Vapor deposition device and semiconductor processing system

Abstract

The present invention relates to the technical field of vapor deposition and provides a vapor deposition device and a semiconductor processing system, aiming to solve the problem of mutual crosstalk of gas flow in a multi-chamber device. The technical solution of the present invention mainly comprises: a chamber main body divided into an upper main body and a lower main body, wherein one side of the lower main body is provided with an external substrate transfer port; a reaction chamber set arranged inside the chamber main body and configured to execute a substrate handling operation by means of the external substrate transfer port, wherein the reaction chamber set comprises at least two reaction chamber units, two adjacent reaction chamber units are separated by the chamber walls arranged on both the upper main body and the lower main body, and the chamber wall at the lower main body between two adjacent reaction chamber units is provided with an internal substrate transfer port; a base arranged inside the reaction chamber units, wherein the base is movable up and down between a position in the upper main body and a position in the lower main body; and a gas showerhead arranged opposite to the base and mounted inside the upper main body. The vapor deposition device and the semiconductor processing system of the present invention are used for executing a vapor deposition process.

Description

A vapor deposition apparatus and a semiconductor processing system TECHNICAL FIELD

[0001] The present invention relates to the technical field of vapor deposition, in particular to the technical field of a vapor deposition apparatus and a semiconductor processing system. BACKGROUND

[0002] Microfabrication of semiconductor substrates or wafers is a well-known technique that can be used to manufacture, for example, semiconductors, flat panel displays, light emitting diodes (LEDs), solar cells, etc. One important step in microfabrication manufacturing is a plasma processing step, which is performed inside a reaction chamber into which process gas is introduced. A radio frequency source is inductively and / or capacitively coupled to the interior of the reaction chamber to energize the process gas to form and sustain a plasma. Inside the reaction chamber, an exposed substrate is supported on a susceptor and is held in a fixed position by some clamping force to ensure the safety of the substrate and the high yield of the process.

[0003] To improve the production efficiency of substrates per unit time and consider the space utilization, a common processing method is to integrate at least two reaction chambers in one semiconductor processing apparatus, so that the two reaction chambers share some structures while meeting the requirements of high efficiency production and low space occupation. However, the shared structures can cause cross-talk between the two chambers, affecting the uniformity of substrate processing. SUMMARY

[0004] To solve the problem of cross-talk between multiple chambers during the process reaction, the present invention provides a vapor deposition apparatus, comprising:

[0005] A chamber body, the chamber body comprising a body upper portion and a body lower portion, one side of the body lower portion being provided with an outer transmission sheet port;

[0006] A reaction chamber group located inside the chamber body, the reaction chamber group performing the in-out action of the substrate through the outer transmission sheet port;

[0007] The reaction chamber group comprises at least two reaction chamber units, adjacent two reaction chamber units being separated by a chamber wall, and the chamber wall of the body lower portion between adjacent two reaction chamber units being provided with an inner transmission sheet port;

[0008] A susceptor located inside the reaction chamber unit, the susceptor being capable of ascending and descending between the position of the body upper portion and the position of the body lower portion;

[0009] A gas shower head located inside the reaction chamber unit opposite to the susceptor.

[0010] Optionally, a switchable blocking structure is arranged on the inner transmission port, for blocking gas exchange between two adjacent reaction chamber units.

[0011] Optionally, the blocking structure comprises a liftable blocking plate.

[0012] Optionally, the blocking structure further comprises:

[0013] a driving motor located above the upper part of the main body;

[0014] a transmission rod located in the cavity wall of the upper part of the main body, the transmission rod fixedly connecting the driving motor and the blocking plate, for driving the blocking plate to descend to close the inner transmission port or to ascend to open the inner transmission port.

[0015] Optionally, the blocking structure comprises a gas curtain flowing above and below the inner transmission port.

[0016] Optionally, the inside of the reaction chamber unit is provided with a plasma confinement ring located above the position of the inner transmission port.

