Photoelectric device assembly, rear-view mirror, and manufacturing method

Abstract

A photoelectric device assembly, a rear-view mirror, and a manufacturing method. The photoelectric device assembly comprises a photoelectric device (102) and a supporting plate (101); a masking layer (1031) located in a non-visible region is arranged on the supporting plate (101); the masking layer (1031) is provided with a light transmitting region (A11); and the light transmittance of the light transmitting region (A11) of the masking layer (1031) is greater than that of other regions (A12) of the masking layer.

Description

An optoelectronic device assembly, a rearview mirror and a manufacturing method

[0001] This application is based on and claims priority to Chinese patent application No. 202410444185.9, filed on April 12, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the field of optoelectronic technology, and in particular to an optoelectronic device assembly, a rearview mirror and a manufacturing method. BACKGROUND

[0003] Traditional automobile rearview mirrors not only have single function, but also have serious rear road visibility limitation, so in recent years, dual-mode streaming media rearview mirrors have gradually been favored by people. Simply speaking, the dual-mode streaming media rearview mirror has a mirror mode and a display mode. In the mirror mode, some high-end rearview mirror products also have an automatic anti-glare function; in the display mode, the rearview mirror can capture the road condition information behind the vehicle through the rear pull camera installed outside the tail of the vehicle, and transmit the information to the display screen in the rearview mirror in real time, so that the driver and passenger can know the road condition behind the vehicle by watching the display screen. Compared with the traditional rearview mirror, the streaming media rearview mirror has a wider field of view, and also has better effect in rainy and foggy weather.

[0004] In the existing rearview mirror products with automatic anti-glare function, the photosensitive device and other sensors for detecting ambient light are usually arranged at a position protruding outside the frame of the rearview mirror, which is visually conspicuous, and there is an urgent need to propose a product scheme that can detect external ambient light and visually hide the sensors and other devices. SUMMARY

[0005] To solve the above problems, the present application provides an optoelectronic device assembly, a rearview mirror and a manufacturing method, which can detect external ambient light and visually hide the sensors and other devices.

[0006] To achieve the above-mentioned purpose, the present application provides an optoelectronic device assembly, comprising: an optoelectronic device and a support plate, a shielding layer located in a non-visible area is arranged on the support plate, the shielding layer is provided with a light-transmitting area, and the light-transmitting rate of the light-transmitting area of the shielding layer is greater than that of other areas of the shielding layer.

[0007] Preferably, the shielding layer is located at the edge area of the support plate.

[0008] Preferably, the support plate is a cover plate.

[0009] Preferably, the optoelectronic device comprises at least one substrate, and one of the at least one substrate serves as the support plate.

[0010] Preferably, the size of the support plate is substantially consistent with the size of the optoelectronic device.

[0011] Preferably, at least part of the edge of the support plate protrudes outward from the optoelectronic device, forming a protruding area, and the light-transmitting area of the shielding layer is located in the protruding area.

[0012] Preferably, at least part of the light-shielding material layer of the shielding layer in the protruding area is made by a printing process.

[0013] Preferably, the light-transmitting area of the shielding layer has a light-transmitting rate greater than that of other areas of the shielding layer, which is specifically implemented as follows: the light-transmitting rate of the material used in the light-transmitting area of the shielding layer is greater than that of the material used in other areas.

[0014] Preferably, the light-transmitting area of the shielding layer has a light-transmitting rate greater than that of other areas of the shielding layer, which is specifically implemented as follows: the light-transmitting rate of the material used in the light-transmitting area of the shielding layer is greater than that of the material used in other areas.

[0015] Preferably, the light-transmitting area of the shielding layer has a light-transmitting rate greater than that of other areas of the shielding layer, which is specifically implemented as follows: the light-transmitting rate of the material used in the light-transmitting area of the shielding layer is greater than that of the material used in other areas.

[0016] Preferably, the light-transmitting area of the shielding layer has a light-transmitting rate greater than that of other areas of the shielding layer, which is specifically implemented as follows: the light-transmitting rate of the material used in the light-transmitting area of the shielding layer is greater than that of the material used in other areas.

[0017] Preferably, the light-transmitting area of the shielding layer has a light-transmitting rate greater than that of other areas of the shielding layer, which is specifically implemented as follows: the light-transmitting rate of the material used in the light-transmitting area of the shielding layer is greater than that of the material used in other areas.

[0018] Preferably, the light-transmitting area of the shielding layer has a light-transmitting rate greater than that of other areas of the shielding layer, which is specifically implemented as follows: the light-transmitting rate of the material used in the light-transmitting area of the shielding layer is greater than that of the material used in other areas.

[0019] Preferably, the shielding layer includes at least one light-shielding material layer, and the light-shielding material layer includes a light-reflecting layer and / or a light-absorbing layer.

[0020] Preferably, the light-absorbing layer is an ink layer.

[0021] Preferably, the ink layer is made by a printing process.

[0022] Preferably, the light-reflecting layer is a partially reflective and partially transmitting layer.

[0023] Preferably, the light-reflecting layer is made by a coating or printing process.

[0024] Preferably, the light-absorbing layer is located on the side of the light-reflecting layer away from the external incident light.

[0025] Preferably, the shielding layer is located on a side of the support plate facing the optoelectronic device.

[0026] Preferably, the shielding layer comprises a plurality of layers of light shielding material, wherein at least one layer of light shielding material is located on both sides of the support plate with respect to other layers of light shielding material.

[0027] Preferably, the optoelectronic device comprises a light modulation module with adjustable optical properties.

[0028] Preferably, the optical properties comprise transmission, reflection, diffraction, scattering, and / or absorption.

[0029] Preferably, the light modulation module comprises a mirror module with adjustable reflectivity.

[0030] Preferably, the light modulation module further comprises a display module located on a side of the mirror module facing away from the support plate.

[0031] Preferably, the cover plate and the optoelectronic device are combined together by full lamination or frame lamination.

[0032] Preferably, further comprising a photosensitive sensor receiving light transmitted through the light-transmissive region of the shielding layer.

[0033] Preferably, a protective layer is provided on the support plate, the protective layer being located on a side of the support plate facing away from the optoelectronic device.

[0034] Another aspect of the present application provides a rearview mirror comprising the optoelectronic device assembly as described above, the optoelectronic device comprising a mirror module with adjustable reflectivity.

[0035] Preferably, the light transmittance of the mirror module is also adjustable.

[0036] Preferably, the optoelectronic device further comprises a display module located on a side of the mirror module facing away from the support plate.

[0037] Preferably, the support plate is a cover plate, and the cover plate and the optoelectronic device are combined together by full lamination or frame lamination.

[0038] Preferably, further comprising any one or any combination of a touch layer, a light sensor, a control unit, a camera module, a conversion line, a housing, and a support.

[0039] Preferably, the mirror module comprises a liquid crystal light modulation layer.

[0040] Preferably, the liquid crystal light modulation layer adopts a TN-type or VA-type liquid crystal cell structure.

[0041] Preferably, the mirror module further comprises an absorbing polarizer and a reflecting polarizer on both sides of the liquid crystal dimming layer, wherein the absorbing polarizer is located on the side of the liquid crystal cell structure facing the incident light from the external environment.

[0042] Preferably, the absorbing axis of the absorbing polarizer is parallel or perpendicular to the reflecting axis of the reflecting polarizer.

[0043] In another aspect, the application provides a method for manufacturing an optoelectronic device assembly, comprising:

[0044] A support plate is provided, and a shielding layer located in a non-visible region is arranged on the support plate, the shielding layer being provided with a light-transmitting region, the light-transmitting region of the shielding layer having a light-transmitting rate greater than that of other regions of the shielding layer.

[0045] The support plate is combined with the optoelectronic device.

[0046] Preferably, the shielding layer is formed by a coating process and / or a printing process.

[0047] Preferably, the support plate is a cover plate, and the combination of the support plate and the optoelectronic device is specifically implemented by assembling the cover plate and the optoelectronic device together.

[0048] Preferably, at least part of the light-shielding material layer in the shielding layer is made by a printing process.

[0049] Preferably, the optoelectronic device comprises at least one substrate, one of the at least one substrate serving as the support plate, and the combination of the support plate and the optoelectronic device is specifically implemented by manufacturing the optoelectronic device with the support plate as one of the substrates of the optoelectronic device.

[0050] Preferably, the support plate is a cover plate, and the combination of the support plate and the optoelectronic device is specifically implemented by combining the cover plate and the optoelectronic device together by full lamination or frame lamination.

[0051] Preferably, at least part of the edges of the support plate protrude outward from the optoelectronic device to form a protruding region, and the light-transmitting region of the shielding layer is located in the protruding region.

[0052] Preferably, at least part of the light-shielding material layer in the shielding layer of the support plate located in the protruding region is made by a printing process.

[0053] It is to be understood that both the foregoing general description of the application and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the application claimed. BRIEF DESCRIPTION OF DRAWINGS

[0054] Fig. 1 is a front view of an optoelectronic device assembly according to a first embodiment of the application;

[0055] Fig. 2 is a cross-sectional view of the optoelectronic device assembly of Fig. 1 along the line A-A;

[0056] Fig. 3 is a cross-sectional view of the optoelectronic device assembly of Fig. 1 along the line B-B;

[0057] Fig. 4 is a perspective view of the optoelectronic device assembly of the first embodiment of the present application from a back side;

[0058] Fig. 5 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of the first embodiment of the present application from a back side;

[0059] Figs. 6 to 10 are schematic views of the optoelectronic device assembly of the first embodiment of the present application at various stages of a manufacturing process;

[0060] Fig. 11 is a front view of the optoelectronic device assembly of the second embodiment of the present application;

[0061] Fig. 12 is a cross-sectional view of the optoelectronic device assembly of Fig. 11 along the line A-A;

[0062] Fig. 13 is a cross-sectional view of the optoelectronic device assembly of Fig. 11 along the line B-B;

[0063] Fig. 14 is a perspective view of the optoelectronic device assembly of the second embodiment of the present application from a back side;

[0064] Fig. 15 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of the second embodiment of the present application from a back side;

[0065] Fig. 16 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of the second embodiment of the present application from a front side;

[0066] Fig. 17 is a front view of the optoelectronic device assembly of the third embodiment of the present application;

[0067] Fig. 18 is a cross-sectional view of the optoelectronic device assembly of Fig. 17 along the line A-A;

[0068] Fig. 19 is a cross-sectional view of the optoelectronic device assembly of Fig. 17 along the line B-B;

[0069] Fig. 20 is a perspective view of the optoelectronic device assembly of the third embodiment of the present application from a back side;

[0070] Fig. 21 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of the third embodiment of the present application from a back side;

[0071] Fig. 22 is a front view of the optoelectronic device assembly of the fourth embodiment of the present application;

[0072] Fig. 23 is a cross-sectional view of the optoelectronic device assembly of Fig. 22 along the line A-A;

[0073] Fig. 24 is a B-B sectional view of the photoelectric device assembly of Fig. 22;

[0074] Fig. 25 is a perspective view of the photoelectric device assembly of the fourth embodiment of the present application, viewed in the back direction;

[0075] Fig. 26 is a perspective view of the cover plate and the shielding layer in the photoelectric device assembly of the fourth embodiment of the present application, viewed in the back direction;

