Turnstile orthomode transducer based on hybrid construction of glass substrate and metal

Abstract

A radio frequency (RF) transceiver device may include an orthomode transducer (OMT) device, the OMT device including a glass substrate and a metal plate, the glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the metal plate mounted on the second metallization layer; and a radio antenna connected to the OMT device.

Description

TURNSTILE ORTHOMODE TRANSDUCER BASED ON HYBRID CONSTRUCTION OF GLASS SUBSTRATE AND METALRELATED FIELD

[0001] Various example embodiments relate to a turnstile orthomode transducer (OMT) device, radio frequency (RF) transceiver devices including the OMT device, systems including the OMT device, and / or methods of operating one or more of the above. Additionally, various example embodiments relate to a RF integrated circuit (IC) and glass substrate assembly (e.g., a RFIC glass-based package) with embedded OMT device, RF transceiver devices including the RFIC glass-based package with embedded OMT device, systems including the RFIC glass-based package with embedded OMT device, and / or methods of operating one or more of the above.BACKGROUND

[0002] Wireless networking devices, such as 5G New Radio (NR) networking devices, include radio frequency (RF) front-end passive devices to combine or separate two orthogonally polarized RF signals in order to perform frequency domain duplex (FDD) transmission / reception. One example of a RF front-end passive device is an orthomode transducer (OMT) device coupled to a radio antenna.SUMMARY

[0003] At least one example embodiment relates to a radio frequency (RF) transceiver device.

[0004] In at least one example embodiment, the RF transceiver device may include an orthomode transducer (OMT) device, the OMT device including a glass substrate and a metal plate, the glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the metal plate mounted on the second metallization layer, and a radio antenna connected to the OMT device.

[0005] Some example embodiments provide that the glass substrate and the metal plate define first to fourth substrate integrated waveguide (SIW) sections, a hybrid turnstile junction, the hybrid turnstile junction at an intersection of first ends of the first to fourth SIW sections, a first electric (E)-plane T-junction, the first E-plane T-junction including a second end of the first SIW section and a second end of the second SIW section, and asecond E-plane T-junction, the second E-plane T-junction including a second end of the third SIW section and a second end of the fourth SIW section.

[0006] Some example embodiments provide that each of the first to fourth SIW sections includes a plurality of through-glass vias (TGVs) included in the glass substrate, the plurality of TGVs defining a corresponding channel for the respective SIW section in the glass substrate.

[0007] Some example embodiments provide that a distance between each of the plurality of TGVs is 1 / 10 or less of a desired transmission / reception wavelength.

[0008] Some example embodiments provide that the hybrid turnstile junction comprises, a first tuning stub configured to transition radio frequency (RF) signals to or from the radio antenna in a transmission mode or a reception mode, respectively, and the first ends of the first to fourth SIW sections each arranged 90 degrees apart around the first tuning stub.

[0009] Some example embodiments provide that the first tuning stub is defined by, a circular-shaped set of TGVs included in the glass substrate, and a circular-shaped metallic section of the second metallization layer covering the circular-shaped set of TGVs.

[0010] Some example embodiments provide that the RF transceiver device may further include a circular waveguide defined in the metal plate, the circular waveguide having a larger surface area than the first tuning stub, and the circular waveguide covering the first tuning stub in a vertical direction.

[0011] Some example embodiments provide that the first E-plane T-junction comprises, a second tuning stub configured to transition RF signals to or from the first metallization layer and the second metallization layer in a transmission mode or a reception mode, respectively, and the second ends of the first and second SIW sections are connected to a first and second side of the second tuning stub, respectively, the first and second side of the second tuning stub being 180 degrees apart.

[0012] Some example embodiments provide that the second tuning stub is defined by, an elliptical-shaped set of TGVs included in the glass substrate, and an elliptical-shaped metallic section of the second metallization layer covering the elliptical-shaped set of TGVs.

[0013] Some example embodiments provide that the second E-plane T-junction comprises, a third tuning stub configured to transition RF signals to or from the first metallization layer and the second metallization layer in a transmission mode or areception mode, respectively, and the second ends of the third and fourth SIW sections are connected to a first and second side of the third tuning stub, respectively, the first and second side of the third tuning stub being 180 degrees apart.

[0014] Some example embodiments provide that the RF transceiver device may further include first and second rectangular waveguides defined in the metal plate, the first rectangular waveguide having a larger surface area than the second tuning stub, and the first rectangular waveguide covering the second tuning stub in a vertical direction, and the second rectangular waveguide having a larger surface area than the third tuning stub, and the second rectangular waveguide covering the third tuning stub in the vertical direction.

[0015] Some example embodiments provide that each of the third SIW section and the fourth SIW section includes an air bridge, and each of the air bridges includes a rectangular waveguide defined in the metal plate and rectangular E-field coupling apertures defined in the second metallization layer.

[0016] Some example embodiments provide that the first E-plane T-junction includes a first elliptical-shaped tuning stub configured to either divide RF signals in a transmission mode or combine the RF signals in a reception mode, and the second E-plane T-junction includes a second elliptical-shaped tuning stub configured to either divide the RF signals in a transmission mode or combine the RF signals in a reception mode.

[0017] Some example embodiments provide that the RF transceiver device may further include at least one RF integrated circuit (RFIC), and the OMT device is directly connected to the at least one RFIC via at least one interconnect.

[0018] At least one example embodiment relates to an orthomode transducer (OMT) device.

[0019] In at least one example embodiment, the OMT device may include a glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the glass substrate including a plurality of through-glass-vias (TGVs) defining at least one substrate integrated waveguide (SIW) section, and a metal plate mounted on the second metallization layer, the metal plate defining a circular waveguide.

[0020] Some example embodiments provide that the circular waveguide is connected to a radio antenna.

[0021] Some example embodiments provide that the OMT device may further include a first tuning stub configured to transition radio frequency (RF) signals to or from the radio antenna in a transmission mode or a reception mode, respectively, the first tuning stub including a circular metallic portion of the second metallization layer and a circular set of TGVs from the plurality of TGVs.

[0022] Some example embodiments provide that the metal plate further includes, first and second rectangular waveguides, the first and second rectangular waveguides formed as rectangular- shaped through-holes in the metal plate, the first and second rectangular waveguides corresponding to second and third tuning stubs, respectively, and first and second cavities on a first surface of the metal plate, the first and second cavities configured to operate as air bridges.

[0023] Some example embodiments provide that the at least one SIW section includes first to fourth SIW sections, a first end of the first SIW section and a first end of the second SIW section are connected to the second tuning stub on opposing sides of the second tuning stub, a first end of the third SIW section and a first end of the fourth SIW section are connected to the third tuning stub on opposing sides of the third tuning stub, the first rectangular waveguide overlaps the first end of the first SIW section, the first end of the second SIW section, and the second tuning stub, and the second rectangular waveguide overlaps the first end of the third SIW section, the first end of the fourth SIW section, and the third tuning stub.

[0024] Some example embodiments provide that the metal plate further includes, first and second cavities on a first surface of the metal plate, the first and second cavities configured to operate as air bridges.

[0025] Some example embodiments provide that the first and second cavities are both arcuate shaped, and each of the first and second cavities include, a central E-field coupling aperture defined in the second metallization layer, and a first end and second end E-field coupling apertures defined in the second metallization layer, the first end and second end E-field coupling apertures located at a first end and second end of the respective cavity.

[0026] Some example embodiments provide that the at least one SIW section includes fifth to tenth SIW sections, a first end of the fifth SIW section is connected to a first radio frequency integrated circuit (RFIC) via at least one first interconnect, a second end of the fifth SIW section is connected to the central E-field coupling aperture of the first cavity, the first end E-Field coupling aperture of the first cavity is connected to a first end of theeighth SIW section, the second end E-Field coupling aperture of the first cavity is connected to a first end of the seventh SIW section, a first end of the sixth SIW section is connected to a second RFIC via at least one second interconnect, a second end of the sixth SIW section is connected to the central E-field coupling aperture of the second cavity, the first end E-Field coupling aperture of the second cavity is connected to a first end of the ninth SIW section, and the second end E-Field coupling aperture of the second cavity is connected to a first end of the tenth SIW section.

[0027] Some example embodiments provide that the first cavity overlaps the ninth SIW section, and the circular waveguide is connected to a second end of the seventh SIW section, a second end of the eighth SIW section, a second end of the ninth SIW section, and a second end of the tenth SIW section.

[0028] Some example embodiments provide that the OMT device may further include a conductor-backed coplanar waveguide (CBCPW) transition defined in the first metallization layer, the CBCPW transition configured to transmit RF signals between the at least one SIW section and at least one RFIC.

[0029] Some example embodiments provide that the CBCPW transition is connected to at least one interconnect, and the at least one interconnect is connected to the at least one RFIC.

[0030] At least one example embodiment relates to a network node.

