High-frequency module and communication device

Abstract

Provided is a high-frequency module capable of achieving both a reduction in height and a reduction in electromagnetic coupling between a first inductor and a second inductor. The high-frequency module (1) comprises a first mounting substrate (2), a second mounting substrate (3), a first inductor (41), a second inductor (43), and an electronic component (51). The first inductor (41) is disposed on a first main surface (21) of the first mounting substrate (2). The second inductor (43) is disposed on a third main surface (31) of the second mounting substrate (3). The electronic component (51) is disposed on a fourth main surface (32) of the second mounting substrate (3). The first mounting substrate (2) has an opening (23). The winding axis of the first inductor (41) crosses the thickness direction (D1) of the first mounting substrate (2). The height (H1) of the first inductor (41) is greater than the height (H2) of the second inductor (43). The electronic component (51) is positioned in the opening (23) of the first mounting substrate (2).

Description

High frequency module and communication device

[0001] The present invention relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a first inductor and a second inductor, and a communication device including the high-frequency module.

[0002] Patent Document 1 discloses a high-frequency front-end module. In the high-frequency front-end module disclosed in Patent Document 1, a multiplex module is disposed on a common substrate (mounting substrate). The common substrate has a window hole for mounting the multiplex module. The multiplex module has chip components mounted thereon and is mounted on the common substrate with the chip components oriented to fit into the window hole for mounting the multiplex module.

[0003] Japanese Patent Application Laid-Open No. 2002-57597

[0004] However, the high-frequency front-end module of Patent Document 1 is not premised on the use of tall components such as inductors. Furthermore, when the high-frequency front-end module of Patent Document 1 includes a first inductor and a second inductor, no consideration is given to reducing electromagnetic coupling between the first inductor and the second inductor.

[0005] An object of the present invention is to provide a high-frequency module and a communication device that can achieve both a low profile and a reduction in electromagnetic coupling between a first inductor and a second inductor.

[0006] A high-frequency module according to one aspect of the present invention includes a first mounting substrate, a second mounting substrate, a first inductor, a second inductor, and an electronic component. The first mounting substrate has a first main surface and a second main surface that face each other. The second mounting substrate has a third main surface and a fourth main surface that face each other. The first inductor is disposed on the first main surface of the first mounting substrate. The second inductor is disposed on the third main surface of the second mounting substrate. The electronic component is disposed on the fourth main surface of the second mounting substrate. The first mounting substrate has an opening. The opening penetrates between the first main surface and the second main surface in the thickness direction of the first mounting substrate. The winding axis of the first inductor intersects with the thickness direction of the first mounting substrate. The height of the first inductor in the thickness direction of the first mounting substrate is greater than the height of the second inductor in the thickness direction of the first mounting substrate. The second inductor or the electronic component is located in the opening of the first mounting substrate.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit, the signal processing circuit being connected to the high-frequency module.

[0008] According to a high-frequency module and a communication device according to one aspect of the present invention, it is possible to achieve both a low profile of the high-frequency module and a reduction in electromagnetic coupling between the first inductor and the second inductor.

[0009] FIG. 1 is a plan view of a high-frequency module according to a first embodiment. FIG. 2 is a cross-sectional view of the high-frequency module taken along line X1-X1. FIG. 3 is a circuit configuration diagram of a communication device including the high-frequency module according to the first embodiment. FIG. 4 is a plan view of a high-frequency module according to a modified example of the first embodiment. FIG. 5 is a plan view of a high-frequency module according to a second embodiment. FIG. 6 is a plan view of a high-frequency module according to a third embodiment. FIG. 7 is a cross-sectional view of the high-frequency module taken along line X2-X2. FIG. 8 is a cross-sectional view of a high-frequency module according to a fourth embodiment. FIG. 9 is a cross-sectional view of a high-frequency module according to a fifth embodiment. FIG. 10 is a cross-sectional view of a high-frequency module according to a modified example of the fifth embodiment. FIG. 11 is a cross-sectional view of a high-frequency module according to a sixth embodiment. FIG. 12 is a cross-sectional view of a high-frequency module according to a modified example of the sixth embodiment. FIG. 13 is a cross-sectional view of a high-frequency module according to a seventh embodiment.

[0010] Hereinafter, high-frequency modules and communication devices according to embodiments will be described with reference to the drawings. The drawings referred to in the following embodiments are all schematic diagrams, and the ratios of the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0011] (Embodiment 1) (1) High-Frequency Module As shown in FIG. 3 , the high-frequency module 1 (see FIGS. 1 and 2 ) is used in, for example, a communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. Note that the communication device 100 is not limited to a mobile phone and may be, for example, a wearable device such as a smartwatch. The high-frequency module 1 is a high-frequency module that is compatible with, for example, 4G (fourth generation mobile communication) standards, 5G (fifth generation mobile communication) standards, etc. The 4G standard is, for example, 3GPP (Third Generation Partnership Project, registered trademark) and LTE (Long Term Evolution, registered trademark) standards. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is compatible with, for example, carrier aggregation and dual connectivity.

[0012] (2) Circuit Configuration of High-Frequency Module The circuit configuration of the high-frequency module 1 according to the first embodiment will be described below with reference to FIG.

[0013] 3 , the radio-frequency module 1 according to the first embodiment includes a plurality of external connection terminals 10 and a switch 110. The radio-frequency module 1 further includes a matching circuit 121, a transmission filter 131, a matching circuit 141, and a power amplifier 151. The radio-frequency module 1 further includes a matching circuit 122, a reception filter 132, a matching circuit 142, and a low-noise amplifier 152. The plurality of external connection terminals 10 include an antenna terminal 11, a signal input terminal 12, and a signal output terminal 13.

[0014] (2.1) Power Amplifier The power amplifier 151 is an amplifier that amplifies a transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal input terminal 12. The output terminal of the power amplifier 151 is connected to the transmission filter 131 via the matching circuit 141.

[0015] (2.2) Transmit Filter The transmit filter 131 is a filter that passes a transmit signal. The transmit filter 131 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that uses surface acoustic waves. The transmit filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmit filter 131 is connected to the output terminal of the power amplifier 151 via a matching circuit 141. The output terminal of the transmit filter 131 is connected to the switch 110 via a matching circuit 121.

[0016] (2.3) Low-Noise Amplifier The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low-noise amplifier 152 is connected to the receive filter 132 via the matching circuit 142. The output terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal output terminal 13.

[0017] (2.4) Receiving Filter The receiving filter 132 is a filter that passes the received signal. The receiving filter 132 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW filter that uses surface acoustic waves. The receiving filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receiving filter 132 is connected to the switch 110 via the matching circuit 122. The output terminal of the receiving filter 132 is connected to the input terminal of the low-noise amplifier 152 via the matching circuit 142.