[0076] Fig. 27 is a perspective view of the photoelectric device assembly of the fifth embodiment of the present application, viewed in the back direction;

[0077] Fig. 28 is a perspective view of the cover plate and the shielding layer in the photoelectric device assembly of the fifth embodiment of the present application, viewed in the back direction;

[0078] Fig. 29 is a front view of the photoelectric device assembly of the sixth embodiment of the present application;

[0079] Fig. 30 is an A-A sectional view of the photoelectric device assembly of Fig. 29;

[0080] Fig. 31 is a B-B sectional view of the photoelectric device assembly of Fig. 29;

[0081] Fig. 32 is a perspective view of the photoelectric device assembly of the sixth embodiment of the present application, viewed in the back direction;

[0082] Fig. 33 is a perspective view of the cover plate and the shielding layer in the photoelectric device assembly of the sixth embodiment of the present application, viewed in the back direction;

[0083] Fig. 34 is a front view of the photoelectric device assembly of the seventh embodiment of the present application;

[0084] Fig. 35 is an A-A sectional view of the photoelectric device assembly of Fig. 34;

[0085] Fig. 36 is a B-B sectional view of the photoelectric device assembly of Fig. 34;

[0086] Fig. 37 is a perspective view of the photoelectric device assembly of the seventh embodiment of the present application, viewed in the back direction;

[0087] Fig. 38 is a perspective view of the cover plate and the shielding layer in the photoelectric device assembly of the seventh embodiment of the present application, viewed in the back direction;

[0088] Fig. 39 is a front view of the photoelectric device assembly of the eighth embodiment of the present application, in which the cover plate is omitted;

[0089] Fig. 40 is an A-A sectional view of the photoelectric device assembly of Fig. 39;

[0090] Fig. 41 is a B-B sectional view of the photoelectric device assembly of Fig. 39;

[0091] FIG. 42 is a perspective view of the optoelectronic device assembly of the eighth embodiment of the present application, viewed from the back side;

[0092] FIG. 43 is a perspective view of a substrate, a shielding layer, and a sealant of the optoelectronic device assembly of the eighth embodiment of the present application, viewed from the back side;

[0093] FIG. 44 is a front view of the optoelectronic device assembly of the ninth embodiment of the present application;

[0094] FIG. 45 is a cross-sectional view of the optoelectronic device assembly of FIG. 44, taken along line A-A;

[0095] FIG. 46 is a cross-sectional view of the optoelectronic device assembly of FIG. 44, taken along line B-B;

[0096] FIG. 47 is a perspective view of the optoelectronic device assembly of the ninth embodiment of the present application, viewed from the back side;

[0097] FIG. 48 is a perspective view of a cover plate and a shielding layer of the optoelectronic device assembly of the ninth embodiment of the present application, viewed from the back side;

[0098] FIG. 49 is an exploded view of a rearview mirror according to the tenth embodiment of the present application;

[0099] FIGS. 49A to 49H are schematic views of various operating states of a mirror module according to different configurations;

[0100] FIG. 50 is an exploded view of a rearview mirror according to the eleventh embodiment of the present application;

[0101] FIG. 51 is a flowchart of a method of manufacturing an optoelectronic device assembly according to an embodiment of the present application. DETAILED DESCRIPTION

[0102] For the purpose of making the object, technical solutions, and advantages of the present application clearer, the present application will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0103] Reference will now be made in detail to the exemplary embodiments of the present application, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0104] The shapes, sizes, ratios, angles, and numbers disclosed in the accompanying drawings for describing the embodiments of the present application are merely examples, and thus the present application is not limited to the illustrated details. Like reference numerals refer to like elements throughout. In the following description, detailed descriptions of functions or constructions known to those skilled in the art will be omitted when it is determined that they would unnecessarily obscure the gist of the present application.

[0105] In the case of using "include", "have" and "comprise" in the description of the present specification, other parts can be added unless "only" is used. The singular form can include the plural form unless it is described to the contrary.

[0106] In explaining elements, the elements are explained to include error ranges, although not explicitly described.

[0107] In the description of the embodiments of the present invention, when a structure (for example, an electrode, a line, a wiring, a layer, or a contact) is described as being formed on an upper portion / lower portion of another structure or on the upper surface / lower surface of another structure, this description should be understood to include a case where the structures contact each other, in addition to a case where a third structure is provided therebetween.

[0108] In describing the time relationship, for example, when the time order is described as "after", "subsequently", "next", and "before", unless "just" or "immediately" is used, a discontinuous case can be included.

[0109] It should be understood that although the terms "first", "second", and the like can be used herein to describe various elements, the elements should not be limited by these terms. The terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element without departing from the scope of the present invention.

[0110] The "X-axis direction", "Y-axis direction", and "Z-axis direction" should not be explained only by the geometrical relationship of being perpendicular to each other, but can have a wider directionality within a range in which the elements of the present invention can function.

[0111] The term "at least one of" should be understood to include any and all combinations of one or more of the listed items. For example, the meaning of "at least one of a first item, a second item, and a third item" represents all combinations of the first item, the second item, and the third item, as well as two or more of the first item, the second item, and the third item.

[0112] The features of various embodiments of the present invention can be partially or wholly connected or combined with each other, and can interoperate in various ways and be driven by technology, as can be sufficiently understood by those skilled in the art. Embodiments of the present invention can be executed independently of each other, or can be executed together in a mutually dependent relationship.

[0113] Hereinafter, example embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0114] Example 1

[0115] Figure 1 shows a front view of a photoelectric device assembly according to a first embodiment of the present application, Figure 2 shows a cross-sectional view of the photoelectric device assembly of Figure 1 along the line A-A, and Figure 3 shows a cross-sectional view of the photoelectric device assembly of Figure 1 along the line B-B. Figure 4 shows a perspective view of the photoelectric device assembly from a back direction according to the first embodiment, and Figure 5 shows a perspective view of a cover plate and a shielding layer of the photoelectric device assembly from a back direction according to the first embodiment. As shown in Figures 1 to 5, the photoelectric device assembly includes a photoelectric device 102 and a support plate. In the first embodiment, the support plate is a cover plate 101 which is provided separately from the photoelectric device 102. The cover plate 101 is made of glass and serves to protect the photoelectric device assembly. In the first embodiment, the cover plate 101 is larger than the photoelectric device 102 and has a peripheral edge which protrudes outwardly from the photoelectric device 102. Since the cover plate 101 is provided separately from the photoelectric device 102, the cover plate 101 is not part of the photoelectric device 102. This provides more design space for the structure and manufacturing process of the cover plate 101.

[0116] The photoelectric device assembly has a visible area A2. The size and location of the visible area A2 can be determined by the structure of the photoelectric device 102. The visible area A2 can be one or a combination of an area for displaying an image and an area for mainly reflecting ambient light. The non-visible area refers to an area of the photoelectric device assembly other than the visible area. In the first embodiment, the cover plate 101 has a shielding layer 1031 provided in the non-visible area. The shielding layer 1031 has a light-transmissive area A11 and a non-light-transmissive area A12. The light-transmissive area A11 has a higher light transmittance than the non-light-transmissive area A12.

[0117] The light-transmitting region A11 can be used in practice to receive external ambient light and directly incident or guide into the photosensitive sensor for detecting the luminosity information of the external ambient light, which can be the light intensity. The light-transmitting rate of the light-transmitting region A11 is designed to be greater than that of the other regions A12 of the shielding layer 1031, which can improve the intensity of the received ambient light and further improve the detection accuracy and precision. At the same time, the light-transmitting region A11 is arranged in the shielding layer 1031 and will not appear in the visible area and be obviously perceived by the user. Further, when the entire optoelectronic device assembly is assembled into a closed product by the shell structure, the user observes the optoelectronic device assembly from the outside, and the background of the light-transmitting region A11 is the internal black background of the product, which is not easy to perceive the difference between the light-transmitting region A11 and the other regions A12 of the shielding layer 1031. Therefore, the user cannot easily find the existence of the light-transmitting region A11 and other components such as the related sensors behind it from the outside, and the visual hiding function is achieved. It should be noted that the technical effect of the above-mentioned hiding function is true for both the bright reflective state and the dark light-absorbing state of the shielding layer 1031 when viewed from the outside as a whole.

[0118] In the present application, there are many specific implementation methods to achieve that the light-transmitting rate of the light-transmitting region is greater than that of the other regions of the shielding layer. In the present embodiment, the unit area usage of the light-blocking material arranged in the light-transmitting region is less than that of the other regions, and more specifically, the number of layers of the light-blocking material layer arranged in the light-transmitting region is less than that of the other regions.

[0119] Referring to FIGS. 2-5, the shielding layer 1031 includes multiple layers of light-blocking material, and in the present embodiment, the multiple layers of light-blocking material include a reflective layer 10311 and a light-absorbing layer 10312. The light-absorbing layer 10312 is not arranged at the position of the light-transmitting region A11, and the other regions A12 of the shielding layer 1031 except the light-transmitting region A11 are provided with a two-layer structure (the reflective layer 10311 and the light-absorbing layer 10312). In order to further protect the reflective layer 10311 arranged in the light-transmitting region A11 (for example, to avoid oxidation or mechanical damage of the reflective layer material), in the preferred mode, a transparent protective layer is arranged on the surface of the reflective layer 10311 in the light-transmitting region A11.

[0120] The reflective layer 10311 can be a metal layer or a mixed layer composed of a metal layer and a metal oxide layer. The metal material in the metal layer can be at least one of Ag, Ti, Al, and Cr. The metal oxide can be at least one of niobium oxide, aluminum oxide, and titanium oxide. The reflective layer 10311 can be prepared by physical vapor deposition methods such as vacuum evaporation or magnetron sputtering, or optical circuit methods. The reflective layer can be designed as a partially reflective and partially transmissive layer (such as a semi-reflective and semi-transmissive layer), so that even if the reflective layer 10311 covers the light-transmitting region A11, the light-transmitting region A11 can still transmit external ambient light.

[0121] The light-absorbing layer 10312 can be an ink layer having an effect of absorbing visible light. The ink layer can be formed by a printing process, such as a screen printing process.

[0122] In the present embodiment, the light-reflecting layer 10311 and the light-absorbing layer 10312 are both located on the side of the cover plate 101 away from the external incident light. In combination with FIG. 2, the optoelectronic device 102 is located on the side of the cover plate 101 away from the external incident light. After the entire optoelectronic device assembly and other related housing elements are combined to form a complete product, the optoelectronic device 102 is located inside the product. Therefore, the side of the cover plate 101 away from the external incident light is the side of the cover plate 101 facing the optoelectronic device 102. Thus, in the present embodiment, the light-reflecting layer 10311 and the light-absorbing layer 10312 are arranged on the side of the cover plate 101 facing the optoelectronic device 102. Further, the light-absorbing layer 10312 is further located on the side of the light-reflecting layer 10311 away from the external incident light, i.e., on the side of the light-reflecting layer 10311 facing the optoelectronic device 102. In particular, in the structure shown in FIG. 1, the light-reflecting layer 10311 is formed on the surface of the cover plate 101, and the light-absorbing layer 10312 is formed on the surface of the light-reflecting layer 10311.

