor device.

[0002] 2. Description of the Related Art As one step in the manufacturing process of a semiconductor device, a technique is known in which a process gas is supplied to a substrate to form a film on the substrate (see, for example, Patent Documents 1 and 2).

[0003] JP 2018-133477 A JP 2018-93045 A

[0004] The present disclosure provides a technique that allows stable processing of substrates regardless of their size.

[0005] According to one aspect of the present disclosure, there is provided a technology comprising: a processing chamber for processing a substrate; a substrate support portion provided in the processing chamber and capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; a gas supply portion provided opposite the substrate support portion and having an annular first region having an inner diameter larger than the outer diameter of the second substrate and a second region provided on the inner periphery of the first region, the gas supply portion being capable of supplying gas from the first region and the second region into the processing chamber; and a suppression portion configured to suppress supply of gas from the first region into the processing chamber when processing the second substrate.

[0006] According to the present disclosure, substrates can be processed stably regardless of their size.

[0007] FIG. 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present disclosure, showing a state in which a first substrate is set. FIG. 2 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present disclosure, showing a state in which a second substrate is set. FIG. 2 is a diagram showing a gas supply system of the substrate processing apparatus according to an embodiment of the present disclosure. FIG. 4 is a plan view of the substrate processing apparatus of FIG. 1, as viewed from the direction of arrow 4X. FIG. 5 is a plan view of the substrate processing apparatus of FIG. 2, as viewed from the direction of arrow 5X. FIG. 6 is a block diagram of a control system used in the substrate processing apparatus according to an embodiment of the present disclosure. FIG. 7 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present disclosure, showing a state in which a first substrate is set. FIG. 8 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present disclosure, showing a state in which a second substrate is set. FIG. 9 is a schematic diagram of a suppression member storage unit used in the substrate processing apparatus according to another embodiment of the present disclosure.

[0008] <One Aspect of the Present Disclosure> One aspect of the present disclosure will be described below, mainly with reference to Figures 1 to 6. Note that all drawings used in the following description are schematic, and the dimensional relationships between elements in the drawings, the ratios of elements, etc. do not necessarily match those in reality. Furthermore, the dimensional relationships between elements, the ratios of elements, etc. do not necessarily match between multiple drawings.

[0009] (1) Configuration of the Substrate Processing Apparatus As shown in FIG. 1, the substrate processing apparatus 200 is an apparatus capable of processing a substrate S. In the figure, the upward direction of the substrate processing apparatus 200 is indicated by an arrow UP. The substrate processing apparatus 200 includes a processing vessel 202. The processing vessel 202 is configured as, for example, a flat, sealed vessel having a circular cross section. The processing vessel 202 is also configured from a metal material such as aluminum (Al) or stainless steel (SUS).

[0010] (Processing Chamber) A processing chamber 205 for processing a substrate S such as a silicon wafer is formed within the processing vessel 202 .

[0011] The processing vessel 202 includes an upper processing vessel 202a and a lower processing vessel 202b.

[0012] A substrate loading / unloading port 204 is provided on the side surface of the lower processing vessel 202b adjacent to the gate valve 203. The substrate S is moved between the lower processing vessel 202b and a transfer chamber (not shown) through the substrate loading / unloading port 204 by a transfer mechanism (not shown).

[0013] A plurality of lift pins 206 are provided at the bottom of the lower processing vessel 202b. These lift pins 206 extend upward.

[0014] (Substrate Supporting Part) A substrate supporting part 210 that supports a substrate S is disposed in the processing chamber 205. The substrate supporting part 210 is configured to be able to support a first substrate S1 or a second substrate S2 having an outer diameter smaller than that of the first substrate S1, among the substrates S. In the present embodiment, as an example, the first substrate S1 is a substrate having a diameter of 300 mm, and the second substrate S2 is a substrate having a diameter of 200 mm.

[0015] The substrate support portion 210 mainly includes a substrate mounting surface 211 on which the substrate S is placed, a substrate mounting table 212 having the substrate mounting surface 211 on its surface, a heater 213 as a heat source provided within the substrate mounting table 212, and a bias electrode 215 as an electrode provided within the substrate mounting table 212.

[0016] The substrate mounting surface 211 has a diameter larger than that of the first substrate S1. On the substrate mounting surface 211, one first substrate S1 or one second substrate S2 can be mounted.

[0017] The substrate mounting table 212 has through holes 214 through which the lift pins 206 pass, formed at positions corresponding to the lift pins 206 .

[0018] The heater 213 is connected via an electric wire to a heater control unit 255. The heater control unit 255 heats the heater 213 to a desired temperature in accordance with instructions from a controller 280.

