Light-emitting device and preparation method therefor

Abstract

A light-emitting device and a preparation method therefor. The light-emitting device comprises a quantum dot encapsulation structure and a light-emitting assembly arranged on one side of the quantum dot encapsulation structure, wherein the quantum dot encapsulation structure comprises a first light-transmitting plate and a second light-transmitting plate which are stacked, and a quantum dot adhesive film sealed between the first light-transmitting plate and the second light-transmitting plate. The light-emitting device can effectively prevent outside water and / or oxygen from infiltrating into the quantum dot encapsulation structure, ensuring that quantum dots have good light-emitting effects.

Description

Light-emitting device and preparation method thereof

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on April 2, 2024, with application number 202410396126.9 and invention name “Light-emitting device and its preparation method”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of light-emitting devices, and in particular to a light-emitting device and a method for preparing the same. Background Art

[0003] In recent years, quantum dots have shown broad application prospects in photoluminescent devices, solid-state lighting, displays, and biomedicine, given their unique chemical and physical properties. For example, stimulating red and green quantum dots with a blue-emitting diode can produce three-color white light. Encapsulating quantum dot materials with MiniLED chips to form light-emitting devices for use in display devices offers significant advantages in both cost and image quality. Technical issues

[0004] However, the existing light-emitting devices have poor water and oxygen barrier properties, making the quantum dot materials in the light-emitting devices easily corroded by water and oxygen, which in turn leads to a decrease in the performance of the quantum dot materials, thereby reducing the luminous efficiency of the light-emitting devices. Technical Solutions

[0005] Based on this, an embodiment of the present application provides a light-emitting device and a method for manufacturing the same.

[0006] In a first aspect, an embodiment of the present application provides a light-emitting device, comprising a quantum dot packaging structure and a light-emitting component arranged on one side of the quantum dot packaging structure; the quantum dot packaging structure comprises a first light-transmitting plate and a second light-transmitting plate stacked together and a quantum dot adhesive film sealed between the first light-transmitting plate and the second light-transmitting plate.

[0007] In a second aspect, an embodiment of the present application provides a method for preparing a light-emitting device, comprising:

[0008] Providing a first light-transmitting plate, wherein one side of the first light-transmitting plate has a first groove;

[0009] Disposing a quantum dot adhesive film in the first groove of the first light-transmitting plate;

[0010] Providing a second light-transmitting plate, and connecting the second light-transmitting plate to the first light-transmitting plate so that the side of the first light-transmitting plate provided with the first groove faces the second light-transmitting plate, thereby obtaining a quantum dot encapsulation structure;

[0011] A light-emitting component is provided, and the quantum dot packaging structure and the light-emitting component are connected to obtain a light-emitting device. Beneficial effects

[0012] The light-emitting device provided in the embodiment of the present application includes a quantum dot packaging structure and a light-emitting component, wherein the light emitted by the light-emitting component can excite the quantum dot adhesive film to produce light with a wavelength different from the excitation light after entering the quantum dot packaging structure, so that the outgoing light of the light-emitting device is emitted as mixed light. The quantum dot packaging structure uses a first light-transmitting plate and a second light-transmitting plate that are sealed and connected to encapsulate the quantum dot adhesive film. The packaging effect is good and can effectively prevent external water and / or oxygen from penetrating into the interior of the quantum dot packaging structure, thereby ensuring that the quantum dots have a good luminescence effect, thereby making the light-emitting device have a higher luminescence efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for describing the embodiments.

[0014] FIG1 is a schematic diagram of the first structure of a light-emitting device provided in an embodiment of the present application.

[0015] FIG2 is a schematic diagram of a second structure of a light-emitting device provided in an embodiment of the present application.

[0016] FIG3 is a schematic diagram of a third structure of a light-emitting device provided in an embodiment of the present application.

[0017] FIG4 is a schematic diagram of a fourth structure of a light-emitting device provided in an embodiment of the present application.

[0018] FIG5 is a schematic diagram of the fifth structure of the light-emitting device provided in an embodiment of the present application.

[0019] FIG6 is a sixth structural schematic diagram of the light-emitting device provided in an embodiment of the present application.

[0020] FIG7 is a flow chart of a method for preparing a light-emitting device provided in an embodiment of the present application.