[0123] In the present embodiment, the light-reflecting layer 10311 can have a certain reflectivity to the external incident light, and the light-absorbing layer 10312 can absorb the light transmitted through the light-reflecting layer 10311. Thus, the area A12 having both the light-reflecting layer 10311 and the light-absorbing layer 10312 will have a full reflection effect (i.e., almost no transmission) when observed from the outside, forming a mirror effect. The light-transmitting area A11 having only the light-reflecting layer 10311 has the same reflectivity as the other areas A12, so the reflected light intensity of the external incident light is almost the same as that of the other areas A12. When the entire optoelectronic device assembly is assembled into a product, the black background inside the product plays a role similar to that of the light-absorbing layer 10312, so that the user will hardly perceive the difference between the light-transmitting area A11 and the other areas A12 when viewed from the outside, and the light-transmitting area A11 and the other areas A12 will both have a full reflection effect. The light-sensitive sensor and other components arranged on the inside of the light-transmitting area A11 (i.e., the side away from the external incident light) are visually hidden.

[0124] The shielding layer in the present embodiment can also be used to shield the frame glue, electrical circuits and other structures in the optoelectronic device, so that the user cannot observe these structures from the outside.

[0125] In the embodiments of the present application, the optoelectronic device can include a light modulation module with adjustable optical properties. The optical properties can include transmission, reflection, diffraction, scattering, and / or absorption. As an example, the light modulation module includes a mirror module with adjustable reflectivity. In addition, the light modulation module can also include a display module located on the side of the mirror module away from the support plate.

[0126] In addition, in order to further protect the surface of the support plate facing the external environment, a protective layer (not shown in the figure) can also be provided on the support plate, which is located on the side of the support plate away from the optoelectronic device. The protective layer can include any one or any combination of an anti-glare layer (such as an AG layer), an anti-fingerprint layer (such as an AF layer), and an anti-reflection layer (such as an AR layer).

[0127] In addition, the cover plate and the optoelectronic device can be combined together by full bonding or frame bonding, so that full bonding glue or frame glue is also provided between the cover plate and the optoelectronic device in practice.

[0128] The following describes in detail the manufacturing process of the optoelectronic device assembly in the embodiments.

[0129] FIGS. 6-10 show schematic diagrams of the results of each stage of a manufacturing process of the optoelectronic device assembly in the embodiments.

[0130] Referring to FIG. 6, a cover plate 101 is first provided, which can be made of glass.

[0131] The step of forming the light-reflecting layer 10311 on the cover plate 101 can be performed in two steps. Referring to FIG. 7, a light-reflecting layer 10311a can first be formed on the entire surface of the cover plate 101.

[0132] The material of the light-reflecting layer 10311a can be metal, and the light-reflecting layer 10311a can be formed by physical vapor deposition or chemical vapor deposition, in which the chemical vapor deposition method can use an electroplating process. In addition, in order to reduce the manufacturing cost of the light-reflecting layer 10311a, a printing process can also be used, such as a printing metal material ink (such as a semi-transparent mirror surface silver ink) process to form the light-reflecting layer 10311a.

[0133] Referring to FIG. 8, the area of the light-reflecting layer 10311a including the visible area is then removed to obtain the final light-reflecting layer 10311. In this way, the light-reflecting layer 10311 will be arranged in the non-visible area of the optoelectronic device assembly.

[0134] The removal of the partial area of the light-reflecting layer 10311a can be performed by a chemical removal process such as stripping.

[0135] It should be noted that in alternative embodiments, the two steps shown in FIG. 7 and FIG. 8 can be replaced by one step, i.e. the light-reflecting layer 10311 is directly formed on the target area where the light-reflecting layer 10311 is required to be set. Specifically, the light-reflecting layer 10311 can be formed on the partial area of the surface of the cover plate 101 by means of a mask, or the light-reflecting layer 10311 can be formed on the partial area of the surface of the cover plate 101 by means of a printing process (such as a screen printing process).

[0136] Then, the light-absorbing layer 10312 is formed on the surface of the light-reflecting layer 10311 except the light-transmitting area A11, as shown in FIG. 9.

[0137] The light-absorbing layer 10312 can be formed on the surface of the light-reflecting layer 10311 except the light-transmitting area A11 by means of a printing process (such as a screen printing process) using a dark ink material (such as a black ink material).

[0138] Thus, the shielding layer 1031 is formed.

[0139] Finally, the optoelectronic device 102 is combined with the cover plate 101 with the shielding layer 1031, as shown in FIG. 10. In the preferred embodiments, the support plate and the optoelectronic device can be combined together by full bonding or frame bonding.

[0140] Embodiment Two

[0141] In practice, the light-reflecting layer 10311 and the light-absorbing layer 10312 in the shielding layer 1031 can be arranged on both sides of the cover plate 101 respectively. FIGS. 11-16 show the structural schematic diagram of this alternative embodiment, wherein FIG. 11 is a front view of the optoelectronic device assembly of this alternative embodiment, FIG. 12 is an A-A sectional view of the optoelectronic device assembly in FIG. 11, FIG. 13 is a B-B sectional view of the optoelectronic device assembly in FIG. 11, FIG. 14 is a perspective view of the optoelectronic device assembly of this alternative embodiment from the back direction, FIG. 15 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of this alternative embodiment from the back direction, and FIG. 16 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of this alternative embodiment from the front direction. In this alternative embodiment, the light-reflecting layer 10311 is arranged on the side of the cover plate 101 facing the external incident light, and the light-absorbing layer 10312 is arranged on the side of the cover plate 101 away from the external incident light. The light-absorbing layer 10312 is still not arranged in the light-transmitting region A11. Therefore, for the external incident light, there is still a two-layer structure including the light-reflecting layer 10311 and the light-absorbing layer 10312 in the regions of the shielding layer 1031 other than the light-transmitting region A11; and for the external incident light, there is still no effect of the light-absorbing layer 10312 in the light-transmitting region A11. Therefore, the overall visual effect of this alternative embodiment is similar to that of the optoelectronic device assembly shown in FIG. 1, and the user still cannot easily find the light-transmitting region A11 and other components such as the back-related sensor from the outside, thereby realizing the visual hiding function.

[0142] Of course, the light-reflecting layer 10311 and the light-absorbing layer 10312 can also be arranged on the side of the cover plate 101 facing the external incident light (i.e., the side away from the optoelectronic device 102), but the light-absorbing layer 10312 needs to be arranged on the side of the light-reflecting layer 10311 away from the external incident light. That is, the light-absorbing layer 10312 is arranged on the side of the cover plate 101 facing the external incident light, and then the light-reflecting layer 10311 is arranged on the side of the light-absorbing layer 10312 facing the external incident light. Of course, the light-absorbing layer 10312 still needs not to be arranged in the light-transmitting region A11. It should be understood by those skilled in the art that the visual effect of the device of this alternative embodiment is similar to that of the above-mentioned embodiments.

[0143] It should be noted that arranging the light-reflecting layer and the light-absorbing layer in the shielding layer on the same side of the cover plate 101 helps to realize the alignment between the light-reflecting layers, while arranging them on both sides of the cover plate 101 can easily increase the alignment error in the alignment process due to the thickness of the cover plate 101.

[0144] Among the various schemes of arranging the reflective layer and the light-absorbing layer of the shielding layer on the same side of the cover plate 101, the scheme of arranging the reflective layer and the light-absorbing layer of the shielding layer on the side of the cover plate 101 facing away from the external incident light (i.e. the side facing the optoelectronic device 102) is more preferable, because the reflective layer and the light-absorbing layer will form a shadow-forming reflection image on at least one surface of each component (such as the optoelectronic device 102) in the rear part of the cover plate 101, and when the shadow exceeds a certain degree, it can be perceived from the outside of the entire assembly, affecting the user's visual experience. Arranging the layers of the shielding layer closer to the optoelectronic device 102 helps to reduce the degree of the above-mentioned shadow.

[0145] In each of the above embodiments, the light-absorbing layer 10312 can be replaced by another reflective layer, and of course the other reflective layer is arranged to avoid the light-transmitting region A11. In this way, for the external incident light, only one reflective layer 10311 is reflected in the light-transmitting region A11, and part of the ambient light can still be transmitted for the purpose of detecting ambient light by the rear light-sensitive sensor; and in other regions of the shielding layer other than the light-transmitting region A11, the reflective layer 10311 and the other reflective layer will have a superimposed effect, increasing the reflectivity, and even achieving a full reflection effect, shielding the relevant structures behind the other regions. For similar reasons, when a user observes the optoelectronic device assembly from the outside, the background of the light-transmitting region A11 is the internal black background of the product, and it is not easy to perceive the difference between the light-transmitting region A11 and other regions of the shielding layer, so the user cannot easily discover the existence of the light-transmitting region A11 and other components such as the rear sensor, achieving a visual hiding function.

[0146] The materials and reflectivities of the two reflective layers or multiple reflective layers can be different.

[0147] Embodiment Three

[0148] When the shielding layer adopts a scheme of multiple reflective layers instead of a combination of a reflective layer and a light-absorbing layer, the relative positional relationship between the reflective layers can also adopt the following alternative embodiment scheme in addition to the positional relationship between the reflective layer and the light-absorbing layer in the above embodiments. Figure 17 shows a front view of the optoelectronic device assembly of this alternative embodiment, Figure 18 is an A-A sectional view of the optoelectronic device assembly in Figure 17, Figure 19 is a B-B sectional view of the optoelectronic device assembly in Figure 17, Figure 20 is a perspective view of the optoelectronic device assembly of this alternative embodiment from the back direction, and Figure 21 is a perspective view of the cover plate and the shielding layer of the optoelectronic device assembly of this alternative embodiment from the back direction. Since the light-absorbing layer is no longer arranged in the shielding layer, the order of the reflective layers can be arranged at will, as long as the final result is that the light-transmitting region of the shielding area has a higher light-transmitting rate than other regions of the shielding area.

[0149] Referring to FIGS. 17-21, in this alternative embodiment, the shielding layer 1032 includes a reflective layer 10321 and a reflective layer 10322, wherein the reflective layer 10321 covers the entire area of the shielding layer 1032, and the reflective layer 10322 covers the area A12 of the shielding layer 1032 except the light-transmitting area A11. Thus, in the light-transmitting area A11, the shielding layer 1032 has no light-absorbing effect of the light-absorbing layer 10312; and in the area A12 other than the light-transmitting area A11, the shielding layer 1032 has a reflection effect of the two reflective layers (i.e., the reflective layer 10321 and the reflective layer 10322) on the external incident light. Therefore, for the external incident light, the light-transmitting rate of the shielding layer 1032 in the light-transmitting area A11 is greater than that in the other areas.

[0150] In this embodiment, in the two reflective layers of the shielding layer, the reflective layer 10322 disposed outside the light-transmitting area A11 is closer to the cover plate 101, for example, the reflective layer 10322 is disposed on the surface of the cover plate 101, and the other reflective layer 10321 covering the entire area of the shielding layer is disposed on the surface of the reflective layer 10322 away from the cover plate. It should be understood by those skilled in the art that the position order between the two reflective layers described above can be interchanged, because both are reflective layers, as long as the optical effect of the two layers after superposition in each area meets the expected result. Of course, the two reflective layers can also be disposed on both sides of the cover plate 101. In addition, in this embodiment, both of the two reflective layers are disposed on the side of the cover plate 101 away from the external incident light (i.e., the side facing the optoelectronic device 102), and in an alternative embodiment, both of the two reflective layers can also be disposed on the side of the cover plate 101 facing the external incident light (i.e., the side facing away from the optoelectronic device 102).

