Sputtering device

Abstract

A sputtering device (100) is provided with: a substrate placement unit (11) on which a substrate (1) is placed; a target placement unit (21) on which a target (2) facing the substrate placement unit (11) is placed; a shutter (41) that is provided between the substrate placement unit (11) and the target (2) and that is driven to open or shield the target (2) with respect to the substrate placement unit (11); and a deposition member (50) that is provided between the target (2) and the shutter (41) and is detachably attached to the shutter (41).

Description

Sputtering Equipment

[0001] The present invention relates to a sputtering apparatus, and more particularly to a sputtering apparatus equipped with a target and a shutter.

[0002] A sputtering apparatus including a target and a shutter has been known in the art, and is disclosed in, for example, Japanese Patent Application Laid-Open No. 2009-68075.

[0003] The above-mentioned Japanese Patent Application Laid-Open No. 2009-68075 discloses a sputtering apparatus (sputtering apparatus) including a target that generates sputter particles and a shutter plate that shields the target. In this sputtering apparatus, pre-sputtering is performed before the main sputtering in order to clean the surface of the target. The pre-sputtering is performed with the target shielded by the shutter plate. Therefore, sputter particles generated from the target during pre-sputtering are deposited on the shutter plate.

[0004] JP 2009-68075 A

[0005] In the sputtering apparatus described in JP 2009-68075 A, sputter particles accumulate on the shutter plate as pre-sputtering is repeated. In this case, the sputter particles accumulated on the shutter plate may adversely affect the actual sputtering. For example, some of the sputter particles accumulated on the shutter plate may peel off and become foreign matter, adversely affecting the actual sputtering. Therefore, when a certain amount of sputter particles accumulates on the shutter plate, an operator performs maintenance. During maintenance, the operator removes the shutter plate from the sputtering apparatus, cleans it, and then reattaches it to the sputtering apparatus. However, when performing such work, there is a problem in that, when attaching the shutter plate to the sputtering apparatus after cleaning, it requires the operator's labor and maintenance time to assemble and adjust the shutter plate to the drive mechanism for opening and closing the shutter plate.

[0006] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide a sputtering apparatus that can reduce the labor required by workers and the maintenance time.

[0007] In order to achieve the above object, a sputtering apparatus according to one aspect of the present invention comprises a substrate placement section for placing a substrate, a target placement section for placing a target facing the substrate placement section, a shutter provided between the substrate placement section and the target and driven to shield or open the target from the substrate placement section, and a deposition member provided between the target and the shutter and removably attached to the shutter.

[0008] In one aspect of the present invention, a sputtering apparatus includes a deposition member disposed between the target and the shutter and removably attached to the shutter. This allows sputter particles generated from the target during pre-sputtering to be deposited on the deposition member, reduces the deposition of sputter particles on the shutter, and allows the deposition member on which the sputter particles have accumulated to be easily removed. This reduces the frequency with which an operator must remove the shutter from the sputtering apparatus, clean the shutter, and then reattach it to the sputtering apparatus. As a result, when attaching the shutter to the sputtering apparatus after cleaning, the frequency of assembling and adjusting the drive mechanism for opening and closing the shutter can be reduced, thereby reducing the operator's effort and maintenance time.

[0009] In the sputtering apparatus according to the above aspect, a first cylindrical portion having an inner circumference larger than the outer circumference of the target surface of the target is preferably provided between the shutter and the target, and when the shutter shields the target from the substrate placement portion, a closed space is formed by the target, the shutter, and the first cylindrical portion. With this configuration, pre-sputtering can be performed in the closed space, thereby enabling stable pre-sputtering.

[0010] In this case, preferably, the shutter includes a first bottom surface portion facing the target, and the first cylindrical portion extends from the first bottom surface portion toward the target. With this configuration, a closed space can be easily formed by the target, the shutter, and the first cylindrical portion extending from the first bottom surface portion toward the target.

[0011] In the above-described configuration in which the first cylindrical portion is provided, the target placement portion preferably further includes a shield provided to surround the outer periphery of the target surface of the target, the shutter includes a first bottom surface portion facing the target, and the first cylindrical portion extends from the shield toward the first bottom surface portion. With this configuration, a closed space can be easily formed by the target, the shutter, and the first cylindrical portion extending from the shield toward the first bottom surface portion.

[0012] In the configuration in which the shutter includes the first bottom surface portion, the deposition member is preferably provided on the first bottom surface portion and inside the first cylindrical portion. With this configuration, the sputtered particles can be deposited on the deposition member on the first bottom surface portion and inside the first cylindrical portion, so that the sputtered particles can be effectively deposited on the deposition member.

[0013] In this case, the deposition member preferably includes a second bottom surface portion facing the target and a second cylindrical portion extending from the second bottom surface portion toward the target and having an inner circumference larger than the outer circumference of the target surface of the target. With this configuration, sputtered particles can be deposited on the second bottom surface portion and the second cylindrical portion, allowing the sputtered particles to be easily and effectively deposited on the deposition member on the first bottom surface portion and inside the first cylindrical portion. In other words, deposition of sputtered particles on the shutter can be easily and effectively reduced.

