Lamp configurations for UV energy activation in processing chambers, and related chamber kits and methods

Abstract

The present disclosure generally relates to lamp configurations for ultraviolet (UV) energy activation in processing chambers, and related chamber kits and methods, for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body including an inject section and an exhaust section. The processing chamber includes a transparent section, and the chamber body and the transparent section at least partially define a processing volume. The processing chamber includes a substrate support disposed in the processing volume, and a curved lamp disposed outwardly of the processing volume and operable to emit radiation toward the processing volume.

Description

LAMP CONFIGURATIONS FOR UV ENERGY ACTIVATION IN PROCESSING CHAMBERS, AND RELATED CHAMBER KITS AND METHODSBACKGROUNDField

[0001] The present disclosure generally relates to lamp configurations for ultraviolet (UV) energy activation in processing chambers, and related chamber kits and methods, for semiconductor manufacturing.Description of the Related Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing substrates includes depositing a material, such as a semiconductor material or a conductive material, on an upper surface of the substrate. For example, epitaxy is one deposition process that deposit films of various materials on a surface of a substrate in a processing chamber. During processing, various parameters can affect the uniformity of material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition operations) can be long, expensive, and inefficient, and can have limited capacity and throughput. Operations can also be limited with respect to application modularity. Moreover, hardware can involve relatively large dimensions that occupy higher footprints in manufacturing facilities. Additionally, processing can involve nonuniformities, which can involve hindered device performance and / or reduced throughput. For example, activation of gases can be limited and / or can involve non-uniform activation, which can cause limited and / or non-uniform film growth and / or dopant concentration. The activation of gases can be limited, for example, at relatively low processing temperatures for device production (such as complementary field-effect transistor (CFET) devices). Moreover, relatively higher processing temperatures can involve unintended dopant diffusion and / or hindered device performance.

[0004] Therefore, a need exists for improved apparatuses and methods in semiconductor processing.SUMMARY

[0005] The present disclosure generally relates to lamp configurations for ultraviolet (UV) energy activation in processing chambers, and related chamber kits and methods, for semiconductor manufacturing.

[0006] In one embodiment, which can be combined with other embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body including an inject section and an exhaust section. The processing chamber includes a transparent section, and the chamber body and the transparent section at least partially define a processing volume. The processing chamber includes a substrate support disposed in the processing volume, and a curved lamp disposed outwardly of the processing volume and operable to emit radiation toward the processing volume.

[0007] In one embodiment, which can be combined with other embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body including an inject section and an exhaust section. The processing chamber includes a transparent section, and the chamber body and the transparent section at least partially define a processing volume. The processing chamber includes a substrate support disposed in the processing volume, and a lamp disposed in the chamber body and operable to emit radiation toward the inject section.

[0008] In one embodiment, which can be combined with other embodiments, a chamber kit applicable for use in semiconductor manufacturing includes a curved lamp operable to emit radiation toward the processing volume. The curved lamp has an azimuthal angle between two ends, and the azimuthal angle is at least 180 degrees. The chamber kit includes a reflector comprising one or more curved surfaces.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0010] Figure 1 is a schematic side cross-sectional view of a processing chamber, according to one or more embodiments.

[0011] Figure 2 is a schematic partial top view of the curved lamp shown in Figure 1 , according to one or more embodiments.

[0012] Figure 3 is a schematic partial top view of the reflector shown in Figure 1 , according to one or more embodiments.

[0013] Figure 4 is a schematic side cross-sectional view of a processing chamber, according to one or more embodiments.

[0014] Figure 5 is a schematic partial top cross-sectional view of the processing chamber shown in Figure 4, according to one or more embodiments.

[0015] Figure 6 is a schematic partial top cross-sectional view of the processing chamber shown in Figure 4 and Figure 5, according to one or more embodiments.

[0016] Figure 7 is a schematic block diagram view of a method of substrate processing for semiconductor manufacturing, according to one or more embodiments.

