Member and method for producing member

Abstract

This member is for use in a semiconductor production device and comprises a first member, a second member, and an annular seal. A first opening is formed in the first member. A second opening communicating with the first opening is formed in the second member. The annular seal is disposed between the first member and the second member. A groove is formed in a surface facing the second member around the first opening of the first member, the groove accommodates the annular seal, and a thermal insulation member is provided between the annular seal and at least one of the first member and the second member.

Description

Component and method for manufacturing the component

[0001] Various aspects and embodiments of the present disclosure relate to components and methods of manufacturing components.

[0002] Patent Document 1 listed below discloses a substrate processing apparatus in which "in a substrate processing apparatus 10, a stage 13 has a sealing surface 20 and a stage through-hole 27 that opens into the sealing surface 20, a base arm 18 that is movable toward the stage 13 has an arm through-hole 28 that faces the stage through-hole 27, and a female thread portion 29 is formed on the side of the arm through-hole 28, and a pusher pin 17 that fits through the stage through-hole 27 and the arm through-hole 28 has a male thread portion 30 that is located on the side of the base arm 18 opposite the stage 13, and after the pusher pin 17 moves upward and a flange 35 of the pusher pin 17 and an O-ring 21 arranged to surround the opening of the sealing surface 20 are separated, when the base arm 18 moves downward, an end 29b of the female thread portion 29 abuts an end 30a of the male thread portion 30."

[0003] Japanese Patent Application Laid-Open No. 2008-187102

[0004] The present disclosure provides a member that can maintain fluid sealing properties even in high-temperature or low-temperature environments.

[0005] A member according to one aspect of the present disclosure is a member used in a semiconductor manufacturing apparatus, and includes a first member, a second member, and an annular seal. A first opening is formed in the first member. A second opening communicating with the first opening is formed in the second member. The annular seal is disposed between the first member and the second member. A groove is formed around the first opening on a surface of the first member facing the second member, and the groove accommodates the annular seal. A heat insulating member is provided between at least one of the first member and the second member and the annular seal.

[0006] According to various aspects and embodiments of the present disclosure, it is possible to provide a member that can maintain fluid sealing properties even in high-temperature or low-temperature environments.

[0007] FIG. 1 is a schematic diagram showing an example of a plasma processing system. FIG. 2 is a cross-sectional view showing an example of the detailed structure of a substrate support. FIG. 3 is a view showing an example of the upper surface of a base. FIG. 4 is a view showing an example of an arrangement of O-rings and heat insulating members. FIG. 5 is a flowchart showing an example of a manufacturing procedure for a main body of a substrate support. FIG. 6 is a view showing another example of an arrangement of O-rings and heat insulating members. FIG. 7 is a view showing another example of an arrangement of O-rings and heat insulating members. FIG. 8 is a view showing another example of an arrangement of O-rings and heat insulating members. FIG. 9 is a view showing another example of an arrangement of O-rings and heat insulating members. FIG. 10 is a schematic cross-sectional view showing an example of the structure of a showerhead.

[0008] Hereinafter, embodiments of a member and a method for manufacturing the member will be described in detail with reference to the drawings. Note that the disclosed member and method for manufacturing the member are not limited to the following embodiments.

[0009] The mounting table is equipped with a heating mechanism and a cooling mechanism, and by adjusting the balance between these mechanisms, the temperature of the substrate placed on the mounting table can be controlled to a desired temperature. The cooling mechanism uses a fluid coolant. O-rings made of fluororubber or the like are placed around the connecting parts of the coolant flow path to prevent the coolant from leaking.

[0010] However, when the refrigerant temperature is low, the temperature around the refrigerant flow path drops, causing the temperature of the O-ring located around the refrigerant flow path to drop. When the temperature of the O-ring drops, the O-ring loses its elasticity, reducing the sealing ability of the O-ring. This can lead to refrigerant leaking around the flow path.

[0011] Furthermore, depending on the processing conditions, substrates may be processed in a high-temperature environment. In a high-temperature environment, the O-ring may also reach a high temperature. When the O-ring reaches a high temperature, it may change in quality or melt, reducing the sealing ability of the O-ring. This may result in fluid leakage around the flow path.

[0012] Therefore, the present disclosure provides a member that can maintain fluid sealing properties even in high-temperature or low-temperature environments.

