Plasma source, plasma source assembly, and substrate processing apparatus

Abstract

A plasma source assembly according to an aspect of the present invention may include: a gas discharge plate having a plurality of gas discharge holes formed therethrough; and at least one plasma source coupled on the gas discharge plate to supply an activated process gas to the gas discharge plate, wherein the at least one plasma source includes: an reaction body including a plurality of body parts and a plurality of insulating parts; a plurality of magnetic cores; a plurality of windings for receiving power from a power supply unit and inducing a magnetic force in the plurality of magnetic cores; a sensor unit for measuring a voltage-current phase difference between a voltage and a current output from the power supply unit; and a control unit for comparing the voltage-current phase difference received from the sensor unit with a reference value to determine whether plasma is turned on or off.

Description

Plasma source, plasma source assembly and substrate processing device

[0001] The present invention relates to a semiconductor manufacturing device, and more specifically, to a plasma source, a plasma source assembly, and a substrate processing device using the same.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source assembly outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By using a remote plasma generator in this way, a desired reactant can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage on the substrate can be prevented.

[0003] Furthermore, to reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, a structure is being studied that couples the plasma source assembly to the gas injection unit of the process chamber. This structure can increase the activity ratio of radicals supplied from the plasma source assembly to the substrate, thereby enhancing process efficiency.

[0004] However, the aforementioned remote plasma generator or plasma source assembly is designed to use power under limited conditions, and thus has a problem in that plasma ignition failure frequently occurs.

[0005] The present invention is intended to solve the above-mentioned problems, and a technical problem according to the present invention is to provide a plasma source, a plasma source assembly, and a substrate processing device using the same, which can increase the success rate of plasma ignition and monitor whether the plasma is on or off.

[0006] However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0007] According to an aspect of the present invention for solving the technical problem of the present invention, a plasma source may include a reaction body including a plurality of body parts each having gas diffusion spaces formed therein, and a plurality of insulating parts coupled between the plurality of body parts so that the gas diffusion spaces are in communication with each other, and the gas diffusion spaces within the plurality of body parts form a toroidal channel as a whole, a plurality of magnetic cores each surrounding the plurality of body parts and spaced apart from each other along the toroidal channel, a plurality of windings arranged to wind the plurality of magnetic cores and inducing a magnetic force within the plurality of magnetic cores through power supplied from a power supply unit, a sensor unit for measuring a voltage-current phase difference output from the power supply unit, and a control unit for controlling the formation of plasma within the toroidal channel by applying an ignition voltage from the power supply unit to at least one of the plurality of windings, and determining whether plasma is turned on / off by comparing the voltage-current phase difference received from the sensor unit with a reference value.

[0008] According to the above plasma source, the control unit can control the power supply unit to apply a maintenance voltage lower than the ignition voltage from the power supply unit to the plurality of windings when the voltage-current phase difference is lower than the reference value.

[0009] According to the above plasma source, the control unit can control the power supply unit to repeat the step of applying an ignition voltage from the power supply unit to at least one of the plurality of windings at least once when the voltage-current phase difference is greater than the reference value.

[0010] According to the above plasma source, the reaction body includes at least one optical sensor for monitoring plasma within the toroidal channel, and the control unit compares the voltage-current phase difference received from the sensor unit with a reference value and determines whether a predetermined optical signal is received from the optical sensor, thereby determining whether the plasma within the toroidal channel is on or off.

[0011] According to the plasma source, the control unit can control the power supply unit to repeat the step of applying the ignition voltage to at least one of the plurality of windings at least once when the voltage-current phase difference received from the sensor unit is greater than a reference value and a predetermined optical signal is not received from the optical sensor.

[0012] According to the above plasma source, the plurality of body parts include a plurality of switches each connected between the ends of two adjacent body parts of the plurality of body parts so that the plurality of body parts are electrically connected or electrically cut off by bypassing the plurality of insulating parts, and the control unit controls the power supply unit and the plurality of switches to control the formation of plasma in the toroidal channel, and can control at least one switch among the plurality of switches to be turned on when plasma ignition occurs in the toroidal channel.

[0013] According to the above plasma source, the control unit can control the plurality of switches to turn off at least one switch that is turned on when the plasma is ignited and then maintained after plasma ignition in the toroidal channel, thereby controlling all of the plurality of switches to a turn-off state.

[0014] According to the above plasma source, the control unit can sequentially select at least one switch among the plurality of switches to perform a turn-on operation each time plasma ignition is performed within the toroidal channel.

[0015] According to another aspect of the present invention for solving the technical problem of the present invention, a plasma source assembly may include a gas discharge plate having a plurality of gas discharge holes formed therein, and a plasma source coupled to the gas discharge plate to supply an activated process gas to the gas discharge plate.

[0016] According to the above plasma source assembly, an insulating member interposed between the gas discharge plate and the plasma source may be included.

[0017] According to the above plasma source assembly, the gas discharge plate may be formed of an insulating material.

[0018] According to the above plasma source assembly, the plasma source may include a first plasma source coupled to the gas discharge plate, and a second plasma source coupled to the gas discharge plate and disposed outside the first plasma source.

[0019] According to another aspect of the present invention for solving the technical problem of the present invention, a substrate processing device may include a process chamber having a reaction space formed therein, a chamber lid coupled to an upper portion of the process chamber, a substrate support portion coupled to a lower portion of the process chamber to support a substrate within the reaction space, a plasma source assembly coupled to the chamber lid, and a gas injection portion having a gas injection plate formed thereon, the gas injection plate being disposed below the plasma source assembly and facing the substrate support portion, and for injecting a process gas activated by the plasma source assembly onto the substrate support portion.