[0151] However, it should be noted that disposing the two reflective layers on the same side of the cover plate 101 helps to achieve the alignment between the two reflective layers, and disposing the two reflective layers on both sides of the cover plate 101 can easily increase the alignment error in the alignment process due to the thickness of the cover plate 101. Among the various schemes of disposing the reflective layers of the shielding layer on the same side of the cover plate 101, the scheme of disposing the reflective layers of the shielding layer on the side of the cover plate 101 facing away from the external incident light (i.e., the side facing the optoelectronic device 102) is more optimal, because the multiple reflective layers will form a shadow form of reflection imaging on at least one surface of each component (such as the optoelectronic device 102) in the rear part of the cover plate 101. When the shadow exceeds a certain degree, the user can perceive it from the outside of the entire assembly, affecting the user's visual experience. And the closer the structure of the shielding layer is disposed to the position of the optoelectronic device 102, the lower the degree of the above-mentioned shadow.

[0152] The light-shielding layer 1032 can be formed layer by layer during the manufacturing process. The light-shielding layer can be formed by a mask or other method to form the light-shielding layer in the target area. Alternatively, the light-shielding layer can be formed in the entire area of the cover plate 101, and then the light-shielding layer in the non-target area can be removed by a removal process to obtain the final light-shielding layer structure. The light-shielding layer can be formed by physical vapor deposition or chemical vapor deposition, and the chemical vapor deposition method can use an electroplating process. Alternatively, the light-shielding layer can be formed by a printing process, for example, by using a printing metal material ink (e.g., a semi-transparent silver ink) to form the light-shielding layer.

[0153] Embodiment Four

[0154] In the above embodiments, the light-shielding layer has a smaller amount of light-shielding material per unit area in the light-transmitting area than in other areas. This can be achieved by having fewer layers of light-shielding material in the light-transmitting area than in other areas. Alternatively, this can be achieved by having a smaller thickness of light-shielding material in the light-transmitting area than in other areas.

[0155] For example, FIG. 22 shows a front view of a light-electricity device assembly according to another embodiment, FIG. 23 is a cross-sectional view of the light-electricity device assembly of FIG. 22 along line A-A, FIG. 24 is a cross-sectional view of the light-electricity device assembly of FIG. 22 along line B-B, and FIG. 25 is a perspective view of the light-electricity device assembly of FIG. 22 viewed from the back. FIG. 26 is a perspective view of the cover plate and the light-shielding layer of the light-electricity device assembly of FIG. 22 viewed from the back. With reference to FIGS. 22-26, the light-electricity device assembly includes a cover plate 101, a light-electricity device 102, and a light-shielding layer 1033 on the cover plate 101. The light-shielding layer 1033 has a smaller thickness in the light-transmitting area Al 1 than in other areas, and the light-shielding layer 1033 can be made of a light-reflecting material. The reflectivity of the light-shielding layer 1033 to external incident light is positively correlated with the thickness of the light-shielding layer 1033. Therefore, the light-transmitting area Al 1 has a larger light-transmitting rate than other areas of the light-shielding layer 1033 because the thickness of the light-shielding layer 1033 in the light-transmitting area Al 1 is relatively small.

[0156] In this embodiment, the light-shielding layer 1033 has a groove 1033a in the light-transmitting area Al 1 to achieve a smaller thickness in this area. In this embodiment, the opening of the groove 1033a faces the cover plate 101.

[0157] It should be noted that in an alternative embodiment, the groove 1033a of the light-shielding layer 1033 in the light-transmitting area Al 1 can be replaced by a hole, i.e., the light-shielding layer 1033 in this area is not provided with any material.

[0158] The shielding layer 1033 can also be made of light-absorbing materials, such as ink (e.g., black ink) or mirror silver ink.

[0159] Embodiment Five

[0160] In another alternative embodiment, the openings of the grooves 1034a of the shielding layer 1034 can also face away from the cover plate 101. Fig. 27 shows a perspective view of the optoelectronic device assembly of this alternative embodiment from the back direction, and Fig. 28 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of this embodiment from the back direction.

[0161] In addition, in Embodiment Four and Embodiment Five, the shielding layer is arranged on the side of the cover plate 101 that is away from the external incident light (i.e., the side facing the optoelectronic device 102), and in other embodiments, the shielding layer 1033 can also be arranged on the side of the cover plate 101 that faces the external incident light (i.e., the side away from the optoelectronic device 102). It should be noted that arranging the shielding layer 1033 on the side of the cover plate 101 that is away from the external incident light helps to reduce the user's perception of the shadow imaging formed by the shielding layer 1033 on the surface of the various components on the back of the cover plate 101.

[0162] It should be noted that in an alternative embodiment, the grooves 1034a of the shielding layer 1034 at the light-transmitting region A11 can be replaced by holes, i.e., the shielding layer 1034 at this light-transmitting region A11 is not provided with any material.

[0163] The shielding layer 1034 can also be made of light-absorbing materials, such as ink (e.g., black ink) or mirror silver ink.

[0164] Embodiment Six

[0165] In each of the above embodiments, to achieve the scheme in which the light-transmitting region of the shielding layer has a light-transmitting rate greater than that of other regions of the shielding layer, the amount of light-blocking material per unit area arranged by the shielding layer in the light-transmitting region is less than that of other regions. In addition to this, different materials can also be selected for different regions so that the material used by the shielding layer in the light-transmitting region has a light-transmitting rate greater than that of the material used in other regions.

[0166] Fig. 29 shows a front view of a photoelectric device assembly according to another embodiment, Fig. 30 is a cross-sectional view of the photoelectric device assembly of Fig. 29 along A-A, Fig. 31 is a cross-sectional view of the photoelectric device assembly of Fig. 29 along B-B, and Fig. 32 is a perspective view of the photoelectric device assembly of this alternative embodiment from a back direction, and Fig. 33 is a perspective view of the cover plate and the shielding layer in the photoelectric device assembly of this embodiment from a back direction. With reference to Figs. 29-33, the photoelectric device assembly includes a cover plate 101, a photoelectric device 102, and a shielding layer 1035 on the cover plate 101. The shielding layer 1035 includes a first shielding layer 1035a on the light-transmissive region Al l and a second shielding layer 1035b on the other region A12 outside the light-transmissive region Al l. The first shielding layer 1035a has a light transmissivity greater than that of the second shielding layer 1035b. The first shielding layer 1035a and the second shielding layer 1035b can have the same thickness and occupy different regions of the shielding layer 1035, respectively. The first shielding layer 1035a and the second shielding layer 1035b can both be made of a light-reflective material, but the first shielding layer 1035a is made of a material having a lower light reflectivity and a higher light transmissivity, while the second shielding layer 1035b is made of a material having a higher light reflectivity or even close to a full reflectivity.

[0167] It is to be noted that the material of the first shielding layer 1035a can also be a completely transparent material, i.e., a material that absorbs little or no light, such as a transparent protective ink.

[0168] The second shielding layer 1035b can also be made of a light-absorbing material, such as an ink (e.g., black ink) or a mirror silver ink.

[0169] It is to be noted that in this embodiment, the shielding layer 1035 is arranged on the side of the cover plate 101 away from the external incident light (i.e., the side facing the photoelectric device 102), and in other embodiments, the shielding layer 1035 can also be arranged on the side of the cover plate 101 facing the external incident light (i.e., the side away from the photoelectric device 102). It is to be noted that the arrangement of the shielding layer 1035 on the side of the cover plate 101 away from the external incident light helps to reduce the user's perception of the shadow imaging of the various components on the surface of the cover plate 101 at the back.

[0170] In the above embodiments, the size of the cover plate 101 is larger than the size of the optoelectronic device 102, and the edge of the cover plate 101 protrudes outward from the edge of the optoelectronic device 102. In this case, the light-transmitting region in the shielding layer is arranged in the protruding region, which can more conveniently arrange other components such as sensors behind the light-transmitting region, avoiding conflicts with the position of the optoelectronic device 102. Moreover, at least part of the light-shielding material layer (including the light-reflecting material and the light-absorbing material) in the shielding layer in the protruding region can be made by printing process, because the thickness precision of the shielding layer in this region is not high, and thus a printing process with lower cost can be used.

[0171] Embodiment Seven

[0172] In another embodiment, the size of the cover plate 101 can be designed to be the same as the size of the optoelectronic device, as shown in the front view of the optoelectronic device assembly of another embodiment in FIG. 34, the A-A sectional view of the optoelectronic device assembly in FIG. 34 is shown in FIG. 35, the B-B sectional view of the optoelectronic device assembly in FIG. 34 is shown in FIG. 36, the perspective view of the optoelectronic device assembly of this alternative embodiment in the direction of the back is shown in FIG. 37, and the perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of this embodiment in the direction of the back is shown in FIG. 38. Referring to FIGS. 34-38 simultaneously, the optoelectronic device assembly includes a cover plate 101, an optoelectronic device 1021, and a shielding layer 1031 on the cover plate 101. The structure of the cover plate 101 and the shielding layer 1031 in this embodiment can be completely the same as the structure of the cover plate and the shielding layer in the optoelectronic device assembly in the embodiment one shown in FIG. 1, and thus will not be described again here. The main difference is that the size of the optoelectronic device 1021 is basically the same as the size of the cover plate 101 in this embodiment, and the edge of the cover plate 101 does not protrude outward from the edge of the optoelectronic device 1021, so the light-transmitting region A11 of the shielding layer 1031 is arranged in the projection region of the optoelectronic device 1021. Of course, the shielding layer 1031 is still in the non-visible area, such as the projection region outside the sealing frame of the optoelectronic device 1021 or the area corresponding to the electrical wiring. Since the shielding layer 1031 is in the non-visible area, the area of the light-transmitting region A11 does not affect the normal use function area (such as the mirror surface area or the image display area) of the optoelectronic device 1021, so the area of the optoelectronic device 1021 corresponding to the light-transmitting region A11 can be designed to have light-transmitting properties (such as transparent or perforated), so that the devices such as sensors for detecting external ambient light through the light-transmitting region A11 can be installed at or behind this position of the optoelectronic device assembly 1021, and can normally receive the external ambient light transmitted through the light-transmitting region A11.

[0173] Of course, it should be clear to those skilled in the art that in this alternative embodiment, the composition of the shielding layer 1031, the relative positions of the layers, and the relative positions of the layers of the shielding layer and the cover plate 101 can all be replaced by the alternatives in Embodiments Two through Six, and will not be described again here.

[0174] In the above embodiments, the optoelectronic device assembly is provided with a separate cover plate. In order to further reduce the thickness of the entire assembly, the cover plate can also be removed, and part of the structure of the optoelectronic device can be reused to serve as the cover plate. For example, the optoelectronic device can include at least one substrate, and one of the substrates simultaneously serves as the support plate in the present application.

