Substrate conveyance method, substrate conveyance device, and computer storage medium

Abstract

Provided is a substrate conveyance method using a conveyance arm that has a first substrate support section and a second substrate support section, the method including: a step in which a first correction amount for a delivery position is corrected on the basis of the position of a substrate on the first substrate support section; a step in which a delivery position pertaining to a first substrate is corrected on the basis of the first correction amount applied to the first substrate; a step in which the first substrate support section is moved to the corrected delivery position and the first substrate is delivered from the first substrate support section to a rotary processing device; a step in which the second substrate support section is moved to a predetermined reception position and the first substrate is received from the rotary processing device by the second substrate support section; a step in which a second correction amount for the delivery position is calculated on the basis of the position of the first substrate on the second substrate support section; and a step in which a delivery position pertaining to a second substrate conveyed after the first substrate is corrected on the basis of the second correction amount and the first correction amount applied to the second substrate.

Description

Substrate transport method, substrate transport device, and computer storage medium

[0001] The present disclosure relates to a substrate transport method, a substrate transport apparatus, and a computer storage medium.

[0002] Japanese Patent Application Laid-Open No. 2003-144222 discloses a technique for stopping a transport mechanism at a target position.

[0003] JP 2013-230036 A

[0004] The technology according to the present disclosure transports a substrate to a target position with high precision.

[0005] One aspect of the present disclosure is a substrate transport method using a transport arm having a first substrate support portion and a second substrate support portion, the method including: calculating a first correction amount for a transfer position based on a position of the substrate on the first substrate support portion; correcting the transfer position for the first substrate based on the first correction amount for the first substrate; moving the first substrate support portion to the corrected transfer position and transferring the first substrate from the first substrate support portion to a rotary processing device; moving the second substrate support portion to a predetermined receiving position and receiving the first substrate from the rotary processing device by the second substrate support portion; calculating a second correction amount for the transfer position based on the position of the first substrate on the second substrate support portion; and correcting the transfer position for the second substrate based on the second correction amount and the first correction amount for a second substrate transported after the first substrate.

[0006] According to the present disclosure, a substrate can be transported to a target position with high precision.

[0007] FIG. 1 is an explanatory diagram showing an outline of the internal configuration of a coating and developing system including a substrate transport device according to the present disclosure. FIG. 2 is a diagram showing an outline of the internal configuration of the coating and developing system on the front side. FIG. 3 is a diagram showing an outline of the internal configuration of the coating and developing system on the back side. FIG. 4 is a longitudinal sectional side view showing an outline of the internal configuration of the coating and developing system. FIG. 5 is a longitudinal sectional front view showing an outline of the internal configuration of the coating and developing system. FIG. 6 is a side view of the transport device. FIG. 7 is a top view of the transport device. FIG. 8 is a functional block diagram of a control device related to the transport of a wafer to a resist coating device. FIG. 9 is an explanatory diagram of a correction amount. FIG. 10 is an explanatory diagram of a delivery position after correction. FIG. 11 is an explanatory diagram of a correction amount. FIG. 12 is an explanatory diagram of a delivery position after correction. FIG. 13 is a diagram showing the positional relationship between a wafer on a second fork and a spin chuck at the delivery position. FIG. 14 is a flowchart for explaining an example of a transport flow by the transport device. FIG. 15 is a flowchart for explaining an example of a correction flow of the delivery position by the control device. FIG. 16 is a functional block diagram of a control device according to a second embodiment. FIG. 17 is a diagram showing an example of the positional relationship between the center point of a first wafer on the spin chuck, the center point of the spin chuck, the center point of a processed first wafer on the second fork, and the center point of an ideal wafer on the second fork. 23 is a diagram for explaining a second correction amount according to a third embodiment. FIG. 24 is a functional block diagram of a control device according to the third embodiment. FIG. 25 is a diagram for explaining a second correction amount according to the third embodiment. FIG. 26 is an explanatory diagram showing an outline of the internal configuration of another example of a coating and developing system including a substrate transport device according to the present disclosure. FIG. 27 is a diagram showing an outline of the configuration of the central part in the depth direction of the coating and developing system of FIG. 22. FIG. 28 is a diagram showing an outline of the configuration of a first stacking processing block. FIG. 29 is a side view showing an outline of the configuration of a main transport device.

[0008] In photolithography, a manufacturing process for semiconductor devices and the like, a series of processes is performed to form a desired resist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer"). The series of processes includes, for example, a resist coating process in which a resist solution is supplied onto a substrate to form a resist coating (hereinafter referred to as a "resist film"), and a post-exposure bake (PEB) process in which the substrate is heated after exposure to promote chemical reactions within the resist film exposed to a predetermined pattern. These processes are performed in a substrate processing system equipped with a substrate processing apparatus such as a resist coating apparatus and a substrate transport apparatus that transports the substrate to the substrate processing apparatus. The series of processes may also include a process for removing a coating film, such as a resist film, from the peripheral edge of the substrate (an EBR (Edge Bead Removal) process). The resist coating process and EBR process are performed while the substrate is rotating. That is, these processes are rotational processes in which the substrate is processed while being rotated.

[0009] The substrate transfer device also includes a transfer arm having a movable substrate support portion for supporting the substrate. After the substrate support portion holding the substrate moves to the transfer position, the substrate portion is lowered, etc., so that the substrate is transferred from the substrate support portion to the substrate placement portion of the substrate processing apparatus and placed thereon.

[0010] Among substrate processing apparatuses, rotary processing apparatuses that perform rotational processes such as EBR may be required to transport substrates to target positions with high precision, i.e., to place the substrate on the substrate placement unit with high positional precision. For example, in a rotary processing apparatus that performs EBR, the substrate must be placed on the substrate placement unit with high positional precision in order to remove a coating film on the peripheral edge of the substrate to a desired width. Therefore, in a rotary processing apparatus that performs EBR, the transfer position, which is the position (specifically, the horizontal position) of the substrate support unit of the transfer arm when the substrate is placed, is adjusted in advance.

[0011] However, even if the transfer position is adjusted in advance in this way, the transfer position may shift from the desired position over time, making it impossible to place the substrate in the appropriate position on the substrate holder of the rotary processing device. For example, in a substrate processing system, the housing in which the substrate transfer device is installed may expand due to the thermal influence of a heating device, causing the guide (i.e., rail) for moving the transfer arm of the substrate transfer device to deform, causing the transfer position of the substrate support unit to shift from the desired position.

[0012] Therefore, the technology according to the present disclosure transports the substrate to the target position with high precision.

[0013] Hereinafter, a substrate transfer apparatus and a substrate transfer method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0014] (First embodiment) <Coating and developing system> Fig. 1 is an explanatory diagram showing an outline of the internal configuration of a coating and developing system including a substrate transport device according to this embodiment. Figs. 2 and 3 are diagrams showing an outline of the internal configuration of the front and rear sides of the coating and developing system, respectively. Figs. 4 and 5 are a longitudinal side view and a longitudinal front view, respectively, showing an outline of the internal configuration of the coating and developing system.

[0015] 1 to 3, the coating and developing system 1 is an example of a substrate processing system and includes a cassette station 2 where a cassette C, which is a container capable of holding a plurality of wafers as substrates, is transported between the system and the outside, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processes such as resist coating. The coating and developing system 1 also includes an interface station 5 that is provided adjacent to the processing station 3 on the positive side in the Y direction (the right side in FIG. 1) and that transfers wafers W to and from an exposure device 4. The cassette station 2, processing station 3, and interface station 5 are integrally connected.

[0016] The cassette station 2 is divided into, for example, a cassette loading / unloading section 10 and a wafer transport section 11. For example, the cassette loading / unloading section 10 is provided at the end of the coating and developing system 1 on the negative side in the Y direction (the left side in FIG. 1 ). The cassette loading / unloading section 10 is provided with a cassette mounting table 12. A plurality of, for example, four mounting plates 13 are provided on the cassette mounting table 12. The mounting plates 13 are arranged in a row in the horizontal X direction (the up-down direction in FIG. 1 ). The cassettes C can be placed on these mounting plates 13 when they are loaded or unloaded from or to the outside of the coating and developing system 1.

[0017] The wafer transfer section 11 is provided with a transfer device 21 that is movable on a transfer path 20 that extends in the X direction (the vertical direction in FIG. 1 ). The transfer device 21 is also movable in the vertical direction and in the direction around the vertical axis (the θ direction), and can transfer wafers W between cassettes C on each mounting plate 13 and a transfer device in a third block G3 of the processing station 3, which will be described later.

[0018] The processing station 3 is provided with a plurality of blocks, e.g., first to fourth blocks G1, G2, G3, and G4, each equipped with various devices. For example, the first block G1 is provided on the front side of the processing station 3 (the negative side in the X direction in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive side in the X direction in FIG. 1). Furthermore, the third block G3 is provided on the cassette station 2 side of the processing station 3 (the negative side in the Y direction in FIG. 1), and the fourth block G4 is provided on the interface station 5 side of the processing station 3 (the positive side in the Y direction in FIG. 1).

[0019] 2, the first block G1 includes, arranged in this order from bottom to top, a plurality of liquid processing devices, for example, a development processing device 30 that performs development processing on wafers W, a lower anti-reflection coating forming device 31 that forms an anti-reflection coating (hereinafter referred to as a "lower anti-reflection coating") on the lower layer of a resist film on the wafer W, a resist coating device 32 that applies a resist liquid to the wafer W to form a resist film, and an upper anti-reflection coating forming device 33 that forms an anti-reflection coating (hereinafter referred to as an "upper anti-reflection coating") on the upper layer of the resist film on the wafer W. In this embodiment, the resist coating device 32 is configured to also perform EBR processing on the wafer W, i.e., it also serves as an edge removal device.

[0020] For example, four developing treatment devices 30, four lower anti-reflection coating forming devices 31, four resist coating devices 32, and four upper anti-reflection coating forming devices 33 are arranged horizontally. The number and arrangement of the developing treatment devices 30, the lower anti-reflection coating forming devices 31, the resist coating devices 32, and the upper anti-reflection coating forming devices 33 can be selected arbitrarily.

[0021] In the developing treatment device 30, the bottom anti-reflection coating forming device 31, the resist coating device 32, and the top anti-reflection coating forming device 33, a predetermined processing solution is supplied onto the wafer W by, for example, spin coating. In the spin coating method, a processing solution is discharged onto the wafer W from, for example, a discharge nozzle, and the wafer W is rotated to spread the processing solution over the surface of the wafer W. That is, the developing treatment device 30, the bottom anti-reflection coating forming device 31, the resist coating device 32, and the top anti-reflection coating forming device 33 are rotary processing devices that perform predetermined processing on a substrate while rotating the substrate. However, the wafer W is transported by the transport method according to the present disclosure only to the resist coating device 32, for example, where circumferential uniformity in the width of resist removal from the wafer periphery by EBR processing is required. Alternatively, the wafer W may be transported by the transport method according to the present disclosure to all of the developing treatment device 30, the bottom anti-reflection coating forming device 31, the resist coating device 32, and the top anti-reflection coating forming device 33.

[0022] 3, the second block G2 is provided with a vertical arrangement of heat treatment devices 40 for performing heat treatment such as heating and cooling of the wafer W, and adhesion devices 41 for improving the fixation of the resist liquid to the wafer W. The number and arrangement of these heat treatment devices 40 and adhesion devices 41 can also be selected arbitrarily.

[0023] For example, in the third block G3, a plurality of transfer devices 51 are provided in order from the bottom up, and in the fourth block G4, a plurality of transfer devices 61 are provided in order from the bottom up.

[0024] As shown in FIG. 1, a wafer transfer region R is formed in the region surrounded by the first block G1 to the fourth block G4.

[0025] Furthermore, a wafer transfer device 100 is provided adjacent to the third block G3 on the positive side in the X direction. The wafer transfer device 100 has a transfer arm 100a that is movable in, for example, the X direction, the θ direction, and up and down directions. The wafer transfer device 100 moves up and down while supporting the wafer W on the transfer arm 100a, and can transfer the wafer W to each delivery device in the third block G3.