[0017] Figure 8 is a schematic partial top cross-sectional view of the processing chamber shown in Figure 6, according to one or more embodiments.

[0018] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.DETAILED DESCRIPTION

[0019] The present disclosure generally relates to lamp configurations for ultraviolet (UV) energy activation in processing chambers, and related chamber kits and methods, for semiconductor manufacturing.

[0020] The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to bonding, embedding, welding, fusing, melting together, interference fitting, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to integrally forming. The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.

[0021] Figure 1 is a schematic side cross-sectional view of a processing chamber 100, according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one embodiment which can be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 creates a crossflow of precursors across a top surface 150 of the substrate 102.

[0022] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The processing chamber 100 includes one or more liners 111 , 163. The one or more liners 111 , 163, the upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body is a substrate support 106, a firstplate 108 (such as an upper plate, e.g., an upper window for example an upper dome), a second plate 110 (such as a lower plate, e.g., a lower window for example a lower dome), and one or more heat sources 141 , 143. The one or more heat sources 141 , 143 include a plurality of upper heat sources 141 and a plurality of lower heat sources 143. The one or more heat sources 141 , 143 are operable to heat the processing volume 136. In one embodiment which can be combined with other embodiments, the upper heat sources 141 include upper lamps and the lower heat sources 143 include lower lamps. The present disclosure contemplates that other heat sources may be used (in addition to or in place of the lamps) for the various heat sources described herein. For example, resistive heaters, light emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein. The first plate 108 includes a first transparent section 178 and the second plate 110 includes a second transparent section 179.

[0023] The substrate support 106 is disposed between the first plate 108 and the second plate 110. The substrate support 106 supports the substrate 102. In one embodiment which can be combined with other embodiments, the substrate support 106 includes a susceptor. Other substrate supports (including, for example, a substrate carrier and / or one or more ring segment(s) that support one or more outer regions of the substrate 102) are contemplated by the present disclosure. The plurality of upper heat sources 141 are disposed between the first plate 108 and a lid 154. The plurality of upper heat sources 141 form a portion of the upper heat source module 155.

[0024] The plurality of lower heat sources 143 are disposed between the second plate 110 and a floor 152. The plurality of lower heat sources 143 form a portion of a lower heat source module 145. The first plate 108 may be an upper dome or flat, and / or is formed of an energy transmissive material, such as quartz. The second plate 110 may be a lower dome or flat, and / or is formed of an energy transmissive material, such as quartz.

[0025] A processing volume 136 and a purge volume 138 are formed between the first plate 108 and the second plate 110. The processing volume 136 and the purge volume 138 are part of an internal volume defined at leastpartially by the first plate 108, the second plate 110, and the one or more liners 111 , 163. The one or more liners 111 , 163 are disposed inwardly of the flow module 112 and the upper body 156.

[0026] The processing volume 136 of the internal volume has the substrate support 106 disposed therein. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one embodiment which can be combined with other embodiments, the substrate support 106 is connected to the shaft 118 through one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0027] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are each sized to accommodate a lift pin 132 for lifting of the substrate 102 from the substrate support 106 before or after a deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from a process position to a transfer position. The lift pin stops 134 can include a plurality of arms 139 that attach to a shaft 135.

[0028] The flow module 112 includes one or more gas inlets 114 (e.g., a plurality of gas inlets), one or more purge gas inlets 164 (e.g., a plurality of purge gas inlets), and one or more gas exhaust outlets 116. The flow module 112 is part of an inject section 103. The inject section 103 also includes the one or more gas inlets 114. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on the opposite side from the one or more gas exhaust outlets 116.

