Stage and method for manufacturing stage

Abstract

This stage for mounting a substrate thereon includes: a base material having a first surface, and a second surface on the side opposite first surface; a first insulating film that is disposed on the base material and that includes a third surface, a fourth surface in contact with the first surface and on the side opposite the third surface, and a plurality of holes provided on the third surface side; and a second insulating film that is disposed on the first insulating film and that includes a fifth surface, a sixth surface in contact with the third surface and on the side opposite the fifth surface, and an intrusion part in contact with side walls of the plurality of holes and intruding into the plurality of holes.

Description

Stage and method for manufacturing the stage

[0001] One embodiment of the present invention relates to a stage for placing a substrate thereon, and also to a method for manufacturing a stage for placing a substrate thereon.

[0002] Semiconductor devices are devices that utilize the semiconducting properties of silicon and other materials. In recent years, semiconductor devices have been installed in almost all electronic devices, enabling control according to the functions of each electronic device. Semiconductor devices are constructed by stacking insulating and conductive films on a substrate such as a silicon wafer (Si-wafer) and patterning these films or the substrate. For example, these films are stacked on the substrate using semiconductor manufacturing equipment that enables evaporation, sputtering, chemical vapor deposition (CVD), or chemical reactions on the substrate, and these films or substrates are patterned using semiconductor manufacturing equipment that enables a photolithography process. The photolithography process includes forming a resist on the films to be patterned, exposing the resist, forming a resist mask by development, partially removing the films by etching, and removing the resist mask.

[0003] A semiconductor manufacturing apparatus includes a mounting table (hereinafter referred to as a stage) on which a substrate is placed. The characteristics of the above-mentioned film are greatly influenced by the conditions for forming the film, the conditions for etching the film, and the like. For example, such conditions include the gas (reactive gas) supplied to the semiconductor manufacturing apparatus and the voltage applied to the stage. Therefore, for example, the stage and components included in the stage are required to be inhibited from corrosion by the gas (reactive gas) (high corrosion resistance) and to be inhibited from deterioration due to the applied voltage (high withstand voltage and insulation). Note that, for example, components included in the stage include a cooling plate, an electrostatic chuck, a heater, and the like.

[0004] Known methods for forming an insulating film on the surface of a substrate included in a stage include thermal spraying (e.g., ceramic thermal spraying), anodic oxidation, etc. Patent Documents 1 and 2 describe stages including a substrate on whose surface an insulating film is formed by ceramic thermal spraying, with the aim of preventing a decrease in the insulating properties of the stage.

[0005] JP 2014-013874 A Registered Utility Model No. 2600558 A

[0006] On the other hand, insulating films formed on the surface of a substrate by conventional methods are prone to cracks. For example, when an insulating film contains cracks, the dielectric strength of the insulating film decreases, and the corrosion resistance, dielectric strength, and insulating properties of the stage also decrease. One known measure to suppress the decrease in dielectric strength of an insulating film is to form a protective film on the insulating film to protect the insulating film. However, if the adhesive strength between the protective film and the insulating film is low, the protective film will peel off from the insulating film, making it difficult to suppress the decrease in dielectric strength of the insulating film. If there is a problem with the dielectric strength of the insulating film, the corrosion resistance, dielectric strength, and insulating properties of the stage, or the adhesiveness between the protective film and the insulating film, the long-term reliability of the stage will decrease.

[0007] An object of the embodiments of the present invention is to provide a stage capable of suppressing a decrease in reliability over the long term. Another object of the embodiments of the present invention is to provide a method for manufacturing a stage capable of suppressing a decrease in reliability over the long term.

[0008] A stage for supporting a substrate according to one embodiment of the present invention includes a base material having a first surface and a second surface opposite the first surface, a third surface, a fourth surface in contact with the first surface and opposite the third surface, and a first insulating film disposed on the base material, the first insulating film including a plurality of holes provided on the third surface side, a fifth surface, a sixth surface in contact with the third surface and opposite the fifth surface, and a second insulating film disposed on the first insulating film, the second insulating film including an intrusion portion in contact with side walls of the plurality of holes and intruding into the plurality of holes.