[0031] In at least one example embodiment, the network node may include at least one RF integrated circuit (RFIC) configured to transmit or receive radio frequency (RF) signals, and an orthomode transducer (OMT) device, the OMT device including a glass substrate and a metal plate, the glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the metal plate mounted on the second metallization layer, the OMT device connected to a radio antenna, the OMT device configured to, forward the RF signals from the at least one RFIC to the radio antenna, or forward the RF signals from the radio antenna to the at least one RFIC.

[0032] Some example embodiments provide that the network node may further include a conductor-backed coplanar waveguide (CBCPW) transition defined in the first metallization layer, the CBCPW transition configured to transmit the RF signals between at least one substrate integrated waveguide (SIW) section included in the glass substrate and the at least one RFIC.

[0033] Some example embodiments provide that the CBCPW transition is connected to at least one interconnect, and the at least one interconnect is connected to the at least one RFIC.

[0034] Some example embodiments provide that the network node is a point-to-point wireless backhaul network node.

[0035] Some example embodiments provide that the OMT device is configured to transmit and receive RF signals between 30 GHz to 300 GHz.

[0036] At least one example embodiment relates to a network node.

[0037] In at least one example embodiment, the network node may include means for, transmitting or receiving radio frequency (RF) signals, forwarding the RF signals from at least one RFIC to a radio antenna, or forwarding the RF signals from the radio antenna to at least one RFIC.

[0038] Some example embodiments provide that the network node may further include means for transmitting the RF signals between at least one substrate integrated waveguide (SIW) section and the at least one RFIC.

[0039] Some example embodiments provide that the network node is a point-to-point wireless backhaul network node.

[0040] Some example embodiments provide that the network node may further include means for transmitting and receiving RF signals between 30 GHz to 300 GHz.BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate one or more example embodiments and, together with the description, explain these example embodiments. In the drawings:

[0042] FIG. 1 illustrates a block diagram of an example network node including an OMT according to at least one example embodiment;

[0043] FIG. 2A illustrates a theoretical diagram of a first example OMT according to at least one example embodiment;

[0044] FIG. 2B illustrates a three-dimensional (3D) view of the first example OMT according to some example embodiments;

[0045] FIG. 2C illustrates a two-dimensional (2D) view of an example glass substrate design of the first example OMT of FIG. 2B according to some example embodiments;

[0046] FIG. 2D illustrates views of an example air bridge of the first example OMT of FIG. 2B according to some example embodiments;

[0047] FIGS. 3 A to 3C are example views of the glass substrate of the first example OMT according to some example embodiments;

[0048] FIGS. 4A to 4B are example views of the metal plate of the first example OMT according to some example embodiments;

[0049] FIG. 5A is a block diagram of an example network node including an example RFIC and glass substrate assembly (e.g., a RFIC glass-based package) with embedded OMT device according to some example embodiments;

[0050] FIG. 5B is an example 2D cross-sectional view of the RFIC glass-based package according to some example embodiments;

[0051] FIG. 5C is a 3D perspective view of the RFIC interconnect details onto the glass substrate according to some example embodiments;

[0052] FIG. 5D is a top view of an example conductor-backed coplanar waveguide (CBCPW) to substrate integrated waveguide (SIW) transition on the glass substrate according to some example embodiments;

[0053] FIG. 6A illustrates a 3D view of a second example OMT device according to some example embodiments;

[0054] FIG. 6B illustrates a 2D view of an example glass substrate and metal plate design of the second example OMT device of FIG. 6A according to some example embodiments;

[0055] FIGS. 7A to 7B are example views of the glass substrate of the second example OMT device according to some example embodiments; and

[0056] FIGS. 8A to 8B are example views of the metal plate of the second example OMT device according to some example embodiments.DETAILED DESCRIPTION

[0057] Various example embodiments will now be described more fully with reference to the accompanying drawings in which some example embodiments are illustrated.

[0058] Various example embodiments are directed towards a turnstile orthomode transducer (OMT) device, radio frequency (RF) transceiver devices including the OMT device, networking systems including the OMT device, and / or methods of operating one or more of the above. Additionally, various example embodiments relate to a RFintegrated circuit (1C) and glass substrate assembly (e.g., a RF1C glass-based package) with embedded OMT device, RF transceiver devices including the RFIC glass-based package with embedded OMT device, systems including the RFIC glass-based package with embedded OMT device, and / or methods of operating one or more of the above.

[0059] Conventional OMT devices are used as RF front-end passive devices in wireless devices operating in frequency ranges below 30 GHz. However, the conventional OMT devices are manufactured using computer numerical control (CNC) metal machining or employ printed circuit board (PCB) technology, which are unsuitable for constructing OMT devices for higher frequency ranges, such as millimeter- wave radio frequency spectrum (e.g., 30 GHz to 300 GHz) and above, which are desired for 5G New Radio (NR) wireless devices, future 6G wireless devices, etc., due to smaller feature sizes desired and / or required for these higher frequency ranges.

[0060] While proposals have been made for the construction of OMT devices for frequency ranges 30 GHz and above, such construction methods require advanced fabrication techniques, such as additive multilayer manufacturing, ultra-precise CNC machining or silicon micromachining, which lead to increased costs, longer manufacturing time, are difficult to mass produce, and / or are cost prohibitive to mass produce at this time.

[0061] According to at least one example embodiment, an OMT device for frequency ranges of 30 GHz and above may have a hybrid construction of a glass substrate and a metal plate, which may provide better RF performance, may be simpler, cheaper, and / or more reliable to manufacture than OMT devices manufactured using alternative fabrication techniques. According to at least one example embodiment, the OMT device may be tuned to operate within the millimeter-wave radio frequency spectrum (e.g., 30 GHz to 300 GHz). According to at least one example embodiment, the OMT device may be tuned to operate within the E-band (e.g., 71 GHz to 86 GHz) frequency range. According to at least one example embodiment, the OMT device may be tuned to operate within the D-band (e.g., 110 GHz to 170 GHz) frequency range. According to at least one example embodiment, an RFIC and glass substrate assembly may include the OMT device and may include interconnections for mounting, installing, including, embedding, etc., an RF integrated circuit directly onto the glass substrate with an embedded OMT device (e.g., an OMT interposer, etc.), thereby decreasing manufacturing costs and / orimproving RF performance, etc. According to at least one example embodiment the OMT device may be included in a point-to-point wireless backhaul network node.

[0062] FIG. 1 illustrates a block diagram of an example network node 100 including an OMT according to at least one example embodiment. According to at least one example embodiment, the network node 100 may be a point-to-point backhaul network node for a 5G wireless network, a 6G wireless network, etc., capable of transmitting and / or receiving wireless signals with frequency ranges between one or more of, for example, the E-band radio frequency (RF) spectrum (e.g., 71 GHz to 86 GHz), the W-band RF spectrum (e.g., 75 GHz to 110 GHz), the F-band RF spectrum (e.g., 90 GHz to 140 GHz), the D-band RF spectrum (e.g., 110 GHz to 170 GHz), the entire millimeter-wave RF spectrum (e.g., 30 GHz to 300 GHz), etc., but the example embodiments are not limited thereto, and the network node 100 may transmit and / or receive RF signals (and / or electromagnetic waves) of other frequency ranges. As shown in FIG. 1, the network node 100 may be a full- duplex network node and may include at least one modem 110, a first transmi tter / receiver (e.g., first transceiver) 120A, a second transmitter / receiver (e.g., second transceiver) 120B, a first diplexer 130A, and a second diplexer 130B, etc. The network node 100 may further include a turnstile orthomode transducer (OMT) device 200, and a radio antenna 140, but the example embodiments are not limited thereto, and for example, the network node 100 may include a greater or lesser number of constituent components, such as at least one processor (not shown), memory (not shown), etc.

[0063] According to at least one example embodiment, when the network node 100 is in a transmission mode (e.g., is transmitting data), the at least one modem 110 may receive data (e.g., digital data) from at least one processor (not shown) to be transmitted by the network node 100 and convert the data into an analog electrical signal. The at least one modem 110 may transmit the analog electrical signal to, for example, the transceiver 120A, and the transceiver 120A may generate an RF signal of a desired radio frequency and / or radio spectrum based on the analog electrical signal. The transceiver 120A may transmit RF signal to the diplexer 130 A. For example, the diplexer 130A may multiplex the two RF signals operating at different frequencies and / or different frequency bands (e.g., different RF channels, etc.), but the example embodiments are not limited thereto. Additionally, according to some example embodiments, the diplexer 130A and / or diplexer BOB may be omitted from the network node 100, or may be replaced with filters, etc.