[0029] A pre-heat ring 113 is disposed below the one or more gas inlets 114 and the one or more gas exhaust outlets 116. The pre-heat ring 113 includes a complete ring or one or more ring segments. The pre-heat ring 113 is disposed above the one or more purge gas inlets 164. The one or more liners111 , 163 are disposed on an inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition operations and / or cleaning operations. The gas inlet(s) 114 and the purge gas inlet(s) 164 are each positioned to flow a respective one or more process gases P1 and one or more purge gases P2 parallel to the top surface 150 of a substrate 102 disposed within the processing volume 136. The gas inlet(s) 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet(s) 164 are fluidly connected to one or more purge gas sources 162. The one or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using the one or more process gas sources 151 can include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases P2 supplied using the one or more purge gas sources 162 can include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using the one or more cleaning gas sources 153 can include one or more of hydrogen (H), Fluorine (F2), and / or chlorine (Cl). In one embodiment which can be combined with other embodiments, the one or more process gases P1 include silicon phosphide (SiP) and / or phospine (PH3), and the one or more cleaning gases include hydrochloric acid (HCI).

[0030] The one or more process gases P1 may include but are not limited to one or more of: hydrogen (H2), xenon (Xe?), helium (He2), argon (Ar2), bromine (Br2), chlorine (CI2), iodine (I2), krypton (Kr?), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixtures thereof (such as xenon and neon). In one embodiment which can be combined with other embodiments, the one or more process gases P1 includes one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetraclorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one embodiment which can be combined with other embodiments, the one or more process gases P1 includes one or more dopant gases, suchas germane, diborane, and / or phosphorous. Other gases are contemplated for the one or more process gases P1 .

[0031] The one or more gas exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 fluidly connects the one or more gas exhaust outlets 116 and the exhaust pump 157. The exhaust system 109 can assist in the controlled deposition of a layer on the substrate 102. The exhaust system 109 is disposed on an opposite side of the processing chamber 100 relative to the flow module 112. The one or more gas exhaust outlets 116 and the exhaust system 109 form a 104 exhaust section. In one embodiment which can be combined with other embodiments, the inject section 103 is disposed on the opposite side of the process chamber 100 from the exhaust section 104.

[0032] The processing chamber 100 includes the one or more liners 111 , 163 (e.g., a lower liner 111 and an upper liner 163). The flow module 112 (which can be at least part of a sidewall of the processing chamber 100) includes the one or more gas inlets 114 in fluid communication with the processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and a lower liner 111.

[0033] During a deposition operation (e.g., an epitaxial growth operation), the one or more process gases P1 flow through the one or more gas inlets 114, through the one or more gaps, and into the processing volume 136 to flow over the substrate 102.

[0034] The present disclosure also contemplates that the one or more purge gases P2 can be supplied to the purge volume 138 (through the one or more purge gas inlets 164) during the deposition operation, and exhausted from the purge volume 138. The one or more purge gases P2 flow simultaneously with the flowing of the one or more process gases P1. The one or more process gases P1 are exhausted through gaps between the upper liner 163 and the lower liner 111 , and through the one or more gas exhaust outlets 116. The one or more purge gases P2 can be exhausted through one or more outletopenings, and through the same one or more gas exhaust outlets 116 as the one or more process gases P1 . The present disclosure contemplates that that the one or more purge gases P2 can be separately exhausted through one or more second gas exhaust outlets that are separate from the one or more gas exhaust outlets 116.

[0035] During a cleaning operation, one or more cleaning gases flow through the one or more gas inlets 114, through the one or more gaps (between the upper liner 163 and the lower liner 111 ), and into the processing volume 136.