[0014] In the above-described configuration in which the deposition member includes a second bottom surface portion and a second cylindrical portion, the deposition member preferably further includes a third cylindrical portion having an inner circumference larger than the outer circumference of the target surface of the target. When the shutter shields the target from the substrate placement portion, the first cylindrical portion, the second cylindrical portion, and the third cylindrical portion form a labyrinth structure. This configuration can prevent sputtered particles generated from the target during pre-sputtering from escaping to the closed space. As a result, sputtered particles generated from the target during pre-sputtering can be prevented from adversely affecting the outside of the closed space. Furthermore, when multiple targets are provided, the labyrinth structure can prevent sputtered particles and reactive gases generated by the main sputtering of other targets from entering the closed space. As a result, sputtered particles and reactive gases generated from other targets can be prevented from entering the closed space and adversely affecting the targets placed in the closed space.

[0015] In the configuration in which the deposition member includes the second bottom surface portion and the second cylindrical portion, the outer periphery of the second bottom surface portion is preferably larger than the outer periphery of the second cylindrical portion, which makes it possible to easily ensure a clearance (gap) for forming a labyrinth structure from the first cylindrical portion, the second cylindrical portion, and the third cylindrical portion.

[0016] In the above-described configuration in which a closed space is formed, the shutter preferably further includes a gas inlet portion that, when shielding the target from the substrate placement portion, introduces a pressure-adjusting gas into the closed space to increase the pressure in the closed space above the pressure outside the closed space. This configuration increases the pressure inside the closed space, making it easier to generate plasma during pre-sputtering. As a result, stable pre-sputtering can be performed. Furthermore, when multiple targets are provided, increasing the pressure in the closed space above the pressure outside the closed space can prevent sputter particles and reactive gases generated during the main sputtering of other targets from entering the closed space. As a result, adverse effects on the targets placed in the closed space due to the intrusion of sputter particles and reactive gases generated from other targets into the closed space can be prevented.

[0017] In the sputtering apparatus according to the above aspect, the shutter and the deposition member are preferably made of different materials, and the deposition member is made of a material having a linear expansion coefficient closer to that of the target material than that of the shutter material. With this configuration, the linear expansion coefficients of the target and the deposition member are relatively close, which makes it easier for sputtered particles to adhere to the deposition member and less likely to peel off. As a result, it is possible to prevent sputtered particles deposited on the deposition member from peeling off due to temperature fluctuations of the deposition member, which would adversely affect the sputtering.

[0018] In the sputtering apparatus according to the above aspect, preferably, a plurality of targets are provided. With this configuration, main sputtering can be performed using sputter particles of a plurality of materials, thereby improving the degree of freedom of sputtering.

[0019] According to the present invention, as described above, it is possible to reduce the labor and maintenance time required by workers.

[0020] FIG. 1 is a schematic diagram showing a sputtering apparatus according to an embodiment; FIG. 2 is a schematic cross-sectional view showing a state in which a shutter according to an embodiment shields a target; FIG. 3 is a schematic perspective view showing a shutter and a deposition member according to an embodiment; FIG. 4 is a schematic perspective view showing a shield according to an embodiment; FIG. 5 is a schematic diagram for explaining a target shielding operation by a shutter according to an embodiment; FIG. 6 is a schematic cross-sectional view showing a state in which a shutter according to a first modified example of an embodiment shields a target; FIG. 7 is a schematic cross-sectional view showing a state in which a shutter according to a second modified example of an embodiment shields a target; FIG. 8 is a schematic cross-sectional view showing a state in which a shutter according to a third modified example of an embodiment shields a target.

[0021] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0022] (Configuration of Sputtering Apparatus) The configuration of a sputtering apparatus 100 according to one embodiment of the present invention will be described with reference to FIG.

[0023] 1, a sputtering apparatus 100 is an apparatus for forming a thin film on a substrate 1 by sputtering a target 2. The substrate 1 is, for example, a wafer. The sputtering apparatus 100 performs pre-sputtering for cleaning the target 2 and main sputtering for forming a thin film on the substrate 1.

[0024] The sputtering apparatus 100 includes a substrate placement section 11 and a heater 12. The substrate placement section 11 places the substrate 1. The substrate placement section 11 is a support section that supports the substrate 1. The heater 12 is provided on the opposite side of the substrate 1 from the thin film formation surface 1a, and heats the substrate 1 placed on the substrate placement section 11.

