Method for manufacturing electronic device

Abstract

Provided is a method for manufacturing an electronic device, the method including a cleaning step A for cleaning a surface protective film A of an electronic component having the surface protective film A on one surface, after at least one kind of processing selected from light irradiation and heating has been performed on the surface protective film A.

Description

Manufacturing method of electronic device

[0001] The present invention relates to a method for manufacturing an electronic device.

[0002] In the manufacture of electronic devices, for example, a surface protection film may be attached to the electronic device to prevent damage to electronic components. Techniques relating to a manufacturing method of an electronic device using a surface protection film include those described in Patent Documents 1 and 2, for example.

[0003] Patent Document 1 describes a semiconductor processing tape that is a laminate of a water-soluble film containing a polymer compound with a weight-average molecular weight of 200,000 or more and a low-molecular compound with a molecular weight of 800 or less, and a surface protection tape that protects the circuit surface of a semiconductor wafer. Patent Document 1 also describes that it is possible to provide a semiconductor processing tape that can be removed by washing with unheated water while achieving both grooving resistance and wafer adhesion.

[0004] Patent Document 2 describes a surface protection composition for protecting at least one surface of a substrate, the surface protection composition including a polymer having a hydrophilic group in the molecule and a compound that generates an acid or a base upon at least one of heating and irradiation with active energy rays. Patent Document 2 also describes that a surface protection composition can be provided for forming a protective layer that covers and protects at least one surface of a substrate in an electronic component device to be manufactured, and then is relatively easily removed upon contact with a liquid containing water.

[0005] JP 2023-043723 A International Publication No. 2023 / 195445 A

[0006] However, when a surface protective film is used in the manufacture of electronic devices, residues derived from the surface protective film may remain on the surface of the electronic component after the surface protective film is peeled off.

[0007] The present invention provides a method for producing an electronic device that can reduce residues originating from a surface protection film on the surface of an electronic component.

[0008] The present inventors have conducted extensive research to solve the above-mentioned problems, and as a result have found that, in a manufacturing process for an electronic device, residues originating from the surface protective film on the surface of an electronic component can be reduced by performing a step of cleaning the surface protective film after subjecting the surface protective film to at least one treatment selected from light irradiation and heating.

[0009] That is, according to the present invention, there is provided a method for manufacturing an electronic device as follows.

[0010] [1] A method for manufacturing an electronic device, comprising: a cleaning step A of cleaning a surface protective film A of an electronic component having one surface thereof after subjecting the surface protective film A to at least one treatment selected from light irradiation and heating. [2] The method for manufacturing an electronic device according to [1], further comprising a step of bonding a surface of the electronic component opposite to the surface protective film A side to a substrate A before the cleaning step A. [3] The method for manufacturing an electronic device according to [1] or [2], further comprising a DC step of dicing a structure A including at least a dicing tape, the surface protective film A, and the electronic component, in this order, before the cleaning step A. [4] The method for manufacturing an electronic device according to [3], wherein the structure A further includes a temporary fixing material and a substrate B, in this order, on a surface of the electronic component opposite to the surface protective film A. [5] The method for manufacturing an electronic device according to [4], further comprising a peeling step of peeling the temporary fixing material and the substrate B from the structure A before the DC step. [6] The method for manufacturing an electronic device according to [4] or [5], further comprising, before the DC step, a step of preparing a structure C including the electronic component, the temporary fixing material, and the substrate B in this order, and a BG step of back-grinding a surface of the structure C opposite to the surface of the electronic component on the side facing the temporary fixing material. [7] The method for manufacturing an electronic device according to [3], wherein the structure A further includes a surface protective film B on a surface of the electronic component opposite to the surface protective film A side. [8] The method for manufacturing an electronic device according to [7], further comprising, after the DC step, a cleaning step B of performing at least one treatment selected from light irradiation and heating on the surface protective film B and then cleaning the surface protective film B. [9] The method for manufacturing an electronic device according to [7] or [8], wherein the structure A further includes a temporary fixing material and a substrate B on the surface protective film B in this order.

[10] The method for manufacturing an electronic device according to [9], further comprising, before the DC step, a peeling step of peeling the temporary fixing material and the substrate B from the structure A.