[0019] The bias electrode 215 is disposed below the heater 213. The bias electrode 215 is connected to the earth 251 via an electric wiring.

[0020] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 penetrates the bottom of the processing vessel 202. The shaft 217 is connected to an elevator 218 outside the processing vessel 202. The shaft 217 is insulated from the processing vessel 202.

[0021] When the lifting unit 218 is operated, the shaft 217 and the substrate mounting table 212 are raised and lowered. That is, by operating the lifting unit 218, the substrate S placed on the substrate mounting surface 211 can be raised and lowered.

[0022] The lower end of the shaft 217 is covered with a bellows 219. The bellows 219 keeps the inside of the processing chamber 205 airtight.

[0023] When transporting the substrate S, the substrate mounting table 212 is lowered to a position where the substrate mounting surface 211 faces the substrate loading / unloading port 204. When processing the substrate S, the substrate mounting table 212 is raised to the processing position shown in FIG.

[0024] The substrate support section 210 is also provided with a countersunk section 220 capable of accommodating the suppression section 300, which will be described later. The shape of this countersunk section 220 corresponds to the shape of the suppression section 300. For example, it may be formed in a circumferential shape, and the bottom surface may support the suppression section 300. Therefore, the suppression section 300 can be accommodated in the countersunk section 220.

[0025] An exhaust pipe 262 is connected to the processing vessel 202 so as to communicate with the processing chamber 205. Specifically, the exhaust pipe 262 is connected to the lower processing vessel 202b.

[0026] The exhaust pipe 262 is provided with an APC (Auto Pressure Controller) 266, which is a pressure regulator that adjusts the pressure inside the process chamber 205 to a predetermined level. The APC 266 has a valve element (not shown) with an adjustable opening, and adjusts the conductance of the exhaust pipe 262 in response to instructions from a controller 280. A valve 267 is provided in the exhaust pipe 262 upstream of the APC 266. A dry pump 269 is provided in the exhaust pipe 262 downstream of the APC 266. The dry pump 269 exhausts the atmosphere in the process chamber 205 through the exhaust pipe 262. An exhaust system is mainly composed of the exhaust pipe 262, the valve 267, and the APC 266. The dry pump 269 may be considered to be included in the exhaust system.

[0027] (Gas Supply Unit) As shown in FIG. 1, the upper processing vessel 202a is provided with a shower head 230 as a gas supply unit.

[0028] A through-hole 231a is provided in the lid 231 of the shower head 230. An insulator 231c is provided on the inner periphery of the through-hole 231a. A gas introduction hole 231b is provided in the insulator 231c. The gas introduction hole 231b is connected to a common gas supply pipe 242, which will be described later. The insulator 231c electrically insulates the common gas supply pipe 242 from the lid 231.

[0029] A power supply line 252a is connected to the lid 231. A high-frequency power supply 252b and a matching box 252c are provided on the power supply line 252a, in this order from upstream to downstream. The high-frequency power supply 252b is connected to a ground 252d. The power supply line 252a and the matching box 252c mainly constitute a power supply system 252. The high-frequency power supply 252b may be included in the power supply system 252.

[0030] The shower head 230 includes a dispersion plate 234 as a dispersion mechanism for dispersing gas. The upstream side of the dispersion plate 234 is the buffer space 232, and the downstream side is the processing chamber 205.

[0031] The dispersion plate 234 is disposed so as to face the substrate support portion 210. Specifically, the dispersion plate 234 is disposed so as to face the substrate placement surface 211 in the vertical direction. The dispersion plate 234 is formed, for example, in a disk shape.

[0032] The dispersion plate 234 is provided with a plurality of through-holes 234a as passages through which gas can pass. The plurality of through-holes 234a are provided over the entire surface of the dispersion plate 234, as shown in FIGS.

[0033] The dispersion plate 234 has an annular first region R1 having an inner diameter larger than the outer diameter of the second substrate S2, and a second region R2 provided on the inner circumferential side of the first region. Gas is supplied into the processing chamber 205 from a plurality of through holes 234a included in the first region R1 of the dispersion plate 234 and a plurality of through holes 234a included in the second region R2.

[0034] The first region R1 of the dispersion plate 234 is a region that faces the surface of the first substrate S1 when the first substrate S1 is supported by the substrate support part 210, and that does not face the surface of the second substrate S2 when the second substrate S2 is supported by the substrate support part 210. The first region R1 is a region that faces the edge part E1 of the first substrate S1 when the first substrate S1 is supported by the substrate support part 210, and that does not face the second substrate S2 when the second substrate S2 is supported by the substrate support part 210. The first region R1 is a region that is formed by the portion of the dispersion plate 234 on the edge part side.