[0036] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure parameter(s) (e.g., temperature(s)) within the processing chamber 100. In one embodiment which can be combined with other embodiments, the one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more outer sensor devices 195, 197, 198. A controller 190 (described below) can control the one or more sensor devices 195, 196, 197, 198, and can conduct method(s) analyzing uniformity of substrate processing using at least one of the one or more sensor devices 195, 196, 197, 198. In one embodiment which can be combined with other embodiments, the one or more sensor devices 195, 196, 197, 198 each include a sensor that includes one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one embodiment which can be combined with other embodiments, the one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one embodiment which can be combined with other embodiments, each sensor device 195, 196, 197, 198 is a pyrometer and / or optical sensor, such as an optical pyrometer. The present disclosure contemplates that sensor devices other than pyrometers may be used, and / or one or more of the sensor devices 195, 196, 197, 198 can measure properties (such as metrology properties) other than temperature. In one embodiment which can be combined with other embodiments, one or more of the sensor devices 195, 196, 197, 198 can measure one or more gas parameters and / or one or more plasma parameters (such as ion density,electron temperature, electron density, ion energy and angle distribution, enthalpy, radical density, and / or absorption). In one embodiment which can be combined with other embodiments, one or more of the sensor devices 195, 196, 197, 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0037] In one embodiment which can be combined with other embodiments, the one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent the lid 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent the floor 152. The present disclosure contemplates that at least one of the one or more lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 196, 197 (such as outer sensor device 197).

[0038] Each sensor device 195, 196, 197, 198, can be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one embodiment which can be combined with other embodiments, the system including the process chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, 198. In one embodiment which can be combined with other embodiments, the process chamber 100 includes one or more additional sensor devices, in addition to the sensor devices 195, 196, 197, 198. In one embodiment which can be combined with other embodiments, the process chamber 100 may include sensor devices disposed at different locations and / or with different orientations than the illustrated sensor devices 195, 196, 197, 198.

[0039] The processing chamber 100 includes a curved lamp 170 disposed outwardly of the processing volume 136 and operable to emit radiation R1 toward the processing volume 136. The curved lamp 170 is connected to a power source 189. In one or more embodiments, a single curved lamp 170 is used in addition to the heat sources 141 and / or 143. The power source 189 is operable to flow current through the curved lamp 170 to ignite a gas in the curved lamp 170 into a plasma to emit radiation R1. The radiation R1 includesultraviolet (UV) energy, such as UV light. In one or more embodiments, the radiation R1 includes UV photons. The radiation R1 has a wavelength that is 450 nm or less, such as 400 nm or less. In one or more embodiments, the wavelength is within a range of 100 nm to 450 nm, such as within a range of 100 nm to 400 nm. In one or more embodiments, the wavelength is within a range of 160 nm to 450 nm, such as within a range of 160 nm to 380 nm. In one or more embodiments, the wavelength is about 167 nm, about 185 nm, about 254 nm, or about 365 nm. The radiation R1 has a photon energy that is at least 2.5 eV, such as within a range of 2.5 eV to 15 eV. In one or more embodiments, the photon energy is 12.0 eV or less. In one or more embodiments, the photon energy is within a range of 2.75 eV to 12.5 eV. In one or more embodiments, the photon energy is within a range of 2.75 eV to 7.75 eV. In one or more embodiments, the photon energy is within a range of 3.0 eV to 4.8 eV, such as 3.1 eV to 3.7 eV, for example within a range of 3.3 eV to 3.4 eV. In one or more embodiments, the photon energy is greater than 3.1 eV, such as within a range of 3.3 eV to 4.5 eV, for example within a range of 3.3 eV to 4.0 eV.

[0040] The processing chamber 100 includes a reflector 180 disposed outwardly of the curved lamp 170. The reflector 180 includes one or more curved surfaces 181 , 182 facing the curved lamp 170. The one or more curved surfaces 181 , 182 define an elliptical wave profile including a trough 183 and a peak 184 (e.g., in a downward direction in Figure 1 ). The peak 184 is disposed inwardly of the trough 183. The curved lamp 170 is aligned with the trough 183. The reflector 180 includes a recess 185 defining the trough 183. The curved lamp 170 is disposed between the substrate support 106 and the lid 154. The curved lamp 170 is disposed between the first transparent section 178 and the lid 154. In one embodiment which can be combined with other embodiments, the curved lamp 170 is supported by the first transparent section 178. In one embodiment which can be combined with other embodiments, the curved lamp 170 is supported by the reflector 180 and / or the lid 154 (such as suspended from the reflector 180 and / or the lid 154). The curved lamp 170 is disposed on a first side of the processing volume 136 and the lower heat sources 143 aredisposed on a second side of the processing volume 136. The second side opposes the first side.