[0013] [Configuration of Plasma Processing System] An example of the configuration of a plasma processing system will be described below: Fig. 1 is a schematic diagram showing an example of a plasma processing system.

[0014] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The plasma processing apparatus 1 is an example of a semiconductor manufacturing apparatus. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 is an example of a mounting table. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110, an electrostatic chuck 1111, an RF plate 1112, and a support pedestal 1113. The base 1110 is an example of a cooling plate. The support pedestal 1113 is made of an insulating material and is disposed at the bottom of the plasma processing chamber 10. The RF plate 1112 is disposed on the support pedestal 1113. The RF plate 1112 includes a conductive member. The conductive member of the RF plate 1112 may function as a lower electrode. The base 1110 is disposed on the RF plate 1112. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the RF plate 1112 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, is supplied to the flow path 1110a through a cavity 11a. The heat transfer fluid flowing through the flow path 1110a is then returned to an external device that controls the temperature of the heat transfer medium through a cavity 11b. The temperature of the heat transfer medium flowing through the flow path 1110a is controlled to be below 0°C (e.g., −70°C or lower). As a result, the temperature of the base 1110 may be below 0°C (e.g., −70°C or lower). In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 also includes a heat transfer gas supply unit configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111 a. The heat transfer gas is supplied to the gap between the back surface of the substrate W and the central region 111 a via a cavity 11 c that serves as a flow path for the heat transfer gas.

[0019] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed. When the RF power source 31 supplies an RF signal (RF power) to the lower electrode, the RF signal (RF power) is supplied to the lower electrode via electrical wiring disposed in the support pedestal 1113 and a cavity 11d formed in the bottom of the plasma processing chamber 10. The electrical wiring is an example of a structure disposed in the cavity 11d.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode. Note that when the DC power supply 32 applies a DC signal to the lower electrode, the DC signal is applied to the lower electrode via electrical wiring disposed in the support pedestal 1113 and a cavity 11d formed in the bottom of the plasma processing chamber 10.

[0025] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0028] 2 is a cross-sectional view showing an example of the detailed structure of the substrate support unit 11. In this embodiment, the main body 111 of the substrate support unit 11 includes a base 1110, an electrostatic chuck 1111, an RF plate 1112, and a support base 1113. The electrostatic chuck 1111 and the base 1110 are fastened together by a screw 50a. The base 1110 and the RF plate 1112 are fastened together by a screw 50b. The RF plate 1112 and the support base 1113 are fastened together by a screw 50c. With respect to the relationship between the base 1110 and the RF plate 1112, the portion including the base 1110 and the RF plate 1112 is an example of a member, the base 1110 is an example of a first member, and the electrostatic chuck 1111 is an example of a second member.

[0029] The bottom of the plasma processing chamber 10 is formed with cavities 11a and 11b which serve as flow paths for the heat transfer medium, cavity 11c which serves as a flow path for the heat transfer gas, cavity 11d in which electrical wiring for transmitting RF signals is arranged, and cavity 11e in which electrical wiring for transmitting DC voltage applied to the electrostatic electrode 1111b is arranged.

[0030] The support base 1113 is disposed on the bottom of the plasma processing chamber 10. The support base 1113 also has cavities 11a and 11b that serve as flow paths for a heat transfer medium, a cavity 11c that serves as a flow path for a heat transfer gas, a cavity 11d in which electrical wiring for transmitting RF signals is disposed, and a cavity 11e in which electrical wiring for transmitting DC voltage is disposed. The support base 1113 is disposed on the bottom of the plasma processing chamber 10 so that the cavities 11a to 11e of the support base 1113 are respectively connected to the cavities 11a to 11e formed in the bottom of the plasma processing chamber 10. O-rings 111c are disposed between the support base 1113 and the bottom of the plasma processing chamber 10, around each of the cavities 11a to 11e. In this embodiment, the O-rings 111c are formed of a fluororubber having a C—F bond, such as Viton (registered trademark). The O-ring 111c is an example of an annular seal.

[0031] An RF plate 1112 is placed on the support base 1113. The RF plate 1112 also has formed therein cavities 11a and 11b which serve as flow paths for the heat transfer medium, a cavity 11c which serves as a flow path for the heat transfer gas, and a cavity 11e in which electrical wiring for transmitting DC voltage is disposed.