[0025] The sputtering apparatus 100 includes a target placement unit 21, a magnet 22, a radio-frequency matching box 23, and an RF power supply 24. The target placement unit 21 places the target 2 facing the substrate placement unit 11. The target placement unit 21 is a support unit that supports the target 2. An opening 21a of the target placement unit 21 exposes a target surface 2a of the target 2, from which sputter particles are generated. The magnet 22 is provided on the opposite side of the target surface 2a of the target 2, and generates a magnetic field that promotes the generation of sputter particles from the target 2 near the target 2 placed on the target placement unit 21. The radio-frequency matching box 23 is provided between the RF power supply 24 and the target 2, and matches impedance when radio-frequency power is supplied from the RF power supply 24 to the target 2. The RF power supply 24 supplies radio-frequency power, which generates sputter particles from the target 2, to the target 2 via the radio-frequency matching box 23.

[0026] A plurality of targets 2 are provided. The plurality of targets 2 are made of different materials. A plurality of target placement units 21 and magnets 22 are provided to correspond to the plurality of targets 2. One high-frequency matching box 23 and one RF power supply 24 are provided for each of the plurality of targets 2.

[0027] The sputtering apparatus 100 includes a vacuum chamber 31 and an exhaust pump 32. The interior of the vacuum chamber 31 is depressurized to a vacuum (for example, 0.001 Pa or less). A substrate 1, a target 2, and the like are disposed inside the vacuum chamber 31. A pressure gauge 31a for measuring the pressure inside the vacuum chamber 31 is also connected to the interior of the vacuum chamber 31. The exhaust pump 32 is connected to the interior of the vacuum chamber 31 and exhausts gas from the interior of the vacuum chamber 31, thereby depressurizing the interior of the vacuum chamber 31 to a vacuum.

[0028] The sputtering apparatus 100 forms a thin film on the substrate 1 as follows. First, the sputtering apparatus 100 depressurizes the interior of the vacuum chamber 31 to a vacuum using the exhaust pump 32. Then, the sputtering apparatus 100 introduces an inert gas (such as argon) into the vacuum chamber 31. If necessary, the sputtering apparatus 100 also introduces a reactive gas such as oxygen into the vacuum chamber 31. The sputtering apparatus 100 then supplies high-frequency power to the target 2 using the RF power supply 24 to generate plasma within the vacuum chamber 31. The sputtering apparatus 100 then causes inert gas ions in the generated plasma to collide with the target surface 2 a of the target 2, thereby generating sputtered particles from the target surface 2 a of the target 2. The sputtering apparatus 100 then deposits the generated sputtered particles on the thin film formation surface 1 a of the substrate 1, thereby forming a thin film on the substrate 1 that corresponds to the material of the target 2.

[0029] <Configuration Related to Shutter> As shown in Fig. 1, the sputtering apparatus 100 includes a shutter 41 and a shutter drive mechanism 42. Note that, although Fig. 1 illustrates the shutter 41 and shutter drive mechanism 42 for one target 2, a shutter 41 and a shutter drive mechanism 42 are provided for each of a plurality of targets 2.

[0030] The shutter 41 is provided between the substrate placement part 11 and the target 2, and is driven to block or open the target 2 relative to the substrate placement part 11. The shutter drive mechanism 42 drives the shutter 41 to block or open the target 2 relative to the substrate placement part 11. The shutter drive mechanism 42 includes an actuator such as a motor or an air cylinder, and moves the shutter 41 in the vertical direction and in a rotational direction about a rotation axis extending in the vertical direction.

[0031] In this embodiment, as shown in FIG. 2 , the sputtering apparatus 100 includes a deposition member 50. The deposition member 50 is provided between the target 2 and the shutter 41 and is removably attached to the shutter 41. Specifically, the deposition member 50 is placed on the shutter 41 without being fixed thereto. Sputtered particles are deposited on the deposition member 50 during pre-sputtering. The deposition member 50 is a disposable member that is removed from the shutter 41 and discarded when a certain amount of sputtered particles has accumulated. The deposition member 50 on which a certain amount of sputtered particles has accumulated is replaced with a new deposition member 50. The deposition member 50 may be regenerated and reused instead of being discarded.

[0032] In this embodiment, a cylindrical portion 41b (60b) having an inner circumference larger than the outer circumference of the target surface 2a of the target 2 is provided between the shutter 41 and the target 2. When the shutter 41 shields the target 2 from the substrate placement unit 11, the target 2, the shutter 41, and the cylindrical portions 41b (60b) form a closed space SC. The cylindrical portion 41b has an inner diameter D2 larger than the outer diameter D1 of the target surface 2a. The cylindrical portion 60b has an inner diameter D3 larger than the outer diameter D1 of the target surface 2a but smaller than the inner diameter D2 of the cylindrical portion 41b. A pressure gauge 43 (see FIG. 1) for measuring the pressure of the closed space SC is connected to the closed space SC. The cylindrical portion 41b is an example of the "first cylindrical portion" and the "third cylindrical portion" in the claims. The cylindrical portion 60b is an example of the "first cylindrical portion" and the "third cylindrical portion" in the claims.

