Adhesive tape

Abstract

The present invention provides an adhesive tape that makes it possible to precisely prevent or suppress the generation of static electricity in a substrate or a component affixed to the adhesive tape and pick up the substrate or component when picking up the substrate or the component while in a state in which the substrate or the component is pushed up from the adhesive tape side after radially stretching the adhesive tape. The adhesive tape 100 comprises a base material 4 and an adhesive layer 2, and is used with at least one of the substrate and the component temporarily affixed thereto. The base material 4 includes a resin material and a conductive material. When the time at which the electrostatic charge decays to 5 [V] when the adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction while under conditions in which the temperature is 23°C and the relative humidity is 50% is denoted by X [seconds] and the time at which the electrostatic charge decays to 5 [V] when the adhesive tape 100 is stretched by 50% in the TD direction and forcibly charged to 5000 [V] in the TD direction is denoted by Y [seconds], the adhesive tape 100 satisfies Y - X < 1.0 seconds.

Description

adhesive tape

[0001] The present invention relates to an adhesive tape used for temporarily fixing at least one of a substrate and a component.

[0002] 2. Description of the Related Art In recent years, with the increasing sophistication of electronic devices and the expansion of mobile applications, there has been a growing demand for higher density and integration of semiconductor devices, and IC packages are becoming larger in capacity and higher in density.

[0003] For example, a method for manufacturing these semiconductor devices involves first applying adhesive tape to a semiconductor substrate (semiconductor wafer) as a substrate, and then dicing the semiconductor substrate in the thickness direction using a dicing saw while fixing the periphery of the semiconductor substrate with a wafer ring. This results in the semiconductor substrate being cut and separated (singulated) into individual semiconductor elements (semiconductor chips). Next, an expanding process is performed in which the adhesive tape is stretched radially using the wafer ring to form gaps between adjacent semiconductor elements. This is followed by a pick-up process in which the singulated semiconductor elements are picked up while being pushed up with a needle. The picked-up semiconductor elements are then transferred to a mounting process in which they are mounted on a metal lead frame or substrate (e.g., a tape substrate, an organic hard substrate, etc.). In the mounting process, the picked-up semiconductor elements are adhered to the lead frame or substrate, for example, via an underfill material. The semiconductor elements are then encapsulated on the lead frame or substrate with a sealing portion, thereby producing a semiconductor device.

[0004] In recent years, various studies have been conducted on adhesive tapes (dicing tapes) used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

[0005] This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the semiconductor substrate is fixed by the adhesive layer. With an adhesive tape having such a configuration, as in the above-described semiconductor device manufacturing method, after the dicing step of dicing the semiconductor substrate, an expanding step of radially stretching the adhesive tape is performed, thereby forming gaps between adjacent semiconductor elements, and then a pick-up step of picking up the semiconductor elements is performed. That is, in the pick-up step after the dicing step and the expanding step, the semiconductor elements are pushed up using needles while forming gaps between adjacent semiconductor elements, and the semiconductor elements are picked up while maintaining this state by suction with a vacuum collet or air tweezers, for example.

[0006] Here, when adhesive tape is applied to the semiconductor wafer in the dicing process described above, when the semiconductor wafer is cut using a dicing saw, and when the semiconductor elements are picked up in the pick-up process, static electricity is generated in the semiconductor elements, and the discharge of this static electricity in the semiconductor elements causes damage to the semiconductor elements, resulting in a problem of deterioration in the characteristics of the semiconductor elements.

[0007] In order to solve this problem, that is, to prevent the generation of static electricity in semiconductor elements, an adhesive tape having an antistatic layer provided on a substrate has been proposed (see, for example, Patent Document 2).

[0008] However, in this case, there is a problem that the antistatic layer may break when the adhesive tape is radially stretched in the expanding step, resulting in a loss of antistatic function, and there is also a concern that this problem may impair the effect of preventing or suppressing the generation of static electricity in semiconductor elements.

[0009] Furthermore, such problems are not limited to cases where semiconductor elements as components are obtained by cutting a semiconductor substrate (semiconductor wafer) as a substrate in the thickness direction, but also occur in cases where various substrates such as glass substrates, ceramic substrates, resin material substrates, and metal material substrates are cut (divided) in the thickness direction, and then the diced components are obtained by picking up the diced components while the adhesive tape is stretched radially.

[0010] On the other hand, Patent Document 3 discloses a composite sheet for forming a protective film, which includes a support sheet and a film for forming a protective film formed on one side of the support sheet, and has a surface resistivity of a predetermined value or less after expansion. The surface resistivity after expansion is measured as follows. First, the composite sheet for forming a protective film is placed on a table and attached to an 8-inch ring frame. Next, the table is pushed up to a push-up height of 20 mm to expand the film for forming a protective film in the surface direction. Then, the surface resistivity of the outermost surface on the substrate sheet side is measured.

[0011] However, it is being considered that the stretching ratio of the support sheet during expansion will be increased in the future. In the measurement method described in Patent Document 3, the portion of the composite sheet for forming a protective film to be attached to the semiconductor wafer is stretched by pushing up the table at a push-up height of 20 mm. The calculated stretching ratio in this case is estimated to be approximately 20 to 30%. Given future increases in stretching ratios, such stretching ratios are insufficient to adequately evaluate the surface resistivity of the sheet. Furthermore, with the composite sheet for forming a protective film described in Patent Document 3, further increases in stretching ratio may result in an increase in surface resistivity. Therefore, there is a demand for an adhesive tape that can maintain good antistatic properties even when the stretching ratio is further increased.

[0012] JP 2009-245989 A JP 2012-248607 A WO 2020 / 116275

[0013] The present invention aims to provide an adhesive tape that can accurately prevent or suppress the generation of static electricity on a substrate or component when picking up the substrate or component attached to the adhesive tape by stretching the adhesive tape radially and then pushing up the substrate or component from the adhesive tape side, thereby enabling the pickup to be carried out.

[0014] These objects are achieved by the present invention as set forth in (1) to (16) below. (1) A pressure-sensitive adhesive tape comprising a substrate and an adhesive layer containing an adhesive base resin as a main material and laminated on one surface of the substrate, the pressure-sensitive adhesive tape being used for temporarily fixing at least one of a substrate and a component, wherein the substrate comprises a resin material and a conductive material, and wherein the pressure-sensitive adhesive tape is forcibly charged to 5000 V in the TD direction under conditions of 23°C and 50% RH, and the time required for the charged voltage to subsequently decay to 5 V is defined as X seconds, and the pressure-sensitive adhesive tape is forcibly charged to 5000 V in the TD direction while stretched 50% in the TD direction, and the time required for the charged voltage to subsequently decay to 5 V is defined as Y seconds, where Y - X < 1.0 seconds is satisfied. (2) The pressure-sensitive adhesive tape according to (1) above, wherein the time X seconds is 1.0 second or less.

[0015] (3) The pressure-sensitive adhesive tape according to (1) or (2) above, wherein, when the pressure-sensitive adhesive tape is stretched 100% in the TD direction and is forcibly charged to 5000 [V] in the TD direction, and the time taken for the charged voltage to decay to 5 [V] is defined as Z1 [seconds], the time Z1 [seconds] is 5.0 seconds or less.

[0016] (4) The pressure-sensitive adhesive tape according to any one of (1) to (3) above, wherein when the pressure-sensitive adhesive tape is stretched by 250% in the TD direction and then forcibly charged to 5000 [V] in the TD direction, and the time taken for the charged voltage to decay to 5 [V] is defined as Z2 [seconds], the time Z2 [seconds] is 5.0 seconds or less.

[0017] (5) The pressure-sensitive adhesive tape according to any one of (1) to (4) above, wherein the content of the conductive material in the substrate is 5.0% by weight or more and 45.0% by weight or less.

[0018] (6) When the surface resistance of the other surface side of the substrate of the initial pressure-sensitive adhesive tape is SR1 [Ω] under conditions of 23°C and 50% RH, and the surface resistance of the initial pressure-sensitive adhesive tape when stretched 100% from the initial length along the MD under conditions of 23°C and 50% RH is SR2 [Ω], SR2≦1.0×10 １２ [Ω], and log(SR2)-log(SR1)≦2.0.

[0019] (7) An adhesive tape comprising a substrate and an adhesive layer containing an adhesive base resin as a main material and laminated on one surface of the substrate, the adhesive tape being used for temporarily fixing at least one of a substrate and a component, wherein the substrate contains a resin material and a conductive material, and wherein, under conditions of 23°C and 50% RH, a surface resistance value of the other surface side of the substrate in the initial adhesive tape is SR1 [Ω], and under conditions of 23°C and 50% RH, the surface resistance value when the initial adhesive tape is stretched 100% from the initial length along MD is SR2 [Ω], where SR2≦1.0×10 １２ [Ω] and log(SR2)-log(SR1)≦2.0.

[0020] (8) The pressure-sensitive adhesive tape according to (6) or (7), wherein, when the surface resistance of the initial pressure-sensitive adhesive tape is stretched 50% from the initial length along the MD under conditions of 23°C and 50% RH, SR3 [Ω] satisfies log(SR3) - log(SR1) ≦ 1.0.

[0021] (9) SR1≦1.0×10 １２ The pressure-sensitive adhesive tape according to any one of (6) to (8) above, which satisfies [Ω].

[0022] (10) The adhesive tape according to any one of (1) to (9), wherein the conductive material is at least one of a conductive polymer, a permanently antistatic polymer (IDP), a metal oxide material, and a carbon material.

[0023] (11) The pressure-sensitive adhesive tape according to any one of (1) to (10), wherein the resin material is an ester polymer, a styrene polymer, an olefin polymer, a carbonate polymer, or a copolymer containing at least one of these polymers.

[0024] (12) The pressure-sensitive adhesive tape according to any one of (1) to (11) above, wherein the base resin is an acrylic resin.

[0025] (13) The adhesive tape according to any one of (1) to (12) above, wherein the adhesive layer further contains a curable resin that is cured by the application of energy, and the application of energy reduces the adhesive strength of the adhesive layer to at least one of the substrate and the component temporarily fixed on the adhesive layer.

[0026] (14) The adhesive tape according to any one of (1) to (13) above, wherein the substrate has a thickness of 30 μm or more and 200 μm or less.

[0027] (15) The adhesive tape according to any one of (1) to (14) above, wherein the adhesive layer has a thickness of 5 μm or more and 100 μm or less.

[0028] (16) The adhesive tape according to any one of (1) to (15) above, which is used when, with the substrate fixed on the adhesive layer, the adhesive tape is cut from the substrate to reach partway in the thickness direction of the base material to separate the substrate into individual pieces to form the plurality of components, and then, while stretching the adhesive tape in the planar direction, the components are pushed up from the base material side and pulled out from the opposite side of the base material, thereby detaching the components from the adhesive layer.