[11] The method for manufacturing an electronic device according to [9] or

[10] , further comprising, before the DC step, a step of preparing a structure B including the electronic component, the surface protective film B, the temporary fixing material, and the substrate B in this order, and a back-grinding step of back-grinding the surface of the structure B opposite the surface protective film B side of the electronic component.

[12] The method for manufacturing an electronic device according to any of [1] to

[11] , further comprising, after the cleaning step A, a step of stacking another electronic component on the surface of the electronic component from which the surface protective film A has been cleaned.

[13] The method for manufacturing an electronic device according to any of [1] to

[12] , wherein the cleaning solution used in the cleaning step A includes one or more selected from the group consisting of organic solvents and water.

[14] The method for manufacturing an electronic device according to any of [1] to

[13] , wherein the electronic component has a through electrode.

[15] The method for manufacturing an electronic device according to any of [1] to

[14] , wherein the surface protective film A includes a film that can be cleaned with a cleaning solution by performing at least one treatment selected from light irradiation and heating.

[16] The method for manufacturing an electronic device according to any one of [1] to

[15] , wherein the surface protective film A comprises a surface protecting composition including a polymer (A) having an acid-decomposable group and an acid generator (B) including at least one selected from the group consisting of a photoacid generator and a thermal acid generator.

[17] The method for manufacturing an electronic device according to

[16] , wherein the acid-decomposable group includes one or more selected from the group consisting of an alkyl group and a group including an ether bond.

[18] The method for manufacturing an electronic device according to

[16] or

[17] , wherein the polymer (A) includes a structural unit (a) derived from the (meth)acrylate (a) having the acid-decomposable group.

[19] The method for manufacturing an electronic device according to any one of

[16] to

[18] , wherein the acid generator (B) includes a photoacid generator.

[20] The method for manufacturing an electronic device according to

[19] , wherein the photoacid generator includes one or more selected from the group consisting of a sulfonium salt-type photoacid generator, an iodonium salt-type photoacid generator, and a non-ionic photoacid generator.

[0011] According to the present invention, it is possible to provide a method for manufacturing an electronic device that can reduce residues originating from a surface protection film on the surface of an electronic component.

[0012] 1A and 1B are cross-sectional views schematically showing a method for manufacturing an electronic device according to a first embodiment of the present invention, and FIG. 1C are cross-sectional views schematically showing a method for manufacturing an electronic device according to a second embodiment of the present invention.

[0013] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all drawings, similar components are designated by similar reference numerals, and their description will be omitted where appropriate. All drawings are for illustrative purposes only. The shapes and dimensional ratios of each component in the drawings do not necessarily correspond to actual products. Furthermore, in this specification, "A to B" indicating a numerical range means A or more and B or less, unless otherwise specified.

[0014] In the present embodiment, "(meth)acrylic" means acrylic, methacrylic, or both acrylic and methacrylic.

[0015] <Method for Manufacturing an Electronic Device> (First Embodiment) A first embodiment of a method for manufacturing an electronic device according to the present invention will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view schematically illustrating the method for manufacturing an electronic device according to the first embodiment of the present invention.

[0016] (Cleaning Step A) The method for manufacturing an electronic device of this embodiment includes a cleaning step A (FIG. 1(h)) in which the surface protective film A (10) of an electronic component (20) having the surface protective film A (10) on one surface thereof is subjected to at least one treatment selected from light irradiation and heating, and then the surface protective film A (10) is cleaned.

[0017] In the method for manufacturing an electronic device according to this embodiment, after performing at least one treatment selected from light irradiation and heating on a surface protective film A provided on one surface of an electronic component, the surface protective film A can be cleaned. Therefore, before performing at least one treatment selected from light irradiation and heating, the surface protective film A can protect the electronic component from external particles, external stress, and the like. On the other hand, after performing at least one treatment selected from light irradiation and heating, the surface protective film A can be cleaned, thereby reducing residue of the surface protective film A on the surface of the electronic component where the surface protective film A was provided. Therefore, residue derived from the surface protective film can be reduced on the surface of the electronic component before and after performing at least one treatment selected from light irradiation and heating.

[0018] The cleaning step A (FIG. 1(h)) is carried out, for example, as follows: By subjecting the surface protective film A (10) to at least one treatment selected from light irradiation and heating, the structure of the surface protective film A (10) changes, making it possible to peel or dissolve and remove the surface protective film A (10) from the electronic component (20) using a cleaning liquid. As a result, by cleaning the surface protective film A (10) with a cleaning liquid, it is possible to further reduce residues originating from the surface protective film on the surface of the electronic component.