[0009] A method for manufacturing a stage for supporting a substrate according to one embodiment of the present invention includes using a base material having a first surface and a second surface opposite the first surface; forming a first insulating film on the first surface, the first insulating film including a third surface, a fourth surface opposite the third surface, and a plurality of holes provided on the third surface side; and forming a second insulating film in contact with the third surface and side walls of the plurality of holes and including penetration portions that penetrate into the plurality of holes.

[0010] According to one embodiment of the present invention, there is provided a stage capable of suppressing a decrease in long-term reliability. Also, according to one embodiment of the present invention, there is provided a method for manufacturing a stage capable of suppressing a decrease in long-term reliability.

[0011] FIG. 1 is a perspective view showing the configuration of a stage according to a first embodiment of the present invention. FIG. 2 is a plan view showing the configuration of a stage according to the first embodiment of the present invention. FIG. 3 is a schematic view showing a cross section of the stage taken along line A1-A2 of the stage shown in FIG. 2. FIG. 4 is a schematic view showing a cross section of a conventional stage. FIG. 5 is a flowchart showing a method for manufacturing the stage according to the first embodiment of the present invention. FIG. 6 is a schematic view for explaining the method for manufacturing the stage according to the first embodiment of the present invention. FIG. 7 is a schematic view showing a cross section of a semiconductor manufacturing device including a stage according to a second embodiment of the present invention.

[0012] A stage or a method for manufacturing a stage according to one embodiment of the present invention will be described below with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and should not be construed as being limited to the description of the embodiment exemplified below.

[0013] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements having the same functions as those explained with reference to the previous drawings may be assigned the same reference numerals, and duplicate explanations may be omitted.

[0014] In this specification and drawings, the same reference numerals are used to collectively refer to the same or similar components, and a hyphen and a number are added after the reference numerals to refer to them individually.

[0015] In this specification, the letters "first," "second," or "third" attached to each component are convenient labels used to distinguish each component, and have no other meaning unless otherwise specified.

[0016] In the following description, for convenience of explanation, terms indicating directions such as "up" and "down" may be used. The direction in which gravity acts on the stage is "down" and the opposite direction is "up."

[0017] 1. First Embodiment A stage 100 according to a first embodiment of the present invention will be described with reference to FIGS.

[0018] [1-1. Overview of Stage 100] An overview of the stage 100 will be described with reference to Figures 1 to 3. Figure 1 is a perspective view showing the configuration of the stage 100. Figure 2 is a plan view showing the configuration of the stage 100. Figure 3 is a cross-sectional view showing a cross section of the stage 100 taken along the line A1-A2.

[0019] The stage 100 has a disk-like shape. For example, the stage 100 has a diameter that allows a 12-inch silicon wafer to be placed thereon. The stage 100 also includes a base material 110, a first insulating film 120, a second insulating film 130, an upper surface (first surface 132) on which a substrate (e.g., a silicon wafer) can be placed, a bottom surface (second surface 114), holes 102, and grooves 104. The arrangement, number, and shape of the holes 102 and grooves 104 may be changed as appropriate depending on the specifications and applications of the semiconductor manufacturing equipment.

[0020] The substrate 110 includes a first surface 112 and a second surface 114 opposite to the first surface 112. Note that the substrate 110 may be formed by bonding a plurality of substrates together.

[0021] The first insulating film 120 includes a first surface 122 and a second surface 124 opposite to the first surface 122. The first insulating film 120 is provided so as to cover and be in contact with the substrate 110. The second surface 124 of the first insulating film 120 is in contact with the first surface 112 of the substrate 110. The first insulating film 120 is also provided so as to cover and be in contact with the inner walls of the holes 102 and the inner walls of the grooves 104. Although not shown, the first insulating film 120 is also provided so as to cover and be in contact with the side surfaces of the substrate 110. As an example, the first insulating film 120 in the stage 100 shown in FIG. 2 is provided on the first surface 112 of the substrate 110, but the first insulating film 120 may be provided so as to cover and be in contact with the second surface 114.