[0064] The OMT device 200 may combine the two input RF signals to be transmitted, such that the two resulting RF signals are orthogonally polarized (e.g., a first RF signal may be horizontally polarized and a second RF signal may be vertically polarized, etc.) with respect to each other in a common transmission line medium, such as circular waveguide, a square waveguide, a rectangular waveguide, an elliptical waveguide, etc. The polarized RF signals are then outputted by the OMT device 200 to the radio antenna 140 for transmission to a desired external device (e.g., a destination network node, a destination user device, etc.). The OMT device 200 will be discussed in further detail in connection with FIGS. 2A to 4B below.

[0065] According to some example embodiments, the network node 100 may also receive wireless data as well. When the network node 100 is in a reception mode (e.g., is receiving data), the radio antenna 140 may receive one or more wireless signals from an external device (e.g., a source network node, a source user device, etc.), and may output the one or more RF signals to the OMT device 200. For example, the received signals may be two orthogonally-polarized wireless signals in a desired frequency range, but are not limited thereto. In the event that two wireless signals have been received by the antenna 140, the OMT device 200 may separate the two orthogonally -polarized RF signals and pass them to a diplexer, such as the diplexer 130B, but is not limited thereto. The diplexer 130B may pass the RF signal through to the transceiver 120B. The transceiver 120B may convert the RF signal into an analog electrical signal and output the analog electrical signal to the at least one modem 110. The at least one modem 110 may convert the analog electrical signal into digital data and output the digital data to, for example, a processor, CPU, etc., but the example embodiments are not limited thereto.

[0066] According to some example embodiments, one or more of the modem 110, the first transceiver 120 A and / or second transceiver 120B, etc., may be implemented as processing circuitry, and may include hardware including logic circuits; a hardware / software combination such as a processor executing software and / or firmware; or a combination thereof. For example, the processing circuitry more specifically may further include, but is not limited to, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a System-on-Chip (SoC), a programmable logic unit, a microprocessor, application-specific integrated circuit (ASIC), etc., but is not limited thereto. Moreover, the processing circuitry, e.g., the modem 110, the first transceiver 120A and / or second transceiver 120B, etc., may bepackaged in one or more semiconductor integrated circuits, e.g., at least one RF1C, but is not limited thereto. Additional discussion of the RFIC will be made in connection with FIGS. 5 A to 8B below.

[0067] While certain components of a network node are illustrated as being part of the network node of FIG. 1, the example embodiments are not limited thereto, and the network node may include components other than those illustrated in FIG. 1.

[0068] FIG. 2A illustrates a theoretical diagram of a first example OMT according to at least one example embodiment. FIG. 2B illustrates a three-dimensional (3D) view of the first example OMT according to some example embodiments. FIG. 2C illustrates a two- dimensional (2D) view of an example glass substrate design of the first example OMT of FIG. 2B according to some example embodiments. FIG. 2D illustrates views of an example air bridge of the first example OMT of FIG. 2B according to some example embodiments.

[0069] Referring to FIGS. 2 A to 2D, an OMT device 200 may be constructed from a glass substrate 201 having a first metallization layer 203 (e.g., a top metallization layer, etc.) and a second metallization layer 202 (e.g., a bottom metallization layer, etc.). The glass substrate 201 may be connected to (e.g., mounted on, attached to, bonded on, etc.) a metal plate 205, and more specifically, the metal plate 205 may be connected to the second metallization layer 202 as shown in FIG. 2B, but the example embodiments are not limited thereto. According to some example embodiments the glass substrate 201 may have a thickness of approximately 0.70 mm and the metal plate 205 may have a thickness of approximately 2 mm, but the example embodiments are not limited thereto, and for example, the dimensions of the glass substrate 201 and / or the metal plate 205 may be changed based on the desired frequency band(s) to be supported by the OMT device 200 and / or for manufacturing considerations. According to some example embodiments, the metal plate 205 may be manufactured from metal and / or metal alloy, such as aluminum, brass, copper, etc.

[0070] According to some example embodiments, the OMT device 200 may be a turnstile OMT device in the millimeter-wave frequency band (e.g., 30 GHz to 300 GHz), but is not limited thereto, and for example may be a turnstile OMT device for frequency bands above 300 GHz or below 30 GHz. As shown in FIG. 2A, the OMT device 200 may be a 5-terminal network, wherein four of the terminals (e.g., ports) correspond to first to fourth substrate integrated waveguide (SIW) sections (also referred to as SIWs, etc.) SIW#1 toS1W#4 formed in the glass substrate 201, but the example embodiments are not limited thereto. The perimeter of each of the SIW sections may be defined by and / or formed by a plurality of through-glass vias (TGVs) formed in the glass substrate 201 as shown in FIG. 2C, but the example embodiments are not limited thereto. According to at least one example embodiment, the width of each of the SIW sections may vary based on the frequency range supported by the OMT device 200. For example, if the OMT device 200 is configured to transmit E-band (e.g., 71 GHz to 86 GHz) frequencies, the SIW sections may have a width of, e.g., approximately 2.5 mm to 2.8 mm, but the example embodiments are not limited thereto, and the dimensions of the SIW sections may change to accommodate other frequency ranges and / or based on manufacturing considerations. Additionally, the distance between each of the TGVs may be 1 / 10 or less of the wavelength of a desired RF signal (e.g., 1 / 10 of the wavelength of a 30 GHz signal, etc.) in order to reduce and / or prevent signal leakage of the desired RF signal, but the example embodiments are not limited thereto. The fifth terminal (e.g., fifth port) of the OMT device 200 may be a circular waveguide 260 formed in the metal plate 205, but is not limited thereto, and for example, may be a square or other shapes. According to some example embodiments, the circular waveguide 260 is a cylindrical-shaped through-hole formed in the metal plate 205, and may be CNC machined in the metal plate 205, but is not limited thereto.

[0071] As shown in FIG. 2A, the circular waveguide 260 may be connected to a radio antenna, such as the radio antenna 140 of FIG. 1 , e.g., a high gain radio antenna, and may transmit and / or receive (e.g., output and / or input) radio frequency (RF) signals to / from the radio antenna. For example, the circular waveguide 260 may receive a first RF signal, e.g., signal 1, and transmit a second RF signal, e.g., signal 2, which are orthogonal to each other, e.g., have polarizations that are 90 degrees to each other, but the example embodiments are not limited thereto. Further, the OMT 200 may include a first rectangular waveguide with radial comers (hereinafter referred to as rectangular waveguides) 240 and a second rectangular waveguide 250 which each may receive and / or transmit RF signals to the transceiver 120B of FIG. 1 via the first metallization layer 203, but is not limited thereto.

[0072] Referring now to FIGS. 2B and 2C, when the OMT device 200 is physically manufactured, the 5-terminal network may be converted into a 3-terminal (e.g., a 3-port) network including a first hybrid electric (E)-plane T-junction, a second hybrid E-plane T-junction, and a hybrid turnstile junction, but is not limited thereto. The first hybrid E- plane T-junction may correspond to (and / or may be formed from) the first rectangular waveguide 240 (e.g., a first terminal and / or a first port) and a first elliptical- shaped tuning stub 220 (e.g., an elliptical tuning stub, an oval tuning stub, etc.), a second hybrid E-plane T-junction may correspond to (and / or may be formed from) the second rectangular waveguide 250 (e.g., a second terminal and / or a second port) and a second ellipticalshaped tuning stub 230. According to some example embodiments, the first rectangular waveguide 240 and / or the second rectangular waveguide 250 may be connected to a first RF integrated circuit (RFIC) (not shown) and / or a second RFIC (not shown) via at least one first interconnect and / or at least one second interconnect, respectively, but the example embodiments are not limited thereto. The first RFIC and / or the second RFIC may be implemented as processing circuitry and may include, for example, the modem 110, the transceivers 120A and / or 120B, the diplexers 130A and / or 130B, etc. of FIG. 1, but are not limited thereto. The elliptical- shaped tuning stubs 220 and 230 may each be formed from and / or may include elliptical-shaped metallic sections 221 and 231 , respectively, which are formed from the bottom metallic layer 202, and elliptical-shaped sets of through-glass vias (TGVs) 222 and 232, respectively, the TGVs formed in and / or included in the glass substrate 201. The elliptical-shaped tuning stubs 220 and / or 230 are configured to improve the matching of the radio frequencies into and / or out of the corresponding T-junction by reducing a reflection coefficient of the terminals (e.g., ports) of the corresponding T-junction. While the waveguides, SIWs, and / or tuning stubs are shown and discussed as implementing certain shapes for the sake of clarity and brevity, the example embodiments are not limited thereto, and the geometries (e.g., shape and / or sizes) of the waveguides, SIWs, and / or tuning stubs may be changed and / or modified based on, for example, a desired frequency band to be supported by the OMT device 200 and / or for manufacturing considerations, etc. According to some example embodiments the distance between the TGVs may be 1 / 10 or less of the wavelength of a desired RF signal (e.g., 1 / 10 of the wavelength of a 30GHz signal, etc.) in order to reduce and / or prevent signal leakage of the desired RF signal, but the example embodiments are not limited thereto.