[0026] The interface station 5 is provided with a wafer transfer device 110 and a delivery device 111. The wafer transfer device 110 has a transfer arm 110a that is movable in, for example, the Y direction, the θ direction, and the up and down direction. The wafer transfer device 110 supports a wafer W on, for example, the transfer arm 110a, and can transfer the wafer W between each delivery device in the fourth block G4, the delivery device 111, and the exposure device 4.

[0027] The wafer transfer region R will now be described in more detail. As shown in FIG. 4, the wafer transfer region R is configured by stacking four transfer regions R1 to R4 in order from the bottom up, and each of the transfer regions R1 to R4 is formed to extend in the direction from the third block G3 side toward the fourth block G4 side (the Y direction in FIG. 4). As shown in FIG. 5, a liquid treatment device such as a resist coating device 32 is disposed on one side of the width direction of the transfer regions R1 to R4 (the X direction in the figure), and a heat treatment device 40, for example, is disposed on the other side. In some cases, an adhesion device 41 or an edge exposure device 42 is disposed instead of the heat treatment device 40.

[0028] Each of the transfer regions R1 to R4 is provided with a transfer device 300 as a substrate transfer device for transferring substrates to various processing devices. The transfer device 300 transfers wafers W to a device (such as a resist coating device 32) adjacent to the transfer region in which the transfer device 300 is provided, among the transfer regions R1 to R4.

[0029] A liquid processing apparatus such as the resist coating apparatus 32 includes a spin chuck 201 that holds and rotates the wafer W and a discharge nozzle (not shown) that discharges the processing liquid onto the wafer W in order to supply the processing liquid to the entire surface of the wafer W by spin coating. The liquid processing apparatus also includes a cup 202 that surrounds the wafer W and collects the processing liquid that has splashed from the wafer W.

[0030] Heat treatment apparatus 40 includes, for example, a hot plate 401 for heating wafer W, a plate 402 for transferring wafer W between hot plate 401 and transfer apparatus 300 and for cooling wafer W, a rectifying plate 403 provided above hot plate 401, and exhaust units 404 and 405 for exhausting air from transfer regions R1 to R4 and heat treatment apparatus 40. Fan units 406 for exhausting air from transfer regions R1 to R4 are provided below the second, fourth, sixth, and eighth heat treatment apparatuses 40 from the top.

[0031] Furthermore, the processing station 3 of the coating and developing system 1 includes a housing 70. The above-mentioned devices are housed inside the housing 70. The housing 70 is also partitioned into transport areas. The housing 70 further includes a housing 71 that houses a fan device 406, a guide 301 (described later), and the like.

[0032] The coating and developing system 1 is also provided with at least one control device 500, as shown in FIG. 1 . The control device 500 processes computer-executable instructions that cause the coating and developing system 1 to perform the various processes described in this disclosure. The control device 500 may be configured to control each element of the coating and developing system 1 to perform the various processes described herein. In one embodiment, part or all of the control device 500 may be included in the coating and developing system 1. The control device 500 may include a processing unit, a storage unit, and a communication interface. The control device 500 is realized, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations to be performed, and to execute the read program to perform various control operations. This program may be stored in the storage unit in advance, or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media H, or a communication line connected to the communication interface. The storage medium H may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating and developing system 1 via a communication line such as a LAN (Local Area Network). The control device 500 also functions as a control unit for the transport device 300.

[0033] <Wafer Processing> Next, we will explain wafer processing performed using the coating and developing system 1 configured as described above. First, a cassette C containing multiple wafers W is loaded into the cassette station 2 of the coating and developing system 1, and the wafer transfer device 21 sequentially transfers each wafer W in the cassette C to the delivery device 51 in the third block G3 of the processing station 3.

[0034] Next, the wafer W is transferred to the heat treatment device 40 by the transfer device 300 in the transfer region R2 of the processing station 3, and the temperature adjustment process is performed by the heat treatment device 40.

[0035] After the temperature adjustment process, the wafer W is transferred by the transfer device 300 to the lower anti-reflection film forming device 31 , where a lower anti-reflection film is formed on the wafer W.

[0036] Next, the wafer W is transferred by the transfer device 300 into the heat treatment device 40 adjacent to the transfer region R2, where it is heated and temperature-controlled. Subsequently, the wafer W is transferred by the transfer device 300 to the adhesion device 41 adjacent to the transfer region R2, where it is subjected to adhesion processing.

[0037] Thereafter, the wafer W is transferred by the transfer device 300 to a transfer device 61 in the fourth block G4 adjacent to the transfer region R2. Next, the wafer W is transferred by the wafer transfer device 110 to another transfer device 61 in the fourth block G4 adjacent to the transfer region R3. The wafer W is then transferred by the transfer device 300 in the transfer region R3 to a resist coating device 32, where a resist film is formed on the wafer W. The same resist coating device 32 also performs EBR processing, whereby the resist film on the peripheral edge of the wafer W is removed in a circular ring shape centered on the wafer W.

[0038] Next, the wafer W is transferred by the transfer device 300 to the heat treatment device 40 adjacent to the transfer region R3, where it is subjected to a pre-bake process. Next, the wafer W is transferred by the transfer device 300 to the transfer device 51 in the third block G3 adjacent to the transfer region R3. Next, the wafer W is transferred by the wafer transfer device 110 to another transfer device 51 in the third block G3 adjacent to the transfer region R4. Thereafter, the wafer W is transferred by the transfer device 300 in the transfer region R4 to the top anti-reflection coating forming device 33, where a top anti-reflection coating is formed on the wafer W. Next, the wafer W is transferred by the transfer device 300 to the heat treatment device 40 adjacent to the transfer region R4, where it is heated and temperature-adjusted. Thereafter, the wafer W is transferred by the transfer device to the transfer device 61 in the fourth block G4 adjacent to the transfer region R4. Then, the wafer W is transferred by the wafer transfer device 110 to the exposure device 4, where it is subjected to an exposure process with a predetermined pattern.

[0039] Next, the wafer W is transferred by the wafer transfer device 110 to the transfer device 61 in the fourth block G4 adjacent to the transfer region R1. The wafer W is then transferred by the transfer device 300 in the transfer region R1 to the heat treatment device 40 adjacent to the transfer region R1, where it is subjected to post-exposure baking. The wafer W is then transferred by the transfer device 300 to the development treatment device 30, where it is subjected to development. After the development treatment, the wafer W is transferred by the transfer device 300 to another heat treatment device 40 adjacent to the transfer region R1, where it is subjected to post-bake. The wafer W is then transferred by the transfer device 300 to the transfer device 51 in the third block G3 adjacent to the transfer region R1. The wafer W is then transferred by the wafer transfer device 21 to the cassette C on the cassette mounting plate 13, where the series of wafer processing steps is completed.

[0040] <Conveying device 300> Next, the configuration of the conveying device 300 will be described with reference to Fig. 5 and using Fig. 6 and Fig. 7. Fig. 6 is a side view of the conveying device 300. Fig. 7 is a top view of the conveying device 300. Note that Fig. 6 and Fig. 7 omit illustration of some of the components of the conveying device 300, such as a frame, which will be described later.

[0041] As shown in FIGS. 1, 5, and 6, the transfer device 300 includes a guide 301 extending along the length of the transfer regions R1 to R4 (the Y direction in FIG. 5), and a transfer arm 300a that supports the wafer W and moves it in the horizontal direction (the X and Y directions in the drawings), the up-down direction, and the direction around the vertical axis (the θ direction).

[0042] 6 and 7 , the transport arm 300a has a frame 302 that moves along a guide 301, an elevator 303 that moves up and down along the frame 302, and a base 304 that rotates relative to the elevator 303. The transport arm 300a also has forks 305a and 305b. The forks 305a and 305b are examples of a first substrate support portion and a second substrate support portion that are configured to be movable and support a substrate, respectively, and move forward and backward relative to the base 304.

[0043] The fork 305a is formed in a generally C-shape with a diameter slightly larger than the wafer W. Pawls 310 that protrude inward and support the outer periphery of the wafer W are provided at multiple locations on the inside of the fork 305a. Each of the pawls 310 is provided with a suction hole (not shown) for suction-holding the wafer W. The fork 305b has a similar structure to the fork 305a.

[0044] Furthermore, the transport device 300 includes drive mechanisms 320, 320 that individually linearly move the first fork 305a and the second fork 305b in the forward and backward directions (X directions in the figure) relative to the base 304, and a drive mechanism 330 that rotates the base 304 relative to the lifting body 303, i.e., moves it in the θ direction. The transport device 300 also includes a drive mechanism 340 that raises and lowers the lifting body 303 along the frame 302, and a drive mechanism 350 that moves the frame 302 along the guide 301.

[0045] Each of the drive mechanisms 320 includes a motor 311 as a drive source that generates a drive force for moving the first fork 305 a and the second fork 305 b. Each of the drive mechanisms 320 is housed in a housing 306 that defines the outer shape of the base 304.

[0046] The drive mechanism 330 includes a motor 331 as a drive source that generates a drive force to rotate the base 304. The drive mechanism 330 is housed in a housing 307 that forms the outer shape of the lift body 303.

[0047] The drive mechanism 340 includes a motor 341 as a drive source that generates a drive force for raising and lowering the lifting body 303. The drive mechanism 340 is housed in a housing 308 that forms the outer shape of the frame 302.

[0048] The driving mechanism 350 includes the above-mentioned guide 301, and further includes a motor 351 as a driving source that generates a driving force to move the frame 302 along the guide 301. The driving mechanism 350 is housed in the above-mentioned housing 71. On top of the housing 71, a housing 72 that houses the hot plate 401 of the heat treatment device 40 and the like is stacked.

[0049] The motors 321 , 321 , 331 , 341 , and 351 of the drive mechanisms 320 , 320 , 330 , 340 , and 350 are controlled by a control device 500 .

[0050] Furthermore, the transfer device 300 has a detection unit 360 for detecting the horizontal position of the wafer W on the first fork 305 a or the second fork 305 b. The detection unit 360 has three or more (four in the illustrated example) light receiving and emitting units 361 for detecting the edge of the wafer W on the first fork 305 a or the second fork 305 b.

[0051] Each light receiving and emitting unit 361 has a light receiving sensor 362 and a light source 363. One of the light receiving sensor 362 and the light source 363 is disposed above the first fork 305a and the second fork 305b, which are retracted toward the base end, and the other is disposed below. In this example, the light receiving sensor 362 is disposed above.

[0052] The light receiving sensor 362 is, for example, a CCD line sensor, and is provided so as to cross the edge of the wafer W supported by the fork 305 a or 305 b in a plan view. In each light receiving and emitting unit 361, the light source 363 is provided so as to face the light receiving sensor 362. Each light source 363 is, for example, formed of LEDs arranged in a line.

[0053] Each light receiving sensor 362 and light source 363 is fixed to the base 304. Specifically, for example, the light receiving sensor 362 is supported on the base 304 via a support member (not shown), and the light source 363 is disposed on the upper surface of the base 304. Therefore, when the forks 305a and 305b move forward and backward, the light receiving sensor 362 and the light source 363 do not move. The detection result by the light receiving sensor 362 is output to the control device 500. The light source 363 is controlled by the control device 500.

[0054] <Controller 500> Figure 8 is a functional block diagram of the controller 500 related to the transfer of the wafer W to the resist coating device 32, which is a rotary processing device. Figures 9 to 12 are explanatory diagrams of the correction amount Δp1, the corrected transfer position P2, the correction amount Δp2, and the corrected transfer position P3, respectively, which will be described later. Figure 13 is a diagram showing the positional relationship between the wafer W on the second fork F2 at the transfer position and the spin chuck 201. In the following description, one of the forks 305a and 305b will be referred to as the first fork F1, and the other will be referred to as the second fork F2. In the following description, the position of the wafer W refers to the position of the center of the wafer W.