[0017] Optionally, an annular support is arranged on the cavity wall of the lower part of the main body of the reaction chamber unit, for supporting the plasma confinement ring, the annular support being provided with a through port in the region coinciding with the inner transmission port and / or the outer transmission port, to prevent hindering the transmission of the substrate.

[0018] Optionally, an exhaust port is arranged on the bottom wall of the lower part of the main body between two adjacent reaction chamber units, the exhaust port being located below the inner transmission port and being separated from the inner transmission port by a cavity wall, the exhaust port communicating between two adjacent reaction chamber units.

[0019] Optionally, the inside of the chamber main body is provided with two reaction chamber groups, the outer transmission ports of the two reaction chamber groups being located on the same side of the chamber main body.

[0020] Optionally, an exhaust port is arranged on the bottom wall of the lower part of the main body between two adjacent reaction chamber units between two reaction chamber groups, the exhaust port communicating between two adjacent reaction chamber units.

[0021] Optionally, the exhaust ports are located on the same circumference.

[0022] Optionally, further comprising an actuating assembly located below the lower part of the main body, the actuating assembly penetrating the bottom wall of the lower part of the main body and being connected with the pedestal, for controlling the pedestal to ascend to the position of the upper part of the main body during the process and to descend to the position of the lower part of the main body during the transmission of the substrate.

[0023] Optionally, a radio frequency source is further included, which is electrically connected with the base or the gas shower head, and is used for exciting plasma during the process.

[0024] Optionally, a sealing ring is arranged on the cavity wall of the upper and lower body.

[0025] Optionally, the upper side cavity wall of the reaction cavity unit is integrally machined on the upper body, and the lower side cavity wall, the outer transmission piece port and the inner transmission piece port of the reaction cavity are integrally machined on the lower body.

[0026] Optionally, a lifting pin is further included, which can be lifted through the upper surface of the base.

[0027] The present application further provides a semiconductor processing system, which comprises:

[0028] A transmission cavity is arranged inside the transmission cavity, and the length of the mechanical arm is greater than the width of the reaction cavity unit.

[0029] The vapor deposition device as described in any one of the above is connected to one side of the transmission cavity.

[0030] The outer transmission piece port is in communication with the transmission cavity, and the outer transmission piece port is provided with a switchable sealing door.

[0031] Optionally, the number of the reaction cavity groups is at least two, and the side of the cavity body opposite to the transmission cavity is provided with at least two outer transmission piece ports, which respectively correspond to the at least two reaction cavity groups; the mechanical arm has at least two branches, which respectively transmit the substrate in the corresponding reaction cavity group through the at least two outer transmission piece ports.

[0032] Optionally, the other side of the transmission cavity is further connected with a vacuum locking cavity, which is used for temporarily storing the substrate.

[0033] Optionally, the transmission cavity comprises at least four sides, and at least three sides thereof are connected with the vapor deposition device as described in any one of the above.

[0034] Optionally, the number of the transmission cavities is at least two, each of the transmission cavities comprises at least four sides, and at least two of the transmission cavities are connected through one opposite side thereof; the other sides of each of the transmission cavities are connected with the vapor deposition device as described in any one of the above.

[0035] The technical scheme has the following advantages or beneficial effects: the gas deposition equipment provided by the application comprises a plurality of reaction cavity units formed by the cavity wall inside the chamber main body and the side wall of the chamber main body, and the outer transmission sheet port and the inner transmission sheet port are arranged on the cavity wall of the lower part of the main body, so that the reaction cavity units can exchange the substrates through the inner transmission sheet port when the susceptor is lowered into the lower part of the main body, and the substrates are finally transmitted to the outside through the outer transmission sheet port. During the process, the susceptor drives the substrate to rise to the upper part of the main body, so as to be far away from the transmission sheet port, and the reaction is carried out in the space formed in the upper part of the main body. In addition, the positions of the lower part of the main body are mostly surrounded by the cavity wall of the lower part of the main body except the position of the inner transmission sheet port, so that the gas exchange between the two reaction cavity units is greatly reduced. The size of the inner transmission sheet port can be adjusted according to the size of the substrate, so as to occupy the smallest space. From the perspective of the internal reaction space of the reaction cavity unit, the inner transmission sheet port is arranged to be completely connected to the lower part of the main body, that is, there is no cavity wall, so that the cross-talk of the reaction gas can be significantly improved. BRIEF DESCRIPTION OF DRAWINGS

[0036] In order to more clearly illustrate the technical scheme in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.