[0021] Explanation of component symbols: 100-light-emitting device; 10-quantum dot packaging structure; 11-first light-transmitting plate; 115-first groove; 12-second light-transmitting plate; 125-second groove; 13-quantum dot film; 14-first adhesive layer; 15-second adhesive layer; 20-light-emitting component; 21-bracket; 22-light source; 23-packaging glue; 24-third groove; 41-first barrier layer; 42-second barrier layer; 43-third barrier layer; 50-inorganic packaging layer. Modes for Carrying Out the Invention

[0022] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0023] Please refer to Figure 1. An embodiment of the present application provides a light-emitting device 100, including a quantum dot packaging structure 10 and a light-emitting component 20 arranged on one side of the quantum dot packaging structure 10; the quantum dot packaging structure 10 includes a first light-transmitting plate 11 and a second light-transmitting plate 12 stacked and a quantum dot adhesive film 13 sealed between the first light-transmitting plate 11 and the second light-transmitting plate 12.

[0024] Referring to FIG. 1 , a first groove 115 is defined on a side of the first light-transmitting plate 11 facing the second light-transmitting plate 12 , and the quantum dot adhesive film 13 is disposed in the first groove 115 .

[0025] Illustratively, the thickness of the first light-transmitting plate 11 is 300 μm to 700 μm, for example, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 300 μm, etc.

[0026] Illustratively, the thickness of the second light-transmitting plate 12 is 200 μm to 400 μm, for example, 200 μm, 230 μm, 250 μm, 280 μm, 300 μm, 330 μm, 350 μm, 380 μm, 400 μm, etc.

[0027] Exemplarily, the depth of the first groove 115 is 100 μm to 300 μm, for example, 100 μm, 130 μm, 150 μm, 180 μm, 200 μm, 230 μm, 250 μm, 280 μm, 300 μm, etc.

[0028] For example, the first light-transmitting plate 11 and the second light-transmitting plate 12 are both glass substrates. Since glass substrates have good light transmittance and water and oxygen barrier properties, the quantum dot encapsulation structure 10 can achieve good water and oxygen barrier properties.

[0029] Illustratively, the material of the glass substrate includes at least one of aluminosilicate glass, alkali aluminosilicate glass, borosilicate glass, alkali borosilicate glass, aluminoborosilicate glass and alkali aluminoborosilicate glass.

[0030] Exemplarily, the first light-transmitting plate 11 and the second light-transmitting plate 12 are made of the same material. Exemplarily, the first light-transmitting plate 11 and the second light-transmitting plate 12 have the same thermal expansion coefficient.

[0031] Exemplarily, the transmittance of the first light-transmitting plate 11 and the second light-transmitting plate 12 to visible light is greater than or equal to 85%, for example, 85%, 88%, 90%, 93%, 95%, 98%, 100%, etc.

[0032] For example, the first groove 115 can be manufactured by CNC machining, or by using a mask and wet etching, or a glass substrate having the shape of the first groove 115 can be directly manufactured using a mold during the glass forming process.

[0033] For example, the bottom of the first groove 115 may be a plane, and the wall of the first groove 115 may be a plane.

[0034] Exemplarily, the cross-section of the first groove 115 can be circular, rectangular, square, etc. It can be understood that the cross-section refers to the cross-section obtained by cutting the first groove 115 in a plane parallel to the plane where the bottom of the first groove 115 is located.

[0035] Referring to FIG. 2 , the outer surface of the quantum dot film 13 is covered with a first barrier layer 41. By covering the outer surface of the quantum dot film 13 with the first barrier layer 41, the reliability of the quantum dot packaging structure 10 can be improved due to the first barrier layer 41 having good water and oxygen barrier properties, thereby preventing the problem of insufficient airtightness caused by poor welding of the first light-transmitting plate 11 and the second light-transmitting plate 12.

[0036] Referring to FIG. 2 , the first barrier layer 41 may cover the quantum dot film 13 and a side of the first light-transmitting plate 11 facing the second light-transmitting plate 12 .

[0037] Illustratively, the material of the first barrier layer 41 includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin.

[0038] Illustratively, the thickness of the first barrier layer 41 is 5 μm to 10 μm, for example, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, etc.