[0018] (2.5) Switch The switch 110 switches between the transmit filter 131 and the receive filter 132 to be connected to the antenna terminal 11. The switch 110 has a common terminal 111 and a plurality of (two in the illustrated example) selection terminals 112 and 113. The common terminal 111 is connected to the antenna terminal 11. The selection terminal 112 is connected to the transmit filter 131 via a matching circuit 121. The selection terminal 113 is connected to the receive filter 132 via a matching circuit 122.

[0019] (2.6) Matching Circuit The matching circuit 121 is a circuit for achieving impedance matching between the output terminal of the transmit filter 131 and the selection terminal 112 of the switch 110. The matching circuit 121 includes one or more inductors.

[0020] The matching circuit 122 is a circuit for achieving impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the receive filter 132. The matching circuit 122 includes one or more inductors.

[0021] The matching circuit 141 is a circuit for achieving impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmit filter 131. The matching circuit 141 includes one or more inductors.

[0022] The matching circuit 142 is a circuit for achieving impedance matching between the output terminal of the receive filter 132 and the input terminal of the low-noise amplifier 152. The matching circuit 142 includes one or more inductors.

[0023] (3) Structure of the High-Frequency Module The structure of the high-frequency module 1 according to the first embodiment will be described below with reference to the drawings.

[0024] 1 and 2, the high-frequency module 1 according to the first embodiment includes a first mounting substrate 2, a second mounting substrate 3, inductors 41 to 43, an electronic component 51, a transmitting filter 131, and a receiving filter 132. As shown in Fig. 2, the high-frequency module 1 further includes resin layers 61 and 62 and a shielding layer 7. Note that Fig. 1 is a plan view of the second main surface 22 viewed along the thickness direction of the first mounting substrate 2 (hereinafter referred to as "direction D1"), and the resin layer 62 and the shielding layer 7 are omitted.

[0025] 2, the first mounting substrate 2 has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other in the direction D1.

[0026] 1 and 2 , the first mounting substrate 2 has an opening 23. The opening 23 penetrates between the first main surface 21 and the second main surface 22 in the direction D1. The first mounting substrate 2 has a frame shape surrounding the opening 23 when viewed in a plan view from the direction D1, for example.

[0027] 2, the first mounting substrate 2 has a plurality of electrodes 211 on the first main surface 21. The plurality of electrodes 211 are arranged so as to surround the opening 23 in a plan view from direction D1. The plurality of electrodes 211 are, for example, pad electrodes.

[0028] As shown in FIG. 2 , an inductor 41 and an inductor 42 are disposed on the first main surface 21 of the first mounting substrate 2 .

[0029] As shown in FIG. 2, a plurality of external connection terminals 10 are arranged on the second main surface 22 of the first mounting substrate 2 .

[0030] The first mounting substrate 2 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in direction D1. The multiple conductive layers are formed in a predetermined pattern defined for each layer. Each of the multiple conductive layers includes one or multiple conductor portions in a plane perpendicular to direction D1. Each conductive layer is made of, for example, copper. The multiple conductive layers include a ground electrode to which a ground potential is applied. In the high-frequency module 1, multiple ground terminals and the ground electrode are electrically connected via via conductors or the like in the first mounting substrate 2. The first mounting substrate 2 is, for example, a low-temperature co-fired ceramics (LTCC) substrate. The first mounting substrate 2 is not limited to an LTCC substrate, and may be, for example, a resin multilayer substrate, a printed wiring board, or a high-temperature co-fired ceramics (HTCC) substrate.

[0031] (3.2) Second Mounting Substrate As shown in Fig. 2, the second mounting substrate 3 has a third main surface 31 and a fourth main surface 32. The third main surface 31 and the fourth main surface 32 face each other in the direction D1.

[0032] The second mounting substrate 3 is disposed on the first main surface 21 of the first mounting substrate 2. For example, as shown in FIGS. 1 and 2 , the second mounting substrate 3 is disposed so as to overlap with the opening 23 in a plan view from direction D1. More specifically, in a plan view from direction D1, an outer periphery 33 of the second mounting substrate 3 is disposed between the outer periphery of the first mounting substrate 2 and the opening 23. In the high-frequency module 1 according to the first embodiment, as shown in FIG. 2 , the first main surface 21 of the first mounting substrate 2 and the fourth main surface 32 of the second mounting substrate 3 face each other.

[0033] A transmitting filter 131 , a receiving filter 132 , and an inductor 43 are arranged on the third main surface 31 of the second mounting substrate 3 .

[0034] 1 and 2 , the second mounting substrate 3 has a plurality of electrodes 321 on the fourth main surface 32. The plurality of electrodes 321 are arranged along the outer periphery 33 of the second mounting substrate 3 in a plan view from direction D1. The plurality of electrodes 321 are, for example, pad electrodes. The plurality of electrodes 321 are connected to the plurality of electrodes 211 of the first mounting substrate 2 in a one-to-one relationship. The plurality of electrodes 321 and the plurality of electrodes 211 are connected by, for example, a plurality of solders 34.

[0035] An electronic component 51 is disposed on the fourth main surface 32 of the second mounting substrate 3 .

[0036] The second mounting substrate 3 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in direction D1. The multiple conductive layers are formed in a predetermined pattern determined for each layer. Each of the multiple conductive layers includes one or multiple conductor portions in a plane perpendicular to direction D1. The material of each conductive layer is, for example, copper. The second mounting substrate 3 is, for example, a low temperature co-fired ceramics (LTCC) substrate. The second mounting substrate 3 is not limited to an LTCC substrate, and may be, for example, a resin multilayer substrate, a printed wiring board, or a high temperature co-fired ceramics (HTCC) substrate.

[0037] (3.3) Inductors As shown in Fig. 2, the inductors 41 and 42 are disposed on the first main surface 21 of the first mounting substrate 2. Each of the inductors 41 and 42 corresponds to the first inductor of the present disclosure. Each of the inductors 41 and 42 is, for example, a surface-mount chip inductor.

[0038] The inductor 41 and the inductor 42 are included in, for example, a matching circuit 142 (see FIG. 3).

[0039] The winding axes of the inductors 41 and 42 intersect with the direction D1. More specifically, the winding axes of the inductors 41 and 42 are parallel to a direction D2 that is perpendicular to the direction D1. Here, the direction D2 is, for example, the direction in which the inductors 41 and 43 are aligned, and the direction D3 is perpendicular to the directions D1 and D2. Therefore, the magnetic flux passes through the inductor 41 or 42 along an axis parallel to the direction D2.

[0040] The inductor 43 is disposed on the third main surface 31 of the second mounting substrate 3. The inductor 43 corresponds to the second inductor of the present disclosure. The inductor 43 is, for example, a surface-mount chip inductor.

[0041] The inductor 43 is included in, for example, the matching circuit 122 (see FIG. 3).