[0037] Fig. 1 is a front structure view of the gas deposition equipment of the application;

[0038] Figs. 2A-2B are sectional views along the direction of line A-A in Fig. 1A;

[0039] Figs. 3A-3B are plan views of the upper part and the lower part of the main body of the gas deposition equipment of the application;

[0040] Figs. 4A-4B are schematic views of the upper part of the main body of another embodiment of the gas deposition equipment of the application;

[0041] Figs. 5A-5E are schematic views of the upper part of the main body of another embodiment of the gas deposition equipment of the application;

[0042] Figs. 6A-6B are schematic views of the plasma confinement ring and the support in the gas deposition equipment of the application;

[0043] Fig. 7 is a schematic view of the structure of the semiconductor processing system of the application. DETAILED DESCRIPTION

[0044] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0045] In order to improve the stability of the processing environment in the reaction cavity in the process, prevent cross-interference between different reaction cavities, the present application adopts an improved cavity sealing degree, and combines the dynamic switching scheme of the position of the process reaction and the position of the wafer transmission, thereby realizing the maximum independence of each reaction cavity.

[0046] Figure 1 is a front view of the vapor deposition equipment of the present application. The vapor deposition equipment 100 of the present embodiment specifically includes a cavity main body 101, which forms a reaction space for performing a vapor deposition process inside. Other components of the vapor deposition process equipment are assembled on the basis of the cavity main body 101. The cavity main body 101 includes a main body upper part 110 and a main body lower part 120 which can be separated from each other, so as to be disassembled in a maintenance state or an installation state, facilitating the cleaning of the inside and the step-by-step assembly of other components. The main body 101 can be designed as a polyhedral structure with at least one side or other shapes according to the conditions of space and functional requirements. One side of the main body lower part 120 is provided with an outer wafer transmission port 121 for transmitting the wafer into the cavity main body 101 before reaction or transmitting the wafer out after reaction.

[0047] As shown in Figures 2A-2B, which are sectional views along the A-A line direction of Figure 1, the reaction cavity group 103 is located inside the cavity main body 101, and the reaction cavity group 103 performs the in-out action of the wafer through the outer wafer transmission port 121.

[0048] The reaction cavity group 103 comprises at least two reaction cavity units 104, as shown in the scheme of FIG. 2A, two reaction cavity units 104 are provided, and both share one outer transmission sheet port 121. In other embodiments, the reaction cavity group 103 can also continue to expand to other numbers of reaction cavity units 104 and share one outer transmission sheet port 121. As shown in FIG. 2B, the two adjacent reaction cavity units 104 are isolated by the cavity walls 102 provided on the upper body 110 and the lower body 120. The cavity walls 102 can be formed by extending downward from the top wall of the upper body 110 or upward from the bottom wall of the lower body 120. By combining the upper body 110 and the lower body 120, the cavity walls 102 on both sides correspond to the reaction space of the reaction cavity unit 104. The cavity walls 102 on the lower body 120 between the two adjacent reaction cavity units 104 are provided with an inner transmission sheet port 122, and the substrate is transferred between the two reaction cavity units 104 through the inner transmission sheet port 122.

[0049] A susceptor 123 is provided inside each reaction cavity unit 104, and the susceptor 123 can be lifted between the position of the upper body and the position of the lower body. An actuating assembly can be provided below the lower body, and the actuating assembly is connected to the susceptor 123 through the bottom wall of the lower body. As shown in FIG. 2B, the susceptor 123 is lifted to the position of the upper body 110, and a vapor deposition process can be performed. As shown in FIG. 2A, the susceptor 123 is lowered to the position of the lower body 120, and the substrate transmission operation can be performed. In some embodiments, the plane where the susceptor 123 is lowered to the position of the lower body 120 is lower than the plane where the inner transmission sheet port 122 is located.