[0035] The second region R2 of the dispersion plate 234 is a region that faces the surface of the first substrate S1 when the first substrate S1 is supported by the substrate support part 210, and faces the surface of the second substrate S2 when the second substrate S2 is supported by the substrate support part 210. The second region R2 is a region that faces the center (center in the radial direction) of the first substrate S1 when the first substrate S1 is supported by the substrate support part 210, and faces the second substrate S2 when the second substrate S2 is supported by the substrate support part 210. In other words, the second region R2 of the dispersion plate 234 is a region that is formed by a portion of the dispersion plate 234 that is closer to the inner periphery than the edge part.

[0036] The upper processing vessel 202a has a flange, and an insulating support block 233 is placed and fixed on the flange.

[0037] The support block 233 has a flange, and a dispersion plate 234 is placed and fixed on the flange. The lid 231 is fixed to the upper surface of the support block 233. The support block 233 insulates the lid 231 from the upper processing vessel 202a.

[0038] A common gas supply pipe 242 is connected to the cover 231 so as to communicate with the gas introduction hole 231b. As shown in Fig. 3, a first gas supply pipe 243a, a second gas supply pipe 244a, and a third gas supply pipe 245a are connected to the common gas supply pipe 242.

[0039] The first gas supply pipe 243a is provided with, in order from upstream, a first gas source 243b, a mass flow controller (MFC) 243c which is a flow rate controller (flow rate control section), and a valve 243d which is an on-off valve. The first gas source 243b is a first gas source containing a first element. The first gas is one of the process gases.

[0040] The first gas supply pipe 243a, the MFC 243c, and the valve 243d mainly constitute the first gas supply system 243. The first gas supply system 243 may also include a first gas source 243b.

[0041] The second gas supply pipe 244a is provided with, in order from upstream, a second gas source 244b, an MFC 244c, and a valve 244d, which is an on-off valve. The second gas source 244b is a second gas source containing a second element. The second gas is one of the process gases. The second element gas may also be considered as a reaction gas.

[0042] The second gas supply pipe 244a, the MFC 244c, and the valve 244d mainly constitute a second gas supply system 244. The second gas supply system 244 may also include a second gas source 244b.

[0043] The third gas supply pipe 245a is provided with, in order from upstream, a third gas source 245b, an MFC 245c, and a valve 245d, which is an on-off valve. The third gas source 245b is an inert gas source. The inert gas acts as a purge gas that purges gas remaining in the processing vessel 202 and the shower head 230 during the substrate processing process.

[0044] The third gas supply pipe 245a, the MFC 245c, and the valve 245d mainly constitute a third gas supply system 245. The third gas supply system 245 may also include a third gas source 245b.

[0045] In this embodiment, any one of the first gas supply system 243, the second gas supply system 244, and the third gas supply system 245, or a combination thereof, is collectively referred to as a gas supply system. Note that, although the configuration in which the common gas supply pipe 242 is connected to the gas supply systems has been described here, the present invention is not limited to this, and each gas supply system may be configured to individually supply gas into the processing chamber 205.

[0046] (Suppression Unit) As shown in FIGS. 1 and 2 , a suppression unit 300 is disposed in the processing chamber 205. The suppression unit 300 is configured to suppress the supply (inflow) of gas from the first region R1 into the processing chamber 205 when processing the second substrate S2. Specifically, the suppression unit 300 is disposed opposite the substrate support unit 210. The suppression unit 300 has a first portion 300a that suppresses the supply of gas from the first region R1 into the processing chamber 205, and a second portion 300b as a hole through which gas can pass. Here, as shown in FIGS. 1 and 2 , the diameter of the second portion 300b is larger than the outer diameter of the second substrate S2 and smaller than the outer diameter of the first substrate S1. The shape of the second portion 300b is the same as the outer shape of the second substrate S2. In this embodiment, as an example, the shape of the first portion 300a is circular, and the shape of the second portion 300b is also circular. That is, the suppression unit 300 can be rephrased as a disk-shaped member with a through-hole formed in the center.

[0047] 2 , when the second substrate S2 is supported on the substrate support part 210, the first portion 300a of the suppression part 300 is disposed above the surface of the substrate support part 210 that is not supporting the second substrate S2. Specifically, the first portion 300a of the suppression part 300 is disposed above the countersunk portion 220.

[0048] Furthermore, when processing the second substrate S2, the suppression unit 300 is disposed between the bias electrode 215 and the shower head 230. Specifically, the suppression unit 300 is disposed between a portion of the bias electrode 215 facing the first region R1 and a portion of the dispersion plate 234 in the first region R1.

[0049] Furthermore, when the suppression unit 300 processes the second substrate S2, the first portion 300a is disposed below at least the first region R1.