[0042] The height H1 of the inductor 41 in the direction D1 and the height H1 of the inductor 42 in the direction D1 are higher than the height H2 of the inductor 43 in the direction D1. Here, the "height H1 of the inductor 41 in the direction D1" refers to the maximum distance between the main surface of the inductor 41 and the first main surface 21 of the first mounting substrate 2 in the direction D1. The "height H1 of the inductor 42 in the direction D1" refers to the maximum distance between the main surface of the inductor 42 and the first main surface 21 of the first mounting substrate 2 in the direction D1. Furthermore, the "height H2 of the inductor 43 in the direction D1" refers to the maximum distance between the main surface of the inductor 43 and the third main surface 31 of the second mounting substrate 3 in the direction D1. Because the winding axis of the inductor 41 intersects with the direction D1, the higher the height H1 of the inductor 41, the larger the cross-sectional area of ​​the coil. That is, the inductor 41 has a larger inductance and a larger Q value than the inductor 43. Note that the inductor 42 has a similar configuration to the inductor 41.

[0043] The inductor 41 is disposed on the first main surface 21 of the first mounting substrate 2. The inductor 43 is disposed on the third main surface 31 of the second mounting substrate 3. The fourth main surface 32 of the second mounting substrate 3 and the first main surface 21 of the first mounting substrate 2 face each other. Therefore, the distance between the third main surface 31 of the second mounting substrate 3 and the second main surface 22 of the first mounting substrate 2 is longer than the distance between the first main surface 21 of the first mounting substrate 2 and the second main surface 22 of the first mounting substrate 2. As a result, the area where the inductors 41 and 43 overlap in a plan view from direction D2 is smaller than when the inductor 43 is disposed on the first main surface 21 of the first mounting substrate 2. Therefore, electromagnetic coupling between the inductors 41 and 43 is reduced.

[0044] (3.4) Electronic Components The electronic components 51 are disposed on the fourth main surface 32 of the second mounting substrate 3. The electronic components 51 are, for example, IC chips including a low-noise amplifier 152. The electronic components 51 are, for example, flip-chip mounted on the fourth main surface 32 of the second mounting substrate 3.

[0045] The electronic component 51 is located in the opening 23 of the first mounting substrate 2. More specifically, in a plan view from direction D1, the entire electronic component 51 overlaps with the opening 23 of the first mounting substrate 2. Furthermore, in a plan view from direction D2 and a plan view from direction D3, a part or the entire electronic component 51 overlaps with the first mounting substrate 2. This makes it possible to reduce the thickness of the high-frequency module 1 in direction D1 compared to when the electronic component 51 is disposed on the first mounting substrate 2 or when the electronic component 51 is not located in the opening 23 of the first mounting substrate 2.

[0046] The electronic component 51 is arranged, for example, so as to overlap the inductor 43 in a plan view from the direction D1. This allows the wiring length between the low-noise amplifier 152 and the inductor 43 to be shortened.

[0047] (3.5) External Connection Terminals The plurality of external connection terminals 10 are terminals for electrically connecting the first mounting substrate 2 to an external substrate (not shown).

[0048] As shown in FIG. 2 , the plurality of external connection terminals 10 are arranged on the second main surface 22 of the first mounting substrate 2. "The external connection terminals 10 are arranged on the second main surface 22 of the first mounting substrate 2" means that the external connection terminals 10 are mechanically connected to the second main surface 22 of the first mounting substrate 2 and that the external connection terminals 10 are electrically connected to (appropriate conductor portions of) the first mounting substrate 2. The material of the plurality of external connection terminals 10 is, for example, a metal (e.g., copper, copper alloy, etc.). Each of the plurality of external connection terminals 10 is, for example, a columnar electrode. The columnar electrode is joined to the conductor portion of the first mounting substrate 2 by, for example, solder, but is not limited thereto. For example, the columnar electrode may be joined using a conductive adhesive (e.g., a conductive paste) or may be directly joined.

[0049] (3.6) Resin Layer As shown in Fig. 2, the resin layer 61 is disposed on the first main surface 21 of the first mounting substrate 2 and the third main surface 31 of the second mounting substrate 3. The resin layer 61 covers the transmit filter 131, the receive filter 132, and the inductors 41 to 43. The resin layer 61 also covers a portion of the first main surface 21 of the first mounting substrate 2 where the inductors 41, 42 and the second mounting substrate 3 are not disposed. The resin layer 61 also covers a portion of the third main surface 31 of the second mounting substrate 3 where the transmit filter 131, the receive filter 132, and the inductor 43 are not disposed.

[0050] 2 , the resin layer 62 is disposed on the second main surface 22 of the first mounting substrate 2 and the fourth main surface 32 of the second mounting substrate 3. The resin layer 62 covers the electronic components 51. The resin layer 62 also covers portions of the second main surface 22 of the first mounting substrate 2 where the plurality of external connection terminals 10 are not disposed. The resin layer 62 also covers portions of the fourth main surface 32 of the second mounting substrate 3 where the electronic components 51 are not disposed.

[0051] The material of the resin layer 61 and the resin layer 62 includes a resin, such as an epoxy resin. In the high-frequency module 1 according to the first embodiment, the resin layer 61 and the resin layer 62 include a filler in addition to the resin.

[0052] 2, the shield layer 7 covers the resin layer 61. The shield layer 7 also covers the portions of the transmit filter 131 and the receive filter 132 that are not covered by the resin layer 61.

[0053] The shield layer 7 has, for example, a multi-layer structure in which a plurality of metal layers are stacked.

[0054] (4) Communication Device As shown in FIG. 3 , the communication device 100 includes the high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0055] The antenna 16 is connected to the antenna terminal 11 of the high-frequency module 1. The antenna 16 has a transmitting function of emitting a transmission signal output from the high-frequency module 1 as radio waves, and a receiving function of receiving a reception signal from outside as radio waves and outputting it to the high-frequency module 1.

[0056] The signal processing circuit 17 is connected to the high-frequency module 1. The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes signals passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes transmission signals and reception signals.

[0057] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high frequency signals.

[0058] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the processed transmission signal to the high-frequency module 1. The RF signal processing circuit 171 also performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the processed reception signal to the baseband signal processing circuit 172.

[0059] The baseband signal processing circuit 172 is, for example, a baseband integrated circuit (BBIC). The baseband signal processing circuit 172 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 17. The received signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as an audio signal for telephone calls.

[0060] The RF signal processing circuit 171 also functions as a control unit that controls the connection of the switch 110 of the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 using a control signal (not shown). The control unit may be provided outside the RF signal processing circuit 171, and may be provided in the high-frequency module 1 or the baseband signal processing circuit 172, for example.

[0061] (5) Effects The high-frequency module 1 according to the first embodiment includes a first mounting substrate 2, a second mounting substrate 3, inductors 41 and 42, an inductor 43, and an electronic component 51. The first mounting substrate 2 has a first main surface 21 and a second main surface 22 that face each other. The second mounting substrate 3 has a third main surface 31 and a fourth main surface 32 that face each other. The inductors 41 and 42 are disposed on the first main surface 21 of the first mounting substrate 2. The inductor 43 is disposed on the third main surface 31 of the second mounting substrate 3. The electronic component 51 is disposed on the fourth main surface 32 of the second mounting substrate 3. The first mounting substrate 2 has an opening 23. The opening 23 penetrates between the first main surface 21 and the second main surface 22 in the thickness direction D1 of the first mounting substrate 2. The winding axes of the inductors 41 and 42 intersect with the thickness direction D1 of the first mounting substrate 2. A height H1 of the inductors 41 and 42 in the thickness direction D1 of the first mounting substrate 2 is greater than a height H2 of the inductor 43 in the thickness direction D1 of the first mounting substrate 2. The inductor 43 is located in the opening 23 of the first mounting substrate 2. This makes it possible to achieve both a low profile of the high-frequency module 1 and a reduction in electromagnetic coupling between the inductors 41 and 42 and the inductor 43.