[0039] Referring to FIG. 3 , in some embodiments, the bottom and walls of the first groove 115 are covered with a second barrier layer 42, and the quantum dot adhesive film 13 is disposed on the second barrier layer 42. Exemplarily, the material of the second barrier layer 42 includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin. Exemplarily, the thickness of the second barrier layer 42 is 5 μm to 20 μm, for example, 5 μm, 8 μm, 10 μm, 13 μm, 15 μm, 18 μm, 20 μm, etc.

[0040] It can be understood that by setting the second barrier layer 42 on the bottom and wall of the first groove 115, the second barrier layer 42 has better water and oxygen barrier performance, which can further improve the packaging effect of the quantum dot packaging structure 10, thereby improving the service life of the quantum dot adhesive film 13.

[0041] The light-emitting device 100 provided in the embodiment of the present application includes a quantum dot packaging structure 10 and a light-emitting component 20, wherein the light emitted by the light-emitting component 20 can excite the quantum dot glue film 13 to produce light with a wavelength different from the excitation light after entering the quantum dot packaging structure 10, so that the outgoing light of the light-emitting device 100 is emitted as mixed light. The quantum dot packaging structure 10 uses a first light-transmitting plate 11 and a second light-transmitting plate 12 that are sealed and connected to encapsulate the quantum dot glue film 13. The packaging effect is good and can effectively prevent external water and / or oxygen from penetrating into the interior of the quantum dot packaging structure 10, thereby ensuring that the quantum dots have a good luminescence effect, thereby making the light-emitting device 100 have a higher luminescence efficiency.

[0042] It can be understood that when the quantum dot packaging structure 10 has better water and oxygen barrier properties, the requirements for the water and oxygen resistance of the quantum dot material itself in the quantum dot film 13 can be reduced, so that the quantum dot packaging structure 10 can use quantum dot materials with lower water and oxygen resistance but higher fluorescence efficiency, thereby improving the luminous efficiency of the light-emitting device 100 and reducing the power of the light-emitting device 100.

[0043] Referring to Figures 1 to 3 , the light-emitting component 20 is disposed on the side of the first light-transmitting plate 11 facing away from the second light-transmitting plate 12 . It is understood that the quantum dot adhesive film 13 is disposed within the first groove 115 on the first light-transmitting plate 11 . That is, when the light-emitting component 20 is disposed on the side of the first light-transmitting plate 11 of the quantum dot packaging structure 10 , the distance between the quantum dot adhesive film 13 in the quantum dot packaging structure 10 and the light-emitting component 20 can be kept as short as possible, thereby shortening the transmission distance of light emitted by the light-emitting component 20 before entering the quantum dot adhesive film 13 , thereby reducing light loss and improving light utilization.

[0044] Referring to FIG. 4 , a second groove 125 may be further provided on a side of the second light-transmitting plate 12 facing the first light-transmitting plate 11 , and the first groove 115 corresponds to the second groove 125 .

[0045] It should be noted that the reason why the second groove 125 is set on the second light-transmitting plate 12 in the embodiment of the present application is that the quantum dot glue film 13 is usually prepared by dispensing. During the dispensing process, the upper surface of the glue may be a convex surface after the glue is cured, and the height of the glue may be higher than the depth of the first groove 115. In addition, when the light-emitting device 100 is working, the heat generated by the light-emitting component 20 may be transmitted to the quantum dot glue film 13 in the quantum dot packaging structure 10. The quantum dot glue film 13 may expand to a certain extent after being heated. Providing the second groove 125 on the second light-transmitting plate 12 can reserve a certain amount of accommodation space and thermal expansion space for the glue, thereby preventing the connection position of the first light-transmitting plate 11 and the second light-transmitting plate 12 from being stretched due to the expansion of the glue, thereby reducing the airtightness of the quantum dot packaging structure 10.

[0046] For example, the second groove 125 can be prepared by CNC machining (computer numerically controlled precision machining), or by using a mask and wet etching, or by directly preparing a glass substrate having the shape of the second groove 125 using a mold during the glass forming process.

[0047] For example, the bottom of the second groove 125 may be a plane, and the wall of the second groove 125 may be a plane.