[0050] Furthermore, the suppression unit 300 is accommodated in the countersunk portion 220 when processing the first substrate S1. Specifically, when the suppression unit 300 is accommodated in the countersunk portion 220, the surface of the suppression unit 300 forms part of the substrate mounting surface 211. More specifically, the surface of the suppression unit 300 forms the outer peripheral portion of the substrate mounting surface 211. In other words, when the first substrate S1 is supported by the substrate support unit 210, a portion of the first substrate S1 is placed on the surface of the suppression unit 300.

[0051] The substrate processing apparatus 200 further includes a lifting unit 310 as a position control unit that can control the positional relationship between the shower head 230 and the suppression unit 300 .

[0052] As shown in FIG. 1 , the lifting unit 310 controls the distance between the suppression unit 300 and the shower head 230 to be a first distance when processing a first substrate S1. Furthermore, the lifting unit 310 is configured to control the distance between the suppression unit 300 and the shower head 230 to be closer than the first distance when processing a second substrate S2. Specifically, the lifting unit 310 is controlled by the controller 280. When the substrate S is the first substrate S1, the controller 280 sets the distance between the suppression unit 300 and the shower head 230 to a first distance, and when the substrate S is the second substrate S2, the controller 280 sets the distance between the suppression unit 300 and the shower head 230 to a second distance that is shorter than the first distance. Note that this second distance may be zero, or may be a distance that forms a slight gap between the suppression unit 300 and the shower head 230.

[0053] The back surface (lower surface) of the first portion 300a is provided with a plurality of recesses 302 that can engage with the tip ends of support pins 320 (described later). The recesses 302 are provided at intervals in the circumferential direction of the suppression portion 300.

[0054] The suppression unit 300 has insulating properties. Specifically, the suppression unit 300 is made of an insulating material. Examples of insulating materials include silicon-based materials such as SiO and ceramics.

[0055] The substrate processing apparatus 200 further includes support pins 320 capable of supporting the suppression unit 300. Tips of the support pins 320 engage with the recesses 302 of the suppression unit 300. A plurality of support pins 320 are provided at positions on the bottom of the lower processing vessel 202b corresponding to the recesses 302 of the suppression unit 300.

[0056] The plurality of support pins 320 also pass through through holes 221 formed in the substrate support portion 210. The plurality of support pins 320 are attached to a support plate 322. A through hole is formed in the center of the support plate 322. A bellows 219 passes through this through hole.

[0057] The lifting unit 310 controls the distance between the suppression unit 300 and the shower head 230 via support pins 320 attached to a support plate 322 .

[0058] The substrate processing apparatus 200 has a controller 280 that controls the operation of each part of the substrate processing apparatus 200. As shown in Fig. 6, the controller 280 is configured as a computer including at least a CPU (Central Processing Unit) 280a, a RAM (Random Access Memory) 280b, a storage unit 280c, and an I / O port 280d.

[0059] The RAM 280b, the storage unit 280c, and the I / O port 280d are configured to be able to exchange data with the CPU 280a via an internal bus 280e. An input / output device 281 configured as, for example, a touch panel is connected to the controller 280.

[0060] The storage unit 280c is configured with, for example, a flash memory, a hard disk drive (HDD), a solid state drive (SSD), etc. Control programs for controlling the operation of the substrate processing apparatus, process recipes describing procedures and conditions for substrate processing (described later), etc., are readably stored in the storage unit 280c. A process recipe is a combination of procedures for substrate processing (described later) that are executed by the controller 280 to obtain a predetermined result, and functions as a program. Hereinafter, process recipes, control programs, etc. are collectively referred to simply as programs. A process recipe is also simply referred to as a recipe. In this specification, the term "program" may refer to a recipe alone, a control program alone, or both. The RAM 280b is configured as a memory area (work area) in which programs, data, etc. read by the CPU 280a are temporarily stored.

[0061] The I / O port 280d is connected to the gate valve 203, the MFCs 243c, 244c, and 245c, the valves 243d, 244d, and 245d, the APC valve 266, the dry pump 269, the heater 213, the elevator 218, and the elevator 310.

[0062] The CPU 280a is configured to read and execute a control program from the storage unit 280c, and to read a recipe from the storage unit 280c in response to an input of an operation command from the input / output device 281. The CPU 280a is configured to be able to control, in accordance with the contents of the read recipe, the flow rate adjustment operation of various gases by the MFCs 243c, 244c, and 245c, the opening and closing operation of the valves 243d, 244d, and 245d, the opening and closing operation of the APC valve 266, the start and stop of the dry pump 269, the temperature adjustment operation of the heater 213, the lifting and lowering operation of the substrate support unit 210 by the lifting and lowering unit 218, and the lifting and lowering operation of the suppression unit 300 by the lifting and lowering unit 310.