[0029] According to one aspect of the present invention, in an adhesive tape including a substrate and an adhesive layer laminated on one surface of the substrate, the substrate of the adhesive tape contains a resin material and a conductive material, and satisfies the relationship Y-X < 1.0 second when, under conditions of 23°C and 50% RH, the adhesive tape is forcibly charged to 5000 [V] in the TD direction, and the time required for the charged voltage to subsequently decay to 5 [V] is defined as X [seconds], and further, when the adhesive tape is stretched 50% in the TD direction, the adhesive tape is forcibly charged to 5000 [V] in the TD direction, and the time required for the charged voltage to subsequently decay to 5 [V] is defined as Y [seconds]. According to another aspect of the present invention, there is provided an adhesive tape comprising a substrate and an adhesive layer laminated on one surface of the substrate, wherein the substrate of the adhesive tape contains a resin material and a conductive material, and wherein, when a surface resistance value of the other surface side of the substrate in the initial adhesive tape under conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance value when the initial adhesive tape is stretched to 100% of its initial length along the MD under conditions of 23°C and 50% RH is SR2 [Ω], SR2≦1.0×10 １２ [Ω], and the relationship log(SR2)-log(SR1)≦2.0 is satisfied. By adopting any of these embodiments, when the adhesive tape to which a substrate or component is attached is radially stretched and then the substrate or component is picked up in a state where it is pushed up from the adhesive tape side, the generation of static electricity in the substrate or component can be accurately prevented or suppressed, and the pickup can be performed. Therefore, when a semiconductor element is picked up as a component, damage to the semiconductor element due to static electricity discharge in the semiconductor element, which results in a deterioration in the characteristics of the semiconductor element, can be accurately suppressed or prevented.

[0030] Fig. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. Fig. 2 is a longitudinal sectional view illustrating a method for manufacturing the semiconductor device shown in Fig. 1 using the pressure-sensitive adhesive tape of the present invention. Fig. 3 is a longitudinal sectional view illustrating a method for manufacturing the semiconductor device shown in Fig. 1 using the pressure-sensitive adhesive tape of the present invention. Fig. 4 is an enlarged sectional view of the periphery of a needle located in the region [A] surrounded by a dotted line in Fig. 2. Fig. 5 is a longitudinal sectional view showing an embodiment of the pressure-sensitive adhesive tape. Fig. 6 is a longitudinal sectional view illustrating a method for manufacturing the pressure-sensitive adhesive tape shown in Fig. 5.

[0031] The pressure-sensitive adhesive tape of the present invention will be described in detail below. First, before describing the pressure-sensitive adhesive tape of the present invention, a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention will be described.

[0032] <Semiconductor Device> Figure 1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in Figure 1 will be referred to as "top" and the lower side as "bottom." In addition, in each drawing referred to in this specification, dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0033] The semiconductor device 10 shown in FIG. 1 includes a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and a molded portion (sealing portion) 17 that seals the semiconductor chip 20.

[0034] The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin), etc. The planar shape of the interposer 30 is usually a quadrangle such as a square or rectangle.

[0035] Terminals 41 made of a conductive metal material such as copper are provided in a predetermined shape on the upper surface (one surface) of the interposer 30 .

[0036] Furthermore, a plurality of vias (through holes) (not shown) are formed in the interposer 30 so as to penetrate through the interposer 30 in the thickness direction.

[0037] Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 through a respective via, and the other end (lower end) protrudes from the lower surface (other surface) of the interposer 30 .

[0038] The portion of the bump 70 that protrudes from the interposer 30 is substantially spherical (ball-shaped).

[0039] The bumps 70 are mainly made of a brazing material such as solder, silver brazing, copper brazing, or phosphorus copper brazing.

[0040] Furthermore, terminals 41 are formed on the interposer 30. Terminals 21 of the semiconductor chip 20 are electrically connected to the terminals 41 via connecting portions 81.

[0041] In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30.

[0042] The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the hardened underfill material forms a sealing layer 80. This sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing the intrusion of foreign matter, moisture, etc. into the gap.

[0043] Furthermore, on the upper side of the interposer 30, a molded portion 17 formed to cover the semiconductor chip 20 and the interposer 30 is made of a hardened semiconductor sealing material (sealant), thereby sealing the semiconductor chip 20 within the semiconductor device 10 and preventing the intrusion of foreign matter, moisture, etc. into the semiconductor chip 20.

[0044] 1, the semiconductor chip 20 (semiconductor element) has a semiconductor chip body 23 (semiconductor element body) and terminals 21 provided so as to protrude from the lower surface side of the semiconductor chip body 23. A circuit (not shown) is built into the upper surface side of the semiconductor chip body 23, and the semiconductor chip body 23 is mainly made of Si, SiC, GaN, or Ga. ２ O ３ It is made of semiconductor materials such as

[0045] The semiconductor device 10 and the semiconductor chip 20 having such a configuration are manufactured as follows by, for example, a semiconductor device manufacturing method using adhesive tape.

[0046] <Method for manufacturing a semiconductor device> Figures 2 and 3 are longitudinal cross-sectional views illustrating a method for manufacturing the semiconductor device shown in Figure 1 using the adhesive tape of the present invention, and Figure 4 is an enlarged cross-sectional view of the periphery of a needle located in the area [A] surrounded by a dotted line in Figure 2. In the following description, the upper side in Figures 2 to 4 will be referred to as "upper" and the lower side will be referred to as "lower." In addition, in each of the drawings referred to in this specification, the dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0047] [1A] First, prepare an adhesive tape 100 composed of a laminate having a base material 4 and an adhesive layer 2 laminated on the upper surface of the base material 4. As shown in FIG. 2( a), place a semiconductor substrate 7 (semiconductor wafer) on the adhesive layer 2 in the center 122 of the tape, and lightly press down to laminate (temporarily fix) the semiconductor substrate 7 (attachment step).

[0048] A plurality of circuit groups are formed on the upper surface of the semiconductor substrate 7, and terminals 21 are formed on the lower surface. When the semiconductor substrate 7 is singulated, the circuit groups and terminals 21 are also divided, resulting in a plurality of semiconductor chips 20 (semiconductor chip main body portions 23). The semiconductor substrate 7 is placed on the adhesive layer 2 so that the upper surface on which the circuits are formed, i.e., the uneven surface on which the unevenness is formed, is in contact with the adhesive layer 2.

[0049] [2A] Next, as shown in FIG. 2( b ), the adhesive tape 100 on which the semiconductor substrate 7 is laminated is placed on a dicer table 200 .

[0050] [3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed with a wafer ring 9, and then a dicing saw (blade) (not shown) is used to cut (diced) the semiconductor substrate 7 as a substrate into individual pieces of the semiconductor substrate 7. This results in semiconductor chips 20 as components on the adhesive tape 100 (dicing step; see FIG. 2(c)).

[0051] At this time, the adhesive tape 100 has a buffering effect and prevents cracks, chips, etc. when the semiconductor substrate 7 is cut.

[0052] 2(c), the cutting of the semiconductor substrate 7 using the blade is carried out so as to reach partway through the thickness direction of the base material 4. This ensures that the semiconductor substrate 7 is divided into individual pieces, and the obtained semiconductor chips 20 (components) are temporarily fixed.

[0053] At this time, cutting water is supplied to the semiconductor substrate 7 while cutting the semiconductor substrate 7 in order to prevent the scattering of dust generated when cutting the semiconductor substrate 7 and to prevent the semiconductor substrate 7 from being unnecessarily heated.

[0054] [4A] Next, the adhesive tape 100 with the semiconductor substrate 7 attached is transferred from a dicing device (not shown) to a pickup device (not shown). Then, with the outer periphery 121 of the adhesive layer 2 fixed to the wafer ring 9, the center portion 310 of the table 300 is pushed upward toward the outer periphery 320. This stretches the adhesive tape 100 radially, forming gaps between the semiconductor chips 20 (components) (expanding step; see FIG. 2(d)).

[0055] In the expanding step, an adhesive tape 100 is used. The adhesive tape 100 includes a substrate 4 containing a resin material and a conductive material, and an adhesive layer 2 containing an adhesive base resin as a main material. The adhesive tape 100 satisfies the following condition: In one embodiment, the adhesive tape 100 is forcibly charged to 5000 V in the TD under conditions of 23° C. and 50% RH, and the time it takes for the charged voltage to decay to 5 V is defined as X seconds. Furthermore, the adhesive tape 100 is forcibly charged to 5000 V in the TD under conditions of 23° C. and 50% RH, and the time it takes for the charged voltage to decay to 5 V is defined as Y seconds. The substrate 4 satisfies the relationship Y−X<1.0 seconds. In addition, in the pressure-sensitive adhesive tape 100 according to another embodiment, when the surface resistance of the side opposite to the pressure-sensitive adhesive layer 2 of the substrate 4 in the initial pressure-sensitive adhesive tape 100 under the conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance of the initial pressure-sensitive adhesive tape 100 in a state in which the initial pressure-sensitive adhesive tape 100 is stretched 100% from the initial length along the MD under the conditions of 23°C and 50% RH is SR2 [Ω], the pressure-sensitive adhesive tape 100 satisfies SR2≦1.0×10 １２ [Ω], and the relationship log(SR2)-log(SR1)≦2.0 is satisfied.

[0056] By using such adhesive tape 100, after the adhesive tape 100 to which the diced semiconductor chips 20 are attached is radially stretched in the expanding step, when the diced semiconductor chips 20 are picked up by pushing them up with the needles 430 in the pick-up step, it is possible to reliably prevent or suppress the generation of static electricity in the semiconductor chips 20. This makes it possible to reliably suppress or prevent the characteristics of the semiconductor chips 20 from deteriorating.

[0057] Thereafter, energy is applied to the adhesive layer 2 to reduce its adhesive strength to the semiconductor chip 20. The application of energy to the adhesive layer 2 may be performed before the expanding step. Furthermore, if individual division is not performed, energy may be applied before the dicing step to reduce the adhesive strength of the adhesive layer 2 to the semiconductor substrate 7.

[0058] [5A] Next, the semiconductor chip 20 is picked up on the stage 400 by suction using a vacuum collet or air tweezers (pick-up step; see FIG. 2(e)).

[0059] In the pick-up process, for example, the needle 430 (not shown in FIG. 2 ) is moved from a state in which it is housed in the ejector head 410 as shown in FIG. 4( a ) to a state in which it is protruded from the ejector head 410 as shown in FIG. 4( b ). That is, the needle 430 is protruded in the thickness direction. As a result, the semiconductor chip 20 attached to the adhesive tape 100 is pushed up. This causes the semiconductor chip 20 to be peeled off from the adhesive tape 100. Thereafter, the semiconductor chip 20 is picked up by suction using a vacuum collet or air tweezers, as shown in FIG. 4( c ).

[0060] By undergoing the above-described steps [1A] to [5A], the semiconductor chip 20 is obtained. That is, with the semiconductor substrate 7 fixed on the adhesive layer 2 of the adhesive tape 100, the adhesive tape 100 is cut from the semiconductor substrate 7 to reach partway in the thickness direction of the base material 4, thereby dividing the semiconductor substrate 7 into individual pieces, thereby forming a plurality of semiconductor chips 20. After that, gaps are formed between the semiconductor chips 20, and then the adhesive tape 100 is stretched in the planar direction while the semiconductor chips 20 are pushed up from the base material 4 side, and then pulled out from the opposite side of the base material 4, thereby separating the semiconductor chips 20 from the adhesive layer 2.

[0061] [6A] Next, the picked-up semiconductor chip 20 is transferred from the vacuum collet or air tweezers to a mounting probe or the like and turned upside down. Then, as shown in FIG. 3A, the semiconductor chip 20 is placed on the interposer 30. At this time, the terminals 21 of the semiconductor chip 20 and the terminals 41 of the interposer 30 face each other with the solder bumps 85 interposed therebetween.