[0033] As shown in FIGS. 2 and 3 , the shutter 41 has a concave shape recessed on the side opposite to the target 2. Specifically, the shutter 41 includes a bottom surface portion 41a and a tubular portion 41b. The bottom surface portion 41a faces the target 2. The bottom surface portion 41a has a plate shape. The tubular portion 41b extends from the bottom surface portion 41a toward the target 2. The tubular portion 41b has a cylindrical shape. The shutter 41 also includes a connecting portion 41c. The connecting portion 41c is provided so as to extend continuously from the bottom surface portion 41a outside the tubular portion 41b. The connecting portion 41c is connected to a shaft portion 42a of the shutter driving mechanism 42, which connects the shutter 41 and the shutter driving mechanism 42. The bottom surface portion 41a is an example of a "first bottom surface portion" in the claims.

[0034] The shutter 41 is also subjected to a surface treatment so that sputter particles generated from other targets 2 (for example, sputter particles generated from the target 2 on the left side of FIG. 1 for the shutter 41 on the right side of FIG. 1) adhere easily to the shutter 41 but are difficult to peel off. The surface treatment is a treatment that roughens the surface of the shutter 41. By roughening the surface of the shutter 41, sputter particles adhere easily to the shutter 41 but are difficult to peel off. The surface treatment is, for example, a blasting treatment.

[0035] In this embodiment, as shown in FIGS. 2 and 3 , the sputtering apparatus 100 includes a shield 60. The shield 60 is provided on the target placement section 21 so as to surround the outer periphery of the target surface 2a of the target 2. The shield 60 includes a flange portion 60a and a cylindrical portion 60b. The flange portion 60a is attached to the target placement section 21. Specifically, the flange portion 60a is fixed to the target placement section 21 by a fastening member such as a screw. The flange portion 60a has a flange shape extending outward from the cylindrical portion 60b. The cylindrical portion 60b extends from the flange portion 60a of the shield 60 toward the bottom surface portion 41a. The cylindrical portion 60b has a cylindrical shape.

[0036] In this embodiment, as shown in FIGS. 2 and 3 , the deposition member 50 is provided on the bottom surface 41 a and inside the cylindrical portions 41 b and 60 b. The deposition member 50 has a concave shape recessed on the side opposite the target 2. Specifically, the deposition member 50 includes a bottom surface 50 a and a cylindrical portion 50 b. The bottom surface 50 a faces the target 2. The bottom surface 50 a has a plate shape. The cylindrical portion 50 b extends from the bottom surface 50 a toward the target 2 and has a cylindrical shape with an inner circumference larger than the outer circumference of the target surface 2 a of the target 2. The cylindrical portion 50 b has a cylindrical shape. The cylindrical portion 50 b has an inner diameter D4 that is larger than the outer diameter D1 of the target surface 2 a and smaller than the inner diameter D2 of the cylindrical portion 41 b and the inner diameter D3 of the cylindrical portion 60 b. The bottom surface portion 50a is an example of a "second bottom surface portion" in the claims. The cylindrical portion 50b is an example of a "second cylindrical portion" in the claims.

[0037] In this embodiment, the outer periphery of the bottom surface portion 50a is larger than the outer periphery of the cylindrical portion 50b. The bottom surface portion 50a has a flange portion 50c at a portion outside the cylindrical portion 50b. The flange portion 50c has a flange shape that extends outward from the cylindrical portion 50b. The flange portion 50c has an outer diameter that is approximately the same as the inner diameter D2 of the cylindrical portion 41b. The flange portion 50c abuts against the inner periphery of the cylindrical portion 41b and functions as a positioning portion that positions the deposition member 50 relative to the shutter 41.

[0038] Furthermore, the deposition member 50 has a smaller thickness than the shutter 41. Specifically, the bottom surface 50a of the deposition member 50 has a smaller thickness than the bottom surface 41a of the shutter 41. Furthermore, the cylindrical portion 50b of the deposition member 50 has a smaller thickness than the cylindrical portion 41b of the shutter 41.

[0039] In this embodiment, when the shutter 41 shields the target 2 from the substrate placement unit 11, the cylindrical portions 41b, 50b, and 60b form a labyrinth structure. Specifically, the cylindrical portions 41b, 50b, and 60b form a zigzag path to form the labyrinth structure. The cylindrical portion 60b is disposed inside the cylindrical portion 41b and outside the cylindrical portion 50b, without contacting the cylindrical portions 41b and 50b. The gap between the cylindrical portions 41b and 60b is smaller than the gap between the cylindrical portions 60b and 50b. That is, the gap between the cylindrical portions is small in the shutter 41 and the shield 60, both of which are assembled with relatively high precision, and the gap between the cylindrical portions is large in the shield 60, which is assembled with relatively high precision, and the deposition member 50, which is not assembled with relatively high precision. Each gap is, for example, about 0.5 to 2 mm.