[0019] When the acid generator (B) in the surface protective film A (10) contains a photoacid generator, the surface protective film A (10) is preferably irradiated with light. The light irradiation is specifically UV irradiation, and preferably has an illuminance of 5 mW / cm. ２ More than 9000mW / cm ２ Irradiation time: 10 seconds or more and 300 seconds or less, cumulative light dose: 500 mJ / cm ２ More than 300J / cm ２Hereinafter, the irradiation is performed under ultraviolet conditions with a wavelength of 200 nm or more and 400 nm or less. Furthermore, the surface protective film A (10) may be heated in addition to light irradiation. By performing heating in addition to light irradiation, the cleaning ability can be further improved, thereby further reducing residues derived from the surface protective film on the surface of the electronic component. From the viewpoint of further improving the dissolution rate of the surface protective film A (10), the heating temperature is preferably 100°C or more and 200°C or less, more preferably 120°C or more and 180°C or less, and even more preferably 140°C or more and 160°C or less. Furthermore, the heating time is preferably 1 minute or more and 30 minutes or less, more preferably 2 minutes or more and 15 minutes or less. Light irradiation and heating may be performed simultaneously, or heating may be performed after light irradiation. Furthermore, when the acid generator (B) in the surface protective film A (10) contains a photoacid generator, it is more preferable to perform only light irradiation on the surface protective film A (10).

[0020] When the acid generator (B) in the surface protective film A (10) contains a thermal acid generator, it is preferable to heat the surface protective film A (10). The heating temperature is preferably 100° C. or higher and 200° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and even more preferably 140° C. or higher and 160° C. or lower. The heating time is preferably 1 minute or higher and 30 minutes or lower, more preferably 2 minutes or higher and 15 minutes or lower.

[0021] After the surface protective film A (10) is heated, irradiated with light, or heated and irradiated with light as described above, it is preferable to wash the surface protective film A (10) and the electronic component (20) with a cleaning liquid. The cleaning liquid in the cleaning step A (FIG. 1(h)) preferably contains one or more solvents selected from the group consisting of organic solvents and water, and more preferably contains water. The organic solvent contains, for example, one or more solvents selected from the group consisting of ethanol, methanol, isopropanol, and butanol. The organic solvent and water may be used singly or in combination of two or more solvents.

[0022] The electronic components (20) to be cleaned in the cleaning step A (FIG. 1(h)) may be singulated electronic components (21) that have been singulated in the DC step (FIG. 1(e)) described below.

[0023] (Dicing (DC) Process) The method for manufacturing an electronic device according to this embodiment may further include a DC process (FIG. 1(e)) of dicing a structure A (200) including at least a dicing tape (50), a surface protective film A (10), and an electronic component (20) in this order, prior to the cleaning process A (FIG. 1(h)). Dicing refers to the process of dividing the electronic component (20) into individual components to produce individual electronic components (21) and the like. In the DC process (FIG. 1(e)), it is preferable to dice the electronic component (20) in the structure A (200) from the side opposite to the side on which the dicing tape (50) and the surface protective film A (10) are provided. As the dicing method, a known method can be selected, and for example, one or more methods selected from the group consisting of plasma dicing, laser dicing, and blade dicing can be used. According to the method for manufacturing an electronic device of this embodiment, before performing at least one treatment selected from light irradiation and heating, the surface protective film A (10) can be prevented from being dissolved in water or peeled off from the electronic component (20). Therefore, for example, even when cutting water is used in a blade dicing method, the surface protective film A (10) can fulfill the surface protection function of the electronic component (20). Note that the dicing tape (50) and the surface protective film A (10) may be pre-bonded together to form an integrated tape. The structure A (200) may be formed by bonding the surface protective film A (10) side of this integrated tape to the electronic component (20).