[0073] The OMT device 200 may further include two hybrid rectangular waveguide air bridges 270 and 280 which remedy (and / or circumvent) the intersection of the first signal and the second signal shown in FIG. 2A, by having the two signals transmit through twodifferent layers of the OMT device 200, e.g., the glass substrate 201 and air contained in a cavity inside the metal plate 205. The air bridges 270 and 280 will be discussed in greater detail in connection with FIG. 2D.

[0074] Additionally, as shown in FIG. 2C, the first hybrid E-plane T-junction may further include the first SIW section SIW#1, the second SIW section SIW #2, and the tuning stub 220. Or in other words, the first hybrid E-plane T-junction refers to the T-junction where a first end of the first SIW section SIW #1 meets a first side of the tuning stub 220 and a first end of the second SIW section SIW #2 meets the opposite side of the tuning stub 220.

[0075] According to at least one example embodiment, when the OMT device 200 is in a transmission mode (e.g., the OMT device 200 transmits RF signals), a tuning stub, such as the tuning stub 220 may divide (and / or assist in dividing, splitting, redirecting, etc.) an incoming RF signal transmitted through the corresponding rectangular waveguide, e.g., rectangular waveguide 240, etc., into two half-power (e.g., 3 dB lower, etc.) signals, such that the two resulting RF signals are 180 degrees out of phase with respect to each other. Next, the tuning stub 220 may transition the two RF signals such that the two RF signals are guided, transmitted, and / or otherwise propagated through the corresponding SIWs, e.g., SIW #1 or SIW #2 for tuning stub 220, to a circular tuning stub 210 for guidance to, propagation to, and / or transmission to the radio antenna (e.g., radio antenna 140 of FIG. 1) connected to the circular waveguide 260 (e.g., a third terminal and / or a third port), but the example embodiments are not limited thereto. According to some example embodiments, for an E-band OMT device, the distance between the center of the tuning stub 210 and the center of the tuning stub 220 may be approximately 7.06 mm and the distance between the center of the tuning stub 210 and the center of the tuning stub 230 may be approximately 7.68 mm, but the example embodiments are not limited thereto.

[0076] The circular tuning stub 210 may be formed from and / or may include a circularshaped metallic section 211 which is formed from the bottom metallic layer 202, and a circular-shaped set of TGVs 212, wherein the TGVs 212 are formed in and / or included in the glass substrate 201. The circular-shaped tuning stub 210 is configured to improve the matching of the radio frequencies into and / or out of the circular waveguide 260 by reducing the reflection coefficient of the terminal (e.g., port) of the circular waveguide 260. The shapes and dimensions of the circular waveguide 20, the circular tuning stub 210, the circular-shaped metallic section 21 1, and / or the circular- shaped set of TGVs 212may be selected, changed, and / or modified based on, for example, a desired frequency band to be supported by the OMT device 200 and / or for manufacturing considerations, etc.

[0077] According to at least one example embodiment, the second hybrid E-plane T- junction may further include the third SIW section SIW #3, the fourth SIW section SIW #4, the tuning stub 230, and air bridges 270 and 280, but is not limited thereto. As shown in FIG. 2C, when the OMT device 200 is in a transmission mode, the tuning stub 230 may divide, separate, and / or split an incoming RF signal transmitted through the corresponding rectangular waveguide for the tuning stub 230, e.g., rectangular waveguide 250, into two half-power (e.g., 3 dB lower, etc.) signals, such that the two resulting RF signals are 180 degrees out of phase with respect to each other. The two RF signals may then be transitioned (e.g., guided, transmitted and / or otherwise propagated) through the corresponding SIWs, e.g., SIW #3 or SIW #4 to the tuning stub 210 for combination (e.g., recombination, etc.) and transmission to the radio antenna (e.g., radio antenna 140) through the circular waveguide 260, but the example embodiments are not limited thereto. However, in contrast to the first hybrid E-plane T-junction, the half-power and 180 degrees out of phase RF signals pass through either air bridge 270 included in the third SIW section SIW #3 and / or air bridge 280 included in the fourth SIW section SIW #4 so that the RF signal passing through the SIW #4 does not interfere with (e.g., intersect with) the RF signal passing through the SIW #1 as shown in FIG. 2C, but the example embodiments are not limited thereto.

[0078] Additionally, when the OMT device 200 is in a reception mode, (e.g., the OMT device 200 receives RF signals), up to two orthogonally-polarized RF signals may be received through the radio antenna 140 and guided and / or propagated to the circular waveguide 260 and the tuning stub 210, wherein the tuning stub 210 may guide and divide (e.g., split, separate, etc.) each of the two orthogonal RF signals into two pairs of halfpower RF signals (e.g., 3 dB lower and 180 degrees out of phase, etc.), before one pair of RF signals is transitioned (e.g., guided and / or propagated) to the second end of the first SIW section SIW #1 and the second end of the second SIW section SIW #2, before being guided and combined (e.g., recombined, etc.) by the tuning stub 220, and the other pair of RF signals is transitioned (e.g., guided and / or propagated) to the second end of the third SIW Section SIW #3 and the second end of the fourth SIW section SIW #4 via the air bridges 270 and 280, respectively, before being guided and combined (e.g.,recombined, etc.) by the tuning stub 230, etc. According to some example embodiments, the OMT device 200 may be in a transmission mode and a reception mode simultaneously.

[0079] According to some example embodiments, the hybrid turnstile junction may correspond to (and / or may be formed at) the intersection where the ends of the first to fourth SIW sections SIW #1 to SIW #4 converge at the tuning stub 210. As shown in FIG. 2C, the first to fourth SIW sections SIW #1 to SIW #4 may have a cross configuration, e.g., may be arranged 90 degrees from each other, around the tuning stub 210, but the example embodiments are not limited thereto.

[0080] Now referring to FIG. 2D, while FIG. 2D illustrates a single air bridge 270, the example embodiments are not limited thereto and the following discussion is equally applicable to any other air bridge included in the OMT device 200, such as the second air bridge 280, etc. According to at least one example embodiment, the air bridge 270 may be a controlled-depth cavity (e.g., air cavity) within a surface (e.g., the top surface) of the metal plate 205. For example, the air bridge 270 may have a depth of, e.g., less than 0.2 mm, and therefore does not penetrate completely through the metal plate 205, in contrast to the waveguides 240, 250, and 260, but the example embodiments are not limited thereto, and for example, the air bridge 270 may have a different depth. According to some example embodiments, the air bridge 270 may have a rectangular shape and / or a substantially rectangular shape wherein two or more opposing sides may be straight and parallel to each other, while the other two opposing sides are parallel to each other but are irregularly shaped (e.g., radially shaped, etc.), but is not limited thereto, and for example, the air bridge 270 may have a different depth, width, and / or distance and / or may have different shapes based on, e.g., the desired frequency band supported by the OMT device 200 and / or for manufacturing considerations, etc. As shown in FIG. 2D, the air bridge 270 may include at least two rectangular E-field coupling apertures 271 and 272. The E-field coupling apertures 271 and 272 may be openings (e.g., slots, etc.) etched and / or otherwise created in the bottom-side metallization 202 of the glass substrate 201, and the E-field coupling apertures 271 and 272 may allow for electromagnetic waves to couple in and / or out of the air bridge 270 and the corresponding SIW section, e.g., SIW #3. According to some example embodiments, the E-field coupling apertures 271 and 272 may have a length of, e.g., approximately 2.3 mm and a width of approximately 0.40 mm and a distance between the center of the E-field coupling aperture 271 and the centerof the E-field coupling aperture 272 of approximately 3.36 mm for an E-band OMT device, but the example embodiments are not limited thereto.

[0081] FIGS. 3 A to 3C are example views of the glass substrate (e.g., glass chip, etc.) of the first example OMT according to some example embodiments, and FIGS. 4A to 4B are example views of the metal plate of the first example OMT according to some example embodiments.

[0082] FIG. 3 A illustrates a 3D view of the glass substrate 201 of the first example OMT device 200 according to at least one example embodiment, a view of the bottom of the glass substrate 201 and the bottom metallization layer 202, and a view of the top of the glass substrate and the top metallization layer 203, but the example embodiments are not limited thereto. More specifically, as shown in FIG. 3A, the top metallization layer 203 is a solid metallization layer with no openings to the glass substrate 201. In contrast, the bottom metallization layer 202 may include a plurality of openings corresponding to, for example, the circular waveguide 260, the rectangular waveguides 240 and 250, and the rectangular E-field coupling apertures 271 , 272, 281 , and 282, such that the glass substrate 201 is exposed in order to transmit and / or receive RF signals through one or more of the openings, but the example embodiments are not limited thereto. Moreover, the bottom metallization layer 202 may be etched such that tuning stubs 211 , 221 , and 231 are formed from the material of the bottom metallization layer 202 inside of the openings for the circular waveguide 260 and the rectangular waveguides 240 and 250, respectively. The top metallization layer 203 and / or the bottom metallization layer 202 may include and / or may be formed from any type of metal and / or metal alloy, including aluminum, copper, etc.