[0175] Embodiment Eight

[0176] FIG. 39 shows a front view of an optoelectronic device assembly without a cover plate according to another embodiment of the present application, FIG. 40 is an A-A cross-sectional view of the optoelectronic device assembly in FIG. 39, FIG. 41 is a B-B cross-sectional view of the optoelectronic device assembly in FIG. 39, FIG. 42 is a perspective view of the optoelectronic device assembly in this embodiment from the back, and FIG. 43 is a perspective view of a layer of substrate, a shielding layer, and a sealant frame in the optoelectronic device assembly in this embodiment from the back. Referring to FIGS. 39 to 43 together, the optoelectronic device assembly includes an optoelectronic device 1022, and no separate cover plate is provided. The optoelectronic device 1022 includes a light modulation module, which includes a first substrate 10221 and a second substrate 10222, and an optoelectronic material (not shown) disposed between the first substrate 10221 and the second substrate 10222. The optoelectronic material is surrounded by a sealant frame 10224, which can also serve to fix the first substrate 10221 and the second substrate 10222 together, and together with the first substrate 10221 and the second substrate 10222 forms a sealed cavity, which seals the optoelectronic material therein. The optoelectronic material is controlled by an electric field to achieve adjustment of the optical properties of the optoelectronic device 1022. The optical properties herein include transmission, reflection, diffraction, scattering, and / or absorption of light emitted by an external / internal light source. The external light source herein can refer to, for example, external ambient light, and the internal light source can refer to, for example, light emitted by an internal display device such as a display module.

[0177] In assembling the optoelectronic device assembly 1022 with other housing devices, the first substrate 10221 is closer to the side of the external incident light relative to the second substrate 10222. Therefore, in this embodiment, the shielding layer 10223 is provided on the first substrate 10221. The shielding layer 10223 is located in the non-visible area of the entire optoelectronic device assembly 1022, and can be used to shield the sealant frame 10224, electrical wiring, and other devices that do not need to be perceived by the user. The first substrate 10221 simultaneously serves as a support plate in this embodiment.

[0178] The first substrate 10221 protrudes outward from the edges of other components of the optoelectronic device assembly 1022. The shielding layer 10223 is provided with a light-transmitting region A11, and the region of the shielding layer 10223 other than the light-transmitting region A11 is marked as A12, wherein the light-transmitting region A11 of the shielding layer 10223 has a light-transmitting rate greater than that of the other region A12 of the shielding layer 10223. In the present embodiment, the structure of the shielding layer 10223 is substantially the same as that of the shielding layer 1031 shown in FIG. 1. Specifically, the shielding layer 10223 comprises a multilayer structure, in the present embodiment, a light-reflecting layer 102231 and a light-absorbing layer 102232. The light-absorbing layer 102232 is not present at the position of the light-transmitting region A11, i.e., the two-layer structure (the light-reflecting layer 102231 and the light-absorbing layer 102232) is provided in the region of the shielding layer 1031 other than the light-transmitting region A11. The light-reflecting layer 102231 and the light-absorbing layer 102232 are both located on the side of the first substrate 10221 away from the external incident light, and in particular, in the structure shown in the present embodiment, the light-reflecting layer 102231 is formed on the surface of the first substrate 10221, and the light-absorbing layer 102232 is formed on the surface of the light-reflecting layer 102231. The light-reflecting layer 102231 can have a certain reflectivity to the external incident light, and the light-absorbing layer 102232 can absorb the light transmitted through the light-reflecting layer 10311. It is not difficult to conclude that the scheme of the embodiments shown in FIGS. 37-41 further reduces the product thickness relative to the scheme of the embodiments shown in FIGS. 1-5, while still achieving the visual hiding effect of the light-transmitting region and the related sensors behind it, due to the omission of a separate cover plate.

[0179] In addition, it should be clear to those skilled in the art that the shielding layer in the present embodiment scheme, which achieves a light-transmitting rate of the light-transmitting region greater than that of the other region of the shielding layer, is implemented in a manner similar to that of the shielding layer in Embodiment One, and in alternative embodiments, the shielding layer schemes in Embodiments Two to Six can also be used, with the difference being that the cover plate in Embodiments Two to Six is replaced by the first substrate.

[0180] In the present embodiment, the light-transmitting region A11 is located in the region of the first substrate 10221 protruding outward from the edges of other components of the optoelectronic device assembly 1022, which makes it more convenient to arrange other components such as sensors behind the light-transmitting region, avoiding position conflicts with other components of the optoelectronic device assembly 1022.

[0181] Embodiment Nine

[0182] In another alternative embodiment, the first substrate can be designed to have substantially the same size as the second substrate, and the first substrate does not protrude outward from the edges of other components of the optoelectronic device assembly. As shown in a front view of the optoelectronic device assembly of this embodiment in FIG. 44, FIG. 45 is a cross-sectional view of the optoelectronic device assembly in FIG. 44 along A-A, FIG. 46 is a cross-sectional view of the optoelectronic device assembly in FIG. 44 along B-B, and FIG. 47 is a perspective view of the optoelectronic device assembly of this alternative embodiment from a back direction, and FIG. 48 is a perspective view of the cover plate and the shielding layer in the optoelectronic device assembly of this embodiment from a back direction. Referring to FIGS. 44-48 simultaneously, in this embodiment, the first substrate 10221 has substantially the same size as the second substrate 10222'. Components in this embodiment that have the same reference numerals as in Embodiment Eight are the same components, and will not be described again here.

[0183] In this embodiment, the light-transmissive region Al l on the shielding layer 10223 provided on the first substrate 10221 is located within the projection region of the second substrate 10222', and it should be noted that as long as the shielding layer 10223 is located within the non-visible region, the shielding layer 10223 including the light-transmissive region Al l will not affect the function within the visible region. However, in order to ensure that the sensors and other devices behind the light-transmissive region Al l can normally receive the ambient light that has passed through the light-transmissive region Al l, the second substrate 10222' and other devices at the positions corresponding to the light-transmissive region Al l are provided with light-transmissive properties, such as being transparent or having an opening, so that the sensors can receive the ambient light that has passed through the light-transmissive region Al l, regardless of whether the sensors are provided in the opening of the second substrate 10222' or behind the second substrate 10222'.

[0184] In practice, if the second substrate 10222' is provided with an opening, the manufacturing difficulty of the process will be increased. Therefore, in a preferred embodiment, the positions on the second substrate 10222' corresponding to the light-transmissive region Al l are provided with light-transmissive properties. For example, when the sealant is a non-transparent material, the position of the sealant 10224 can be set to avoid the light-transmissive region Al l, so as to avoid the non-transparent sealant blocking the light passing through the light-transmissive region Al l. If the sealant is a transparent material, in addition to the scheme shown in FIG. 48 that avoids the light-transmissive region Al l, the sealant can also not be limited to avoid the light-transmissive region Al l, for example, the sealant can partially cover or completely cover the light-transmissive region Al l. It should be noted that when the sealant partially covers or completely covers the light-transmissive region Al l, preferably, the refractive index of the sealant is consistent with the refractive index of the first substrate 10221 as much as possible, so as to reduce the large-angle deflection of the external light passing through the interface between the first substrate 10221 and the sealant in the light-transmissive region Al l due to the large refractive index difference, and affect the accuracy of the detection of the ambient light by the sensors behind.

[0185] It should be understood by those skilled in the art that the shielding layer in the embodiment scheme of the present application, which realizes the transmittance of the light-transmitting region being greater than the transmittance of other regions of the shielding layer, can be implemented by using the shielding layer scheme in Embodiment One, and in alternative embodiments, the shielding layer scheme in Embodiments Two to Six can also be used, with the only difference being that the cover plate in Embodiments Two to Six is replaced by the first substrate.

[0186] In practice, when the thickness of the optoelectronic device is required to be relatively strict, for example, when a relatively thin thickness is required, the overall thickness of the shielding layer 10223 should meet the corresponding thickness requirement, which puts higher requirements on the manufacturing process precision of each layer of the shielding layer 10223. For example, when the thickness of the shielding layer 10223 is required to be relatively thin, each layer in the shielding layer 10223 can not be suitable for being formed by using a printing process, but can be more suitable for being formed by using a plating process.

[0187] Embodiment Ten

[0188] Embodiment Ten of the present application provides an implementation scheme for applying an optoelectronic device assembly to a rearview mirror scenario, the rearview mirror comprising an optoelectronic device assembly, the optoelectronic device assembly comprising an optoelectronic device and a separately arranged support plate (i.e., a cover plate), the optoelectronic device comprising a reflectivity-adjustable mirror module.

[0189] FIG. 49 shows an exploded view of a rearview mirror in the present embodiment, which comprises a cover plate 101 and a mirror module 1021, wherein the size relationship between the cover plate 101 and the mirror module 1021 is basically the same as that between the cover plate and the optoelectronic device in the aforementioned Embodiment Seven, so in the present embodiment, the cover plate 101 does not protrude from the edge of the mirror module 1021.

[0190] A shielding layer 1031 is arranged on the side of the cover plate 101 facing the mirror module 1021 (i.e., the side of the cover plate 101 facing away from the external incident light). The structure of the shielding layer 1031 is basically the same as that of the shielding layer 1031 in Embodiment One of the present application, and will not be described here again. Of course, it should be understood by those skilled in the art that the structure and arrangement position of the shielding layer 1031 can also be replaced by the schemes in Embodiments Two to Six.

[0191] The mirror module 1021 comprises a first substrate 10211 and a second substrate 10212, and an optoelectronic material (not shown in the figure) arranged between the first substrate 10211 and the second substrate 10212, the optoelectronic material being surrounded by a sealing frame glue 10214, the sealing frame glue 10214 also serving to fix the first substrate 10211 and the second substrate 10212 together, and together with the first substrate 10211 and the second substrate 10212 forming a sealed cavity for sealing the optoelectronic material therein.

[0192] In the embodiment, the optoelectronic material can be selected as a liquid crystal material. The first substrate 10211 is closer to the external incident light than the second substrate 10212. An absorbing polarizer 10210 is arranged on the side of the first substrate 10211 facing the external incident light, and a first conductive layer 10215 and a first alignment layer 10216 are arranged on the side of the first substrate 10211 facing the second substrate 10212, wherein the first alignment layer 10216 is closer to the liquid crystal material as the optoelectronic material, for example, the first alignment layer 10216 can be directly in contact with the liquid crystal material. The second conductive layer 10218 and the second alignment layer 10217 are arranged on the side of the second substrate 10212 facing the first substrate 10211, wherein the second alignment layer 10217 is closer to the liquid crystal material as the optoelectronic material. The reflective polarizer 10219 is arranged on the side of the second substrate 10212 facing away from the first substrate 10211.

[0193] By arranging the light-transmitting region A11 on the shielding layer 1031, the purpose of detecting the external ambient light through the region can be achieved, and the region and the subsequent sensor and other devices are not easily perceived from the outside, achieving a visual hiding function. Through the detection of the external ambient light, it can be determined whether the working state of the rearview mirror needs to be switched, for example, between a high reflectivity state and a low reflectivity state.

[0194] It should be noted that in the embodiment, a display module 1023 can also be preferably added to realize the function of displaying image content in the visible area of the rearview mirror. The display module 1023 can be an LCD or an OLED type display module. In a more preferred embodiment, in order to avoid a position conflict between the display module 1023 and the sensors and other devices behind the light-transmitting region A11 of the shielding layer 1031, the size of the display module 1023 can be designed to be smaller than the size of the cover plate 101, and the position of the light-transmitting region A11 is avoided.