[0055] When transferring the wafer W to the resist coating device 32, the first fork F1 supporting the wafer W is moved from a standby position P0 on its base end side to a delivery position P1 above the spin chuck 201. Thereafter, the lift pins (not shown) in the resist coating device 32 are raised, and the k-th wafer W is delivered to the lift pins. Then, the first fork F1 is returned to the standby position P0, and the lift pins are lowered, and the wafer W is delivered to and held in the resist coating device 32 (specifically, the spin chuck 201). Thereafter, the resist coating device 32 performs a resist coating process and an EBR process on the wafer W.

[0056] The transfer position P1 is set in advance as follows. That is, when the position of the wafer W on the first fork F1 is appropriate, the transfer position P1 is set in advance so that the center point of the wafer W supported by the first fork F1 moved to the transfer position P1 is aligned with the center point of the spin chuck 201 in a plan view. However, there are cases where the position of the wafer W on the first fork F1 is not appropriate. Therefore, when the wafer W is transferred to the resist coating unit 32, the position FP1 of the wafer W on the first fork F1 is detected, and a correction amount (correction value) Δp1 (also referred to as the first correction amount Δp1) is calculated in accordance with the detection result. As shown in FIG. 9 , the correction amount Δp1 is calculated by subtracting the appropriate position FP1 of the wafer W on the first fork F1 from the detected position FP1 of the wafer W on the first fork F1. ０ Then, the transfer position P1 is corrected based on the correction amount Δp1, and the first fork F1 is moved to the corrected transfer position P2 as shown in FIG.

[0057] However, if the coating and developing system 1 continues to operate, for example, the influence of the hot plate 401 of the heat treatment device 40 causes heat to accumulate in the housing 71 that houses the guide 301 of the transfer device 300, causing the housing 71 to thermally expand. This causes the guide 301 to deform, and in a plan view, the center point of the wafer W supported by the first fork F1 that has been moved to the corrected delivery position P2 shifts from the center point of the spin chuck 201. As a result, when EBR processing is performed by the resist coating device 32, the removal width of the resist film on the peripheral edge of the wafer becomes non-uniform in the circumferential direction.

[0058] Therefore, in this embodiment, in addition to the above, the second fork F2 is moved to a predetermined receiving position P5, and then the wafer W that has been transferred from the first fork F1 to the resist coating unit 32 is moved to the second fork F2. The position FP2 of the wafer W on the second fork F2 is detected. If the corrected transfer position P2 is appropriate, the position FP2 of the wafer W on the second fork F2 will also be appropriate. However, if the corrected transfer position P2 is inappropriate, the position FP2 of the wafer W on the second fork F2 will also be inappropriate. That is, as shown in FIG. 11 , the position FP2 of the wafer W on the second fork F2 is not the appropriate position FP2 of the wafer W on the second fork F2. ０ To deviate.

[0059] Therefore, in this embodiment, a correction amount Δp2 of the transfer position is calculated based on the detection result of the position FP2 of the wafer W on the second fork F2. Specifically, the correction amount Δp2 is calculated by subtracting the appropriate position FP2 of the wafer W on the second fork F2 from the detected position FP2 of the wafer W on the second fork F2. ０ 12 , the correction amount Δp1 is calculated so as to compensate for the deviation from the correction amount Δp2. Then, for example, with respect to a second wafer W that is transferred after the wafer W (first wafer) for which the correction amount Δp2 has been calculated, the transfer position is corrected based on the correction amount Δp1 for the second wafer W and the correction amount Δp2 calculated for the first wafer W. As a result, when the second wafer W is transferred by the first fork F1, the first fork F1 is moved to a new corrected transfer position P3 based on the correction amounts Δp1 and Δp2 as shown in FIG. 12 , and the second wafer W is transferred from the first fork F1 to the resist coating device 32 (specifically, the spin chuck 201).

[0060] 8, the control device 500 includes a motor driver 510, a detection control unit 511, a position detection unit 521, a first correction amount calculation unit 522, a delivery position correction unit 523, a receiving position output unit 524, a second correction amount calculation unit 525, and a determination unit 526. For example, the position detection unit 521, the first correction amount calculation unit 522, the delivery position correction unit 523, the receiving position output unit 524, the second correction amount calculation unit 525, and the determination unit 526 are realized by the aforementioned processing unit reading and executing a program stored in the storage unit.

[0061] The motor driver 510 controls the motors 321, 321, 331, 341, and 351 of the drive mechanisms 320, 320, 330, 340, and 350. A pulse signal with a command pulse number corresponding to the corrected transfer position is input to the motor driver 510 from a transfer position correction unit 523. The motor driver 510 then controls the motors 321, 321, 331, and 351 so that a current corresponding to the number of pulses of the input pulse signal is supplied to the motors. The motors supplied with the current rotate at an amount corresponding to the current.

[0062] The detection control unit 511 controls the detection unit 360. Specifically, the detection control unit 511 controls the light receiving sensor 362 and the light source 363 of the detection unit 360. More specifically, the detection control unit 511 controls, for example, the operation timing of each CCD of the CCD sensor that constitutes the light receiving sensor 362 and the current supplied to the light source 363.

[0063] The position detection unit 521 detects the position FP1 of each wafer W on the first fork F1. Specifically, the position detection unit 521 calculates the position FP1 of each wafer W on the first fork F1 that has retreated to the standby position P0 for each wafer W based on the detection results by the detection unit 360. The position detection unit 521 also detects the position FP2 of each wafer W on the second fork F2 for each wafer W. Specifically, the position detection unit 521 calculates the position FP2 of each wafer W on the second fork F2 that has retreated to the standby position P0 for each wafer W based on the detection results by the detection unit 360. More specifically, for each wafer W that has been transferred from the first fork F1 to the resist coating unit 32 and then received by the second fork F2, the position detection unit 521 calculates the position FP2 of each wafer W on the second fork F2 that has retreated to the standby position P0 based on the detection results by the detection unit 360.

[0064] The first correction amount calculation unit 522 calculates a first correction amount Δp1 of the transfer position based on the detected position FP1 of the wafer W on the first fork F1 for each wafer W. The first correction amount Δp1 is calculated by multiplying the detected position FP1 of the wafer W on the first fork F1 by the appropriate position FP1 of the wafer W on the first fork F1 (for example, the ideal center position of the wafer W on the first fork F1, i.e., the center of gravity position of the multiple claws 310). ０ The calculation is performed to compensate for deviations from the

[0065] The transfer position correction unit 523 corrects the transfer position based on at least the first correction amount Δp1. Specifically, the transfer position correction unit 523 calculates a corrected transfer position P2 for the first wafer W based on the first correction amount Δp1 for the first wafer W and a predetermined transfer position P1. More specifically, the transfer position correction unit 523 adds together a first correction pulse number, which is the number of pulses corresponding to the calculated first correction amount Δp1 for the first wafer W, and a specified transfer pulse number, which is the number of pulses corresponding to the predetermined transfer position P1, to calculate a command pulse number pl2 corresponding to the corrected transfer position P2 for the first wafer W. Prior to this, the transfer position correction unit 523 calculates the first correction pulse number based on a predetermined correspondence relationship between the first correction amount and the number of pulses and the first correction amount Δp1 for the first wafer W calculated by the first correction amount calculation unit 522. The number of command pulses pl2 includes, for example, a number of command pulses pl2x related to the advance / retract direction of the first fork F1 and the second fork F2 (hereinafter referred to as the "x direction") and a number of command pulses pl2y related to the direction along the guide 301 (hereinafter referred to as the "y direction"). The calculation result by the transfer position corrector 523 (specifically, a pulse signal of the number of command pulses pl2 corresponding to the corrected transfer position P2 for the first wafer W) is output to the motor driver 510. As a result, a current corresponding to the number of command pulses pl2 is supplied to the motor 321 and the motor 351 corresponding to the first fork F1, and the first fork F1 supporting the first wafer W is moved to the corrected transfer position P2.

[0066] The receiving position output unit 524 outputs the receiving position P5 to the motor driver 510. Specifically, the receiving position output unit 524 calculates a specified number of receiving pulses, which is the number of pulses corresponding to the predetermined receiving position P5, and sets the number of command pulses pl5, which is the number of pulses corresponding to the receiving position P5, as the number of command pulses pl5. This number of command pulses pl5 includes, for example, a number of command pulses pl5x in the x direction and a number of command pulses pl5y in the y direction. The receiving position output unit 524 also outputs the number of command pulses pl5 corresponding to the receiving position P5 to the motor driver 510. As a result, a current according to this number of command pulses pl5 is supplied to the motor 321 and motor 351 corresponding to the second fork F2, and the second fork F2 is moved to the receiving position P5.

[0067] The second correction amount calculation unit 525 calculates a second correction amount (correction value) Δp2 of the transfer position, i.e., an additional correction amount, based on the detection result (by the position detection unit 521) of the position FP2 on the second fork F2 of the first wafer W that was received by the second fork F2 after being delivered from the first fork F1 to the resist coating unit 32. Note that, hereinafter, the "position FP2 on the second fork F2 of the first wafer W that was received by the second fork F2 after being delivered from the first fork F1 to the resist coating unit 32" may be referred to as the "position FP2 of the processed first wafer W on the second fork F2," etc. The second correction amount Δp2 is calculated by subtracting the detected position FP2 of the processed first wafer W on the second fork F2 from the appropriate position FP2 of the wafer W on the second fork F2 (for example, the ideal center of the wafer W on the second fork F2, i.e., the center of gravity of the multiple claws 310). ０ is calculated to compensate for deviations from

[0068] Even if the corrected transfer position P2 on the first fork F1 is appropriate, the position of the processed first wafer W on the second fork F2 may deviate from the appropriate position. For example, as shown in FIG. 13 , even if the position (center) C1 of the first wafer W on the spin chuck 201 transferred from the first fork F1 is aligned with the center point C2 of the spin chuck 201, the position (center) C3 of the processed first wafer W on the second fork F2 may deviate from the ideal position (center) C4 of the wafer W on the second fork F2. That is, the ideal center point C4 of the wafer W on the second fork F2 at the receiving position may deviate from the center point C2 of the spin chuck 210. The second correction amount calculation unit 525 may apply an offset to the position FP2 of the processed first wafer W on the second fork F2 to account for this deviation. Then, the second correction amount calculation unit 525 may calculate a second correction amount Δp2 of the transfer position so as to compensate for the deviation of the position FP2' of the processed first wafer W on the offset second fork F2 from a predetermined appropriate position.

[0069] The second correction amount calculation unit 525 may also calculate the second correction amount Δp2 of the transfer position based on (the detection result of) the position FP2 on the second fork F2 of each of the first wafers W that were transferred from the first fork F1 to the resist coating unit 32 and then received by the second fork F2. Specifically, the second correction amount calculation unit 525 may calculate representative positions on the second fork F2 of the most recent N wafers W (N is a natural number greater than or equal to 2) from the detection result, and calculate the second correction amount Δp2 of the transfer position from the representative positions. The representative positions may be, for example, average positions. Furthermore, the second correction amount calculation unit 525 may apply the above-described offset to the representative positions on the second fork F2 of the first wafers W.

[0070] The transfer position correction unit 523 also corrects the transfer position of the second wafer W, which is transferred after the first wafer W. Specifically, the transfer position correction unit 523 corrects the transfer position for the second wafer W based on the second correction amount Δp2 and the first correction amount Δp1 for the second wafer W. More specifically, the transfer position correction unit 523 calculates a new corrected transfer position P3 as the transfer position for the second wafer W based on the second correction amount Δp2, the first correction amount Δp1 for the second wafer W, and the predetermined transfer position P1. More specifically, the transfer position correction unit 523 adds the first correction pulse number corresponding to the first correction amount Δp1 for the second wafer W calculated by the first correction amount calculation unit 522, the above-mentioned specified transfer pulse number, and the second correction pulse number, which is the number of pulses corresponding to the second correction amount Δp2, to calculate a command pulse number pl3 corresponding to the new corrected transfer position P3. The number of command pulses pl3 includes, for example, a number of command pulses pl3x in the x direction, a number of command pulses pl3y in the y direction, and a number of command pulses pl3θ in the rotation direction (θ direction) of the base 304. A pulse signal of the number of command pulses pl3 corresponding to the new corrected transfer position P3 is output to the motor driver 510. As a result, currents according to the number of command pulses pl3 are supplied to the motors 321, 331, and 351 corresponding to the first fork F1, and the first fork F1 supporting the second wafer W is moved to the corrected transfer position P3.