[0032] A base 1110 is disposed on the RF plate 1112. The base 1110 also has formed therein cavities 11a and 11b which serve as flow paths for the heat transfer medium, a cavity 11c which serves as a flow path for the heat transfer gas, and a cavity 11e in which electrical wiring for transmitting DC voltage is disposed.

[0033] An electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 also has a cavity 11c that serves as a flow path for a heat transfer gas and a cavity 11e in which electrical wiring for transmitting a DC voltage is disposed.

[0034] Fig. 3 is a diagram showing an example of the upper surface of the base 1110. On the upper surface of the base 1110, for example, as shown in Fig. 3, an opening 52c corresponding to the cavity 11c and an opening 52e corresponding to the cavity 11e are formed.

[0035] A groove 54c in which an O-ring 111c is disposed is formed around the periphery of the opening 52c. A groove 54e in which an O-ring 111c is disposed is formed around the periphery of the opening 52e. A plurality of screw holes 51a are formed on the periphery of the upper surface of the base 1110, into which screws 50a are inserted to fasten the base 1110 and the electrostatic chuck 1111.

[0036] Although not shown in FIG. 2 , the main body 111 is formed with a plurality of cavities 11 f (three in the example of FIG. 3 ) into which lift pins for lifting the substrate W are inserted. FIG. 3 also shows a plurality of openings 52 f corresponding to the plurality of cavities 11 f into which the lift pins are inserted. Grooves 54 f in which O-rings 111 c are disposed are formed around each of the openings 52 f. The lift pins inserted into the cavities 11 f are an example of structures disposed in the cavities 11 f. Grooves may also be formed around each of the plurality of screw holes 51 a on the upper surface of the base 1110, and O-rings 111 c may be disposed in the grooves. Hereinafter, when the grooves 54 c, 54 e, and 54 f are collectively referred to without distinction, they will be referred to as grooves 54.

[0037] FIG. 4 is a diagram showing an example of the arrangement of the O-ring 111c and the heat insulating member 111d. As shown in FIG. 4, a groove 54e is formed on the upper surface of the base 1110 around the opening 52e corresponding to the cavity 11e. The O-ring 111c and the heat insulating member 111d are disposed in the groove 54e. The heat insulating member 111d is made of a material that suppresses heat transfer and is disposed on a bottom 540 of the groove 54e of the base 1110. The O-ring 111c is disposed between the heat insulating member 111d and the electrostatic chuck 1111. The O-ring 111c is disposed in the groove 54e at a position spaced apart from a sidewall 541 of the groove 54e. The electrostatic chuck 1111 is disposed on the base 1110, and the base 1110 and the electrostatic chuck 1111 are fastened together with a plurality of screws 50a. An O-ring 111c is disposed around the opening 52e, thereby preventing the fluid flowing in the cavity 11e from leaking out between the base 1110 and the electrostatic chuck 1111.

[0038] In this embodiment, the temperature of the fluid flowing through the flow path 1110a of the base 1110 is below 0°C (for example, −70°C or lower). As a result, the temperature of the base 1110 may become below 0°C (for example, −70°C or lower). Therefore, if the O-ring 111c is disposed in contact with the base 1110, the temperature of the O-ring 111c also decreases due to the transfer of heat between the base 1110 and the O-ring 111c. If the temperature of the O-ring 111c decreases, the elasticity of the O-ring 111c may be lost, and the sealing ability of the O-ring 111c may decrease.

[0039] However, in this embodiment, a heat insulating member 111d made of a material that suppresses heat transfer is disposed between the O-ring 111c and the base 1110. Furthermore, the O-ring 111c is disposed in the groove 54e at a position away from the side wall 541 of the groove 54e. This suppresses heat transfer between the base 1110 and the O-ring 111c compared to when the base 1110 and the O-ring 111c are in contact with each other. This allows the temperature of the O-ring 111c to be maintained within a temperature range that maintains the elasticity of the O-ring 111c, and allows the O-ring 111c to maintain sufficient sealing performance, even when the temperature of the base 1110 drops.