[0062] [7A] Next, heating is performed as shown in FIG. 3(b). This melts the solder bumps 85. As a result, connection portions 81 that connect the terminals 21 and 41 are obtained. Then, the terminals 21 and 41 are electrically connected via the connection portions 81 (mounting step; see FIG. 3(c)).

[0063] [8A] Next, an underfill material (sealing material) made of various resin materials is filled into the gap formed between the semiconductor chip 20 and the interposer 30. Thereafter, the underfill material is cured to form a sealing layer 80 made of the cured underfill material (sealing layer forming step; see FIG. 3(d)).

[0064] [9A] Next, a molded portion 17 (sealing portion) that covers the semiconductor chip 20 is formed on the upper side of the interposer 30. In addition, bumps 70 that are electrically connected to the terminals 41 through vias (not shown) that penetrate the interposer 30 are arranged on the lower side of the interposer 30 (see FIG. 3(e)).

[0065] To seal with the molded portion 17, for example, a mold having an internal space corresponding to the shape of the molded portion 17 to be formed is prepared, and a powdered semiconductor encapsulation material is filled into the internal space. The semiconductor encapsulation material is then heated and hardened in this state to obtain the molded portion 17. The semiconductor device 10 is obtained by the semiconductor device manufacturing method having the steps described above.

[0066] The adhesive tape 100 used in the manufacturing method of such a semiconductor device 10 will be described below.

[0067] <Adhesive Tape> Fig. 5 is a longitudinal sectional view showing an embodiment of the adhesive tape of the present invention. In the following description, the upper side in Fig. 5 will be referred to as "top" and the lower side will be referred to as "bottom".

[0068] <Adhesive Tape According to First Embodiment> First, the adhesive tape 100 according to the first embodiment will be described. The adhesive tape 100 according to the first embodiment is constituted by a laminate including a substrate 4 containing a resin material and a conductive material, and an adhesive layer 2 laminated on one surface of the substrate 4. The adhesive tape 100 is forcibly charged to 5000 V in the TD under conditions of 23°C and 50% RH, and the time it takes for the charged voltage to subsequently decay to 5 V is defined as X seconds. Furthermore, the adhesive tape 100 is forcibly charged to 5000 V in the TD while stretched 50% in the TD under conditions of 23°C and 50% RH, and the time it takes for the charged voltage to subsequently decay to 5 V is defined as Y seconds. The adhesive tape 100 satisfies the relationship Y-X < 1.0 seconds.

[0069] Here, in the pick-up process, when the individual semiconductor chips 20 are picked up by pushing them up with the needles 430, it is necessary to accurately prevent or suppress the generation of static electricity in the semiconductor chips 20.

[0070] With regard to the required characteristics of the pressure-sensitive adhesive tape 100, the inventors have conducted studies and found that, as described above, the base material 4 of the pressure-sensitive adhesive tape 100 contains a resin material and a conductive material. When the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 V in the TD under conditions of 23° C. and 50% RH, and the time required for the charged voltage to subsequently decay to 5 V is defined as X seconds, and when the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 V in the TD under conditions of 23° C. and 50% RH while being stretched 50% in the TD, and the time required for the charged voltage to subsequently decay to 5 V is defined as Y seconds, the pressure-sensitive adhesive tape 100 satisfies the relationship Y−X<1.0 second.

[0071] The forced charging of the pressure-sensitive adhesive tape 100 in the TD direction and the subsequent charging voltage are measured using a charge decay data analyzer (Static Decay Meter Model 406C, manufactured by Electro-Tech Systems, Inc.) under conditions of 23°C and 50% RH. More specifically, the charge decay data analyzer is set so that a voltage is applied in the TD direction to the surface of the substrate 4 of the pressure-sensitive adhesive tape 100 opposite the adhesive layer 2, and then the pressure-sensitive adhesive tape 100 is forcedly charged to 5000 [V], and the time it takes for the charging voltage to decay to 5 [V] is measured.

[0072] After such forced charging in the TD direction, the decay time for the charged voltage to decay to 5 [V] is compared between the pressure-sensitive adhesive tape 100 in an unstretched state (stretch rate 0%) and the pressure-sensitive adhesive tape 100 in a state stretched 50% in the TD direction (stretch rate 50%). When the decay time measured for the former is X [seconds] and the decay time measured for the latter is Y [seconds], the pressure-sensitive adhesive tape 100 satisfies the relational expression (Y-X) of the difference between them, which is less than 1.0 second.

[0073] What this relationship means is that even if the adhesive tape 100 to which the individual semiconductor chips 20 are attached is stretched radially during the expanding process, the amount of change in the tendency of the adhesive tape 100 to become charged is small.

[0074] Therefore, in the pick-up process, when the needle 430 is used to push up and pick up the individual semiconductor chips 20, even if static electricity is unintentionally generated in the semiconductor chips 20, this static electricity can be quickly dissipated. This makes it possible to suppress damage to the semiconductor chips 20 caused by the discharge of static electricity, and to accurately suppress or prevent the characteristics of the semiconductor chips 20 from deteriorating.

[0075] By repeatedly performing steps [5A] to [9A], multiple semiconductor devices 10 can be obtained from a single semiconductor substrate 7. At this time, the repetition of steps [5A] to [9A] may be temporarily stopped while several semiconductor chips 20 remain on the adhesive tape 100, and then steps [5A] to [9A] may be restarted. If the pause period is prolonged, the adhesive tape 100 to which the semiconductor chips 20 are attached may be removed (peeled off) from the dicer table. Even in such cases, static electricity generation on the semiconductor chips 20 can be appropriately suppressed or prevented.

[0076] The stretching rate of 50% refers to a state in which the pressure-sensitive adhesive tape 100 is stretched to 1.5 times its initial length, and the stretching rate of 100%, which will be described later, refers to a state in which the pressure-sensitive adhesive tape 100 is stretched to twice its initial length.

[0077] The stretch ratios of 50% and 100% are set as values ​​that can sufficiently cover the range in which the stretch ratio is increased when the adhesive tape 100 is stretched in the expanding step, even when the stretch ratio is increased from the perspective of pickup efficiency or other reasons. Specifically, when the semiconductor chips 20 are miniaturized, the number of cut lines increases, so a larger stretch ratio is required to maintain the chip spacing. In light of this background, the adhesive tape 100 is likely to maintain its antistatic performance even when subjected to an expanding step with a high stretch ratio, and can suppress the occurrence of problems caused by static electricity.

[0078] The substrate 4 and adhesive layer 2 of this adhesive tape 100 (dicing tape) will be described in detail below.

[0079] <Substrate 4> The substrate 4 contains a resin material and a conductive material as main materials, and has the function of supporting the adhesive layer 2 provided on the substrate 4. Furthermore, in the adhesive tape 100 including the substrate 4, the types of resin material and conductive material are selected, and the contents thereof, etc. are also set, so as to satisfy the relationship Y-X < 1.0 second, as described above.

[0080] The resin material is not particularly limited, but examples thereof include polyethylenes such as low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, and very low-density polyethylene; polypropylenes such as random copolymer polypropylene, block copolymer polypropylene, and homopolypropylene; polyolefin resins (olefin polymers) such as polyvinyl chloride, polybutene, polybutadiene, and polymethylpentene; ionomers such as ethylene-vinyl acetate copolymers, zinc ion crosslinkers, and sodium ion crosslinkers; olefins such as ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester (random, alternating) copolymers, ethylene-propylene copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers. Examples of suitable thermoplastic resins include styrene copolymers, polyester resins (ester polymers) such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and polybutylene naphthalate, polyurethanes, polyimides, polyamides, polyether ketones such as polyether ether ketone, polyethersulfones, polystyrenes, fluororesins, silicone resins, cellulose resins, styrene thermoplastic elastomers (styrene polymers), olefin thermoplastic elastomers (olefin polymers) such as polypropylene thermoplastic elastomers, acrylic resins, polyester thermoplastic elastomers, polyvinyl isoprene, and polycarbonates (carbonate polymers), as well as mixtures of these thermoplastic resins. Among these, ester polymers, styrene polymers, olefin polymers, carbonate polymers, and copolymers containing at least one of these polymers are preferred.

[0081] These resin materials can transmit energy rays such as light (visible light, near-infrared light, ultraviolet light), X-rays, and electron beams, and therefore can be preferably used in the expanding process when energy rays are irradiated onto the adhesive layer 2 from the substrate 4 side by passing through the substrate 4.

[0082] In particular, it is preferable to use an elastomer alone, a mixture of polypropylene and an elastomer, or a mixture of polyethylene and an elastomer as the resin material, which makes it relatively easy to satisfy the relationship Y-X<1.0 seconds.

[0083] Among the above-mentioned styrene-based thermoplastic elastomers, olefin-based thermoplastic elastomers, and polyester-based thermoplastic elastomers, styrene-based thermoplastic elastomers that are block copolymers composed of polystyrene segments and vinyl polyisoprene segments are particularly preferred as this elastomer, which can more easily satisfy the relationship Y−X<1.0 seconds.

[0084] The base material 4 also contains a conductive material dispersed in the resin material contained as the main material. This allows the conductive material to function as an antistatic agent. As a result, an adhesive tape 100 is obtained that satisfies the relationship Y-X < 1.0 second.

[0085] The conductive material is not particularly limited, but examples thereof include conductive polymers, surfactants, permanently antistatic polymers (IDPs), metal materials, metal oxide materials, and carbon-based materials (carbon materials), and one or more of these may be used in combination.

[0086] Examples of conductive polymers include polythiophene, polyaniline, polypyrrole, polyacetylene, PEDOT (poly-ethylenedioxythiophene), PEDOT / PSS, poly(p-phenylene), polyfluorene, polycarbazole, polysilane, and derivatives thereof, and one or more of these can be used in combination.

[0087] Examples of polythiophene or its derivatives include polythiophene, poly(3,4)-ethylenedioxythiophene, and poly(3-thiophene-β-ethanesulfonic acid).

[0088] Examples of polyaniline or its derivatives include polyaniline, polymethylaniline, and polymethoxyaniline.

[0089] Examples of polypyrrole or its derivatives include polypyrrole, poly 3-methylpyrrole, poly 3-octylpyrrole, and the like.

[0090] Examples of surfactants include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

[0091] Examples of permanently antistatic polymers (IDPs) include various IDPs such as polyester amides, polyether ester polyolefins, polyether ester amides, and polyurethanes.

[0092] Examples of metal materials include gold, silver, copper or silver-coated copper, nickel, etc. Powders of these metal materials (metal powders) are also preferably used.

[0093] Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), and tin oxide (SnO ２ Powders of these metal oxide materials (metal oxide powders) are preferably used.

[0094] Examples of carbon-based materials (carbon materials) include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

[0095] Among these, the conductive material is preferably at least one of a conductive polymer, a permanently antistatic polymer (IDP), a metal oxide material, and a carbon-based material, which have small temperature dependence of resistivity, and therefore can reduce the amount of change in resistance value (particularly surface resistance value) even when the substrate 4 is heated, for example.

[0096] The content of the conductive material in the substrate 4 varies slightly depending on the type of conductive material, but is preferably 5.0% by weight to 45.0% by weight, more preferably 5.0% by weight to 30% by weight, and even more preferably 10% by weight to 20% by weight, which makes it possible to easily realize an adhesive tape 100 that satisfies the relationship Y-X<1.0 second.