[0071] The motor driver 510 functions as a first movement control unit that moves the first fork F1 to the delivery position P2 corrected by the delivery position correction unit 523 and transfers the first wafer W from the first fork F1 to the resist coating device 32. The motor driver 510 also moves the first fork F1 to the delivery position P3 corrected by the delivery position correction unit 523 and transfers the second wafer W from the first fork F1 to the resist coating device 32. The motor driver 510 also functions as a second movement control unit that moves the second fork F2 to a predetermined receiving position after the first wafer W is transferred from the first fork F1 to the resist coating device 32 and transfers the first wafer W transferred from the first fork F1 to the resist coating device 32 by the second fork F2.

[0072] The motor driver 510 also performs control as follows: After the wafer W delivered from the first fork F1 to the resist coating device 32 is received by the second fork F2, when the second fork F2 retreats from the receiving position P5 to the standby position at the base end, the motor driver 510 simultaneously controls the first fork F1 supporting the next wafer W to proceed from the standby position at the base end to the delivery position P1, the corrected delivery position P2, or the new corrected delivery position P3.

[0073] The determination unit 526 determines whether or not to correct the transfer position for the second wafer W based on the second correction amount calculated by the second correction amount calculation unit 525. Specifically, the determination unit 526 determines whether or not to correct the transfer position for the second wafer W based on the second correction amount Δp2, based on the second correction amount calculated by the second correction amount calculation unit 525 and a predetermined threshold. For example, if the second correction amount is between a predetermined first threshold Th1 and a predetermined second threshold Th2 (Th2>Th1), the determination unit 526 determines to correct the transfer position for the second wafer W based on the second correction amount Δp2, and otherwise determines not to correct the transfer position for the second wafer W based on the second correction amount Δp2. Then, only when the determination unit 526 determines that the transfer position should be corrected based on the second correction amount Δp2, the transfer position correction unit 523 corrects the transfer position for the second wafer W based on the second correction amount Δp2 and the first correction amount Δp1 for the second wafer W. On the other hand, when the determination unit 526 determines that the transfer position should not be corrected based on the second correction amount Δp2, the transfer position correction unit 523 corrects the transfer position based on the first correction amount Δp1 for the second wafer W without using the second correction amount Δp2.

[0074] <Transportation Flow> FIG. 14 is a flowchart illustrating an example of a transport flow by the transport device 300.

[0075] 9 , when the mth and (m+1)th wafers W are transferred to the resist coating device 32 after the start of processing by the resist coating device 32, the position detection unit 512 first detects the position FP1 of the mth wafer W on the first fork F1 (step S1). Specifically, after the first fork F1 receives the mth wafer W from the delivery device 61, the position detection unit 521 calculates the position FP1 of the mth wafer W on the first fork F1, which has retreated to a standby position on the base end side, based on the detection result by the detection unit 360.

[0076] Next, the first fork F1 supporting the wafer W is moved to the transfer position corrected by the transfer position corrector 523 (the corrected transfer position P2 or the corrected transfer position P3 described above) (step S2). Specifically, the number of command pulses corresponding to the corrected transfer position by the transfer position corrector 523 is output to the motor driver 510, and the motor driver 510 supplies currents corresponding to the number of command pulses corresponding to the corrected transfer positions to each motor. More specifically, for example, the motor driver 510 supplies a current corresponding to the command pulses in the y direction to the motor 351, thereby moving the first fork F1 supporting the m-th wafer W together with the frame 302 to the corrected transfer position in the y direction. Thereafter, the motor driver 510 supplies a current corresponding to the command pulses in the x direction of the m-th wafer W to the motor 321, thereby moving the first fork F1 supporting the m-th wafer W in the x direction to reach the corrected transfer position. Then, the m-th wafer W is transferred from the first fork F1 to the spin chuck 201 of the resist coating unit 32, and thereafter the first fork F1 is returned to the standby position P0.

[0077] Subsequently, the position detector 512 detects the position FP1 of the (m+1)th wafer W on the first fork F1 (step S3). Specifically, this is the same as step S1.

[0078] Thereafter, the second fork F2 not supporting a wafer W is moved to the receiving position, and the mth wafer W is received by the second fork F2 (step S4). Specifically, the lift pins of the resist coating device 32 move the mth wafer W above the spin chuck 201. Next, a command pulse number pl5 corresponding to a predetermined receiving position P5 is output to the motor driver 510, and the motor driver 510 supplies currents corresponding to the command pulse number pl5 corresponding to the receiving position P5 to each motor. The command pulse number pl5 includes a command pulse number pl5x for the x direction and a command pulse number pl5y for the y direction. In step S5, specifically, the motor driver 510 supplies currents corresponding to the command pulse number pl5y for the y direction to the motor 351, thereby moving the second fork F2 not supporting a wafer W together with the frame 302 to the receiving position P5y in the y direction. Thereafter, the motor driver 510 supplies a current corresponding to the number of command pulses p15x applied in the x direction to the motor 321, whereby the second fork F2 not supporting the wafer W moves in the x direction and reaches the receiving position P5. Then, the lifting pins are lowered, and the m-th wafer W is supported by the second fork F2.

[0079] Next, the first fork F1 supporting the (m+1)th wafer W is moved to the corrected transfer position (the corrected transfer position P2 or the corrected transfer position P3) by the transfer position corrector 523, and the second fork F2 supporting the mth wafer W is returned to the standby position P0 on its base end side (step S5). Specifically, the motor driver 510 supplies a current to the motor 351 in accordance with a command pulse corresponding to the corrected transfer position of the (m+1)th wafer W in the y direction, thereby moving the first fork F1 supporting the (m+1)th wafer W together with the frame 302 to the corrected transfer position in the y direction. Thereafter, the motor driver 510 supplies a current to the motor 321 corresponding to the first fork F1 in accordance with the number of command pulses corresponding to the corrected transfer position of the (m+1)th wafer W in the x direction, thereby moving the first fork F1 supporting the (m+1)th wafer W in the x direction to reach the corrected transfer position. Simultaneously with this movement, the motor driver 510 supplies a predetermined current to the motor 321 corresponding to the second fork F2, thereby returning the second fork F2 supporting the m-th wafer W to the standby position P0 on its base end side.

[0080] Next, the position detection unit 521 detects / calculates the position FP2 on the second fork F2 for the m-th wafer W (step S6). Specifically, similar to step S1, the position detection unit 512 detects the position FP2 of the m-th wafer W on the second fork F2, and then the m-th wafer W is transported to the delivery device 51 by the second fork F2.

[0081] Thereafter, the flow returns to step S3, and the processes from step S3 onward are carried out.

[0082] 15 and 16 are flowcharts for explaining an example of a flow of correcting the transfer position by the control device 500. Note that this correction is performed, for example, for each rotary processing device, and is performed separately for the case where the fork 305a is the first fork F1 and the case where the fork 305b is the first fork F1.

[0083] 15 , when correcting the transfer position of the n+1-th wafer W, first, the second correction amount calculation unit 525 acquires the position FP2 of the n-th wafer W on the second fork F2 (step S11). Specifically, the second correction amount calculation unit 525 acquires the position FP2 of the n-th wafer W on the second fork F2 detected / calculated by the position detection unit 521.

[0084] Thereafter, the second correction amount calculation unit 525 applies the aforementioned offset to the acquired position FP2 of the n-th wafer W on the second fork F2 (step S12).

[0085] Next, the second correction amount calculation unit 525 calculates a representative position on the second fork F2 for the most recent N wafers W including the n-th wafer W, and calculates a second correction amount Δp2 (step S13). Specifically, the second correction amount calculation unit 525 calculates an average value of the positions of the most recent N wafers W offset in step S12, and sets this as the representative position, and calculates the second correction amount Δp2 from the representative position and a reference position (for example, the center point of the ideal wafer W on the second fork F2).

[0086] The first correction amount calculation unit 522 also acquires the position FP1 of the (n+1)th wafer W on the first fork F1 (step S14). Specifically, the first correction amount calculation unit 522 acquires the position FP1 of the (n+1)th wafer W on the first fork F1 detected / calculated by the position detection unit 521.

[0087] Furthermore, the determining unit 526 determines whether the (n+1)th wafer W is the (N+2)th or subsequent wafer W (step S15).

[0088] If the wafer W is not the (N+2)th or later wafer W (if NO), correction based on the second correction amount Δp2 is not performed for the (n+1)th wafer W. Specifically, the first correction amount calculation unit 522 calculates the first correction amount Δp1 of the transfer position based on the acquired position FP1 of the (n+1)th wafer W on the first fork F1 (step 16).

[0089] Subsequently, the transfer position correcting unit 523 calculates the corrected transfer position P2 for the (n+1)th wafer W based on the first correction amount Δp1 calculated in step S7 (step S17).

[0090] Specifically, the transfer position correction unit 523 calculates a corrected transfer position P2 for the (n+1)th wafer W based on the first correction amount Δp1 and the predetermined transfer position P1. More specifically, the transfer position correction unit 523 adds a first correction number of pulses Δp1, which is the number of pulses corresponding to the first correction amount Δp1, to a specified number of transfer pulses pl1, which is the number of pulses corresponding to the predetermined transfer position P1, to calculate a command number of pulses pl2 corresponding to the corrected transfer position P2 for the (n+1)th wafer W. The first correction number of pulses Δp11 includes a first correction number of pulses Δp1x in the x direction and a first correction number of pulses Δp1y in the y direction. The specified number of transfer pulses pl1 includes a specified number of transfer pulses pl1x in the x direction and a specified number of transfer pulses pl1y in the y direction. The number of command pulses pl2 includes a number of command pulses pl2x in the x direction and a number of command pulses pl2y in the y direction. The number of command pulses pl2x in the x direction is the sum of the first correction number of pulses Δpl1x in the x direction and the specified number of pulses for delivery pl1x in the x direction. The number of command pulses pl2y in the y direction is the sum of the first correction number of pulses Δpl1y in the y direction and the specified number of pulses for delivery pl1y in the y direction.

[0091] Then, the flow returns to step S11, and the steps from step S11 onwards are performed for the (n+2)th wafer W.

[0092] On the other hand, in step S15, if it is determined that the n+1th wafer W is the (N+2)th wafer W or later (if YES), as shown in FIG. 16, it is determined whether or not to perform correction based on the second correction amount Δp2 for the n+1th wafer W, based on the second correction amount Δp2 and a predetermined threshold value (step S18).

[0093] For the n+1th wafer W, if the second correction amount Δp2 is not between the predetermined first threshold value Th1 and the predetermined second threshold value Th2 (Th2 > Th1), it is determined that correction based on the second correction amount Δp2 will not be performed (step S18, NO), and the flow proceeds to step S16.

[0094] On the other hand, for the n+1th wafer W, if the second correction amount Δp2 is between the predetermined first threshold value Th1 and the predetermined second threshold value Th2, the judgment unit 526 judges that correction based on the second correction amount Δp2 will be performed (step S18, YES).

[0095] Thereafter, the first correction amount calculation unit 522 calculates the first correction amount Δp1 of the transfer position based on the acquired position FP1 of the (n+1)th wafer W on the first fork F1 (step 19).