[0083] FIG. 3B illustrates a top view of the glass substrate 201 only (e.g., omitting the two metallization layers 202 and 203). FIG. 3C illustrates a cross section of the glass substrate 201 , the top metallization layer 203 and the bottom metallization layer 202. As shown in FIG. 3B, the perimeters of the first to fourth SIW sections SIW #1 to SIW #4 and the tuning stubs 211, 221, and 231 may be formed and / or defined by a plurality of TGVs, and as shown in FIG. 3C, each of the TGVs may penetrate completely through the glass substrate 201 such that electrical component of RF signals may be transmitted between the top and bottom metallization layers 203 and 202.

[0084] FIG. 4 A illustrates a 3D view of the metal plate 205, a top view of the metal plate 205, and a bottom view of the metal plate 205. FIG. 4B illustrates a cross section viewof the metal plate 205 taken along line 1-11 of the 3D view of the metal plate 205 of FIG. 4A.

[0085] As shown in FIG. 4A, the circular waveguide 260, the rectangular waveguides 240 and 250, and the air bridges 270 and 280 may be formed in and / or included in the metal plate 205, but the example embodiments are not limited thereto. Further, the circular waveguide 260 and the rectangular waveguides 240 and 250 may be formed using and / or defined by through-holes (see FIG. 4B) which penetrate through the entirety of the metal plate 205. In contrast, the air bridges 270 and 280 may be defined by and / or formed from controlled-depth cavities (e.g., air cavities) formed on, for example, the top surface of the metal plate 205, which is the surface of the metal plate 205 which is in contact with the bottom metallization layer 202 of the glass substrate 201, but the example embodiments are not limited thereto. The through-holes and / or the controlled-depth air cavities may be formed by, for example, CNC machining, but the example embodiments are not limited thereto.

[0086] FIG. 5A is a block diagram of an example network node including an example RFIC and glass substrate assembly with an embedded OMT device according to some example embodiments. FIG. 5B is an example 2D cross-sectional view of the glass substrate and RFIC according to some example embodiments. FIG. 5C is a 3D perspective view of the glass substrate and RFIC of FIG. 5 A according to some example embodiments. FIG. 5D is a top view of an example transition to / from a conductor-backed coplanar waveguide (CBCPW) transmission line to / from a substrate integration waveguide (SIW) transmission line on the glass substrate according to some example embodiments.

[0087] Referring now to FIG. 5 A, and similar to the network node 100 of FIG. 1, a network node 500 may include a modem 110, a first transceiver 120A, and / or a second transceiver 120B, but is not limited thereto. According to some example embodiments, the modem 110, first transceiver 120A, and / or the second transceiver 120B (e.g., the processing circuitry) may be included in the same semiconductor package, such as an RF integrated circuit (RFIC) 510, but the example embodiments are not limited thereto, and for example, the second transceiver 120B and a second modem (not shown) may be included in a separate RFIC package (e.g., second RFIC package). As shown in FIG. 5B, a glass substrate assembly 200A of the network node 500 may include at least one interconnect 530, e.g., at least one solder ball, at least one through-silicon-via (TSV), etc.,and the RF1C 510 may be physically and electrically connected to (e.g., mounted on, attached to, bonded to, etc.) to the glass substrate 200A via a RFIC top metal layer 520 mounted on the at least one interconnect 530, but the example embodiments are not limited thereto. The interconnect 530 may be connected to the first metallization layer 203 (e.g., a top metallization layer, etc.) of the glass substrate 200A. In other words, the RFIC 510 may be directly mounted to and / or connected to the glass substrate with an embedded OMT device 200A (e.g., an OMT interposer, etc.).

[0088] The OMT device portion of the glass substrate 200A, similar to the first example OMT device 200 of FIGS. 2A to 4B, may further include a glass substrate 201 containing a first metallization layer 203 (e.g., a top metallization layer, a top-side metallization layer, etc.), and a second metallization layer 202 (e.g., a bottom metallization layer, a bottom-side metallization layer, etc.). Further, a plurality of TGVs may penetrate the glass substrate 201 to electrically connect the first metallization layer 203 with the second metallization layer 202. Additionally, the second metallization layer 202 may be mounted on the metal plate 205. The design and functionality of the OMT device 200A may be the same as and / or similar to the first example OMT device 200 of FIGS. 2 A to 4B or the second example OMT device 550 to be discussed in connection with FIGS. 6A to 8B, but the example embodiments are not limited thereto. The network node 500 may further include a radio antenna 140 connected to the OMT device 200 A, but the example embodiments are not limited thereto, and for example, the network node 500 may include a greater or lesser number of constituent components, such as at least one processor (not shown), memory (not shown), etc.

[0089] In contrast to the network node 100 of FIG. 1, the network node 500 may omit the first diplexer 130A and / or the second diplexer 130B included in network node 100, but the example embodiments are not limited thereto, and for example, one or more diplexers may be included in the RFIC 510 and / or the network node 500.

[0090] Similar to the network node 100, the network node 500 may be a point-to-point backhaul network node for a 5G wireless network, a 6G wireless network, etc., and configured to transmit and / or receive wireless signals with frequency ranges between one or more of, for example, the E-band radio frequency (RF) spectrum (e.g., 71 GHz to 86 GHz), the W band RF spectrum (e.g., 75 GHz to 110 GHz), the F band RF spectrum (e.g., 90 GHz to 140 GHz), the D band RF spectrum (e.g., 110 GHz to 170 GHz), the entire millimeter-wave RF spectrum (e.g., 30 GHz to 300 GHz), etc., but is not limited thereto.

[0091] Referring now to FIGS. 5C and 5D, the glass substrate may further include a conductor-backed coplanar waveguide (CBCPW) transition 540 included in (and / or defined in, etched in) the first metallization layer 203. According to some example embodiments, the CBCPW transition 540 may transmit, propagate, and / or guide RF signals between the RFIC 510 and the OMT device portion of the glass substrate, or in other words, the CBCPW transition 540 may transmit RF signals between the RFIC 510 and at least one SIW section of the OMT device, etc. The transition 540 may include at least one SIW transmission line 541, a plurality of three-step linearly tapered metal strips 542, and / or a CBCPW transmission line 543 which connects to the RFIC 510 through an interconnect 530. According to at least one example embodiment, the three-step linearly tapered metal strips 542 configured to transmit / receive RF signals in the D-band frequency range (e.g., 110 GHz to 170 GHz) may have the dimensions shown in FIG. 5D. However, the example embodiments are not limited thereto and the dimensions of the three-step linearly tapered metal strips 542 may be modified based on the frequency range(s) to be supported and / or based on manufacturing considerations, such as the E- band frequency range, etc.

[0092] While certain components of a network node are illustrated as being part of the network node of FIGS. 5A to 5D, the example embodiments are not limited thereto, and the network node may include components other than those illustrated in FIGS. 5A to 5D.

[0093] FIG. 6A illustrates a 3D view of a second example OMT device according to some example embodiments. FIG. 6B illustrates a 2D view of the OMT device according to some example embodiments.

[0094] According to at least one example embodiment, and similar to the OMT device 200 of FIG. 2B, the OMT device 550 may be a turnstile OMT device supporting the millimeter-wave frequency band (e.g., 30 GHz to 300 GHz), but is not limited thereto, and for example may be a turnstile OMT device for frequency bands above 300 GHz or below 30 GHz. As shown in FIG. 6B, the OMT device 550 may include a 5-terminal network, wherein four of the terminals (e.g., ports) correspond to SIW sections SIW#7, SIW#8, SIW#9, and SIW#10 are formed in the glass substrate 201, but the example embodiments are not limited thereto. As shown in FIG. 6B, the SIW#5 and the SIW#6 may be connected to first and second RFIC 510A and 510B, respectively, and therefore may transmit RF signals to and / or receive RF signals from the RFIC 510A and / or the RFIC 510B via CBCPW-to-SIW transitions 543 A and 543B, respectively. The OMTdevice 550 may further include a hybrid turnstile junction which may correspond to (and / or may be formed at) the intersection where the second ends of the SIW sections SIW#7, SIW#8, SIW#9, and SIW #10 converge at the tuning stub 561. As shown in FIG. 6B, the seventh to tenth SIW sections SIW #7 to SIW #10 may have a cross configuration, e.g., may be arranged 90 degrees from each other, around the tuning stub 561, but the example embodiments are not limited thereto.