[0041] The curved lamp 170 may be any kind of lamp known to produce a UV light, including a mercury lamp, a xenon lamp, a neon lamp, a helium lamp, as well as any other lamp that may produce a UV light. In one or more embodiments, the curved lamp 170 include bulb(s), rod(s), tube(s), electrode(s), microcavit(ies), or any other chamber that can contain a gas that can be ignited into a plasma to emit UV light.

[0042] The reflector 180 and the lamp 170 facilitate directing radiation R1 to substantially all of the upper surface of the substrate 102 for gas activation and / or surface activation, which facilitates enhanced processing (e.g., growth) rates and processing (e.g., deposition) uniformity. The reflector 180 can optionally include openings 302 (such as perforations) to allow fluid (such as air) to flow therethrough to cool the first plate 108.

[0043] The curved lamp 170 can be used in addition to the upper heat sources 141 and / or the lower heat sources 143. In one or more embodiments, the upper heat sources 141 are omitted, and the curved lamp 170 and the lower heat sources 143 are used in the processing chamber 100. The lower heat sources 143 and / or the upper heat sources 141 provide heat to the processing volume 136 (such as to the substrate support 106) while the curved lamp 170 emits the radiation R1.

[0044] As shown, a controller 190 is in communication with the processing chamber 100 and is used to control processes and methods, such as the operations of the methods described herein. The controller 190 is configured to receive data or input as sensor readings from sensor(s) (such as one or more of the sensor devices 195, 196, 197, 198). The sensor devices can include, for example: sensor devices that monitor growth of layer(s) on the substrate 102; and / or sensor devices that monitor temperatures of the substrate 102, and the heater within the pre-heat ring 113.

[0045] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuits 192 for the CPU 193. The controller 190 controls various items directly, or via other computers and / or controllers. In one embodiment which can be combined with other embodiments, the controller 190 is communicatively coupled to dedicated controllers, and the controller 190 functions as a central controller.

[0046] The controller 190 is of any form of a general-purpose computer processor that is used in an industrial setting for controlling various substrate processing chambers and equipment, and sub-processors thereon or therein. The memory 191 , or non-transitory computer readable medium, is one or more of a readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1 , DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. The support circuits 192 of the controller 190 are coupled to the CPU 193 for supporting the CPU 193. The support circuits 192 include cache, power supplies, clock circuits, input / output circuitry and subsystems, and the like. Operational parameters (e.g., a power applied to the curved lamp 170 through the power source 189, a power applied to the heat sources 141 , 143, a cleaning recipe, and / or a processing recipe) and operations are stored in the memory 191 as a software routine that is executed or invoked to turn the controller 190 into a specific purpose controller to control the operations of the various chambers / modules described herein. The controller 190 is configured to conduct any of the operations described herein. The instructions stored on the memory, when executed, cause one or more of the operations (such as the operations of the method 700) described herein to be conducted in relation to the processing chamber 100. The controller 190 and the processing chamber 100 are at least part of a system for processing substrates.

[0047] The various operations described herein can be conducted automatically using the controller 190, or can be conducted automatically or manually with certain operations conducted by a user.

[0048] The controller 190 is configured to control power to the one or more heat sources 141 , 143; power applied to the curved lamp 170 through the power source 189; the deposition; the cleaning; the rotational position; the heating; and gas flow through the processing chamber 100 by providing an output to the controls for the sensor devices 195, 196, 197, 198, the power source 189, and / or the one or more heaters, the upper heat sources 141 , the lower heat sources 143, the process gas source 151 , the purge gas source 162, the motion assembly 121 , and / or the exhaust pump 157.