[0096] Next, the transfer position correction unit 523 calculates a new corrected transfer position P3 for the (n+1)th wafer W based on the first correction amount Δp1 calculated in step S19 and the second correction amount Δp2 calculated in step S13 (step S20). Specifically, the transfer position correction unit 523 calculates a new corrected transfer position P3 for the (n+1)th wafer W based on the first correction amount Δp1, the second correction amount Δp2, and the predetermined transfer position P1. More specifically, the transfer position correction unit 523 adds the second correction number of pulses Δpl2, which is the number of pulses corresponding to the second correction amount Δp2, to the first correction number of pulses Δpl1 and the specified number of transfer pulses pl1 described above, to calculate a command number of pulses pl3 corresponding to the new corrected transfer position P3 for the (n+1)th wafer W. The second correction pulse number Δpl2 includes a second correction pulse number Δpl2x in the x direction and a second correction pulse number Δpl2θ in the θ direction. These are calculated, for example, based on the representative position acquired in step S13. The command pulse number pl3 includes a command pulse number pl3x in the x direction, a command pulse number pl3y in the y direction, and a command pulse number pl3θ in the θ direction. The command pulse number pl3x in the x direction is the sum of the first correction pulse number Δpl1x in the x direction, the second correction pulse number Δpl2x in the x direction, and the specified number of pulses for transfer pl1x in the x direction. The command pulse number pl3y in the y direction is the sum of the first correction pulse number Δpl1y in the y direction and the specified number of pulses for transfer pl1y in the y direction. The command pulse number pl3θ in the θ direction is the second correction pulse number Δpl2θ in the θ direction. That is, the correction based on the second correction amount Δp2 is added to the x and θ directions.

[0097] Then, the flow returns to step S11, and the steps from step S11 onwards are performed for the (n+2)th wafer W.

[0098] When the number of command pulses pl3 corresponding to the new corrected transfer position P2 is output to the motor driver 510, a current corresponding to the number of command pulses pl3 is supplied to each motor. Specifically, the motor driver 510 supplies a current corresponding to the number of command pulses pl3y in the y direction to the motor 351, thereby moving the first fork F1 supporting the wafer W together with the frame 302 to the corrected transfer position P3y in the y direction. Thereafter, the motor driver 510 supplies a current corresponding to the number of command pulses pl3x in the x direction to the motor 321 and a current corresponding to the number of command pulses pl3θ in the θ direction to the motor 331. As a result, the first fork F1 supporting the wafer W moves to the new corrected transfer position P3. Furthermore, when it is determined that correction based on the second correction amount Δp2 should be performed, the second correction amount Δp2 used for correcting the transfer position of the (n+2)th wafer W is also used to correct the transfer positions of the (n+3)th and subsequent wafers W.

[0099] <Major Effects of the Present Embodiment> As described above, when the transfer position is corrected based on the first correction amount based on the position of the wafer W on the first fork F1, the first fork F1 is moved to the corrected transfer position, and the wafer W is then transferred from the first fork F1 to the resist coating device 32 (specifically, the spin chuck 201), the wafer W may deviate from the desired position due to thermal expansion of the housing 71, etc. Specifically, the center point of the wafer W may deviate from the center point of the spin chuck 201. That is, the corrected transfer position may deviate from the target position. Therefore, in the present embodiment, the second fork F2 receives the first wafer W transferred from the first fork F1 at the transfer position P2 corrected based on the first correction amount. The deviation of the position of the first wafer W on the second fork F2 from the appropriate position corresponds to the deviation from the target position described above. Therefore, in the present embodiment, the second correction amount of the transfer position is calculated based on the detection result of the position of the first wafer W on the second fork F2. Then, for the second wafer W transferred after the first wafer W, the transfer position of the first fork F1 is corrected based on the second correction amount and the first correction amount for the second wafer W, resulting in a new corrected transfer position P3. Therefore, even if the first wafer W is moved to the corrected transfer position P2 and then transferred from the first fork F1 to the resist coating device 32, as described above, the second wafer W can be placed at a more appropriate position. Furthermore, a problem similar to that caused by thermal expansion of the housing 71 may occur due to idlers provided for the motors 321 and 351 in the drive mechanism 320 for the forks 305a and 305b or the drive mechanism 350 for the frame 302 being out of round. According to this embodiment, even if this problem occurs, it can be mitigated or eliminated.

[0100] Furthermore, in this embodiment, after the wafer W delivered from the first fork F1 to the resist coating device 32 is received by the second fork F2, when the second fork F2 retreats from the receiving position P5 to the waiting position P0, the first fork F1 supporting the next wafer W simultaneously advances to the delivery position. Therefore, when the first fork F1 stops at the delivery position, the inertial force acting on the first fork F1 is reduced, and therefore, it is possible to prevent the first fork F1 from shifting from the delivery position due to the inertial force.

[0101] Furthermore, in this embodiment, the second correction amount calculation unit 525 calculates the second correction amount Δp2 based on the position of each of the first wafers W on the second fork F2 that are received by the second fork F2 after being transferred from the first fork F1 to the resist coating unit 32. Specifically, the second correction amount calculation unit 525 calculates the second correction amount Δp2 based on a representative value (more specifically, an average value) of the positions of the wafers W on the second fork F2 for the multiple wafers W that are received by the second fork F2 after being transferred from the first fork F1 to the resist coating unit 32. Therefore, when an unexpected deviation occurs, the deviation is unlikely to be reflected in the second correction amount Δp2, and it is possible to prevent the deviation from preventing appropriate correction.

[0102] Furthermore, in this embodiment, the determination unit 526 determines, based on the second correction amount Δp2 and a predetermined threshold, whether to correct the transfer position for the second wafer W based on the second correction amount Δp2. For example, only when the determination unit 526 determines that the second correction amount Δp2 does not exceed the second threshold Th2, the second correction amount Δp2 is used to correct the transfer position for the second wafer W. Therefore, excessive correction is not performed, and it is possible to prevent the first fork F1 from colliding with components of the resist coating device 32, which would otherwise occur.

[0103] Second Embodiment FIG. 17 is a functional block diagram of a control device 500 according to a second embodiment. As the coating and developing system 1 continues to operate and the drive mechanism 320, which drives the movement of the fork 305a, repeatedly performs a transport operation, the temperature of the motor 321 rises, and heat builds up inside the housing 306 of the base 304, causing the housing 306 to thermally expand. This increases the distance between the pulleys constituting the drive mechanism 320 provided in the housing 306, stretching the drive belt and increasing the amount of movement of the fork 305a per pulse. As a result, the transport position of the fork 305a may shift. Furthermore, as heat accumulation in the housing 306 progresses, the shift increases, but eventually the thermal expansion of the housing 306 saturates, and the increase in the amount of shift reaches a plateau.

[0104] 17, the control device 500 according to this embodiment has, in addition to the configuration of the control device 500 according to the first embodiment, an acquisition unit 530 and a compensation amount calculation unit 531. The acquisition unit 530 and the compensation amount calculation unit 531 are realized, for example, by the above-mentioned processing unit reading and executing a program stored in the storage unit.

[0105] The acquisition unit 530 acquires drive data at different times that is related to the drive of the motor 321 that drives the movement of the first fork F1 and that fluctuates due to heat generated by the motor 321. Specifically, the acquisition unit 530 acquires torque data of the motor 321 at different times as the drive data. More specifically, the acquisition unit 530 acquires torque data output from the motor 321, for example, every 10 milliseconds, sequentially integrates the acquired data, and calculates an integrated value X for a certain period, for example, 10 seconds, as one interval. Therefore, the acquired torque data is sequentially designated x1, x2, ..., x10. ３ Then, the integrated value X is 10 of them ３ Furthermore, the acquisition unit 530 multiplies the integrated value X by 10, which is the number of pieces of torque data acquired in the section. ３ Divide by this to get the interval average value, X / 10 ３As the heat generated by the motor 321 increases, the torque output from the motor 321 during operation increases.

[0106] The compensation amount calculation unit 531 calculates the compensation amount for compensating for positional deviation caused by heat generation of the motor 321 that drives the movement of the first fork F1, based on the drive data acquired by the acquisition unit 530.

[0107] Specifically, the compensation amount calculation unit 531 calculates the torque interval average value X / 10 ３ The compensation amount calculation unit 531 calculates the ratio of the torque M of the motor 321 to the previously acquired maximum torque value M as a percentage. This percentage value will be referred to hereinafter as the torque ratio. This torque ratio is integrated correspondence data corresponding to the integrated torque value. The compensation amount calculation unit 531 acquires this torque ratio for each of the first section and the second section following the first section. The compensation amount calculation unit 531 then calculates the compensation amount based on previously acquired information regarding the expected transition of the torque ratio and the torque ratios in the first and second sections. Specifically, the compensation amount calculation unit 531 calculates an expected torque ratio by correcting the torque ratio in the first section using a predetermined calculation algorithm that uses the information regarding the expected transition and the torque ratios in the two sections. The compensation amount calculation unit 531 then calculates the compensation amount based on the previously acquired correspondence relationship between the expected torque ratio and the compensation amount and the calculated expected torque ratio.

[0108] In addition, the acquisition unit 530 and the compensation amount calculation unit 531 acquire drive data and calculate compensation amounts not only for the motor 321 that directly drives the movement of the first fork F1, but also for the motor 351 that indirectly drives the movement of the first fork F1.

[0109] In this embodiment, the transfer position correction unit 523 also uses information on the compensation amount calculated by the compensation amount calculation unit 531 as information on the correction of the transfer position. Specifically, when the second correction amount Δp2 is not used to correct the transfer position, the transfer position correction unit 523 corrects the transfer position based on the first correction amount Δp1 and the compensation amount. On the other hand, when the second correction amount Δp2 is used to correct the transfer position, the transfer position correction unit 523 corrects the transfer position based on the first correction amount Δp1, the second correction amount Δp2, and the compensation amount.

[0110] According to this embodiment, it is possible to prevent the transfer position from shifting due to heat generated by the motor of the drive mechanism that directly or indirectly drives the first fork F1.

[0111] Third Embodiment Fig. 18 is a diagram showing an example of the positional relationship between the position (center) C1 of the first wafer W on the spin chuck 201, the center point C2 of the spin chuck 201, the position (center) C3 of the processed first wafer W on the second fork F2, and the ideal position (center) C4 of the wafer W on the second fork F2. Figs. 19 and 21 are diagrams for explaining the second correction amount Δp2 according to this embodiment. Fig. 20 is a functional block diagram of the control device 500 according to the third embodiment. When the coating and developing system 1 continues to operate, for example, the guide 301 of the transfer device 300 is deformed due to the influence of the heat plate 401 of the heat treatment device 40. As a result, as shown in FIG. 18, even though the position (center) C1 of the wafer W on the spin chuck 201 does not align with the center point C2 of the spin chuck 201, the position (center) C3 of the processed first wafer W on the second fork F2 may align with the ideal position (center) C4 of the wafer W on the second fork F2, i.e., the appropriate position C4, and the second correction amount Δp2 may become zero.

[0112] 19 , the spin chuck 201 is rotated, for example, by 180°, and then the second fork F2 receives the first wafer W from the spin chuck 201. Then, half of the deviation δ of the position (center) C5 of the rotated first wafer W on the second fork F2 from the appropriate position C4 is set as the second correction amount (correction value) Δp2. If this second correction amount Δp2 is used to correct the transfer position of the second wafer W, the second wafer W can be placed at a more appropriate position on the spin chuck 201.

[0113] 20, the control device 500 according to this embodiment has a rotation control unit 540 in addition to the configuration of the control device 500 according to the first embodiment. The rotation control unit 540 may be realized by the processing unit described above reading and executing a program stored in the storage unit.

[0114] The rotation control unit 540 controls the rotation of the resist coating unit 32, which is a rotation processing device, and specifically controls the rotation of the spin chuck 201. In particular, the rotation control unit 540 rotates the first wafer W by a predetermined angle Θ (e.g., 180°) around the center of the spin chuck 201 in the resist coating unit 32 so that the first wafer W when received by the second fork F2 is different from when transferred from the first fork F1. The angle Θ may be an angle other than 180°.