[0022] The second insulating film 130 includes a first surface 132 and a second surface 134 opposite to the first surface 132. The second insulating film 130 is provided so as to cover and be in contact with the first insulating film 120. The second surface 134 of the second insulating film 130 is in contact with the first surface 122 of the first insulating film 120. Furthermore, for example, the second insulating film 130 is provided so as to cover and be in contact with the first insulating film 120 provided on the inner wall of the hole 102 and the inner wall of the groove portion 104. Note that the second insulating film 130 does not have to cover the first insulating film 120 provided on the inner wall of the hole 102.

[0023] The groove 104 may be a flow path for circulating a medium. For example, the medium is used to control the temperature of a substrate placed on the stage 100. For example, the medium is a liquid such as water, an alcohol such as isopropanol or ethylene glycol, or silicone oil. It may also be a gas with good thermal conductivity such as helium (He). The medium may be used to cool the stage 100 or to heat the stage 100. For example, the groove 104 may be included inside a bonded substrate in which multiple substrates are bonded together.

[0024] Although not shown, for example, a space may be included inside a bonded substrate formed by bonding multiple substrates, and the stage 100 may be configured to circulate the medium through the space. Also, for example, a heat source may be disposed in the space. The heat source, like the medium, is used to control the temperature of the substrate placed on the stage 100. For example, the heat source is a sheathed heater. The sheathed heater has the function of generating heat when electricity is applied.

[0025] The holes 102 are holes for lift pins that lift up the substrate placed on the stage 100 .

[0026] The material used for the substrate 110 is metal, ceramic, or the like. The material used for the substrate 110 may also be glass. For example, the metal is an alloy such as aluminum (Al), titanium (Ti), or stainless steel. One example of the material used for the substrate 110 is aluminum.

[0027] The material used for the first insulating film 120 may be a material capable of satisfying the desired insulating properties, may be a material capable of satisfying the desired withstand voltage characteristics, or may be a material capable of satisfying the desired corrosion resistance. For example, the material used for the first insulating film 120 is an inorganic insulating material. For example, the inorganic insulating material is a metal oxide, specifically an oxide containing at least one element selected from alkaline earth metals, rare earth metals, aluminum, tantalum (Ta), titanium, chromium (Cr), zirconium (Zr), yttrium (Y), silicon (Si), and niobium (Nb), or a composite oxide thereof. For example, the material used for the first insulating film 120 is aluminum oxide (Al ２ O ３ )

[0028] The material used for the second insulating film 130 is a material that has excellent adhesion to the first insulating film 120. The material used for the second insulating film 130 may be a material that can satisfy the desired insulating properties, the desired withstand voltage characteristics, or the desired corrosion resistance. For example, the material used for the second insulating film 130 of the stage 100 is a resin material. Examples of resin materials include polyimide resin, polyetherimide resin, polyamideimide resin, polytetrafluoroethylene resin, polyetheretherketone resin, and polyphenylene sulfide resin. An example of the material used for the second insulating film 130 includes polybenzimidazole (PBI).

[0029] [1-2. Example of a Cross Section of the Stage 100] The cross-sectional configuration of the stage 100 will be described with reference to Figures 3 and 4. Figure 4 is a schematic diagram showing the cross section of a conventional stage. Configurations that are the same as or similar to those in Figures 1 to 3 will be described as necessary.

[0030] As described in "1-1," the first insulating film 120 contains aluminum oxide and is provided so as to cover and be in contact with the base material 110.

[0031] As described in "1-1," the second insulating film 130 includes polybenzimidazole. As shown in more detail in FIG. 3 , the second insulating film 130 is provided on the first surface 112 in a first region (e.g., region 200) that does not include cracks (gaps) 125c-1, 125c-2, and 125c-3, and on the first surface 112 in a region (second region) in the first insulating film 120 that includes cracks 125c-1, 125c-2, and 125c-3. For example, the cracks include cracks 125c-2 and 125c-3 that do not reach the first surface 112, and crack 125c-1 that reaches the first surface 112.

[0032] The first insulating film 120 and the second insulating film 130 are stacked in the region 200. A gap (space) may be provided between the substrate 110 and the second insulating film 130, and the second insulating film 130 may fill all or part of the cracks 125c-1 to 125c-3. The cracks 125c-1 to 125c-3 are provided between the first insulating films 120. In other words, it can be said that the second region is adjacent to the first region (region 200), and the first region (region 200) is provided between the second regions.