[0195] The display module 1023 is arranged behind the reflective polarizer 10219 (i.e., away from the side facing the external incident light) in the mirror module 1021.

[0196] When the optoelectronic material is a liquid crystal material, the mirror module includes a liquid crystal light-adjusting layer, which can adopt various liquid crystal cell structures that can achieve the purpose of light adjustment, such as a TN type or a VA type liquid crystal cell.

[0197] In practice, the type of liquid crystal cell structure, the relative angle of the reflective polarizer and the absorbing polarizer used in the above mirror module are different, and the corresponding working mode is also different. The following will be described respectively by taking the mirror module using a TN type liquid crystal cell and a VA type liquid crystal cell as examples.

[0198] First configuration scheme

[0199] Figs. 49A and 49B show schematic diagrams of two operating states of the main structural elements of the mirror module of the first configuration. Note that the elements listed in Figs. 49A and 49B include elements that have a major influence on the properties of the incident light rays as well as elements such as the light source.

[0200] In this configuration, the mirror module employs a VA liquid crystal cell, and the liquid crystal material employed by the VA liquid crystal cell is labeled 10210VA. When no voltage is applied to the first conductive layer 10215 and the second conductive layer 10218 on both sides of the liquid crystal material 10210VA, the molecular alignment direction of the liquid crystal material 10210VA is perpendicular to the first substrate and the second substrate (not shown in the figure). When a voltage is applied to the first conductive layer 10215 and the second conductive layer 10218 on both sides of the liquid crystal material 10210VA, the molecular alignment direction of the liquid crystal material 10210VA will deflect to a direction parallel to the first substrate and the second substrate.

[0201] In this configuration, the absorption axis A of the absorption polarizer 10210 is set perpendicular to the reflection axis R of the reflective polarizer 10219, and the transmission axis T of the absorption polarizer 10210 is also set perpendicular to the transmission axis T of the reflective polarizer 10219.

[0202] When no voltage is applied to the liquid crystal material on both sides (V = OFF), as shown in FIG. 49A, the external ambient light r11 (usually natural light, i.e. non-polarized light) passes through the absorption polarizer 10210 and becomes linearly polarized light r12 consistent with the transmission axis direction of the absorption polarizer 10210, for example P light. At this time, the molecular arrangement direction of the liquid crystal material 10210VA is perpendicular to the first substrate and the second substrate, and almost does not change the polarization direction of the incident light, so the polarization direction of the outgoing light r13 is consistent with the polarization direction of the light r12, for example P light. Since the polarization direction of the light r13 is consistent with the reflection axis of the reflective polarizer 10219, the reflective polarizer 10219 almost completely reflects the light r13 to form reflected light r14, the polarization direction of which is consistent with the polarization direction of the light r13, for example P light. After passing through the vertically aligned liquid crystal material 10210VA again, the polarization direction of the outgoing light r15 is still consistent with the polarization direction of the light r14, for example P light. It is not difficult to deduce that the polarization direction of the light r15 is consistent with the transmission axis T of the absorption polarizer 10210, so the light r15 almost completely passes through the absorption polarizer 10210 to form outgoing light r16. It can be seen that the mirror module is in a high reflectivity state to the external ambient light at this time. When the display module 1023 displays image light r17, the polarization direction of the outgoing light r18 passing through the reflective polarizer 10219 is consistent with the transmission axis T of the reflective polarizer 10219, for example S light. After passing through the vertically aligned liquid crystal material 10210VA, the polarization direction of the outgoing light r19 is consistent with the polarization direction of the light r18, for example S light. It is not difficult to deduce that the polarization direction of the light r19 is consistent with the absorption axis A of the absorption polarizer 10210, so the light r19 is almost completely absorbed. It can be seen that the mirror module is in a low transmission state to the display of the display module 1023 inside at this time.

[0203] When a voltage is applied to both sides of the liquid crystal material 10210VA (V = ON), as shown in FIG. 49B, the molecular arrangement direction of the liquid crystal material will deflect to the direction parallel to the first substrate and the second substrate. For the purpose of analysis, it is assumed that the voltage is large enough to make the molecular arrangement direction of the liquid crystal material completely parallel to the first substrate and the second substrate. The ambient light r21 (usually natural light, i.e. non-polarized light) passes through the absorbing polarizer 10210 and becomes linearly polarized light r22 consistent with the transmission axis direction of the absorbing polarizer 10210, for example, P light. At this time, the molecular arrangement direction of the liquid crystal material 10210VA is parallel to the first substrate and the second substrate, and through reasonable design, the polarization direction of the incident light can be rotated by 90 degrees in this state, so the polarization direction of the outgoing light r23 is rotated by 90 degrees, for example, S light. Since the polarization direction of the light r23 is consistent with the transmission axis T of the reflective polarizer 10219, the reflective polarizer 10219 almost completely transmits the light r23, forming the transmitted light r24. It can be seen that at this time the mirror module is in a low reflectivity state to the external ambient light. When the display module 1023 displays the image light r25, the polarization direction of the outgoing light r26 passing through the reflective polarizer 10219 is consistent with the transmission axis T of the reflective polarizer 10219, for example, S light. After the light r26 passes through the liquid crystal material 10210VA with horizontally arranged molecules, the polarization direction of the outgoing light r27 is rotated by 90 degrees, for example, P light. It is not difficult to deduce that at this time the polarization direction of the light r27 is consistent with the transmission axis T of the absorbing polarizer 10210, so the light r27 is almost completely transmitted, forming the transmitted light r28. It can be seen that at this time the mirror module is in a high transmittance state to the display of the display module 1023 inside.

[0204] Second configuration scheme

[0205] FIGS. 49C and 49D show schematic diagrams of two working states of the main structural devices of the mirror module in the first configuration scheme. It should be noted that the devices listed in FIGS. 49C and 49D include devices that have a major impact on the properties of the incident light and light sources and the like.

[0206] In this configuration scheme, the mirror module still adopts the VA liquid crystal cell mode, and the liquid crystal material used by the VA liquid crystal cell is marked as 10210VA. Different from the first configuration scheme, the absorption axis A of the absorbing polarizer 10210 is arranged to be parallel to the reflection axis R of the reflective polarizer 10219, and further the transmission axis T of the absorbing polarizer 10210 is arranged to be parallel to the transmission axis T of the reflective polarizer 10219.

[0207] Thus, when no voltage is applied to the liquid crystal material on both sides (V=OFF), as shown in FIG. 49C, the molecular arrangement direction of the liquid crystal material 10210VA is perpendicular to the first substrate and the second substrate, and the polarization direction of the incident light is hardly changed. As shown in FIG. 14, the ambient light r31 (usually natural light, i.e. non-polarized light) passes through the absorbing polarizer 10210 and becomes linearly polarized light r32 consistent with the transmission axis direction of the absorbing polarizer 10210, for example, P light. After passing through the liquid crystal material 10210VA with vertical molecular arrangement, the polarization direction of the outgoing light r33 is consistent with that of the light r32, for example, P light. Since the polarization direction of the light r33 is consistent with the transmission axis T of the reflecting polarizer 10219, the reflecting polarizer 10219 almost completely transmits the light r13, forming outgoing light r34. It can be seen that the mirror module is in a low reflectivity state to the external ambient light at this time. When the display module 1023 displays image light r35, the polarization direction of the outgoing light r36 passing through the reflecting polarizer 10219 is consistent with the transmission axis T of the reflecting polarizer 10219, for example, P light. After passing through the liquid crystal material 10210VA with horizontal molecular arrangement, the polarization direction of the outgoing light r37 is consistent with that of the light r36, for example, P light. It can be easily deduced that the polarization direction of the light r37 is consistent with the transmission axis T of the absorbing polarizer 10210, so the light r37 almost completely transmits, forming transmitted light r38. It can be seen that the mirror module is in a high transmittance state to the display of the internal display module 1023 at this time.

[0208] When a voltage is applied to both sides of the liquid crystal material 10210VA (V = ON), as shown in FIG. 49D, the molecular arrangement direction of the liquid crystal material will deflect to the direction parallel to the first substrate and the second substrate. For the sake of analysis, it is temporarily assumed that the voltage is large enough to make the molecular arrangement direction of the liquid crystal material completely parallel to the first substrate and the second substrate. The ambient light r41 (usually natural light, i.e. non-polarized light) passes through the absorption polarizer 10210 and becomes linearly polarized light r42 consistent with the transmission axis direction of the absorption polarizer 10210, for example, P light. At this time, the molecular arrangement direction of the liquid crystal material 10210VA is parallel to the first substrate and the second substrate, and through reasonable design, the polarization direction of the incident light can be rotated by 90 degrees in this state, so the polarization direction of the outgoing light r43 is rotated by 90 degrees, for example, S light. Since the polarization direction of the light r43 is consistent with the reflection axis R of the reflective polarizer 10219, the reflective polarizer 10219 almost completely reflects the light r43 to form reflected light r44, whose polarization direction is consistent with that of the light r43, for example, S light. After passing through the liquid crystal material 10210VA arranged horizontally, the polarization direction of the outgoing light r45 is rotated by 90 degrees, for example, P light. It is not difficult to deduce that at this time the polarization direction of the light r45 is consistent with the transmission axis T of the absorption polarizer 10210, so the light 45 almost completely passes through the absorption polarizer 10210 to form outgoing light r46. It can be seen that at this time the mirror module is in a high reflectivity state to the external ambient light. When the display module 1023 displays image light r47, the polarization direction of the outgoing light r48 passing through the reflective polarizer 10219 is consistent with the transmission axis T of the reflective polarizer 10219, for example, P light. After passing through the liquid crystal material 10210VA arranged horizontally, the polarization direction of the light r48 is rotated by 90 degrees to form outgoing light r49, whose polarization direction is perpendicular to that of the light r48, for example, S light. It is not difficult to deduce that at this time the polarization direction of the light r49 is consistent with the absorption axis A of the absorption polarizer 10210, so the light r49 is almost completely absorbed. It can be seen that at this time the mirror module is in a low transmission state to the display of the display module 1023 inside.

[0209] Third configuration scheme

[0210] FIGS. 49E and 49F show schematic diagrams of two working states of the main structural devices of the mirror module of the third configuration scheme. It should be noted that the devices listed in FIGS. 49E and 49F include devices that have a major impact on the properties of the incident light and light sources and the like.

[0211] In this configuration, unlike the first and second configuration schemes, the mirror module adopts a TN liquid crystal cell mode. The liquid crystal material used in the TN liquid crystal cell is marked as 10210TN. When no voltage is applied to the first conductive layer 10215 and the second conductive layer 10218 on both sides of the liquid crystal material 10210TN, the molecular arrangement direction of the liquid crystal material 10210TN is in a twisted arrangement. At this time, the liquid crystal material 10210TN twists the polarization direction of the incident linearly polarized light by 90 degrees and then outputs it. When a large enough voltage is applied to the first conductive layer 10215 and the second conductive layer 10218 on both sides of the liquid crystal material 10210TN, the molecular arrangement direction of the liquid crystal material 10210TN is perpendicular to the first substrate and the second substrate (not shown in the figure). At this time, the liquid crystal material 10210TN hardly changes the polarization direction of the incident linearly polarized light and then outputs it.