[0095] Similar to the OMT device 200, the perimeter of each of the SIW sections may be defined by and / or formed by a plurality of through-glass vias (TGVs) formed in the glass substrate 201 as shown in FIG. 6C, but the example embodiments are not limited thereto. According to at least one example embodiment, the width of each of the SIW sections may vary based on the frequency range supported by the OMT device 550. For example, if the OMT device 550 is configured to transmit D-band (e.g., 110 GHz to 170 GHz) frequencies, the SIW sections may have a width of, e.g., approximately 1.25 mm, but the example embodiments are not limited thereto, and the dimensions of the SIW sections may change to accommodate other frequency ranges and / or based on manufacturing considerations. Additionally, the distance between each of the TGVs may be 1 / 10 or less of the wavelength of a desired RF signal (e.g., 1 / 10 of the wavelength of a 110 GHz signal, etc.) in order to reduce and / or prevent signal leakage of the desired RF signal, but the example embodiments are not limited thereto.

[0096] According to at least one example embodiment, the fifth terminal (e.g., fifth port) of the OMT device 550 may be a circular waveguide 560 formed in the metal plate 205, but is not limited thereto, and for example, may be a square or other shapes. According to some example embodiments, the circular waveguide 560 is a cylindrical- shaped through-hole formed in the metal plate 205, and may be CNC machined in the metal plate 205, but is not limited thereto. The circular waveguide 560 may be connected to a radio antenna, such as the radio antenna 140 of FIGS. 1 or 5A, e.g., a high gain radio antenna, and may transmit and / or receive (e.g., output and / or input) radio frequency (RF) signals to / from the radio antenna. For example, the circular waveguide 560 may receive a first RF signal, e.g., signal 1, and transmit a second RF signal, e.g., signal 2, which are orthogonal to each other, e.g., have polarizations that are 90 degrees from each other, but the example embodiments are not limited thereto. Similar to the circular tuning stub 210, the OMT device 550 may include a circular tuning stub which may be formed from and / or may include a circular-shaped metallic section 561 which is formed from the bottommetallic layer 202, and a circular-shaped set of TGVs 562, wherein the TGVs 562 are formed in and / or included in the glass substrate 201.

[0097] In contrast to the first example OMT device 200, the second example OMT device 550 may omit the first and second rectangular waveguides 240 and 250 which were included in the first OMT device 200, but is not limited thereto. The second example OMT device 550 may also include a first hybrid E-plane T-junction 570 and a second hybrid E-plane T-junction 580, but is not limited thereto, and for example, the OMT device 550 may include fewer or greater numbers of hybrid E-plane T-junctions.

[0098] Referring now to FIG. 6B, when the second example OMT device 550 is physically manufactured, similar to the first example OMT device 200, the 5-terminal network may be converted into a 3-terminal (e.g., a 3-port) network including the first hybrid E-plane T-junction 570 and the second hybrid E-plane T-junction 580, but is not limited thereto. The first hybrid E-plane T-junction 570 and / or the second hybrid E-plane T-junction 580 may include air bridges 571 and 581, respectively, which may be arcuateshaped (e.g., substantially “C”-shaped, etc.) and may include a central protrusion, referred to as a back-short, which is configured to improve the matching of the radio frequencies and to guide RF signals (e.g., electromagnetic waves, wireless signals, etc.), but the example embodiments are not limited thereto, and for example, the air bridges may have different shapes, dimensions, etc. The air bridges 571 and 581 may be defined by and / or formed from controlled-depth cavities (e.g., air cavities) formed on, for example, the top surface of the metal plate 205, which is the surface of the metal plate 205 in contact with the bottom metallization layer 202 of the glass substrate 201, but the example embodiments are not limited thereto. The first hybrid E-plane T-junction 570 and the second hybrid E-plane T-junction 580 may act as a hybrid two-layer air bridge which use the SIW metallization, e.g., the bottom-side metallization layer 202, and the air bridges 571 and 581 to remedy (and / or circumvent) the intersection of the first signal and the second signal shown in FIGS. 6A and 6B, by having the two signals transmit through two different layers of the OMT device 550, e.g., the glass substrate 201 and air contained in the air cavities inside the metal plate 205.

[0099] The first hybrid E-plane T-junction 570 may include (and / or may be formed by) air bridge 570 in combination with a first set of E-field coupling apertures 572, 573, and 574, and the SIW sections SIW#5, S1W#7, and SIW#8 of the glass substrate bottom-side metallization 202, but is not limited thereto. The second hybrid E-plane T-junction 580may include (and / or may be formed from) a second air bridge 581 , a second set of E-field coupling apertures 582, 583, and 584, and the SIW sections SIW#6, SIW#9, and SIW#10 of the glass substrate bottom-side metallization 202, but is not limited thereto. In contrast to the first example OMT device 200, the second example OMT device 550 may omit the rectangular waveguides (e.g., rectangular waveguides 240 and 250) and / or the tuning stubs (e.g., the tuning stubs 220 and 230), and may instead be directly connected to (e.g., receive RF signals and / or transmit RF signals) the RFIC 510 A and / or RFIC 510B , thereby reducing and / or decreasing the number of interfaces and / or waveguides included in the OMT device and further reducing manufacturing complexity and costs, but the example embodiments are not limited thereto.

[0100] According to some example embodiments, the air bridges 571 and 581 may have widths of 1.42 mm and the central protrusion may be 1.487 mm wide and 0.42 mm in length, and the SIW sections SIW #5 to SIW #10 may have widths of 1.25 mm, for a D-band OMT device, but the example embodiments are not limited thereto. Additionally, the E-field coupling apertures 572 to 584 may have lengths of, e.g., approximately 1.17 mm, the E-field coupling apertures 572 and 582 may have widths of approximately 0.13 mm, and the E-field coupling apertures 573, 574, 583, and 584 may have widths of approximately 0.11 mm, for a D-band OMT device, but the example embodiments are not limited thereto.

[0101] The first and second sets of E-field coupling apertures 572 to 573 and 582 to 583 may be openings (e.g., slots, etc.) etched and / or otherwise created in the glass substrate bottom-side metallization 202, and the first and second sets of E-field coupling apertures 572 to 573 and 582 to 583 may allow for electromagnetic waves to couple in and / or out of the corresponding SIW sections and air bridge sections, e.g., SIW #5 to / from SIW #7 and SIW #8 through air bridge 571 and SIW #6 to / from SIW #9 and SIW#10 through air bridge 581, respectively. More specifically, assuming that the OMT device 550 is in a transmission mode as shown in FIGS. 6A and 6B, the RFIC 510A may transmit a first RF signal and transition into SIW #5 (e.g., into the glass substrate layer 201), and the first RF signal may first divide, separate, and / or split into two half-power RF signals that are 180 degrees out of phase with each other and pass through the first hybrid E-plane T-junction (formed by the air bridge 571, the first set of E-field aperture 572, and the bottom-side metallization layer 202). More specifically, the first RF signal may travel through the SIW #5 and transition from the glass substrate layer 201 into the air bridge571 formed by the metal plate 205 and glass substrate bottom-side metallization 202 via the E-field coupling aperture 572. Once the first RF signal enters the first air bridge 571 via the E-field coupling aperture 572, the first RF signal may divide, separate, and / or split into two half-power (e.g., 180 degree out of phase with each other) RF signals and travel to the E-field coupling apertures 573 and 574, respectively. The first air bridge 571, and more specifically, the curved portion of the first air bridge 571 which extends from the E-field coupling aperture 572 to the E-field coupling aperture 573, may act as an air bridge and may allow the first divided RF signal to avoid interference with and / or intersection with a RF signal being transmitted along SIW#9 (e.g., a RF signal being transmitted in the glass substrate layer 201). The two half-power and 180 degrees out of phase first RF signals may then transition from the air bridge 571 to the glass substrate 201 via the E-field apertures 573 and 574, thereby entering the SIW sections SIW #7 and the SIW #8, respectively, before being combined and / or recombined and guided by the circular tuning stub 561 to the radio antenna 140 by the circular waveguide 560.

[0102] Similarly, the second RFIC 510B may transmit a second RF signal, which may propagate in the glass substrate layer 201 along the SIW section SIW #6 to the E- field coupling aperture 582. The second RF signal may then transition (e.g., vertically transition) to the air bridge layer defined by glass substrate bottom-side metallization 202 and metal plate 205 via the E-field coupling aperture 582, and may divide and / or split into two half-power 180 degrees out of phase second RF signals through the second air bridge 581. The two 180 degrees out of phase second RF signals may travel to the E- field coupling apertures 583 and 584, respectively, and then transition from the air bridge 581 to the glass substrate 201 via the E-field apertures 583 and 584, thereby entering the SIW sections SIW #9 and the SIW #10, respectively, before being combined and / or recombined and guided by the circular tuning stub 561 to the radio antenna 140 by the circular waveguide 560. Similar to the OMT device 200 of FIGS. 2A to 4B, the OMT device 550 is not limited to a transmission mode, and may operate in a reception mode wherein the flow of RF signals occurs in the reverse direction from the direction shown in FIGS. 6A and 6B, or may operate simultaneously in transmission and reception modes.