[0033] 3, the first insulating film 120 includes a plurality of holes 140. Each of the plurality of holes 140 includes a sidewall (inner wall) 142 and a bottom 144. As will be described in detail later, the method for manufacturing the stage 100 does not necessarily include a hole-sealing process. Here, for example, the hole-sealing process is a process for improving the corrosion resistance or weather resistance of the insulating film including the holes by covering the sidewalls and bottoms of the holes with an insulating film rather than filling the holes with the insulating film.

[0034] For example, the second insulating film 130 of the stage 100 includes an intrusion portion 136 that intrudes into the hole 140, contacts the sidewall 142, and is spaced apart from the bottom 144. The intrusion portion 136 fills at least a portion of the hole 140 along the sidewall 142 of the hole 140. The distance between the second insulating film 130 and the bottom 144 may be the same for each of the multiple holes 140, may be different for each of the multiple holes 140, or may be the same for some of the multiple holes 140 and different for others. Similarly to the distance between the second insulating film 130 and the bottom 144, the diameters of the multiple holes 140 may be the same for each of the multiple holes 140, may be different for each of the multiple holes 140, or may be the same for some of the holes 140 and different for others. Note that, by separating the second insulating film 130 (intrusion portion 136) from the bottom 144 and leaving a part of the hole 140 between the intrusion portion 136 and the bottom 144, it may be expected that heat conduction will be suppressed due to the insulating effect. Furthermore, the intrusion portion 136 may be provided so as to intrude into the hole 140 and to contact the side wall 142 and the bottom 144 of the hole 140. Furthermore, although not shown in the drawings, the intrusion portion 136 may be provided so as to be separated from the side wall 142 and the bottom 144 of the hole 140.

[0035] For example, the hole diameter W1 of the crack 125c-1 (hole diameter on the first surface 132 side) is 0.1 μm or more and 20 μm or less, and the hole diameter W2 of the hole 140 may be 1 nm or more and 50 nm or less, or may be 10 nm or more and 20 nm or less. Furthermore, for example, the thickness T1 of the substrate 110 is approximately 30 mm, the thickness T2 of the first insulating film 120 may be 5 μm or more and 100 μm or less, preferably 10 μm or more and 50 μm or less, and the thickness T3 of the second insulating film 130 may be 0.1 μm or more and 100 μm or less, preferably 1 μm or more and 50 μm or less. The thicknesses T2 and T3 are, for example, 30 μm and 15 μm. The hole diameter W2 is much smaller than the hole diameter W1, and the thickness T3 is sufficiently thinner than the thickness T1. The thickness T3 may be equal to or smaller than the thickness T2, or may be sufficiently thin.

[0036] Here, a conventional stage will be described with reference to FIG. 4 . For example, a conventional stage fabrication method includes a pore-sealing process. For example, in a stage that has undergone the pore-sealing process, the sidewalls and bottoms of the holes 140 in the first insulating film 120 are not at least partially filled with the hydrated oxide 150, but rather the hydrated oxide 150 covers the sidewalls and bottoms of the holes 140. In this state, the second insulating film 130 is formed. As will be described in detail later, when the adhesion strength of the conventional stage is measured, it is found that the adhesion strength between the second insulating film 130 and the first insulating film 120 is low, and therefore the second insulating film 130 is easily peeled off from the first insulating film 120.

[0037] On the other hand, the second insulating film 130 is in contact with the first insulating film 120 (the first surface 122 and the cracks 125c-1 to 125c-3), and therefore has high adhesion to the first insulating film 120 (the first surface 122 and the cracks 125c-1 to 125c-3). Furthermore, the intrusion portion 136 of the second insulating film 130 intrudes into the hole 140 and contacts a portion of the sidewall 142 of the plurality of holes 140 along a portion of the sidewall 142 of the plurality of holes 140, and therefore has high adhesion between the second insulating film 130 and the plurality of holes 140. As a result, the first insulating film 120 is covered by the second insulating film 130 and is not exposed. Furthermore, since the base material 110 is covered by the first insulating film and the second insulating film 130 and is in contact with the first insulating film and is not exposed, the insulating properties of the base material 110 are higher than those of a base material that includes cracks (gaps) or holes.