[0212] In this configuration, the absorption axis A of the absorption polarizer 10210 is arranged perpendicular to the reflection axis R of the reflective polarizer 10219, and the transmission axis T of the absorption polarizer 10210 is also arranged perpendicular to the transmission axis T of the reflective polarizer 10219.

[0213] In this way, when no voltage is applied to the liquid crystal material (V=OFF), as shown in FIG. 49E, the external ambient light r51 (usually natural light, i.e., non-polarized light) passes through the absorption polarizer 10210 and becomes linearly polarized light r52 consistent with the transmission axis direction of the absorption polarizer 10210, for example, P light. At this time, the molecular arrangement direction of the liquid crystal material 10210TN is in a twisted arrangement. At this time, the liquid crystal material 10210TN twists the polarization direction of the incident linearly polarized light by 90 degrees and then outputs it. Therefore, the polarization direction of the outgoing light r53 passing through the liquid crystal material 10210TN is perpendicular to the polarization direction of the light r52, for example, S light. Since the polarization direction of the light r53 is consistent with the transmission axis of the reflective polarizer 10219, the reflective polarizer 10219 almost completely transmits the light r53, forming outgoing light r54. It can be seen that at this time, the mirror module is in a low reflectivity state to the external ambient light. When the display module 1023 displays image light r55, the polarization direction of the outgoing light r56 passing through the reflective polarizer 10219 is consistent with the transmission axis T of the reflective polarizer 10219, for example, S light. After the light r56 passes through the twisted liquid crystal material 10210TN, the polarization direction of the outgoing light r57 formed is perpendicular to the polarization direction of the light r56, for example, P light. It can be easily deduced that at this time, the polarization direction of the light r57 is consistent with the transmission axis T of the absorption polarizer 10210, so the light r57 is almost completely transmitted, forming outgoing light r58. It can be seen that at this time, the mirror module is in a high transmittance state to the display of the internal display module 1023.

[0214] When a voltage is applied to both sides of the liquid crystal material 10210TN (V = ON), as shown in FIG. 49F, the molecular arrangement direction of the liquid crystal material 10210TN will be perpendicular to the first substrate and the second substrate. Ambient light r61 (usually natural light, i.e. non-polarized light) passing through the absorbing polarizer 10210 will become linearly polarized light r62 (e.g. P light) in the same direction as the transmission axis of the absorbing polarizer 10210. Since the molecular arrangement direction of the liquid crystal material 10210TN is perpendicular to the first substrate and the second substrate at this time, the polarization direction of the incident light is hardly changed, so the polarization direction of the light r63 passing through the liquid crystal material 10210TN is the same as that of the light r62, e.g. P light. Since the polarization direction of the light r63 is the same as the reflection axis of the reflecting polarizer 10219, the reflecting polarizer 10219 almost completely reflects the light r63, forming reflected light r64. The polarization direction of the reflected light r64 is the same as that of the light r63, e.g. P light. After the reflected light r64 passes through the liquid crystal material 10210TN, the polarization direction does not change, and the polarization direction of the outgoing light r65 formed is the same as that of the light r64, e.g. P light. It is not difficult to deduce that the polarization direction of the light r65 is the same as the transmission axis T of the absorbing polarizer 10210, so the light r65 is almost completely transmitted, obtaining outgoing light r66. It can be seen that the mirror module is in a high reflectivity state to external ambient light at this time. When the display module 1023 displays image light r67, the polarization direction of the outgoing light r68 passing through the reflecting polarizer 10219 is the same as the transmission axis T of the reflecting polarizer 10219, e.g. S light. After the light r68 passes through the vertically arranged liquid crystal material 10210TN, the polarization direction does not change, and it is not difficult to deduce that the polarization direction of the outgoing light r69 formed is the same as the absorption axis of the absorbing polarizer 10210, e.g. S light, so the light r69 is almost completely absorbed by the absorbing polarizer 10210. It can be seen that the mirror module is in a low transmission state to the display of the display module 1023 inside at this time.

[0215] Fourth configuration scheme

[0216] FIGS. 49G and 49H show schematic diagrams of two working states of the main structural devices of the mirror module of the fourth configuration scheme. It should be noted that the devices listed in FIGS. 49G and 49H include devices that have a major impact on the properties of the incident light and light sources and the like.

[0217] In this configuration scheme, the mirror module still adopts the TN liquid crystal cell mode, and the liquid crystal material adopted by the TN liquid crystal cell is marked as 10210TN. Different from the third configuration scheme, the absorption axis A of the absorption polarizer 10210 is arranged to be parallel to the reflection axis R of the reflection polarizer 10219, and the transmission axis T of the absorption polarizer 10210 is also arranged to be parallel to the transmission axis T of the reflection polarizer 10219.

[0218] In this way, when no voltage is applied to the liquid crystal material on both sides (V=OFF), as shown in FIG. 49G, the external ambient light r71 (usually natural light, i.e., non-polarized light) passes through the absorption polarizer 10210 and becomes linearly polarized light r72 consistent with the transmission axis direction of the absorption polarizer 10210, for example, P light. At this time, the molecular arrangement direction of the liquid crystal material 10210TN is in a twisted arrangement, and the liquid crystal material 10210TN twists the polarization direction of the incident linearly polarized light by 90 degrees and outputs it. Therefore, the polarization direction of the outgoing light r73 passing through the liquid crystal material 10210TN is perpendicular to the polarization direction of the light r72, for example, S light. Since the polarization direction of the light r73 is consistent with the reflection axis of the reflection polarizer 10219, the reflection polarizer 10219 almost completely reflects the light r73 to form reflected light r74. The polarization direction of the reflected light r74 is consistent with the polarization direction of the light r73, for example, S light. After the reflected light r74 passes through the liquid crystal material 10210TN, the polarization direction is rotated by 90 degrees, and the polarization direction of the outgoing light r75 formed is consistent with the transmission axis of the absorption polarizer 10210, for example, P light, so the light r75 is almost completely transmitted to form outgoing light r76. It can be seen that at this time, the mirror module is in a high reflectivity state to the external ambient light. When the display module 1023 displays image light r77, the polarization direction of the outgoing light r78 passing through the reflection polarizer 10219 is consistent with the transmission axis T of the reflection polarizer 10219, for example, P light. After the light r78 passes through the vertically arranged liquid crystal material 10210TN, the polarization direction is rotated by 90 degrees, and it is not difficult to deduce that the polarization direction of the outgoing light r79 formed is consistent with the absorption axis of the absorption polarizer 10210, for example, S light, so the light r79 is almost completely absorbed by the absorption polarizer 10210. It can be seen that at this time, the mirror module is in a low transmission state to the display of the display module 1023 on the inside.

[0219] When a voltage is applied to both sides of the liquid crystal material 10210TN (V = ON), as shown in FIG. 49H, the molecular arrangement direction of the liquid crystal material 10210TN is perpendicular to the first substrate and the second substrate. Ambient light r81 (usually natural light, i.e. non-polarized light) passing through the absorption polarizer 10210 becomes linearly polarized light r82 (e.g. P light) in the same direction as the transmission axis of the absorption polarizer 10210. Since the molecular arrangement direction of the liquid crystal material 10210TN is perpendicular to the first substrate and the second substrate at this time, the polarization direction of the incident light is hardly changed, so the polarization direction of the light r83 passing through the liquid crystal material 10210TN is the same as that of the light r82, e.g. P light. Since the polarization direction of the light r83 is the same as the transmission axis of the reflective polarizer 10219, the reflective polarizer 10219 almost completely transmits the light r83, forming the outgoing light r84. It can be seen that the mirror module is in a low reflectivity state with respect to the external ambient light at this time. When the display module 1023 displays image light r85, the polarization direction of the outgoing light r86 passing through the reflective polarizer 10219 is the same as the transmission axis T of the reflective polarizer 10219, e.g. P light. The polarization direction of the light r86 passing through the vertically arranged liquid crystal material 10210TN is not changed, and the polarization direction of the outgoing light r87 formed thereby is the same as that of the light r86, e.g. P light. It can be easily deduced that the polarization direction of the light r87 is the same as the transmission axis T of the absorption polarizer 10210 at this time, so the light r87 is almost completely transmitted, forming the outgoing light r88. It can be seen that the mirror module is in a high transmittance state with respect to the display of the display module 1023 inside at this time.

[0220] In summary, the above four configuration schemes are summarized in Table 1:

[0221] In the above various working states, when the mirror module has high reflectivity with respect to the external ambient light and low transmittance with respect to the internal display, it corresponds to the user's desire to clearly see the reflected external environment. Of course, in alternative embodiments, the image light display of the display module 1023 can also be turned off in this mode to further reduce the interference with the user's viewing of the external environment. When the mirror module has low reflectivity with respect to the external ambient light and high transmittance with respect to the internal display, it corresponds to the user's clear viewing of the display content, reducing the influence of the external ambient light on the display content and improving the clarity of the display.

[0222] It can be seen that by controlling whether a voltage is applied to both sides of the liquid crystal material and the magnitude of the applied voltage, the reflectivity of the mirror module 1021 with respect to the external light source (such as ambient light) and the transmittance of the mirror module 1021 with respect to the internal light source (such as the display module) can be adjusted.

[0223] In the case of adjusting the reflectivity of the light emitted by the external light source and the transmittance of the light emitted by the internal light source at the same time, when the reflectivity of the light emitted by the external light source increases, the transmittance of the light emitted by the internal light source decreases correspondingly; and when the reflectivity of the light emitted by the external light source decreases, the transmittance of the light emitted by the internal light source increases correspondingly.

[0224] One application scenario of the rearview mirror in this embodiment is an anti-dazzling rearview mirror. In this application scenario, the reflectivity and / or the transmittance of the mirror module 1021 in the rearview mirror can be manually switched by the user to realize a manual anti-dazzling switching function; or the reflectivity and / or the transmittance of the mirror module 1021 in the rearview mirror can be automatically switched according to the ambient light intensity (such as the light intensity of the vehicle lights of the vehicle behind the vehicle) to realize an automatic anti-dazzling switching function.

[0225] In addition, according to actual product needs, the optoelectronic device assembly in this embodiment preferably can also include any one or any combination of a touch layer, a photosensitive sensor, a control unit, a camera module, a jumper wire, a housing, and a support. For example, as shown in FIG. 49, the housing 104 and the support 105 can be provided.

[0226] It should be noted that the cover plate 101 in this embodiment can also be replaced by the size design in Embodiments One to Six, i.e., protruding from the edge of the mirror module 1021. Such a design helps to facilitate the assembly of the housing and the cover plate 101 and the mirror module 1021 and the like, and also makes it easier for the light-transmitting area A11 of the shielding layer 1031 to avoid the mirror module 1021 and the like behind it, so that the sensor and the like behind the light-transmitting area A11 are more convenient to set up.

[0227] Embodiment Eleven

[0228] The embodiment eleven of the present application provides an implementation scheme of applying the optoelectronic device assembly to a rearview mirror scenario. The rearview mirror does not set a separate cover plate as a support plate, but reuses a substrate in the optoelectronic device assembly as the support plate.