[0040] The heat insulating member 111d may be made of a material containing silicone, for example. An example of a material containing silicone is modified silicone rubber. Examples of modified silicone rubber include vinyl methyl silicone rubber (VQM) and fluorovinyl methyl silicone rubber (FVQM). By using such a material to form the heat insulating member 111d, a high level of sealing can be maintained between the heat insulating member 111d and the bottom 540 of the groove 54e.

[0041] [Manufacturing Procedure of Main Body 111] Fig. 5 is a flowchart showing an example of a manufacturing procedure of the main body 111 of the substrate support 11. Fig. 5 illustrates an example of a manufacturing procedure of a part of the main body 111. The procedure illustrated in Fig. 5 is an example of a method for manufacturing a member.

[0042] First, a structure is prepared in which the RF plate 1112 is fastened to the support base 1113 and the base 1110 is fastened to the RF plate 1112, and the heat insulating member 111d is placed in the groove 54 on the upper surface of the base 1110 (S10). Step S10 is an example of process a). In step S10, the heat insulating member 111d is placed in each of the grooves 54 formed around the openings 52c, 52e, and 52f on the upper surface of the base 1110.

[0043] Next, the O-ring 111c is placed on the heat insulating member 111d (S11). Step S11 is an example of step b). In step S11, the O-ring 111c is placed in the groove 54 at a position on the heat insulating member 111d and away from the side wall of the groove 54.

[0044] Next, the electrostatic chuck 1111 is placed on the base 1110 on which the O-ring 111c is arranged (S12). Then, the base 1110 and the electrostatic chuck 1111 are fastened together with a plurality of screws 50a (S13). Step S13 is an example of process c). Then, the manufacturing procedure for the main body 111 shown in this flowchart is completed.

[0045] The first embodiment has been described above. As described above, the member (main body 111) in this embodiment is a member used in a semiconductor manufacturing apparatus (plasma processing apparatus 1) and includes a first member (base 1110), a second member (electrostatic chuck 1111), and an annular seal (O-ring 111c). A first opening (opening 52) is formed in the first member. A second opening (opening 52) communicating with the first opening is formed in the second member. The annular seal is disposed between the first member and the second member. A groove (groove 54) is formed around the first opening on the surface of the first member facing the second member. The groove accommodates the annular seal. A heat insulating member (heat insulating member 111d) is provided between at least one of the first member and the second member and the annular seal. This makes it possible to provide a member that can maintain fluid sealing properties even in low-temperature environments.

[0046] In the above-described embodiment, the first member or the second member is controlled to a temperature below 0°C, and the heat insulating member is disposed between the O-ring and either the first member or the second member controlled to a temperature below 0°C, and the heat insulating member is made of modified silicone rubber. This allows the O-ring to maintain its sealing performance in a low-temperature environment.

[0047] In the above-described embodiment, the second member is an electrostatic chuck (electrostatic chuck 1111) configured to have a substrate placed on its upper surface, and the first member is a cooling plate (base 1110) configured to cool the substrate via the electrostatic chuck by a fluid flowing through the first opening, thereby making it possible to maintain the sealing performance of the O-ring in a low-temperature environment.

[0048] The embodiment described above is a semiconductor manufacturing apparatus having a mounting table (main body 111) equipped with the above-described members, which allows the sealing performance of the O-ring to be maintained in a low-temperature environment.

[0049] Furthermore, the manufacturing method of the member in the above-described embodiment includes steps a), b), and c). In step a), an insulating member is placed around a second opening formed on a surface of the second member facing the first member, or in a groove formed around a first opening formed on a surface of the first member facing the second member. In step b), an annular seal is placed in the groove in which the insulating member is placed. In step c), the first member and the second member are fastened together with the insulating member and the annular seal sandwiched therebetween. This makes it possible to provide a member that can maintain fluid sealing properties even in low-temperature environments.

[0050] Furthermore, the manufacturing method of the member in the above-described embodiment includes steps a), b), and c). In step a), an annular seal is placed around a second opening formed on a surface of the second member facing the first member, or in a groove formed around a first opening formed on a surface of the first member facing the second member. In step b), an insulating member is placed in the groove in which the annular seal is placed. In step c), the first member and the second member are fastened together with the insulating member and the annular seal sandwiched therebetween. This makes it possible to provide a member that can maintain fluid sealing properties even in low-temperature environments.