[0020] According to some embodiments of the present invention, including a plasma source assembly and a substrate processing method, the voltage-current phase difference between voltage and current can be monitored to determine whether the plasma is on or off, and further, the on-off of a switch between insulating parts can be controlled to increase the success rate of plasma ignition.

[0021] Of course, the scope of the present invention is not limited by these effects.

[0022] FIG. 1 is a schematic diagram showing a plasma source according to one embodiment of the present invention.

[0023] Figure 2 is a schematic perspective view showing the plasma source of Figure 1.

[0024] Figure 3 is a schematic diagram showing power transmission in the plasma source of Figure 1.

[0025] FIG. 4 is a graph showing an operation method of a plasma source according to some embodiments of the present disclosure.

[0026] FIG. 5 is a graph showing the voltage-current phase difference between voltage and current in a plasma source according to some embodiments of the present disclosure.

[0027] FIGS. 6 and 7 are flowcharts showing operating methods of a plasma source according to some embodiments of the present invention.

[0028] FIG. 8 is a time chart showing an operating method of a plasma source according to some embodiments of the present invention.

[0029] FIGS. 9 to 12 are schematic cross-sectional views showing a plasma source assembly according to some embodiments of the present invention.

[0030] FIGS. 13 and 14 are schematic cross-sectional views showing substrate processing devices according to some embodiments of the present invention.

[0031] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0032] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0033] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0034] FIG. 1 is a schematic diagram showing a plasma source (200) according to one embodiment of the present invention, FIG. 2 is a schematic perspective view showing the plasma source (200) of FIG. 1, and FIG. 3 is a schematic diagram showing power transmission in the plasma source (200) of FIG. 1.

[0035] Referring to FIGS. 1 to 3, the plasma source (200) may include a reaction body (210), a plurality of magnetic cores (220a, 220b, 220c), and a plurality of windings (224a, 224b, 224c).

[0036] The reaction body (210) may include a plurality of body parts (212a, 212b, 212c) and a plurality of insulating parts (216). The body parts (212a, 212b, 212c) may have gas diffusion spaces (214a, 214b, 214c) formed therein, respectively. More specifically, the body part (212a) may have a gas diffusion space (214a) formed therein, the body part (212b) may have a gas diffusion space (214b) formed therein, and the body part (212c) may have a gas diffusion space (214c) formed therein. The cross-sectional shapes of the gas diffusion spaces (214a, 214b, 214c) may have various shapes, such as a circle, an ellipse, and a polygon.

[0037] In some embodiments, the body portions (212a, 212b, 212c) may be formed by coating an insulating material on a conductive material. For example, the body portions (212a, 212b, 212c) may be formed by coating an insulating material, such as a metal oxide or metal nitride, on a metal.

[0038] Insulating members (216) may be coupled between the body members (212a, 212b, 212c). The insulating members (216) may be interposed between the body members (212a, 212b, 212c) so that the body members (212a, 212b, 212c) are not directly electrically connected to each other but are spaced apart from each other. For example, the insulating members (216) may have a flow path formed therein so that the gas diffusion spaces (214a, 214b, 214c) within the body members (212a, 212b, 212c) communicate with each other. The insulating members (216) may be formed of a suitable insulating material, such as an oxide, a nitride, a polymer resin, or the like.

[0039] In some embodiments, in the reaction body (210), the gas diffusion spaces (214a, 214b, 214c) may form a toroidal channel (214) as a whole. More specifically, the body portions (212a, 212b, 212c) may be formed to correspond to structures that are formed by carving out the overall shape of the toroidal channel (214) so ​​as to define the toroidal channel (214) as a whole. For example, if the toroidal channel (214) is formed as a donut shape as a whole, the body portions (212a, 212b, 212c) may be formed to correspond to structures that are formed by dividing the donut shape into multiple pieces.

[0040] In some embodiments, the reaction body (210) may be formed with a gas inlet (2123) for introducing gas into the toroidal channel (214) and an opening (2124) for discharging gas.

[0041] The magnetic cores (220a, 220b, 220c) may be spaced apart from each other along the toroidal channel (214) while each surrounding the reaction body (210). For example, the magnetic cores (220a, 220b, 220c) may surround the body parts (212a, 212b, 212c), respectively. More specifically, the magnetic core (220a) may be arranged to surround the outer circumference of the body part (212a), the magnetic core (220b) may be arranged to surround the outer circumference of the body part (212b), and the magnetic core (220c) may be arranged to surround the outer circumference of the body part (212c). For example, the magnetic cores (220a, 220b, 220c) may include a magnetic material, such as a ferrite material.

[0042] In some embodiments, each of the magnetic cores (220a, 220b, 220c) may be formed as a single closed structure or may have a structure in which multiple segments are combined.

[0043] The windings (224a, 224b, 224c) may be arranged to wind the magnetic cores (220a, 220b, 220c). For example, the winding (224a) may be arranged to wind the magnetic core (220a), the winding (224b) may be arranged to wind the magnetic core (220b), and the winding (224c) may be arranged to wind the magnetic core (220c).

[0044] The windings (224a, 224b, 224c) can induce a magnetic force within the magnetic cores (220a, 220b, 220c) through power supplied from the power supply (230). For example, when the windings (224a, 224b, 224c) are wound in the width direction of the magnetic cores (220a, 220b, 220c), when power is applied to the windings (224a, 224b, 224c), a magnetic force can be induced within the magnetic cores (220a, 220b, 220c) along the circumferential direction thereof.