[0024] In the method for manufacturing an electronic device according to this embodiment, the structure A (200) may further include a temporary fixing material (30) and a substrate B (40), in this order, on the surface of the electronic component (20) opposite the surface protective film A (10) ( FIG. 1( c)). Here, the substrate B (40) is, for example, a glass plate or a stainless steel plate, and is a layer for supporting the electronic component (20) in the BG process ( FIG. 1( b)) described below. The temporary fixing material (30) is a layer that contacts and adheres to the surface of the electronic component (20) opposite the surface protective film A (10) when the substrate B (40) is attached to the electronic component (20), and is also a layer that is peeled off from the electronic component (20) together with the substrate B (40) after the BG process ( FIG. 1( b)) described below. Examples of the temporary fixing material (30) include a heat-peelable adhesive resin layer whose adhesive strength decreases with heat, and a radiation-peelable adhesive resin layer whose adhesive strength decreases with radiation.

[0025] (Peeling Step) The method for manufacturing an electronic device according to this embodiment may further include a peeling step (FIG. 1(d)) of peeling the temporary fixing material (30) and the substrate B (40) from the structure A (200) before the DC step (FIG. 1(e)). By peeling the temporary fixing material (30) and the substrate B (40) from the structure A (200), the electronic component (20) is exposed, and the electronic component (20) can be diced in the DC step (FIG. 1(e)). The operation of peeling the temporary fixing material (30) and the substrate B (40) from the structure A (200) may be performed manually, but can generally be performed by a device known as an automatic peeler.

[0026] Before or after the DC step (FIG. 1(e)), a cleaning step C (FIG. 1(f)) may be performed, as necessary, to clean the surface of the electronic component (20) after peeling off the temporary fixing material (30) and the substrate B (40). Examples of cleaning methods include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. Ultrasonic cleaning may be used in combination with wet cleaning. These cleaning methods can be appropriately selected depending on the contamination level of the surface of the electronic component (20). According to the method for manufacturing an electronic device of this embodiment, before performing at least one treatment selected from light irradiation and heating, the surface protective film A (10) can be prevented from being dissolved by water or peeled off from the electronic component (20). Therefore, even if water, a solvent, or the like is used in the cleaning step C (FIG. 1(f)), the surface protective film A (10) can still perform its surface protection function for the electronic component (20).

[0027] (Backgrinding (BG) process) The manufacturing method of the electronic device of this embodiment may further include, before the DC process (FIG. 1(e)), a process of preparing a structure C (100) including an electronic component (20), a temporary fixing material (30), and a substrate B (40) in this order (FIG. 1(a)), and a BG process (FIG. 1(b)) of backgrinding the surface of the structure C (100) opposite to the surface of the electronic component (20) on the temporary fixing material (30) side. Such a structure C (100) can be produced, for example, by attaching the temporary fixing material (30) and the substrate B (40) in this order onto the electronic component (20) (FIG. 1(a)).

[0028] Here, backgrinding refers to thinning the electronic component (20) to a predetermined thickness without damaging it. For example, the structure C (100) is fixed to the chuck table of a grinding machine, and the back surface (non-circuit-forming surface) of the electronic component (20) is ground. The backgrinding method is not particularly limited, and known grinding methods can be used. Each grinding can be performed by pouring water over the electronic component (20) and the grinding stone to cool them. If necessary, a dry polishing process, which is a grinding method that does not use grinding water, can be performed at the end of the grinding process. After backgrinding is completed, chemical etching is performed as needed. Chemical etching is performed by immersing the electronic component (20) in an etching solution selected from the group consisting of an acidic aqueous solution consisting of, or a mixture of, hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc., and an alkaline aqueous solution such as potassium hydroxide aqueous solution or sodium hydroxide aqueous solution. Etching is performed for the purposes of removing distortion generated on the back surface of the electronic component (20), further thinning the electronic component (20), removing oxide films, etc., pretreatment for forming electrodes on the back surface, etc. The etching solution is appropriately selected depending on the above purposes.

[0029] (D2W Bonding Process) The manufacturing method for an electronic device according to this embodiment may further include a process (FIG. 1(g)) of bonding the surface of the electronic component (20) (singulated electronic component (21)) opposite to the surface on which the surface protective film A (10) is formed to the substrate A (70) before the cleaning process A (FIG. 1(h)). Here, it is preferable that the electronic component (20) (singulated electronic component (21)) is directly bonded to the substrate A (70). This process is called a D2W bonding (die-to-wafer bonding) process. The substrate A (70) represents, for example, a semiconductor wafer. By directly stacking the electronic component (20) (singulated electronic component (21)) and the substrate A (70), the electronic component (20) (singulated electronic component (21)) and the substrate A (70) can be electrically connected to each other via the through electrodes (22) described below. When the above-mentioned cleaning step C (FIG. 1(f)) is performed, the D2W bonding step (FIG. 1(g)) is preferably performed after the cleaning step C (FIG. 1(f)), and it is preferable that the substrate A (70) is bonded to the cleaned surface of the electronic component (20) (the singulated electronic component (21)) in the cleaning step C (FIG. 1(f)).