[0115] Therefore, the position FP2 of the first wafer W on the second fork F2 detected by the position detector 521 is the position of the first wafer W rotated by the predetermined angle Θ as described above.

[0116] In this embodiment, the second correction amount calculation unit 525 calculates the second correction amount Δp2 of the transfer position based on the detection result of the position FP12 of the rotated first wafer W on the second fork F2 and the angle Θ of rotation of the first wafer W by the rotation control unit 540. For example, when the angle Θ is 180°, the second correction amount calculation unit 525 sets half the deviation amount δ of the position of the rotated first wafer W on the second fork F2 from an appropriate position (e.g., the center point of the ideal wafer W on the second fork F2) as the second correction amount Δp2.

[0117] When the angle Θ is other than 180°, the second correction amount calculation unit 525 calculates an appropriate position FP2 of the wafer W on the second fork F2 from the detection result of the position of the rotated first wafer W on the second fork F2, as shown in FIG. ０ Based on this, that is, in the arm coordinate system, the second correction amount calculation unit 525 calculates a position FP12 (X2, Y2) of the first wafer W on the second fork F2 after rotation. In addition, the second correction amount calculation unit 525 calculates a position FP11 (X1, Y1) of the first wafer W on the spin chuck 201 without rotation, which satisfies the following four equations: X2-X1=A Y2-Y1=B Y2(1-sin(90-Θ))=B+X2*cos(90-Θ) X2(1-sin(90-Θ))=A+Y2*cos(90+Θ)

[0118] Furthermore, the second correction amount calculation unit 525 calculates, from the positions FP11 and FP12 and the angle Θ, a rotation center FP13 of the first wafer W, which corresponds to the center of the spin chuck 201. Then, the second correction amount calculation unit 525 calculates a second correction amount ΔP2 to compensate for deviation of the first wafer W from the rotation center F13 when the spin chuck 201 is not rotated.

[0119] Based on the second correction amount Δp2 for the first wafer W, the transfer position correction unit 523 corrects the transfer position for the second wafer W. Information on the compensation amount calculated by the compensation amount calculation unit 531 is also used as information on the correction of the transfer position.

[0120] <Another Example of Coating and Developing System> Fig. 22 is an explanatory diagram showing an outline of the internal configuration of a coating and developing system including a substrate transport device according to this embodiment. Fig. 23 is a diagram showing an outline of the configuration of a central part in the depth direction (X direction) of a coating and developing system 1A. Fig. 24 is a diagram showing an outline of the configuration of a first stacked processing block, which will be described later. Fig. 25 is a side view showing an outline of the configuration of a main transport device, which will be described later.

[0121] 22 and 24, the coating and developing system 1A includes a cassette block D1, a first stacking processing block D2, a second stacking processing block D3, and an interface block D4, arranged in this order in the width direction (Y direction in FIG. 22, etc.). Adjacent blocks among the cassette block D1, the first stacking processing block D2, the second stacking processing block D3, and the interface block D4 are connected to each other. The cassette block D1, the first stacking processing block D2, the second stacking processing block D3, and the interface block D4 are provided with housings D1a, D2a, D3a, and D4a, respectively, and are separated from each other. Wafer W transfer areas are formed inside the housings D1a, D2a, D3a, and D4a.

[0122] An exposure device 4 is connected to the interface block D4 on the opposite side (positive side in the Y direction) from the second stacking processing block D3.

[0123] Wafers W are transported to the coating and developing system 1A in a state stored in a cassette C. The first stacked processing block D2 and the second stacked processing block D3 are each partitioned vertically into two sections. Each partitioned section forms a processing block having a processing device and a main transfer device that transports wafers W to the processing device. Hereinafter, the lower and upper sections of the first stacked processing block D2, which is partitioned vertically into two sections, will be referred to as processing block 3A and processing block 3B, respectively, and the lower and upper sections of the second stacked processing block D3, which is similarly partitioned into two sections, will be referred to as processing block 3C and processing block 3D, respectively.

[0124] The processing blocks 3A and 3C are adjacent to each other in the horizontal width direction (Y direction), and these processing blocks 3A and 3C are sometimes collectively referred to as the lower processing blocks. The processing blocks 3B and 3D are adjacent to each other in the horizontal width direction (Y direction), and these processing blocks 3B and 3D are sometimes collectively referred to as the upper processing blocks. The upper processing blocks are shown in FIG. 1 . Each of the upper processing blocks, 3B and 3D, is provided with a shuttle (also referred to as a bypass transfer device). The shuttle transfers wafers W to downstream blocks on the transfer path without passing through the processing devices.

[0125] In this embodiment, the term "apparatus" refers to a location other than the transfer apparatus (including the shuttle) where the wafer W is placed. An apparatus that processes the wafer W is described as a processing apparatus as described above, and this processing also includes acquiring images for inspection.

[0126] The cassette block D1 is provided with a mounting table 711, for example, at the end opposite to the first stacking processing block D2 (the positive side in the Y direction in FIGS. 22 and 23 ). The mounting table 711 is provided with a plurality of mounting plates 712 arranged in the depth direction (the X direction in FIG. 21 , etc.) on which the cassettes C are placed when the cassettes C are carried in and out of the coating and developing system 1.

[0127] Furthermore, a transfer tower T1 is provided in the cassette block D1 at the center in the depth direction (X direction) at the end on the first stacking processing block D2 side (the positive side in the Y direction in FIG. 21 , etc.) The transfer tower T1 is configured by stacking multiple stages in the vertical direction, including devices such as transfer devices on which wafers W are temporarily placed.

[0128] Furthermore, a transfer device 714 that can move on a transfer path 713 that extends in the depth direction (X direction) is provided in the center of the cassette block D1 in the width direction (Y direction), which is the horizontal direction. The transfer device 714 can also move in the vertical direction and around the vertical axis (θ direction), and can transfer wafers W between the cassette C on the mounting plate 712 and the devices in the transfer tower T1.

[0129] Furthermore, the cassette block D1 is provided with a hydrophobization treatment device 715 at the rear end of the cassette block D1, which is located at the rear side of the transfer tower T1 (the positive side in the X direction in FIG. 21 , etc.), and which performs a hydrophobization treatment on the wafers W. The hydrophobization treatment device 715 may be stacked in multiple stages in the vertical direction.

[0130] Furthermore, the cassette block D1 is provided with a transfer device 716 between the transfer tower T1 and the hydrophobization treatment device 715. The transfer device 716 is movable in the vertical direction and around the vertical axis (the θ direction) and can transfer wafers W between the devices in the transfer tower T1 and the hydrophobization treatment device 715, or between the devices in the transfer tower T1. The transfer device 716 can also transfer wafers W to a transfer device TRS712B for the shuttle 900B provided in the processing block 3B.

[0131] 24, the first stacked processing block D2 has, in its front (negative side in the X direction) section, multiple (e.g., four or more; in the illustrated example, eight) stacked resist coating apparatuses 32 serving as liquid processing apparatuses and rotary processing apparatuses. Specifically, the front section of the first stacked processing block D2 is vertically divided into multiple (e.g., four or more; in the illustrated example, eight) levels, each of which is provided with a resist coating apparatus 32. Hereinafter, the eight levels will be referred to as levels E1 to E8, starting from the bottom. The lower levels E1 to E4 are included in processing block 3A, and the upper levels E5 to E8 are included in processing block 3B.

[0132] As shown in FIGS. 22 and 24 , a wafer W transfer region 722 is provided at the rear (positive side in the X direction) of stories E5 to E8 of the processing block 3B. The transfer region 722 is formed in a band shape in a plan view, extending from one end of the processing block 3B in the width direction (positive side in the Y direction), and extends vertically from story E5 to story E8. At the rear (positive side in the X direction) of the transfer region 722, a processing device stack 723 is provided, in which processing devices are stacked in multiple levels (six levels in the illustrated example). For example, two processing device stacks 723 are provided, spaced apart in the width direction (positive side in the Y direction). Each processing device stack 723 includes, for example, a heat treatment device 40.

[0133] For example, a portion of a main transfer device 800B serving as a substrate transfer device is located in the transfer region 722. The main transfer device 800B is movable in the width direction (Y direction in the figure), the vertical direction, and around the vertical axis (θ direction), and can transfer wafers W to each processing device in the processing block 3B. The main transfer device 800B can transfer wafers W to devices located at the same height as the processing block 3B, among devices in a transfer tower T1 adjacent to the processing block 3B in the width direction (Y direction in the figure) and a transfer tower T2 (described later). Furthermore, the main transfer device 800B can transfer wafers W to a transfer device TRS for a shuttle 900B provided in the processing block 3B.

[0134] A partitioned flat space 910B is provided below the processing device stack 723 of the processing block 3B. The space 910B is formed from one end to the other in the width direction (Y direction) of the processing block 3B. A shuttle 900B and shuttle transfer devices TRS712B and TRS712D are provided in the space 910B.

[0135] The processing blocks 3A, 3C, and 3D have the same configuration as processing block 3B, except for the differences described below. Each of processing blocks 3A, 3C, and 3D is equipped with a main carrier equivalent to main carrier 800B. Instead of the letter "B," the same alphabetic character as that used for the processing block having the main carrier will be used in the following description and drawings for this main carrier. Specifically, the main carrier in processing block 3A will be designated "800A." Other main carriers equivalent to main carrier 800B can also transport wafers W to processing devices and shuttle transfer devices TRS within the processing block in which the main carrier is installed, and to transfer towers adjacent to the processing block in the width direction (Y direction).

[0136] Furthermore, the symbol for the space corresponding to the space 910B described above where a shuttle can be installed uses the same alphabetical character as that attached to the processing block instead of "B." Furthermore, if a shuttle is provided in a processing block, the symbol for that shuttle also uses the same alphabetical character as that attached to the processing block. The shuttle transfer device TRS uses the same alphabetical character as the processing block in which the shuttle is provided. Furthermore, for the shuttle transfer devices TRS used for the same shuttle, the interface block D4 side has the symbol 711, and the cassette block D1 side has the symbol 712 attached before the alphabetical character attached to the processing block. To give a specific example of the above symbol convention, the shuttle provided in processing block 3D is designated 900D, and the transfer devices on the interface block D4 side and the cassette block D1 side of this shuttle 900D are designated TRS711D and TRS712D, respectively.

[0137] The processing block 3A differs from the processing block 3B in that the transfer region 722 in the processing block 3A is formed to extend vertically from the floor E1 to the floor E4.

[0138] The second stacking processing block D3 has substantially the same configuration as the first stacking processing block D2. The following describes the second stacking processing block D3, focusing on the differences from the first stacking processing block D2.

[0139] The processing block 3D of the second stacked processing block D3 has the same positional relationship as the processing block 3B in terms of the transfer region 722, processing equipment stack 723, main transfer device, and space for installing a shuttle stacked in the processing equipment. However, floors E5 to E8 of the processing block 3D are provided with developing devices that develop wafers W with a developer. The processing equipment stack 723 of the processing block 3D also has a heat treatment device, but this heat treatment device is for PEB. Furthermore, the processing equipment stack 723 of the processing block 3D is provided with an inspection device that images the wafers W to determine whether or not there are any abnormalities in the wafers W (i.e., acquires images of the wafers W for inspection). The shuttle space 910D in the processing block 3D is located at the same height as the space 910B and is connected to the space 910B. The space 910D is provided with a shuttle 900D and shuttle transfer devices TRS911B and TRS911D.

[0140] The processing block 3C differs from the processing block 3D in that the transfer region 722 in the processing block 3C is formed to extend vertically from the floor E1 to the floor E4.

[0141] A transfer tower T2 is provided at the end of the transfer region 722 of the second stacking processing block D3 on the side of the first stacking processing block D2 (negative side in the Y direction in FIG. 22, etc.). The transfer tower T2 is positioned so that a portion of it overlaps the end of the transfer region 722 of the first stacking processing block D2 on the side of the second stacking processing block D3 (positive side in the Y direction in FIG. 1, etc.) in a plan view. The transfer tower T2 is configured by stacking devices such as transfer apparatuses in multiple stages in the vertical direction.