[0051] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0052] For example, in the embodiment described above, the heat insulating member 111 d is disposed in the groove 54 on the upper surface of the base 1110, the O-ring 111 c is disposed on the heat insulating member 111 d, and the electrostatic chuck 1111 is disposed on the base 1110 on which the heat insulating member 111 d and the O-ring 111 c are disposed. However, the disclosed technology is not limited to this. For example, as another embodiment, as shown in FIG. 6 , the O-ring 111 c may be disposed on the bottom 540 of the groove 54 formed in the lower surface of the electrostatic chuck 1111, the heat insulating member 111 d may be disposed below the O-ring 111 c, and the electrostatic chuck 1111 on which the heat insulating member 111 d and the O-ring 111 c are disposed may be disposed on the base 1110, and the electrostatic chuck 1111 and the base 1110 may be fastened together. In this case, if the temperature of the electrostatic chuck 1111 is within the heat resistance temperature range of the O-ring 111c, the O-ring 111c may come into contact with the side wall 541 of the groove 54 within the groove 54. This makes it possible to easily position the O-ring 111c within the groove 54, and to easily assemble the main body 111 of the substrate support unit 11.

[0053] Furthermore, in the above-described embodiment, the heat insulating member 111d is disposed on the bottom 540 of the groove 54 of the base 1110, but the disclosed technology is not limited to this. For example, as another embodiment, as shown in Fig. 7, the heat insulating member 111d may be disposed on the bottom 540 and sidewall 541 of the groove 54 of the base 1110. This makes it possible to easily position the O-ring 111c within the groove 54, and to easily assemble the main body 111 of the substrate support unit 11.

[0054] In the above-described embodiment, the temperature of the electrostatic chuck 1111 is assumed to be within the heat-resistant temperature range of the O-ring 111c, for example. However, because the base 1110 and the electrostatic chuck 1111 are in contact with each other, the temperatures of both may be outside the heat-resistant temperature range of the O-ring 111c. In such a case, for example, as shown in FIG. 8 , an insulating member 111d may be further disposed on the underside of the electrostatic chuck 1111 at a position corresponding to the groove 54 of the base 1110. This prevents direct contact between the O-ring 111c and the electrostatic chuck 1111, thereby suppressing a decrease in the temperature of the O-ring 111c. Note that, in FIG. 8 , the insulating member 111d disposed in the groove 54 of the base 1110 may also be disposed on the bottom 540 and sidewalls 541 of the groove 54, as illustrated in FIG. 7 .

[0055] Furthermore, in the above-described embodiment, the arrangement of the heat insulating member 111d and the O-ring 111c between the base 1110 and the electrostatic chuck 1111 has been described, but the disclosed technology is not limited to this. As another embodiment, for example, it is preferable to arrange not only the O-ring 111c but also the heat insulating member 111d between the base 1110 and the RF plate 1112. FIG. 9 is a diagram showing another example of the arrangement of the O-ring 111c and the heat insulating member 111d. The temperature of the base 1110 may become less than 0°C (for example, −70°C or less) due to the fluid flowing through the flow path 1110a. On the other hand, since the RF plate 1112 does not have a flow path 1110a, the temperature of the RF plate 1112 may be within the heat resistance temperature range of the O-ring 111c. 9 , for example, a heat insulating member 111d may be disposed at a bottom 540 of a groove 54 formed in the lower surface of a base 1110, an O-ring 111c may be disposed below the heat insulating member 111d, the base 1110 on which the heat insulating member 111d and the O-ring 111c are disposed may be disposed on an RF plate 1112, and the base 1110 and the RF plate 1112 may be fastened together. In this case, the O-ring 111c may be disposed in the groove 54 at a position away from a side wall 541 of the groove 54. This may suppress a decrease in temperature of the O-ring 111c disposed between the base 1110 and the RF plate 1112.

[0056] 9, the heat insulating member 111d disposed in the groove 54 of the base 1110 may be disposed on the bottom 540 and the side wall 541 of the groove 54, as illustrated in FIG 7. Also in the example of FIG 9, a heat insulating member 111d may be further disposed on the upper surface of the RF plate 1112 at a position corresponding to the groove 54 of the base 1110, as in the example shown in FIG 8.