[0048] Exemplarily, the cross-section of the second groove 125 can be circular, rectangular, square, etc. It can be understood that the cross-section refers to the cross-section obtained by cutting the first groove 115 in a plane parallel to the plane where the bottom of the first groove 115 is located.

[0049] Exemplarily, the orthographic projection of the second groove 125 on the first light-transmitting plate 11 completely overlaps with the first groove 115 .

[0050] Exemplarily, the depth of the second groove 125 is smaller than the depth of the first groove 115 .

[0051] It can be understood that since the first groove 115 is the main structure for accommodating the quantum dot glue film 13, and the main function of the second groove 125 is to reserve a certain thermal expansion space for the glue, the second groove 125 can be set to a smaller depth to meet the needs. Moreover, when the depth of the second groove 125 is relatively small, the thickness of the second light-transmitting plate 12 can also be thinned, thereby reducing the overall thickness of the light-emitting device 100, which is conducive to achieving the lightweight display device using the light-emitting device 100. In addition, when the thickness of the second light-transmitting plate 12 is constant, reducing the depth of the second groove 125 can also improve the mechanical strength of the second light-transmitting plate 12, thereby improving the structural stability of the quantum dot packaging structure 10.

[0052] Exemplarily, the depth of the second groove 125 is 100 μm to 200 μm, for example, 100 μm, 130 μm, 150 μm, 180 μm, 200 μm, etc.

[0053] Referring to FIG. 5 , in some embodiments, the bottom and walls of the second groove 125 are covered with a third barrier layer 43, and the quantum dot adhesive film 13 is disposed on the third barrier layer 43. Exemplarily, the material of the third barrier layer 43 includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin. Exemplarily, the thickness of the third barrier layer 43 is 5 μm to 20 μm, for example, 5 μm, 8 μm, 10 μm, 13 μm, 15 μm, 18 μm, or 20 μm.

[0054] It can be understood that by setting the third barrier layer 43 on the bottom and wall of the second groove 125, the third barrier layer 43 has better water and oxygen barrier performance, which can further improve the packaging effect of the quantum dot packaging structure 10, thereby improving the service life of the quantum dot adhesive film 13.

[0055] For example, the light emitting device 100 according to the embodiment of the present application may include two or more of the first barrier layer 41 , the second barrier layer 42 and the third barrier layer 43 at the same time.

[0056] Referring to FIG. 1 to FIG. 5 , the second light-transmitting plate 12 and the first light-transmitting plate 11 are connected via a first adhesive layer 14 . The first adhesive layer 14 is disposed around the first groove 115 .

[0057] Illustratively, the thickness of the first adhesive layer 14 is 5 μm to 15 μm, for example, 5 μm, 8 μm, 10 μm, 13 μm, 15 μm, etc.

[0058] Exemplarily, the width of the first adhesive layer 14 is 3 μm to 10 μm, for example, 3 μm, 5 μm, 8 μm, 10 μm, etc.

[0059] Exemplarily, the material of the first adhesive layer 14 is Frit Seal.

[0060] Exemplarily, in parts by weight, the glass glue includes 20 to 80 parts of glass powder, 5 to 40 parts of filler and 10 to 40 parts of adhesive, wherein the glass powder may include at least one of vanadium pentoxide (V2O5), phosphorus pentoxide (P2O5), iron oxide (Fe2O3), tellurium dioxide (TeO2), barium oxide (BaO), silicon dioxide (SiO2), boron trioxide (B2O3), lead oxide (PbO) and tin oxide (SnO), the filler may be ceramic powder, and the adhesive may be diethylene glycol monobutyl ether.

[0061] Exemplarily, the quantum dot adhesive film 13 includes a quantum dot material and a resin material, and the mass ratio of the quantum dot material to the resin material is (4-7):100, such as 4:100, 5:100, 6:100, 7:100, etc.

[0062] Exemplarily, the quantum dot adhesive film 13 further includes diffusion particles, and the mass ratio of the diffusion particles to the resin material is (3-15):100, for example, 3:100, 5:100, 8:100, 10:100, 13:100, 15:100, etc.