[0038] Furthermore, since the second insulating film 130 can sufficiently cover the first surface 122, the cracks 125c-1 to 125c-3, and the plurality of holes 140, the second insulating film 130 has high coverage performance for the first insulating film 120. Therefore, the first insulating film 120 and the second insulating film 130 have high coverage performance for the substrate 110.

[0039] Here, as an example of measurement results, the measurement results of the adhesion strength of the second insulating film 130 will be described with reference to Table 1. In the sample of the stage 100 used in the measurement, the first insulating film 120 and the second insulating film were stacked in this order on the substrate 110 without performing a sealing treatment. In the sample of the stage according to the conventional technology, the sealing treatment was performed, and the first insulating film 120 and the second insulating film were stacked in this order on the substrate 110. As an example, the measurement was performed using a Romulus tensile tester, and measurement points were four points on the stage. The adhesion strength shown in Table 1 is the average value of the four points. As shown in Table 1, the adhesion strength of the stage 100 is approximately three times that of the conventional technology. Therefore, the adhesion strength of the stage 100 is greater than that of the stage according to the conventional technology, demonstrating an improvement in the adhesion strength of the stage 100.

[0040]

[0041] As described above, the stage 100 has a configuration in which the first insulating film 120 and the second insulating film 130 containing polybenzimidazole are laminated in this order on the base material 110. As a result, the stage 100 has a configuration in which the base material 110 is covered with a laminated film that has excellent adhesion between the first insulating film 120 and the second insulating film. This improves the insulation properties, voltage resistance characteristics, and corrosion resistance of the stage 100, and makes it possible to suppress a decrease in the long-term reliability of the stage 100.

[0042] [1-3. Fabrication of Stage 100] A method for fabricating the stage 100 will be described with reference to Figures 5 and 6. Figure 5 is a flowchart showing the method for fabricating the stage 100. Figure 6 is a schematic diagram for explaining the method for fabricating the stage 100. Configurations that are the same as or similar to those in Figures 1 to 4 will be described as necessary.

[0043] For example, the method for manufacturing the stage 100 includes step 110 (S110), step 120 (S120), and step 130 (S130). As explained in "1-2," the method for manufacturing the stage 100 does not include performing a sealing process.

[0044] ​When fabrication of the stage 100 begins, the first insulating film 120 is formed on the prepared substrate 110 (step 110). As described in "1-1," the material of the substrate 110 is, for example, an aluminum substrate. For example, the aluminum substrate is anodized using an anodization method, and aluminum oxide, which is the first insulating film 120, is formed on the aluminum substrate. For example, from the viewpoint of improving the withstand voltage, the thickness T2 of the first insulating film 120 may be 5 μm or more and 100 μm or less, and preferably 10 μm or more and 50 μm or less. The anodization method can form the first insulating film 120 on the substrate 110 more cheaply than other processing methods. Note that the method for forming the first insulating film 120 is not limited to anodization. For example, the method for forming the first insulating film 120 may be a thermal spraying method.

[0045] Next, step 120 includes heating (heat treatment) the substrate 110. For example, to heat the substrate 110, a mounting table (not shown) on which the substrate 110 is placed may be heated.

[0046] Next, the second insulating film 130 is formed on the first insulating film 120 (step 130 (S130)). Specifically, the spraying device 180 sprays the resin material 182 onto the first insulating film 120 (spraying process), thereby forming the second insulating film 130 on the first surface 122 of the first insulating film 120, in the cracks 125c-1 to 125c-3, and in the plurality of holes 140. The spraying device 180 moves above the substrate 110 along the first surface 122.

[0047] As described in "1-1," for example, the second insulating film 130 contains polybenzimidazole, and the resin material 182 contains polybenzimidazole. Polybenzimidazole is a viscous material, and the aluminum oxide contained in the first insulating film 120 is solid. For example, from the viewpoint of voltage resistance and adhesion, the thickness T3 of the second insulating film 130 may be 0.1 μm or more and 100 μm or less, and preferably 1 μm or more and 50 μm or less.