[0050] A gas shower head 111 opposite to the susceptor 123 is also provided inside the upper body 110. The gas shower head 111 is mainly used to introduce reaction gas into the reaction cavity unit 104 for deposition process. The gas shower head 111 can be any device capable of introducing gas, as long as it has a gas pipeline. Further, the uniformity of the deposition reaction can be improved by the specific structural design of the gas shower head 111.

[0051] In the vapor deposition reaction, especially in the plasma enhanced chemical vapor deposition (PECVD) process, the flow direction of the gas is mainly subject to the structure inside the cavity. Ideally, the gas flows symmetrically along the axis of the substrate, which is conducive to forming uniform deposition on the surface of the substrate. However, in order to improve production efficiency, in the case of providing multiple reaction cavities in the same vapor deposition device, the gas will flow between the areas where multiple substrates are located, and even when the plasma is ignited above the substrate, the plasma will also flow with the gas between different substrate reaction areas. This not only affects the uniformity of the deposition, making it impossible to ensure the quality stability of multiple substrates produced in the same device, but also poses the risk of plasma drifting to other reaction areas to cause local discharge.

[0052] The gas deposition device provided by the application comprises a plurality of reaction cavity units 104 surrounded by the cavity wall 102 inside the chamber body 101 and the side wall of the chamber body 101, and the outer transmission port 121 and the inner transmission port 122 are arranged on the cavity wall 102 of the lower part 120 of the chamber body 101, so that the reaction cavity units 104 can exchange the substrates through the inner transmission port 122 when the susceptor 123 is lowered into the lower part 120 of the chamber body 101, and the substrates are finally transmitted to the outside through the outer transmission port 121. During the process, the susceptor 123 drives the substrates to rise to the position of the upper part 110 of the chamber body 101, so as to be far away from the transmission port, and the reaction is carried out in the space surrounded by the upper part 110 of the chamber body 101. At the same time, because the position of the lower part 120 of the chamber body 101 is mostly surrounded by the cavity wall 102 of the lower part 120 of the chamber body 101 except the position of the inner transmission port 122, the gas exchange between the two reaction cavity units 104 is greatly reduced. The size of the inner transmission port 122 can be adjusted according to the size of the substrate, so as to occupy the smallest space. From the perspective of the internal reaction space of the reaction cavity unit 104, the inner transmission port 122 is arranged to be completely communicated with the lower part 120 of the chamber body 101, that is, there is no cavity wall 102, which can significantly improve the cross-talk of the reaction gas. In addition, because each reaction cavity unit has a substantially independent space, the radio frequency path can be substantially controlled in the internal space of the reaction cavity unit, so as to prevent the cross-talk of the radio frequency energy between adjacent reaction cavity units, which is beneficial to the uniform distribution of the plasma concentration and the improvement of the uniformity of the applied modulation radio frequency.

[0053] As shown in FIG. 2B, the lifting pin 124 which can be lifted through the upper surface of the susceptor 123 is further included. The lifting pin 124 can support the substrate to be separated from the susceptor 123 when the susceptor 123 is lowered below the position of the inner transmission port 122 or the outer transmission port 121, so that the mechanical arm can move the substrate below the transmission port. The lifting disc 125 can be arranged at the bottom of the reaction cavity unit and drive the vertical movement of the lifting pin 124 through the lifting movement. Specifically, the lifting pin 124 can be fixed on the lifting disc 125 or movably mounted on the susceptor 123.