[0062] Furthermore, in the high-frequency module 1 according to the first embodiment, the second mounting substrate 3 is disposed on the first main surface 21 of the first mounting substrate 2. This makes it possible to reduce the height in the thickness direction D1 of the first mounting substrate 2 of the high-frequency module 1 even if the height H1 of the inductors 41 and 42 in the thickness direction D1 of the first mounting substrate 2 is greater than the height H2 of the inductor 43 in the thickness direction D1 of the first mounting substrate 2.

[0063] Furthermore, in the high-frequency module 1 according to the first embodiment, the electronic components 51 are located in the openings 23 of the first mounting substrate 2. Therefore, the high-frequency module 1 can be made lower in height than when the electronic components 51 are located on the second main surface 22 of the first mounting substrate 2.

[0064] Furthermore, in the high-frequency module 1 according to the first embodiment, the inductor 41 is disposed on the first main surface 21 of the first mounting substrate 2. The inductor 43 is disposed on the third main surface 31 of the second mounting substrate 3. Here, the fourth main surface 32 of the second mounting substrate 3 and the first main surface 21 of the first mounting substrate 2 face each other. Therefore, the distance between the third main surface 31 of the second mounting substrate 3 and the second main surface 22 of the first mounting substrate 2 is longer than the distance between the first main surface 21 of the first mounting substrate 2 and the second main surface 22 of the first mounting substrate 2. As a result, the area where the inductors 41 and 43 overlap in a plan view from direction D2 is smaller than when the inductor 43 is disposed on the first main surface 21 of the first mounting substrate 2. Therefore, electromagnetic coupling between the inductors 41 and 43 is reduced.

[0065] The communication device 100 according to the first embodiment includes the high-frequency module 1 and a signal processing circuit 17. The signal processing circuit 17 is connected to the high-frequency module 1. This allows the communication device 100 to achieve both a low profile of the high-frequency module 1 and a reduction in electromagnetic coupling between the inductors 41 and 42 and the inductor 43.

[0066] (Modification) In a radio frequency module 1 according to a modification of the first embodiment, the position of the opening 23 in the first mounting substrate 2 is different from the position of the opening 23 in the first mounting substrate 2 in the radio frequency module 1 according to the first embodiment.

[0067] In the radio-frequency module 1 according to the modification of the first embodiment, as shown in Fig. 4 , the opening 23 is provided at one end of the first mounting substrate 2. Note that the resin layer 62 and the shielding layer 7 are omitted from Fig. 4 . Specifically, the opening 23 contacts one end of the first mounting substrate 2 in the direction D2. For example, the first mounting substrate 2 has a U-shape surrounding the opening 23 when viewed from a plane in the direction D1. In other words, in the radio-frequency module 1 according to the modification of the first embodiment, the outer periphery of the first mounting substrate 2 and the inner periphery of the first mounting substrate 2 facing the opening 23 are connected to each other.

[0068] In the first mounting substrate 2, the plurality of electrodes 211 are arranged in a U-shape so as to surround the opening 23. In the second mounting substrate 3, the plurality of electrodes 321 are arranged in a U-shape along the outer periphery of the second mounting substrate 3.

[0069] (Embodiment 2) (1) Configuration In a high-frequency module 1 according to embodiment 2, as shown in Fig. 5, a first mounting substrate 2 has a plurality of openings 23. Also, as shown in Fig. 5, the high-frequency module 1 according to embodiment 2 includes a plurality of second mounting substrates 3. Note that, in Fig. 5, the resin layer 62 and the shielding layer 7 are omitted, as in Fig. 1.

[0070] 5 , in the high-frequency module 1 according to the second embodiment, a plurality of openings 23 are provided in the first mounting substrate 2. The plurality of openings 23 include an opening 23 a and an opening 23 b. Each of the openings 23 a and the openings 23 b penetrates between the first main surface 21 and the second main surface 22 in the direction D1. The plurality of electrodes 211 include two or more electrodes 211 arranged to surround the opening 23 a and two or more electrodes 211 arranged to surround the opening 23 b.

[0071] The multiple second mounting substrates 3 include a second mounting substrate 3a and a second mounting substrate 3b. The high-frequency module 1 according to the second embodiment also includes multiple electronic components 51. The multiple electronic components 51 include an electronic component 51a and an electronic component 51b. The electronic component 51a is arranged on the fourth main surface 32 of the second mounting substrate 3a. The electronic component 51b is arranged on the fourth main surface 32 of the second mounting substrate 3b. The electronic component 51a is arranged in the opening 23a of the first mounting substrate 2. The electronic component 51b is arranged in the opening 23b of the first mounting substrate 2. The inductor 43 is arranged on the third main surface 31 of the second mounting substrate 3a, for example.

[0072] In the high-frequency module 1 according to the second embodiment, it is possible to arrange a plurality of electronic components 51 in a plurality of openings 23 of the first mounting substrate 2. Therefore, it is possible to reduce the size of the high-frequency module 1.

[0073] (2) Effects In the high-frequency module 1 according to the second embodiment, the first mounting substrate 2 has a plurality of openings 23, including the opening 23. This allows the high-frequency module 1 to be further miniaturized.

[0074] Third Preferred Embodiment In a high-frequency module 1a according to a third preferred embodiment, the position of the opening 23 in the first mounting substrate 2 is different from the position of the opening 23 in the first mounting substrate 2 in the high-frequency module 1 according to the first preferred embodiment.

[0075] 6 and 7, in the high-frequency module 1a according to the third embodiment, the first mounting substrate 2 is L-shaped when viewed from the direction D1 in a plan view. Note that the resin layer 62 and the shielding layer 7 are omitted in FIG.

[0076] In the first mounting substrate 2, the multiple electrodes 211 are arranged in an L-shape so as to surround the opening 23. In the second mounting substrate 3, the multiple electrodes 321 are arranged in an L-shape along the outer periphery 33 of the second mounting substrate 3.

[0077] Furthermore, in the high-frequency module 1a according to the third embodiment, some of the multiple external connection terminals 10 are arranged on the fourth main surface 32 of the second mounting substrate 3. More specifically, the multiple external connection terminals 10 include multiple external connection terminals 10a and multiple external connection terminals 10b. The multiple external connection terminals 10a are arranged on the second main surface 22 of the first mounting substrate 2. The multiple external connection terminals 10b are arranged on the fourth main surface 32 of the second mounting substrate 3.