[0063] It is understandable that by adding diffusion particles into the quantum dot film 13 , the uniformity of light emission from the quantum dot film 13 can be improved, thereby improving the uniformity of light emission from the light emitting device 100 .

[0064] Illustratively, the particle size of the diffusion particles is 1 nm to 50 nm, for example, 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, etc.

[0065] Exemplarily, the material of the diffusion particles includes at least one of titanium dioxide and silicon dioxide.

[0066] Illustratively, the resin material may include at least one of an acrylate resin, an organosiloxane resin, an acrylic modified polyurethane, an acrylate modified silicone resin, and an epoxy resin.

[0067] Exemplarily, the quantum dot encapsulation structure 10 and the light-emitting component 20 are connected via a second adhesive layer 15 .

[0068] Exemplarily, the second adhesive layer 15 may be optical adhesive.

[0069] 1 to 5 , the light emitting assembly 20 may include a bracket 21 , a light source 22 and a packaging adhesive 23 . The bracket 21 is provided with a third groove 24 , the light source 22 is disposed at the bottom of the third groove 24 , and the third groove 24 is further provided with a packaging adhesive 23 covering the light source 22 .

[0070] Exemplarily, the light source 22 may be an LED chip, such as a Mini LED (sub-millimeter light emitting diode).

[0071] Exemplarily, the packaging adhesive 23 may be an optical adhesive with good light transmittance.

[0072] Exemplarily, the material of the bracket 21 includes one or more of polyphthalamide, polyterephthalic acid, 1,4-cyclohexanedimethanol, epoxy resin, ceramic, and sheet molding compound (SMC).

[0073] Referring to FIG6 , an inorganic encapsulation layer 50 may be further provided on the outer surface of the light source 22, and the inorganic encapsulation layer 50 is disposed between the light source 22 and the encapsulant 23. It is understood that the inorganic encapsulation layer 50 has a better water and oxygen barrier performance than the organic encapsulant 23, thereby further improving the encapsulation effect of the light source 22 and thereby extending the service life of the light source 22.

[0074] For example, the material of the inorganic encapsulation layer 50 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.

[0075] Illustratively, the thickness of the inorganic encapsulation layer 50 is 5 μm to 50 μm, for example, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, etc.

[0076] Referring to FIG. 7 , in combination with FIG. 1 to FIG. 6 , an embodiment of the present application further provides a method for preparing a light-emitting device, which is used to prepare the light-emitting device 100 in any of the above embodiments. The method includes:

[0077] S100 , providing a first light-transmitting plate 11 , wherein one side of the first light-transmitting plate 11 has a first groove 115 .

[0078] Exemplarily, the first light-transmitting plate 11 is a glass substrate.

[0079] For example, a CNC machining (computer numerically controlled precision machining) method can be used, or a mask and wet etching can be used to form the first groove 115 on one side of the first light-transmitting plate 11, or a glass substrate having the shape of the second groove 125 can be directly prepared using a mold during the glass forming process.

[0080] For example, a second barrier layer 42 may be provided on the bottom and the wall of the first groove 115. For example, the second barrier layer 42 may be prepared by evaporation or sputtering.

[0081] S200 , disposing a quantum dot adhesive film 13 in the first groove 115 of the first light-transmitting plate 11 .

[0082] Exemplarily, the step of disposing the quantum dot adhesive film 13 in the first groove 115 of the first light-transmitting plate 11 includes:

[0083] Providing raw materials, the raw materials including a quantum dot dispersion solution and a resin material, and mixing the components in the raw materials to obtain a quantum dot colloid;

[0084] The quantum dot colloid is placed in the first groove 115 of the first light-transmitting plate 11 , and the quantum dot colloid is cured to obtain the quantum dot adhesive film 13 .

[0085] For example, the quantum dot colloid may be placed in the first groove 115 of the first light-transmitting plate 11 by inkjet printing, coating, or other methods.

[0086] Exemplarily, the quantum dot dispersion solution includes quantum dot material and a solvent, and the concentration of the quantum dot material in the quantum dot dispersion solution is 50 mg / ml to 200 mg / ml, for example, 50 mg / ml, 80 mg / ml, 100 mg / ml, 130 mg / ml, 150 mg / ml, 180 mg / ml, 200 mg / ml, etc.