[0097] The substrate 4 may contain a softener such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, or clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizer, a colorant, or the like.

[0098] The content of the resin material in the substrate 4 is preferably 50% by weight or more and 95% by weight or less, and more preferably 65% ​​by weight or more and 90% by weight or less, which makes it possible to easily realize an adhesive tape 100 that satisfies the relationship Y−X<1.0 second.

[0099] The thickness of the substrate 4 is not particularly limited, but is preferably 30 μm or more and 200 μm or less, and more preferably 40 μm or more and 150 μm or less. When the thickness of the substrate 4 is within this range, the workability of dicing the semiconductor substrate 7 in the dicing process can be improved. Also, an adhesive tape 100 that satisfies the relationship Y-X < 1.0 second can be easily realized. Furthermore, breakage of the substrate 4 can be more reliably prevented when expanding and picking up the semiconductor chip 20.

[0100] The surface roughness Ra of the substrate 4 is preferably, for example, 0.2 μm or more and 2.0 μm or less, and more preferably 0.5 μm or more and 1.5 μm or less. When the surface roughness Ra of the substrate 4 is within this range, the adhesion between the substrate 4 and the adhesive layer 2 is improved. This effectively suppresses or prevents peeling between the substrate 4 and the adhesive layer 2 when the adhesive tape 100 to which the individual semiconductor chips 20 are attached is radially stretched in the expanding process, and when the semiconductor chips 20 are picked up in a state where they are pushed up by the needles 430 in the pick-up process. The surface roughness Ra is the arithmetic mean roughness Ra specified in JIS B 0601:2013. The arithmetic mean roughness Ra is measured using a stylus-type surface roughness measuring instrument specified in JIS B 0633:2001.

[0101] In addition, it is preferable that the substrate 4 has exposed on its surface a functional group, such as a hydroxyl group or an amino group, that is reactive with the constituent materials contained in the adhesive layer 2. This makes it possible to more reliably suppress or prevent the peeling between the substrate 4 and the adhesive layer 2.

[0102] Furthermore, the substrate 4 is preferably one in which the conductive material is uniformly dispersed, but the conductive material may be unevenly distributed on the adhesive layer 2 side or the opposite side of the substrate 4. Furthermore, when the conductive material is unevenly distributed in the substrate 4, the substrate 4 may be a single layer body in which the content of the conductive material varies in the thickness direction, or a laminate body formed by laminating multiple layers with different contents of the conductive material. Furthermore, when the substrate 4 is configured as a laminate (multilayer body), at least one of the type of resin material and the type of conductive material may be different in each layer.

[0103] <Adhesive Layer 2> The adhesive layer 2 adheres to and supports the semiconductor substrate 7 in the dicing step, and when hardened by the application of energy, has enough adhesiveness to allow the semiconductor chip 20 to be picked up in the pick-up step.

[0104] The adhesive layer 2 is made of a resin composition containing, as main materials, (1) a base resin having adhesive properties and (2) a curable resin that hardens the adhesive layer 2 .

[0105] Each component contained in this resin composition will be described in detail below in turn. (1) Base Resin The base resin has adhesiveness and imparts adhesiveness to the adhesive layer 2 with respect to the semiconductor substrate 7 .

[0106] Examples of base resins include various adhesive components such as acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins (adhesives), styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives), and urethane resins (adhesives). Of these, acrylic resins are preferred. Acrylic resins are preferred as base resins because they have excellent heat resistance and are relatively easy and inexpensive to obtain.

[0107] The acrylic resin is a resin having a polymer (homopolymer or copolymer) containing (meth)acrylic acid ester as a main monomer component as a base polymer.

[0108] The (meth)acrylic acid ester is not particularly limited, and examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, and decyl (meth)acrylate. Examples of suitable acrylates include alkyl (meth)acrylates such as methyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, and octadecyl (meth)acrylate; cycloalkyl (meth)acrylates such as cyclohexyl (meth)acrylate; and aryl (meth)acrylates such as phenyl (meth)acrylate. These acrylates may be used alone or in combination of two or more. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate are preferred. Alkyl (meth)acrylates are particularly excellent in heat resistance and are relatively easy and inexpensive to obtain.

[0109] In this specification, the term "(meth)acrylic acid ester" is used to include both acrylic acid ester and methacrylic acid ester.

[0110] The acrylic resin may contain a copolymerizable monomer as a monomer component constituting the polymer, if necessary, for the purpose of improving properties such as cohesive strength and heat resistance.

[0111] The copolymerizable monomer is not particularly limited, and examples thereof include hydroxyl group-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl (meth)acrylate; epoxy group-containing monomers such as glycidyl (meth)acrylate; carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; amide monomers such as (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth)acrylamide, and N-butoxymethyl(meth)acrylamide; amino group-containing monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and t-butylaminoethyl (meth)acrylate; p) Cyano group-containing monomers such as acrylonitrile; olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene; styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene; vinyl ester-based monomers such as vinyl acetate and vinyl propionate; vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether; halogen atom-containing monomers such as vinyl chloride and vinylidene chloride; alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate; and monomers having a nitrogen atom-containing ring, such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine. These may be used alone or in combination of two or more.

[0112] The content of the copolymerizable monomer is preferably 40% by weight or less, and more preferably 10% by weight or less, of the total monomer components constituting the acrylic resin.

[0113] The structure derived from the copolymerizable monomer may be contained at the terminal of the main chain of the polymer constituting the acrylic resin, may be contained in the main chain, or may be contained both at the terminal of the main chain and in the main chain.

[0114] The copolymerizable monomer may be a polyfunctional monomer for the purpose of crosslinking between polymers.

[0115] Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, and hexyl di(meth)acrylate, and these may be used alone or in combination of two or more.

[0116] Ethylene-vinyl acetate copolymers and vinyl acetate polymers can also be used as copolymerizable monomers.

[0117] Such acrylic resins (polymers) are produced by polymerizing a single monomer component or a mixture of two or more monomer components, and polymerization methods such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization are used to polymerize these monomer components.

[0118] From the viewpoint of preventing contamination of the semiconductor substrate 7 and the like during the dicing process, it is preferable that the acrylic resin have a low content of low-molecular-weight substances. Specifically, the weight-average molecular weight of the acrylic resin is preferably set to be 300,000 or more and 5,000,000 or less, more preferably 400,000 or more and 4,000,000 or less, and even more preferably 500,000 or more and 1,500,000 or less. Note that if the weight-average molecular weight of the acrylic resin is less than the lower limit, depending on the type of monomer component, the contamination prevention properties for the semiconductor substrate 7 may be reduced, and adhesive residue may be left when the semiconductor chip 20 is peeled off. Note that the weight-average molecular weight is calculated as a standard polystyrene equivalent by gel permeation chromatography (GPC).

[0119] The acrylic resin preferably has a functional group (reactive functional group) that is reactive with a crosslinking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly a hydroxyl group). This allows the crosslinking agent or the photopolymerization initiator to be linked to the acrylic resin, which is a polymer component. This effectively suppresses or prevents leakage of the crosslinking agent or the photopolymerization initiator from the adhesive layer 2. As a result, the application of energy to the adhesive layer 2 can reliably reduce the adhesive strength of the adhesive layer 2.

[0120] (2) Curable Resin The curable resin has a curing property such that it is cured by, for example, irradiation with energy rays. When the base resin is incorporated into the crosslinked structure of the curable resin through this curing, the adhesive strength of the adhesive layer 2 decreases.

[0121] As the curable resin, for example, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds as functional groups in the molecule that can be three-dimensionally crosslinked by irradiation with energy rays such as ultraviolet rays or electron beams is used. Specific examples include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, and the like. acrylate, 1,4-butylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, esterification products of (meth)acrylic acid and polyhydric alcohol such as glycerin di(meth)acrylate, ester acrylate oligomers, cyanurate compounds having a carbon-carbon double bond-containing group such as 2-propenyl-di-3-butenyl cyanurate, tris(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, 2-hydroxyethyl Examples of suitable isocyanurate compounds having a carbon-carbon double bond-containing group, such as bis(2-acryloxyethyl)isocyanurate, bis(2-acryloxyethyl)2-[(5-acryloxyhexyl)oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, and tris(4-acryloxy-n-butyl)isocyanurate, as well as commercially available oligoester acrylates, aromatic and aliphatic urethane acrylates, and bisphenol A-based epoxy acrylates, can be used alone or in combination of two or more of these. Among these, at least one of an ester of (meth)acrylic acid and a polyhydric alcohol, a urethane acrylate, and a bisphenol A-based epoxy acrylate is preferred.This allows the hardenable resin to be hardened more reliably by applying energy, that is, by irradiating it with energy rays.

[0122] The resin composition may contain two or more curable resins having different weight-average molecular weights. By using two or more curable resins in combination, the degree of crosslinking of the resin due to energy ray irradiation can be easily controlled.

[0123] When the resin composition contains a first curable resin and a second curable resin having a higher weight-average molecular weight, the weight-average molecular weight of the first curable resin is preferably about 100 to 1000, and more preferably about 200 to 500. The weight-average molecular weight of the second curable resin is preferably about 1000 to 30,000, more preferably about 1000 to 10,000, and even more preferably about 2000 to 5,000. Furthermore, the number of functional groups of the first curable resin is preferably 1 to 5, and the number of functional groups of the second curable resin is preferably 6 or more. By satisfying this relationship, the above-mentioned effect can be more significantly exhibited.

[0124] The curable resin is preferably blended in a ratio of 30 to 200 parts by weight, more preferably 50 to 140 parts by weight, per 100 parts by weight of the base resin, thereby obtaining an adhesive layer 2 that can reliably exhibit the functions of the curable resin and the base resin.

[0125] In addition, when a double bond-introduced acrylic resin, i.e., an acrylic resin having a carbon-carbon double bond in a side chain, in the main chain, or at the end of the main chain, is used as the acrylic resin, the addition of a curable resin to the resin composition may be omitted. The double bond-introduced acrylic resin can impart curability to the adhesive layer 2 without a curable resin due to the function of the carbon-carbon double bond.

[0126] (3) Photopolymerization Initiator The resin composition may contain a photopolymerization initiator that facilitates the initiation of polymerization of the curable resin.

[0127] Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'- Dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, Dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzil dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone Benzophenone-4-carboxylic acid esters of acrylates such as benzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxyethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,Examples of the thioxanthone include 4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, halogenated ketones, acylphosphinoxides, acylphosphonates, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, and 2,4,5-triarylimidazole dimers, and these can be used alone or in combination of two or more.

[0128] The photopolymerization initiator is preferably blended in a ratio of 0.1 to 50 parts by weight, more preferably 0.5 to 10 parts by weight, per 100 parts by weight of the base resin, thereby obtaining an adhesive layer 2 that can reliably exhibit the functions of the photopolymerization initiator.

[0129] (4) Crosslinking Agent The resin composition may contain a crosslinking agent. By including a crosslinking agent, the adhesive layer 2 can be given an appropriate hardness.

[0130] The crosslinking agent is not particularly limited, but examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, urea resin-based crosslinking agents, methylol-based crosslinking agents, chelate-based crosslinking agents, aziridine-based crosslinking agents, melamine-based crosslinking agents, polyvalent metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, carboxyl group-containing polymer-based crosslinking agents, etc. Among these, isocyanate-based crosslinking agents are preferred.