[0063] The controller 280 can be configured by installing the above-mentioned program stored in the external storage device 282 into a computer. The external storage device 282 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or an SSD. The storage unit 280c and the external storage device 282 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as recording media. When the term recording medium is used in this specification, it may include only the storage unit 280c alone, only the external storage device 282 alone, or both. Note that the program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 282.

[0064] (2) Substrate Processing Process Next, a substrate processing process according to an embodiment of the present disclosure will be described. The substrate processing process according to this embodiment is performed by the substrate processing apparatus 200 described above as one step in the manufacturing process of semiconductor devices such as flash memories. In the following description, the operation of each component of the substrate processing apparatus 200 is controlled by a controller 280. Note that, since the processing of the substrate S and the first substrate S1 is the same, the processing of the substrate S will be described below as a representative example.

[0065] (Substrate Loading Process) First, the lifting unit 218 lowers the substrate support unit 210 to a transfer position for the substrate S, and the lift pins 206 pass through the through holes 214 of the substrate support unit 210. Next, the gate valve 203 is opened, and the substrate S is loaded into the processing chamber 205 from the transfer chamber adjacent to the processing chamber 205 using the transfer mechanism. The loaded substrate S is supported in a horizontal position on the lift pins 206 protruding from the substrate mounting surface 211 of the substrate support unit 210. Then, the lifting unit 218 raises the substrate support unit 210, so that the substrate S is supported on the substrate mounting surface 211 of the substrate support unit 210.

[0066] When the substrate S to be processed is the second substrate S2, as shown in FIG. 2, the lifting unit 310 is operated to move the suppression unit 300 upward to block the through-holes 234a in the second region R2 of the dispersion plate 234.

[0067] (Heating and Vacuum Exhaust Process) Subsequently, the temperature of the substrate S loaded into the processing chamber 205 is raised. Here, by energizing the heater 213, the temperature of the substrate S held on the substrate support member 210 is raised by the heat of the heater 213. Furthermore, while the temperature of the substrate S is being raised, the processing chamber 205 is evacuated to a vacuum via the exhaust pipe 262 by the dry pump 269, and the pressure inside the processing chamber 205 is set to a predetermined value. The dry pump 269 is kept operating at least until the substrate unloading process, which will be described later, is completed.

[0068] (Processing Gas Supply Process) Next, the supply of the processing gas is started. Specifically, the valves 243d and 244d are opened, and the supply of the first gas and the second gas into the processing chamber 205 is started while controlling the flow rates with the MFCs 243c and 244c.

[0069] Furthermore, the opening of the APC valve 266 is adjusted to control exhaustion from the processing chamber 205 so that the pressure inside the processing chamber 205 becomes a predetermined value. In this way, while the processing chamber 205 is appropriately exhausted, the supply of the first gas and the second gas continues until the end of the plasma processing step described below.

[0070] (Plasma Processing Step) Once the pressure inside the processing chamber 205 has stabilized, the power supply system 252 starts supplying high frequency power into the processing chamber 205. Specifically, the high frequency power supply 252b is activated to supply power. A portion of the processing gas inside the processing chamber 205 is ionized and turned into a plasma state.

[0071] The surface layer of the substrate S placed on the substrate placement surface 211 of the substrate support portion 210 is modified by the plasma.

[0072] After that, when a predetermined processing time has elapsed, the power output from the high frequency power supply 252b is stopped to stop the plasma discharge in the processing chamber 205. Furthermore, the valves 243d and 244d are closed to stop the supply of the first gas and the second gas into the processing chamber 205. This completes the plasma processing step.

[0073] (Vacuum Exhaust Process) After the supply of the first gas and the second gas is stopped, the processing chamber 205 is evacuated via the exhaust pipe 262. As a result, the first gas, the second gas, and exhaust gas generated by the reaction of these gases in the processing chamber 205 are exhausted to the outside of the processing chamber 205. Thereafter, the aperture of the APC valve 266 is adjusted to adjust the pressure in the processing chamber 205 to the same pressure as that of the transfer chamber adjacent to the processing chamber 205. Note that the transfer chamber is the destination to which the substrate S is transferred.

[0074] (Substrate Unloading Process) When the pressure inside the processing chamber 205 reaches a predetermined level, the substrate support part 210 is lowered to a transfer position for the substrate S, and the substrate S is supported on the lift pins 206. Then, the gate valve 203 is opened, and the substrate S is unloaded from the processing chamber 205 using the transfer mechanism.