[0045] The power supply unit (230) may include a power supply device and supply RF power to the windings (224a, 224b, 224c) via a resonant circuit unit (not shown). For example, the power supply unit (230) may include a switching mode power supply (SMPS). Furthermore, the power supply unit (230) may include a full bridge or half bridge switching circuit for DC-AC conversion. The resonant circuit may include an LCC, etc.

[0046] In the plasma source (200), the number of body parts (212a, 212b, 212c) is shown as an example and may be selected as two or more. Furthermore, depending on the number of body parts (212a, 212b, 212c), the number of magnetic cores (220a, 220b, 220c), windings (224a, 224b, 224c), and insulating parts (216) may vary.

[0047] In some embodiments, the body portions (212a, 212b, 212c) may each include first body portions (2121a, 2121b, 2121c) and second body portions (2122a, 2122b, 2122c). For example, the body portion (212a) may include a first body portion (2121a) and a second body portion (2122a) coupled to each other, the body portion (212b) may include a first body portion (2121b) and a second body portion (2122b) coupled to each other, and the body portion (212c) may include a first body portion (2121c) and a second body portion (2122c) coupled to each other.

[0048] For example, the first body parts (2121a, 2121b, 2121c) may have a first length and a first width, and the second body parts (2122a, 2122b, 2122c) may have a second length and a second width. The first length may be greater than the second length, and the first width may be greater than the second width. For example, the first length may be at least three times greater than the second length, and the first width may be 1.1 to 1.4 times greater than the second width. Here, the length may mean the circumferential length of the first body parts (2121a, 2121b, 2121c) or the second body parts (2122a, 2122b, 2122c), for example, the length of an arc, and the width may mean the cross-sectional length of the first body parts (2121a, 2121b, 2121c) or the second body parts (2122a, 2122b, 2122c), for example, the diameter.

[0049] Flanges (2126, 2127) may be formed on both ends of the second body parts (2122a, 2122b, 2122c). For example, one side of the first body parts (2121a, 2121b, 2121c) may be respectively coupled to the flanges (2127) on one side of the second body parts (2122a, 2122b, 2122c), and insulating parts (216) may be respectively coupled between the flanges (2126) on the other side of the second body parts (2122a, 2122b, 2122c) and the other sides of the first body parts (2121a, 2121b, 2121c). The magnetic cores (220a, 220b, 220c) can be arranged to surround the second body parts (2122a, 2122b, 2122c).

[0050] In some embodiments, at least one gas inlet (2123) may be formed on the upper surface (A1) of the first body parts (2121a, 2121b, 2121c), and at least one opening (2124) may be formed on the lower surface (A2) of the first body parts (2121a, 2121b, 2121c). Gas introduced into the toroidal channel (214) through the gas inlet (2123) may be activated by plasma and discharged to the lower portion of the plasma source (200) through the opening (2124). For example, the opening (2124) may be formed in a slit shape.

[0051] In some embodiments, the gas inlet (2123) may be formed on a side of the first body portions (2121a, 2121b, 2121c).

[0052] In some embodiments, cooling lines (2125) for the flow of a cooling medium may be formed within at least a portion of each of the body portions (212a, 212b, 212c). The cooling medium may be circulated through the cooling lines (2125), thereby cooling the reaction body (210). For example, the cooling lines (2125) may be formed as cooling channels on one surface of the body portions (212a, 212b, 212c). The cooling medium may include cooling water.

[0053] In some embodiments, a sensor unit (235) may be provided to measure the voltage-current phase difference, i.e., the VI phase difference (φ in FIG. 5), between the voltage (V in FIG. 5) and the current (I in FIG. 5) output from the power supply unit (230). The sensor unit (235) may be a sensor capable of measuring a change in voltage (V) or current (I) over time, and may include, for example, a VI sensor. The sensor unit (235) may measure the VI phase difference (φ) from the voltage and current signals. The sensor unit (235) may be installed within the power supply unit (230) or may be arranged between the power supply unit (230) and the windings (224a, 224b, 224c).

[0054] In some embodiments, at least one optical sensor, such as optical sensors (OP1, OP2, OP3), may be provided in the reaction body (210) to monitor plasma within the toroidal channel (214). For example, the optical sensor may detect light emitted when plasma is formed and output an on / off signal depending on whether light is detected. For example, the optical sensor may receive a predetermined optical signal emitted from the plasma.

[0055] In some embodiments, a plurality of switches (SW1, SW2, SW3) may be respectively connected between adjacent two of the body parts (212a, 212b, 212c) such that the body parts (212a, 212b, 212c) are electrically connected or electrically disconnected by bypassing the insulators (216). For example, a switch (SW1) may be connected between the ends of two adjacent body parts (212a, 212b), a switch (SW2) may be connected between the ends of two adjacent body parts (212b, 212c), and a switch (SW3) may be connected between the ends of two adjacent body parts (212c, 212a).

[0056] The switches (SW1, SW2, SW3) may have various structures that can control turning on or off electrical connections. For example, the switches (SW1, SW2, SW3) may include transistors that form electrical channels according to a control signal.

[0057] In the plasma source (200), the number of body parts (212a, 212b, 212c) is shown as an example and may be selected as two or more. Furthermore, depending on the number of body parts (212a, 212b, 212c), the number of magnetic cores (220a, 220b, 220c), windings (224a, 224b, 224c), insulating parts (216), and switches (SW1, SW2, SW3) may vary.

[0058] According to the plasma source (200), when power is applied from the power supply unit (230) to the windings (224a, 224b, 224c), a magnetic force is induced in the magnetic cores (220a, 220b, 220c), and by this induced magnetic force, a current can be induced in the toroidal channel (214) penetrating the inside of the magnetic cores (220a, 220b, 220c). By this current, a gas can be activated in the toroidal channel (214), thereby forming a plasma atmosphere.