[0054] In some embodiments, to further reduce the gas exchange between two adjacent reaction chamber units 104, a switchable blocking structure is provided on the inner transfer port 122. Specifically, as shown in the embodiment of FIG. 2A, a gas passage is provided in the chamber wall 102 of the upper body portion 110, and the gas passage is connected to a gas source 115 to form a gas curtain on both sides of the inner transfer port 122. The gas in the gas source 115 can be inert gas. During the process, the inert gas is blown from top to bottom into the inner transfer port 122 to block the gas exchange between two adjacent reaction chamber units 104. The gas passage can also be provided in the chamber wall 102 of the lower body portion 120 to blow the inert gas from bottom to top into the inner transfer port 122 to form a gas curtain on both sides of the inner transfer port 122.

[0055] In other embodiments, the blocking structure can also be as shown in FIG. 2B, which includes a blocking plate 114 that can move up and down to open or close the inner transfer port 122. Specifically, it can include a driving motor 112 located above the upper body portion 110, and a transmission rod 113 located in the chamber wall 102 of the upper body portion 110. The transmission rod 113 is fixedly connected to the driving motor 112 and the blocking plate 114, and is used to lower the blocking plate 114 to close the inner transfer port 122 during the process, and to raise the blocking plate 114 to open the inner transfer port 122 during the process. The blocking plate 114 and its transmission mechanism are provided above to leave more space for the design of other structures in the lower body portion 120. In other embodiments, the blocking plate 114 can also be designed to move from bottom to top. When the blocking plate 114 closes the inner transfer port 122, a sealing ring can also be provided at the contact between the blocking plate 114 and the chamber wall 102 to further improve the isolation effect of the two reaction chamber units. In other embodiments, the driving of the blocking plate 114 can also use a pneumatic motor to drive, or a manual switch, as long as it can move the blocking plate 114.

[0056] As shown in FIG. 2B, the bottom wall of the lower body portion 120 between two adjacent reaction chamber units 104 is provided with an exhaust port 126, which is located below the inner transfer port 122 and is isolated from the inner transfer port 122 by the chamber wall 102, and the exhaust port 126 is in communication with the two adjacent reaction chamber units 104. By sharing the exhaust port 126, the cost of the vapor deposition apparatus 100 is reduced, and the space of the lower portion of the chamber body 101 is saved, which can improve the integration of the deposition apparatus as a whole. In addition, during the process, when the reaction gas in the two reaction chamber units 104 is exhausted at the exhaust port 126, most of the gas is directly exhausted due to the pressure difference, and the gas exchange between the two reaction chamber units 104 does not occur.

[0057] In some embodiments, as shown in FIG. 2A, a radio frequency source 129 is electrically connected to the susceptor 123, and the gas showerhead 111 is grounded, so that when the susceptor 123 is raised, plasma is generated between the susceptor 123 and the gas showerhead 111. In other embodiments, the radio frequency source 129 can also be applied to the gas showerhead 111, or the radio frequency energy can be coupled into the chamber through an inductive coil outside the chamber.

[0058] In other embodiments, as shown in FIG. 6A, the inner portion of the reaction chamber unit is provided with a plasma confinement ring 117 above the position of the inner wafer transfer port 122. The plasma confinement ring 117 is located above the inner wafer transfer port 122 and the outer wafer transfer port 121. Since the plasma confinement ring can provide a certain degree of flow resistance, it can further avoid the radial difference in gas flow caused by the asymmetrically designed wafer transfer ports. The plasma confinement ring 117 can be composed of multiple concentric rings as shown in the upper diagram of FIG. 6B. The gaps between the concentric rings can pass through the reaction gas. During the process, the charged particles in the plasma above the susceptor will be annihilated on the concentric rings when passing through the concentric rings, thereby avoiding the damage to the lower portion of the reaction chamber caused by the charged particles entering the reaction chamber. At the same time, the plasma confinement ring 117 fixes the position above the chamber, and does not block the wafer transfer path. Only when the susceptor is raised to the process position, the plasma confinement ring 117 surrounds the susceptor. With the susceptor 123 and the plasma confinement ring 117 as boundaries, the space in the reaction chamber is divided into an upper process space and a lower space where the outer wafer transfer port 121, the inner wafer transfer port 122, and the gas exhaust port 126 are located. Therefore, the process cross-talk between adjacent reaction chamber units 104 can be further reduced. In other embodiments, according to different process requirements, the plasma confinement ring 117 can also not be provided, or the same effect as the plasma confinement ring 117 can be achieved through other designs, such as the protrusion of the inner sidewall of the chamber.