[0075] Furthermore, if the processed substrate S is the second substrate S2, the lifting unit 310 is operated to move the suppression unit 300 downward, and the suppression unit 300 is accommodated in the counterbore 220 of the substrate support unit 210. Thereafter, the substrate support unit 210 is lowered to the transfer position for the substrate S, the second substrate S2 is supported on the lift pins 206, the gate valve 203 is opened, and the second substrate S2 is transferred out of the processing chamber 205 using the transfer mechanism.

[0076] This completes the substrate processing process according to this embodiment.

[0077] According to this embodiment, one or more of the following effects are achieved.

[0078] In this embodiment, when processing a first substrate S1, gas is supplied into the processing chamber 205 from the first region R1 and the second region R2 of the shower head 230. Furthermore, in this embodiment, when processing a second substrate S2 having a smaller outer diameter than the first substrate S1, the suppression unit 300 suppresses the supply of gas from the first region R1 of the shower head 230 into the processing chamber 205, and gas is supplied from the second region R2 to the processing chamber 205. This reduces the amount of gas adhering to the surface of the substrate support part 210 facing the first region R1. Specifically, the amount of gas adhering to the surface of the substrate support part 210 outside the second substrate S2 on which the second substrate S2 is not placed can be reduced. In other words, the amount of gas adhering to the surface of the substrate support part 210 facing the edge of the dispersion plate 234 can be reduced. Furthermore, when processing the second substrate S2, the suppression unit suppresses the supply of gas from the first region R1 of the shower head 230 that does not face the second substrate S2, thereby improving gas usage efficiency.

[0079] In this embodiment, since the shape of the second portion 300b of the suppression section 300 is the same as the outer shape of the second substrate S2, when processing the second substrate S2, the supply of gas to the edge portion E2 of the second substrate S2 can be made more uniform.

[0080] In this embodiment, since the power supply system 252 is connected to the shower head 230, the shower head 230 functions as an electrode, and plasma is generated in the processing chamber 205 to which gas is supplied by the power supplied to the shower head 230. The generated plasma is then attracted to the substrate support 210 by the bias electrode 215. Here, in this embodiment, the supply of gas from the first region R1 of the shower head 230 into the processing chamber 205 is suppressed by the suppression unit 300, so that plasma generation between the first region R1 in the processing chamber 205 and the substrate support 210 can be suppressed. Furthermore, in this embodiment, the supply of gas from the first region R1 of the shower head 230 into the processing chamber 205 is suppressed by the suppression unit 300, so that plasma generation between the first region R1 in the processing chamber 205 and a portion of the bias electrode 215 facing the first region R1 can be suppressed.

[0081] In this embodiment, since the suppression unit 300 has insulating properties, even if the suppression unit 300 comes into electrical contact with the shower head 230 to which the power supply system 252 is connected, unexpected discharge between the first region R1 of the shower head 230 and the bias electrode 215 can be suppressed.

[0082] In this embodiment, the elevating unit 310 controls the distance between the suppression unit 300 and the shower head 230. Here, in this embodiment, when the second substrate S2 is processed, the distance between the suppression unit 300 and the shower head 230 becomes shorter than the first distance, and therefore the supply of gas from the first region R1 of the shower head 230 into the processing chamber 205 is suppressed by the suppression unit 300, and the amount of gas adhering to the surface of the substrate support unit 210 on which the second substrate S2 is not placed can be further reduced.

[0083] In this embodiment, the suppression unit 300 is supported by the support pins 320, and therefore does not affect the flow of gas within the processing chamber 205, as compared to, for example, a case in which the suppression unit 300 is supported by columnar support members that have a larger volume than the support pins. Therefore, in this embodiment, it is possible to prevent the processing of the second substrate S2 from becoming uneven.

[0084] In this embodiment, by providing the recess 302 that can engage with the support pin 320 in the first portion 300a of the suppressing portion 300, it is possible to hold the suppressing portion 300 in a fixed position with good reproducibility.

[0085] In this embodiment, when the first substrate S1 is processed, the suppression unit 300 is housed in the counterbore 220, and therefore the suppression unit 300 does not affect the gas flow within the processing chamber 205, as compared to when the suppression unit 300 protrudes from the substrate support unit 210. Therefore, the substrate processing apparatus can prevent uneven processing of the first substrate S1.

[0086] As described above, according to the technology of this embodiment, substrates can be processed stably regardless of their sizes.