[0131] The isocyanate-based crosslinking agent is not particularly limited, but examples thereof include polyisocyanate compounds of polyvalent isocyanates, trimers of polyisocyanate compounds, trimers of isocyanate-terminated compounds obtained by reacting a polyisocyanate compound with a polyol compound, and blocked polyisocyanate compounds in which isocyanate-terminated urethane prepolymers are blocked with phenol, oximes, or the like.

[0132] Examples of polyisocyanates include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, and 2,2,4-trimethyl-hexamethylene diisocyanate. These may be used alone or in combination of two or more. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and hexamethylene diisocyanate is preferred.

[0133] The crosslinking agent is preferably blended in a ratio of 0.01 to 30 parts by weight, and more preferably 0.1 to 20 parts by weight, per 100 parts by weight of the base resin, thereby obtaining an adhesive layer 2 that can reliably exhibit the functions of the crosslinking agent.

[0134] (5) Plasticizer The resin composition may contain a plasticizer, which can improve the flexibility of the adhesive layer 2 when the adhesive strength of the adhesive layer 2 is reduced by the application of energy.

[0135] The plasticizer is not particularly limited, but examples thereof include phthalate ester plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), and DHP (diheptyl phthalate); aliphatic dibasic acid ester plasticizers such as DOA (di-2-ethylhexyl adipate), DIDA (diisodecyl adipate), and DOS (di-2-ethylhexyl sebacate); aromatic carboxylic acid ester plasticizers such as ethylene glycol benzoates; trimellitate ester plasticizers such as TOTM (trioctyl trimellitate); and adipate ester plasticizers, and these may be used alone or in combination of two or more.

[0136] The plasticizer is preferably blended in a ratio of 0.1 to 5.0 parts by weight, more preferably 0.5 to 3.0 parts by weight, per 100 parts by weight of the base resin, thereby reliably improving the flexibility of the adhesive layer 2.

[0137] (6) Other Components The resin composition constituting the adhesive layer 2 may contain, as other components, at least one of a conductive material, a tackifier, an antioxidant, an adhesion adjuster, a filler, a colorant, a flame retardant, a softener, an antioxidant, a surfactant, etc.

[0138] The conductive material is not particularly limited as long as it has conductivity, but the same conductive materials as those described above as the conductive material contained in the base material 4 can be used.

[0139] Adding a conductive material to the adhesive layer 2 can also impart an antistatic function to the adhesive layer 2. This effectively suppresses or prevents static electricity from being generated on the semiconductor chip 20 during the dicing process and the pick-up process.

[0140] The tackifier is not particularly limited, but examples thereof include rosin resins, terpene resins, coumarone resins, phenolic resins, aliphatic petroleum resins, aromatic petroleum resins, and aliphatic-aromatic copolymer petroleum resins, and one or more of these may be used in combination.

[0141] By appropriately selecting the type and content of each of the above components, an adhesive layer 2 is obtained that adheres to and supports the semiconductor substrate 7 during the dicing process, and when energy is applied and the adhesive layer hardens, has enough adhesiveness to allow the semiconductor chip 20 to be picked up during the pick-up process.

[0142] The thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm to 100 μm, more preferably 5 μm to 50 μm, for example. By setting the thickness of the adhesive layer 2 within this range, an adhesive layer 2 having sufficient adhesion to the semiconductor substrate 7 in the dicing step and sufficient peelability in the pick-up step can be obtained.

[0143] The adhesive layer 2 may be a laminate (multilayer body) formed by laminating a plurality of layers made of different resin compositions.

[0144] The resin composition may be one in which the addition of a curable resin is omitted. That is, the adhesive layer 2 may be one in which the adhesive strength does not decrease even when energy is applied.

[0145] As described above, the adhesive tape 100 (dicing tape) having the above-described substrate 4 and adhesive layer 2 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time required for the charged voltage to subsequently decay to 5 [V] is defined as X [seconds]. Furthermore, when the adhesive tape 100 is stretched 50% in the TD direction under conditions of 23°C and 50% RH, the adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time required for the charged voltage to subsequently decay to 5 [V] is defined as Y [seconds]. It is sufficient for the adhesive tape 100 to satisfy the relationship Y−X < 1.0 second, but it is preferable for it to satisfy the relationship Y−X < 0.5 second, and it is more preferable for it to satisfy the relationship 0.05 second < Y−X < 0.3 second. As a result, when the adhesive tape 100 to which the singulated semiconductor chips 20 are attached is stretched radially in the expanding step, it can be said that the amount of change in the tendency of the adhesive tape 100 to become charged due to the stretching of the adhesive tape 100 is set to be smaller. Therefore, after the expanding step, when the singulated semiconductor chips 20 are picked up in a state where they are pushed up by the needles 430 in the pick-up step, the generation of static electricity in the semiconductor chips 20 can be more accurately prevented or suppressed, and the semiconductor chips 20 can be picked up.

[0146] Furthermore, in this case, the time X is preferably 1.0 second or less, and more preferably 0.1 second or more and 0.5 second or less. This means that the adhesive tape 100 is set to be less susceptible to charging before the adhesive tape 100 to which the individual semiconductor chips 20 are attached is radially stretched in the expanding step. This makes it possible to accurately suppress or prevent static electricity from being generated in the semiconductor chips 20 when the semiconductor substrate 7 is cut in the dicing step.

[0147] Furthermore, the time Y is preferably 2.0 seconds or less, and more preferably 0.1 seconds or more and 0.8 seconds or less. This means that the adhesive tape 100 is set to be less susceptible to charging after the adhesive tape 100 to which the individual semiconductor chips 20 are attached is radially stretched in the expanding step. Therefore, it is possible to accurately suppress or prevent static electricity from being generated in the semiconductor chips 20 when the semiconductor chips 20 are picked up in the pick-up step.

[0148] Furthermore, under conditions of 23°C and 50% RH, when the pressure-sensitive adhesive tape 100 is stretched 100% in the TD direction and then forcibly charged to 5000 [V] in the TD direction, and the time period Z1 [seconds] for the charged voltage to subsequently decay to 5 [V] is defined as Z1, this time period Z1 [seconds] is preferably 5.0 seconds or less, and more preferably 3.0 seconds or less. Furthermore, under conditions of 23°C and 50% RH, when the pressure-sensitive adhesive tape 100 is stretched 250% in the TD direction and then forcibly charged to 5000 [V] in the TD direction, and the time period Z2 [seconds] for the charged voltage to subsequently decay to 5 [V] is defined as Z2, this time period Z2 [seconds] is preferably 5.0 seconds or less, and more preferably 4.0 seconds or less. As a result, when the adhesive tape 100 to which the singulated semiconductor chips 20 are attached is stretched radially in the expanding step, it can be said that the degree of tendency for the adhesive tape 100 to become charged due to the stretching of the adhesive tape 100 is reliably set small without changing with the degree of stretching. Therefore, after the expanding step, when the singulated semiconductor chips 20 are picked up in a state where they are pushed up by the needles 430 in the pick-up step, the generation of static electricity in the semiconductor chips 20 can be more reliably prevented or suppressed, and the semiconductor chips 20 can be picked up.

[0149] Such an adhesive tape 100 satisfies the requirement that the relational expression (Y-X) is less than 0.5 seconds, and thus, in a state where a slice of a silicon wafer having a thickness of 0.2 mm and a length of 4 to 6 inches is fixed on the adhesive layer 2 of the adhesive tape 100, the slice is cut so as to reach partway through the thickness direction of the substrate 4, and the slice is divided into individual pieces, forming a plurality of individual pieces each 6 mm in length and width, and then the adhesive layer 2 is subjected to ultraviolet irradiance of 55 W / cm ２ , UV irradiation amount: 200mj / cm ２ After irradiating ultraviolet light under the above conditions, the adhesive tape 100 is stretched 8 mm in the planar direction, and the individual pieces are pushed up 0.4 mm from the substrate 4 side by four pins with a tip curvature radius of 100 μm and spaced 4 mm apart, and then pulled out from the opposite side of the substrate 4. Of the 50 individual pieces, the number of pieces showing discharge marks is preferably 3 or less, more preferably 1 or less. This series of evaluations is performed without using an ionizer in order to perform the evaluation under more severe conditions. This allows the individual pieces to be picked up in a state in which static electricity generation in the individual pieces, i.e., the semiconductor chips 20, is more accurately prevented or suppressed.

[0150] <Adhesive Tape According to Second Embodiment> Next, an adhesive tape 100 according to a second embodiment will be described. The following mainly describes differences from the first embodiment described above, and a description of similar points will be omitted.

[0151] The pressure-sensitive adhesive tape 100 according to the second embodiment (the pressure-sensitive adhesive tape of the present invention) is constituted by a laminate including a substrate 4 containing a resin material and a conductive material, and a pressure-sensitive adhesive layer 2 laminated on one surface of the substrate 4. When the surface resistance of the other surface of the substrate 4 in the initial pressure-sensitive adhesive tape 100 under conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance of the initial pressure-sensitive adhesive tape 100 in a state in which it is stretched 100% from its initial length along the MD under conditions of 23°C and 50% RH is SR2 [Ω], the pressure-sensitive adhesive tape 100 satisfies the following condition: SR2≦1.0×10 １２ [Ω] and the relationship log(SR2)-log(SR1)≦2.0 is satisfied.

[0152] Here, in the pick-up process, when the individual semiconductor chips 20 are picked up by pushing them up with the needles 430, it is necessary to accurately prevent or suppress the generation of static electricity in the semiconductor chips 20.

[0153] With respect to the required properties of the pressure-sensitive adhesive tape 100, the inventors have conducted studies and found that, as described above, the substrate 4 of the pressure-sensitive adhesive tape 100 contains a resin material and a conductive material. When the surface resistance of the substrate 4 opposite to the adhesive layer 2 in the initial pressure-sensitive adhesive tape 100 under conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance of the initial pressure-sensitive adhesive tape 100 (stretch rate 0%) stretched to 100% of its initial length along the MD (stretch rate 100%) under conditions of 23°C and 50% RH is SR2 [Ω], the pressure-sensitive adhesive tape 100 satisfies the following condition: SR2≦1.0×10 １２ [Ω], and the relationship log(SR2)-log(SR1)≦2.0 is satisfied.

[0154] The surface resistance value of the substrate 4 is measured by connecting a probe (manufactured by TREK Corporation, "152P-2P") to a surface resistance meter (manufactured by TREK Corporation, "Model 152"). Specifically, the measurement is performed in a state where two probes connected to the surface resistance meter and spaced apart (center-to-center) by 6.4 mm are brought into contact with the surface of the substrate 4 opposite the adhesive layer 2. This measurement method is suitable for comparing the surface resistance value of the substrate 4 in the initial pressure-sensitive adhesive tape 100 with the surface resistance value of the substrate 4 after the initial pressure-sensitive adhesive tape 100 has been stretched. In other words, this measurement method makes it possible to accurately determine the degree of effect on the surface resistance value of the substrate 4 caused by stretching the pressure-sensitive adhesive tape 100.