[0059] In the plasma source (200), a magnetic force is induced in the magnetic cores (220a, 220b, 220c) from the current flowing in the windings (224a, 224b, 224c), and the structure in which a current is induced in the toroidal channel (214) by this induced magnetic force may correspond to the principle of a transformer. In this respect, the plasma source (200) may also be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0060] In the transformer structure, the windings (224a, 224b, 224c) can serve as a primary coil, and the toroidal channel (214) defined by the body parts (212a, 212b, 212c) can serve as a secondary coil. In this respect, the windings (224a, 224b, 224c) can be referred to as a primary coil or a primary winding, and the current flowing in the windings (224a, 224b, 224c) can be referred to as a primary current. Furthermore, the current induced in the toroidal channel (214) can also be referred to as a secondary current.

[0061] The control unit (250) can control the formation of plasma within the toroidal channel (214). For example, the control unit (250) can control the formation of plasma by controlling the power applied from the power supply unit (230) to at least one of the windings (224a, 224b, 224c). When forming plasma through the plasma source (200), the control may be different in the ignition step for generating plasma and the sustaining step.

[0062] For example, the ignition phase may require higher power or higher field than the sustain phase. As illustrated in Fig. 4, at the initial ignition time (t I In the case of ignition voltage (V) from the power supply (230) I) is output, and is maintained after ignition (t I After that) the maintenance voltage (V S ) can be output. The holding voltage (V S ) is the ignition voltage (V I ) can be relatively smaller than that of the LCC resonant circuit. In the case of the LCC resonant circuit, the gain can vary depending on the load impedance. For example, when the load impedance is high during ignition, high-frequency driving is required, and when the load impedance decreases after ignition, low-frequency driving becomes possible.

[0063] Furthermore, in the ignition stage, an inert gas (noble gas) can be used to lower the ignition voltage even at relatively high loads, and in the maintenance stage, a process gas or a mixture of a process gas and an inert gas can be used.

[0064] Meanwhile, if plasma formation does not occur at once during the ignition stage, the ignition voltage (V I ) can be repeatedly applied multiple times. Accordingly, it is necessary to monitor whether plasma is formed or maintained within the toroidal channel (214).

[0065] In some embodiments, the control unit (250) may monitor the state of the plasma based on the VI phase difference (φ) received from the sensor unit (235) when controlling the formation of the plasma within the toroidal channel (214). For example, the control unit (250) may compare the VI phase difference between the voltage (V) and the current (I) with a reference value to determine whether the plasma is on / off.

[0066] More specifically, if the VI phase difference (φ) is greater than the reference value, the control unit (250) determines that the plasma in the toroidal channel (214) is abnormal or turned off, and applies an ignition voltage (V) from the power supply unit (230) to at least one of the windings (224a, 224b, 224c). I) can be controlled to repeat the step of approving the power supply (230) at least once. The reference value can be set through experimentation and can be set in the range of 20 to 90 degrees.

[0067] In some embodiments, the control unit (250) can determine whether the plasma in the toroidal channel (214) is on or off by determining whether a predetermined optical signal is received from the optical sensors (OP1, OP2, OP3). This plasma monitoring by the optical signal can be performed simultaneously with the monitoring of the voltage-current phase difference between the voltage and current or additionally performed with the monitoring of the VI phase difference. For example, the control unit (250) can apply the ignition voltage (V) to at least one of the windings (224a, 224b, 224c) if the VI phase difference (φ) is greater than a reference value and a predetermined optical signal is not received from the optical sensors (OP1, OP2, OP3). I ) can be authorized.

[0068] Below, a plasma monitoring method using a sensor unit (235) and optical sensors (OP1, OP2, OP3) is described in more detail.

[0069] FIG. 6 and FIG. 7 are flowcharts showing operating methods of a plasma source (200) according to some embodiments of the present invention.

[0070] Referring to FIG. 6, the operating method of the plasma source (200) may include an ignition step (S10), a voltage-current phase difference measurement step (S20), a voltage-current phase difference judgment step (S30), and a maintenance step (S60).

[0071] For example, in the ignition step (S10), the ignition voltage (V) is applied from the power supply (230) to the windings (224a, 224b, 224c). I) can be applied. Next, in the voltage-current phase difference measurement step (S20), the VI phase difference between the voltage and current can be measured using the sensor unit (235). Next, in the voltage-current phase difference determination step (S30), the control unit (250) can compare the VI phase difference with a reference value to determine whether the plasma is on / off. For example, if the VI phase difference is less than the reference value, the control unit (250) determines that the plasma is normally generated and moves on to the sustain voltage application step (S60), and if the VI phase difference is greater than or equal to the reference value, the process can be repeated from the ignition step (S10). In the sustain step (S60), a sustain voltage can be applied from the power supply unit (230) to the windings (224a, 224b, 224c).

[0072] Referring to FIG. 7, the operating method of the plasma source (200) may include an ignition step (S10), a voltage-current phase difference measuring step (S20), a voltage-current phase difference judging step (S30), an optical signal measuring step (S40), an optical signal judging step (S50), and a maintenance step (S60). If the VI phase difference is smaller than a reference value in the voltage-current phase difference judging step (S30), an optical signal measuring step (S40) may follow to supplementally monitor the plasma. In the optical signal measuring step (S40), optical signals may be measured from optical sensors (OP1, OP2, OP3). In the optical signal judging step (S50), whether the optical signals received from the optical sensors (OP1, OP2, OP3) are on / off may be judged. If the optical signal is ON, it is determined that the plasma is normally generated, and the maintenance step (S60) continues. If the optical signal is not ON, the process can be repeated from the ignition step (S10).