[0087] Other Embodiments In the above-described embodiment, the substrate support portion 210 is provided with a counterbore portion 220, and the suppression portion 300 is accommodated in the counterbore portion 220. However, the present disclosure is not limited to this configuration. For example, as shown in FIGS. 7 and 8 , the substrate support portion 210 may not be provided with a counterbore portion 220, and a first ring cover 330 or a second ring cover 340 may be disposed on the substrate mounting surface 211. Specifically, when processing the first substrate S1, the first ring cover 330 is disposed on the substrate mounting surface 211, and when processing the second substrate S2, the second ring cover 340 is disposed on the substrate mounting surface 211. Here, with the substrate support portion 210 supporting the first substrate S1, the first substrate S1 is disposed on the inner periphery of the first ring cover 330. In other words, the first ring cover 330 is disposed on the outer periphery of the first substrate S1 supported by the substrate support portion 210. Furthermore, with the substrate support part 210 supporting the second substrate S2, the second substrate S2 is disposed on the inner periphery side of the second ring cover 340. In other words, the second ring cover 340 is disposed on the outer periphery side of the second substrate S2 supported by the substrate support part 210. In this way, when processing the first substrate S1, the first substrate S1 is disposed on the inner periphery side of the first ring cover 330 with the first substrate S1 supported by the substrate support part 210, thereby reducing the amount of gas adhering to the surface of the substrate support part 210 on which the first substrate S1 is not placed. Furthermore, with the substrate support part 210 supporting the second substrate S2, the second substrate S2 is disposed on the inner periphery side of the second ring cover 340 with the second substrate S2 supported by the substrate support part 210, thereby reducing the amount of gas adhering to the surface of the substrate support part 210 on which the second substrate S2 is not placed. In addition, if the substrate support portion 210 does not have a countersink portion 220, the first substrate S1 can be placed on the substrate placement surface 211 by removing the suppression portion 300 from the support pin 320 before processing the first substrate S1.

[0088] When the substrate support unit 210 does not have the counterbore 220 as in the present embodiment, a storage unit 350 capable of storing the suppression unit 300 may be provided outside the processing chamber 201. FIG. 9 shows the storage unit 350. The storage unit 350 includes an entrance 352 for the suppression unit 300 and support pins 354 that support the suppression unit 300. The support pins 354 have the same diameter as the support pins 320, and their tips fit into the recesses 302 of the suppression unit 300 to support the suppression unit 300. The suppression unit 300 is transported between the processing chamber 205 and the storage unit 350 by the transport mechanism. When the first substrate S1 is processed, the suppression unit 300 is stored in the storage unit 350, and when the second substrate S2 is processed, the suppression unit 300 is moved from the storage unit 350 onto the support pins 320. When processing the first substrate S1 in this manner, the suppression unit 300 is stored in the storage unit 350 outside the processing chamber 205, and therefore the suppression unit 300 is not exposed to gas during processing of the first substrate S1. This reduces the frequency of maintenance of the suppression unit 300.

[0089] In the above-described embodiment, an example has been described in which a substrate surface is treated using plasma. This treatment may be an oxidation treatment or a nitriding treatment. Furthermore, the present invention is not limited to nitriding and oxidation treatments, and may be applied to any technique for treating a substrate using plasma. For example, the present invention may be applied to a modification treatment of a film formed on a substrate surface using plasma, a doping treatment, a reduction treatment of an oxide film, an etching treatment of the film, and an ashing treatment of a resist.

[0090] Although one embodiment of the present disclosure has been specifically described above, the present disclosure is not limited to the above embodiment and can be modified in various ways without departing from the spirit and scope of the present disclosure.

[0091] 205 Processing chamber 210 Substrate support section S Substrate S1 First substrate S2 Second substrate R1 First region R2 Second region 230 Gas supply section (an example of a shower head) 300 Suppression section

Claims

1. A substrate processing apparatus comprising: a processing chamber for processing a substrate; a substrate support section provided in the processing chamber and capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; a gas supply section provided opposite the substrate support section and having an annular first region having an inner diameter larger than the outer diameter of the second substrate and a second region provided on the inner periphery of the first region, the gas supply section being capable of supplying gas from the first region and the second region into the processing chamber; and a suppression section configured to suppress supply of gas from the first region into the processing chamber when processing the second substrate.

2. The substrate processing apparatus according to claim 1, wherein the first region is a region that faces the surface of the first substrate when the first substrate is supported on the substrate support section, and that does not face the surface of the second substrate when the second substrate is supported on the substrate support section; and the second region is a region that faces the surface of the first substrate when the first substrate is supported on the substrate support section, and that faces the surface of the second substrate when the second substrate is supported on the substrate support section.

3. A substrate processing apparatus according to claim 1 or claim 2, wherein the gas supply unit has a plurality of passages through which gas can pass and is provided with a distribution plate facing the substrate support unit, the first region being formed by a portion of the distribution plate on the edge side, and the second region being formed by a portion of the distribution plate that is more inward than the edge side.

4. The substrate processing apparatus according to claim 1, wherein the suppression section is provided at a position opposite the substrate support section and has a first section that suppresses the supply of gas from the first region into the processing chamber and a second section that is a hole through which gas can pass, and the diameter of the second section is larger than the outer diameter of the second substrate and smaller than the outer diameter of the first substrate.