[0040] In this embodiment, the sputtering apparatus 100 includes a gas introduction unit 70 that introduces a pressure adjustment gas into the closed space SC when the shutter 41 shields the target 2 from the substrate placement unit 11, thereby increasing the pressure in the closed space SC above the pressure outside the closed space SC (the pressure inside the vacuum chamber 31). The gas introduction unit 70 is a hole connected to the closed space SC. The gas introduction unit 70 introduces the pressure adjustment gas supplied from a gas source into the closed space SC. The pressure adjustment gas is an inert gas (such as argon). The gas introduction unit 70 introduces the pressure adjustment gas into the closed space SC to adjust the pressure in the closed space SC to a predetermined pressure (several Pas to several tens of Pas) higher than the pressure outside the closed space SC. Specifically, the gas introduction unit 70 introduces the pressure adjustment gas into the closed space SC until the pressure in the closed space SC measured by a pressure gauge 43 (see FIG. 1 ) connected to the closed space SC reaches the predetermined pressure. Note that, if it is known that the pressure in the closed space SC will reach a predetermined pressure if a constant amount of pressure adjustment gas is introduced into the closed space SC, there is no need to provide the pressure gauge 43. In this case, the gas introduction unit 70 adjusts the pressure in the closed space SC to the predetermined pressure by introducing a constant amount of pressure adjustment gas into the closed space SC so that the pressure in the closed space SC reaches the predetermined pressure.

[0041] Furthermore, in this embodiment, the shutter 41 and the deposition member 50 are made of different materials. The material of the deposition member 50 is made of a material with a linear expansion coefficient closer to that of the material of the target 2 that faces the deposition member 50 when shielded by the shutter 41, compared to the material of the shutter 41. In other words, the material of the deposition member 50 is made of a material with a thermal expansion and thermal contraction closer to that of the material of the target 2 that faces the deposition member 50 when shielded by the shutter 41, compared to the material of the shutter 41. Because the materials of the multiple targets 2 are different from one another, the deposition members 50 for each of the multiple targets 2 may be made of different materials from one another.

[0042] (Operation of the Shutter) The operation of the shutter 41 will be described with reference to FIG.

[0043] 5, when pre-sputtering is performed, the shutter 41 is moved by the shutter drive mechanism 42 from a position that exposes the target 2 to the substrate placement part 11 to a position that shields the target 2 from the substrate placement part 11. Specifically, first, the shutter 41 is moved by the shutter drive mechanism 42 from a position that does not face the target 2 to a position that faces the target 2. Then, the shutter 41 is moved upward by the shutter drive mechanism 42 so as to approach the target 2. As a result, the shutter 41 shields the target 2 from the substrate placement part 11. Furthermore, the target 2, the shutter 41, and the cylindrical parts 41b and 60b form a closed space SC, and the cylindrical parts 41b, 50b, and 60b form a labyrinth structure.

[0044] The gas introduction unit 70 then introduces a pressure adjustment gas into the closed space SC, thereby increasing the pressure in the closed space SC above the pressure outside the closed space SC. Pre-sputtering is then performed. In pre-sputtering, plasma is generated in the closed space SC, causing sputter particles to be generated from the target surface 2 a of the target 2. The generated sputter particles are then deposited on the bottom surface 50 a and cylindrical portion 50 b of the deposition member 50. Furthermore, because the bottom surface 50 a and cylindrical portion 50 b of the deposition member 50 and the cylindrical portion 60 b of the shield 60 cover the bottom surface 41 a and cylindrical portion 41 b of the shutter 41, almost no sputter particles are deposited thereon.

[0045] Then, when pre-sputtering is completed, the shutter 41 is operated by the shutter drive mechanism 42 in the opposite manner to that used when pre-sputtering is performed. That is, the shutter 41 is moved from a position where it shields the target 2 from the substrate placement part 11 to a position where it opens the target 2 to the substrate placement part 11. Specifically, first, the shutter 41 is moved downward by the shutter drive mechanism 42 so as to move away from the target 2. Then, the shutter 41 is moved by the shutter drive mechanism 42 from a position facing the target 2 to a position where it does not face the target 2. As a result, the shutter 41 opens the target 2 to the substrate placement part 11.

[0046] Furthermore, the shutter 41 shields the target 2 from the substrate placement part 11 not only when pre-sputtering is performed but also when other targets 2 are subjected to main sputtering. That is, the shutter 41 is moved by the shutter drive mechanism 42 from a position not facing the target 2 to a position facing the target 2. Then, the shutter 41 is moved upward by the shutter drive mechanism 42 so as to approach the target 2. As a result, the shutter 41 shields the target 2 from the substrate placement part 11. The target 2, the shutter 41, and the cylindrical parts 41b and 60b form a closed space SC, and the cylindrical parts 41b, 50b, and 60b form a labyrinth structure.