[0078] The high-frequency module 1a according to the third embodiment also makes it possible to achieve both a low profile of the high-frequency module 1a and a reduction in electromagnetic coupling between the inductors 41 and 42 and the inductor 43. Furthermore, in the high-frequency module 1a according to the third embodiment, some of the multiple external connection terminals 10 are arranged on the fourth main surface 32 of the second mounting substrate 3. Therefore, when electronic components 51 arranged on the second mounting substrate 3 are connected to the multiple external connection terminals 10, it is possible to shorten the wiring length.

[0079] (Fourth Embodiment) (1) Configuration In a high-frequency module 1b according to the fourth embodiment, as shown in FIG. 8, the thickness of the first mounting substrate 2 is greater than the thickness of the first mounting substrate 2 in the high-frequency module 1 according to the first embodiment.

[0080] 8, in the high-frequency module 1b according to the fourth embodiment, the plurality of external connection terminals 10c are arranged on the second main surface 22 of the first mounting substrate 2. Each of the plurality of external connection terminals 10c is a pad electrode.

[0081] In the radio-frequency module 1b according to the fourth embodiment, the thickness of the first mounting substrate 2 is greater than the thickness of the first mounting substrate 2 in the radio-frequency module 1 according to the first embodiment. More specifically, in the radio-frequency module 1b according to the fourth embodiment, the distance d1 between the second main surface 22 of the first mounting substrate 2 and the fourth main surface 32 of the second mounting substrate 3 is equal to or greater than the distance d2 between the main surface 511 of the electronic component 51 and the fourth main surface 32 of the second mounting substrate 3. This makes it possible to increase the distance in the direction D1 between the multiple conductor layers included in the first mounting substrate 2. This makes it possible to reduce the parasitic capacitance of the wiring inside the first mounting substrate 2, thereby reducing degradation of the characteristics of the radio-frequency module 1b.

[0082] (2) Effects The high-frequency module 1b according to the fourth embodiment includes a plurality of external connection terminals 10c. The plurality of external connection terminals 10c are pad electrodes disposed on the second main surface 22 of the first mounting substrate 2. This allows the thickness of the first mounting substrate 2 to be increased in the high-frequency module 1b. This makes it possible to reduce the parasitic capacitance of the wiring inside the first mounting substrate 2, thereby reducing deterioration in the characteristics of the high-frequency module 1b.

[0083] 9, the radio-frequency module 1c according to the fifth embodiment includes a shielding layer 71 in addition to the configuration of the radio-frequency module 1 according to the first embodiment. The radio-frequency module 1c according to the fifth embodiment also includes a resin layer 63 and a resin layer 64 instead of the resin layer 61.

[0084] 9 , the resin layer 63 is disposed on the third main surface 31 of the second mounting substrate 3. The resin layer 63 covers the transmit filter 131, the receive filter 132, and the inductor 43. The resin layer 63 also covers a portion of the third main surface 31 of the second mounting substrate 3 where the transmit filter 131, the receive filter 132, and the inductor 43 are not disposed. In other words, the resin layer 63 covers the third main surface 31 of the second mounting substrate 3 and the inductor 43. The resin layer 63 corresponds to the resin layer of the present disclosure.

[0085] The material of the resin layer 63 includes a resin. The resin is, for example, an epoxy resin. In the high-frequency module 1c according to the fifth embodiment, the resin layer 63 includes a filler in addition to the resin. The thermal conductivity of the resin layer 63 is higher than the thermal conductivity of the resin layer 62 and the thermal conductivity of the resin layer 64.

[0086] The shield layer 71 covers the resin layer 63. The shield layer 71 is in contact with the shield layer 7. The shield layers 7 and 71 correspond to the shield layers of the present disclosure. In the radio-frequency module 1c according to the fifth embodiment, the shield layer 7 is in contact with the transmit filter 131 and the receive filter 132 without the resin layer 63 therebetween. This improves the heat dissipation performance of the transmit filter 131 and the receive filter 132 in the radio-frequency module 1c according to the fifth embodiment.

[0087] Furthermore, in the high-frequency module 1c according to the fifth embodiment, a shield layer 71 is located between the inductors 41 and 43 and between the inductors 42 and 43. This further reduces the electromagnetic coupling between the inductors 41 and 43 and between the inductors 42 and 43.

[0088] 9 , the resin layer 64 is disposed on the first main surface 21 of the first mounting substrate 2. The resin layer 64 covers the inductors 41 and 42. The resin layer 64 also covers the portions of the first main surface 21 of the first mounting substrate 2 where the inductors 41 and 42 are not disposed.

[0089] The material of the resin layer 64 includes a resin, such as an epoxy resin. In the high-frequency module 1c according to the fifth embodiment, the resin layer 64 includes a filler in addition to the resin.

[0090] (2) Effects The high-frequency module 1c according to the fifth embodiment includes the resin layer 63 and the shielding layers 7 and 71. The resin layer 63 covers the third main surface 31 of the second mounting substrate 3 and the inductor 43. The shielding layers 7 and 71 cover the resin layer 63. As a result, in the high-frequency module 1c, the electromagnetic coupling between the inductors 41 and 43 and the electromagnetic coupling between the inductors 42 and 43 are further reduced.

[0091] (Variations) (1) Configuration As shown in FIG. 10, a high-frequency module 1c according to a variation of the fifth embodiment includes one or more (two in FIG. 10) shielding members 72 in addition to the configuration of the high-frequency module 1 of the first embodiment.

[0092] The two shield members 72 are disposed on the third main surface 31 of the second mounting substrate 3. More specifically, one (first) of the two shield members 72 is disposed between the inductor 41 and the inductor 43 in a plan view from the direction D1. The other (second) of the two shield members 72 is disposed between the inductor 42 and the inductor 43 in a plan view from the direction D1. Specifically, the two shield members 72 extending in the direction D3 are disposed at both ends of the second mounting substrate 3 in the direction D2. The material of the shield members 72 is a conductor, such as copper.

[0093] This further reduces the electromagnetic coupling between the inductors 41 and 43 and the electromagnetic coupling between the inductors 42 and 43 .

[0094] (2) Effects The high-frequency module 1c according to the modified example of the fifth embodiment includes a shield member 72. The shield member 72 is disposed on the third main surface 31 of the second mounting substrate 3. In a plan view from the direction D1, the shield member 72 is disposed between the inductors 41 and 42 and the inductor 43. This further reduces the electromagnetic coupling between the inductors 41 and 43 and between the inductors 42 and 43.

[0095] Sixth Embodiment (1) Configuration In a high-frequency module 1d according to the sixth embodiment, as shown in FIG. 11 , the arrangement of the third main surface 31 and the fourth main surface 32 of the second mounting substrate 3 is reversed compared to the high-frequency module 1 according to the first embodiment.

[0096] In the high-frequency module 1d according to the sixth embodiment, as shown in FIG. 11, the first main surface 21 of the first mounting substrate 2 and the third main surface 31 of the second mounting substrate 3 face each other.