[0059] As shown in FIGS. 6A-6B, in order to fix the plasma confinement ring 117, an annular support 118 is provided on the lower portion of the main body of the reaction chamber unit. The annular support 118 can be an annular ring with a certain gap in the radial direction. The annular support 118 is provided with through openings 1181 and 1182 in the area where the annular support 118 coincides with the inner wafer transfer port 122 and / or the outer wafer transfer port 121, so as to prevent the transmission of the wafer. The annular support 118 is arranged to support the plasma confinement ring 117 from below. The space above the susceptor 123 is not interfered by other components. The components arranged in the space above are more likely to affect the gas flow and be deposited with a film layer, which may

[0060] As shown in FIGS. 3A-3B, the upper body portion 110 is integrally formed with the upper side cavity walls of the reaction cavity units, and the lower body portion 120 is integrally formed with the lower side cavity walls of the reaction cavity units, the outer transfer port and the inner transfer port. In some embodiments, the lower body portion 120 can also be integrally formed with the slot 128 for the movement of the blocking plate 114. By integrally forming, the flow of gas in the interior space of the reaction cavity units can be maximized, and the risk of gaps and the accumulation of deposits in the gaps can be reduced, thereby reducing the difficulty of maintenance and the probability of substrate contamination.

[0061] As shown in FIGS. 4A-4B, in this embodiment, the interior of the chamber body is provided with two reaction cavity groups, i.e., four reaction cavity units. The upper body portion 210 is integrally formed with the upper portions of the four reaction cavity units arranged in rows and columns. In this embodiment, the sidewall of the upper body portion 210 can also be integrally formed with the through observation window 216 for observing the process in this area.

[0062] As shown in FIGS. 5A and 5C, the lower body portion 220 is integrally formed with the lower portions of the four reaction cavity units arranged in rows and columns, the outer transfer port 221, the slot 228 and the exhaust port 226. In this embodiment, the outer transfer ports 221 of the two reaction cavity groups are located on the same side, which facilitates the transfer of substrates from the same side to the four reaction cavity units by the robot. In combination with the bottom view of the lower body portion 220 shown in FIG. 5B, and the cross-sectional views of the different sides of the lower body portion 220 shown in FIGS. 5D and 5E, in this embodiment, the bottom wall of the lower body portion between the adjacent two reaction cavity units of the two reaction cavity groups is provided with the exhaust port 227, so that one reaction cavity unit is exhausted through two exhaust ports. Compared with the exhaust of one reaction cavity unit through one exhaust port, the deposition non-uniformity caused by the bias of the gas flow is reduced. Preferably, in this embodiment, the two exhaust ports 226 and the two exhaust ports 227 are located on the same circumference, which further improves the uniformity of the gas flow in the chamber. Based on the principle of the pressure difference of the exhaust port, during the process, the adjacent reaction cavity units between the two reaction cavity groups will not exchange gas near the exhaust port 227.