[0103] FIGS. 7A to 7B are example views of the glass substrate of the second example OMT device 550 according to some example embodiments. FIGS. 8A to 8B are example views of the metal plate of the second example OMT device 550 according to some example embodiments.

[0104] As shown in FIG. 7 A, illustrates a 3D view of the glass substrate 201 of the second example OMT device 550 according to at least one example embodiment, a view of the bottom of the glass substrate 201 and the bottom metallization layer 202, and a view of the top of the glass substrate 201 and the top metallization layer 203, but the example embodiments are not limited thereto. More specifically, the top metallization layer 203 is a solid metallization layer with etched openings to the glass substrate 201 corresponding to two embedded OMT devices (e.g., OMT interposers, etc.) 200A, and more specifically a first CBCPW 540A and a second CBCPW 540B, but the example embodiments are not limited thereto, and for example, there may be a greater or lesser number of embedded OMT devices 200A, etc. Additionally, first and second CBCPW transmission lines 543 and first and second interconnects 530 may be formed on the top metallization layer 203 and may be used to connect a first RFIC and / or a second RFIC (not shown) to the first and second embedded OMT devices 200A.

[0105] The bottom metallization layer 202 of the OMT device 550 may include a plurality of openings corresponding to, for example, the circular waveguide 560, the first set of rectangular E-field coupling apertures 572 to 573, and the second set of rectangular E-field coupling apertures 582 to 583, such that the glass substrate 201 is exposed in order to transmit and / or receive RF signals through one or more of these openings, but the example embodiments are not limited thereto. Additionally, the bottom metallization layer 202 may be etched such that the circular tuning stub 561 is formed from the material of the bottom metallization layer 202 inside of the opening of the circular waveguide 560. The top metallization layer 203 and / or the bottom metallization layer 202 may include and / or may be formed from any type of metal and / or metal alloy, including aluminum, copper, etc.

[0106] FIG. 7B illustrates a top view of the glass substrate 201 only (e.g., omitting the two metallization layers 202 and 203). As shown in FIG. 7B, the perimeters of the fifth to tenth SIW sections SIW #5 to SIW #10, the circular waveguide 560, and the tuning stub 561 may be formed and / or defined by a plurality of TGVs, and as shown in the 3D view of the glass substrate 201 shown in FIG. 7A, each of the TGVs may penetrate completely through the glass substrate 201 such that electrical component of RF signals may be transmitted between the top and bottom metallization layers 203 and 202.

[0107] FIG. 8A illustrates a 3D view of the metal plate 205, a top view of the metal plate 205, and a bottom view of the metal plate 205. FIG. 8B illustrates a crosssection view of the metal plate 205 taken along line 11I-IV of the 3D view of the metal plate 205 illustrated in FIG. 8A.

[0108] As shown in FIG. 8A, the circular waveguide 560 and the hybrid E-plane T-junctions 570 and 580 may be formed in and / or included in the metal plate 205, but the example embodiments are not limited thereto. Further, the circular waveguide 560 may be formed using and / or defined by a through-hole (see FIG. 8B) which penetrates through the entirety of the metal plate 205. In contrast, the hybrid E-plane T-junctions 570 and 580 may be defined by and / or formed from controlled-depth cavities 590 (e.g., air cavities) formed on, for example, the top surface of the metal plate 205, which is the surface of the metal plate 205 which is in contact with the bottom metallization layer 202 of the glass substrate 201, but the example embodiments are not limited thereto. As shown in FIG. 8B, the controlled-depth cavities do not penetrate through the entirety of the metal plate 205, or in other words, have a depth that is less than the depth of the through-hole. The through-hole and / or the controlled-depth air cavities may be formed by, for example, CNC machining, but the example embodiments are not limited thereto.

[0109] This written description uses examples of the subject matter disclosed to enable any person skilled in the art to practice the same, including making and using any devices or systems and performing any incorporated methods. The patentable scope of the subject matter is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims.

[0110] Detailed example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing the example embodiments. The example embodiments may, however, be embodied in many alternate forms and should not be construed as limited to only the example embodiments configured forth herein.

[0111] It will be understood that, although the terms first, second, and so on may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the example embodiments. As used herein, the term “and / or,” includes any and all combinations of one or more of the associated listed items.

[0112] It will be understood that when an element is referred to as being “connected,” or “coupled,” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected,” or “directly coupled,” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between,” versus “directly between,” “adjacent,” versus “directly adjacent”).

[0113] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular forms “a,” “an,” and “the,” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and / or “including,” when used herein, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0114] It should also be noted that in some alternative implementations, the functions / acts noted may occur out of the order noted in the figures. For example, two figures illustrated in succession may in fact be executed substantially concurrently or may sometimes be executed in the reverse order, depending upon the functionality / acts involved.

[0115] Specific details are provided in the description above to provide a thorough understanding of the example embodiments. However, it will be understood by one of ordinary skill in the art that example embodiments may be practiced without these specific details. For example, systems may be illustrated in block diagrams in order not to obscure the example embodiments in unnecessary detail. In other instances, well- known processes, structures and techniques may be illustrated without unnecessary detail in order to avoid obscuring example embodiments.

[0116] Also, it is noted that example embodiments may be described as a process depicted as a flowchart, a flow diagram, a data flow diagram, a structure diagram, or a block diagram. Although a flowchart may describe the operations as a sequential process, many of the operations may be performed in parallel, concurrently or simultaneously. In addition, the order of the operations may be re-arranged. A process may be terminated when its operations are completed, but may also have additional steps not included in thefigure. A process may correspond to a method, a function, a procedure, a subroutine, and / or a subprogram. When a process corresponds to a function, its termination may correspond to a return of the function to the calling function or the main function.

[0117] Moreover, as disclosed herein, the term “memory” may represent one or more devices for storing data, including random access memory (RAM), magnetic RAM, core memory, and / or other machine readable mediums for storing information. The term “storage medium” may represent one or more devices for storing data, including read only memory (ROM), random access memory (RAM), magnetic RAM, core memory, magnetic disk storage mediums, optical storage mediums, flash memory devices and / or other machine readable mediums for storing information. The term “computer-readable medium” may include, but is not limited to, portable or fixed storage devices, optical storage devices, wireless channels, and various other mediums capable of storing, containing or carrying instruction(s) and / or data.

[0118] Furthermore, example embodiments may be implemented by hardware circuitry and / or software, firmware, middleware, microcode, and / or hardware description languages, in combination with hardware (e.g., software executed by hardware). When implemented in software, firmware, middleware or microcode, the program code or code segments to perform the desired tasks may be stored in a machine or computer readable medium such as a non-transitory computer storage medium, and loaded onto one or more processors to perform the desired tasks.

[0119] A code segment may represent a procedure, a function, a subprogram, a program, a routine, a subroutine, a module, a software package, a class, or any combination of instructions, data structures, or program statements. A code segment may be coupled to another code segment or a hardware circuit by passing and / or receiving information, data, arguments, parameters, or memory contents. Information, arguments, parameters, and / or data, may be passed, forwarded, or transmitted via any suitable means including memory sharing, message passing, token passing, and / or network transmission.

[0120] As used in this application, the term “circuitry” and / or “hardware circuitry” may refer to one or more or all of the following: (a) hardware-only circuit implementation (such as implementations in only analog and / or digital circuitry); (b) combinations of hardware circuits and software, such as (as applicable): (i) a combination of analog and / or digital hardware circuits) with software / firmware, and (ii) any portions of hardware processor(s) with software (including digital signal processor(s)), software,and memory (ies) that work together to cause an apparatus, such as a mobile phone or server, to perform various functions); and (c) hardware circuit(s) and / or processor(s), such as microprocessor(s) or a portion of a microprocessor(s), that requires software (e.g., firmware) for operation, but the software may not be present when it is not needed for operation. For example, the circuitry more specifically may include, but is not limited to, a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a System-on-Chip (SoC), a programmable logic unit, a microprocessor, or an application-specific integrated circuit (ASIC).

[0121] This definition of circuitry applies to all uses of this term in this application, including in any claims. As a further example, as used in this application, the term circuitry also covers an implementation of merely a hardware circuit or processor (or multiple processors) or portion of a hardware circuit or processor and its (or their) accompanying software and / or firmware. The term circuitry also covers, for example and if applicable to the particular claim element, a baseband integrated circuit or processor integrated circuit for a mobile device or a similar integrated circuit in server, a cellular network device, or other computing or network device.

Claims

WHAT IS CLAIMED IS:

1. A radio frequency (RF) transceiver device comprising: an orthomode transducer (OMT) device, the OMT device including a glass substrate and a metal plate, the glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the metal plate mounted on the second metallization layer; and a radio antenna connected to the OMT device.