[0049] Figure 2 is a schematic partial top view of the curved lamp 170 shown in Figure 1 , according to one or more embodiments.

[0050] The curved lamp 170 is in the shape of an arc (such as at least part of a circle). The curved lamp 170 has an azimuthal angle A1 between two ends. The azimuthal angle A1 is at least 180 degrees. In one or more embodiments, the azimuthal angle A1 is at least 270 degrees. The present disclosure contemplates that the curved lamp 170 can form a complete circle.

[0051] Figure 3 is a schematic partial top view of the reflector 180 shown in Figure 1 , according to one or more embodiments.

[0052] The reflector 180 includes a trough 186 and a peak 187 disposed outwardly of the trough 186 along an upper side of the reflector 180.

[0053] Figure 4 is a schematic side cross-sectional view of a processing chamber 400, according to one or more embodiments. The processing chamber 400 is similar to the processing chamber 100 shown in Figure 1 , and includes one or more aspects, features, components, properties, and / or operations thereof.

[0054] A lamp 470 is disposed in the chamber body of the processing chamber 100 and is operable to emit the radiation R1 toward the inject section 103. The lamp 470 can be disposed, for example, within the flow module 112. The lamp 470 is similar to the curved lamp 170, and includes one or more aspects, features, components, properties, and / or operations thereof. The chamber body of the processing chamber 100 includes a flow opening 401 , anda recess 402 aligned with the flow opening 401 . The recess 402 interfaces with the flow opening 401 . In one or more embodiments, the recess 402 is above or below the flow opening 401 . The recess 402 can be disposed to the left or right of the flow opening 401 . The lamp 470 is disposed in the recess 402, and the recess 402 at least partially defines one or more curved inner surfaces 403 facing the lamp 470. The one or more curved inner surfaces 403 include a reflective material having a reflectivity of at least 80% for ultraviolet (UV) light. The reflective material can include gold, silver, and / or a polished metal (such as polished aluminum and / or polished stainless steel). Other materials are contemplated for the reflective material. The flow module 112 can be formed of the reflective material or can be coated with the reflective material to define the curved inner surface(s) 403. The reflector 180 shown in Figure 1 can be formed of the reflective material or can be coated with the reflective material.

[0055] Referring again to Figure 4, the processing chamber 400 includes a flow housing 481 is disposed at least partially outward of the flow module 112 and is fluidly connected to the flow module 112 through one or more flow channels 480 disposed between the flow housing 481 and the gas inlet 114. The process gases P1 flow from the gas source 151 and through the flow housing 481 , and through the one or more flow channels 480 and into the flow opening 401 of the gas inlet 114. The one or more flow channels 480 can be formed, for example, in one or more gas boxes. The flow channels 480 can extend at least partially into the flow opening 401 . In one or more embodiments, a single lamp 470 is used in addition to the heat sources 141 and / or 143.

[0056] Figure 5 is a schematic partial top cross-sectional view of the processing chamber 400 shown in Figure 4, according to one or more embodiments.

[0057] The processing chamber 400 includes a plurality of flow housings 481 A, 481 B, 481 C. In one or more embodiments, the flow housings 481 A, 481 B, 481 C respectively include a plurality of cooling channels 571 A, 571 B, 571 C. One or more flow channels 480 respectively connect the flow housings 481 A, 481 B, 481 C to the processing volume 136.

[0058] In the implementation shown in figure 5, the lamp 470 is curved in shape, such as to form an arc. In one or more embodiments, the lamp 470 spans all of the flow channels 480 and / or all of the flow housings 481A-481 C. For example, the lamp 470 can be aligned above or below transparent portions of the flow channels 480 and / or the flow housings 481A-481 C. The lamp 470 has an azimuthal angle A2 between two ends. The azimuthal angle A2 is less than 180 degrees. In one or more embodiments, the azimuthal angle A2 is less than 150 degrees. The azimuthal angle A2 is at least 30 degrees, such as at least 45 degrees, for example at least 90 degrees. In one or more embodiments, the lamp 470 is oriented azimuthally, such as azimuthally relative to a center of the processing chamber 400.