5. The substrate processing apparatus according to claim 4, wherein the first region is a region that faces an edge portion of the first substrate when the first substrate is supported on the substrate support portion, and does not face the second substrate when the second substrate is supported on the substrate support portion; the second region is a region that faces a center portion of the first substrate when the first substrate is supported on the substrate support portion, and faces the second substrate when the second substrate is supported on the substrate support portion; and when processing the second substrate, the first portion is positioned at least below the first region.

6. The substrate processing apparatus according to claim 4, wherein the gas supply section has a plurality of passages through which gas can pass and comprises a distribution plate facing the substrate support section, the first region being formed by a portion on the edge side of the distribution plate, the second region being formed by a portion on the inner periphery side of the edge side, and when processing the second substrate, the first portion is positioned at least below the first region.

7. The substrate processing apparatus according to claim 1, wherein the suppression section is provided at a position opposite the substrate support section and has a first section that suppresses the supply of gas from the first region into the processing chamber, and a second section that is a hole through which gas can pass, and the shape of the second section is the same as the outer shape of the second substrate.

8. The substrate processing apparatus according to claim 1, wherein the suppression section is provided at a position opposite the substrate support section and has a first section that suppresses the supply of gas from the first region into the processing chamber, and a second section as a hole through which gas can pass, and when the second substrate is supported on the substrate support section, the first section is positioned above a surface of the substrate support section that is not supporting the second substrate.

9. The substrate processing apparatus according to claim 1, wherein a power supply system is connected to the gas supply unit, an electrode is provided on the substrate support unit, and the suppression unit is disposed between the electrode and the gas supply unit when processing the second substrate.

10. The substrate processing apparatus according to claim 9, wherein the suppression section is disposed between the first region and a portion of the electrode that faces the first region.

11. The substrate processing apparatus according to claim 9, wherein the suppression section has insulating properties.

12. A substrate processing apparatus as described in claim 1, further comprising a position control unit capable of controlling the positional relationship between the gas supply unit and the suppression unit, wherein the position control unit is configured to: control the distance between the suppression unit and the gas supply unit to a first distance when processing the first substrate; and control the distance between the suppression unit and the gas supply unit to be closer than the first distance when processing the second substrate.

13. The substrate processing apparatus according to claim 12, further comprising support pins capable of supporting the suppression unit, wherein the position control unit controls the distance between the suppression unit and the gas supply unit via the support pins.

14. A substrate processing apparatus as described in claim 13, wherein the suppression portion is provided at a position opposite the substrate support portion and has a first portion that suppresses the supply of gas from the first region into the processing chamber, and a second portion as a hole through which gas can pass, and the first portion is provided with a recess that can engage with the support pin.

15. The substrate processing apparatus according to claim 1, wherein the substrate support section is provided with a countersunk section capable of accommodating the suppression section, and when the first substrate is processed, the suppression section is accommodated in the countersunk section.

16. A substrate processing apparatus as described in claim 1, wherein a storage section capable of storing the suppression section is provided outside the processing chamber, the suppression section is stored in the storage section when the first substrate is processed, and the suppression section is moved from the storage section onto the support pins when the second substrate is processed.

17. A substrate processing apparatus as described in claim 1, wherein the substrate support section is provided with a first ring cover that supports the first substrate and has the first substrate positioned on its inner periphery, or a second ring cover that supports the second substrate and has the second substrate positioned on its inner periphery and has an inner diameter smaller than the inner diameter of the first ring cover.

18. A gas supply suppression structure used in a substrate processing apparatus having: a processing chamber for processing a substrate; a substrate support part provided in the processing chamber and capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; and a gas supply part provided opposite the substrate support part and having an annular first region having an inner diameter larger than the outer diameter of the second substrate and a second region provided on the inner periphery of the first region, and capable of supplying gas from the first region and the second region into the processing chamber, wherein the gas supply suppression structure is configured to suppress gas supply from the first region into the processing chamber when the second substrate is processed.

19. A substrate processing method comprising: a step of supporting a second substrate on a substrate support section provided in a processing chamber for processing a substrate, the substrate support section being capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; and a step of processing the second substrate by supplying gas into the processing chamber in a gas supply section having an annular first region having an inner diameter larger than the outer diameter of the second substrate and a second region provided on the inner periphery of the first region, the gas supply section being capable of supplying gas from the first region and the second region into the processing chamber while a suppression section suppresses the supply of gas from the first region into the processing chamber.

20. A method for manufacturing a semiconductor device, comprising the substrate processing method according to claim 19.

Images