[0229] Specifically, referring to the exploded view of the rearview mirror in the embodiment shown in FIG. 50, the rearview mirror includes a mirror module 1022, which has the same structure as the optoelectronic device in Embodiment Nine, and shows some other detailed structures. It includes: a first substrate 10221 and a second substrate 10222', and an optoelectronic material (not shown in the figure) disposed between the first substrate 10221 and the second substrate 10222', which is surrounded by a sealing frame 10224. The sealing frame 10224 can also function to fix the first substrate 10221 and the second substrate 10222' together, and together with the first substrate 10221 and the second substrate 10222' forms a sealed cavity, sealing the optoelectronic material therein. A shielding layer 10223 is disposed on the side of the first substrate 10221 facing other components of the mirror module 1022 (i.e. the side of the first substrate 10221 facing away from the external incident light). The structure of the shielding layer 10223 is basically the same as that of the shielding layer 10223 in Embodiment Nine of the present application, and will not be described here. Of course, those skilled in the art should understand that the structure and position of the shielding layer 10223 can also use the shielding layer scheme in Embodiments Two to Six in alternative embodiments, the only difference being that the cover plate in Embodiments Two to Six is replaced by the first substrate.

[0230] In the present embodiment, the optoelectronic material can be selected as a liquid crystal material. The first substrate 10221 is closer to the external incident light than the second substrate 10222'. An absorbing polarizer 10220 is disposed on the side of the first substrate 10221 facing the external incident light, and a first conductive layer 10225 and a first alignment layer 10226 are disposed on the side of the first substrate 10221 facing the second substrate 10222', wherein the first alignment layer 10226 is closer to the liquid crystal material as the optoelectronic material, for example, the first alignment layer 10226 can be in direct contact with the liquid crystal material. The second substrate 10222' has a second conductive layer 10228 and a second alignment layer 10227 on the side facing the first substrate 10221, wherein the second alignment layer 10227 is closer to the liquid crystal material as the optoelectronic material. The second substrate 10222' has a reflective polarizer 10229 on the side facing away from the first substrate 10221.

[0231] Except for omitting a separate cover plate and multiplexing the first substrate as a support plate, the rearview mirror in the present embodiment is basically the same as the rearview mirror in Embodiment Ten, and will not be described here.

[0232] It should be noted that in the present embodiment, the positions of the shielding layer 10223 and the first conductive layer 10225 can be interchanged.

[0233] In addition, the first substrate in this embodiment can also be replaced by a size design similar to that in Embodiment Eight, i.e., protruding from the edges of other components of the mirror module 1021. Such a design helps facilitate the assembly of the housing and the mirror module 1021 and the like, and also makes it easier for the light-transmitting region A11 of the shielding layer 1031 to avoid other components of the mirror module 1021 behind it, so that the sensor and the like behind the light-transmitting region A11 are easier to set up.

[0234] The embodiments of the present application also provide a manufacturing method of an optoelectronic device assembly, as shown in FIG. 51, which comprises the following steps:

[0235] Step S5101: providing a support plate and setting a shielding layer in a non-visible region on the support plate, the shielding layer being provided with a light-transmitting region, the light-transmitting rate of the light-transmitting region of the shielding layer being greater than that of other regions of the shielding layer.

[0236] The support plate can be a separate cover plate or be multiplexed from one substrate of the optoelectronic device.

[0237] The structure of the shielding layer can adopt any one of the various embodiments in Embodiments One to Nine.

[0238] The shielding layer can be formed by a plating process and / or a printing process. The use of the printing process helps reduce manufacturing costs.

[0239] Step S5102: combining the support plate and the optoelectronic device together.

[0240] When the support plate is one substrate of the optoelectronic device, step S5102 is specifically implemented by combining the substrate and other components of the optoelectronic device together or manufacturing the optoelectronic device by taking the support plate as one substrate of the optoelectronic device (i.e., the optoelectronic device comprises at least one substrate, and one of the at least one substrate is the support plate).

[0241] When the support plate is a cover plate, step S5102 is specifically implemented by assembling the cover plate and the optoelectronic device together, which can be specifically implemented by full bonding or frame bonding.

[0242] At least part of the edges of the support plate can protrude outward from the whole optoelectronic device to form a protruding region, and the light-transmitting region of the shielding layer can be located in the protruding region.

[0243] At least part of the light-shielding material layer of the shielding layer of the support plate located in the protruding region can be formed by a printing process. This is because the thickness of the light-shielding material located in the protruding region is not limited by other components, so it can be made by a printing process with low process precision but low cost.

[0244] The preferred embodiments of the present application are described in detail above with reference to the accompanying drawings, but the present application is not limited to the specific details of the above-described embodiments, and various simple modifications can be made to the technical solutions of the present application within the technical concept of the present application, and these simple modifications all belong to the protection scope of the present application.

[0245] In addition, any combination of the various different embodiments of the present application can also be made, as long as it does not deviate from the idea of the present application, and it should also be considered as disclosed by the present application.

Claims

1. A photovoltaic device assembly comprising: A photoelectric device and a support plate are provided on the support plate. A shielding layer is provided in a non-visible area. The shielding layer has a light-transmitting area. The light transmittance of the light-transmitting area of ​​the shielding layer is greater than the light transmittance of other areas of the shielding layer.

2. The optoelectronic device assembly according to claim 1, wherein: The shielding layer is located in the edge area of ​​the supporting plate.

3. The optoelectronic device assembly according to claim 1, wherein: The support plate is a cover plate.

4. The optoelectronic device assembly according to claim 1, wherein: The optoelectronic device includes at least one substrate, and one of the at least one substrate serves as the supporting plate.

5. The optoelectronic device assembly according to claim 1, wherein: The size of the support plate is substantially consistent with the size of the optoelectronic device.

6. The optoelectronic device assembly according to claim 1, wherein: At least a portion of the edge of the support plate protrudes outward from the optoelectronic device to form a protruding area, and the light-transmitting area of ​​the shielding layer is located in the protruding area.

7. The optoelectronic device assembly according to claim 6, wherein: At least a portion of the light-shielding material layer located in the protruding area of ​​the support plate shielding layer is made by a printing process.

8. The optoelectronic device assembly according to claim 1, wherein: The light transmittance of the light-transmitting area of ​​the shielding layer is greater than the light transmittance of other areas of the shielding layer, which is specifically achieved by: the light transmittance of the material used in the light-transmitting area of ​​the shielding layer is greater than the light transmittance of the material used in other areas.

9. The optoelectronic device assembly according to claim 1, wherein: The light transmittance of the light-transmitting area of ​​the shielding layer is greater than the light transmittance of other areas of the shielding layer, which is specifically achieved by: the unit area usage of the light-shielding material provided in the light-transmitting area of ​​the shielding layer is less than the unit area usage of the light-shielding material in other areas.

10. The optoelectronic device assembly according to claim 9, wherein: The specific implementation of the shading layer using less shading material per unit area in the light-transmitting area than shading material per unit area in other areas is as follows: The number of light-shielding material layers provided in the light-transmitting area of ​​the shielding layer is less than the number of light-shielding material layers provided in other areas.

11. The optoelectronic device assembly according to claim 9, wherein: The specific implementation of the shading layer using less shading material per unit area in the light-transmitting area than shading material per unit area in other areas is as follows: The thickness of the light-shielding material layer provided in the light-transmitting area of ​​the shielding layer is smaller than the thickness of the light-shielding material layer provided in other areas.

12. The optoelectronic device assembly according to claim 1, wherein: The shielding layer includes at least one light-shielding material layer, and the light-shielding material layer includes a light-reflecting layer and / or a light-absorbing layer.

13. The optoelectronic device assembly according to claim 12, wherein: The light absorbing layer is an ink layer.

14. The optoelectronic device assembly according to claim 13, wherein: The ink layer is produced by a printing process.

15. The photovoltaic device assembly according to claim 12, wherein: The reflective layer is a partially reflective and partially transmissive layer.

16. The optoelectronic device assembly according to claim 15, wherein: The reflective layer is made by a coating or printing process.

17. The photovoltaic device assembly according to claim 12, wherein: The light absorbing layer is located on a side of the light reflecting layer away from external incident light.

18. The optoelectronic device assembly according to claim 1, wherein: The shielding layer is located on a side of the support plate facing the photoelectric device.

19. The optoelectronic device assembly according to claim 1, wherein: The shielding layer includes multiple light-shielding material layers, wherein at least one light-shielding material layer and the other light-shielding material layers are located on both sides of the support plate.

20. The photovoltaic device assembly according to claim 1, wherein The optoelectronic device includes a light modulation module with adjustable optical properties.

21. The photovoltaic device assembly according to claim 20, wherein: The optical properties include transmission, reflection, diffraction, scattering, and / or absorption.

22. The photovoltaic device assembly according to claim 20, wherein: The light modulation module includes a reflector module with adjustable reflectivity.

23. The photovoltaic device assembly according to claim 22, wherein: The light modulation module further includes a display module located on a side of the reflector module away from the support plate.

24. The optoelectronic device assembly according to claim 3, wherein: The cover plate and the optoelectronic device are combined together by full lamination or frame lamination.

25. The photovoltaic device assembly according to claim 1, wherein: The invention also includes a photosensor configured to receive light transmitted through the light-transmitting area of ​​the shielding layer.

26. The photovoltaic device assembly according to claim 1, wherein: A protective layer is provided on the support plate, and the protective layer is located on a side of the support plate away from the optoelectronic device.

27. A rearview mirror, characterized in that: The optoelectronic device assembly comprises the optoelectronic device assembly according to any one of claims 1 to 26, wherein the optoelectronic device comprises a reflector module with adjustable reflectivity.

28. The rearview mirror according to claim 27, wherein: The light transmittance of the reflector module can also be adjusted.

29. The rearview mirror according to claim 28, wherein: The optoelectronic device further includes a display module located on a side of the reflector module away from the support plate.

30. The rearview mirror according to claim 27, wherein: The support plate is a cover plate, and the cover plate and the optoelectronic device are combined together by full lamination or frame lamination.

31. The rearview mirror according to claim 27, wherein: It also includes any one or any combination of a touch layer, a light sensor, a control unit, a camera module, an adapter cable, a housing, and a bracket.

32. The rearview mirror according to claim 27, wherein: The reflector module includes a liquid crystal dimming layer.

33. The rearview mirror according to claim 32, wherein: The liquid crystal dimming layer adopts a TN type or VA type liquid crystal cell structure.

34. The rearview mirror according to claim 32, wherein: The reflector module further comprises an absorptive polarizer and a reflective polarizer located on both sides of the liquid crystal dimming layer, wherein the absorptive polarizer is located on a side of the liquid crystal cell structure facing incident light from the external environment.

35. The rearview mirror according to claim 34, wherein: The absorption axis of the absorptive polarizer and the reflection axis of the reflective polarizer are parallel or perpendicular to each other.

36. A method for manufacturing a photoelectric device assembly, characterized in that: include: Providing a support plate, and disposing a shielding layer located in the non-visible area on the support plate, wherein the shielding layer has a light-transmitting area, and the light transmittance of the light-transmitting area of ​​the shielding layer is greater than the light transmittance of other areas of the shielding layer; The support plate is combined with the optoelectronic device.

37. The method of claim 36, wherein: The shielding layer is formed by using a coating process and / or a printing process.

38. The method of claim 36, wherein: The support plate is a cover plate, and combining the support plate with the optoelectronic device is specifically achieved by assembling the cover plate and the optoelectronic device together.

39. The method of claim 37, wherein: At least a portion of the light-shielding material layer in the shielding layer is made by a printing process.

Images