[0059] The present disclosure contemplates that the flow channels 480 can be omitted, and the flow housings 481A-481 C can be moved to abut against the flow module 112 and / or extending at least partially into the flow opening 401 of the flow module 112.

[0060] Figure 6 is a schematic partial top cross-sectional view of the processing chamber 400 shown in Figure 4 and Figure 5, according to one or more embodiments.

[0061] In the implementation shown in Figure 6, the lamp 470 is linear in shape. In one or more embodiments, the lamp 470 spans at least one (such as one or all) of the flow channels 480 and / or at least one (such as one or all) of the flow housings 481A-481 C. For example, the lamp 470 can be aligned above or below transparent portion(s) of at least one (such as one or all) of the flow channels 480 and / or at least one (such as one or all) of the flow housings 481A-481 C. The present disclosure contemplates that the lamp 470 can be disposed outside of the flow module 112 and above or below at least one (such as one or all) of the flow housings 481A-481 C. In one or more embodiments, the lamp 470 is oriented tangentially, such as tangentially relative to a center of the processing chamber 400.

[0062] Figure 7 is a schematic block diagram view of a method 700 of substrate processing for semiconductor manufacturing, according to one or more embodiments.

[0063] The method 700 includes an operation 701 where the processing volume 136 is heated. In one embodiment which may be combined with other embodiments, the substrate 102 is heated to a target temperature of 100 degrees Celsius or higher or 600 degrees Celsius or less. In one embodiment which may be combined with other embodiments, the target temperature for the substrate 102 is within a range of 380 degrees Celsius to 600 degrees Celsius, for example 400 degrees Celsius to 500 degrees Celsius. In one embodiment which may be combined with other embodiments, the target temperature for the substrate 102 is less than 600 degrees Celsius, such as 500 degrees Celsius or less. In one embodiment which may be combined with other embodiments, the target temperature for the substrate 102 is 400 degrees Celsius or less, such as less than 200 degrees Celsius (for example about 150 degrees Celsius). The heating is accomplished at least partially by at least one of the plurality of upper heat sources 141 (Figure 1 ) and / or the plurality of lower heat sources 143. Other temperatures are contemplated.

[0064] At operation 702, process gas P1 is flowed into the processing volume 136.

[0065] Optional operation 703 includes maintaining the processing volume at a pressure. In one embodiment which may be combined with other embodiments, the pressure is maintained to be less than 60 Torr, such as within a range of 0 Torr to 30 Torr. In one embodiment which may be combined with other embodiments, the pressure is maintained to be less than 1 Torr, such as within a range of 0 Torr to 5 mTorr. Other pressures (such as 100 Torr or higher, for example) are contemplated.

[0066] At operation 704, the power source 189 flows electrical current to the curved lamp 170 or the lamp 470 to emit UV energy. The UV energy can activate the process gas P1 and / or surfaces that the process gas P1 flows past.The UV energy can heat the processing volume, in addition to or in place of the heating of operation 701 .

[0067] Figure 8 is a schematic partial top cross-sectional view of the processing chamber 400 shown in Figure 6, according to one or more embodiments.

[0068] In the implementation shown in Figure 8, the lamp 470 is linear in shape and is oriented longitudinally parallel to the flow of process gases P1. The lamp 470 can be disposed above the processing volume 136, such as above the first plate 108 shown in Figure 1 . In one or more embodiments, the lamp 470 is oriented radially, such as radially relative to a center of the processing chamber 400.

[0069] Benefits of the present disclosure include reliable gas activation; adjustability of gas activation (such as at relatively low processing temperatures); modularity in chamber application; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in an outer region of the substrate); reduced gas consumption and gas waste; increased growth rates; and more uniform film growth and / or dopant concentration. As an example, UV energy can be used to activate gases for processing. Benefits also include enhanced deposition uniformity, reduced divertive gas flow, and reduction of processing volume size.