[0030] Furthermore, the method for manufacturing an electronic device according to this embodiment may further include a step (not shown) of peeling the dicing tape (50) from the surface protective film A (10) after the D2W bonding step (FIG. 1(g)) and before the cleaning step A (FIG. 1(h)). This exposes the surface protective film A (10), allowing for smoother cleaning of the surface protective film A (10) in the cleaning step A (FIG. 1(h)).

[0031] In the method for manufacturing an electronic device according to this embodiment, the electronic component (20) may have a through electrode (22). A through electrode refers to, for example, a through hole formed vertically inside a substrate and provided with electrical conductivity. As will be described later, this through electrode connects upper and lower electronic components when multiple electronic components are directly stacked. The through electrode (22) can be formed on the electronic component (20) of the structure C (100) before or after the BG step ( FIG. 1( b) ). The through electrode can be produced by forming a through hole in the electronic component (20) and then providing electrical conductivity by copper plating or the like.

[0032] The method for manufacturing an electronic device according to this embodiment may include, after the cleaning step A (FIG. 1(h)), a step (FIG. 1(i)) of stacking another electronic component (80) on the cleaned surface of the electronic component (20) (electronic component (21)) from which the surface protective film A (10) has been removed. Here, it is preferable that the other electronic component (80) is stacked directly on the electronic component (20) (electronic component (21) after separation). By directly stacking the other electronic component (80) and the electronic component (20) (electronic component (21) after separation), the electronic components can be electrically connected to each other via the through electrodes (22) described above. According to the method for manufacturing an electronic device according to this embodiment, residues derived from the surface protective film on the surface of the electronic component (20) (electronic component (21) after separation) can be further reduced, and therefore poor connection can be further suppressed even when electronic components are directly stacked on each other.

[0033] Second Embodiment A second embodiment of the method for manufacturing an electronic device according to the present invention will be described with reference to FIG. 2. FIG. 2 is a cross-sectional view schematically illustrating the method for manufacturing an electronic device according to the second embodiment of the present invention. In the second embodiment, the cleaning step A (FIG. 2(h)), DC step (FIG. 2(e)), D2W bonding step (FIG. 2(g)), and lamination step (FIG. 2(i)) are performed in accordance with the first embodiment.

[0034] In a second embodiment of the method for manufacturing an electronic device according to the present embodiment, the structure A (200) may further include a surface protective film B (60) on the surface opposite to the surface of the electronic component (20) on which the surface protective film A (10) is formed. When the structure A (200) further includes the surface protective film B (60), the surface protective film B (60) can function as a resist when an ablation dicing method or a plasma dicing method is performed in the DC process (FIG. 2(e)).

[0035] (Cleaning Process B) A second embodiment of the method for manufacturing an electronic device according to the present embodiment may further include a cleaning process B (FIG. 2(f)) in which the surface protective film B (60) is subjected to at least one treatment selected from light irradiation and heating after the DC process (FIG. 2(e)). This can further reduce residues from the surface protective film B (60) on the diced electronic component (20) in the cleaning process B (FIG. 2(f)). Therefore, in the subsequent D2W bonding process (FIG. 2(g)), even when the electronic component (20) (the individualized electronic component (21)) is directly bonded to the substrate A (70), poor connection and the like can be further suppressed. In the cleaning process B (FIG. 2(f)), light irradiation, heating, cleaning, and the like can be performed under conditions similar to those of the above-described cleaning process A (FIG. 1(h)).

[0036] When the structure A (200) includes a surface protective film B (60), the structure A (200) may further include a temporary fixing material (30) and a substrate B (40) in this order on the surface protective film B (60) (FIG. 2(c)). Details of the temporary fixing material (30) and the substrate B (40) are omitted here, as they have been explained in the first embodiment. When the structure A (200) includes a surface protective film B (60), the structure A (200) can be produced, for example, by attaching the surface protective film B (60), the temporary fixing material (30), and the substrate B (40) in this order onto the electronic component (20) (FIG. 2(a)).