[0073] Below, plasma control using switches (SW1, SW2, SW3) is described in more detail.

[0074] In some embodiments, the control unit (250) can control the formation of plasma within the toroidal channel (214) by controlling the power supply unit (130) and / or the switches (SW1, SW2, SW3). When secondary current is induced within the toroidal channel (214), the voltage can be applied mostly across the insulators (216). Therefore, plasma ignition within the toroidal channel (214) can be initiated within the insulators (216). When all of the switches (SW1, SW2, SW3) are turned off, the total voltage during plasma ignition can be equally divided into 1 / 3 between the insulators (216). In this respect, the control of the switches (SW1, SW2, SW3) can affect the magnitude of the voltage applied between the insulators (216).

[0075] For example, the control unit (250) can control at least one of the switches (SW1, SW2, SW3) to be turned on when the plasma in the toroidal channel (214) is ignited. In this case, there is no voltage drop between the insulating parts (216) corresponding to the turned-on switches among the switches (SW1, SW2, SW3), so that the voltage applied to the insulating parts (216) corresponding to the turned-off switches can increase.

[0076] During plasma ignition, it may be advantageous to apply a large voltage to one or more insulating portions (216) rather than to distribute the voltage evenly across all insulating portions (216). For example, the success rate of plasma ignition may be increased by applying the full voltage to only one insulating portion (216) or by applying half of the full voltage to each of two insulating portions (216).

[0077] In some embodiments, the control unit (250) can control the switches (SW1, SW2, SW3) so that the number of turns-off of the switches (SW1, SW2, SW3) when the plasma in the toroidal channel (214) is maintained after ignition is greater than the number of turns-off of the switches (SW1, SW2, SW3) when the plasma is ignited. Accordingly, when the plasma is ignited, a relatively high voltage can be applied between some of the insulating portions (216), and when the plasma is maintained, the voltage can be applied more evenly between the insulating portions (216). For example, when the plasma is maintained after ignition of the plasma in the toroidal channel (214), the control unit (250) can control all switches (SW1, SW2, SW3) to be turned off by turning off at least one switch among the switches (SW1, SW2, SW3) that was turned on when the plasma was ignited.

[0078] In some embodiments, the control unit (250) may, when the plasma is ignited, keep only one of the switches (SW1, SW2, SW3) turned off and turn on the remaining switches, and when the plasma is maintained, turn off the remaining switches that were turned on when the plasma was ignited so that all of the switches (SW1, SW2, SW3) are turned off. In this case, when the plasma is ignited, the entire voltage within the toroidal channel (214) may be applied between one insulation portion (216). This control may enable local plasma ignition within the toroidal channel (214) when plasma ignition is difficult.

[0079] In some embodiments, the control unit (250) may perform a turn-on operation by selecting at least one switch among the switches (SW1, SW2, SW3) each time ignition of the plasma in the toroidal channel (214) is performed. For example, when the control unit (250) wants to repeatedly process a process using the plasma source assembly (100), the control unit (250) may sequentially change at least one switch controlled to a turn-on state among the switches (SW1, SW2, SW3) for each process cycle unit to change the plasma ignition position each time. Here, the process cycle unit may be distinguished based on when plasma ignition is newly required, and may be defined as a unit for processing substrates in units of lots or foup, for example.

[0080] Accordingly, when the plasma source (200) is repeatedly used, it is possible to prevent voltage from being concentrated only on specific areas within the body parts (212a, 212b, 212c) and causing concentrated damage to specific areas. Accordingly, damage to components of the plasma source (200) can be reduced, thereby increasing maintenance time and improving operational efficiency.

[0081] Below, a plasma control method using a sensor unit (235), optical sensors (OP1, OP2, OP3) and switches (SW1, SW2, SW3) is described.

[0082] FIG. 8 is a time chart showing an operation method of a plasma source (200) according to some embodiments of the present invention.

[0083] Referring to Fig. 8, as described above, when generating plasma, an ignition voltage (V) is applied from the power supply (230) to the windings (224a, 224b, 224c). I ) is applied, and the maintenance voltage (V) is applied when maintaining the voltage. S) can be applied. At ignition, one of the switches (SW1, SW2, SW3) can be turned off, two can be turned on, and all can be turned off during maintenance. At ignition, an optical signal can be received from the optical sensors (OP1, OP2, OP3), and a VI phase difference signal can be received from the sensor unit (235).

[0084] When process cycles (process cycle 1, process cycle 2, process cycle 3, process cycle 4) are repeated, the switches that are in the off state among the switches (SW1, SW2, SW3) can be sequentially changed. Accordingly, as described above, damage to components of the plasma source (200) can be reduced.

[0085] Accordingly, by using the plasma source (200), the ignition success rate can be increased by controlling the switches (SW1, SW2, SW3), and the operating efficiency can be increased by monitoring whether the plasma is on / off using the sensor unit (235) and optical sensors (OP1, OP2, OP3).

[0086] FIG. 9 is a schematic perspective view showing a plasma source assembly (3000) according to one embodiment of the present invention.

[0087] Referring to FIG. 9, the plasma source assembly (3000) may include a gas discharge plate (7000) and at least one plasma source (3100).

[0088] The plasma source (3100) may have substantially the same structure as the plasma source (200) described above, and thus, reference may be made to the configuration and description of the plasma source (200). A plurality of gas discharge holes (7100) may be formed in the gas discharge plate (7000). The gas discharge holes (7100) are hole structures penetrating the gas discharge plate (7000) and may be formed in the shape of a cylinder, cone, pyramid, or the like.