[0057] Although the above embodiment has been described using a mounting table (main body 111) as an example of a structure including a component, the structure including a component is not limited to a mounting table as long as it is a structure used in a semiconductor manufacturing apparatus (plasma processing apparatus 1). Another example of a structure including a component may be, for example, the shower head 13 included in the plasma processing apparatus 1 illustrated in FIG. 1 . FIG. 10 is a schematic cross-sectional view showing an example of the structure of the shower head 13. The shower head 13 is an example of an upper unit. The shower head 13 includes, for example, an electrode plate 130, a heating layer 131, a cooling plate 132, and an upper member 133. The electrode plate 130 and the heating layer 131 are formed with multiple gas inlets 13c. A heater 131a is embedded in the heating layer 131, and a heater power supply (not shown) is connected to the heater 131a. The cooling plate 132 is formed with a gas diffusion chamber 13b and a flow path 132a. The gas diffusion chamber 13b is connected to the gas supply unit 20 via a pipe 132d and a gas supply port 13a. The gas supplied from the gas supply unit 20 into the gas diffusion chamber 13b via the pipe 132d and the gas supply port 13a diffuses within the gas diffusion chamber 13b and is supplied into the plasma processing space 10s via the plurality of gas inlets 13c. The flow path 132a is connected to the pipes 132b and 132c. A coolant supplied from a chiller unit (not shown) is supplied into the flow path 132a via the pipe 132b, flows through the flow path 132a, and is returned to the chiller unit (not shown) via the pipe 132c.

[0058] Between the electrode plate 130 and the heating layer 131 (region B1 shown in FIG. 10 ), and between the heating layer 131 and the cooling plate 132 (region B2 shown in FIG. 10 ), O-rings are arranged around the outside of the region where the multiple gas inlets 13c are formed. Furthermore, between the cooling plate 132 and the upper member 133 (region B3 shown in FIG. 10 ), O-rings are arranged around each of the pipes 132b to 132d. In regions B1 to B3, O-rings and heat insulating members are arranged in the grooves where the O-rings are arranged, for example, in the same manner as in FIGS. 4 and 6 to 9 . This makes it possible to prevent deterioration of the sealing performance of the O-ring due to temperature changes in the showerhead 13.

[0059] Furthermore, while the above-described embodiment assumes a case in which at least one of the first and second members is below the heat resistance temperature of the O-ring, the disclosed technology can also be applied when at least one of the first and second members exceeds the heat resistance temperature of the O-ring (above 0°C, e.g., above 200°C). In this case, a heat insulating member is disposed between the O-ring and the first or second member whose temperature exceeds the heat resistance temperature of the O-ring. Such a heat insulating member can be, for example, a member made of polyimide or ceramic. Examples of the polyimide or ceramic member include a polyimide or ceramic nonwoven fabric or sheet. When a polyimide or ceramic nonwoven fabric or sheet is used as the heat insulating member, the thickness of the heat insulating member is preferably, for example, 100 μm to 2 mm to maintain heat insulation. Note that the O-ring and heat insulating member are disposed in the groove in which the O-ring is disposed, for example, in a manner similar to that shown in FIGS. 4 and 6 to 9.

[0060] Furthermore, in the above-described embodiment, the heat insulating member 111d is formed in advance to a shape that fits the groove 54 and is placed in the groove 54 of the base 1110, but the disclosed technology is not limited to this. As another embodiment, the heat insulating member 111d may be formed in the groove 54 by applying a liquid material to the inside of the groove 54 of the base 1110 and then curing the applied material. This makes it possible to easily place the heat insulating member 111d in the groove 54 in a shape that fits the groove 54 of any shape. For example, the heat insulating member placed between the member controlled to a temperature below 0°C and the O-ring may be made of modified silicone rubber, such as vinyl methyl silicone rubber or fluorovinyl methyl silicone rubber.

[0061] When the liquid material for forming the insulating member 111d is applied to the inside of the groove 54, the liquid material may contain a colorant (e.g., carbon-containing particles). This makes it easy to distinguish between the coated and uncoated areas when forming the insulating member 111d in the groove 54 by application. Furthermore, by applying the liquid material so that the color intensity of the liquid material is approximately the same, unevenness in the film thickness of the insulating member 111d can be suppressed.

[0062] Furthermore, in the above-described embodiment, a plasma processing apparatus 1 that processes a substrate W using plasma was used as an example, but the disclosed technology can also be applied to other processing apparatuses that do not use plasma, as long as they are apparatuses that process substrates W.