[0037] (Peeling Step) A second embodiment of the method for producing an electronic device according to the present embodiment may further include a peeling step (FIG. 2(d)) of peeling the temporary fixing material (30) and the substrate B (40) from the structure A (200) before the DC step (FIG. 2(e)). The peeling step (FIG. 2(d)) can be performed in accordance with the peeling step (FIG. 1(d)) in the first embodiment. In the second embodiment, the structure A (200) includes a surface protective film B (60) between the electronic component (20) and the temporary fixing material (30). Therefore, after peeling the temporary fixing material (30) and the substrate B (40) from the structure A (200), residues of the temporary fixing material (30) remain on the surface protective film B (60). The surface protective film B (60) is washed in the washing step B (FIG. 2(f)). This is preferable in that residues of the temporary fixing material (30) do not remain on the electronic component (20) compared to when the surface protective film B (60) is not present.

[0038] (Backgrinding (BG) Process) A second embodiment of the method for manufacturing an electronic device according to the present embodiment may further include, before the DC process (FIG. 2(e)), a process for preparing a structure B (300) including an electronic component (20), a surface protective film B (60), a temporary fixing material (30), and a substrate B (40) in this order (FIG. 2(a)), and a BG process (FIG. 2(b)) for backgrinding the surface of the structure B (300) opposite to the surface of the electronic component (20) on which the surface protective film B (60) is formed (FIG. 2(a)). Such a structure B (300) can be produced, for example, by attaching the surface protective film B (60), the temporary fixing material (30), and the substrate B (40) in this order onto the electronic component (20) (FIG. 2(a)). The BG process (FIG. 2(b)) can be carried out by a method similar to the BG process (FIG. 1(b)) in the first embodiment.

[0039] The electronic device manufacturing method of this embodiment can reduce residues derived from surface protective films on the surfaces of electronic components (20) during the manufacturing process of the electronic device. Examples of electronic components include semiconductor chips, semiconductor panels, semiconductor packages, and semiconductor wafers. Furthermore, the electronic device of this embodiment includes, for example, a single electronic component, a packaged electronic component, a combination of multiple electronic components, and a substrate on which electronic components or packaged electronic devices are mounted. Among these, the electronic device manufacturing method of this embodiment is preferably used for manufacturing electronic devices (e.g., semiconductor packages) that directly stack and connect electronic components without using bumps, a process known as hybrid bonding. More specifically, the electronic device manufacturing method of this embodiment is preferably used for electronic devices (e.g., high bandwidth memory (HBM)) that stack electronic components (e.g., DRAM) that have through-electrodes (e.g., through-silicon vias (TSVs)). In such electronic devices, electronic components are directly stacked on one another and connected via through electrodes, so connection defects are likely to occur due to fine residues (particles) remaining after tape peeling off of a surface protective film, etc., when bonding the electronic components. According to the manufacturing method for an electronic device of this embodiment, the surface protective film can be cleaned, thereby reducing the fine residues on the surfaces of the electronic components and further suppressing connection defects in the electronic device.

[0040] Next, the surface protective film A (10) in the manufacturing method of the electronic device of this embodiment will be described. Note that the surface protective film B (60) can also be made of the same material and have the same structure as the surface protective film A (10).

[0041] <Surface Protective Film> The surface protective film A (10) preferably includes a film that can be cleaned with a cleaning solution by being subjected to at least one treatment selected from light irradiation and heating. Furthermore, the surface protective film A (10) more preferably comprises one or more selected from the group consisting of a film that becomes soluble in water upon at least one treatment selected from light irradiation and heating; a film that becomes soluble in warm water (e.g., 40°C or higher and 90°C or lower, preferably 50°C or higher and 80°C or lower); a film that becomes soluble in an organic solvent; a film that becomes peelable by water; a film that becomes peelable by warm water (e.g., 40°C or higher and 90°C or lower, preferably 50°C or higher and 80°C or lower); and a film that becomes peelable by an organic solvent. More preferably, the surface protective film A (10) comprises one or more selected from the group consisting of a film that becomes soluble in water upon at least one treatment selected from light irradiation and heating; a film that becomes soluble in warm water (e.g., 40°C or higher and 90°C or lower, preferably 50°C or higher and 80°C or lower); and a film that becomes soluble in an organic solvent. Even more preferably, the surface protective film A (10) comprises one or more selected from the group consisting of a film that becomes soluble in water upon at least one treatment selected from light irradiation and heating.