[0097] An electronic component 51 is disposed on the fourth main surface 32 of the second mounting substrate 3 .

[0098] A transmitting filter 131 , a receiving filter 132 , and an inductor 43 are arranged on the third main surface 31 of the second mounting substrate 3 .

[0099] The second mounting substrate 3 has a plurality of electrodes 321 on the third main surface 31. The plurality of electrodes 321 are arranged along the outer periphery 33 of the second mounting substrate 3 in a plan view from the direction D1. The plurality of electrodes 321 are, for example, pad electrodes. The plurality of electrodes 321 are connected to the plurality of electrodes 211 of the first mounting substrate 2 in a one-to-one relationship. The plurality of electrodes 321 and the plurality of electrodes 211 are connected by, for example, a plurality of solders 34.

[0100] 11 , the resin layer 61 is disposed on the first main surface 21 of the first mounting substrate 2 and the fourth main surface 32 of the second mounting substrate 3. The resin layer 61 covers the electronic components 51 and the inductors 41 and 42. The resin layer 61 also covers a portion of the first main surface 21 of the first mounting substrate 2 where the inductors 41 and 42 and the second mounting substrate 3 are not disposed. The resin layer 61 also covers a portion of the fourth main surface 32 of the second mounting substrate 3 where the electronic components 51 are not disposed.

[0101] 11 , the resin layer 62 is disposed on the second main surface 22 of the first mounting substrate 2 and the third main surface 31 of the second mounting substrate 3. The resin layer 62 covers the transmit filter 131, the receive filter 132, and the inductor 43. The resin layer 62 also covers portions of the second main surface 22 of the first mounting substrate 2 where the plurality of external connection terminals 10 are not disposed. The resin layer 62 also covers portions of the third main surface 31 of the second mounting substrate 3 where the transmit filter 131, the receive filter 132, and the inductor 43 are not disposed.

[0102] 11 , the transmit filter 131, the receive filter 132, and the inductor 43 are located in the opening 23 of the first mounting substrate 2. This makes it possible to reduce the thickness of the high-frequency module 1 in the direction D1. Furthermore, the overlapping area between the inductors 41 and 43 in a plan view from the direction D2 is even smaller than that of the high-frequency module 1 according to the first embodiment. Therefore, the electromagnetic coupling between the inductors 41 and 43 is further reduced.

[0103] (2) Effects In the high-frequency module 1d according to the sixth embodiment, the inductor 43 is located in the opening 23 of the first mounting substrate 2. This further reduces the electromagnetic coupling between the inductors 41 and 42 and the inductor 43.

[0104] 12 , a high-frequency module 1e according to a modification of the sixth embodiment includes a shielding layer 73 in addition to the configuration of the high-frequency module 1d according to the sixth embodiment. Furthermore, a high-frequency module 1c according to a modification of the sixth embodiment includes a resin layer 65 and a resin layer 64 instead of the resin layer 61.

[0105] 12 , the resin layer 65 is disposed on the fourth main surface 32 of the second mounting substrate 3. The resin layer 65 covers the electronic components 51. The resin layer 65 also covers portions of the third main surface 31 of the second mounting substrate 3 where the electronic components 51 are not disposed. In other words, the resin layer 65 covers the fourth main surface 32 of the second mounting substrate 3 and the electronic components 51. The resin layer 65 corresponds to the resin layer of the present disclosure.

[0106] The material of the resin layer 65 includes a resin. The resin is, for example, an epoxy resin. In the high-frequency module 1e according to the modified example of the sixth embodiment, the resin layer 65 includes a filler in addition to the resin. The thermal conductivity of the resin layer 65 is higher than the thermal conductivity of the resin layer 62 and the thermal conductivity of the resin layer 64.

[0107] The shielding layer 73 covers the resin layer 65. The shielding layer 73 is in contact with the shielding layer 7. The shielding layers 7 and 73 correspond to the shielding layers of the present disclosure. In the high-frequency module 1e according to the sixth embodiment, the shielding layer 73 is in contact with the electronic component 51 without the resin layer 65 therebetween. This improves the heat dissipation performance of the electronic component 51 in the high-frequency module 1e according to the modified example of the sixth embodiment.

[0108] Furthermore, in the high-frequency module 1e according to the modified example of the sixth embodiment, a shield layer 73 is located between the inductors 41 and 43 and between the inductors 42 and 43. This further reduces the electromagnetic coupling between the inductors 41 and 43 and between the inductors 42 and 43.

[0109] (2) Effects The high-frequency module 1e according to the modified example of the sixth embodiment includes the resin layer 65 and the shielding layers 7 and 73. The resin layer 65 covers the fourth main surface 32 of the second mounting substrate 3 and the electronic components 51. The shielding layers 7 and 73 cover the resin layer 65. As a result, in the high-frequency module 1e, the shielding layers 7 and 73 further reduce the electromagnetic coupling between the inductors 41 and 43 and the electromagnetic coupling between the inductors 42 and 43.

[0110] Seventh Embodiment (1) Configuration The high-frequency module 1f according to the seventh embodiment further includes an electronic component 52 in addition to the configuration of the high-frequency module 1 according to the first embodiment. The high-frequency module 1f according to the seventh embodiment also includes a plurality of electronic components 51. In the high-frequency module 1f according to the seventh embodiment, the arrangement of the components arranged on the third main surface 31 of the second mounting substrate 3 differs from that of the high-frequency module 1 according to the first embodiment. In the high-frequency module 1f according to the seventh embodiment, the inductor 42 is not included in the matching circuit 142, and the inductor 43 is not included in the matching circuit 122.

[0111] 13 , the electronic component 52 is disposed on the third main surface 31 of the second mounting substrate 3. The electronic component 52 is, for example, an IC chip including a power amplifier 151 (see FIG. 3 ). The electronic component 52 is, for example, flip-chip mounted on the third main surface 31 of the second mounting substrate 3.

[0112] 13, in the high-frequency module 1f according to the seventh embodiment, a receive filter 132 and a transmit filter 131 are disposed between the inductor 41 and the inductor 43. In addition, in the high-frequency module 1f, an electronic component 52 is disposed between the inductor 43 and the inductor 42, as shown in FIG. 13. This makes it possible to reduce the electromagnetic coupling between the inductor 41 and the inductor 43 and between the inductor 42 and the inductor 43.

[0113] In the high-frequency module 1f according to the seventh embodiment, the inductor 41 is included in the matching circuit 142 (see FIG. 3). The inductor 42 is included in the matching circuit 122 (see FIG. 3). The inductor 43 is included in the matching circuit 141 (see FIG. 3). That is, the inductor 41 and the inductor 42 are connected to the receiving filter 132 or the low-noise amplifier 152. Specifically, the inductor 41 is connected to the input terminals of the receiving filter 132 and the low-noise amplifier 152. The inductor 42 is connected to the receiving filter 132.