[0063] In the above embodiment, the plasma processing apparatus 1 is described as performing processing using a capacitively coupled plasma (CCP) as an example of a plasma source, but the plasma source is not limited to this. Examples of plasma sources other than the capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave-excited plasma (HWP).

[0064] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0065] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0066] (Supplementary Note 1) A member used in a semiconductor manufacturing apparatus, comprising: a first member having a first opening formed therein; a second member having a second opening formed therein communicating with the first opening; and an annular seal disposed between the first member and the second member, wherein a groove is formed around the first opening of the first member on a surface facing the second member, the groove accommodating the annular seal, and a heat insulating member is provided between at least one of the first member and the second member and the annular seal. (Supplementary Note 2) The member according to Supplementary Note 1, wherein the first member or the second member is controlled to a temperature below 0°C, the heat insulating member is disposed between the annular seal and one of the first member and the second member controlled to a temperature below 0°C, and the heat insulating member is made of modified silicone rubber. (Supplementary Note 3) The member according to Supplementary Note 1, wherein the first member or the second member is controlled to a temperature of 0°C or higher, the heat insulating member is disposed between the annular seal and one of the first member and the second member controlled to a temperature of 0°C or higher, and the heat insulating member is made of a polyimide or ceramic nonwoven fabric. (Supplementary Note 4) A mounting table including the member according to any one of Supplementary Notes 1 to 3, wherein the second member is an electrostatic chuck configured to have a substrate mounted on an upper surface thereof, and the first member is a cooling plate configured to cool the substrate via the electrostatic chuck by a fluid flowing through the first opening. (Appendix 5) A mounting table comprising the member described in any one of Appendices 1 to 3, wherein the second member is disposed on the first member, the mounting table further comprising an electrostatic chuck disposed on the second member and configured to have a substrate placed on its upper surface, the first member being an RF plate configured to be supplied with RF (Radio Frequency) power, and the second member being a cooling plate configured to cool the substrate via the electrostatic chuck by a fluid flowing through the first opening.(Supplementary Note 6) A mounting table comprising the member according to any one of Supplements 1 to 3, wherein the first member is a support base configured to support the second member, and the second member is an RF plate configured to be supplied with RF power. (Supplementary Note 7) A semiconductor manufacturing apparatus comprising the mounting table according to any one of Supplements 4 to 6. (Supplementary Note 8) An upper unit comprising the member according to any one of Supplements 1 to 3, wherein the first member is an electrode plate, and the second member is a heating layer. (Supplementary Note 9) A semiconductor manufacturing apparatus comprising the upper unit according to Supplementary Note 8. (Supplementary Note 10) A method for manufacturing a member, comprising the steps of: a) placing a heat insulating member in a groove formed around a second opening formed in a surface of a second member facing a first member, or around a first opening formed in a surface of the first member facing the second member, b) placing an annular seal in the groove in which the heat insulating member is placed, and c) fastening the first member and the second member together with the heat insulating member and the annular seal sandwiched between them. (Supplementary Note 11) A method for manufacturing a member, comprising the steps of: a) placing an annular seal in a groove formed around a second opening formed in a surface of a second member facing the first member, or around a first opening formed in a surface of the first member facing the second member, b) placing a heat insulating member in the groove in which the annular seal is placed, and c) fastening the first member and the second member together with the heat insulating member and the annular seal sandwiched between them. (Supplementary Note 12) The method for manufacturing a member according to Supplementary Note 10, wherein in the step a), a liquid material for forming the heat insulating member is applied to the groove and the applied material is hardened, thereby disposing the heat insulating member in the groove. (Supplementary Note 13) The method for manufacturing a member according to Supplementary Note 11, wherein in the step a), a liquid material for forming the heat insulating member is applied to the groove in which the annular seal is disposed and the applied material is hardened, thereby disposing the heat insulating member in the groove in which the annular seal is disposed. (Supplementary Note 14) The method for manufacturing a member according to Supplementary Note 12 or 13, wherein the liquid material for forming the heat insulating member contains a colorant.