[0047] Then, the gas introduction unit 70 introduces a pressure adjustment gas into the closed space SC, thereby increasing the pressure in the closed space SC above the pressure outside the closed space SC. Then, when the main sputtering of the other target 2 is completed, the shutter 41 is operated by the shutter drive mechanism 42 in the opposite manner to that used in pre-sputtering. That is, the shutter 41 is moved from a position that shields the target 2 from the substrate placement unit 11 to a position that opens the target 2 to the substrate placement unit 11. Specifically, first, the shutter 41 is moved downward by the shutter drive mechanism 42 so as to move away from the target 2. Then, the shutter 41 is moved by the shutter drive mechanism 42 from a position facing the target 2 to a position not facing the target 2. As a result, the shutter 41 opens the target 2 to the substrate placement unit 11.

[0048] (Effects of this embodiment) In this embodiment, the following effects can be obtained.

[0049] In this embodiment, as described above, a deposition member 50 is provided between the target 2 and the shutter 41 and removably attached to the shutter 41. This allows sputtered particles generated from the target 2 during pre-sputtering to be deposited on the deposition member 50, reduces the deposition of sputtered particles on the shutter 41, and allows the deposition member 50 on which the sputtered particles have accumulated to be easily removed. This reduces the frequency with which an operator removes the shutter 41 from the sputtering apparatus 100, cleans the shutter 41, and then reattaches it to the sputtering apparatus 100. As a result, when attaching the shutter 41 to the sputtering apparatus 100 after cleaning, the frequency with which the shutter drive mechanism 42 for opening and closing the shutter 41 must be assembled and adjusted can be reduced, thereby reducing the operator's effort and maintenance time.

[0050] In this embodiment, as described above, cylindrical portions 41b, 60b having an inner circumference larger than the outer circumference of the target surface 2a of the target 2 are provided between the shutter 41 and the target 2, and when the shutter 41 shields the target 2 from the substrate placement unit 11, a closed space SC is formed by the target 2, the shutter 41, and the cylindrical portions 41b, 60b. This allows pre-sputtering to be performed in the closed space SC, thereby enabling stable pre-sputtering.

[0051] In this embodiment, as described above, the shutter 41 includes the bottom surface portion 41a facing the target 2, and the cylindrical portions 41b, 60b extend from the bottom surface portion 41a toward the target 2. This makes it possible to easily form the closed space SC by the target 2, the shutter 41, and the cylindrical portions 41b, 60b extending from the bottom surface portion 41a toward the target 2.

[0052] In this embodiment, as described above, the target placement section 21 is provided with the shield 60 arranged to surround the outer periphery of the target surface 2a of the target 2, the shutter 41 includes a bottom surface 41a facing the target 2, and the cylindrical portions 41b, 60b extend from the shield 60 toward the bottom surface 41a. This makes it possible to easily form a closed space SC by the target 2, the shutter 41, and the cylindrical portions 41b, 60b extending from the shield 60 toward the bottom surface 41a.

[0053] In this embodiment, as described above, deposition member 50 is provided on bottom surface portion 41 a and inside cylindrical portions 41 b, 60 b. This allows sputtered particles to be deposited on deposition member 50 on bottom surface portion 41 a and inside cylindrical portions 41 b, 60 b, so that sputtered particles can be easily and effectively deposited on deposition member 50. In other words, deposition of sputtered particles on shutter 41 can be easily and effectively reduced.

[0054] In this embodiment, as described above, deposition member 50 includes bottom surface portion 50a facing target 2, and cylindrical portion 50b extending from bottom surface portion 50a toward target 2 and having an inner circumference larger than the outer circumference of target surface 2a of target 2. This allows sputtered particles to be deposited on bottom surface portion 50a and cylindrical portion 50b, and therefore sputtered particles can be easily and effectively deposited on deposition member 50 on bottom surface portion 41a and inside cylindrical portions 41b, 60b.

[0055] In this embodiment, as described above, the shutter 41 includes a cylindrical portion 60b having an inner circumference larger than the outer circumference of the target surface 2a of the target 2. When the shutter 41 shields the target 2 from the substrate placement unit 11, the cylindrical portion 41b, the cylindrical portion 50b, and the cylindrical portion 60b form a labyrinth structure. This prevents sputter particles generated from the target 2 during pre-sputtering from escaping to the closed space SC. As a result, it is possible to prevent sputter particles generated from the target 2 during pre-sputtering from adversely affecting the outside of the closed space SC. Furthermore, when multiple targets 2 are provided, the labyrinth structure prevents sputter particles and reactive gases generated by the main sputtering of other targets 2 from entering the closed space SC. As a result, it is possible to prevent sputter particles and reactive gases generated from other targets 2 from entering the closed space SC and adversely affecting the targets 2 placed in the closed space SC.

[0056] In this embodiment, as described above, the outer periphery of the bottom surface portion 50a is larger than the outer periphery of the cylindrical portion 50b, which makes it easy to ensure clearance for forming a labyrinth structure from the cylindrical portion 41b, the cylindrical portion 50b, and the cylindrical portion 60b.