2. The RF transceiver device of claim 1, wherein the glass substrate and the metal plate define: first to fourth substrate integrated waveguide (SIW) sections; a hybrid turnstile junction, the hybrid turnstile junction at an intersection of first ends of the first to fourth SIW sections; a first electric (E)-plane T-junction, the first E-plane T-junction including a second end of the first SIW section and a second end of the second SIW section; and a second E-plane T-junction, the second E-plane T-junction including a second end of the third SIW section and a second end of the fourth SIW section.

3. The RF transceiver device of any one of claims 1 to 2, wherein each of the first to fourth SIW sections includes: a plurality of through-glass vias (TGVs) included in the glass substrate, the plurality of TGVs defining a corresponding channel for the respective SIW section in the glass substrate.

4. The RF transceiver device of any one of claims 1 to 3, wherein a distance between each of the plurality of TGVs is 1 / 10 or less of a desired transmission / reception wavelength.

5. The RF transceiver device of any one of claims 1 to 4, wherein the hybrid turnstile junction comprises: a first tuning stub configured to transition radio frequency (RF) signals to or from the radio antenna in a transmission mode or a reception mode, respectively; andthe first ends of the first to fourth S1W sections each arranged 90 degrees apart around the first tuning stub.

6. The RF transceiver device of any one of claims 1 to 5, wherein the first tuning stub is defined by: a circular-shaped set of TGVs included in the glass substrate; and a circular-shaped metallic section of the second metallization layer covering the circular-shaped set of TGVs.

7. The RF transceiver device of any one of claims 1 to 6, further comprising: a circular waveguide defined in the metal plate, the circular waveguide having a larger surface area than the first tuning stub, and the circular waveguide covering the first tuning stub in a vertical direction.

8. The RF transceiver device of any one of claims 1 to 7, wherein the first E-plane T-junction comprises: a second tuning stub configured to transition RF signals to or from the first metallization layer and the second metallization layer in a transmission mode or a reception mode, respectively; and the second ends of the first and second SIW sections are connected to a first and second side of the second tuning stub, respectively, the first and second side of the second tuning stub being 180 degrees apart.

9. The RF transceiver device of any one of claims 1 to 8, wherein the second tuning stub is defined by: an elliptical-shaped set of TGVs included in the glass substrate; and an elliptical-shaped metallic section of the second metallization layer covering the elliptical-shaped set of TGVs.

10. The RF transceiver device of any one of claims 1 to 9, wherein the second E-plane T-junction comprises:a third tuning stub configured to transition RF signals to or from the first metallization layer and the second metallization layer in a transmission mode or a reception mode, respectively; and the second ends of the third and fourth SIW sections are connected to a first and second side of the third tuning stub, respectively, the first and second side of the third tuning stub being 180 degrees apart.

11. The RF transceiver device of any one of claims 1 to 10, further comprising: first and second rectangular waveguides defined in the metal plate; the first rectangular waveguide having a larger surface area than the second tuning stub, and the first rectangular waveguide covering the second tuning stub in a vertical direction; and the second rectangular waveguide having a larger surface area than the third tuning stub, and the second rectangular waveguide covering the third tuning stub in the vertical direction.

12. The RF transceiver device of any one of claims 1 to 11 , wherein each of the third SIW section and the fourth SIW section includes an air bridge; and each of the air bridges includes a rectangular waveguide defined in the metal plate and rectangular E-field coupling apertures defined in the second metallization layer.

13. The RF transceiver device of any one of claims 1 to 12, wherein the first E-plane T-junction includes a first elliptical-shaped tuning stub configured to either divide RF signals in a transmission mode or combine the RF signals in a reception mode; and the second E-plane T-junction includes a second elliptical-shaped tuning stub configured to either divide the RF signals in a transmission mode or combine the RF signals in a reception mode.

14. The RF transceiver device of any one of claims 1 to 13, further comprising: at least one RF integrated circuit (RF1C); andthe OMT device is directly connected to the at least one RF1C via at least one interconnect.

15. An orthomode transducer (OMT) device comprising: a glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the glass substrate including a plurality of through-glass-vias (TGVs) defining at least one substrate integrated waveguide (SIW) section; and a metal plate mounted on the second metallization layer, the metal plate defining a circular waveguide.

16. The OMT device of claim 15, wherein the circular waveguide is connected to a radio antenna.

17. The OMT device of any one of claims 15 to 16, further comprising: a first tuning stub configured to transition radio frequency (RF) signals to or from the radio antenna in a transmission mode or a reception mode, respectively, the first tuning stub including a circular metallic portion of the second metallization layer and a circular set of TGVs from the plurality of TGVs.

18. The OMT device of any one of claims to 15 to 16, wherein the metal plate further includes: first and second rectangular waveguides, the first and second rectangular waveguides formed as rectangular-shaped through-holes in the metal plate, the first and second rectangular waveguides corresponding to second and third tuning stubs, respectively; and first and second cavities on a first surface of the metal plate, the first and second cavities configured to operate as air bridges.

19. The OMT device of any one of claims 15 to 18, wherein the at least one SIW section includes first to fourth SIW sections; a first end of the first SIW section and a first end of the second SIW section are connected to the second tuning stub on opposing sides of the second tuning stub;a first end of the third SIW section and a first end of the fourth S1W section are connected to the third tuning stub on opposing sides of the third tuning stub; the first rectangular waveguide overlaps the first end of the first SIW section, the first end of the second SIW section, and the second tuning stub; and the second rectangular waveguide overlaps the first end of the third SIW section, the first end of the fourth SIW section, and the third tuning stub.

20. The OMT device of any one of claims 15 to 19, wherein the metal plate further includes: first and second cavities on a first surface of the metal plate, the first and second cavities configured to operate as air bridges.

21. The OMT device of any one of claims 15 to 20, wherein the first and second cavities are both arcuate shaped, and each of the first and second cavities include: a central E-field coupling aperture defined in the second metallization layer; and a first end and second end E-field coupling apertures defined in the second metallization layer, the first end and second end E-field coupling apertures located at a first end and second end of the respective cavity.

22. The OMT device of any one of claims 15 to 21, wherein the at least one SIW section includes fifth to tenth SIW sections; a first end of the fifth SIW section is connected to a first radio frequency integrated circuit (RFIC) via at least one first interconnect; a second end of the fifth SIW section is connected to the central E-field coupling aperture of the first cavity; the first end E-Field coupling aperture of the first cavity is connected to a first end of the eighth SIW section; the second end E-Field coupling aperture of the first cavity is connected to a first end of the seventh SIW section; a first end of the sixth SIW section is connected to a second RFIC via at least one second interconnect; a second end of the sixth SIW section is connected to the central E-field coupling aperture of the second cavity;the first end E-Field coupling aperture of the second cavity is connected to a first end of the ninth SIW section; and the second end E-Field coupling aperture of the second cavity is connected to a first end of the tenth SIW section.

23. The OMT device of any one of claims 15 to 22, wherein the first cavity overlaps the ninth SIW section; and the circular waveguide is connected to a second end of the seventh SIW section, a second end of the eighth SIW section, a second end of the ninth SIW section, and a second end of the tenth SIW section.

24. The OMT device of any one of claims 15 to 23, further comprising: a conductor-backed coplanar waveguide (CBCPW) transition defined in the first metallization layer, the CBCPW transition configured to transmit RF signals between the at least one SIW section and at least one RFIC.

25. The OMT device of any one of claims 15 to 24, wherein the CBCPW transition is connected to at least one interconnect; and the at least one interconnect is connected to the at least one RFIC.

26. A network node comprising: at least one RF integrated circuit (RFIC) configured to transmit or receive radio frequency (RF) signals; and an orthomode transducer (OMT) device, the OMT device including a glass substrate and a metal plate, the glass substrate having a first metallization layer on a first surface and a second metallization layer on a second surface, the metal plate mounted on the second metallization layer, the OMT device connected to a radio antenna, the OMT device configured to, forward the RF signals from the at least one RFIC to the radio antenna, or forward the RF signals from the radio antenna to the at least one RFIC.

27. The network node of claim 26, further comprising:a conductor-backed coplanar waveguide (CBCPW) transition defined in the first metallization layer, the CBCPW transition configured to transmit the RF signals between at least one substrate integrated waveguide (SIW) section included in the glass substrate and the at least one RFIC.

28. The network node of any one of claims 26 to 27, wherein the CBCPW transition is connected to at least one interconnect; and the at least one interconnect is connected to the at least one RFIC.

29. The network node of any one of claims 26 to 28, wherein the network node is a point-to-point wireless backhaul network node.

30. The network node of any one of claims 26 to 29, wherein the OMT device is configured to transmit and receive RF signals between 30 GHz to 300 GHz.

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