[0070] Benefits also include enhanced device performance; reduced or eliminated occurrences of unintended dopant diffusions; efficient processing; and increased throughput. It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations and / or properties of the processing chamber 100; the controller 190; the one or more sensor devices 195, 196, 197, 198; the reflector 180; the curved lamp 170; the lamp 470 implementation shown in Figure 5; the lamp 470 implementation shown in Figure 6; the azimuthal angle A1 ; the azimuthal angle A2; the method 700; and / or the lamp 470 implementation shown in Figure 8 may be combined.

[0071] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow

Claims

WHAT IS CLAIMED IS:

1. A processing chamber applicable for use in semiconductor manufacturing, comprising: a chamber body comprising an inject section and an exhaust section; a transparent section, the chamber body and the transparent section at least partially defining a processing volume; a substrate support disposed in the processing volume; and a curved lamp disposed outwardly of the processing volume and operable to emit radiation toward the processing volume.

2. The processing chamber of claim 1 , wherein the curved lamp has an azimuthal angle between two ends, and the azimuthal angle is at least 180 degrees.

3. The processing chamber of claim 2, wherein the azimuthal angle is at least 270 degrees.

4. The processing chamber of claim 2, wherein the radiation is ultraviolet (UV) light having a wavelength within a range of 100 nm to 450 nm.

5. The processing chamber of claim 1 , further comprising a reflector disposed outwardly of the curved lamp, the reflector comprising one or more curved surfaces facing the curved lamp.

6. The processing chamber of claim 5, wherein the one or more curved surfaces define an elliptical wave profile including a trough and a peak.

7. The processing chamber of claim 6, wherein the curved lamp is aligned with the trough.

8. The processing chamber of claim 1 , wherein the curved lamp is disposed between the transparent section and a lid of the processing chamber.

9. The processing chamber of claim 1 , wherein the curved lamp is supported by the transparent section.

10. The processing chamber of claim 1 , further comprising one or more heat sources operable to heat the processing volume, wherein the curved lamp is disposed on a first side of the processing volume and the one or more heat sources are disposed on a second side of the processing volume, the second side opposing the first side.

11. A processing chamber applicable for use in semiconductor manufacturing, comprising: a chamber body comprising an inject section and an exhaust section; a transparent section, the chamber body and the transparent section at least partially defining a processing volume; a substrate support disposed in the processing volume; and a lamp disposed in the chamber body and operable to emit radiation toward the inject section.

12. The processing chamber of claim 11 , wherein the lamp is linear in shape.

13. The processing chamber of claim 11 , wherein the lamp is curved in shape and has an azimuthal angle between two ends, and the azimuthal angle is less than 180 degrees.

14. The processing chamber of claim 13, wherein the azimuthal angle is less than 150 degrees.

15. The processing chamber of claim 11 , wherein the radiation is ultraviolet (UV) light having a wavelength within a range of 100 nm to 450 nm.

16. The processing chamber of claim 11 , wherein the chamber body comprises:a flow opening; and a recess aligned with the flow opening, wherein the lamp is disposed in the recess, and the recess at least partially defines one or more curved inner surfaces facing the lamp.

17. The processing chamber of claim 16, wherein the one or more curved inner surfaces include a reflective material having a reflectivity of at least 80% for ultraviolet (UV) light.

18. A chamber kit applicable for use in semiconductor manufacturing, comprising: a curved lamp operable to emit radiation, the curved lamp having an azimuthal angle between two ends, the azimuthal angle is at least 180 degrees; and a reflector comprising one or more curved surfaces.

19. The chamber kit of claim 18, wherein the one or more curved surfaces define an elliptical wave profile including a trough and a peak, and the curved lamp is sized and shaped to align with the trough.

20. The chamber kit of claim 19, wherein the reflector further comprises a recess defining the trough.

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