[0155] The surface resistance values ​​SR2 and log(SR2)-log(SR1) measured in this manner each satisfy the ranges described above. As a result, the surface resistance value of the substrate 4 is kept low after the expanding step, and the amount of change in the surface resistance value of the substrate 4 before and after the expanding step is also kept low. As a result, the following effects are obtained.

[0156] First, in the expanding step and the pick-up step, it is possible to accurately prevent or suppress the generation of static electricity in the semiconductor chip 20. This suppresses the occurrence of damage caused by static electricity in the picked-up semiconductor chip 20. As a result, it is possible to accurately suppress or prevent the characteristics of the semiconductor chip 20 from deteriorating.

[0157] The substrate 4 of this adhesive tape 100 (dicing tape) will be described below, focusing on the differences from the first embodiment.

[0158] In this embodiment, the substrate 4 contains a resin material as a main material and a conductive material, and has a function of supporting the adhesive layer 2 provided on the substrate 4. In addition, the adhesive tape 100 including the substrate 4 has a surface roughness (SR2) of 1.0×10 as described above. １２ [Ω], and the relationship log(SR2)-log(SR1)≦2.0 is satisfied.

[0159] The resin material may be the same as that described in the first embodiment, thereby providing the same effects as those described above.

[0160] In particular, in this embodiment, by using a single elastomer, a mixture of polypropylene and elastomer, or a mixture of polyethylene and elastomer as the resin material, SR2≦1.0×10 １２ [Ω] and the relationship log(SR2)-log(SR1)≦2.0 can be satisfied relatively easily.

[0161] Among the above-mentioned styrene-based thermoplastic elastomers, olefin-based thermoplastic elastomers, and polyester-based thermoplastic elastomers, styrene-based thermoplastic elastomers, which are block copolymers consisting of polystyrene segments and vinyl polyisoprene segments, are particularly preferred as the elastomer. １２ [Ω] and the relationship log(SR2)-log(SR1)≦2.0 can be more easily satisfied.

[0162] The base material 4 also contains a conductive material dispersed in the resin material contained as the main material. This allows the conductive material to function as an antistatic agent. As a result, SR2≦1.0×10 １２ [Ω] and the adhesive tape 100 that satisfies the relationship log(SR2)-log(SR1)≦2.0 can be obtained.

[0163] As the conductive material, the same materials as those explained in the first embodiment can be suitably used, thereby obtaining the same effects as those described above.

[0164] The content of the conductive material in the substrate 4 varies slightly depending on the type of conductive material, but is preferably 5% by weight or more and 30% by weight or less, and more preferably 10% by weight or more and 20% by weight or less. １２ [Ω] and the adhesive tape 100 that satisfies the relationship log(SR2)-log(SR1)≦2.0 can be easily realized.

[0165] The content of the resin material in the substrate 4 is preferably 50% by weight or more and 95% by weight or less, and more preferably 65% ​​by weight or more and 90% by weight or less. １２ [Ω] and the adhesive tape 100 that satisfies the relationship log(SR2)-log(SR1)≦2.0 can be easily realized.

[0166] The thickness of the substrate 4 is not particularly limited, but is preferably 30 μm or more and 200 μm or less, and more preferably 40 μm or more and 150 μm or less. When the thickness of the substrate 4 is within this range, the dicing workability in the dicing step can be improved. In addition, SR2≦1.0×10 １２ [Ω] and the relationship log(SR2)-log(SR1)≦2.0 can be easily realized. Furthermore, it is possible to more reliably prevent breakage of the base material 4 when expanding and picking up the semiconductor chip 20.

[0167] The surface resistance value SR2 is 1.0×10 ４ Ω or more 1.0×10 １１Ω or less, and preferably 1.0×10 ５ Ω or more 1.0×10 １０ Ω or less is more preferable. Furthermore, the relational expression [log(SR2)-log(SR1)] is preferably 0.01 or more and 1.0 or less, and more preferably 0.05 or more and 0.4 or less. This further reduces the amount of change in the surface resistance value of the substrate 4. As a result, the semiconductor chip 20 can be picked up while more accurately preventing or suppressing the generation of static electricity in the semiconductor chip 20.

[0168] The surface resistance value SR1 is 1.0×10 １２ [Ω] or less, and 1.0 × 10 １１ It is more preferable that the surface resistance of the substrate 4 is Ω or less. This reduces the surface resistance of the substrate 4 to be subjected to the expanding step. Therefore, it is possible to appropriately suppress or prevent static electricity from being generated on the semiconductor chip 20 during the dicing step and the expanding step.

[0169] Furthermore, the surface resistance of the initial adhesive tape 100 when stretched 50% from its initial length along the MD under conditions of 23°C and 50% RH is defined as SR3 [Ω]. At this time, the adhesive tape 100 preferably satisfies log(SR3)-log(SR1)≦1.0, and more preferably satisfies log(SR3)-log(SR1)≦0.3. As a result, when the adhesive tape 100 with the diced semiconductor chips 20 attached thereto is radially stretched in the expanding step, the amount of change in the surface resistance of the substrate 4 is kept low regardless of the stretching rate. Therefore, when the diced semiconductor chips 20 are pushed up by the needles 430 in the pick-up step, the semiconductor chips 20 can be picked up while more accurately preventing or suppressing the generation of static electricity in the semiconductor chips 20.

[0170] The surface resistance value SR3 is 1.0×10 １２ [Ω] or less, and 1.0 × 10 １１It is more preferable that the resistance be [Ω] or less. This makes it possible to more significantly exhibit the effect obtained by setting the relational expression [log(SR3)-log(SR1)].

[0171] The adhesive tape 100 of this embodiment has a SR2≦1.0×10 １２ By satisfying the relationship [Ω] and log(SR2)-log(SR1)≦2.0, the occurrence of discharge marks due to static electricity can be suppressed. This characteristic can be evaluated as follows. First, a silicon wafer slice having a thickness of 0.2 mm and a length of 4 to 6 inches is fixed on the adhesive layer 2 of the adhesive tape 100, and then the slice is cut so as to reach partway through the thickness direction of the substrate 4, thereby dividing the slice into individual pieces. This forms a plurality of individual pieces each 6 mm long and 6 mm wide. Next, the adhesive layer 2 is exposed to ultraviolet light illuminance of 55 W / cm. ２ , UV irradiation amount: 200mj / cm ２ The adhesive tape 100 is irradiated with ultraviolet light under the conditions of . Then, while the adhesive tape 100 is stretched 8 mm in the planar direction, the individual pieces are pushed up 0.4 mm from the substrate 4 side using four pins with a tip curvature radius of 100 μm and spaced 4 mm apart. Then, in this state, the individual pieces are picked up from the opposite side of the substrate 4. Of the 50 individual pieces picked up in this way, the number of individual pieces showing discharge traces is preferably 3 or less, more preferably 1 or less. An adhesive tape 100 that can achieve such evaluation results can more accurately prevent or suppress the generation of static electricity during the pickup process. The above evaluation is performed without using an ionizer in order to perform the evaluation under more severe conditions.

[0172] <Adhesive Tape According to Third Embodiment> Next, an adhesive tape 100 according to a third embodiment will be described. The following mainly describes differences from the first embodiment described above, and a description of similar points will be omitted.

[0173] The pressure-sensitive adhesive tape 100 according to the third embodiment is constituted by a laminate including a substrate 4 containing a resin material and a conductive material, and a pressure-sensitive adhesive layer 2 laminated on one surface of the substrate 4. When the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time required for the charged voltage to subsequently decay to 5 [V] is defined as X [seconds], and further when the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH in a state where the pressure-sensitive adhesive tape 100 is stretched 50% in the TD direction, and the time required for the charged voltage to subsequently decay to 5 [V] is defined as Y [seconds], the pressure-sensitive adhesive tape 100 satisfies the following equation: Y-X< 1.0 second, and when the surface resistance of the other surface of the substrate 4 of the initial pressure-sensitive adhesive tape 100 under conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance of the initial pressure-sensitive adhesive tape 100 in a state where it is stretched 100% from its initial length along the MD under conditions of 23°C and 50% RH is SR2 [Ω], the pressure-sensitive adhesive tape 100 satisfies the relationship SR2≦1.0×10 １２ [Ω], and the relationship log(SR2)-log(SR1)≦2.0 is satisfied. That is, the pressure-sensitive adhesive tape 100 according to this embodiment satisfies both the conditions described in the first embodiment and the conditions described in the second embodiment.

[0174] This allows the above-mentioned effects to be exerted synergistically, more effectively suppressing damage to the semiconductor chip 20 caused by static electricity, and more accurately suppressing or preventing deterioration of the characteristics of the semiconductor chip 20.

[0175] The adhesive tape 100 having the above-described configuration, i.e., the adhesive tape 100 according to the first embodiment, the adhesive tape 100 according to the second embodiment, and the adhesive tape 100 according to the third embodiment, can be manufactured, for example, as follows.

[0176] <Method of manufacturing adhesive tape> Fig. 6 is a vertical cross-sectional view for explaining a method of manufacturing the adhesive tape shown in Fig. 5. In the following description, the upper side in Fig. 6 will be referred to as "top" and the lower side will be referred to as "bottom".

[0177] [1B] First, a substrate 4 is prepared (see FIG. 6(a)). The method for producing the substrate 4 is not particularly limited, but examples thereof include common molding methods such as extrusion molding methods such as a calendar method, an inflation extrusion method, and a T-die extrusion method, and a wet casting method. When the substrate 4 is formed as a laminate, molding methods such as a co-extrusion method and a dry lamination method are used as methods for producing the substrate 4 having such a configuration.

[0178] The substrate 4 can be used without stretching, or may be subjected to uniaxial or biaxial stretching treatment as required.

[0179] Before forming the base material 4 into a sheet, the raw materials are kneaded with various kneading machines or the like. In this case, the kneading temperature is preferably higher than 200°C, more preferably 210°C or higher, and even more preferably 220°C or higher. This allows the raw materials to be kneaded more uniformly, and the uniform dispersion of the antistatic agent in the base material 4 can be further improved. As a result, the above-mentioned condition (i.e., the condition of Y-X<1.0 second for the pressure-sensitive adhesive tape 100 according to the first embodiment, and the condition of SR2≦1.0×10 for the pressure-sensitive adhesive tape 100 according to the second embodiment) can be satisfied. １２ [Ω] and log(SR2)-log(SR1)≦2.0) can be easily manufactured.

[0180] The upper limit of the kneading temperature is set appropriately depending on the raw materials, but is preferably 350° C. or less, and more preferably 300° C. or less, so that the raw materials can be prevented from being denatured by heat.

[0181] The kneading time at the above kneading temperature is preferably 3 minutes or more, more preferably 4 minutes or more. This allows the raw materials to be kneaded more uniformly, and the uniform dispersion of the antistatic agent in the substrate 4 can be further improved, although this depends on the kneading temperature. As a result, if the above-mentioned condition (i.e., the condition of Y-X<1.0 seconds in the pressure-sensitive adhesive tape 100 according to the first embodiment, and the condition of SR2≦1.0×10 in the pressure-sensitive adhesive tape 100 according to the second embodiment) is met, the antistatic agent can be kneaded more uniformly. １２ [Ω] and log(SR2)-log(SR1)≦2.0) can be easily manufactured.

[0182] The upper limit of the kneading time is preferably 20 minutes or less, more preferably 10 minutes or less, which can suppress the denaturation of the raw materials due to heat, although this depends on the kneading temperature.