[0063] As shown in Fig. 7, the present application further provides a semiconductor processing system 300, which comprises a transfer chamber 310, inside which a mechanical arm 311 is arranged, the length of the mechanical arm 311 is greater than the width of the reaction chamber unit 104, so that the end of the mechanical arm 311 can travel into the inside of the distal reaction chamber unit 104 to perform the wafer pick-and-place operation. The above-mentioned vapor deposition equipment is connected to one side of the transfer chamber 310; as shown in the left side of the embodiment in Fig. 7, the transfer chamber can have four sides, the left side of which can be connected to two vapor deposition equipment 100, and the outer wafer transfer ports 121 of the two vapor deposition equipment 100 are located on the same side of the transfer chamber 310; the right side of which can be connected to one vapor deposition equipment 200, and the outer wafer transfer ports 221 of the two reaction chamber groups are located on the same side of the transfer chamber 310. In other embodiments, the vapor deposition equipment 100 or 200 can be freely matched and combined with the transfer chamber 310, for example, two vapor deposition equipment 200 are mounted on two sides of the transfer chamber 310. In some other embodiments, the transfer chamber 310 comprises at least four sides, three of which are mounted with vapor deposition equipment 100, 200, and the other side is used for the transfer of wafers and the outside environment; or, two sides of the transfer chamber 310 are mounted with vapor deposition equipment 100, 200, and one side is connected to another transfer chamber 310. The semiconductor processing system 300 of the present application can be flexibly expanded according to actual production needs and site conditions to achieve the maximum use efficiency. The mechanical arm 311 transfers the wafers between the vapor deposition equipment and the transfer chamber through the outer wafer transfer ports 121, 221. In order to prevent the exchange of gases between the vapor deposition equipment and the transfer chamber during the process, a switchable sealing door is arranged at the outer wafer transfer port.

[0064] In some embodiments, the mechanical arm 311 can have two branches, which respectively transfer the wafers in the corresponding reaction chamber groups through two outer wafer transfer ports. A feasible transfer method comprises, before the process reaction, the mechanical arm 311 places one wafer at the front end of each branch at a time, a total of two wafers, regardless of the vapor deposition equipment 100 or the vapor deposition equipment 200, first places the wafers on the susceptor of the two reaction chamber units 104 farthest from the mechanical arm 311, and then places the wafers on the susceptor of the two reaction chamber units 104 closest to the mechanical arm 311 by placing one wafer at the front end of each branch of the mechanical arm 311 at a time, a total of two wafers; after the process reaction, the wafers placed on the susceptor of the two reaction chamber units 104 farthest from the mechanical arm 311 are taken out first, and then the wafers placed on the susceptor of the two reaction chamber units 104 closest to the mechanical arm 311 are taken out. In other embodiments, the pick-and-place sequence of the wafers in different reaction chamber units 104 can also be flexibly selected according to actual conditions.

[0065] On the other side of the transmission cavity 310, a vacuum locking cavity 320 can also be connected, for temporarily storing the substrate before or after the reaction, and the air pressure of the vacuum locking cavity 320 can be switched between vacuum and atmosphere, so as to realize the exchange between the substrate and the external environment through the vacuum locking cavity 320.

[0066] Although the content of the present application has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present application. After reading the above content, various modifications and substitutions of the present application will be apparent to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.

Claims

1. A vapor deposition apparatus characterized by comprising: The application relates to a chamber body, a reaction cavity group, a pedestal, a gas shower head and a drive assembly. The chamber body comprises a body upper part and a body lower part, one side of the body lower part is provided with an outer transmission sheet port; The reaction cavity group is located in the interior of the chamber body, and the reaction cavity group performs the in-out action of a substrate through the outer transmission sheet port; The reaction cavity group comprises at least two reaction cavity units, two adjacent reaction cavity units are separated by a cavity wall, and the cavity wall of the body lower part between the two adjacent reaction cavity units is provided with an inner transmission sheet port; The pedestal is located in the interior of the reaction cavity unit and can be lifted between the position of the body upper part and the position of the body lower part; The gas shower head is located in the interior of the reaction cavity unit and is opposite to the pedestal.

2. A vapour deposition apparatus as claimed in claim 1, characterised in that, The inner transmission sheet port is provided with a switchable blocking structure for blocking the gas exchange between two adjacent reaction cavity units.

3. A vapour deposition apparatus as claimed in claim 2, wherein, The blocking structure comprises a liftable blocking plate.

4. A vapour deposition apparatus as claimed in claim 3, wherein The blocking structure further comprises a driving motor located above the body upper part; A transmission rod is located in the cavity wall of the body upper part, the transmission rod is fixedly connected with the driving motor and the blocking plate, and is used for driving the blocking plate to descend to close the inner transmission sheet port or to ascend to open the inner transmission sheet port.