[0089] The plasma source (3100) may be coupled to the gas discharge plate (7000) to supply an activated process gas to the gas discharge plate (7000). For example, the gas discharge holes (7100) may be formed on the gas discharge plate (7000) to conform to the shape of the plasma source (3100) so that the gas discharge holes (7100) are in communication with the openings (2124) of the plasma source (3100) and are aligned with the openings (2124).

[0090] In this way, by combining the gas discharge plate (7000) with the plasma source (3100), the activated process gas generated in the plasma source (3100) can be easily supplied to the lower portion of the plasma source (3100) through the opening (2124) and then sprayed through the gas discharge plate (7000), and conversely, particles and the like can be prevented from flowing into the plasma source (3100) from outside the gas discharge plate (7000).

[0091] In some embodiments, an insulating member (3170) may be interposed between the plasma source (3100) and the gas discharge plate (7000) to electrically insulate the two.

[0092] In some embodiments, the gas discharge plate (7000) may be formed of an insulating material.

[0093] FIGS. 10 to 12 are schematic drawings showing plasma source assemblies (3000a, 3000b, 3000c) according to some embodiments of the present invention.

[0094] Referring to FIGS. 10 to 12, the plasma source assemblies (3000a, 3000b, 3000c) may each include a gas discharge plate (7000), a first plasma source (3200), and a second plasma source (3100).

[0095] The second plasma source (3100) may have substantially the same structure as the aforementioned plasma source (200), and thus reference may be made to the configuration and description of the plasma source (200). The first plasma source (3200) may have a similar structure as the aforementioned plasma source (200), except that some of the configurations may be modified from the plasma source (200) in that the diameter thereof is smaller. For example, in the first plasma source (3200), the reaction body (210) may be composed of one or two pieces instead of three, and accordingly, one or two magnetic cores may be provided.

[0096] The first plasma source (3200) may be provided with a first opening (2124a) through which a process gas activated by the first plasma source (3200) is discharged, and the second plasma source (3100) may be provided with a second opening (2124b) through which a process gas activated by the second plasma source (3100) is discharged. The description of the opening (2124) of the plasma source (200) may be referred to for the first opening (2124a) and the second opening (2124b).

[0097] The first plasma source (3200) and the second plasma source (3100) may be respectively coupled to the gas discharge plate (7000). For example, the second plasma source (3100) may be coupled to the gas discharge plate (7000) outside the first plasma source (3200). More specifically, the first plasma source (3200) may be coupled to the inside of the gas discharge plate (7000), and the second plasma source (3100) may be coupled to the outside of the gas discharge plate (7000) so as to surround the first plasma source (3200).

[0098] In some embodiments, the gas exhaust plate (7000) may include a first gas exhaust plate (7000a) to which a first plasma source (3200) is coupled and a second gas exhaust plate (7000b) to which a second plasma source (3100) is coupled. For example, the first gas exhaust plate (7000a) may refer to an inner portion of the gas exhaust plate (7000), and the second gas exhaust plate (7000b) may refer to an outer portion of the gas exhaust plate (7000). An insulating member (3270) may be interposed between the first gas exhaust plate (7000a) and the first plasma source (3200), and an insulating member (3170) may be interposed between the second gas exhaust plate (7000b) and the second plasma source (3100).

[0099] The process gas activated in the first plasma source (3200) can be supplied to the first gas discharge plate (7000) through the first opening (2124a), and the process gas activated in the second plasma source (3100) can be supplied to the second gas discharge plate (7000b) through the second opening (2124b).

[0100] In this way, by arranging a plurality of plasma sources, for example, a first plasma source (3200) and a second plasma source (3100), on a gas discharge plate (7000), the amount of emission of activated process gas, for example, radicals, can be controlled for each region. For example, the amount of radicals emitted from the first plasma source (3200) and the second plasma source (3100) can be controlled depending on the size and shape of the first opening (2124a) and the second opening (2124b).

[0101] In some embodiments, as illustrated in FIG. 10, in the plasma source assembly (3000a), the first gas discharge plate (7000a) and the second gas discharge plate (7000b) may be integrally formed on the same plane so that the first opening (2124a) of the first plasma source (3200) and the second opening (2124b) of the second plasma source (3100) are arranged at the same height. In this case, by controlling the process gas supply conditions and / or plasma generation conditions of the first plasma source (3200) and the second plasma source (3100), a controlled process gas can be supplied to each region through the gas discharge plate (7000).

[0102] In some embodiments, as illustrated in FIGS. 11 and 12, in the plasma source assembly (3000b, 3000c), the first gas discharge plate (7000a) and the second gas discharge plate (7000b) may be coupled to each other at different heights so that the heights of the first opening (2124a) and the second opening (2124b) are arranged at different heights. For example, the gas discharge plate (7000) may be formed in a stepped structure. Through this structure, the process gas supplied from the inner side of the gas discharge plate (7000), i.e., the first gas discharge plate (7000a), may be dispersed relatively far, and the process gas supplied from the outer side, i.e., the second gas discharge plate (7000b), may be dispersed relatively less. The first gas discharge plate (7000a) and the second gas discharge plate (7000b) can be formed separately and then combined, or can be formed integrally and then subjected to a processing process such as bending to form the gas discharge plate (7000).

[0103] For example, as illustrated in FIG. 11, the first gas discharge plate (7000a) may be positioned higher than the second gas discharge plate (7000b) so that the first opening (2124a) in the plasma source assembly (3000b) is positioned higher than the second opening (2124b). In this case, the supply density of the process gas on the outside of the gas discharge plate (7000) may be higher than on the inside.