[0183] As the kneader, for example, a screw kneading extruder or the like is preferably used, and a twin-screw kneading extruder is more preferably used, which allows the raw materials to be kneaded more uniformly.

[0184] The rotation speed of the screw in the screw-type kneading extruder is not particularly limited, but is preferably 5 rpm or more and 100 rpm or less, more preferably 10 rpm or more and 90 rpm or less, and even more preferably 20 rpm or more and 80 rpm or less. This optimizes the shear rate of the raw materials by the screw, allowing the raw materials to be kneaded particularly uniformly. As a result, the uniform dispersion of the antistatic agent in the substrate 4 can be particularly enhanced, and even when the stretching ratio is as high as 50% or more, the above-mentioned condition (i.e., the condition of Y−X<1.0 second in the pressure-sensitive adhesive tape 100 according to the first embodiment, and SR2≦1.0×10 in the pressure-sensitive adhesive tape 100 according to the second embodiment) can be satisfied. １２ [Ω] and log(SR2)-log(SR1)≦2.0) can be easily manufactured.

[0185] [2B] Next, the adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 6(b)). The surface (upper surface) of the substrate 4 may be subjected to a surface treatment such as corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, high-voltage impact exposure treatment, ionizing radiation treatment, primer treatment, or anchor coat treatment in order to improve adhesion between the substrate 4 and the adhesive layer 2.

[0186] The adhesive layer 2 can also be obtained by applying or spraying onto the substrate 4 a liquid material in the form of a varnish, which is made by dissolving the resin composition that is the constituent material of the adhesive layer 2 in a solvent, and then evaporating the solvent.

[0187] The solvent is not particularly limited, but examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethyl formaldehyde, etc., and one or more of these can be used in combination.

[0188] The liquid material can be applied or sprayed onto the substrate 4 by, for example, die coating, curtain die coating, gravure coating, comma coating, bar coating, lip coating, or the like.

[0189] [3B] Next, a portion of the adhesive layer 2 formed on the substrate 4 is removed so as to separate the central side and the peripheral side of the adhesive layer 2. Specifically, a portion of the adhesive layer 2 is removed in a circular shape so as to leave the substrate 4. This separates the adhesive layer 2 into a central portion 122 and a peripheral portion 121 (see FIG. 6(c)).

[0190] An example of a method for removing a portion of the adhesive layer 2 in a circular shape is to punch out a portion of the adhesive layer 2 surrounding the area to be removed, and then remove the adhesive layer 2 located in the punched-out area.

[0191] Furthermore, punching out the area to be removed can be performed using, for example, a method using a roll-shaped mold or a method using a press mold. Among these, a method using a roll-shaped mold that allows continuous production of the pressure-sensitive adhesive tape 100 is preferred.

[0192] The shape of the punched portion of the adhesive layer 2 may be any shape as long as it allows the outer periphery 121 of the adhesive layer 2 to be fixed to the wafer ring. Specifically, in addition to a circular shape, it may be an elliptical shape, an oval shape such as a bale shape, a square shape, a polygonal shape such as a pentagon, or the like.

[0193] [4B] Next, the separator 1 is laminated on the adhesive layer 2 formed on the substrate 4. This results in an adhesive tape 100 in which the adhesive layer 2 is covered with the separator 1 (see FIG. 6(d)).

[0194] The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, and examples thereof include a lamination method using a roll and a lamination method using a press. Among these, the lamination method using a roll is preferred from the viewpoint of productivity, which allows for continuous production.

[0195] The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

[0196] The surface of the separator 1 may be subjected to a release treatment. Examples of the release treatment include coating with a release agent, forming fine irregularities, etc. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based agents.

[0197] In the method for manufacturing a semiconductor device using the adhesive tape 100 described above, the adhesive tape 100 from which the separator 1 has been peeled off is used.

[0198] Furthermore, when peeling the separator 1 from the adhesive layer 2 covered with the separator 1, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. This can prevent peeling from occurring at any place other than the interface between the adhesive layer 2 and the separator 1.

[0199] Although the pressure-sensitive adhesive tape of the present invention has been described above, the present invention is not limited thereto.

[0200] For example, any component capable of exerting the same function may be added to each layer of the pressure-sensitive adhesive tape of the present invention. Furthermore, the substrate may have an antistatic layer provided on the surface opposite to the pressure-sensitive adhesive layer.

[0201] Furthermore, the configuration of each layer provided in the pressure-sensitive adhesive tape may be replaced with any other layer that can exert the same function, or any other layer may be added.

[0202] Furthermore, in a semiconductor device formed using an adhesive tape, the molded portion may be omitted.

[0203] The adhesive tape may also be used to process substrates other than semiconductor substrates, such as glass substrates such as soda-lime glass, borosilicate glass, and quartz glass, ceramic substrates such as alumina, silicon nitride, and titanium oxide, resin material substrates such as acrylic, polycarbonate, and rubber, and metal material substrates.

[0204] Next, specific examples of the present invention will be described, but the present invention is not limited to the descriptions of these examples.

[0205] 1. Preparation of Raw Materials First, the raw materials used in the production of the pressure-sensitive adhesive tapes of each Example and Comparative Example are shown below.

[0206] (Polyolefin Resin 1) As polyolefin resin 1, polypropylene (homo PP, manufactured by Sumitomo Chemical Co., Ltd., "FS2011DG-2", MFR 2.0) was prepared.

[0207] (Elastomer 1) As elastomer 1, a hydrogenated styrene-based thermoplastic elastomer (SEBS, manufactured by Asahi Kasei Chemicals Corporation, "H1062", styrene content 18% by weight) was prepared.

[0208] (Conductive Material 1) A polyether-based antistatic agent ("Pelectron PVL" manufactured by Sanyo Chemical Industries, Ltd.) was prepared as the conductive material 1. The conductive material 1 is a material containing a polyolefin / polyether copolymer as a main component.

[0209] (Conductive Material 2) A polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "Pelectron AS") was prepared as the conductive material 2. The conductive material 2 is a material containing a polyamide / polyether copolymer as a main component.

[0210] (Conductive Material 3) Polythiophene (Arakawa Chemical Industries, Ltd., "Aracoat AS625") was prepared as the conductive material 3. In addition to the conductive material, AS625 contains an acrylic resin as a polymer binder.

[0211] (Base Resin 1) As base resin 1, an acrylic copolymer was prepared by mixing at least two of butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, acrylic acid, 2-hydroxyethyl acrylate, N,N-dimethylacrylamide, and vinyl acetate, and subjecting the mixture to solution polymerization in a toluene solvent by a conventional method.

[0212] The glass transition temperature and weight average molecular weight of base resin (acrylic copolymer) 1 were as follows: Base resin 1 (glass transition temperature: -14°C, weight average molecular weight: 500,000)

[0213] (Curable Resin 1) As the curable resin 1, dipentaerythritol hexaacrylate (manufactured by Daicel Allnex Corporation, product number: DPHA), which is an esterification product of (meth)acrylic acid and a polyhydric alcohol, was prepared.

[0214] (Crosslinking Agent 1) As crosslinking agent 1, polyisocyanate (manufactured by Tosoh Corporation, product number: Coronate L) was prepared.

[0215] (Photopolymerization initiator 1) As photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared.

[0216] 2. Preparation of Pressure-Sensitive Adhesive Tape [Example 1] A resin composition containing polyolefin resin 1 (50.0 wt%), elastomer 1 (30.0 wt%), and antistatic agent 1 (20.0 wt%) was extruded using an extruder to prepare a 150.0 μm-thick substrate 4. The substrate 4 was mixed at a temperature of 230° C. for 5 minutes at a screw rotation speed of 50 rpm.

[0217] Next, a liquid material was prepared containing a resin composition containing base resin 1 (100.0 parts by weight), curable resin 1 (100.0 parts by weight), crosslinker 1 (5.0 parts by weight), and photopolymerization initiator 1 (5.0 parts by weight). This liquid material was bar-coated onto substrate 4 so that the thickness of adhesive layer 2 after drying would be 10.0 μm, and then dried at 80° C. for 1 minute to form adhesive layer 2 on the upper surface (one side) of substrate 4, thereby obtaining adhesive tape 100 of Example 1.

[0218] Examples 2 to 6, Comparative Examples 1 to 4 The pressure-sensitive adhesive tapes of Examples 2 to 6 and Comparative Examples 1 to 4 were produced in the same manner as in Example 1, except that the constituent materials contained in the resin composition used to form the substrate 4 and the constituent materials contained in the resin composition used to form the adhesive layer 2 were those shown in Table 1, and the contents of the constituent materials were changed as shown in Table 1 to form substrate 4 and adhesive layer 2 having thicknesses shown in Table 1. The kneading temperature, kneading time, and screw rotation speed for substrate 4 are also shown in Table 1.

[0219] Furthermore, for the conductive material 3 of Comparative Example 1, the material was bar coated on the surface of the substrate 4 opposite the adhesive layer 2 so that the thickness of the antistatic layer after drying would be 0.3 μm, and then dried at 80° C. for 10 minutes to form an antistatic layer on the other surface of the substrate 4.

[0220] Furthermore, for the conductive material 3 of Comparative Example 2, the material was bar coated on the surface of the substrate 4 opposite the adhesive layer 2 so that the thickness of the antistatic layer after drying would be 0.5 μm, and then dried at 80° C. for 10 minutes to form an antistatic layer on the other surface of the substrate 4.

[0221] Example 7 An adhesive tape of Example 7 was produced in the same manner as in Example 1, except that the substrate 4 was formed as follows.

[0222] That is, polyolefin resin 1 (60.0 wt%) and elastomer 1 (40.0 wt%) were kneaded in a twin-screw kneader to prepare kneaded product 1, and polyolefin resin 1 (50.0 wt%), elastomer 1 (30.0 wt%), and antistatic agent 1 (20.0 wt%) were kneaded in a twin-screw kneader to prepare kneaded product 2. These kneaded products 1 and 2 were then extruded into a film using a co-extruder to prepare substrate 4, which was a laminate consisting of a first layer having a thickness of 50.0 μm derived from kneaded product 1 and a second layer having a thickness of 50.0 μm derived from kneaded product 2. The kneading temperature, kneading time, and screw rotation speed for both kneaded product 1 and kneaded product 2 were adjusted as shown in Table 1. In the next step, adhesive layer 2 was formed on substrate 4, but only on the first layer side of the first and second layers.

[0223] Example 8 An adhesive tape of Example 8 was produced in the same manner as in Example 7, except that the second layer of the substrate 4 was formed to have the thickness shown in Table 1.

[0224]

[0225] 3. Evaluation The pressure-sensitive adhesive tapes obtained in each of the Examples and Comparative Examples were evaluated by the following methods.

[0226] 3-1. Measurement of Decay Time of Electrostatic Voltage After Forcibly Charging the Substrate 4 <1A> First, for the pressure-sensitive adhesive tape 100 of each Example and Comparative Example, a test piece measuring 60 mm wide x 150 mm long was prepared, and a charge decay data analyzer ("STATIC DECAY METER MODEL 406C" manufactured by Electro-Tech Systems, Inc.) was set so that a voltage was applied in the TD direction to the surface of the substrate 4 of each test piece opposite the adhesive layer 2 under conditions of 23°C and 50% RH. The pressure-sensitive adhesive tape 100 was then forcibly charged to 5000 [V], and the time it took for the electrostatic voltage to decay to 5 [V] was measured as the decay time X [seconds] in an unstretched state (stretch ratio 0%).