[0057] In this embodiment, as described above, when the shutter 41 shields the target 2 from the substrate placement unit 11, the shutter 41 includes the gas introduction unit 70 that introduces a pressure adjustment gas into the closed space SC to increase the pressure in the closed space SC above the pressure outside the closed space SC. This increases the pressure inside the closed space, making it easier to generate plasma during pre-sputtering. As a result, stable pre-sputtering can be performed. Furthermore, when multiple targets 2 are provided, increasing the pressure in the closed space SC above the pressure outside the closed space SC can prevent sputter particles and reactive gases generated during the main sputtering of other targets 2 from entering the closed space SC. As a result, it is possible to prevent sputter particles and reactive gases generated from other targets 2 from entering the closed space SC and adversely affecting the target 2 placed in the closed space SC.

[0058] In this embodiment, as described above, the shutter 41 and the deposition member 50 are made of different materials, and the material of the deposition member 50 is made of a material with a linear expansion coefficient closer to that of the material of the target 2 than the material of the shutter 41. As a result, since the linear expansion coefficients of the materials of the target 2 and the deposition member 50 are relatively close, sputtered particles can easily adhere to the deposition member 50 and are less likely to peel off. As a result, it is possible to prevent sputtered particles deposited on the deposition member 50 from peeling off due to a rise or fall in the temperature of the deposition member 50, which would have an adverse effect on the sputtering.

[0059] In this embodiment, as described above, a plurality of targets 2 are provided. This allows the main sputtering to be performed using sputter particles of a plurality of materials, thereby improving the degree of freedom in sputtering.

[0060] (Modifications) The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, not by the description of the above-mentioned embodiments, and includes all modifications (modifications) within the meaning and scope of the claims.

[0061] For example, in the above embodiment, the cylindrical portion 41b, the cylindrical portion 50b, and the cylindrical portion 60b form a labyrinth structure, but the present invention is not limited to this. For example, as in a first modified example shown in Fig. 6, the cylindrical portion 41b of the shutter 41 may abut against the flange portion 60a of the shield 60. Furthermore, as in a second modified example shown in Fig. 7, a seal member 180 may be provided between the cylindrical portion 41b of the shutter 41 and the flange portion 60a of the shield 60. Furthermore, as in a third modified example shown in Fig. 8, a seal member 280 may be provided between the cylindrical portion 41b of the shutter 41 and the cylindrical portion 60b of the shield 60.

[0062] In the above embodiment, the deposition member 50 is provided with the cylindrical portion 50b (second cylindrical portion), but the present invention is not limited to this. For example, the deposition member does not have to be provided with the second cylindrical portion.

[0063] In the above embodiment, the sputtering apparatus 100 is provided with the shield 60, but the present invention is not limited to this. In the present invention, the sputtering apparatus does not necessarily have to include a shield.

[0064] In the above embodiment, the outer periphery of the bottom surface portion 50a (second bottom surface portion) is larger than the outer periphery of the cylindrical portion 50b (second cylindrical portion), but the present invention is not limited to this. For example, the outer periphery of the second bottom surface portion may be the same as the outer periphery of the second cylindrical portion.

[0065] In the above embodiment, the sputtering apparatus 100 includes the gas introduction unit 70, but the present invention is not limited to this. For example, the sputtering apparatus does not need to include the gas introduction unit. Furthermore, if the sputtering apparatus includes the gas introduction unit, the gas introduction unit may be capable of supplying multiple types of gases.

[0066] In the above embodiment, the shutter 41 and the deposition member 50 are made of different materials, but the present invention is not limited to this. For example, the shutter and the deposition member may be made of the same material.

[0067] In the above embodiment, the deposition member 50 is made of a material having a linear expansion coefficient closer to that of the target 2 than that of the shutter 41, but the present invention is not limited to this. For example, the deposition member may be made of a material having a linear expansion coefficient farther from that of the target than that of the shutter, or may be made of a material having the same linear expansion coefficient as that of the shutter.

[0068] In the above embodiment, an example in which a plurality of targets 2 are provided is shown, but the present invention is not limited to this. For example, only one target may be provided.

[0069] In the above embodiment, an example has been shown in which a shutter 41 and a deposition member 50 are provided for each of the multiple targets 2, but the present invention is not limited to this. For example, if the multiple targets include a mixture of targets that require pre-sputtering and targets that do not require pre-sputtering, a shutter and a deposition member may be provided for the targets that require pre-sputtering, and a shutter and a deposition member may not be provided for the targets that do not require pre-sputtering.

[0070] In the above embodiment, the substrate placement section 11 (thin film formation surface 1 a of the substrate 1) and the target placement section 21 (target surface 2 a of the target 2) are parallel to each other, but the present invention is not limited to this. For example, the substrate placement section (thin film formation surface of the substrate) and the target placement section (target surface of the target) may be perpendicular to each other or may intersect at an angle other than a right angle.

[0071] In the above embodiment, the substrate placement section 11 is provided below and the target placement section 21 is provided above, but the present invention is not limited to this. For example, the substrate placement section may be provided above and the target placement section may be provided below. Furthermore, in cases where the thin film formation surface of the substrate and the target surface of the target are perpendicular (when the substrate placement section and the target placement section are perpendicular), the substrate placement section and the target placement section may be provided regardless of their positions above and below.