[0042] The surface protective film A (10) preferably contains a surface protective composition containing a polymer (A) having an acid-decomposable group and an acid generator (B) containing at least one selected from a photoacid generator and a thermal acid generator. When the surface protective film A (10) is subjected to at least one treatment selected from light irradiation and heating, the acid generator (B) generates an acid, which decomposes the acid-decomposable group in the polymer (A). This improves the cleanability of the surface protective film A (10) bonded to the electronic component (20), and further reduces residues originating from the surface protective film on the surface of the electronic component.

[0043] (Polymer (A)) The acid-decomposable group in the polymer (A) preferably contains one or more selected from the group consisting of alkyl groups and groups containing an ether bond. This further improves the cleanability of the surface protective film A (10) and further reduces residues derived from the surface protective film on the surface of the electronic component. Furthermore, from the viewpoint of enabling water cleaning by light irradiation alone, the acid-decomposable group in the polymer (A) more preferably contains a group containing an ether bond. From the viewpoint of further improving the water washability of the resulting film, the group containing an ether bond preferably contains one or more selected from the group consisting of ethoxyethyl, propoxyethyl, isopropoxyethyl, butoxyethyl, isobutoxyethyl, (cyclohexyloxy)ethyl, and tetrahydropyranyl groups, more preferably contains one or more selected from the group consisting of ethoxyethyl, propoxyethyl, isopropoxyethyl, butoxyethyl, and tetrahydropyranyl groups, and even more preferably contains one or more selected from the group consisting of ethoxyethyl, propoxyethyl, isopropoxyethyl, and butoxyethyl groups. From the viewpoint of further improving the washability of the surface protective film A (10), the alkyl group preferably contains at least one selected from the group consisting of a tert-butyl group and an isobornyl group, more preferably contains a tert-butyl group.

[0044] The polymer (A) preferably contains a structural unit (a) derived from a (meth)acrylate (a) having an acid-decomposable group. By including a structural unit (a) derived from a (meth)acrylate (a) in the polymer (A), the water resistance of the surface protective film A (10) can be improved. Therefore, for example, in the DC process described above (FIGS. 1(e) and 2(e)), when using a blade dicing method on the structure A (200), the surface protective film A (10) is not dissolved or peeled off from the electronic component (20) by cutting water or the like, so the electronic component (20) can be more reliably protected. When the acid-decomposable group contains an alkyl group, the (meth)acrylate (a) in the structural unit (a) preferably contains an acrylate from the viewpoint of maintaining the water resistance of the surface protective film A (10) while further improving its cleanability. When the acid-decomposable group contains a group containing an ether bond, the (meth)acrylate (a) in the structural unit (a) preferably contains methacrylate from the viewpoints of further improving the water washability of the resulting film while maintaining the water resistance of the surface protective film A (10) and further improving the coating properties.

[0045] The acid generator (B) preferably includes at least one selected from a photoacid generator and a thermal acid generator, more preferably a photoacid generator, from the viewpoint of further improving the cleanability of the surface protective film A (10). The photoacid generator preferably includes one or more selected from a sulfonium salt-type photoacid generator, an iodonium salt-type photoacid generator, and a nonionic photoacid generator, from the viewpoint of further improving the cleanability of the surface protective film A (10). When the acid-decomposable group in the structural unit (a) in the polymer (A) includes an alkyl group, the photoacid generator preferably includes a nonionic photoacid generator, more preferably a nonionic photoacid generator having a diazomethane structure, from the viewpoint of further improving the cleanability of the surface protective film A (10). When the acid-decomposable group in the structural unit (a) in the polymer (A) includes a group containing an ether bond, the photoacid generator may include any of the sulfonium salt-type photoacid generator, iodonium salt-type photoacid generator, and nonionic photoacid generator described above. Examples of the thermal acid generator include aromatic sulfonium salts, aromatic iodonium salts, ammonium salts, aluminum chelates, and boron trifluoride amine complexes.

[0046] Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various other configurations may be adopted. Furthermore, the present invention is not limited to the above-described embodiments, and modifications and improvements that do not impair the effects of the present invention are included in the present invention.

[0047] This application claims priority based on Japanese Patent Application No. 2024-056245, filed March 29, 2024, the disclosure of which is incorporated herein in its entirety by reference.