[0227] <2A> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared, and the initial pressure-sensitive adhesive tape 100 (test piece) was stretched 50% from its initial length along the TD at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH with a chuck distance of 100 mm. In this state, the pressure-sensitive adhesive tape 100 was forcibly charged to 5,000 [V] using the same charge decay data analyzer as above, and the time taken for the charged voltage to decay to 5 [V] was measured as the decay time Y [seconds] when the pressure-sensitive adhesive tape 100 was stretched 50% (stretching ratio 50%).

[0228] <3A> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared, and the initial pressure-sensitive adhesive tape 100 (test piece) was stretched to 100% in the TD from its initial length at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH with a chuck distance of 100 mm. In this state, the pressure-sensitive adhesive tape 100 was forcibly charged to 5,000 [V] using the same charge decay data analyzer as above, and the time it took for the charged voltage to decay to 5 [V] was measured and defined as the decay time Z1 [seconds] when the pressure-sensitive adhesive tape 100 was stretched to 100% (stretching ratio 100%).

[0229] <4A> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared, and the initial pressure-sensitive adhesive tape 100 (test piece) was stretched 250% from its initial length along the TD at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH with a chuck distance of 100 mm. In this state, the pressure-sensitive adhesive tape 100 was forcibly charged to 5,000 [V] using the same charge decay data analyzer as above, and the time it took for the charged voltage to decay to 5 [V] was measured and defined as the decay time Z2 [seconds] when the pressure-sensitive adhesive tape 100 was stretched 250% (stretching ratio 250%).

[0230] <5A> Based on the measured decay times X and Y, the magnitude of the relation (Y-X) was determined.

[0231] 3-2. Measurement of Surface Resistivity of Substrate 4 on the Side Opposite to Adhesive Layer 2 <1B> First, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm wide x 150 mm long was prepared, and the surface resistance of the substrate 4 on the side opposite to the adhesive layer 2 of each test piece was measured under conditions of 23°C and 50% RH by connecting a probe (TREK Corporation, "152P-2P") to a surface resistance meter (TREK Corporation, "Model 152").

[0232] That is, two probes spaced 6.4 mm apart (center-to-center) were placed in contact with the surface of the substrate 4 opposite the adhesive layer 2, and measurements were taken using the surface resistance meter. The surface resistance between the two probes was measured as the surface resistance SR1 [Ω] of the surface of the substrate 4 opposite the adhesive layer 2 in the initial adhesive tape 100.

[0233] <2B> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared, and the initial pressure-sensitive adhesive tape 100 (test piece) was stretched along the MD by 50% from its initial length at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH with a chuck distance of 100 mm. In this state, the surface resistance value SR3 [Ω] of the side of the substrate 4 opposite to the adhesive layer 2 when stretched along the MD by 100% from its initial length was measured using the same surface resistance meter as above.

[0234] <3B> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared, and the initial pressure-sensitive adhesive tape 100 (test piece) was stretched to 100% from its initial length along the MD at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH with a chuck distance of 100 mm. In this state, the surface resistance value SR2 [Ω] of the side of the substrate 4 opposite to the adhesive layer 2 in the state stretched to 100% from its initial length along the MD was measured using the same surface resistance meter as above.

[0235] <4B> Furthermore, based on the measured surface resistance values ​​SR1, SR2, and SR3, the magnitudes of the relational expressions [log(SR2)-log(SR1)] and [log(SR3)-log(SR1)] were determined.

[0236] 3-3. Evaluation of discharge marks observed on the individual pieces <1C> A slice of a silicon wafer (manufactured by SUMCO Corporation) with a thickness of 0.2 mm and a length of 4 inches was fixed on the adhesive layer 2 of the adhesive tape 100, and the slice was cut so as to reach partway through the thickness direction of the substrate 4, and the slice was individualized to form multiple silicon chips (individual pieces) with a length and width of 6 mm. Thereafter, the adhesive layer 2 was exposed to ultraviolet light with an illuminance of 55 W / cm. ２ , UV irradiation amount: 200mj / cm ２ The adhesive layer 2 was cured by applying energy by irradiating it with ultraviolet light under the conditions of (a).

[0237] <2C> Next, while the adhesive tape 100 was stretched 8 mm in the planar direction, the individual pieces were pushed up 0.4 mm from the substrate 4 side using four pins with a tip curvature radius of 100 μm and spaced 4 mm apart, and the silicon chips were picked up by suction using a vacuum collet.

[0238] By going through the above-described steps <1C> and <2C>, picking up of 50 silicon chips was repeatedly carried out for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples.

[0239] Then, for the adhesive tape 100 of each example and each comparative example, the silicon chips obtained were visually inspected for the presence or absence of discharge marks on the silicon chips, and evaluated according to the following criteria.

[0240] (Evaluation criteria) A: No discharge marks were observed for 50 or 49 silicon chips. B: No discharge marks were observed for 48 or 47 silicon chips. C: No discharge marks were observed for 40 or more but less than 47 silicon chips. D: No discharge marks were observed for less than 40 silicon chips. The evaluation results obtained as described above are shown in Table 2.

[0241]

[0242] As shown in Table 2, the adhesive tape 100 of each example satisfies the relation Y−X<1.0 seconds, or SR2≦1.0×10 １２[Ω] and at least one of the following relational expressions is satisfied: log(SR2)-log(SR1)≦2.0. As a result, when picking up the silicon chip, the generation of static electricity in the silicon chip can be suppressed, and the formation of discharge marks in the silicon chip can be suppressed.

[0243] In contrast, the adhesive tapes of the comparative examples satisfy the relational expression Y−X<1.0 seconds and SR2≦1.0×10 １２ [Ω] and the relationship of log(SR2)-log(SR1)≦2.0 were not satisfied. As a result, static electricity was generated in the silicon chip when the silicon chip was picked up, and as a result, discharge marks were observed on the silicon chip.

[0244] According to the present invention, it is possible to provide an adhesive tape that can accurately prevent or suppress the generation of static electricity on a substrate or component when the substrate or component attached to the adhesive tape is picked up in a state where the adhesive tape is pushed up from the adhesive tape side after the adhesive tape is radially stretched. Thus, the present invention has industrial applicability.

[0245] REFERENCE SIGNS LIST 1 separator 2 adhesive layer 4 substrate 7 semiconductor substrate 9 wafer ring 10 semiconductor device 17 molded portion 20 semiconductor chip 21 terminal 23 semiconductor chip body 30 interposer 41 terminal 70 bump 80 sealing layer 81 connection portion 85 solder bump 100 adhesive tape 121 outer periphery 122 center 200 dicer table 300 table 310 center 320 outer periphery 400 stage 410 ejector head 430 needle

Claims

1. An adhesive tape comprising a substrate and an adhesive layer laminated on one side of the substrate, the substrate containing a base resin with adhesive properties as its main material, and used to temporarily fix at least one of a substrate and a component, wherein the substrate comprises a resin material and a conductive material, and wherein the adhesive tape is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time it takes for the charged voltage to subsequently decay to 5 [V] is defined as X [seconds], and the adhesive tape is forcibly charged to 5000 [V] in the TD direction while stretched 50% in the TD direction, and the time it takes for the charged voltage to subsequently decay to 5 [V] is defined as Y [seconds], where Y - X < 1.0 seconds is satisfied.

2. The adhesive tape according to claim 1, wherein the time X [seconds] is 1.0 seconds or less.

3. The adhesive tape according to claim 1 or 2, wherein the adhesive tape is stretched 100% in the TD direction and then forcibly charged to 5,000 V in the TD direction, and the time it takes for the charged voltage to decay to 5 V is defined as Z1 seconds, and the time Z1 seconds is 5.0 seconds or less.

4. The adhesive tape according to any one of claims 1 to 3, wherein the adhesive tape is stretched 250% in the TD direction and then forcibly charged to 5,000 V in the TD direction, and the time taken for the charged voltage to decay to 5 V is defined as Z2 seconds, and the time Z2 seconds is 5.0 seconds or less.

5. The adhesive tape according to any one of claims 1 to 4, wherein the content of the conductive material in the substrate is 5.0% by weight or more and 45.0% by weight or less.

6. When the surface resistance of the other surface of the substrate of the initial pressure-sensitive adhesive tape under conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance of the initial pressure-sensitive adhesive tape when stretched 100% from the initial length along the MD under conditions of 23°C and 50% RH is SR2 [Ω], SR2≦1.0×10 １２ The pressure-sensitive adhesive tape according to any one of claims 1 to 5, wherein the resistance [Ω] and log(SR2)-log(SR1)≦2.0 are satisfied.

7. An adhesive tape comprising a substrate and an adhesive layer containing an adhesive base resin as a main material and laminated on one side of the substrate, the adhesive tape being used for temporarily fixing at least one of a substrate and a component, wherein the substrate contains a resin material and a conductive material, and wherein the surface resistance of the other side of the substrate in the initial adhesive tape under conditions of 23°C and 50% RH is SR1 [Ω], and the surface resistance of the initial adhesive tape when stretched 100% from the initial length along the MD under conditions of 23°C and 50% RH is SR2 [Ω], SR2≦1.0×10 １２ [Ω] and log(SR2)-log(SR1)≦2.

0.

8. The pressure-sensitive adhesive tape according to claim 6 or 7, wherein, under conditions of 23°C and 50% RH, when the surface resistance of the initial pressure-sensitive adhesive tape is SR3 [Ω] in a state in which the initial length of the pressure-sensitive adhesive tape is stretched 50% along the MD from the initial length, the relationship log(SR3) - log(SR1) ≦ 1.0 is satisfied.

9. SR1≦1.0×10 １２ The pressure-sensitive adhesive tape according to any one of claims 6 to 8, which satisfies [Ω].

10. The adhesive tape according to any one of claims 1 to 9, wherein the conductive material is at least one of a conductive polymer, a permanently antistatic polymer (IDP), a metal oxide material, and a carbon material.

11. An adhesive tape according to any one of claims 1 to 10, wherein the resin material is an ester polymer, a styrene polymer, an olefin polymer, a carbonate polymer, or a copolymer containing at least one of these polymers.

12. The adhesive tape according to any one of claims 1 to 11, wherein the base resin is an acrylic resin.

13. An adhesive tape according to any one of claims 1 to 12, wherein the adhesive layer further contains a curable resin that hardens when energy is applied, and the adhesive strength of the adhesive layer to at least one of the substrate and the component temporarily fixed on the adhesive layer is reduced when energy is applied.

14. The adhesive tape according to any one of claims 1 to 13, wherein the substrate has a thickness of 30 μm or more and 200 μm or less.

15. The adhesive tape according to any one of claims 1 to 14, wherein the adhesive layer has a thickness of 5 μm or more and 100 μm or less.

16. The adhesive tape according to any one of claims 1 to 15, which is used when, with the substrate fixed on the adhesive layer, the adhesive tape is cut from the substrate so as to reach partway in the thickness direction of the base material, thereby forming the plurality of components by dividing the substrate, and then, while stretching the adhesive tape in the planar direction, the components are pushed up from the base material side and pulled out from the opposite side of the base material, thereby detaching them from the adhesive layer.

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