[0114] Furthermore, the inductor 43 is connected to the transmit filter 131 or the power amplifier 151. Specifically, the inductor 43 is connected to the transmit filter 131 and the power amplifier 151. This makes it possible to shorten the wiring length between the inductor 43 and the transmit filter 131 and the power amplifier 151 connected to the inductor 43.

[0115] In the radio-frequency module 1 f according to the seventh embodiment, the inductors 41 and 42 included in the reception path between the selection terminal 113 of the switch 110 and the signal output terminal 13 are disposed on the first main surface 21 of the first mounting substrate 2. In addition, in the radio-frequency module 1 f according to the seventh embodiment, the power amplifier 151, the inductor 43, and the transmission filter 131 included in the transmission path between the selection terminal 112 of the switch 110 and the signal input terminal 12 are disposed on the third main surface 31 of the second mounting substrate 3. Therefore, the radio-frequency module 1 f according to the seventh embodiment can improve isolation between the transmission path and the reception path. That is, the radio-frequency module 1 f according to the seventh embodiment can reduce deterioration in reception sensitivity.

[0116] (2) Effects The high-frequency module if according to the seventh embodiment includes a transmit filter 131 disposed on the third main surface 31 of the second mounting substrate 3. The inductor 43 is connected to the transmit filter 131. The transmit filter 131 is disposed between the inductors 41 and 43. This makes it possible to reduce electromagnetic coupling between the inductors 41 and 43.

[0117] The high-frequency module 1f according to the seventh embodiment also includes a receiving filter 132. The inductor 41 is connected to the receiving filter 132. This reduces electromagnetic coupling between the inductor 43 and the inductor 41, thereby improving isolation between the transmitting path and the receiving path in the high-frequency module 1f.

[0118] The high-frequency module if according to the seventh embodiment also includes a low-noise amplifier 152. The inductor 41 is connected to the input terminal of the low-noise amplifier 152. This makes it possible to reduce deterioration in reception sensitivity in the high-frequency module if.

[0119] (Modifications) Modifications of the embodiment will be described below.

[0120] The high-frequency modules 1 to 1f according to the first to seventh embodiments and their respective modifications may include a plurality of power amplifiers 151. Similarly, the high-frequency modules 1 to 1f according to the first to fifth embodiments and their respective modifications may include a plurality of low-noise amplifiers 152.

[0121] Furthermore, the high-frequency modules 1 to 1e according to the first to sixth embodiments and their respective modifications may not include the low-noise amplifier 152 but may include one or more power amplifiers 151. Similarly, the high-frequency modules 1 to 1e according to the first to sixth embodiments and their respective modifications may not include the power amplifier 151 but may include one or more low-noise amplifiers 152.

[0122] Furthermore, the high-frequency modules 1 to 1f according to the first to seventh embodiments and their modifications may not include the inductor 42. Furthermore, the height of the inductor 42 in the direction D1 may be different from the height H1 of the inductor 41 in the direction D1.

[0123] In the high-frequency modules 1 to 1f according to the first to seventh embodiments and their modifications, the shield layer 7 may be connected to a ground electrode. The shield layers 71 and 73 or the shield member 72 may be connected to a ground electrode. This improves the effect of reducing electromagnetic coupling between the inductors 41 and 42 and the inductor 43.

[0124] (Aspects) A high-frequency module (1 to 1f) according to a first aspect includes a first mounting substrate (2), a second mounting substrate (3), a first inductor (41, 42), a second inductor (43), and an electronic component (51). The first mounting substrate (2) has a first main surface (21) and a second main surface (22) that face each other. The second mounting substrate (3) has a third main surface (31) and a fourth main surface (32) that face each other. The first inductors (41, 42) are disposed on the first main surface (21) of the first mounting substrate (2). The second inductor (43) is disposed on the third main surface (31) of the second mounting substrate (3). The electronic component (51) is disposed on the fourth main surface (32) of the second mounting substrate (3). The first mounting substrate (2) has an opening (23). The opening (23) penetrates between the first main surface (21) and the second main surface (22) in the thickness direction (D1) of the first mounting substrate (2). The winding axes of the first inductors (41, 42) intersect with the thickness direction (D1) of the first mounting substrate (2). The height (H1) of the first inductors (41, 42) in the thickness direction (D1) of the first mounting substrate (2) is higher than the height (H2) of the second inductor (43) in the thickness direction (D1) of the first mounting substrate (2). The second inductor (43) or the electronic component (51) is located in the opening (23) of the first mounting substrate (2).

[0125] According to the high-frequency module (1 to 1 f) of the above aspect, it is possible to achieve both a low profile of the high-frequency module (1 to 1 f) and a reduction in electromagnetic coupling between the first inductor (41, 42) and the second inductor (43).

[0126] In the high-frequency module (1 to 1f) according to the second aspect, in the first aspect, the second mounting substrate (3) is disposed on the first main surface (21) of the first mounting substrate (2).

[0127] According to the high-frequency modules (1 to 1f) of the above aspect, even if the height (H1) in the thickness direction (D1) of the first mounting substrate (2) of the first inductor (41, 42) is greater than the height (H2) in the thickness direction (D1) of the first mounting substrate (2) of the second inductor (43), it is possible to reduce the height in the thickness direction (D1) of the first mounting substrate (2) of the high-frequency modules (1 to 1f).

[0128] In the high frequency module (1 to 1c) according to the third aspect, in the first or second aspect, the electronic component (51) is located in the opening (23) of the first mounting substrate (2).

[0129] According to the high-frequency module (1 to 1c) according to the above aspect, it is possible to make the high-frequency module (1 to 1c) lower in height than when the electronic component (51) is arranged on the second main surface (22) of the first mounting substrate (2).

[0130] In the high-frequency module (1) according to the fourth aspect, in any one of the first to third aspects, the first mounting substrate (2) has a plurality of openings (23) including the opening (23).

[0131] According to the high-frequency module (1) according to the above aspect, it is possible to further reduce the size of the high-frequency module (1).

[0132] A high-frequency module (1b) according to a fifth aspect is the high-frequency module (1b) of any one of the first to fourth aspects, further comprising a plurality of external connection terminals (10c). The plurality of external connection terminals (10c) are pad electrodes arranged on the second main surface (22) of the first mounting substrate (2).

[0133] According to the high-frequency module (1b) of the above aspect, it is possible to increase the thickness of the first mounting substrate (2), thereby reducing the parasitic capacitance of the wiring inside the first mounting substrate (2) and reducing the deterioration of the characteristics of the high-frequency module (1b).

[0134] A high-frequency module (1c) according to a sixth aspect is the high-frequency module (1c) of any one of the first to fifth aspects, further comprising a resin layer (63) and a shielding layer (7, 71) covering the resin layer (63). The resin layer (63) covers the third main surface (31) of the second mounting substrate (3) and the second inductor (43). The shielding layer (7, 71) covers the resin layer (63).

[0135] According to the high-frequency module (1c) of the above aspect, it is possible to further reduce the electromagnetic coupling between the first inductors (41, 42) and the second inductor (43).