[0104] As another example, as illustrated in FIG. 12, in the plasma source assembly (3000c), the first gas discharge plate (7000a) and the second gas discharge plate (7000b) may be coupled to each other in a right-angled configuration. Accordingly, the first gas discharge plate (7000a) may be arranged on a plane so that the first opening (2124a) faces downward, and the second gas discharge plate (7000b) may be arranged on a vertical plane so that the second opening (2124b) faces sideways. In this case, the supply density of the process gas on the outside of the gas discharge plate (7000) may be higher than that on the inside.

[0105] The plasma source assemblies (3000, 3000a, 3000b, 3000c) can utilize the advantages of the plasma source (200) by using the plasma source (200). Furthermore, the plasma source assemblies (3000, 3000a, 3000b, 3000c) can control the density of the discharged plasma by changing the arrangement of the first plasma source (3200) and the second plasma source (3100).

[0106] The above-described plasma source assemblies (3000, 3000a, 3000b, 3000c) refer to a structure in which plasma sources (3100, 3200) are coupled to a gas discharge plate (7000), but are not limited to this terminology, and the plasma source and the plasma source assembly are not distinguished and may all be referred to as plasma sources or may all be referred to as plasma source assemblies.

[0107] FIG. 13 is a schematic cross-sectional view showing a substrate processing device (5000a) according to one embodiment of the present invention.

[0108] Referring to FIG. 13, the substrate processing device (5000a) may include a process chamber (1000), a gas injection unit (4000), a substrate support unit (2000), and at least one plasma source assembly (3000a).

[0109] The process chamber (1000) may have a reaction space (A) formed therein. The process chamber (1000) may include a chamber lid (1100a) at the top to seal the interior. The process chamber (1000) may be connected to a vacuum pump (1300) through an exhaust unit (1200) to form a vacuum atmosphere. Furthermore, the process chamber (1000) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (A) and a gate (not shown) for opening and closing the entrance.

[0110] The gas injection unit (4000) may be coupled to the process chamber (1000) to inject process gas supplied from the outside of the process chamber (1000) into the reaction space (A). For example, the gas injection unit (4000) may be coupled to the upper portion of the process chamber (1000) so as to face the substrate support unit (2000). The gas injection unit (4000) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (A).

[0111] In some embodiments, the gas injection unit (4000) may be understood as a structure coupled to the process chamber (1000) or may be understood as a structure coupled to the chamber lid (1100a).

[0112] The plasma source assembly (3000a) is for activating a process gas supplied from the outside, and the description of FIG. 10 can be referenced. The plasma source assembly (3000a) can be coupled to the process chamber (1000) facing the substrate support (2000). For example, the plasma source assembly (3000a) can be coupled to the chamber lid (1100a). The plasma source assembly (3000a) can supply an activated process gas, such as radicals, to a lower portion thereof, for example, an internal space of a gas injection unit (4000).

[0113] For example, the first plasma source assembly (3200) may be disposed in a donut shape on the center portion of the chamber lid (1100a), and the second plasma source assembly (3100) may be disposed on the edge portion of the chamber lid (1100a) in a donut structure with a larger diameter surrounding the donut structure of the first plasma source assembly (3200). The first plasma source (3200) may be supplied with a process gas through the first gas pipe (3280), and the second plasma source (3100) may be supplied with a process gas through the second gas pipe (3180). This plasma source assembly (3000a) enables the activated process gas to be injected throughout the center and edge portions of the gas injection unit (4000).

[0114] In some embodiments, the gas injection unit (4000) may include a distribution plate (4100) for injecting an activated process gas supplied from the plasma source assembly (3000a) into the reaction space (A). A plurality of injection holes may be formed in the distribution plate (4100) in a vertical direction. Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the top lid (1100) and the distribution plate (4100).

[0115] In some embodiments, the gas injection unit (4000) may further include a separate gas inlet to supply process gas into the interior thereof without passing through the plasma source assembly (3000a). In this case, the gas injection unit (4000) may supply process gas activated through the plasma source assembly (3000a) and process gas inactivated without passing through the plasma source assembly (3000a) together.

[0116] The substrate support (2000) may be coupled to the process chamber (1000) to support the substrate (S) within the reaction space (A). For example, the substrate support (2000) may be installed in the process chamber (1000) facing the gas injection unit (4000). Furthermore, the substrate support (2000) may include a heater (not shown) for heating the substrates (S) therein. Since the substrate support (2000) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0117] The shape of the upper plate of the substrate support member (2000) generally corresponds to the shape of the substrate (S), but is not limited thereto, and may be provided in various shapes so as to stably secure the substrate (S). Furthermore, a shaft (1200) is connected to the upper plate of the substrate support member (2000), and the shaft (1200) may be connected to an external motor (not shown) so as to be able to rise and fall. Optionally, a means for maintaining airtightness, such as a bellows tube, may be connected between the shaft (1200) and the process chamber (1000).

[0118] In some embodiments, the substrate support (2000) may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate (S) and secure it thereon. In this case, the electrostatic electrode may generate an electrostatic force using DC power.

[0119] Fig. 14 is a schematic cross-sectional view showing a substrate processing device (5000b) according to another embodiment of the present invention. The substrate processing device (5000b) is a device that adds or modifies some components from the substrate processing device (5000a) of Fig. 13, and since the two embodiments can be referenced to each other, any overlapping descriptions will be omitted.

[0120] Referring to FIG. 14, the substrate processing device (5000b) may include a process chamber (1000), a gas injection unit (4000), a substrate support unit (2000), and a plasma source assembly (3000b).