5. A vapour deposition apparatus as claimed in claim 2, wherein The blocking structure comprises a gas curtain flowing upwards and downwards of the inner transmission sheet port.

6. The vapor deposition apparatus of claim 1, wherein, The interior of the reaction cavity unit is provided with a plasma confinement ring located above the position of the inner transmission sheet port.

7. A vapour deposition apparatus as claimed in claim 6, wherein The cavity wall of the body lower part of the reaction cavity unit is provided with an annular support for supporting the plasma confinement ring, the annular support is provided with a through port in the region coinciding with the inner transmission sheet port and / or the outer transmission sheet port, so that the transmission of the substrate is not hindered.

8. The vapor deposition apparatus of claim 1, wherein, The bottom wall of the body lower part between two adjacent reaction cavity units is provided with an air exhaust port, the air exhaust port is located below the inner transmission sheet port and is separated from the inner transmission sheet port by a cavity wall, and the air exhaust port communicates two adjacent reaction cavity units.

9. The vapor deposition apparatus of claim 1, wherein, The interior of the chamber body is provided with at least two reaction cavity groups, and the outer transmission sheet ports of the two reaction cavity groups are located on the same side of the chamber body.

10. A vapour deposition apparatus as claimed in claim 9, wherein The bottom wall of the body lower part between two adjacent reaction cavity units between the two reaction cavity groups is provided with an air exhaust port, and the air exhaust port communicates two adjacent reaction cavity units.

11. A vapour deposition apparatus as claimed in claim 9, wherein The air exhaust ports are located on the same circumference.

12. The vapor deposition apparatus of claim 1, wherein, The drive assembly is located below the body lower part, penetrates through the bottom wall of the body lower part and is connected with the pedestal, and is used for controlling the pedestal to ascend to the position of the body upper part in a process and to descend to the position of the body lower part in a transmission process.

13. The vapor deposition apparatus of claim 1, wherein The radio frequency source is electrically connected with the pedestal or the gas shower head, and is used for exciting plasma in a process.

14. The vapor deposition apparatus of claim 1, wherein, The cavity walls of the body upper part and the body lower part are oppositely provided with a sealing ring surrounding the reaction cavity unit.

15. The vapor deposition apparatus of claim 1, wherein, The body upper part is integrally processed with the upper cavity wall of the reaction cavity unit, and the body lower part is integrally processed with the lower cavity wall of the reaction cavity, the outer transmission sheet port and the inner transmission sheet port.

16. The vapor deposition apparatus of claim 1, wherein, The lifting pin penetrates through the upper surface of the pedestal.

17. A semiconductor processing system, comprising: The application relates to a chamber body, a reaction cavity group, a pedestal, a gas shower head and a drive assembly. The transmission cavity is provided with a mechanical arm in the interior, the length of the mechanical arm is greater than the width of the reaction cavity unit. A vapor deposition apparatus as claimed in any one of claims 1-16 connected to one side of the transport cavity; The outer transport port is in communication with the transport cavity, and the outer transport port is provided with a sealable door.

18. The semiconductor processing system of claim 17, wherein, The number of the reaction cavity groups is at least two, and the chamber body is provided with at least two outer transport ports on the side opposite to the transport cavity, corresponding to the at least two reaction cavity groups respectively; the mechanical arm has at least two branches, and the substrate is transported in the corresponding reaction cavity group through the at least two outer transport ports respectively.

19. The semiconductor processing system of claim 17, wherein, The other side of the transport cavity is further connected with a vacuum locking cavity for temporarily storing the substrate.

20. The semiconductor processing system of claim 17, wherein, The transport cavity comprises at least four sides, and at least three sides thereof are connected with the vapor deposition apparatus as claimed in any one of claims 1-16.

21. The semiconductor processing system of claim 17, wherein, The number of the transport cavities is at least two, each of the transport cavities comprises at least four sides, and at least two of the transport cavities are connected through a respective one of the opposite sides; the other sides of each of the transport cavities are connected with the vapor deposition apparatus as claimed in any one of claims 1-16.

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