[0142] The interface block D4 includes a transfer tower T3 in its central portion in the depth direction (X direction in FIG. 22). This transfer tower T3 is configured by stacking transfer devices and other devices in multiple stages in the vertical direction. Transport devices 731, 732, and 733 are provided on the front side (negative side in the X direction), the back side (positive side in the X direction), and the exposure device 4 side (positive side in the Y direction in FIG. 1, etc.) of the transfer tower T3, respectively. The transport devices 731, 732, and 733 are movable vertically and around the vertical axis (θ direction).

[0143] A back surface cleaning device 735 that supplies a cleaning liquid to the back surface of the wafer W to clean it is provided on the front side (negative side in the X direction) of the transfer device 731. The back surface cleaning device 735 may be stacked in multiple stages in the vertical direction. A post-exposure cleaning device 736 that supplies a cleaning liquid to the front surface of the wafer W after exposure is provided on the rear side (positive side in the X direction) of the transfer device 732. The post-exposure cleaning device 736 may be stacked in multiple stages in the vertical direction. Each of the transfer devices 731 to 733 can transport the wafer W to the devices in the transfer tower T3. Furthermore, the transfer device 731 can transport the wafer W to the back surface cleaning device 735, the transfer device 732 can transport the wafer W to the post-exposure cleaning device 736, and the transfer device 733 can transport the wafer W to the exposure device 4.

[0144] Here, the shuttles 900B and 900D and the transfer devices TRS for each shuttle will be described. The shuttle 900B transports wafers W from the processing block 3D to the cassette block D1. As shown in FIG. 22 , of the transfer devices TRS711B and 712B for the shuttle 900B, the transfer device TRS712B is provided at the end of the space 910B on the cassette block D1 side (negative side in the Y direction) so as to be able to transfer wafers W to and from the transfer device 716 in the cassette block D1. The transfer device TRS711B is provided at the end of the space 910D on the processing block 3B side (negative side in the Y direction) closer to the interface block D4 side (positive side in the Y direction) than the transfer tower T2 so as to be able to transfer wafers W to and from the main transfer device 800D in the processing block 3D.

[0145] The shuttle 4D transports wafers W from the processing block 3B to the interface block D4. Of the delivery devices TRS711D and 712D for the shuttle 900D, the delivery device TRS711D is provided at the end of the space 910D on the interface block D4 side (positive side in the Y direction) so as to be able to transfer wafers W to and from the transfer device 732 in the interface block D4. The delivery device TRS712D is provided at the end of the space 910B on the processing block 3D side (positive side in the Y direction) closer to the cassette block D1 side (negative side in the Y direction) than the delivery tower T2 so as to be able to transfer wafers W to and from the main transfer device 800B in the processing block 3B.

[0146] The shuttle 900A transports wafers W from the processing block 3C to the cassette block D1. The positions of the transfer devices TRS711A and TRS612A for the shuttle 900A are the same as those of the transfer devices TRS711B and TRS612B for the shuttle 900B.

[0147] The shuttle 900C also transports wafers W from the processing block 3A to the interface block D4. The locations of the transfer devices TRS711C and 712C for the shuttle 900C are the same as those of the transfer devices TRS711D and 712D for the shuttle 900B.

[0148] As shown in FIGS. 22, 24 and 25, the main transport device 800A has upper and lower guides 801, a lateral guide 802 and a transport arm 803.

[0149] The upper and lower guides 801 extend in the vertical direction. For example, in a plan view, the upper and lower guides 801 are provided at positions adjacent to the transfer region 722 in the depth direction (X direction in the figure) and between the processing device stacks 723. The upper and lower guides 801 are also provided so as not to interfere with the shuttle 900A and the wafers W transferred by the shuttle 900A. An exhaust duct 725 is provided at a position adjacent to the rear side of the upper and lower guides 801. The exhaust duct 725 is used to guide gas exhausted from the heat treatment device 40 to the outside of the coating and developing system 1A.

[0150] The lateral guide 802 extends in the width direction (Y direction in the drawing) and moves along the upper and lower guides 801. For example, the lateral guide 802 is provided at the rear end of the transport area 722 (positive side in the X direction in the drawing).

[0151] The transfer arm 803 supports and moves the wafer W. Specifically, the transfer arm 803 holds the wafer W and moves it in the horizontal direction (X direction and Y direction in the figure) and in the direction around the vertical axis (θ direction). The transfer arm 803 has a moving body 811 that moves along the lateral guides 802 and a base 812 that rotates relative to the moving body 811. The transfer arm 803 also has forks 305a and 305b.

[0152] Furthermore, the main transport device 800A includes a drive mechanism (not shown) that individually moves the first fork 305a and the second fork 305b linearly in the direction toward or away from the base 812, and a drive mechanism (not shown) that rotates the base 812 relative to the movable body 811. The main transport device 800A also includes a drive mechanism (not shown) that moves the movable body 811 along the horizontal guide 802, and a drive mechanism (not shown) that moves the horizontal guide 802 along the upper and lower guides 801. Each drive mechanism includes a motor as a drive source that generates a drive force for movement or rotation.

[0153] Furthermore, the main transport device 800A has a detection unit (not shown) similar to the detection unit 360 of the transport device 300 described above.

[0154] The main carrier units 800B, 800C, and 800D are configured in the same manner as the main carrier unit 800A.

[0155] <Wafer Processing> Next, an example of wafer processing and transport paths using the coating and developing system 1A will be described.

[0156] For example, first, the transfer device 714 removes the wafer W from the cassette C that has been loaded into the cassette block D1 of the coating and developing system 1A and placed on the loading plate 712, and transfers it to the transfer device of the transfer tower T1.

[0157] Subsequently, the wafer W is transferred by the transfer device 716 to the hydrophobization treatment device 715, where the hydrophobization treatment is performed. Thereafter, the wafer W is returned by the transfer device 716 to the transfer tower T1.

[0158] Next, the wafer W is transferred by the main transfer mechanism 800A or the main transfer mechanism 800B to the resist coating device 32, where a resist film is formed.

[0159] Specifically, first, the operation of the transfer arm 803 of the main transfer mechanism 800 A or 800 B is controlled by the control device 500 , and the wafer W is transferred to the resist coating device 32 .

[0160] More specifically, the fork 305a supporting the wafer W is moved from a standby position on the base end side thereof to a delivery position on the spin chuck 201 of the resist coating device 32. For the sake of simplicity, it is assumed below that the position of the wafer W on the fork 305a, i.e., the positional relationship between the fork 305a and the wafer W supported by the fork 305a, is the same every time.

[0161] After the fork 305a moves to the delivery position, the lift pins (not shown) in the resist coating device 32 are raised, and the wafer W is delivered to the lift pins. Next, the fork 305a is returned to the standby position, and the lift pins are lowered, and the wafer W is delivered to and held by the spin chuck 201 of the resist coating device 32. Then, a resist solution is discharged from a discharge nozzle onto the wafer W rotated by the spin chuck 201, and a resist film is formed on the wafer W.

[0162] After the resist film is formed, an EBR (Edge Bead Removal) process is performed using the same resist coating device 32 .

[0163] Specifically, a removal liquid such as a solvent is discharged from a discharge nozzle onto the wafer W rotated by the spin chuck 201, and the resist film on the peripheral edge of the wafer W is removed in a circular ring shape centered on the wafer W.

[0164] Thereafter, the wafer W is transferred by the main transfer mechanism 800A or the main transfer mechanism 800B to the heat treatment device 40 in the first stacked processing block, where it is subjected to a pre-bake process. Next, the wafer W is transferred by the main transfer mechanism 800A or the main transfer mechanism 800B to the transfer device in the transfer tower T2, and then transferred by the main transfer mechanism 800C or the main transfer mechanism 800D to the transfer device in the transfer tower T3 in the interface block D4. Note that the wafer W after the resist film formation may be transferred from the processing block 3A to the transfer tower T3, bypassing the second stacked processing block D3, via the main transfer mechanism 800A, the shuttle 900C, the transfer devices TRS712C and 711C, and the transfer mechanism 732. In addition, the wafer W after the resist film formation may be transported from the processing block 3B to the transfer tower T3 via the main transfer device 800B, the shuttle 900D, the transfer devices TRS712D, 711D and the transfer device 732, bypassing the second stack processing block D3.

[0165] Next, the wafer W is transferred by the transfer device 731 to the back surface cleaning device 735, where the back surface is cleaned. Thereafter, the wafer W is returned to the transfer tower T3 by the transfer device 731, and then transferred by the transfer device 733 to the exposure device 4, where the exposure process is performed. After the exposure, the wafer W is returned to the transfer tower T3 by the transfer device 733, and then transferred by the transfer device 732 to the post-exposure cleaning device 736, where the wafer W is cleaned.

[0166] After cleaning by the post-exposure cleaning unit 736, the wafer W is first returned to the transfer tower T3 by the transfer unit 732. Then, the main transfer unit 800C or the main transfer unit 800D transfers the wafer W to the heat treatment unit, the development unit, and the inspection unit in this order within the second stacked processing block D3. A resist pattern is formed after PEB (Post Exposure Bake) processing, and the presence or absence of anomalies is then determined. The wafer W is then returned to the transfer tower T2 by the main transfer unit 800C or the main transfer unit 800D, and then returned to the transfer tower T1 by the main transfer unit 800A or the main transfer unit 800B. The wafer W processed by the inspection unit may be returned from the processing block 3C to the transfer tower T1 via the main transfer unit 800C, the shuttle 900A, the transfer units TRS711A and 712A, and the transfer unit 716, bypassing the first stacked processing block D2. Furthermore, the wafer W processed by the inspection device may be returned from the processing block 3D to the transfer tower T1 via the main transfer device 800D, the shuttle 900B, the transfer devices TRS711B and 712B, and the transfer device 716, bypassing the first stacked processing block D2.

[0167] Then, the wafer W is returned from the transfer tower T1 to the cassette C by the transfer device 714. This completes a series of wafer processing steps.

[0168] In coating and developing system 1 having main transfer devices 800A to 800D as described above, when the processing temperature setting of heat treatment device 40 is changed, the length of upper and lower guides 801 changes due to the influence of hot plate 401, specifically, due to the influence of heat from exhaust duct 725, etc. This causes upper and lower guides 801 to bend and deform, as shown by the imaginary lines in Figure 25, resulting in a shift in the position of fork 813, which may cause the center point of wafer W supported by fork 813 moved to the delivery position for resist coating device 32 to shift from the center point of spin chuck 201.

[0169] The transport method according to the present disclosure can also be applied to the main transport devices 800A to 800D.

[0170] <Modification> In the above, detection unit 360 for detecting the position of wafer W on forks 305a, 305b is provided in transfer device 300 and main transfer devices 800A-800D, but it may be provided in other locations. For example, detection unit 360 may be an imaging unit of an imaging device that images wafer W for purposes such as defect inspection. Also, in the above example, correction of the transfer position is performed for each rotary processing device. Instead, a second correction amount for the transfer position may be calculated for one rotary processing device, and this second correction amount may be applied to other rotary processing devices that overlap with the one rotary processing device in a plan view.

[0171] In the above example, the rotary processing device in which the transfer position is corrected and the wafer W is transported by the method according to the present disclosure is a device related to resist films, such as the resist coating device 32, but it may be other devices. For example, the transfer position may be corrected and the wafer W may be transported by the method according to the present disclosure in a rotary processing device that removes films other than resist films on the wafer W that are on the peripheral portion of the wafer W (specifically, a rotary processing device that removes polysilicon films on the wafer W that are on the peripheral portion of the wafer W using hydrofluoric acid).