[0072] In the above embodiment, an example has been shown in which a shutter 41 and a shutter drive mechanism 42 are provided for each of the multiple targets 2, but the present invention is not limited to this. For example, a configuration may be adopted in which one shutter and one shutter drive mechanism block or open the multiple targets with respect to the substrate placement section.

[0073] Furthermore, in the above embodiment, an example was shown in which the shutter 41 is provided with the cylindrical portion 41b, but the present invention is not limited to this. For example, the shutter does not need to be provided with a cylindrical portion. In this case, a double cylindrical portion may be provided in the shield, and the double cylindrical portion of the shield and the cylindrical portion of the deposition member may form a labyrinth structure. In this case, one of the double cylindrical portions is an example of the "first cylindrical portion" in the claims, and the other is an example of the "third cylindrical portion" in the claims.

[0074] In the above embodiment, the bottom surface portion 41 a (first bottom surface portion) and the bottom surface portion 50 a (second bottom surface portion) are flat, but the present invention is not limited to this. For example, the first bottom surface portion and the second bottom surface portion may be lenticular.

[0075] In the above embodiment, the tubular portion 41b (first tubular portion or third tubular portion), the tubular portion 50b (second tubular portion), and the tubular portion 60b (first tubular portion or third tubular portion) are cylindrical, but the present invention is not limited to this. For example, the first tubular portion, the second tubular portion, and the third tubular portion may be rectangular tubular.

[0076] In the above embodiment, an example in which one board placement section 11 is provided has been shown, but the present invention is not limited to this. For example, a plurality of board placement sections may be provided.

[0077] In the above embodiment, the substrate 1 is flat, but the present invention is not limited to this. For example, the substrate does not have to be flat.

[0078] In the above embodiment, the high-frequency matching box 23 and the RF power supply 24 are provided in common for the multiple targets 2, but the present invention is not limited to this. For example, a high-frequency matching box and an RF power supply may be provided for each target.

[0079] REFERENCE SIGNS LIST 1 substrate 2 target 2a target surface 11 substrate placement section 21 target placement section 41 shutter 41a bottom surface section (first bottom surface section) 41b cylindrical section (first cylindrical section, third cylindrical section) 50 deposition member 50a bottom surface section (second bottom surface section) 50b cylindrical section (second cylindrical section) 60 shield 60b cylindrical section (first cylindrical section, third cylindrical section) 70 gas introduction section 100 sputtering apparatus SC closed space

Claims

1. A sputtering apparatus comprising: a substrate placement section for placing a substrate; a target placement section for placing a target facing the substrate placement section; a shutter provided between the substrate placement section and the target, which is driven to block or open the target from the substrate placement section; and a deposition member provided between the target and the shutter, which is removably attached to the shutter.

2. A sputtering apparatus as described in claim 1, wherein a first cylindrical portion having an inner circumference larger than the outer circumference of the target surface of the target is provided between the shutter and the target, and when the shutter shields the target from the substrate placement portion, a closed space is formed by the target, the shutter, and the first cylindrical portion.

3. A sputtering apparatus according to claim 2, wherein the shutter includes a first bottom surface portion facing the target, and the first cylindrical portion extends from the first bottom surface portion toward the target.

4. A sputtering apparatus as described in claim 2, further comprising a shield arranged in the target placement section to surround the outer periphery of the target surface of the target, the shutter including a first bottom surface portion facing the target, and the first cylindrical portion extending from the shield toward the first bottom surface portion.

5. A sputtering apparatus according to claim 3 or 4, wherein the deposition member is provided on the first bottom portion and inside the first cylindrical portion.

6. A sputtering apparatus as described in claim 5, wherein the deposition member includes a second bottom surface portion facing the target, and a second cylindrical portion extending from the second bottom surface portion toward the target and having an inner circumference larger than the outer circumference of the target surface of the target.

7. A sputtering apparatus as described in claim 6, further comprising a third cylindrical portion having an inner circumference larger than the outer circumference of the target surface of the target, wherein when the shutter shields the target from the substrate placement portion, the first cylindrical portion, the second cylindrical portion, and the third cylindrical portion form a labyrinth structure.

8. The sputtering apparatus according to claim 6, wherein the outer periphery of said second bottom portion is larger than the outer periphery of said second cylindrical portion.

9. A sputtering apparatus as described in claim 2, further comprising a gas introduction section that, when the shutter shields the target from the substrate placement section, introduces a pressure adjustment gas into the closed space, thereby making the pressure in the closed space higher than the pressure outside the closed space.

10. A sputtering apparatus as described in claim 1, wherein the shutter and the deposition member are made of different materials, and the material of the deposition member is made of a material with a linear expansion coefficient closer to that of the target material than the material of the shutter.

11. The sputtering apparatus according to claim 1, wherein a plurality of targets are provided.

Images