[0048] For example, step 130 may include a thermal spraying process in which a spraying device 180 sprays a resin material 182 dissolved in a solvent onto the first insulating film 120 to form the second insulating film 130 on the first insulating film 120. For example, the state in which the resin material 182 is dissolved in a solvent is sometimes referred to as a varnish state. Because the viscosity of the resin material 182 dissolved in a solvent is lower than the viscosity of the resin material 182 itself, the second insulating film 130 not only easily comes into contact with the cracks 125c-1 to 125c-3 and easily fills (fills) the cracks (gaps), but also easily comes into contact with the sidewalls 142 and bottoms 144 of the multiple holes 140 and easily enters the holes 140.

[0049] Furthermore, for example, in step 130, depending on the shape of the substrate 110, the second insulating film 130 may be formed by applying it to the first insulating film 120 using electrodeposition (electrodeposition coating), spin coating, dip coating, or the like, or the second insulating film 130 may be formed by directly applying it to the first insulating film 120 using a brush or roller. For example, electrodeposition (electrodeposition coating), spin coating, dip coating, brushing, rollers, and the like are well known methods and apparatuses for applying a resin material. Furthermore, for example, in the above-described method of applying a resin material, the gas inside the apparatus for applying the resin material may be evacuated using an exhaust device including a vacuum pump, thereby allowing the second insulating film 130 to be applied to the first insulating film 120 while expelling the gas (e.g., air) that has entered the multiple holes 140. As a result, the second insulating film 130 can easily contact the cracks 125c-1 to 125c-3 and fill the cracks (gaps), and can also contact the sidewalls 142 or bottoms 144 of the multiple holes 140. In other words, for example, the intrusion portions 136 can contact the sidewalls 142 or bottoms 144. Furthermore, by using this method and apparatus, the second insulating film 130 can be applied and formed relatively easily on the first insulating film 120. For example, by using this method and apparatus, the time required to form the second insulating film 130 can be shortened.

[0050] Note that step 130 includes step 120, and step 130 and step 120 may be one step.

[0051] In this manner, the stage 100 is fabricated, and the fabrication of the stage 100 is completed.

[0052] As described above, the method for manufacturing the stage 100 does not include performing a sealing process, but includes forming the second insulating film 130 on the first surface 122 of the first insulating film 120, the cracks 125c-1 to 125c-3, and the sidewalls 142 or bottoms 144 of the plurality of holes 140. In other words, by using the method for manufacturing the stage 100, the stage 100 includes not only the first surface 122 and the cracks (gaps) 125c-1 to 125c-3 of the first insulating film 120, but also the second insulating film 130 (intrusion portions 136) that infiltrates into the plurality of holes 140, where it was difficult to form an insulating film using conventional technology, and is formed along the sidewalls 142 or bottoms 144 of the plurality of holes 140 and buried (filled).

[0053] As a result, the stage 100 can cover and fill (fill) not only the cracks (gaps) but also the sidewalls 142 or bottoms 144 of the holes 140 with the second insulating film 130 (penetration portions 136), and therefore has higher adhesion, insulation properties, high voltage resistance, and corrosion resistance than stages of conventional technology. Therefore, the stage 100 can suppress a decrease in long-term reliability.

[0054] Furthermore, the substrate 110 or the first insulating film 120 may be surface-treated by plasma treatment. When the first insulating film 120 is formed on a plasma-treated substrate 110, the uniformity of the first insulating film 120 is improved. As a result, the insulating properties and corrosion resistance of the stage 100 are improved.

[0055] The first insulating film 120 may also be polished by blasting. By polishing the first insulating film 120, the first insulating film 120 is planarized.

[0056] [2. Second Embodiment] The configuration of a semiconductor manufacturing apparatus according to a second embodiment of the present invention will be described with reference to FIG. 7. The semiconductor manufacturing apparatus includes a stage 100. For example, the semiconductor manufacturing apparatus is a film processing apparatus 300. The film processing apparatus 300 is a so-called CVD apparatus. Note that the configuration of the film processing apparatus 300 described with reference to FIG. 7 is one example, and the configuration of the film processing apparatus 300 is not limited to the configuration shown in FIG. 7. Furthermore, the film processing apparatus 300 is not limited to a CVD apparatus. In the description of the film processing apparatus 300, configurations that are the same as or similar to the configurations described with reference to FIGS. 1 to 6 will be described as necessary.