[0048] REFERENCE SIGNS LIST 10 Surface protection film A 20 Electronic component 21 Electronic component after singulation 22 Through electrode 30 Temporary fixing material 40 Substrate B 50 Dicing tape 60 Surface protection film B 70 Substrate A 80 Other electronic component 100 Structure C 200 Structure A 300 Structure B

Claims

1. A method for manufacturing an electronic device, comprising a cleaning step A in which an electronic component having a surface protective film A on one side thereof is subjected to at least one treatment selected from light irradiation and heating, and then the surface protective film A is cleaned.

2. The method for manufacturing an electronic device according to claim 1, further comprising the step of attaching the surface of the electronic component opposite to the surface on which the surface protection film A is formed to a substrate A before the cleaning step A.

3. The method for manufacturing an electronic device according to claim 1 or 2, further comprising, before the cleaning step A, a DC step of dicing a structure A having at least a dicing tape, the surface protection film A, and the electronic component in this order.

4. The method for manufacturing an electronic device according to claim 3, wherein the structural body A further comprises a temporary fixing material and a substrate B, in this order, on the surface of the electronic component opposite to the surface protective film A.

5. The method for manufacturing an electronic device according to claim 4, further comprising a peeling step of peeling the temporary fixing material and the substrate B from the structure A before the DC step.

6. A method for manufacturing an electronic device according to claim 4 or 5, further comprising, before the DC process, a step of preparing a structure C having the electronic component, the temporary fixing material, and the substrate B in this order, and a BG process of back-grinding the surface of the structure C opposite to the surface of the electronic component on the temporary fixing material side.

7. The method for manufacturing an electronic device according to claim 3, wherein the structural body A further comprises a surface protective film B on the surface opposite to the surface on the surface protective film A side of the electronic component.

8. The method for manufacturing an electronic device according to claim 7, further comprising, after the DC step, subjecting the surface protection film B to at least one treatment selected from light irradiation and heating, and then cleaning the surface protection film B.

9. The method for manufacturing an electronic device according to claim 7 or 8, wherein the structure A further comprises a temporary fixing material and a substrate B on the surface protection film B in this order.

10. The method for manufacturing an electronic device according to claim 9, further comprising a peeling step of peeling the temporary fixing material and the substrate B from the structure A before the DC step.

11. A method for manufacturing an electronic device as described in claim 9 or 10, further comprising, before the DC process, a process of preparing a structure B comprising the electronic component, the surface protective film B, the temporary fixing material, and the substrate B in this order, and a BG process of back-grinding the surface of the structure B opposite to the surface of the electronic component on the surface protective film B side.

12. A method for manufacturing an electronic device according to any one of claims 1 to 11, further comprising, after the cleaning step A, a step of stacking another electronic component on the surface of the electronic component from which the surface protection film A has been cleaned.

13. The method for manufacturing an electronic device according to any one of claims 1 to 12, wherein the cleaning liquid in the cleaning step A contains one or more selected from the group consisting of organic solvents and water.

14. The method for manufacturing an electronic device according to any one of claims 1 to 13, wherein the electronic component has a through electrode.

15. A method for manufacturing an electronic device according to any one of claims 1 to 14, wherein the surface protection film A includes a film that can be cleaned with a cleaning solution by performing at least one treatment selected from light irradiation and heating.

16. A method for manufacturing an electronic device according to any one of claims 1 to 15, wherein the surface protective film A comprises a surface protective composition containing a polymer (A) having an acid-decomposable group and an acid generator (B) including at least one selected from a photoacid generator and a thermal acid generator.

17. The method for producing an electronic device according to claim 16, wherein the acid-decomposable group includes one or more groups selected from the group consisting of alkyl groups and groups containing an ether bond.

18. The method for producing an electronic device according to claim 16 or 17, wherein the polymer (A) contains a structural unit (a) derived from the (meth)acrylate (a) having an acid-decomposable group.

19. The method for manufacturing an electronic device according to any one of claims 16 to 18, wherein the acid generator (B) includes a photoacid generator.

20. The method for manufacturing an electronic device according to claim 19, wherein the photoacid generator comprises one or more selected from the group consisting of a sulfonium salt-type photoacid generator, an iodonium salt-type photoacid generator, and a non-ionic photoacid generator.

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