[0067] W substrate 1 plasma processing apparatus 10 plasma processing chamber 10a side wall 10e gas exhaust port 10s plasma processing space 11 substrate support 11a cavity 11b cavity 11c cavity 11d cavity 11e cavity 11f cavity 111 main body 111a central region 111b annular region 111c O-ring 111d heat insulating member 1110 base 1110a flow path 1111 electrostatic chuck 1111a ceramic member 1111b electrostatic electrode 112 ring assembly 1112 RF plate 1113 support 13 shower head 13a gas supply port 13b gas diffusion chamber 13c gas inlet 130 electrode plate 131 heating layer 131a heater 132 Cooling plate 132a Flow path 132b Pipe 132c Pipe 132d Pipe 133 Upper member 20 Gas supply unit 21 Gas source 22 Flow rate controller 30 Power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a First DC generation unit 32b Second DC generation unit 40 Exhaust system 2 Control unit 2a Computer 2a1 Processing unit 2a2 Memory unit 2a3 Communication interface 50 Screw 51a Screw hole 52 Opening 54 Groove 540 Bottom 541 Side wall

Claims

1. A component used in semiconductor manufacturing equipment, comprising: a first component having a first opening formed therein; a second component having a second opening communicating with the first opening formed therein; and an annular seal disposed between the first component and the second component, wherein a groove is formed around the first opening of the first component on the surface facing the second component, the groove accommodating the annular seal, and a heat insulating member is provided between the annular seal and at least one of the first component and the second component.

2. The member according to claim 1, wherein the first member or the second member is controlled to a temperature below 0°C, the heat insulating member is disposed between the annular seal and one of the first and second members controlled to a temperature below 0°C, and the heat insulating member is made of modified silicone rubber.

3. The member according to claim 1, wherein the first member or the second member is controlled to a temperature of 0°C or higher, the heat insulating member is disposed between the annular seal and one of the first and second members controlled to a temperature of 0°C or higher, and the heat insulating member is made of a polyimide or ceramic nonwoven fabric.

4. A mounting table comprising a member according to any one of claims 1 to 3, wherein the second member is an electrostatic chuck configured to have a substrate placed on its upper surface, and the first member is a cooling plate configured to cool the substrate via the electrostatic chuck by a fluid flowing through the first opening.

5. A mounting table comprising a member according to any one of claims 1 to 3, wherein the second member is placed on the first member, the mounting table further comprising an electrostatic chuck that is placed on the second member and configured to have a substrate placed on its upper surface, the first member being an RF plate configured to be supplied with RF (Radio Frequency) power, and the second member being a cooling plate configured to cool the substrate via the electrostatic chuck by a fluid flowing through the first opening.

6. A mounting table comprising a member according to any one of claims 1 to 3, wherein the first member is a support base configured to support the second member, and the second member is an RF plate configured to be supplied with RF power.

7. A semiconductor manufacturing device equipped with the mounting table according to claim 4.

8. An upper unit comprising a member according to any one of claims 1 to 3, wherein the first member is an electrode plate, and the second member is a heating layer.

9. A semiconductor manufacturing device comprising the upper unit according to claim 8.

10. A method for manufacturing a member, comprising the steps of: a) placing an insulating member in a groove formed around a second opening formed in a surface of a second member facing a first member, or around a first opening formed in a surface of the first member facing the second member; b) placing an annular seal in the groove in which the insulating member is placed; and c) fastening the first member and the second member together with the insulating member and the annular seal sandwiched between them.

11. A method for manufacturing a member, comprising the steps of: a) placing an annular seal in a groove formed around a second opening formed in a surface of a second member facing a first member, or in a groove formed around a first opening formed in a surface of the first member facing the second member; b) placing a heat insulating member in the groove in which the annular seal is placed; and c) fastening the first member and the second member together with the heat insulating member and the annular seal sandwiched between them.

12. A method for manufacturing a component as described in claim 10, wherein in step a), a liquid material for forming the insulating component is applied to the groove, and the applied material is hardened to place the insulating component in the groove.

13. A method for manufacturing a member as described in claim 11, wherein in step a), a liquid material for forming the insulating member is applied to the groove in which the annular seal is placed, and the applied material is hardened to place the insulating member in the groove in which the annular seal is placed.

14. The method for manufacturing a member according to claim 12 or 13, wherein the liquid material for forming the heat insulating member contains a coloring agent.

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