[0136] A high-frequency module (1c) according to a seventh aspect is the high-frequency module (1c) of any one of the first to fifth aspects, further including a shielding member (72). The shielding member (72) is disposed on the third main surface (31) of the second mounting substrate (3). In a plan view in the thickness direction (D1) of the first mounting substrate (2), the shielding member (72) is disposed between the first inductors (41, 42) and the second inductor (43).

[0137] According to the high-frequency module (1c) of the above aspect, it is possible to further reduce the electromagnetic coupling between the first inductors (41, 42) and the second inductor (43).

[0138] In a high-frequency module (1d) according to an eighth aspect, in the first or second aspect, the second inductor (43) is located in the opening (23) of the first mounting substrate (2).

[0139] According to the high-frequency module (1c) of the above aspect, it is possible to further reduce the electromagnetic coupling between the first inductors (41, 42) and the second inductor (43).

[0140] A high-frequency module (1e) according to a ninth aspect is the eighth aspect, further including a resin layer (65) and a shielding layer (7, 73). The resin layer (65) covers the fourth main surface (32) of the second mounting substrate (3) and the electronic components (51). The shielding layer (7, 73) covers the resin layer (65).

[0141] According to the high-frequency module (1e) of the above aspect, the shielding layer (7, 73) further reduces electromagnetic coupling between the first inductor (41, 42) and the second inductor (43).

[0142] A high-frequency module (1f) according to a tenth aspect is the high-frequency module (1f) of any one of the first to ninth aspects, further comprising a filter (131) disposed on the third main surface (31) of the second mounting substrate (3). The second inductor (43) is connected to the filter (131). The filter (131) is disposed between the first inductor (41) and the second inductor (43).

[0143] According to the high-frequency module (1f) of the above aspect, the electromagnetic coupling between the first inductor (41) and the second inductor (43) is further reduced.

[0144] A high-frequency module (1f) according to an eleventh aspect is the high-frequency module (1f) of the tenth aspect, further including a receiving filter (132) different from the filter (131). The filter (131) is a transmitting filter. The first inductor (41) is connected to the receiving filter (132).

[0145] According to the high-frequency module (1f) of the above aspect, the electromagnetic coupling between the first inductor (41) and the second inductor (43) is reduced, thereby improving isolation between the receiving path including the receiving filter (132) and the transmitting path including the transmitting filter (131).

[0146] A high-frequency module (1f) according to a twelfth aspect is the tenth or eleventh aspect, further comprising a low-noise amplifier (152). The first inductor (41) is connected to an input terminal of the low-noise amplifier (152).

[0147] The high-frequency module (1f) according to the above aspect improves isolation between the receiving path including the low-noise amplifier (152) and the transmitting path including the transmitting filter (131). Therefore, the high-frequency module (1f) can reduce deterioration in receiving sensitivity.

[0148] A communication device (100) according to a thirteenth aspect includes a high-frequency module (1 to 1f) according to any one of the first to twelfth aspects and a signal processing circuit (17). The signal processing circuit (17) is connected to the high-frequency module (1 to 1f).

[0149] According to the communication device (100) relating to the above aspect, in the high-frequency module (1 to 1 f), it is possible to achieve both a low profile of the high-frequency module (1 to 1 f) and a reduction in electromagnetic coupling between the first inductor (41, 42) and the second inductor (43).

[0150] REFERENCE SIGNS 1, 1a, 1b, 1c, 1d, 1e, 1f High frequency module 2 First mounting substrate 21 First main surface 22 Second main surface 23, 23a, 23b Opening 211 Electrode 3, 3a, 3b Second mounting substrate 31 Third main surface 32 Fourth main surface 33 Outer periphery 34 Solder 321 Electrode 41 Inductor (first inductor) 42 Inductor (first inductor) 43 Inductor (second inductor) 51, 51a, 51b Electronic component 52 Electronic component 61, 62, 64 Resin layer 63 Resin layer 65 Resin layer 7 Shield layer 71, 73 Shield layer 72 Shield member 10, 10a, 10b, 10c External connection terminal 11 Antenna terminal 12 Signal input terminal 13 Signal output terminal 110 Switch 111 common terminal 112, 113 selection terminal 121 matching circuit 122 matching circuit 131 transmit filter (filter) 132 receive filter 141 matching circuit 142 matching circuit 151 power amplifier 152 low noise amplifier 100 communication device 16 antenna 17 signal processing circuit 171 RF signal processing circuit 172 baseband signal processing circuit 511 principal surface d1 distance d2 distance D1 direction D2 direction D3 direction H1 height H2 height

Claims

1. A high-frequency module comprising: a first mounting board having first and second main surfaces opposing each other; a second mounting board having third and fourth main surfaces opposing each other; a first inductor disposed on the first main surface of the first mounting board; a second inductor disposed on the third main surface of the second mounting board; and an electronic component disposed on the fourth main surface of the second mounting board, wherein the first mounting board has an opening that passes through between the first and second main surfaces in a thickness direction of the first mounting board, the winding axis of the first inductor intersects with the thickness direction of the first mounting board, the height of the first inductor in the thickness direction of the first mounting board is greater than the height of the second inductor in the thickness direction of the first mounting board, and the second inductor or the electronic component is located in the opening of the first mounting board.

2. The high frequency module according to claim 1, wherein the second mounting substrate is disposed on the first main surface of the first mounting substrate.

3. The high frequency module according to claim 1 or 2, wherein the electronic component is located in the opening of the first mounting substrate.

4. The high-frequency module according to any one of claims 1 to 3, wherein the first mounting substrate has a plurality of openings including the opening.

5. The high-frequency module according to any one of claims 1 to 4, further comprising a plurality of external connection terminals that are pad electrodes arranged on the second main surface of the first mounting substrate.

6. The high-frequency module according to any one of claims 1 to 5, further comprising: a resin layer covering the third main surface of the second mounting substrate and the second inductor; and a shielding layer covering the resin layer.

7. The high-frequency module according to any one of claims 1 to 5, further comprising a shielding member disposed on the third main surface of the second mounting substrate, wherein the shielding member is disposed between the first inductor and the second inductor in a plan view in the thickness direction of the first mounting substrate.

8. The high-frequency module according to claim 1 or 2, wherein the second inductor is located in the opening of the first mounting substrate.

9. The high-frequency module according to claim 8, further comprising: a resin layer covering the fourth main surface of the second mounting substrate and the electronic components; and a shielding layer covering the resin layer.

10. The high-frequency module according to any one of claims 1 to 9, further comprising a filter disposed on the third main surface of the second mounting substrate, the second inductor being connected to the filter, and the filter being disposed between the first inductor and the second inductor.

11. The high-frequency module according to claim 10, further comprising a receiving filter different from the filter, the filter being a transmitting filter, and the first inductor being connected to the receiving filter.

12. The high-frequency module according to claim 10 or 11, further comprising a low-noise amplifier, wherein the first inductor is connected to an input terminal of the low-noise amplifier.

13. A communication device comprising: a high-frequency module according to any one of claims 1 to 12; and a signal processing circuit connected to the high-frequency module.

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