[0087] Illustratively, the solvent may include at least one of n-hexane, anhydrous ethanol, and chloroform.

[0088] Illustratively, the mass ratio of the quantum dot material to the resin material in the quantum dot dispersion solution is (4-7):100, such as 4:100, 5:100, 6:100, 7:100, and the like.

[0089] Exemplarily, the raw material further includes diffusion particles, and the mass ratio of the diffusion particles to the resin material is (3-15):100, for example, 1:100, 3:100, 5:100, 8:100, 10:100, etc.

[0090] Illustratively, the particle size of the diffusion particles is 1 nm to 50 nm, for example, 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, etc.

[0091] Exemplarily, the material of the diffusion particles includes at least one of titanium dioxide and silicon dioxide.

[0092] For example, after the quantum dot film 13 is disposed in the first groove 115 of the first light-transmitting plate 11, a first barrier layer 41 may be disposed on the outer surface of the quantum dot film 13. For example, the first barrier layer 41 may be prepared by evaporation or sputtering.

[0093] S300 , providing a second light-transmitting plate 12 , connecting the second light-transmitting plate 12 to the first light-transmitting plate 11 so that the side of the first light-transmitting plate 11 provided with the first groove 115 faces the second light-transmitting plate 12 , to obtain a quantum dot packaging structure 10 .

[0094] Exemplarily, the connecting the second light-transmitting plate 12 and the first light-transmitting plate 11 includes:

[0095] Disposing glass glue on the first light-transmitting plate 11 and / or the second light-transmitting plate 12 in an area corresponding to the periphery of the first groove 115;

[0096] The glass glue is irradiated with laser light to melt the glass glue, and the first light-transmitting plate 11 and the second light-transmitting plate 12 are connected by the bonding action of the melted glass glue.

[0097] S400 , providing a light-emitting component 20 , connecting the quantum dot packaging structure 10 and the light-emitting component 20 to obtain a light-emitting device 100 .

[0098] For example, a second adhesive layer 15 may be used to connect the quantum dot packaging structure 10 and the light-emitting component 20 . The second adhesive layer 15 may be an optical adhesive.

[0099] The above describes in detail the light-emitting devices and their preparation methods provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is intended only to facilitate understanding of the present application. Furthermore, those skilled in the art will appreciate that variations in the specific implementation methods and scope of application may occur based on the concepts of the present application. In summary, the contents of this specification should not be construed as limiting the present application.

Claims

1. A light-emitting device comprising a quantum dot packaging structure and a light-emitting component arranged on one side of the quantum dot packaging structure; the quantum dot packaging structure comprises a first light-transmitting plate and a second light-transmitting plate stacked together, and a quantum dot adhesive film sealed between the first light-transmitting plate and the second light-transmitting plate.

2. The light emitting device according to claim 1, wherein A first groove is provided on a side of the first light-transmitting plate facing the second light-transmitting plate, and the quantum dot adhesive film is provided in the first groove.

3. The light emitting device according to claim 2, wherein A second groove is provided on a side of the second light-transmitting plate facing the first light-transmitting plate, and the first groove corresponds to the second groove; and / or The outer surface of the quantum dot adhesive film is covered with a first barrier layer. The light emitting device according to claim 3 , wherein: The depth of the second groove is smaller than the depth of the first groove; and / or The depth of the first groove is 100 μm to 300 μm; and / or The depth of the second groove is 100 μm to 200 μm; and / or The thickness of the first barrier layer is 5 μm to 10 μm; and / or The material of the first barrier layer includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin. The light emitting device according to claim 3 , wherein: The bottom and the wall of the first groove are covered with a second barrier layer, and the quantum dot adhesive film is arranged on the second barrier layer; and / or The bottom and the wall of the second groove are covered with a third barrier layer, and the quantum dot adhesive film is arranged on the third barrier layer. The light emitting device according to claim 5 , wherein: The thickness of the second barrier layer is 5 μm to 20 μm; and / or The thickness of the third barrier layer is 5 μm to 20 μm; and / or The material of the second barrier layer includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin; and / or The material of the third barrier layer includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin.