[0057] 7 is a schematic cross-sectional view of a film processing apparatus 300. The film processing apparatus 300 chemically reacts a reactive gas and can chemically form various films on a substrate. The film processing apparatus 300 includes a chamber 302. The chamber 302 provides a space in which the reactive gas is chemically reacted and various films are chemically formed on a substrate.

[0058] An exhaust device 304 is connected to the chamber 302. For example, the exhaust device 304 can reduce the pressure inside the chamber 302. An inlet pipe 306 is provided in the chamber 302. The inlet pipe 306 can introduce a reaction gas into the chamber 302 via a valve 308. Various gases can be used as the reaction gas depending on the film to be formed. The reaction gas may also be a liquid at room temperature. For example, the reaction gas may be silane, dichlorosilane, tetraethoxysilane, tungsten fluoride, trimethylaluminum, or the like. By using silane, dichlorosilane, tetraethoxysilane, or the like, a thin film of silicon, silicon oxide, silicon nitride, or the like is formed on a substrate. By using tungsten fluoride, trimethylaluminum, or the like, a thin metal or metal oxide thin film of tungsten, aluminum, aluminum oxide, or the like is formed on a substrate.

[0059] A microwave source 312 is provided above the chamber 302 via a waveguide 310. The microwave source 312 includes an antenna for supplying microwaves. The microwaves generated by the microwave source 312 are introduced into the chamber 302 via the waveguide 310. The reactive gas is converted into plasma by the microwaves, a chemical reaction of the gas is promoted by various active species contained in the plasma, and a product obtained by the chemical reaction is deposited on a substrate, forming a thin film on the substrate.

[0060] As an optional configuration, a magnet 344 may be provided inside the chamber 302. The magnet 344 can increase the density of the plasma. Magnets 316 and 318 may also be provided on the side of the chamber 302. The magnets 316 and 318 may be permanent magnets or electromagnets having electromagnetic coils.

[0061] A stage 100 for placing a substrate thereon is provided at the bottom of the chamber 302, and a thin film can be formed on the substrate with the substrate placed on the stage 100. As an optional configuration, a power supply 324 may be connected to the stage 100. The power supply 324 can apply a voltage equivalent to high-frequency power to the stage 100.

[0062] For example, if the stage 100 is equipped with a sheathed heater (not shown), a heater power supply 330 that controls the sheathed heater is connected to the stage 100. As an optional configuration, a power supply 326 for an electrostatic chuck that secures the substrate to the stage 100, a temperature controller 328 that controls the temperature of a medium circulated inside the stage 100 (groove 104), and a rotation control device (not shown) that rotates the stage 100 about the rotation axis 106 may be connected to the stage 100. For example, by using the sheathed heater, the heater power supply 330, and the temperature controller 328, it is possible to control the temperature of the stage 100 and the temperature of a substrate placed on the stage 100.

[0063] The film processing apparatus 300 according to the second embodiment includes a stage 100. As a result, the film processing apparatus 300 can uniformly heat the substrate and precisely control the heating temperature. The stage 100 has excellent insulating properties, which improves the withstand voltage of the film processing apparatus 300 against the voltage applied to the substrate. Furthermore, the film processing apparatus 300, which includes the stage 100 that has excellent corrosion resistance, insulating properties, withstand voltage performance, and adhesion between the protective film and the insulating film, has excellent long-term reliability, allowing the user to reduce the frequency of maintenance of the film processing apparatus 300.

[0064] Although an example in which the first insulating film 120 and the second insulating film 130 are provided on the substrate 110 included in the stage 100 of a semiconductor manufacturing apparatus has been described as an embodiment of the present invention, the embodiment of the present invention is not limited to semiconductor manufacturing apparatuses. For example, the substrate 110 on which the first insulating film 120 and the second insulating film 130 are provided may be a member used in the aerospace field, or a member used in the automotive field, and the first insulating film 120 and the second insulating film 130 may be applied to applications including a member provided on the substrate 110 containing aluminum.