[0121] The plasma source assembly (3000b) is for activating a process gas supplied from the outside, and the description of FIG. 11 can be referenced. The plasma source assembly (3000b) can be coupled to the process chamber (1000) facing the substrate support (2000). For example, the plasma source assembly (3000b) can be coupled to the chamber lid (1100a). The plasma source assembly (3000b) can supply an activated process gas, such as radicals, to a lower portion thereof, for example, an internal space of a gas injection unit (4000).

[0122] According to the plasma source assembly (3000b), since the height of the first plasma source (3200) is higher than that of the second plasma source (3100), the amount of process gas supplied at the edge of the substrate (S) can be made higher than the amount supplied at the center. This adjustment of the amount of process gas supplied can compensate for the fact that the plasma density is relatively low at the edge of the substrate (S), thereby allowing the reaction to occur uniformly on the substrate (S).

[0123] The above-described substrate processing devices (5000a, 5000b) can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0124] Meanwhile, the substrate processing devices (5000a, 5000b) illustrate a structure using plasma source assemblies (3000a, 3000b), but may be modified to use a plasma source assembly (3000c).

[0125] According to the substrate processing devices (5000a, 5000b), since the plasma source assemblies (3000a, 3000b) are directly connected to the gas injection units (4000), an activated process gas, for example, radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of radicals. Accordingly, when the plasma source assemblies (3000a, 3000b) are used, the recombination of radicals can be reduced compared to when a conventional remote plasma device is used, thereby increasing the supply efficiency of radicals and thus enhancing process reliability.

[0126] In addition, according to the substrate processing devices (5000a, 5000b), the ignition success rate can be increased by controlling the switches (SW1, SW2, SW3) using the plasma source assemblies (3000a, 3000b), and the operating efficiency can be increased by monitoring whether the plasma is on / off using the sensor unit (235) and optical sensors (OP1, OP2, OP3).

[0127] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A reaction body comprising a plurality of body parts each having gas diffusion spaces formed therein, and a plurality of insulating parts connected between the plurality of body parts so that the gas diffusion spaces are in communication with each other, wherein the gas diffusion spaces within the plurality of body parts form a toroidal channel as a whole; A plurality of magnetic cores spaced apart from each other along the toroidal channel, each surrounding the plurality of body parts; A plurality of windings arranged to wind the plurality of magnetic cores and inducing a magnetic force within the plurality of magnetic cores through power supplied from a power supply unit; A sensor unit for measuring the voltage-current phase difference output from the power supply unit; and A control unit that controls the formation of plasma in the toroidal channel by applying an ignition voltage from the power supply to at least one of the plurality of windings, and determines whether the plasma is on or off by comparing the voltage-current phase difference received from the sensor unit with a reference value, Plasma source.

2. In paragraph 1, A plasma source, wherein the control unit controls the power supply unit to apply a maintenance voltage lower than the ignition voltage to the plurality of windings when the voltage-current phase difference is lower than the reference value.

3. In paragraph 1, A plasma source, wherein the control unit controls the power supply unit to repeat the step of applying an ignition voltage from the power supply unit to at least one of the plurality of windings at least once when the voltage-current phase difference is greater than the reference value.

4. In paragraph 1, At least one optical sensor provided in the reaction body for monitoring plasma within the toroidal channel, The control unit compares the voltage-current phase difference received from the sensor unit with a reference value, determines whether a predetermined optical signal is received from the optical sensor, and determines whether the plasma in the toroidal channel is on or off. Plasma source.

5. In paragraph 4, A plasma source, wherein the control unit controls the power supply unit to repeat the step of applying the ignition voltage to at least one of the plurality of windings at least once when the voltage-current phase difference received from the sensor unit is greater than a reference value and a predetermined optical signal is not received from the optical sensor.

6. In paragraph 1, The plurality of body parts include a plurality of switches each connected between the ends of two adjacent body parts of the plurality of body parts so that the plurality of body parts are electrically connected or electrically cut off by bypassing the plurality of insulating parts, The control unit controls the power supply unit and the plurality of switches to control the formation of plasma in the toroidal channel, and controls at least one of the plurality of switches to be turned on when plasma is ignited in the toroidal channel. Plasma source.

7. In paragraph 6, The control unit controls the plurality of switches by turning off at least one switch that is turned on during plasma ignition when plasma is maintained after ignition within the toroidal channel, thereby controlling all of the plurality of switches to a turn-off state.

8. In paragraph 6, A plasma source, wherein the control unit sequentially selects at least one switch among the plurality of switches to perform a turn-on operation whenever plasma ignition is performed within the toroidal channel.

9. A gas discharge plate having multiple gas discharge holes formed therein; and A plasma source according to any one of claims 1 to 8, coupled to the gas discharge plate to supply an activated process gas to the gas discharge plate. Plasma source assembly.

10. A plasma source assembly according to claim 9, comprising an insulating member interposed between the gas discharge plate and the plasma source.

11. In the 9th paragraph, the gas discharge plate is formed of an insulating material, a plasma source assembly.

12. In paragraph 9, The above plasma source is, a first plasma source coupled to the gas discharge plate; and A second plasma source coupled to the gas discharge plate and disposed outside the first plasma source, Plasma source assembly.

13. A process chamber with a reaction space formed inside; A chamber lid coupled to the upper portion of the process chamber; A substrate support coupled to the lower portion of the process chamber to support the substrate within the reaction space; A plasma source assembly according to claim 9, coupled to the chamber lid; and A gas injection unit having a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support unit, the gas injection unit being positioned at a lower portion of the plasma source assembly and facing the substrate support unit. Substrate processing device.

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