7. The light emitting device according to claim 1, wherein The quantum dot adhesive film includes a quantum dot material and a resin material, and the mass ratio of the quantum dot material to the resin material is (4-7):

100. The light emitting device according to claim 7 , wherein: The quantum dot film further includes diffusion particles, and the mass ratio of the diffusion particles to the resin material is (3-15):

100.

9. The light emitting device according to claim 8, wherein The particle size of the diffusion particles is 1 nm to 50 nm; and / or The material of the diffusion particles includes at least one of titanium dioxide and silicon dioxide.

10. The light emitting device according to claim 2, wherein The second light-transmitting plate and the first light-transmitting plate are connected via a first adhesive layer, and the first adhesive layer is disposed around the first groove; and / or The quantum dot packaging structure and the light-emitting component are connected via a second adhesive layer.

11. The light emitting device according to any one of claims 1 to 10, wherein: The light-emitting component is arranged on a side of the first light-transmitting plate away from the second light-transmitting plate; and / or The light emitting component includes a bracket, a light source and a packaging glue. The bracket is provided with a third groove. The light source is arranged at the bottom of the third groove. The third groove is also provided with a packaging glue covering the light source.

12. The light emitting device according to claim 11, wherein An inorganic packaging layer is further provided on the outer surface of the light source, and the inorganic packaging layer is arranged between the light source and the packaging glue.

13. The light emitting device according to claim 12, wherein: The material of the inorganic encapsulation layer includes at least one of silicon oxide, silicon nitride, silicon oxynitride and aluminum oxide; and / or The thickness of the inorganic encapsulation layer is 5 μm to 50 μm.

14. A method for preparing a light-emitting device, comprising: Providing a first light-transmitting plate, wherein one side of the first light-transmitting plate has a first groove; Disposing a quantum dot adhesive film in the first groove of the first light-transmitting plate; Providing a second light-transmitting plate, and connecting the second light-transmitting plate to the first light-transmitting plate so that the side of the first light-transmitting plate provided with the first groove faces the second light-transmitting plate, thereby obtaining a quantum dot encapsulation structure; A light-emitting component is provided, and the quantum dot packaging structure and the light-emitting component are connected to obtain a light-emitting device.

15. The method for preparing a light-emitting device according to claim 14, wherein: The step of providing a quantum dot adhesive film in the first groove of the first light-transmitting plate includes: Providing a quantum dot dispersion solution and a resin material, and mixing the quantum dot dispersion solution and the resin material to obtain a quantum dot colloid; The quantum dot colloid is disposed in the first groove of the first light-transmitting plate, and the quantum dot colloid is cured to obtain the quantum dot adhesive film.

16. The method for preparing a light-emitting device according to claim 15, wherein: The quantum dot dispersion solution comprises a quantum dot material and a solvent, and the concentration of the quantum dot material in the quantum dot dispersion solution is 50 mg / ml to 200 mg / ml; and / or The mass ratio of the quantum dot material in the quantum dot dispersion solution to the resin material is (4-7):

100.

17. The method for preparing a light-emitting device according to claim 14, wherein: A first groove is provided on a side of the first light-transmitting plate facing the second light-transmitting plate, and the quantum dot adhesive film is provided in the first groove.

18. The method for preparing a light-emitting device according to claim 17, wherein: A second groove is provided on a side of the second light-transmitting plate facing the first light-transmitting plate, and the first groove corresponds to the second groove; and / or The outer surface of the quantum dot adhesive film is covered with a first barrier layer.

19. The method for preparing a light-emitting device according to claim 18, wherein: The depth of the second groove is smaller than the depth of the first groove; and / or The depth of the first groove is 100 μm to 300 μm; and / or The depth of the second groove is 100 μm to 200 μm; and / or The thickness of the first barrier layer is 5 μm to 10 μm; and / or The material of the first barrier layer includes one or more of aluminum nitride, aluminum nitride, silicon nitride, aluminum oxide, aluminum, silver, lead, and tin.

20. The method for preparing a light-emitting device according to claim 19, wherein: The bottom and the wall of the first groove are covered with a second barrier layer, and the quantum dot adhesive film is arranged on the second barrier layer; and / or The bottom and the wall of the second groove are covered with a third barrier layer, and the quantum dot adhesive film is arranged on the third barrier layer.

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