[0172] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0173] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0174] Note that the following configuration examples also fall within the technical scope of the present disclosure: (1) A substrate transport method using a transport arm having a first substrate support part and a second substrate support part, comprising: calculating a first correction amount of a transfer position based on a position of the substrate on the first substrate support part, correcting the transfer position for the first substrate based on the first correction amount for the first substrate, moving the first substrate support part to the corrected transfer position and transferring the first substrate from the first substrate support part to a rotary processing device, moving the second substrate support part to a predetermined receiving position and receiving the first substrate from the rotary processing device by the second substrate support part, calculating a second correction amount of the transfer position based on the position of the first substrate on the second substrate support part, and correcting the transfer position for the second substrate based on the second correction amount and the first correction amount for a second substrate transferred after the first substrate. (2) The substrate transport method according to (1), wherein the step of calculating the second correction amount calculates the second correction amount based on the positions of each of the plurality of first substrates on the second substrate support part. (3) The substrate transport method according to (1) or (2), further including the step of determining, based on the second correction amount and a predetermined threshold, whether or not to correct the transfer position for the second substrate based on the second correction amount, and executing the step of correcting the transfer position for the second substrate only when it is determined that the correction should be made based on the second correction amount. (4) The substrate transport method according to any one of (1) to (3), wherein the rotation processing device is an edge removal device that rotates the substrate to remove a coating film on a edge of the substrate. (5) A substrate transport method according to any one of (1) to (4), further comprising: a step of acquiring, at different times, drive data relating to the drive of a motor that drives the movement of the first substrate support part and which fluctuates due to heat generated by the motor; and a step of calculating, based on the acquired drive data, a compensation amount for compensating for positional deviation due to heat generated by the motor, wherein the step of correcting the transfer position for the first substrate and the step of correcting the transfer position for the second substrate each correct the transfer position based on the compensation amount.(6) The substrate transfer method according to any one of (1) to (5), further comprising the step of rotating the first substrate by a predetermined angle using the rotation processing device before the receiving step so that the orientation of the first substrate during the receiving step is different from that during the transferring step. (7) The substrate transfer method according to (6), wherein the predetermined angle is 180°. (8) A substrate transport device that transports a substrate to a rotary processing device that processes the substrate while rotating the substrate, comprising: a transport arm configured to be movable and having a first substrate support portion and a second substrate support portion that support the substrate; a detection portion that detects a position of the substrate on the first substrate support portion and a position of the substrate on the second substrate support portion; a first correction amount calculation portion that calculates a first correction amount of a transfer position based on a detection result of the position of the substrate on the first substrate support portion; a transfer position correction portion that corrects the transfer position for the first substrate based on the first correction amount for the first substrate; a first movement control portion that moves the first substrate support portion to the transfer position corrected by the transfer position correction portion and causes the first substrate to be transferred from the first substrate support portion to the rotary processing device; and a second movement control portion that moves the second substrate support portion to a predetermined receiving position and causes the second substrate support portion to receive the first substrate, which has been transferred from the first substrate support portion to the rotary processing device, from the rotary processing device. a second correction amount calculation unit that calculates a second correction amount of a transfer position based on a detection result of a position on the second substrate support unit of the first substrate received by the second substrate support unit, wherein the transfer position correction unit corrects the transfer position for the second substrate based on the second correction amount and the first correction amount for a second substrate that is transferred after the first substrate. (9) The substrate transfer device described in (8), wherein the second correction amount calculation unit calculates the second correction amount based on a detection result of a position on the second substrate support unit of each of the first substrates received by the second substrate support unit after being transferred from the first substrate support unit to the rotation processing device.(10) The n-substrate transport device according to (8) or (9), further comprising a determination unit that determines, based on the second correction amount and a predetermined threshold, whether to correct the transfer position for the second substrate based on the second correction amount, and the transfer position correction unit corrects the transfer position for the second substrate based on the second correction amount and the first correction amount applied to the second substrate only when it is determined that the correction should be made based on the second correction amount. (11) The substrate transport device according to any one of (8) to (10), wherein the rotation processing device is an edge removal device that rotates the substrate to remove a coating film on a peripheral edge of the substrate. (12) The substrate transport apparatus according to any one of (8) to (11), further comprising: an acquisition unit that acquires, at different times, drive data related to the drive of a motor that drives movement of the first substrate support unit and that fluctuates due to heat generated by the motor; and a compensation amount calculation unit that calculates a compensation amount that compensates for positional deviation due to heat generated by the motor, based on the drive data acquired by the acquisition unit, wherein the transfer position correction unit corrects the transfer position for the first substrate and the transfer position for the second substrate, based on the compensation amount. (13) The substrate transport apparatus according to any one of (8) to (12), further comprising: a rotation control unit that controls rotation of the substrate in the rotation processing unit, wherein the rotation control unit rotates the first substrate by a predetermined angle in the rotation processing unit before the first substrate is received by the second substrate support unit so that the orientation of the first substrate when received by the second substrate support unit is different from that when handed over from the first substrate support unit. (14) The substrate transport apparatus according to (13), wherein the predetermined angle is 180°.(15) A program that runs on a computer of a control unit that controls a substrate transfer device to cause the substrate transfer device to execute a substrate transfer method for transferring a substrate to a rotary processing device that processes the substrate while rotating the substrate, wherein the substrate transfer device comprises a transfer arm that is configured to be movable and has a first substrate support portion and a second substrate support portion that support the substrate, and the substrate transfer method includes the steps of: calculating a first correction amount of a transfer position based on a position of the substrate on the first substrate support portion; correcting the transfer position for the first substrate based on the first correction amount for the first substrate; moving the first substrate support portion to a corrected transfer position and transferring the first substrate from the first substrate support portion to the rotary processing device; moving the second substrate support portion to a predetermined receiving position and receiving the first substrate from the rotary processing device by the second substrate support portion; and calculating a second correction amount of the transfer position based on the position of the first substrate on the second substrate support portion. a transfer position for the second substrate being corrected based on the second correction amount and the first correction amount for a second substrate being transported after the first substrate;

[0175] 32 Resist coating device 33 Top anti-reflection coating forming device 300 Transfer device 300a Transfer arm 305a, 305b Fork 360 Detector 510 Motor driver 522 First correction amount calculator 523 Delivery position corrector 525 Second correction amount calculator W Wafer

Claims

1. A substrate transport method using a transport arm having a first substrate support part and a second substrate support part, comprising: a step of calculating a first correction amount for a transfer position based on the position of the substrate on the first substrate support part; a step of correcting the transfer position for the first substrate based on the first correction amount for the first substrate; a step of moving the first substrate support part to the corrected transfer position and transferring the first substrate from the first substrate support part to a rotary processing device; a step of moving the second substrate support part to a predetermined receiving position and receiving the first substrate from the rotary processing device by the second substrate support part; a step of calculating a second correction amount for the transfer position based on the position of the first substrate on the second substrate support part; and a step of correcting the transfer position for the second substrate based on the second correction amount and the first correction amount for a second substrate that is transported after the first substrate.

2. The substrate transport method according to claim 1, wherein the step of calculating the second correction amount calculates the second correction amount based on the position of each of the plurality of first substrates on the second substrate support part.

3. A substrate transport method as described in claim 1 or 2, further comprising a step of determining whether or not to correct the transfer position for the second substrate based on the second correction amount and a predetermined threshold value, and executing the step of correcting the transfer position for the second substrate only when it is determined that correction should be made based on the second correction amount.

4. A substrate transport method according to claim 1 or 2, wherein the rotation processing device is a peripheral edge removal device that rotates the substrate to remove a coating film on the peripheral edge of the substrate.

5. A substrate transport method as described in claim 1 or 2, further comprising the steps of: acquiring, at different times, drive data relating to the drive of a motor that drives the movement of the first substrate support part and which fluctuates due to heat generated by the motor; and calculating, based on the acquired drive data, a compensation amount for compensating for positional deviation due to heat generated by the motor, wherein the step of correcting the transfer position for the first substrate and the step of correcting the transfer position for the second substrate each correct the transfer position based on the compensation amount.

6. A substrate transport method as described in claim 1 or 2, further comprising a step of rotating the first substrate by a predetermined angle using the rotation processing device before the receiving step so that the orientation of the first substrate during the receiving step is different from that during the transferring step.

7. The substrate transfer method according to claim 6, wherein the predetermined angle is 180°.

8. A substrate transport device that transports a substrate to a rotary processing device that processes the substrate while rotating the substrate, comprising: a transport arm that is configured to be movable and has a first substrate support section and a second substrate support section that support the substrate; a detection section that detects the position of the substrate on the first substrate support section and the position of the substrate on the second substrate support section; a first correction amount calculation section that calculates a first correction amount for a transfer position based on the detection result of the position of the substrate on the first substrate support section; a transfer position correction section that corrects the transfer position for the first substrate based on the first correction amount for the first substrate; a first movement control section that moves the first substrate support section to the transfer position corrected by the transfer position correction section, and causes the first substrate to be transferred from the first substrate support section to the rotary processing device; and a second movement control section that moves the second substrate support section to a predetermined receiving position, and causes the second substrate support section to receive from the rotary processing device the first substrate that has been transferred from the first substrate support section to the rotary processing device. a second correction amount calculation unit that calculates a second correction amount of a transfer position based on a detection result of the position of the first substrate received by the second substrate support unit on the second substrate support unit, wherein the transfer position correction unit corrects the transfer position for the second substrate based on the second correction amount and the first correction amount applied to a second substrate that is transferred after the first substrate.

9. A substrate transport device as described in claim 8, wherein the second correction amount calculation unit calculates the second correction amount based on the detection results of the position on the second substrate support unit of each of the multiple first substrates received by the second substrate support unit after being transferred from the first substrate support unit to the rotation processing device.

10. A substrate transport device as described in claim 8 or 9, further comprising a judgment unit that judges whether or not to correct the transfer position for the second substrate based on the second correction amount and a predetermined threshold value, and the transfer position correction unit corrects the transfer position for the second substrate based on the second correction amount and the first correction amount applied to the second substrate only when it is judged that correction should be made based on the second correction amount.

11. The substrate transport device according to claim 8 or 9, wherein the rotation processing device is an edge removal device that rotates the substrate to remove a coating film on the edge of the substrate.

12. A substrate transport device as described in claim 8 or 9, further comprising: an acquisition unit that acquires, at different times, drive data related to the drive of a motor that drives the movement of the first substrate support unit and that fluctuates due to heat generated by the motor; and a compensation amount calculation unit that calculates a compensation amount that compensates for positional deviation due to heat generated by the motor based on the drive data acquired by the acquisition unit, wherein the transfer position correction unit corrects the transfer position for the first substrate and the transfer position for the second substrate based on the compensation amount.

13. A substrate transport device as described in claim 8 or 9, further comprising a rotation control unit that controls the rotation of the substrate in the rotation processing device, wherein the rotation control unit rotates the first substrate by a predetermined angle in the rotation processing device before it is received by the second substrate support unit so that the orientation of the first substrate when received by the second substrate support unit is different from when it is handed over from the first substrate support unit.

14. The substrate transport apparatus of claim 13, wherein the predetermined angle is 180 degrees.

15. A program running on a computer of a control unit that controls a substrate transfer device to cause the substrate transfer device to execute a substrate transfer method for transferring a substrate to a rotary processing device that processes the substrate while rotating the substrate, wherein the substrate transfer device is equipped with a transfer arm that is configured to be movable and has a first substrate support portion and a second substrate support portion that support the substrate, the substrate transfer method comprising: a step of calculating a first correction amount for a transfer position based on the position of the substrate on the first substrate support portion; a step of correcting the transfer position for the first substrate based on the first correction amount for the first substrate; a step of moving the first substrate support portion to the corrected transfer position and transferring the first substrate from the first substrate support portion to the rotary processing device; a step of moving the second substrate support portion to a predetermined receiving position and receiving the first substrate from the rotary processing device by the second substrate support portion; and a step of calculating a second correction amount for the transfer position based on the position of the first substrate on the second substrate support portion. a transfer position for the second substrate being corrected based on the second correction amount and the first correction amount for a second substrate being transported after the first substrate;

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