[0065] The components of the members, stages, stage manufacturing methods, and semiconductor manufacturing apparatuses described above as embodiments of the present invention can be combined as appropriate as long as they are not mutually inconsistent. Furthermore, the components of the members, stages, stage manufacturing methods, and semiconductor manufacturing apparatuses described above as embodiments of the present invention can be interchanged as appropriate as long as they are not mutually inconsistent. Furthermore, even if a person skilled in the art adds, deletes, or modifies components as appropriate based on each embodiment, these additions, deletions, or design changes are included within the scope of the present invention as long as they maintain the gist of the present invention.

[0066] Furthermore, even if there are other effects and advantages different from those brought about by the above-mentioned embodiments, those that are clear from the description in this specification or that can be easily predicted by a person skilled in the art are naturally understood to be brought about by the present invention.

[0067] 100: stage, 102: hole, 104: groove portion, 106: rotation axis, 110: substrate, 112: first surface, 114: second surface, 120: first insulating film, 122: first surface, 124: second surface, 125c-1: crack, 125c-2: crack, 125c-3: crack, 130: second insulating film, 132: first surface, 134: second surface, 136: penetration portion, 140: hole, 142 : Side wall, 144: Bottom, 150: Hydrous oxide, 180: Spraying device, 182: Resin material, 200: Area, 300: Film processing device, 302: Chamber, 304: Exhaust device, 306: Inlet pipe, 308: Valve, 310: Waveguide, 312: Microwave source, 316: Magnet, 318: Magnet, 324: Power supply, 326: Power supply, 328: Temperature controller, 330: Heater power supply, 344: Magnet

Claims

1. A stage for placing a substrate, comprising: a base having a first surface and a second surface opposite the first surface; a first insulating film disposed on the base, the first insulating film including a third surface, a fourth surface in contact with the first surface and opposite the third surface, and a plurality of holes provided on the third surface side; and a second insulating film disposed on the first insulating film, the second insulating film including a fifth surface, a sixth surface in contact with the third surface and opposite the fifth surface, and intrusion portions in contact with side walls of the plurality of holes and extending into the plurality of holes.

2. The stage according to claim 1, wherein the second insulating film includes a resin material.

3. The stage of claim 2, wherein the resin material comprises polybenzimidazole.

4. The stage of claim 1, wherein the substrate and the first insulating film comprise aluminum.

5. The stage of claim 1, wherein the first insulating film includes a crack, and the second insulating film contacts the crack.

6. The stage of claim 1, wherein the hole includes a bottom, and the penetration is spaced apart from the bottom.

7. The stage of claim 1, wherein the stage further includes a space in which a heat source can be placed.

8. A method for manufacturing a stage for supporting a substrate, comprising: using a base material having a first surface and a second surface opposite to the first surface; forming a first insulating film on the first surface, the first insulating film including a third surface, a fourth surface opposite to the third surface, and a plurality of holes provided on the third surface side; and forming a second insulating film in contact with the third surface and side walls of the plurality of holes and including intrusion portions that intrude into the plurality of holes.

9. The method for manufacturing a stage according to claim 8, wherein forming the second insulating film includes spraying a resin material onto the first insulating film.

10. The method for manufacturing a stage according to claim 8, wherein forming the second insulating film includes applying a resin material to the first insulating film using electrodeposition, dip coating, or spin coating.

11. The method for manufacturing a stage according to claim 8, wherein forming the second insulating film includes applying a resin material directly to the first insulating film using a brush or a roller.

12. The method for manufacturing a stage according to claim 9, wherein the resin material includes polybenzimidazole.

13. The method for manufacturing a stage according to claim 8, wherein the base material and the first insulating film contain aluminum.

14. The method for manufacturing a stage according to claim 8, wherein the first insulating film includes a gap, and the second insulating film contacts the gap.

15. The method for manufacturing a stage according to claim 8, wherein the holes include bottoms, and the penetration portions contacting the side walls of the plurality of holes are spaced apart from the bottoms.

16. The method for manufacturing a stage according to claim 8, wherein the stage further includes a space in which a heat source can be placed.

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